Power module

Abstract

The present invention relates to a power module comprising first and second substrates spaced apart from each other, at least one semiconductor chip and at least one third substrate wherein the at least one third substrate comprises at least one conductive pattern, the at least one conductive pattern includes one end portion electrically connected to any one of the semiconductor chips and the other end portion extending outwardly from the first and second substrates.

Description

Technical Field

[0001] The present invention relates to a power module, which includes an internal structure improved to enhance electrical performance and cooling performance. Background Art

[0002] Recently, with the increasing concern for the environment, the number of environment-friendly vehicles using an electric motor as a power source has increased. Environment-friendly vehicles are referred to as motor vehicles. Representative examples of environment-friendly vehicles include electric vehicles (EVs) and hybrid electric vehicles (HEVs).

[0003] A motor vehicle is provided with an inverter configured to convert direct current into alternating current when the motor operates. The inverter generally includes one or more power modules having semiconductor chips configured to perform a switching function.

[0004] Generally, a pattern is formed on the surface of a substrate in the power module, and the power module is connected to a signal lead through wire bonding or the like so that the power module can perform signal connection with its exterior. In addition, a spacer or the like can be inserted into the power module to define a high-current path, and the power module can be connected to a power lead to extend the high-current path to its exterior.

[0005] When appropriate patterns, wire bonding, spacers, etc. are provided in the power module, structural constraints may occur. Therefore, a solution is needed to variously change the internal structure of the power module to cope with the structural constraints caused by patterns, wire bonding, spacers, etc., and improve electrical performance, cooling performance, etc.

[0006] The information included in the background art section of the present invention is only intended to increase the understanding of the overall background of the present invention, and should not be regarded as an admission or any form of suggestion that this information constitutes the prior art known to those skilled in the art. Summary of the Invention

[0007] Aspects of the present invention are directed to providing a power module configured to improve electrical performance and cooling performance by improving an internal connection structure.

[0008] The technical problems of the present invention are not limited to the above technical problems, and those skilled in the art can clearly understand other technical problems not mentioned above through the following description.

[0009] To achieve the above object, an exemplary embodiment of the present invention provides a power module, the power module comprising: a first substrate and a second substrate spaced apart from each other; at least one semiconductor chip disposed in a separation space between the first substrate and the second substrate; and at least one third substrate disposed in the separation space between the first substrate and the second substrate, wherein the at least one third substrate includes at least one conductive pattern, the conductive pattern including a first end electrically connected to a signal pad of the at least one semiconductor chip and a second end extending outward from the first substrate and the second substrate, and the third substrate has a thickness smaller than each of the first substrate and the second substrate.

[0010] For example, the at least one third substrate may include: a thin film portion extending along the at least one conductive pattern and made of a flexible material to insulate the at least one conductive pattern; and a plurality of terminal portions formed at opposite first and second ends of the conductive pattern and connected to the outside and the signal pads of the at least one semiconductor chip.

[0011] For example, the power module may further include: a first lead including one end connected to another end of the third substrate and another end connected to its outside, the first lead configured to electrically connect the semiconductor chip and its outside.

[0012] For example, the power module may further include: a second lead connected to the first substrate and the second substrate and electrically connecting the first substrate and the second substrate to its outside.

[0013] For example, the second lead may extend outward from the inside of the separation space formed between the first substrate and the second substrate, one surface of the second lead may be bonded to the first substrate in the separation space, and another surface of the second lead may be bonded to the second substrate.

[0014] For example, the first substrate and the second substrate may have different thicknesses.

[0015] For example, at least one semiconductor chip may be bonded to one surface of the first substrate facing the separation space, and the first substrate may have a greater thickness than the second substrate.

[0016] For example, the power module may further include: a first cooling channel disposed on a second surface of the first substrate, and a cooling fluid flowing in the first cooling channel.

[0017] For example, heat dissipation fins may be formed on another surface of the first substrate and arranged to contact the cooling fluid.

[0018] For example, the power module may further include: a second cooling channel disposed on one surface of the second substrate facing outward, and a cooling fluid flows in the second cooling channel.

[0019] For example, the second cooling channel may be thermally connected to the second substrate through a heat transfer material disposed between one surface of the second substrate and the second cooling channel.

[0020] For example, the second cooling channel may be integrated into one surface of the second substrate.

