Beam leading method and device of ion implanter, ion implantation equipment and storage medium

Abstract

The invention provides a beam guiding method and device of an ion implanter, ion implantation equipment and a storage medium, and relates to the field of general control and regulation systems.The method comprises the steps that target input parameters of a newly-built beam are obtained, and the target input parameters comprise the target doping ion type, the target beam energy and the target injection flow intensity; searching historical beam information from a historical database based on the target input parameter, wherein the historical doped ion type in the historical beam information is the same as the target doped ion type; supplementing beam information of the newly-built beam based on the historical beam information and the target input parameters to obtain initial beam information of the newly-built beam; and carrying out a beam guiding process based on the initial beam information to obtain a working ion beam indicated by a newly-built beam. According to the method, the beam newly-building efficiency of the ion implantation equipment can be improved.

Description

Technical Field

[0001] The present application relates to the field of general control and regulation systems, and in particular to a beam guiding method, device, ion implantation equipment and storage medium for an ion implanter. Background Art

[0002] The rapid development of information technology has made the semiconductor industry a core field affecting national strategic security. With the continuous increase in the demand for semiconductor chips, the chip processing industry has developed rapidly, and higher requirements have been placed on the automated production capabilities of related manufacturing equipment.

[0003] As a core equipment in the production process of semiconductor devices, an ion implanter can perform ion doping on the semiconductor surface, change its carrier concentration and conduction type, and has high requirements for the level of operators. In the actual production process, the beam current adjustment process for a newly created Recipe (process recipe) often takes a lot of time for relevant professionals. Therefore, how to create a Recipe and adjust the beam current to improve the beam guiding efficiency is an urgent problem to be solved. Summary of the Invention

[0004] The present application provides a beam guiding method, device, ion implantation equipment and storage medium for an ion implanter. The technical solutions are as follows: According to one aspect of the present application, there is provided a beam guiding method for an ion implanter, the method including: Obtaining target input parameters of a newly created beam current, the target input parameters including a target doping ion type, a target beam current energy, and a target implantation current intensity; Searching for historical beam current information from a historical database based on the target input parameters, where the historical doping ion type in the historical beam current information is the same as the target doping ion type; Supplementing the beam current information of the newly created beam current based on the historical beam current information and the target input parameters to obtain initial beam current information of the newly created beam current; Performing a beam guiding process based on the initial beam current information to obtain a working ion beam indicated by the newly created beam current.

[0005] According to another aspect of the present application, there is provided a beam guiding device for an ion implanter, the device including: A first obtaining module, configured to obtain target input parameters of a newly created beam current, the target input parameters including a target doping ion type, a target beam current energy, and a target implantation current intensity; A first searching module, configured to search for historical beam current information from a historical database based on the target input parameters, where the historical doping ion type in the historical beam current information is the same as the target doping ion type; A parameter completion module for supplementing the beam information of the newly created beam based on the historical beam information and the target input parameters to obtain the initial beam information of the newly created beam; A control module for performing a beam guiding process based on the initial beam information to obtain the working ion beam indicated by the newly created beam.

[0006] According to one aspect of the present application, there is provided an ion implantation device, including: a processor and a memory storing a program, the program including instructions that, when executed by the processor, cause the processor to execute the beam guiding method of the ion implanter as described above.

[0007] According to another aspect of the present application, there is provided a non-transitory computer-readable storage medium storing computer instructions for causing a computer to execute the beam guiding method of the ion implanter as described above.

[0008] According to another aspect of the present application, there is provided a computer program product, which includes computer instructions stored in a computer-readable storage medium. The processor of the ion implantation device reads the computer instructions from the computer-readable storage medium, and the processor executes the computer instructions, so that the ion implantation device executes the beam guiding method of the ion implanter as described above.

[0009] The beneficial effects brought by the technical solution provided by the embodiments of the present application at least include: The user only needs to input three parameters: the target doping ion type, the target ion energy, and the target implantation current intensity. The ion implantation device can automatically complete and generate all the initial beam information of the newly created beam according to the target input parameters and the historical database, and perform a beam guiding process based on the initial beam information to obtain the required working ion beam. The purpose of automatic beam information completion is realized, the number of process parameters input manually is reduced, and it is not necessary for professionals to be proficient in understanding all the beam information, thereby reducing the operation difficulty of the ion implantation device and improving the efficiency of creating a new beam of the ion implantation device. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] In the following description of exemplary embodiments with reference to the accompanying drawings, more details, features, and advantages of the present application are disclosed. In the drawings: Figure 1 A flowchart showing a beam guiding method of an ion implanter according to an exemplary embodiment of the present application; Figure 2 A flowchart showing another beam guiding method of an ion implanter according to an exemplary embodiment of the present application; Figure 3 It is a flowchart for completing the parameters of the newly created beam provided by an exemplary embodiment of the present application; Figure 4 The flowchart of another beam guiding method of an ion implanter according to an exemplary embodiment of the present application is shown; Figure 5 It is the flowchart of automatic beam current regulation provided by an exemplary embodiment of the present application; Figure 6 It is the schematic structural diagram of a beam guiding device of an ion implanter provided by an embodiment of the present application; Figure 7 The structural block diagram of an exemplary ion implantation device that can be used to implement the embodiments of the present application is shown. Detailed implementation manners

[0011] Embodiments of the present application will be described in more detail below with reference to the accompanying drawings. Although some embodiments of the present application are shown in the drawings, it should be understood that the present application can be implemented in various forms and should not be construed as limited to the embodiments set forth herein. On the contrary, these embodiments are provided to more thoroughly and completely understand the present application. It should be understood that the drawings and embodiments of the present application are only for exemplary purposes and are not used to limit the protection scope of the present application.

