Silane precursors and methods related thereto

Abstract

The present disclosure provides silane precursors and methods related thereto. A method for preparing a silane precursor may include one or more of the following steps: contacting a dihalosilane compound with an amine in a first solvent to obtain a first reaction product; and contacting the first reaction product with a reducing agent in a second solvent to obtain a second reaction product.

Description

Technical Field

[0001] The present disclosure relates to silane precursors for vapor deposition processes and related methods thereof. Background Art

[0002] Vapor deposition processes use precursors. The precursors are vaporized and deposited as a film on a substrate. Summary of the Invention

[0003] Some embodiments of the present disclosure relate to a precursor. In some embodiments, the precursor comprises a compound of the following formula:

[0004]

[0005] Wherein:

[0006] X is F, Cl, Br or I;

[0007] R 1 and R 2 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl or benzyl;

[0008] A is an amine;

[0009] Q is a bond or -SiR 3 R 4 -

[0010] where R 3 and R 4 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl or benzyl.

[0011] Some embodiments of the present disclosure relate to a precursor. In some embodiments, the precursor comprises a compound of the following formula:

[0012]

[0013] Wherein:

[0014] R 1 and R 2 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl or benzyl;

[0015] A is an amine;

[0016] Q is a bond or -SiR 3 R 4 -

[0017] where R 3 and R 4 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl or benzyl.

[0018] Some embodiments of the present disclosure relate to a method for forming a precursor. In some embodiments, the method includes one or more of the following steps: contacting a dihalosilane compound with an amine in a first solvent to obtain a first reaction product, and contacting the first reaction product with a reducing agent in a second solvent to obtain a second reaction product.

[0019] Some embodiments of the present disclosure relate to a method for chemical vapor deposition. In some embodiments, the method for chemical vapor deposition includes one or more of the following steps: obtaining a precursor; vaporizing the precursor to obtain a vaporized precursor; and contacting the vaporized precursor with a substrate under chemical vapor deposition conditions to form a silicon-containing film on the substrate.

[0020] Some embodiments of the present disclosure relate to an article. In some embodiments, the article includes a substrate and a silicon-containing film on a surface of the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Some embodiments of the present disclosure are described herein only by way of example and with reference to the accompanying drawings. Now, with particular reference to the drawings in detail, it is emphasized that the embodiments shown herein are by way of example and for purposes of illustrative discussion of the embodiments of the present disclosure. In this regard, the description in conjunction with the drawings enables those skilled in the art to clearly understand how to practice the embodiments of the present disclosure.

[0022] Figure 1 is a flowchart of a method for preparing a silane precursor according to some embodiments.

[0023] Figure 2 is a flowchart of a method for preparing a silicon-containing film according to some embodiments.

[0024] Figure 3 is a schematic diagram of a silicon-containing film on a substrate surface according to some embodiments.

[0025] Figure 4 is the 1 H NMR spectrum of N-ethyl-N-methyl(1,1,2,2-tetramethyldisilanyl)amine according to some embodiments. DETAILED DESCRIPTION

[0026] Among the benefits and improvements already disclosed, other objects and advantages of the present disclosure will become apparent from the following description in conjunction with the drawings. Specific embodiments of the present disclosure are disclosed herein; however, it should be understood that the disclosed embodiments are merely illustrative of the present disclosure which can be embodied in various forms. Additionally, each example given with respect to the various embodiments of the present disclosure is intended to be illustrative and not limiting.

[0027] Any existing patents and publications mentioned herein are incorporated herein by reference in their entirety.

[0028] Throughout this specification and the appended claims, unless the context clearly dictates otherwise, the following terms have the meanings explicitly associated herein. As used herein, the phrases "in one embodiment," "in an embodiment," and "in some embodiments" do not necessarily refer to the same embodiment, although they may. Additionally, the phrases "in another embodiment" and "in some other embodiments" as used herein do not necessarily refer to different embodiments, although they may. All embodiments of the present disclosure are intended to be combinable without departing from the scope or spirit of the present disclosure.

[0029] As used herein, unless the context clearly dictates otherwise, the term "based on" is not exclusive and allows for additional factors not described. Additionally, throughout this specification, the meanings of "a," "an," and "the" include plural referents. The meaning of "in" includes "in" and "on."

[0030] As used herein, the term "alkyl" refers to a hydrocarbon chain group having from 1 to 30 carbon atoms. The alkyl may be attached via a single bond. An alkyl having n carbon atoms may be named "C n alkyl". For example, "C 3 alkyl" may include n-propyl and isopropyl. An alkyl having a range of carbon atoms (such as from 1 to 30 carbon atoms) may be named C 1 -C 30 alkyl. In some embodiments, the alkyl is straight-chain. In some embodiments, the alkyl is branched-chain. In some embodiments, the alkyl is substituted. In some embodiments, the alkyl is unsubstituted. In some embodiments, the alkyl may comprise at least one of, consist of, consist essentially of, or be optionally selected from the group consisting of: C 1 -C 12 alkyl, C 1 -C 11 alkyl, C 1 -C 10 alkyl, C 1 -C 9 alkyl, C 1 -C 8 alkyl, C 1 -C 7 alkyl, C 1 -C 6 alkyl, C 1 -C 5 alkyl, C 1 -C 4 alkyl, C 1 -C3 alkyl, C 2 -C 10 alkyl, C 3 -C 10 alkyl, C 4 -C 10 alkyl, C 5 -C 10 alkyl, C 6 -C 10 alkyl, C 7 -C 10 alkyl, C 8 -C 10 alkyl, C 2 -C 9 alkyl, C 2 -C 8 alkyl, C 2 -C 7 alkyl, C 2 -C 6 alkyl, C 2 -C 5 alkyl, C 3 -C 5 alkyl, C 3 -C 4 alkyl, or any combination thereof. In some embodiments, the alkyl may comprise at least one of, consist of, consist essentially of, or alternatively consist of the group consisting of: methyl, ethyl, n-propyl, 1-methylethyl (isopropyl), n-butyl, isobutyl, sec-butyl, n-pentyl, 1,1-dimethylethyl (tert-butyl), n-pentyl, isopentyl, n-hexyl, isohexyl, 3-methylhexyl, 2-methylhexyl, octyl, decyl, dodecyl, octadecyl, or any combination thereof. In some embodiments, the alkyl is substituted with one or more substituents.

[0031] As used herein, the term "alkenyl" refers to a hydrocarbon chain group having 1 to 10 carbon atoms and at least one carbon-carbon double bond. Examples of alkenyl include, but are not limited to, at least one of the following: vinyl, allyl, 1-methylethenyl, 1-propenyl, 1-butenyl, 2-butenyl, 3-butenyl, 1,3-butadienyl, 2-methyl-1-propenyl, 2-methyl-2-propenyl, 1-pentenyl, 2-pentenyl, 3-pentenyl, 4-pentenyl, 1,3-pentadienyl, 2,4-pentadienyl, 1,4-pentadienyl, 3-methyl-2-butenyl, 1-hexenyl, 2-hexenyl, 3-hexenyl, 1,3-hexadienyl, 1,4-hexadienyl, 2-methylpentenyl, 1-heptenyl, 3-heptenyl, 1-octenyl, 1,3-octadienyl, 1-nonenyl, 2-nonenyl, 3-nonenyl, 1-decenyl, 3-decenyl, 1-undecenyl, oleyl, linoleyl, linolenyl, or any combination thereof. In some embodiments, the alkenyl is substituted with one or more substituents.

