Ion source structure and processing equipment

Abstract

The invention provides an ion source structure and processing equipment, and the structure comprises an ion source cavity which comprises a first side wall, a first bottom region and a first opening region, and the first bottom region and the first opening region are oppositely arranged in a first direction; the N sets of grid mesh assemblies are located on the side, away from the first bottom area, of the first opening area, orthographic projections of the N sets of grid mesh assemblies in the first direction are not overlapped, N is larger than or equal to 2, and N is a positive integer; plasma in the ion source cavity passes through the grid mesh assembly to form an ion beam. According to the ion source structure, N sets of grid mesh assemblies are integrally arranged in the plasma emitting direction, plasma can generate corresponding ion beams when passing through each set of grid mesh assembly, and compared with the prior art, multiple ion source structures do not need to work at the same time under the condition that the efficiency can be improved and the productivity can be improved, and the cost is reduced. The process cost can be remarkably reduced, and the equipment size is reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor devices, and more particularly, to an ion source structure and a processing apparatus. Background Art

[0002] In the semiconductor industry, the processing of chips involves complex process flows, among which etching and coating are two core process technologies throughout the production of semiconductor components. Among several common etching and coating methods, Ion Beam Etching (IBE) and Ion Beam Deposition (IBD) play important roles due to their wide applicability. The principles of ion beam etching and ion beam sputtering deposition have something in common. Both use a vacuum ion beam as the energy source to bombard the target to achieve the process. In ion beam etching, the ion beam bombards the wafer to etch the surface of the wafer. In ion beam sputtering deposition, the ion beam bombards a high-purity target, and the sputtered material is deposited on the wafer surface to form a film.

[0003] In practical applications, in order to improve efficiency and productivity, a common method is to use multiple ion source structures to work simultaneously. In ion beam etching, multiple ion source structures etch the same wafer simultaneously to shorten the process time and improve efficiency. In ion beam sputtering deposition, multiple ion source structures bombard multiple targets or the same target to achieve the purpose of multi-material hybrid coating or improving coating efficiency.

[0004] However, the existing method requires a relatively large number of ion source structures, resulting in high costs and large equipment volume. Summary of the Invention

[0005] In view of this, to solve the above problems, the present invention provides an ion source structure and a processing apparatus, and the technical solutions are as follows:

[0006] An ion source structure, the ion source structure includes:

[0007] An ion source cavity, the ion source cavity includes a first side wall, and a first bottom region and a first opening region that are oppositely arranged in a first direction;

[0008] N sets of grid components, the grid components are located on a side of the first opening region away from the first bottom region, and the orthographic projections of the N sets of grid components in the first direction do not overlap each other, N≥2, and N is a positive integer; wherein, the plasma inside the ion source cavity forms an ion beam through the grid components.

[0009] Preferably, in the above ion source structure, the central region of the structure formed by the N sets of grid components protrudes towards the direction close to the first bottom region.

[0010] Preferably, in the above ion source structure, the central region of the structure formed by N sets of the grid assemblies protrudes away from the first bottom region.

[0011] Preferably, in the above ion source structure, the ion source structure includes: N first gas distribution plates, and the first gas distribution plates are located on the side of the grid assemblies facing the first bottom region;

[0012] Wherein, one first gas distribution plate corresponds to one set of the grid assemblies, and the plane where the first gas distribution plate is located is parallel to the plane where the corresponding grid assembly is located.

[0013] Preferably, in the above ion source structure, there is a gap between the first gas distribution plate and the corresponding grid assembly.

[0014] Preferably, in the above ion source structure, a plurality of air permeable holes are distributed on the first gas distribution plate.

[0015] Preferably, in the above ion source structure, the number of air permeable holes distributed in at least two unit area regions on the first gas distribution plate is different.

[0016] Preferably, in the above ion source structure, the ion source structure further includes:

[0017] A fixing seat located in the first opening region and fixed on the first side wall, and a support plate located in the central region of the first opening region;

[0018] N first gas distribution plates are installed between the fixing seat and the support plate.

[0019] Preferably, in the above ion source structure, the fixing seat is fixed on the inner side wall of the first side wall.

[0020] Preferably, in the above ion source structure, the material of the fixing seat is an insulating material, and the material of the support plate is an insulating material;

[0021] The melting point of the material of the fixing seat is greater than 300 °C, and the melting point of the material of the support plate is greater than 300 °C.

[0022] Preferably, in the above ion source structure, when the central region of the structure formed by N sets of the grid assemblies protrudes away from the first bottom region, the ion source structure further includes:

[0023] An electrode plate fixed on the support plate, and the electrode plate is located on the side of the first gas distribution plate facing away from the grid assemblies.

