Inorganic material processing method, light-emitting device and display device

Abstract

The invention discloses an inorganic material processing method, a light-emitting device and a display device, and relates to the technical field of display. The preparation method of the inorganic material comprises the following steps: providing a to-be-treated inorganic material, a solvent, a first precipitant and a second precipitant, wherein the to-be-treated inorganic material comprises inorganic nanoparticles and a ligand connected with the inorganic nanoparticles; mixing a to-be-treated inorganic material with a solvent to obtain a mixed solution; mixing a first precipitant with the mixed solution, separating, and taking supernate; and mixing a second precipitant with the supernatant, separating, and taking the precipitate to obtain the treated inorganic material. The processing method of the inorganic material provided by the invention is simple, the particle size of the processed inorganic material is uniform, the carrier migration rate of the carrier function layer is improved, and the luminous efficiency of the luminescent device is further improved.

Description

Technical Field

[0001] This application relates to the field of display technologies, and particularly to a method for treating inorganic materials, a light-emitting device, and a display device. Background Art

[0002] Currently, the widely used light-emitting devices are organic light-emitting diodes (OLEDs) and quantum dot light-emitting diodes (QLEDs). Due to their excellent display performance such as self-luminescence, simple structure, ultra-thinness, fast response speed, wide viewing angle, low power consumption, and flexible display, OLEDs have become the mainstream technology in the field of display technologies. QLEDs have the advantages of saturated emission light color and adjustable wavelength, and high photoluminescence and electroluminescence quantum yields. In recent years, they have become strong competitors to OLEDs.

[0003] In the prior art, inorganic nanoparticles are often used as the material of the carrier functional layer to improve the carrier transport efficiency. However, the particle size of the inorganic nanoparticles is non-uniform, resulting in a low carrier migration rate of the carrier functional layer and affecting the light-emitting performance of the device.

[0004] Currently, the particle size of inorganic materials is non-uniform and needs to be further improved. Summary of the Invention

[0005] In view of this, this application provides a method for treating inorganic materials, a light-emitting device, and a display device.

[0006] The embodiments of this application are implemented as follows. A method for treating inorganic materials includes:

[0007] Providing an inorganic material to be treated, a solvent, a first precipitating agent, and a second precipitating agent, where the inorganic material to be treated includes inorganic nanoparticles and ligands connected to the inorganic nanoparticles;

[0008] Mixing the inorganic material to be treated with the solvent to obtain a mixed solution;

[0009] Mixing the first precipitating agent with the mixed solution, separating, and taking the supernatant;

[0010] Mixing the second precipitating agent with the supernatant, separating, and taking the precipitate to obtain the treated inorganic material.

[0011] Correspondingly, the embodiments of this application also provide an inorganic material obtained by the above treatment method.

[0012] Correspondingly, the embodiments of this application also provide a light-emitting device including a first electrode, a first carrier functional layer, a light-emitting layer, and a second electrode stacked in sequence, where the material of the first carrier functional layer includes the inorganic material obtained by the above treatment method.

[0013] Accordingly, an embodiment of the present application further provides a display device, and the display device includes the above-mentioned light-emitting device.

[0014] The processing method of the inorganic material provided by the present application is simple, and the particle size of the processed inorganic material is uniform, which is beneficial to improving the carrier migration rate of the carrier functional layer, and further improving the light-emitting efficiency of the light-emitting device. Description of the Drawings

[0015] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present application. For those skilled in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0016] Figure 1 is a flowchart of the processing method of the inorganic material provided by the embodiment of the present application;

[0017] Figure 2 is a schematic structural diagram of the light-emitting device provided by the embodiment of the present application;

[0018] Figure 3 is a schematic structural diagram of another light-emitting device provided by the embodiment of the present application.

[0019] Reference Signs:

[0020] First electrode 10; first carrier functional layer 20; light-emitting layer 30; second electrode 40; second carrier functional layer 50. Detailed Embodiments

[0021] The following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts belong to the scope of protection of the present application. In addition, it should be understood that the specific embodiments described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0022] In the present application, unless otherwise stated, the orientation terms such as "upper" and "lower" usually refer to the upper and lower in the actual use or working state of the device, specifically the drawing direction in the drawings; and "inner" and "outer" refer to the outline of the device. In addition, in the description of the present application, the term "including" means "including but not limited to". The terms first, second, third, etc. are only used as labels and do not impose numerical requirements or establish an order.

[0023] In this application, "and / or" describes the association relationship of associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist simultaneously, and B exists alone. Here, A and B can be singular or plural.

[0024] In this application, "at least one" means one or more, and "a plurality" means two or more. "One or several", "at least one (item) below" or similar expressions refer to any combination of these items, including any combination of single items or plural items. For example, "at least one (item) among a, b, or c", or "at least one (item) among a, b, and c" can both represent: a, b, c, a - b (i.e., a and b), a - c, b - c, or a - b - c, where a, b, and c can be single or multiple respectively.

[0025] The various embodiments of this application can exist in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be construed as a rigid limitation on the scope of this application; therefore, it should be considered that the description of the range has specifically disclosed all possible sub - ranges and the single values within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub - ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and the single numbers within that range, such as 1, 2, 3, 4, 5, and 6, and this applies regardless of the range. Additionally, whenever a numerical range is indicated herein, it means including any cited number (fraction or integer) within the indicated range.

[0026] ZnO is a direct - band - gap N - type inorganic material with a wide bandgap of 3.37 eV and a low work function of 3.7 eV, and has advantages such as good stability, high transparency, safety, and non - toxicity, making ZnO a suitable electron - transport - layer material. However, currently, ZnO prepared by solution method or sol - gel method has many surface defects, large and non - uniform sizes, resulting in non - uniform spin - coating film formation, poor charge - transport performance, unstable interfaces, etc., which affect the performance of light - emitting devices.

[0027] The technical solution of this application is as follows:

[0028] In a first aspect, please refer to Figure 1 , an embodiment of this application provides a method for treating an inorganic material, including:

[0029] S11. Provide an inorganic material to be treated, a solvent, a first precipitating agent, and a second precipitating agent, where the inorganic material to be treated includes inorganic nanoparticles and ligands connected to the inorganic nanoparticles;

[0030] S12. Mix the inorganic material to be processed with the solvent to obtain a mixed solution;

[0031] S13. Mix the first precipitating agent with the mixed solution, separate, and take the supernatant;

[0032] S14. Mix the second precipitating agent with the supernatant, separate, and take the precipitate to obtain the processed inorganic material.

[0033] It should be noted that the inorganic material to be processed in this application is an inorganic material prepared by conventional prior art, which contains inorganic nanoparticles with firmly connected ligands, inorganic nanoparticles with loosely connected ligands, and inorganic nanoparticles with a large particle size span.

