Chemical vapor deposition apparatus and method for enhancing durability of chemical vapor deposition apparatus

Abstract

The present invention relates to a chemical vapor deposition apparatus and a method for enhancing durability of the chemical vapor deposition apparatus, the chemical vapor deposition apparatus comprising: a heater on which a wafer is placed; the lifting pin is arranged on the heater; and a weight block disposed on a lower side of the heater and penetrated by the lifting pin, a gap between the lifting pin and the weight block being formed by a specific multiple of a diameter of the lifting pin to absorb thermal deformation of the lifting pin. According to the present invention, it is possible to prevent the lifting pin from being damaged or tilted by absorbing thermal expansion of the lifting pin, and it is possible to prevent the lifting pin from being damaged by increasing the thickness of the lifting pin portion adjacent to the fixing pin by changing the cross-sectional shape of the fixing pin, and it is possible to prevent the lifting pin from being damaged by linearly contacting the weight and the guide ring. Therefore, the phenomenon that the weight bearing block is placed mistakenly is prevented, and the damage to the wafer is reduced.

Description

Technical Field

[0001] The present invention relates to a chemical vapor deposition apparatus and a method for enhancing the durability of a chemical vapor deposition apparatus. More specifically, the present invention relates to a chemical vapor deposition apparatus and a method for enhancing the durability of a chemical vapor deposition apparatus, which can prevent breakage or tilting of a lift pin by absorbing thermal expansion of the lift pin, can prevent breakage of the lift pin by increasing the thickness of a portion of the lift pin adjacent to the fixing pin by changing the cross-sectional shape of the fixing pin, and can prevent misplacement of a weight block and reduce damage to a wafer by bringing the weight block into contact with a guide loop line. Background Art

[0002] Generally, in the process of manufacturing semiconductor devices, a semiconductor wafer needs to undergo a prescribed deposition process, and this deposition process is performed by a chemical vapor deposition apparatus. Referring to Figure 1 , according to the chemical vapor deposition apparatus of the prior art, there is a heater H in which a wafer W is placed and the temperature of the wafer W is adjusted.

[0003] There is a lift pin 2 in this heater H. The lift pin 2 is provided in such a way as to penetrate the heater H, and as the heater H moves up and down, it is located on the upper surface of the heater H or protrudes upward from the upper surface of the heater H to support the wafer W.

[0004] This lift pin 2 is balanced by a weight block 3. As shown in the figure, this weight block 3 is provided on the lower side of the heater H, and the lift pin 2 is coupled by being inserted into this weight block 3. On the other hand, a guide ring 4 is provided on the lower side of the weight block 3, and the weight block 3 is placed on the guide ring 4.

[0005] However, the prior art has the following problems (refer to Figure 1 ).

[0006] First, in the deposition process, the wafer W and the heater H are placed in a high-temperature environment, and in most cases, the lift pin 2 also thermally expands in the high-temperature environment. However, for the above prior art, the gap between the lift pin 2 and the weight block 3 is narrow and cannot accommodate the thermal expansion of the lift pin 2, resulting in breakage of the lift pin 2 or excessive contact between the lift pin 2 and the heater H, and thus causing a lateral tilting phenomenon of the lift pin 2, which cannot stably support the wafer W, and thus causing damage to the wafer W.

[0007] Second, the lifting pin 2 is fixed by the fixing pin 5, and a crack CR occurs in a portion of the lifting pin 2 adjacent to the fixing pin 5, resulting in breakage of the lifting pin 2. Thus, as described above, damage to the wafer W occurs.

[0008] Third, the load block 3 is placed on the guide ring 4. As the load block 3 moves up and down, the load block 3 is placed in the wrong position, causing the wafer W to lose balance. Thus, damage to the wafer W occurs.

[0009] The prior art is technical information that the inventor has retained or mastered during the derivation of the present invention, and is not necessarily publicly known technology that was made available to the general public before the application of the present invention.

[0010] Prior art documents

[0011] Patent documents

[0012] Patent Document 1: Korean Patent Publication No. 10-2005-0112731 (Publication Date: December 01, 2005)

[0013] Patent Document 2: Korean Patent No. 10-0526923 (Grant Date: November 01, 2005) Summary of the Invention

[0014] Technical Problem

[0015] In view of solving the above problems, an object of the present invention is to provide a chemical vapor deposition apparatus and a method for enhancing the durability thereof, which can prevent breakage or tilting of the lifting pin by absorbing the thermal expansion of the lifting pin, thereby reducing damage to the wafer.