[0024] Preferably, in the above ion source structure, the ion source structure further includes:

[0025] A packaging protection shell, wherein the electrode plate is located in the packaging protection shell.

[0026] Preferably, in the above ion source structure, the ion source structure further comprises:

[0027] A plasma tube located in the ion source chamber, the plasma tube comprising a second side wall, and a second bottom area and a second opening area arranged opposite to each other in the first direction;

[0028] Wherein, the second bottom area is arranged adjacent to the first bottom area, the second opening area is arranged adjacent to the first opening area, and the plasma tube is used to generate the plasma.

[0029] Preferably, in the above ion source structure, the ion source structure further comprises: a coil;

[0030] The coil surrounds the plasma tube and is located between the first side wall and the second side wall.

[0031] Preferably, in the above ion source structure, the first bottom area has a first gas inlet, and the second bottom area has a second gas inlet.

[0032] Preferably, in the above ion source structure, the ion source structure further comprises:

[0033] A second gas distribution disk located at a side of the second bottom region facing away from the first bottom region;

[0034] The orthographic projection of the second gas homogenizing disk in the first direction covers the second gas inlet.

[0035] Preferably, in the above ion source structure, there is a gap between the second gas homogenizing disk and the second bottom area.

[0036] Preferably, in the above ion source structure, the ion source structure further comprises: N electron neutralizers, the electron neutralizers are located on a side of the grid assembly away from the first bottom area, and the electron neutralizers are facing the central area of ​​the grid assembly;

[0037] Among them, one electron neutralizer corresponds to one set of the grid components.

[0038] Preferably, in the above ion source structure, the ion source structure further comprises: a master controller;

[0039] The N sets of grid components are respectively connected to the master controller.

[0040] Preferably, in the above ion source structure, the ion source structure further includes: N controllers;

[0041] One set of the grid assembly is correspondingly connected to one of the controllers.

[0042] Preferably, in the above ion source structure, the grid assembly includes: a screen grid and an acceleration grid;

[0043] The acceleration grid is located on the side of the screen grid away from the first bottom region.

[0044] Preferably, in the above ion source structure, the grid shapes and grid sizes of each set of the N sets of grid assemblies are the same;

[0045] Or,

[0046] The grid shapes and / or grid sizes of any two sets of the N sets of grid assemblies are different.

[0047] Preferably, in the above ion source structure, the ion source cavity is a detachable component.

[0048] The present application also provides a processing device, which includes a process chamber and the ion source structure described in any one of the above;

[0049] The process chamber is hermetically connected to the ion source cavity in the ion source structure.

[0050] Compared with the prior art, the beneficial effects achieved by the present invention are:

[0051] The present invention provides an ion source structure and a processing device. The ion source structure includes: an ion source cavity, the ion source cavity includes a first side wall, and a first bottom region and a first opening region oppositely arranged in a first direction; N sets of grid assemblies, the grid assemblies are located on the side of the first opening region away from the first bottom region, the orthographic projections of the N sets of grid assemblies in the first direction do not overlap each other, N≥2, and N is a positive integer; wherein, the plasma inside the ion source cavity forms an ion beam through the grid assembly. That is to say, N sets of grid assemblies are integrally arranged in the direction of plasma emission in this ion source structure. When the plasma passes through each set of grid assemblies, corresponding ion beams can be generated. Compared with the prior art, without the need for multiple ion source structures to work simultaneously, the process cost can be significantly reduced and the equipment volume can be reduced while achieving higher efficiency and productivity. BRIEF DESCRIPTION OF THE DRAWINGS

[0052] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the drawings in the following description are only the embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on the provided drawings.

[0053] Figure 1 It is a schematic diagram of the principle structure of an ion source structure provided by an embodiment of the present invention;

[0054] Figure 2 It is a schematic diagram of the principle structure of another ion source structure provided by an embodiment of the present invention;

[0055] Figure 3 It is a top view structure schematic diagram of a grid assembly provided by an embodiment of the present invention;

[0056] Figure 4 It is a top view structure schematic diagram of another grid assembly provided by an embodiment of the present invention;

[0057] Figure 5 It is a structure schematic diagram of a second gas distribution plate provided by an embodiment of the present invention;

[0058] Figure 6 It is a structure schematic diagram of a first gas distribution plate provided by an embodiment of the present invention;

[0059] Figure 7 It is a schematic diagram of the principle structure of a processing device provided by an embodiment of the present invention;

[0060] Figure 8 It is a schematic diagram of the principle structure of another processing device provided by an embodiment of the present invention. Detailed implementation manners

[0061] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of protection of the present invention.

