A method and apparatus for manufacturing a compound semiconductor

Abstract

The present invention provides a method and equipment for manufacturing compound semiconductors. The gas injection device of the manufacturing equipment is provided with several process gas inlet channels and at least one compensation gas inlet channel. During the growth process of a semiconductor material layer, a detection device is used to obtain the growth rates of different regions of the semiconductor material layer. Based on the growth rates, it is determined whether to introduce compensation gas through at least one compensation gas inlet channel to synchronously perform gas compensation processing to replenish the first source gas and / or second source gas required for the growth of the semiconductor material layer. In this way, the corresponding source gas can be replenished immediately to address any non-uniformity of the semiconductor material layer that occurs during the growth process, thereby reducing or even eliminating the growth non-uniformity of the material layer, achieving uniform quality and thickness of the semiconductor material layer within the same substrate, between substrates, and between different circumferences in the radial direction of the substrate, thereby improving the consistency and yield of the semiconductor material.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor material preparation and processing, and in particular to a method and equipment for manufacturing compound semiconductors. Background Art

[0002] High-temperature, high-frequency, radiation-resistant and high-power semiconductor devices have important application prospects in the fields of communications, solar energy, semiconductor lighting, smart grids, etc. The manufacturing process of such semiconductor devices, such as manufacturing on heterogeneous substrates such as sapphire, silicon carbide, and silicon, is to introduce reactants by gas to establish a flow field in the reaction chamber, and the reactants grow a specific semiconductor material layer on the surface of the substrate. Figure 1 As shown, compound semiconductor epitaxial layers 18 must first be grown on substrate 300. For example, a buffer layer 12 is grown to create a defect-free, low-stress interface. Then, an active region carrier 13, electron injection layer 14, active region 15, hole injection layer 16, and ohmic contact layer 17 containing the compound semiconductor are grown on the buffer layer. The growth process for each layer significantly impacts the quality of the finished semiconductor device. For example, the buffer layer process is designed to minimize lattice mismatch and stress between the substrate and the buffer layer through process control, thereby facilitating the growth of high-quality subsequent layers.

[0003] The thickness uniformity of the semiconductor material layer will also directly affect the performance of the semiconductor device. In the actual material growth process, due to changes in the delivery rate, viscosity coefficient, pre-reaction, etc. of each source material, the material thickness on the substrate at different radial and circumferential locations of the carrier device will be inconsistent when growing the semiconductor material layer. In severe cases, it will cause obvious problems in the uniformity of the material layer within the same substrate, so that cumbersome process adjustments including airflow adjustments need to be made to the process, which is not conducive to improving production efficiency. Summary of the Invention

[0004] The present invention provides a method for manufacturing a compound semiconductor, which is beneficial to improving the uniformity of a semiconductor material layer.

[0005] To achieve the above object, one embodiment of the present invention provides a method for manufacturing a compound semiconductor, the method comprising the following steps:

[0006] Providing the compound semiconductor manufacturing equipment, the compound semiconductor manufacturing equipment is equipped with a detection device, in which a substrate is placed, the gas injection device includes gas inlet channels consisting of a plurality of process gas inlet channels and at least one compensation gas inlet channel, each of the compensation gas inlet channels is arranged in the area where the plurality of process gas inlet channels are located, and at least one of the compensation gas inlet channels is located at the center of the gas injection device;

[0007] placing a substrate into the manufacturing equipment;

[0008] Control the reaction temperature and reaction pressure in the manufacturing equipment, control the rotation of the substrate, and provide a flow rate of M to the substrate through each process air inlet channel. O The first source gas containing group III elements and the flow rate are M H a second source gas containing a Group V element to perform a growth process of a semiconductor material layer on the substrate;

[0009] During the growth process, the detection device is used to obtain the growth rates of the semiconductor material layer in different regions in the radial direction of the substrate;

[0010] During the growth process, it is determined whether to introduce compensation gas through at least one compensation gas inlet channel to synchronously perform gas compensation processing according to each growth rate, and the compensation gas is the first source gas or the second source gas.

[0011] The beneficial effect of the compound semiconductor manufacturing method of the present invention is that the gas injection device is provided with gas inlet channels consisting of a plurality of process gas inlet channels and at least one compensation gas inlet channel. During the growth process of the semiconductor material layer, the growth rates of different regions of the semiconductor material layer are obtained by a detection device, and it is determined based on the growth rate whether to introduce compensation gas through at least one compensation gas inlet channel to synchronously perform gas compensation processing to replenish the first source gas or the second source gas required for the growth of the semiconductor material layer. In this way, the corresponding source gas can be replenished immediately in response to the non-uniformity of the semiconductor material layer that occurs during the growth process, thereby reducing or even eliminating the growth non-uniformity of the material layer, achieving uniform quality and thickness of the semiconductor material layer within the same substrate, between substrates, and between different circumferences in the radial direction of the substrate, and improving the consistency and yield of the semiconductor material.

[0012] In addition, by setting a compensating air inlet channel in the gas injection device, the manufacturing equipment equipped with the gas injection device can be suitable for the growth of different material systems, solving the problem of poor uniformity caused by switching different source gases during the growth of different material systems, and solving the problem of poor growth uniformity of multi-compound materials caused by different performances such as migration efficiency and pre-reaction of different source materials, thereby improving the growth compatibility of the material growth system.

[0013] The opening and closing of each compensation gas inlet channel, as well as the type and amount of source material gas introduced, can be set manually or controlled in real time by a compensation control device based on the material layer growth parameters fed back by the detection device. By adjusting the growth parameters in real time based on the real-time material growth parameters, the probability of anomalies during the material growth process can be reduced or eliminated.

[0014] Optionally, the number of the compensating air intake channels is N. When N is 1, the compensating air intake channels are located at the center of the gas injection device. When N is a natural number greater than 1, each of the compensating air intake channels is arranged radially along the gas injection device starting from the center of the gas injection device.

[0015] Optionally, N is a natural number greater than 1, and during the growth process, the step of using the detection device to obtain the growth rates of different regions of the semiconductor material layer in the radial direction of the substrate includes:

[0016] The detection device is used to obtain the material growth rate V of the substrate area corresponding to the M-1th compensation inlet channel on the semiconductor material layer. M-1 , and obtaining the material growth rate V of the substrate region corresponding to the Mth compensation inlet channel adjacent to the M-1th compensation inlet channel M , M is a positive integer greater than or equal to 2 and less than or equal to N, the substrate region corresponding to the M-1th compensating air inlet channel is closer to the center of the substrate than the substrate region corresponding to the Mth compensating air inlet channel, and M is a positive integer greater than or equal to 2 and less than or equal to N;

[0017] According to V M-1 and V M The size relationship determines the type and flow rate of the compensation gas introduced from the M-1th compensation air inlet channel.

[0018] Optionally, according to V M-1 and V M The step of determining the type and flow rate of the compensation gas introduced from the M-1th compensation air inlet channel based on the size relationship of includes:

[0019] Judge V M-1 >V M Then, the second source gas is introduced from the M-1th compensation gas inlet channel, and the flow rate is controlled to M M-1 =γ(1-(V M / V M-1 ))M H ;

[0020] Among them, γ is the compensation coefficient, γ=0.8~1.2.

[0021] Optionally, according to V M-1 and V M The step of determining the type and flow rate of the compensation gas introduced from the M-1th compensation air inlet channel based on the size relationship of includes:

[0022] Judge V M-1 <V MThen, the first source gas is introduced from the M-1th compensation gas inlet channel, and the flow rate is controlled to M M-1 =α((V M / V M-1 )-1)M O ;

[0023] Among them, α is the compensation coefficient, α=0.8~1.2.

[0024] Optionally, when N is a natural number greater than 1, the step of determining whether to introduce compensation gas through at least one of the compensation gas inlet channels to synchronously perform gas compensation processing according to each of the growth rates includes:

[0025] The compensating gas is introduced into each compensating gas inlet channel, and the compensating gas flow provided by the compensating gas inlet channel close to the middle of the gas injection device in two adjacent compensating gas inlet channels is controlled to be greater than or equal to the compensating gas flow provided by the other compensating gas inlet channel.

[0026] Optionally, the ratio between the flow rate of the first source gas passed through each of the process gas inlet channels and the flow rate of the first source gas passed through each of the compensation gas inlet channels is controlled to be 5:1 ~ 50:1, and the ratio between the flow rate of the second source gas passed through each of the process gas inlet channels and the flow rate of the second source gas passed through each of the compensation gas inlet channels is controlled to be 5:1 ~ 50:1.

[0027] Optionally, the flow rate of the first source gas or the second source gas introduced into each of the compensation gas inlet channels is 1-70 ml / min.

[0028] Optionally, the flow rate M of the second source gas is controlled H The flow rate M of the first source gas O M H :M O The reaction temperature is 700-1200 degrees Celsius, and the reaction pressure is 50-100 millibars.

[0029] Optionally, in the growth process, the flow rate M of the first source gas is controlled O 50~500 ml / min.

[0030] Optionally, the second source gas includes hydrogen and a source gas containing Group V hydrides. During the growth process, the flow rate of the source gas containing Group V hydrides provided through each of the process gas inlet channels is 0.5~50 liters / minute, and the flow rate of hydrogen is 10~200 liters / minute.

[0031] Optionally, during the growth process, the substrate is controlled to rotate at a rate of 10 to 1200 rpm around an axis of a carrying device that carries the substrate.

[0032] Optionally, the first source gas contains a gallium source or an aluminum source, and the second source gas contains a nitrogen source or an arsenic source.

[0033] Another embodiment of the present invention provides a compound semiconductor manufacturing apparatus, comprising:

[0034] A gas injection device and a carrier device, wherein the gas injection device is arranged opposite to the carrier device to provide process gas for growing a semiconductor material layer to the substrate carried by the carrier device; the gas injection device includes gas inlet channels consisting of a plurality of process gas inlet channels and at least one compensation gas inlet channel, each of the compensation gas inlet channels is arranged in the area where the plurality of process gas inlet channels are located, and one of the at least one compensation gas inlet channels is located at the center of the gas injection device;

[0035] The detection device is used to obtain the growth rates of the semiconductor material layer in different areas in the radial direction of the substrate.