[0032] As used herein, the term "alkynyl" refers to a hydrocarbon chain group having 1 to 10 carbon atoms and at least one carbon-carbon triple bond. Examples of alkynyl include, but are not limited to, at least one of the following: ethynyl, propynyl, n-butynyl, n-pentynyl, 3-methyl-1-butynyl, n-hexynyl, methyl-pentynyl, or any combination thereof. In some embodiments, the alkynyl is substituted with one or more substituents.

[0033] As used herein, the term "cycloalkyl" refers to a non-aromatic carbocyclic group attached via a single bond and having 3 to 8 carbon atoms in the ring. In some embodiments, the cycloalkyl contains C 3 -C 6 cycloalkyl. The term includes monocyclic non-aromatic carbocycles and polycyclic non-aromatic carbocycles. For example, two or more cycloalkyls can be fused, bridged, or fused and bridged to obtain the polycyclic non-aromatic carbocycle. In some embodiments, the cycloalkyl can contain at least one of, consist of, consist essentially of, or be optionally selected from the group consisting of: cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, or any combination thereof. In some embodiments, the cycloalkyl is substituted with one or more substituents.

[0034] As used herein, the term "aryl" refers to a monocyclic or polycyclic aromatic hydrocarbon group. The number of carbon atoms of the aryl can range from 5 carbon atoms to 20 carbon atoms. For example, in some embodiments, the aryl has 6 to 8 carbon atoms, 6 to 10 carbon atoms, 6 to 12 carbon atoms, 6 to 15 carbon atoms, or 6 to 20 carbon atoms. The term "monocyclic" when used as a modifier refers to an aryl having a single aromatic ring structure. The term "polycyclic" when used as a modifier refers to an aryl having more than one aromatic ring structure, which can be a fused, bridged, spiro, or otherwise bonded ring structure. Examples of aryl include (but are not limited to) phenyl, biphenyl, naphthyl, and the like. In some embodiments, the aryl is substituted with one or more substituents.

[0035] Non-limiting examples of aryl include (but are not limited to) at least one of the following: benzene, toluene, xylene (e.g., o-xylene, m-xylene, p-xylene), tert-butyltoluene (e.g., o-tert-butyltoluene, m-tert-butyltoluene, p-tert-butyltoluene), ethylmethylbenzene (e.g., 1-ethyl-4-methylbenzene, 1-ethyl-3-methylbenzene), 1-isopropyl-4-methylbenzene, 1-tert-butyl-4-methylbenzene, mesitylene, pseudocumene, durene, methylbenzene, dimethylbenzene, trimethylbenzene, ethylbenzene, diethylbenzene (e.g., 1,4-diethylbenzene), triethylbenzene, propylbenzene, butylbenzene, isobutylbenzene, sec-butylbenzene, tert-butylbenzene, hexylbenzene, styrene, naphthalene, anthracene, phenanthrene, biphenyl, terphenyl, methylnaphthalene, benzalacetophenone, dimethylnaphthalene, methylanthracene, 4,4'-dimethylbiphenyl, bibenzyl, diphenylmethane, any isomer thereof, or any combination thereof, and the like.

[0036] As used herein, the term "amine" refers to a group of the formula -N(R a R b R c ), where each of R a , R b , and R c is independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl, or two of R a , R b , and R c are bonded to form a 3-membered to 6-membered cyclic ring. In some embodiments, when at least one of R a , R b , or R c is hydrogen, the amine is a group of the formula: -NH(R b R c)。In some embodiments, the term "amine" includes an amino group as defined herein. In some embodiments, the amine may comprise, consist of, or consist essentially of a primary amine, a secondary amine, a tertiary amine, or a quaternary amine. In some embodiments, the amine may comprise, consist of, or consist essentially of an alkylamine, a dialkylamine, or a trialkylamine. In some embodiments, the amine may comprise at least one of the following, consist of, consist essentially of, or be optionally selected from the group consisting of: methylamine, dimethylamine, ethylamine, diethylamine, isopropylamine, diisopropylamine, butylamine, sec-butylamine, tert-butylamine, di-sec-butylamine, isobutylamine, diisobutylamine, di-tert-pentylamine, ethylmethylamine, isopropyl-n-propylamine, or any combination thereof. Examples of the amine may include, but are not limited to, one or more of the following: primary amines such as, for example (and without limitation) methylamine, ethylamine, n-propylamine, isopropylamine, n-butylamine, sec-butylamine, isobutylamine, tert-butylamine, pentylamine, 2-aminopentane, 3-aminopentane, 1-amino-2-methylbutane, 2-amino-2-methylbutane, 3-amino-2-methylbutane, 4-amino-2-methylbutane, hexylamine, 5-amino-2-methylpentane, heptylamine, octylamine, nonylamine, decylamine, undecylamine, dodecylamine, tridecylamine, tetradecylamine, pentadecylamine, hexadecylamine, heptadecylamine, and octadecylamine; secondary amines such as, for example (and without limitation) dimethylamine, diethylamine, dipropylamine, diisopropylamine, dibutylamine, diisobutylamine, di-sec-butylamine, di-tert-butylamine, dipentylamine, dihexylamine, diheptylamine, dioctylamine, dinonylamine, didecylamine, methylethylamine, methylpropylamine, methylisopropylamine, methylbutylamine, methylisobutylamine, methylsec-butylamine, methyltert-butylamine, methylpentylamine, methylisopentylamine, ethylpropylamine, ethylisopropylamine, ethylbutylamine, ethylisobutylamine, ethylsec-butylamine, ethylamine, ethylisopentylamine, propylbutylamine, and propylisobutylamine; and tertiary amines such as, for example (and without limitation) trimethylamine, triethylamine, tripropylamine, tributylamine, tripentylamine, dimethylethylamine, methyldiethylamine, and methyldipropylamine. Examples of polyamines may include, but are not limited to, one or more of the following: ethylenediamine, propylenediamine, trimethylenediamine, tetramethylenediamine, 1,3-diaminobutane, 2,3-diaminobutane, pentamethylenediamine, 2,4-diaminopentane, hexamethylenediamine, heptamethylenediamine, octamethylenediamine, nonamethylenediamine, N-methylethylenediamine, N,N-dimethylethylenediamine, trimethylethylenediamine, N-ethylethylenediamine, N,N-diethylethylenediamine, triethylethylenediamine, 1,2,3-triaminopropane, hydrazine, tris(2-aminoethyl)amine, tetrakis(aminomethyl)methane, diethylenetriamine, triethylenetetramine, tetraethylenepentamine, heptaethylenooctamine, nonaethylenedecamine, and diazabicycloundecene. In some embodiments, the amine is substituted with one or more substituents.

