Semiconductor mask system and use method

Abstract

The invention discloses a semiconductor mask system. The semiconductor mask system comprises a mask body and an intermediate-frequency electro-therapeutic apparatus, wherein the mask body comprises a conductive layer, an electrode and an insulating soft material, and the medium-frequency electro-therapeutic apparatus comprises an electrode connector; the electrode and the conductive layer are arranged on the front surface of the mask body; the insulating soft material is distributed on the back surface of the whole mask body in a honeycomb shape; the medium-frequency electro-therapeutic apparatus outputs medium-frequency current to the electrode through the electrode connector, and the medium-frequency current is diffused and distributed into the whole mask body through the conductive layer. In cooperation with an intermediate-frequency electro-therapeutic apparatus, graphene is introduced into the semiconductor mask to serve as a conductive layer, inert conductive particles harmless to the human body are further added into a treatment medium, the diffusion and distribution effects on current generated by electrodes are achieved, and the current receiving area of the face is effectively increased.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor facial masks, and more specifically, relates to a semiconductor facial mask system and a usage method thereof. Background Art

[0002] A facial mask is a common facial beauty and treatment product, and the absorption of the active ingredients on the facial mask is the key to whether the facial mask can play its role. When this semiconductor facial mask is used in combination with a medium-frequency electrotherapy instrument, it can cause the medium-frequency current generated by the electrodes of the electrotherapy instrument to disperse and spread to the face, strengthening the activity of the capillaries, microvessels and lymphatic vessels on the face, thereby improving the absorption of the active ingredients in the facial mask by the face. The facial mask is used in combination with a medium-frequency electrotherapy instrument; the semiconductor facial mask has a function of diffusing and distributing the medium-frequency current generated by the electrodes of the medium-frequency electrotherapy instrument, effectively increasing the area of the face receiving the medium-frequency current; the medium-frequency current spreading to the face has an obvious improvement effect on the microcirculation and lymphatic return of the face; the combined use of the facial mask and the medium-frequency electrotherapy instrument also has effects such as softening scars and relieving pain.

[0003] However, there are still some potential defects and limitations in using medium-frequency current for convalescence, mainly including: skin sensitivity and discomfort: when the medium-frequency therapeutic instrument is connected to any two electrodes on the facial mask, the skin area in contact with the electrodes may suddenly experience current stimulation, resulting in discomfort or potential skin reactions. For people with sensitive skin, the current stimulation may cause skin discomfort, irritation or even burns; and may even pose some risks of skin damage. In addition, even if the embodiments of the present application adopt a uniform design to distribute the current, however, in actual treatment, due to factors such as the manufacturing process and manufacturing cost of the facial mask, there is still a problem of uneven current distribution, which further leads to problems such as skin discomfort caused by current stimulation. Summary of the Invention

[0004] In order to solve the deficiencies existing in the prior art, the purpose of the present invention is to solve the above-mentioned defects, and further propose a semiconductor facial mask system and a usage method thereof.

[0005] The present invention adopts the following technical solutions.

[0006] The first aspect of the present invention discloses a semiconductor facial mask system, including: a facial mask body and a medium-frequency electrotherapy instrument; wherein, the facial mask body includes: a conductive layer, electrodes and an insulating soft material, and the medium-frequency electrotherapy instrument includes an electrode connector; the electrodes and the conductive layer are arranged on the front surface of the facial mask body; the insulating soft material is distributed in a honeycomb shape on the entire back surface of the facial mask body; the medium-frequency electrotherapy instrument outputs a medium-frequency current to the electrodes through the electrode connector, and diffuses and distributes the medium-frequency current to the entire facial mask body through the conductive layer.

[0007] Furthermore, the number of the electrodes is multiple, and they are distributed at the positions corresponding to the acupoints on the human face.

[0008] Further, the conductive layer is graphene, and the insulating soft material is polyurethane or polyester film.

[0009] Further, the treatment medium of the facial mask further includes inert conductive particles harmless to the human body.

[0010] Further, the insulating soft material is a polyester film, including a first polyester film and a second polyester film; wherein, the first polyester film is the polyester film close to the electrode, and a layer of semiconductor material is embedded between the two polyester films. The first polyester film is hollowed out at the contact with the electrode, so that the semiconductor material contacts the electrode but does not contact the graphene; the medium-frequency electrotherapy device further includes a photoexcitation device for exciting the perovskite material to generate excitons.

[0011] Further, the semiconductor material is a perovskite material of ABX 3 lattice type.

[0012] Further, the perovskite material is a mixture of CH 3 NH 3 Cl and SnCl 2 and is attached to the polyester film as the substrate by a spin coating process.