[0036] Optionally, at least three compensating air inlet channels are arranged in the same radial direction of the gas injection device, and adjacent compensating air inlet channels have the same spacing distance.

[0037] Optionally, at least two of the compensating air inlet channels are arranged in the same radial direction of the gas injection device, the distance between adjacent compensating air inlet channels is L1, the diameter of the supporting device is D, the distance between the bottom surface of the gas injection device and the top surface of the substrate is H, the ratio of D to L1 is 1.5:1~16:1, and the ratio of D to H is 1.875:1~160:1.

[0038] Optionally, L1 is 50-100 mm, and H is 5-80 mm.

[0039] Optionally, the number of the compensating air intake channels is N. When N is 1, the compensating air intake channels are located at the center of the gas injection device. When N is a natural number greater than 1, each of the compensating air intake channels is arranged radially along the gas injection device starting from the center of the gas injection device.

[0040] Optionally, N is a positive integer greater than or equal to 2 and less than or equal to 4. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] Figure 1 Shown is a schematic structural diagram of a semiconductor device.

[0042] Figure 2 Shown is a schematic diagram of the distribution structure of the process gas inlet channel and the compensation gas inlet channel in the gas injection device in the compound semiconductor manufacturing equipment provided by the present invention.

[0043] Figure 3 Display as Figure 2 Schematic diagram of the distribution of the process gas inlet channel of the gas injection device shown.

[0044] Figure 4 Shown is a schematic diagram of the distribution of process gas inlet channels of a gas injection device in an optional embodiment.

[0045] Figure 5 Shown is a schematic diagram of the distribution of process gas inlet channels and compensation gas inlet channels of a gas injection device in an optional embodiment.

[0046] Figure 6 Schematic diagram showing the distribution of the compensation inlet channel of the gas injection device in some embodiments Figure 1 .

[0047] Figure 7 Schematic diagram showing the distribution of the compensation inlet channel of the gas injection device in some embodiments Figure 2 .

[0048] Figure 8 Schematic diagram showing the distribution of the compensation inlet channel of the gas injection device in some embodiments Figure 3 .

[0049] Figure 9 Shown is a schematic structural diagram of the manufacturing equipment provided by the present invention.

[0050] Figure 10 Display as Figure 9 A schematic structural diagram of the carrying device of the manufacturing equipment shown.

[0051] Figure 11 Shown is a schematic diagram of the structure of the gas injection device and the compensation gas supply channel in some embodiments Figure 1 .

[0052] Figure 12 Shown is a schematic diagram of the structure of the gas injection device and the compensation gas supply channel in some embodiments Figure 2 .

[0053] Figure 13 Shown is a schematic diagram of the structure of the gas injection device and the compensation gas supply channel in some embodiments Figure 3 .

[0054] Figure 14 Shown is a schematic diagram of the functional modules in the manufacturing equipment.

[0055] Component designator list:

[0056] 10. Manufacturing equipment; 12. Buffer layer; 13. Active area carrier; 14. Electron injection layer; 15. Active area; 16. Hole injection layer; 17. Ohmic contact layer; 18. Epitaxial layer; 100. Gas injection device; 101. First gas cavity; 102. Second gas cavity; 104. Cavity; 110. Main body; 111. Top; 112. Bottom; 120. Process gas inlet channel; 121. First process gas inlet channel; 122. Second process gas inlet channel; 130. Compensating gas inlet channel; 131. First compensating gas inlet channel; 132. Second compensating gas inlet channel; 1321. Second compensating gas inlet channel 1; 1322. Second compensating gas inlet channel 2; 133, third compensating gas inlet channel; 13N, Nth compensating gas inlet channel; 200, carrying device; 201, carrier area; 300, substrate; 400, rotating device; 500, process gas supply channel; 501, first process gas supply channel; 502, second process gas supply channel; 600, compensating gas supply channel; 6000, main line; 601, first compensating gas supply channel; 602, second compensating gas supply channel; 603, third compensating gas supply channel; 600-1, first compensating branch pipeline; 600-2, second compensating branch pipeline; 6001, first gas outlet branch pipeline; 6002, second gas outlet branch pipeline; 6003, third gas outlet branch pipeline. DETAILED DESCRIPTION

[0057] The following describes the embodiments of the present invention through specific examples. Those skilled in the art will readily understand the other advantages and benefits of the present invention from the disclosure herein. The present invention may also be implemented or applied through various other specific embodiments, and the details in this specification may be modified or altered based on different viewpoints and applications without departing from the spirit of the present invention.

[0058] The present invention provides a method and equipment for manufacturing a compound semiconductor, wherein the method comprises the following steps:

[0059] Providing the compound semiconductor manufacturing equipment, the compound semiconductor manufacturing equipment is equipped with a detection device, including a gas injection device, the gas injection device includes a plurality of process gas inlet channels and at least one compensation gas inlet channel, each of the compensation gas inlet channels is arranged in the area where the plurality of process gas inlet channels are located, and one of the at least one compensation gas inlet channels is located at the center of the gas injection device;

[0060] placing a substrate into the manufacturing equipment;

[0061] After the reaction temperature and reaction pressure are reached in the manufacturing equipment, the substrate is controlled to rotate, and a flow rate of M is introduced into the manufacturing equipment through each process air inlet channel. OThe first source gas containing group III elements and the flow rate are M H a second source gas containing a Group V element to perform a growth process of a semiconductor material layer on the substrate;

[0062] During the growth process, the detection device is used to obtain the growth rates of the semiconductor material layer in different regions in the radial direction of the substrate;

[0063] During the growth process, it is determined whether to introduce compensation gas through at least one compensation gas inlet channel to synchronously perform gas compensation processing according to each growth rate, and the compensation gas is the first source gas or the second source gas.

[0064] In an optional embodiment, the number of the compensating air inlet channels is N, where N is a natural number greater than 1. During the growth process, the step of using the detection device to obtain the growth rates of different regions of the semiconductor material layer in the radial direction of the substrate includes:

[0065] The detection device is used to obtain the material growth rate V of the substrate area corresponding to the M-1th compensation inlet channel on the semiconductor material layer. M-1 , and obtaining the material growth rate V of the substrate region corresponding to the Mth compensation inlet channel adjacent to the M-1th compensation inlet channel M , the M-1th compensating air inlet channel is closer to the center of the gas injection device than the Mth compensating air inlet channel, where M is a positive integer greater than or equal to 2 and less than or equal to N;

[0066] According to V M-1 and V M The size relationship determines the type and flow rate of the compensation gas introduced from the M-1th compensation air inlet channel.

[0067] Specifically: Determine V M-1 >V M Then, the second source gas is introduced from the M-1th compensation gas inlet channel, and the flow rate is controlled to M M-1 =γ(1-(V M / V M-1 ))M H ;

[0068] Among them, γ is the compensation coefficient, γ=0.8~1.2.

[0069] Judge V M-1 <V M Then, the first source gas is introduced from the M-1th compensation gas inlet channel, and the flow rate is controlled to M M-1 =α((V M / V M-1 )-1)Mo;

[0070] Among them, α is the compensation coefficient, α=0.8~1.2.

[0071] In an optional embodiment, when N is a natural number greater than 1, the step of determining whether to introduce compensation gas through at least one of the compensation gas inlet channels to synchronously perform gas compensation processing according to each of the growth rates includes:

[0072] The compensating gas is introduced into each compensating gas inlet channel, and the compensating gas flow rate provided by the compensating gas inlet channel close to the center of the gas injection device in two adjacent compensating gas inlet channels is controlled to be greater than or equal to the compensating gas flow rate provided by the other compensating gas inlet channel.

[0073] As described above, the above-mentioned compound semiconductor manufacturing method of the present invention first provides compound semiconductor manufacturing equipment. The manufacturing equipment provided by the present invention is equipped with a detection device. Specifically, the manufacturing equipment can be a chemical vapor deposition (CVD) device or a physical vapor deposition (PVD) device. The vapor deposition equipment can be a plasma-enhanced chemical vapor deposition (PECVD) device, a metal-organic chemical vapor deposition (MOCVD) device, etc. This embodiment is described using MOCVD equipment as an example. It should be understood that this equipment is merely exemplary, and the compound semiconductor manufacturing equipment provided by the present invention is not limited to this type.

[0074] Combine Figure 9 The manufacturing device 10 has a cavity 104, the cross section of which is generally circular or quasi-circular, or can be rectangular or other structures well known to those skilled in the art, which will not be described in detail here. Figure 8 As shown, in this embodiment, the manufacturing equipment 10 includes a gas injection device 100, which is disposed at the top of a cavity 104. The gas injection device 100 includes a body 110, which is disposed at the top of the cavity 104 and forms a closed space with the cavity 104 and the carrier 200 in the cavity 104, and the closed space forms a reaction space.

[0075] like Figure 2As shown, the gas injection device 100 of the manufacturing equipment 10 includes a main body 110, a process gas inlet channel 120 and a compensation gas inlet channel 130. The process gas inlet channel 120 is used to provide process gas. Specifically, the process gas inlet channel 120 provides a flow rate of M O The first source gas containing group III elements and the flow rate are M H The compensation gas inlet channel 130 is used to provide compensation gas, which is the first source gas or the second source gas mentioned above.

[0076] like Figure 2 As shown, the main body 110 is a solid structure with a certain thickness and has a top 111 and a bottom 112 arranged opposite each other. A process gas inlet channel 120 penetrates the main body 110 from the top 111 to the bottom 112 and supplies process gas in a direction from the top 111 to the bottom 112. The gas outlet of the process gas inlet channel 120 is located on the side of the bottom 112 of the main body 110. The process gas contains source material gas that undergoes a chemical reaction to form a single crystal thin film. For example, when growing GaN, AlN, or GaAs material layers, the process gas includes a first source gas (metal organic compound source and hydride gas) containing a gallium source or an aluminum source, and a second source gas containing a nitrogen source or an arsenic source, as well as hydrogen gas required for material layer growth. The first source gas and the second source gas can both be a mixture of multiple gases, such as a mixture of a carrier gas and a reaction gas, or a mixture of multiple reaction gases of the same type.