[0062] To make the above objects, features, and advantages of the present invention more obvious and understandable, the present invention will be further described in detail below with reference to the drawings and specific implementation manners.

[0063] Reference Figure 1 , Figure 1 It is a schematic diagram of the principle structure of an ion source structure provided by an embodiment of the present invention. Refer to Figure 2 ,Figure 2 The schematic diagram of the principle structure of another ion source structure provided by an embodiment of the present invention. The ion source structure 10 provided by the embodiment of the present invention includes:

[0064] An ion source cavity 11, the ion source cavity 11 includes a first side wall, and a first bottom region and a first opening region oppositely arranged in a first direction, and this first direction can also be understood as the length extension direction of the ion source cavity.

[0065] N sets of grid assemblies 12, the grid assemblies 12 are located on the side of the first opening region away from the first bottom region, and the orthographic projections of the N sets of grid assemblies 12 in the first direction do not overlap each other, N≥2, and N is a positive integer; wherein, the plasma inside the ion source cavity 11 forms an ion beam through the grid assemblies 12.

[0066] Specifically, in the embodiment of the present invention, N sets of grid assemblies 12 are integrally arranged in the direction of plasma emission of the ion source structure 10. When the plasma passes through each set of grid assemblies 12, corresponding ion beams can be generated. Compared with the prior art, without the need for multiple ion source structures to work simultaneously, the process cost can be significantly reduced, and the equipment volume can be reduced while achieving higher efficiency and productivity.

[0067] It should be noted that Figure 1 and Figure 2 take N = 2 as an example for illustration, that is, take the ion source structure 10 including two sets of grid assemblies 12 as an example for illustration. In some alternative embodiments, the value of N can also be other positive integers greater than 2. Refer to Figure 3 , Figure 3 The top view structure diagram of a grid assembly provided by an embodiment of the present invention. Figure 3 There are three grid assemblies 12 in it, that is, N = 3. Refer to Figure 4 , Figure 4 The top view structure diagram of another grid assembly provided by an embodiment of the present invention. Figure 4 There are four grid assemblies 12 in it, that is, N = 4.

[0068] Among them, the ion source cavity 11 is the outer shell of the entire ion source structure 10, providing support and fixation for each internal component. When the ion source structure 10 is applied in a processing device, based on the ion source cavity 11, a sealed connection with the process chamber of the processing device can be realized, so that the air pressure inside the ion source structure 10 is the same as that of the process chamber and is in a vacuum state to realize the processing of the workpiece to be processed, and the workpiece to be processed includes but is not limited to wafers.

[0069] Optionally, in another embodiment of the present invention, as shown in Figure 1As shown, the central region of the structure formed by N sets of the grid components 12 protrudes towards the direction close to the first bottom region.

[0070] Specifically, in the embodiment of the present invention, the central region of the structure formed by N sets of the grid components 12 protrudes towards the direction close to the first bottom region. At this time, the ion beams emitted by N sets of the grid components 12 will intersect after a certain distance. This ion source structure 10 can also be called a cross-type ion source structure. By controlling each set of the grid components 12, multiple groups of ion beams can be extracted to bombard the surface of the workpiece to be processed simultaneously, and high-efficiency etching work can be achieved in the ion beam etching process. Moreover, the ion beam current emitted by each set of the grid components 12 can be adjusted respectively to achieve the purpose of improving the uniformity.

[0071] It should be noted that Figure 1 the shown ion source structure 10 can also be applied to the ion beam sputtering coating process.

[0072] Optionally, in another embodiment of the present invention, as Figure 2 shown, the central region of the structure formed by N sets of the grid components 12 protrudes towards the direction away from the first bottom region.

[0073] Specifically, in the embodiment of the present invention, the central region of the structure formed by N sets of the grid components 12 protrudes towards the direction away from the first bottom region. At this time, the ion beams emitted by N sets of the grid components 12 are in a divergent state. This ion source structure 10 can also be called a divergent-type ion source structure. Obviously, by controlling each set of the grid components 12, multiple groups of ion beams can be extracted to bombard the corresponding target materials respectively, and multi-target and multi-material hybrid coating can be achieved in the ion beam sputtering coating process. By controlling the magnitude of the ion beam current emitted by each set of the grid components 12, the proportion of the coating materials can also be arbitrarily controlled.

[0074] It should be noted that Figure 2 the shown ion source structure 10 can also be applied to the ion beam etching process.

[0075] Optionally, in another embodiment of the present invention, as Figure 1 and Figure 2 shown, the ion source structure 10 provided by the embodiment of the present invention further includes:

[0076] a plasma cylinder 13 located in the ion source cavity 11, and the plasma cylinder 13 includes a second side wall, and a second bottom region and a second opening region oppositely arranged in the first direction.