[0037] In some embodiments, the polyamine compound comprises at least one of, consists of, consists essentially of, or is selected from the group consisting of: ethylenediamine, propylenediamine, trimethylenediamine, triethylenediamine, methylpentanediamine, tetramethylenediamine, 1,3-diaminobutane, 2,3-diaminobutane, pentamethylenediamine, 2,4-diaminopentane, hexamethylenediamine, heptamethylenediamine, octamethylenediamine, nonamethylenediamine, 1,2,3-triaminopropane, hydrazine, tetrakis(aminomethyl)methane, or any combination thereof. In some embodiments, the polyamine compound comprises at least one of, consists of, consists essentially of, or is selected from the group consisting of: N-methylethylenediamine, N,N-dimethylethylenediamine, trimethylethylenediamine, N-ethylethylenediamine, N,N-diethylethylenediamine, triethylethylenediamine, or any combination thereof. In some embodiments, the polyamine compound comprises at least one of, consists of, consists essentially of, or is selected from the group consisting of: tris(2-aminoethyl)amine, diethylenetriamine, triethylenetetramine, tetraethylenepentamine, heptaethyleneoctamine, nonaethylenedecamine, N',N'-bis(2-aminoethyl)ethane-1,2-diamine, or any combination thereof. In some embodiments, the polyamine compound comprises at least one of: 1,2-ethanediamine; 1,2-propanediamine; 1,3-propanediamine; 1,4-butanediamine; 1,6-hexanediamine; 2-methyl-1,5-pentanediamine; 2,2(4),4-trimethylhexanediamine; 2,2,4-trimethyl-1,6-hexanediamine; 2,4,4-trimethyl-1,6-hexanediamine; or any combination thereof.

[0038] As used herein, the term "silicon-containing film" refers to a film comprising at least one of: silicon, silicon nitride, silicon oxynitride, silicon oxide, silicon dioxide, silicon carbide, silicon carbonitride, silicon carbon oxynitride, carbon-doped silicon nitride, carbon-doped silicon oxide, carbon-doped silicon carbon oxynitride, or any combination thereof. For example, the silicon-containing film may comprise at least one of: SiO film, SiN film, SiOC film, SiCN film, SiOCN film, or any combination thereof. In some embodiments, the silicon-containing film has to a thickness of.

[0039] Some embodiments relate to silane precursors and related methods. At least some of these embodiments relate to silane precursors suitable for manufacturing microelectronic devices, including semiconductor devices and the like. For example, the silane precursors can be used to form silicon-containing films by one or more deposition processes. Examples of deposition processes include, but are not limited to, at least one of the following: chemical vapor deposition (CVD) processes, digital or pulsed chemical vapor deposition processes, plasma-enhanced cyclic chemical vapor deposition processes (PECCVD), flowable chemical vapor deposition processes (FCVD), atomic layer deposition (ALD) processes, thermal atomic layer deposition, plasma-enhanced atomic layer deposition (PEALD) processes, metalorganic chemical vapor deposition (MOCVD) processes, plasma-enhanced chemical vapor deposition (PECVD) processes, or any combination thereof.

[0040] Silane precursors suitable for thin film deposition are provided herein, such as, by way of example (and not limitation), amino-silane (Si-Si) derivatives. The silane precursors disclosed herein can exist in a liquid state at room temperature and atmospheric pressure. Relative to conventional precursors, the silane precursors disclosed herein can exhibit excellent volatility and enhanced reactivity. Thus, the silane precursors can exhibit improvement in the ease of forming thin films. In some embodiments, the amino-silane precursors contain Si-N bonds that exhibit excellent surface reactivity to facilitate enhanced surface cohesion. In some embodiments, the presence of multiple Si atoms results in an improved growth deposition rate compared to precursors having only a single Si atom. The silane precursors disclosed herein can be suitable for forming silicon-containing films at low temperatures, such as, by way of example (and not limitation), SiO, SiN, SiOC, SiCN, SiOCN, and the like.

[0041] Some embodiments relate to a silane precursor comprising a compound of the following formula:

[0042]

[0043] Wherein:

[0044] X is F, Cl, Br, or I;

[0045] R 1 and R 2 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl;

[0046] A is an amine;

[0047] Q is a bond or -SiR 3 R 4 -, where R 3 and R 4 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl. In some embodiments, R1 and R 2 are the same. In some embodiments, R 1 and R 2 are different. In some embodiments, R 3 and R 4 are the same. In some embodiments, R 3 and R 4 are different. In some embodiments, A is an amine. In some embodiments, the A is an amine of the following formula:

[0048]

[0049] Wherein:

[0050] R 5 and R 6 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl or benzyl; or R 5 and R 6 bond to obtain a 3 - membered to 6 - membered cyclic ring.

[0051] In some embodiments, R 5 and R 6 are the same. In some embodiments, R 5 and R 6 are different. Examples of silane precursors include (but are not limited to) compounds having at least one of the following structures:

[0052]

[0053]

[0054]

[0055]

[0056] Some embodiments relate to a silane precursor comprising a compound of the following formula:

[0057]

[0058] Wherein:

[0059] R 1 and R 2 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl or benzyl;

[0060] A is an amine;

[0061] Q is a bond or - SiR 3 R 4 -, wherein R 3 and R 4Each is independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl. In some embodiments, R 1 and R 2 are the same. In some embodiments, R 1 and R 2 are different. In some embodiments, R 3 and R 4 are the same. In some embodiments, R 3 and R 4 are different. In some embodiments, A is an amine. In some embodiments, the A is an amine of the following formula:

[0062]

[0063] wherein:

[0064] R 5 and R 6 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl; or

[0065] R 5 and R 6 bond to obtain a 3-membered to 6-membered cyclic ring.

[0066] In some embodiments, R 5 and R 6 are the same. In some embodiments, R 5 and R 6 are different.

[0067] In some embodiments, the precursor does not contain halides. For example, in some embodiments, the precursor does not contain at least one of F, Cl, Br, or I.

[0068] In some embodiments, the precursor is a liquid at a temperature of 20 °C to 30 °C. In some embodiments, the precursor is a liquid at atmospheric pressure.

[0069] Examples of silane precursors include (but are not limited to) compounds having at least one of the following structures:

[0070]

[0071]

[0072]

[0073]

[0074] Figure 1 is a flowchart of a method 100 for preparing a silane precursor according to some embodiments. AsFigure 1 As shown in Figure 1 , the method 100 for preparing a silane precursor may include one or more of the following steps: a step 102 of contacting a dihalosilane compound with an amine in a first solvent to obtain a first reaction product; and a step 104 of contacting the first reaction product with a reducing agent in a second solvent to obtain a second reaction product.

[0075] In step 102, in some embodiments, method 100 includes contacting a dihalosilane compound with an amine in a first solvent to obtain a first reaction product.

