Self-checking type wafer bonding device for integrated circuit manufacturing

By using the bearing stage assembly and heat recovery assembly in the wafer bonding device, self-testing and reasonable temperature control of the bonding environment are achieved, the problems of unreasonable temperature detection and large power consumption in the prior art are solved, and the effects of efficient bonding and energy saving and environmental protection are achieved.

CN120149210APending Publication Date: 2025-06-13JIANGSU TANGLONG ELECTRONIC TECH CO LTD
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Patent Information

Application Number
CN202510416307.8
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-04-03
Publication Date
2025-06-13

AI Technical Summary

Technical Problem

The existing wafer bonding devices cannot automatically detect the temperature inside the chamber during the bonding process, resulting in unreasonable temperature and environment detection and the heating plate consumes a lot of electricity, which is not conducive to energy conservation and environmental protection.

Method used

A self-test wafer bonding device is designed, using the combination of the carrier stage assembly and the heat recovery assembly. The second cylinder drives the drive assembly to fall, press the double-layer wafers in the carrier stage assembly, and use a laser rangefinder and temperature sensor for temperature regulation and detection to ensure the self-test and temperature control of the bonding environment.

Benefits of technology

The temperature self-test of the wafer during the bonding process is realized to avoid the risks of defects such as cracking, offsetting and holes of solder joints. At the same time, through heat recovery and energy-saving design, energy-saving and environmentally friendly results are achieved.

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Abstract

The invention belongs to the technical field of wafer bonding devices, and particularly relates to a self-checking type wafer bonding device for integrated circuit manufacturing, which comprises a bonding base, a plurality of groups of first cylinders are fixedly connected to the top of the bonding base, and a plurality of groups of second cylinders are fixedly connected to the top of the bonding base. The output ends of the multiple sets of first air cylinders are in transmission connection with bearing table assemblies used for conducting self-detection on the heating temperature of the wafers, the other set of wafers are horizontally attached to the adhesive, then the output ends of the second air cylinders are used for driving the driving assemblies to fall down, the driving assemblies are made to press the double-layer wafers in the bearing table assemblies, and therefore the double-layer wafers in the bearing table assemblies are pressed. And the bearing table assembly and the heat recovery assembly are cooperatively used, so that the temperature of the bearing table assembly can be adjusted and detected before the driving assembly presses the double-layer wafer in the bearing table assembly, the bonding environment in the bearing table assembly can be self-detected, and the wafer is prevented from being damaged in the bonding process. And moreover, the energy-saving and environment-friendly effects can also be achieved.
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Description

Technical Field

[0001] The present invention belongs to the technical field of wafer bonding devices, and particularly relates to a self-checking wafer bonding device for integrated circuit manufacturing. Background Art

[0002] Wafer bonding refers to combining two or more materials into one body, which is an essential and indispensable link in the semiconductor manufacturing process. Due to the complexity of the process, various defects often occur during wafer bonding, such as solder joint cracking, offset, and holes. These defects will greatly affect the performance and reliability of the chip.

[0003] After retrieval, in the prior art, Chinese Patent Publication No. CN221596388U, Authorization Publication Date: August 23, 2024, discloses a wafer bonding device. The wafer bonding device includes: a first driving structure; a heating plate assembly connected to the output end of the first driving structure, and the first driving structure is configured to drive the heating plate assembly to move in the vertical direction; at least one second driving structure; a cooling plate assembly connected to the output end of the second driving structure, the cooling plate assembly includes a first cooling plate, and the second driving structure is configured to drive the cooling plate assembly to move in the vertical direction so that the first cooling plate approaches or moves away from the heating plate assembly.

