Magnetic memory bit and magnetic memory

Abstract

The invention provides a magnetic memory bit and a magnetic memory. The magnetic memory bit comprises an auxiliary layer; a magnetic tunnel junction located on one side of the auxiliary layer; the ferromagnetic layer is provided with a first surface, the ferromagnetic layer is located on the side, away from the auxiliary layer, of the magnetic tunnel junction, the ferromagnetic layer has magnetic moment, the direction of the magnetic moment is the first direction, the first surface is parallel to the first direction, and the first direction is the direction from the ferromagnetic layer to the auxiliary layer; the track layer is provided with a second surface, the second surface is in contact with the first surface, the ferromagnetic layer is introduced into the magnetic storage bit, and the track layer is placed on the side surface of the ferromagnetic layer, so that the etching window of the magnetic tunnel junction is enlarged, and the magnetic moment direction of the free layer in the magnetic tunnel junction is parallel to the magnetic moment direction in the track layer; the technical effect that the magnetic moment of the free layer of the magnetic tunnel junction can be overturned without introducing an external magnetic field is achieved.

Description

Technical Field

[0001] The present application relates to the field of magnetic storage technologies, and more particularly, to a magnetic storage bit and a magnetic memory. Background Art

[0002] In the prior art, the structure of a magnetic random access memory (STO-MRAM) device is a stacked structure. During fabrication, an orbit layer that generates spin current and an MTJ are sequentially grown on a wafer. Etching treatment needs to be performed on the MTJ above the orbit layer. Precise etching capabilities are required during the etching of the MTJ. Otherwise, it is very easy to etch through the orbit layer that is only a few nanometers thick. During the etching process, metal ions are likely to be sputtered onto the etched exposed surface of the barrier layer, resulting in short-circuit failure of the MTJ. Moreover, the direction of the magnetic moment in the free layer of the MTJ is usually perpendicular to the magnetic moment direction of the orbit layer. Therefore, an additional external magnetic field needs to be applied to control the flipping of the free field. Summary of the Invention

[0003] The present application provides a magnetic storage bit and a magnetic memory to solve the problems in the related art that the window for forming the MTJ in the magnetic storage bit is small and an additional magnetic field needs to be applied to control the flipping of the free layer in the MTJ.

[0004] According to one aspect of the present application, a magnetic storage bit is provided, including: an auxiliary layer; a magnetic tunnel junction located on one side of the auxiliary layer; a ferromagnetic layer having a first surface, the ferromagnetic layer being located on the side of the magnetic tunnel junction away from the auxiliary layer, the ferromagnetic layer having a magnetic moment, the direction of the magnetic moment being a first direction, the first surface being parallel to the first direction, and the first direction being the direction pointing from the ferromagnetic layer to the auxiliary layer; and an orbit layer having a second surface, the second surface being in contact with the first surface.

[0005] Optionally, the length of the first surface along a second direction is less than the length of the second surface along the second direction, the second direction being perpendicular to the first direction and parallel to the second surface.

[0006] Optionally, the orbit layer is a symmetric structure, the orbit layer has a first central axis, the ferromagnetic layer has a second central axis, the perpendicular projection of the first central axis on the first surface is a first projection, the perpendicular projection of the second central axis on the first surface is a second projection, and the first projection coincides with the second projection.

[0007] Optionally, the material of the orbit layer includes any one or more of W, Ta, Pt, and Bi.

[0008] Optionally, the orbit layer has a third surface opposite to the second surface, and the perpendicular distance between the second surface and the third surface is less than or equal to 10 nm.

[0009] Optionally, the magnetic storage bit further includes a coupling layer located between the magnetic tunnel junction and the ferromagnetic layer. The magnetic tunnel junction includes a free layer, a barrier layer, and a reference layer stacked in sequence along a first direction. The coupling layer is in contact with the free layer.

[0010] Optionally, the material of the coupling layer includes any one or more of Mo, Ru, Ta, and Ir.

[0011] Optionally, the orbital layer is a symmetric structure with a first central axis. The magnetic storage bit further includes a top electrode located on the side of the auxiliary layer away from the magnetic tunnel junction, and a bottom electrode located on the side of the orbital layer away from the magnetic tunnel junction. The bottom electrode includes a first bottom electrode and a second bottom electrode symmetrically arranged along the first central axis.

[0012] According to another aspect of the present application, a magnetic memory is provided, including a plurality of magnetic storage bits, and the magnetic storage bits are the above-mentioned magnetic storage bits.

