A light-transmitting metal material and its preparation method and application

Abstract

The present invention discloses a light-transmitting metal material, its preparation method, and application. The light-transmitting metal material of the present invention comprises a first metal and a second metal, wherein the first metal comprises at least one of Pt, Pd, Ir, or Ru, and the second metal comprises silver. In the present invention, the second metal layer is prepared on the surface of the first metal layer using atomic layer deposition technology. This not only enables the layered growth of silver material to form the second metal layer and precisely controls the film thickness, but also achieves high continuity of the second metal layer at an ultra-low thickness, resulting in a material with excellent light transmission performance.

Description

Technical Field

[0001] The present invention belongs to the technical field of conductive materials, and in particular relates to a light-transmitting metal material and a preparation method and application thereof. Background Art

[0002] Ag is one of the most conductive metals, with a reflectivity exceeding 91% in the visible spectrum. This makes nano-Ag films promising for applications in optoelectronic devices. For example, Ag films can be used as antireflection coatings and as transparent conductive layers in flexible electronic devices. However, to achieve these performance requirements, the thickness of the nano-Ag film must typically be reduced to less than 10nm to meet light transmission requirements.

[0003] The traditional coating technology for nano-Ag films is physical vapor deposition (PVD). The film formation method of PVD is nucleation growth, which usually makes it difficult to form a continuous Ag film within the ultra-thin thickness range (such as below 10nm). Usually, only island-shaped discontinuous Ag particles can be formed, with poor performance. Summary of the Invention

[0004] The present invention aims to solve at least one of the technical problems existing in the above-mentioned prior art. To this end, the present invention provides a light-transmitting metal material having a second metal layer with good continuity and good performance.

[0005] The present invention also proposes the application of the above-mentioned light-transmitting metal material.

[0006] The present invention also provides a photoelectric device.

[0007] The present invention also provides a flexible electronic device.

[0008] In a first aspect of the present invention, a light-transmitting metal material is provided, comprising a first metal and a second metal, wherein the first metal comprises at least one of Pt, Pd, Ir or Ru, and the second metal comprises silver.

[0009] The light-transmitting metal material according to the embodiment of the present invention has at least the following beneficial effects:

[0010] In the present invention, since the first metal and the second metal have similar electronic configuration structures and similar properties, the interface energy between the first metal and the second metal is low, thereby improving the wetting of the second metal on the surface and increasing the nucleation rate of silver, so that a silver layer with good continuity can be formed, thereby achieving both good electrical conductivity and light transmittance.

[0011] In some embodiments of the present invention, the light-transmitting metal material includes a first metal layer and a second metal layer arranged in sequence, the first metal layer includes at least one of Pt, Pd, Ir or Ru, and the second metal layer includes silver.

[0012] In some embodiments of the present invention, the light-transmitting metal material includes a mixed layer of a first metal and a second metal.

[0013] In some embodiments of the present invention, the light-transmitting metal material is prepared by atomic layer deposition technology.

[0014] In some embodiments of the present invention, the first metal layer and the second metal layer are prepared by atomic layer deposition technology.

[0015] In some embodiments of the present invention, the mixed layer is prepared by atomic layer deposition technology.

[0016] Atomic layer deposition technology is a method of forming a thin film by alternately introducing pulses of gaseous precursors and reactants into a reaction chamber and causing surface chemical reactions on the substrate. Through self-limiting alternating saturation reactions of precursors, a thin film with highly controllable thickness, composition, morphology and structure at the nanoscale is obtained.

[0017] In the present invention, since the metal in the first metal layer has a similar electronic configuration structure and similar properties to metallic silver, a second metal layer is prepared on the surface of the first metal layer by atomic layer deposition technology. The metal-metal interface energy is low (for example, much lower than the metal oxide-metal interface energy). The use of metal priming can further enhance the wetting of the second metal layer on the surface, increase the nucleation rate of silver, and thus enhance the continuity of the second metal layer. Therefore, not only can the layered growth of the silver material be achieved to form the second metal layer and the film thickness be precisely controlled, but the second metal layer also has high continuity (the second metal layer is composed of multiple atomic layers stacked together, and a dense structure with continuous coverage is formed between the layers) at an ultra-low thickness (for example, a thickness <5 nm). For example, a uniform deposition of an ultra-thin second metal layer of 1-2 nm can be achieved, and the resulting material has good electrical conductivity and light transmittance.

