Benzyl compound passivation for selective deposition and selective etch protection

Abstract

A method includes forming a first layer and a second layer on a substrate, forming a passivation layer on a surface of the first layer without forming a passivation layer on a surface of the second layer by exposing the first layer and the second layer to a benzyl compound, and after forming the passivation layer on the first layer, performing at least one of depositing a third layer on the second layer, or etching the second layer.

Description

Technical Field

[0001] Embodiments of the present disclosure generally relate to the manufacture of electronic components. In particular, embodiments of the present disclosure relate to the passivation of benzyl compounds for selective deposition and selective etching protection. Background Art

[0002] An electronic component manufacturing apparatus may include a plurality of chambers, such as a processing chamber and a load lock chamber. Such an electronic component manufacturing apparatus may employ a robotic device in a transfer chamber that is configured to transfer substrates between the plurality of chambers. In some cases, a plurality of substrates are transferred together. The processing chamber may be used in the electronic component manufacturing apparatus to perform one or more processes on a substrate, such as a deposition process and an etching process. For many processes, gases flow into the processing chamber. Electronic components, such as semiconductor components, are manufactured by performing a series of operations that may include deposition, oxidation, lithography, ion implantation, etching, etc. to form a number of patterned layers. Summary of the Invention

[0003] According to one embodiment, a method is provided. The method includes forming a first layer and a second layer on a substrate, forming a passivation layer on a surface of the first layer by exposing the first layer and the second layer to a benzyl compound, without forming a passivation layer on a surface of the second layer, and after forming the passivation layer on the first layer, performing at least one of the following: depositing a third layer on the second layer, or etching the second layer.

[0004] According to one embodiment, a system including at least one chamber is provided. The at least one chamber is configured to form a passivation layer on a surface of the first layer by exposing the first layer and the second layer to a benzyl compound, without forming a passivation layer on a surface of the second layer. The first layer and the second layer are formed on a substrate. The at least one chamber is further configured to, after forming the passivation layer, perform at least one of the following: depositing a third layer on the second layer using a deposition process, or etching the second layer. Brief Description of the Drawings

[0005] The present disclosure is illustrated by way of example and not limitation in the figures, in which like reference numerals indicate similar elements. It should be noted that different references to "one" or "an" embodiment in the present disclosure are not necessarily references to the same embodiment, and such references mean at least one.

[0006] Figure 1 is a flow chart of an example method for implementing passivation of benzyl compounds for selective deposition and selective etching protection according to some embodiments.

[0007] Figure 2FIG. 0 is a block diagram of an exemplary electronic component processing system according to some embodiments, which can be used to implement passivation of a protecting benzyl compound for selective deposition and selective etching.

[0008] Figures 3A - 3D FIG. 4 is a cross-sectional view of an exemplary fabrication of an element implementing passivation of a protecting benzyl compound for selective deposition and selective etching according to some embodiments. DETAILED DESCRIPTION

[0009] The embodiments described herein relate to passivation of a protecting benzyl compound for selective deposition and selective etching. Electronic components can include many different types of layers. For example, an electronic component can include a dielectric layer formed of a dielectric material, a conductive layer formed of a conductive material, and a semiconductor layer formed of a semiconductor material. Electronic component processing techniques can involve performing patterning (e.g., lithography) to create structures (e.g., trenches for conductive lines and / or holes for vias). For example, patterning can include processes of repeatedly depositing and etching, such as wet etching or dry etching (e.g., plasma etching) using a photomask ("mask") and a resist film.

[0010] Some electronic components can include a first layer and a second layer each disposed on a substrate, and possibly additional layers. For example, the first layer can be disposed adjacent to the second layer. In an embodiment, the first layer and the second layer can each be an exposed layer. The first layer can include a first material, and the second layer can include a second material different from the first material. During the fabrication of an electronic component, there may be a situation where a third layer should be selectively deposited on the second layer (i.e., not on the first layer) prior to the first layer. That is, it is not desired to form a material on the first layer. Or, during the fabrication of an electronic component, there may be a situation where the second layer should be selectively etched prior to the first layer. That is, it is not desired to etch the first layer. However, as electronic component sizes become smaller (e.g., at the nanoscale), it becomes more difficult to enable selective deposition of a material on the second layer and / or selective etching of the second layer relative to the first layer.

[0011] To address these and other drawbacks, the embodiments described herein enable passivation of a protecting benzyl compound for selective deposition and selective etching. More specifically, the first layer and the second layer can be disposed on a substrate (e.g., the first layer can be adjacent to the second layer). The first layer can include a material that, when exposed to a suitable passivating agent, can form a passivation layer on the surface of the first layer. The second layer can be formed of a material that does not form a passivation layer when exposed to the same passivating agent.

[0012] For example, the passivating agent may include a benzyl compound. In some embodiments, the benzyl compound includes benzyl alcohol. Benzyl alcohol is an aromatic alcohol molecule that may include a benzyl group (C 6 H 5 CH 2 - ) attached to a hydroxyl functional group (-OH). More specifically, the benzyl group can be formed by attaching a benzene ring (C 6 H 6 ) to a CH 2 group. Thus, benzyl alcohol can be represented by the formula C 6 H 5 CH 2 OH, C 7 H 8 O or BnOH, where "Bn" refers to the benzyl group. In some embodiments, the benzyl compound includes benzyl alcohol derivatives. More specifically, the benzyl alcohol derivative can be in the form of RC 6 H 4 CH 2 OH. For example, R = C 1 to C 10 .

