Growth method of semiconductor device and related device

Abstract

The invention discloses a growth method of a semiconductor device and a related device, the growth device comprises a reaction etching cavity provided with a gas injection system and an exhaust system, a test cavity, a growth cavity and a transfer cavity, the gas injection system is used for injecting etching gas and reaction gas, the reaction gas reacts with impurity elements on the surface of a substrate to obtain an impurity compound, and the test cavity is used for testing the etching gas; the etching gas is used for etching the impurity compound; the exhaust system is used for discharging impurity compounds; the test cavity is used for testing and characterizing the etched substrate to obtain a test result; the growth cavity is used for epitaxially growing an epitaxial structure on the substrate; and the transfer cavity is used for providing a transition space when the substrate is transferred among the etching cavity, the test cavity and the growth cavity. According to the invention, by controlling the sequential injection of the etching gas and the reaction gas, the impurity elements on the surface of the substrate form the impurity compound and are discharged immediately, so that the influence of the impurity elements on the subsequent epitaxial growth is reduced, and the purity and uniformity of the epitaxial layer are improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor device manufacturing, and particularly to a growth method and related device for a semiconductor device. Background Art

[0002] Due to its excellent properties such as wide bandgap, high breakdown electric field, and high electron saturation drift velocity, gallium nitride (GaN) materials show great application potential in the fields of high-power and high-frequency electronic devices. Based on the vertical device structure of GaN homoepitaxy, theoretically, ultra-high breakdown voltage levels and ultra-high-frequency device performance can be achieved, which is one of the important directions for the development of future power electronic devices.

[0003] However, the performance of current GaN homoepitaxial vertical devices is still restricted by many factors, among which the impurity contamination problem at the epitaxial interface is particularly prominent. Specifically, during the device manufacturing process, impurity elements such as silicon (Si) and oxygen (O) are extremely easy to re-accumulate on the epitaxial surface of the nitride in the atmospheric environment, forming parasitic effects. These impurities are not only difficult to effectively remove through a single etching step, but also during the operation of the device, the residual impurity elements at the epitaxial interface form leakage channels. This will not only significantly reduce the breakdown voltage capacity and operating frequency of the device, but also affect the stability and reliability of the device, thus severely restricting the full play of the performance of homoepitaxial vertical devices.

[0004] To overcome this technical problem, researchers have been exploring more effective growth methods and devices for semiconductor devices. Traditional growth methods often ignore the influence of impurity elements on device performance, or only rely on simple etching steps to remove impurities, but the effect is not ideal. Summary of the Invention

[0005] The purpose of the present invention is to provide a growth method and related device for a semiconductor device. By controlling the sequential injection of etching gas and reaction gas, impurity elements on the substrate surface can be formed into impurity compounds and immediately discharged, reducing the influence of impurity elements on subsequent epitaxial growth and improving the purity and uniformity of the epitaxial layer.

[0006] The purpose of the present invention is achieved by the following technical solutions.

[0007] On the one hand, the present invention provides a growth device for a semiconductor device, and the growth device includes:

[0008] A reaction etching chamber, the reaction etching chamber is configured with an air injection system and an exhaust system. The air injection system is used to inject etching gas and reaction gas. The reaction gas is used to react with impurity elements on the substrate surface to obtain impurity compounds, and the etching gas is used to etch the impurity compounds; the exhaust system is used to discharge the impurity compounds;

[0009] A test chamber for testing and characterizing a substrate after etching treatment to obtain test results, where the test results include the surface element content and types of the substrate;

[0010] A growth chamber for epitaxially growing an epitaxial structure on a substrate;

[0011] A transfer chamber, which is connected to the reactive etching chamber, the test chamber, and the growth chamber, and is used to provide a transition space for the substrate when it is transferred between the reactive etching chamber, the test chamber, and the growth chamber.

[0012] Beneficial effects of the above solution: By integrating the reactive etching chamber, the test chamber, and the growth chamber into one device, the present invention reduces the transfer time and contamination risk of the substrate between different process steps, and improves production efficiency. By providing a transfer chamber, the substrate can be automatically transferred between different chambers, reducing manual intervention and enhancing the consistency and reliability of the process. At the same time, as a transition space, the transfer chamber ensures the independent operation of each chamber, allows adjusting the processing sequence or repeating specific steps according to process requirements, and is convenient for independently controlling key process parameters such as temperature, pressure, and gas composition, enabling precise control of the growth process of semiconductor devices; By controlling the sequential injection of etching gas and reaction gas in the reactive etching chamber, impurity elements on the substrate surface can be formed into impurity compounds and immediately discharged, effectively removing impurity elements on the substrate surface, reducing the influence of impurities on subsequent epitaxial growth, and improving the purity and uniformity of the epitaxial layer. By immediately testing and characterizing the etched substrate in the test chamber and combining the corresponding feedback mechanism to ensure that each process step achieves the expected effect, the quality of epitaxial growth is improved.