[0013] Optionally, the magnetic memory further includes a first control circuit for controlling the magnetic storage bit to perform read / write data operations. The first control circuit includes a first transistor having a first source, a first gate, and a first drain. The first drain is electrically connected to the first bottom electrode of the magnetic storage bit; a first source line electrically connected to the first source; a first bit line electrically connected to the top electrode of the magnetic storage bit; a first word line electrically connected to the first gate; and a floating pin electrically connected to the second bottom electrode of the magnetic storage bit.

[0014] Optionally, the magnetic memory further includes a second control circuit for controlling the magnetic storage bit to perform read / write data operations. The second control circuit includes a second transistor having a second source, a second gate, and a second drain. The second drain is electrically connected to the first bottom electrode; a third transistor having a third source, a third gate, and a third drain. The third drain is electrically connected to the top electrode; a second source line electrically connected to the second source and the third source; a second bit line electrically connected to the second bottom electrode; a second word line electrically connected to the second gate; and a third word line electrically connected to the third gate.

[0015] Through the technical solution of the present application, a magnetic storage bit is proposed, which includes an auxiliary layer, a magnetic tunnel junction, a ferromagnetic layer, and an orbital layer. The magnetic tunnel junction is located on one side of the auxiliary layer. The ferromagnetic layer has a first surface and is located on the side of the magnetic tunnel junction away from the auxiliary layer. The ferromagnetic layer has a magnetic moment, and the direction of the magnetic moment is the first direction. The first surface is parallel to the first direction, and the first direction is the direction pointing from the ferromagnetic layer to the auxiliary layer. The orbital layer has a second surface, and the second surface is in contact with the first surface. By introducing a ferromagnetic layer into the magnetic storage bit and placing the orbital layer on the side of the ferromagnetic layer, not only the etching window of the magnetic tunnel junction is increased, but also the direction of the free layer magnetic moment in the magnetic tunnel junction is parallel to the direction of the magnetic moment in the orbital layer, achieving the technical effect of flipping the free layer magnetic moment of the magnetic tunnel junction without introducing an external magnetic field. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The drawings forming a part of this application are used to provide a further understanding of the present application. The schematic embodiments and descriptions thereof of the present application are used to explain the present application and do not constitute an improper limitation of the present application. In the drawings:

[0017] Figure 1 shows a schematic structural diagram of a magnetic storage bit structure from a first perspective provided in an embodiment of the present application;

[0018] Figure 2 shows a cross-sectional schematic diagram of a magnetic storage bit structure from a second perspective provided in an embodiment of the present application;

[0019] Figure 3 shows a schematic structural diagram of a magnetic storage bit structure from a third perspective provided in an embodiment of the present application;

[0020] Figure 4 shows a schematic structural diagram of a magnetic storage bit structure from a first perspective provided in an embodiment of the present application;

[0021] Figure 5 shows a three-dimensional structural diagram of a magnetic memory structure provided in an embodiment of the present application;

[0022] Figure 6 shows a schematic diagram of a read / write magnetic tunnel junction data circuit structure in a magnetic memory structure provided in an embodiment of the present application;

[0023] Figure 7 shows a schematic diagram of a read / write magnetic tunnel junction data circuit structure in another magnetic memory structure provided in an embodiment of the present application;

[0024] Figure 8 shows a partial structural schematic diagram of another magnetic memory structure provided in an embodiment of the present application.

[0025] Among them, the above-mentioned drawings include the following reference numerals:

[0026] 10. Top electrode; 20. Auxiliary layer; 30. Magnetic tunnel junction; 301. Reference layer; 302. Barrier layer; 303. Free layer; 40. Ferromagnetic layer; 50. Orbital layer; 60. Bottom electrode; 601. First bottom electrode; 602. Second bottom electrode; 70. Coupling layer; 80. Magnetic tunnel junction and ferromagnetic layer; 90. Insulating layer. Detailed implementation manners

[0027] It should be noted that, without conflict, the embodiments in the present application and the features in the embodiments may be combined with each other. The present application will be described in detail below with reference to the drawings and in combination with the embodiments.

[0028] In order to enable those skilled in the art to better understand the solution of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present application.

[0029] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and do not necessarily need to be used to describe a specific order or sequence. It should be understood that such data can be interchanged under appropriate circumstances so as to implement the embodiments of the present application described herein. In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device including a series of steps or units does not necessarily have to be limited to those steps or units clearly listed, but may include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0030] In the prior art, the structure of the STO-MRAM device is a stacked structure. During fabrication, the orbital layer that generates spin current and the MTJ are sequentially grown on the wafer. Etching treatment needs to be performed on the MTJ above the orbital layer. Precise etching ability is required during the etching of the MTJ. Otherwise, it is very easy to etch through the orbital layer that is only a few nanometers thick. During the etching process, metal ions are likely to splash onto the etched exposed surface of the barrier layer, resulting in the short-circuit failure of the MTJ. Moreover, the magnetic moment direction in the free layer of the MTJ is usually perpendicular to the magnetic moment direction of the orbital layer. Therefore, an additional external magnetic field needs to be applied to control the flipping of the free field.

