Device and method for evaluating aging state of bonding wire of IGBT (Insulated Gate Bipolar Translator) module and medium

Abstract

The invention discloses an IGBT module bonding wire aging state evaluation device and method and a medium, and relates to the field of IGBT module aging state evaluation, and the device comprises a device turn-off condition detection module which is used for detecting the turn-off voltage and turn-off current of an IGBT module to determine the current turn-off condition of the IGBT module; the turn-off time detection module and the current drop time detection module are respectively used for detecting the turn-off time and the current drop time of the IGBT module under the current turn-off condition; and the bonding wire aging state evaluation module is used for evaluating the aging state of the bonding wire of the IGBT module according to the turn-off time and the current falling time of the IGBT module under the current turn-off condition. According to the invention, the aging state of the bonding wire of the IGBT module is evaluated based on the turn-off time and the current drop time, and the evaluation accuracy is improved.

Description

Technical Field

[0001] The present application relates to the field of IGBT module aging state assessment, and particularly to an IGBT module bonding wire aging state assessment device, method and medium. Background Art

[0002] As the core device of modern power electronic systems, IGBT modules are widely used in new energy power generation, electric vehicles, industrial frequency conversion and other fields. Its reliability is directly related to the performance and life of the entire system. As a key component connecting the chip and the external circuit in the IGBT module, the bonding wire plays an important role in current transmission and mechanical support. However, during long-term operation, the bonding wire will age due to factors such as temperature cycling, electrical stress, and mechanical vibration, mainly manifested as metal fatigue, interface delamination, increased resistance, etc. In severe cases, it may even cause the bonding wire to break and lead to device failure. Therefore, accurate judgment of the bonding wire aging state is crucial. It can not only provide early warning of potential faults, but also provide a basis for the predictive maintenance of the system, thus avoiding unexpected shutdowns and economic losses. With the development of power electronic devices towards high power density and high reliability, the working environment of IGBT modules is more severe, and the bonding wire aging problem becomes more prominent. However, due to the aging process involving the coupling of multiple physical fields such as electricity, heat, and mechanics, and being easily interfered by temperature fluctuations, how to achieve high-precision and high-reliable IGBT module aging state assessment is still a technical difficulty. Summary of the Invention

[0003] The purpose of the present application is to provide an IGBT module bonding wire aging state assessment device, method and medium, which can improve the accuracy of IGBT module bonding wire aging state assessment.

[0004] To achieve the above purpose, the present application provides the following solutions:

[0005] In the first aspect, the present application provides an IGBT module bonding wire aging state assessment device, including:

[0006] A device turn-off condition detection module, configured to detect the turn-off voltage and turn-off current of the IGBT module, and determine the current turn-off condition of the IGBT module according to the turn-off voltage and turn-off current;

[0007] A turn-off time detection module, configured to detect the turn-off time of the IGBT module under the current turn-off condition;

[0008] A current decay time detection module, configured to detect the current decay time of the IGBT module under the current turn-off condition;

[0009] The bonding wire aging state evaluation module is connected to the device turn-off condition detection module, the turn-off time detection module, and the current decay time detection module, and is used to evaluate the aging state of the bonding wires of the IGBT module according to the turn-off time and the current decay time of the IGBT module under the current turn-off condition.

[0010] In a second aspect, the present application provides an IGBT module bonding wire aging state evaluation method implemented based on the above IGBT module bonding wire aging state evaluation device, including:

[0011] Obtain the turn-off voltage and turn-off current of the IGBT module, and determine the current turn-off condition of the IGBT module according to the turn-off voltage and turn-off current;

[0012] Obtain the turn-off time of the IGBT module under the current turn-off condition;

[0013] Obtain the current decay time of the IGBT module under the current turn-off condition;

[0014] Evaluate the aging state of the bonding wires of the IGBT module according to the turn-off time and the current decay time of the IGBT module under the current turn-off condition.

[0015] In a third aspect, the present application provides a computer-readable storage medium, on which a computer program is stored, and when the computer program is executed by a processor, the above IGBT module bonding wire aging state evaluation method is implemented.