[0034] In the method for processing an inorganic material provided by this application, the inorganic material to be processed is treated with a solvent, which can remove the loosely bound ligands on the inorganic nanoparticles. The inorganic nanoparticles with the ligands falling off agglomerate to form large-particle-size inorganic nanoparticle aggregates. After treatment with the first precipitating agent, the inorganic nanoparticle aggregates in the precipitate can be removed. The supernatant contains inorganic nanoparticles with firmly connected ligands. Then, the second precipitating agent is used to precipitate stable and uniformly sized inorganic nanoparticles to obtain the processed inorganic material. When this processed inorganic material is used to prepare a thin film, it can effectively improve the film-forming quality of the thin film and avoid the agglomeration of inorganic nanoparticles during the preparation process of the thin film and during subsequent storage and use, which may affect the performance of the light-emitting device.

[0035] In S11:

[0036] It should be noted that ligands are introduced during the preparation process of the inorganic material to be processed. Some ligands are firmly connected to the inorganic nanoparticles, while some ligands are loosely connected to the inorganic nanoparticles. Inorganic nanoparticles with loosely connected ligands are prone to ligand detachment during storage or use, resulting in the agglomeration of inorganic nanoparticles.

[0037] In some embodiments, the volume ratio of the mixed solution to the first precipitating agent is 1:(0.1 - 1), for example, it can be 1:0.2, 1:0.3, 1:0.4, 1:0.5, 1:0.6, 1:0.7, 1:0.8, 1:0.9, etc. Within the range of the volume ratio, after treatment with the first precipitating agent, the inorganic nanoparticle aggregates in the precipitate can be removed.

[0038] In some embodiments, the volume ratio of the supernatant to the second precipitating agent is 1:(1.5 - 4.5), for example, it can be 1:2, 1:2.5, 1:3, 1:3.5, 1:4, etc. Within the range of the volume ratio, after treatment with the second precipitating agent, stable and uniformly sized inorganic nanoparticles can be effectively precipitated.

[0039] In some embodiments, the inorganic nanoparticles include P-type inorganic nanoparticles or N-type inorganic nanoparticles.

[0040] Further, the P-type inorganic nanoparticles include one or more of second-doped metal oxide particles, second-undoped metal oxide particles, metal sulfides, metal selenides, and metal nitrides. The metal oxides in the second-doped metal oxide particles and the metal oxides in the second-undoped metal oxide particles independently include MoO 3 、WO 3 、NiO、CrO 3 、CuO、V 2 O 5 One or more of these. The doping elements in the second-doped metal oxide particles include one or more of Mo, W, Ni, Cr, Cu, and V. The metal sulfides include CuS, MoS 3 、WS 3 One or more of these. The metal selenides include MoSe 3 、WSe 3 、CuSe 3 One or more of these. The metal nitrides include P-type gallium nitride.

[0041] The N-type inorganic nanoparticles include one or more of first-doped metal oxide particles, first-undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The material of the first-undoped metal oxide particles includes ZnO, TiO 2 、SnO 2 、ZrO 2 、Ta 2 O 5 One or more of these. The metal oxides in the first-doped metal oxide particles include ZnO, TiO 2 、SnO 2 、ZrO 2 、Ta 2 O 5 、Al 2 O 3One or more of them, the doping elements in the first doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, the group IIB-VIA semiconductor materials include one or more of ZnS, ZnSe, CdS, CdO, CdSe, the group IIIA-VA semiconductor materials include one or more of InP, GaP, AlP, InAs, GaAs, AlAs, and the group IB-IIIA-VIA semiconductor materials include one or more of CuInS, CuGaS, CuInSe, CuGaSe, AgInS, AgGaS, AgInSe, AgGaSe.

[0042] In some embodiments, the average particle size of the inorganic material to be treated is 5 nm to 100 nm, for example, it can be 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, etc.

[0043] In some embodiments, the ligand includes one or more of hydroxy compounds, carboxy compounds, and organic amine compounds. It can be understood that the ligand is generated during the process of synthesizing inorganic nanoparticles. In addition to hydroxy compounds, carboxy compounds, and organic amine compounds, the surface of the inorganic nanoparticles also includes other types of ligands.

[0044] Exemplarily, the hydroxy compounds include one or more of methanol, ethanol, propanol, butanol, octanol, pentanol, hexanol, heptanol, decanol, ethylene glycol, glycerol, propylene glycol, pentaerythritol, allyl alcohol, and vinyl alcohol.

[0045] The carboxy compounds include one or more of acetic acid, maleic acid, benzoic acid, phenylacetic acid, phthalic acid, terephthalic acid, valeric acid, caproic acid, capric acid, oxalic acid, citric acid, tartaric acid, stearic acid, palmitic acid, oleic acid, and oxalic acid.

[0046] The organic amine compounds include one or more of o-phenylenediamine, m-phenylenediamine, ethylamine, ethylenediamine, methylethylamine, diethylamine, methylethylisopropylamine, N,N-dimethylaniline, propylamine, aniline, diisopropylamine, triethanolamine, and tetrabutylammonium bromide.

[0047] In some embodiments, the preparation method of the inorganic material to be treated includes:

[0048] S111. Provide a metal salt solution and an alkali solution. The metal salt solution includes a metal salt and a first solvent, and the alkali solution includes an alkali and a second solvent;

[0049] S112. Mix the metal salt solution and the alkali solution to obtain the inorganic material to be treated.

[0050] In S111:

[0051] In some embodiments, the metal salt includes one or more of zinc salt, barium salt, nickel salt, titanium salt, tin salt, tantalum salt, zirconium salt, cadmium salt, molybdenum salt, tungsten salt, copper salt, indium salt, gallium salt, barium salt, aluminum salt, magnesium salt, lithium salt, manganese salt, yttrium salt, lanthanum salt, cerium salt, gadolinium salt.

[0052] In some embodiments, the metal salt includes one or more of acetate, sulfate, halide, nitrate. Exemplarily, the zinc salt includes one or more of zinc acetate, zinc sulfate, zinc halide, zinc nitrate.

[0053] In some embodiments, the base includes one or more of potassium hydroxide, lithium hydroxide, sodium hydroxide, ammonium hydroxide, ethylenediamine, ethanolamine, diethanolamine, triethanolamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide.

[0054] In some embodiments, the molar ratio of the salt ions in the metal salt to the hydroxide ions in the base is 1:(1.5 - 3), for example, it can be 1:1.8, 1:2, 1:2.2, 1:2.5, 1:2.8, etc.