[0004] However, this device still has the following defects: Although it is beneficial to improve the bonding effect of the wafer, during the bonding process, the temperature of the wafer inside the chamber cannot be automatically detected. Relying on the existing heating plate easily leads to an unreasonable detection of the temperature environment inside the chamber, and the continuously working heating plate consumes a large amount of electrical energy, which is not conducive to energy conservation and environmental protection. Summary of the Invention

[0005] In view of the above problems, the present invention provides a self-checking wafer bonding device for integrated circuit manufacturing, including a bonding base. A plurality of groups of first cylinders are fixedly connected to the top of the bonding base. The output ends of the plurality of groups of first cylinders are all drivingly connected to a carrier assembly for self-detecting the heating temperature of the wafer. A heat recovery assembly for storage is slidably connected to one side wall of the carrier assembly. A driving assembly for bonding and forming is arranged on the top of the carrier assembly. Two groups of second cylinders are embedded and installed on the top of the driving assembly, and the output ends of the two groups of second cylinders are both drivingly connected to the top of the carrier assembly.

[0006] Further, the carrier assembly includes a carrier; a bonding groove is formed on the top of the carrier, and the bonding groove is used for placing the wafer. A plurality of groups of adsorption tubes penetrate through the bottom of the carrier, and the bottoms of the plurality of groups of adsorption tubes are all communicated with a vacuum pump. One side of the vacuum pump away from the output end is fixedly connected to the top of the bonding base.

[0007] Further, both sides of the bottom of the carrier table are fixedly connected with electric push rods, and the output ends of the two groups of electric push rods are both drivingly connected with linkage rods. The top ends of the linkage rods are both drivingly connected with limiting plates. One end of each of the two groups of limiting plates penetrates through the side wall of the carrier table and extends into the bonding groove. A temperature sensor is arranged at the bottom of one of the limiting plates, and an air pump is arranged at the bottom of the other limiting plate. A storage cavity for storing the temperature sensor and the air pump is formed in the inner wall of the bonding groove.

[0008] Further, two flow guiding cavities are further formed in the top of the carrier table, and the two flow guiding cavities are symmetrically arranged with the central axis of the carrier table as the center. Cover plates are arranged at the tops of the two flow guiding cavities, and the two flow guiding cavities are connected with flow guiding holes. A return hole is formed in the side wall of the carrier table, and the other end of the return hole extends into the flow guiding cavity. An overflow hole is formed in the side wall of the carrier table and close to the return hole, and a three-way valve is connected to the side of the carrier table far away from the overflow hole.

[0009] Further, the heat recovery component includes a heat preservation box; one side wall of the heat preservation box is fixedly connected with an electric telescopic rod, and the output end of the electric telescopic rod is drivingly connected with the outer wall of the carrier table.

[0010] Further, a solenoid valve is embedded in one side wall of the heat preservation box, and the solenoid valve is communicated with the overflow hole. A gas pressurizing pump is embedded at the bottom of the heat preservation box and close to the solenoid valve.

[0011] Further, a delivery pipe is communicated with the side wall of the heat preservation box, and the other end of the delivery pipe penetrates through the return hole and extends into the flow guiding cavity.

[0012] Further, the driving component includes a linkage plate; a bracket is fixedly connected to the top of the linkage plate, and a pressing member penetrates through the surface of the linkage plate.

[0013] Further, a sealing rubber ring is arranged at the bottom of the pressing member and close to the edge, and the diameter of the pressing member is the same as the inner diameter of the bonding groove. A moving plate is fixedly connected to the top of the pressing member, a laser rangefinder is embedded in the surface of the moving plate, and two motors are fixedly connected to the top of the bracket.

[0014] Further, the output ends of the two motors are both drivingly connected with lead screws, and the lead screws are in threaded connection with the moving plate. A plurality of adjusting grooves are formed in the surface of the linkage plate, and air nozzles are rotatably connected to the inner walls of the plurality of adjusting grooves.

[0015] The beneficial effects of the present invention are: 1. The top of the carrier assembly is used to store a group of wafers. After applying an adhesive to the top surface of this group of wafers, another group of wafers is horizontally attached to the adhesive. Then, the output end of the second cylinder drives the driving assembly to drop, so that the driving assembly presses the double-layer wafers in the carrier assembly. The combined use of the carrier assembly and the heat recovery assembly can adjust and detect the temperature of the carrier assembly before the driving assembly presses the double-layer wafers in the carrier assembly, enabling the bonding environment in the carrier assembly to self-check, avoiding risks such as solder joint cracking, offset, and holes during the wafer bonding process, and also achieving the effect of energy conservation and environmental protection.