[0021] For example, the power module may further include: at least one chip spacer disposed in a separation space and extending in a direction in which the first substrate and the second substrate are spaced apart from each other, the chip spacer including a first end connected to at least one semiconductor chip and a second end connected to one of the first substrate and the second substrate, the chip spacer configured to space the third substrate apart from either the first substrate or the second substrate.

[0022] For example, the third substrate may include: a thin film portion extending along at least one conductive pattern and made of a flexible material to insulate the at least one conductive pattern; and a plurality of terminal portions formed at opposite first and second ends of the conductive pattern and connected to an external and a signal pad of at least one semiconductor chip, the power module may further include: a first lead including one end connected to the other end of the third substrate and the other end connected to an external and configured to electrically connect the semiconductor chip to its external; and a second lead connected to the first substrate and the second substrate and configured to electrically connect the first substrate and the second substrate to their external.

[0023] For example, a plurality of semiconductor chips may be integrated into one surface of the first substrate facing the separation space, the first substrate may have a greater thickness than the second substrate, the power module may further include a first cooling channel disposed on the other surface of the first substrate and configured to allow a cooling fluid to flow in the first cooling channel.

[0024] According to the various embodiments of the present invention described above, patterns on the substrate for signal connection may be eliminated so that an additional heat dissipation area of the semiconductor chip can be ensured, and a substrate layout having various shapes can be applied.

[0025] In addition, wire bonding for signal connection may be eliminated so that the height of the chip spacer can be reduced, and the reduction in the height of the spacer can improve heat dissipation performance and electrical performance.

[0026] In addition, via spacers used to form high-current paths can be excluded, and the current path can be shortened, so that power performance can be improved, internal space can be additionally ensured, and costs can be reduced.

[0027] The effects that can be achieved by the present invention are not limited to the above effects, and those skilled in the art will clearly understand other effects not mentioned above through the following description.

[0028] The method and apparatus of the present invention have other features and advantages, which will be apparent in the accompanying drawings and subsequent detailed description incorporated herein, or will be described in more detail in the accompanying drawings and subsequent detailed description incorporated herein. These accompanying drawings and detailed description are used together to explain the specific principles of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 is a schematic diagram exemplarily showing a cross-section of a power module according to an exemplary embodiment of the present invention.

[0030] Figure 2 is a schematic diagram exemplarily showing a part of a plan view of a power module according to an exemplary embodiment of the present invention.

[0031] It can be understood that the accompanying drawings are not drawn to scale, but rather present appropriately simplified drawings showing various features illustrating the basic principles of the present invention. Specific design features of the present invention included herein (including, for example, specific dimensions, orientations, positions, and shapes) will be determined in part by the specific application and use environment.

[0032] In these drawings, throughout the several views of the drawings, the same reference numerals denote the same or equivalent parts of the present invention. DETAILED DESCRIPTION

[0033] Reference will now be made in detail to various embodiments of the present invention, examples of which are illustrated in the accompanying drawings and described below. Although the present invention will be described in conjunction with the exemplary embodiments of the present invention, it should be understood that this specification is not intended to limit the present invention to those exemplary embodiments. On the other hand, the present invention is intended to cover not only the exemplary embodiments of the present invention, but also various alternative embodiments, modified embodiments, equivalent embodiments, and other embodiments that may be included within the spirit and scope of the present invention as defined by the appended claims.

[0034] The specific structural and functional descriptions of the embodiments of the present invention disclosed in this specification or application are merely examples for explaining the exemplary embodiments in accordance with the exemplary embodiments of the present invention. The exemplary embodiments of the present invention can be implemented in various forms and should not be construed as limiting the present invention to the exemplary embodiments described in this specification or application.

[0035] Since the exemplary embodiments of the present invention can be changed in various ways and can have various forms, specific embodiments will be shown in the drawings and described in detail in this specification or application. However, the description of the specific embodiments is not intended to limit the embodiments according to the concept of the present invention to the specific embodiments, but it should be understood that the present invention encompasses all modified embodiments, equivalent embodiments, and alternative embodiments that fall within the spirit and technical scope of the present invention.

[0036] Unless otherwise defined, all terms (including technical or scientific terms) used herein include the same meanings as those commonly understood by those skilled in the art to which the present invention pertains. Terms defined in a general dictionary should be interpreted as having meanings consistent with their meanings in the context of the related art, and should not be interpreted as having ideal or overly formal meanings, unless explicitly defined in this specification.