[0077] During the growth process, the reaction temperature is controlled to be 700-1200 degrees Celsius, the reaction pressure is controlled to be 50-100 millibars, and the flow rate of the second source gas is controlled to be M. H The flow rate of the first source gas M O M H :M O The ratio of the first source gas to the argon gas is 30:1 to 5000:1. O The flow rate of the second source gas is 50~500 ml / min. His 15 to 250 liters / minute. In an optional embodiment, the second source gas includes hydrogen and a source gas containing a Group V hydride. During the growth process, the flow rate of the source gas containing the Group V hydride provided through each process gas inlet channel is 0.5 to 50 liters / minute, and the flow rate of hydrogen is 10 to 200 liters / minute. When performing gas compensation processing, the ratio between the flow rate of the first source gas introduced through each process gas inlet channel 120 and the flow rate of the first source gas introduced through each compensation gas inlet channel is controlled, and the ratio between the flow rate of the second source gas introduced through each process gas inlet channel and the flow rate of the second source gas introduced through each compensation gas inlet channel 130 is controlled to be 5:1 to 50:1. Furthermore, the flow rate of the first source gas or the second source gas introduced into each compensation gas inlet channel is 1 to 70 milliliters / minute.

[0078] The process air inlet channels 120 are evenly distributed in the main body 110 and can be formed into a hole-type structure or a slit-type structure. Figure 2 As shown, the process gas inlet channels 120 are formed as circular hole structures and are evenly distributed in the body portion 110 . Figure 2 The process gas inlet channel 120 shown is formed into a circular hole structure with different pore diameters. It can be understood that the process gas inlet channel 120 can be set to different types according to different types of source material gases provided.

[0079] Taking the growth of GaN material layer and / or AlN material layer as an example, the process gas inlet channel 120 includes a first process gas inlet channel 121 and a second process gas inlet channel 122 for providing a metal organic compound source and a hydride gas, respectively. Figure 2 As shown, the first process gas inlet channel 121 with a larger pore size is used as a gas supply channel for the metal organic compound source, and the second process gas inlet channel 122 with a smaller pore size is used as a gas supply channel for the hydride gas. The first process gas inlet channel 121 and the second process gas inlet channel 122 can be staggered and evenly distributed in a manner to form an air curtain, or they can be dispersed. For example Figure 3 The first process air inlet channel 121 and the second process air inlet channel 122 are arranged in a straight line and staggered to form multiple rows. Alternatively, as shown in FIG. Figure 4 As shown, the first process air inlet channel 121 and the second process air inlet channel 122 are arranged alternately along different radii of the main body 110 .

[0080] It is understood that in order to avoid unnecessary mixing or reaction of the source material gases before entering the reaction space, the process gas inlet channels 120 of different source material gases are not connected to each other. Figure 2As shown, a first air cavity 101 communicating with the first process air inlet channels 121 can be formed in the body portion 110. This first air cavity 101 is located in a radial plane of the body portion 110 and connects all of the first process air inlet channels 121. Simultaneously, a second air cavity 102 is also formed in the body portion 110. This second air cavity 102 is located in another radial plane of the body portion 110 and connects the second process air inlet channels 122, while being independent of the first air cavity 101. This ensures that the first process air inlet channels 121 and the second process air inlet channels 122 are independently fed with air without interfering with each other.

[0081] Refer again Figure 2 In this embodiment, in order to compensate for the unevenness of thickness or growth rate during the growth of the semiconductor material layer, a compensating air inlet channel 130 is provided. The compensating air inlet channel 130 is used to provide compensating gas, and the provided compensating gas can be the above-mentioned first source gas or second source gas. In this embodiment, N compensating air inlet channels 130 are provided in the main body 110, where N is a natural number greater than or equal to 1. The compensating air inlet channel 130 passes through the main body 110 in a direction from the top 111 of the main body 110 to the bottom 112, and the air outlet of the compensating air inlet channel 130 is also located on the side of the bottom 112 of the main body 110. Moreover, any of the compensating air inlet channels 130 and any process air inlet channel 120 are not connected to each other. The above-mentioned compensating air inlet channels 130 are distributed in the area where each process air inlet channel 120 is located, and do not affect the normal air intake of the process air inlet channel 120. In addition, the gas outlets of the process gas inlet channel 120 and the compensation gas inlet channel 130 can be formed at the bottom 112 of the main body 110, or can extend a certain distance from the bottom 112 of the main body 110. Preferably, the gas outlets of each process gas inlet channel 120 and each compensation gas inlet channel 130 are located in the same plane.

[0082] In an alternative embodiment of this embodiment, a compensation air inlet channel 130 is provided in the main body 110, that is, N=1. Figure 5 As shown, the compensation gas inlet channel 130 is disposed in the middle region of the main body 110, and further, in the center of the main body 110. Thus, when the compensation gas is introduced through the compensation gas inlet channel 130, it can be ensured that the compensation gas can be dispersed to different regions of the substrate 300, thereby playing the role of compensating the source material gas.

[0083] In another optional embodiment of this embodiment, a plurality of compensation air inlet channels 130 are provided in the main body 110, that is, N ≥ 2. The N compensation air inlet channels 130 are arranged radially from the center of the main body 110 to the main body 110, that is, the N compensation air inlet channels 130 are distributed in different circumferential directions along the same radial direction of the main body 110. Furthermore, N is a positive integer greater than or equal to 2 and less than or equal to 4. If too many compensation air inlet channels 130 are used, the influence between the airflows passing through adjacent compensation air inlet channels 130 increases, which increases the difficulty of regulation. 2 to 4 compensation air inlet channels 130 are provided, which can reduce the influence between the airflows passing through adjacent compensation air inlet channels 130 and reduce the difficulty of regulation while compensating for the required source gas and achieving uniformity in the growth of the material layer. For example, in some embodiments, there may be two compensation air inlet channels 130, one of which is provided at the center of the main body 110, and the other is provided on the radial circumference of the main body 110. As Figure 5 As shown (for example, Figures 5 to 7 Only the compensation gas inlet channel 130 is shown, and the process gas inlet channel 120 is not shown, wherein the process gas inlet channel 120 also has Figure 2 or Figure 3 (See the arrangement shown in the figure), taking the arrangement of three compensating air inlet channels 130 as an example, the three compensating air inlet channels 130 are located in the same radial direction of the main body 110 and in different circumferential directions of the main body 110. A first compensating air inlet channel 131 is distributed in the central region of the main body 110, a second compensating air inlet channel 132 is distributed on circumference C1, and a third compensating air inlet channel 133 is distributed on circumference C2. Circumferences C1 and C2 are different circumferential directions on the main body 110 with different radii.

[0084] There is a radial distance L1 between two adjacent compensation inlet passages 130 located in different circumferential directions. Figure 9 The diameter of the carrier 200 of the manufacturing device 10 is D. In this embodiment, the ratio of the diameter D of the carrier 200 to the radial distance L1 between two adjacent compensating air inlet channels 130 is 1.5:1 to 16:1. The radial distance between two adjacent compensating air inlet channels 130 is the radius difference between the two circumferences where the two adjacent compensating air inlet channels 130 are located, such as Figure 5 As shown, the radial distance L1 between the second compensating inlet passage 132 and the third compensating inlet passage 133 is the difference between the radius of the circle C2 and the radius of the circle C1.

[0085] Optionally, the radial distances between adjacent compensating air inlet channels 130 are the same, that is, the compensating air inlet channels 130 are uniformly distributed radially along the main body 110. For example, in one embodiment, the diameter D of the carrier 200 of the manufacturing apparatus 10 is 320 mm. The first compensating air inlet channel 131, the second compensating air inlet channel 132, and the third compensating air inlet channel 133 are evenly spaced from the center of the main body 110. Furthermore, the first compensating air inlet channel 131 is located at the center of the main body 110, the second compensating air inlet channel 132 is located on a circle with a radius of 50 mm, and the third compensating air inlet channel 133 is located on a circle with a radius of 100 mm. In other words, the radial distances between the first compensating air inlet channel 131 and the second compensating air inlet channel 132, as well as the radial distances between the second compensating air inlet channel 132 and the third compensating air inlet channel 133, are both 50 mm. In another embodiment, the diameter D of the carrier 200 of the manufacturing apparatus 10 is 600 mm. The first compensating air inlet channel 131, the second compensating air inlet channel 132, and the third compensating air inlet channel 133 are evenly spaced from the middle of the main body 110. The first compensating air inlet channel 131 is located at the center of the main body 110, the second compensating air inlet channel 132 is located on a circle with a radius of 70 mm, and the third compensating air inlet channel 133 is located on a circle with a radius of 140 mm. That is, the radial distance between the first compensating air inlet channel 131 and the second compensating air inlet channel 132, as well as the radial distance between the second compensating air inlet channel 132 and the third compensating air inlet channel 133, is 70 mm. In another embodiment, the diameter D of the carrier 200 of the manufacturing equipment 10 is 800 mm. The first compensating air intake channel 131, the second compensating air intake channel 132 and the third compensating air intake channel 133 are distributed at equal intervals starting from the middle of the main body 110, and the first compensating air intake channel 131 is located at the center of the main body 110, the second compensating air intake channel 132 is located on a circle with a radius of 100 mm, and the third compensating air intake channel 133 is located on a circle with a radius of 200 mm, that is, the radial distance between the first compensating air intake channel 131 and the second compensating air intake channel 132 and the radial distance between the second compensating air intake channel 132 and the third compensating air intake channel 133 are both 100 mm.

[0086] In other embodiments, the radial distances between adjacent compensating air inlet channels 130 are not completely the same. For example, the radial distances between at least two groups of adjacent compensating air inlet channels 130 are equal.

[0087] The above description only takes three compensating air intake channels 130 as an example. It can be understood that more compensating air intake channels 130 can be provided along the same radial direction but in different circumferential directions.

[0088] In another optional embodiment, multiple compensation air inlet channels 130 are also provided, that is, N≥2. Among the N compensation air inlet channels 130, at least two compensation air inlet channels 130 are located on the same circumference of the main body 110. Figure 7 As shown, taking four compensating air inlet channels 130 as an example, a first compensating air inlet channel 131 is provided at the center of the main body 110. Two second compensating air inlet channels, namely second compensating air inlet channel 1321 and second compensating air inlet channel 2 1322, are distributed on a circumference C1 near the center of the main body 110. A third compensating air inlet channel 133 is distributed on a circumference C2 outside of circumference C1. The first compensating air inlet channel 131, the second compensating air inlet channel 1321, and the third compensating air inlet channel 133 are distributed along the same radial direction R1 of the main body 110. The second compensating air inlet channel 2 1322, which is located on the same circumferential circle C1 as the second compensating air inlet channel 1321, is located on a different radial direction R2.

