Atomic layer deposition apparatus and manufacturing method of atomic layer deposition

Abstract

The invention provides an atomic layer deposition device. The atomic layer deposition device comprises a gas input module and a sprinkler head, the gas input module comprises a plurality of gas conveying pipelines. The spraying head is connected with the gas input module and comprises a gas inlet part, a cavity and a spraying head. The cavity is provided with an input port and an opposite output port, the cavity is connected with the air inlet part through the input port, and the input port is smaller than the output port. The nozzle is connected to the cavity through the output port and comprises a plurality of spray holes. The multiple gas conveying pipelines are arranged at intervals in an annular mode. The invention further provides a manufacturing method of the atomic layer deposition.

Description

Technical Field

[0001] The present invention relates to an atomic layer deposition apparatus, particularly an atomic layer deposition apparatus having a plurality of gas inlet pipes. Background Art

[0002] Existing atomic layer deposition apparatuses include a chamber, upper and lower electrodes, a showerhead, a stage, an exhaust system, and a precursor gas disk assembly. The showerhead can transport precursor gases to form a thin film in the reaction chamber. The precursor is input through a gas pipeline and a chamber inlet, and is evenly dispersed onto the substrate surface through the showerhead.

[0003] Therefore, in order to improve the uniformity of the gas field for transporting the precursor to the substrate, usually by adjusting the aperture size, aperture shape, and aperture position of the showerhead, etc., so as to evenly distribute the reaction precursor onto the substrate surface.

[0004] However, with the industrial requirements, the requirement for film uniformity is getting higher and higher, and the structural design of the showerhead has become more and more complex. For example, the design of the hole size, shape, and distribution thereof has led to an increase in the manufacturing cost of the showerhead and an increase in the manufacturing cost of the project. And if the holes are too small, it is easy to cause blockage of the holes, resulting in uneven air flow and oscillating abnormal discharge. Thus, it will cause dust and uneven film thickness in the film deposition, which is not conducive to film growth.

[0005] Therefore, how to improve the efficiency of the deposited thin film manufacturing process through the improvement of the structural design of the gas pipeline, chamber, and showerhead to overcome the above defects has become one of the important issues to be solved in this industry. Summary of the Invention

[0006] The technical problem to be solved by the present invention is to provide an atomic layer deposition apparatus in view of the deficiencies of the prior art. Through the structural design of the gas input module and the showerhead, the uniformity of the gas field in the chamber is improved, the aperture of the showerhead is made consistent, the manufacturing difficulty of the showerhead is reduced, and the production cost is reduced. In addition, through the structural design of the gas input module and the showerhead, blockage of the spray holes can be avoided, resulting in dust and uneven film thickness in the film deposition.

[0007] To solve the above technical problems, one of the technical solutions adopted by the present invention is to provide an atomic layer deposition apparatus, including a gas input module and a showerhead. The gas input module includes a plurality of gas pipelines. The showerhead is connected to the gas input module. The showerhead includes an air inlet part, a chamber, and a shower head. The chamber has an input port and an opposite output port. The chamber is connected to the air inlet part via the input port, and the input port is smaller than the output port. The shower head is connected to the chamber via the output port. The shower head includes a plurality of spray holes. The plurality of gas pipelines are arranged at intervals in a circular manner.

[0008] According to a feasible implementation scheme, a plurality of gas transmission pipelines are arranged in point symmetry around the center of the ring.

[0009] According to a feasible implementation scheme, the plurality of gas pipelines include at least one reaction gas pipeline and at least one inert gas pipeline.

[0010] According to a feasible implementation scheme, there are six gas pipelines, including four reaction gas pipelines and two inert gas pipelines. The line connecting the pipe openings of the two inert gas pipelines passes through the center of the ring, and there are two reaction gas pipelines on both sides of the line.

[0011] According to a feasible implementation scheme, the cavity is conical, including an inclined shoulder wall and a vertical wall, the inclined shoulder wall is connected to the vertical wall, the inclined shoulder wall has an input port, and the vertical wall has an output port.

[0012] The present invention also provides a manufacturing method of atomic layer deposition, which is applicable to the atomic layer deposition device as described above, wherein the atomic layer deposition device also includes a reaction chamber and a carrier, wherein the spray head and the carrier are located in the reaction chamber, and a workpiece is arranged on the carrier, and the manufacturing method includes: evacuating the reaction chamber. Delivering a first inert gas through at least one inert gas pipeline among multiple gas pipelines. Delivering a first precursor through a first reaction gas pipeline among multiple gas pipelines, and the first precursor forms a first atomic layer film on the surface of the workpiece. Delivering a second inert gas through at least one inert gas pipeline. Delivering a second precursor through a second reaction gas pipeline among multiple gas pipelines, and the second precursor forms a second atomic layer film on the surface of the first atomic layer film. Delivering a third inert gas through at least one inert gas pipeline.