[0018] In some embodiments of the present invention, the surface roughness of the second metal layer is less than 1 nm, and the transmittance of the material is greater than 98% when the thickness is less than 4 nm.

[0019] In some embodiments of the present invention, the second metal layer is formed on the surface of the first metal layer by atomic layer deposition technology.

[0020] In some embodiments of the present invention, the thickness of the first metal layer is less than 20 nm, such as optionally less than 5 nm.

[0021] In some embodiments of the present invention, the thickness of the first metal layer is 1-5 nm.

[0022] In some embodiments of the present invention, the thickness of the second metal layer is less than 20 nm, such as less than 5 nm.

[0023] In some embodiments of the present invention, the thickness of the second metal layer is 1-5 nm.

[0024] In some embodiments of the present invention, the raw materials for preparing the second metal layer include precursor I and reactant I.

[0025] In some embodiments of the present invention, the precursor I includes at least one of Ag(piv)PEt3, Ag(piv)PBu3, Ag(fod)PEt3 or Ag(hfac)COD.

[0026] In some embodiments of the present invention, the reactant I includes at least one of H2O, O2, O3, NH3, H2, NH3 plasma, H2 plasma or O2 plasma.

[0027] In some embodiments of the present invention, the conductivity of the film formed by the first metal layer and the second metal layer is less than 20 μΩ·cm, such as 10 μΩ·cm.

[0028] In some embodiments of the present invention, the light transmittance of the film formed by the first metal layer and the second metal layer is greater than 95%.

[0029] In some embodiments of the present invention, one or more first metal layers may be provided, such as one, two, three, four, five, etc.

[0030] In some embodiments of the present invention, the first metal layer includes at least one of a Pt layer, a Pd layer, an Ir layer, or a Ru layer.

[0031] In some embodiments of the present invention, the first metal layer is prepared by atomic layer deposition technology.

[0032] In some embodiments of the present invention, the raw materials for preparing the first metal layer include a precursor II and a reactant II.

[0033] In some embodiments of the present invention, the precursor II includes at least one of RuCp2, Ru(EtCp)2, (EtCp)Ru(MeCp), Ru(tBu-Me-amd)2(CO)2, Ru(DMPD)2, Ru(DMBD)CO3, Ir(acac)3, (MeCp)Ir(CHD), (EtCp)Ir(COD), MeCpPtMe3, Pt(acac)2, Pd(hfac)2 or Pd(thd)2.

[0034] In some embodiments of the present invention, the reactant II includes at least one of H2O, O2, O3, NH3, H2, NH3 plasma, H2 plasma or O2 plasma.

[0035] In some embodiments of the present invention, the light-transmitting metal material further includes a base layer, and the first metal layer is disposed on the surface of the base layer.

[0036] The material of the substrate layer is not limited and can be selected from transparent polymer materials, glass, etc. In some embodiments of the present invention, the substrate layer comprises at least one of PET and glass. The first metal layer in the present invention can enhance adhesion to the substrate (e.g., polymer or glass) and facilitate wetting of the Ag film to form a continuous film.

[0037] In some embodiments of the present invention, the thickness of the base layer is not limited, and can be, for example, 2 μm to 3 mm.

[0038] In some embodiments of the present invention, the base layer comprises glass, and the thickness of the glass can be selected to be 0.2-3 mm.

[0039] In some embodiments of the present invention, the base layer comprises a transparent polymer material, and the thickness of the transparent polymer material can be 2-200 μm. Alternatively, the transparent polymer material can be PET or the like.

[0040] In a second aspect of the present invention, a method for preparing a light-transmitting metal material is proposed, comprising the following steps: preparing a second metal layer on the surface of a first metal layer by atomic layer deposition technology to obtain the light-transmitting metal material.

[0041] In some embodiments of the present invention, the preparation method comprises the following steps:

[0042] S1, preparing a first metal layer on the surface of the substrate layer;

[0043] S2, preparing a second metal layer on the surface of the first metal layer by atomic layer deposition technology to obtain the light-transmitting metal material.