[0055] In some embodiments, in the metal salt solution, the molar concentration of the metal salt solution is 0.1 mol / L to 1 mol / L, for example, it can be 0.2 mol / L, 0.3 mol / L, 0.4 mol / L, 0.5 mol / L, 0.6 mol / L, 0.7 mol / L, 0.8 mol / L, 0.9 mol / L, etc. Within the range of the molar concentration, it is beneficial for the metal salt to be fully dissolved.

[0056] In some embodiments, in the alkali solution, the molar concentration of the base is 0.2 mol / L to 1.5 mol / L, for example, it can be 0.3 mol / L, 0.4 mol / L, 0.5 mol / L, 0.6 mol / L, 0.7 mol / L, 0.8 mol / L, 0.9 mol / L, 1 mol / L, 1.1 mol / L, 1.2 mol / L, 1.3 mol / L, etc. Within the range of the molar concentration, it is beneficial for the base to be fully dissolved.

[0057] In some embodiments, the first solvent and the second solvent each independently include one or more of chlorobenzene, diethylene glycol monobutyl ether, trimethoxybutanol, triethylene glycol monobutyl ether, diethylene glycol dimethyl ether, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, acetophenone, tetrahydrofuran, N,N - dimethylformamide, ethyl acetate, pyrrole, butyric acid, cresol.

[0058] In S112:

[0059] In some embodiments, the method for mixing the metal salt solution and the alkali solution includes: dropping the alkali solution into the metal salt solution. It can be understood that by adopting the dropping method for mixing, it is beneficial to control the pH within an appropriate range.

[0060] The mixing of the metal salt solution and the alkali solution can be carried out at room temperature.

[0061] In some embodiments, after mixing the metal salt solution and the alkali solution, first stirring is further included.

[0062] Furthermore, the time for the first stirring is 1 h to 4 h, and for example, it can be 1.5 h, 2 h, 2.5 h, 3 h, 3.5 h, etc. Thus, it is beneficial for the metal salt and the alkali solution to be fully mixed to prepare the inorganic material to be treated.

[0063] In some embodiments, after the metal salt solution and the alkali solution are mixed, a third precipitating agent is further added to precipitate the inorganic material to be treated.

[0064] In some embodiments, the third precipitating agent includes one or more of acetone, ethyl acetate, hexane, heptane, and octane.

[0065] In S12:

[0066] In some embodiments, the solvent includes one or more of alcohol solvents and ether solvents.

[0067] In some embodiments, the alcohol solvents include one or more of chain alcohols and cyclic alcohols. The chain alcohols include one or more of methanol, ethanol, butanol, and pentanol. The cyclic alcohols include 4-methylcyclohexanol, etc.

[0068] In some embodiments, the ether solvents include one or more of ethylene glycol monomethyl ether, ethylene glycol monobutyl ether, butanediol monomethyl ether, propylene glycol monomethyl ether, and 3-methoxybutanol.

[0069] It should be noted that in the present application, a compound containing both a hydroxyl group and an ether bond belongs to the ether solvents.

[0070] In some embodiments, the solvent includes alcohol solvents and ether solvents, and the volume ratio of the alcohol solvents to the ether solvents is 1:(0.2 - 2), and for example, it can be 1:0.5, 1:0.8, 1:1, 1:1.2, 1:1.5, 1:1.8, etc.

[0071] In some embodiments, in the mixed solution, the mass concentration of the inorganic material to be treated is 1.5 mg / mL to 6 mg / mL, and can be, for example, 2 mg / mL, 2.5 mg / mL, 3 mg / mL, 3.5 mg / mL, 4 mg / mL, 4.5 mg / mL, 5 mg / mL, 5.5 mg / mL, etc. Within the range of the mass concentration, it is beneficial to the dissolution and dispersion of the inorganic material to be treated.

[0072] In some embodiments, after the solvent and the inorganic material to be treated are mixed, ultrasonic dispersion and / or stirring are further included.

[0073] Further, the frequency of the ultrasonic dispersion is 40 kHz to 100 kHz, and can be, for example, 50 kHz, 60 kHz, 70 kHz, 80 kHz, 90 kHz, etc.; the temperature is 25°C to 40°C, and can be, for example, 28°C, 30°C, 32°C, 35°C, 38°C, etc.; the time is 10 min to 120 min, and can be, for example, 20 min, 40 min, 60 min, 80 min, etc.

[0074] The temperature of the stirring is 25°C to 40°C, and can be, for example, 28°C, 30°C, 32°C, 35°C, 38°C, etc.; the time is 0.25 h to 4 h, and can be, for example, 0.5 h, 1 h, 1.5 h, 2 h, 2.5 h, 3 h, 3.5 h, etc.

[0075] It can be understood that through the above ultrasonic dispersion and / or stirring, the role of the solvent can be fully exerted, and the shedding of unstable ligands can be promoted.

[0076] In some embodiments, the mixed solution includes inorganic nanoparticles with ligands not shed, aggregates of inorganic nanoparticles with ligands shed, and shed ligands. It can be understood that the inorganic nanoparticles with ligands not shed are part of the inorganic material to be treated. Due to the strong connection of their ligands, they are still stably connected to the inorganic nanoparticles after being treated with the solvent.

[0077] In some embodiments, the average particle size of the aggregates of inorganic nanoparticles with ligands shed is 20 nm to 100 nm. For example, it can be 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, etc.

[0078] It can be understood that after being treated with the solvent, the ligands with weak connections shed, and the inorganic nanoparticles after ligand shedding are prone to agglomerate to form aggregates of inorganic nanoparticles with large particle sizes, so as to remove the aggregates of inorganic nanoparticles with large particle sizes subsequently.

[0079] In S13:

[0080] In some embodiments, the first precipitant includes one or more of acetone, ethyl acetate, hexane, heptane, and octane.

[0081] In some embodiments, the volume ratio of the mixed solution to the first precipitant is 1:(0.1 - 1), for example, it can be 1:0.2, 1:0.3, 1:0.4, 1:0.5, 1:0.6, 1:0.7, 1:0.8, 1:0.9, etc. Within the range of the volume ratio, it is beneficial to precipitate large - particle - sized inorganic nanoparticle aggregates.

[0082] After adding the first precipitant, ultrasonic treatment or stirring can be carried out to promote the full combination and precipitation of the first precipitant with the inorganic nanoparticle aggregates.

[0083] It can be understood that in the supernatant, there are inorganic nanoparticles with ligands not detached and detached ligands.

[0084] In S14:

[0085] In some embodiments, the second precipitant includes one or more of acetone, ethyl acetate, hexane, heptane, and octane.

[0086] In some embodiments, the volume ratio of the supernatant to the second precipitant is 1:(1.5 - 4.5), for example, it can be 1:2, 1:2.5, 1:3, 1:3.5, 1:4, etc. Within the range of the volume ratio, it is beneficial to precipitate inorganic materials with the required particle size and containing firmly bound ligands.