[0037] Hereinafter, various exemplary embodiments included in this specification will be described in detail with reference to the accompanying drawings. The same or similar components are denoted by the same reference numerals regardless of the reference numerals, and their repeated description will be omitted.

[0038] In the following description, suffixes such as "module", "unit", "component", and "part" used to describe components are used together or interchangeably for ease of description, but the suffixes themselves have no distinguishable meaning or function.

[0039] In the description of the exemplary embodiments disclosed in this specification, when it is determined that a specific description may obscure the subject matter of the exemplary embodiments disclosed in this specification, the specific description of the known related art will be omitted. In addition, it should be understood that the provision of the drawings is merely to enable those skilled in the art to easily understand the exemplary embodiments disclosed in this specification, and the technical spirit disclosed in this specification is not limited by the drawings, and includes all modified embodiments, equivalent embodiments, and alternative embodiments that fall within the spirit and technical scope of the present invention.

[0040] Terms including ordinal numbers such as "first", "second", etc. may be used to describe various components, but these components are not limited by the terms. These terms are only used to distinguish one component from another.

[0041] When a component is described as "joined" or "connected" to another component, it should be understood that a component can be joined or directly connected to another component, and there may also be intermediate components between the components. When a component is described as "directly joined" or "directly connected" to another component, it should be understood that there are no intermediate components between the two components.

[0042] Unless clearly described as having a different meaning in the context, singular expressions include plural expressions.

[0043] In this application, it should be understood that the terms "comprising", "comprises", "including", "includes", "containing", "contains", "having", "has" or other variations thereof are inclusive, so the stated features, values, steps, operations, elements, components or combinations thereof are specified, but the presence or addition of one or more other features, values, steps, operations, elements, components or combinations thereof is not excluded.

[0044] The power module according to an exemplary embodiment of the present invention can provide an internal structure that can use a third substrate including a conductive pattern to define a signal connection route, and use first and second leads bonded to the first and second substrates to exclude the pattern of the substrate for signal connection, wire bonding, and the via spacers for forming a high-current path, thereby improving the heat dissipation performance and electrical performance of the power module.

[0045] Hereinafter, the power module according to an exemplary embodiment of the present invention will be described in detail with reference to the accompanying drawings.

[0046] Figure 1 is a schematic diagram exemplarily showing a cross-section of a power module according to an exemplary embodiment of the present invention, Figure 2 is a schematic diagram exemplarily showing a part of a plan view of a power module according to an exemplary embodiment of the present invention.

[0047] With joint reference Figure 1 and Figure 2 , the power module according to an exemplary embodiment of the present invention may include a first substrate 110, a second substrate 120, a semiconductor chip 200, a third substrate 130, a first lead 310, a second lead 320, a first cooling channel 410, a second cooling channel 420, a chip spacer 600, etc. However, Figure 1 and Figure 2 mainly show the components related to the description of the exemplary embodiment of the present invention. However, an actual power module can of course be implemented by including more or fewer components. Hereinafter, the components will be described.

[0048] The first substrate 110 and the second substrate 120 are spaced apart from each other. One surface and the other surface of each of the first substrate 110 and the second substrate 120 may have metal layers 111, 112, 121, and 122, and insulating layers 113 and 123 may be disposed between the metal layers 111, 112, 121, and 122.

[0049] At least one semiconductor chip 200 may be disposed in the separation space between the first substrate 110 and the second substrate 120, and the semiconductor chip 200 may include signal pads to achieve signal connection with its exterior.

[0050] In addition, at least one third substrate 130 may be disposed in the separation space between the first substrate 110 and the second substrate 120. At least one third substrate 130 may include at least one conductive pattern 131, one end of which is electrically connected to the signal pad of at least one of the semiconductor chips 200, and the other end extends outward from the first substrate 110 and the second substrate 120 and has a smaller thickness than the first substrate 110 and the second substrate 120.

[0051] Since the third substrate 130 connects the semiconductor chip 200 to the exterior of the power module, circuit patterns formed on the first substrate 110 and the second substrate 120 can be excluded to achieve signal connection. Therefore, the heat dissipation area of the first substrate 110 and the second substrate 120 can be ensured and various layouts can be applied to the first substrate 110 and the second substrate 120. Structural constraints caused when applying a layout with a complex switching configuration can be eliminated, thereby improving power performance.