[0089] In another optional embodiment, multiple compensation air inlet channels 130 are also provided, that is, N ≥ 2. Among the N compensation air inlet channels 130, except for the compensation air inlet channel 130 located at the center of the main body 110, the remaining compensation air inlet channels 130 are distributed in different circumferential directions of the main body 110. Figure 8 As shown, taking three compensating air inlet channels 130 as an example, the first compensating air inlet channel 131 is located in the middle of the main body 110 , the second compensating air inlet channel 132 is located on the circumference C1 of the radial direction R1 , and the third compensating air inlet channel 133 is located on the circumference C2 of the radial direction R2 .

[0090] like Figures 5 to 8 The compensating air inlet channel 130 of this embodiment is shown as a hole-type structure extending through the main body 110, for example, a hole-type structure having a circular and / or elliptical cross-section. It will be appreciated that in alternative embodiments, the compensating air inlet channel 130 may be a slit-type structure extending through the main body 110. In other alternative embodiments, the aperture of the hole-type structure may be uniform or may vary gradually from the top 111 to the bottom 112 of the main body 110. For example, the aperture of the hole-type structure may gradually decrease or increase from the top 111 to the bottom 112 of the main body 110.

[0091] The above-mentioned setting of the compensation air inlet channel 130 facilitates providing compensation gas to different areas of the substrate 300, or adjusting the ventilation volume, ventilation duration, ventilation type, etc. of each compensation air inlet channel 130 as needed, so that the compensation mechanism can be customized as needed.

[0092] Refer again Figure 9The manufacturing equipment 10 of this embodiment also includes a carrier device 200 arranged in the cavity 104 to carry the substrate 300 that needs to grow the semiconductor material layer. The gas outlet of the gas injection device 100 is arranged opposite to one side of the carrier surface of the carrier device 200. One side of the carrier surface of the carrier device 200 is used to carry the substrate 300 to be processed. The carrier device 200 can be a graphite disk with a diameter, or it can be other structures known to those skilled in the art. A rotating device 400 is provided below the carrier device 200 and passes through the cavity 104. The rotating device 400 supports the carrier device 200 and can drive the carrier device 200 to rotate around its axis during epitaxial growth under the drive of a motor. In an optional embodiment, during the growth process, the carrier device 200 is controlled to rotate around its axis at a rate of 10~1200 rpm to drive the substrate 300 carried by the carrier device 200 to rotate at the same speed.

[0093] like Figure 10 As shown, the carrier surface of the carrier device 200 of this embodiment has a plurality of carrier areas 201, and the carrier areas 201 are used to place substrates 300 to be processed, such as wafers. The carrier areas 201 are arranged around the middle area of ​​the carrier device so that each carrier area 201 is exposed to the environment of the reaction space. The gas injection device 100 and the carrier device 200 are arranged relative to each other. Specifically, the gas outlet side of the gas injection device 100 is arranged relative to one side of the carrier surface of the carrier device 200, and a reasonable vertical distance is maintained between the gas injection device 100 (specifically, the gas outlet side) and the carrier device 200 to ensure that the process gas can react on the surface of the substrate 300 on the carrier device 200 to achieve material growth, while ensuring the uniformity of the quality of the epitaxial growth film in the same batch.

[0094] In an optional embodiment, if Figure 9 As shown, the ratio between the diameter D of the carrier 200 and the vertical height H of the gas outlet of the gas injection device 100 from the carrier surface is 1.875:1 to 160:1. For example, D and H can be the following combinations: D = 320 mm, H = 30 mm; D = 200 mm, H = 5 mm; D = 320 mm, H = 25 mm; D = 150 mm, H = 15 mm; D = 600 mm, H = 15 mm; D = 800 mm, H = 5 mm; D = 800 mm, H = 80 mm.

[0095] The number and arrangement of the wafer carrier areas 201 on the carrier device 200 can be flexibly adjusted according to the process requirements to ensure that each wafer carrier area 201 is exposed to the environment of the reaction space. Figure 10As shown, the various carrier areas 201 on the carrier device 200 are distributed in a circular array around the middle area of ​​the carrier device 200. The carrier device 200 can be a disc, and the sizes of the various carrier areas 201 distributed thereon can be the same, completely different, or not completely the same. For example, each carrier area 201 is used to carry 8-inch wafers or 12-inch wafers, or some of the carrier areas 201 are used to carry 8-inch wafers, and other carrier areas 201 are used to carry 12-inch wafers. In an optional embodiment, the manufacturing equipment 10 is further provided with a heating device, which is arranged below the carrier device 200. The heating device heats the carrier device 200 and then transfers heat to the substrate 300 to achieve heating of the substrate 300. The process gas is ejected from the gas injection device 100 and flows through the carrier device 200, and can be quickly heated by the heat transfer of the carrier device 200, so that a growth reaction occurs above the substrate 300, such as epitaxial growth, to achieve material growth.

[0096] In this embodiment, in order to enable the introduction of process gas and compensation gas from the process gas inlet channel 120 and the compensation gas inlet channel 130 of the gas injection device 100, the manufacturing equipment 10 of this embodiment is also provided with a gas supply channel, which includes a process gas supply channel 500 connected to the process gas inlet channel 120, and a compensation gas supply channel 600 connected to the compensation gas inlet channel 130, and the compensation gas supply channel 600 is not connected to the process gas supply channel 500.

[0097] Taking the gas injection device 100 with the first process gas inlet channel 121 and the second process gas inlet channel 122 as an example, Figure 11 As shown, the process gas supply channel 500 includes a second process gas supply channel 502 that communicates with the first gas cavity 101 and further communicates with the first process gas inlet channel 121, and a first process gas supply channel 501 that communicates with the second gas cavity 102 and further communicates with the second process gas inlet channel 122. The first process gas supply channel 501 and the second process gas supply channel 502 are not connected to each other and are independently controlled. The first process gas supply channel 501 and the second process gas supply channel 502 each provide different source material gases. For example, in the case of growing a GaN material layer and / or an AlN material layer, the first process gas supply channel 501 is used to provide a first source gas containing a metal organic compound source, and the second process gas supply channel 502 is used to provide a second source gas containing a nitrogen source or an arsenic source.

[0098] The compensation air supply passage 600 is connected to the compensation air inlet passage 130, as shown in FIG. Figure 11As shown, when the main body 110 is provided with a compensation gas inlet channel 130 located in the middle of the main body 110, a compensation gas supply channel 600 is correspondingly provided. The compensation gas supply channel 600 includes a main line 6000 connected to the compensation gas inlet channel 130, and multiple branch lines extending from the main line 6000. Taking the growth of GaN material layer and / or AlN material layer as an example, it includes two branch lines: a first compensation branch line 600-1 and a second compensation branch line 600-2. For example, the first compensation branch line 600-1 is fed with a metal organic compound source, and the second compensation branch line is fed with a hydride gas. The compensation gas supply channel 600 is also provided with a compensation gas supply control device, such as a valve or switch that can realize the connection or disconnection between the compensation gas supply channel 600 and the compensation gas inlet channel 130. Specifically, the above-mentioned compensation gas supply control device can be respectively provided on the main line 6000 and each branch line.

[0099] When the number N of the compensation air inlet channels 130 is greater than or equal to 2, the compensation air supply channels 600 are connected to the compensation air inlet channels 130 in a one-to-one correspondence. Figure 12 As shown (for ease of presentation, Figure 12 and Figure 13 Only the compensation gas supply channel 600 is shown, and the process gas supply channel 500 is not shown. It can be understood that the process gas supply channel 500 has the same Figure 10 In an optional embodiment, each compensating air inlet channel 130 is connected to a compensating air supply channel 600, that is, the first compensating air inlet channel 131 is connected to the first compensating air supply channel 601, the second compensating air inlet channel 132 is connected to the second compensating air supply channel 602, and the third compensating air inlet channel 133 is connected to the third compensating air supply channel 603. The first compensating air supply channel 601, the second compensating air supply channel 602, and the third compensating air supply channel 603 all include a main line 6000 connected to the compensating air inlet channel 130, and a plurality of branch lines extending from the main line 6000. The compensating air supply channel and Figure 10 The compensation air supply channel 600 shown in FIG is configured the same as that in FIG, and will not be described in detail here.

[0100] In an optional embodiment, when the number N of the compensating air inlet channels 130 is greater than or equal to 2, the manufacturing equipment 10 includes a compensating air supply channel 600, which includes a main line 6000, the air inlet end of the main line 6000 includes a plurality of air inlet branch lines, and the air outlet end of the main line 6000 includes a plurality of air outlet branch lines. The number of the air inlet branch lines is determined by the type of reaction gas required for the epitaxial growth occurring in the cavity 104, and the number of the air outlet branch lines is determined by the number of compensating air inlet channels 130 of the main body 110.

[0101] Take the arrangement of three compensation air inlet passages 130 as an example, Figure 13 As shown, using the growth of a GaN material layer and / or an AlN material layer as an example, the compensation gas supply channel 600 includes a main line 6000. The inlet end of the main line 6000 includes two compensation branch lines, wherein the first compensation branch line 600-1 is fed with a metal organic compound source, and the second compensation branch line 600-2 is fed with a hydride gas. The outlet end of the main line 6000 includes three outlet branch lines: the first outlet branch line 6001 is connected to the first compensation gas inlet channel 131, the second outlet branch line 6002 is connected to the second compensation gas inlet channel 132, and the third outlet branch line 6003 is connected to the third compensation gas inlet channel 133. Accordingly, the main line 6000 and / or each of the inlet branch lines and / or each of the outlet branch lines can be provided with a compensation gas supply control device (valve, switch, etc.) to connect or disconnect the compensation gas supply channel 600 with the compensation gas inlet channel 130.

