Gallium oxide semiconductor material based on structured substrate and growth method thereof

Abstract

The invention relates to the technical field of semiconductors, in particular to a gallium oxide semiconductor material based on a structured substrate and a growth method of the gallium oxide semiconductor material. According to the gallium oxide semiconductor material growth method based on the structured substrate, a GaN buffer layer is grown on the surface of a sapphire substrate or a silicon substrate through growth of a GaN nucleating layer, and then high-temperature recrystallization is performed to form an isolated island-shaped GaN nucleating layer; the method comprises the following steps of: growing a discrete island-shaped structure, growing a composite buffer layer, performing high-temperature annealing on a GaN nucleating layer in the presence of oxygen, oxidizing the surface of the discrete island-shaped structure, growing gallium oxide, growing a gallium oxide nucleating layer on the surface of a structured composite buffer layer structure, and growing an epitaxial thin film. Lattice mismatch and thermal expansion coefficient difference can be effectively reduced, dislocation defects are remarkably reduced, a high-quality gallium oxide epitaxial layer is obtained, and the crystal structure quality and performance of the material are improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular, to a gallium oxide semiconductor material based on a structured substrate and a growth method thereof. Background Art

[0002] As a new type of wide-bandgap semiconductor material, gallium oxide (Ga2O3) has the advantages of a large bandgap, a high breakdown field strength, and a large Baliga figure of merit, and has broad application prospects in the fields of power electronic devices, deep ultraviolet optoelectronic devices, etc. However, the growth of gallium oxide single crystal materials is difficult, and the dislocation density is high, which severely restricts the improvement of their device performance.

[0003] At present, the epitaxial growth of gallium oxide thin films mainly adopts two methods: homoepitaxy and heteroepitaxy. Homoepitaxy needs to be carried out on a gallium oxide single crystal substrate, with high costs; heteroepitaxy, on the other hand, faces problems such as large lattice mismatch and large differences in thermal expansion coefficients, resulting in poor quality of the epitaxial layer and high dislocation density.

[0004] In addition, although the method of using a patterned substrate is expected to improve the quality of the epitaxial layer, it still faces a series of problems in practical applications. For example, the patterned structure on the substrate surface may cause uneven nucleation of the gallium oxide layer during the growth process, affecting the thickness uniformity and crystal quality of the thin film. Moreover, the processing technology of the patterned substrate is complex and costly, further restricting its large-scale application. Therefore, how to solve the related problems and improve the quality of the gallium oxide epitaxial layer has become one of the bottlenecks restricting the wide application of gallium oxide materials. At present, there is an urgent need to provide a new growth method for gallium oxide semiconductor materials. Summary of the Invention

[0005] In order to solve the above technical problems, the present invention provides a gallium oxide semiconductor material based on a structured substrate and a growth method thereof. The growth method of the gallium oxide semiconductor material of the present invention can effectively reduce the lattice mismatch and the difference in thermal expansion coefficients through an optimized growth method, significantly reduce dislocation defects, obtain a high-quality gallium oxide epitaxial layer, and improve the crystal structure quality and performance of the material.

[0006] In a first aspect, the present invention provides a method for growing gallium oxide semiconductor materials based on a structured substrate. By growing a GaN nucleation layer, a GaN buffer layer is grown on the surface of a sapphire substrate or a silicon substrate, and then high-temperature recrystallization is performed to form an isolated island-like GaN nucleation layer. Then, a composite buffer layer is grown. The GaN nucleation layer is annealed at high temperature in the presence of oxygen, and the surface of the discrete island-like structure is oxidized. Finally, gallium oxide is grown, and a gallium oxide nucleation layer and an epitaxial film are grown on the surface of the structured composite buffer layer structure. By optimizing the method for growing gallium oxide semiconductor materials, the lattice mismatch and the difference in thermal expansion coefficients can be effectively reduced, dislocation defects can be significantly reduced, a high-quality gallium oxide epitaxial layer can be obtained, and the crystal structure quality and performance of the material can be improved.

