Manufacturing method and manufacturing equipment of compound semiconductor

Abstract

The invention provides a manufacturing method and manufacturing equipment of a compound semiconductor. A gas injection device of the manufacturing equipment is provided with a plurality of process gas inlet channels and at least one compensation gas inlet channel. In the growth process of the semiconductor material layer, growth rates of different areas of the semiconductor material layer are obtained through a detection device, and whether compensation gas is introduced through at least one compensation gas inlet channel or not is judged according to the growth rates so as to synchronously carry out gas compensation treatment; the first source gas and / or the second source gas required by the growth of the semiconductor material layer are / is supplemented, so that the corresponding source gas can be instantly supplemented according to the non-uniformity of the semiconductor material layer in the growth process, and the growth non-uniformity of the material layer is weakened until eliminated; the quality and the thickness of semiconductor material layers in the same substrate, between substrates and between different circumferences in the radial direction of the substrate are uniform, and the consistency and the yield of semiconductor materials are improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor material preparation and processing, and particularly to a manufacturing method and manufacturing equipment for compound semiconductors. Background Art

[0002] Semiconductor devices with high temperature, high frequency, radiation resistance, and high power have important application prospects in fields such as communication, solar energy, semiconductor lighting, and smart grid. The manufacturing processes of such semiconductor devices, such as manufacturing processes on heterogeneous substrates such as sapphire, silicon carbide, and silicon, introduce reactants by gas to establish a flow field in the reaction chamber, and the reactants grow a specific semiconductor material layer on the substrate surface. As Figure 1 shown, it is necessary to first grow a compound semiconductor epitaxial layer 18 on the substrate 300. For example, a growth buffer layer 12 is grown to construct an interface with few defects and low stress, and then an active region carrier 13, an electron injection layer 14, an active region 15, a hole injection layer 16, an ohmic contact layer 17, etc. containing such compound semiconductors are grown on the buffer layer. The growth process of each layer has an important impact on the quality of the finished semiconductor device. Taking the buffer layer process as an example, it is hoped to control the process to reduce the lattice mismatch and stress between the substrate and the buffer layer to facilitate the good growth quality of subsequent layers.

[0003] The thickness uniformity of the semiconductor material layer will also directly affect the performance of the semiconductor device. During the actual material growth process, due to changes in the delivery rate, viscosity coefficient, pre-reaction, etc. of each source material, the material thickness on the substrate at the circumferential direction of different radial directions of the carrier device will be inconsistent when growing the semiconductor material layer. Seriously, obvious problems will occur in the material layer uniformity within the same substrate, so that cumbersome process adjustments including gas flow adjustment need to be made for the process, which is not conducive to improving production efficiency. Summary of the Invention

[0004] The present invention provides a manufacturing method for compound semiconductors, which is conducive to improving the uniformity of the semiconductor material layer.

[0005] To achieve the above object, an embodiment of the present invention provides a manufacturing method for compound semiconductors, which includes the following steps: Provide the manufacturing equipment for the compound semiconductors. The manufacturing equipment for the compound semiconductors is provided with a detection device, and a substrate is placed therein. The gas injection device includes each intake channel composed of a plurality of process intake channels and at least one compensation intake channel. Each of the compensation intake channels is provided in the area where the plurality of process intake channels are located. Among at least one of the compensation intake channels, one of the compensation intake channels is located at the center of the gas injection device; Place the substrate into the manufacturing equipment; Control the reaction temperature and reaction pressure inside the manufacturing equipment, control the rotation of the substrate, and supply a first source gas containing group III elements with a flow rate of M O and a second source gas containing group V elements with a flow rate of M H to perform a growth process of a semiconductor material layer on the substrate; During the growth process, use the detection device to obtain the growth rates of different regions of the semiconductor material layer in the radial direction of the substrate; During the growth process, determine whether to introduce a compensation gas through at least one of the compensation gas inlet channels to perform gas compensation processing synchronously according to the growth rates, and the compensation gas is the first source gas or the second source gas.

[0006] The beneficial effects of the method for manufacturing a compound semiconductor of the present invention are as follows: The gas injection device is provided with each gas inlet channel composed of a plurality of process gas inlet channels and at least one compensation gas inlet channel. During the growth process of the semiconductor material layer, the growth rates of different regions of the semiconductor material layer are obtained through the detection device, and it is determined whether to introduce a compensation gas through at least one compensation gas inlet channel to perform gas compensation processing synchronously, and the first source gas or the second source gas required for the growth of the semiconductor material layer is supplemented. Thus, the corresponding source gas can be instantaneously supplemented for the non-uniformity of the semiconductor material layer that appears during the growth process, weakening and even eliminating the non-uniform growth of the material layer, and realizing the uniformity of the quality and thickness of the semiconductor material layer within the same substrate, between substrates, and between different circumferences in the radial direction of the substrate, improving the consistency and yield of the semiconductor material.

[0007] In addition, by providing a compensation gas inlet channel in the gas injection device, the manufacturing equipment with this gas injection device can be applicable to the growth of different material systems, solving the problem of poor uniformity caused by switching different source gases during the growth process of different material systems, and solving the problem of deteriorated growth uniformity of multi-component compound materials due to different migration efficiencies and pre-reaction performances of different source materials, improving the growth compatibility of the material growth system.

[0008] The opening and closing of each compensation gas inlet channel, the type and the flow rate of the introduced source material gas can be manually set or can be controlled in real time by a compensation control device according to the growth parameters of the material layer fed back by the detection device. Adjust the growth parameters in real time according to the real-time material growth parameters, reducing or eliminating the probability of abnormalities occurring during the material growth process.

[0009] Optionally, the number of the compensation intake channels is N. When N is 1, the compensation intake channel is located at the center of the gas injection device. When N is a natural number greater than 1, each of the compensation intake channels is arranged radially along the gas injection device starting from the center of the gas injection device.

[0010] Optionally, N is a natural number greater than 1. During the growth process, the step of using the detection device to obtain the growth rates of the semiconductor material layer in different regions in the radial direction of the substrate includes: Using the detection device to obtain the material growth rate V of the substrate region corresponding to the (M - 1)-th compensation intake channel on the semiconductor material layer M-1 , and obtaining the material growth rate V of the substrate region corresponding to the M-th compensation intake channel adjacent to the (M - 1)-th compensation intake channel M , where M is a positive integer greater than or equal to 2 and less than or equal to N. The substrate region corresponding to the (M - 1)-th compensation intake channel is closer to the center of the substrate than the substrate region corresponding to the M-th compensation intake channel, and M is a positive integer greater than or equal to 2 and less than or equal to N; Determine the type and flow rate of the compensation gas introduced from the (M - 1)-th compensation intake channel according to the magnitude relationship between V M-1 and V M .

[0011] Optionally, the step of determining the type and flow rate of the compensation gas introduced from the (M - 1)-th compensation intake channel according to the magnitude relationship between V M-1 and V M includes: Judge V M-1 >V M After that, introduce the second source gas from the (M - 1)-th compensation intake channel and control the flow rate to be M M-1 =γ(1 - (V M / V M-1 ))M H ; Where γ is a compensation coefficient, and γ = 0.8 to 1.2.

[0012] Optionally, the step of determining the type and flow rate of the compensation gas introduced from the (M - 1)-th compensation intake channel according to the magnitude relationship between V M-1 and V M includes: Judge V M-1 <V M After that, introduce the first source gas from the (M - 1)-th compensation intake channel and control the flow rate to be M M-1 =α((V M / V M-1)-1)M O ; Wherein, α is a compensation coefficient, and α = 0.8 to 1.2.

[0013] Optionally, when N is a natural number greater than 1, the step of determining whether to introduce compensation gas through at least one of the compensation intake channels for synchronous gas compensation treatment according to each of the growth rates includes: Introduce the compensation gas from each compensation intake channel, and control that in two adjacent compensation intake channels, the flow rate of the compensation gas provided by the compensation intake channel closer to the middle of the gas injection device is greater than or equal to the flow rate of the compensation gas provided by the other compensation intake channel.

[0014] Optionally, control the ratio between the flow rate of the first source gas introduced through each process intake channel and the flow rate of the first source gas introduced through each compensation intake channel, and control the ratio between the flow rate of the second source gas introduced through each process intake channel and the flow rate of the second source gas introduced through each compensation intake channel to be 5:1 to 50:1.

[0015] Optionally, the flow rate of the first source gas or the second source gas introduced through each compensation intake channel is 1 to 70 ml / min.

[0016] Optionally, control the flow rate M of the second source gas H and the flow rate M of the first source gas O of the ratio M H :M O is 30:1 to 5000:1, the reaction temperature is 700 to 1200 degrees Celsius, and the reaction pressure is 50 to 100 mbar.

[0017] Optionally, in the growth process, control the flow rate M of the first source gas O to be 50 to 500 ml / min.

[0018] Optionally, the second source gas includes hydrogen and a source gas containing a group V hydride. In the growth process, the flow rate of the source gas containing a group V hydride provided through each process intake channel is 0.5 to 50 L / min, and the flow rate of hydrogen is 10 to 200 L / min.

[0019] Optionally, in the growth process, control the substrate to rotate around the axis of the carrier device carrying the substrate at a rate of 10 to 1200 rpm.

[0020] Optionally, the first source gas contains a gallium source or an aluminum source, and the second source gas contains a nitrogen source or an arsenic source.

[0021] Another embodiment of the present invention provides a manufacturing apparatus for compound semiconductors, comprising: A gas injection device and a carrier device, the gas injection device being disposed opposite to the carrier device to supply process gas for growing a semiconductor material layer to a substrate carried on the carrier device; the gas injection device includes respective intake channels composed of a plurality of process intake channels and at least one compensation intake channel, each of the compensation intake channels being disposed in the region where the plurality of process intake channels are located, and in at least one of the compensation intake channels, one of the compensation intake channels is located at the center of the gas injection device; A detection device for obtaining respective growth rates of the semiconductor material layer in different regions in the radial direction of the substrate.

[0022] Optionally, at least three of the compensation intake channels are arranged in the same radial direction of the gas injection device, and there is the same spacing distance between adjacent compensation intake channels.

[0023] Optionally, at least two of the compensation intake channels are arranged in the same radial direction of the gas injection device, the distance between adjacent compensation intake channels is L1, the diameter of the carrier device is D, and the distance between the bottom surface of the gas injection device and the top surface of the substrate is H. The ratio of D to L1 is 1.5:1 to 16:1, and the ratio of D to H is 1.875:1 to 160:1.

