Exposure apparatus, determination method, article manufacturing method, storage medium, and computer program product

Abstract

The invention relates to an exposure apparatus, a determination method, an article manufacturing method, a storage medium, and a computer program product. Provided is an exposure device for exposing a substrate via an original plate, the exposure device comprising: a projection optical system for projecting a pattern of the original plate onto the substrate; an NA diaphragm capable of changing the numerical aperture of the projection optical system; a temperature adjustment unit that adjusts the temperature of a space inside the projection optical system and the temperature of an optical member disposed inside by supplying and discharging a gas to and from the space; and a control unit that changes conditions relating to the supply and discharge of the gas by the temperature adjustment unit in accordance with the change of the numerical aperture by the NA diaphragm.

Description

Technical Field

[0001] The present invention relates to an exposure apparatus, a determination method, a method for manufacturing an article, a storage medium, and a computer program product. Background Art

[0002] In a photolithography process for manufacturing display devices such as televisions, smartphones, and tablet terminals, an exposure apparatus is used to transfer a pattern of a reticle (mask or intermediate mask) to a substrate on which a photoresist (photosensitive agent) is disposed.

[0003] In recent years, in order to improve the productivity of exposure apparatuses, there has been a tendency to increase the illuminance of exposure light. Therefore, a technique for reducing changes in optical performance caused by exposure light irradiating an optical system has been proposed in Japanese Patent Application Laid-Open No. 2016-95412. Japanese Patent Application Laid-Open No. 2016-95412 discloses an exposure apparatus including: a supply unit that supplies a cooling gas to an optical element disposed near a pupil position of a projection optical system; and a control unit that controls the supply unit so as to change the direction of supplying the cooling gas according to the temperature distribution of the optical element.

[0004] On the other hand, in order to manufacture various display devices and the like with the same apparatus, in an exposure apparatus, it is required to transfer patterns of various sizes from a very fine pattern of about 1 μm to a relatively large pattern of about several tens of μm to a substrate. Therefore, in the exposure apparatus, by changing the numerical aperture (NA) of the projection optical system, patterns of various sizes can be dealt with.

[0005] In an exposure apparatus, regarding resolution and depth of focus, assuming k1 and k2 are constants, using Rayleigh's formula, they are represented by the following formulas (1) and (2).

[0006] Resolution = k1 × λ / NA... (Formula 1)

[0007] Depth of focus = k2 × λ / NA 2 ... (Formula 2)

[0008] Therefore, it is known that for a pattern with a large size, it is effective to decrease the NA and increase the depth of focus, and for a pattern with a small size, it is effective to increase the NA. Summary of the Invention

[0009] Problems to be Solved by the Invention

[0010] However, if the opening diameter of a diaphragm disposed near the pupil position of the optical system is changed in order to change the NA of the optical system, then according to the size of the opening diameter, the flow of the cooling gas for the optical element changes, and there is a possibility of causing a decrease in optical performance due to fluctuations in the cooling effect.

[0011] The present invention provides a technique that is advantageous for suppressing a degradation in the optical performance of a projection optical system.

[0012] Solution to the problem

[0013] An exposure apparatus according to one aspect of the present invention is characterized in that exposure of a substrate is performed via a reticle, and the exposure apparatus includes: a projection optical system that projects a pattern of the reticle onto the substrate; an NA aperture that can change a numerical aperture of the projection optical system; a temperature adjustment unit that adjusts a temperature of a space inside the projection optical system and a temperature of an optical member disposed inside the space by supplying and discharging a gas to and from the space; and a control unit that changes conditions related to the supply and discharge of the gas performed by the temperature adjustment unit according to a change in the numerical aperture performed by the NA aperture.

[0014] A determination method according to another aspect of the present invention is characterized in that the determination method determines conditions related to the supply and discharge of a gas in a temperature adjustment unit that adjusts a temperature of a space inside a projection optical system that projects a pattern of a reticle onto a substrate and a temperature of an optical member disposed inside the space by supplying and discharging the gas to and from the space, and the determination method includes the following steps: a first step of measuring the optical performance of the projection optical system while changing the conditions in a state where a plurality of different numerical apertures are respectively set for the projection optical system by an NA aperture that can change the numerical aperture of the projection optical system; and a second step of determining the conditions based on an optical performance difference between the optical performances measured in the state where the plurality of numerical apertures are respectively set.

[0015] A determination method according to still another aspect of the present invention is characterized in that the determination method determines conditions related to the supply and discharge of a gas in a temperature adjustment unit that adjusts a temperature of a space inside a projection optical system that projects a pattern of a reticle onto a substrate and a temperature of an optical member disposed inside the space by supplying and discharging the gas to and from the space, and the determination method includes the following steps: a first step of measuring the optical performance of the projection optical system for each of a plurality of patterns that are different from each other in the length direction while changing the conditions in a state where a plurality of different numerical apertures are respectively set for the projection optical system by an NA aperture that can change the numerical aperture of the projection optical system; and a second step of determining the conditions for each of the plurality of numerical apertures based on an optical performance difference between the optical performances measured for the plurality of patterns.

[0016] The decision method according to another aspect of the present invention is characterized in that the decision method determines conditions related to the supply and discharge of gas in the temperature adjustment unit, and the temperature adjustment unit adjusts the temperature of the space inside the projection optical system that projects the pattern of the original plate onto the substrate and the temperature of the optical member disposed inside the space by supplying and discharging the gas. The decision method has the following steps: a first step of calculating the temperature distribution generated in the space and the optical member by applying a heat load to the projection optical system for each of a plurality of different numerical apertures set for the projection optical system; a second step of calculating the optical performance of the projection optical system for each of the plurality of numerical apertures based on the refractive index distribution in the space and the optical member obtained from the temperature distribution calculated in the first step; and a third step of determining the conditions based on the optical performance difference between the optical performances of the respective numerical apertures calculated in the second step.

[0017] The method for manufacturing an article according to another aspect of the present invention is characterized in that the method for manufacturing the article has the following steps: a step of exposing a substrate using the above-described exposure apparatus; and a step of developing the exposed substrate.

[0018] The storage medium according to another aspect of the present invention is a computer-readable storage medium storing a computer program, and when the computer program is executed by a processor, each step of the above-described decision method is implemented.

[0019] The program product according to another aspect of the present invention is a computer program product including a computer program, and when the computer program is executed by a processor, each step of the above-described decision method is implemented.

[0020] A further object or other aspects of the present invention will be clarified by the embodiments described below with reference to the accompanying drawings.

[0021] Effects of the Invention

[0022] According to the present invention, for example, a technique that is advantageous for suppressing a decrease in the optical performance of a projection optical system can be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 It is a schematic diagram showing the structure of an exposure apparatus according to one aspect of the present invention.