[0052] In addition, since the third substrate 130 connects the semiconductor chip 200 and the exterior of the power module, wire bonding for connecting the semiconductor chip 200 to the exterior can be excluded, such that the third substrate 130 has a smaller thickness, thereby eliminating the minimum height constraint of wire bonding. Since the minimum height constraint is eliminated, the separation distance between the first substrate 110 and the second substrate 120 can be shortened so that the current path can be shortened, which can mitigate the deterioration of power performance caused by parasitic components and the like.

[0053] At least one third substrate 130 may include a thin film portion 132 and a plurality of terminal portions 133. The thin film portion 132 extends along at least one of the conductive patterns 131 and is made of a flexible material to insulate the conductive pattern 131. The plurality of terminal portions 133 are each disposed at two opposite ends of the conductive pattern 131 and are configured to connect the signal pad of at least one of the semiconductor chips 200 to its exterior. The third substrate 130 can be implemented as a flexible printed circuit board (PFBC).

[0054] On the other hand, the power module according to an exemplary embodiment of the present invention may further include a first lead 310, which includes one end connected to the other end of the third substrate 130 and the other end connected to the outside and configured to electrically connect the semiconductor chip 200 to the outside thereof. Since the signal connection route is defined by the first lead 310 and the third substrate 130 between the inside and the outside of the power module, the first lead 310 may be represented as a signal lead because the first lead 310 defines the signal connection route.

[0055] In addition, the power module according to an exemplary embodiment of the present invention may further include a second lead 320, which is connected to the first substrate 110 and the second substrate 120 and configured to electrically connect the first substrate 110 and the second substrate 120 to the outside thereof. The second lead 320 may define a signal connection route or a high-current path between the inside and the outside of the power module and may be represented as a signal or power lead according to the defined route.

[0056] The second lead 320 may extend outward from the inside of the separation space between the first substrate 110 and the second substrate 120. In the separation space, one surface of the second lead 320 may be bonded to the first substrate 110, and the other surface of the second lead 320 may be bonded to the second substrate 120. In this case, the bonding process may be performed by, for example, welding, sintering, etc. Since the second lead 320 is connected to both the first substrate 110 and the second substrate 120, a separate via spacer for connecting the first substrate 110 and the second substrate 120 spaced apart from each other may be eliminated.

[0057] Since the via spacer is excluded due to the second lead 320, the current path through which a high current flows may be shortened, which may improve the electrical performance of the power module and reduce the material cost required for setting the via spacer.

[0058] The third substrate 130 may be used to eliminate wire bonding, and the second lead 320 may be used to eliminate the via spacer so that the structural constraint on the internal height of the power module may be alleviated, and the separation distance between the first substrate 110 and the second substrate 120 may be further shortened.

[0059] On the other hand, the first substrate 110 and the second substrate 120 may have different thicknesses. In the case where at least one semiconductor chip 200 is bonded to one surface of the separation space pointing to the first substrate 110, the first substrate 110 may have a greater thickness than the second substrate 120. In this case, since the thickness of the first substrate 110 increases, a heat dissipation area may be ensured, which may be advantageous in implementing a radiator integrated structure on the first substrate where the semiconductor chip 100 is arranged.

[0060] In this case, the first cooling channel 410 through which the cooling fluid C flows may be disposed on another surface of the first substrate 110, and the cooling performance of the first substrate 110 may be additionally improved through the first cooling channel 410.

[0061] A heat sink integrated with the first substrate 110 may be implemented by forming heat dissipation fins F, which are formed on another surface of the first substrate 110 and configured to contact the cooling fluid C. Accordingly, the cooling efficiency may be improved through the first cooling channel 410.

[0062] On the other hand, in addition to the first cooling channel in the first substrate 110, a second cooling channel 420 through which the cooling fluid C flows may be disposed on one surface of the second substrate 120 facing the outside thereof. In this case, the second cooling channel 420 may be thermally connected to the second substrate through a heat transfer material 500 disposed between one surface of the second substrate 120 and the second cooling channel 420. Alternatively, the second cooling channel 420 may be thermally connected to one surface of the second substrate 120 by being bonded to one surface of the second substrate 120 through a bonding material 500'. On the other hand, alternatively, a heat sink may also be integrated with the second substrate 120, and the second cooling channel 420 may be implemented in the same manner as the first cooling channel 410.