[0013] Further, the photoexcitation device is an LED lamp.

[0014] The second aspect of the present invention discloses a method for using a semiconductor facial mask system, which is used to execute on the semiconductor facial mask system described in the first aspect. The method includes Step 1 to Step 3; Step 1, apply the facial mask on the human face; Step 2, turn on the medium-frequency electrotherapy device and set the current value and frequency value; Step 3, connect the electrode connector to the electrode and set a duration for treatment.

[0015] Further, before executing Step 1 to Step 3, it further includes: irradiating the facial mask body with an LED lamp so that excitons are evenly dispersed in the graphene through the electrode.

[0016] The beneficial effects of the present invention are that, compared with the prior art, the present invention has the following advantages: (1) The present invention discloses a semiconductor facial mask system. In cooperation with a medium-frequency electrotherapy device, graphene is introduced as a conductive layer in the semiconductor facial mask, and inert conductive particles harmless to the human body are also added to the treatment medium, which has the effect of diffusing and distributing the current generated by the electrode, effectively increasing the area of the face receiving the current.

[0017] (2)When the medium-frequency therapeutic apparatus is connected to any two electrodes on the mask, the skin area in contact with the electrodes may suddenly experience current stimulation, resulting in discomfort or potential skin reactions. In order to more evenly disperse the current instantaneously at the beginning of the treatment, the present invention creatively introduces a semiconductor. Excitons are generated through a photoexcitation device. When the medium-frequency electrotherapy apparatus is turned on, due to the existence of the built-in electric field, the excitons instantaneously become carriers, thereby achieving the purpose of evenly dispersing the current. Description of the Drawings

[0018] Figure 1 is a front view schematic diagram of a semiconductor mask system.

[0019] Figure 2 is a cross-sectional view schematic diagram of a semiconductor mask system.

[0020] In the figure: 1, mask body; 11, conductive layer; 12, electrode; 13, insulating soft material; 14, semiconductor material; 2, medium-frequency therapeutic apparatus; 21, electrode connector; 22, photoexcitation device. Detailed Embodiments

[0021] The present application will be further described below with reference to the accompanying drawings. The following embodiments are only used to more clearly illustrate the technical solutions of the present invention and cannot be used to limit the protection scope of the present application.

[0022] The present invention first discloses a semiconductor mask system, as Figure 1 shown, including: a mask body 1 and a medium-frequency therapeutic apparatus 2. Among them, the mask body includes: a conductive layer 11, an electrode 12 and an insulating soft material 13, and the medium-frequency therapeutic apparatus includes an electrode connector 21.

[0023] The mask body also includes a treatment medium. Among them, the treatment medium is usually composed of water and water-soluble components, and collagen, skin care ingredients (such as: aloe vera, lavender), whitening ingredients (such as: arbutin), anti-acne ingredients (such as: salicylic acid, tea tree oil), soothing ingredients (such as: glycerin), etc. can be added.

[0024] In Figure 1 , the electrodes and the conductive layer are arranged on the front surface of the mask body. Among them, the number of electrodes can be multiple. The electrodes can be positive electrode patches or negative electrode patches. Usually, the two appear in pairs, and the electrodes can be distributed at the positions corresponding to the acupoints on the human face.

[0025] In some embodiments, the positive electrode patch can be a silver-silver chloride patch, and the negative electrode patch can be a pure zinc patch.

[0026] The conductive layer usually selects graphene, and its honeycomb-like distribution is on the front surface of the entire mask body.

[0027] Graphene is a material with extremely high electrical conductivity. Doping graphene into a facial mask can significantly increase the electrical conductivity of the facial mask, enabling the medium-frequency current to be transmitted to the skin more effectively and evenly through the facial mask. This means that the medium-frequency current can be more effectively distributed, thereby improving the effect of beauty treatment. In addition, the incorporation of graphene can also enhance the physical strength and durability of the facial mask, making it more durable and tear-resistant.

[0028] Insulating soft materials usually have the characteristics of being soft and lightweight. As a protective layer, they prevent the medium-frequency current from directly contacting the skin, avoiding the irritation or discomfort caused by the medium-frequency current to sensitive skin. At the same time, this isolation also prevents the heat generated by the medium-frequency current from directly acting on the skin. The insulating soft material can be selected from polyurethane or polyester film. In Figure 1 it, the insulating soft material is distributed in a honeycomb shape on the back of the entire facial mask body, used to evenly distribute the treatment medium to ensure that the entire face can benefit evenly.

[0029] In the embodiments of the present invention, it is agreed that the back of the facial mask body is the contact surface between the facial mask body and the human face.