[0024] Optionally, L1 is 50 to 100 millimeters and H is 5 to 80 millimeters.

[0025] Optionally, the number of the compensation intake channels is N. When N is 1, the compensation intake channel is located at the center of the gas injection device. When N is a natural number greater than 1, each of the compensation intake channels is arranged radially along the gas injection device starting from the center of the gas injection device.

[0026] Optionally, N is a positive integer greater than or equal to 2 and less than or equal to 4. Description of the Drawings

[0027] Figure 1 Shown is a schematic structural diagram of a semiconductor device.

[0028] Figure 2 Shown is a schematic distribution structure diagram of process intake channels and compensation intake channels in a gas injection device in the manufacturing apparatus for compound semiconductors provided by the present invention.

[0029] Figure 3 Shown as Figure 2 A schematic distribution diagram of the process intake channels of the gas injection device shown.

[0030] Figure 4Shown is a schematic diagram of the distribution of the process intake channels of the gas injection device in an alternative embodiment.

[0031] Figure 5 Shown is a schematic diagram of the distribution of the process intake channels and the compensation intake channels of the gas injection device in an alternative embodiment.

[0032] Figure 6 Shown is a schematic diagram of the distribution of the compensation intake channels of the gas injection device in some embodiments Figure 1 。

[0033] Figure 7 Shown is a schematic diagram of the distribution of the compensation intake channels of the gas injection device in some embodiments Figure 2 。

[0034] Figure 8 Shown is a schematic diagram of the distribution of the compensation intake channels of the gas injection device in some embodiments Figure 3 。

[0035] Figure 9 Shown is a schematic diagram of the structure of the manufacturing equipment provided by the present invention.

[0036] Figure 10 Shown as Figure 9 a schematic diagram of the structure of the carrier device of the manufacturing equipment shown.

[0037] Figure 11 Shown is a schematic diagram of the structure of the gas injection device and the compensation gas supply channel in some embodiments Figure 1 。

[0038] Figure 12 Shown is a schematic diagram of the structure of the gas injection device and the compensation gas supply channel in some embodiments Figure 2 。

[0039] Figure 13 Shown is a schematic diagram of the structure of the gas injection device and the compensation gas supply channel in some embodiments Figure 3 。

[0040] Figure 14 Shown is a schematic diagram of the functional modules in the manufacturing equipment.

[0041] List of element numbers: 10. Manufacturing equipment; 12. Buffer layer; 13. Active region carrier; 14. Electron injection layer; 15. Active region; 16. Hole injection layer; 17. Ohmic contact layer; 18. Epitaxial layer, 100. Gas injection device; 101. First gas chamber; 102. Second gas chamber; 104. Cavity; 110. Body part; 111. Top; 112. Bottom; 120. Process gas inlet channel; 121. First process gas inlet channel; 122. Second process gas inlet channel; 130. Compensation gas inlet channel; 131. First compensation gas inlet channel; 132. Second compensation gas inlet channel; 1321. First second compensation gas inlet channel; 1322. Second second compensation gas inlet channel; 133. Third compensation gas inlet channel; 13N. Nth compensation gas inlet channel; 200. Carrying device; 201. Wafer area; 300. Substrate; 400. Rotating device; 500. Process gas supply channel; 501. First process gas supply channel; 502. Second process gas supply channel; 600. Compensation gas supply channel; 6000. Main pipeline; 601. First compensation gas supply channel; 602. Second compensation gas supply channel; 603. Third compensation gas supply channel; 600-1. First compensation branch pipeline; 600-2. Second compensation branch pipeline; 6001. First gas outlet branch pipeline; 6002. Second gas outlet branch pipeline; 6003. Third gas outlet branch pipeline. Detailed implementation manners

[0042] The following uses specific specific examples to illustrate the implementation manners of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation manners. Various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0043] The present invention provides a method and manufacturing equipment for a compound semiconductor. Among them, the method for manufacturing a compound semiconductor includes the following steps: Provide the manufacturing equipment for the compound semiconductor. The manufacturing equipment for the compound semiconductor is provided with a detection device, including a gas injection device. The gas injection device includes a plurality of process gas inlet channels and at least one compensation gas inlet channel. Each of the compensation gas inlet channels is arranged in the area where the plurality of process gas inlet channels are located. Among at least one of the compensation gas inlet channels, one of the compensation gas inlet channels is located at the center of the gas injection device; Place the substrate into the manufacturing equipment; After controlling the reaction temperature and reaction pressure in the manufacturing equipment, control the rotation of the substrate, and introduce a first source gas containing group III elements with a flow rate of M O through each of the process gas inlet channels into the manufacturing equipment, and a flow rate of M HA second source gas containing group V elements for performing a growth process of a semiconductor material layer on the substrate; During the growth process, the detection device is used to obtain the growth rates of different regions of the semiconductor material layer in the radial direction of the substrate; During the growth process, it is determined whether to introduce a compensation gas through at least one of the compensation gas inlet channels to perform gas compensation processing synchronously according to the respective growth rates, and the compensation gas is the first source gas or the second source gas.

[0044] In an alternative embodiment, the number of the compensation gas inlet channels is N, where N is a natural number greater than 1. During the growth process, the step of using the detection device to obtain the growth rates of different regions of the semiconductor material layer in the radial direction of the substrate includes: Using the detection device to obtain the material growth rate V of the substrate region corresponding to the (M - 1)-th compensation gas inlet channel on the semiconductor material layer M-1 , and obtaining the material growth rate V of the substrate region corresponding to the M-th compensation gas inlet channel adjacent to the (M - 1)-th compensation gas inlet channel M , where the (M - 1)-th compensation gas inlet channel is closer to the center of the gas injection device than the M-th compensation gas inlet channel, and M is a positive integer greater than or equal to 2 and less than or equal to N; Determine the type and flow rate of the compensation gas introduced from the (M - 1)-th compensation gas inlet channel according to the magnitude relationship between V M-1 and V M .

[0045] Specifically: After determining that V M-1 >V M , introduce the second source gas from the (M - 1)-th compensation gas inlet channel and control the flow rate to be M M-1 =γ(1 - (V M / V M-1 ))M H ; Where γ is a compensation coefficient, and γ = 0.8 to 1.2.

[0046] After determining that V M-1 <V M , introduce the first source gas from the (M - 1)-th compensation gas inlet channel and control the flow rate to be M M-1 =α((V M / V M-1 ) - 1)Mo; Where α is a compensation coefficient, and α = 0.8 to 1.2.

[0047] In an alternative embodiment, when N is a natural number greater than 1, the step of determining whether to introduce compensation gas through at least one of the compensation intake channels for synchronous gas compensation treatment according to each of the growth rates includes: Introduce the compensation gas from each compensation intake channel, and control the compensation gas flow provided by the compensation intake channel closer to the center of the gas injection device to be greater than or equal to the compensation gas flow provided by the other compensation intake channel among two adjacent compensation intake channels.

[0048] As described above, the method for manufacturing the above compound semiconductor of the present invention first provides a manufacturing apparatus for a compound semiconductor. The manufacturing apparatus provided by the present invention is provided with a detection device. Specifically, the manufacturing apparatus may be a Chemical Vapor Deposition (CVD) apparatus or a Physical Vapor Deposition (PVD) apparatus. The vapor deposition apparatus therein may be a Plasma-Enhanced Chemical Vapor Deposition (PECVD) apparatus, a Metal-organic Chemical Vapor Deposition (MOCVD) apparatus, etc. In this embodiment, the MOCVD apparatus is taken as an example for illustration. It should be understood that this apparatus is merely exemplary, and the manufacturing apparatus for the compound semiconductor provided by the present invention is not limited to this one.

[0049] Combined with Figure 9 , the manufacturing apparatus 10 has a cavity 104, and the cross-section of the cavity 104 is generally a circular or quasi-circular structure, or may be a rectangular structure and other structures well-known to those skilled in the art, which will not be elaborated here. As Figure 8 shown, in this embodiment, the manufacturing apparatus 10 includes a gas injection device 100, and the gas injection device 100 is disposed at the top of the cavity 104. The gas injection device 100 includes a body portion 110, and the body portion 110 is disposed at the top of the cavity 104 and forms a sealed space with the cavity 104 and the carrier device 200 in the cavity 104, and this sealed space forms a reaction space.

[0050] As Figure 2 shown, the gas injection device 100 of the manufacturing apparatus 10 includes a body portion 110, and a process intake channel 120 and a compensation intake channel 130. Among them, the process intake channel 120 is used to provide process gas. Specifically, a first source gas containing group III elements with a flow rate of M O and a flow rate of M HThe second source gas containing group-V elements; the compensation intake passage 130 is used to provide compensation gas, and the compensation gas is the above-mentioned first source gas or second source gas.

[0051] As Figure 2 shown, the main body portion 110 is a solid structure with a certain thickness, and has a top 111 and a bottom 112 arranged oppositely. The process intake passage 120 penetrates the main body portion 110 from the top 111 to the bottom 112, and provides process gas in the direction from the top 111 to the bottom 112. The outlet of the process intake passage 120 is located on the side of the bottom 112 of the main body portion 110. The process gas contains source material gas for forming a single crystal thin film through a chemical reaction. For example, when growing GaN, AlN, GaAs material layers, the process gas includes a first source gas containing a gallium source or an aluminum source (metal organic compound source and hydride gas), and a second source gas containing a nitrogen source or an arsenic source, and also includes hydrogen required for the growth of the material layer. Both the first source gas and the second source gas can be a mixed gas of multiple gases, such as a mixed gas of a carrier gas and a reaction gas or a mixed gas of multiple reaction gases of the same type.

[0052] In the growth process, the reaction temperature is controlled to be 700~1200 degrees Celsius, the reaction pressure is 50~100 mbar, and the flow rate M H of the second source gas and the flow rate M O of the first source gas H The ratio M O :M O is 30:1~5000:1. Further, the flow rate M H of the first source gas is controlled to be 50~500 ml / min, and the flow rate M

[0053] of the second source gas is 15~250 l / min. In an alternative embodiment, the second source gas includes hydrogen and a source gas containing group-V hydride. In the growth process, the flow rate of the source gas containing group-V hydride provided through each process intake passage is 0.5~50 l / min, and the flow rate of hydrogen is 10~200 l / min. When performing gas compensation treatment, the ratio between the flow rate of the first source gas introduced through each process intake passage 120 and the flow rate of the first source gas introduced through each compensation intake passage is controlled, and the ratio between the flow rate of the second source gas introduced through each process intake passage and the flow rate of the second source gas introduced through each compensation intake passage 130 is controlled to be 5:1~50:1. Further, the flow rate of the first source gas or the second source gas introduced through each compensation intake passage is 1~70 ml / min. Figure 2 shown, the process intake passage 120 is formed into a circular hole structure and is uniformly distributed in the main body portion 110.Figure 2 The process intake channel 120 shown is formed as a circular hole structure with different hole diameters. It can be understood that the process intake channel 120 can be set to different types according to the types of source material gases provided.