[0076] In some embodiments, the dihalosilane compound comprises a compound of the following formula:

[0077]

[0078] wherein:

[0079] X 1 and X 2 are each independently F, Cl, Br or I;

[0080] R 1 and R 2 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl or benzyl;

[0081] Q is a bond or -SiR 3 R 4 -,

[0082] wherein R 3 and R 4 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl or benzyl.

[0083] In some embodiments, X 1 and X 2 are the same. In some embodiments, X 1 and X 2 are different.

[0084] In some embodiments, R 1 and R 2 are the same. In some embodiments, R 1 and R 2 are different.

[0085] In some embodiments, R 3 and R 4 are the same. In some embodiments, R 3 and R 4 are different.

[0086] In some embodiments, the amine is a substituted amine. In some embodiments, the amine is a compound of the following formula:

[0087]

[0088] Wherein:

[0089] R 5 and R 6 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl or benzyl; or

[0090] R 5 and R 6 are bonded to obtain a 3 - to 6 - membered cyclic ring.

[0091] In some embodiments, R 5 and R 6 are the same. In some embodiments, R 5 and R 6 are different.

[0092] In some embodiments, the first solvent comprises at least one of the following: dichloromethane (CH 2 Cl 2 ), diethyl ether (Et 2 O), n - hexane, ethyl acetate (EtOAc), tetrahydrofuran (THF), or any combination thereof.

[0093] In some embodiments, the first reaction product comprises a compound of the following formula:

[0094]

[0095] Wherein:

[0096] X is F, Cl, Br or I;

[0097] R 1 and R 2 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl or benzyl;

[0098] A is an amine;

[0099] Q is a bond or - SiR 3 R 4 -,

[0100] wherein R 3 and R 4 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl or benzyl.

[0101] In some embodiments, R 1 and R 2 are the same. In some embodiments, R 1 and R 2 are different.

[0102] In some embodiments, R 3 and R 4 are the same. In some embodiments, R 3 and R 4 are different.

[0103] In some embodiments, A is an amine. In some embodiments, the A is an amine of the following formula:

[0104]

[0105] Wherein:

[0106] R 5 and R 6 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl or benzyl; or

[0107] R 5 and R 6 bond to obtain a 3-membered cyclic ring to a 6-membered cyclic ring.

[0108] In some embodiments, R 5 and R 6 are the same. In some embodiments, R 5 and R 6 are different.

[0109] In step 104, in some embodiments, method 100 includes contacting the first reaction product with a reducing agent in a second solvent to obtain a second reaction product.

[0110] In some embodiments, the reducing agent comprises at least one of the following: LiAlH 4 , NaAlH 4 , LiH, DiBAL, LiBH 4 , NaBH 4 , or any combination thereof.

[0111] In some embodiments, the second solvent comprises at least one of the following: dichloromethane (CH 2 Cl 2 ), diethyl ether (Et 2 O), n-hexane, ethyl acetate (EtOAc), tetrahydrofuran (THF), or any combination thereof.

[0112] In some embodiments, the second reaction product comprises a compound of the following formula:

[0113]

[0114] Wherein:

[0115] R1 and R 2 each independently is hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl or benzyl;

[0116] A is an amine;

[0117] Q is a bond or -SiR 3 R 4 -,

[0118] wherein R 3 and R 4 each independently is hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl or benzyl.

[0119] In some embodiments, R 1 and R 2 are the same. In some embodiments, R 1 and R 2 are different.

[0120] In some embodiments, R 3 and R 4 are the same. In some embodiments, R 3 and R 4 are different.

[0121] In some embodiments, A is an amine. In some embodiments, the A is an amine of the following formula:

[0122]

[0123] wherein:

[0124] R 5 and R 6 each independently is hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl or benzyl; or

[0125] R 5 and R 6 are connected to obtain a 3 - to 6 - membered cyclic ring.

[0126] In some embodiments, R 5 and R 6 are the same. In some embodiments, R 5 and R 6 are different.

[0127] In some embodiments, the method 100 for preparing the silane precursor proceeds according to the following reaction scheme:

[0128]

[0129] In some embodiments, the method 100 for preparing the silane precursor proceeds according to the following reaction scheme:

[0130]

[0131] In some embodiments, a method 100 for preparing a disalne precursor with oxygen proceeds according to the following reaction scheme, where R1 can be methyl, ethyl, or any alkyl group:

[0132]

[0133] Figure 2 is a flow chart of a method 200 for preparing a silicon-containing film according to some embodiments. As Figure 2 shown, the method 200 for preparing a silicon-containing film can include, consist of, or consist essentially of one or more of the following steps: obtaining 202 a precursor, obtaining 204 at least one co-reactant precursor, vaporizing 206 the precursor to obtain a vaporized precursor, vaporizing 208 the at least one co-reactant precursor to obtain at least one vaporized co-reactant precursor, and contacting 210 at least one of the vaporized precursor, the at least one vaporized co-reactant precursor, or any combination thereof with a substrate under chemical vapor deposition conditions to form a silicon-containing film on the substrate.

[0134] Step 202 can include obtaining, consisting of, or consisting essentially of a precursor. The precursor can include any one or more of the precursors disclosed herein, consist of, or consist essentially of the same. The obtaining can include obtaining a container or other vessel containing the precursor. In some embodiments, the precursor can be obtained in a container or other vessel to be vaporized.

[0135] Step 204 can include obtaining, consisting of, or consisting essentially of at least one co-reactant precursor. In some embodiments, the at least one co-reactant precursor includes, consists of, or consists essentially of at least one of the following: an oxidizing gas, a reducing gas, a hydrocarbon, or any combination thereof. The at least one co-reactant precursor can be selected to obtain a desired silicon-containing film. In some embodiments, the at least one co-reactant precursor can include, consist of, or consist essentially of at least one of the following: N 2 、H 2 、NH 3 、N 2 H 4 、CH 3 HNNH 2 、CH 3 HNNHCH 3 、NCH 3 H 2 、NCH 3 CH2 H 2 、 N(CH 3 ) 2 H, N(CH 3 CH 2 ) 2 H, N(CH 3 ) 3 、 N(CH 3 CH 2 ) 3 、 Si(CH 3 ) 2 NH, pyrazoline, pyridine, ethylenediamine, their radicals, or any combination thereof. In some embodiments, the at least one co-reactant precursor can comprise at least one of, consist of, or consist essentially of the following: H 2 、 O 2 、 O 3 、 H 2 O, H 2 O 2 、 NO, N 2 O, NO 2 、 CO, CO 2 、 carboxylic acid, alcohol, diol, their radicals, or any combination thereof. In some embodiments, the at least one co-reactant precursor comprises at least one of, consists of, or consists essentially of the following: methane, ethane, ethylene, acetylene, or any combination thereof. The obtaining can include obtaining a container or other vessel containing the at least one co-reactant precursor. In some embodiments, the at least one co-reactant precursor can be obtained in a container or other vessel to vaporize the at least one co-reactant precursor. In some embodiments, the method further includes an inert gas, such as at least one of the following: argon, helium, nitrogen, or any combination thereof.