[0013] In some embodiments, the benzyl compound includes benzyl halides. Benzyl halides are halocarbons (e.g., organofluorine compounds, organochlorine compounds, organobromine compounds, or organoiodine compounds) that may include a benzyl group (C 6 H 5 CH 2 - ) attached to a halogen. For example, the benzyl compound can be benzyl chloride, which is an organochlorine compound that may include a benzyl group attached to chlorine (-Cl). In some embodiments, the benzyl compound includes benzyl halide derivatives (e.g., benzyl chloride derivatives). More specifically, the benzyl halide derivative can be in the form of RC 6 H 4 CH 2 . For example, R = C 1 to C 10 .

[0014] The first layer and the second layer can each include respective materials such that during the exposure of the benzyl compound, the surface of the first layer can cause catalytic polymerization of the benzyl compound, while the surface of the second layer does not cause catalytic polymerization of the benzyl compound. That is, the polymerization of the benzyl compound is highly selective with respect to the surface of the first layer.

[0015] For example, the first layer may include a dielectric material. In some embodiments, the first layer includes a native oxide formed on a conductive material. For example, the first layer may be a metal oxide (e.g., a transition metal oxide) formed from a metal (e.g., a transition metal). Examples of suitable dielectric materials that may form the first layer include tungsten oxides (e.g., WO 2 、WO 3 、W 2 O 3 or W 2 O 5 ), molybdenum oxides (e.g., MoO 2 or MoO 3 ), manganese oxides (e.g., MnO, MnO 2 、MnO 3 、Mn 2 O 3 、Mn 3 O 4 、Mn 2 O 7 、Mn 5 O 8 、Mn 7 O 12 or Mn 7 O 13 ), nickel oxides (e.g., NiO or Ni 2 O 3 ), nickelates, and the like.

[0016] In some embodiments, the second layer includes a dielectric material. For example, the second layer may include an oxide. Illustratively, the oxide may be silicon oxide or a metal oxide (e.g., a transition metal oxide). For example, the metal oxide may be different from the metal oxide used to form the first layer. As another example, the second layer may include a nitride. Illustratively, the nitride may be silicon nitride or a metal nitride (e.g., a transition metal nitride). Examples of suitable dielectric materials that may be used to form the second layer include silicon dioxide (SiO 2 ), carbon-doped silicon oxide (e.g., SiOC, SiCOH), silicon nitride (Si 3 N 4 ), aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), and the like. In some embodiments, the second layer includes a conductive material. For example, the second layer may include a metal. Illustratively, the conductive material may include cobalt (Co), copper (Cu), silver (Ag), tungsten (W), molybdenum (Mo), and the like.

[0017] A passivation layer including a polymer adsorbed to the surface of the first layer is formed by catalytic polymerization of a benzyl compound of the first layer. In some embodiments, the passivation layer includes poly(phenylene methylene) (PPM). PPM is a hydrocarbon polymer including a number of monomers, where each monomer includes a phenylene unit (C 6 H 4 -) and a methylene unit (-CH 2 ). Thus, PPM can be represented by the formula (C 6 H 4 [CH 2 )([[]] n n ). Polymerization of the benzyl compound into PPM can include converting residues of the benzyl compound into dibenzyl ether (C 6 H 5 CH 2 ), which can then be polymerized into PPM. 2 In some embodiments, passivation is performed in situ. In some embodiments, passivation is performed ex situ. The process of forming the passivation layer can include performing a plurality of cycles. Each cycle can include steps of pulsing the benzyl compound, performing an immersion, and performing a purge. Each step of the cycle can be performed using any suitable process parameters. The process parameters can control the thickness of the passivation layer. Examples of process parameters for performing passivation include temperature, pressure, number of cycles, pulse time (i.e., the time length of each monomer), purge time (i.e., the time length of introducing a purge gas between pulses), etc. Further details regarding forming the passivation layer will be described below with reference to

[0018] Figure 1 Figure 1 .

[0019] In some embodiments, a cleaning process (i.e., pre-cleaning) is performed before passivating the conductive material. The pre-cleaning process can be performed as appropriate to improve the selectivity of the passivation layer on the surface of the first layer and / or to reduce the deposition of the passivation layer on the surface of the second layer. For example, the pre-cleaning process can remove contaminants from the surface of the first layer and / or can reduce defect growth on the conductive material. For example, the pre-cleaning process can include heat and moisture treatment, hydrogen treatment, steam treatment, oxygen dosing treatment, etc. More details regarding the pre-cleaning process will be described below with reference to Figure 1 .

[0020] After passivation (and optionally pre-cleaning before passivation), at least one processing step can be performed. More specifically, the passivation layer can be used as a barrier layer during at least one processing step.