[0016] 2. Before the output end of the second cylinder drives the pressing member to drop, first, the output end of the motor drives the lead screw to rotate, causing the moving plate to lift and lower along the radial direction of the lead screw. The continuous operation of the laser rangefinder is used to detect the distance between the moving plate and the linkage plate, analyze the depth that the pressing member can enter the bonding groove, and customize the pressing depth of the pressing member according to wafers of different thicknesses to ensure the bonding of multiple groups of wafers within a reasonable height range.

[0017] 3. After the output end of the second cylinder drives the pressing member to drop, the sealing rubber ring at the bottom edge of the pressing member first fits with the top edge of the bonding groove. After the limiting plate plays a role in limiting the pressing member, the airtightness inside the bonding groove is enhanced. Then, one end of the three-way valve is connected to the heating pipe, so that the two diversion cavities are interconnected with each other through the diversion holes to conduct warm air, and quickly preheat the internal temperature environment of the bonding groove, raising the temperature of multiple groups of wafers in the bonding groove to a suitable temperature for bonding, and improving the efficiency of raising the bonding environment temperature.

[0018] 4. After the output end of the second cylinder drives the pressing member to continuously press down and bond multiple groups of wafers in the bonding groove, the other end of the three-way valve is connected to the fan. The warm air in the diversion cavity enters the solenoid valve through the overflow hole and is stored in the heat preservation box. Then, the output end of the electric telescopic rod pushes the heat preservation box, so that the solenoid valve and the overflow hole move away from each other. The continuous operation of the fan can continuously blow the heat in the diversion cavity out through the overflow hole until the purpose of quickly cooling the internal temperature of the bonding groove is achieved, improving the efficiency of quickly cooling the wafers and the adhesive.

[0019] Other features and advantages of the present invention will be described in the following specification, and, in part, will become apparent from the specification or will be understood by implementing the present invention. The objectives and other advantages of the present invention can be realized and obtained by the structures pointed out in the specification, claims, and drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the drawings in the following description are some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0021] Figure 1 Shows a schematic structural diagram of the self-checking type wafer bonding device according to an embodiment of the present invention; Figure 2 Shows a schematic structural diagram of the carrier table assembly according to an embodiment of the present invention Figure 1 ; Figure 3 Shows a schematic structural diagram of the carrier table assembly according to an embodiment of the present invention Figure 2 ; Figure 4 Shows a schematic structural diagram of the heat recovery assembly according to an embodiment of the present invention; Figure 5 Shows a schematic structural diagram of the drive assembly according to an embodiment of the present invention Figure 1 ; Figure 6 Shows a schematic structural diagram of the drive assembly according to an embodiment of the present invention Figure 2 。

[0022] In the figure: 1. Bonding base; 2. First cylinder; 3. Carrier table assembly; 31. Carrier table; 32. Bonding groove; 33. Adsorption tube; 34. Vacuum pump; 35. Cover plate; 36. Electric push rod; 37. Linking rod; 38. Limiting plate; 39. Temperature sensor; 310. Diversion cavity; 311. Diversion hole; 312. Return hole; 313. Overflow hole; 314. Three-way valve; 4. Heat recovery assembly; 41. Heat preservation box; 42. Electric telescopic rod; 43. Solenoid valve; 44. Gas pressure pump; 45. Delivery pipe; 5. Drive assembly; 51. Linking plate; 52. Bracket; 53. Pressing member; 54. Sealing rubber ring; 55. Moving plate; 56. Laser rangefinder; 57. Motor; 58. Lead screw; 59. Adjusting groove; 510. Air nozzle; 6. Second cylinder. Detailed implementation manners

[0023] To make the objectives, technical solutions and advantages of the embodiments of the present invention clearer, the following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are some but not all of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of protection of the present invention.

[0024] The embodiment of the present invention provides a self-testing wafer bonding device for integrated circuit manufacturing, including a bonding base 1; illustratively, as Figure 1 shown.