[0031] Therefore, the present application studies the above problems and proposes a magnetic storage bit, such asFigures 1 to 2 As shown, it includes: an auxiliary layer 20; a magnetic tunnel junction 30 located on one side of the auxiliary layer 20; a ferromagnetic layer 40 which has a first surface and is located on the side of the magnetic tunnel junction 30 away from the auxiliary layer 20. The ferromagnetic layer 40 has a magnetic moment, the direction of the magnetic moment is the first direction X, the first surface is parallel to the first direction X, and the first direction X is the direction pointing from the ferromagnetic layer 40 to the auxiliary layer 20; an orbital layer 50 which has a second surface, and the second surface is in contact with the first surface.

[0032] In this application, by introducing the ferromagnetic layer 40 into the magnetic storage bit and placing the orbital layer 50 on the side of the ferromagnetic layer 40, not only the etching window of the magnetic tunnel junction 30 is increased, but also the direction of the free layer magnetic moment in the magnetic tunnel junction 30 is parallel to the direction of the magnetic moment in the orbital layer 50, achieving the technical effect of flipping the free layer magnetic moment of the magnetic tunnel junction 30 without introducing an external magnetic field.

[0033] In the above optional embodiment, as Figures 1 to 2 shown, the magnetic storage bit includes an auxiliary layer 20, a magnetic tunnel junction 30, a ferromagnetic layer 40 and an orbital layer 50, wherein the ferromagnetic layer 40, the magnetic tunnel junction 30 and the auxiliary layer 20 are stacked in sequence, and the direction pointing from the ferromagnetic layer 40 to the auxiliary layer 20 is set as the first direction X. The ferromagnetic layer 40 has a magnetic moment and will generate a coupling effect with the magnetic tunnel junction 30 to control the magnetic moment direction of the magnetic tunnel junction 30 to be consistent with the magnetic moment direction of the ferromagnetic layer 40. The first surface of the ferromagnetic layer 40 is in contact with the second surface of the orbital layer 50.

[0034] The above magnetic tunnel junction 30 can have various forms according to the application situation, including but not limited to in-plane MTJ, perpendicular MTJ, top-pinned MTJ, bottom-pinned MTJ, double-layer MgO MTJ, single-layer MgO MTJ and multi-state MTJ.

[0035] In some optional embodiments, as Figures 1 to 2 shown, the length of the first surface along the second direction Y is less than the length of the second surface along the second direction Y. The second direction Y is perpendicular to the first direction X and parallel to the second surface.

[0036] In the above optional embodiment, as Figures 1 to 2 shown, the first surface of the above ferromagnetic layer 40 is in contact with the second surface of the orbital layer 50. The length of the second surface along the second direction Y is greater than the length of the first surface along the second direction Y. The second direction Y is parallel to the second surface and perpendicular to the first direction X.

[0037] It should be noted that Figure 1 is a schematic cross-sectional view of the magnetic storage bit along the third direction Z. Figure 2It is a schematic cross-sectional view along the second direction Y. The first direction X, the second direction Y, and the third direction Z are perpendicular to each other in pairs.

[0038] In some alternative embodiments, such as Figures 1 to 2 shown, the orbital layer 50 is a symmetric structure. The orbital layer 50 has a first central axis, and the ferromagnetic layer 40 has a second central axis. The perpendicular projection of the first central axis on the first surface is the first projection, and the perpendicular projection of the second central axis on the first surface is the second projection. The first projection coincides with the second projection.

[0039] In the above alternative embodiments, such as Figures 1 to 2 shown, both the orbital layer 50 and the ferromagnetic layer 40 are symmetric structures. The orbital layer 50 has a first central axis, and the ferromagnetic layer 40 has a second central axis. The projections of the first central axis and the second central axis on the first surface are the first projection and the second projection respectively, and the positions of the first projection and the second projection coincide. In other words, the axis of symmetry of the surface of the orbital layer 50 in contact with the ferromagnetic layer 40 is collinear with the axis of symmetry of the surface of the ferromagnetic layer 40 in contact with the orbital layer 50. The orbital layer 50 and the ferromagnetic layer 40 can also be regarded as an integral body with a symmetric structure, and this integral body shares a central axis.

