Substrate processing method, processing module, and semiconductor manufacturing apparatus including the same

Abstract

Disclosed is a substrate processing method capable of shortening the latency between processing processes. The substrate processing method uses plasma, and includes: performing a processing process on a first substrate in a state where the first substrate is located on a support unit in a chamber in which a processing space is defined and a temperature of the first substrate is maintained at a first temperature; forming a plasma in the processing space when the processing process performed on the first substrate is completed to raise the temperature of the first substrate to a second temperature higher than the first temperature; transferring the first substrate to the outside of the chamber when the temperature of the first substrate reaches the second temperature, and placing a second substrate on the support unit; and reducing the temperature of the second substrate to the first temperature, and performing a processing process on the second substrate.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing method, a processing module, and a semiconductor manufacturing apparatus including the processing module for processing a substrate using plasma. Background Art

[0002] The semiconductor manufacturing process is a process of manufacturing semiconductor devices on a substrate (e.g., a wafer), and includes, for example, exposure, deposition, etching, ion implantation, and cleaning. To perform each manufacturing process, semiconductor manufacturing apparatuses for performing each process are provided in a clean room of a semiconductor manufacturing factory, and each process is performed on a substrate loaded in the semiconductor manufacturing apparatus.

[0003] Processes using plasma, such as etching and deposition, are widely used in the semiconductor manufacturing process. The plasma processing process is performed in such a manner that a substrate is placed in a lower portion of a chamber defining a plasma processing space, a processing gas for plasma processing is supplied, and electric power is applied through electrodes located in upper and lower portions of the chamber.

[0004] In the plasma processing process, a process of performing plasma processing in an ultra-low temperature environment (below 0 °C) is known. When the substrate is completed with processing in the ultra-low temperature environment, the substrate is discharged to the outside of the chamber, and then the next substrate is introduced into the chamber. However, when the substrate is discharged to the outside and a new substrate is introduced into the chamber in the ultra-low temperature state, particles may be adsorbed onto the substrate. Therefore, when the substrate is completed with processing in the ultra-low temperature state, the substrate waits for about 20 minutes until the temperature of the substrate returns to room temperature. During this process, a refrigerant for cooling the substrate needs to be replaced. After the previous substrate is discharged to the outside of the chamber, when the substrate to be subsequently processed is introduced into the chamber, the substrate is cooled from room temperature to the ultra-low temperature and then processed. During the process of cooling the substrate, the substrate waits for about 20 minutes and the refrigerant for cooling the substrate is replaced.

[0005] That is, the waiting time between the processing processes is about 40 minutes. However, compared with the normal processing time of about 20 minutes, this waiting time is too long. Summary of the Invention

[0006] The present disclosure provides a substrate processing method, a processing module, and a semiconductor manufacturing apparatus including the processing module, which can shorten the waiting time between the processing processes.

[0007] A method for processing a substrate using plasma according to the present disclosure includes: performing a processing procedure on a first substrate while the first substrate is located on a support unit in a chamber and the temperature of the first substrate is maintained at a first temperature, wherein a processing space is defined in the chamber; when the processing procedure performed on the first substrate is completed, forming plasma in the processing space to raise the temperature of the first substrate to a second temperature higher than the first temperature; transferring the first substrate out of the chamber when the temperature of the first substrate reaches the second temperature, and placing a second substrate on the support unit; and lowering the temperature of the second substrate to the first temperature and performing a processing procedure on the second substrate.

[0008] In an embodiment of the present disclosure, the first temperature may be -70°C.

[0009] In an embodiment of the present disclosure, the second temperature may be 25°C.

[0010] In an embodiment of the present disclosure, the processing procedure performed on the first substrate and the second substrate may be a dry etching process using plasma, which is performed by supplying a first radio frequency (RF) power while a first processing gas is supplied to the processing space.

[0011] In an embodiment of the present disclosure, the temperature of the first substrate may be raised to the second temperature by supplying a second RF power while a second processing gas is supplied to the processing space.

[0012] In an embodiment of the present disclosure, the first processing gas may be an etchant for etching the first substrate and the second substrate, and the second processing gas may be argon (Ar).

[0013] In an embodiment of the present disclosure, the second RF power may be a power lower than the first RF power.

[0014] A processing module for performing a processing procedure on a substrate according to the present disclosure includes: a chamber in which a processing space is defined; a support unit located in a lower portion of the processing space; a gas supply unit configured to supply a processing gas into the chamber; and an RF power supply configured to supply RF power for generating plasma. The processing module performs the above-described substrate processing method.

[0015] A semiconductor manufacturing apparatus according to the present disclosure includes: a loader module that accommodates a carrier configured to receive a substrate, the loader module being configured to unload a substrate from the carrier or load a substrate into the carrier; a processing module configured to perform a processing process on the substrate; a transfer module configured to transfer the substrate between the loader module and the processing module; and a controller configured to control operations of the processing module and the transfer module. The processing module includes: a chamber in which a processing space for processing the substrate is defined; a support unit located in a lower portion of the processing space; a gas supply unit configured to supply a processing gas into the chamber; and an RF power supply configured to supply RF power for generating plasma.

[0016] The controller is configured to: perform a processing process on a first substrate while the first substrate is located on the support unit and the temperature of the first substrate is maintained at a first temperature; when the processing process performed on the first substrate is completed, form plasma in the processing space to raise the temperature of the first substrate to a second temperature higher than the first temperature; transfer the first substrate out of the chamber when the temperature of the first substrate reaches the second temperature, and place a second substrate on the support unit; and lower the temperature of the second substrate to the first temperature and perform a processing process on the second substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The drawings incorporated in this specification illustrate exemplary embodiments and are used to further illustrate the technical idea of the present disclosure in conjunction with the following detailed description of the exemplary embodiments, and the present disclosure should not be construed as being limited to the content shown in such drawings. In the drawings:

[0018] Figure 1 illustrates a layout of a semiconductor manufacturing apparatus according to the present disclosure;

[0019] Figure 2 illustrates a structure of a processing module according to the present disclosure;

[0020] Figure 3 illustrates a structure of a support unit in a processing module according to the present disclosure;

[0021] Figure 4 is a flowchart showing a substrate processing method according to the present disclosure; and

[0022] Figures 5A to 5D is a view for explaining a substrate processing process according to the present disclosure. DETAILED DESCRIPTION

[0023] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings so that those skilled in the art can easily implement these embodiments. However, the present disclosure can be implemented in many different forms and should not be construed as being limited to the embodiments set forth herein.