[0054] Taking the growth of a GaN material layer and / or an AlN material layer as an example, the process intake channel 120 includes a first process intake channel 121 and a second process intake channel 122 that respectively supply a metal organic compound source and a hydride gas. As Figure 2 shown, among them, the one with a larger hole diameter is the first process intake channel 121 as the supply channel for the metal organic compound source, and the one with a smaller hole diameter is the second process intake channel 122 as the supply channel for the hydride gas. The above-mentioned first process intake channel 121 and second process intake channel 122 can be evenly distributed in an interlaced manner to form an air curtain, or can be dispersed. For example Figure 3 shown, the first process intake channel 121 and the second process intake channel 122 are respectively arranged in a one-word interlaced pattern and form multiple rows. Or, alternatively, as Figure 4 shown, the first process intake channel 121 and the second process intake channel 122 are respectively circumferentially interlaced along different radii of the body portion 110.

[0055] It can be understood that in order to avoid unnecessary mixing or reaction of each source material gas before entering the reaction space, the process intake channels 120 for different source material gases are not connected to each other. As Figure 2 shown, a first air cavity 101 communicating with the first process intake channel 121 can be formed in the body portion 110. The first air cavity 101 is located in a radial plane of the body portion 110 and connects all the first process intake channels 121. At the same time, a second air cavity 102 is also formed in the body portion 110. The second air cavity 102 is located in another radial plane of the body portion 110, connects the second process intake channels 122, and is not connected to the first air cavity 101. Thus, independent intake of the first process intake channel 121 and the second process intake channel 122 is realized without interference.

[0056] Refer again to Figure 2, in this embodiment, in order to compensate for the thickness or growth rate non-uniformity existing in the growth process of the semiconductor material layer, a compensation gas inlet channel 130 is provided. The compensation gas inlet channel 130 is used to supply compensation gas, and the supplied compensation gas can be the above-mentioned first source gas or second source gas. In this embodiment, N compensation gas inlet channels 130 are provided in the body portion 110, where N is a natural number greater than or equal to 1. The compensation gas inlet channel 130 penetrates the body portion 110 along the direction from the top 111 to the bottom 112 of the body portion 110, and the outlet of the compensation gas inlet channel 130 is also located on the side of the bottom 112 of the body portion 110. Moreover, any of the compensation gas inlet channels 130 and any of the process gas inlet channels 120 are not connected to each other. The above-mentioned compensation gas inlet channels 130 are distributed in the areas where the process gas inlet channels 120 are located and do not affect the normal gas intake of the process gas inlet channels 120. Additionally, the respective outlets of the process gas inlet channels 120 and the compensation gas inlet channels 130 can be formed at the bottom 112 of the body portion 110 or can extend a certain distance from the bottom 112 of the body portion 110. Preferably, the outlets of the respective process gas inlet channels 120 and the respective compensation gas inlet channels 130 are located in the same plane.

[0057] In an alternative embodiment of this embodiment, one compensation gas inlet channel 130 is provided in the body portion 110, that is, N = 1. As Figure 5 shown, the compensation gas inlet channel 130 is provided in the middle area of the body portion 110, and further, at the center of the body portion 110. Thus, when the compensation gas is introduced through the compensation gas inlet channel 130, it can ensure that the compensation gas can be dispersed to different regions of the substrate 300, playing the role of compensating the source material gas.

[0058] In another alternative embodiment of this embodiment, a plurality of compensation gas inlet channels 130 are provided in the body portion 110, that is, N≥2. The N compensation gas inlet channels 130 are arranged radially along the center of the body portion 110, that is, the N compensation gas inlet channels 130 are distributed in different circumferences along the same radial direction of the body portion 110. Further, N is a positive integer greater than or equal to 2 and less than or equal to 4. If too many compensation gas inlet channels 130 are used, the influence between the airflows introduced by adjacent compensation gas inlet channels 130 increases, increasing the difficulty of regulation. By setting 2 to 4 compensation gas inlet channels 130, while compensating for the required source gas and achieving the growth uniformity of the material layer, the influence between the airflows introduced by adjacent compensation gas inlet channels 130 can be reduced, and the regulation difficulty can be lowered. For example, in some embodiments, there can be two compensation gas inlet channels 130, one of which is provided at the center of the body portion 110 and the other is provided on the radial circumference of the body portion 110. As Figure 5 shown (for the convenience of display, in Figures 5 to 7Only the compensation intake passage 130 is shown, and the process intake passage 120 is not shown. The process intake passage 120 also has Figure 2 or Figure 3 the settings shown). Taking three compensation intake passages 130 as an example, the three compensation intake passages 130 are located on the same radial direction of the body part 110 and on different circumferential directions of the body part 110. Among them, the first compensation intake passage 131 is distributed in the middle area of the body part 110, the second compensation intake passage 132 is distributed on the circumference C1, and the third compensation intake passage 133 is distributed on the circumference C2. The circumferences C1 and C2 are different circumferential directions with different radii on the body part 110.

[0059] There is a radial distance L1 between two adjacent compensation intake passages 130 located on different circumferential directions. Referring again to Figure 9 , the diameter of the carrying device 200 of the manufacturing apparatus 10 is D. In this embodiment, the ratio of the diameter D of the carrying device 200 to the radial distance L1 between two adjacent compensation intake passages 130 is 1.5:1 to 16:1. Among them, the radial distance between two adjacent compensation intake passages 130 is the radius difference between the two circumferences where the two adjacent compensation intake passages 130 are located. As Figure 5 shown, the radial distance L1 between the second compensation intake passage 132 and the third compensation intake passage 133 is the difference between the radius of the circumference C2 and the radius of the circumference C1.

[0060] Optionally, the radial distances between adjacent compensation air intake channels 130 are all the same, that is, the compensation air intake channels 130 are evenly distributed radially along the body portion 110. For example, in one embodiment, the diameter D of the carrying device 200 of the manufacturing equipment 10 is 320 mm. The first compensation air intake channel 131, the second compensation air intake channel 132, and the third compensation air intake channel 133 are equally spaced from the center of the body portion 110. And the first compensation air intake channel 131 is located at the center of the body portion 110, the second compensation air intake channel 132 is located on the circumference with a radius of 50 mm, and the third compensation air intake channel 133 is located on the circumference with a radius of 100 mm. That is, the radial distance between the first compensation air intake channel 131 and the second compensation air intake channel 132 and the radial distance between the second compensation air intake channel 132 and the third compensation air intake channel 133 are both 50 mm. In another embodiment, the diameter D of the carrying device 200 of the manufacturing equipment 10 is 600 mm. The first compensation air intake channel 131, the second compensation air intake channel 132, and the third compensation air intake channel 133 are equally spaced from the middle of the body portion 110. And the first compensation air intake channel 131 is located at the center of the body portion 110, the second compensation air intake channel 132 is located on the circumference with a radius of 70 mm, and the third compensation air intake channel 133 is located on the circumference with a radius of 140 mm. That is, the radial distance between the first compensation air intake channel 131 and the second compensation air intake channel 132 and the radial distance between the second compensation air intake channel 132 and the third compensation air intake channel 133 are both 70 mm. In another embodiment, the diameter D of the carrying device 200 of the manufacturing equipment 10 is 800 mm. The first compensation air intake channel 131, the second compensation air intake channel 132, and the third compensation air intake channel 133 are equally spaced from the middle of the body portion 110. And the first compensation air intake channel 131 is located at the center of the body portion 110, the second compensation air intake channel 132 is located on the circumference with a radius of 100 mm, and the third compensation air intake channel 133 is located on the circumference with a radius of 200 mm. That is, the radial distance between the first compensation air intake channel 131 and the second compensation air intake channel 132 and the radial distance between the second compensation air intake channel 132 and the third compensation air intake channel 133 are both 100 mm.

[0061] In other embodiments, the radial distances between adjacent compensation air intake channels 130 are not exactly the same. For example, the radial distances between at least two groups of adjacent compensation air intake channels 130 are equal.

[0062] The above is only described by taking three compensation air intake channels 130 as an example. It can be understood that more compensation air intake channels 130 can be provided in different circumferences along the same radial direction.

[0063] In another alternative embodiment, a plurality of compensation air intake channels 130 are also provided, i.e., N≥2. Among the N compensation air intake channels 130, at least two compensation air intake channels 130 are located in the same circumferential direction of the body portion 110. As Figure 7 shown, taking 4 compensation air intake channels 130 as an example, a first compensation air intake channel 131 is arranged at the central position of the body portion 110, and two second compensation air intake channels are distributed on the circumference C1 close to the center of the body portion 110. The two second compensation air intake channels are respectively a first second compensation air intake channel 1321 and a second second compensation air intake channel 1322, and a third compensation air intake channel 133 is distributed on the circumference C2 outside the circumference C1. Among them, the first compensation air intake channel 131, the first second compensation air intake channel 1321 and the third compensation air intake channel 133 are distributed on the same radial direction R1 of the body portion 110, and the second second compensation air intake channel 1322 located on the same circumferential circle C1 as the first second compensation air intake channel 1321 is located on a different radial direction R2.

[0064] In another alternative embodiment, a plurality of compensation air intake channels 130 are also provided, i.e., N≥2. Among the N compensation air intake channels 130, except for the compensation air intake channel 130 located at the center of the body portion 110, the remaining compensation air intake channels 130 are all distributed in different circumferential directions of the body portion 110. As Figure 8 shown, taking three compensation air intake channels 130 as an example, the first compensation air intake channel 131 is located in the middle of the body portion 110, the second compensation air intake channel 132 is located on the circumference C1 in the radial direction R1, and the third compensation air intake channel 133 is located on the circumference C2 in the radial direction R2.

[0065] As Figures 5 to 8 shown, the compensation air intake channel 130 of this embodiment is set as a hole-type structure penetrating the body portion 110, such as a hole-type structure with a circular and / or elliptical cross-section. It can be understood that in an alternative embodiment, the compensation air intake channel 130 can be set as a slit-type structure penetrating the body portion 110. In other alternative embodiments, in the direction from the top 111 to the bottom 112 of the body portion 110, the aperture of the hole-type structure can be the same or can be in a gradually changing pattern. For example, in the direction from the top 111 to the bottom 112 of the body portion 110, the aperture of the hole-type structure gradually decreases or gradually increases.