[0021] In some embodiments, the at least one processing step includes depositing a third layer on the surface of the second layer. More specifically, the passivation layer prevents (e.g., blocks) the adsorption of deposition precursors during a subsequent deposition process to form the third layer (i.e., prevents the nucleation of deposition precursors), such that the third layer is selectively deposited on the surface of the second layer preferentially over the passivation layer. This can prevent (e.g., inhibit) the formation of the third layer on the passivation layer. The third layer can be deposited on the surface of the second layer to a target thickness (e.g., by performing an appropriate number of deposition cycles).

[0022] The third layer can include any suitable material. In some embodiments, the third layer includes a dielectric material. The third layer can include any suitable dielectric material. In some embodiments, the third layer includes a nitride (e.g., a metal nitride). Examples of suitable nitrides that can be used to form the third layer include tantalum nitride (TaN), titanium nitride (TiN), molybdenum nitride (MoN), tungsten nitride (e.g., WN, W 2 N, WN 2 ), manganese nitride (MnN, Mn 3 N 2 ), etc. In some embodiments, the third layer includes an oxide. Examples of suitable oxides that can be used to form the third layer include Al 2 O 3 , SiO 2 , hafnium dioxide (HfO 2 ), titanium dioxide (TiO 2 ), zirconium dioxide (ZrO 2 ), vanadium oxides (e.g., VO, VO 2 , V 2 O 3 , V 2 O 5 ), niobium oxides (e.g., NbO, NbO 2 , Nb 2 O 5 ), tantalum pentoxide (Ta 2 O 5 ), tungsten oxides (e.g., WO 2 , WO 3 , W 2 O 3 , W 2 O 5 ), molybdenum oxides (e.g., MoO 2 , MoO 3 ), etc. In some embodiments, the third layer includes a conductive material. The third layer can include any suitable conductive material. Examples of suitable conductive materials include cobalt (Co), copper (Cu), silver (Ag), tungsten (W), molybdenum (Mo), etc.

[0023] The deposition process can be any suitable deposition process. In some embodiments, the deposition process is an ALD process. In some embodiments, the deposition process is a chemical vapor deposition (CVD) process. The deposition process can utilize any suitable deposition precursors and any suitable process parameters. For example, if the third layer comprises a metal oxide, the deposition process can utilize a metal oxide precursor (e.g., a metal alkoxide precursor). As another example, if the third layer comprises a conductive material (e.g., a metal), the deposition process can utilize a conductive material precursor (e.g., a metal precursor). The process parameters of the deposition process (e.g., a CVD process or a thermal ALD process) can depend on the deposition precursor used to form the second layer and the target thickness of the resulting second layer.

[0024] In some embodiments, the at least one processing step comprises etching the second layer. The passivation layer can perform selective etching protection on the surface of the first layer during the etching of the second layer. More specifically, the passivation layer can resist a particular etching chemical used to etch the second layer. For example, if the etching process is a dry etching process, the etching chemical can comprise nitrogen trifluoride (NF 3 ) gas to produce NF 3 plasma. Further details regarding benzyl compound passivation for selective deposition and selective etching protection will be described below with reference to Figure 1 Description.

[0025] Figure 1 An example method 100 for implementing benzyl compound passivation for selective deposition and selective etching protection is described according to some embodiments. Method 100 can be performed within an electronic component processing system. More specifically, method 100 can be performed within one or more processing chambers of an electronic component processing system. Further details regarding the electronic component processing system will be described below with reference to Figure 2 Description.

[0026] In step 110, a base structure of an element comprising a first layer and a second layer is formed. The first layer can comprise a first material, and the second layer can comprise a second material different from the first material. In some embodiments, the first layer is formed adjacent to the second layer. For example, the first layer and the second layer can be formed on a substrate. For example, the substrate can be an initial layer of the element. According to the embodiments described herein, the substrate can comprise any suitable material. In some embodiments, the substrate is a silicon (Si) substrate.

[0027] The first layer and the second layer can each be formed of a respective material such that, upon subsequent exposure to a benzyl compound, the first layer can cause catalytic polymerization of the benzyl compound, while the second layer does not cause catalytic polymerization of the benzyl compound. That is, the polymerization of the benzyl compound is highly selective with respect to the first layer.

[0028] The first layer may include a dielectric material. In some embodiments, the first layer includes a native oxide formed on a conductive material. For example, the first layer may be a metal oxide (e.g., a transition metal oxide) formed from a metal (e.g., a transition metal). Examples of suitable dielectric materials that can be used to form the first layer include tungsten oxides (e.g., WO 2 、WO 3 、W 2 O 3 or W 2 O 5 ), molybdenum oxides (e.g., MoO 2 or MoO 3 ), ruthenium oxides (e.g., RuO 2 or RuO 4 ), manganese oxides (e.g., MnO, MnO 2 、MnO 3 、Mn 2 O 3 、Mn 3 O 4 、Mn 2 O 7 、Mn 5 O 8 、Mn 7 O 12 or Mn 7 O 13 ), nickel oxides (e.g., NiO or Ni 2 O 3 ), nickelates, etc.