[0044] In some embodiments of the present invention, in step S1 , a first metal layer is formed on the surface of the substrate layer by physical vapor deposition technology, chemical vapor deposition technology, or atomic layer deposition technology.

[0045] In some embodiments of the present invention, in step S1, the deposition temperature of the atomic layer deposition is 50-250°C, such as optionally 100-200°C.

[0046] In some embodiments of the present invention, step S1 specifically includes the following operations:

[0047] S1-1, in the atomic layer deposition system chamber, activating the substrate layer using plasma;

[0048] S1-2, introducing precursor II and then reactant II at 25-400° C. to form a first metal layer on the surface of the substrate layer.

[0049] In some embodiments of the present invention, in step S1-1, the plasma includes at least one of oxygen plasma or ozone plasma.

[0050] In some embodiments of the present invention, step S1-2 specifically includes the following operations:

[0051] S1-2-1, pulse precursor II into the atomic layer deposition system chamber at 100-200°C and purge with N2;

[0052] S1-2-2, pulse reactant II into the atomic layer deposition system chamber and purge with N2;

[0053] S1-2-3, repeating steps S1-2-1 and S1-2-2 m times to form a first metal layer on the surface of the substrate layer.

[0054] In some embodiments of the present invention, in step S1-2-3, m is an integer, 0 <m<200。

[0055] In some embodiments of the present invention, in step S2, the deposition temperature of the atomic layer deposition is 50-250°C, such as 100-200°C.

[0056] In some embodiments of the present invention, step S2 includes: introducing precursor I and reactant I into the atomic layer deposition system chamber at 25-400° C. to form a second metal layer on the surface of the first metal layer.

[0057] In some embodiments of the present invention, step S2 specifically includes the following operations:

[0058] S2-1, pulse precursor I into the atomic layer deposition system chamber at 100-200°C and purge with N2;

[0059] S2-2, reactant I is pulsed into the atomic layer deposition system chamber and N2 is introduced for purging;

[0060] S2-3, repeating steps S2-1 and S2-2 n times to form a second metal layer on the surface of the first metal layer.

[0061] In some embodiments of the present invention, in step S2-3, n is an integer, 1000≥n≥0.

[0062] A third aspect of the present invention provides an ultra-low-reflection anti-reflection coating comprising the aforementioned light-transmitting metal material. Specifically, the ultra-low-reflection anti-reflection coating of the present invention can be used in anti-reflection-coated lenses to achieve ultra-low reflectivity (<0.1%) and eliminate ghosting and glare.

[0063] In some embodiments of the present invention, the ultra-low reflection anti-reflection film further includes an anti-reflection film base layer.

[0064] In some embodiments of the present invention, the antireflection film base layer includes TiO2 and SiO2.

[0065] In some embodiments of the present invention, the ultra-low reflection anti-reflection film includes an anti-reflection film base layer, a first metal layer, and a second metal layer arranged in sequence.

[0066] Through the above implementation, the ultra-low-reflection anti-reflection film has an excellent anti-reflection effect, and achieves an ultra-low-reflection effect with a reflectivity of <0.1% in the visible light range of 380-780nm.

[0067] A fourth aspect of the present invention provides the use of the above-mentioned light-transmitting metal material or the above-mentioned ultra-low reflection anti-reflection film in optical devices, optoelectronic devices or flexible electronic devices.

[0068] In some embodiments of the present invention, the optical device includes the ultra-low reflection anti-reflection film.

[0069] In some embodiments of the present invention, the optical device includes a lens, such as a lens used in mobile phones, cameras, security monitoring, vehicles (such as cars), etc.

[0070] According to a fifth aspect of the present invention, a photoelectric device is provided, comprising the above-mentioned light-transmitting metal material.

[0071] A sixth aspect of the present invention provides a flexible electronic device comprising the aforementioned light-transmitting metal material. The light-transmitting metal material can achieve electrical conductivity without affecting light transmission, thereby improving the performance of the flexible electronic device.

[0072] In some embodiments of the present invention, the flexible electronic device includes a flexible display device and a flexible support device, such as a charging mobile phone case, a flexible display screen, etc.