[0016] According to the specific embodiments provided by the present application, the following technical effects are disclosed in the present application:

[0017] The present application provides an IGBT module bonding wire aging state evaluation device, method and medium. Considering that the fluctuation of the junction temperature will mask the change of characteristic parameters caused by the aging of the bonding wires, resulting in a risk of misjudgment. Especially in complex working conditions, the temperature change and the aging effect are coupled with each other, making it difficult for the aging judgment method based on a single characteristic to achieve high-precision evaluation. Therefore, the present application uses the turn-off time of the IGBT module, which is affected by both the junction temperature and the aging of the bonding wires, while the current decay time is only affected by the junction temperature and not by the aging of the bonding wires, to judge the aging of the bonding wires of the IGBT module, improving the accuracy of the bonding wire aging evaluation. Description of the Drawings

[0018] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings required for use in the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0019] Figure 1 Schematic structural diagram of an IGBT module bonding wire aging state evaluation device provided by an embodiment of the present application;

[0020] Figure 2 Schematic structural diagram of a turn-off time detection circuit provided by an embodiment of the present application;

[0021] Figure 3 Schematic structural diagram of a current fall time detection circuit provided by an embodiment of the present application;

[0022] Figure 4 Schematic flow diagram of an IGBT module bonding wire aging state evaluation method provided by an embodiment of the present application. Detailed implementation manners

[0023] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present application.

[0024] To make the above objects, features, and advantages of the present application more obvious and understandable, the present application will be further described in detail below in conjunction with the accompanying drawings and specific implementation manners.

[0025] Currently, the aging judgment of IGBT module bonding wires mainly relies on electrical parameter monitoring (such as on-state voltage drop, switching characteristics) and thermal imaging technology. The on-state voltage drop method evaluates the state by monitoring the increase in resistance caused by bonding wire aging, while the switching characteristic method uses the change in parasitic parameters caused by aging for judgment. However, these methods are significantly affected by temperature fluctuations in practical applications. The change in the junction temperature of the IGBT module will directly change the carrier mobility and resistivity of the semiconductor material, resulting in the drift of electrical parameters such as on-state voltage drop, thereby interfering with the extraction of aging characteristics. In addition, although thermal imaging technology can intuitively reflect the temperature distribution of the device, the fluctuation of the junction temperature will mask the local temperature rise difference caused by bonding wire aging, further increasing the risk of misjudgment. Especially in complex working conditions, the temperature change and aging effect are coupled with each other, making it difficult for the aging judgment method based on a single feature to achieve high-precision evaluation. Therefore, how to effectively decouple the temperature effect and aging characteristics has become the focus and difficulty of current research. In this regard, the present application proposes an IGBT module bonding wire aging state evaluation device, specifically an IGBT module bonding wire aging state evaluation device based on turn-off time and current fall time, as Figure 1 shown, including the following modules.

[0026] The device turn-off condition detection module is used to detect the turn-off voltage and turn-off current of the IGBT module, and determine the current turn-off condition of the IGBT module according to the turn-off voltage and turn-off current.

[0027] The turn-off time detection module is used to detect the turn-off time of the IGBT module under the current turn-off condition.

[0028] The current fall time detection module is used to detect the current fall time of the IGBT module under the current turn-off condition.

[0029] The bonding wire aging state evaluation module is connected (communicatively connected) to the device turn-off condition detection module, the turn-off time detection module, and the current fall time detection module, and is used to evaluate the aging state of the bonding wire of the IGBT module according to the turn-off time and current fall time of the IGBT module under the current turn-off condition.

[0030] In this application, by measuring the turn-off time and current fall time during the operation of the IGBT module, the real-time monitoring and quantitative evaluation of the aging state of the bonding wire are realized, which can accurately reflect the aging degree of the bonding wire. This evaluation method has the advantages of high accuracy, real-time monitoring, and strong adaptability, and is applicable to IGBT module devices with different working condition parameters. Through the evaluation device of this application, operators can timely discover potential fault hazards, reduce the maintenance cost of the system, and improve the reliability and stability of the system. The proposed evaluation device of this application provides new ideas and methods for the health monitoring and evaluation of IGBT modules, which helps to promote the innovation and development of the health monitoring technology of power electronic devices.