[0013] According to a feasible implementation, after delivering the third inert gas, the method further includes: delivering a first precursor through a first reaction gas pipeline, the first precursor forming another first atomic layer film on the surface of the second atomic layer film. Delivering a second inert gas through at least one inert gas pipeline. Delivering a second precursor through a second reaction gas pipeline, the second precursor forming another second atomic layer film on the surface of another first atomic layer film. Delivering a third inert gas through at least one inert gas pipeline.

[0014] According to a feasible implementation, when the first inert gas is delivered through at least one inert gas pipeline, the pressure in the reaction chamber is controlled to be between 0.1 Torr and 30 Torr.

[0015] One beneficial effect of the present invention lies in that the atomic layer deposition apparatus provided by the present invention can improve the gas field uniformity in the cavity, make the aperture diameters of the spray holes consistent, reduce the difficulty of manufacturing the spray head, reduce the design cost, and reduce the cost of thin film production through the technical solutions of "the cavity has an input port and an opposite output port, the cavity is connected to the gas inlet part through the input port, and the input port is smaller than the output port", "a plurality of gas pipelines are arranged at intervals in a circular manner", and "the spray head is connected to the cavity through the output port, and the spray head includes a plurality of spray holes".

[0016] Furthermore, according to some embodiments, the atomic layer deposition apparatus can avoid the problem of spray hole blockage, and thus avoid the phenomena of dust generation and uneven film thickness during thin film deposition.

[0017] According to the embodiments of the manufacturing method of atomic layer deposition of the present invention, there are also such technical effects: improving the gas field uniformity in the cavity, making the aperture diameters of the spray holes consistent, reducing the difficulty of manufacturing the spray head, reducing the production cost of the thin film, and avoiding the problem of spray hole blockage, and thus avoiding the phenomena of dust generation and uneven film thickness during thin film deposition.

[0018] To further understand the features and technical content of the present invention, please refer to the following detailed description and drawings of the present invention. However, the provided drawings are only for reference and illustration, and are not used to limit the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 It is a schematic flow chart of the manufacturing method of atomic layer deposition according to an embodiment of the present invention.

[0020] Figure 2 It is a schematic diagram of an atomic layer deposition apparatus according to an embodiment of the present invention.

[0021] Figure 3 For Figure 2 a cross-sectional schematic view of a gas input module in the illustrated embodiment. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0022] The following are specific embodiments to illustrate the embodiments of the "atomic layer deposition apparatus and manufacturing method of atomic layer deposition" disclosed by the present invention. Those skilled in the art can understand the advantages and effects of the present invention from the content disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of the present invention. Additionally, the drawings of the present invention are only simple schematic illustrations and are not drawn according to actual dimensions, which is stated in advance. The following embodiments will further detail the related technical content of the present invention, but the disclosed content is not used to limit the protection scope of the present invention.

[0023] Please refer to Figures 1 to 3 , Figure 1 , which is a schematic flowchart of a manufacturing method M100 for atomic layer deposition according to an embodiment of the present invention. Figure 2 , which is a schematic diagram of an atomic layer deposition apparatus according to an embodiment of the present invention.

[0024] Figure 3 is Figure 2 a cross-sectional schematic view of the gas input module 10 in the illustrated embodiment, viewed from a top-down perspective.

[0025] The manufacturing method M100 for atomic layer deposition is applicable to an atomic layer deposition apparatus D. The atomic layer deposition apparatus D includes a gas input module 10 and a spraying head 20. The gas input module 10 includes a plurality of gas pipelines 1. The spraying head 20 is connected to the gas input module 10. The spraying head 20 includes an air inlet portion 201, a cavity 202, and a nozzle 203. The cavity 202 has an input port 2021 and an opposite output port 2022. The cavity 202 is connected to the air inlet portion 201 via the input port 2021, and the input port 2021 is smaller than the output port 2022. The nozzle 203 is connected to the cavity 202 via the output port 2022. The nozzle 203 includes a plurality of spray holes 2031. The plurality of gas pipelines 1 are arranged at intervals in a circular manner. The atomic layer deposition apparatus D further includes a reaction chamber 30 and a carrier 40. The spraying head 20 and the carrier 40 are located in the reaction chamber 30. A workpiece 50 is disposed on the carrier 40 (see Figure 2 ), and the reaction chamber 30 is connected to an exhaust motor 60.