[0040] In some alternative embodiments, the material of the orbital layer 50 includes any one or more of: W, Ta, Pt, Cu, BiSe, and Bi.

[0041] In the above alternative embodiments, the material of the orbital layer 50 needs to be selected from heavy metals or topological materials with a relatively large spin Hall angle, which have a strong spin-orbit coupling effect. Among them, heavy metals and topological materials can generate a relatively large spin Hall angle, which makes them very effective in generating and manipulating spin current. The edge states or surface states of topological materials have non-trivial topological properties, which can protect the spin current from the influence of local defects, thereby improving the transmission efficiency of the spin current. It should be noted that the material of the orbital layer 50 is not limited to the above material types, and those skilled in the art can reasonably select the orbital layer material.

[0042] In some alternative embodiments, such as Figure 2 shown, the orbital layer 50 has a third surface opposite to the second surface. The perpendicular distance H1 between the second surface and the third surface is less than or equal to 10 nm.

[0043] In the above alternative embodiments, such as Figure 2As shown, the structure of the orbital layer 50 has a third surface opposite to the second surface. The perpendicular distance between the third surface and the second surface is the thickness of the orbital layer 50, which is within 10 nm. The performance of the orbital layer 50 is significantly enhanced or more prominent under relatively thin dimensions. When the thickness of the orbital layer 50 is less than 10 nm, it can better generate a spin current in a specific direction.

[0044] In the above optional embodiment, as Figures 2 to 3 shown, an insulating layer 90 is further provided on the second surface of the orbital layer 50. The insulating layer 90 is located in the area where the second surface does not contact the ferromagnetic layer 40 and is in contact with the second surface, reducing the energy loss and current leakage of the orbital layer 50, and can provide protection for the ferromagnetic layer 40 to prevent the ferromagnetic layer 40 from being damaged by the external environment. The material of the insulating layer 90 can be insulating materials such as alumina and silica, which are not specifically limited in this application. The magnetic storage bit has a bottom electrode 60, an orbital layer 50, an insulating layer 90, a ferromagnetic layer 40, a magnetic tunnel junction 30, an auxiliary layer 20, and a top electrode 10 in sequence along the first direction X. Among them, the bottom electrode 60 has a first bottom electrode 601 and a second bottom electrode 602, and the direction in which the first bottom electrode 601 points to the second bottom electrode 602 is the second direction Y. Figure 3 is a cross-sectional view along the third direction Z, and Figure 3 the shown third perspective is opposite to Figure 1 the first perspective shown.

[0045] Exemplarily, as Figure 2 shown, the shape of the orbital layer 50 is "L"-shaped. It should be noted that the orbital layer 50 in this application is not limited to Figure 2 the "L"-shape shown. Those skilled in the art can reasonably select the shape of the orbital layer according to specific circumstances, which is not specifically limited in this application.

[0046] In some optional embodiments, as Figure 4 shown, the magnetic storage bit further includes a coupling layer 70. The coupling layer 70 is located between the magnetic tunnel junction 30 and the ferromagnetic layer 40. The magnetic tunnel junction 30 includes a free layer 303, a barrier layer 302, and a reference layer 301 stacked in sequence along the first direction X. The coupling layer 70 is in contact with the free layer 303.

[0047] In the above optional embodiment, Figure 4 is a cross-sectional view along the third direction Z. The third direction Z is perpendicular to the first direction X and the second direction Y. As Figure 4As shown, the magnetic storage bit also includes a coupling layer 70 and a ferromagnetic layer 40. The coupling layer 70, the ferromagnetic layer 40, and the magnetic tunnel junction 30 are stacked in sequence along the first direction X. The coupling layer 70 is in contact with the free layer 303. There is a strong magnetic coupling effect between the coupling layer 70 and the free layer 303. Through the coupling layer 70, the magnetic moment direction of the free layer 303 can be determined, and the magnetic moment direction of the free layer 303 is parallel to the magnetic moment direction in the orbital layer 50, achieving the technical effect of flipping the magnetic moment of the free layer 303 of the magnetic tunnel junction 30 without introducing an external magnetic field.

[0048] In the above optional embodiment, as Figure 4 shown, the material of the coupling layer 70 includes any one or more of Mo, Ru, Ta, and Ir. Those skilled in the art can reasonably select the material of the coupling layer, and this application does not make specific limitations.