[0007] Specifically, the method for growing gallium oxide semiconductor materials based on a structured substrate includes: 1) Growth of the GaN nucleation layer: A GaN buffer layer is grown on the surface of a sapphire substrate or a silicon substrate, and then high-temperature recrystallization is performed to obtain an isolated island-like GaN nucleation layer.

[0008] 2) Preparation of the composite buffer layer: The GaN nucleation layer is annealed at high temperature in the presence of oxygen, and the surface of the discrete island-like structure is oxidized to obtain a structured composite buffer layer structure.

[0009] 3) Growth of the gallium oxide nucleation layer: A gallium oxide nucleation layer is grown on the surface of the structured composite buffer layer structure.

[0010] 4) Growth of the gallium oxide epitaxial layer: A gallium oxide epitaxial layer is grown on the surface of the gallium oxide nucleation layer.

[0011] Preferably, in step 1), the horizontal direction of the GaN crystal nucleus structure particles in the GaN nucleation layer is 0.1 - 5 μm, and the vertical direction is 0.1 - 1 μm.

[0012] Preferably, in step 1), the thickness of the GaN buffer layer is 10 - 500 nm.

[0013] Preferably, in step 2), the surface of the structured composite buffer layer structure is an oxidized GaN layer.

[0014] More preferably, the thickness of the oxidized GaN layer is 1 - 100 nm.

[0015] More preferably, the thickness of the oxidized GaN layer is 50 - 100 nm.

[0016] Preferably, the growth methods in steps 1), 3), and 4) include metalorganic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), pulsed laser deposition (PLD), or hydride vapor phase epitaxy (HVPE).

[0017] Preferably, in step 1), the growth method of the GaN buffer layer includes metal organic chemical vapor deposition (MOCVD), hydride vapor phase epitaxy (HVPE), or physical vapor deposition (PVD); the growth temperature is 500 - 650 °C, the growth pressure is 30000 - 70000 Pa, and the flow rate of the gallium source material is 60 - 120 sccm.

[0018] More preferably, in step 1), the temperature of the high-temperature recrystallization is 1050 - 1100 °C.

[0019] More preferably, in step 2), the treatment temperature of the composite buffer layer is 900 - 1100 °C, the chamber pressure is 30000 - 70000 Pa, and the oxygen flow rate is 1000 - 50000 sccm.

[0020] More preferably, in step 3), the growth temperature of the gallium oxide nucleation layer grown by the metal organic chemical vapor deposition method is 600 - 900 °C, the growth pressure is 80 - 120 Torr, and the flow rate of the source material is 90 - 120 sccm.

[0021] More preferably, in step 4), the growth temperature of the gallium oxide epitaxial layer grown by the hydride vapor phase epitaxy method is 650 - 850 °C, the growth pressure is 500 - 700 Torr, and the Ga / O precursor ratio is 0.1 - 0.2.

[0022] In a second aspect, the present invention provides a gallium oxide semiconductor material obtained by the above-described method for growing a gallium oxide semiconductor material based on a structured substrate.

[0023] The beneficial effects of the present invention are at least as follows: By introducing an in-situ composite structured buffer layer structure on the substrate, the present invention greatly simplifies the problems of complex process and high cost caused by high-precision lithography and etching required for conventional patterned substrates, and the local statistical fluctuations of the in-situ structured composite substrate avoid the anisotropic stress caused by periodic patterning to a certain extent, which can effectively reduce the lattice mismatch and the difference in thermal expansion coefficient between the gallium oxide epitaxial layer and the substrate, thereby reducing the generation of dislocation defects and improving the quality of the epitaxial layer; by optimizing the growth process of the nucleation layer, the nucleation and growth processes of the gallium oxide epitaxial layer can be further regulated to obtain a high-quality gallium oxide semiconductor material. Detailed Embodiments

[0024] To make the objectives, technical solutions and advantages of the present invention clearer, the technical solutions in the present invention will be clearly and completely described below. Apparently, the described embodiments are some but not all of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without any creative work belong to the scope of protection of the present invention.