[0013] Further, the growth device of the semiconductor device further includes a gate valve assembly, and the gate valve assembly is used to control the connection or isolation between the transfer chamber and the reactive etching chamber, the test chamber, or the growth chamber;

[0014] Beneficial effects of the above solution: By providing a gate valve assembly, the connection and isolation between each chamber are more precise, avoiding gas cross-contamination between different process steps and improving the purity of the process.

[0015] Further, the reactive etching chamber, the test chamber, and the growth chamber are arranged around the transfer chamber.

[0016] Beneficial effects of the above solution: In the present invention, the reactive etching chamber, the test chamber, and the growth chamber are arranged around the transfer chamber, optimizing the spatial layout of the device, reducing the overall volume, and facilitating the transfer of the substrate.

[0017] Further, the growth chamber includes:

[0018] The first epitaxial chamber, which is a MOCVD epitaxial chamber or an MBE epitaxial chamber, is used for epitaxial growth;

[0019] The second epitaxial chamber, which is an HVPE epitaxial chamber, is used for epitaxial growth;

[0020] Wherein, the first epitaxial chamber and the second epitaxial chamber are arranged adjacent to each other, and both the first epitaxial chamber and the second epitaxial chamber are connected to the transfer chamber through the gate valve assembly.

[0021] Beneficial effects of the above solution: By providing the first epitaxial chamber and the second epitaxial chamber, which are respectively used for MOCVD and HVPE processes, the device can adapt to different epitaxial growth requirements, expanding the application range of the device. In addition, the adjacent arrangement of the first epitaxial chamber and the second epitaxial chamber facilitates rapid switching between different processes, improving production efficiency.

[0022] Further, the transfer chamber includes a transfer chamber body, and the transfer chamber body is provided with:

[0023] A first window for connecting the transfer chamber and the first epitaxial chamber through the gate valve assembly;

[0024] A second window for connecting the transfer chamber and the second epitaxial chamber through the gate valve assembly;

[0025] A third window for connecting the transfer chamber and the reaction etching chamber through the gate valve assembly;

[0026] A fourth window for connecting the transfer chamber and the test chamber through the gate valve assembly.

[0027] Beneficial effects of the above solution: By connecting different chambers through different windows, the present invention ensures the rapid transfer of the substrate between various process steps, reducing the process time.

[0028] Further, the gate valve assembly includes:

[0029] A first valve, which is arranged at the first window and is used to control the connection and isolation between the transfer chamber and the first epitaxial chamber;

[0030] A second valve, which is arranged at the second window and is used to control the connection and isolation between the transfer chamber and the second epitaxial chamber;

[0031] A third valve, which is arranged at the third window and is used to control the connection and isolation between the transfer chamber and the third epitaxial chamber;

[0032] A fourth valve, which is arranged at the fourth window and is used to control the connection and isolation between the transfer chamber and the fourth epitaxial chamber.

[0033] Beneficial effects of the above solution: By setting multiple valves to separately control the connection and isolation between different chambers, the present invention ensures the independence and accuracy of each process step and avoids cross-contamination of gases and impurities.

[0034] Furthermore, the test chamber is configured with a test system, and the test system includes a SIMS test system, an XPS test system, and / or an EDS test system;

[0035] Beneficial effects of the above solution: By configuring test systems such as SIMS, XPS, and EDS, the present invention can comprehensively analyze and characterize the elements on the substrate surface to ensure the quality of the substrate before epitaxial growth.

[0036] Furthermore, the transfer chamber is configured with a manipulator for delivering the substrate to the reactive etching chamber, the test chamber, or the growth chamber;

[0037] Beneficial effects of the above solution: The manipulator of the present invention realizes the automatic transfer of the substrate, reducing errors and contamination caused by manual operation.

[0038] Furthermore, the substrate is a nitride single crystal substrate;

[0039] Furthermore, the impurity elements include a first impurity and a second impurity element. The first impurity element includes Si element, and the second impurity element includes O element;

[0040] Furthermore, the etching gas includes a chlorine-based gas, a fluorine-based gas, and / or a bromine-based gas. The chlorine-based gas includes CCl4, the fluorine-based gas includes SF6, and the bromine-based gas includes HBr;

[0041] Furthermore, the reaction gas includes H2 and a carbon-based gas, and the carbon-based gas includes CH4.