[0102] In an optional embodiment, the manufacturing equipment 10 is further provided with a compensation gas supply control device and a compensation control device. The detection device is provided in the main body 110, and is used to detect the substrate 300 in the chamber during the epitaxial growth process to obtain the growth parameters of the material grown on the substrate 300, such as the growth rate, the thickness of the material layer, etc. In an optional embodiment, the detection device can be a non-contact detection device, which is provided at the top 111 of the main body 110 of the gas injection device 100, and one or more detection devices can be provided. Preferably, any compensation air inlet channel 130 can be used as a detection channel of the non-contact detection device, or the process air inlet channel 120 closest to any compensation air inlet channel 130 can be used as a detection channel of the non-contact detection device. Furthermore, at least one compensation air inlet channel 130 close to the edge of the main body 110 is used as a detection channel. When one detection device is set up, since the supporting device 200 drives the substrate 300 to rotate during the epitaxial growth process, the growth parameters of different substrates 300 on different supporting areas can be obtained at different time points, or the growth parameters of different areas on the same substrate 300 can be obtained; when multiple detection devices are set up, the growth parameters of different substrates 300 on different supporting areas can be obtained at the same time point or different time points, or the growth parameters of different areas on the same substrate 300 can be obtained.

[0103] Refer again Figure 6When the N compensating air inlet channels 130 (the first compensating air inlet channel 131, the second compensating air inlet channel 132, the third compensating air inlet channel 133, ... the Nth compensating air inlet channel 13N) of the present invention are arranged sequentially from the middle along the radial direction of the main body 110 of the gas injection device 100, N detection devices can be provided, and the N detection devices (the first detection device T1, the second detection device T2, the third detection device T3, ... the Nth detection device TN) are sequentially provided at each of the above-mentioned compensating air inlet channels. Each of the above-mentioned detection devices can detect the temperature at the corresponding position and parameters such as the refractive index of the semiconductor material layer. Each detection device detects and obtains the growth rate of the semiconductor material layer in the area corresponding to the compensating air inlet channel in which it is located. Therefore, by providing the above-mentioned N detection devices, the growth rates of the semiconductor material layer in different areas in the radial direction of the substrate can be obtained.

[0104] A compensation gas supply control device is provided in the compensation gas supply channel 600 and is used to control the opening and closing of the corresponding compensation gas supply channel 600. The compensation control device is in communication with the detection device and the compensation gas supply control device, and is used to obtain the aforementioned growth parameters detected by the detection device and control the compensation gas supply control device based on the growth parameters to control the opening and closing of the compensation gas supply channel 600. Specifically, the compensation control device compares the growth parameters (e.g., growth rate, material layer thickness) of different substrates 300 or different regions of the same substrate 300 based on the received growth parameters. When a deviation occurs in the growth parameters, the compensation control device controls the compensation gas supply control device to open and introduce compensation gas into the chamber through the compensation gas inlet channel 130. During this process, the detection device provides real-time feedback on the material growth parameters, and the compensation control device receives and compares the growth parameters in real time until there is no difference between the growth parameters. At this point, the compensation control device controls the compensation gas inlet control device to close, stopping the introduction of compensation gas into the chamber.

[0105] The above process is repeated until the material growth is complete. The material layer grown by the manufacturing apparatus 10 provided in this embodiment has a uniform thickness, that is, the thickness and quality of the material layer are uniform between different substrates 300 in different supporting areas of the supporting device 200; and the thickness and quality of the material layer are uniform in different areas of the same substrate 300.

[0106] In order to realize the opening and closing of the above-mentioned detection device, compensation air inlet channel, process air inlet channel and other components related to the semiconductor material growth process, as well as the processing of various relevant data related to the semiconductor growth process and the adjustment of relevant parameters, the manufacturing equipment 10 provided by the present invention also includes different functional modules. Specifically, Figure 14As shown, the manufacturing equipment 10 of the present application includes a detection module that communicates with the detection device in a one-to-one correspondence, and a source gas compensation module that communicates with each compensation air inlet channel 130 in a one-to-one correspondence. It also includes an equipment parameter input module for setting parameters (temperature, pressure, etc.) within the cavity 104 of the manufacturing equipment 10, and other function expansion modules (such as a visualization module). The manufacturing equipment 10 also includes an internal data calculation module, which communicates with each of the detection modules, source gas compensation module, equipment parameter input module, and function expansion module to receive data transmitted by the above modules, analyze the data, and then feed it back to each module. Each module controls the corresponding component to open and close, completing the adjustment of the production process.

[0107] Example 1

[0108] This embodiment provides a method for manufacturing a compound semiconductor. The manufacturing equipment provided by this method is a MOCVD device. The MOCVD device is used for epitaxial growth of GaN materials.

[0109] Also refer to Figure 9 The MOCVD apparatus also includes a chamber 104, a carrier 200, a heating device, a detection device, and a gas injection device 100. The gas injection device 100 is disposed at the top of the chamber 104. The substrate 300 on which the semiconductor compound is grown is placed in the carrier area of ​​the carrier 200. In this embodiment, the substrate 300 is a sapphire substrate. The gas injection device 100 includes several process gas inlet channels 120 and N compensation gas inlet channels 130. The process gas inlet channels 120 serve as the main source gas delivery channels, while the compensation gas inlet channels 130 serve as compensation source gas delivery channels. In this embodiment, the diameter D of the carrier 200 is 320 mm, and the vertical distance H from the gas outlet (bottom surface) of the gas injection device 100 to the carrier surface of the carrier 200 (i.e., to the surface of the substrate 300 supported by the carrier 200) is 30 mm. The reaction temperature in chamber 104 is controlled at 1050°C and the reaction pressure is controlled at 100 mbar. The carrier 200 rotates at 1000 rpm driven by a rotating device 400 (e.g., a shaft). A detection device can detect the temperature of the surface of the carrier 200 and the surface of the semiconductor material layer growing on the substrate. It can also detect the reflectivity of the semiconductor material layer growing on the substrate, from which the growth rate of the semiconductor material layer in the corresponding area can be calculated. The detection device is specifically a MOCVD online monitoring system, viperRTC-LSS, which calculates the growth rate by measuring the reflectivity of the light on the surface of the growing film. Its installation and operation within chamber 104 are conventional techniques in the art.

[0110] In this embodiment, the process gas inlet channel 120 in the gas injection device includes a channel for the first source gas (metal organic compound source) and a channel for the second source gas (ammonia and hydrogen), and the channels for ammonia and hydrogen are alternately distributed with the channels for the metal organic compound source. Figure 4 The first process gas inlet channel 121 serves as the supply channel for the first source gas, and the second process gas inlet channel 122 serves as the channel for the second source gas. The first and second process gas inlet channels 121, 122 are arranged in a staggered, inline configuration to form an air curtain, forming multiple rows. The gas injection apparatus 100 is equipped with one compensating gas inlet channel 130 (N = 1), located at the center of the gas injection apparatus 100.

[0111] Reference Figure 11 In this embodiment, corresponding to the above-mentioned single compensating air intake channel 130, a compensating air supply channel 600 is provided. The compensating air supply channel 600 includes a main line 6000 connected to the compensating air intake channel 130, and a first compensating branch line 600-1 and a second compensating branch line 600-2 extending from the main line 6000. The first compensating branch line 600-1 and the second compensating branch line 600-2 do not affect each other and are independently controlled.

[0112] In this embodiment, 50 ml / min of gallium source trimethyl gallium source is introduced through each first process gas inlet channel 121, and 10 liter / min of nitrogen source ammonia gas and 30 liter / min of hydrogen gas are introduced through each second process gas inlet channel 122. That is, in this embodiment, M O =50 ml / min, M H =40 liters / minute. Without gas compensation, the detection device uses the compensation air inlet channel 130 and each air inlet channel to measure the growth rate of the GaN material in the inner circle (within 1 / 3 of the diameter of the 8-inch wafer from the center) in the radial direction of the substrate to be 2.3 microns / hour, and the growth rate of the outer circle is 2.6 microns / hour. It can be seen that without any gas compensation, there is a large growth rate difference in different radial ranges of the same substrate, that is, the growing GaN material layer has serious non-uniformity. In addition, without any gas compensation, the growth rate of the GaN material layer in the inner circle of the substrate is smaller than the growth rate of the GaN material layer in the outer circle (that is, V M-1 <V M), from this, it can be judged that during the growth of the GaN material layer, the inner circle needs to compensate for the metal organic compound source gas. Specifically, during the growth process, since the second source gas is introduced in excess relative to the first source gas, and the carrier device 200 is driven by the rotating device 400 to rotate to a certain speed range, the process gas above the substrate is dragged by the rotation of the carrier device 200 to form a rotating airflow and flow toward the edge of the carrier device 200. Therefore, the growth rate of the outer circle tends to be higher than the growth rate of the inner circle. In order to compensate for the growth rate of the inner circle, the metal organic compound source gas is introduced from the compensation air inlet channel 130 in the center.

[0113] In order to eliminate the above growth rate difference between the inner and outer circles of the substrate and achieve uniformity of the thickness of the GaN material layer on the inner and outer circles of the substrate, during the growth of the GaN material, according to the compensation formula M M-1 =α((V M / V M-1 )-1)Mo, where α=0.92, V M 、V M-1 Corresponding to the above outer ring growth rate and inner ring growth rate, the gas flow rate M that needs to be compensated is calculated M-1 =4 ml / min.

[0114] Specifically, the internal data calculation module receives the thickness values ​​of the inner and outer rings and calculates the gas flow M to be compensated according to the compensation formula. M-1 , and then the obtained gas flow M M-1 The signal is then transmitted to the source gas compensation module. Based on the gas type being compensated, which is a metal organic compound source gas, the source gas compensation module controls the opening of the corresponding first compensation branch pipe 600-1 to introduce 4 ml / min of trimethylgallium (TMG) into the compensation gas inlet channel. No gas compensation is performed in the second compensation branch pipe 600-2. Growth continues for two hours. After the growth process is complete, atomic force microscopy (AFM) measurements reveal an average thickness of 5.2 microns for the inner ring of the GaN material layer and 5.2 microns for the outer ring, demonstrating uniform GaN material layer thickness.