[0024] Figure 2 It is a diagram for explaining the focus measurement performed in the exposure apparatus.

[0025] Figure 3A and Figure 3BIt is a diagram for explaining the focus measurement performed in the exposure apparatus.

[0026] Figure 4 It is a diagram showing the structures of the temperature adjustment unit and the convex mirror unit.

[0027] Figure 5 It is a diagram showing an example of the temperature adjustment conditions in the temperature adjustment unit.

[0028] Figure 6 It is a flowchart for explaining the determination method for determining the temperature adjustment conditions.

[0029] Figure 7 It is a diagram showing the result of the focus measurement.

[0030] Figure 8 It is a diagram showing an example of the result of the focus measurement.

[0031] Figure 9 It is a flowchart for explaining the determination method for determining the temperature adjustment conditions.

[0032] Figure 10 It is shown based on Figure 6 It is a diagram showing the result obtained from the process study of the determination method shown.

[0033] Figure 11 It is a flowchart for explaining the determination method for determining the temperature adjustment conditions.

[0034] Figure 12A and Figure 12B It is a diagram for explaining the prior art.

[0035] Figure 13A and Figure 13B It is a diagram for explaining the prior art. Detailed Description of the Embodiment

[0036] Hereinafter, the embodiments will be described in detail with reference to the accompanying drawings. It should be noted that the following embodiments do not limit the invention described in the claims. A plurality of features are described in the embodiments, but these plurality of features are not necessarily all features essential to the invention. In addition, the plurality of features can be arbitrarily combined. Also, in the accompanying drawings, the same or similar structures are denoted by the same reference numerals, and repeated explanations are omitted.

[0037] Figure 1FIG. 0 is a schematic diagram showing the structure of an exposure apparatus 1000 according to an aspect of the present invention. The exposure apparatus 1000 is used in the manufacturing processes of display devices such as televisions, smartphones, and tablet terminals, and devices such as semiconductor elements, and is a lithography apparatus that forms a pattern on a substrate by exposing the substrate via a reticle (mask or intermediate mask). In the present embodiment, the exposure apparatus 1000 performs a process (exposure process) of projecting the pattern formed on the reticle onto the substrate via a projection optical system and transferring the pattern of the reticle to the substrate.

[0038] The exposure apparatus 1000 is specifically embodied as, for example, a so-called step-and-repeat type exposure apparatus (step exposure apparatus) that fixes the reticle and transfers the pattern of the reticle to the substrate. In addition, the exposure apparatus 1000 may be specifically embodied as a so-called step-and-scan type exposure apparatus (scan exposure apparatus) that scans the reticle and the substrate synchronously with each other in the scanning direction while transferring the pattern of the reticle to the substrate.

[0039] In the present specification and the accompanying drawings, directions are represented in an XYZ coordinate system in which the direction parallel to the plane on which the substrate is disposed is the XY plane. The directions parallel to the X axis, Y axis, and Z axis in the XYZ coordinate system are defined as the X direction, Y direction, and Z direction, respectively, and the rotations about the X axis, Y axis, and Z axis are defined as θX, θY, and θZ, respectively.

[0040] As Figure 1 shown, the exposure apparatus 1000 includes an illumination optical system 100, a reticle stage MS, a projection optical system 200, a substrate stage PS, a control unit 300, a console 400, and a temperature adjustment unit 500.

[0041] The illumination optical system 100 is an optical system that illuminates the reticle M with light from a light source 101. The light source 101 uses, for example, a light source that emits ultraviolet light such as an ultra-high pressure mercury lamp, but may also use a KrF excimer laser, an ArF excimer laser, or the like. The light (exposure light) emitted from the light source 101 travels in the Figure 1 direction indicated by the arrow in FIG.

[0042] The wavelength filter 102 has a function of transmitting light in a predetermined wavelength range and blocking light in a wavelength range other than the predetermined range. The ND filter 103 has a function of adjusting the intensity of the light emitted from the light source 101 to an appropriate intensity. The optical integrator 104 is an optical member for making the illuminance distribution in the pattern plane of the reticle M uniform. The light transmitted through the optical integrator 104 is condensed by a condenser lens 105.

[0043] A part of the light that has passed through the condenser lens 105 is split by the beam splitter 106 and incident on the detector 107 that detects the intensity (light quantity) of the detection light. The detector 107 is provided to monitor whether the intensity of the light illuminating the original plate M is within a predetermined range and to stabilize the intensity of the light illuminating the original plate M by controlling the light source 101 as needed.

[0044] The masking blade 108 is a blade for setting the range of the original plate M illuminated by the light from the light source 101 (the illumination area on the original plate). The lens 109 is a lens for imaging the illumination area set by the masking blade 108 on the original plate M. The light reflected by the mirror 110 illuminates the original plate M while maintaining a predetermined angular distribution.

[0045] The original plate M is driven (scanned) in the X direction and the Y direction while being placed on the original plate stage MS. In addition, a flat glass FM provided with marks for focus measurement is arranged on the original plate stage MS. The original plate M includes a pattern surface on which a pattern to be transferred to the substrate P is drawn. The pattern of the original plate M is transferred to the substrate P provided with a photosensitive agent via the projection optical system 200.

[0046] The projection optical system 200 is an optical system that projects the pattern of the original plate M onto the substrate P. The projection optical system 200 is configured as an Offner-type optical system in the present embodiment. The projection optical system 200 includes a correction optical element 201, a trapezoidal mirror 202, a concave mirror 203, a meniscus lens 204, a convex mirror 205, and a NA aperture 206 as a plurality of optical members (optical elements).

[0047] The correction optical element 201 is an optical element for correcting aberrations such as coma, astigmatism, and distortion. The trapezoidal mirror 202 reflects the light that has passed through the correction optical element 201 toward the concave mirror 203. The light reflected by the concave mirror 203 passes through the meniscus lens 204, is reflected by the convex mirror 205, and passes through the meniscus lens 204 again.

[0048] The NA aperture 206 is arranged at the pupil position (near the pupil position) of the projection optical system 200. In the present embodiment, it is arranged between the meniscus lens 204 and the convex mirror 205. The NA aperture 206 is composed of a variable aperture capable of changing the opening diameter. The NA aperture 206 has a function of changing the numerical aperture (NA) of the projection optical system 200 by changing the opening diameter. In addition, in the present embodiment, the meniscus lens 204, the convex mirror 205, and the NA aperture 206 constitute the convex mirror unit 210. The temperature of the space MSP inside the convex mirror unit 210 and the temperature of the optical members arranged inside the convex mirror unit 210 are adjusted (temperature-controlled) by the temperature control unit 500.