[0087] In this application, through two - stage separation, large - particle - sized inorganic nanoparticle aggregates in the precipitate are removed for the first time, and the supernatant is separated again to obtain the processed inorganic materials in the precipitate. The processed inorganic materials have uniform particle sizes and contain firmly bound linking ligands, and will not agglomerate again during storage and the process of preparing thin films.

[0088] It can be understood that the inorganic materials include inorganic nanoparticles with ligands not detached. The detached ligands remain in the solvent during the second precipitation.

[0089] In some embodiments, the average particle size of the inorganic materials is 4nm - 12nm, for example, it can be 4.1nm, 4.2nm, 4.3nm, 4.4nm, 4.5nm, 4.6nm, 4.7nm, 4.8nm, 4.9nm, etc.

[0090] In a second aspect, the embodiments of this application also provide an inorganic material obtained by the above - mentioned treatment method.

[0091] In a third aspect, please refer to Figure 2, embodiments of the present application further provide a light-emitting device, which includes a first electrode 10, a first carrier functional layer 20, a light-emitting layer 30, and a second electrode 40 that are sequentially stacked. The material of the first carrier functional layer 20 includes the inorganic material obtained by the above-mentioned treatment method.

[0092] Please refer to Figure 3 , in some embodiments, the light-emitting device further includes a second carrier functional layer 50, and the second carrier functional layer 50 is disposed between the light-emitting layer 30 and the second electrode 40.

[0093] In some embodiments, the first carrier functional layer 20 is a hole functional layer, and the second carrier functional layer 50 is an electron functional layer. Correspondingly, the first electrode 10 is an anode, and the second electrode 40 is a cathode.

[0094] In other embodiments, the first carrier functional layer 20 is an electron functional layer, and the second carrier functional layer 50 is a hole functional layer. Correspondingly, the second electrode 40 is an anode, and the first electrode 10 is a cathode.

[0095] The hole functional layer includes one or more of a hole injection layer and a hole transport layer.

[0096] The electron functional layer includes one or more of an electron injection layer and an electron transport layer.

[0097] In some embodiments, when the first carrier functional layer 20 is a hole functional layer, the inorganic nanoparticles include P-type inorganic nanoparticles.

[0098] In other embodiments, when the first carrier functional layer 20 is an electron functional layer, the inorganic nanoparticles include N-type inorganic nanoparticles.

[0099] In some embodiments, when the second charge carrier functional layer 50 is a hole functional layer, the material of the second charge carrier functional layer 50 includes 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green luminescent material, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylene vinylene), poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexoxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], copper phthalocyanine, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraarylbenzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS doped with s-MoO 3 derivatives, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-bis(naphthalen-1-yl)-N,N'-diphenylbenzidine, spiro-NPB, nano-polycrystalline diamond, microcrystalline cellulose and tetracyanoquinodimethane, doped graphene, undoped graphene, second doped metal oxide particles, second undoped metal oxide particles, metal sulfides, metal selenides and metal nitrides, one or several of them, the metal oxides in the second doped metal oxide particles and the metal oxides in the second undoped metal oxide particles independently include MoO 3 、WO 3 、NiO、CrO 3 、CuO、V 2 O 5One or more of the above, the doping elements in the second doped metal oxide particles include one or more of Mo, W, Ni, Cr, Cu, V, and the metal sulfide includes one or more of CuS, MoS 3 、WS 3 One or more of the above, the metal selenide includes MoSe 3 、WSe 3 One or more of the above, and the metal nitride includes p-type gallium nitride.

[0100] In some other embodiments, when the second carrier functional layer 50 is an electron functional layer, the material of the second carrier functional layer 50 includes one or more of first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA group inorganic materials, IIIA-VA group inorganic materials, and IB-IIIA-VIA group inorganic materials. The material of the first undoped metal oxide particles includes one or more of ZnO, TiO 2 、SnO 2 、ZrO 2 、Ta 2 O 5 One or more of the above, the metal oxides in the first doped metal oxide particles include ZnO, TiO 2 、SnO 2 、ZrO 2 、Ta 2 O 5 、Al 2 O 3 One or more of the above, the doping elements in the first doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga. The IIB-VIA group inorganic materials include one or more of ZnS, ZnSe, CdS. The IIIA-VA group inorganic materials include one or more of InP, GaP. The IB-IIIA-VIA group inorganic materials include one or more of CuInS, CuGaS.

[0101] It can be understood that when the material of the second carrier functional layer 50 is p-type inorganic nanoparticles or n-type inorganic nanoparticles, the material of the second carrier functional layer 50 can be obtained by treating the above inorganic materials.

[0102] In some embodiments, the light-emitting device includes a light-emitting diode.

[0103] In some embodiments, the first electrode 10 and the second electrode 40 each independently include one or more of a metal, a carbon material, and a metal oxide; the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg; the carbon material includes one or more of graphite, carbon nanotubes, graphene, and carbon fibers; the metal oxide includes a metal oxide electrode or a composite electrode in which a doped or undoped transparent metal oxide sandwiches a metal, and the material of the metal oxide electrode includes one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO 3 and one or more of AMO, and the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO 2 / Ag / TiO 2 and TiO 2 / Al / TiO 2 One or more of them. Among them, " / " represents a stacked structure. For example, AZO / Ag / AZO represents a composite electrode including a sequentially stacked AZO layer, Ag layer, and AZO layer.

[0104] In some embodiments, the material of the light-emitting layer 30 includes one or more of an organic light-emitting material and a quantum dot light-emitting material.

[0105] The organic light-emitting material can be selected from, but not limited to, CBP:Ir(mppy) 3 (4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridine iridium(III)]), TCTX:Ir(mmpy)(4,4',4”-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridine iridium]), diaryl anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent material, TTPX fluorescent material, TBRb fluorescent material, DBP fluorescent material, delayed fluorescence material, TTA material, TADF (thermally activated delayed) material, a polymer containing a B-N covalent bond, an HLCT (hybrid local charge transfer excited state) material, an Exciplex (excited complex) light-emitting material, and one or more of them.

[0106] The quantum dot light-emitting material can be selected from, but not limited to, one or more of a single-structure quantum dot, a core-shell structure quantum dot, and a perovskite-type inorganic material.

[0107] The materials of the single-structure quantum dots, the core materials of the core-shell structure quantum dots, and the shell materials of the core-shell structure quantum dots can be respectively selected from, but not limited to, one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. The shell layer of the core-shell structure quantum dots is one or more layers. The II-VI group compounds can be selected from, but not limited to, one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds can be selected from, but not limited to, one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compounds can be selected from, but not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The I-III-VI group compounds can be selected from, but not limited to, one or more of CuInS 2 , CuInSe 2 , and AgInS 2 .