[0073] In some embodiments of the present invention, the flexible electronic device includes an overheating protection element, and the overheating protection element includes the light-transmitting metal material. BRIEF DESCRIPTION OF THE DRAWINGS

[0074] Figure 1 1 to 6 are the six repetitions of Example 3. DETAILED DESCRIPTION

[0075] The following will clearly and completely describe the concept and technical effects of the present invention in conjunction with the embodiments to fully understand the purpose, features and effects of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, other embodiments obtained by those skilled in the art without creative work are all within the scope of protection of the present invention.

[0076] The experimental methods in the following examples and comparative examples, where specific conditions are not specified, are generally based on conventional conditions in the art or conditions recommended by the manufacturers; the raw materials and reagents used, unless otherwise specified, are all commercially available from conventional markets.

[0077] Example 1

[0078] This embodiment discloses a light-transmitting metal material, the preparation process of which specifically includes:

[0079] (I) Place the PET polymer film on the sample stage in the chamber (reaction chamber) of an atomic layer deposition system (Exploiter 200SP). Set the ALD temperature to 115°C, the Ag precursor to 80°C, and the Ru precursor to 60°C. Preheat for 60 min.

[0080] (II) Preparation of Ru layer:

[0081] (a) Ru(DMPD)2 is used as a vapor precursor (Ru precursor) and nitrogen is used as a carrier gas. It is controlled by an ALD valve and enters the reaction chamber in a pulsed form. The valve is opened for 1 second and the vapor precursor stays in the reaction chamber for 3 seconds. A gas-curing reaction occurs on the surface of the exposed PET polymer film substrate (thickness of about 150μm), causing the Ru precursor to be adsorbed on the substrate surface.

[0082] (b) N2 gas at 3000 sccm was introduced into the reaction chamber for 30 s to remove excess precursor vapor and reaction by-products.

[0083] (c) Water vapor is introduced into the chamber in the form of pulses. The valve is opened for 1 second and the water vapor stays in the reaction chamber to continue reacting with the Ru precursor adsorbed on the surface of the PET polymer film.

[0084] (d) N2 gas was introduced at 3000 sccm for 60 s to remove excess water vapor and reaction by-products from the reaction chamber.

[0085] After steps (a) to (d) were cycled 100 times, a 1 nm thick Ru layer was formed on the surface of the PET polymer film.

[0086] (III) Preparation of Ag layer:

[0087] (e) Ag(piv)PEt3 is used as the vapor precursor (Ag precursor), nitrogen is used as the carrier gas, and the ALD valve is used to control it to enter the reaction chamber in a pulsed form. The valve is opened for 1 second, and the vapor precursor stays in the reaction chamber for 5 seconds. A gas-curing reaction occurs on the surface of the exposed Ru layer, causing the Ag precursor to be adsorbed on the surface of the Ru layer.

[0088] (f) N2 gas at 3000 sccm was introduced into the reaction chamber for 30 s to remove excess precursor vapor and reaction by-products.

[0089] (g) NH3 plasma is introduced for 5s to continue reacting with the Ag precursor adsorbed on the surface of the Ru layer.

[0090] (k) N2 gas was introduced at 3000 sccm for 10 s to remove excess NH3 and reaction by-products from the reaction chamber.

[0091] After 500 cycles of steps (e) to (k), a 4 nm thick Ag layer was formed on the surface of the Ru layer, yielding a light-transmitting metal material. The surface roughness of the Ag layer was less than 1 nm.

[0092] This embodiment also discloses a photoelectric device, comprising the light-transmitting metal material prepared in this embodiment.

[0093] This embodiment also discloses a flexible electronic device, including the light-transmitting metal material prepared in this embodiment.

[0094] Example 2

[0095] This embodiment discloses a light-transmitting metal material, which differs from Example 1 only in that, in Ⅰ and Ⅱ, the Ru precursor is replaced by a mixed precursor of Ru and Pt in a molar ratio of 1:1, the Pt precursor in the mixed precursor is MeCpPtMe3, and the rest is the same as Example 1.

[0096] This embodiment also discloses a photoelectric device, comprising the light-transmitting metal material prepared in this embodiment.

[0097] This embodiment also discloses a flexible electronic device, including the light-transmitting metal material prepared in this embodiment.