[0049] The light that has passed through the meniscus lens 204 is reflected by the concave mirror 203 and the trapezoidal mirror 202 and reaches the substrate P. The substrate P is driven (scanned) in the X direction and the Y direction while being placed on the substrate stage PS, and is also driven in the Z direction as needed. In addition, a sensor FS for focus measurement is arranged on the substrate stage PS.

[0050] The control unit 300 is constituted by a computer (information processing device) including a CPU, a memory, etc., for example. The control unit 300 comprehensively controls each part of the exposure apparatus 1000 according to a program stored in a storage unit or the like to operate the exposure apparatus 1000. The console 400 is a unit for an operator (user) to operate the exposure apparatus 1000. If the operator inputs setting values such as the NA of the projection optical system 200 via the console 400, the setting values are sent to the control unit 300. The control unit 300 sends temperature adjustment conditions for adjusting the temperature inside the projection optical system 200 and the temperature of the optical members arranged inside the projection optical system 200 (temperature adjustment) to the temperature adjustment unit 500 based on the set value of the NA of the projection optical system 200 obtained from the console 400.

[0051] The temperature adjustment unit 500 is a temperature adjustment device that adjusts the temperature of the space PSP inside the projection optical system 200 and the temperature of the optical members arranged inside the projection optical system 200 by supplying and discharging gas to and from the space PSP inside the projection optical system 200 via the supply port and the discharge port.

[0052] Refer to Figure 2 、 Figure 3A and Figure 3B , as an example of a method for measuring and evaluating the optical performance of the projection optical system 200, the focus measurement performed in the exposure apparatus 1000 will be described. Figure 2 is a diagram showing the positional relationship between the reticle stage MS and the substrate stage PS when performing focus measurement. As Figure 2 shown, when performing focus measurement for evaluating the focus performance of the projection optical system 200, the position of the reticle stage MS is adjusted so that the light from the illumination optical system 100 (exposure light) irradiates the flat glass FM arranged on the reticle stage MS. The light that has passed through the flat glass FM passes through the projection optical system 200 and reaches the substrate stage PS. At this time, the position of the substrate stage PS is adjusted so that the light reaching the substrate stage PS irradiates the sensor FS for focus measurement arranged on the substrate stage PS. When performing focus measurement, the focus performance of the projection optical system 200 is measured while driving the substrate stage PS in the Z direction.

[0053] Figure 3A is a diagram showing an example of the mark for focus measurement provided on the flat glass FM. AsFigure 3A As shown, on the planar glass FM, there are provided, for example, 4 marks for focus measurement formed by patterns with a 45° difference in the length direction, the same line width, and the same pitch. Each mark includes a shielding portion (black portion) and a transmissive portion (white portion) made of chromium. In the present embodiment, the 4 marks are respectively identified by the angles (orientations) in the length direction of the patterns, and are referred to as the 0° mark, the 45° mark, the 90° mark, and the 135° mark.

[0054] In focus measurement, light is respectively irradiated onto the 4 marks provided on the planar glass FM, and the light from each of the 4 marks is made to enter the focus measurement sensor FS. Above the focus measurement sensor FS, there are provided marks identical to those provided on the planar glass FM. Specifically, above the focus measurement sensor FS, 4 marks are provided in a configuration consistent with the orientations of the patterns of the 4 marks provided on the planar glass FM. For example, the light from the 0° mark (transmissive portion) provided on the planar glass FM passes through the 0° mark (transmissive portion) provided above the focus measurement sensor FS. If the position where the mark provided on the planar glass FM is imaged via the projection optical system 200 coincides with the position of the mark provided above the focus measurement sensor FS, the amount of light of the light incident on the focus measurement sensor FS and measured is the largest.

[0055] Figure 3B is a diagram showing an example of the result of actually performing focus measurement. The vertical axis represents the amount of light measured by the focus measurement sensor FS, and the horizontal axis represents the focus position. Figure 3B It is obtained by selecting 1 mark from the 4 marks provided on the planar glass FM and plotting the amount of light measured by the focus measurement sensor FS while driving the substrate stage PS in the Z direction. Referring to Figure 3B , the focus position at which the amount of light measured by the focus measurement sensor FS is the largest can be determined (evaluated) as the best focus position. In addition, by performing focus measurement on each mark provided on the planar glass FM, the best focus position for each mark can be determined.

[0056] Hereinafter, before explaining the temperature adjustment unit 500 in the present embodiment in detail, the prior art for adjusting the temperature inside the projection optical system 200 and the temperatures of the convex mirror 205 and the meniscus lens 204 disposed near the pupil position of the projection optical system 200 will be described.

[0057] Figure 12A and Figure 12B is a diagram schematically showing the vicinity of the pupil of the projection optical system 200 to which the prior art is applied. Figure 12AIndicates a state where a high NA is set for the projection optical system 200 by increasing the opening diameter of the NA aperture 206. Figure 12B Indicates a state where a low NA is set for the projection optical system 200 by decreasing the opening diameter of the NA aperture 206. A supply port 1207 for supplying a gas for air-cooling the region (space MSP) from the meniscus lens 204 to the convex mirror 205 and a discharge port 1208 for discharging the gas for air-cooling are provided near the NA aperture 206.

[0058] As Figure 12A and Figure 12B shown, the gas supplied from the supply port 1207 forms a laminar flow along the NA aperture 206 toward the vicinity of the center and is discharged from the discharge port 1208. At this time, as Figure 12A shown, when the opening diameter of the NA aperture 206 is large, the gas supplied from the supply port 1207 diffuses when it advances a predetermined distance. On the other hand, as Figure 12B shown, when the opening diameter of the NA aperture 206 is small, the gas supplied from the supply port 1207 advances along the NA aperture 206 for a relatively long distance. Thus, the arrival distances of the gas supplied from the supply port 1207 are different when the opening diameter of the NA aperture 206 is large and when the opening diameter of the NA aperture 206 is small, and the cooling effect on the meniscus lens 204 and the convex mirror 205 varies according to the NA.

[0059] Refer to Figure 13A and Figure 13B to explain the change in focus caused by the exposure load (exposure heat) when the NA of the projection optical system 200 is different. Figure 13A is a graph showing the results of focus measurement when the NA of the projection optical system 200 is large, Figure 13B is a graph showing the results of focus measurement when the NA of the projection optical system 200 is small. In Figure 13A and Figure 13B , the vertical axis represents focus, the horizontal axis represents the time (elapsed time) from when the exposure light is incident on the projection optical system 200, and t0 is the start time of the incidence of the exposure light. The four curves represented by F0°, F45°, F90°, and F135° respectively represent the change in focus for the above-mentioned 0° mark, 45° mark, 90° mark, and 135° mark.