[0077] Wherein, the second bottom region is adjacently arranged to the first bottom region, the second opening region is adjacently arranged to the first opening region, and the plasma cylinder 13 is used for generating the plasma.

[0078] The ion source structure includes an air inlet 14, and the air inlet 14 includes a first air inlet located in the first bottom region and a second air inlet located in the second bottom region.

[0079] Specifically, in the embodiment of the present invention, the plasma cylinder 13 includes but is not limited to a quartz cylinder. A coil 15 is wound around the outer sidewall of the plasma cylinder 13. The coil 15 is located between the first sidewall and the second sidewall, and is fixed to the inner sidewall of the ion source cavity 11, for example. The RF power supply is connected to the coil 15 through an RF matcher, for example. Process gas enters the interior of the plasma cylinder 13 through the first air inlet and the second air inlet. Then, the RF power supply is controlled to apply RF energy to the coil 15 through an RF matcher, for example, so as to ionize the process gas and generate corresponding plasma inside the plasma cylinder 13.

[0080] In order to ensure that the process gas entering the plasma cylinder 13 can be more evenly distributed inside the plasma cylinder 13, in the embodiment of the present invention, a second gas distribution disk 16 may further be provided on the side of the second bottom region facing away from the first bottom region. The positive projection of the second gas distribution disk 16 in the first direction covers the second air inlet, and there is a gap between the second gas distribution disk 16 and the second bottom region.

[0081] Obviously, the process gas entering the plasma cylinder 13 through the first air inlet and the second air inlet will be blocked by the second gas distribution disk 16 and flow into the interior of the plasma cylinder 13 along the periphery of the second gas distribution disk 16, achieving the purpose of gas flow diffusion based on the second gas distribution disk 16 and ensuring that the process gas inside the plasma cylinder 13 can be more evenly distributed. This process is usually referred to as the primary uniformity control process.

[0082] In some alternative embodiments of the present invention, referring to Figure 5 , Figure 5 is a schematic structural diagram of a second gas distribution disk provided by an embodiment of the present invention. The second gas distribution disk 16 is a solid disk without air holes, and only has individual first fixing holes 161, which are used to fix the second gas distribution disk 16 at a preset position.

[0083] It should be noted that Figure 5 merely takes four first fixing holes 161 as an example for illustration. In the actual design process, the positions and numbers of the first fixing holes 161 can be flexibly determined and are not limited in the embodiment of the present invention, as long as the second gas distribution disk 16 has strong stability after being fixed.

[0084] In an alternative embodiment of the present invention, the grid assembly 12 includes: a screen grid 121 and an accelerating grid 122; the accelerating grid 122 is located on a side of the screen grid 121 away from the first bottom region.

[0085] Specifically, a positive voltage and a negative voltage are respectively applied to the screen grid 121 and the accelerating grid 122. The screen grid 121 with the positive voltage applied is used to screen the plasma whose energy and direction meet the standards, and the accelerating grid 122 with the negative voltage applied is used to accelerate the plasma screened by the screen grid 121, thereby realizing the formation of an ion beam.

[0086] It should be noted that in some alternative embodiments, a third layer of grid with special functions may also be provided at the front end of the accelerating grid 122, that is, a third layer of grid with special functions is provided on a side of the accelerating grid 122 away from the screen grid 121.

[0087] Furthermore, it should be noted that the grid assembly 12 includes but is not limited to other types of grid assemblies such as a convex grid assembly, a concave grid assembly or a planar grid assembly, and can be flexibly replaced according to actual application needs.

[0088] Optionally, in another embodiment of the present invention, the ion source structure 10 further includes: a total controller; N sets of the grid assemblies 12 are respectively connected to the total controller.

[0089] Alternatively, the ion source structure 10 further includes: N controllers; one set of the grid assemblies 12 is correspondingly connected to one of the controllers.

[0090] Specifically, in the embodiment of the present invention, the common control of N sets of grid assemblies 12 is realized through a total controller. For example, the same voltage is applied to N sets of grid assemblies 12 through a total controller, so that multiple ion beam currents with the same energy can be obtained; N sets of grid assemblies 12 are respectively controlled by N controllers. For example, different voltages are applied to N sets of grid assemblies 12 through N controllers, so that multiple ion beam currents with different energy magnitudes can be obtained. This setting can make the application range of the ion source structure 10 provided by the embodiment of the present invention wider and can be applicable to more complex process environments.