[0098] Example 3

[0099] This embodiment discloses a light-transmitting metal material, the preparation process of which specifically includes:

[0100] (I) Place a glass substrate (containing an atomic layer deposition TiO2-SiO2 antireflection film base layer with a reflectivity of approximately 0.5% in the visible light range of 380nm-780nm) on the sample stage in the atomic layer deposition system chamber (reaction chamber). Set the deposition temperature to 200°C, the Ag precursor to 95°C, and the Pt precursor to 40°C. Preheat for 60 minutes.

[0101] (II) Preparation of Pt layer:

[0102] (a) Me3Pt (MeCp) is used as a vapor precursor, and nitrogen is used as a carrier gas. It is controlled by an ALD valve and enters the reaction chamber in a pulsed form. The valve is opened for 1 second, and the vapor precursor stays in the reaction chamber for 3 seconds. A gas-curing reaction occurs on the surface of the exposed glass substrate (thickness is about 2 mm), causing the Pt precursor to be adsorbed on the substrate surface.

[0103] (b) N2 gas at 3000 sccm was introduced into the reaction chamber for 30 s to remove excess precursor vapor and reaction by-products.

[0104] (c) O2 is introduced for 5 seconds to continue reacting with the Pt precursor adsorbed on the substrate surface.

[0105] (d) N2 gas was introduced at 3000 sccm for 10 s to remove excess O2 and reaction by-products from the reaction chamber.

[0106] After steps (a) to (d) were cycled 100 times, a 1 nm thick Pt layer was formed on the surface of the glass substrate.

[0107] (III) Preparation of Ag layer:

[0108] (e) Ag(fod)PEt3 is used as a gas-phase precursor, nitrogen is used as a carrier gas, and the ALD valve is used to control the gas-phase precursor to enter the reaction chamber in a pulsed form. The valve is opened for 1 second, and the gas-phase precursor stays in the reaction chamber for 5 seconds. A gas-curing reaction occurs on the surface of the exposed Pt layer, causing the Ag precursor to be adsorbed on the surface of the Pt layer.

[0109] (f) N2 gas at 3000 sccm was introduced into the reaction chamber for 30 s to remove excess precursor vapor and reaction by-products.

[0110] (g) H2 plasma is introduced for 5s to continue reacting with the Ag precursor adsorbed on the surface of the Pt layer.

[0111] (k) N2 gas was introduced at 3000 sccm for 10 s to remove excess NH3 and reaction by-products from the reaction chamber.

[0112] After steps (e) to (k) are cycled 500 times, a 4 nm thick Ag layer is formed on the surface of the Pt layer, and a light-transmitting metal material is obtained.

[0113] This embodiment also discloses a photoelectric device, comprising the light-transmitting metal material prepared in this embodiment.

[0114] This embodiment also discloses a flexible electronic device, including the light-transmitting metal material prepared in this embodiment.

[0115] Example 4

[0116] This embodiment discloses a light-transmitting metal material, which differs from the embodiment 3 only in that a 1 nm thick Pt layer is formed on the glass surface by an evaporation method, and the rest is the same as the embodiment 3.

[0117] This embodiment also discloses a photoelectric device, comprising the light-transmitting metal material prepared in this embodiment.

[0118] This embodiment also discloses a flexible electronic device, including the light-transmitting metal material prepared in this embodiment.

[0119] Comparative Example 1

[0120] This comparative example discloses a composite material, which differs from the light-transmitting metal material in Example 1 only in that it does not contain a Ru layer, and a 5 nm thick Ag layer is directly prepared on the surface of the PET polymer film by an evaporation method.

[0121] Comparative Example 2

[0122] This comparative example discloses a composite material, which differs from the light-transmitting metal material in Example 1 only in that it does not contain a Ru layer, and an 80 nm thick Ag layer is directly prepared on the surface of the PET polymer film by a vapor deposition method.

[0123] Comparative Example 3

[0124] This comparative example discloses a composite material, which differs from the light-transmitting metal material in Example 1 only in that it does not contain a Ru layer, and a 5 nm thick Ag layer is directly prepared on the surface of the PET polymer film, and the Ag layer preparation process is the same as that in Example 1.

[0125] Comparative Example 4

[0126] This comparative example discloses a light-transmitting metal material, which differs from the light-transmitting metal material in Example 1 only in that it does not contain an Ag layer and the thickness of Ru is 5 nm (the preparation process of the Ru layer is the same as that of Example 1).