[0024] Parts unrelated to the description of the present disclosure will be omitted to clearly describe the present disclosure, and throughout the specification, the same or similar components will be indicated by the same reference numerals.

[0025] In addition, components having the same configuration in several embodiments will be assigned the same reference numerals and described only in the representative embodiments, and only the components different from those in the representative embodiments will be described in other embodiments.

[0026] Throughout the specification, when a component is said to be "connected", "coupled" or "joined" to another component, the component and the other component may be "directly connected", "directly coupled" or "directly joined" to each other, or may be "indirectly connected", "indirectly coupled" or "indirectly joined" to each other, with one or more intermediate elements inserted therebetween. In addition, throughout the specification, when a component is said to "include", "comprise" or "have" another component, the component should not be construed as excluding other components as long as there is no special conflicting description, and the component may include at least one other component.

[0027] Unless otherwise defined, all terms (including technical or scientific terms) used herein have the same meaning as commonly understood by those skilled in the art. Terms such as those defined in a common dictionary should be construed as having the same meaning as the terms in the context of the relevant art, and should not be construed as having an ideal or overly formal meaning unless clearly defined in this specification.

[0028] Figure 1 The layout of a semiconductor manufacturing apparatus 1 according to the present disclosure is shown. The semiconductor manufacturing apparatus 1 to which the present disclosure is applicable is an apparatus that performs a processing process on a substrate using plasma. For example, the semiconductor manufacturing apparatus 1 may be an apparatus that performs dry etching using plasma.

[0029] The semiconductor manufacturing apparatus 1 according to an embodiment of the present disclosure includes: a loader module 10 that accommodates a carrier F configured to receive a substrate W and unloads or loads the substrate into or from the carrier F; a processing module 20 that performs a processing process on the substrate W; a transfer module 30 that transfers the substrate W between the loader module 10 and the processing module 20; and a controller 40 that controls the operations of the processing module 20 and the transfer module 30.

[0030] The loader module 10 includes: a loading port 12 on which a carrier F configured to receive a substrate is disposed; and a transfer unit 14 configured to unload a substrate from the carrier F disposed on the loading port 12 or load a fully processed substrate into the carrier F. The loading ports 12 may be provided in plurality, and the plurality of loading ports 12 may be provided on the outer side of the semiconductor manufacturing apparatus 1 in a predetermined direction (e.g., the Y-axis direction). After the carrier F conveyed by an overhead hoist transporter (OHT) is disposed on each of the loading ports 12, the door of the carrier F may be opened. The transfer unit 14 may be disposed adjacent to the loading port 12. The transfer unit 14 may include a transfer guide member 142 provided in the arrangement direction (Y-axis direction) of the loading ports 12 and a transfer robot 144 configured to transfer a substrate while moving along the transfer guide member 142. The transfer robot 144 may receive a substrate from the carrier F and then may transfer the received substrate to the load lock chamber 15 such that the substrate is temporarily stored in the load lock chamber 15, or may receive the substrate temporarily stored in the load lock chamber 15 and then may transfer the received substrate to the interior of the carrier F.

[0031] The processing module 20 is equipment for performing a processing process on a substrate and may include one or more processing chambers. The plurality of processing chambers may be provided in a predetermined direction (e.g., the X-axis direction). The processing chambers may perform the same processing or may perform different processing. For example, some of the processing chambers may perform an etching process on the substrate, and the remaining processing chambers may perform a cleaning process on the substrate that has undergone the etching process.

[0032] The transfer module 30 may be disposed adjacent to the processing module 20. The transfer module 30 may receive a substrate from the load lock chamber 15 and then may transfer the received substrate to the processing module 20, or may transfer the substrate fully processed in the processing module 20 to the load lock chamber 15. The transfer module 30 may include a guide member 33 provided in the arrangement direction (X-axis direction) of the processing chambers and a substrate transfer robot 34 configured to transfer a substrate while moving along the guide member 33.

[0033] The controller 40 may control the overall operation of the semiconductor manufacturing apparatus 1, particularly the operations of the processing module 20 and the transfer module 30. The controller may include a processor and a memory. The processor may execute commands for controlling the operation of the semiconductor manufacturing apparatus 1 and may perform data processing and calculations. The processor may be a central processing unit (CPU) or an application processor (AP). The processor may acquire and store data through communication with the memory and may control the memory.

[0034] A memory is provided to store data. The memory can store programs (e.g., operating systems and applications) for the operation of the controller and data for executing the programs. The memory can be a random access memory (RAM), a read-only memory (ROM), a hard disk drive (HDD), or a solid-state drive (SSD). The memory can be connected to the processor via a data bus to transmit and receive data.

[0035] The controller can include a communication module capable of communicating with external entities and an input / output interface connected to input devices (e.g., keyboards, mice, and touch panels) and output devices (e.g., displays and speakers) to interact with users.

[0036] The processor can execute required processes, such as etching, according to various recipes stored in the memory. The recipes include device control information of process conditions, including process time, process pressure, high-frequency power, voltage, various gas flow rates, temperature inside the chamber (e.g., electrode temperature, chamber sidewall temperature, and electrostatic chuck temperature), and temperature of the cooler. The memory stores data regarding the recipes.

[0037] Figure 2 The structure of the processing module 20 according to the present disclosure is shown. Figure 2 The shown processing module 20 corresponds to Figure 1 one of the multiple processing modules 20 of the shown semiconductor manufacturing apparatus 1. In the semiconductor manufacturing apparatus 1, the multiple processing modules 20 can have the same structure.

[0038] Referring to Figure 2 , the processing module 20 includes a chamber 100, a support unit 200, a showerhead unit 300, a gas supply unit 400, a plasma source, a liner unit (not shown), and a baffle unit 500.