[0029] In some embodiments, the second layer includes a dielectric material. For example, the second layer may include an oxide. Illustratively, the oxide may be silicon oxide or a metal oxide (e.g., a transition metal oxide). As another example, the second layer may include a nitride. Illustratively, the nitride may be silicon nitride or a metal nitride (e.g., a transition metal nitride). Examples of suitable dielectric materials that can be used to form the second layer include SiO 2 、carbon-doped silicon oxide (e.g., SiOC, SiCOH), Si 3 N 4 、Al 2 O 3 、AlN, etc. In some embodiments, the second layer includes a conductive material. For example, the second layer may include a metal. Illustratively, the conductive material may include Co, Cu, Ag, W, Mo, etc.

[0030] In step 120, an optional pre-cleaning process is performed. More specifically, the base structure including the first layer and the second layer can be cleaned. The pre-cleaning process can be performed as appropriate to improve the selectivity of the passivation layer on the surface of the first layer and / or reduce the deposition of the passivation layer on the surface of the second layer. For example, the pre-cleaning process can remove contaminants from the surface of the first layer and / or reduce defect growth on the conductive material. For example, the pre-cleaning process can include thermal wet treatment, hydrogen treatment, water vapor treatment, oxygen dosing treatment, etc.

[0031] Any suitable process parameters can be used to perform the pre-cleaning process. Examples of process parameters for performing pre-cleaning include the amount of time, temperature, pressure, etc. For example, the thermal wet treatment can be performed for a time in the range of about 0.2 seconds to about 10 seconds at a temperature in the range of about 200 °C to about 300 °C (e.g., about 250 °C). In some embodiments, the pressure range is from about 100 millitorr (mTorr) to about 10 torr. In some embodiments, the pressure range is from about 500 millitorr to about 10 torr. In some embodiments, the pressure range is from about 1 torr to about 10 torr.

[0032] In step 130, a passivation layer is formed on the surface of the first layer. More specifically, forming the passivation layer can include exposing the first layer to a benzyl compound. The benzyl compound can react strongly with the first layer to form a passivation layer adsorbed to the surface of the first layer. In some embodiments, the first conductive material is exposed to benzyl alcohol during a single passivation process. In some embodiments, the benzyl compound includes benzyl alcohol. In some embodiments, the benzyl compound includes a benzyl alcohol derivative. In some embodiments, the benzyl compound includes a benzyl halide. For example, the benzyl halide can include benzyl chloride. In some embodiments, the benzyl compound includes a benzyl halide derivative.

[0033] More specifically, the first layer is capable of catalyzing the polymerization of the benzyl compound to form a passivation layer, where the passivation layer includes a polymer adsorbed to the surface of the first layer. In some embodiments, the passivation layer includes PPM. For example, polymerizing the benzyl compound into PPM can include converting the residue of the benzyl compound into dibenzyl ether, and then the dibenzyl ether can be polymerized into PPM.

[0034] In some embodiments, the passivation layer is formed in-situ. In some embodiments, the passivation layer is formed non-in-situ. The formation of the passivation layer can be performed using any suitable process parameters. The process parameters can control the thickness of the passivation layer. Examples of process parameters for performing passivation include temperature, pressure, cycles, pulse time (i.e., the time length of each monomer), purge time (i.e., the time length of introducing a purge gas between pulses), etc.

[0035] For example, forming the passivation layer may include pulsing a benzyl compound at a suitable pressure for a suitable pulse time. In some embodiments, the benzyl compound is pulsed at a pressure in the range of about 500 millitorr to about 50 torr for a pulse time in the range of about 0.1 second to about 10 seconds. In some embodiments, the benzyl compound is pulsed at a pressure in the range of about 1 torr to about 5 torr for a pulse time in the range of about 2 seconds to about 5 seconds. In some embodiments, the benzyl compound is pulsed at a pressure of about 1.8 torr for a pulse time of about 3 seconds.

[0036] Forming the passivation layer may further include, after pulsing the benzyl compound, performing an immersion for a suitable immersion time at a suitable pressure. In some embodiments, the immersion is performed at a pressure in the range of about 500 millitorr to about 50 torr for an immersion time in the range of about 1 second to about 40 seconds. In some embodiments, the immersion is performed at a pressure in the range of about 1 torr to about 5 torr for an immersion time in the range of about 10 seconds to about 30 seconds. In some embodiments, the immersion is performed at a pressure of about 1.8 torr for an immersion time of about 20 seconds.

[0037] Forming the passivation layer may further include, after performing the immersion, performing a purge for a suitable purge time at a suitable pressure. Any suitable purge gas (e.g., Ar or N 2 ) can be used to perform the purge. In some embodiments, the purge is performed at a pressure in the range of about 500 millitorr to about 10 torr for a purge time in the range of about 1 second to about 20 seconds. In some embodiments, the purge is performed at a pressure in the range of about 1 torr to about 5 torr for a purge time in the range of about 5 seconds to about 15 seconds. In some embodiments, the purge is performed at a pressure of about 0.8 torr for a purge time of about 10 seconds.

[0038] The above steps constitute a single cycle. Each step of the cycle can be performed at a suitable temperature. In some embodiments, the temperature ranges from about 100 °C to about 400 °C. In some embodiments, the temperature ranges from about 300 °C to about 375 °C. In some embodiments, the temperature is about 350 °C.