[0031] In another exemplary embodiment of this application, the IGBT module bonding wire aging state evaluation device further includes an aging model storage module; the aging model storage module is used to store the aging states of the bonding wires of different IGBT modules and the corresponding changes in turn-off time.

[0032] The aging model storage module includes a data storage unit and a data output unit. The data storage unit stores the aging states of the bonding wires of different IGBT modules and the corresponding changes in turn-off time. The data stored in the data storage unit is determined by experimental tests in advance, and the specific process of obtaining the stored data is as follows:

[0033] (1) Determine the test conditions, including the turn-off voltage, turn-off current, etc. By measuring the IGBT turn-off time and current fall time models at different junction temperatures, the turn-off time model and current fall time model corresponding to the IGBT junction temperature in the healthy state can be obtained, as shown in the following formulas.

[0034] Current fall time = f(junction temperature) (1)

[0035] Healthy turn-off time = f(junction temperature) (2)

[0036] (2) Conduct a bonding wire aging experiment on the IGBT module, and measure the IGBT turn-off time and current fall time models at different junction temperatures again. The IGBT turn-off time model after bonding wire aging and junction temperature change can be obtained, as shown in the following formula.

[0037] Turn-off time after bonding wire aging = f(junction temperature, bonding wire aging) (3)

[0038] Since the current fall time is not affected by bonding wire aging, the model of junction temperature and current fall time remains unchanged.

[0039] (3) Subtract the model corresponding to formula (2) from the model corresponding to formula (3) to obtain the change in turn-off time caused by bonding wire aging. Repeatedly increasing the bonding wire aging experiment can obtain the change in turn-off time under different degrees of bonding wire aging, that is, different bonding wire aging models, as shown in the following formula.

[0040] Degree of bonding wire aging = turn-off time after bonding wire aging - healthy turn-off time (4)

[0041] In another exemplary embodiment of the present application, the turn-off time of the IGBT module is affected by both the junction temperature and the bonding wire aging, while the current fall time is only affected by the junction temperature and not by the bonding wire aging. Therefore, the bonding wire aging of the IGBT module can be judged according to this relationship. Therefore, the bonding wire aging state evaluation module includes a junction temperature determination unit, a healthy turn-off time calculation unit, a turn-off time change amount calculation unit, and an aging state evaluation unit.

[0042] The junction temperature determination unit is used to determine the current junction temperature of the IGBT module according to the current fall time of the IGBT module under the current turn-off condition.

[0043] The healthy turn-off time calculation unit is used to calculate the healthy IGBT turn-off time in theory according to the current junction temperature of the IGBT module.

[0044] The turn-off time change amount calculation unit is used to calculate the turn-off time change amount according to the turn-off time of the IGBT module under the current turn-off condition and the healthy IGBT turn-off time. Subtract the healthy IGBT turn-off time in theory from the actually measured turn-off time, and the difference is the change in turn-off time caused by bonding wire aging.

[0045] The aging state evaluation unit is used to compare the turn-off time change amount with the turn-off time change amount stored in the aging model storage module to determine the bonding wire aging state of the current IGBT module.

[0046] In another exemplary embodiment of the present application, the device turn-off condition detection module includes: a voltage sensor, a current sensor, a conditioning circuit, and a data output unit.

[0047] The voltage sensor is used to detect the collector-emitter voltage when the IGBT module turns off. This voltage sensor does not need to record the voltage during the entire IGBT turn-off process all the time, but only needs to record the stable value after the voltage overshoot during the IGBT turn-off process.

[0048] The current sensor is used to detect the turn-off current when the IGBT module turns off. The current sensor also does not need to record the current during the entire IGBT turn-off process all the time, but only needs to record the maximum value before the IGBT turn-off current starts to decline.