[0025] A plurality of groups of first cylinders 2 are fixedly connected to the top of the bonding base 1, and the output ends of the plurality of first cylinders 2 are transmission-connected to a carrier platform assembly 3 for heating and cooling the wafer. A heat recovery assembly 4 for storage is slidably connected to a side wall of the carrier platform assembly 3. A driving assembly 5 for bonding and forming is arranged on the top of the carrier platform assembly 3, and two groups of second cylinders 6 are embedded and installed on the top of the driving assembly 5, and the output ends of the two groups of second cylinders 6 are transmission-connected to the top of the carrier platform assembly 3.

[0026] Specifically, the top of the carrier assembly 3 is used to store a group of wafers. After the adhesive is applied to the top surface of the group of wafers, another group of wafers are horizontally attached to the adhesive, and then the output end of the second cylinder 6 is used to drive the driving assembly 5 to fall, so that the driving assembly 5 presses the double-layer wafers in the carrier assembly 3. The carrier assembly 3 and the heat recovery assembly 4 are used in combination to adjust and detect the temperature of the carrier assembly 3 before the driving assembly 5 presses the double-layer wafers in the carrier assembly 3, so that the bonding environment in the carrier assembly 3 can be self-checked.

[0027] The carrier assembly 3 includes a carrier 31; illustratively, as Figure 2 and Figure 3 shown.

[0028] A bonding groove 32 is formed at the top of the carrier table 31, and the bonding groove 32 is used to place the wafer. A plurality of groups of adsorption tubes 33 are connected through the bottom of the carrier table 31. The bottoms of the plurality of groups of adsorption tubes 33 are all communicated with a vacuum pump 34. One side of the vacuum pump 34 away from the output end is fixedly connected to the top of the bonding base 1. Both sides of the bottom of the carrier table 31 are fixedly connected with electric push rods 36. The output ends of the two electric push rods 36 are both connected with a linkage rod 37 in a transmission manner. The top ends of the linkage rods 37 are both connected with a limiting plate 38 in a transmission manner. One end of each of the two limiting plates 38 penetrates through the side wall of the carrier table 31 and extends into the bonding groove 32. A temperature sensor 39 is arranged at the bottom of one of the limiting plates 38, and an air pump is arranged at the bottom of the other limiting plate 38. A storage cavity for storing the temperature sensor 39 and the air pump is formed on the inner wall of the bonding groove 32. Two flow guide cavities 310 are further formed at the top of the carrier table 31, and the two flow guide cavities 310 are symmetrically arranged with the central axis of the carrier table 31 as the center. Cover plates 35 are arranged at the tops of the two flow guide cavities 310, and the two flow guide cavities 310 are connected with flow guide holes 311. A return hole 312 is formed in the side wall of the carrier table 31, and the other end of the return hole 312 extends into the flow guide cavity 310. An overflow hole 313 is formed in the side wall of the carrier table 31 and close to the return hole 312. A three-way valve 314 is connected to the side wall of the carrier table 31 and away from the overflow hole 313.

[0029] Further, an electric heating wire is arranged on the inner wall of the three-way valve 314 and close to the flow guide cavity 310. By using the electric heating wire and the temperature sensor 39 in the prior art in cooperation, when the temperature in the bonding groove 32 is too low and does not meet the bonding environment, the temperature of the warm air entering the three-way valve 314 can be increased under the working state of the electric heating wire, so as to ensure that the temperature in the bonding groove 32 is continuously stable.

[0030] The heat recovery assembly 4 includes a heat preservation box 41; Exemplarily, as Figure 4 shown.

[0031] One side wall of the heat preservation box 41 is fixedly connected with an electric telescopic rod 42, and the output end of the electric telescopic rod 42 is in transmission connection with the outer wall of the carrier table 31. An electromagnetic valve 43 is embedded in one side wall of the heat preservation box 41, and the electromagnetic valve 43 is communicated with the overflow hole 313. A gas pressurization pump 44 is embedded at the bottom of the heat preservation box 41 and close to the electromagnetic valve 43. A delivery pipe 45 is communicated with the side wall of the heat preservation box 41. The other end of the delivery pipe 45 penetrates through the return hole 312 and extends into the flow guide cavity 310.