[0039] A processing space 102 is defined in the chamber 100, and a substrate processing process is performed in the processing space. The chamber 100 is provided in a sealed shape. The chamber 100 can be made of a conductive material. For example, the chamber 100 can be made of a material including metal. The chamber 100 can be made of aluminum. The chamber 100 can be grounded. An exhaust hole 104 is formed in the bottom surface of the chamber 100. The exhaust hole 104 is connected to an exhaust pipeline 151. The exhaust pipeline 151 is connected to a pump 153. Reaction by-products generated during the process and gases remaining in the space of the chamber 100 can be discharged to the outside through the exhaust pipeline 151. The internal pressure of the chamber 100 is reduced to a predetermined level through an exhaust process. Alternatively, a separate pressure-reducing member can be provided to reduce the internal pressure of the processing space 102 to a predetermined level.

[0040] A heater (not shown) may be provided on the wall of the chamber 100. The heater heats the wall of the chamber 100. The heater is electrically connected to a heating power supply (not shown). The heater generates heat by resisting the current applied thereto from the heating power supply. The heat generated from the heater is transferred to the internal space. The temperature in the processing space is maintained at a predetermined level by the heat generated from the heater. The heater may be provided as a coil-shaped heating wire. A plurality of heaters may be provided on the wall of the chamber 100.

[0041] Figure 3 The structure of the support unit 200 in the processing module 20 according to the present disclosure is shown. The support unit 200 includes a dielectric plate 220, a metal plate 230, an edge ring assembly 240, a radio frequency (RF) plate 270, an insulating cover 280, a bottom plate 290, a lower cover 295, and a fluid connection block 600. The support unit 200 may be disposed in the chamber 100 to be spaced upward from the bottom surface of the chamber 100.

[0042] The support unit 200 is disposed in the chamber 100. The support unit 200 supports the substrate W in the processing space. The support unit 200 may be provided as an electrostatic chuck (ESC) that uses electrostatic attraction to hold the substrate W. Alternatively, the support unit 200 may support the substrate W in various ways such as mechanical clamping.

[0043] The dielectric plate 220 is located at the top of the support unit 200. The dielectric plate 220 is provided as a disk-shaped dielectric material. The substrate W is placed on the upper surface of the dielectric plate 220. The upper surface of the dielectric plate 220 has a radius smaller than that of the substrate W. Therefore, the outer peripheral region of the substrate W is located outside the dielectric plate 220. A first supply channel 221 is formed in the dielectric plate 220. The first supply channel 221 is formed from the upper surface of the dielectric plate 220 to the lower surface of the dielectric plate 220. A plurality of first supply channels 221 may be formed to be spaced apart from each other and may be used as channels for supplying a heat transfer medium through to the lower surface of the substrate W.

[0044] The electrostatic electrode 223 and the heater 225 are embedded in the dielectric plate 220. The electrostatic electrode 223 is located above the heater 225. The electrostatic electrode 223 is electrically connected to a direct current (DC) power supply 223a. A switch 223b is installed between the electrostatic electrode 223 and the DC power supply 223a. By turning on / off the switch 223b, the electrostatic electrode 223 can be electrically connected to the DC power supply 223a. When the switch 223b is turned on, direct current is applied to the electrostatic electrode 223. An electrostatic force is applied between the electrostatic electrode 223 and the substrate W by the current applied to the electrostatic electrode 223, and due to the electrostatic force, the substrate W is attracted to the dielectric plate 220 and held by the dielectric plate 220.

[0045] The heater 225 is electrically connected to the heater power supply 225a. The heater 225 generates heat by resisting the current applied to it from the heater power supply 225a. The generated heat is transferred to the substrate W through the dielectric plate 220. The temperature of the substrate W is maintained at a predetermined level by the heat generated by the heater 225. The heater 225 includes a spiral coil.

[0046] The metal plate 230 is located below the dielectric plate 220. The lower surface of the dielectric plate 220 and the upper surface of the metal plate 230 can be adhered to each other by means of an adhesive 236. The metal plate 230 can be made of aluminum. The upper surface of the metal plate 230 can be stepped such that its central region is located at a higher position than its outer peripheral region. The central region of the upper surface of the metal plate 230 has an area corresponding to the lower surface of the dielectric plate 220 and is adhered to the lower surface of the dielectric plate 220. A first circulation flow path 231, a second circulation flow path (refrigerant flow path) 232, and a second supply flow path 233 are formed in the metal plate 230.

[0047] The metal plate 230 can be connected to a high-frequency power supply via a high-frequency transmission line. Electric power can be applied from the high-frequency power supply to the metal plate 230 so that the plasma generated in the processing space can be smoothly supplied to the substrate. That is, the metal plate 230 can be used as an electrode. In addition, although Figure 2 the processing module 20 shown in is implemented as a capacitively coupled plasma (CCP) type, the present disclosure is not limited thereto. The processing module 20 according to an embodiment of the present disclosure can be implemented as an inductively coupled plasma (ICP) type. In the case where the processing module 20 is implemented as an ICP type, the high-frequency transmission line can be connected to a lower electrode for generating plasma to apply electric power from the high-frequency power supply to the lower electrode.

[0048] The first circulation flow path 231 is provided as a channel through which a heat transfer medium circulates. The first circulation flow path 231 can be formed in a spiral shape in the metal plate 230. Alternatively, a plurality of concentric annular first circulation flow paths 231 having different radii can also be provided. The plurality of first circulation flow paths 231 can communicate with each other. The first circulation flow paths 231 are formed at the same height.

[0049] The second circulation flow path 232 is provided as a channel through which a cooling fluid circulates. The second circulation flow path 232 can be formed in a spiral shape in the metal plate 230. Alternatively, a plurality of concentric annular second circulation flow paths 232 having different radii can also be provided. The plurality of second circulation flow paths 232 can communicate with each other. The second circulation flow path 232 can have a larger cross-sectional area than the first circulation flow path 231. The second circulation flow paths 232 are formed at the same height. The second circulation flow path 232 can be located below the first circulation flow path 231.

[0050] A plurality of second supply flow paths 233 extend upward from the first circulation flow path 231 to the upper surface of the metal plate 230. The number of the second supply flow paths 233 is the same as the number of the first supply flow paths 221. The second supply flow paths 233 connect the first circulation flow path 231 to the first supply flow paths 221.