[0091] Optionally, in another embodiment of the present invention, as Figure 1 and Figure 2 shown, the ion source structure 10 further includes: N electron neutralizers 17, the electron neutralizers 17 are located on a side of the grid assembly 12 away from the first bottom region, and the electron neutralizers 17 are directly opposite to the central region of the grid assembly 12; wherein, one electron neutralizer 17 corresponds to one set of the grid assemblies 12.

[0092] Specifically, in the embodiment of the present invention, after the process gas enters the plasma tube 13, the control of the RF power supply includes but is not limited to applying RF energy to the coil 15 through the RF matcher to ionize the process gas in the plasma tube 13 to form positive ions and electrons. This process is also called the ion source ignition process; then, positive voltage and negative voltage are applied to the screen grid 121 and the acceleration grid 122 respectively to form an electric field between the grids. Under the action of the electric field between the grids, the positive ions and electrons generated in the plasma tube 13 are ejected through the acceleration grid 122, and the electrons are absorbed by contacting the screen grid 121. This process is also called the ion source beam drawing process. The electron neutralizer 17 is used to emit electrons. The electrons emitted by the electron neutralizer 17 collide with the emitted positive ion beam to turn the positive ions back into atoms. This process is also called the electrical neutralization process, and finally an electrically neutral and high-energy ion beam is formed. Based on this ion beam, etching processing or sputtering target coating processing of the workpiece to be processed can be achieved.

[0093] Optionally, in another embodiment of the present invention, Figure 1 and Figure 2 As shown, the ion source structure 10 includes: N first gas uniforming disks 18, and the first gas uniforming disks 18 are located on a side of the grid assembly 12 facing the first bottom area.

[0094] One of the first air-distributing disks 18 corresponds to one set of the grid assembly 12 , and the plane where the first air-distributing disk 18 is located is parallel to the plane where the corresponding grid assembly 12 is located.

[0095] Specifically, in the embodiments of the present invention, Figure 1 As shown in the figure, the central area of ​​the structure formed by the N sets of the grid assembly 12 protrudes toward the direction close to the first bottom area. Based on the positional relationship between the first gas-distributing disk 18 and the grid assembly 12, it is obvious that the neutral area of ​​the structure formed by the N first gas-distributing disks 18 also protrudes toward the direction close to the first bottom area. Figure 2 The central area of ​​the structure formed by the N sets of the grid assemblies 12 protrudes in the direction away from the first bottom area. Based on the positional relationship between the first air-distributing disk 18 and the grid assembly 12, it is obvious that the central area of ​​the structure formed by the N first air-distributing disks 18 also protrudes in the direction away from the first bottom area.

[0096] There is a gap between the first gas homogenizing disk 18 and the corresponding grid assembly 12 to ensure that the plasma reaching the grid assembly has been processed by the first gas homogenizing disk 18. This process is also commonly referred to as a secondary uniformity control process.

[0097] It should be noted that, under normal circumstances, the size of the first gas distribution plate 18 is larger than that of the second gas distribution plate 16. The size of the first gas distribution plate 18 is designed based on the size of the grid assembly 12, and the size of the second gas distribution plate 16 is designed based on the size of the second bottom region.

[0098] Reference Figure 6 , Figure 6 FIG. is a schematic structural diagram of a first gas distribution plate provided by an embodiment of the present invention. In addition to having individual second fixing holes 181 distributed thereon, the first gas distribution plate 18 provided by the embodiment of the present invention also has a plurality of ventilation holes 182 distributed thereon. The number of ventilation holes 182 distributed in at least two unit area regions on the first gas distribution plate 18 is different.

[0099] Specifically, in the embodiment of the present invention, the ventilation holes 182 of the first gas distribution plate 18 are not evenly distributed. Since the plane where the grid assembly 12 is located is not perpendicular to the first direction, the distribution of the ventilation holes 182 on the first gas distribution plate 18 can be determined based on the inclination direction of the grid assembly 12, so as to ensure that the positive ions and electrons generated in the plasma cylinder 13 can be more evenly incident on the grid assembly 12 after passing through the first gas distribution plate 18, thereby improving the uniformity of the emitted ion beam.

[0100] It should be noted that, Figure 6 only four second fixing holes 181 are taken as examples for illustration. In the actual design process, the positions and numbers of the second fixing holes 181 can be flexibly determined and are not limited in the embodiment of the present invention, as long as the first gas distribution plate 18 has strong stability after being fixed.

[0101] Optionally, in another embodiment of the present invention, as Figure 1 and Figure 2 shown, the ion source structure 10 further includes:

[0102] A fixing seat 19 located in the first opening region and fixed on the first side wall, and a support plate 20 located in the central region of the first opening region.

