Electrode device and deposition equipment

Abstract

The invention discloses an electrode device, which is suitable for being used in a reaction cavity of deposition equipment and comprises an annular conductor and a radio frequency input body. The annular electric conductor is provided with an upper surface and a lower surface which are opposite to each other, the annular electric conductor is provided with a plurality of pins, each pin is provided with a radio frequency entering point, and the distances between every two adjacent pins are the same. The radio frequency input body is provided with a radio frequency input point, and the radio frequency input body is located on the upper surface of the annular conductor and electrically connected with the annular conductor. The invention further discloses deposition equipment with the electrode device.

Description

Technical Field

[0001] The present invention relates to an electrode device, and in particular to an electrode device having a plurality of feeding points, and a deposition apparatus having the electrode device. Background Art

[0002] Atomic Layer Deposition (ALD) is a thin film manufacturing process technology that can grow materials in a layer-by-layer stacking manner. It has the characteristics of self-limiting growth and precise controllability of the growth thickness of the thin film, and is increasingly valued by the industrial community, especially the semiconductor industry.

[0003] Current atomic layer deposition apparatuses generally use parallel plate capacitive electrodes. The radio frequency power supply device transmits energy to the matcher via a wire, and the matcher is electrically connected to the electrode module. Conventionally, the electrode feeding points are set at the center of the electrode module, and the radio frequency energy enters the cavity through a gas shower head to dissociate the reaction gas to generate plasma. However, in the single-point feeding manner of the radio frequency electrode, this method is prone to cause uneven electromagnetic fields, which in turn leads to uneven growth of the thin film, resulting in poor efficiency and quality of the thin film manufacturing process.

[0004] Therefore, how to improve the engineering effect of atomic layer thin film deposition through the improvement of the structural design of the electrode module to overcome the above-mentioned defects has become one of the important issues to be solved in this field. Summary of the Invention

[0005] The technical problem to be solved by the present invention is to provide an electrode device having a plurality of feeding points in view of the deficiencies of the prior art. By inputting radio frequency power through the multi-electrode feeding point method, the plasma power is effectively and evenly distributed, so that the electromagnetic field intensity is more uniform, thereby improving the electromagnetic field uniformity in the reaction cavity, making the plasma dissociation state uniform, and improving the uniformity of the produced thin film.

[0006] To solve the above technical problems, one of the technical solutions adopted by the present invention is to provide an electrode device for use with a deposition apparatus. The deposition apparatus has a reaction cavity, and the electrode device is located in the reaction cavity. The electrode device includes: an annular conductor and a radio frequency input body. The annular conductor has an upper surface and a lower surface opposite to each other. The annular conductor has a plurality of pins located on the lower surface, and each pin is provided with a radio frequency entry point, and the distance between two adjacent ones of the plurality of pins is the same. The radio frequency input body has a radio frequency input point, and the radio frequency input body is located on the upper surface of the annular conductor and is electrically connected to the annular conductor.

[0007] According to a feasible implementation, each pin includes a body portion, a regulating portion, and a pin, the radio frequency entry point is located on the pin, and the regulating portion is connected to the pin and can move the pin in the horizontal direction.

[0008] According to a feasible implementation, the positions of each pin in the vertical direction are the same.

[0009] According to a feasible implementation, the electrode device further includes: an electrode module, located under the lower surface of the annular conductor and electrically connected to the annular conductor.

[0010] According to a feasible implementation, the electrode device further includes: a matcher, located at the RF input point.

[0011] According to a feasible implementation, the electrode device further includes: a support portion, whose shape corresponds to that of the annular conductor. The support portion is located between the annular conductor and the electrode module and is insulated from the annular conductor and the electrode module.

[0012] According to a feasible implementation, the electrode device further includes: a plate body, located between the support portion and the annular conductor and insulated from the annular conductor.

[0013] The present invention also provides a deposition device, which includes a reaction chamber and the aforementioned electrode device. The electrode device is located inside the reaction chamber.