[0051] The first circulation flow path 231 is connected to the heat transfer medium storage unit 231a via the first circulation flow path supply pipeline 231d, the fluid connection block 600, and the heat transfer medium supply pipeline 231c. The heat transfer medium is stored in the heat transfer medium storage unit 231a. The heat transfer medium includes an inert gas. According to an embodiment, the heat transfer medium includes helium (He). Helium is supplied to the fluid connection block 600 through the heat transfer medium supply pipeline 231c, supplied to the first circulation flow path 231 from the fluid connection block 600 through the first circulation flow path supply pipeline 231d, and then supplied from the first circulation flow path 231 to the lower surface of the substrate W through the second supply flow paths 233. Helium serves as a medium through which heat transferred from the plasma to the substrate W is transferred to the electrostatic chuck.

[0052] The second circulation flow path 232 is connected to the cooling fluid storage unit 232a via the second circulation flow path supply pipeline 232d, the fluid connection block 600, and the cooling fluid supply pipeline 232c. The cooling fluid is stored in the cooling fluid storage unit 232a. A cooler 232b may be provided in the cooling fluid storage unit 232a. The cooler 232b cools the cooling fluid to a predetermined temperature. Alternatively, the cooler 232b may be installed on the cooling fluid supply pipeline 232c. The cooling fluid supplied to the fluid connection block 600 through the cooling fluid supply pipeline 232c is supplied to the second circulation flow path 232 through the second circulation flow path supply pipeline 232d and circulates along the second circulation flow path 232 to cool the metal plate 230. As the metal plate 230 is cooled, the dielectric plate 220 and the substrate W are also cooled, thereby maintaining the temperature of the substrate W at a predetermined level.

[0053] The edge ring assembly 240 is disposed in the outer peripheral region of the electrostatic chuck. The edge ring assembly 240 has an annular shape and is disposed along the outer periphery of the dielectric plate 220. In addition, the edge ring assembly 240 may be disposed on the upper surface of the insulating cover 280. Refer to Figure 3, the edge ring assembly 240 includes a focus ring 241 and an upper insulating ring 242. The focus ring 241 is formed on the inner side of the upper insulating ring 242 to surround the dielectric plate 220. The focus ring 241 can be made of silicon and can focus the ions generated during the plasma process on the outer peripheral portion of the substrate W. The upper insulating ring 242 is formed on the outer side of the focus ring 241 to surround the focus ring 241. The upper insulating ring 242 can be made of quartz.

[0054] A metal ring 243 made of aluminum is formed on the lower side of the focus ring 241. A lower insulating ring 244 made of an insulating material is formed on the lower sides of the metal ring 243 and the upper insulating ring 242. An edge electrode ring 245 is inserted into the lower insulating ring 244. The edge electrode ring 245 is made of a conductive material. The edge electrode ring 245 is connected to an edge impedance control circuit 240a via an edge electrode line 240c. The edge electrode ring 245 is provided for controlling the impedance of the outer peripheral portion of the support unit 200. The edge electrode ring 245 corresponds to the edge electrode.

[0055] The edge impedance control circuit 240a includes one or more impedance elements (capacitors and inductors). At least one of the impedance elements of the edge impedance control circuit 240a can be a variable impedance element (e.g., a variable capacitor).

[0056] An air gap 285 is formed below the metal plate 230. The air gap 285 is formed between the RF plate 270 and a bottom plate 290 to be described below. The air gap 285 can be surrounded by an insulating cover 280. The air gap 285 electrically insulates the RF plate 270 and the bottom plate 290 from each other.

[0057] The RF plate 270 is disposed below the metal plate 230. The upper surface of the RF plate 270 is in contact with the lower surface of the metal plate 230. The planar shape of the RF plate 270 can be a disk shape. The RF plate 270 is made of a conductive material. For example, the RF plate 270 can be made of aluminum. The RF plate 270 corresponds to the RF electrode.

[0058] The RF plate 270 includes an electrode plate portion 721, a deformed portion 272, and a rod coupling portion 273. The electrode plate portion 271 is formed to have a planar shape corresponding to the planar shape of the metal plate 230. The deformed portion 272 extends downward from the center of the electrode plate portion 271. The deformed portion 272 can be formed such that its diameter gradually decreases in the downward direction. The rod coupling portion 273 extends downward from the lower side of the deformed portion 272.

[0059] The power supply rod 275 can apply power to the RF board 270. The power supply rod 275 can be electrically connected to the RF board 270. The power supply rod 275 can be connected to the RF power supply 235a. The RF power supply 235a generates RF power. The RF power supply 235a can be provided as a high-bias power RF power supply. The RF power supply 235a can include a plurality of RF power supplies. The plurality of RF power supplies can be configured as a combination of one or more of high frequency (27.12 MHz or higher), medium frequency (1 MHz to 27.12 MHz), and low frequency (100 kHz to 1 MHz). The power supply rod 275 receives high-frequency power from the RF power supply 235a. The power supply rod 275 can be made of a conductive material. For example, the power supply rod 275 can be made of a material including metal. The power supply rod 275 can be a metal rod. In addition, the power supply rod 275 can be connected to the impedance matching circuit 235d. The RF power supply 235a and the power supply rod 275 can be interconnected via the impedance matching circuit 235d. The impedance matching circuit 235d includes impedance elements for impedance matching such that maximum power is transferred from the RF power supply 235a to the plasma load. The impedance matching circuit 235d includes one or more impedance elements (capacitors and inductors). At least one of the impedance elements of the impedance matching circuit 235d can be a variable impedance element (e.g., a variable capacitor).

[0060] The insulating cover 280 supports the RF board 270. The insulating cover 280 can be arranged to contact the side surface of the RF board 270. The insulating cover 280 can be arranged to contact the outer peripheral region of the lower surface of the RF board 270. For example, the insulating cover 280 can have a tubular shape with an open upper part and a lower part. In addition, the insulating cover 280 can have a stepped inner side such that the RF board 270 is supported by the insulating cover 280. The insulating cover 280 can be made of an insulating material.