[0049] In some optional embodiments, as Figure 4 shown, the orbital layer 50 is a symmetric structure with a first central axis. The magnetic storage bit further includes a top electrode 10 located on the side of the auxiliary layer 20 away from the magnetic tunnel junction 30, and a bottom electrode 60 located on the side of the orbital layer 50 away from the magnetic tunnel junction 30. The bottom electrode 60 includes a first bottom electrode 601 and a second bottom electrode 602 symmetrically arranged along the first central axis.

[0050] In the above optional embodiment, as Figure 4 shown, the magnetic storage bit also includes a top electrode 10 and a bottom electrode 60. Among them, the magnetic tunnel junction 30, the auxiliary layer 20, and the top electrode 10 are stacked in sequence along the first direction X. The orbital layer 50 is a symmetric structure, and the bottom electrode 60 is symmetrically distributed on both sides of the first central axis of the orbital layer 50, and is the first bottom electrode 601 and the second bottom electrode 602 in sequence along the second direction Y. The structure of the entire magnetic storage bit is a symmetric structure.

[0051] Exemplarily, the magnetic storage bit in this application includes: as Figures 1 to 3As shown, the magnetic storage bit includes an auxiliary layer 20, a magnetic tunnel junction 30, a ferromagnetic layer 40, and an orbital layer 50. The ferromagnetic layer 40, the magnetic tunnel junction 30, and the auxiliary layer 20 are stacked in sequence. The direction of the ferromagnetic layer 40 pointing to the auxiliary layer 20 is set as the first direction X. The ferromagnetic layer 40 has a magnetic moment, which will produce a coupling effect with the magnetic tunnel junction 30, controlling the magnetic moment direction of the magnetic tunnel junction 30 to be consistent with the magnetic moment direction of the ferromagnetic layer 40. The first surface of the ferromagnetic layer 40 is in contact with the second surface of the orbital layer 50. The length of the second surface along the second direction Y is greater than the length of the first surface along the second direction Y. The second direction Y is parallel to the second surface and perpendicular to the first direction X. Both the orbital layer 50 and the ferromagnetic layer 40 are symmetric structures. The orbital layer 50 has a first central axis, and the ferromagnetic layer 40 has a second central axis. The first central axis and the second central axis have projections on the first surface, which are the first projection and the second projection respectively, and the positions of the first projection and the second projection coincide. In other words, the orbital layer 50 and the ferromagnetic layer 40 can be regarded as an integral body with a symmetric structure, and this integral body shares a central axis. The material of the orbital layer 50 needs to be selected from heavy metals or topological materials with a relatively large spin Hall angle, which have a strong spin-orbit coupling effect. The heavy metals and topological materials can generate a relatively large spin Hall angle, which makes them very effective in generating and manipulating spin current. The edge states or surface states of topological materials have non-trivial topological properties, which can protect the spin current from the influence of local defects, thereby improving the transmission efficiency of the spin current. An insulating layer 90 can also be provided on the second surface of the orbital layer 50. The insulating layer is located in other regions of the second surface that are not in contact with the ferromagnetic layer 40 and is in contact with the second surface. The orbital layer 50 has a third surface opposite to the second surface in its structure. The perpendicular distance between the third surface and the second surface is the thickness of the orbital layer 50, and the thickness is within 10 nm. The performance of the orbital layer 50 is significantly enhanced or more prominent at a relatively thin size. When the thickness of the orbital layer 50 is less than 10 nm, the orbital layer 50 can better generate a spin current in a specific direction. The magnetic storage bit also has a coupling layer 70. The ferromagnetic layer 40, the coupling layer 70, and the magnetic tunnel junction 30 are stacked in sequence along the first direction X. The coupling layer 70 is in contact with the free layer 303. Due to the presence of the coupling layer 70 between the ferromagnetic layer 40 and the free layer 303, a strong magnetic coupling effect is generated between the ferromagnetic layer 40 and the free layer 303 under the action of the coupling layer 70. The magnetic moment direction of the free layer 303 can be determined through the ferromagnetic layer 40, and the magnetic moment direction of the free layer 303 is parallel to the magnetic moment direction in the orbital layer 50. The magnetic storage bit also has a top electrode 10 and a bottom electrode 60. The magnetic tunnel junction 30, the auxiliary layer 20, and the top electrode 10 are stacked in sequence along the first direction X. The bottom electrode 60 is symmetrically distributed on both sides of the first central axis, and along the second direction Y, they are the first bottom electrode 601 and the second bottom electrode 602 in sequence. By introducing the ferromagnetic layer 40 into the magnetic storage bit and placing the orbital layer 50 on the side of the ferromagnetic layer 40,Not only does it increase the etching window of the magnetic tunnel junction 30, but it also makes the direction of the free layer magnetic moment in the magnetic tunnel junction 30 parallel to the direction of the magnetic moment in the orbital layer 50, achieving the technical effect of being able to flip the free layer magnetic moment of the magnetic tunnel junction 30 without introducing an external magnetic field.