[0063] In an exemplary embodiment of the present invention, the second cooling channel 420 is formed of a plurality of channels to increase the contact surface between the second cooling channel 420 and the coolant.

[0064] On the other hand, a power module according to an exemplary embodiment of the present invention may further include at least one chip spacer 600, which is disposed in a partition space between the first substrate 110 and the second substrate 120 and extends in a direction in which the first substrate 110 and the second substrate 120 are spaced apart from each other. The chip spacer 600 includes one end connected to at least one semiconductor chip 200 and the other end connected to any one of the first substrate 110 and the second substrate 120, and the chip spacer 600 is configured to space the third substrate 130 apart from any one of the first substrate 110 and the second substrate 120.

[0065] In this case, since wire bonding and via spacers are excluded, the chip spacer 600 may have a relatively small height. Accordingly, the spacing distance between the first substrate 110 and the second substrate 120 may be shortened, and the power performance may be improved.

[0066] According to the various embodiments of the present invention described above, the patterns on the substrate for signal connection can be eliminated so that the heat dissipation area of the semiconductor chip can be additionally ensured, and a substrate layout with various shapes can be applied.

[0067] In addition, wire bonding for signal connection can be eliminated so that the height of the chip spacer can be reduced, and the reduction in the height of the spacer can improve heat dissipation performance and electrical performance.

[0068] In addition, via spacers for forming high-current paths can be eliminated, and the current path can be shortened so that electrical performance can be improved, internal space can be additionally ensured, and cost can be reduced.

[0069] In addition, the power module according to an exemplary embodiment of the present invention may further include a molding material M. The molding material M may encapsulate at least a portion of the first to third substrates 110, 120, 130, the first lead 310 and the second lead 320, and the chip spacer 600. For example, the molding material M may be implemented with a material such as an epoxy molding compound (EMC) to protect the components constituting the power module from moisture, heat, shock, and the like.

[0070] In an exemplary embodiment of the present invention, a vehicle may be referred to based on a concept including various transportation means. In some cases, a vehicle may be interpreted based on a concept that includes not only various land transportation means traveling on roads, such as cars, motorcycles, large trucks, and buses, but also various transportation means such as airplanes, drones, ships, and the like.

[0071] For the convenience of explanation and to accurately define the appended claims, the terms "upper", "lower", "inner", "outer", "above", "below", "upward", "downward", "front", "rear", "back", "inner", "outer", "inward", "outward", "internal", "external", "inner side", "outer side", "forward", and "backward" are used to describe the features of the exemplary embodiments with reference to the positions of these features shown in the drawings. It will be further understood that the term "connected" or its derivatives refer to both direct and indirect connections.

[0072] The term "and / or" may include combinations of multiple related listed items or any one of multiple related listed items. For example, "A and / or B" includes all three cases such as "A", "B", and "A and B".

[0073] In this specification, unless otherwise stated, singular expressions include plural expressions, unless the context clearly indicates otherwise.

[0074] In an exemplary embodiment of the present invention, "at least one of A and B" may mean "at least one of A or B" or "at least one of a combination of at least one of A and B". Further, "one or more of A and B" may mean "one or more of A or B" or "one or more of a combination of one or more of A and B".

[0075] In an exemplary embodiment of the present invention, it should be understood that terms such as "including" or "having" are intended to specify that the features, numerical values, steps, operations, elements, components, or combinations thereof described in the specification are present, and do not preclude the possibility of adding or existing one or more other features, numerical values, steps, operations, elements, components, or combinations thereof.

[0076] According to an exemplary embodiment of the present invention, components may be combined with each other to be implemented as one, or some components may be omitted.

[0077] The foregoing description of specific exemplary embodiments of the present invention is for purposes of illustration and description. They are not intended to be exhaustive or to limit the invention to the precise forms disclosed, and obviously, many modified and variant embodiments are possible in light of the above teachings. The exemplary embodiments were chosen and described to explain specific principles of the invention and its practical application so that others skilled in the art may implement and utilize the various exemplary embodiments of the invention and its various alternative and modified embodiments. The scope of the invention is intended to be defined by the appended claims and their equivalents.