[0016] In addition, an object of the present invention is to provide a chemical vapor deposition apparatus and a method for enhancing the durability thereof, which can increase the thickness of a portion of the lifting pin adjacent to the fixing pin by changing the cross-sectional shape of the fixing pin to prevent breakage of the lifting pin, thereby reducing damage to the wafer.

[0017] In addition, provided are a chemical vapor deposition apparatus and a method for enhancing the durability thereof, which can minimize the influence of friction by bringing the load block and the guide ring line into contact, and can prevent the load block from landing incorrectly by increasing the contact area of the guide ring to reduce damage to the wafer.

[0018] The technical problems to be solved by the present invention are not limited to the problems mentioned above. Those of ordinary skill in the technical field to which the present invention pertains can clearly understand other technical problems to be solved that are not mentioned from the following description.

[0019] Solution to the problem

[0020] The chemical vapor deposition apparatus according to an embodiment of the present invention includes: a heater for placing a wafer; lift pins provided on the heater; weight blocks provided on the lower side of the heater and penetrated by the lift pins, and a gap between the lift pins and the weight blocks is formed at a specific multiple of the diameter of the lift pins to absorb thermal deformation of the lift pins.

[0021] At this time, the gap can be formed to be 0.18 times to 0.28 times the diameter of the lift pins.

[0022] In addition, the chemical vapor deposition apparatus may further include fixing pins that penetrate the lift pins to fix the lift pins to the weight blocks. The cross-sectional shape of the fixing pins may be elliptical and may form a major axis along the height direction of the lift pins.

[0023] In this case, the thickness from one side surface in the minor axis direction of the fixing pins to the outer surface of the lift pins may be 0.8 times to 0.9 times the thickness in the minor axis direction of the fixing pins.

[0024] In addition, the chemical vapor deposition apparatus may further include a guide ring. The guide ring may be provided on the lower side of the weight block and the weight block is placed thereon. The lower side surface of the weight block can protrude with a specific curvature, and the lower side surface of the weight block and the guide ring can be in line contact with each other.

[0025] In addition, the diameter of the central opening portion of the guide ring can be reduced to a specific multiple to increase the contact area in contact with the lower side surface of the weight block.

[0026] The method for enhancing the durability of the chemical vapor deposition apparatus according to an embodiment of the present invention is the method for enhancing the durability of the chemical vapor deposition apparatus of the above-described embodiment. A gap between the lift pins and the weight blocks is formed at a specific multiple of the diameter of the lift pins so as to absorb thermal deformation of the lift pins during the deposition process. The cross-sectional shape of the fixing pins is elliptical and forms a major axis along the height direction of the lift pins to increase the thickness of adjacent lift pins. The lower side surface of the weight block protrudes with a specific curvature, and the lower side surface of the weight block and the guide ring are in line contact with each other. At the same time, the diameter of the central opening portion of the guide ring is reduced to a specific multiple to increase the contact area in contact with the lower side surface of the weight block.

[0027] In this case, the gap is formed to be 0.18 to 0.28 times the diameter of the lifting pin, the thickness from one side surface in the minor axis direction of the fixing pin to the outer side surface of the lifting pin is 0.8 to 0.9 times the thickness of the fixing pin in the minor axis direction, and the diameter of the central opening portion of the guide ring is reduced to a specific multiple to increase the contact area in contact with the lower side surface of the load block.

[0028] Effects of the Invention

[0029] As described above, according to the present invention, there is an effect that the thermal expansion of the lifting pin can be absorbed to prevent breakage or tilting of the lifting pin, thereby reducing damage to the wafer.

[0030] In addition, according to the present invention, there is an effect that the thickness of the portion of the lifting pin adjacent to the fixing pin can be increased by changing the cross-sectional shape of the fixing pin to prevent breakage of the lifting pin, thereby reducing damage to the wafer.

[0031] In addition, there is an effect that the influence of friction can be minimized by bringing the load block and the guide ring into line contact, and the phenomenon of the load block falling by mistake can be prevented by increasing the contact area of the guide ring to reduce damage to the wafer.

[0032] The effects of the present invention are not limited to the effects mentioned above, and other effects not mentioned can be clearly understood by those of ordinary skill in the technical field to which the present invention pertains from the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 It is a schematic diagram and an enlarged view showing the related configuration of a heater and a lifting pin of a chemical vapor deposition apparatus according to the prior art.

[0034] Figure 2 and Figure 3 It is a schematic diagram showing a lifting pin and a fixing pin of a chemical vapor deposition apparatus according to an embodiment of the present invention.

[0035] Figure 4 It is a schematic diagram and a partial enlarged view showing the relationship between a load block and a guide ring of a chemical vapor deposition apparatus according to an embodiment of the present invention.