[0103] N first gas distribution plates 18 are installed between the fixing seat 19 and the support plate 20.

[0104] Specifically, in the embodiment of the present invention, the fixing seat 19 is fixed on the inner side wall of the first side wall. The N first gas distribution plates 18 are clamped and fixed by the fixing seat 19 and the support plate 20. The material of the fixing seat 19 is an insulating material, and the material of the support plate 20 is an insulating material. On the basis of insulation, the material of the fixing seat 19 can preferably be a high-temperature resistant material. Similarly, the material of the support plate 20 can also preferably be a high-temperature resistant material on the basis of insulation. For example, the material of the fixing seat 19 includes but is not limited to ceramic materials and other insulating and high-temperature resistant materials, and the material of the support plate 20 includes but is not limited to ceramic materials and other insulating and high-temperature resistant materials.

[0105] Optionally, the melting point of the material of the fixing seat is greater than 300 °C, and the melting point of the material of the support plate is greater than 300 °C.

[0106] Optionally, in another embodiment of the present invention, as Figure 2 shown, when the central region of the structure formed by the N sets of grid assemblies 12 protrudes away from the first bottom region, the ion source structure 10 further includes:

[0107] An electrode plate 21 fixed on the support plate 20, and the electrode plate 21 is located on the side of the first gas distribution plate 18 away from the grid assembly 12.

[0108] Specifically, in the embodiment of the present invention, since the central region of the structure formed by the N sets of grid assemblies 12 protrudes away from the first bottom region, the positive ions in the plasma cylinder 13 will gather in this central region. In order to avoid this aggregation phenomenon, an electrode plate 21 can be provided here. When the electrode plate 21 is positively charged, the movement trend of the positive ions can be adjusted, thereby improving the beam current uniformity.

[0109] Optionally, the ion source structure 10 provided in the embodiment of the present invention further includes: a packaging and protection housing 22, and the electrode plate 21 is located inside the packaging and protection housing 22, thereby realizing the packaging and protection of the electrode plate 21. The material of the packaging and protection housing 22 includes but is not limited to quartz materials, etc.

[0110] Optionally, the ion source structure 10 provided in the embodiment of the present invention further includes: a grid assembly 12, and the grid assembly 12 includes a screen grid 121 and an acceleration grid 122. Among the N sets of grid assemblies, the grid shapes and grid sizes of each set of grid assemblies are the same, or the grid shapes and / or grid sizes of any two sets of grid assemblies among the N sets of grid assemblies are different. That is to say, the grid shapes and grid sizes of the screen grid 121 and the acceleration grid 122 in each set of grid assemblies 12 can be the same, and among the N sets of grid assemblies 12, the grid shapes and / or grid sizes of the screen grid 121 and the acceleration grid 122 can be different.

[0111] Specifically, the shapes of the screen grid 121 and the acceleration grid 122 can be planar grids or arc-shaped grids; according to the actual installation and beam current area requirements, the outer edge of the grid assembly 12 can be circular, elliptical or other irregular shapes; in different sets of grid assemblies 12, the grid sizes can be different to adjust the beam current intensity in a local area.

[0112] Optionally, in the ion source structure 10 provided by the embodiments of the present invention, the ion source cavity 11 is a detachable component. By replacing the ion source cavity 11 with different opening designs, ion source cavities 11 with different opening angles can be applied. In other words, the opening angle of the ion source structure provided by the embodiments of the present invention is variable.

[0113] Specifically, the shape of the first opening area of the ion source cavity 11 is variable. The first opening area has N fixed planes corresponding to N sets of grid assemblies 12, and the angles of these planes are variable to change the beam extraction direction of the grid assembly 12.

[0114] Based on the above embodiments of the present invention, in another embodiment of the present invention, a processing device is further provided. Refer to Figure 7 , Figure 7 which is a schematic diagram of the principle structure of a processing device provided by the embodiments of the present invention. Refer to Figure 8 , Figure 8 which is a schematic diagram of the principle structure of another processing device provided by the embodiments of the present invention. The processing device provided by the embodiments of the present invention includes: a process chamber 23 and the ion source structure 10 described in the above embodiments; the process chamber 23 is hermetically connected to the ion source cavity 11 in the ion source structure 10.

[0115] As Figure 7 shown, the processing device includes a process chamber 23 and Figure 1 the ion source structure 10 shown. Exemplarily, Figure 7 the processing device shown is used for ion beam etching treatment of a workpiece to be processed 25.

[0116] The processing device further includes a workpiece stage 24 for carrying the workpiece to be processed 25, such as for carrying a wafer. The workpiece stage 24 can achieve rotation and revolution, and thus the workpiece to be processed 25 can also perform rotation and revolution under the drive of the workpiece stage 24.