[0108] As an example, the quantum dots of the core-shell structure can be selected from but not limited to one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, and InP / ZnSe / ZnS. In the expressions such as CdSe / ZnS above, " / " means that the material after " / " (as the shell layer) coats the material before " / " (as the core layer).

[0109] The perovskite-type inorganic material can be selected from but not limited to doped or undoped inorganic perovskite-type semiconductors, or organic-inorganic hybrid perovskite-type semiconductors. The general structural formula of the inorganic perovskite-type semiconductor is AMX 3 , where A is Cs + ion, M is a divalent metal cation selected from Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ , Eu 2+ one or more of them, and X is a halogen anion selected from Cl - , Br - , I - one or more of them. The general structural formula of the organic-inorganic hybrid perovskite-type semiconductor is BMX 3 , where B is an organic amine cation selected from CH 3 (CH 2 ) n-2 NH 3 + or [NH 3 (CH 2 ) n NH 3 2+ , where n≥2, M is a divalent metal cation selected from Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ ​, Yb 2+ , Eu 2+ One or more of them, X is a halogen anion, selected from Cl - , Br - , I - One or more of them.

[0110] In a fourth aspect, an embodiment of the present application further provides a display device, and the display device includes the above-mentioned light-emitting device.

[0111] The display device can be any electronic product with a display function. The electronic product includes but is not limited to a smart phone, a tablet computer, a laptop computer, a digital camera, a digital video camera, a smart wearable device, a smart weighing electronic scale, a vehicle-mounted display, a television, or an e-book reader. Among them, the smart wearable device can be, for example, a smart bracelet, a smart watch, a virtual reality (VR) helmet, etc.

[0112] The present application will be specifically described below through specific embodiments. The following embodiments are only partial embodiments of the present application and do not limit the present application.

[0113] Embodiment 1

[0114] This embodiment provides a light-emitting device, and the preparation method is as follows:

[0115] Provide ITO glass, clean it with a cleaner to initially remove the stains on the surface, and then ultrasonically clean it in deionized water, isopropanol, acetone, and deionized water for 20 minutes respectively to remove the impurities on the surface. Finally, dry it with high-purity nitrogen to form an ITO anode;

[0116] Spin-coat PEDOT:PSS on the ITO anode at a rotation speed of 5000 rpm for 30 seconds, and then heat it at 150 °C for 15 minutes to form a hole injection layer;

[0117] Dissolve TFB in chlorobenzene at a concentration of 8 mg / mL, spin-coat it on the hole injection layer at a rotation speed of 3000 rpm for 30 seconds, and then perform UV irradiation treatment for 10 minutes and heat it at 200 °C for 10 minutes to form a hole transport layer;

[0118] Prepare a quantum dot solution of CdZnSe, spin-coat the quantum dot solution on the hole transport layer at a rotation speed of 2000 rpm for 30 seconds to form a light-emitting layer with a thickness of 20 nm;

[0119] Zinc acetate was added to DMF to form a zinc salt solution with a concentration of 0.5 mol / L. Sodium hydroxide was dispersed in an ethanol solution to form a NaOH solution with a concentration of 0.6 mol / L. At room temperature, the NaOH solution was dropped into the zinc salt solution, and stirring was continued for 2 h to obtain a clear and transparent solution. Acetone was used as a precipitant to precipitate ZnO nanoparticles, which were collected after centrifugation. 60 mg of ZnO nanoparticles were dissolved in a mixed solvent of 20 mL of ethanol and ethylene glycol monomethyl ether with a volume ratio of ethanol to ethylene glycol monomethyl ether of 2:1, and stirred at 30 °C for 1 h to obtain a ZnO dispersion. The first precipitant acetone was added to the ZnO dispersion, and the volume ratio of the ZnO dispersion to the first precipitant acetone was 1:0.8. The supernatant was retained after centrifugation. Then, the second precipitant acetone was added to the supernatant, and the volume ratio of the supernatant to the second precipitant acetone was 1:3.5. The inorganic material ZnO precipitate was collected by centrifugation and dispersed in an appropriate amount of ethanol to obtain a ZnO solution with uniform size, where the particle size of ZnO was 5 nm to 8 nm;

[0120] The ZnO solution was spin-coated on the light-emitting layer at a rotation speed of 3000 rpm for 30 s, and then heated at 80 °C for 30 min to form an electron transport layer with a thickness of 40 nm;

[0121] On the electron transport layer, Ag was thermally evaporated with a vacuum degree not higher than 3×10 -4 Pa at a speed of 1 Å / s to form a cathode with a thickness of 80 nm;

[0122] Encapsulation was carried out in an environment where both the oxygen content and the water content were lower than 0.1 ppm to obtain a light-emitting device.

[0123] Examples 2 - 3

[0124] Examples 2 - 3 were basically the same as Example 1, except that in Examples 2 - 3, the volume ratios of the ZnO dispersion to the first precipitant acetone were 1:1 and 1:0.1, respectively.

[0125] Examples 4 - 5

[0126] Examples 4 - 5 were basically the same as Example 1, except that in Examples 4 - 5, the volume ratios of the supernatant to the second precipitant acetone were 1:4.5 and 1:1.5, respectively.

[0127] Examples 6 - 7

[0128] Examples 6 - 7 were basically the same as Example 1, except that in Examples 6 - 7, the first precipitant was replaced with ethyl acetate and the second precipitant was replaced with heptane, respectively.

[0129] Examples 8 - 9

[0130] Examples 8 to 9 are basically the same as Example 1, except that in Examples 8 to 9, the solvents in the ZnO dispersion are replaced with a mixed solvent of 3-methoxybutanol and 4-methylcyclohexanol, and a mixed solvent of pentanol and propylene glycol monomethyl ether, respectively.

[0131] Examples 10 to 11

[0132] Examples 10 to 11 are basically the same as Example 1, except that in Examples 10 to 11, the amounts of the mixed solvent of ethanol and ethylene glycol monomethyl ether are 40 mL and 10 mL, respectively.

[0133] Examples 12 to 15

[0134] Examples 12 to 15 are basically the same as Example 1, except that

[0135] after the ZnO nanoparticles and the mixed solvent of ethanol and ethylene glycol monomethyl ether are mixed in Examples 12 to 13, the stirring temperatures are 40 °C and 25 °C, respectively;

[0136] after the ZnO nanoparticles and the mixed solvent of ethanol and ethylene glycol monomethyl ether are mixed in Examples 14 to 15, the stirring times are 4 h and 0.25 h, respectively.