[0061] The bottom plate 290 is configured to be electrically grounded. The power supply rod 275 passes through a through hole formed in the center of the bottom plate 290.

[0062] The fluid connection block 600 is coupled to the RF board 270 and the bottom plate 290 on the lower surface of the metal plate 230. The fluid connection block 600 supplies the heat transfer medium supplied from the heat transfer medium supply line 231c and the cooling fluid supplied from the cooling fluid supply line 232c to the first circulation flow path 231 and the second circulation flow path 232, respectively.

[0063] The lower cover 295 is located at the bottom of the support unit 200. The lower cover 295 is spaced upward from the bottom of the chamber 100. A space having an open upper surface is defined in the lower cover 295. The upper surface of the lower cover 295 is covered by the bottom plate 290. Accordingly, the outer diameter of the cross-section of the lower cover 295 can be formed to be the same as the outer diameter of the bottom plate 290. A lift pin module (not shown) may be disposed in the space of the lower cover 295, and the lift pin module moves the substrate W transferred from an external transfer member to the substrate support surface, that is, the upper surface of the support unit 200.

[0064] The lower cover 295 includes a connection member 297. The connection member 297 connects the outer side surface of the lower cover 295 to the inner side wall of the chamber 100. A plurality of connection members 297 may be disposed on the outer side surface of the lower cover 295 at a predetermined interval. The connection member 297 supports the support unit 200 in the chamber 100. In addition, the connection member 297 is connected to the inner side wall of the chamber 100 such that the lower cover 295 is electrically grounded. A DC power line 223c connected to the DC power supply 223a, a non-sinusoidal power line 224c connected to the non-sinusoidal power supply 224a, a heater power line 225c connected to the heater power supply 225a, an RF power line 235c connected to the RF power supply 235a, a heat transfer medium supply line 231c connected to the heat transfer medium storage unit 231a, and a cooling fluid supply line 232c connected to the cooling fluid storage unit 232a extend into the interior of the lower cover 295 through the space in the connection member 297.

[0065] The lower cover 295 is disposed below the insulating cover 280. The lower cover 295 disposed below the insulating cover 280 is for supporting the insulating cover 280. In addition, the lower cover 295 may be made of a conductive material. For example, the lower cover 295 may be made of a material including a metal. In addition, the lower cover 295 may be electrically connected to the chamber 100. The lower cover 295 may be electrically grounded.

[0066] Reference Figure 2 , the shower head unit 300 can disperse the gas supplied from above. In addition, the shower head unit 300 can allow the gas supplied from the gas supply unit 400 to be uniformly supplied to the processing space. The shower head unit 300 includes a shower head 310 and a gas injection plate 320.

[0067] The showerhead 310 is disposed below the gas injection plate 320. The showerhead 310 is spaced downward from the top surface of the chamber 100 by a predetermined distance. The showerhead 310 is located above the support unit 200. A certain space is defined between the showerhead 310 and the top surface of the chamber 100. The showerhead 310 may be formed in a plate shape with a constant thickness. The lower surface of the showerhead 310 may be anodized to prevent arcing due to plasma. The showerhead 310 may be formed to have the same cross-sectional shape and cross-sectional area as the support unit 200. A plurality of gas supply holes 312 are formed in the showerhead 310. The gas supply holes 312 may be formed to vertically penetrate the upper surface and the lower surface of the showerhead 310.

[0068] The showerhead 310 may be made of a material that reacts with the plasma generated from the gas supplied from the gas supply unit 400 to generate a compound. For example, the showerhead 310 may be made of a material that reacts with the ion having the highest electronegativity among the ions included in the plasma to generate a compound. For example, the showerhead 310 may be made of a material including silicon (Si).

[0069] The gas injection plate 320 is disposed on the showerhead 310. The gas injection plate 320 is placed at a predetermined distance from the top surface of the chamber 100. The gas injection plate 320 may diffuse the gas supplied from above. A plurality of gas introduction holes 322 may be formed in the gas injection plate 320. The gas introduction holes 322 may be formed at positions corresponding to the above gas supply holes 312. The gas introduction holes 322 may communicate with the gas supply holes 312. The gas supplied from above the showerhead unit 300 may sequentially pass through the gas introduction holes 322 and the gas supply holes 312, and then may be supplied to the lower portion of the showerhead 310. The gas injection plate 320 may contain metal. The gas injection plate 320 may be grounded. The gas injection plate 320 may be grounded to be used as an upper electrode.

[0070] The insulating ring 380 is provided to surround the outer peripheries of the showerhead 310 and the gas injection plate 320. The insulating ring 380 may be integrally formed in an annular shape. The insulating ring 380 may be made of a non-metallic material.

[0071] The gas supply unit 400 supplies a process gas to the interior of the chamber 100. The gas supply unit 400 includes a gas supply nozzle 410, a gas supply line 420, and a gas storage unit 430. The gas supply nozzle 410 may be installed at the central portion of the top of the chamber 100. An injection port is formed in the bottom surface of the gas supply nozzle 410. The process gas supplied through the gas supply nozzle 410 passes through the showerhead unit 300 and is supplied into the process space in the chamber 100. The gas supply line 420 connects the gas storage unit 430 to the gas supply nozzle 410. The gas supply line 420 supplies the process gas stored in the gas storage unit 430 to the gas supply nozzle 410. A valve 421 is installed on the gas supply line 420. The valve 421 opens and closes the gas supply line 420 to control the flow rate of the process gas supplied through the gas supply line 420.

[0072] The gas supplied from the gas supply unit 400 may be excited into a plasma state by a plasma source. In addition, the gas supplied from the gas supply unit 400 may be a gas containing fluorine. For example, the gas supplied from the gas supply unit 400 may be carbon tetrafluoride.