[0039] Any suitable number of cycles can be performed to obtain a suitable passivation layer thickness. In some embodiments, the thickness of the passivation layer can be in the range of about 0.5 nanometers (nm) to about 100 nanometers. In some embodiments, the number of cycles ranges from about 1 cycle to about 50 cycles. In some embodiments, the number of cycles ranges from about 15 cycles to about 35 cycles. In some embodiments, the number of cycles is about 20 cycles.

[0040] In step 140, at least one processing step is performed. More specifically, the at least one processing step may be performed after forming the passivation layer (and optionally pre-cleaning before forming the passivation layer). The passivation layer may be used as a barrier layer during the at least one processing step.

[0041] In some embodiments, the at least one processing step includes depositing a third layer on the surface of the second layer. More specifically, the passivation layer prevents (e.g., blocks) the adsorption of deposition precursors during a subsequent deposition process to form the third layer (i.e., prevents the nucleation of deposition precursors), such that the third layer is selectively deposited on the surface of the second layer preferentially over the passivation layer. This can prevent (e.g., inhibit) the formation of the third layer on the passivation layer. The third layer may be deposited on the surface of the second layer to a target thickness (e.g., by performing an appropriate number of deposition cycles).

[0042] The third layer may include any suitable material. In some embodiments, the third layer includes a dielectric material. The third layer may include any suitable dielectric material. In some embodiments, the third layer includes a nitride (e.g., a metal nitride). Examples of suitable nitrides that can be used to form the third layer include TaN, TiN, MoN, tungsten nitride (e.g., WN, W 2 N, WN 2 ), manganese nitride (MnN, Mn 3 N 2 ), etc. In some embodiments, the third layer includes an oxide. Examples of suitable oxides that can be used to form the third layer include Al 2 O 3 , SiO 2 , HfO 2 , TiO 2 , ZrO 2 , vanadium oxide (e.g., VO, VO 2 , V 2 O 3 , V 2 O 5 , niobium oxide (e.g., NbO, NbO 2 , Nb 2 O 5 ), Ta 2 O 5 , tungsten oxide (e.g., WO 2 , WO 3 , W 2 O 3 , W 2 O 5 , molybdenum oxide (e.g., MoO 2 , MoO 3), etc. In some embodiments, the third layer is a conductive layer. The third layer can include any suitable conductive material. Examples of suitable conductive materials include Co, Cu, Ag, W, Mo, etc.

[0043] The deposition process can be any suitable deposition process. In some embodiments, the deposition process is an ALD process. In some embodiments, the deposition process is a CVD process. The deposition process can utilize any suitable deposition precursor and any suitable process parameters. For example, if the third layer includes a metal oxide, the deposition process can utilize a metal oxide precursor (e.g., a metal alkoxide precursor). As another example, if the third layer includes a conductive material (e.g., a metal), the deposition process can utilize a conductive material precursor (e.g., a metal precursor). The process parameters of the deposition process (e.g., the ALD process or the CVD process) can depend on the deposition precursor used to form the third layer and the target thickness of the resulting third layer.

[0044] In some embodiments, the at least one processing step includes etching the second layer. The passivation layer can resist a specific etching chemical used to etch the second layer, thereby enabling selective etching protection of the first layer during the etching of the second layer.

[0045] In step 150, an optional post-cleaning process can be performed. More specifically, the post-cleaning process can be performed after the formation of the third layer. Performing the post-cleaning process can include removing the passivation layer from the surface of the first layer. As another example, performing the post-cleaning process can further include removing defects.

[0046] Figure 2 is a block diagram of an exemplary electronic component processing system (“system”) 200 according to some embodiments, which can be used to implement benzyl compound passivation for selective deposition and selective etching protection. For example, system 200 can be used to implement method 100 described above with reference to Figure 1 described method 100.

[0047] As shown, system 200 includes a passivation chamber 210, a transfer chamber 220, and at least one processing chamber 230. Interface 240-1 can be disposed between the passivation chamber 210 and the transfer chamber 220, and interface 240-2 can be disposed between the transfer chamber and the processing chamber 230. In some embodiments, interfaces 240-1 and 240-2 are gate valves, respectively. The transfer chamber 220 can include a transfer robot (not shown). In some embodiments, the processing chamber 230 is a deposition chamber. In some embodiments, the processing chamber 230 is an etching chamber.

[0048] The transfer chamber 220, the passivation chamber 210, and the processing chamber 230 can each be maintained under vacuum under controlled conditions (e.g., very little or no humidity). Although not shown, the system 200 can also include at least one load lock chamber and at least one factory interface to enable the substrate to move from the atmosphere to the transfer chamber 220. Thus, the substrate can be transferred between chambers without breaking the vacuum and thus without exposing the substrate to air and / or moisture.