[0115] Example 2

[0116] This embodiment uses the MOCVD equipment of the first embodiment to grow GaN materials, with the following differences:

[0117] In this embodiment, the diameter D of the carrier 200 of the manufacturing equipment 10 is 200 mm, and the vertical distance H from the gas outlet of the gas injection device 100 to the carrier surface of the carrier 200 is 5 mm. The rotation speed of the carrier 200 is controlled to be 10 rpm. In this embodiment, 50 ml / min of trimethyl gallium source is introduced through the first process gas inlet channel 121, and 10 liters / min of ammonia and 30 liters / min of hydrogen are introduced through the second process gas inlet channel 122. That is, in this embodiment, M O =50 ml / min, M H = 40 liters / minute. Without gas compensation, the inner ring growth rate detected by the detection device during the growth of the GaN material layer was 2.3 microns / hour and the outer ring growth rate was 2.5 microns / hour.

[0118] As mentioned above, when no gas compensation is performed, the growth rate of the GaN material layer in the inner circle of the substrate is smaller than the growth rate of the GaN material layer in the outer circle (i.e., V M-1 <V M ), from which it can be judged that during the growth of the GaN material layer, the inner circle needs to compensate for the metal organic compound source gas. Therefore, according to the compensation formula M M-1 =α((V M / V M-1 )-1)Mo, where α=0.92, V M 、V M-1 Corresponding to the above outer ring growth rate and inner ring growth rate, the gas flow rate M that needs to be compensated is calculated M-1 =4 ml / min.

[0119] 4 ml / min of trimethylgallium (TMG), a metal organic compound source gas, was introduced into the compensation inlet channel 130 via the first compensation branch line 600-1. No gas compensation was performed in the second compensation branch line 600-2, which provided the hydride compensation gas. After automatic system regulation, the inner ring growth rate of the GaN material layer, as measured by a detection device, was 2.6 microns / hour, and the outer ring growth rate was 2.6 microns / hour. After two hours of growth, AFM measurements revealed an average thickness of 5.2 microns for the inner ring and 5.2 microns for the outer ring, demonstrating uniform GaN material layer thickness.

[0120] Example 3

[0121] This embodiment uses the MOCVD equipment of the first embodiment to grow GaN materials, with the following differences:

[0122] In this embodiment, the diameter D of the carrier 200 is 150 mm, and the vertical distance H from the gas outlet of the gas injection device 100 to the carrier surface of the carrier 200 is 15 mm. The carrier 200 rotates at a speed of 500 rpm driven by the rotating shaft. Figure 5 and Figure 12 As shown, three compensating air inlet channels are arranged along the same radial direction of the main body 110 from the center of the gas injection device. The first compensating air inlet channel 131 is arranged at the center position of the main body 110, the second compensating air inlet channel 132 is arranged on a circumference 50 mm away from the center position of the main body 110, and the third compensating air inlet channel 133 is arranged on a circumference 100 mm away from the center position of the main body.

[0123] Also refer to Figure 13 In this embodiment, a single compensating gas supply channel 600 is provided. This compensating gas supply channel 600 comprises a main line 6000. The inlet end of main line 6000 includes two compensating branch lines: a first compensating branch line 600-1 for introducing a metal organic compound source, and a second compensating branch line 600-2 for introducing a hydride gas. The outlet end of main line 6000 includes three outlet branch lines: a first outlet branch line 6001 connected to the first compensating gas inlet channel 131, a second outlet branch line 6002 connected to the second compensating gas inlet channel 132, and a third outlet branch line 6003 connected to the third compensating gas inlet channel 133. Control devices (e.g., pneumatic valves) are provided on main line 6000 at the front end of each outlet branch line, as well as on the first and second compensating branch lines. This allows the first and second compensating branch lines 600-1 and 600-2 to enter the main line in parallel, independently controlling each other without interfering with each other. The compensation source gas is uniformly delivered into the cavity 104 via three outlet branch pipelines as source material compensation.

[0124] In this embodiment, 50 ml / min of trimethyl gallium source is introduced through the first process gas inlet channel 121, and 5 liters / min of ammonia and 10 liters / min of hydrogen are introduced through the second process gas inlet channel 122. That is, in this embodiment, M O =50 ml / min, M H = 15 liters / minute. Without gas compensation, the growth rate of the inner circle GaN material layer was measured to be 2.3 microns / hour, and the growth rate of the outer circle was 2.75 microns / hour.

[0125] As mentioned above, when no gas compensation is performed, the growth rate of the GaN material layer in the inner circle of the substrate is smaller than the growth rate of the GaN material layer in the outer circle (i.e., V M-1 <V M), from which it can be judged that during the growth of the GaN material layer, the inner circle needs to compensate for the metal organic compound source gas. Therefore, according to the compensation formula M M-1 =α((V M / V M-1 )-1)Mo, where α=0.92, V M 、V M-1 Corresponding to the above outer ring growth rate and inner ring growth rate, the gas flow M that needs to be compensated for each outlet branch pipeline is calculated. M-1 =4 ml / min, therefore, the gas flow rate required in the main pipeline of the three outlet branch pipelines is 12 ml / min.

[0126] Trimethylgallium (TMG) was introduced into the main line at a rate of 12 ml / min via the first compensation branch line 600-1, while the second compensation branch line 600-2, which compensates for the hydride gas, did not provide gas compensation. The 12 ml / min flow of TMG from the main line was split into three paths, entering the first, second, and third outlet branch lines 6001, 6002, and 6003 at a rate of 4 ml / min, respectively. The gas was then uniformly delivered into the chamber 104 via the first, second, and third compensation inlet channels 131, 132, and 133, as source material compensation. Growth continued for two hours, and AFM measurements revealed an average thickness of 5.5 microns in the inner ring of the GaN material and 5.5 microns in the outer ring, demonstrating uniform GaN material layer thickness.

[0127] Example 4

[0128] This embodiment uses the MOCVD equipment of the third embodiment to grow GaN materials, with the following differences:

[0129] In this embodiment, the diameter D of the carrier 200 of the manufacturing equipment 10 is 320 mm, and the vertical distance H from the gas outlet of the gas injection device 100 to the carrier surface of the carrier 200 is 30 mm. The carrier 200 is controlled to rotate at a speed of 1200 rpm driven by the rotating shaft. Figure 13 In this embodiment, a single compensating gas supply channel 600 is provided. This compensating gas supply channel 600 comprises a main line 6000. The inlet end of main line 6000 includes two compensating branch lines. A first compensating branch line 600-1 is used to introduce a metal organic compound source, and a second compensating branch line 600-2 is used to introduce a hydride gas. The outlet end of main line 6000 includes three outlet branch lines. A first outlet branch line 6001 connects to the first compensating gas inlet channel 131, a second outlet branch line 6002 connects to the second compensating gas inlet channel 132, and a third outlet branch line 6003 connects to the third compensating gas inlet channel 133.

[0130] In this embodiment, 50 ml / min of trimethyl gallium source is introduced through the first process gas inlet channel 121, and 15 L / min of ammonia and 25 L / min of hydrogen are introduced through the second process gas inlet channel 122. That is, in this embodiment, M O =50 ml / min, M H = 40 liters / minute. Without gas compensation, the growth rate of the inner circle GaN material layer was measured to be 2.6 microns / hour, and the growth rate of the outer circle was 2.4 microns / hour.

[0131] As can be seen above, in this embodiment, the growth rate of the inner ring is greater than the growth rate of the outer ring, that is, V M-1 >V M , it can be judged that the second source gas needs to be compensated. Therefore, according to the compensation formula: M M-1 =γ(1-(V M / V M-1 ))M H Among them, V M 、V M-1 Corresponding to the above outer ring growth rate and inner ring growth rate, γ=1.2, M H The total gas flow rate of the second source gas introduced into process gas inlet channel 120 is 1.4 L / min for ammonia and 2.3 L / min for hydrogen, respectively, introduced into compensation gas inlet channel 130. The total gas flow rate required in the main line of the three outlet branch pipelines is 11.1 L / min, including 6.9 L / min for hydrogen and 4.2 L / min for ammonia.

[0132] 6.9 liters / minute of hydrogen and 4.2 liters / minute of ammonia were introduced into the main line via the second compensation branch line 600-2, while no gas compensation was performed in the first compensation branch line 600-1, which compensated for the metal organic compound source gas. The 6.9 liters / minute of hydrogen and 4.2 liters / minute of ammonia introduced into the main line were split into three paths, entering the first outlet branch line 6001, the second outlet branch line 6002, and the third outlet branch line 6003 at flow rates of 2.3 liters / minute for hydrogen and 1.4 liters / minute for ammonia, respectively. The gas was then uniformly delivered into the chamber 104 via the first compensation inlet channel 131, the second compensation inlet channel 132, and the third compensation inlet channel 133 for source material compensation. Growth continued for two hours. AFM measurements revealed an average thickness of 5.0 microns in the inner ring of the GaN material and 5.0 microns in the outer ring, demonstrating uniform GaN material layer thickness.

[0133] Example 5

[0134] This embodiment also uses the MOCVD equipment of the third embodiment to grow GaN materials, with the following differences:

[0135] In this embodiment, the diameter D of the carrier 200 of the manufacturing equipment 10 is 320 mm, and the vertical distance H from the gas outlet of the gas injection device 100 to the carrier surface of the carrier 200 is 30 mm. The carrier 200 is controlled to rotate at a speed of 500 rpm driven by the rotating shaft. Figure 5 and Figure 11 As shown, three compensating air inlet channels are arranged from the middle of the main body of the gas injection device along the same radial direction of the main body, the first compensating air inlet channel 131 is arranged at the center position of the main body 110, the second compensating air inlet channel 132 is arranged on a circumference 50 mm away from the center position of the main body, and the third compensating air inlet channel 133 is arranged on a circumference 100 mm away from the center position of the main body.