[0025] In the present invention, the endpoints and any values in the disclosed ranges are not limited to the exact ranges or values. These ranges or values should be understood to include values close to these ranges or values. For numerical ranges, between the endpoint values of each range, between the endpoint values of each range and individual point values, and between individual point values, they can be combined with each other to obtain one or more new numerical ranges, and these numerical ranges should be regarded as specifically disclosed in the present invention.

[0026] For those not specified with specific technologies or conditions in the embodiments of the present invention, they are carried out according to the technologies or conditions described in the literature in this field or according to the product specifications. For those devices, instruments, reagents, etc. not specified with the manufacturer, they are all conventional products that can be obtained through regular channels. The raw materials and reagents in the embodiments of the present invention are all purchased through commercial channels.

[0027] A method for growing a gallium oxide semiconductor material based on a structured substrate provided by some embodiments of the present invention includes: 1) Growth of a GaN nucleation layer: A GaN buffer layer is grown on the surface of a sapphire substrate or a silicon substrate, and then high-temperature recrystallization is performed to obtain an isolated island-shaped GaN nucleation layer.

[0028] 2) Preparation of a composite buffer layer: The GaN nucleation layer is subjected to high-temperature annealing treatment in the presence of oxygen, and the surface of the discrete island structure is oxidized to obtain a structured composite buffer layer structure.

[0029] 3) Growth of a gallium oxide nucleation layer: A gallium oxide nucleation layer is grown on the surface of the structured composite buffer layer structure.

[0030] 4) Growth of a gallium oxide epitaxial layer: A gallium oxide epitaxial layer is grown on the surface of the gallium oxide nucleation layer.

[0031] Embodiments of the present invention construct an optimized growth process for gallium oxide semiconductor materials. The method for growing gallium oxide semiconductor materials based on a structured substrate forms a nucleation layer by growing a GaN buffer layer and performing annealing treatment, providing a basic structure for subsequent growth and effectively dispersing stress. The structured composite buffer layer obtained by high-temperature annealing can reduce lattice mismatch and differences in thermal expansion coefficients, and reduce dislocation defects. Subsequently, a gallium oxide nucleation layer and an epitaxial layer are grown to further ensure the integrity of the material and the quality of the crystal structure. By introducing an in-situ structured composite buffer layer, the present invention avoids lattice mismatch and stress problems in the heteroepitaxial growth of gallium oxide and improves the quality of the epitaxial layer. In particular, through the growth of the GaN nucleation layer: a GaN buffer layer is grown on the surface of a sapphire substrate or a silicon substrate, and then high-temperature recrystallization is performed to form an isolated island-like GaN nucleation layer; growth of the composite buffer layer: the GaN nucleation layer is subjected to high-temperature annealing in the presence of oxygen, and the surface of the discrete island-like structure is oxidized to obtain a structured composite buffer layer structure; growth of gallium oxide: a gallium oxide nucleation layer and an epitaxial film are grown on the surface of the structured composite buffer layer structure. This optimized method can significantly reduce lattice mismatch and differences in thermal expansion coefficients, while reducing dislocation defects, and significantly improve the quality of the gallium oxide epitaxial layer.

[0032] As a preferred embodiment, in step 1), the horizontal dimension of the GaN crystal nucleus structure particles in the GaN nucleation layer is 0.1 - 5 μm, and the vertical dimension is 0.1 - 1 μm.

[0033] In embodiments of the present invention, the above-mentioned structural parameter regulation can be achieved by using conventional processes and parameter controls in the art (such as temperature, gas flow rate, and pressure).

[0034] In a further preferred embodiment, the horizontal dimension of the GaN crystal nucleus structure particles in the GaN nucleation layer is 0.5 - 4 μm, and the vertical dimension is 0.2 - 0.8 μm.