[0049] The passivation chamber 210 can receive a substrate including a first layer and a second layer and form a passivation layer on the first layer by exposing the first layer to a benzyl compound (e.g., benzyl alcohol or benzyl chloride). The passivation chamber 210 is operatively coupled to at least one passivation gas reservoir 212. For example, the at least one passivation gas reservoir 212 can include a benzyl compound reservoir. The at least one passivation gas reservoir 212 can also include a purge gas reservoir. The purge gas reservoir can include any suitable inert gas (e.g., Ar or N 2 ) for purging the passivation chamber 212 during the passivation process. Any suitable passivation process parameters can be used to perform the passivation process. Further details regarding the formation of the passivation layer are described above with reference to Figure 1 description.

[0050] After forming the passivation layer on the surface of the first layer, the transfer robot can transfer the substrate to the processing chamber 230. After receiving the substrate, the processing chamber 230 can perform at least one process. For example, the at least one process can include a deposition process to selectively form a third dielectric layer on the surface of the second layer. In some embodiments, the deposition process is a CVD process. In some embodiments, the deposition process is an ALD process. As another example, the at least one process can include an etching process to etch the second layer. In some embodiments, the etching process is a dry etching process.

[0051] The processing chamber 230 is operatively coupled to at least one process gas reservoir 232. For example, the at least one process gas reservoir 232 can include a deposition precursor reservoir to perform the deposition process. The deposition precursor storage can include any suitable deposition precursor for forming the third layer. As another example, the at least one process gas reservoir 232 can include an etch precursor reservoir to perform the etching process. The etch precursor reservoir can include any suitable etch precursor for etching the second layer. As yet another example, the at least one process gas reservoir 232 can include a purge gas reservoir. The purge gas reservoir can include any suitable inert gas (e.g., Ar or N 2 ) for purging the processing chamber 230. Any suitable process parameters can be used to perform the deposition and / or etching process. Further details regarding the performance of the deposition process and / or etching process are described above with reference toFigure 1 Description

[0052] In some embodiments, the deposition process and / or the etching process are performed in the passivation chamber 210 (i.e., the passivation chamber 210 is a processing chamber configured to perform passivation processing and the deposition process and / or the etching process). In these embodiments, at least one process gas reservoir 232 may be operatively coupled to the passivation chamber 210. In some embodiments, the passivation processing is performed in the processing chamber 230 (i.e., the processing chamber 230 is a processing chamber configured to perform passivation processing and the deposition process and / or the etching process). In these embodiments, at least one passivation gas reservoir 212 may be operatively coupled to the processing chamber 230.

[0053] In some embodiments, the system 200 may optionally include a cleaning chamber 250 to perform an optional cleaning process (i.e., a pre-cleaning process) before passivation and / or an optional cleaning process (i.e., a post-cleaning process) after the formation of the second layer. The interface 240-3 may be disposed between the cleaning chamber 250 and the transfer chamber 220. In some embodiments, the cleaning chamber 250 is an in-situ cleaning chamber and the interface 240-3 is a gate valve. In some embodiments, the cleaning chamber 250 is a non-in-situ cleaning chamber and the interface 240-3 is a load lock chamber. Any suitable pre-cleaning process parameters may be used to perform the pre-cleaning process and / or the post-cleaning process.

[0054] For example, performing the post-cleaning process may include heating the element to a temperature greater than or equal to 350 °C. As another example, performing the post-cleaning process may further include removing defects (e.g., portions of dielectric material that may have formed on the conductive material during the deposition process). As another example, the post-cleaning process may be a plasma cleaning process. As yet another example, the post-cleaning process may be a remote plasma cleaning process. Any suitable post-cleaning process parameters may be used to perform the post-cleaning process.

[0055] The cleaning chamber 250 may be operatively coupled to at least one cleaning gas reservoir 252. The at least one cleaning gas reservoir 252 may include a suitable cleaning chemical. The at least one cleaning gas reservoir 252 may further include a purge gas reservoir. The purge gas reservoir may include any suitable inert gas (e.g., Ar or N 2 ) for purging the cleaning chamber 252 during the passivation process.

[0056] In some embodiments, the pre-cleaning process can be performed in the same chamber as passivation (e.g., passivation chamber 210 or at least one processing chamber 230). In these embodiments, at least one cleaning gas reservoir 252 can be operatively coupled to passivation chamber 210 and / or at least one processing chamber 230. In some embodiments, the post-cleaning process can be performed in passivation chamber 210 and / or at least one processing chamber 230. In these embodiments, at least one cleaning gas reservoir 252 can be operatively coupled to passivation chamber 210 and / or at least one processing chamber 230. Further details regarding performing the cleaning process (e.g., pre-cleaning process and / or post-cleaning process) are described above with reference to Figure 1 Description.

[0057] Figures 3A - 3D is a cross-sectional view of an exemplary fabrication of an element 300 for selective deposition and selective etching protection of benzyl compound passivation according to some embodiments. As Figure 3A shown, the element 300 can include a base structure 302, the base structure 302 including a substrate 305, a layer 310 disposed on the substrate 305, and a layer 320 disposed on the substrate 305 adjacent to the conductive layer. The substrate 305 can include at least one layer including a substrate layer (e.g., Si substrate layer). At least one layer of the substrate 305 can further include one or more additional layers disposed between the substrate layer 305 and the layers 310 and 320.