[0066] The above settings of the compensation air intake channel 130 facilitate providing compensation gas to different regions of the substrate 300, or adjusting the air volume, air supply duration, air supply type, etc. of each compensation air intake channel 130 as needed. Therefore, a compensation mechanism can be customized as needed.

[0067] Refer to again Figure 9, the manufacturing apparatus 10 of this embodiment further includes a carrying device 200 disposed in the cavity 104 to carry a substrate 300 on which a semiconductor material layer is to be grown. The gas outlet of the gas injection device 100 is disposed opposite to one side of the carrying surface of the carrying device 200. One side of the carrying surface of the carrying device 200 is used to carry the substrate 300 to be processed. The carrying device 200 may be a graphite disk having a certain diameter, or may be other structures well known to those skilled in the art. A rotating device 400 penetrating the cavity 104 is disposed below the carrying device 200. The rotating device 400 supports the carrying device 200 and can drive the carrying device 200 to rotate around its axis during epitaxial growth under the drive of a motor. In an alternative embodiment, during the growth process, the carrying device 200 is controlled to rotate around its axis at a rate of 10 to 1200 rpm to drive the substrate 300 carried by the carrying device 200 to rotate at the same speed.

[0068] As Figure 10 shown, there are a plurality of wafer areas 201 on the carrying surface of the carrying device 200 of this embodiment. The wafer areas 201 are used to place the substrate 300 to be processed, such as a wafer. The wafer areas 201 are arranged around the middle area of the wafer device so that each wafer area 201 is exposed to the environment of the reaction space. The gas injection device 100 and the carrying device 200 are disposed opposite to each other. Specifically, the gas outlet side of the gas injection device 100 is disposed opposite to one side of the carrying surface of the carrying device 200, and a reasonable vertical distance is maintained between the gas injection device 100 (specifically, the gas outlet side) and the carrying device 200 to ensure that the process gas can react on the surface of the substrate 300 on the carrying device 200 to achieve material growth, while ensuring the uniformity of the film quality of epitaxial growth in the same batch.

[0069] In an alternative embodiment, as Figure 9 shown, the ratio of the diameter D of the carrying device 200 to the vertical height H from the gas outlet of the gas injection device 100 to the carrying surface is 1.875:1 to 160:1. For example, D and H can be the following combinations respectively: D = 320 mm, H = 30 mm; D = 200 mm, H = 5 mm; D = 320 mm, H = 25 mm; D = 150 mm, H = 15 mm; D = 600 mm, H = 15 mm; D = 800 mm, H = 5 mm; D = 800 mm, H = 80 mm.

[0070] The number and arrangement of the wafer areas 201 on the carrying device 200 can be flexibly adjusted according to process requirements, and it is necessary to ensure that each wafer area 201 is exposed to the environment of the reaction space. In some embodiments, as Figure 10As shown, each wafer carrier area 201 on the carrier device 200 is distributed in a circular array around the middle area of the carrier device 200. The carrier device 200 can be a disc, and the sizes of the distributed wafer carrier areas 201 thereon can be the same, completely different, or not completely the same. For example, each wafer carrier area 201 is used to carry an 8-inch wafer or a 12-inch wafer, or some wafer carrier areas 201 are used to carry 8-inch wafers and other wafer carrier areas 201 are used to carry 12-inch wafers. In an alternative embodiment, the manufacturing equipment 10 is further provided with a heating device, which is arranged below the carrier device 200. The heating device heats the carrier device 200 and then transfers heat to the substrate 300 to heat the substrate 300. The process gas flows through the carrier device 200 after being ejected from the gas injection device 100 and can be quickly heated by the heat transfer of the carrier device 200 to cause a growth reaction, such as epitaxial growth, above the substrate 300 to achieve material growth.

[0071] In this embodiment, in order to introduce the process gas and the compensation gas from the process gas inlet channel 120 and the compensation gas inlet channel 130 of the gas injection device 100, the manufacturing equipment 10 of this embodiment is further provided with a gas supply channel, which includes a process gas supply channel 500 communicating with the process gas inlet channel 120 and a compensation gas supply channel 600 communicating with the compensation gas inlet channel 130, and the compensation gas supply channel 600 is not communicated with the process gas supply channel 500.

[0072] Taking the gas injection device 100 having the first process gas inlet channel 121 and the second process gas inlet channel 122 described in Embodiment 1 as an example, as Figure 11 shown, the process gas supply channel 500 includes a second process gas supply channel 502 communicating with the first gas chamber 101 to further communicate with the first process gas inlet channel 121, and a first process gas supply channel 501 communicating with the second gas chamber 102 to further communicate with the second process gas inlet channel 122. The first process gas supply channel 501 and the second process gas supply channel 502 are not communicated with each other and are controlled separately. The first process gas supply channel 501 and the second process gas supply channel 502 respectively supply different source material gases. For example, taking the growth of a GaN material layer and / or an AlN material layer as an example, the first process gas supply channel 501 is used to supply a first source gas containing a metal organic compound source, and the second process gas supply channel 502 is used to supply a second source gas containing a nitrogen source or an arsenic source, etc.

[0073] The compensation gas supply channel 600 is connected to the compensation gas inlet channel 130, as Figure 11As shown, when a compensation air intake channel 130 located in the middle of the main body 110 is provided in the main body 110, a compensation air supply channel 600 is correspondingly provided. The compensation air supply channel 600 includes a main pipeline 6000 connected to the compensation air intake channel 130, and a plurality of branch pipelines extending from the main pipeline 6000. Taking the growth of a GaN material layer and / or an AlN material layer as an example, it includes two branch pipelines: a first compensation branch pipeline 600-1 and a second compensation branch pipeline 600-2. For example, the first compensation branch pipeline 600-1 is introduced with a metal organic compound source, and the second compensation branch pipeline is introduced with a hydride gas. A compensation air supply control device is also provided on the compensation air supply channel 600, such as valves, switches, etc. that can realize the connection or disconnection between the compensation air supply channel 600 and the compensation air intake channel 130. Specifically, the above compensation air supply control devices can be respectively provided on the main pipeline 6000 and each branch pipeline.

[0074] When the number N of the compensation air intake channels 130 is N≥2, the compensation air supply channel 600 is connected to the compensation air intake channels 130 in a one-to-one correspondence. Taking the setting of 3 compensation air intake channels 130 as an example, as Figure 12 shown (for the convenience of display, Figure 12 and Figure 13 only the compensation air supply channel 600 is shown, and the process air supply channel 500 is not shown. It can be understood that the process air supply channel 500 has the same or similar settings as Figure 10 shown), in an alternative embodiment, each compensation air intake channel 130 is respectively connected to a compensation air supply channel 600, that is, the first compensation air intake channel 131 is connected to the first compensation air supply channel 601, the second compensation air intake channel 132 is connected to the second compensation air supply channel 602, and the third compensation air intake channel 133 is connected to the third compensation air supply channel 603. And the first compensation air supply channel 601, the second compensation air supply channel 602, and the third compensation air supply channel 603 all include a main pipeline 6000 connected to the compensation air intake channel 130, and a plurality of branch pipelines extending from the main pipeline 6000. The settings of this compensation air supply channel are the same as those of the compensation air supply channel 600 shown in Figure 10 and will not be elaborated here.

[0075] In an alternative embodiment, when the number N of the compensation air intake channels 130 is N≥2, the manufacturing equipment 10 includes a compensation air supply channel 600. The compensation air supply channel 600 includes a main pipeline 6000. The intake end of the main pipeline 6000 includes a plurality of intake branch pipelines, and the outlet end of the main pipeline 6000 includes a plurality of outlet branch pipelines. The number of the intake branch pipelines is determined by the types of reaction gases required for epitaxial growth occurring in the cavity 104, and the number of the outlet branch pipelines is determined by the number of the compensation air intake channels 130 of the main body 110.

[0076] Taking the setting of three compensation intake channels 130 as an example, as Figure 13 shown, taking the growth of a GaN material layer and / or an AlN material layer as an example, the compensation gas supply channel 600 includes a main pipeline 6000. The intake end of the main pipeline 6000 includes two compensation branch pipelines. Among them, the first compensation branch pipeline 600-1 leads to a metal organic compound source, and the second compensation branch pipeline 600-2 leads to a hydride gas. The outlet end of the main pipeline 6000 includes three outlet branch pipelines. The first outlet branch pipeline 6001 is connected to the first compensation intake channel 131, the second outlet branch pipeline 6002 is connected to the second compensation intake channel 132, and the third outlet branch pipeline 6003 is connected to the third compensation intake channel 133. Correspondingly, a compensation gas supply control device (valve, switch, etc.) can be provided on the main pipeline 6000 and / or each intake branch pipeline and / or each outlet branch pipeline to realize the connection or disconnection between the compensation gas supply channel 600 and the compensation intake channel 130.

[0077] In an alternative embodiment, the manufacturing apparatus 10 is further provided with a compensation gas supply control device and a compensation control device. The detection device is disposed in the body portion 110 and is used to detect the substrate 300 in the chamber during the epitaxial growth process to obtain growth parameters of the material grown on the substrate 300, such as the growth rate, the thickness of the material layer, etc. In an alternative embodiment, the detection device can be a non-contact detection device, which is disposed on the top 111 of the body portion 110 of the gas injection device 100, and one or more detection devices can be provided. Preferably, any compensation intake channel 130 can be used as the detection channel of the non-contact detection device, or the process intake channel 120 closest to any compensation intake channel 130 can be used as the detection channel of the non-contact detection device. Further, at least one compensation intake channel 130 near the edge of the body portion 110 is used as the detection channel. When one detection device is provided, since the carrier device 200 drives the substrate 300 to rotate during the epitaxial growth process, growth parameters on different substrates 300 in different carrier areas or growth parameters of different regions on the same substrate 300 can be obtained at different time points; when multiple detection devices are provided, growth parameters on different substrates 300 in different carrier areas or growth parameters of different regions on the same substrate 300 can be obtained at the same time point or at different time points.