Claims

1. A power module, comprising: a first substrate and a second substrate spaced apart from each other; at least one semiconductor chip disposed in a separation space between the first substrate and the second substrate; as well as at least one third substrate, the at least one third substrate being arranged in a separation space between the first substrate and the second substrate, Wherein, the at least one third substrate includes at least one conductive pattern, the at least one conductive pattern includes a first end portion electrically connected to a signal pad of at least one semiconductor chip and a second end portion extending outward from the first substrate and the second substrate and connected to the outside of the power module, and the at least one third substrate has a smaller thickness than each of the first substrate and the second substrate.

2. The power module according to claim 1, wherein: The at least one third substrate comprises: a thin film portion extending along the at least one conductive pattern and including a flexible material insulating the at least one conductive pattern; and A plurality of terminal portions are formed at opposite first and second ends of at least one conductive pattern and connected to the outside of the power module and to a signal pad of at least one semiconductor chip.

3. The power module according to claim 1, further comprising: A first lead includes a first end connected to a second end of at least one third substrate and a second end connected to the outside of the power module, the first lead being configured to electrically connect the second end of at least one semiconductor chip and the outside of the power module.

4. The power module according to claim 1, further comprising: Second leads are connected to the first substrate and the second substrate and electrically connect the first substrate and the second substrate with the outside of the power module.

5. The power module according to claim 4, wherein: The second lead extends outward from an interior of a separation space formed between the first substrate and the second substrate, a first surface of the second lead is bonded to the first substrate in the separation space, and a second surface of the second lead is bonded to the second substrate.

6. The power module according to claim 1, wherein: The first substrate and the second substrate have different thicknesses.

7. The power module according to claim 6, wherein: The at least one semiconductor chip is bonded to a first surface of the first substrate facing the partition space, and the first substrate has a greater thickness than the second substrate.

8. The power module according to claim 7, wherein: The first substrate includes a first metal layer, a second metal layer, and an insulating layer between the first metal layer and the second metal layer. The at least one semiconductor chip is bonded to the first metal layer of the first substrate, A first cooling channel is arranged in the second metal layer, and a cooling fluid flows in the first cooling channel.

9. The power module according to claim 8, wherein: The second metal layer at least includes heat dissipation fins arranged in the first cooling channel.

10. The power module according to claim 7, further comprising: A first cooling channel is arranged on the second surface of the first substrate, and a cooling fluid flows in the first cooling channel.

11. The power module according to claim 10, wherein: The heat dissipation fins are formed on the second surface of the first substrate and are arranged to contact with the cooling fluid.

12. The power module according to claim 7, further comprising: A second cooling channel is arranged on one surface of the second base plate facing the outside of the power module, and a cooling fluid flows in the second cooling channel.

13. The power module according to claim 12, wherein: The second cooling channel is thermally connected to the second substrate through a heat transfer material disposed between one surface of the second substrate and the second cooling channel.

14. The power module according to claim 12, wherein: The second cooling channel is coupled to one surface of the second substrate.

15. The power module according to claim 1, further comprising: At least one chip spacer is arranged in the separation space and extends in a direction in which the first substrate and the second substrate are spaced apart from each other, the chip spacer includes a first end connected to the at least one semiconductor chip and a second end connected to one of the first substrate and the second substrate, and the at least one chip spacer is configured to space the at least one third substrate apart from one of the first substrate and the second substrate.

16. The power module according to claim 1, wherein: The at least one third substrate comprises: a thin film portion extending along at least one conductive pattern and including a flexible material insulating the at least one conductive pattern; and a plurality of terminal portions formed at opposite first and second ends of the at least one conductive pattern and connected to the outside of the power module and to a signal pad of the at least one semiconductor chip, Wherein, the power module further comprises: a first lead including a first end connected to the second end of the at least one third substrate and a second end connected to the outside of the power module and configured to electrically connect the at least one semiconductor chip to the outside of the power module; and A second lead is connected to the first substrate and the second substrate and is configured to electrically connect the first substrate and the second substrate to the outside of the power module.

17. The power module according to claim 16, wherein: A plurality of semiconductor chips are bonded to a first surface of the first substrate facing the separation space, The first substrate has a greater thickness than the second substrate, The power module further includes a first cooling channel disposed on the second surface of the first substrate and configured such that a cooling fluid flows in the first cooling channel.

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