[0026] In Figure 2 the illustrated embodiment, each of the plurality of gas pipelines 1 has an inclination angle θ1 with respect to a plane. However, the present invention is not limited thereto. According to some embodiments, the plurality of gas pipelines 1 are located on the same horizontal plane. The plurality of gas pipelines 1 include a reaction gas pipeline (such as gas pipelines 1c-1f) and an inert gas pipeline (such as gas pipeline 1a or gas pipeline 1b). In this embodiment, the plurality of gas pipelines 1 are six, including four reaction gas pipelines 1c-1f and two inert gas pipelines 1a-1b. The connection line L of the nozzles of the two inert gas pipelines 1a-1b passes through the center C of the circle. On both sides of the connection line L, there are two reaction gas pipelines respectively (for example, reaction gas pipelines 1c-1d and reaction gas pipelines 1e-1f). And according to Figure 2 the illustrated embodiment, the plurality of gas pipelines 1 are respectively bent pipes and are arranged in point symmetry around the circular center C. However, the present invention is not limited thereto. For example, the gas pipeline 1 can also be a straight pipe. According to some embodiments, the plurality of gas pipelines 1 are eight, including six reaction gas pipelines and two inert gas pipelines (not shown in the figure).

[0027] According to Figure 2In the illustrated embodiment, the cavity 202 is conical, including an inclined shoulder wall 2023 and a vertical wall 2024 , the inclined shoulder wall 2023 is connected to the vertical wall 2024 , the inclined shoulder wall 2023 has an input port 2021 , and the vertical wall 2024 has an output port 2022 .

[0028] in accordance with Figure 2 and Figure 3 In the embodiment shown, multiple gas pipelines 1 are used to respectively inject precursors (gases) and inert gases (such as nitrogen or argon). The precursors and inert gases will generate cyclones in the space within the chamber 202, thereby making the precursor present a random annular gas flow, eliminating the gas inlet only at a specific position (or concentrated gas inlet), and spraying out through the nozzle 203. The structure of multiple gas pipelines 1 allows each precursor to be independently injected into the chamber 202, and will not react with each other in the same gas pipeline to affect the film manufacturing process.

[0029] The manufacturing method M100 includes step S1: evacuating the reaction chamber 30. Step S2: delivering a first inert gas through at least one inert gas pipeline 1a-1b among the multiple gas pipelines 1. Step S3: delivering a first precursor through a first reaction gas pipeline 1c among the multiple gas pipelines 1, and the first precursor forms a first atomic layer film on the surface of the workpiece 50. Step S4: delivering a second inert gas through at least one inert gas pipeline 1a-1b. Step S5: delivering a second precursor through a second reaction gas pipeline 1f among the multiple gas pipelines 1, and the second precursor forms a second atomic layer film on the surface of the first atomic layer film. Step S6: delivering a third inert gas through at least one inert gas pipeline.

[0030] The first inert gas, the second inert gas and the third inert gas may be the same or different, and the present invention is not limited thereto.

[0031] In step S1, the reaction chamber 30 and the cavity 202 are evacuated. In step S2, an inert gas (such as argon or nitrogen) is introduced through two inert gas pipelines 1a-1b. According to some embodiments, the pressure of the cavity 202 is maintained between 0.1 torr and 30 torr. In step S3, a first precursor is introduced (for example, introduced into the cavity 202 through a first reaction gas pipeline 1c), so that the precursor forms a first atomic layer film on the surface of the processed object 50 (such as a wafer), so that functional groups are generated on the surface of the processed object 50. In step S4: a second inert gas (such as argon or nitrogen) is delivered through two inert gas pipelines 1a-1b to remove excess first precursor in the cavity 202. In step S5, a second precursor is introduced (for example, introduced into the cavity 202 through a second reaction gas pipeline 1f), and the second precursor forms a second atomic layer film on the surface of the first atomic layer film. In step S6 , a third inert gas is delivered through the two inert gas pipelines 1 a - 1 b to remove excess second precursor.

[0032] According to some embodiments, the user can introduce other precursors (such as the first precursor and the second precursor) through other reaction gas pipelines (such as reaction gas pipelines 1d - 1e) to achieve the desired film composition and thickness, and the present invention has no limitation in this regard.

[0033] According to some embodiments, after step S6, the user can repeat steps S3 to S6 until the desired film thickness is reached.

[0034] One beneficial effect of the present invention is that the atomic layer deposition apparatus provided by the present invention can improve the gas field uniformity in the cavity, make the apertures of the spray holes consistent, reduce the difficulty of manufacturing the spray head, reduce the design cost, and reduce the cost of film production through the technical solutions of "the cavity has an input port and an opposite output port, the cavity is connected to the gas inlet part through the input port, and the input port is smaller than the output port", "a plurality of gas pipelines are arranged at intervals in a circular manner", and "the spray head is connected to the cavity through the output port, and the spray head includes a plurality of spray holes".