[0137] Example 16

[0138] This example is basically the same as Example 1, except that after the ZnO nanoparticles and the mixed solvent of ethanol and ethylene glycol monomethyl ether are mixed in this example, ultrasonic dispersion is carried out at a frequency of 60 kHz, a temperature of 30 °C, and a time of 60 min to obtain a ZnO dispersion.

[0139] Examples 17 to 22

[0140] Examples 17 to 22 are basically the same as Example 16, except that

[0141] the ultrasonic dispersion frequencies in Examples 17 to 18 are 100 kHz and 40 kHz, respectively;

[0142] the ultrasonic dispersion temperatures in Examples 19 to 20 are 40 °C and 25 °C, respectively;

[0143] the ultrasonic dispersion times in Examples 21 to 22 are 120 min and 10 min, respectively.

[0144] Example 23

[0145] This example is basically the same as Example 1, except that in this example, zinc acetate is replaced with titanium nitrate, and the generated inorganic material zinc oxide becomes inorganic material titanium oxide.

[0146] Example 24

[0147] This embodiment is basically the same as Embodiment 1, except that the preparation method of the electron transport layer in this embodiment includes: dissolving ZnO nanoparticles in ethanol and spin-coating them on the light-emitting layer to form an electron transport layer;

[0148] The preparation method of the hole transport layer refers to the preparation method of the electron transport layer in Embodiment 1, where zinc acetate is replaced by nickel nitrate, and the generated inorganic material zinc oxide becomes inorganic material nickel oxide; spin-coating the nickel oxide solution on the hole injection layer to form a hole transport layer.

[0149] Embodiment 25

[0150] This embodiment is basically the same as Embodiment 1, except that the preparation method of the hole transport layer in this embodiment refers to the preparation method of the electron transport layer in Embodiment 1, where zinc acetate is replaced by nickel nitrate, and the generated inorganic material zinc oxide becomes inorganic material nickel oxide; spin-coating the nickel oxide solution on the hole injection layer to form a hole transport layer.

[0151] Comparative Example 1

[0152] This comparative example is basically the same as Embodiment 1, except that the preparation method of the electron transport layer in this comparative example includes: dissolving ZnO nanoparticles in ethanol and spin-coating them on the light-emitting layer to form an electron transport layer.

[0153] Comparative Examples 2 - 3

[0154] Comparative Examples 2 - 3 are basically the same as Embodiment 1, except that the volume ratios of the ZnO dispersion liquid to the first precipitating agent acetone in Comparative Examples 2 - 3 are 1:2 and 1:0.05 respectively.

[0155] Comparative Examples 4 - 5

[0156] Comparative Examples 4 - 5 are basically the same as Embodiment 1, except that the volume ratios of the supernatant to the second precipitating agent acetone in Comparative Examples 4 - 5 are 1:5 and 1:1 respectively.

[0157] Comparative Example 6

[0158] This comparative example is basically the same as Embodiment 11, except that the preparation method of the electron transport layer in this comparative example includes: dissolving ZnO nanoparticles in ethanol and spin-coating them on the light-emitting layer to form an electron transport layer; the preparation method of the hole transport layer includes dissolving nickel oxide nanoparticles in ethanol and spin-coating them on the hole layer to form a hole transport layer.

[0159] The average particle size, luminous efficiency EQE, and service life T95@1k nit of the inorganic materials prepared in Embodiments 1 - 25 and Comparative Examples 1 - 6 were tested respectively, and the results are shown in Table 1.

[0160] Among them, the average particle size is measured by a particle size analyzer. In Example 24 and Comparative Example 6, the average particle size of the inorganic material of the hole transport layer is measured, and in other Examples and Comparative Examples, the average particle size of the inorganic material of the electron transport layer is measured;

[0161] The test method for the luminous efficiency EQE is as follows: EQE is the ratio of the number of electron-hole pairs injected into the quantum dots to the number of emitted photons, with the unit of %, and it is an important parameter to measure the quality of electroluminescent devices. It can be obtained by measuring with an EQE optical test instrument. The specific calculation formula is as follows:

[0162]

[0163] Among them, ηe is the optical output coupling efficiency, ηr is the ratio of the number of recombined carriers to the number of injected carriers, χ is the ratio of the number of excitons generating photons to the total number of excitons, K R is the radiation process rate, K NR is the non-radiation process rate. Test conditions: Conducted at room temperature, with the air humidity of 30 - 60%.

[0164] The test method for the service life T95@1k nit is as follows: When the device is driven under a constant current or voltage, the time required for the brightness to decrease to a certain proportion of the maximum brightness. The time when the brightness drops to 95% of the maximum brightness is defined as T95, and this life is the measured life. To shorten the test cycle, the device life test is usually carried out by accelerating the device aging at high brightness, and the life at high brightness is obtained by fitting with the extended exponential decay brightness attenuation fitting formula. For example, the life at 1k nit is denoted as T95@1k nit. The specific calculation formula is as follows:

[0165]

[0166] Among them, T95 L is the life at low brightness, T95 H is the measured life at high brightness, L H is the device accelerated to the maximum brightness, L L is 1000 nit, A is the acceleration factor, and in this experiment, the A value is obtained as 1.7 by measuring the lives of several groups of blue QLED devices at the rated brightness.

[0167] Table 1

[0168]

[0169]

[0170] As can be seen from Table 1:

[0171] It can be seen from Examples 1 to 5 and Comparative Examples 1 to 5 that using the inorganic material processed by this solution as the material of the carrier functional layer can effectively reduce the aggregation of inorganic nanoparticles, improve the injection and transport efficiency of carriers, thereby improving the luminous efficiency of the light-emitting device and extending the service life of the light-emitting device; the dosages of the first and second precipitants in the stepwise precipitation have a certain influence on the average particle size of the inorganic material and the performance of the light-emitting device. If the dosage of the first precipitant is too large, inorganic nanoparticles containing stable ligands will also be precipitated, and the average particle size of the inorganic material will decrease, but the yield will be greatly reduced; if the dosage of the first precipitant is too small, large-particle-size inorganic nanoparticles cannot be effectively removed; if the dosage of the second precipitant is too large, materials other than inorganic nanoparticles may be precipitated, and the precipitant will be wasted. If the dosage of the second precipitant is too small, inorganic nanoparticles with uniform particle size cannot be effectively precipitated;

[0172] It can be seen from Example 1, Examples 6 to 7 and Comparative Example 1 that replacing the precipitant has no significant influence on the average particle size of the inorganic material, the luminous efficiency and the service life of the light-emitting device. Compared with Comparative Example 1, it can effectively reduce the average particle size of the inorganic material, inhibit its aggregation, and significantly improve the luminous efficiency and service life of the light-emitting device;