[0030] In some embodiments, inert conductive particles harmless to the human body can be added to the treatment medium of the facial mask. Different from traditional point stimulation, on the one hand, it weakens the local medium-frequency current, and on the other hand, it increases the action area of the medium-frequency current.

[0031] The medium-frequency electrotherapy instrument outputs a medium-frequency current to the electrode through the electrode connector, and diffuses and distributes the medium-frequency current to the entire facial mask body through the conductive layer. The medium-frequency current generated by the medium-frequency electrotherapy instrument can stimulate blood vessel dilation and improve blood circulation, thereby increasing the oxygen and nutrient supply of tissues. In the field of beauty, the medium-frequency electrotherapy instrument is used to improve skin quality, such as reducing fine lines and wrinkles by promoting the generation of collagen, and improving skin elasticity and firmness. In addition, the medium-frequency current can penetrate deeper into the skin and muscle tissues. Compared with low-frequency current, it can act on deeper tissues, thereby providing a more effective treatment effect.

[0032] Correspondingly, the present invention also discloses a method for using a semiconductor facial mask system, including Step 1 to Step 3.

[0033] Step 1, apply the facial mask on a person's face.

[0034] Step 2, turn on the medium-frequency electrotherapy instrument and set the current value and frequency value.

[0035] Among them, the current value can be 0.15 - 0.2 mA / cm 2 , and the frequency value can be 2 - 4 kHz.

[0036] Step 3, connect the electrode connector to the electrode and set the duration for convalescence.

[0037] Generally, the convalescence time is 15 - 20 minutes.

[0038] Compared with the microcurrent in the low - frequency range, due to its higher frequency, the medium - frequency current can penetrate the skin and muscle tissues more deeply and is usually used for deeper treatment. However, it has many advantages in the field of skin care and beauty, but there are also some potential defects and limitations, mainly including: Skin sensitivity and discomfort: When the medium - frequency therapeutic instrument is connected to any two electrodes on the mask, the skin area in contact with the electrodes may suddenly experience current stimulation, resulting in discomfort or potential skin reactions. For people with sensitive skin, the current stimulation may cause skin discomfort, irritation or even burns; and it may even pose some risks of skin damage. In addition, even though the embodiments of the present application adopt a uniform design to distribute the current, in actual treatment, due to factors such as the manufacturing process and manufacturing cost of the mask, there is still a problem of uneven current distribution, which further leads to problems such as skin discomfort caused by current stimulation.

[0039] In some embodiments, semiconductors or elements such as boron (B), nitrogen (N), phosphorus (P), etc. can be doped into graphene. This doping can introduce new energy levels, change the Fermi level of graphene, cause its resistivity to change, endow it with semiconductor characteristics, and then change the current diffusion curve when the medium - frequency electrotherapy instrument acts on the face through the mask, so as to achieve the purpose of evenly dispersing the current, and further slow down the problem of skin sensitivity and discomfort caused by current stimulation.

[0040] However, as the most core characteristic of semiconductors, doping endows semiconductors with a wide range of functions and applications, but at the same time brings a series of challenges and limitations. Doping not only has extremely high precision requirements for the amount and distribution of dopants itself, but also is very difficult to conduct performance tests. Even when the same batch of materials is tested at different locations or at different times, the results are very different.

[0041] Clinical studies have shown that many customers will instinctively resist mechanical equipment when they first receive mask treatment. In fact, when many skin - sensitive people receive medium - frequency current convalescence, they often do not have substantial sensitivity or discomfort problems, which is more of a psychological hypnosis effect. Once the body gets used to the weak sense of stimulation caused by the current for the first time, similar problems will not occur subsequently.

[0042] Based on this, in some embodiments, as Figure 2 shown, the polyester film is 2 - layer, including the first - layer polyester film and the second - layer polyester film. Among them, the first - layer polyester film is the polyester film close to the electrode, and a layer of semiconductor material 14 can be embedded between the 2 - layer polyester films. The part of the first - layer polyester film in contact with the electrode is hollowed out, so that the semiconductor material is in contact with the electrode but not in contact with graphene.

[0043] The basic idea of this method is to generate excitons by irradiating a semiconductor material with light. After the neutral excitons are uniformly dispersed in the graphene of the entire facial mask, a medium-frequency current is introduced. Due to the existence of the built-in electric field, the excitons dispersed in the graphene will be instantaneously separated into carriers, thereby achieving the purpose of uniformly dispersing the current.

[0044] As one of the semiconductor materials, due to its internal properties such as a relatively high dielectric constant and a direct-bandgap crystal structure, perovskite materials can usually be used as a type of solar cell, which means that it can more easily separate excitons into free carriers. Therefore, the semiconductor material can be selected as ABX 3 lattice type (for example: CH 3 NH 3 Cl and SnCl 2 mixed solution) of perovskite materials.