[0042] Beneficial effects of the above solution: For the nitride single crystal substrate and specific impurity elements (such as Si, O), the present invention configures corresponding etching gases and reaction gases to ensure the high efficiency of impurity removal and the high quality of epitaxial growth.

[0043] In a second aspect, the present invention provides a growth method for a semiconductor device. The growth method is applied to the above-mentioned growth device for a semiconductor device, and the growth method is completed under vacuum conditions;

[0044] The growth method includes the following steps:

[0045] Step a1: Transfer the substrate into the reactive etching chamber through the transfer chamber;

[0046] Step b1: First, introduce a reaction gas into the reaction etching chamber, and then introduce an etching gas into the reaction etching chamber to remove impurity elements on the surface of the substrate;

[0047] Step c1: Transfer the etched substrate into the test chamber through the transfer chamber, and perform testing and characterization on the etched substrate to obtain a first test result, where the first test result includes the surface element content and types of the substrate;

[0048] Step d1: When the test result meets the first preset requirement, transfer the etched substrate into the growth chamber through the transfer chamber, and grow an epitaxial structure on the substrate to obtain a semiconductor device.

[0049] Beneficial effects of the above solution: In the present invention, through the sequential treatment of the reaction gas and the etching gas, impurity elements on the surface of the substrate can be effectively removed. This dual treatment method ensures the deep removal of impurities, purifies the surface of the substrate, and provides a high-quality substrate for subsequent epitaxial growth. At the same time, through testing and characterization, the element content and types on the surface of the substrate can be accurately measured to ensure that the substrate meets the preset requirements after etching treatment, thereby greatly improving the quality and reliability of the semiconductor device

[0050] Further, the growth method further includes step e1: When the first test result does not meet the first preset requirement, repeat steps a1 to c1 until the first test result meets the first preset requirement;

[0051] Beneficial effects of the above solution: In the present invention, when the test result does not meet the preset requirement, a feedback mechanism can be entered, such as repeating the etching and testing steps, to ensure that the surface quality of the substrate meets the requirements and improve the reliability of the process.

[0052] Further, the epitaxial structure includes m structural layers, where m ≥ 1;

[0053] Further, growing an epitaxial structure on the substrate to obtain a semiconductor device includes:

[0054] Step d11: Transfer the current device structure into the reaction etching chamber;

[0055] Step d12: First, introduce a reaction gas into the reaction etching chamber, and then introduce an etching gas into the reaction etching chamber to remove impurity elements on the surface of the current device structure; where the initial structure of the current device structure is a substrate and the first structural layer grown epitaxially stacked;

[0056] Step d13: Transfer the currently processed device structure after etching into the test chamber through the transfer chamber, and test and characterize the currently processed device structure to obtain a second test result, where the second test result includes the surface element content and types of the currently processed device structure;

[0057] Step d14: When the second test result meets the second preset requirement, transfer the currently processed device structure after etching into the growth chamber through the transfer chamber to grow the next layer of the structural layer on the currently processed device structure to obtain an intermediate structure;

[0058] Step d15: When the second test result does not meet the second preset requirement, record the intermediate structure as the currently processed device structure, and repeat steps d11 to d13 until the second test result of the structural layer of the mth layer meets the second preset requirement.

[0059] Further, the semiconductor device is a homoepitaxial nitride vertical device, the growth chamber includes a first epitaxial chamber and a second epitaxial chamber arranged adjacent to each other, the epitaxial structure includes three layers of structural layers, the three layers of structural layers include an I-type layer, a P-type layer, and an N-type layer, the first epitaxial chamber is used to grow the P-type layer and the N-type layer, and the second epitaxial chamber is used to grow the I-type layer; wherein, different growth processes are adopted for the first epitaxial chamber and the second epitaxial chamber;

[0060] Further, the flow rate of the reaction gas is 0.1 - 10 m / s, the introduction duration is 10 s - 1000 s, the reaction gas includes a carbon-based gas and hydrogen, and the volume ratio of the carbon-based gas to hydrogen is 1:(100 - 10000);

[0061] Further, the flow rate of the etching gas is 0.1 - 1 m / s, the introduction duration is 10 s - 100 s, the etching gas includes a chlorine-based gas and a fluorine-based gas, and the volume ratio of the chlorine-based gas to the fluorine-based gas is 1:(1 - 10);

[0062] Further, the flow rate of the etching gas is 0.1 - 1 m / s, the introduction duration is 10 s - 100 s, the etching gas includes a chlorine-based gas and a bromine-based gas, and the volume ratio of the chlorine-based gas to the bromine-based gas is (3 - 2):1;

[0063] Further, the flow rate of the etching gas is 0.1 - 1 m / s, the introduction duration is 10 s - 100 s, the etching gas includes a fluorine-based gas and a bromine-based gas, and the volume ratio of the fluorine-based gas to the bromine-based gas is (5 - 4):1.