[0032] The driving assembly 5 includes a linkage plate 51; Exemplarily, as Figure 5 and Figure 6as shown

[0033] A bracket 52 is fixedly connected to the top of the linkage plate 51. A pressing member 53 penetrates through the surface of the linkage plate 51. A sealing rubber ring 54 is arranged at the bottom of the pressing member 53 and near the edge. The diameter of the pressing member 53 is the same as the inner diameter of the bonding groove 32. A moving plate 55 is fixedly connected to the top of the pressing member 53. A laser rangefinder 56 is embedded in the surface of the moving plate 55. Two motors 57 are fixedly connected to the top of the bracket 52. The output ends of the two motors 57 are both drivingly connected to a lead screw 58, and the lead screw 58 is threadedly connected to the moving plate 55. A plurality of adjustment grooves 59 are formed in the surface of the linkage plate 51, and air nozzles 510 are rotatably connected to the inner walls of the plurality of adjustment grooves 59.

[0034] Specifically, the bottom end of the inner wall of the bonding groove 32 is used to store a group of wafers. Before using a manipulator to apply an adhesive to the top surface of the wafers, while adjusting the angles of the air nozzles 510 in a plurality of adjustment grooves 59 on the surface of the moving plate 55, the upper surface of a group of wafers is cleaned of contaminants. Then, a manipulator is used to apply an adhesive to the top surface of a group of wafers. Then, another group of wafers is horizontally placed in the bonding groove 32 by the manipulator, so that the two groups of wafers are in a state of being horizontally bonded with the adhesive. Before the output end of the second cylinder 6 drives the pressing member 53 to drop, first, the output end of the motor 57 drives the lead screw 58 to rotate, so that the moving plate 55 moves up and down along the radial direction of the lead screw 58. The laser rangefinder 56 continuously works to detect the distance between the moving plate 55 and the linkage plate 51, analyze the depth that the pressing member 53 can enter into the bonding groove 32, and custom-adjust the pressing depth of the pressing member 53 according to wafers of different thicknesses to ensure that multiple groups of wafers are bonded within a reasonable height range. After the output end of the second cylinder 6 drives the pressing member 53 to drop, the sealing rubber ring 54 at the bottom edge of the pressing member 53 first fits with the top edge of the bonding groove 32. After the limiting plate 38 limits the pressing member 53, the airtightness inside the bonding groove 32 is enhanced. Then, one end of the three-way valve 314 is connected to the heating pipe, so that the two diversion cavities 310 are connected to each other to conduct hot air under the action of the diversion holes 311, and the internal temperature environment of the bonding groove 32 is quickly preheated, so that the multiple groups of wafers in the bonding groove 32 are heated to a temperature suitable for bonding. The temperature sensor 39 is used to self-detect the temperature inside the bonding groove 32. When the temperature reaches the bonding temperature, the supply of hot air is cut off by the action of the three-way valve 314, and the inside of the bonding groove 32 is in a state of continuous constant temperature. Then, the air pump continuously works to supplement an appropriate pressure into the heated bonding groove 32, so as to form a risk-free environment in the bonding groove 32 to avoid situations such as solder joint cracking, offset, and holes during the bonding process of the wafers. The output end of the second cylinder 6 drives the continuous downward pressure of the pressing member 53. After bonding multiple groups of wafers in the bonding groove 32, the other end of the three-way valve 314 is connected to the blower, and the warm air in the diversion cavity 310 enters the solenoid valve 43 through the overflow hole 313 and is stored in the heat preservation box 41. Then, the output end of the electric telescopic rod 42 pushes the heat preservation box 41. After the solenoid valve 43 and the overflow hole 313 are moved away from each other, the blower can continuously blow the heat in the diversion cavity 310 out through the overflow hole 313 until the purpose of quickly cooling the temperature inside the bonding groove 32 is achieved; The output end of the first cylinder 2 drives the carrier table 31 to drop, keeping the horizontal positions of several adsorption tubes 33 unchanged. The dropping of the carrier table 31 separates the wafers from the bonding groove 32 for the removal of multiple groups of wafers after bonding; The output end of the electric telescopic rod 42 drives the heat preservation box 41 to slide and reset. After the solenoid valve 43 and the overflow hole 313 are docked, the continuous operation of the gas pressure pump 44 causes the heat stored in the heat preservation box 41 to enter the diversion cavity 310 again through the delivery pipe 45 for the purpose of recycling and utilization of the heat during the previous bonding process.