[0012] It should be understood that the steps recited in the method embodiments of the present application can be executed in different orders and / or in parallel. In addition, the method embodiments may include additional steps and / or omit the steps shown. The scope of the present application is not limited in this regard.

[0013] As used herein, the term "including" and its variants are open-ended, that is, "including but not limited to". The term "based on" is "at least partially based on". The term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one additional embodiment"; the term "some embodiments" means "at least some embodiments". The relevant definitions of other terms will be given in the following description. It should be noted that the concepts such as "first" and "second" mentioned in the present application are only used to distinguish different devices, modules or units, and are not used to limit the order of functions performed by these devices, modules or units or their interdependent relationships. It should be noted that the modifiers "one" and "multiple" mentioned in the present application are illustrative rather than restrictive, and those skilled in the art should understand that unless otherwise clearly stated in the context, it should be understood as "one or more". The names of the messages or information exchanged between multiple devices in the embodiments of the present application are only for illustrative purposes and are not used to limit the scope of these messages or information.

[0014] The solution of the present invention is described below with reference to the accompanying drawings, and the technical solutions provided by the embodiments of the present invention are described in detail through specific embodiments and their application scenarios.

[0015] In the actual production and manufacturing process, there are many process parameters corresponding to the newly built beam current. It often takes a large amount of manual debugging and input time of professional personnel. Subsequently, various process parameters need to be manually debugged, resulting in low automation of the beam injection process. Moreover, it requires professional personnel to proficiently apply various process parameters, which also greatly increases the operation difficulty of the ion implantation equipment.

[0016] In view of the problem of low automation of the beam injection process in the related art, the embodiment of the present application provides a new beam injection method for an ion implanter. Only a very small number of process parameters need to be input by the user, and the remaining required beam current information can be automatically generated and completed. While improving the automation of the beam injection process, it can also effectively reduce the operation difficulty of the ion implantation equipment. Figure 1 The flowchart of a beam injection method for an ion implanter according to an exemplary embodiment of the present application is shown. This method is described by taking its application to an ion implantation equipment as an example. As Figure 1 shown, this method includes: Step 101, obtain the target input parameters of the newly built beam current. The target input parameters include the target doping ion type, the target beam current energy, and the target injection current intensity.

[0017] Different from the related art where the user needs to input all the beam current information when creating a new beam current, in the embodiment of the present application, only the user needs to input the three most critical parameters, namely the doping ion type, the beam current energy, and the injection current intensity. The remaining beam current information (or process parameters) required for creating a new beam current can be automatically generated and completed by the ion implantation equipment based on the three input parameters. In a possible implementation manner, after the user creates a new beam current in the UI interface of the ion implantation equipment and inputs the target doping ion type, the target beam current intensity, and the target injection current intensity, the ion implantation equipment can obtain the target input parameters of the newly built beam current. The target input parameters include the target doping ion type, the target beam current energy, and the target injection current intensity; and then execute the subsequent process based on the existing target input parameters to generate and complete the parameters required for other newly built beam currents.

[0018] Step 102, search for historical beam current information in the historical database based on the target input parameters. The historical doping ion type in the historical beam current information is the same as the target doping ion type.

[0019] Among them, a historical database is pre-set in the ion implantation equipment. The historical database stores the historical beam current information of several different types of ion beams; the historical database can be configured for it before the ion implantation equipment leaves the factory; or, the historical database can also be imported from other ion implantation equipment of the same type; or, the historical database can also store the historical beam current information during the use of this ion implantation equipment.

[0020] If there is historical beam information in the historical database that matches the target input parameters, and the historical ion beam corresponding to the historical beam information is closer to the ion beam corresponding to the newly created beam, then the beam information of the newly created beam can be generated and supplemented using the historical beam information. In a possible implementation, the historical beam information that matches the target input parameters can be searched for in the historical database based on the target input parameters, so as to use the historical beam information to supplement the beam information required for the newly created beam.

[0021] Considering that there may be no historical beam information in the historical database that exactly matches the target input parameters, to ensure the smooth progress of the subsequent process, at least it is necessary to ensure that the type of historical doped ions in the historical beam information is the same as the target doped ion type of the newly created beam.

[0022] Step 103: Supplement the beam information of the newly created beam based on the historical beam information and the target input parameters to obtain the initial beam information of the newly created beam.

[0023] After the historical beam information is found, the beam information of the newly created beam can be supplemented according to the historical beam information and the target input parameters, so as to obtain all the initial beam information of the newly created beam.