[0136] Step 206 may include vaporizing a precursor to obtain a vaporized precursor, consisting of or consisting essentially of the same. The vaporizing may include heating the precursor to a temperature sufficient to obtain the vaporized precursor, consisting of or consisting essentially of the same. In some embodiments, the vaporizing may include heating a container containing the precursor, consisting of or consisting essentially of the same. In some embodiments, the vaporizing may include heating the precursor, consisting of or consisting essentially of the same, in a deposition chamber in which a chemical vapor deposition process is performed. In some embodiments, the vaporizing may include heating a conduit for delivering the precursor, the vaporized precursor, or any combination thereof to, for example, a deposition chamber, consisting of or consisting essentially of the same. In some embodiments, the vaporizing may include operating a vapor delivery system containing the precursor, consisting of or consisting essentially of the same. In some embodiments, the vaporizing may include heating to a temperature sufficient to vaporize the precursor to obtain the vaporized precursor, consisting of or consisting essentially of the same. In some embodiments, the vaporizing may include heating to a temperature below the decomposition temperature of at least one of the precursor, the vaporized precursor, or any combination thereof, consisting of or consisting essentially of the same. In some embodiments, the precursor may be present in the gas phase, in which case step 206 is optional and not required. For example, the precursor may include the vaporized precursor, consisting of or consisting essentially of the same.

[0137] Step 208 can include vaporizing at least one co-reactant precursor to obtain at least one vaporized co-reactant precursor, consisting of, or consisting essentially of the same. In some embodiments, the vaporizing can include heating the at least one co-reactant precursor to a temperature sufficient to obtain at least one vaporized co-reactant precursor, consisting of, or consisting essentially of the same. In some embodiments, the vaporizing can include heating a container containing the at least one co-reactant precursor, consisting of, or consisting essentially of the same. In some embodiments, the vaporizing can include heating the at least one co-reactant precursor, consisting of, or consisting essentially of the same, in a deposition chamber where a chemical vapor deposition process is being performed. In some embodiments, the vaporizing can include heating a conduit for delivering the at least one co-reactant precursor, the at least one vaporized co-reactant precursor, or any combination thereof, to, for example, a deposition chamber, consisting of, or consisting essentially of the same. In some embodiments, the vaporizing can include operating a vapor delivery system containing the at least one co-reactant precursor, consisting of, or consisting essentially of the same. In some embodiments, the vaporizing can include heating to a temperature sufficient to vaporize the at least one co-reactant precursor to obtain the at least one vaporized co-reactant precursor, consisting of, or consisting essentially of the same. In some embodiments, the vaporizing can include heating to a temperature below the decomposition temperature of at least one of the at least one co-reactant precursor, the at least one vaporized co-reactant precursor, or any combination thereof, consisting of, or consisting essentially of the same. In some embodiments, the at least one co-reactant precursor can be present in the gas phase, in which case step 108 is optional and not required. For example, the at least one co-reactant precursor can include the at least one vaporized co-reactant precursor, consisting of, or consisting essentially of the same.

[0138] Step 210 may include contacting at least one of the vaporized precursor, at least one vaporized co-reactant precursor, or any combination thereof with the substrate under vapor deposition conditions sufficient to form, consist of, or consist essentially of a silicon-containing film on the surface of the substrate. The contacting may be carried out in any system, apparatus, device, assembly, chamber thereof, or component thereof suitable for a vapor deposition process, such as including (but not limited to) a deposition chamber, etc. The vaporized precursor and at least one co-reactant precursor may contact the substrate simultaneously or at different times. For example, each of the vaporized precursor, the at least one vaporized co-reactant precursor, and the substrate may be present in the deposition chamber simultaneously. That is, in some embodiments, the contacting may include concurrent or simultaneous contact of the vaporized precursor and the at least one vaporized co-reactant precursor with the substrate. Alternatively, each of the vaporized precursor and the at least one vaporized co-reactant precursor may be present in the deposition chamber at different times. That is, in some embodiments, the contacting may include alternating and / or sequential contact of the vaporized precursor with the substrate and subsequent contact of the at least one vaporized co-reactant precursor with the substrate in one or more cycles.

[0139] The vapor deposition conditions may include conditions for a vapor deposition process. Examples of vapor deposition conditions include (but are not limited to) vapor deposition conditions for a vapor deposition process, where the vapor deposition process includes at least one of the following: chemical vapor deposition (CVD) process, digital or pulsed chemical vapor deposition process, plasma-enhanced cyclic chemical vapor deposition process (PECCVD), flowable chemical vapor deposition process (FCVD), atomic layer deposition (ALD) process, thermal atomic layer deposition, plasma-enhanced atomic layer deposition (PEALD) process, metalorganic chemical vapor deposition (MOCVD) process, plasma-enhanced chemical vapor deposition (PECVD) process, or any combination thereof.

[0140] The vapor deposition conditions can include, consist of, or consist essentially of the deposition temperature. The deposition temperature can be a temperature lower than the thermal decomposition temperature of at least one of the vaporized precursor, at least one vaporized co-reactant precursor, or any combination thereof. The deposition temperature can be high enough to reduce or avoid condensation of at least one of the vaporized precursor, the at least one vaporized co-reactant precursor, or any combination thereof. In some embodiments, the substrate can be heated to the deposition temperature. In some embodiments, the chamber or other container in which the substrate is contacted with the vaporized precursor and the at least one vaporized co-reactant precursor is heated to the deposition temperature. In some embodiments, at least one of the vaporized precursor, the at least one vaporized co-reactant precursor, or any combination thereof can be heated to the deposition temperature.

[0141] The deposition temperature can be a temperature from 200°C to 2500°C. In some embodiments, the deposition temperature can be a temperature from 500°C to 700°C. For example, in some embodiments, the deposition temperature can be the following temperatures: 500°C to 680°C, 500°C to 660°C, 500°C to 640°C, 500°C to 620°C, 500°C to 600°C, 500°C to 580°C, 500°C to 560°C, 500°C to 540°C, 500°C to 520°C, 520°C to 700°C, 540°C to 700°C, 560°C to 700°C, 580°C to 700°C, 600°C to 700°C, 620°C to 700°C, 640°C to 700°C, 660°C to 700°C, or 680°C to 700°C. In other embodiments, the deposition temperature can be a temperature greater than 200°C to 2500°C, such as, by way of example (and without limitation) the following temperatures: 400°C to 2000°C, 500°C to 2000°C, 550°C to 2400°C, 600°C to 2400°C, 625°C to 2400°C, 650°C to 2400°C, 675°C to 2400°C, 700°C to 2400°C, 725°C to 2400°C, 750°C to 2400°C, 775°C to 2400°C, 800°C to 2400°C, 825°C to 2400°C, 850°C to 2400°C, 875°C to 2400°C, 900°C to 2400°C, 925°C to 2400°C, 950°C to 2400°C, 975°C to 2400°C, 1000°C to 2400°C, 1025°C to 2400°C, 1050°C to 2400°C, 1075°C to 2400°C, 1100°C to 2400°C, 1200°C to 2400°C, 1300°C to 2400°C, 1400°C to 2400°C, 1500°C to 2400°C, 1600°C to 2400°C, 1700°C to 2400°C, 1800°C to 2400°C, 1900°C to 2400°C, 2000°C to 2400°C, 2100°C to 2400°C, 2200°C to 2400°C, 2300°C to 2400°C, 500°C to 2000°C, 500°C to 1900°C, 500°C to 1800°C, 500°C to 1700°C, 500°C to 1600°C, 500°C to 1500°C, 500°C to 1400°C, 500°C to 1300°C, 500°C to 1200°C, 500°C to 1100°C, 500°C to 1000°C, 500°C to 1000°C, 500°C to 900°C, or 500°C to 800°C.