[0078] Referring again to Figure 6, when the N compensation air intake channels 130 (the first compensation air intake channel 131, the second compensation air intake channel 132, the third compensation air intake channel 133,..., the Nth compensation air intake channel 13N) of the present invention are arranged in sequence along the radial direction of the body part 110 of the gas injection device 100 starting from the middle, N detection devices can be set, and the N detection devices (the first detection device T1, the second detection device T2, the third detection device T3,..., the Nth detection device TN) are sequentially arranged at the above-mentioned respective compensation air intake channels. The above-mentioned respective detection devices can detect parameters such as the temperature at the corresponding position and the refractive index of the semiconductor material layer. Each detection device detects and obtains the growth rate of the semiconductor material layer in the area corresponding to the compensation air intake channel where it is located. Therefore, by setting the above-mentioned N detection devices, the growth rates of different regions of the semiconductor material layer in the radial direction of the substrate can be obtained.

[0079] The compensation gas supply control device is arranged in the compensation gas supply channel 600 and is used to control the opening and closing of the corresponding compensation gas supply channel 600. The compensation control device is communicatively connected to the detection device and the compensation gas supply control device, and is used to obtain the above-mentioned growth parameters detected by the detection device, and control the compensation gas supply control device to perform opening and closing control on the compensation gas supply channel 600 according to the growth parameters. Specifically, the compensation control device compares the growth parameters (such as growth rate, material layer thickness) of different substrates 300 or different regions of the same substrate 300 according to the received growth parameters. When the growth parameters deviate, the compensation control device controls the compensation gas supply control device to open, and passes the compensation gas into the chamber through the compensation air intake channel 130. During this process, the detection device real-time feeds back the growth parameters of the material, and the compensation control device real-time receives and compares the growth parameters until there is no difference between the growth parameters, and the compensation control device controls the compensation air intake control device to close and stop passing the compensation gas into the chamber.

[0080] Repeat the above process until the material growth is completed. The material layer grown by the manufacturing equipment 10 provided by this embodiment has a uniform thickness, that is, the material layer thickness and quality are uniform between different substrates 300 in different loading areas of the loading device 200; the material layer thickness and quality are uniform in different regions of the same substrate 300.

[0081] To realize the opening and closing of components related to the semiconductor material growth process such as the above-mentioned detection device, compensation air intake channel, process air intake channel, etc., and the processing of various relevant data and the adjustment of relevant parameters related to the semiconductor growth process, the manufacturing equipment 10 provided by the present invention further includes different functional modules. Specifically, as Figure 14As shown in the figure, the manufacturing equipment 10 of the present application includes a detection module that communicates with the detection device in a one-to-one correspondence, and a source gas compensation module that communicates with each compensation intake passage 130 in a one-to-one correspondence. It also includes an equipment parameter input module for setting parameters (such as temperature, pressure, etc.) inside the cavity 104 of the manufacturing equipment 10, and other function expansion modules (such as a visualization module, etc.). The manufacturing equipment 10 further includes an internal data calculation module, which communicates with the above-mentioned detection module, source gas compensation module, equipment parameter input module, and function expansion module to receive the data transmitted by the above-mentioned modules, analyze each data, and then feedback to each module. Each module controls the corresponding components to make opening and closing actions to complete the adjustment of the production process.

[0082] Embodiment 1 This embodiment provides a method for manufacturing a compound semiconductor. The manufacturing equipment provided by this method is an MOCVD equipment, and this MOCVD equipment is used for epitaxial growth of GaN materials.

[0083] Similarly, reference can be made to Figure 9 , this MOCVD equipment also includes a cavity 104, a carrier device 200, a heating device, a detection device, and a gas injection device 100. The gas injection device 100 is arranged at the top of the cavity 104, and the substrate 300 for growing the above-mentioned semiconductor compound is placed in the carrier area of the carrier device 200. In this embodiment, the above-mentioned substrate 300 is a sapphire substrate. The gas injection device 100 has a plurality of process intake passages 120 and N compensation intake passages 130. The process intake passages 120 are the main conveying channels for the source gas, and the compensation intake passages 130 are used as the compensation conveying channels for the source gas. In this embodiment, the diameter D of the carrier device 200 is 320 mm, and the vertical distance H from the outlet (bottom surface) of the gas injection device 100 to the carrier surface of the carrier device 200 (that is, to the surface of the substrate 300 carried by the carrier device 200) is 30 mm. The reaction temperature inside the cavity 104 is controlled to be 1050 °C, the reaction pressure is 100 mbar, and the carrier device 200 rotates at a speed of 1000 rmp driven by a rotating device 400 (for example, a rotating shaft). The detection device can detect the temperature on the surface of the carrier device 200 and the surface of the semiconductor material layer grown on the substrate, and can also detect the reflectivity of the surface of the semiconductor material layer grown on the substrate. The growth rate of the semiconductor material layer in the corresponding area can be calculated through this reflectivity. The detection device is specifically an MOCVD online monitoring system viperRTC–LSS, which calculates the growth rate by using the change in the reflectivity of the light on the surface of the growing thin film. The specific installation method and working method on the cavity 104 are conventional technical means in the art.

[0084] In this embodiment, the process gas inlet channel 120 in the gas injection device includes a channel for the first source gas (metal organic compound source) and a channel for the second source gas (ammonia and hydrogen), and the channels for ammonia and hydrogen are alternately distributed with the metal organic compound source channel. Referring again to Figure 4 , where the first process gas inlet channel 121 serves as the supply channel for the first source gas, and the second process gas inlet channel 122 serves as the channel for the second source gas. The above-mentioned first process gas inlet channel 121 and second process gas inlet channel 122 are arranged in a one-word staggered pattern to form an air curtain and form multiple rows. The gas injection device 100 is provided with a compensation gas inlet channel 130, that is, N = 1, and this compensation gas inlet channel 130 is arranged at the central position of the gas injection device 100.

[0085] Referring to Figure 11 , in this embodiment, corresponding to the above-mentioned single compensation gas inlet channel 130, a compensation gas supply channel 600 is provided. This compensation gas supply channel 600 includes a main pipeline 6000 connected to the compensation gas inlet channel 130, and a first compensation branch pipeline 600-1 and a second compensation branch pipeline 600-2 extending from the main pipeline 6000. The first compensation branch pipeline 600-1 and the second compensation branch pipeline 600-2 do not affect each other and are independently controlled.

[0086] In this embodiment, trimethylgallium source as the gallium source is introduced into each first process gas inlet channel 121 at a rate of 50 ml / min, and ammonia as the nitrogen source and hydrogen are introduced into each second process gas inlet channel 122 at rates of 10 L / min and 30 L / min respectively. That is, in this embodiment, M O = 50 ml / min, M H = 40 L / min. Without gas compensation, the growth rate of the GaN material in the inner circle (within the range of 1 / 3 of the diameter from the center of an 8-inch wafer) in the radial direction of the substrate is measured to be 2.3 μm / h, and the growth rate of the outer circle is 2.6 μm / h by the detection device using the compensation gas inlet channel 130 and each gas inlet channel. It can be seen that without any gas compensation, there is a large growth rate difference in different radial ranges of the same substrate, that is, the grown GaN material layer has serious non-uniformity. In addition, without any gas compensation, the growth rate of the GaN material layer in the inner circle of the substrate is less than that of the GaN material layer in the outer circle (i.e., V M-1 <V M), from which it can be determined that during the growth process of the GaN material layer, the inner circle needs to compensate for the metal organic compound source gas. Specifically, in the growth process, since the second source gas is introduced in excess relative to the first source gas, and the carrier device 200 rotates to a certain speed range driven by the rotating device 400, the process gas above the substrate is dragged by the rotation of the carrier device 200 to form a rotating air flow and flow towards the edge of the carrier device 200. Therefore, the growth rate of the outer circle tends to be higher than that of the inner circle. To compensate for the growth rate of the inner circle, the metal organic compound source gas is compensated and introduced from the central compensation air inlet channel 130.

[0087] To eliminate the above growth rate difference between the inner and outer circles of the substrate and achieve the uniformity of the thickness of the GaN material layer on the inner and outer circles of the substrate, during the growth of the GaN material, according to the compensation formula M M-1 =α((V M / V M-1 ) - 1)Mo, where α = 0.92, V M and V M-1 respectively correspond to the above-mentioned outer circle growth rate and inner circle growth rate, and the gas flow rate M M-1 that needs to be compensated is calculated to be 4 ml / min.

[0088] Specifically, the internal data calculation module receives the thickness values of the above inner and outer circles, calculates the gas flow rate M M-1 that needs to be compensated according to the above compensation formula, and then transmits the obtained gas flow rate M M-1 to the source gas compensation module. The source gas compensation module controls the corresponding first compensation branch pipeline 600-1 to open according to the gas type to be compensated as the metal organic compound source gas, so as to introduce 4 ml / min of trimethylgallium, a metal organic compound source gas, into the compensation air inlet channel, while the second compensation branch pipeline 600-2 does not perform gas compensation. Growth continues for 2 hours. After the growth process is completed, the average thickness of the inner circle of the GaN material layer is measured to be 5.2 μm and the outer circle is 5.2 μm using an atomic force microscope (AFM), achieving the uniformity of the thickness of the GaN material layer.

[0089] Example Two This example uses the MOCVD equipment of Example One to grow GaN materials, the difference being: In this embodiment, the diameter D of the carrying device 200 of the manufacturing equipment 10 is 200 mm, and the vertical distance H from the air outlet of the gas injection device 100 to the carrying surface of the carrying device 200 is 5 mm. The rotation speed of the carrying device 200 is controlled to be 10 rmp. In this embodiment, 50 milliliters per minute of trimethylgallium source is introduced through the first process air inlet channel 121, and 10 liters per minute of ammonia and 30 liters per minute of hydrogen are introduced through the second process air inlet channel 122. That is, in this embodiment, M O = 50 milliliters per minute, M H = 40 liters per minute. Without gas compensation, during the growth process of the GaN material layer, the inner ring growth rate detected by the detection device is 2.3 micrometers per hour, and the outer ring growth rate is 2.5 micrometers per hour.

[0090] As above, without any gas compensation, the growth rate of the GaN material layer in the inner ring of the substrate is less than that of the GaN material layer in the outer ring (i.e., V M-1 <V M ). Thus, it can be judged that during the growth process of the GaN material layer, the inner ring needs to be compensated with metal organic compound source gases. Therefore, according to the compensation formula M M-1 = α((V M / V M-1 ) - 1)Mo, where α = 0.92, V M and V M-1 respectively correspond to the above-mentioned outer ring growth rate and inner ring growth rate, and the required gas flow rate M M-1 = 4 milliliters per minute is calculated.