[0049] The conditioning circuit is used to convert the collector-emitter voltage and the turn-off current into digital signals.

[0050] The data output unit is used to transmit the digital signals output by the conditioning circuit to the bonding wire aging state evaluation module.

[0051] In another exemplary embodiment of the present application, the turn-off time detection module includes: a turn-off time detection circuit; the turn-off time detection module further includes a digital-to-analog conversion unit and a data output unit. The digital-to-analog conversion unit is used to convert the output of the turn-off time detection circuit into a digital signal, and the data output unit transmits the digital signal to the bonding wire aging state evaluation module.

[0052] The turn-off time detection circuit includes a first voltage division circuit, a first voltage follower circuit, a first voltage comparison circuit, and a pulse synthesis circuit.

[0053] The first voltage division circuit is used to control the gate-emitter voltage V GE and the collector-emitter voltage V CE of the IGBT module within the power supply voltage of the first voltage follower circuit and output them to the first voltage follower circuit.

[0054] The first voltage follower circuit is used to buffer the signal transmission between the first voltage division circuit and the first voltage comparison circuit, isolate the mutual influence between the front and rear stage circuits, reduce the interference to the voltage signal, and output the received gate-emitter voltage and collector-emitter voltage to the first voltage comparison circuit.

[0055] The first voltage comparison circuit is used to compare the gate-emitter voltage and the collector-emitter voltage with their respective preset reference voltages (reference voltage VTH1 and reference voltage VTH2) respectively to obtain a first comparison result. The reference voltage VTH1 is set to 90% of the driving positive voltage, and the reference voltage VTH2 is set to 10% of the bus voltage VDC.

[0056] The pulse synthesis circuit is used to synthesize a pulse signal according to the first comparison result; the width of the pulse signal is the turn-off time of the IGBT module.

[0057] In another exemplary embodiment of the present application, as Figure 2 shown, the voltage dividing circuit includes a first resistor unit R1, a second resistor unit R2, a third resistor unit R3, and a fourth resistor unit R4; the voltage follower circuit includes a first operational amplifier and a second operational amplifier; the voltage comparison circuit includes a first voltage comparator and a second voltage comparator. Each of the first resistor unit to the fourth resistor unit includes at least one resistor, and when multiple resistors are included, they are formed by series and / or parallel connection of multiple resistors.

[0058] One ends of the first resistor unit and the third resistor unit are respectively connected to the gate and the collector of the IGBT module; the other end of the first resistor unit is respectively connected to one end of the second resistor unit and the positive electrode of the first operational amplifier; the other end of the second resistor unit is grounded; the other end of the third resistor unit is respectively connected to one end of the fourth resistor unit and the positive electrode of the second operational amplifier; the other end of the fourth resistor unit is grounded.

[0059] The output terminals of the first operational amplifier and the second operational amplifier are respectively connected to the positive electrodes of the first voltage comparator and the second voltage comparator; the output terminals of the first voltage comparator and the second voltage comparator are connected to the input terminal of the pulse synthesis circuit. The negative electrodes of the first voltage comparator and the second voltage comparator are respectively connected to the reference voltage VTH1 and the reference voltage VTH2. The pulse synthesis circuit adopts a AND gate structure.

[0060] In another exemplary embodiment of the present application, the current fall time detection module includes: a current fall detection circuit; the current fall time detection module further includes a digital-to-analog conversion unit and a data output unit. The digital-to-analog conversion unit is used to convert the output of the current fall detection circuit into a digital signal, and the data output unit transmits the digital signal to the bonding wire aging state evaluation module.

[0061] The current fall detection circuit includes a second voltage dividing circuit, a second voltage follower circuit, and a second voltage comparison circuit.

[0062] The second voltage dividing circuit is used to divide the induced voltage generated by the parasitic inductance between the Kelvin source and the power source of the IGBT module (corresponding to Figure 3 V in eE)It is controlled within the power supply voltage of the two voltage follower circuits and output to the second voltage follower circuit. There is parasitic inductance between the Kelvin source and the power source. When current flows through the parasitic inductance, an induced voltage will be generated. By detecting the change time of the induced voltage, the current drop time can be deduced inversely.