[0052] According to another embodiment of the present application, there is also provided a magnetic memory, including a plurality of magnetic storage bits, and the magnetic storage bits are the magnetic storage bits in the above embodiment.

[0053] Through the above magnetic memory of the present application, not only can the etching window of the magnetic tunnel junction 30 be increased, but also the direction of the free layer magnetic moment in the magnetic tunnel junction 30 is parallel to the direction of the magnetic moment in the orbital layer 50, achieving the technical effect of being able to flip the free layer magnetic moment of the magnetic tunnel junction 30 without introducing an external magnetic field.

[0054] Specifically, as Figure 5 shown, it is a partial schematic diagram of a magnetic memory in an embodiment of the present application, which shows two adjacent magnetic storage bits in the magnetic memory. Each storage bit has an auxiliary layer 20, a magnetic tunnel junction 30, a ferromagnetic layer 40, an orbital layer 50, and an insulating layer 90. A part of the second surface of the orbital layer 50 is in contact with the ferromagnetic layer 40, and another part of the second surface is in contact with the insulating layer 90. The adjacent two magnetic storage bits do not share the orbital layer 50 and are two independent parts.

[0055] In some optional embodiments, as Figure 6 shown, the magnetic memory further includes a first control circuit, and the first control circuit is used to control the magnetic storage bit to perform read / write data operations. The first control circuit includes a first transistor M1, a first source line SL1, a first word line WL1, and a floating pin NO PORT, where: the first transistor M1 has a first source, a first gate, and a first drain, and the first drain is electrically connected to the first bottom electrode 601 of the magnetic storage bit; the first source line SL1 is electrically connected to the first source; the first bit line BL1 is electrically connected to the top electrode 10 of the magnetic storage bit; the first word line WL1 is electrically connected to the first gate; and the floating pin NO PORT is electrically connected to the second bottom electrode 602 of the magnetic storage bit.

[0056] In the above optional embodiment, as Figure 6As shown, the magnetic memory can read or write data. When reading or writing data, the magnetic memory needs to work together with a read circuit, a write circuit, and magnetic storage bits. The first control circuit in the magnetic memory includes a first transistor M1, a first source line SL1, a first bit line BL1, a first word line WL1, and a floating pin NO PORT. The first drain in the first transistor M1 is electrically connected to the first bottom electrode 601, the first source in the first transistor M1 is electrically connected to the first source line SL1, the first gate in the first transistor M1 is electrically connected to the first word line WL1, and the first bit line BL1 is electrically connected to the top electrode 10.

[0057] It should be noted that whether the above floating pin NO PORT is in a floating state, a grounded state, or a voltage-applied state needs to be determined according to whether the magnetic tunnel junction is in a data reading state or a data writing state.

[0058] In the above optional embodiment, when the power is turned on for the track layer, a spin current is generated in the track layer and flows into the ferromagnetic layer from the contact surface between the track layer and the ferromagnetic layer. This spin current makes the magnetic moment direction of the ferromagnetic layer parallel or antiparallel to the first direction X. When the current is large enough, the magnetic moment direction of the ferromagnetic layer can be flipped from an antiparallel state to a parallel state with the magnetic moment direction generated by the spin current, realizing the control of the ferromagnetic layer, and then realizing the control of the free layer, and realizing the work of writing different data states for the magnetic tunnel junction. By introducing a ferromagnetic layer into the magnetic storage bit and placing the track layer on the side of the ferromagnetic layer, not only the etching window of the magnetic tunnel junction is increased, but also the magnetic moment direction of the free layer in the magnetic tunnel junction is parallel to the magnetic moment direction in the track layer, achieving the technical effect of flipping the magnetic moment of the free layer of the magnetic tunnel junction without introducing an external magnetic field.