[0073] The plasma source excites the process gas into a plasma state in the chamber 100. In an embodiment of the present disclosure, capacitively coupled plasma (CCP) is used as the plasma source. The capacitively coupled plasma may include an upper electrode and a lower electrode in the chamber 100. The upper electrode and the lower electrode may be disposed parallel to each other at the upper portion and the lower portion inside the chamber 100. One of the two electrodes may apply high-frequency power, and the other electrode may be grounded. An electromagnetic field may be formed in the space between the two electrodes, and the process gas supplied to the space may be excited to a plasma state. The substrate processing process is performed using the plasma. In one example, the upper electrode may be provided as the showerhead unit 300, and the lower electrode may be provided as the RF plate 270. High-frequency power may be applied to the lower electrode, and the upper electrode may be grounded. Alternatively, high-frequency power may be applied to both the upper electrode and the lower electrode. Thus, an electromagnetic field is generated between the upper electrode and the lower electrode. The generated electromagnetic field excites the process gas supplied into the interior of the chamber 100 into a plasma state.

[0074] A lining unit (not shown) prevents the inner wall of the chamber 100 and the support unit 200 from being damaged during the processing. The lining unit (not shown) prevents impurities generated during the processing from depositing on the inner wall of the chamber 100 and the support unit 200. The lining unit (not shown) includes an inner lining (not shown) and an outer lining (not shown).

[0075] An outer lining (not shown) is provided on the inner wall of the chamber 100. A space having an open upper surface and a lower surface is defined in the outer lining (not shown). The outer lining (not shown) can be formed in a cylindrical shape. The outer lining (not shown) can have a radius corresponding to the inner surface of the chamber 100. The outer lining (not shown) is provided along the inner surface of the chamber 100. The outer lining (not shown) can be made of aluminum. The outer lining (not shown) protects the inner surface of the chamber 100. During the processing in which the processing gas is excited, arc discharge may occur inside the chamber 100. The arc discharge can damage the chamber 100. The outer lining (not shown) protects the inner surface of the chamber 100 by preventing the inner surface of the chamber 100 from being damaged by the arc discharge.

[0076] An inner lining (not shown) is provided to surround the support unit 200. The inner lining (not shown) is formed in an annular shape. The inner lining (not shown) is provided to surround the insulating cover 280. The inner lining (not shown) can be made of aluminum. The inner lining (not shown) protects the outer surface of the support unit 200.

[0077] The baffle unit 500 is located between the inner wall of the chamber 100 and the support unit 200. The baffle unit 500 is formed in a ring shape. A plurality of through holes are formed in the baffle unit 500. The gas supplied to the inside of the chamber 100 passes through the through holes in the baffle unit 500 and is discharged to the exhaust hole 104. The flow of the gas can be controlled according to the shape of the baffle unit 500 and the shape of the through holes.

[0078] Hereinafter, a substrate processing method according to the present disclosure will be described. In the process of processing the substrate W using plasma, a dry etching process using plasma at an ultra-low temperature (e.g., -70 °C) is known. To create an ultra-low temperature environment, a refrigerant for ultra-low temperature is supplied to the second circulation flow path 232 in the metal plate 230. The processing process is performed on the substrate W using plasma in an ultra-low temperature state. As Figures 5A to 5D shown, when the first substrate W1 is completely processed, the first substrate W1 is discharged to the outside of the chamber 100, the second substrate W2 for subsequent processing is introduced into the chamber 100, and the processing process is performed on the second substrate W2 again in the ultra-low temperature environment.

[0079] However, if an ultra-low temperature environment is maintained when the first substrate W1 is discharged outside the chamber 100 or the second substrate W2 is introduced into the chamber 100, a large number of particles may be adsorbed to the first substrate W1 or the second substrate W2. Therefore, during the waiting time when the first substrate W1 is discharged or the second substrate W2 is introduced, the temperature of the processing space 102 needs to return to room temperature (e.g., 25°C). That is, when the first substrate W1 is completely processed in the ultra-low temperature state, the refrigerant used to achieve the ultra-low temperature needs to be discharged to the outside, and the first substrate W1 needs to wait until the temperature of the first substrate W1 returns to room temperature. The time required for the temperature of the first substrate W1 to recover from the ultra-low temperature to room temperature is about 20 minutes.

[0080] In addition, in order to create an ultra-low temperature environment again after the second substrate W2 is introduced into the chamber 100 at room temperature, the refrigerant used to achieve the ultra-low temperature needs to be supplied to the second circulation path 232 in the metal plate 230, and the second substrate W2 needs to wait until the temperature of the second substrate W2 reaches the ultra-low temperature from room temperature. This process also takes about 20 minutes. That is, the waiting time between the two processing processes is about 40 minutes. Considering that the plasma processing process usually takes about 20 minutes, the waiting time of about 40 minutes is too long. Therefore, the present disclosure provides a substrate processing method capable of shortening the waiting time between processing processes.

[0081] Figure 4 is a flowchart showing the substrate processing method according to the present disclosure. The substrate processing method according to the present disclosure can be executed by the processing module 20 under the control of the controller 40. The processing module 20 according to the present disclosure includes: a chamber 100 in which a processing space 102 is defined; a support unit 200 located in the lower part of the processing space 102; a gas supply unit 400 configured to supply a processing gas to the inside of the chamber 100; and an RF power supply 235a configured to supply RF power for generating plasma.

[0082] The substrate processing method according to the present disclosure includes: a step (S410) of performing a processing process on a first substrate W1 while the first substrate W1 is located on a support unit 200 in a chamber 100 and the temperature of the first substrate W1 is maintained at a first temperature, wherein a processing space 102 is defined in the chamber 100; a step (S420) of forming a plasma in the processing space 102 to raise the temperature of the first substrate W1 to a second temperature higher than the first temperature when the processing process performed on the first substrate W1 is completed; a step (S430) of transferring the first substrate W1 to the outside of the chamber 100 and placing a second substrate W2 on the support unit 200 when the temperature of the first substrate W1 reaches the second temperature; and a step (S440) of performing a processing process on the second substrate W2 while the temperature of the second substrate W2 is lowered to the first temperature. The first temperature is a temperature corresponding to an ultra-low temperature, which is about -70°C, and the second temperature is a temperature corresponding to room temperature, which is about 25°C.