[0173] It can be seen from Example 1, Examples 8 to 11 and Comparative Example 1 that replacing the type of solvent and within the solvent dosage range provided in this application can effectively promote the shedding of loosely bound ligands, thereby promoting the removal of the aggregated inorganic nanoparticles after ligand shedding, leaving inorganic materials with small and uniform average particle sizes; the performance of the light-emitting devices in Examples 1, 8 to 11 is significantly higher than that of the light-emitting device in Comparative Example 1;

[0174] It can be seen from Example 1, Examples 12 to 15 and Comparative Example 1 that stirring after mixing the solvent and ZnO nanoparticles is beneficial to the shedding of loosely bound ligands. Within the range provided in this application, the temperature and time of stirring have no significant influence on the average particle size of the inorganic material, the luminous efficiency and the service life of the light-emitting device. Compared with Comparative Example 1, the average particle size of the inorganic material is significantly reduced, and the luminous efficiency and service life of the light-emitting device are improved;

[0175] It can be seen from Example 1, Examples 16 to 22 and Comparative Example 1 that ultrasonic dispersion after mixing the solvent and ZnO nanoparticles is more beneficial to the shedding of loosely bound ligands than the stirring method. This may be because the ultrasonic frequency can not only promote the shedding of loosely bound ligands by promoting the action of the solvent, but also directly act on the ligands to promote the shedding of loosely bound ligands, thereby improving the luminous efficiency of the light-emitting device and extending the service life of the light-emitting device;

[0176] It can be seen from Example 1, Examples 23 to 25 and Comparative Example 1, Comparative Example 6 that the material replacing the inorganic nanoparticles has little effect on the performance of the light-emitting device. However, the average particle size of zinc oxide is smaller than that of nickel oxide, which is determined by the atomic structure of the inorganic nanoparticles themselves. The average particle size of the nickel oxide inorganic material prepared by this solution is significantly reduced compared with the conventional nickel oxide in Comparative Example 6, thereby improving the luminous efficiency and service life of the light-emitting device.

[0177] The above has introduced in detail the treatment method of the inorganic material, the light-emitting device, and the display device provided by the embodiments of the present application. Specific examples are used in this article to elaborate on the principle and implementation manner of the present application. The description of the above embodiments is only used to help understand the method and its core idea of the present application. At the same time, for those skilled in the art, according to the idea of the present application, there will be changes in the specific implementation manner and application scope. In summary, the content of this specification should not be construed as a limitation to the present application.

Claims

1. A method for treating an inorganic material, characterized in that, comprising: providing an inorganic material to be treated, a solvent, a first precipitating agent and a second precipitating agent, wherein the inorganic material to be treated comprises inorganic nanoparticles and ligands connected to the inorganic nanoparticles; mixing the inorganic material to be treated with the solvent to obtain a mixed solution; mixing the first precipitating agent with the mixed solution, separating, and taking the supernatant; mixing the second precipitating agent with the supernatant, separating, and taking the precipitate to obtain the treated inorganic material.

2. The treatment method according to claim 1, characterized in that, the volume ratio of the mixed solution to the first precipitating agent is 1:(0.1 - 1); and / or the volume ratio of the supernatant to the second precipitating agent is 1:(1.5 - 4.5); and / or the inorganic nanoparticles comprise P-type inorganic nanoparticles or N-type inorganic nanoparticles; and / or the solvent comprises one or more of alcohol solvents and ether solvents; and / or the ligands comprise one or more of hydroxy compounds, carboxy compounds, and organic amine compounds; and / or the first precipitating agent comprises one or more of acetone, ethyl acetate, hexane, heptane, and octane; and / or the second precipitating agent comprises one or more of acetone, ethyl acetate, hexane, heptane, and octane; and / or the first precipitating agent and the second precipitating agent are the same or different.

3. The treatment method according to claim 2, characterized in that, The N-type inorganic nanoparticles include one or more of first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The materials of the first undoped metal oxide particles include one or more of ZnO, TiO 2 , SnO 2 , ZrO 2 , Ta 2 O 5 . The metal oxides in the first doped metal oxide particles include one or more of ZnO, TiO 2 , SnO 2 , ZrO 2 , Ta 2 O 5 , Al 2 O 3 . The doping elements in the first doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga. The IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, CdS, CdO, CdSe. The IIIA-VA group semiconductor materials include one or more of InP, GaP, AlP, InAs, GaAs, AlAs. The IB-IIIA-VIA group semiconductor materials include one or more of CuInS, CuGaS, CuInSe, CuGaSe, AgInS, AgGaS, AgInSe, AgGaSe; and / or The P-type inorganic nanoparticles include one or more of second doped metal oxide particles, second undoped metal oxide particles, metal sulfides, metal selenides, and metal nitrides. The metal oxides in the second doped metal oxide particles and the metal oxides in the second undoped metal oxide particles independently include one or more of MoO 3 , WO 3 , NiO, CrO 3 , CuO, V 2 O 5 . The doping elements in the second doped metal oxide particles include one or more of Mo, W, Ni, Cr, Cu, and V. The metal sulfides include one or more of CuS, MoS 3 , WS 3 . The metal selenides include one or more of MoSe 3 , WSe 3 , CuSe 3 . The metal nitrides include p-type gallium nitride; and / or the alcohol solvents comprise one or more of methanol, ethanol, butanol, pentanol, and 4-methylcyclohexanol; and / or the ether solvents comprise one or more of ethylene glycol monomethyl ether, ethylene glycol monobutyl ether, butanediol monomethyl ether, propylene glycol monomethyl ether, and 3-methoxybutanol; and / or the hydroxy compounds comprise one or more of methanol, ethanol, propanol, butanol, octanol, pentanol, hexanol, heptanol, decanol, ethylene glycol, glycerol, propylene glycol, pentaerythritol, allyl alcohol, and vinyl alcohol; and / or the carboxy compounds comprise one or more of acetic acid, maleic acid, benzoic acid, phenylacetic acid, phthalic acid, terephthalic acid, valeric acid, hexanoic acid, decanoic acid, oxalic acid, citric acid, tartaric acid, stearic acid, palmitic acid, oleic acid, and oxalic acid; and / or the organic amine compounds comprise one or more of o-phenylenediamine, m-phenylenediamine, ethylamine, ethylenediamine, methylethylamine, diethylamine, methylethylisopropylamine, N,N-dimethylaniline, propylamine, aniline, diisopropylamine, triethanolamine, and tetrabutylammonium bromide.

4. The treatment method according to claim 2, characterized in that, the average particle size of the inorganic material to be treated is 5 nm - 100 nm; and / or in the mixed solution, the mass concentration of the inorganic material to be treated is 1.5 mg / mL - 6 mg / mL; and / or the solvent comprises alcohol solvents and ether solvents, and the volume ratio of the alcohol solvents to the ether solvents is 1:(0.2 - 2).