[0059] In the above optional embodiment, Figure 6 is a cross-sectional view along the third direction Z, and the third direction Z is perpendicular to the first direction X and the second direction Y, as Figure 6As shown, the first control circuit can enable the magnetic random access memory to control the magnetic storage bit to perform read or write operations through different connection methods. Exemplarily, when power is applied to the first source line SL1 and the first word line WL1, and the floating pin NO PORT is grounded, the magnetic storage bit will perform the write data operation. At this time, if the free layer magnetic moment is in the first direction X, the data of the magnetic tunnel junction is in the parallel state, and when the free layer magnetic moment is in the opposite direction of the first direction X, the data of the magnetic tunnel junction is in the antiparallel state. Since there is a coupling layer between the ferromagnetic layer and the free layer, a strong magnetic coupling effect is generated between the ferromagnetic layer and the free layer under the action of the coupling layer, and the magnetic moment direction of the free layer can be controlled to be consistent with the magnetic moment direction of the ferromagnetic layer. When power is applied to the first word line WL1 to control the first transistor M1 to turn on, and power is applied to the first source line SL1, if the direction of the applied current is the second direction Y, a spin current with a magnetic moment direction opposite to the first direction X will be generated inside the orbital layer. When the spin current flows through the ferromagnetic layer, it will flow into the ferromagnetic layer in the form of spin injection. When it is necessary to write the data state of the magnetic tunnel junction as the antiparallel state, only need to increase the current, so that the magnetic moment in the orbital layer drives the magnetic moment of the ferromagnetic layer to flip, and the magnetic moment direction of the ferromagnetic layer is flipped to the direction opposite to the first direction X. The ferromagnetic layer further couples the magnetic moment direction of the free layer to be along the direction opposite to the first direction X, realizing the writing of the data state of the magnetic tunnel junction as the antiparallel state; when it is necessary to write the data state of the magnetic tunnel junction as the parallel state, a current in the direction opposite to the second direction Y can be applied to the orbital layer to generate a spin current with a magnetic moment along the first direction X in the orbital layer, flip the magnetic moment of the ferromagnetic layer, and then drive the free layer to flip, realizing the writing of the antiparallel state.

[0060] Exemplarily, as Figure 6 shown, when a voltage is applied to the first word line WL1 to ensure that the M1 transistor is turned on, and a voltage is applied to the first source line SL1 or the first bit line BL1, and the other end is grounded, the magnetic storage bit will perform the read data operation. By judging the resistance value, it can be judged whether the magnetic moment directions of the free layer and the reference layer in the magnetic tunnel junction are consistent, and then the data state of the magnetic tunnel junction can be judged. For example, when the magnetic moment directions of the free layer and the reference layer are opposite, the magnetic tunnel junction is in the "0" state, that is, the antiparallel state; when the magnetic moment directions of the free layer and the reference layer are the same, the magnetic tunnel junction is in the "1" state, that is, the parallel state; it should be noted that the voltage applied during the data read operation is much lower than the voltage during the data write operation.

[0061] In some alternative embodiments, as Figure 7As shown in the figure, the magnetic memory further includes a second control circuit, which is used to control the magnetic storage bit to read / write data. The second control circuit includes a second transistor M2, a third transistor M3, a second bit line BL2, a second source line SL2, a second word line WL2, and a third word line WL3, where: The second transistor M2 has a second source, a second gate, and a second drain, and the second drain is electrically connected to the first bottom electrode 601; The third transistor M3 has a third source, a third gate, and a third drain, and the third drain is electrically connected to the top electrode 10; The second source line SL2 is electrically connected to the second source and the third source; The second bit line BL2 is electrically connected to the second bottom electrode 602; The second word line WL2 is electrically connected to the second gate; The third word line WL3 is electrically connected to the third gate.

[0062] In the above optional embodiment, as Figure 7 shown, the second control circuit in the magnetic memory includes a second transistor M2, a third transistor M3, a second bit line BL2, a second word line WL2, and a third word line WL3, where the second source line SL2 is electrically connected to the second source of the second transistor M2 and the third source of the third transistor M3, the second word line WL2 is electrically connected to the second gate of the second transistor M2, the third word line WL3 is electrically connected to the third gate of the third transistor M3, the third drain of the third transistor M3 is electrically connected to the top electrode 10, the second drain of the second transistor M2 is electrically connected to the first bottom electrode 601, the second bit line BL2 is electrically connected to the second bottom electrode 602, as Figure 8 shown, it is a device connection diagram of the second control circuit, including the second control circuit and the magnetic storage bit. The second control circuit has a second bit line BL2, a second source line SL2, a second transistor M2, and a third transistor M3. The magnetic storage bit includes a top electrode 10, a magnetic tunnel junction, a ferromagnetic layer 80, an orbital layer 50, and a bottom electrode 60. The second bit line BL2 is electrically connected to the second transistor M2 and the third transistor M3 respectively. The second transistor M2 is electrically connected to a bottom electrode 60, the third transistor M3 is electrically connected to the top electrode 10, and the second source line SL2 is electrically connected to another bottom electrode 60.