[0035] As a preferred embodiment, in step 1), the thickness of the GaN buffer layer is 10 - 500 nm. For example, 10, 20, 50, 80, 100, 120, 150, 200, 280, 300, 320, 350, 400, 450, 500 nm, etc.

[0036] In a further preferred embodiment, in step 1), the thickness of the GaN buffer layer is 100 - 500 nm.

[0037] As a preferred embodiment, in step 2), the surface of the structured composite buffer layer structure is an oxidized GaN layer.

[0038] In a further preferred embodiment, the thickness of the oxidized GaN layer is 1 - 100 nm.

[0039] In the embodiment of the present invention, the structure of the structured composite buffer layer includes an unoxidized GaN layer and an oxidized GaN layer covering the unoxidized GaN layer. The in-situ high-temperature oxidation adopted in the present invention is carried out in an air or oxygen atmosphere. At high temperature, the N atoms on the surface of the GaN nucleation layer are replaced by O atoms to form gallium oxide. By controlling the conditions of high-temperature annealing in oxygen, only the surface layer of GaN is oxidized while the bottom GaN is retained. The depth of the oxidized GaN layer is between 1 - 100 nm, and the rest is the unoxidized GaN layer, forming a Ga2O3 / GaN structured composite buffer layer.

[0040] In a further preferred embodiment, the thickness of the oxidized GaN layer is 50 - 100 nm.

[0041] As a preferred embodiment, the thickness ratio of the oxidized GaN layer to the structured composite buffer layer structure is 1:(2 - 10).

[0042] In the embodiment of the present invention, by setting the preferred thickness, the synergistic effect of each layer of the gallium oxide semiconductor material can be better exerted, the defects caused by the thermal expansion and lattice mismatch of heteroepitaxy can be more effectively regulated, the nucleation process of the gallium oxide epitaxial layer can be more effectively optimized, the dislocation defects can be reduced, and the quality of the material and the device performance of the epitaxial structure can be improved.

[0043] As a preferred embodiment, the growth methods in steps 1), 3) and 4) include metalorganic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), pulsed laser deposition (PLD) or hydride vapor phase epitaxy (HVPE). In the embodiment of the present invention, each layer can be grown by conventional methods in the art.

[0044] As a preferred embodiment, in step 1), the high-temperature in-situ annealing parameters include temperature and oxygen or air flow rate. In the embodiment of the present invention, randomly distributed GaN nucleation structure particles are formed through a recrystallization mechanism, such as controlling the particle size of recrystallization by controlling temperature, gas flow rate and pressure.

[0045] As a preferred embodiment, in step 1), the growth method of the GaN buffer layer includes metalorganic chemical vapor deposition (MOCVD), hydride vapor phase epitaxy (HVPE) or physical vapor deposition (PVD); the growth method of the GaN buffer layer adopts MOCVD. Further preferred embodiment, in step 1), the growth method of the GaN buffer layer uses MOCVD, and the process parameters include temperature, pressure, ammonia flow rate, trimethylgallium flow rate, and growth time, and conventional parameters in the art can be used. Preferably, the growth temperature is 500 - 650 °C, the growth pressure is 30000 - 70000 Pa, and the flow rate of the gallium source material is 60 - 120 sccm.

[0046] Further preferred embodiment, in step 1), the temperature of the high-temperature recrystallization is 1050 - 1100 °C.

[0047] Further preferred embodiment, in step 2), the treatment temperature of the composite buffer layer is 900 - 1100 °C, the chamber pressure is 30000 - 70000 Pa, and the oxygen flow rate is 1000 - 50000 sccm.

[0048] Further preferred embodiment, in step 3), the growth temperature for growing the gallium oxide nucleation layer by metal-organic chemical vapor deposition method is 600 - 900 °C, the growth pressure is 80 - 120 Torr, and the flow rate of the source material is 90 - 120 sccm. In the embodiment of the present invention, the quality of the nucleation layer is optimized by process parameter regulation, which can better interact with other layers and is more conducive to growing a high-quality gallium oxide epitaxial layer.