[0117] Multiple groups of ion beams emitted from the ion source structure 10 can simultaneously bombard the workpiece to be processed 25 for ion beam etching treatment.

[0118] As Figure 8 shown, the processing device includes a process chamber 23 and Figure 2 the ion source structure 10 shown. Exemplarily, Figure 8The shown processing equipment is used for performing ion beam sputtering coating treatment on a workpiece 25 to be processed.

[0119] The processing equipment further includes a workpiece stage 24 and different target materials 26 and 27. The workpiece stage 24 is used for carrying the workpiece 25 to be processed, such as for carrying a wafer. The workpiece stage 24 can achieve rotation and revolution, and thus the workpiece 25 to be processed can also perform rotation and revolution driven by the workpiece stage 24.

[0120] Multiple groups of ion beams emitted by the ion source structure 10 can bombard different target materials 26 and 27, causing different target materials to be sputtered onto the workpiece 25 to be processed for ion beam sputtering coating.

[0121] Since the grid assembly 12 in the ion source structure 10 can be independently controlled by different controllers, obviously, the material ratios of different target materials sputtered onto the workpiece 25 to be processed can be controlled more flexibly to achieve the preparation of more complex film layers.

[0122] It should be noted that whether ion beam etching treatment or ion beam sputtering coating is performed, the process chamber 23 is in a vacuum state. The ion source cavity 11 is the outer shell of the entire ion source structure 10, providing support and fixation for each internal component. When the ion source structure 10 is applied in the processing equipment, based on the ion source cavity 11, a sealed connection with the process chamber 23 of the processing equipment can be achieved, so that the air pressure inside the ion source structure 10 is the same as that in the process chamber 23, in a vacuum state, to realize the processing of the workpiece 25 to be processed.

[0123] It should be noted that since N sets of grid assemblies 12 can be respectively controlled by N controllers, it is also possible to apply voltage to some grid assemblies 12 and not apply voltage to some grid assemblies 12. The grid assemblies 12 to which voltage is applied can normally output ion beam currents, and obviously, the grid assemblies 12 to which no voltage is applied cannot output ion beam currents. For example, when a very high ion beam energy is not required at a certain stage of ion beam etching treatment, obviously, some grid assemblies 12 can be opened and some grid assemblies 12 can be closed, and then the total energy of the emitted ion beam current can be regulated to meet the etching requirements. For example, at a certain stage of ion beam sputtering coating treatment, when it is necessary to stop bombarding a certain target material, obviously, voltage application to the corresponding grid assembly 12 can also be stopped to make it stop outputting ion beam current.

[0124] It is further noted that in the embodiments of the present invention, ion beam currents output by two or more sets of grid assemblies 12 can also bombard the same target material simultaneously to improve the bombardment efficiency of this target material and make the material ratios of different target materials more flexibly controllable.

[0125] The above has introduced in detail an ion source structure and processing equipment provided by the present invention. Specific examples are used in this article to elaborate on the principle and implementation manner of the present invention. The description of the above embodiments is only used to help understand the method and its core idea of the present invention; at the same time, for those of ordinary skill in the art, according to the idea of the present invention, there will be changes in the specific implementation manner and application scope. In summary, the content of this specification should not be construed as a limitation to the present invention.

[0126] It should be noted that the various embodiments in this specification are described in a progressive manner. Each embodiment focuses on the differences from other embodiments. The same or similar parts among the various embodiments can be referred to each other. For the devices disclosed in the embodiments, since they correspond to the methods disclosed in the embodiments, the description is relatively simple. For the relevant parts, reference can be made to the description in the method part.

[0127] It should also be noted that in this article, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, so that the elements inherent in a process, method, article or device comprising a series of elements, or those elements that are also inherent in these process, methods, articles or devices. Without further limitation, the element defined by the statement "comprising an..." does not exclude the existence of additional identical elements in the process, method, article or device comprising the said element.

[0128] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present invention. Various modifications to these embodiments will be obvious to those skilled in the art. The general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to these embodiments shown herein, but rather to the broadest scope consistent with the principles and novel features disclosed herein.

Claims

1. An ion source structure, characterized in that, The ion source structure comprises: An ion source chamber, the ion source chamber comprising a first side wall, and a first bottom region and a first opening region arranged opposite to each other in a first direction; N sets of grid assemblies, wherein the grid assemblies are located on a side of the first opening area away from the first bottom area, and the orthographic projections of the N sets of grid assemblies in the first direction do not overlap with each other, N≥2, and N is a positive integer; wherein the plasma inside the ion source cavity passes through the grid assembly to form an ion beam.