[0024] Exemplarily, the initial beam information may include the type of doped ions, the target ion energy, the target injection current intensity, the initial doped gas flow rate, the extraction voltage, the extraction suppression voltage, the bias current value, the arc voltage value, the source magnetic field current value, the Q1 current value, the Q2 current value, the Q3 current value, the X-axis position of the three-electrode, the Y-axis position of the three-electrode, the Z-axis position of the three-electrode, the filament current value, the current value of the mass analyzer, the current value of the parallel lens, the default value of the analysis slit, the default current value of the multi-coil array, the default position of the multi-pole array magnetic poles, etc.

[0025] Step 104: Perform a beam extraction process based on the initial beam information to obtain the working ion beam indicated by the newly created beam.

[0026] After the initial beam information of the newly created beam is obtained, the ion implantation equipment can be set according to the initial beam information, and the beam extraction process can be executed to obtain the working ion beam indicated by the newly created beam.

[0027] In summary, the embodiment of the present application provides a beam guiding method for an ion implanter: the user only needs to input three parameters, namely the target doping ion type, the target ion energy, and the target implantation current intensity. The ion implantation device can automatically complete and generate all the initial beam information of the newly created beam based on the target input parameters and the historical database, and perform the beam guiding process based on the initial beam information to obtain the required working ion beam. The purpose of automatic beam information completion is achieved, the number of process parameters input manually is reduced, and it is not necessary for professionals to be proficient in all the beam information, thereby reducing the operation difficulty of the ion implantation device and improving the efficiency of creating a new beam of the ion implantation device.

[0028] Considering that it may not be possible to find historical beam information that is exactly the same as the target input parameters, in order to ensure the sequential progress of subsequent processes, specific query rules are followed when searching in the historical database based on the target input parameters.

[0029] Please refer to Figure 2 , Figure 2 which shows a flowchart of another beam guiding method for an ion implanter according to an exemplary embodiment of the present application. This method is described by taking its application to an ion implantation device as an example. As Figure 2 shown, the method includes: Step 201, obtain the target input parameters of the newly created beam, where the target input parameters include the target doping ion type, the target beam energy, and the target implantation current intensity.

[0030] The implementation manner of step 201 can refer to step 101, and will not be elaborated herein in this embodiment.

[0031] Step 202, based on the target doping ion type in the target input parameters, search for the first candidate beam information in the historical database, where the historical doping ion type in the first candidate beam information is the same as the target doping ion type.

[0032] Considering that there is a certain correlation only between beam information of the same doping ion type, in order to reduce the workload of subsequent parameter adjustment, when searching and matching in the historical database based on the target input parameters, first, based on the target doping ion type in the target input parameters, search for the first candidate beam information in the historical database whose historical doping ion type is the same as the target doping ion type.

[0033] Step 203, determine the historical beam information based on the first candidate beam information.

[0034] Furthermore, determine the finally matched historical beam information from the found first candidate beam information.

[0035] The number of the first candidate beam current information found is different, and the subsequent steps also vary. Corresponding to an exemplary example, step 203 may further include steps 203A and 203B.

[0036] Step 203A, if there are multiple pieces of the first candidate beam current information, based on the target beam current energy in the target input parameter, screen out the second candidate beam current information from the first candidate beam current information, where the energy difference between the historical beam current energy of the second candidate beam current information and the target beam current energy is the smallest; determine the historical beam current information based on the second candidate beam current information.

[0037] If multiple pieces of the first candidate beam current information are found, that is, there are multiple beam current information in the historical database with the same target doping ion type, and finally only a single piece of beam current information is needed for beam current information completion, it is necessary to screen the multiple pieces of the first candidate beam current information again to screen out an example beam current that is more similar to the newly created beam. Corresponding to a possible implementation manner, if there are multiple pieces of the first candidate beam current information, the second candidate beam current information with the historical beam current energy closest to the target beam current energy can continue to be screened out from the first candidate beam current information based on the target beam current energy in the target input parameter; that is, the energy difference between the historical beam current energy of the second candidate beam current information and the target beam current energy is the smallest. Then, the finally matched historical beam current information is determined from the screened second candidate beam current information.

[0038] If multiple pieces of the second candidate beam current information can still be found, and considering that the device state of the ion implantation device may change over time, in order to reduce the workload of subsequent parameter adjustment and make the completed beam current information more in line with the current device state of the ion implantation device, the historical beam current information will also be screened out from the second candidate beam current information based on the target new creation date of the newly created beam. Corresponding to determining the historical beam current information based on the second candidate beam current information may further include steps 203A1 and 203A2.

[0039] Step 203A1, if there are multiple pieces of the second candidate beam current information, based on the target new creation date corresponding to the newly created beam, screen out the historical beam current information from the second candidate beam current information, where the time difference between the historical creation date of the historical beam current information and the target new creation date is the smallest.

[0040] If there are multiple pieces of the second candidate beam current information, the target new creation date corresponding to the newly created beam can be obtained, and then the historical beam current information is screened out from the multiple pieces of the second candidate beam current information according to the target new creation date, where the time difference between the historical creation date of the historical beam current information and the target new creation date is the smallest. Then, the finally obtained historical beam current information after three-step screening is the beam current information with the same doping ion type, the closest ion energy, and the closest distance to the target new creation date.

[0041] Step 203A2, if there is a single piece of second candidate beam current information, determine the second candidate beam current information as the historical beam current information.