[0127] Comparative Example 5

[0128] This comparative example discloses a light-transmitting material, which differs from the light-transmitting metal material in Example 3 only in that it does not contain a Ru layer, and a 5 nm thick Ag layer is directly prepared on the surface of a glass substrate by an evaporation method.

[0129] Comparative Example 6

[0130] This comparative example discloses a light-transmitting material, which differs from the light-transmitting metal material in Example 3 only in that it does not contain a Pt layer, and a 5 nm thick Ag layer is directly prepared on the glass surface, and the Ag layer preparation process is the same as that in Example 3.

[0131] Comparative Example 7

[0132] This comparative example discloses a light-transmitting material, which differs from the light-transmitting metal material in Example 3 only in that it does not contain an Ag layer and the thickness of Pt is 5 nm (the preparation process of the Pt layer is the same as that in Example 3).

[0133] Comparative Example 8

[0134] This comparative example discloses a light-transmitting material, the preparation process of which specifically includes:

[0135] (I) Place the PET polymer film on the sample stage in the atomic layer deposition system chamber (reaction chamber), set the deposition temperature to 115°C, the Cu precursor to 80°C, and the Ag precursor to 60°C, and preheat for 60 minutes.

[0136] (II) Preparation of Cu layer:

[0137] (a) Cu(hfac)2 is used as a gas-phase precursor, nitrogen is used as a carrier gas, and the ALD valve is used to control the gas-phase precursor to enter the reaction chamber in a pulsed form. The valve is opened for 1 second, and the gas-phase precursor stays in the reaction chamber for 1 second. A gas-curing reaction occurs on the exposed surface of the PET polymer film, causing the Cu precursor to be adsorbed on the surface of the PET polymer film.

[0138] (b) N2 gas at 3000 sccm was introduced into the reaction chamber for 30 s to remove excess precursor vapor and reaction by-products.

[0139] (c) 1000 sccm H2 plasma was introduced into the reaction chamber for 10 s to continue reacting with the Cu precursor adsorbed on the surface of the PET polymer film.

[0140] (d) N2 gas was introduced at 3000 sccm for 60 s to remove excess H2 and reaction by-products from the reaction chamber.

[0141] After steps (a) to (d) were cycled 20 times, a 1 nm thick Cu layer was formed on the surface of the PET polymer film.

[0142] (III) Preparation of Ag layer:

[0143] (e) Ag(piv)PEt3 is used as a gas-phase precursor, nitrogen is used as a carrier gas, and the ALD valve is used to control the gas-phase precursor to enter the reaction chamber in a pulsed form. The valve is opened for 1 second, and the gas-phase precursor stays in the reaction chamber for 5 seconds. A gas-curing reaction occurs on the surface of the exposed Cu layer, causing the Ag precursor to be adsorbed on the substrate surface.

[0144] (f) N2 gas at 3000 sccm was introduced into the reaction chamber for 30 s to remove excess precursor vapor and reaction by-products.

[0145] (g) NH3 plasma is introduced for 5s to continue reacting with the Ag precursor adsorbed on the surface of the Cu layer.

[0146] (k) N2 gas was introduced at 3000 sccm for 10 s to remove excess NH3 and reaction by-products from the reaction chamber.

[0147] After steps (e) to (k) are cycled 500 times, a 4 nm thick Ag layer is formed on the surface of the Cu layer, and a light-transmitting metal material is obtained.

[0148] Comparative Example 9

[0149] This comparative example discloses a light-transmitting material, which differs from comparative example 8 only in that it does not contain an Ag layer and the thickness of Cu is 5 nm (the preparation process of the Cu layer is the same as that of comparative example 8).

[0150] Comparative Example 10

[0151] This comparative example discloses a light-transmitting material, the preparation process of which specifically includes:

[0152] (I) Place the PET polymer film on the sample stage in the atomic layer deposition system chamber (reaction chamber), set the deposition temperature to 115°C, the Cu precursor to 80°C, and the Ag precursor to 60°C, and preheat for 60 minutes.