[0058] The layer 310 can include any suitable conductive material. For example, the layer 310 can include a metal (e.g., a transition metal). Examples of suitable transition metals include W, Mo, Ru, Mn, Ni, etc. In some embodiments, the layer 320 includes a dielectric material. The layer 320 can include any suitable dielectric material. For example, the layer 320 can include an oxide. Illustratively, the oxide can be silicon oxide or a metal oxide (e.g., a transition metal oxide). As another example, the second layer can include a nitride. Illustratively, the nitride can be silicon nitride or a metal nitride (e.g., a transition metal nitride). Examples of suitable dielectric materials that can be used to form the dielectric layer 320 include SiO 2 , carbon-doped silicon oxide (e.g., SiOC, SiCOH), Si 3 N 4 , Al 2 O 3 , AlN, etc. In some embodiments, the layer 320 includes a conductive material. For example, the second layer can include a metal. Illustratively, the conductive material can include Co, Cu, Ag, W, Mo, etc.

[0059] As further shown, a native oxide layer 312 can be formed on layer 310. For example, the first layer can be a metal oxide (e.g., a transition metal oxide). Illustratively, if layer 310 includes W, the native oxide layer 312 can include tungsten oxide (e.g., WO 2 2 3 3 2 3 3 4 2 2 5 5 2 2 3 3 2 2 3 3 2 2 3 3 3 3 4 4 2 2 7 5 5 3 8 7 7 2 12 8 7 3 13 4 2 2 3 3 Figures 1 - 2 are described above.

[0060] As Figure 3B shown, a passivation layer 330 is formed on the surface of the native oxide layer 312. More specifically, forming the passivation layer 330 can include exposing the native oxide layer 312 to a benzyl compound. The benzyl compound can react strongly with the native oxide layer 312 to form the passivation layer 330, which adsorbs to the surface of the native oxide layer 312. In some embodiments, the benzyl compound includes benzyl alcohol. In some embodiments, the benzyl compound includes benzyl alcohol derivatives. In some embodiments, the benzyl compound includes benzyl halides. For example, benzyl halide can include benzyl chloride. In some embodiments, the benzyl compound includes benzyl halide derivatives.

[0061] More specifically, the native oxide 312 is capable of catalytically polymerizing a benzyl compound to form a passivation layer 330 including a polymer. In some embodiments, the passivation layer 330 includes PPM. The native oxide 312 may be exposed to the benzyl compound for any suitable number of passivation processes to achieve the desired passivation layer thickness. In some embodiments, the native oxide 312 is exposed to the benzyl compound during a single passivation process. Further details regarding the formation of the passivation layer 330 are described above with reference to Figures 1 - 2 Description.

[0062] After forming the passivation layer 330, the passivation layer 330 may be used as a barrier layer to perform at least one processing step. In some embodiments, as Figure 3C shown, the at least one processing step includes depositing a layer 340 on the surface of the layer 320. More specifically, the passivation layer enables the layer 340 to be selectively deposited on the surface of the layer 320 preferentially over the passivation layer 330. More specifically, the passivation layer may prevent (e.g., block) the adsorption of deposition precursors during the deposition process to form the layer 340 (i.e., prevent the nucleation of deposition precursors). This may prevent (e.g., inhibit) the formation of a third layer on the passivation layer. The third layer may be deposited on the surface of the second layer to a target thickness (e.g., by performing a suitable number of deposition cycles).

[0063] The layer 340 may include any suitable material. In some embodiments, the layer 340 includes a dielectric material. The layer 340 may include any suitable dielectric material. In some embodiments, the third layer may include a nitride (e.g., a metal nitride). Examples of suitable nitrides that can be used to form the layer 340 include TaN, TiN, MoN, tungsten nitride (e.g., WN, W 2 N, WN 2 ), manganese nitride (e.g., MnN, Mn 3 N 2 ), etc. In some embodiments, the layer 340 includes an oxide. Examples of suitable oxides that can be used to form the layer 340 include Al 2 O 3 , SiO 2 , HfO 2 , TiO 2 , ZrO 2 , vanadium oxide (e.g., VO, VO 2 , V 2 O 3 , V 2 O 5 , niobium oxide (e.g., NbO, NbO 2 , Nb 2 O 5 ), Ta 2 O 5, tungsten oxides (such as WO 2 , WO 3 , W 2 O 3 , W 2 O 5 ), molybdenum oxides (such as MoO 2 , MoO 3 ), etc. In some embodiments, layer 340 includes a conductive material. Examples of suitable conductive materials that can be used to form layer 340 include Co, Cu, Ag, W, Mo, etc.

[0064] The deposition process can be any suitable deposition process. In some embodiments, the deposition process is an ALD process. In some embodiments, the deposition process is a CVD process. The deposition process can utilize any suitable deposition precursor and any suitable process parameters. For example, if layer 340 includes a metal oxide, the deposition process can utilize a metal oxide precursor (e.g., a metal alkoxide precursor). As another example, if layer 340 includes a conductive material (e.g., a metal), the deposition process can utilize a conductive material precursor (e.g., a metal precursor). The process parameters of the deposition process (e.g., the ALD process or the CVD process) can depend on the deposition precursor used to form layer 340 and the target thickness of the resulting layer 340.