[0035] A self-checking wafer bonding device for integrated circuit manufacturing proposed by an embodiment of the present invention has the following working principle: Before a group of wafers are placed on the inner bottom end of the bonding groove 32 and the top surface of the wafers is coated with adhesive by the manipulator, while adjusting the angles of the air nozzles 510 in several adjustment grooves 59 on the surface of the moving plate 55, the upper surface of a group of wafers is cleaned of contaminants. Then, the top surface of a group of wafers is coated with adhesive by the manipulator, and another group of wafers is horizontally placed in the bonding groove 32 by the manipulator to make the two groups of wafers fit horizontally with the adhesive; Before the output end of the second cylinder 6 drives the pressing member 53 to drop, first, the output end of the motor 57 drives the lead screw 58 to rotate, causing the moving plate 55 to move up and down along the radial direction of the lead screw 58. The continuous operation of the laser rangefinder 56 is used to detect the distance between the moving plate 55 and the linkage plate 51, analyze the depth that the pressing member 53 can enter the bonding groove 32, and custom-adjust the pressing depth of the pressing member 53 according to wafers of different thicknesses to ensure the bonding of multiple groups of wafers within a reasonable height range; After the output end of the second cylinder 6 drives the pressing member 53 to fall, the sealing rubber ring 54 at the bottom edge of the pressing member 53 first fits with the top edge of the bonding groove 32, and after the limiting plate 38 plays a role in limiting the pressing member 53, the air tightness inside the bonding groove 32 is enhanced. Then, after one end of the three-way valve 314 is connected to the heating pipe, the two diversion cavities 310 are connected to each other to conduct heating air under the action of the diversion holes 311, and the internal temperature environment of the bonding groove 32 is quickly preheated, so that multiple groups of wafers in the bonding groove 32 are heated to a temperature suitable for bonding; The temperature sensor 39 is used to self-detect the temperature inside the bonding groove 32. When the temperature reaches the bonding temperature, the supply of warm air is cut off by the action of the three-way valve 314, and the inside of the bonding groove 32 is in a continuous constant temperature state. Then, by the continuous operation of the air pump, an appropriate pressure is supplemented into the heated bonding groove 32, so as to form a risk avoidance for situations such as solder joint cracking, offset, and holes during the bonding process of the wafers in the bonding groove 32; After the output end of the second cylinder 6 drives the pressing member 53 to continuously press down to bond multiple groups of wafers in the bonding groove 32, the other end of the three-way valve 314 is connected to the blower, and the heating air in the diversion cavity 310 enters the solenoid valve 43 through the overflow hole 313 and is stored in the heat preservation box 41. Then, the output end of the electric telescopic rod 42 pushes the heat preservation box 41. After the solenoid valve 43 and the overflow hole 313 are separated from each other, the continuous operation of the blower can continuously blow the heat in the diversion cavity 310 outwards through the overflow hole 313 until the purpose of quickly cooling the internal temperature of the bonding groove 32 is achieved; The output end of the first cylinder 2 drives the carrier 31 to fall, so that the horizontal positions of several adsorption tubes 33 remain unchanged, and the falling of the carrier 31 separates the wafers from the inside of the bonding groove 32 for the removal of multiple groups of wafers after bonding; The output end of the electric telescopic rod 42 drives the heat preservation box 41 to slide and reset. After the solenoid valve 43 is docked with the overflow hole 313, by the continuous operation of the gas pressure pump 44, the heat stored in the heat preservation box 41 enters the diversion cavity 310 again through the delivery pipe 45 for the purpose of recycling and utilization of the heat during the previous bonding process.