[0142] The vapor deposition conditions can include, consist of, or consist essentially of the deposition pressure. In some embodiments, the deposition pressure can include, consist of, or consist essentially of the vapor pressure of the vaporized precursor, at least one vaporized co-reactant precursor, or any combination thereof. In some embodiments, the deposition pressure can include, consist of, or consist essentially of the chamber pressure.

[0143] The deposition pressure can be a pressure from 0.001 Torr to 100 Torr. For example, in some embodiments, the deposition pressure can be a pressure such as: from 1 Torr to 30 Torr, from 1 Torr to 25 Torr, from 1 Torr to 20 Torr, from 1 Torr to 15 Torr, from 1 Torr to 10 Torr, from 5 Torr to 50 Torr, from 5 Torr to 40 Torr, from 5 Torr to 30 Torr, from 5 Torr to 20 Torr, or from 5 Torr to 15 Torr. In other embodiments, the deposition pressure can be a pressure such as: from 1 Torr to 100 Torr, from 5 Torr to 100 Torr, from 10 Torr to 100 Torr, from 15 Torr to 100 Torr, from 20 Torr to 100 Torr, from 25 Torr to 100 Torr, from 30 Torr to 100 Torr, from 35 Torr to 100 Torr, from 40 Torr to 100 Torr, from 45 Torr to 100 Torr, from 50 Torr to 100 Torr, from 55 Torr to 100 Torr, from 60 Torr to 100 Torr, from 65 Torr to 100 Torr, from 70 Torr to 100 Torr, from 75 Torr to 100 Torr, from 80 Torr to 100 Torr, from 85 Torr to 100 Torr, from 90 Torr to 100 Torr, from 95 Torr to 100 Torr, from 1 Torr to 95 Torr, from 1 Torr to 90 Torr, from 1 Torr to 85 Torr, from 1 Torr to 80 Torr, from 1 Torr to 75 Torr, or from 1 Torr to 70 Torr. In still other embodiments, the deposition pressure can be a pressure such as: from 1 mTorr to 100 mTorr, from 1 mTorr to 90 mTorr, from 1 mTorr to 80 mTorr, from 1 mTorr to 70 mTorr, from 1 mTorr to 60 mTorr, from 1 mTorr to 50 mTorr, from 1 mTorr to 40 mTorr, from 1 mTorr to 30 mTorr, from 1 mTorr to 20 mTorr, from 1 mTorr to 10 mTorr, from 100 mTorr to 300 mTorr, from 150 mTorr to 300 mTorr, from 200 mTorr to 300 mTorr, or from 150 mTorr to 250 mTorr or from 150 mTorr to 225 mTorr.

[0144] The substrate can include, consist of, or consist essentially of at least one of the following: Si, Co, Cu, Al, W, WN, WC, TiN, Mo, MoC, SiO 2 、W, SiN, WCN, Al 2 O 3 、AlN, ZrO 2 、La 2 O 3 、TaN, RuO 2 、IrO 2 、Nb 2 O 3 、Y 2 O 3, hafnium oxide, or any combination thereof. In some embodiments, the silicon-containing film may comprise at least one of, consist of, or consist essentially of: silicon, silicon nitride, silicon oxynitride, silicon oxide, silicon dioxide, silicon carbide, silicon carbonitride, silicon carbon oxynitride, carbon-doped silicon nitride, carbon-doped silicon oxide, carbon-doped silicon carbon oxynitride, or any combination thereof. In some embodiments, the substrate may comprise other silicon-based substrates, such as, for example, one or more of a polysilicon substrate, a metal substrate, and a dielectric substrate.

[0145] Figure 3 is a schematic diagram of a silicon-containing film 304 on the surface of a substrate 302 according to some embodiments. In some embodiments, the silicon-containing film 304 comprises any film formed according to the methods disclosed herein. In some embodiments, the silicon-containing film 304 comprises any film prepared from the precursors disclosed herein.

[0146] Example 1

[0147]

[0148] To a flame-dried flask containing n-hexane (1.2 L), 1,2-dichloro-1,1,2,2-tetramethyldisilane (DCTMDS, 70 g, 0.374 mol) was added. N-Ethyl-N-methylamine (EMA, 46.4 g, 0.785 mol) was subsequently added dropwise over 1 h (maintaining the internal temperature below 30 °C). The reaction mixture was stirred at room temperature under a N 2 atmosphere for 20 h. Once the reaction was complete, the white precipitate formed from the reaction was filtered through a pad of diatomaceous earth with n-hexane. The filtrate was concentrated at 50 °C and 150 Torr.

[0149] The residue (N-ethyl-N-methyl(2-chloro-1,1,2,2-tetramethyldisilyl)amine) was dissolved in Et 2 O (0.8 L). A 1 M solution of LAH in diethyl ether (195 ml, 0.195 mol) was added to the mixture at 0 °C. The reaction was stirred at room temperature for 20 h. The reaction mixture was filtered through a pad of diatomaceous earth, and the filtrate was concentrated at 40 °C and 200 Torr. The final product (N-ethyl-N-methyl(1,1,2,2-tetramethyldisilyl)amine) was purified by fractional distillation (41 °C and 3 Torr) to give a colorless liquid (30 g, 45.7% yield).

[0150] N-ethyl-N-methyl(1,1,2,2-tetramethyldisilyl)amine. 1 H NMR (CDCl 3, Althaea rosea - 1): δ 3.63 - 3.67 (m, 1H), δ 2.78 (q, J = 0.01 Hz, 2H), 2.46 (s, 3H), δ 1.01 (t, J = 0.01 Hz, 3H), 0.15 (s, 6H), 0.13 (d, J = 0.009 Hz, 6H) ppm.

[0151] N - ethyl - N - methyl(2 - chloro - 1,1,2,2 - tetramethyldisilazane). 1 H NMR(CDCl 3 , Compound - 2): δ 2.78 (q, J = 0.014 Hz, 2H), 2.48 (s, 3H), δ 1.01 (t, J = 0.014 Hz, 3H), 0.47 (s, 6H), 0.23 (s, 6H) ppm.

[0152] Regarding Example 1, Example 2 is shown below. Using the final product (N - ethyl - N - methyl(1,1,2,2 - tetramethyldisilazane)), a new final product, 1 - methoxy - 1,1,2,2 - tetramethyldisilane, is prepared by the following synthetic method below.