[0136] Also refer to Figure 12 In this embodiment, each compensating gas inlet channel 130 is connected to a compensating gas supply channel 600. That is, the first compensating gas inlet channel 131 is connected to the first compensating gas supply channel 601, the second compensating gas inlet channel 132 is connected to the second compensating gas supply channel 602, and the third compensating gas inlet channel 133 is connected to the third compensating gas supply channel 603. Furthermore, the first compensating gas supply channel 601, the second compensating gas supply channel 602, and the third compensating gas supply channel 603 each include a main line 6000 connected to the compensating gas inlet channel 130, and a first compensating branch line 600-1 and a second compensating branch line 600-2 extending from the main line 6000. The first compensating branch line 600-1 is used to introduce a metal organic compound source, and the second compensating branch line 600-2 is used to introduce a hydride gas. Control devices (such as pneumatic valves) are respectively arranged on the main line 6000 of each compensating air supply channel 600 and on the first compensating branch line and the second compensating branch line, so that the first compensating branch line 600-1 and the second compensating branch line 600-2 can be connected in parallel to enter their respective connected main lines. Each compensating air supply channel 600 and its respective first compensating branch line 600-1 and second compensating branch line 600-2 do not affect each other and are independently controlled.

[0137] In this embodiment, 50 ml / min of trimethyl gallium source is introduced through the first process gas inlet channel 121, and 15 L / min of ammonia and 25 L / min of hydrogen are introduced through the second process gas inlet channel 122. That is, in this embodiment, M O =50 ml / min, M H = 40 liters / minute. Without gas compensation, the growth rate of the GaN material layer in the inner circle (within one-third of the diameter from the center of the 8-inch wafer) is 2.4 microns / hour, the growth rate in the middle circle (from the outer edge of the inner circle to the outer edge of the range of two-thirds of the diameter from the center) is 2.5 microns / hour, and the growth rate in the outer circle is 2.6 microns / hour.

[0138] As can be seen above, in this embodiment, the growth rate of the inner ring is smaller than the growth rate of the middle ring, and the growth rate of the middle ring is smaller than the growth rate of the outer ring, that is, both satisfy V M-1 <V M , it can be judged that the first source gas needs to be introduced into the M-1th compensation inlet channel. Therefore, according to the compensation formula M M-1 =α((V M / V M-1 )-1)Mo, wherein α=1, and it is calculated that 4 ml / min of trimethylgallium needs to be introduced into the first compensating air inlet channel 131, and the amount of the metal organic compound source gas that needs to be compensated decreases as it approaches the outside. 2 ml / min of trimethylgallium needs to be introduced into the second compensating air inlet channel 132, and 1 ml / min of trimethylgallium needs to be introduced into the third compensating air inlet channel 133.

[0139] Thus, the first compensation branch lines 600-1 of the first compensation gas supply channel 601, the second compensation gas supply channel 602, and the third compensation gas supply channel 603 were controlled to be open, and the metal organic compound source was introduced into their respective main lines at flow rates of 4 ml / min, 2 ml / min, and 1 ml / min, respectively. Trimethylgallium was then compensated into the cavity 104 via the first compensation gas inlet channel 131, the second compensation gas inlet channel 132, and the third compensation gas inlet channel 133. The second compensation branch lines 600-2 of the first compensation gas supply channel 601, the second compensation gas supply channel 602, and the third compensation gas supply channel 603 were closed, and hydride gas compensation was not performed. Growth continued for 2 hours. AFM measurements showed that the average thickness of the inner circle of the GaN material was 5.5 microns, and the outer circle was 5.5 microns, achieving uniform GaN material layer thickness.

[0140] Example 6

[0141] This embodiment uses the MOCVD equipment of the first embodiment to grow AlN material, with the following differences:

[0142] In this embodiment, the diameter D of the carrier device of the manufacturing apparatus 10 is 600 mm, and the vertical distance H from the gas outlet of the gas injection device 100 to the carrier surface of the carrier device 200 is 15 mm. The reaction temperature in the control chamber 104 is 1200°C, the reaction pressure is 50 mbar, and the carrier device 200 rotates at a speed of 1000 rpm driven by the rotating shaft. The arrangement of the compensation air inlet channel 130 is also referred to. Figure 6 and Figure 12As shown, three compensation air inlet channels 130 are provided along the same radial direction of the main body 110 from the middle of the main body 110 of the gas injection device 100. The first compensation air inlet channel 131 is provided at the center of the main body 110, the second compensation air inlet channel 132 is provided on a circumference 70 mm away from the center of the main body, and the third compensation air inlet channel 133 is provided on a circumference 140 mm away from the center of the main body. The arrangement of the compensation air supply channel 600 in this embodiment is as shown in FIG. Figure 11 As shown, the configuration is the same as that of the fifth embodiment.

[0143] In this embodiment, the first, second, and third compensating air inlet channels are independently designed and do not interfere with each other. Furthermore, detection devices are installed in the process air inlet channels closest to each of the first, second, and third compensating air inlet channels to detect the reflectivity of the AlN material layer in the corresponding area, thereby detecting the real-time growth rate of the AlN material layer. Furthermore, a detection device is installed 210 mm from the center of the main body as a fourth growth rate measurement point, in addition to the detection devices used in the process air inlet channels closest to each of the first, second, and third compensating air inlet channels. This detection device detects the reflectivity of the AlN material layer in the corresponding area, thereby detecting the real-time growth rate of the AlN material layer.

[0144] In this embodiment, 500 ml / min of trimethylaluminum source is introduced through the first process gas inlet channel 121, and 5 liters / min of ammonia and 70 liters / min of hydrogen are introduced through the second process gas inlet channel 122. That is, in this embodiment, M O =500 ml / min, M H = 75 liters / minute. Without gas compensation, during the growth of the AlN material layer, the detection devices detected the following data: the growth rate of the inner circle of the AlN material layer corresponding to the center of the main body was 1.8 microns / hour; the growth rate of the middle circle of the AlN material layer corresponding to the process gas inlet channel closest to the second compensation gas inlet channel 132 was 1.9 microns / hour; the growth rate of the outer circle of the AlN material layer corresponding to the process gas inlet channel closest to the third compensation gas inlet channel 133 was 2 microns / hour; and the growth rate at the fourth growth rate test point was 2 microns / hour.

[0145] It can be seen that the growth rate of the AlN material layer at the edge of the carrier device 200 corresponding to the edge of the main body of the gas injection device is greater than the growth rate of the AlN material layer in the middle area of ​​the carrier device 200 corresponding to the center of the main body of the gas injection device, that is, V M-1 <V M, it can be judged that during the growth of the AlN material layer, the first source gas needs to be compensated. Therefore, according to the compensation formula M M-1 =α((V M / V M-1 )-1)Mo, where α=0.8, calculate the flow rate of the first source gas that needs to be compensated. Since the outer ring has the highest growth rate, in this embodiment, the inner and outer rings, and the middle and outer rings are used as the calculation basis respectively. That is, when calculating the flow rate of the first source gas introduced into the first compensation inlet channel 131, V M 、V M-1 Corresponding to the growth rates of the outer and inner rings respectively; when calculating the flow rate of the first source gas introduced into the second compensation inlet channel 132, V M 、V M-1 Corresponding to the growth rates of the outer and middle rings mentioned above, respectively. Calculations show that 44 ml / min of trimethylaluminum needs to be introduced into the first compensation air inlet channel 131, and 22 ml / min of trimethylaluminum needs to be introduced into the second compensation air inlet channel 132. Since the growth rates of the AlN material layer of the outer ring corresponding to the third and fourth compensation air inlet channels are the same, trimethylaluminum compensation is not required in the third compensation air inlet channel 133. None of the three compensation air inlet channels 130 mentioned above performs hydride gas compensation. The growth time continued for 3 hours, and the average thickness of the AlN material layer measured at each test point was 6 microns, achieving uniformity in the thickness of the AlN material layer.

[0146] Example 7

[0147] This embodiment uses the MOCVD equipment of the first embodiment to grow GaAs materials, with the following differences:

[0148] In this embodiment, the diameter D of the carrier device of the manufacturing apparatus 10 is 800 mm, and the vertical distance H from the gas outlet of the gas injection device 100 to the carrier surface of the carrier device 200 is 5 mm. The reaction temperature in the control chamber 104 is 700°C, the reaction pressure is 100 mbar, and the carrier device 200 rotates at a speed of 1000 rpm driven by the rotating shaft. The arrangement of the compensation air inlet channel 130 is also referred to. Figure 6 and Figure 12As shown, three compensation gas inlet channels 130 are set along the same radial direction of the main body 110 from the center position of the main body 110 of the gas injection device 100, the first compensation gas inlet channel 131 is set at the center position of the main body 110, the second compensation gas inlet channel 132 is set on a circumference of 100 mm away from the center position of the main body, and the third compensation gas inlet channel 133 is set on a circumference of 200 mm away from the center position of the main body. In addition, a detection device is set at 300 mm away from the center position of the main body, as the fourth growth rate test point in addition to the detection device used for the process gas inlet channels closest to the first compensation gas inlet channel, the second compensation gas inlet channel and the third compensation gas inlet channel, so as to detect the reflectivity of the GaAs material layer corresponding to the outermost circle, and then detect the real-time growth rate of the GaAs material layer. The setting of the compensation gas supply channel 600 in this embodiment is as shown in FIG. Figure 12 As shown, the configuration is the same as that of the fifth embodiment.

[0149] In this embodiment, 200 ml / min of trimethyl gallium source is introduced through the first process gas inlet channel 121, and 500 ml / min of arsenic source (such as arsine) and 150 liters / min of hydrogen are introduced through the second process gas inlet channel 122. That is, in this embodiment, M O =200 ml / min, M H = 150.5 liters / minute. Without gas compensation, the inner circle growth rate detected by the detection device during the growth of the GaAs material layer was 1.8 microns / hour, the middle circle growth rate was 1.9 microns / hour, the outer circle growth rate was 1.9 microns / hour, and the outermost circle growth rate was 2.0 microns / hour.