[0060] Refer to Figure 13A and Figure 13B, as time elapses from when the exposure light is incident on the projection optical system 200, the focus changes. This is because the meniscus lens 204 is heated by the irradiation of the exposure light, and the refractive index of the meniscus lens 204 changes according to the temperature distribution generated in the meniscus lens 204. When the NA of the projection optical system 200 is small, the gas from the supply port 1207 reaches the entire surface of the meniscus lens 204, so the temperature change of the meniscus lens 204 becomes smaller. Therefore, the change in the refractive index of the meniscus lens 204 is small, and thus, as Figure 13B shown, the change in focus also becomes smaller. On the other hand, when the NA of the projection optical system 200 is large, the gas from the supply port 1207 is difficult to uniformly cool the entire surface of the meniscus lens 204, and the temperature change of the meniscus lens 204 becomes larger. Therefore, the change in the refractive index of the meniscus lens 204 becomes larger, and as Figure 13A shown, the change in focus also becomes larger. Thus, when the NA of the projection optical system 200 is large, compared with the case where the NA of the projection optical system 200 is small, there is a tendency for the focus difference caused by the change in focus and the orientation of the mark to become larger.

[0061] As problems with such a phenomenon, two problems can be cited. The first problem is that in Figure 13A and Figure 13B , as shown by Shift, when the NA of the projection optical system 200 is large, the change in focus is larger compared with the case where the NA of the projection optical system 200 is small. The second problem is that in Figure 13A and Figure 13B , as shown by ΔF, the focus deviation becomes larger among the four marks (0° mark, 45° mark, 90° mark, and 135° mark) with different lengths in the pattern direction.

[0062] Therefore, in the present embodiment, the above two problems are solved, and a technique is provided that is advantageous for suppressing a decrease in the optical performance of the projection optical system 200, particularly a decrease in the focusing performance, caused by fluctuations in the cooling effect (temperature adjustment effect) of the temperature adjustment unit 500.

[0063] Referring to Figure 4 , the temperature adjustment unit 500 in the present embodiment will be described in detail. Figure 4 is a diagram showing the structures of the temperature adjustment unit 500 and the convex mirror unit 210. The temperature adjustment unit 500 includes an air conditioner 501, supply pipes 505, 505a, 505b, and 505c, a plurality of supply ports 207a, 207b, and 207c, and a temperature adjustment control unit 508. In addition, the temperature adjustment unit 500 includes a temperature adjustment supply unit 510, a plurality of discharge ports 208a, 208b, and 208c, discharge pipes 513a, 513b, 513c, and 516, and a discharge fan 515.

[0064] In the air conditioner 501, a gas whose temperature is stabilized by a cooler (not shown) is stored as a refrigerant. The air conditioner 501 has a function of controlling the temperature of the stored gas, and can control the temperature of the gas to a desired temperature as needed. The gas with a stabilized temperature is supplied from the air conditioner 501 to the supply pipe 505. The supply pipe 505 includes, for example, a plurality of supply pipes 505a, 505b, and 505c through which the gas from the air conditioner 501 passes.

[0065] The temperature adjustment control unit 508 obtains information related to the opening diameter of the NA aperture 206, that is, information related to the NA of the projection optical system 200, from the control unit 300, and controls the temperature adjustment supply unit 510 according to the conditions (temperature adjustment conditions) related to the supply and discharge of the gas of the temperature adjustment unit 500. In the present embodiment, the temperature adjustment control unit 508 opens and closes the valves 511a, 511b, and 511c provided corresponding to the supply pipes 505a, 505b, and 505c, respectively. In addition, the temperature adjustment control unit 508 operates the mass flow controllers 512a, 512b, and 512c that are used to adjust the flow rates of the gases flowing in the supply pipes 505a, 505b, and 505c, respectively. The mass flow controllers 512a, 512b, and 512c can independently adjust the flow rates of the gases after temperature adjustment under the control of the temperature adjustment control unit 508. The gases after temperature adjustment supplied from the air conditioner 501 are sent to the internal space MSP of the convex lens unit 210 via the supply pipes 505a, 505b, and 505c. Supply ports 207a, 207b, and 207c are connected to the supply pipes 505a, 505b, and 505c, respectively.

[0066] In order to discharge (cool) heat from the meniscus lens 204, the convex lens 205, and the space MSP between the meniscus lens 204 and the convex lens 205, the supply ports 207a, 207b, and 207c are provided inside the convex lens unit 210. In the present embodiment, the supply ports 207a, 207b, and 207c are provided around the NA aperture 206, and are supply ports for supplying (blowing) the gas from the air conditioner 501 to the space MSP.

[0067] By opening and closing the valves 511a, 511b, and 511c by the temperature adjustment control unit 508, it is possible to independently control (set) whether or not to supply gas from the supply ports 207a, 207b, and 207c, respectively (whether or not to supply gas). Furthermore, it is also possible to independently control (set) the supply amounts of the gases supplied from the supply ports 207a, 207b, and 207c via the mass flow controllers 512a, 512b, and 512c, respectively.

[0068] In addition, actuators 209a, 209b, and 209c for driving supply ports 207a, 207b, and 207c are respectively provided at the supply ports 207a, 207b, and 207c. Therefore, the positions of the supply ports 207a, 207b, and 207c (the positions where the supply gas is located) can be independently controlled (set) via the actuators 209a, 209b, and 209c. Similarly, the angles of the supply ports 207a, 207b, and 207c (the angles of the directions of the supply gas) can be independently controlled (set) via the actuators 209a, 209b, and 209c.

[0069] The discharge ports 208a, 208b, and 208c are discharge ports for discharging the gas supplied from the supply ports 207a, 207b, and 207c to the space MSP. The discharge ports 208a, 208b, and 208c are provided inside the convex mirror unit 210 and are provided around the NA diaphragm 206 in the present embodiment.

[0070] Actuators 209d, 209e, and 209f for driving the discharge ports 208a, 208b, and 208c are respectively provided at the discharge ports 208a, 208b, and 208c. Therefore, the positions of the discharge ports 208a, 208b, and 208c (the positions where the discharged gas is located) can be independently controlled (set) via the actuators 209d, 209e, and 209f. Similarly, the angles of the discharge ports 208a, 208b, and 208c (the angles of the directions of the discharged gas) can be independently controlled (set) via the actuators 209d, 209e, and 209f.