[0153] Example 2

[0154]

[0155] Where A is an amine and R1 is methyl, ethyl or any alkyl group. Example 2 shows a procedure where MeOH (methanol) (9.68 g, 0.30 mol) is added to (N - ethyl - N - methyl(1,1,2,2 - tetramethyldisilazane)) (26.5 g, 0.15 mol) in DCM (dichloromethane) at 30 °C. Once injected, some heat is generated in the reactor and some condensation occurs on the inner surface of the flask, without salting out. After stirring overnight at room temperature, the conversion of the reaction is determined by GC - FID analysis of the reaction mixture, and the GC - FID profile is almost 97%, with one peak having less than 3% impurities. Volatiles are removed in a distillation system at 500 Torr and an internal temperature of 60 °C. The crude product is distilled at 40 - 50 Torr and 40 - 43 °C to obtain 9.2 g of the target product in 41% yield. The target product is confirmed by 1H NMR spectroscopy.

[0156] In some embodiments, the final product can have less than 3% impurities, in other products it can be less than 2%, in others less than 1% or even lower, depending on the distiller used for these disilane precursors.

[0157] Figure 4 is according to some embodiments, of N - ethyl - N - methyl(1,1,2,2 - tetramethyldisilazane) 11H NMR spectrum.

[0158] Aspect

[0159] Various aspects are described below. It should be understood that any one or more of the features recited in the following aspects may be combined with any one or more other aspects.

[0160] Aspect 1. A precursor, comprising:

[0161] A compound of the formula:

[0162]

[0163] Wherein:

[0164] X is F, Cl, Br or I;

[0165] R 1 and R 2 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl or benzyl;

[0166] A is an amine;

[0167] Q is a bond or -SiR 3 R 4 -

[0168] where R 3 and R 4 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl or benzyl.

[0169] Aspect 2. The precursor according to Aspect 1, wherein the alkyl is C 1 -C 4 alkyl.

[0170] Aspect 3. The precursor according to any one of Aspects 1 to 2, wherein the alkyl is C 1 -C 4 linear alkyl.

[0171] Aspect 4. The precursor according to any one of Aspects 1 to 3, wherein the alkyl is C 3 -C 4 branched-chain alkyl.

[0172] Aspect 5. The precursor according to any one of Aspects 1 to 4, wherein the cycloalkyl is C 3 -C 6 cycloalkyl.

[0173] Aspect 6. The precursor according to any one of Aspects 1 to 5, wherein the amine is a secondary amine.

[0174] Aspect 7. The precursor according to any one of Aspects 1 to 6, wherein A is:

[0175]

[0176] Wherein:

[0177] R 5 and R 6 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl or benzyl; or

[0178] R 5 and R 6 bond to form a 3 - to 6 - membered cyclic ring.

[0179] Aspect 8. A precursor comprising:

[0180] A compound of the formula:

[0181]

[0182] Wherein:

[0183] R 1 and R 2 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl or benzyl;

[0184] A is an amine;

[0185] Q is a bond or -SiR 3 R 4 -

[0186] wherein R 3 and R 4 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl or benzyl.

[0187] Aspect 9. The precursor according to Aspect 8, wherein the alkyl is C 1 -C 4 alkyl.

[0188] Aspect 10. The precursor according to any one of Aspects 8 to 9, wherein the alkyl is C 1 -C 4 linear alkyl.

[0189] Aspect 11. The precursor according to any one of Aspects 8 to 10, wherein the alkyl is C 3 -C 4 branched - chain alkyl.

[0190] Aspect 12. The precursor according to any one of Aspects 8 to 11, wherein the cycloalkyl is C 3 -C 6Naphthenyl.

[0191] Aspect 13. The precursor according to any one of aspects 8 to 12, wherein the amine is a secondary amine.

[0192] Aspect 14. The precursor according to any one of aspects 8 to 13, wherein A is:

[0193]

[0194] Wherein:

[0195] R 5 and R 6 are each independently hydrogen, alkyl, alkenyl, alkynyl, naphthenyl, aryl or benzyl; or

[0196] R 5 and R 6 bond to obtain a 3-membered to 6-membered cyclic ring.

[0197] Aspect 15. The precursor according to any one of aspects 8 to 14, wherein the precursor does not contain halides.

[0198] Aspect 16. The precursor according to any one of aspects 8 to 15, wherein the precursor is a liquid at 20 °C to 30 °C and at atmospheric pressure.

[0199] Aspect 17. A method for forming a precursor, the method comprising:

[0200] Contacting a dihalosilane compound with an amine in a first solvent to obtain a first reaction product,

[0201] Contacting the first reaction product with a reducing agent in a second solvent to obtain a second reaction product.

[0202] Aspect 18. The method according to aspect 17, wherein the dihalosilane compound comprises a compound of the following formula:

[0203]

[0204] Wherein:

[0205] X 1 and X 2 are each independently F, Cl, Br or I;

[0206] R 1 and R 2 are each independently hydrogen, alkyl, alkenyl, alkynyl, naphthenyl, aryl or benzyl;

[0207] Q is a bond or -SiR 3 R 4 -,

[0208] wherein R 3 and R 4 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl or benzyl.

[0209] Aspect 19. The method according to any one of aspects 17 to 18, wherein the amine comprises a compound of the following formula:

[0210]

[0211] wherein:

[0212] R 5 and R 6 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl or benzyl; or

[0213] R 5 and R 6 are bonded to obtain a 3-membered to 6-membered cyclic ring.

[0214] Aspect 20. The method according to any one of aspects 17 to 19, wherein the first solvent comprises at least one of the following: dichloromethane (CH 2 Cl 2 ), diethyl ether (Et 2 O), n-hexane, ethyl acetate (EtOAc), tetrahydrofuran (THF), or any combination thereof.

[0215] Aspect 21. The method according to any one of aspects 17 to 20, wherein the first reaction product comprises a compound of the following formula:

[0216]

[0217] wherein:

[0218] X is F, Cl, Br or I;

[0219] R 1 and R 2 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl or benzyl;

[0220] A is an amine;

[0221] Q is a bond or -SiR 3 R 4 -,

[0222] wherein R 3 and R 4 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl or benzyl.

[0223] Aspect 22. The method according to aspect 21, wherein A is:

[0224]

[0225] Wherein:

[0226] R 5 and R 6 are each independently hydrogen, alkyl, cycloalkyl, aryl or benzyl; or

[0227] R 5 and R 6 are bonded to obtain a 3-membered to 6-membered cyclic ring.

[0228] Aspect 23. The method according to any one of aspects 17 to 22, wherein the reducing agent comprises at least one of the following: LiAlH 4 , NaAlH 4 , LiH, DiBAL, LiBH 4 , NaBH 4 , or any combination thereof.

[0229] Aspect 24. The method according to any one of aspects 17 to 23, wherein the second solvent comprises at least one of the following: dichloromethane (CH 2 Cl 2 ), diethyl ether (Et 2 O), n-hexane, ethyl acetate (EtOAc), tetrahydrofuran (THF), or any combination thereof.