5. The treatment method according to claim 1, characterized in that, after the solvent and the inorganic material to be treated are mixed, it further comprises ultrasonic dispersion and / or stirring.

6. The treatment method according to claim 5, characterized in that, The frequency of the ultrasonic dispersion is 40 kHz to 100 kHz; the temperature is 25°C to 40°C; the time is 10 min to 120 min; and / or The temperature of the stirring is 25°C to 40°C; the time is 0.25 h to 4 h.

7. The treatment method according to claim 1, characterized in that, the mixed solution includes inorganic nanoparticles with ligands not detached, aggregates of inorganic nanoparticles with ligands detached, and detached ligands; and / or the supernatant includes inorganic nanoparticles with ligands not detached and detached ligands; and / or the treated inorganic material includes inorganic nanoparticles with ligands not detached.

8. The treatment method according to claim 7, characterized in that, the average particle size of the aggregates of inorganic nanoparticles with ligands detached is 20 nm to 100 nm; and / or the average particle size of the inorganic material is 4 nm to 12 nm.

9. An inorganic material, characterized in that, it is obtained by the treatment method according to any one of claims 1 to 8.

10. A light-emitting device, characterized in that, it includes a first electrode, a first charge carrier functional layer, a light-emitting layer, and a second electrode that are stacked in sequence, and the material of the first charge carrier functional layer includes an inorganic material obtained by the treatment method according to any one of claims 1 to 8.

11. The light-emitting device according to claim 10, characterized in that, the light-emitting device further includes a second charge carrier functional layer, and the second charge carrier functional layer is disposed between the light-emitting layer and the second electrode; the first charge carrier functional layer is a hole functional layer, and the second charge carrier functional layer is an electron functional layer; or, the first charge carrier functional layer is an electron functional layer, and the second charge carrier functional layer is a hole functional layer.

12. The light-emitting device according to claim 11, characterized in that, when the first charge carrier functional layer is an electron functional layer, the inorganic nanoparticles include N-type inorganic nanoparticles; when the first charge carrier functional layer is a hole functional layer, the inorganic nanoparticles include P-type inorganic nanoparticles; When the second charge carrier functional layer is an electron functional layer, the material of the second charge carrier functional layer includes one or more of first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA group inorganic materials, IIIA-VA group inorganic materials, and IB-IIIA-VIA group inorganic materials. The material of the first undoped metal oxide particles includes one or more of ZnO, TiO 2 , SnO 2 , ZrO 2 , Ta 2 O 5 . The metal oxides in the first doped metal oxide particles include one or more of ZnO, TiO 2 , SnO 2 , ZrO 2 , Ta 2 O 5 , Al 2 O 3 . The doping elements in the first doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga. The IIB-VIA group inorganic materials include one or more of ZnS, ZnSe, CdS, CdO, CdSe. The IIIA-VA group inorganic materials include one or more of InP, GaP, AlP, InAs, GaAs, AlAs. The IB-IIIA-VIA group inorganic materials include one or more of CuInS, CuGaS, CuInSe, CuGaSe, AgInS, AgGaS, AgInSe, AgGaSe; When the second carrier functional layer is a hole functional layer, the materials of the second carrier functional layer include 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green luminescent material, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylene vinylene), poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], copper phthalocyanine, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraarylbenzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS doped with s-MoO 3 derivatives, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-bis(naphthalen-1-yl)-N,N'-diphenylbenzidine, spiro-NPB, nano-polycrystalline diamond, microcrystalline cellulose and tetracyanoquinodimethane, doped graphene, undoped graphene, second doped metal oxide particles, second undoped metal oxide particles, metal sulfides, metal selenides and metal nitrides, one or more of which, the metal oxides in the second doped metal oxide particles and the metal oxides in the second undoped metal oxide particles independently include MoO 3 、WO 3 、NiO、CrO 3 、CuO、V 2 O 5 One or more of the following, the doping elements in the second doped metal oxide particles include one or more of Mo, W, Ni, Cr, Cu, V, and the metal sulfide includes CuS, MoS 3 , WS 3 One or more of the following, the metal selenide includes MoSe 3 , WSe 3 , CuSe 3 One or more of the following, and the metal nitride includes p-type gallium nitride.

13. The light-emitting device according to claim 10, characterized in that, The first electrode and the second electrode each independently include one or more of a metal, a carbon material, and a metal oxide; the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg; the carbon material includes one or more of graphite, carbon nanotubes, graphene, and carbon fiber; the metal oxide includes a metal oxide electrode or a composite electrode in which a doped or undoped transparent metal oxide sandwiches a metal, and the material of the metal oxide electrode includes one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO 3 and one or more of AMO, and the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO 2 / Ag / TiO 2 and TiO 2 / Al / TiO 2 ; and / or The material of the light-emitting layer includes one or more of organic light-emitting materials and quantum dot light-emitting materials; the organic light-emitting materials include one or more of 4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridineiridium(III)], 4,4',4”-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridineiridium], diarylanthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent material, TTPX fluorescent material, TBRb fluorescent material, DBP fluorescent material, delayed fluorescence material, TTA material, TADF material, polymers containing B-N covalent bonds, HLCT material, and Exciplex light-emitting material; the quantum dot light-emitting materials include one or more of single-structure quantum dots, core-shell structure quantum dots, and perovskite semiconductor materials. The materials of the single-structure quantum dots, the core materials of the core-shell structure quantum dots, and the shell materials of the core-shell structure quantum dots are each independently selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds; the shell layer of the core-shell structure quantum dots is one or more layers. The II-VI group compounds include one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; the IV-VI group compounds include one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe;The III-V compounds include one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb; the I-III-VI compounds include one or more of CuInS; 2 , CuInSe 2 and AgInS 2 ; the perovskite semiconductor material includes doped or undoped inorganic perovskite semiconductors, organic-inorganic hybrid perovskite semiconductors; the structural general formula of the inorganic perovskite semiconductor is AMX 3 , where A is Cs + ion, M is a divalent metal cation selected from Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ , Eu 2+ and one or more of them, and X is a halogen anion selected from Cl - , Br - , I - ; the structural general formula of the organic-inorganic hybrid perovskite semiconductor is BMX 3 , where B is an organic amine cation selected from CH 3 (CH 2 ) n-2 NH 3 + or [NH 3 (CH 2 ) n NH 3 2+ , where n≥2, M is a divalent metal cation selected from Pb 2+ , Sn 2+ , Cu 2+ ​, Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ , Eu 2+ One or more of the following, X is a halogen anion, selected from Cl - , Br - , I - One or more of the following.

14. A display device, characterized in that, it includes the light-emitting device according to any one of claims 10 to 13.

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