[0071] Discharge pipes 513a, 513b, and 513c are respectively connected to the discharge ports 208a, 208b, and 208c. In the present embodiment, the temperature adjustment control unit 508 opens and closes valves 514a, 514b, and 514c provided corresponding to the discharge pipes 513a, 513b, and 513c respectively. In this way, by the temperature adjustment control unit 508 opening and closing the valves 514a, 514b, and 514c, it is possible to independently control (set) whether or not gas is discharged from the discharge ports 208a, 208b, and 208c respectively (whether or not to discharge gas). Moreover, it is also possible to independently control (set) the discharge amounts of the gas discharged from the discharge ports 208a, 208b, and 208c respectively.

[0072] The gas discharged from the space MSP via the discharge ports 208a, 208b, and 208c reaches the discharge fan 515 through the discharge pipes 513a, 513b, and 513c. The gas reaching the discharge fan 515 returns to the air conditioner 501 through the discharge pipe 516. The discharge fan 515 can adjust the discharge performance and can maintain a sufficient discharge amount so that the gas containing heat does not stay in the space MSP inside the convex mirror unit 210.

[0073] Next, a method for determining the temperature adjustment conditions, which are the conditions related to the supply and discharge of gas in the temperature adjustment unit 500, will be described. In the present embodiment, the NA of the projection optical system 200 set by the NA aperture 206 is set to two NA conditions, i.e., the first numerical aperture NA1 and the second numerical aperture NA2, and the second numerical aperture NA2 is set to a numerical aperture larger than the first numerical aperture NA1. In addition, the number of temperature adjustment conditions set for the temperature adjustment unit 500 is set to n types.

[0074] Figure 5 It is a diagram showing an example of the temperature adjustment conditions in the temperature adjustment unit 500. Here, for the sake of simplicity of explanation, the supply ports for supplying gas to the space MSP inside the convex mirror unit 210 are set to three supply ports a, b, and c, and the supply amounts of the gas supplied from the supply ports a, b, and c are set to three types: 0, 1, and 2. Moreover, on the premise of symmetric gas supply, the number of temperature adjustment conditions set for the temperature adjustment unit 500 is set to nine types (n = 9). However, in reality, the number of supply ports, the supply amount of gas, the symmetry of gas supply, etc. are not limited to these. For example, the temperature adjustment conditions may also be whether gas is supplied from multiple supply ports respectively, whether gas is discharged from multiple discharge ports respectively, the supply amount of gas supplied from multiple supply ports respectively, the discharge amount of gas discharged from the multiple discharge ports respectively, etc. In addition, the temperature adjustment conditions may also be the positions of the multiple supply ports, the positions of the multiple discharge ports, the angles of the multiple supply ports, the angles of the multiple discharge ports, the supply temperature of the gas, etc. In this way, the temperature adjustment conditions include at least one of these conditions.

[0075] Figure 6 It is a flowchart for explaining the method for determining the temperature adjustment conditions, which are the conditions related to the supply and discharge of gas in the temperature adjustment unit 500. This determination method is executed, for example, by the control unit 300 included in the exposure apparatus 1000.

[0076] In S102, the NA of the projection optical system 200 is set to the first numerical aperture NA1 using the NA aperture 206.

[0077] In S103, the temperature adjustment conditions in the temperature adjustment unit 500 are set to the first temperature adjustment condition (Figure 5 Under the temperature adjustment condition "NO.1" shown in the figure, while the exposure light is incident on the projection optical system 200 and an exposure load (thermal load) is applied, the focus measurement for measuring the change in focus is performed. In the present embodiment, the focus measurement is continuously performed from the start time t0 of the incidence of the exposure light to the time t, and the change amount of the focus is set to the change amount at the time t. It should be noted that the time t is set according to the time (for example, 10 hours) when the change in focus reaches an equilibrium state. In addition, for a plurality of patterns having different lengths in the length direction, specifically, for Figure 3A the 0° mark, 45° mark, 90° mark, and 135° mark shown in the figure, the focus measurement is performed respectively.

[0078] Figure 7 is a graph showing the results of the focus measurement obtained in S103. In Figure 7 , the vertical axis represents the focus, and the horizontal axis represents the time (elapsed time) from the incidence of the exposure light on the projection optical system 200. The four curves represented by F0°, F45°, F90°, and F135° respectively represent the changes in focus with respect to the above-mentioned 0° mark, 45° mark, 90° mark, and 135° mark. In addition, the average of F0°, F45°, F90°, and F135° is set as Shift, and the deviation of F0°, F45°, F90°, and F135° is set as ΔF.

[0079] In S104, the temperature adjustment conditions in the temperature adjustment unit 500 are sequentially set to the second to the nth temperature adjustment conditions (n types of temperature adjustment conditions are set), and for each temperature adjustment condition, the focus measurement is performed in a state where an exposure load (thermal load) is applied.

[0080] In S105, the results of the focus measurement obtained in S103 and S104 are saved, that is, the results of n focus measurements for n types of temperature adjustment conditions.

[0081] In S106, based on the results of the n focus measurements saved in S105, the temperature adjustment condition at the first numerical aperture NA1 is determined. Specifically, the temperature adjustment condition (NO.n1) corresponding to the result in which the focus difference (optical performance difference) based on the 0° mark, 45° mark, 90° mark, and 135° mark in the results of the n focus measurements is the smallest is set as the temperature adjustment condition at the first numerical aperture NA1.

[0082] In S107, the NA of the projection optical system 200 is set to the second numerical aperture NA2 by using the NA diaphragm 206.

[0083] In S108, similarly to S103, the temperature adjustment condition in the temperature adjustment unit 500 is set to the first temperature adjustment condition, and in a state where exposure light is made incident on the projection optical system 200 and an exposure load (thermal load) is applied, focus measurement for measuring (changes in) focus is performed.

[0084] In S109, similarly to S104, the temperature adjustment conditions in the temperature adjustment unit 500 are sequentially set to the second to the nth temperature adjustment conditions (n types of temperature adjustment conditions are set), and for each temperature adjustment condition, focus measurement is performed in a state where an exposure load (thermal load) is applied.

[0085] In S110, the results of the focus measurement obtained in S108 and S109, that is, the results of n times of focus measurement for n types of temperature adjustment conditions are saved.

[0086] Figure 8 It is a diagram showing an example of the results of the focus measurement saved in S105 and S110, that is, an example of the results of the focus measurement for the first numerical aperture NA1 and the second numerical aperture NA2 respectively. In the present embodiment, as Figure 8 shown, for the first numerical aperture NA1 and the second numerical aperture NA, the results of 9 times of focus measurement for 9 types of temperature adjustment conditions for each mark (0° mark, 45° mark, 90° mark, and 135° mark) are obtained respectively.