[0091] 4 milliliters per minute of trimethylgallium, a metal organic compound source gas, is introduced into the compensation air inlet channel 130 through the first compensation branch pipeline 600 - 1, while the second compensation branch pipeline 600 - 2 for compensating hydride gas is not gas-compensated. After automatic modulation by the system, during the growth process of the GaN material layer, the inner ring growth rate detected by the detection device is 2.6 micrometers per hour, and the outer ring growth rate is 2.6 micrometers per hour. After continuous growth for 2 hours, the average thickness of the GaN material layer in the inner ring measured by AFM is 5.2 micrometers, and the outer ring is 5.2 micrometers, realizing the uniformity of the thickness of the GaN material layer.

[0092] Example Three In this example, the MOCVD equipment of Example One is used to grow GaN materials, and the differences are as follows: In this embodiment, the diameter D of the carrying device 200 is 150 mm, and the vertical distance H from the air outlet of the gas injection device 100 to the carrying surface of the carrying device 200 is 15 mm. The carrying device 200 rotates at a speed of 500 rmp driven by the rotating shaft. The setting of the compensation air inlet channel refers toFigure 5 and Figure 12 As shown in Figure 12 , three compensation intake channels are arranged along the same radial direction of the main body part 110 of the gas injection device from the center of the main body part. The first compensation intake channel 131 is arranged at the central position of the main body part 110, the second compensation intake channel 132 is arranged on the circumference 50 mm away from the central position of the main body part 110, and the third compensation intake channel 133 is arranged on the circumference 100 mm away from the central position of the main body part.

[0093] Similarly referring to Figure 13 , in this embodiment, a single compensation gas supply channel 600 is provided. The compensation gas supply channel 600 includes a main pipeline 6000. The intake end of the main pipeline 6000 includes two compensation branch pipelines. The first compensation branch pipeline 600-1 is used for introducing a metal organic compound source, and the second compensation branch pipeline 600-2 is used for introducing a hydride gas. The outlet end of the main pipeline 6000 includes three outlet branch pipelines. The first outlet branch pipeline 6001 is communicated with the first compensation intake channel 131, the second outlet branch pipeline 6002 is communicated with the second compensation intake channel 132, and the third outlet branch pipeline 6003 is communicated with the third compensation intake channel 133. Control devices (such as pneumatic valves) are respectively arranged on the main pipeline 6000 at the front ends of the respective outlet branch pipelines and on the first compensation branch pipeline and the second compensation branch pipeline, so that the first compensation branch pipeline 600-1 and the second compensation branch pipeline 600-2 are connected in parallel to enter the main pipeline, and the two do not affect each other and are independently controlled. The compensated source gas is uniformly transported into the cavity 104 through the three outlet branch pipelines as source material compensation.

[0094] In this embodiment, trimethylgallium source at 50 ml / min is introduced through the first process intake channel 121, and ammonia gas at 5 L / min and hydrogen gas at 10 L / min are introduced through the second process intake channel 122. That is, in this embodiment, M O = 50 ml / min, M H = 15 L / min. Without gas compensation, the growth rate of the GaN material layer in the inner circle is measured to be 2.3 μm / h, and the growth rate of the outer circle is 2.75 μm / h.

[0095] As above, without any gas compensation, the growth rate of the GaN material layer in the inner circle of the substrate is less than that of the GaN material layer in the outer circle (i.e., V M-1 <V M ). From this, it can be judged that during the growth process of the GaN material layer, the inner circle needs to be compensated with metal organic compound source gases. Therefore, according to the compensation formula M M-1 =α((V M / V M-1 ) - 1)Mo, where α = 0.92, V M 、VM-1 Corresponding to the above-mentioned outer ring growth rate and inner ring growth rate respectively, the gas flow rate M to be compensated for each gas outlet branch pipeline is calculated M-1 = 4 ml / min. Therefore, the gas flow rate required in the main pipeline of the three gas outlet branch pipelines is 12 ml / min.

[0096] Trimethylgallium is introduced into the main pipeline from the first compensation branch pipeline 600-1 at a rate of 12 ml / min, while the second compensation branch pipeline 600-2 for compensating hydride gas does not perform gas compensation. The 12 ml / min of trimethylgallium introduced into the main pipeline is divided into three paths and enters the first gas outlet branch pipeline 6001, the second gas outlet branch pipeline 6002, and the third gas outlet branch pipeline 6003 at a flow rate of 4 ml / min respectively, and then is uniformly transported into the cavity 104 through the first compensation intake channel 131, the second compensation intake channel 132, and the third compensation intake channel 133 as source material compensation. The continuous growth time is 2 hours. The average thickness of the inner ring of the GaN material measured by AFM is 5.5 microns, and the outer ring is 5.5 microns, achieving the uniformity of the thickness of the GaN material layer.

[0097] Example 4 In this example, a GaN material is grown using the MOCVD equipment of Example 3, and the difference is that: In this example, the diameter D of the carrier device 200 of the manufacturing equipment 10 is 320 mm, and the vertical distance H from the gas outlet of the gas injection device 100 to the bearing surface of the carrier device 200 is 30 mm. The carrier device 200 is controlled to rotate at a speed of 1200 rmp driven by the rotating shaft. Similarly referring to Figure 13 In this example, a single compensation gas supply channel 600 is provided. The compensation gas supply channel 600 includes a main pipeline 6000. The intake end of the main pipeline 6000 includes two compensation branch pipelines, where the first compensation branch pipeline 600-1 is used to introduce a metal organic compound source, and the second compensation branch pipeline 600-2 is used to introduce a hydride gas. The outlet end of the main pipeline 6000 includes three gas outlet branch pipelines. The first gas outlet branch pipeline 6001 is connected to the first compensation intake channel 131, the second gas outlet branch pipeline 6002 is connected to the second compensation intake channel 132, and the third gas outlet branch pipeline 6003 is connected to the third compensation intake channel 133.

[0098] In this example, 50 ml / min of trimethylgallium source is introduced through the first process intake channel 121, and 15 L / min of ammonia gas and 25 L / min of hydrogen gas are introduced through the second process intake channel 122. That is, in this example, M O = 50 ml / min, M H= 40 L / min. Without gas compensation, the growth rate of the inner-ring GaN material layer was measured to be 2.6 μm / h, and the growth rate of the outer ring was 2.4 μm / h.

[0099] As can be seen above, in this embodiment, the growth rate of the inner ring is greater than that of the outer ring, that is, V M-1 > V M , from which it can be judged that the second source gas needs to be compensated. Therefore, according to the compensation formula: M M-1 = γ(1 - (V M / V M-1 ))M H Among them, V M , V M-1 correspond to the above-mentioned outer-ring growth rate and inner-ring growth rate respectively, γ = 1.2, and M H is the total gas flow rate of the second source gas introduced into the process gas inlet channel 120. The flow rates of ammonia and hydrogen introduced into the compensation gas inlet channel 130 are: 1.4 L / min for ammonia and 2.3 L / min for hydrogen. The total gas flow rate required in the main pipeline of the three outlet branch pipelines is 11.1 L / min, including 6.9 L / min of hydrogen and 4.2 L / min of ammonia.

[0100] Hydrogen at 6.9 L / min and ammonia at 4.2 L / min are introduced into the main pipeline by the second compensation branch pipeline 600-2, while the first compensation branch pipeline 600-1 for compensating the metal organic compound source gas is not gas-compensated. The hydrogen at a flow rate of 6.9 L / min and ammonia at a flow rate of 4.2 L / min introduced into the main pipeline are divided into three paths and enter the first outlet branch pipeline 6001, the second outlet branch pipeline 6002, and the third outlet branch pipeline 6003 at flow rates of 2.3 L / min of hydrogen and 1.4 L / min of ammonia respectively, and then are uniformly transported into the cavity 104 through the first compensation gas inlet channel 131, the second compensation gas inlet channel 132, and the third compensation gas inlet channel 133 as source material compensation. The continuous growth time is 2 hours. The average thickness of the inner ring of the GaN material measured by AFM is 5.0 μm, and the outer ring is 5.0 μm, achieving the thickness uniformity of the GaN material layer.

[0101] Example Five This embodiment uses the MOCVD equipment of Example 3 to grow GaN materials as well. The difference is that: In this embodiment, the diameter D of the carrying device 200 of the manufacturing equipment 10 is 320 mm, and the vertical distance H from the gas outlet of the gas injection device 100 to the carrying surface of the carrying device 200 is 30 mm. The carrying device 200 is controlled to rotate at a speed of 500 rmp driven by the rotating shaft. The setting of the compensation gas inlet channel refers to Figure 5 and Figure 11As shown in the figure, three compensation air intake channels are arranged along the same radial direction of the main body part of the gas injection device from the middle of the main body part. The first compensation air intake channel 131 is arranged at the central position of the main body part 110, the second compensation air intake channel 132 is arranged on the circumference 50 mm away from the central position of the main body part, and the third compensation air intake channel 133 is arranged on the circumference 100 mm away from the central position of the main body part.

[0102] Similarly referring to Figure 12 , in this embodiment, each compensation air intake channel 130 is respectively connected to a compensation air supply channel 600. That is, the first compensation air intake channel 131 is connected to the first compensation air supply channel 601, the second compensation air intake channel 132 is connected to the second compensation air supply channel 602, and the third compensation air intake channel 133 is connected to the third compensation air supply channel 603. And the first compensation air supply channel 601, the second compensation air supply channel 602, and the third compensation air supply channel 603 all include a main pipeline 6000 connected to the compensation air intake channel 130, and a first compensation branch pipeline 600-1 and a second compensation branch pipeline 600-2 extending from the main pipeline 6000. The first compensation branch pipeline 600-1 is used to introduce the metal organic compound source, and the second compensation branch pipeline 600-2 is used to introduce the hydride gas. Control devices (such as pneumatic valves) are respectively arranged on the main pipeline 6000 of each compensation air supply channel 600 and on the first compensation branch pipeline and the second compensation branch pipeline, so that the first compensation branch pipeline 600-1 and the second compensation branch pipeline 600-2 are connected in parallel to enter the respective connected main pipelines, and each compensation air supply channel 600 and its respective first compensation branch pipeline 600-1 and second compensation branch pipeline 600-2 do not affect each other and are independently controlled.

[0103] In this embodiment, trimethylgallium source at 50 milliliters per minute is introduced through the first process air intake channel 121, and ammonia at 15 liters per minute and hydrogen at 25 liters per minute are introduced through the second process air intake channel 122. That is, in this embodiment, M O = 50 milliliters per minute, M H = 40 liters per minute. Without gas compensation, the growth rate of the GaN material layer in the inner circle (within the range of 1 / 3 of the diameter from the center of the 8-inch wafer) is 2.4 micrometers per hour, the growth rate in the middle circle (from the outer edge of the inner circle to the outer edge of the range of 2 / 3 of the diameter from the center) is 2.5 micrometers per hour, and the growth rate in the outer circle is 2.6 micrometers per hour.