[0150] It can be seen that, in general, the growth rate of the GaAs material layer in the inner circle of the substrate is smaller than the growth rate of the GaAs material layer in the outer circle, that is, V M-1 <V M , it can be judged that during the growth of the GaAs material layer, the first source gas needs to be compensated. Therefore, according to the compensation formula M M-1 =α((V M / V M-1 )-1)Mo, where α=0.9, calculate the flow rate of the first source gas that needs to be compensated. Since the growth rate of the outermost circle is the largest and is different from that of the middle circle, outer circle, and inner circle, in this embodiment, the outermost circle and outer circle, and the outermost circle and middle circle are used as the calculation basis respectively. That is, when calculating the flow rate of the metal organic compound source introduced into the first compensation inlet channel 131, V M 、V M-1 Corresponding to the growth rates of the outermost circle and the inner circle respectively; when calculating the flow rate of the metal organic compound source introduced into the second compensation inlet channel 132, V M 、V M-1These correspond to the growth rates of the outermost and middle rings, respectively. Calculations show that 18 ml / min of trimethylgallium source should be introduced into the first compensating gas inlet channel 131, and 9 ml / min of trimethylgallium source should be introduced into the second compensating gas inlet channel 132. Because the growth rates of the GaAs material layers in the inner and outer rings are the same, 9 ml / min of trimethylgallium source should also be introduced into the third compensating gas inlet channel 133.

[0151] 18 ml / min of trimethylgallium, a metal organic compound source gas, is introduced into the compensation gas inlet channel via the first compensation branch line 600-1 of the first compensation gas supply channel 601, while the second compensation branch line 600-2, used for compensating hydride gas, does not perform gas compensation. 9 ml / min of trimethylgallium, a metal organic compound source gas, is introduced into the compensation gas inlet channel via the first compensation branch line 600-1 of the second compensation gas supply channel 602, while the second compensation branch line 600-2, used for compensating hydride gas, does not perform gas compensation. 9 ml / min of trimethylgallium, a metal organic compound source gas, is introduced into the compensation gas inlet channel via the first compensation branch line 600-1 of the third compensation gas supply channel 603, while the second compensation branch line 600-2, used for compensating hydride gas, does not perform gas compensation. After automatic modulation of the system, during the growth of the GaAs material layer, the inner ring growth rate detected by the detection device was 3.2 microns / hour, the middle ring growth rate was 3.2 microns / hour, and the outer and outermost ring growth rates were both 3.2 microns / hour. After two hours of continued growth, the average thickness of the inner ring of the GaAs material layer was 6.4 microns, the middle ring was 6.4 microns, and the outer and outermost rings were 6.4 microns. The thickness of the inner and outer rings was consistent, achieving uniformity in the thickness of the GaN material layer. At the same time, within the same growth time, the growth rate of the GaN material layer was increased, that is, while ensuring the uniformity of the material layer thickness, the growth rate of the material layer was increased.

[0152] Example 8

[0153] This embodiment uses the MOCVD equipment of the first embodiment to grow GaN materials, with the following differences:

[0154] In this embodiment, the diameter D of the carrier 200 is 800 mm, and the vertical distance H from the gas outlet of the gas injection device 100 to the carrier surface of the carrier 200 is 80 mm. The carrier 200 is controlled to rotate at a speed of 200 rpm driven by the rotating shaft. In this embodiment, the process gas inlet channel 120 is also arranged as follows. Figure 3 The gas injection device 100 is provided with a compensation air inlet channel 130 , and the compensation air inlet channel 130 is provided at the center of the gas injection device 100 .

[0155] In this embodiment, 400 ml / min of trimethyl gallium source is introduced through the first process gas inlet channel 121, and 50 liters / min of ammonia and 200 liters / min of hydrogen are introduced through the second process gas inlet channel 122. That is, in this embodiment, M O =400 ml / min, M H = 250 liters / minute. Without gas compensation, the growth rate of the inner circle GaN material layer is 2.5 microns / hour, and the growth rate of the outer circle is 2.91 microns / hour.

[0156] As mentioned above, when no gas compensation is performed, the growth rate of the GaN material layer in the inner circle of the substrate is smaller than the growth rate of the GaN material layer in the outer circle (i.e., V M-1 <V M ), from which it can be judged that the first source gas needs to be compensated during the growth of the GaN material layer. Therefore, according to the compensation formula M M-1 =α((V M / V M-1 )-1)Mo, where α=1, V M 、V M-1 Corresponding to the above outer ring growth rate and inner ring growth rate, the gas flow rate M that needs to be compensated is calculated M-1 =66 ml / min.

[0157] The corresponding first compensation branch line 600-1 was controlled to open, allowing 80 ml / min of trimethylgallium (TMG) as a metal organic compound source gas to flow into the compensation gas inlet channel. The second compensation branch line 600-2, which serves as the hydride gas compensation channel, did not provide gas compensation. Growth continued for two hours, and the average thickness of the GaN material was measured to be 5.5 microns in the inner ring and 5.5 microns in the outer ring, achieving uniform GaN material layer thickness.

[0158] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the present invention. Anyone skilled in the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by one of ordinary skill in the art without departing from the spirit and technical principles disclosed herein are intended to be covered by the claims.

Claims

1. A method for manufacturing a compound semiconductor, characterized in that: include: A compound semiconductor manufacturing device is provided, wherein the compound semiconductor manufacturing device is equipped with a detection device, a gas injection device, and a carrier device. The gas injection device includes gas inlet channels consisting of a plurality of process gas inlet channels and at least one compensating gas inlet channel. Each of the compensating gas inlet channels is provided in the region where the plurality of process gas inlet channels are located. Among at least one of the compensating gas inlet channels, one is located at the center of the gas injection device. A rotating device is provided below the carrier device, the rotating device supports the carrier device and drives the carrier device to rotate. The number of the compensating gas inlet channels is N, where N is a natural number greater than 1. The compensating gas inlet channels are arranged radially from the center of the gas injection device. placing a substrate onto a carrier device within the manufacturing apparatus; The reaction temperature in the manufacturing equipment is controlled to reach 700-1200 degrees Celsius and the reaction pressure is controlled to reach 50-100 millibars. The substrate is controlled to rotate at a rate of 10-1200 rpm around the axis of the substrate carrier. A flow rate of M is provided to the substrate through each process air inlet channel. O The first source gas containing group III elements and the flow rate are M H A second source gas containing a Group V element is used to grow a semiconductor epitaxial layer on the substrate, and the flow rate M of the second source gas is controlled. H The flow rate M of the first source gas O M H :M O 30:1~5000:1; During the growth process, the detection device is used to obtain the growth rates of the semiconductor material layer in different regions in the radial direction of the substrate; During the growth process, determining whether to introduce a compensation gas through at least one of the compensation gas inlet channels to synchronously perform a gas compensation process according to each growth rate, wherein the compensation gas is the first source gas or the second source gas; Wherein, during the growth process, the step of using the detection device to obtain the growth rates of different regions of the semiconductor material layer in the radial direction of the substrate includes: The detection device is used to obtain the material growth rate V of the substrate area corresponding to the M-1th compensation inlet channel on the semiconductor material layer. M-1 , and obtaining the material growth rate V of the substrate region corresponding to the Mth compensation inlet channel adjacent to the M-1th compensation inlet channel M , the substrate region corresponding to the M-1th compensating air inlet channel is closer to the center of the substrate than the substrate region corresponding to the Mth compensating air inlet channel, where M is a positive integer greater than or equal to 2 and less than or equal to N; According to V M-1 and V M The type and flow rate of the compensation gas introduced from the M-1th compensation air inlet channel are determined by the size relationship of ; Judge V M-1 >V M Then, the second source gas is introduced from the M-1th compensation gas inlet channel, and the flow rate is controlled to M M-1 =γ(1-(V M / V M-1 ))M H ; Where, γ is the compensation coefficient, γ=0.8~1.2; Judge V M-1 <V M Then, the first source gas is introduced from the M-1th compensation gas inlet channel, and the flow rate is controlled to M M-1 =α((V M / V M-1 )-1)M O ; Among them, α is the compensation coefficient, α=0.8~1.

2.

2. The method for manufacturing a compound semiconductor according to claim 1, wherein The step of determining whether to introduce compensation gas through at least one of the compensation gas inlet channels according to each of the growth rates to synchronously perform gas compensation processing comprises: The compensating gas is introduced into each compensating gas inlet channel, and the compensating gas flow rate provided by the compensating gas inlet channel close to the center of the gas injection device in two adjacent compensating gas inlet channels is controlled to be greater than or equal to the compensating gas flow rate provided by the other compensating gas inlet channel.

3. The method for manufacturing a compound semiconductor according to claim 1, wherein Control the ratio between the flow rate of the first source gas introduced through each of the process gas inlet channels and the flow rate of the first source gas introduced through each of the compensation gas inlet channels, and control the ratio between the flow rate of the second source gas introduced through each of the process gas inlet channels and the flow rate of the second source gas introduced through each of the compensation gas inlet channels to be 5:1~50:

1.

4. The method for manufacturing a compound semiconductor according to claim 3, wherein: The flow rate of the first source gas or the second source gas introduced into each of the compensation gas inlet channels is 1-70 ml / min.

5. The method for manufacturing a compound semiconductor according to claim 1, wherein In the growth process, the flow rate M of the first source gas is controlled O 50~500 ml / min.

6. The method for manufacturing a compound semiconductor according to claim 5, wherein: The second source gas includes hydrogen and a source gas containing Group V hydrides. During the growth process, the source gas containing Group V hydrides provided through each process gas inlet channel has a flow rate of 0.5 to 50 liters / minute, and the flow rate of hydrogen is 10 to 200 liters / minute.

7. The method for manufacturing a compound semiconductor according to claim 1, wherein: The first source gas contains a gallium source or an aluminum source, and the second source gas contains a nitrogen source or an arsenic source.

8. The method for manufacturing a compound semiconductor according to claim 1, wherein At least three compensating air inlet channels are arranged in the same radial direction of the gas injection device, and adjacent compensating air inlet channels have the same spacing distance.

9. The method for manufacturing a compound semiconductor according to claim 1, wherein: At least two compensating air inlet channels are arranged in the same radial direction of the gas injection device, the distance between adjacent compensating air inlet channels is L1, the diameter of the supporting device is D, the distance between the bottom surface of the gas injection device and the top surface of the substrate is H, the ratio of D to L1 is 1.5:1~16:1, and the ratio of D to H is 1.875:1~160:

1.

10. The method for manufacturing a compound semiconductor according to claim 9, wherein: L1 is 50~100 mm, H is 5~80 mm.

11. The method for manufacturing a compound semiconductor according to claim 1, wherein: N is a positive integer greater than or equal to 2 and less than or equal to 4.

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