[0087] In S111, based on the results of n times of focus measurement saved in S105 and S110 respectively ( Figure 8 ), the temperature adjustment condition under the second numerical aperture NA2 is determined. Specifically, the temperature adjustment condition corresponding to the result that is closest to the result of the focus measurement corresponding to the temperature adjustment condition (NO.n1) under the first numerical aperture NA1 among the results of n times of focus measurement for the second numerical aperture NA2 is set as the temperature adjustment condition under the second numerical aperture NA2. In other words, the temperature adjustment condition under the second numerical aperture NA2 is determined in such a way that the focus difference between the focus in the equilibrium state before changing the NA of the projection optical system 200 (NA1) and the focus in the equilibrium state after changing the NA of the projection optical system 200 (NA2) becomes the minimum.

[0088] In the present embodiment, for example, “NO.n2’” is used as a variable representing the number (NO.) of the temperature adjustment condition. Then, the evaluation criterion ΔF(NA1 - NA2) shown in the following formula 3 is obtained.

[0089] ΔF(NA2 - NA1)=sqrt{(F(0°, NA2, NO.n2’)-(F(0°, NA1, NO.n1)) 2+ (F(45°, NA2, NO.n2') - (F(45°, NA1, NO.n1)) 2 + (F(90°, NA2, NO.n2') - (F(90°, NA1, NO.n1)) 2 + (F(135°, NA2, NO.n2') - (F(135°, NA1, NO.n1)) 2 )…(Equation 3)

[0090] In Equation 3, the condition for the evaluation criterion ΔF(NA2 - NA1) to have the minimum value is the condition for the optical performance difference (focus difference) between the first numerical aperture NA1 and the second numerical aperture NA2 to be the smallest, and this temperature adjustment condition is set as the temperature adjustment condition (NO.n2) at the second numerical aperture NA2.

[0091] Thus, in the present embodiment, in a state where different NA1 and NA2 are respectively set for the projection optical system 200, while changing the temperature adjustment condition, the optical performance (focus) of the projection optical system 200 is measured (S101 to S105, S107 to S110 (first process)). Then, based on the optical performance difference (focus difference) between the measured optical performances, the temperature adjustment condition in the temperature adjustment unit 500 is determined in such a way that the optical performance difference (focus difference) between the first numerical aperture NA1 and the second numerical aperture NA2 is the smallest (S106, S111 (second process)). Thereby, even when the NA of the projection optical system 200 is changed, it is possible to suppress a decrease in the optical performance of the projection optical system 200, particularly a decrease in the focusing performance, caused by a change in the cooling effect (temperature adjustment effect) of the temperature adjustment unit 500.

[0092] In addition, for the first numerical aperture NA1 and the second numerical aperture NA2, the temperature adjustment conditions in the temperature adjustment unit 500 may be determined in such a way that the optical performance difference between the optical performances (focus) for each mark (0° mark, 45° mark, 90° mark, 135° mark) is the smallest. In other words, the temperature adjustment conditions are determined in such a way that the focus difference between the focuses for each mark is the smallest, respectively, in the equilibrium state before changing the NA of the projection optical system 200 (NA1) and in the equilibrium state after changing the NA of the projection optical system 200 (NA2).

[0093] Figure 9 It is a flowchart for explaining a method for determining the temperature adjustment conditions, which are conditions related to the supply and discharge of gas in the temperature adjustment unit 500, for each NA of the projection optical system 200. This determination method is executed, for example, by the control unit 300 included in the exposure apparatus 1000. It should be noted that for S202 to S205 and S207 to S210, since they are related toFigure 6 S102 to S105 and S107 to S110 shown are the same, so the detailed description here is omitted.

[0094] In S206, based on the results of the n - time focus measurements saved in S205, the temperature adjustment conditions at the first numerical aperture NA1 are determined. Specifically, the temperature adjustment conditions corresponding to the result in the n - time focus measurement results where the focus difference (optical performance difference) based on the 0° mark, 45° mark, 90° mark, and 135° mark is the smallest are set as the temperature adjustment conditions at the first numerical aperture NA1.

[0095] In S211, based on the results of the n - time focus measurements saved in S210, the temperature adjustment conditions at the second numerical aperture NA2 are determined. Specifically, the temperature adjustment conditions corresponding to the result in the n - time focus measurement results where the focus difference (optical performance difference) based on the 0° mark, 45° mark, 90° mark, and 135° mark is the smallest are set as the temperature adjustment conditions at the second numerical aperture NA2.

[0096] In this way, in a state where different NA1 and NA2 are respectively set for the projection optical system 200, while changing the temperature adjustment conditions, the optical performance (focus) of the projection optical system 200 for each mark is measured (S202 - S205, S207 - 210 (the first process)). Then, for the first numerical aperture NA1 and the second numerical aperture NA2, based on the optical performance difference (focus difference) between the measured optical performances, the temperature adjustment conditions in the temperature adjustment unit 500 are determined in such a way that this optical performance difference is minimized (S206, S211 (the second process)). Thereby, even when the NA of the projection optical system 200 is changed, it is possible to suppress the reduction of the optical performance of the projection optical system 200, especially the reduction of the focus performance, caused by the variation of the cooling effect (temperature adjustment effect) of the temperature adjustment unit 500.

[0097] In addition, the inventors et al. conducted in - depth research based on Figure 6 the flow of the determination method shown and obtained Figure 10 the research results shown. In Figure 10 , the vertical axis represents the evaluation criterion ΔF using Equation 3, and the horizontal axis represents the temperature adjustment conditions at the first numerical aperture NA1 and the second numerical aperture NA2 respectively. Refer to Figure 10, when changing the NA of the projection optical system 200 from the first numerical aperture NA1 to the second numerical aperture NA2 (>NA1), if the supply amount of the gas from the temperature adjustment unit 500 is increased, the evaluation criterion ΔF at the first numerical aperture NA1 and the second numerical aperture NA2 becomes smaller. This means that, among the different NAs of the projection optical system 200, the difference in the change of focusing becomes smaller. Therefore, when changing the numerical aperture of the projection optical system 200 from the first numerical aperture to the second numerical aperture larger than the first numerical aperture, it is only necessary to change (determine) the temperature adjustment conditions in the temperature adjustment unit 500 in such a way that the supply amount of the gas supplied from the temperature adjustment unit 500 to the space MSP is increased.

[0098] In Figure 6 and Figure 9 , a determination method for determining the temperature adjustment conditions in the temperature adjustment unit 500 in the control unit 300 of the exposure apparatus 1000 has been described. However, the temperature adjustment conditions in the temperature adjustment unit 500 can also be determined using a simulation mainly based on an information processing device including a computer or the like.