[0063] The second voltage follower circuit is used to buffer the signal transmission between the second voltage division circuit and the second voltage comparison circuit, and output the received induced voltage to the second voltage comparison circuit.

[0064] The second voltage comparison circuit is used to compare the induced voltage with the corresponding preset reference voltage (reference voltage VTH3) to obtain a second comparison result; the pulse width of the pulse signal of the second comparison result is the current drop time of the IGBT module. The reference voltage VTH3 is set to a relatively small voltage value, such as 1V.

[0065] In another exemplary embodiment of the present application, as Figure 3 shown, the second voltage division circuit includes a fifth resistor unit R5 and a sixth resistor unit R6; the second voltage follower circuit includes a third operational amplifier; the second voltage comparison circuit includes a third voltage comparator. Both the fifth resistor unit and the sixth resistor unit include at least one resistor. When including multiple resistors, they are composed of multiple resistors in series and / or parallel.

[0066] One end of the fifth resistor unit is connected between the Kelvin source and the power source of the IGBT module, the other end of the fifth resistor unit is connected to one end of the sixth resistor unit and the positive electrode of the third operational amplifier; the other end of the sixth resistor unit is grounded; the output end of the third operational amplifier is connected to the positive electrode of the third voltage comparator. The negative electrode of the third voltage comparator is connected to the reference voltage VTH3.

[0067] In another exemplary embodiment of the present application, an IGBT module bond wire aging state evaluation method implemented based on the above IGBT module bond wire aging state evaluation device is proposed. As Figure 4 shown, the IGBT module bond wire aging state evaluation method includes:

[0068] S1: Obtain the turn-off voltage and turn-off current of the IGBT module, and determine the current turn-off condition of the IGBT module according to the turn-off voltage and turn-off current.

[0069] S2: Obtain the turn-off time of the IGBT module under the current turn-off condition.

[0070] S3: Obtain the current drop time of the IGBT module under the current turn-off condition.

[0071] S4: Evaluate the aging state of the bonding wires of the IGBT module based on the turn-off time and current fall time of the IGBT module under the current turn-off condition.

[0072] Specifically, in step S4, to evaluate the aging state of the bonding wires of the IGBT module based on the turn-off time and current fall time of the IGBT module under the current turn-off condition, it specifically includes:

[0073] (1) Determine the current junction temperature of the IGBT module according to the current fall time of the IGBT module under the current turn-off condition.

[0074] (2) Calculate the healthy turn-off time of the IGBT in theory according to the current junction temperature of the IGBT module.

[0075] (3) Calculate the change in turn-off time according to the turn-off time of the IGBT module under the current turn-off condition and the healthy turn-off time of the IGBT.

[0076] (4) Compare the change in turn-off time with the change in turn-off time stored in the aging model storage module to determine the current aging state of the bonding wires of the IGBT module; different aging states of the bonding wires of the IGBT module and the corresponding changes in turn-off time are stored in the aging model storage module.

[0077] For the method disclosed in the embodiment, since it corresponds to the device disclosed in the embodiment, the description is relatively simple. For related parts, refer to the description of the device part.

[0078] In an exemplary embodiment, a computer-readable storage medium is provided, storing a computer program, which when executed by a processor implements the steps in the above method embodiments.

[0079] It should be noted that the user information (including but not limited to user device information, user personal information, etc.) and data (including but not limited to data for analysis, stored data, displayed data, etc.) involved in this application are all information and data authorized by the user or fully authorized by all parties, and the collection, use, and processing of relevant data need to comply with relevant regulations.