[0065] In some embodiments, and as Figure 3D shown, at least one processing step includes etching layer 320. The passivation layer 330 can resist the specific etching chemistry used to etch layer 320, which can provide suitable etching protection during the etching of layer 320. Further details regarding the execution of at least one processing step are described above with reference to Figures 1 - 2 .

[0066] In some embodiments, at least one cleaning process can be performed. For example, at least one cleaning process can include a pre-cleaning process performed before forming the passivation layer 330 and / or a post-cleaning process performed after at least one processing step. Further details regarding the execution of at least one cleaning process are described above with reference to Figures 1 - 2 .

[0067] To provide a good understanding of the various embodiments of the present disclosure, the foregoing description sets forth numerous specific details, such as examples of specific systems, components, methods, etc. However, it will be apparent to those skilled in the art that at least some embodiments of the present disclosure may be practiced without these specific details. In other instances, well-known components or methods have not been described in detail, or are presented in a simple block diagram format, to avoid unnecessarily obscuring the present disclosure. Accordingly, the specific details set forth are merely exemplary. Specific embodiments may vary from these exemplary details and still be considered within the scope of the present disclosure.

[0068] References to "an embodiment" or "one embodiment" in this specification mean that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment. Thus, the appearances of the phrases "in an embodiment" or "in one embodiment" throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the word "or" is intended to mean an inclusive "or" rather than an exclusive "or". When the term "about" or "approximately" is used herein, it means that the stated nominal value is accurate within ±10%.

[0069] Although the operations of the methods herein are shown and described in a particular order, the order of the operations of each method may be changed so that certain operations may be performed in the reverse order, or so that certain operations may be performed at least partially concurrently with other operations. In another embodiment, the instructions or sub-operations of different operations may be in an intermittent and / or alternating manner.

[0070] It should be understood that the above description is intended to be illustrative and not restrictive. After reading and understanding the above description, many other embodiments will be apparent to those skilled in the art. Accordingly, the scope of the present disclosure should be determined with reference to the appended claims and the full scope of equivalents to which such claims are entitled.

Claims

1. A method, the method comprises: forming a first layer and a second layer on a substrate; forming a passivation layer on the surface of the first layer and not forming the passivation layer on the surface of the second layer by exposing the first layer and the second layer to a benzyl compound; and after forming the passivation layer on the first layer, performing at least one of the following: depositing a third layer on the second layer, or etching the second layer.

2. The method according to claim 1, the method further comprises: performing a pre-cleaning process to clean the surface of the first layer before forming the passivation layer.

3. The method according to claim 1, wherein depositing the third layer on the second layer comprises using at least one of the following: an atomic layer deposition (ALD) process or a chemical vapor deposition (CVD) process.

4. The method according to claim 1, wherein forming the passivation layer comprises: using the first layer to cause catalytic polymerization of the benzyl compound, and wherein the passivation layer comprises poly(phenylene methylene) (PPM).

5. The method according to claim 1, wherein the first layer comprises a transition metal oxide.

6. The method according to claim 5, wherein the first layer comprises at least one of the following: tungsten oxide, molybdenum oxide, or nickel oxide.

7. The method according to claim 1, wherein the second layer comprises a dielectric layer.

8. The method according to claim 7, wherein the second layer comprises at least one of the following: silicon dioxide, carbon-doped silicon oxide, silicon nitride, transition metal oxide, or transition metal nitride.

9. The method according to claim 1, wherein the second layer comprises a conductive material.

10. The method according to claim 1, wherein the third layer comprises a metal oxide or a metal nitride.

11. A system comprising at least one chamber, the at least one chamber being configured to: form a passivation layer on the surface of a first layer and not form the passivation layer on the surface of a second layer by exposing the first layer and the second layer to a benzyl compound, wherein the first layer and the second layer are formed on a substrate; and after forming the passivation layer, perform at least one of the following: depositing a third layer on the second layer using a deposition process, or etching the second layer.

12. The system according to claim 11, wherein the at least one chamber is further configured to perform a pre-cleaning process to clean the surface of the first layer before forming the passivation layer.

13. The system according to claim 11, wherein depositing the third layer on the second layer comprises using at least one of the following: an atomic layer deposition (ALD) process or a chemical vapor deposition (CVD) process.

14. The system according to claim 11, wherein forming the passivation layer comprises using the first layer to cause catalytic polymerization of the benzyl compound, and wherein the passivation layer comprises poly(phenylene methylene) (PPM).

15. The system according to claim 11, the system further comprising a pre-deposition precursor memory operably coupled to the at least one chamber.

16. The system according to claim 11, wherein the first layer comprises at least one of the following: tungsten oxide, molybdenum oxide, or nickel oxide.

17. The system according to claim 11, wherein the second layer comprises a dielectric layer.

18. The system according to claim 17, wherein the second layer comprises at least one of the following: silicon dioxide, carbon-doped silicon oxide, silicon nitride, transition metal oxide, or transition metal nitride.

19. The system according to claim 11, wherein the second layer comprises a conductive material.

20. The system according to claim 11, wherein the third layer comprises a metal oxide or a metal nitride.

Images