[0049] Further preferred embodiment, in step 4), the growth temperature for growing the gallium oxide epitaxial layer by hydride vapor phase epitaxy method is 650 - 850 °C, the growth pressure is 500 - 700 Torr, and the Ga / O precursor ratio is 0.1 - 0.2.

[0050] In the embodiment of the present invention, the structure of the in-situ structured composite buffer layer is introduced, which can effectively avoid the problems of lattice mismatch and large difference in thermal expansion coefficient faced by the heteroepitaxial growth of gallium oxide, and avoid the anisotropic stress caused by periodic patterning, better reduce the lattice mismatch and thermal expansion coefficient difference between the gallium oxide epitaxial layer and the substrate, reduce dislocation defects, and improve the quality of the epitaxial layer; by further optimizing the growth process and parameters, the quality of each layer is improved, and the synergistic effect is exerted, more effectively reducing the lattice mismatch and thermal expansion coefficient difference between the gallium oxide epitaxial layer and the substrate, reducing dislocation defects, and improving the quality of the epitaxial layer. The optimized growth process of the nucleation layer can be further regulated.

[0051] As a preferred embodiment, in step 3), the growth temperature for growing the gallium oxide nucleation layer by metal-organic chemical vapor deposition method is 600 ~ 900 °C, the growth pressure is 80 ~ 120 Torr, and the flow rate of the source material is 90 ~ 120 sccm. In the embodiment of the present invention, the quality of the nucleation layer is optimized by process parameter regulation. For example, the growth temperature is 800 ± 50 °C, the growth pressure is 100 ± 15 Torr, and the flow rate of the source material is 100 ± 10 sccm, etc.

[0052] As a preferred embodiment, step 1) further includes cleaning and surface treating the sapphire substrate or silicon substrate. The substrate cleaning and surface treatment methods of the present invention can be processed by common methods in the art. In the embodiments of the present invention, standard semiconductor substrate cleaning processes can be used, such as cleaning with 511 solution, etc.

[0053] In the embodiments of the present invention, the introduction of the structure of the in-situ composite structured buffer layer can effectively avoid the problems of lattice mismatch and large difference in thermal expansion coefficient faced by the heteroepitaxial growth of gallium oxide, and avoid the anisotropic stress caused by periodic patterning, better reducing the lattice mismatch and thermal expansion coefficient difference between the gallium oxide epitaxial layer and the substrate, reducing dislocation defects, and improving the quality of the epitaxial layer. The present invention optimizes the growth process and parameters, which can more effectively reduce the lattice mismatch and thermal expansion coefficient difference between the gallium oxide epitaxial layer and the substrate, reduce dislocation defects, and improve the quality of the epitaxial layer. The optimized nucleation layer growth process can further regulate the nucleation and growth process of the gallium oxide epitaxial layer to obtain high-quality gallium oxide semiconductor materials.

[0054] The embodiments of the present invention provide the gallium oxide semiconductor material obtained by the above-mentioned gallium oxide semiconductor material growth method based on a structured substrate.

[0055] In some embodiments of the present invention, by introducing the structure of the in-situ composite structured buffer layer on the substrate, the problems of complex process and high cost caused by high-precision lithography and etching required for conventional patterned substrates are greatly simplified, and the local statistical fluctuations of the in-situ structured composite substrate avoid the anisotropic stress caused by periodic patterning to a certain extent, which can effectively reduce the lattice mismatch and thermal expansion coefficient difference between the gallium oxide epitaxial layer and the substrate, thereby reducing the generation of dislocation defects and improving the quality of the epitaxial layer; by optimizing the nucleation layer growth process, the nucleation and growth process of the gallium oxide epitaxial layer can be further regulated to obtain high-quality gallium oxide semiconductor materials.

[0056] The present invention also provides the following specific examples.

[0057] Example 1 1. Substrate preparation: Select a sapphire substrate and perform cleaning and surface treatment.