[0099] Figure 11 is a flowchart for explaining a determination method for determining the temperature adjustment conditions in the temperature adjustment unit 500 using an information processing device. Similarly to what has been described so far, the NA of the projection optical system 200 set by the NA diaphragm 206 is set to two NA conditions, the first numerical aperture NA1 and the second numerical aperture NA2, and the number of temperature adjustment conditions set for the temperature adjustment unit 500 is set to n types.

[0100] In S302, by irradiating the projection optical system 200 with exposure light, a heat generation condition for heating the optical members disposed inside the projection optical system 200 is set. Specifically, since a part of the exposure light is absorbed by the optical members, the calorific value is calculated. Here, the optical members refer to the meniscus lens 204 and the convex mirror 205 included in the convex mirror unit 210 of the projection optical system 200.

[0101] In S303, the temperature adjustment conditions in the temperature adjustment unit 500 in the state where the NA of the projection optical system 200 is set to the first numerical aperture NA1, that is, the temperature adjustment conditions at the first numerical aperture NA1, are set. As the temperature adjustment conditions, for example, as Figure 5 shown, it includes whether to supply gas from the supply ports 207a, 207b, and 207c respectively, and the supply amounts of the gases supplied from the supply ports 207a, 207b, and 207c respectively.

[0102] In S304, the temperature adjustment conditions set in S303 are applied to the convex mirror unit 210, and a thermal fluid simulation is performed in a state where an exposure load (thermal load) is applied to the projection optical system 200, and the temperature distribution (thermal distribution) generated in the space MSP and the optical member is calculated. Specifically, by using the software STREAM manufactured by HEXAGON, their calculations can be performed, and the temperature distributions of the space MSP and the optical member in the equilibrium state can be obtained. However, the software used for calculating the temperature distribution is not limited to STREAM. In addition, the space MSP particularly refers to the space between the meniscus lens 204 and the convex mirror 205.

[0103] In S305, the temperature distribution calculated in S304 is converted into the refractive index distribution in the space MSP and the optical member, the aberration is obtained based on the refractive index distribution, and based on the aberration, the focusing as the optical performance of the projection optical system 200 is calculated. By obtaining the aberration based on the refractive index distribution, the focusing performances such as ΔF and Shift shown in Figure 7 can be calculated. At this time, for a plurality of patterns having different lengths in the length direction, specifically, for the Figure 3A 0° mark, 45° mark, 90° mark, and 135° mark shown in are calculated for focusing respectively.

[0104] In S306, S303, S304, and S305 are respectively executed for n kinds of temperature adjustment conditions, and the focusing is calculated.

[0105] In S307, based on the focusing calculated in S306, the temperature adjustment conditions at the first numerical aperture NA1 are determined. Specifically, the temperature adjustment condition under which the focusing difference (optical performance difference) based on the 0° mark, 45° mark, 90° mark, and 135° mark is minimized is set as the temperature adjustment condition at the first numerical aperture NA1.

[0106] In S308, the temperature adjustment conditions in the temperature adjustment unit 500 in a state where the NA of the projection optical system 200 is set to the second numerical aperture NA2, that is, the temperature adjustment conditions at the second numerical aperture NA2, are set.

[0107] In S309, similarly to S304, the temperature adjustment conditions set in S308 are applied to the convex mirror unit 210, and a thermal fluid simulation is performed in a state where an exposure load is applied to the projection optical system 200, and the temperature distribution generated in the space MSP and the optical member is calculated.

[0108] In S310, similarly to S305, the temperature distribution calculated in S309 is converted into the refractive index distribution in the space MSP and the optical member, the aberration is obtained based on the refractive index distribution, and based on the aberration, the focusing as the optical performance of the projection optical system 200 is calculated.

[0109] In S311, in the same manner as in S306, S308, S309, and S310 are respectively executed for n temperature adjustment conditions to calculate the focus.

[0110] In S312, based on the focus calculated in S306 and S311, the temperature adjustment condition at the second numerical aperture NA2 is determined. Specifically, in Equation 3, the condition in which the value of the evaluation criterion ΔF(NA2 - NA1) is the smallest is the condition in which the optical performance difference (focus difference) between the first numerical aperture NA1 and the second numerical aperture NA2 is the smallest, and this temperature adjustment condition is set as the temperature adjustment condition at the second numerical aperture NA2.

[0111] In this way, for the mutually different NA1 and NA2 of the projection optical system 200, the temperature distributions generated in the space MSP and the optical member by applying a heat load to the projection optical system 200 are respectively calculated (S303, S304, S308, S309 (the first process)). Next, regarding the first numerical aperture NA1 and the second numerical aperture NA2, based on the refractive index distributions in the space MSP and the optical member obtained from the temperature distribution, the optical performance (focus) of the projection optical system 200 is respectively calculated (S305, S306, S310, S311 (the second process)). Then, based on the optical performance difference (focus difference) between the optical performances of the first numerical aperture NA1 and the second numerical aperture NA2, the temperature adjustment condition is determined (S307, S312 (the third process)).

[0112] As described above, by determining the temperature adjustment condition in the temperature adjustment unit 500 according to the NA set for the projection optical system 200, in the exposure apparatus 1000, the temperature adjustment condition in the temperature adjustment unit 500 can be changed according to the change in the NA of the projection optical system 200 by the NA diaphragm 206. Therefore, when the NA of the projection optical system 200 is changed, a decrease in the optical performance of the projection optical system 200, particularly a decrease in the focus performance, caused by a change in the cooling effect (temperature adjustment effect) of the temperature adjustment unit 500 can be suppressed. It should be noted that the control (processing) of changing the temperature adjustment condition in the temperature adjustment unit 500 according to the change in the NA of the projection optical system 200 can be implemented by the control unit 300.

[0113] The manufacturing method of the article in the embodiment of the present invention is suitable for manufacturing articles such as semiconductor elements, liquid crystal display elements, flat panel displays, and MEMS, for example. The manufacturing method includes: a step of exposing a substrate coated with a photosensitive agent using the above-described exposure apparatus 1000; and a step of developing the exposed photosensitive agent. In addition, the pattern of the developed photosensitive agent is used as a mask to perform an etching process, an ion implantation process, etc. on the substrate to form a circuit pattern on the substrate. These exposure, development, etching, etc. processes are repeated to form a circuit pattern composed of multiple layers on the substrate. In subsequent processes, the substrate on which the circuit pattern is formed is cut (processed), and chip mounting, bonding, and inspection processes are performed. In addition, the manufacturing method can include other known processes (oxidation, film formation, evaporation, doping, planarization, resist stripping, etc.). The manufacturing method of the article in the present embodiment is advantageous in at least one aspect among the performance, quality, productivity, and production cost of the article as compared with the prior art. Other embodiments

[0114] The embodiment of the present invention can also be implemented by the following method, that is, a method of providing software (program) that executes the functions of the above-described embodiment to a system or apparatus through a network or various storage media, and the computer or central processing unit (CPU) or microprocessing unit (MPU) of the system or apparatus reads and executes the program.