[0104] As can be seen above, in this embodiment, the growth rate of the inner circle is less than that of the middle circle, and the growth rate of the middle circle is less than that of the outer circle, that is, all satisfy V M-1 < V M , from which it can be judged that the first source gas needs to be introduced into the M-1 compensation air intake channel. Therefore, according to the compensation formula MM-1 = α((V M / V M-1 ) - 1)Mo, where α = 1. It is calculated that 4 ml / min of trimethylgallium needs to be introduced into the first compensation intake channel 131. The metal-organic compound source gas to be compensated decreases towards the outside. 2 ml / min of trimethylgallium needs to be introduced into the second compensation intake channel 132, and 1 ml / min of trimethylgallium needs to be introduced into the third compensation intake channel 133.

[0105] Thus, the first compensation branch pipelines 600-1 of the first compensation gas supply channel 601, the second compensation gas supply channel 602, and the third compensation gas supply channel 603 are respectively controlled to be opened, and the metal-organic compound source is introduced into their respective main pipelines at the flow rates of 4 ml / min, 2 ml / min, and 1 ml / min respectively. Then, trimethylgallium is compensated into the cavity 104 through the first compensation intake channel 131, the second compensation intake channel 132, and the third compensation intake channel 133 respectively. The second compensation branch pipelines 600-2 of the first compensation gas supply channel 601, the second compensation gas supply channel 602, and the third compensation gas supply channel 603 are closed, and no hydride gas compensation is performed. The continuous growth time is 2 hours. The average thickness of the inner circle of the GaN material measured by AFM is 5.5 μm, and the outer circle is 5.5 μm, realizing the uniformity of the thickness of the GaN material layer.

[0106] Example Six In this example, an AlN material is grown using the MOCVD equipment of Example One. The differences are as follows: In this example, the diameter D of the carrier device of the manufacturing equipment 10 is 600 mm, and the vertical distance H from the gas outlet of the gas injection device 100 to the bearing surface of the carrier device 200 is 15 mm. The reaction temperature in the cavity 104 is controlled to be 1200 °C, the reaction pressure is 50 mbar, and the carrier device 200 rotates at a speed of 1000 rmp driven by the rotating shaft. The setting of the compensation intake channel 130 also refers to Figure 6 and Figure 12 As shown, three compensation intake channels 130 are arranged along the same radial direction of the central part 110 of the main body of the gas injection device 100. The first compensation intake channel 131 is arranged at the central position of the main body part 110, the second compensation intake channel 132 is arranged on the circumference 70 mm away from the central position of the main body part, and the third compensation intake channel 133 is arranged on the circumference 140 mm away from the central position of the main body part. In this example, the setting of the compensation gas supply channel 600 is as Figure 11 shown, which is the same as the setting in Example Five.

[0107] In this embodiment, the above-mentioned first compensation intake air channel, second compensation intake air channel and third compensation intake air channel are independently designed without interference. At the same time, detection devices are arranged in the process intake air channels closest to the first compensation intake air channel, second compensation intake air channel and third compensation intake air channel respectively to detect the reflectivity of the AlN material layer in the corresponding areas, and then detect the real-time growth rate of the AlN material layer. In addition, a detection device is arranged at a position 210 mm away from the center of the main body part as the fourth growth rate test point in addition to the detection devices used in the process intake air channels closest to the first compensation intake air channel, second compensation intake air channel and third compensation intake air channel respectively to detect the reflectivity of the AlN material layer in the corresponding areas, and then detect the real-time growth rate of the AlN material layer.

[0108] In this embodiment, trimethylaluminum source of 500 ml / min is introduced through the first process intake air channel 121, and ammonia of 5 L / min and hydrogen of 70 L / min are introduced through the second process intake air channel 122. That is, in this embodiment, M O = 500 ml / min, M H = 75 L / min. Without gas compensation, during the growth process of the AlN material layer, the following data are detected by each detection device: the growth rate of the AlN material layer in the inner circle corresponding to the center position of the main body part is 1.8 μm / h, the growth rate of the AlN material layer in the middle circle corresponding to the process intake air channel closest to the second compensation intake air channel 132 is 1.9 μm / h, the growth rate of the AlN material layer in the outer circle corresponding to the process intake air channel closest to the third compensation intake air channel 133 is 2 μm / h, and the growth rate of the fourth growth rate test point is 2 μm / h.

[0109] It can be seen that the growth rate of the AlN material layer at the edge of the carrier device 200 corresponding to the edge of the main body part closer to the gas injection device is greater than the growth rate of the AlN material layer in the middle area of the carrier device 200 corresponding to the center position of the main body part closer to the gas injection device, that is, V M-1 < V M . Therefore, it can be judged that during the growth process of the AlN material layer, the first source gas needs to be compensated. Therefore, according to the compensation formula M M-1 = α((V M / V M-1 ) - 1)Mo, where α = 0.8, calculate the flow rate of the first source gas to be compensated. Since the growth rate of the outer circle is the largest, in this embodiment, the inner circle and the outer circle, and the middle circle and the outer circle are used as the calculation bases respectively. That is, when calculating the flow rate of the first source gas introduced through the first compensation intake air channel 131, V M 、V M-1Correspond to the growth rates of the outer and inner rings respectively; when calculating the flow rate of the first source gas introduced into the second compensation intake channel 132, V M and V M-1 Correspond to the growth rates of the outer and middle rings respectively. It is calculated that 44 ml / min of trimethylaluminum needs to be introduced into the first compensation intake channel 131, and 22 ml / min of trimethylaluminum needs to be introduced into the second compensation intake channel 132. Since the growth rates of the AlN material layers of the outer rings corresponding to the third and fourth compensation intake channels are the same, the third compensation intake channel 133 does not require trimethylaluminum compensation. None of the above three compensation intake channels 130 are compensated with hydride gas. The continuous growth time is 3 hours, and the average thickness of the AlN material layer measured at each test point is 6 microns, achieving the uniformity of the thickness of the AlN material layer.

[0110] Example 7 In this example, a GaAs material is grown using the MOCVD equipment of Example 1, and the differences are as follows: In this example, the diameter D of the carrier device of the manufacturing equipment 10 is 800 mm, and the vertical distance H from the gas outlet of the gas injection device 100 to the bearing surface of the carrier device 200 is 5 mm. The reaction temperature in the control cavity 104 is controlled at 700 °C, the reaction pressure is 100 mbar, and the carrier device 200 rotates at a speed of 1000 rmp driven by the rotating shaft. The setting of the compensation intake channel 130 also refers to Figure 6 and Figure 12 As shown, three compensation intake channels 130 are arranged along the same radial direction of the main body 110 of the gas injection device 100 from the central position of the main body 110 of the gas injection device 100. The first compensation intake channel 131 is arranged at the central position of the main body 110, the second compensation intake channel 132 is arranged on the circumference 100 mm away from the central position of the main body, and the third compensation intake channel 133 is arranged on the circumference 200 mm away from the central position of the main body. In addition, a detection device is arranged 300 mm away from the central position of the main body, as the fourth growth rate test point in addition to the detection devices used for the process intake channels closest to the first compensation intake channel, the second compensation intake channel, and the third compensation intake channel respectively, to detect the reflectivity of the outermost GaAs material layer corresponding to it, and then detect the real-time growth rate of the GaAs material layer. In this example, the setting of the compensation gas supply channel 600 is as Figure 12 shown, which is the same as the setting in Example 5.

[0111] In this example, 200 ml / min of trimethylgallium source is introduced through the first process intake channel 121, and 500 ml / min of arsenic source (such as arsine) and 150 l / min of hydrogen are introduced through the second process intake channel 122. That is, in this example, M O= 200 mL / min, M H = 150.5 L / min. Without gas compensation, during the growth process of the GaAs material layer, the growth rate of the inner circle detected by the detection device is 1.8 μm / h, the growth rate of the middle circle is 1.9 μm / h, the growth rate of the outer circle is 1.9 μm / h, and the growth rate of the outermost circle is 2.0 μm / h.

[0112] It can be seen that overall, the growth rate of the GaAs material layer in the inner circle of the substrate is less than that of the GaAs material layer in the outer circle, that is, V M-1 <V M , from which it can be judged that during the growth process of the GaAs material layer, the first source gas needs to be compensated. Therefore, according to the compensation formula M M-1 = α((V M / V M-1 ) - 1)Mo, where α = 0.9, calculate the flow rate of the first source gas to be compensated. Since the growth rate of the outermost circle is the largest and there are differences with the middle circle, outer circle, and inner circle directly, in this embodiment, the outermost circle and the outer circle, the outermost circle and the middle circle are used as the calculation bases respectively. That is, when calculating the flow rate of the metal organic compound source introduced into the first compensation intake channel 131, V M , V M-1 correspond to the growth rates of the outermost circle and the inner circle respectively; when calculating the flow rate of the metal organic compound source introduced into the second compensation intake channel 132, V M , V M-1 correspond to the growth rates of the outermost circle and the middle circle respectively. It is calculated that 18 mL / min of trimethylgallium source needs to be introduced into the first compensation intake channel 131, 9 mL / min of trimethylgallium source needs to be introduced into the second compensation intake channel 132. Since the growth rates of the GaAs material layers in the inner circle and the outer circle are the same, 9 mL / min of trimethylgallium source is also introduced into the third compensation intake channel 133.

[0113] 18 ml / min of trimethylgallium, a metal-organic compound source gas, is introduced into the compensation intake channel through the first compensation branch pipeline 600-1 of the first compensation gas supply channel 601, while the second compensation branch pipeline 600-2 for compensating hydride gas does not perform gas compensation. 9 ml / min of trimethylgallium, a metal-organic compound source gas, is introduced into the compensation intake channel through the first compensation branch pipeline 600-1 of the second compensation gas supply channel 602, while the second compensation branch pipeline 600-2 for compensating hydride gas does not perform gas compensation. 9 ml / min of trimethylgallium, a metal-organic compound source gas, is introduced into the compensation intake channel through the first compensation branch pipeline 600-1 of the third compensation gas supply channel 603, while the second compensation branch pipeline 600-2 for compensating hydride gas does not perform gas compensation. After automatic modulation by the system, during the growth process of the GaAs material layer, the inner ring growth rate detected by the detection device is 3.2 μm / h, the middle ring growth rate is 3.2 μm / h, and the outer ring and the outermost ring growth rates are both 3.2 μm / h. The continuous growth time is 2 hours. The average thickness of the inner ring of the GaAs material layer is 6.4 μm, the middle ring is 6.4 μm, the outer ring and the outermost ring are 6.4 μm. The thickness of the inner and outer rings is consistent, achieving the uniformity of the thickness of the GaN material layer. At the same time, within the same growth time, the growth rate of the GaN material layer is increased, that is, while ensuring the thickness uniformity of the material layer, the growth rate of the material layer is increased.