[0045] The insulating soft material can be selected as a polyester film. More specifically, using the polyester film as a substrate, the above-mentioned mixed solution is uniformly attached to the entire polyester film by a spin-coating process, thereby forming a perovskite film. Correspondingly, the medium-frequency electrotherapy device further includes a light excitation device 22 for exciting the perovskite material to generate excitons.

[0046] In some embodiments, the light excitation device can be selected as an LED lamp.

[0047] Correspondingly, before performing steps 1 to 3 of a method for using a semiconductor facial mask system, it further includes: irradiating the facial mask body with an LED lamp so that excitons are uniformly dispersed in the graphene through the electrodes. Among them, the photon energy of the LED lamp should be slightly higher than or equal to the bandgap energy of the semiconductor material. When the LED lamp irradiates for about 1 minute, the excitons are uniformly dispersed in the graphene through the electrodes. At this time, the medium-frequency electrotherapy device can be set to perform treatment through a medium-frequency current.

[0048] It should be noted that due to the inability to overcome the interference of the water-oxygen environment, the stability of perovskite materials is the main challenge for their large-scale industrialization. However, considering that facial masks are usually disposable products, after the facial masks are processed into finished products, it is only necessary to ensure that nitrogen is filled during the sealing process to completely expel oxygen and perform strict sealing to prevent the facial masks from coming into contact with oxygen.

[0049] The applicant of the present invention has made a detailed description and illustration of the embodiments of the present invention in combination with the accompanying drawings of the specification. However, those skilled in the art should understand that the above embodiments are only the preferred implementation schemes of the present invention, and the detailed description is only to help readers better understand the spirit of the present invention, rather than a limitation on the protection scope of the present invention. On the contrary, any improvement or modification made based on the spirit of the present invention should fall within the protection scope of the present invention.

Claims

1. A semiconductor facial mask system, characterized in that, it includes: a facial mask body and a medium-frequency electrotherapy instrument; wherein, the facial mask body includes: a conductive layer, electrodes and an insulating soft material, and the medium-frequency electrotherapy instrument includes an electrode connector; the electrodes and the conductive layer are arranged on the front of the facial mask body; the insulating soft material is distributed in a honeycomb shape on the back of the entire facial mask body; the medium-frequency electrotherapy instrument outputs medium-frequency current to the electrodes through the electrode connector, and diffuses and distributes the medium-frequency current into the entire facial mask body through the conductive layer.

2. The semiconductor facial mask system according to claim 1, characterized in that, the number of electrodes is multiple, and they are distributed at positions corresponding to the acupoints on the human face.

3. The semiconductor facial mask system according to claim 1, characterized in that, the conductive layer is graphene, and the insulating soft material is polyurethane or polyester film.

4. The semiconductor facial mask system according to claim 1, characterized in that, the treatment medium of the facial mask further includes inert conductive particles harmless to the human body.

5. The semiconductor facial mask system according to claim 1, characterized in that, the insulating soft material is a polyester film, including a first-layer polyester film and a second-layer polyester film; wherein, the first-layer polyester film is the polyester film close to the electrodes, and a layer of semiconductor material is embedded between the two layers of polyester films. The first-layer polyester film is hollowed out at the contact with the electrodes, so that the semiconductor material contacts the electrodes but does not contact the graphene; the medium-frequency electrotherapy instrument further includes a photoexcitation device for exciting the perovskite material to generate excitons.

6. The semiconductor facial mask system according to claim 5, characterized in that, The semiconductor material is ABX 3 perovskite material of lattice type.

7. The semiconductor facial mask system according to claim 6, characterized in that, The perovskite material is CH 3 NH 3 Cl and SnCl 2 mixed solution, which is attached to a polyester film used as a substrate through a spin-coating process.

8. The semiconductor facial mask system according to claim 5, characterized in that, the photoexcitation device is an LED lamp.

9. A method for using a semiconductor facial mask system, which is executed on the semiconductor facial mask system according to any one of claims 1 to 8, and the method includes step 1 to step 3; Step 1, apply the facial mask on a person's face; Step 2, turn on the medium-frequency electrotherapy instrument and set the current value and frequency value; Step 3, connect the electrode connector to the electrodes and set a duration for treatment.

10. The method for using a semiconductor facial mask system according to claim 9, characterized in that, before executing step 1 to step 3, it further includes: irradiating the facial mask body with an LED lamp so that excitons are evenly dispersed in graphene through the electrodes.

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