[0042] Optionally, if only a single piece of second candidate beam current information is obtained, the second candidate beam current information can be directly determined as the final historical beam current information.

[0043] Step 203B, if there is a single piece of first candidate beam current information, determine the first candidate beam current information as the historical beam current information.

[0044] Optionally, if only a single piece of first candidate beam current information is obtained, the first candidate beam current information can be directly determined as the final historical beam current information.

[0045] Step 204, supplement the beam current information of the newly created beam based on the historical beam current information and the target input parameters to obtain the initial beam current information of the newly created beam.

[0046] When supplementing the beam current information of the newly created beam based on the historical beam current information and the target input parameters, the specific supplementation process may include the following steps, that is, Step 204 may include Steps 204A to 204E.

[0047] Step 204A, based on the target doping ion type in the target input parameters, determine the target doping gas type corresponding to the newly created beam.

[0048] Among them, the same doping gas type may correspond to multiple doping ion types. Therefore, first, based on the target doping ion type in the target input parameters, combined with the pre-stored correspondence between the doping ion type and the doping gas type, determine the target doping gas type required for the newly created beam.

[0049] Step 204B, based on the historical injection beam current, historical beam transmission efficiency, and historical doping gas flow rate in the historical beam current information, determine the initial doping gas flow rate required for the newly created beam.

[0050] In a possible implementation manner, it is also necessary to obtain the historical injection beam current, historical beam transmission efficiency, and historical doping gas flow rate from the historical beam current information, and calculate the initial doping gas flow rate required for the newly created beam.

[0051] Step 204C, based on the historical beam current information, determine the initial adjustment parameters of the ion implanter.

[0052] Secondly, it is necessary to obtain historical adjustment parameters from historical beam information and determine the historical adjustment parameters as the initial adjustment parameters of the ion implanter. The historical adjustment parameters include: bias current value, arc voltage value, source magnetic field current value, Q1 current value, Q2 current value, Q3 current value, three-electrode X-axis position, three-electrode Y-axis position, and three-electrode Z-axis position.

[0053] Step 204D: Based on the target input parameters, determine the first initial current value of the mass analyzer and the second initial current value of the parallel lens in the ion implanter.

[0054] After that, it is also necessary to determine the first initial current value of the mass analyzer and the second initial current value of the parallel lens in the ion implanter according to the target input parameters.

[0055] Exemplarily, the calculation formulas for the first initial current value and the second initial current value can be as shown in formula (1): (1) where E represents the target ion energy, e is the ion valence of the target ion, m is the relative molecular mass of the target ion, N is the number of turns of the coil, and is the vacuum permeability. When calculating the first initial current value of the mass analyzer and the second initial current value of the parallel lens, the number of turns of the coils of the two devices may be inconsistent.

[0056] Step 204E: Based on the target doping gas type, target ion energy, target injection current intensity, initial doping gas flow rate, initial adjustment parameters, first initial current value, and second initial current value, determine the initial beam information of the newly created beam.

[0057] Furthermore, write the target doping gas type, target ion energy, target injection current intensity, initial doping gas flow rate, initial adjustment parameters, first initial current value, and second initial current value into the initial beam information of the newly created beam.

[0058] Optionally, in addition to the initial beam information supplemented based on the target input parameters and historical beam information, the initial beam information further includes information such as the filament current value, the default value of the analysis slit, the default value of the multi-coil array current, and the default position of the multi-pole array magnetic poles. Among them, the default value of the analysis slit, the default value of the multi-coil array current, the default position of the multi-pole array magnetic poles, etc. are all pre-stored in the ion implantation device. After receiving the target input parameters, the ion implantation device can directly obtain the default value of the analysis slit, the default value of the multi-coil array current, and the default position of the multi-pole array magnetic poles, and write them into the initial beam information of the newly created input.

[0059] The filament current value corresponding to the newly created beam current is also related to the device state of the ion implantation equipment. Therefore, obtain the target new creation date corresponding to the newly created beam current, and search for the historical filament current value from the historical database based on the target new creation date. The time difference between the historical creation date corresponding to the historical filament current value and the target new creation date is the smallest. That is, retrieve the latest historical filament current value from the historical database as the filament current value of the newly created beam current.

[0060] Correspondingly, based on the target doping gas type, target ion energy, target implantation current intensity, initial doping gas flow rate, initial adjustment parameters, first initial current value, second initial current value, historical filament current value, default value of the analysis slit, default value of the multi-coil array current, and default position of the multi-pole array magnetic poles, determine the initial beam current information of the newly created beam current.

[0061] Please refer to Figure 3 , which is a flowchart for completing the parameters of the newly created beam current provided by an exemplary embodiment of the present application. This process includes: writing the doping ion type, ion energy, and implantation current intensity input by the user into the newly created Recipe (process parameters); writing the doping gas type corresponding to the ion into the newly created Recipe according to the user input. According to the user input, retrieve the beam current information with the closest date to the same type of ion with the closest ion energy to the present ion in the historical database; calculate the doping gas flow rate required for the newly created Recipe according to the implantation current intensity, doping gas flow rate, and beam current transmission efficiency in the retrieval result, and write the calculation result into the Recipe. Write the required extraction voltage and extraction suppression voltage into the newly created Recipe according to the user input. According to the user input, obtain the beam current historical adjustment information, and write its bias current value, arc voltage value, source magnetic field current value, Q1 current value, Q2 current value, Q3 current value, three-electrode X-axis position, three-electrode Y-axis position, and three-electrode Z-axis position into the newly created Recipe. Calculate the current values required for the mass analyzer and parallel lens according to the user input, and write the calculation result into the Recipe. Retrieve the latest filament current value from the historical database and write it into the newly created Recipe. Write the default value of the analysis slit, the default value of the multi-coil array current, and the default positions of the magnetic poles on both sides of the parallel lens of the multi-pole array into the newly created Recipe.