[0153] (II) Preparation of CuO layer:

[0154] (a) Cu(hfac)2 is used as a vapor precursor (Cu precursor), nitrogen is used as a carrier gas, and the ALD valve is used to control the flow of the Cu precursor into the reaction chamber in a pulsed manner. The valve is opened for 1 second, and the vapor precursor stays in the reaction chamber for 1 second. A gas-curing reaction occurs on the surface of the exposed PET polymer film, causing the Cu precursor to be adsorbed on the substrate surface.

[0155] (b) N2 gas at 3000 sccm was introduced into the reaction chamber for 30 s to remove excess precursor vapor and reaction by-products.

[0156] (c) 1000 sccm O3 was introduced into the reaction chamber for 10s to continue reacting with the Cu precursor adsorbed on the surface of the PET polymer film.

[0157] (d) N2 gas was introduced at 3000 sccm for 60 s to remove excess H2 and reaction by-products from the reaction chamber.

[0158] After steps (a) to (d) were cycled 20 times, a 1 nm thick CuO layer was formed on the surface of the PET polymer film.

[0159] (III) Preparation of Ag layer:

[0160] (e) Ag(piv)PEt3 is used as a gas-phase precursor, nitrogen is used as a carrier gas, and the ALD valve is used to control the gas-phase precursor to enter the reaction chamber in a pulsed form. The valve is opened for 1 second, and the gas-phase precursor stays in the reaction chamber for 5 seconds. A gas-curing reaction occurs on the surface of the exposed CuO layer, causing the Ag precursor to be adsorbed on the surface of the CuO layer.

[0161] (f) N2 gas at 3000 sccm was introduced into the reaction chamber for 30 s to remove excess precursor vapor and reaction by-products.

[0162] (g) NH3 plasma is introduced for 5s to continue reacting with the Ag precursor adsorbed on the surface of the CuO layer.

[0163] (k) N2 gas was introduced at 3000 sccm for 10 s to remove excess NH3 and reaction by-products from the reaction chamber.

[0164] After steps (e) to (k) are cycled 500 times, a 4 nm thick Ag layer is formed on the surface of the CuO layer, and a light-transmitting metal material is obtained.

[0165] Comparative Example 11

[0166] This comparative example discloses a light-transmitting material, which differs from comparative example 10 only in that TDMATi is used instead of Cu(hfac)2 in step (II), and after steps (a) to (d) are cycled 20 times, a 1 nm thick TiO2 layer is formed on the surface of the PET polymer film. The rest of the process is the same as comparative example 10.

[0167] Comparative Example 12

[0168] This comparative example discloses a light-transmitting material, which differs from comparative example 10 only in that TMA is used instead of Cu(hfac)2 in step (II), and after steps (a) to (d) are cycled 10 times, a 1 nm thick Al2O3 layer is formed on the surface of the PET polymer film. The rest of the process is the same as comparative example 10.

[0169] Test example

[0170] This test example conducted performance tests on the translucent metal materials, composite materials, and translucent materials obtained in the examples and comparative examples, specifically including: conductivity test, transmittance test, and reflectivity test. The test results are shown in Tables 1 and 2 below. The test methods are as follows:

[0171] Conductivity test: Using the four-probe test technology, four equally spaced probes are inserted into the sample surface. A constant current source provides a suitably small current I to the two outer probes, and then the voltage V between the two middle probes is measured to obtain the experimental result of resistivity.

[0172] Light transmittance testing: Spectrophotometry is used based on the Lambert-Beer law. When a parallel beam of monochromatic light is perpendicularly irradiated onto a uniform sample, the degree of light absorption is proportional to the sample's concentration and the optical path length. Light transmittance is determined by measuring the ratio of the light intensity transmitted through the sample to the incident light intensity at visible light wavelengths (380-780nm).

[0173] Reflectivity testing: A light source is collimated into parallel beams and focused onto the sample surface through a microscope objective. The reflected light from the sample surface enters the imaging lens assembly and is ultimately split into two beams by a beamsplitter. One beam forms a sharp spot on the CCD for focusing. The other beam enters the sensor. Analysis software calculates the ratio of the reflected energy to the reference energy based on the data received by the sensor, deriving the reflectivity of the sample surface.