[0036] (Description of Reference Numerals)

[0037] 20: Lifting pin

[0038] 30: Load block

[0039] 40: Guide ring

[0040] 41: Guide ring body

[0041] 42: Opening portion

[0042] 50: Fixed pin Detailed implementation mode

[0043] In the present invention, for the sake of difference, clarity from the prior art and facilitating the understanding of the technology, the drawings may be exaggeratedly shown. In addition, the following terms are defined in consideration of the functions in the present invention and may vary according to the intentions or conventions of users and operators. Therefore, these terms should be defined based on the technical content throughout this specification. On the other hand, the embodiments are only exemplary matters of the constituent elements proposed in the scope of protection of the present invention, rather than being used to limit the scope of protection of the present invention. The scope of protection of the invention should be interpreted based on the technical idea throughout the specification of the present invention.

[0044] Throughout the specification, when it is stated that a certain component "includes" a certain component, unless there is a particularly contrary record, it means that other components may be further included, rather than excluding other components.

[0045] In addition, when it is stated that a certain component "is connected", "is connected" or "is combined" to another component, it means that not only the cases of "direct connection", "direct connection" or "direct combination" exist, but also the cases of "being connected with other components intervening therebetween", "being connected with other components intervening therebetween" or "being combined with other components intervening therebetween" exist. On the contrary, when it is stated that a certain component "is directly connected", "is directly connected" or "is directly combined" to another component, it should be understood that there are no other components in between.

[0046] In addition, when directional terms such as "front", "rear", "upper", "lower", "left", "right", "one end", "the other end", "both ends" are used, since they are terms used exemplarily with respect to the orientation of the disclosed drawings, they should not be restrictively interpreted. When terms such as "first" and "second" are used, they are terms used to distinguish each component and should not be restrictively interpreted.

[0047] In order to more clearly illustrate the features of the embodiments of the present invention, the detailed descriptions of matters well-known to those of ordinary skill in the art to which the following embodiments pertain are omitted. And in the drawings, the detailed descriptions of parts irrelevant to the description of the embodiments are omitted.

[0048] Hereinafter, with reference to the drawings, the embodiments of the present invention will be described in detail.

[0049] Figure 2 and Figure 3 is a schematic diagram showing the lifting pin and the fixed pin of a chemical vapor deposition apparatus according to an embodiment of the present invention, Figure 4It is a schematic diagram and a partial enlarged view showing the relationship between the weight block and the guide ring of a chemical vapor deposition apparatus according to an embodiment of the present invention.

[0050] Referring to Figures 2 to 4 , a chemical vapor deposition apparatus according to an embodiment of the present invention includes: a heater H for placing a wafer; a lift pin 20 provided on the heater H; and a weight block 30 provided on the lower side of the heater H and penetrated by the lift pin 20, and a gap TOL1 between the lift pin 20 and the weight block 30 is formed as a specific multiple of the diameter of the lift pin 20 to absorb thermal deformation of the lift pin 20 (refer to Figure 2 ).

[0051] According to the prior art, there is a phenomenon that the gap between the lift pin and the weight block is narrow, so the thermal expansion of the lift pin cannot be accommodated. Due to this structural limitation, breakage of the lift pin occurs, and the wafer cannot be stably supported. In addition, in the prior art, there is a phenomenon that the lift pin tilts in one direction due to excessive contact between the thermally expanded lift pin and the heater. Therefore, due to the breakage or tilting of the lift pin, there is a problem that the wafer cannot be stably supported and the wafer is damaged.

[0052] The present invention is proposed to solve the above problems, and the gap TOL1 between the lift pin 20 and the weight block 30 is formed as a specific multiple of the diameter A of the lift pin 20 to absorb thermal deformation of the lift pin 20. According to an embodiment of the present invention, with this configuration, breakage of the lift pin 20 can be prevented. In addition, the contact between the lift pin 20 and the heater H can be reduced, and the tilting phenomenon of the lift pin 20 can also be prevented. Therefore, according to an embodiment of the present invention, the wafer can be stably supported by the lift pin 20 to reduce damage to the wafer.

[0053] On the other hand, a large number of experiments show that the gap TOL1 is preferably formed as 0.18 times to 0.28 times the diameter A of the lift pin 20. It is confirmed that this is because if the gap TOL1 increases or decreases to more than 0.28 times the diameter of the lift pin 20, the gap TOL1 increases excessively, resulting in a wobbling phenomenon of the lift pin 20, and if the gap TOL1 is less than 0.18 times the diameter A of the lift pin 20, the gap TOL1 is too small to absorb the thermal expansion of the lift pin 20.