[0083] In step S410, while the first substrate W1 is located on the support unit 200 in the chamber 100 and the temperature of the first substrate W1 is maintained at the first temperature, a processing process is performed on the first substrate W1. The controller 40 performs a processing process on the first substrate W1 while the first substrate W1 is located on the support unit 200 in the chamber 100 and the temperature of the first substrate W1 is maintained at the first temperature. More specifically, the first substrate W1 is placed on the upper surface of the dielectric plate 220 by the substrate transfer robot 34, and the first substrate W1 is tightly adsorbed to the dielectric plate 220 by the electrostatic force applied to the electrostatic electrode 223. In order to create an ultra-low temperature environment, the refrigerant for ultra-low temperature stored in the coolant storage unit 232a is supplied to the second circulation flow path 232 in the metal plate 230 via the coolant supply line 232c, the fluid connection block 600, and the second circulation flow path supply line 232d.

[0084] When the temperature of the first substrate W1 reaches the first temperature, a processing process can be performed on the first substrate W1. Here, the processing process performed on the first substrate W1 is a dry etching process using plasma, which is performed by supplying a first RF power P1 while a first processing gas PG1 is supplied to the processing space 102. The first processing gas PG1 is supplied to the processing space 102 through the gas supply unit 400 and the showerhead unit 300, and the first RF power is applied from the RF power supply 235a to the lower electrode (RF plate 270) of the support unit 200, thereby generating plasma in the processing space 102. The first processing gas is an etchant for etching the first substrate W1. The etchant may include fluorine (F 2 ), hydrogen fluoride (HF), or chlorine (Cl 2 ). As Figure 5AAs shown, a plasma for dry-etching the first substrate W1 is formed by supplying a first processing gas PG1 to the processing space 102 in the chamber 100 at a temperature of -70°C and supplying a first RF power to the lower electrode (RF plate 270) of the support unit 200. A specific material on the first substrate W1 is etched by the plasma. The plasma generated at this time is a high-temperature plasma HP of several hundred to several thousand degrees Celsius (°C), which has high ion and electron energies for etching the first substrate W1.

[0085] In step S420, when the processing of the first substrate W1 is completed, a plasma is formed in the processing space 102 to raise the temperature of the first substrate W1 to a second temperature higher than the first temperature. When the processing of the first substrate W1 is completed, the controller 40 forms a plasma in the processing space 102 to raise the temperature of the first substrate W1 to a second temperature higher than the first temperature. More specifically, when the processing of the first substrate W1 is completed, the supply of the first RF power P1 is interrupted, the first processing gas PG1 for the processing is discharged to the outside through the baffle unit 500, and the refrigerant remaining in the second circulation flow path 232 is discharged to the outside. Thereafter, with the first substrate W1 positioned on the support unit 200, a plasma for controlling the temperature of the first substrate W1 is generated such that the temperature of the first substrate W1 rises from the first temperature to the second temperature.

[0086] As Figure 5B shown, in a state where the second processing gas PG2 is supplied to the processing space 102, the process of raising the temperature of the first substrate W1 to the second temperature is performed by supplying a second RF power P2. The second processing gas PG2 is supplied to the processing space 102 through the gas supply unit 400 and the showerhead unit 300, and the second RF power is applied from the RF power supply 235a to the lower electrode (RF plate 270) of the support unit 200, thereby generating a plasma in the processing space 102. The plasma generated at this time is a low-temperature plasma LP of several tens of degrees Celsius (°C) for controlling the temperature of the first substrate W1 to the second temperature. The second processing gas PG2 for generating the low-temperature plasma LP is argon (Ar). The second RF power P2 for generating the low-temperature plasma LP is lower than the first RF power P1.

[0087] In step S430, when the temperature of the first substrate W1 reaches the second temperature, the first substrate W1 is transferred to the outside of the chamber 100, and the second substrate W2 is placed on the support unit 200. When the temperature of the first substrate W1 reaches the second temperature, the controller 40 transfers the first substrate W1 to the outside of the chamber 100 and places the second substrate W2 on the support unit 200. More specifically, when the temperature of the first substrate W1 reaches the second temperature, the substrate transfer robot 34 transfers the first substrate W1 to the outside of the chamber 100 and then places the first substrate W1 in the load lock chamber 15. Thereafter, the substrate transfer robot 34 places the second substrate W2 on the support unit 200 in the chamber 100. As Figure 5C shown, the first substrate W1 is discharged to the outside of the chamber 100 at the second temperature, and the second substrate W2 is placed on the support unit 200.

[0088] According to the present invention, since the temperature of the first substrate W1 is controlled to room temperature using low-temperature plasma, the waiting time between processing steps can be significantly shortened compared to related art in which the substrate should be kept waiting for a certain period of time. In particular, different from the related art, the temperature of the first substrate W1 can be increased without replacing the refrigerant for ultra-low temperature. The process of controlling the temperature of the first substrate W1 using plasma takes about 1 minute, and it takes about 20 seconds from placing the second substrate W2 on the support unit 200 to starting the processing step. In this way, compared to the related art in which it takes about 40 minutes to adjust from the first temperature to the second temperature and then from the second temperature to the first temperature by replacing the refrigerant, the waiting time is significantly shortened.

[0089] In step S440, the temperature of the second substrate W2 is lowered to the first temperature, and a processing step is performed on the second substrate W2. The controller 40 lowers the temperature of the second substrate W2 to the first temperature and performs a processing step on the second substrate W2. Similar to step S410, the second substrate W2 is tightly adsorbed to the dielectric plate 220 by the electrostatic force applied to the electrostatic electrode 223. To create an ultra-low temperature environment, the refrigerant for ultra-low temperature stored in the coolant storage unit 232a is supplied to the second circulation flow path 232 in the metal plate 230 via the coolant supply line 232c, the fluid connection block 600, and the second circulation flow path supply line 232d.