[0063] In the above optional embodiment, as Figure 7 shown, the second bit line BL2, the second transistor M2, and the second source line SL2 form a first branch, and the second bit line BL2, the third transistor M3, and the second source line SL2 form a second branch. The first branch is the write circuit of the magnetic memory, and the second branch is the read circuit of the magnetic memory. The principles of reading data and writing data are the same as those of the first control circuit and will not be described repeatedly here.

[0064] It should also be noted that the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, such that a process, method, commodity or device comprising a series of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, commodity or device. Without further limitation, an element defined by the statement "comprising an..." does not exclude the presence of additional identical elements in the process, method, commodity or device comprising the element.

[0065] The above are only embodiments of the present application and are not intended to limit the present application. For those skilled in the art, various changes and modifications can be made to the present application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included within the scope of the claims of the present application.

Claims

1. A magnetic storage bit, characterized in that, Comprising: An auxiliary layer; A magnetic tunnel junction, located on one side of the auxiliary layer; A ferromagnetic layer, the ferromagnetic layer having a first surface, the ferromagnetic layer being located on the side of the magnetic tunnel junction away from the auxiliary layer, the ferromagnetic layer having a magnetic moment, the direction of the magnetic moment being a first direction, the first surface being parallel to the first direction, and the first direction being the direction pointing from the ferromagnetic layer to the auxiliary layer; An orbital layer, the orbital layer having a second surface, the second surface being in contact with the first surface.

2. The magnetic storage bit according to claim 1, characterized in that, The length of the first surface in the second direction is less than the length of the second surface in the second direction, the second direction being perpendicular to the first direction and parallel to the second surface.

3. The magnetic storage bit according to claim 1, characterized in that, The orbital layer is a symmetric structure, the orbital layer having a first central axis, the ferromagnetic layer having a second central axis, the perpendicular projection of the first central axis on the first surface being a first projection, the perpendicular projection of the second central axis on the first surface being a second projection, and the first projection coinciding with the second projection.

4. The magnetic storage bit according to any one of claims 1 to 3, characterized in that, The material of the orbital layer includes any one or more of W, Ta, Pt, Cu, BiSe, and Bi.

5. The magnetic storage bit according to any one of claims 1 to 3, characterized in that, The orbital layer has a third surface opposite to the second surface, and the perpendicular distance between the second surface and the third surface is less than or equal to 10 nm.

6. The magnetic storage bit according to any one of claims 1 to 3, characterized in that, The magnetic storage bit further includes a coupling layer, the coupling layer being located between the magnetic tunnel junction and the ferromagnetic layer, the magnetic tunnel junction including a free layer, a barrier layer, and a reference layer sequentially stacked in the first direction, and the coupling layer being in contact with the free layer.

7. The magnetic storage bit according to any one of claims 6, characterized in that, The material of the coupling layer includes any one or more of Mo, Ru, Ta, and Ir.

8. The magnetic storage bit according to any one of claims 1 to 3, characterized in that, The orbital layer is a symmetric structure and has a first central axis. The magnetic storage bit further includes: A top electrode, located on the side of the auxiliary layer away from the magnetic tunnel junction; A bottom electrode, located on the side of the orbital layer away from the magnetic tunnel junction, and the bottom electrode includes a first bottom electrode and a second bottom electrode symmetrically arranged along the first central axis.

9. A magnetic memory, comprising a plurality of magnetic storage bits, characterized in that, The magnetic storage bit is the magnetic storage bit according to any one of claims 1 to 8.

10. The magnetic memory according to claim 9, characterized in that, The magnetic memory further includes a first control circuit for controlling the magnetic storage bit to perform read / write data operations. The first control circuit includes: A first transistor, the first transistor having a first source, a first gate, and a first drain, and the first drain being electrically connected to the first bottom electrode of the magnetic storage bit; A first source line, electrically connected to the first source; A first bit line, electrically connected to the top electrode of the magnetic storage bit; A first word line, electrically connected to the first gate; A floating pin, electrically connected to the second bottom electrode of the magnetic storage bit.

11. The magnetic memory according to claim 10, characterized in that, The magnetic memory further includes a second control circuit for controlling the magnetic storage bit to perform read / write data operations. The second control circuit includes: A second transistor, the second transistor having a second source, a second gate, and a second drain, and the second drain being electrically connected to the first bottom electrode; A third transistor having a third source, a third gate, and a third drain, the third drain being electrically connected to the top electrode; A second source line electrically connected to the second source and the third source; A second bit line electrically connected to the second bottom electrode; A second word line electrically connected to the second gate; A third word line electrically connected to the third gate.

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