2. The ion source structure according to claim 1, characterized in that, The central area of ​​the structure formed by the N sets of the grid assemblies protrudes toward the direction close to the first bottom area.

3. The ion source structure according to claim 1, characterized in that, A central area of ​​the structure formed by N sets of the grid assemblies protrudes in a direction away from the first bottom area.

4. The ion source structure according to any one of claims 1-3, characterized in that, The ion source structure comprises: N first gas-distributing disks, wherein the first gas-distributing disks are located on a side of the grid assembly facing the first bottom area; Among them, one of the first gas-distributing disks corresponds to one set of the grid assembly, and the plane where the first gas-distributing disk is located is parallel to the plane where the corresponding grid assembly is located.

5. The ion source structure according to claim 4, characterized in that, There is a gap between the first gas uniforming disk and the corresponding grid assembly.

6. The ion source structure according to claim 4, characterized in that, A plurality of air holes are distributed on the first gas-distributing disk.

7. The ion source structure according to claim 6, characterized in that, The number of air holes distributed in at least two unit areas of the first gas homogenizing disk is different.

8. The ion source structure according to claim 4, characterized in that, The ion source structure also includes: a fixing seat located in the first opening area and fixed on the first side wall, and a supporting plate located in the central area of ​​the first opening area; The N first gas uniforming disks are installed between the fixing seat and the supporting plate.

9. The ion source structure according to claim 8, characterized in that, The fixing seat is fixed on the inner side wall of the first side wall.

10. The ion source structure according to claim 8, characterized in that, The material of the fixing seat is insulating material, and the material of the supporting plate is insulating material; The melting point of the material of the fixing seat is greater than 300°C, and the melting point of the material of the supporting plate is greater than 300°C.

11. The ion source structure according to claim 8, characterized in that, When the central area of ​​the structure formed by the N sets of the grid assemblies protrudes in a direction away from the first bottom area, the ion source structure further includes: An electrode plate is fixed on the support plate, and the electrode plate is located on a side of the first gas uniforming disk away from the grid assembly.

12. The ion source structure according to claim 11, characterized in that, The ion source structure also includes: A packaging protection shell, wherein the electrode plate is located in the packaging protection shell.

13. The ion source structure according to claim 1, characterized in that, The ion source structure also includes: A plasma tube located in the ion source chamber, the plasma tube comprising a second side wall, and a second bottom area and a second opening area arranged opposite to each other in the first direction; Wherein, the second bottom area is arranged adjacent to the first bottom area, the second opening area is arranged adjacent to the first opening area, and the plasma tube is used to generate the plasma.

14. The ion source structure according to claim 13, characterized in that, The ion source structure further includes: a coil; The coil surrounds the plasma tube and is located between the first side wall and the second side wall.

15. The ion source structure according to claim 13, characterized in that, The first bottom area has a first air inlet, and the second bottom area has a second air inlet.

16. The ion source structure according to claim 15, characterized in that, The ion source structure also includes: A second gas distribution disk located at a side of the second bottom region facing away from the first bottom region; The orthographic projection of the second gas homogenizing disk in the first direction covers the second gas inlet.

17. The ion source structure according to claim 16, characterized in that, There is a gap between the second gas homogenizing plate and the second bottom region.

18. The ion source structure according to claim 1, characterized in that, The ion source structure further includes: N electron neutralizers, which are located on the side of the grid assembly away from the first bottom region, and the electron neutralizers are aligned with the central region of the grid assembly; Wherein, one electron neutralizer corresponds to one set of the grid assemblies.

19. The ion source structure according to claim 1, characterized in that, The ion source structure further includes: a general controller; N sets of the grid assemblies are respectively connected to the general controller.

20. The ion source structure according to claim 1, characterized in that, The ion source structure further includes: N controllers; One set of the grid assemblies is correspondingly connected to one of the controllers.

21. The ion source structure according to claim 1, characterized in that, The grid assembly includes: a screen grid and an acceleration grid; The acceleration grid is located on the side of the screen grid away from the first bottom region.

22. The ion source structure according to claim 21, characterized in that, The grid shapes and grid sizes of each set of the N sets of the grid assemblies are the same; Or, The grid shapes and / or grid sizes of any two sets of the N sets of the grid assemblies are different.

23. The ion source structure according to claim 1, characterized in that, The ion source cavity is a detachable component.

24. A processing device, characterized in that, The processing equipment includes a process chamber and the ion source structure according to any one of claims 1-23; The process chamber is hermetically connected to the ion source cavity in the ion source structure.

Images