[0058] 2. GaN nucleation layer growth: A gallium nitride buffer layer with a thickness of 100 nm was grown on a sapphire substrate by MOCVD. The growth temperature was 500 - 650 °C, the growth pressure was 30,000 - 70,000 Pa, and the flow rate of the gallium source material was 60 - 120 sccm. Then, high-temperature in-situ annealing (high-temperature recrystallization) was carried out at a temperature of 1050 - 1100 °C to obtain an isolated island-like GaN nucleation layer. Randomly distributed GaN crystal nucleus structure particles were formed through the recrystallization mechanism, and the particle size of the recrystallization was regulated: 0.5 - 4 μm in the horizontal direction and 0.2 - 0.8 μm in the vertical direction.

[0059] 3. Preparation of the composite (structured) buffer layer: After recrystallization, the GaN nucleation layer was subjected to in-situ high-temperature oxidation. In an oxygen atmosphere, N atoms on the surface of the GaN nucleation layer were replaced by O atoms at high temperature to form gallium oxide. The surface of the discrete island-like structure was oxidized at a temperature of 900 - 1100 °C, the chamber pressure was 30,000 - 70,000 Pa, and the oxygen flow rate was 1000 - 50,000 sccm. By controlling the conditions of high-temperature annealing with oxygen, only the surface layer of GaN was oxidized while the bottom GaN was retained. The depth of the oxidized GaN layer was between 50 - 100 nm, forming a Ga2O3 / GaN composite structured buffer layer (structured composite buffer layer structure).

[0060] 4. Growth of the gallium oxide nucleation layer: A gallium oxide nucleation layer was grown on the surface of the Ga2O3 / GaN composite structured buffer layer by MOCVD. The growth temperature was 800 ± 10 °C, the growth pressure was 100 ± 10 Torr, and the flow rate of the source material was 100 ± 10 sccm.

[0061] 5. Growth of the gallium oxide epitaxial layer: The gallium oxide epitaxial layer was continuously grown on the gallium oxide nucleation layer. The gallium oxide epitaxial layer was grown by HVPE. The growth temperature was 800 - 850 °C, the growth pressure was 500 - 600 Torr, and the Ga / O precursor ratio was 0.1 - 0.15, obtaining high-quality gallium oxide semiconductor materials.

[0062] Comparative Example 1 The method of Example 1 was used, with the difference that a sapphire substrate was selected and subjected to cleaning and surface treatment.

[0063] A gallium nitride buffer layer with a thickness of 100 nm was grown on a sapphire substrate by MOCVD.

[0064] Photolithography and etching were carried out on the surface of the gallium nitride buffer layer to form a periodic strip-shaped pattern structure. The strip width was 5 μm, the height was 2 μm, and the strip spacing was 1 μm.

[0065] The gallium oxide nucleation layer is grown on the surface of the patterned structure by the MOCVD method, with a growth temperature of 800 °C, a growth pressure of 100 Torr, and a source material flow rate of 100 sccm.

[0066] The gallium oxide epitaxial layer is continuously grown on the nucleation layer to obtain the gallium oxide semiconductor material.

[0067] Comparative Example 2 The method of Example 1 is adopted, with the difference that a silicon substrate is selected and cleaned and surface-treated.

[0068] A silicon nitride buffer layer with a thickness of 200 nm is grown on the silicon substrate by the MBE method. Lithography and etching are performed on the surface of the silicon nitride buffer layer to form a periodic circular pattern structure, with a circular diameter of 3 μm, a height of 1 μm, and a circular spacing of 0.5 μm.

[0069] The gallium oxide nucleation layer is grown on the surface of the patterned structure by the PLD method, with a growth temperature of 700 °C, a growth pressure of 10 -6 Torr, and a laser energy of 200 mJ.

[0070] The gallium oxide epitaxial layer is continuously grown on the nucleation layer to obtain the gallium oxide semiconductor material.