[0080] Those of ordinary skill in the art can understand that all or part of the processes in the methods of the above embodiments can be completed by instructing relevant hardware through a computer program. The computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above methods. Among them, any reference to a memory, database, or other medium used in the embodiments provided in the present application can include at least one of non-volatile and volatile memories. Non-volatile memories can include read-only memory (ROM), magnetic tapes, floppy disks, flash memories, optical memories, high-density embedded non-volatile memories, resistive random access memories (ReRAMs), magnetoresistive random access memories (MRAMs), ferroelectric random access memories (FRAMs), phase change memories (PCMs), graphene memories, etc. Volatile memories can include random access memory (RAM) or external cache memories, etc. By way of illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM), etc.

[0081] The databases involved in the embodiments provided in the present application can include at least one of relational databases and non-relational databases. Non-relational databases can include distributed databases based on blockchain, etc., without limitation. The processors involved in the embodiments provided in the present application can be general-purpose processors, central processors, graphics processors, digital signal processors, programmable logics, data processing logics based on quantum computing, etc., without limitation.

[0082] The technical features of the above embodiments can be combined arbitrarily. For the sake of concise description, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered as the scope described in this specification.

[0083] Specific examples are used in this article to elaborate on the principles and implementation manners of the present application. The description of the above embodiments is only used to help understand the method and its core idea of the present application; at the same time, for those of ordinary skill in the art, according to the idea of the present application, there will be changes in the specific implementation manners and application scopes. In summary, the content of this specification should not be construed as a limitation to the present application.

Claims

1. An IGBT module bonding wire aging status assessment device, characterized in that: include: A device shutdown condition detection module is used to detect the shutdown voltage and shutdown current of the IGBT module, and determine the current shutdown condition of the IGBT module according to the shutdown voltage and shutdown current; A turn-off time detection module is used to detect the turn-off time of the IGBT module under the current turn-off condition; A current fall time detection module is used to detect the current fall time of the IGBT module under the current shutdown condition; The bonding wire aging status evaluation module is connected to the device shutdown condition detection module, the shutdown time detection module, and the current fall time detection module, and is used to evaluate the aging status of the bonding wires of the IGBT module according to the shutdown time and current fall time of the IGBT module under the current shutdown condition.

2. The IGBT module bonding wire aging status evaluation device according to claim 1, characterized in that: The IGBT module bonding wire aging state evaluation device further comprises an aging model storage module; the aging model storage module is used to store the aging states of the bonding wires of different IGBT modules and the corresponding off-time changes.

3. The IGBT module bonding wire aging status evaluation device according to claim 2, characterized in that: The bonding wire aging state assessment module includes a junction temperature determination unit, a healthy shutdown time calculation unit, a shutdown time variation calculation unit and an aging state assessment unit; The junction temperature determination unit is used to determine the current junction temperature of the IGBT module according to the current falling time of the IGBT module under the current shutdown condition; The healthy shutdown time calculation unit is used to calculate the healthy IGBT shutdown time under theoretical conditions according to the current junction temperature of the IGBT module; The off-time variation calculation unit is used to calculate the off-time variation according to the off-time of the IGBT module under the current off-time condition and the off-time of a healthy IGBT; The aging state evaluation unit is used to compare the off-time variation with the off-time variation stored in the aging model storage module to determine the current aging state of the bonding wire of the IGBT module.

4. The IGBT module bonding wire aging status evaluation device according to claim 1, characterized in that: The device shutdown condition detection module includes: a voltage sensor, a current sensor, a conditioning circuit and a data output unit; The voltage sensor is used to detect the collector-emitter voltage when the IGBT module is turned off; The current sensor is used to detect the shutdown current when the IGBT module is turned off; The conditioning circuit is used to convert the collector-emitter voltage and the turn-off current into digital signals; The data output unit is used to transmit the digital signal output by the conditioning circuit to the bonding wire aging state evaluation module.