[0054] On the other hand, the chemical vapor deposition apparatus according to the embodiment of the present invention may include a fixing pin 50, which passes through the lifting pin 20 to fix the lifting pin 20 on the load block 30. As shown in the figure, the fixing pin 50 can pass through the lifting pin 20 and be placed in the groove portion on the lower side of the load block 30. Figure 3 As shown, the cross-sectional shape of the fixing pin 50 is elliptical, and a major axis may be formed along the height direction of the lifting pin 20 .

[0055] Reference Figure 1 In the prior art chemical vapor deposition apparatus, as mentioned above, the cross section of the fixing pin 5 is circular, so there is a possibility of cracks in the adjacent lifting pins 2 (refer to Figure 1 CR), the lifting pin 2 may be damaged.

[0056] In order to solve the above-mentioned problem, the present invention proposes that the cross-sectional shape of the fixing pin 50 is elliptical, the major axis is formed along the height direction of the lifting pin 20, and the thickness B of the major axis in the minor axis direction is relatively reduced, thereby generating a side surface of the fixing pin 50 (for example, Figure 3 The distance C from the right side surface of the lifting pin 20 to the outer side surface of the lifting pin 20 is relatively increased. That is, the thickness of the adjacent lifting pins 20 is increased, so the generation of cracks can be suppressed, thereby preventing the lifting pins 20 from being damaged.

[0057] A large number of experiments have shown that the thickness C from the side surface of the fixing pin 50 in the short axis direction to the outer side surface of the lifting pin 20 is preferably 0.8 to 0.9 times the thickness B of the fixing pin 50 in the short axis direction. This is because if the thickness C of the lifting pin 20 is less than 0.8 times the thickness B of the fixing pin 50 in the short axis direction, the thickness becomes thinner and the effect of preventing cracks is minimal. If the thickness C of the lifting pin 20 is more than 0.9 times the thickness B of the fixing pin 50 in the short axis direction, the strength of the fixing pin 50 is reduced, and the stability of the lifting pin 20 is reduced.

[0058] On the other hand, the weight block 30 is placed on the guide ring 40. At this time, preferably, the lower side of the weight block 30 protrudes with a specific curvature, so that the lower side of the weight block 30 and the guide ring 40 are in line contact with each other.

[0059] As the heater is raised and lowered, the weight block 30 is also raised and lowered, and thus often contacts the guide ring 40. In the prior art, the weight block is not placed at the predetermined position of the guide ring due to the friction between the weight block and the guide ring, but is placed at a wrong position. Due to this phenomenon, the wafer loses balance, thereby causing the problem of wafer damage.

[0060] In order to solve these problems, the present invention makes the lower side surface of the weight block 30 protrude with a specific curvature, so that the lower side surface of the weight block 30 and the guide ring 40 are in line contact with each other. According to the present invention, the frictional force between the weight block 30 and the guide ring 40 is reduced, so that the weight block 30 can be placed on the guide ring 40, and thus, the balance of the wafer can be maintained.

[0061] In addition, for the present invention, the diameter of the central opening 42 of the guide ring 40 is reduced to a specific multiple, so that the contact area in contact with the lower side surface of the weight block 30 can be increased. Thereby, the area of the guide ring 40 on which the weight block 30 is placed is increased, and stable contact of the weight block 30 can be achieved. At this time, a large number of experiments show that, preferably, the diameter of the central opening 42 is reduced by 10%. This is because if the reduction ratio of the diameter of the central opening 42 exceeds 10%, there is almost no effect of improving the stable contact efficiency of the weight block 30, so the cost is high compared with the effect. If the reduction ratio of the diameter is less than 10%, stable contact of the weight block 30 cannot be achieved.

[0062] Refer again to Figures 2 to 4 , and learn about the method for enhancing the durability of the chemical vapor deposition apparatus of the present invention.

[0063] First of all, as described above, the gap TOL1 between the lifting pin 20 and the weight block 30 is formed as a specific multiple of the diameter of the lifting pin 20, so that the thermal deformation of the lifting pin 20 can be absorbed during the deposition process to prevent the lifting pin 20 from being damaged.

[0064] In addition, by reducing the contact between the lifting pin 20 and the heater, the tilting phenomenon of the lifting pin 20 can be prevented. At this time, as described above, the gap TOL1 is preferably formed as 0.18 times to 0.28 times the diameter of the lifting pin 20.