[0230] Aspect 25. The method according to any one of aspects 17 to 24, wherein the second reaction product comprises a compound of the following formula:

[0231]

[0232] Wherein:

[0233] R 1 and R 2 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl or benzyl;

[0234] A is an amine;

[0235] Q is a bond or -SiR 3 R 4 -,

[0236] Wherein R 3 and R 4 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl or benzyl.

[0237] Aspect 26. The method according to any one of aspects 17 to 25, wherein A is an amine of the following formula:

[0238]

[0239] wherein:

[0240] R 5 and R 6 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl or benzyl; or

[0241] R 5 and R 6 are linked to obtain a 3 - to 6 - membered cyclic ring.

[0242] Aspect 27. A method of chemical vapor deposition, comprising:

[0243] obtaining a precursor according to any one of aspects 1 to 16;

[0244] vaporizing the precursor to obtain a vaporized precursor; and

[0245] contacting the vaporized precursor with a substrate under chemical vapor deposition conditions to form a silicon - containing film on the substrate.

[0246] Aspect 28. The method according to aspect 27, wherein the chemical vapor deposition conditions include atomic layer deposition conditions.

[0247] Aspect 29. The method according to any one of aspects 27 to 28, wherein the chemical vapor deposition conditions include chemical vapor deposition conditions.

[0248] Aspect 30. The method according to any one of aspects 27 to 29, wherein the silicon - containing film comprises at least one of the following: SiO, SiN, SiOC, SiCN, SiOCN, or any combination thereof.

[0249] It should be understood that detailed changes can be made, particularly with regard to the construction materials employed and the shape, size and arrangement of the parts, without departing from the scope of the present disclosure. The present specification and examples described herein are illustrative, and the true scope and spirit of the present disclosure are indicated by the following appended claims.

Claims

1. A precursor, comprising: A compound of the following formula: Wherein: X is F, Cl, Br or I; R 1 and R 2 each independently is hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl or benzyl; A is an amine; Q is a bond or -SiR 3 R 4 -, wherein R 3 and R 4 each independently is hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl or benzyl.

2. The precursor according to claim 1, wherein the alkyl group is C 1 -C 4 alkyl group.

3. The precursor according to claim 1, wherein the alkyl group is C 1 -C 4 a straight-chain alkyl group.

4. The precursor according to claim 1, wherein the cycloalkyl group is C 3 -C 4 branched-chain alkyl group.

5. The precursor according to claim 1, wherein the cycloalkyl group is C 3 -C 6 cycloalkyl group.

6. The precursor according to claim 1, wherein the amine is a secondary amine.

7. The precursor according to claim 1, wherein the A is: Wherein: R 5 and R 6 each independently is hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl or benzyl; or R 5 and R 6 are bonded to obtain a 3-membered cyclic ring to a 6-membered cyclic ring.

8. A precursor, comprising: A compound of the following formula: Wherein: R 1 and R 2 each independently is hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl or benzyl; A is an amine; Q is a bond or -SiR 3 R 4 -, wherein R 3 and R 4 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl or benzyl.

9. The precursor according to claim 8, wherein the alkyl group is C 1 -C 4 alkyl group.

10. The precursor according to claim 8, wherein the alkyl group is C 1 -C 4 a straight-chain alkyl group.

11. The precursor according to claim 8, wherein the alkyl group is C 3 -C 4 branched-chain alkyl group.

12. The precursor according to claim 8, wherein the cycloalkyl group is C 3 -C 6 cycloalkyl group.

13. The precursor according to claim 8, wherein the amine is a secondary amine.

14. The precursor according to claim 8, wherein the A is: Wherein: R 5 and R 6 each independently is hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl or benzyl; or R 5 and R 6 are bonded to obtain a 3-membered ring to a 6-membered ring.

15. The precursor according to claim 8, wherein the precursor does not contain a halide.

16. The precursor according to claim 8, wherein the precursor is a liquid at 20 °C to 30 °C and at atmospheric pressure.

17. A method for forming a precursor, the method comprising: Contacting a dihalosilane compound with an amine in a first solvent to obtain a first reaction product, Contacting the first reaction product with a reducing agent in a second solvent to obtain a second reaction product.

18. The method according to claim 17, wherein the dihalosilane compound comprises a compound of the following formula: Wherein: X 1 and X 2 each independently is F, Cl, Br or I; R 1 and R 2 each independently is hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl or benzyl; Q is a bond or -SiR 3 R 4 -, wherein R 3 and R 4 each independently is hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl or benzyl.

19. The method according to claim 17, wherein the amine comprises a compound of the following formula: Wherein: R 5 and R 6 each independently is hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl or benzyl; or R 5 and R 6 are bonded to obtain a 3-membered ring to a 6-membered ring.

20. The method according to claim 17, wherein the first solvent comprises at least one of the following: dichloromethane (CH 2 Cl 2 ), diethyl ether (Et 2 O), n-hexane, ethyl acetate (EtOAc), tetrahydrofuran (THF), or any combination thereof.

21. The method according to claim 17, wherein the first reaction product comprises a compound of the following formula: Wherein: X is F, Cl, Br or I; R 1 and R 2 each independently is hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl or benzyl; A is an amine; Q is a bond or —SiR 3 R 4 —, wherein R 3 and R 4 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl or benzyl.

22. The method according to claim 21, wherein A is: Wherein: R 5 and R 6 each independently is hydrogen, alkyl, cycloalkyl, aryl or benzyl; or R 5 and R 6 are bonded to obtain a 3-membered ring to a 6-membered ring.

23. The method according to claim 17, wherein the reducing agent comprises at least one of the following: LiAlH 4 , NaAlH 4 , LiH, DiBAL, LiBH 4 , NaBH 4 , or any combination thereof.

24. The method according to claim 17, wherein the second solvent comprises at least one of the following: dichloromethane (CH 2 Cl 2 ), diethyl ether (Et 2 O), n-hexane, ethyl acetate (EtOAc), tetrahydrofuran (THF), or any combination thereof.

25. The method according to claim 17, wherein the second reaction product comprises a compound of the following formula: Wherein: R 1 and R 2 each independently is hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl or benzyl; A is an amine; Q is a key or —SiR 3 R 4 —, wherein R 3 and R 4 each independently is hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl or benzyl.

26. The method according to claim 17, wherein A is an amine of the following formula: Wherein: R 5 and R 6 each independently is hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl or benzyl; or R 5 and R 6 are connected to obtain a 3 - to 6 - membered cyclic ring.

27. A method of chemical vapor deposition, which comprises: Obtaining a precursor according to any one of claims 1 to 16; Vaporizing the precursor to obtain a vaporized precursor; and Contacting the vaporized precursor with a substrate under chemical vapor deposition conditions to form a silicon-containing film on the substrate.

28. The method according to claim 27, wherein the chemical vapor deposition conditions include atomic layer deposition conditions.

29. The method according to claim 27, wherein the chemical vapor deposition conditions include chemical vapor deposition conditions.

30. The method according to claim 27, wherein the silicon-containing film comprises at least one of the following: SiO, SiN, SiOC, SiCN, SiOCN, or any combination thereof.

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