[0062] Step 205, perform a beam extraction process based on the initial beam current information to obtain the working ion beam indicated by the newly created beam current.

[0063] The ion beam generated based on the initial beam current information may still be different from the final working ion beam. In order to meet the requirements of the working ion beam, it is also necessary to automatically adjust the initial beam current information to obtain the final target beam current information, and then generate the working ion beam based on the target beam current information.

[0064] The process of specifically adjusting the initial beam current information can be referred to the following embodiments, and will not be elaborated here.

[0065] Optionally, after obtaining the adjusted target beam current information, the target beam current information can be stored in the historical database to update the historical database, so that the historical beam current information in the historical database is more in line with the device state of the ion implantation equipment, which is more conducive to the accuracy of subsequent newly established beam currents. In this embodiment, multiple ways of complementing beam current information are provided, so as to realize the automatic generation of the beam current information corresponding to the newly established beam current when the user inputs fewer parameters. In addition, when screening historical beam current information from the historical database, the historical beam current information is the beam current information with the same doping ion type, the closest ion energy, and the closest date, and the beam current information that meets the requirements of the newly established beam current can be selected as much as possible, reducing the workload of subsequent parameter adjustment.

[0066] The above embodiments mainly describe the process of complementing the initial beam current information, and this embodiment mainly describes the adjustment process of the initial beam current information.

[0067] Please refer to Figure 4 , Figure 4 shows a flowchart of another beam guiding method of an ion implanter according to an exemplary embodiment of the present application. This method is described by taking it applied to an ion implantation device as an example. As Figure 4 shown, the method includes: Step 401, obtain the target input parameters of the newly established beam current, where the target input parameters include the target doping ion type, the target beam current energy, and the target implantation current intensity.

[0068] Step 402, search for historical beam current information from the historical database based on the target input parameters, and the historical doping ion type in the historical beam current information is the same as the target doping ion type.

[0069] Step 403, supplement the beam current information of the newly established beam current based on the historical beam current information and the target input parameters to obtain the initial beam current information of the newly established beam current.

[0070] The implementation manners of steps 401 to 403 can be referred to the above embodiments, and will not be elaborated here.

[0071] Step 404, set the ion implanter based on the initial beam current information so that the ion implanter generates an initial ion beam.

[0072] First, set the ion implanter based on each parameter in the initial beam current information and introduce the required gas so that the ion implanter can generate an initial ion beam. Subsequently, the SetUp current of the initial ion beam is measured to adjust the initial beam current information.

[0073] Step 405: Adjust the initial beam current information based on the measured values of the initial ion beam to obtain the target beam current information.

[0074] Among them, the measured values mainly include SetUp current, beam horizontal angle, beam injection intensity, beam uniformity, etc. Correspondingly, by automatically measuring the above-mentioned measured values of the initial ion beam, each initial beam current information is adjusted until each measured value meets the requirements to obtain the target beam current information.

[0075] Figure 5 is the flow chart of automatic beam current adjustment provided by an exemplary embodiment of the present application. As Figure 5 shown, this process includes: setting values for the power supply (ion implanter) according to the information (initial beam current information) in the newly created Recipe, and introducing the required gas.

[0076] Adjust the mass analyzer current, the X-axis position of the three-electrode, the Y-axis position of the three-electrode, the Z-axis position of the three-electrode, the Q1 current, and the Q2 current in sequence to make the SetUp current of the ion beam reach the maximum.

[0077] Adjust the bias current, arc voltage, and source magnetic field current in sequence to make the SetUp current reach the maximum.

[0078] Adjust the mass analyzer current, the X-axis position of the three-electrode, the Y-axis position of the three-electrode, the Z-axis position of the three-electrode, the Q1 current, and the Q2 current in sequence to make the SetUp current reach the maximum.

[0079] Calculate the upper and lower limits of the SetUp current according to the injection intensity and beam transmission efficiency.

[0080] Judge whether the SetUp current is within the limited range (this limited range refers to the upper and lower limits of the SetUp current).

[0081] If not, loop to adjust the doping gas flow rate, source magnetic field current, mass analyzer current, the X-axis position of the three-electrode, the Y-axis position of the three-electrode, the Z-axis position of the three-electrode, the Q1 current, and the Q2 current in sequence until the SetUp current meets its upper and lower limit requirements.

[0082] If so, that is, after the SetUp current meets the requirements, release the beam to the backend, and use a moving Faraday to detect the beam horizontal angle. When the horizontal angle does not meet the requirements, adjust the parallel lens current to make the beam horizontal angle meet the requirements.