[0071] The embodiments of the present invention can effectively solve the above problems, significantly reduce the lattice mismatch and the difference in thermal expansion coefficient, and at the same time reduce dislocation defects, improve the quality of the epitaxial layer, and the quality of the epitaxial layers in Comparative Examples 1-2 is significantly worse than that of the embodiments of the present invention.

[0072] Unless otherwise specified, all numbers appearing in the specification and claims of this application, such as numerical values of temperature and time, should not be construed as absolute exact values. Due to the standard deviation of the measurement technology, there will inevitably be certain experimental errors in the measured values.

[0073] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for growing gallium oxide semiconductor material based on a structured substrate, characterized in that: include: 1) GaN nucleation layer growth: grow a GaN buffer layer on the surface of a sapphire substrate or a silicon substrate, and then recrystallize it at high temperature to obtain an isolated island-shaped GaN nucleation layer; 2) Preparation of composite buffer layer: The GaN nucleation layer is subjected to high temperature annealing treatment in the presence of oxygen, and the surface of the discrete island structure is oxidized to obtain a structured composite buffer layer structure; 3) Growth of a gallium oxide nucleation layer: growing a gallium oxide nucleation layer on the surface of the structured composite buffer layer structure; 4) Growth of a gallium oxide epitaxial layer: growing a gallium oxide epitaxial layer on the surface of the gallium oxide nucleation layer.

2. The method for growing gallium oxide semiconductor material based on a structured substrate according to claim 1, characterized in that: In step 1), the GaN crystal nucleus structure particles in the GaN nucleation layer have a horizontal dimension of 0.1-5 um and a vertical dimension of 0.1-1 um; And / or, in step 1), the thickness of the GaN buffer layer is 10-500 nm.

3. The method for growing gallium oxide semiconductor material based on a structured substrate according to claim 2, characterized in that: In step 2), the surface of the structured composite buffer layer structure is an oxidized GaN layer; And / or, the thickness of the oxidized GaN layer is 1-100 nm.

4. The method for growing gallium oxide semiconductor material based on a structured substrate according to claim 1, characterized in that: The growth methods in steps 1), 3) and 4) include metal organic chemical vapor deposition, molecular beam epitaxy, pulsed laser deposition or hydride vapor phase epitaxy.

5. The method for growing gallium oxide semiconductor material based on a structured substrate according to claim 4, characterized in that: In step 1), the growth method of the GaN buffer layer includes metal organic chemical vapor deposition, hydride vapor phase epitaxy or physical vapor deposition; the growth temperature is 500-650° C., the growth pressure is 30000-70000 Pa, and the gallium source material flow rate is 60-120 sccm.

6. The method for growing gallium oxide semiconductor material based on a structured substrate according to claim 5, characterized in that: In step 1), the high temperature recrystallization temperature is 1050-1100°C.

7. The method for growing gallium oxide semiconductor material based on a structured substrate according to any one of claims 1 to 6, characterized in that: In step 2), the processing temperature of the composite buffer layer is 900-1100° C., the chamber pressure is 30000-70000 Pa, and the oxygen flow rate is 1000-50000 sccm.

8. The method for growing gallium oxide semiconductor material based on a structured substrate according to any one of claims 1 to 6, characterized in that: In step 3), the gallium oxide nucleation layer is grown by metal organic chemical vapor deposition at a growth temperature of 600-900° C., a growth pressure of 80-120 Torr, and a source material flow rate of 90-120 sccm.

9. The method for growing gallium oxide semiconductor material based on a structured substrate according to any one of claims 1 to 6, characterized in that: In step 4), the gallium oxide epitaxial layer is grown by hydride vapor phase epitaxy at a growth temperature of 650-850° C., a growth pressure of 500-700 Torr, and a Ga / O precursor ratio of 0.1-0.

2.

10. The gallium oxide semiconductor material obtained by the gallium oxide semiconductor material growth method based on a structured substrate according to any one of claims 1 to 9.