[0114] Example VIII In this example, the MOCVD equipment of Example I is used to grow GaN materials, with the difference that: In this example, the diameter D of the carrier device 200 is 800 mm, and the vertical distance H from the gas outlet of the gas injection device 100 to the carrier surface of the carrier device 200 is 80 mm. The carrier device 200 is controlled to rotate at a speed of 200 rmp driven by the rotating shaft. In this example, the setting of the process intake channel 120 is the same as Figure 3 shown. The gas injection device 100 is provided with a compensation intake channel 130, and this compensation intake channel 130 is arranged at the central position of the gas injection device 100.

[0115] In this example, 400 ml / min of trimethylgallium source is introduced through the first process intake channel 121, and 50 L / min of ammonia gas and 200 L / min of hydrogen gas are introduced through the second process intake channel 122. That is, in this example, M O = 400 ml / min, M H = 250 L / min. Without gas compensation, the growth rate of the GaN material layer in the inner ring is 2.5 μm / h, and the growth rate of the outer ring is 2.91 μm / h.

[0116] As described above, without any gas compensation, the growth rate of the GaN material layer in the inner circle of the substrate is less than that of the GaN material layer in the outer circle (i.e., V M-1 < V M ). Thus, it can be judged that during the growth of the GaN material layer, the first source gas needs to be compensated. Therefore, according to the compensation formula M M-1 =α((V M / V M-1 ) - 1)Mo, where α = 1, V M and V M-1 respectively correspond to the above-mentioned outer circle growth rate and inner circle growth rate, and the required gas flow rate M M-1 = 66 ml / min is calculated.

[0117] Control the corresponding first compensation branch pipeline 600-1 to open to introduce trimethylgallium, a metal organic compound source gas, into the compensation intake channel at a rate of 80 ml / min, while the second compensation branch pipeline 600-2, which is the hydride gas compensation channel, does not perform gas compensation. The growth time continues for 2 hours, and the average thickness of the inner circle of the GaN material is measured to be 5.5 μm, and that of the outer circle is 5.5 μm, achieving the thickness uniformity of the GaN material layer.

[0118] The above embodiments are only illustrative of the principles and effects of the present invention, and are not used to limit the present invention. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical ideas disclosed by the present invention should still be covered by the claims of the present invention.

Claims

1. A method for manufacturing a compound semiconductor, characterized in that, Comprising: Providing a manufacturing apparatus for the compound semiconductor, the manufacturing apparatus for the compound semiconductor being provided with a detection device and a gas injection device, the gas injection device including respective gas inlet channels composed of a plurality of process gas inlet channels and at least one compensation gas inlet channel, each of the compensation gas inlet channels being disposed in a region where the plurality of process gas inlet channels are located, and in at least one of the compensation gas inlet channels, one of the compensation gas inlet channels being located at the center of the gas injection device; Placing a substrate into the manufacturing apparatus; Control the reaction temperature and reaction pressure inside the manufacturing equipment, control the rotation of the substrate, and supply a first source gas containing group III elements with a flow rate of M and a second source gas containing group V elements with a flow rate of M through each of the process gas inlet channels to perform a semiconductor epitaxial layer growth process on the substrate; O and a second source gas containing group V elements with a flow rate of M H to perform a semiconductor epitaxial layer growth process on the substrate; During the growth process, using the detection device to obtain respective growth rates of the semiconductor material layer in different regions in the radial direction of the substrate; During the growth process, determining whether to introduce a compensation gas through at least one of the compensation gas inlet channels to perform gas compensation processing synchronously according to the respective growth rates, the compensation gas being the first source gas or the second source gas.

2. The method for manufacturing a compound semiconductor according to claim 1, characterized in that, The number of the compensation gas inlet channels is N. When N is 1, the compensation gas inlet channel is located at the center of the gas injection device. When N is a natural number greater than 1, each of the compensation gas inlet channels is arranged radially along the gas injection device starting from the center of the gas injection device.

3. The method for manufacturing a compound semiconductor according to claim 2, characterized in that, N is a natural number greater than 1. During the growth process, the step of using the detection device to obtain respective growth rates of the semiconductor material layer in different regions in the radial direction of the substrate includes: Obtain the material growth rate V of the substrate region corresponding to the (M - 1)-th compensation intake channel on the semiconductor material layer by using the detection device M-1 , and obtain the material growth rate V of the substrate region corresponding to the M-th compensation intake channel adjacent to the (M - 1)-th compensation intake channel M , the substrate region corresponding to the (M - 1)-th compensation intake channel is closer to the center of the substrate than the substrate region corresponding to the M-th compensation intake channel, and M is a positive integer greater than or equal to 2 and less than or equal to N; According to V M-1 and V M determine the type and flow rate of the compensation gas introduced from the (M - 1)-th compensation intake passage according to the magnitude relationship between them.

4. The method for manufacturing a compound semiconductor according to claim 3, characterized in that, According to V M-1 and V M The steps of determining the type and flow rate of the compensation gas introduced from the (M-1)th compensation intake passage according to the magnitude relationship include: Determine V M-1 > V M After that, introduce the second source gas into the (M - 1)-th compensation intake channel and control the flow rate to be M M-1 = γ(1 - (V M / V M-1 ))M H ; Wherein, γ is a compensation coefficient, γ = 0.8 to 1.

2.

5. The method for manufacturing a compound semiconductor according to claim 3, characterized in that, According to V M-1 and V M The steps of determining the type and flow rate of the compensation gas introduced from the (M-1)th compensation intake passage according to the magnitude relationship include: Determine V M-1 <V M After that, introduce the first source gas into the (M - 1)-th compensation intake passage and control the flow rate to be M M-1 =α((V M / V M-1 ) - 1)M O ; Wherein, α is a compensation coefficient, α = 0.8 to 1.

2.

6. The method for manufacturing a compound semiconductor according to claim 2, characterized in that, When N is a natural number greater than 1, the step of determining whether to introduce a compensation gas through at least one of the compensation gas inlet channels to perform gas compensation processing synchronously according to the respective growth rates includes: Introducing the compensation gas from each of the compensation gas inlet channels, and controlling that in two adjacent compensation gas inlet channels, the flow rate of the compensation gas provided by the compensation gas inlet channel closer to the center of the gas injection device is greater than or equal to the flow rate of the compensation gas provided by the other compensation gas inlet channel.

7. The method for manufacturing a compound semiconductor according to claim 1, characterized in that, Controlling the ratio between the flow rate of the first source gas introduced through each of the process gas inlet channels and the flow rate of the first source gas introduced through each of the compensation gas inlet channels, and controlling the ratio between the flow rate of the second source gas introduced through each of the process gas inlet channels and the flow rate of the second source gas introduced through each of the compensation gas inlet channels to be 5:1 to 50:

1.

8. The method for manufacturing a compound semiconductor according to claim 7, characterized in that, The flow rate of the first source gas or the second source gas introduced through each of the compensation gas inlet channels is 1 to 70 milliliters per minute.

9. The method for manufacturing a compound semiconductor according to claim 1, characterized in that, In the growth process, the flow rate M of the second source gas is controlled H and the flow rate M of the first source gas O The ratio M of H :M O is 30:1 to 5000:1, the reaction temperature is 700 to 1200 degrees Celsius, and the reaction pressure is 50 to 100 mbar.

10. The method for manufacturing a compound semiconductor according to claim 9, characterized in that, In the growth process, the flow rate M of the first source gas is controlled O to be 50 to 500 milliliters per minute.

11. The method for manufacturing a compound semiconductor according to claim 10, characterized in that, The second source gas includes hydrogen and a source gas containing a group-V hydride. During the growth process, the flow rate of the source gas containing the group-V hydride provided through each of the process gas inlet channels is 0.5 to 50 liters per minute, and the flow rate of hydrogen is 10 to 200 liters per minute.

12. The method for manufacturing a compound semiconductor according to claim 1, characterized in that, During the growth process, controlling the substrate to rotate around the axis of the carrier device carrying the substrate at a rate of 10 to 1200 rpm.

13. The manufacturing method of the compound semiconductor according to claim 1, wherein, The first source gas contains a gallium source or an aluminum source, and the second source gas contains a nitrogen source or an arsenic source.

14. A manufacturing apparatus for a compound semiconductor, wherein, Comprising: A gas injection device and a carrier device, the gas injection device being disposed opposite to the carrier device to supply a process gas for growing a semiconductor material layer to a substrate carried on the carrier device; the gas injection device includes each intake air passage composed of a plurality of process intake air passages and at least one compensation intake air passage, each of the compensation intake air passages being disposed in the area where the plurality of process intake air passages are located, and in at least one of the compensation intake air passages, one of the compensation intake air passages is located at the center of the gas injection device; A detection device for obtaining the growth rates of the semiconductor material layer in different regions in the radial direction of the substrate.

15. The manufacturing apparatus for a compound semiconductor according to claim 14, wherein, There are at least three of the compensation intake air passages arranged in the same radial direction of the gas injection device, and there is the same spacing distance between adjacent compensation intake air passages.

16. The manufacturing apparatus for a compound semiconductor according to claim 14, wherein, There are at least two of the compensation intake air passages arranged in the same radial direction of the gas injection device, the distance between adjacent compensation intake air passages is L1, the diameter of the carrier device is D, the distance from the bottom surface of the gas injection device to the top surface of the substrate is H, the ratio of D to L1 is 1.5:1 to 16:1, and the ratio of D to H is 1.875:1 to 160:

1.

17. The manufacturing apparatus for a compound semiconductor according to claim 16, wherein, L1 is 50 to 100 millimeters, and H is 5 to 80 millimeters.

18. The manufacturing apparatus for a compound semiconductor according to claim 14, wherein, The number of the compensation intake air passages is N. When N is 1, the compensation intake air passage is located at the center of the gas injection device. When N is a natural number greater than 1, each of the compensation intake air passages is arranged radially along the gas injection device from the center of the gas injection device.

19. The manufacturing apparatus for a compound semiconductor according to claim 18, wherein, N is a positive integer greater than or equal to 2 and less than or equal to 4.

Images