[0083] Use a moving Faraday to detect the injection intensity. When the injection intensity does not meet the requirements (not meeting the requirements indicates that the measured injection intensity is less than the target injection intensity), adjust the doping gas flow rate to make the injection intensity meet the requirements.

[0084] Adjust the beam uniformity through a multi-coil array and a multi-magnet pole array until it meets the requirements.

[0085] Among them, when calculating the upper and lower limits of the SetUp current according to the injection beam intensity and the beam transmission efficiency, the upper limit of the SetUp current is calculated according to the injection beam intensity and the maximum beam transmission efficiency, and the lower limit of the SetUp current is calculated based on the injection beam intensity and the minimum beam transmission efficiency. Moreover, the injection beam intensity is the injection beam intensity in the target input parameters.

[0086] Moreover, in this embodiment, the beam information adjustment link is divided into two parts: SetUp current adjustment and end current adjustment. In the adjustment process, some power supplies are repeatedly adjusted, effectively avoiding problems such as too high arc current or too high extraction suppression current that may be caused by unreasonable Recipe parameters, and having a certain protective effect on the devices in the equipment.

[0087] Step 406, set the ion implanter based on the target beam information so that the ion implanter generates a working ion beam.

[0088] After obtaining the adjusted target beam information, the ion implanter can be set based on the target beam information, and the required gas can be introduced to generate a working ion beam.

[0089] In this embodiment, the initial beam information is automatically adjusted through a preset adjustment process, so that the beam information corresponding to the newly created beam is divided into two parts: the complemented beam information and the adjusted beam information, thereby achieving the purpose of obtaining the required working ion beam with fewer input parameters and improving the automation process of the newly created beam.

[0090] Please refer to Figure 6 , which is a schematic structural diagram of a beam guiding device of an ion implanter provided by an embodiment of the present application. The device includes: The first acquisition module 601 is used to acquire the target input parameters of the newly created beam, and the target input parameters include the target doping ion type, the target beam energy, and the target injection beam intensity; The first search module 602 is used to search for historical beam information from the historical database based on the target input parameters, and the historical doping ion type in the historical beam information is the same as the target doping ion type; The parameter complementing module 603 is used to supplement the beam information of the newly created beam based on the historical beam information and the target input parameters to obtain the initial beam information of the newly created beam; The control module 604 is used to perform a beam guiding process based on the initial beam information to obtain the working ion beam indicated by the newly created beam.

[0091] Optionally, the first search module 602 is further used for: Based on the target doping ion type in the target input parameters, look up the first candidate beam current information in the historical database, where the historical doping ion type in the first candidate beam current information is the same as the target doping ion type; Determine the historical beam current information based on the first candidate beam current information.

[0092] Optionally, the first lookup module 602 is further configured to: If there are multiple pieces of first candidate beam current information, based on the target beam current energy in the target input parameters, screen out the second candidate beam current information from the first candidate beam current information, where the energy difference between the historical beam current energy of the second candidate beam current information and the target beam current energy is the smallest; determine the historical beam current information based on the second candidate beam current information; If there is a single piece of the first candidate beam current information, determine the first candidate beam current information as the historical beam current information.

[0093] Optionally, the first lookup module 602 is further configured to: If there are multiple pieces of the second candidate beam current information, based on the target new build date corresponding to the new beam current, screen out the historical beam current information from the second candidate beam current information, where the time difference between the historical creation date of the historical beam current information and the target new build date is the smallest; If there is a single piece of the second candidate beam current information, determine the second candidate beam current information as the historical beam current information.

[0094] Optionally, the parameter completion module 603 is further configured to: Based on the target doping ion type in the target input parameters, determine the target doping gas type corresponding to the new beam current; Based on the historical injection current intensity, historical beam current transmission efficiency, and historical doping gas flow rate in the historical beam current information, determine the initial doping gas flow rate required for the new beam current; Based on the historical beam current information, determine the initial adjustment parameters of the ion implanter; Based on the target input parameters, determine the first initial current value of the mass analyzer and the second initial current value of the parallel lens in the ion implanter; Based on the target doping gas type, the target ion energy, the target injection current intensity, the initial doping gas flow rate, the initial adjustment parameters, the first initial current value, and the second initial current value, determine the initial beam current information of the new beam current.

[0095] Optionally, the device further includes: A second acquisition module, configured to acquire the target new build date corresponding to the new beam current; A second search module, configured to search for a historical filament current value from the historical database based on the target new creation date, where the time difference between the historical creation date corresponding to the historical filament current value and the target new creation date is the smallest; The parameter completion module 603 is further configured to: Determine the initial beam information of the new beam based on the target doping gas type, the target ion energy, the target injection current intensity, the initial doping gas flow rate, the initial adjustment parameter, the first initial current value, the second initial current value, and the historical filament current value.

[0096] Optionally, the control module 604 is further configured to: Set the ion implanter based on the initial beam information, so that the ion implanter generates an initial ion beam; Adjust the initial beam information based on the measured value of the initial ion beam to obtain target beam information; Set the ion implanter based on the target beam information, so that the ion implanter generates the working ion beam.