[0014] One of the beneficial effects of the present invention is that the electrode device and the deposition device provided by the present invention can achieve technical effects such as evenly distributing RF power, improving the uniformity of the electromagnetic field, making the plasma dissociation more uniform, and increasing the film uniformity through the technical solution of "each of the pins is provided with an RF entry point, and the distances between adjacent ones of the multiple pins are the same".

[0015] Furthermore, the present invention controls the plasma distribution and improves the film uniformity through the technical solution of "each of the pins includes a body portion, a regulation portion, and a pin foot, the RF entry point is located at the pin foot, the regulation portion is connected to the pin foot, and can move the pin foot in the horizontal direction".

[0016] Furthermore, the present invention makes the transmission path lengths between the feeding points the same through the technical solution of "the positions of each of the pins in a vertical direction are the same", so as to evenly distribute the electric field intensity.

[0017] To further understand the features and technical content of the present invention, please refer to the following detailed description and drawings of the present invention. However, the provided drawings are only for reference and illustration and are not used to limit the present invention. Description of the Drawings

[0018] Figure 1 It is a schematic external view of the electrode device according to an embodiment of the present invention.

[0019] Figure 2 For Figure 1Top view of the illustrated embodiment.

[0020] Figure 3 Schematic external view of an electrode device according to an embodiment of the present invention.

[0021] Figure 4 is Figure 3 Top view of the illustrated embodiment.

[0022] Figure 5 Schematic structural view of a deposition device according to an embodiment of the present invention. Detailed implementation manners

[0023] The following are specific embodiments to illustrate the implementation manners of the present invention regarding "electrode device and deposition device". Those skilled in the art can understand the advantages and effects of the present invention from the content disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of the present invention. Additionally, the drawings of the present invention are only for simple schematic illustration and are not drawn according to actual dimensions, hereby stating in advance. The following implementation manners will further detail the related technical content of the present invention, but the disclosed content is not used to limit the protection scope of the present invention.

[0024] In addition, the term "or" used herein may, depending on the actual situation, include any one or a combination of more of the related listed items.

[0025] Please refer to Figures 1 to 2 , Figure 1 Schematic external view of an electrode device 100A according to an embodiment of the present invention. Figure 2 is Figure 1 Top view of the illustrated embodiment. In this embodiment, the electrode device 1 is located in the cavity within the deposition device Z. The electrode device 1 further includes an electrode module 3 (in this embodiment, the electrode module 3 has a spray head 31), a matcher 4, a support portion 5, and a plate body 6. The electrode module 3 is located under the lower surface 1B of the annular conductor 1 and is electrically connected to the annular conductor 1. The matcher 4 is located at the RF input point RF2. The shape of the support portion 5 corresponds to that of the annular conductor 1. The support portion 5 is located between the annular conductor 1 and the electrode module 3 and is insulated from both the annular conductor 1 and the electrode module 3. The plate body 6 is located between the support portion 5 and the annular conductor 1 and is insulated from the annular conductor 1.

[0026] Please refer to Figures 3 to 4 , Figure 3 Schematic external view of an electrode device 100B according to an embodiment of the present invention. Figure 4 is Figure 3Top view of the illustrated embodiment. The electrode device 1 is applicable to the reaction cavity of a deposition device. The electrode device 1 includes an annular conductor 1 and a radio frequency input body 2. The annular conductor 1 has opposite upper surface 1A and lower surface 1B. The annular conductor 1 has a plurality of pins 11 located on the lower surface 1B. Each pin 11 is provided with a radio frequency entry point RF1. The distance between any two adjacent ones of the plurality of pins 11 is the same. The radio frequency input body 2 has a radio frequency input point RF2. The radio frequency input body 2 is located on the upper surface 1A of the annular conductor 1 and is electrically connected to the annular conductor 1.