[0035] Furthermore, according to some embodiments, the atomic layer deposition apparatus can avoid the problem of spray hole blockage, and thus avoid the phenomena of dust generation and uneven film thickness caused by film deposition.

[0036] According to the embodiments of the manufacturing method of atomic layer deposition of the present invention, there are also such technical effects: improving the gas field uniformity in the cavity, making the apertures of the spray holes consistent, reducing the difficulty of manufacturing the spray head, reducing the production cost of the film, and avoiding the problem of spray hole blockage, and thus avoiding the phenomena of dust generation and uneven film thickness caused by film deposition.

[0037] The content disclosed above is only the preferred feasible embodiments of the present invention, and does not limit the protection scope of the claims of the present invention. Therefore, all equivalent technical changes made by using the content of the specification and drawings of the present invention are included in the protection scope of the claims of the present invention.

Claims

1. An atomic layer deposition device, characterized in that, The atomic layer deposition apparatus includes: A gas input module including a plurality of gas pipelines spaced apart in a circular manner; and A spray head connected to the gas input module, the spray head including: An air inlet portion; A cavity having an input port and an opposite output port, the cavity being connected to the air inlet portion via the input port, the input port being smaller than the output port; and A spray head connected to the cavity via the output port, the spray head including a plurality of spray holes.

2. The atomic layer deposition device according to claim 1, characterized in that, At least one reaction gas pipeline and at least one inert gas pipeline are included in the plurality of gas pipelines.

3. The atomic layer deposition device according to claim 2, characterized in that, The plurality of gas pipelines are six gas pipelines, the six gas pipelines including four reaction gas pipelines and two inert gas pipelines, the connection line of the pipe orifices of the two inert gas pipelines passing through the center of the circle, and two reaction gas pipelines being respectively provided on both sides of the connection line.

4. The atomic layer deposition device according to claim 1, characterized in that, The cavity is conical and includes an inclined shoulder wall surface and a vertical wall surface, the inclined shoulder wall surface connecting the vertical wall surface, the inclined shoulder wall surface having the input port, and the vertical wall surface having the output port.

5. The atomic layer deposition device according to claim 1, characterized in that, The plurality of gas pipelines are arranged in point symmetry around the center of the circle.

6. A manufacturing method of atomic layer deposition, characterized in that, The manufacturing method of atomic layer deposition is used for the atomic layer deposition apparatus according to claim 1. The atomic layer deposition apparatus further includes a reaction chamber and a carrier table. The spray head and the carrier table are located in the reaction chamber, and a workpiece is provided on the carrier table. The manufacturing method includes: Vacuumizing the reaction chamber; Delivering a first inert gas through at least one inert gas pipeline among the plurality of gas pipelines; Delivering a first precursor through a first reaction gas pipeline among the plurality of gas pipelines, the first precursor forming a first atomic layer film on the surface of the workpiece; Delivering a second inert gas through the at least one inert gas pipeline; Delivering a second precursor through a second reaction gas pipeline among the plurality of gas pipelines, the second precursor forming a second atomic layer film on the surface of the first atomic layer film; and Delivering a third inert gas through the at least one inert gas pipeline.

7. The manufacturing method of atomic layer deposition according to claim 6, characterized in that, After delivering the third inert gas, it further includes: Delivering the first precursor through the first reaction gas pipeline, the first precursor forming another first atomic layer film on the surface of the second atomic layer film; Delivering the second inert gas through the at least one inert gas pipeline; Delivering the second precursor through the second reaction gas pipeline, the second precursor forming another second atomic layer film on the surface of the another first atomic layer film; and Delivering the third inert gas through the at least one inert gas pipeline.

8. The manufacturing method of atomic layer deposition according to claim 6, characterized in that, When delivering the first inert gas through the at least one inert gas pipeline, the pressure in the reaction chamber is controlled at 0.1 Torr - 30 Torr.

9. The manufacturing method of atomic layer deposition according to claim 6, characterized in that, The plurality of gas pipelines are six gas pipelines, the six gas pipelines including two inert gas pipelines, and the connection line of the pipe orifices of the two inert gas pipelines passes through the center of the circle.

10. The manufacturing method of atomic layer deposition according to claim 6, characterized in that, The cavity is conical and includes an inclined shoulder wall surface and a vertical wall surface. The inclined shoulder wall surface connects the vertical wall surface. The input port is provided on the inclined shoulder wall surface, and the output port is provided on the vertical wall surface.

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