[0097] An exemplary embodiment of the present application further provides an ion implantation device, including: at least one processor; and a memory communicatively connected to the at least one processor. The memory stores a computer program that can be executed by the at least one processor, and when the computer program is executed by the at least one processor, it is used to cause the ion implantation device to execute the beam guiding method of the ion implanter according to the embodiment of the present application.

[0098] An exemplary embodiment of the present application further provides a non-transitory computer-readable storage medium storing a computer program, where the computer program is used to cause a computer to execute the beam guiding method of the ion implanter according to the embodiment of the present application when executed by a processor of the computer.

[0099] An exemplary embodiment of the present application further provides a computer program product, including a computer program, where the computer program is used to cause a computer to execute the beam guiding method of the ion implanter according to the embodiment of the present application when executed by a processor of the computer.

[0100] Reference Figure 7, the structural block diagram of the ion implantation device 700 that can be used as the server or client of the present application will now be described. It is an example of a hardware device that can be applied to various aspects of the present application. The ion implantation device is intended to represent various forms of digital electronic computer devices, such as laptop computers, desktop computers, workstations, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. The ion implantation device can also represent various forms of mobile devices, such as personal digital processors, cellular phones, smart phones, wearable devices, and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely examples and are not intended to limit the implementation of the present application described and / or claimed herein.

[0101] As Figure 7 shown, the ion implantation device 700 includes a computing unit 701, which can perform various appropriate actions and processes according to the computer program stored in the ROM 702 or the computer program loaded from the storage unit 708 into the RAM 703. In the RAM 703, various programs and data required for the operation of the device 700 can also be stored. The computing unit 701, the ROM 702, and the RAM 703 are connected to each other through a bus 704. The I / O interface 705 is also connected to the bus 704.

[0102] Multiple components in the ion implantation device 700 are connected to the I / O interface 705, including: an input unit 706, an output unit 707, a storage unit 708, and a communication unit 709. The input unit 706 can be any type of device that can input information into the ion implantation device 700. The input unit 706 can receive input digital or character information, and generate key signal inputs related to the user settings and / or function controls of the beam ion implantation device. The output unit 707 can be any type of device that can present information, and can include but is not limited to a display, a speaker, a video / audio output terminal, a vibrator, and / or a printer. The storage unit 708 can include but is not limited to magnetic disks and optical discs. The communication unit 709 allows the ion implantation device 700 to exchange information / data with other devices through a computer network such as the Internet and / or various telecommunication networks, and can include but is not limited to a modem, a network card, an infrared communication device, a wireless communication transceiver, and / or a chipset, such as a Bluetooth device, a WiFi device, a WiMax device, a cellular communication device, and / or the like.

[0103] The computing unit 701 can be various general and / or special processing components with processing and computing capabilities. Some examples of the computing unit 701 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various dedicated artificial intelligence (AI) computing chips, various computing units running machine learning model algorithms, a digital signal processor (DSP), and any suitable processor, controller, microcontroller, etc. The computing unit 701 executes the various methods and processes described above. For example, in some embodiments, Figure 3 , Figure 4 , Figure 5 The methods shown can be implemented as a computer software program tangibly embodied in a machine-readable medium, such as the storage unit 708. In some embodiments, part or all of the computer program can be loaded and / or installed onto the ion implantation device 700 via the ROM 702 and / or the communication unit 709. In some embodiments, the computing unit 701 can be configured to execute Figure 3 , Figure 4 , Figure 5 The methods shown by any other suitable means (e.g., by means of firmware).

[0104] The program code for implementing the methods of the present application can be written in any combination of one or more programming languages. These program codes can be provided to a processor or controller of a general-purpose computer, a special-purpose computer, or other programmable data processing device, such that when the program codes are executed by the processor or controller, the functions / operations specified in the flowchart and / or block diagram are implemented. The program codes can be executed entirely on the machine, partially on the machine, as an independent software package partially on the machine and partially on a remote machine, or entirely on a remote machine or server.

[0105] In the context of the present application, a machine-readable medium can be a tangible medium that can contain or store a program for use by or in connection with an instruction execution system, apparatus, or device. A machine-readable medium can be a machine-readable signal medium or a machine-readable storage medium. A machine-readable medium can include, but is not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any suitable combination of the foregoing. More specific examples of a machine-readable storage medium would include an electrical connection based on one or more wires, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.

[0106] As used in this application, the terms "machine-readable medium" and "computer-readable medium" refer to any computer program product, apparatus, and / or device (e.g., a magnetic disk, an optical disk, a memory, a programmable logic device (PLD)) that provides machine instructions and / or data to a programmable processor, including a machine-readable medium that receives machine instructions as a machine-readable signal. The term "machine-readable signal" refers to any signal that provides machine instructions and / or data to a programmable processor.

[0107] For purposes of providing an interaction with a user, the systems and techniques described herein can be implemented on a computer having: a display device (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor) for displaying information to the user; and a keyboard and a pointing device (e.g., a mouse or a trackball) by which the user can provide input to the computer. Other kinds of devices can also be used to provide for interaction with the user; for example, feedback provided to the user can be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user can be received in any form (including acoustic, speech, or tactile input).