[0027] In this embodiment, the shape of the annular conductor 1 is a perfect circle and has a center P. The number of radio frequency entry points RF1 is 4. According to some embodiments, the number of the radio frequency entry points RF1 can be 8. The present invention is not limited thereto and is set according to user requirements. In this embodiment, each pin 11 includes a body portion 111, a regulating portion 112 and a pin 113. The radio frequency entry point RF1 is located on the pin 113. The regulating portion 112 is connected to the pin 113 and can move the pin 113 in the horizontal direction D1. Thus, the distance between the radio frequency entry point RF1 and the center P of the annular conductor 1 can be controlled, so that the radio frequency entry point is far from or close to the center P of the annular conductor 1 to regulate the electric field intensity, and further control the plasma dissociation rate and the thickness of the grown thin film.

[0028] In this embodiment, the height of each pin 11 in the vertical direction D2 is the same. Thus, due to the same distance from the matcher 4 to the radio frequency entry point RF1, the plasma power can be effectively and evenly distributed, the electromagnetic field intensity can be made more uniform, thereby improving the electromagnetic field uniformity, making the plasma dissociation state uniform, and further making the growth of the thin film uniform.

[0029] Please refer back to Figures 1 to 4 and also refer to Figure 5 Figure 5 is a schematic structural diagram of a deposition device Z according to an embodiment of the present invention. The deposition device Z includes a reaction cavity 20 and an electrode device 100. The electrode device 100 is located in the reaction cavity 20. For the electrode device 100, please refer to the above description.

[0030] [Advantages of the embodiment]

[0031] One of the advantages of the present invention is that the electrode device and the deposition device provided by the present invention can achieve technical effects such as evenly distributing radio frequency power, improving electromagnetic field uniformity, making plasma dissociation more uniform, and increasing thin film uniformity through the technical solution of "each of the pins is provided with a radio frequency entry point, and the distance between any two adjacent ones of the plurality of pins is the same".

[0032] ​Furthermore, the present invention controls the plasma distribution and improves the film uniformity through the technical solution that "each of the pins includes a body portion, a regulation portion, and a pin, the radio frequency entry point is located at the pin, the regulation portion is connected to the pin, and the pin can be moved in the horizontal direction".

[0033] Furthermore, the present invention makes the transmission path lengths between the feeding points the same through the technical solution that "the positions of each of the pins in the vertical direction are the same", so as to make the distribution of the electric field intensity uniform.

[0034] The content disclosed above is only the preferred feasible embodiment of the present invention, and does not limit the protection scope of the claims of the present invention. Therefore, all equivalent technical changes made by using the content of the specification and drawings of the present invention are included in the protection scope of the claims of the present invention.

Claims

1. An electrode device, used in conjunction with a deposition apparatus having a reaction chamber, characterized in that, The electrode device includes: An annular conductor having an upper surface and an opposite lower surface, the annular conductor having a plurality of pins located on the lower surface, each of the pins having a radio frequency entry point provided thereon, wherein the distance between two adjacent ones of the plurality of pins is the same; and A radio frequency input body having a radio frequency input point, the radio frequency input body being located on the upper surface of the annular conductor and electrically connected to the annular conductor.

2. The electrode device according to claim 1, characterized in that, Each of the pins includes a body portion, a regulating portion, and a lead, the radio frequency entry point being located on the lead, the regulating portion being connected to the lead and capable of moving the lead in a horizontal direction.

3. The electrode device according to claim 1, characterized in that, Each of the pins is in the same position in the vertical direction.

4. The electrode device according to claim 1, characterized in that, The electrode device further includes: A matcher located at the radio frequency input point.

5. The electrode device according to claim 1, characterized in that, The electrode device further includes: An electrode module located under the lower surface of the annular conductor and electrically connected to the annular conductor.

6. The electrode device according to claim 5, characterized in that, The electrode device further includes: A support portion having a shape corresponding to the annular conductor, the support portion being located between the annular conductor and the electrode module and insulated from the annular conductor and the electrode module.

7. The electrode device according to claim 6, characterized in that, The electrode device further includes: A plate body located between the support portion and the annular conductor and insulated from the annular conductor.

8. A deposition apparatus, characterized in that, The deposition device includes: A reaction chamber; and The electrode device according to any one of claims 1 to 7, located within the reaction chamber.

Images