[0036] Although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A self-checking wafer bonding device for integrated circuit manufacturing, characterized in that: It comprises a bonding base, the top of which is fixedly connected with a plurality of groups of first cylinders, the output ends of the plurality of groups of the first cylinders are all transmission-connected with a carrier assembly for self-detecting the heating temperature of the wafer, a side wall of the carrier assembly is slidably connected with a heat recovery assembly for storage, a driving assembly for bonding and forming is arranged on the top of the carrier assembly, two groups of second cylinders are embedded in the top of the driving assembly, and the output ends of the two groups of the second cylinders are all transmission-connected with the top of the carrier assembly.

2. The self-checking wafer bonding device for integrated circuit manufacturing according to claim 1, characterized in that: The carrier platform assembly includes a carrier platform; a bonding groove is provided on the top of the carrier platform, and the bonding groove is used to place the wafer; a plurality of groups of adsorption tubes are connected through the bottom of the carrier platform, and the bottoms of the plurality of groups of adsorption tubes are connected to vacuum pumps, and the side of the vacuum pump away from the output end is fixedly connected to the top of the bonding base.

3. The self-checking wafer bonding device for integrated circuit manufacturing according to claim 2, characterized in that: Electric push rods are fixedly connected to both sides of the bottom of the support platform, and the output ends of the two groups of electric push rods are transmission-connected with linkage rods, and the top ends of the linkage rods are transmission-connected with limit plates, one end of the two groups of limit plates penetrates the side walls of the support platform and extends into the keying grooves, a temperature sensor is provided at the bottom of one group of limit plates, and an air pump is provided at the bottom of the other group of limit plates, and a storage cavity for storing the temperature sensor and the air pump is provided on the inner wall of the keying groove.

4. The self-checking wafer bonding device for integrated circuit manufacturing according to claim 3, characterized in that: Two groups of guide cavities are also provided on the top of the carrier platform, and the two groups of guide cavities are symmetrically arranged with the central axis of the carrier platform as the center, the tops of the two groups of guide cavities are provided with cover plates, and the two groups of guide cavities are connected with guide holes, the side wall of the carrier platform is provided with a reflux hole, and the other end of the reflux hole extends into the guide cavity, the side wall of the carrier platform and the side close to the reflux hole is provided with an overflow hole, and the side of the side wall of the carrier platform away from the overflow hole is connected with a three-way valve.

5. The self-checking wafer bonding device for integrated circuit manufacturing according to claim 1, characterized in that: The heat recovery component comprises a heat preservation box; a side wall of the heat preservation box is fixedly connected with an electric telescopic rod, and an output end of the electric telescopic rod is transmission-connected to an outer wall of a bearing platform.

6. The self-checking wafer bonding device for integrated circuit manufacturing according to claim 5, characterized in that: A solenoid valve is embedded and installed on one side wall of the heat preservation box, and the solenoid valve is communicated with the overflow hole. A gas pressure pump is embedded and installed on the bottom of the heat preservation box and on one side close to the solenoid valve.

7. The self-checking wafer bonding device for integrated circuit manufacturing according to claim 6, characterized in that: The side wall of the heat preservation box is connected with a delivery pipe, and the other end of the delivery pipe passes through the reflux hole and extends into the guide cavity.

8. The self-checking wafer bonding device for integrated circuit manufacturing according to claim 1, characterized in that: The driving assembly comprises a linkage plate; a bracket is fixedly connected to the top of the linkage plate, and a pressing piece penetrates the surface of the linkage plate.

9. The self-checking wafer bonding device for integrated circuit manufacturing according to claim 8, characterized in that: A sealing rubber ring is provided at the bottom of the pressing part and near the edge, and the diameter of the pressing part is the same as the inner diameter of the keying groove. A moving plate is fixedly connected to the top of the pressing part, a laser rangefinder is embedded and installed on the surface of the moving plate, and two sets of motors are fixedly connected to the top of the bracket.

10. The self-checking wafer bonding device for integrated circuit manufacturing according to claim 9, characterized in that: The output ends of the two groups of motors are both transmission-connected with screw rods, and the screw rods are threadedly connected to the moving plate. The surface of the linkage plate is provided with a plurality of adjustment grooves, and the inner walls of the plurality of adjustment grooves are rotatably connected with air nozzles.

Citation Information

Patent Citations

  • Wafer bonding device

    CN221596388U