[0174] Table 1 Test results of film system on PET substrate

[0175]

[0176] It can be seen from Examples 1 to 2 and Comparative Examples 8 to 9 that a 1-5 nm thick Cu film cannot be continuously formed on the PET surface and cannot serve as a nucleation base layer for Ag to form an ultra-thin conductive layer.

[0177] It can be seen from Examples 1 to 2 and Comparative Examples 10 to 12 that the 1 nm CuO film, TiO2 film, and Al2O3 film cannot serve as the nucleation base layer for Ag, and the Ag layer cannot wet and form a continuous ultra-thin conductive layer on the oxide surface.

[0178] Table 2 Test results of film systems on glass substrates

[0179]

[0180] Figure 1 This is the reflectivity test result of Example 3. In the above Examples 3 and 4, the antireflection films have insulating layers above and below them, and therefore are not conductive.

[0181] Unless otherwise specified, the term "about" as used herein means that the tolerance is within a range of ±2%. For example, "about 100" is actually 100 ± 2% × 100. "Normal temperature" or "room temperature" as used herein, unless otherwise specified, means approximately 20°C to 30°C. The term "between" as used herein is inclusive; for example, "between 2 and 3" includes both the endpoints 2 and 3.

[0182] While the embodiments of the present invention have been described in detail above with reference to the accompanying drawings, the present invention is not limited to the embodiments described above. Various modifications may be made within the scope of knowledge possessed by a person skilled in the art without departing from the spirit of the present invention. Furthermore, the embodiments of the present invention and the features thereof may be combined with one another unless there is a conflict.

Claims

1. A light-transmitting metal material, characterized in that: The light-transmitting metal material includes a first metal layer and a second metal layer arranged in sequence, the first metal layer includes at least one of Pt and Ru, and the second metal layer includes silver; The light-transmitting metal material is prepared by the following method: S1-1, in the atomic layer deposition system chamber, activating the substrate layer using plasma; S1-2-1, pulse precursor II into the atomic layer deposition system chamber at 100-200°C and purge with N2; S1-2-2, pulse reactant II into the atomic layer deposition system chamber and purge with N2; S1-2-3, repeat steps S1-2-1 and S1-2-2 m times to form a first metal layer on the surface of the substrate layer; m is an integer, 0 <m<200; S2-1, pulse precursor I into the atomic layer deposition system chamber at 100-200°C and purge with N2; S2-2, reactant I is pulsed into the atomic layer deposition system chamber and N2 is introduced for purging; S2-3, repeating steps S2-1 and S2-2 n times to form a second metal layer on the surface of the first metal layer; The precursor I includes at least one of Ag(piv)PEt3, Ag(piv)PBu3, Ag(fod)PEt3 or Ag(hfac)COD, and the reactant I includes at least one of H2O, O2, O3, NH3, H2, NH3 plasma, H2 plasma or O2 plasma; The precursor II includes at least one of RuCp2, Ru(EtCp)2, (EtCp)Ru(MeCp), Ru(tBu-Me-amd)2 (CO)2, Ru(DMPD)2, Ru(DMBD)CO3, MeCpPtMe3, and Pt(acac)2, and the reactant II includes at least one of H2O, O2, O3, NH3, H2, NH3 plasma, H2 plasma, or O2 plasma.

2. The light-transmitting metal material according to claim 1, characterized in that: The thickness of the first metal layer is less than 20 nm; and / or the thickness of the second metal layer is less than 20 nm.

3. The light-transmitting metal material according to claim 1, characterized in that: The conductivity of the film formed by the first metal layer and the second metal layer is less than 20 μΩ·cm; and / or the transmittance of the film formed by the first metal layer and the second metal layer is greater than 95%.

4. An ultra-low reflection anti-reflection film, characterized in that: The light-transmitting metal material comprises the light-transmitting metal material according to any one of claims 1 to 3.

5. Use of the light-transmitting metal material according to any one of claims 1 to 3 or the ultra-low reflection anti-reflection film according to claim 4 in optical devices, optoelectronic devices or flexible electronic devices.

6. An optical device, characterized in that: The light-transmitting metal material comprises the light-transmitting metal material according to any one of claims 1 to 3.

7. A flexible electronic device, characterized in that: The light-transmitting metal material comprises the light-transmitting metal material according to any one of claims 1 to 3.

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