[0090] When the temperature of the second substrate W2 reaches the first temperature, a processing procedure can be performed on the second substrate W2. Here, the processing procedure performed on the second substrate W2 is a dry etching procedure using plasma, which is performed by supplying a first RF power P1 in a state where a first processing gas PG1 is supplied to the processing space 102. The first processing gas PG1 is supplied to the processing space 102 through the gas supply unit 400 and the showerhead unit 300, and the first RF power is applied from the RF power supply 235a to the lower electrode (RF plate 270) of the support unit 200, thereby generating plasma in the processing space 102. The first processing gas is an etchant for etching the second substrate W2. The etchant may include fluorine (F 2 ), hydrogen fluoride (HF), or chlorine (Cl 2 ). As Figure 5D shown, plasma for dry etching the second substrate W2 is formed by supplying the first processing gas PG1 to the processing space 102 in the chamber 100 at a temperature of -70 °C and supplying the first RF power to the lower electrode (RF plate 270) of the support unit 200. A specific material on the second substrate W2 is etched by the plasma. The plasma generated at this time is a high-temperature plasma HP of several hundred to several thousand degrees Celsius (°C), which has high ion and electron energies for etching the second substrate W2.

[0091] As can be seen from the above description, according to the present disclosure, when the processing procedure on the substrate is completed, the temperature of the substrate is raised using plasma. Therefore, the waiting time between processing procedures can be shortened.

[0092] Although the preferred embodiments of the present disclosure have been disclosed for illustrative purposes, those skilled in the art will understand that various modifications, additions, and substitutions are possible without departing from the scope and spirit of the present disclosure.

[0093] The scope of the present disclosure should be defined only by the appended claims, and all technical concepts within the scope of equivalents of the claims should be construed as falling within the scope of the present disclosure.

Claims

1. A method for treating a substrate using plasma, the method comprising: performing a treatment process on the first substrate in a state where the first substrate is located on a supporting unit in a chamber and a temperature of the first substrate is maintained at a first temperature, wherein a treatment space is defined in the chamber; When the treatment process performed on the first substrate is completed, forming plasma in the processing space to increase the temperature of the first substrate to a second temperature higher than the first temperature; transferring the first substrate to the outside of the chamber when the temperature of the first substrate reaches the second temperature, and placing a second substrate on the supporting unit; as well as The temperature of the second substrate is lowered to the first temperature, and a treatment process is performed on the second substrate. The method according to claim 1 , wherein the first temperature is -70° C. . The method according to claim 1 , wherein the second temperature is 25° C. .

4. The method according to claim 1, wherein the processing process performed on the first substrate and the second substrate is a dry etching process using plasma, and in, The dry etching process is performed by supplying a first radio frequency (RF) power in a state where a first process gas is supplied to the process space. 5 . The method of claim 4 , wherein the increasing the temperature of the first substrate to the second temperature is performed by supplying a second RF power in a state where a second process gas is supplied to the process space.

6. The method according to claim 5, wherein the first process gas is an etchant for etching the first substrate and the second substrate, and The second processing gas is argon (Ar). The method according to claim 5 , wherein the second RF power is a power lower than the first RF power.

8. A processing module for performing a processing process on a substrate, the processing module comprising: a chamber having a processing space defined therein; a support unit located at a lower portion in the processing space; a gas supply unit configured to supply a process gas to the interior of the chamber; as well as an RF power supply configured to provide RF power for generating a plasma, The processing module performs a substrate processing method, the method comprising: performing a treatment process on the first substrate in a state where the first substrate is located on the supporting unit in the chamber and the temperature of the first substrate is maintained at a first temperature; When the treatment process performed on the first substrate is completed, forming plasma in the processing space to increase the temperature of the first substrate to a second temperature higher than the first temperature; transferring the first substrate to the outside of the chamber when the temperature of the first substrate reaches the second temperature, and placing a second substrate on the supporting unit; and The temperature of the second substrate is lowered to the first temperature, and a treatment process is performed on the second substrate.

9. The process module of claim 8, wherein the first temperature is -70°C.

10. The process module of claim 8, wherein the second temperature is 25°C.

11. The process module according to claim 8, wherein the process performed on the first substrate and the second substrate is a dry etching process using plasma, and in, The dry etching process is performed by supplying a first RF power in a state where a first process gas is supplied to the process space. 12 . The process module according to claim 11 , wherein the increasing the temperature of the first substrate to the second temperature is performed by supplying a second RF power in a state where a second process gas is supplied to the process space.

13. The process module of claim 12, wherein the first process gas is an etchant for etching the first substrate and the second substrate, and The second processing gas is argon (Ar).

14. The process module of claim 12, wherein the second RF power is a lower power than the first RF power.

15. A semiconductor manufacturing device comprising: a loader module accommodating a carrier configured to receive a substrate, the loader module being configured to unload the substrate from the carrier or load the substrate to the carrier; a processing module configured to perform a processing process on the substrate; a transfer module configured to transfer the substrate between the loader module and the process module; as well as a controller configured to control the operation of the processing module and the transfer module, The processing module comprises: a chamber, wherein a processing space for processing the substrate is defined in the chamber; a support unit located at a lower portion in the processing space; a gas supply unit configured to supply a process gas to the interior of the chamber; and an RF power supply configured to provide RF power for generating the plasma, and The controller is configured as follows: In a state where the first substrate is located on the supporting unit and the temperature of the first substrate is maintained at a first temperature, performing a treatment process on the first substrate; When the treatment process performed on the first substrate is completed, forming plasma in the processing space to increase the temperature of the first substrate to a second temperature higher than the first temperature; transferring the first substrate to the outside of the chamber when the temperature of the first substrate reaches the second temperature, and placing a second substrate on the supporting unit; and The temperature of the second substrate is lowered to the first temperature, and a treatment process is performed on the second substrate.

16. The semiconductor manufacturing equipment according to claim 15, wherein the first temperature is -70°C, and Wherein the second temperature is 25°C.

17. The semiconductor manufacturing equipment according to claim 15, wherein the processing process performed on the first substrate and the second substrate is a dry etching process using plasma, and in, The dry etching process is performed by supplying a first RF power in a state where a first process gas is supplied to the process space. 18 . The semiconductor manufacturing equipment according to claim 17 , wherein the raising of the temperature of the first substrate to the second temperature is performed by supplying a second RF power in a state where a second process gas is supplied to the process space.

19. The semiconductor manufacturing equipment according to claim 18, wherein the first process gas is an etchant for etching the first substrate and the second substrate, and The second processing gas is argon (Ar). 20 . The semiconductor manufacturing equipment according to claim 18 , wherein the second RF power is a power lower than the first RF power.

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