5. The IGBT module bonding wire aging status evaluation device according to claim 1, characterized in that: The off-time detection module comprises: an off-time detection circuit; the off-time detection circuit comprises a first voltage dividing circuit, a first voltage following circuit, a first voltage comparison circuit and a pulse synthesis circuit; The first voltage divider circuit is used to control the gate-emitter voltage and the collector-emitter voltage of the IGBT module to be within the power supply voltage of the first voltage follower circuit and output them to the first voltage follower circuit; The first voltage follower circuit is used to buffer the signal transmission between the first voltage divider circuit and the first voltage comparison circuit, and output the received gate-emitter voltage and collector-emitter voltage to the first voltage comparison circuit; The first voltage comparison circuit is used to compare the gate-emitter voltage and the collector-emitter voltage with their corresponding preset reference voltages to obtain a first comparison result; The pulse synthesis circuit is used to synthesize a pulse signal according to the first comparison result; the width of the pulse signal is the turn-off time of the IGBT module.

6. The IGBT module bonding wire aging status evaluation device according to claim 5, characterized in that: The voltage divider circuit includes a first resistance unit, a second resistance unit, a third resistance unit and a fourth resistance unit; the voltage follower circuit includes a first operational amplifier and a second operational amplifier; the voltage comparison circuit includes a first voltage comparator and a second voltage comparator; the first resistance unit to the fourth resistance unit each include at least one resistor; One end of the first resistor unit and the third resistor unit are respectively connected to the gate and collector of the IGBT module; the other end of the first resistor unit is respectively connected to one end of the second resistor unit and the positive electrode of the first operational amplifier; the other end of the second resistor unit is grounded; the other end of the third resistor unit is respectively connected to one end of the fourth resistor unit and the positive electrode of the second operational amplifier; the other end of the fourth resistor unit is grounded; The output end of the first operational amplifier and the output end of the second operational amplifier are respectively connected to the positive electrode of the first voltage comparator and the positive electrode of the second voltage comparator; the output end of the first voltage comparator and the output end of the second voltage comparator are connected to the input end of the pulse synthesis circuit.

7. The IGBT module bonding wire aging status evaluation device according to claim 1, characterized in that: The current drop time detection module comprises: a current drop detection circuit; the current drop detection circuit comprises a second voltage divider circuit, a second voltage follower circuit and a second voltage comparison circuit; The second voltage divider circuit is used to control the induced voltage generated by the parasitic inductance between the Kelvin source and the power source of the IGBT module to be within the power supply voltage of the second voltage follower circuit and output it to the second voltage follower circuit; The second voltage follower circuit is used for buffering the signal transmission between the second voltage divider circuit and the second voltage comparison circuit, and outputting the received induced voltage to the second voltage comparison circuit; The second voltage comparison circuit is used to compare the induced voltage with the corresponding preset reference voltage to obtain a second comparison result; the pulse width of the pulse signal of the second comparison result is the current falling time of the IGBT module.

8. The IGBT module bonding wire aging status assessment device according to claim 7, characterized in that: The second voltage divider circuit includes a fifth resistance unit and a sixth resistance unit; the second voltage follower circuit includes a third operational amplifier; the second voltage comparison circuit includes a third voltage comparator; the fifth resistance unit and the sixth resistance unit each include at least one resistor; One end of the fifth resistor unit is connected between the Kelvin source and the power source of the IGBT module, and the other end of the fifth resistor unit is connected to one end of the sixth resistor unit and the positive electrode of the third operational amplifier; the other end of the sixth resistor unit is grounded; the output end of the third operational amplifier is connected to the positive electrode of the third voltage comparator.

9. An IGBT module bonding wire aging state assessment method implemented based on the IGBT module bonding wire aging state assessment device according to any one of claims 1 to 8, characterized in that: include: Obtaining the turn-off voltage and turn-off current of the IGBT module, and determining the current turn-off condition of the IGBT module according to the turn-off voltage and turn-off current; Get the shutdown time of the IGBT module under the current shutdown condition; Get the current fall time of the IGBT module under the current shutdown condition; The aging state of the IGBT module bonding wires is evaluated based on the turn-off time and current fall time of the IGBT module under the current turn-off condition.

10. A computer-readable storage medium having a computer program stored thereon, wherein the computer program, when executed by a processor, implements the method for evaluating the aging state of bonding wires of an IGBT module according to claim 9.

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