[0065] On the other hand, the cross-sectional shape of the fixing pin 50 is oval, and the major axis is formed along the height direction of the lifting pin 20, so that the thickness of the adjacent lifting pins 20 is increased, which can prevent the lifting pin 20 from being damaged and improve the durability. At this time, as described above, the thickness C from the side surface on the minor axis direction of the fixing pin 50 to the outer side surface of the lifting pin 20 is preferably 0.8 times to 0.9 times the thickness B in the minor axis direction of the fixing pin 50.

[0066] In addition, the lower side surface of the weight block 30 protrudes with a specific curvature, such that the lower side surface of the weight block 30 and the guide ring 40 are in line contact with each other. At the same time, the diameter of the central opening portion 42 of the guide ring 40 is reduced to a specific multiple (preferably 10%), so as to increase the contact area in contact with the lower side surface of the weight block 30, thereby enabling stable placement of the weight block 30 and enhancing durability.

[0067] As described above, according to the present invention, it is possible to prevent breakage or inclination of the lifting pin by absorbing the thermal expansion of the lifting pin, thereby reducing the possibility of damage to the wafer.

[0068] In addition, according to the present invention, by changing the cross-sectional shape of the fixing pin to increase the thickness of the portion of the lifting pin adjacent to the fixing pin, breakage of the lifting pin can be prevented, thereby reducing the possibility of damage to the wafer.

[0069] In addition, by bringing the weight block and the guide ring into line contact, the influence of friction is minimized, and by increasing the contact area of the guide ring, the phenomenon of the weight block falling accidentally can be prevented, thereby reducing the possibility of damage to the wafer.

[0070] As described above, the present invention has been described with reference to the embodiments shown in the drawings, but this is only exemplary. It should be understood that within the technical field to which the present technology belongs, various modifications and equivalent other embodiments can be made based on general knowledge. Therefore, the true technical protection scope of the present invention should be based on the scope of the appended claims of the invention and determined based on the specific content of the above-mentioned invention.

[0071] Industrial Applicability

[0072] The present invention relates to a manufacturing method and can be used in industrial fields related to semiconductors.

Claims

1. A chemical vapor deposition apparatus, wherein: include: Heater, where the wafer is placed; A lifting pin, disposed on the heater; as well as A load block is disposed on the lower side of the heater and is penetrated by the lifting pin. A gap between the lift pin and the load block is formed at a specific multiple of a diameter of the lift pin to absorb thermal deformation of the lift pin.

2. The chemical vapor deposition apparatus according to claim 1, wherein: The gap is formed to be 0.18 to 0.28 times the diameter of the lift pin.

3. The chemical vapor deposition apparatus according to claim 1, wherein: It also includes a fixing pin that penetrates the lifting pin to fix the lifting pin on the load block, The cross-sectional shape of the fixing pin is elliptical, and a major axis is formed along the height direction of the lifting pin.

4. The chemical vapor deposition apparatus according to claim 2, wherein: The thickness from one side surface of the fixing pin in the short-axis direction to the outer side surface of the lifting pin is 0.8 to 0.9 times the thickness of the fixing pin in the short-axis direction.

5. The chemical vapor deposition apparatus according to claim 1, wherein: It also includes a guide ring, which is arranged on the lower side of the weight block and has the weight block placed thereon. The lower side surface of the load block protrudes with a specific curvature, and the lower side surface of the load block and the guide ring are in line contact with each other.

6. The chemical vapor deposition apparatus according to claim 5, wherein: The diameter of the central opening portion of the guide ring is reduced to a specific multiple to increase the contact area with the lower side of the load block.

7. A method for enhancing the durability of a chemical vapor deposition device according to any one of claims 1 to 6, wherein: The gap between the lift pin and the load block is formed at a specific multiple of the diameter of the lift pin so as to absorb the thermal deformation of the lift pin during the deposition process. The cross-sectional shape of the fixing pin is elliptical, and a long axis is formed along the height direction of the lifting pin to increase the thickness of the adjacent lifting pins. The lower side surface of the weight block protrudes with a specific curvature, and the lower side surface of the weight block and the guide ring are in linear contact with each other. At the same time, the diameter of the central opening part of the guide ring is reduced to a specific multiple to increase the contact area with the lower side surface of the weight block.

8. The method for enhancing the durability of a chemical vapor deposition device according to claim 7, wherein: The gap is formed to be 0.18 to 0.28 times the diameter of the lift pin, The thickness from one side of the fixing pin in the short axis direction to the outer side of the lifting pin is 0.8 to 0.9 times the thickness of the fixing pin in the short axis direction. The diameter of the central opening portion of the guide ring is reduced to a specific multiple to increase the contact area with the lower side of the load block.

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