[0108] The systems and techniques described herein can be implemented in a computing system that includes a back-end component (e.g., as a data server), or a computing system that includes a middleware component (e.g., an application server), or a computing system that includes a front-end component (e.g., a user computer having a graphical user interface or a web browser through which the user can interact with an implementation of the systems and techniques described herein), or a computing system that includes any combination of such back-end, middleware, or front-end components. The components of the system can be interconnected by any form or medium of digital data communication (e.g., a communication network). Examples of communication networks include: a local area network (LAN), a wide area network (WAN), and the Internet.

[0109] A computer system can include a client and a server. The client and server are generally remote from each other and typically interact over a communication network. The relationship of client and server arises by virtue of computer programs running on the respective computers and having a client-server relationship to each other.

Claims

1. A beam guiding method for an ion implanter, characterized in that: The method comprises: Obtaining target input parameters of the newly created beam, wherein the target input parameters include target doping ion type, target beam energy, and target injection current intensity; Searching historical beam current information from a historical database based on the target input parameter, wherein the historical doping ion type in the historical beam current information is the same as the target doping ion type; Supplementing the beam information of the newly created beam based on the historical beam information and the target input parameter to obtain initial beam information of the newly created beam; A beam guiding process is performed based on the initial beam current information to obtain a working ion beam indicated by the newly created beam current.

2. The method according to claim 1, characterized in that The searching historical beam information from a historical database based on the target input parameter includes: Based on the target doping ion type in the target input parameter, searching first candidate beam information from the historical database, wherein the historical doping ion type in the first candidate beam information is the same as the target doping ion type; The historical beam current information is determined based on the first candidate beam current information.

3. The method according to claim 2, characterized in that The determining the historical beam information based on the first candidate beam information includes: If there are multiple first candidate beam information, based on the target beam energy in the target input parameter, second candidate beam information is screened out from the first candidate beam information, and the energy difference between the historical beam energy of the second candidate beam information and the target beam energy is the smallest; and the historical beam information is determined based on the second candidate beam information; If there is only one first candidate beam information, the first candidate beam information is determined as the historical beam information.

4. The method according to claim 3, characterized in that The determining the historical beam information based on the second candidate beam information includes: If there are multiple second candidate beam information, based on the target creation date corresponding to the newly created beam, filter out the historical beam information from the second candidate beam information, and the time difference between the historical creation date of the historical beam information and the target creation date is the smallest; If there is only one second candidate beam information, the second candidate beam information is determined as the historical beam information.

5. The method according to any one of claims 1 to 4, characterized in that: The supplementing the beam information of the newly created beam based on the historical beam information and the target input parameter to obtain the initial beam information of the newly created beam includes: Determining a target doping gas type corresponding to the newly created beam based on the target doping ion type in the target input parameter; Determining an initial doping gas flow rate required for the newly created beam based on a historical injection current intensity, a historical beam transmission efficiency, and a historical doping gas flow rate in the historical beam information; Based on the historical beam information, determining initial adjustment parameters of the ion implanter; Based on the target input parameters, determining a first initial current value of a mass analyzer and a second initial current value of a parallel lens in the ion implanter; The initial beam information of the newly created beam is determined based on the target doping gas type, the target ion energy, the target injection flux, the initial doping gas flow, the initial adjustment parameters, the first initial current value, and the second initial current value.

6. The method according to claim 5, characterized in that The method further comprises: Obtain a target new creation date corresponding to the new beam flow; Searching for historical filament current values ​​from the historical database based on the target creation date, wherein the time difference between the historical creation date corresponding to the historical filament current value and the target creation date is the smallest; The determining the initial beam information of the newly created beam based on the target doping gas type, the target ion energy, the target injection current intensity, the initial doping gas flow rate, the initial adjustment parameter, the first initial current value, and the second initial current value includes: The initial beam information of the newly created beam is determined based on the target doping gas type, the target ion energy, the target injection flux, the initial doping gas flow, the initial adjustment parameters, the first initial current value, the second initial current value and the historical filament current value.

7. The method according to any one of claims 1 to 4, characterized in that: The beam guiding process is performed based on the initial beam current information to obtain the working ion beam indicated by the newly created beam current, including: Setting an ion implanter based on the initial beam information so that the ion implanter generates an initial ion beam; adjusting the initial beam current information based on the measured value of the initial ion beam to obtain target beam current information; The ion implanter is configured based on the target beam information so that the ion implanter generates the working ion beam.

8. A beam guiding device for an ion implanter, characterized in that: The device comprises: A first acquisition module is used to acquire target input parameters of the newly created beam, wherein the target input parameters include target doping ion type, target beam energy and target injection current intensity; A first search module is used to search for historical beam information from a historical database based on the target input parameter, wherein the historical doping ion type in the historical beam information is the same as the target doping ion type; A parameter completion module, used for supplementing the beam information of the newly created beam based on the historical beam information and the target input parameter to obtain the initial beam information of the newly created beam; The control module is used to perform a beam guiding process based on the initial beam current information to obtain a working ion beam indicated by the newly created beam current.

9. An ion implantation device comprising: A processor and a memory for storing programs; The program includes instructions, which, when executed by the processor, cause the processor to perform the method according to any one of claims 1 to 7.

10. A non-transitory computer-readable storage medium storing computer instructions, wherein: The computer instructions are used to cause the computer to execute the method according to any one of claims 1-7.

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