[0115] The invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Therefore, the claims are appended to disclose the scope of the invention.

Claims

1. An exposure device, characterized in that: The substrate is exposed via the original plate, wherein the exposure device has: A projection optical system projects the pattern of the original plate onto the substrate; NA stop, capable of changing the numerical aperture of the projection optical system; a temperature adjustment unit that adjusts the temperature of the space and the temperature of the optical components disposed inside the projection optical system by supplying and exhausting gas to the space inside the projection optical system; and The control unit changes the conditions related to the supply and exhaust of the gas by the temperature adjustment unit according to the change of the numerical aperture by the NA stop.

2. The exposure device according to claim 1, characterized in that The NA stop is arranged at the pupil position of the projection optical system. The optical component includes a reflector and a lens arranged across the NA aperture. The temperature adjustment unit supplies and discharges the gas to a space between the reflecting mirror and the lens.

3. The exposure device according to claim 1, characterized in that The temperature adjustment part includes a plurality of supply ports for supplying the gas and a plurality of exhaust ports for exhausting the gas.

4. The exposure device according to claim 3, characterized in that The conditions include whether the gas is supplied from the multiple supply ports respectively, whether the gas is discharged from the multiple exhaust ports respectively, the supply amount of the gas supplied from the multiple supply ports respectively, the exhaust amount of the gas discharged from the multiple exhaust ports respectively, the respective positions of the multiple supply ports, the respective positions of the multiple exhaust ports, the respective angles of the multiple supply ports, the respective angles of the multiple exhaust ports and at least one of the supply temperature of the gas.

5. The exposure device according to claim 1, characterized in that The control unit changes the condition based on a change in optical performance of the projection optical system caused by a change in the numerical aperture by the NA stop.

6. The exposure device according to claim 5, characterized in that The optical properties include focusing, The control unit changes the condition so that a focus difference between the focus in a balanced state before the numerical aperture is changed by the NA stop and the focus in a balanced state after the numerical aperture is changed by the NA stop is minimized.

7. The exposure device according to claim 5, characterized in that The optical properties include focusing, The control unit changes the condition so that the focus difference between the focuses of each of the plurality of patterns different in length directions is minimized in each of a balanced state before the numerical aperture is changed by the NA stop and a balanced state after the numerical aperture is changed by the NA stop.

8. The exposure device according to claim 1, characterized in that The conditions include the supply amount of the gas supplied, The control unit changes the condition so as to increase the supply amount when the numerical aperture is changed from a first numerical aperture to a second numerical aperture larger than the first numerical aperture by the NA stop.

9. A determination method, characterized in that The determination method determines conditions related to the supply and exhaust of gas in a temperature adjustment unit, wherein the temperature adjustment unit adjusts the temperature of the space and the temperature of an optical member disposed inside the space by supplying and exhausting the gas to the space inside the projection optical system that projects the pattern of the original plate onto the substrate, wherein the determination method has the following steps: A first step of measuring the optical performance of the projection optical system while changing the conditions in a state where a plurality of numerical apertures different from each other are set for the projection optical system using an NA stop capable of changing the numerical aperture of the projection optical system; and The second step is to determine the condition based on the optical performance difference between the optical performances measured in the state where the plurality of numerical apertures are set respectively.

10. The determination method according to claim 9, characterized in that: In the second step, the conditions are determined so as to minimize the optical performance difference.

11. A determination method, characterized in that The determination method determines conditions related to the supply and exhaust of gas in a temperature adjustment unit, wherein the temperature adjustment unit adjusts the temperature of the space and the temperature of an optical member disposed inside the space by supplying and exhausting the gas to the space inside the projection optical system that projects the pattern of the original plate onto the substrate, wherein the determination method has the following steps: A first step of measuring the optical performance of the projection optical system for each of a plurality of patterns having different length directions while changing the conditions, in a state where a plurality of different numerical apertures are set for the projection optical system using an NA stop capable of changing the numerical aperture of the projection optical system; and In the second step, the condition is determined based on the optical performance difference between the optical performances measured for the plurality of patterns for each of the plurality of numerical apertures.

12. The determination method according to claim 11, characterized in that: In the second step, the condition is determined for each of the plurality of numerical apertures so as to minimize the optical performance difference.

13. A determination method, characterized in that The determination method determines conditions related to the supply and exhaust of gas in a temperature adjustment unit, wherein the temperature adjustment unit adjusts the temperature of the space and the temperature of an optical member disposed inside the space by supplying and exhausting the gas to the space inside the projection optical system that projects the pattern of the original plate onto the substrate, wherein the determination method has the following steps: A first step of calculating a temperature distribution generated in the space and the optical member by applying a heat load to the projection optical system for each of a plurality of different numerical apertures set for the projection optical system; A second step of calculating, for each of the plurality of numerical apertures, optical performance of the projection optical system based on a refractive index distribution in the space and the optical member obtained from the temperature distribution calculated in the first step; and The third step is to determine the condition based on the optical performance difference between the optical performances of the plurality of numerical apertures calculated in the second step.

14. The determination method according to claim 13, characterized in that: In the third step, the conditions are determined so as to minimize the optical performance difference.

15. The determination method according to any one of claims 9, 11 and 13, characterized in that: The optical properties include focusing.

16. A method for manufacturing an article, characterized in that: The manufacturing method of the article has the following steps: A step of exposing a substrate using the exposure apparatus according to claim 1; and The exposed substrate is developed.

17. A computer-readable storage medium, characterized in that: A computer program is stored, wherein When the computer program is executed by a processor, each step of the determination method according to claim 9 is implemented.

18. A computer-readable storage medium, characterized in that: A computer program is stored, wherein When the computer program is executed by a processor, each step of the determination method according to claim 11 is implemented.

19. A computer-readable storage medium, characterized in that: A computer program is stored, wherein When the computer program is executed by a processor, each step of the determination method according to claim 13 is implemented.

20. A computer program product, characterized in that comprises a computer program, wherein When the computer program is executed by a processor, each step of the determination method according to claim 9 is implemented.

21. A computer program product, characterized in that comprises a computer program, wherein When the computer program is executed by a processor, each step of the determination method according to claim 11 is implemented.

22. A computer program product, characterized in that comprises a computer program, wherein When the computer program is executed by a processor, each step of the determination method according to claim 13 is implemented.

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