[0064] Beneficial effects of the above solution: For the growth requirements of homogeneous epitaxial nitride vertical devices, the present invention precisely controls the flow rate, duration, and ratio of reaction gases and etching gases, ensuring the efficiency and consistency of impurity removal and epitaxial growth to ensure the superiority of device performance.

[0065] In a third aspect, the present invention provides a growth system for a semiconductor device, the growth system comprising:

[0066] A growth apparatus for a semiconductor device, the growth apparatus for a semiconductor device being the above-mentioned growth apparatus for a semiconductor device, for growing a semiconductor device;

[0067] A control device, the control device being connected to the growth apparatus for a semiconductor device, for driving the growth apparatus for a semiconductor device to execute the above-mentioned growth method for a semiconductor device.

[0068] Beneficial effects of the above solution: By integrating the growth apparatus for a semiconductor device with a control device, the present invention realizes the automatic control of the growth process of a semiconductor device, reduces human error, improves production efficiency and process consistency, and improves the yield and quality of semiconductor devices.

[0069] Compared with the prior art, the beneficial effects of the present invention at least include:

[0070] By integrating a reaction etching chamber, a test chamber, and a growth chamber in one device, the present invention reduces the transfer time and contamination risk of the substrate between different process steps, improving production efficiency. By providing a transfer chamber, the substrate can be automatically transferred between different chambers, reducing manual intervention and enhancing the consistency and reliability of the process. At the same time, as a transition space, the transfer chamber ensures the independent operation of each chamber, allowing the processing sequence to be adjusted or specific steps to be repeated according to process requirements. Meanwhile, it is convenient to independently control key process parameters such as temperature, pressure, and gas composition, enabling precise control of the growth process of semiconductor devices; by controlling the sequential injection of etching gases and reaction gases in the reaction etching chamber, impurity elements on the substrate surface can be formed into impurity compounds and immediately discharged, effectively removing impurity elements on the substrate surface and reducing the influence of impurities on subsequent epitaxial growth, improving the purity and uniformity of the epitaxial layer. By immediately testing and characterizing the etched substrate in the test chamber and combining the corresponding feedback mechanism to ensure that each process step achieves the expected effect, the quality of epitaxial growth is improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0071] Figure 1 is a schematic structural diagram of a growth apparatus for a semiconductor device provided by the present invention.

[0072] Figure 2 is a schematic flow diagram of a growth method for a semiconductor device provided by the present invention.

[0073] Figure 3 It is another process schematic diagram of the growth method of the semiconductor device provided by the present invention.

[0074] In the figure: 1. Transfer chamber; 21. First epitaxial chamber; 22. Second epitaxial chamber; 3. Reaction etching chamber; 32. Gas injection system; 33. Exhaust system; 4. Test chamber; 5. Gate valve assembly; 51. First valve; 52. Third valve; 53. Fourth valve; 54. Second valve; 6. Substrate. Detailed implementation manners

[0075] Now, example embodiments will be described more fully with reference to the accompanying drawings. However, the example embodiments can be implemented in various forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this invention will be more complete and comprehensive, and will fully convey the concept of the example embodiments to those skilled in the art. Identical reference numerals in the figures denote identical or similar structures, and thus their repetitive description will be omitted.

[0076] The words expressing positions and directions described in the present invention are all illustrated by taking the accompanying drawings as examples, but can be changed according to needs, and all the changes made are included in the protection scope of the present invention.

[0077] In order to efficiently remove impurities at the epitaxial interface and ensure the stable performance of the semiconductor device, the present invention provides a growth method and related device for a semiconductor device.

[0078] Refer to Figure 1 , Figure 1 , which is a schematic structural diagram of the growth device of the semiconductor device provided by the present invention. The growth device of the semiconductor device includes: a reaction etching chamber 3, a test chamber 4, a growth chamber, and a transfer chamber 1.

[0079] The reaction etching chamber 3 is used for etching the substrate 6, and the substrate 6 can be a nitride single crystal substrate.

[0080] The test chamber 4 is used for testing and characterizing the substrate 6 after the etching process to obtain test results, and the test results include the surface element content and types of the substrate 6.

[0081] The growth chamber is used for epitaxially growing an epitaxial structure on the substrate 6.

[0082] The transfer chamber 1 is connected to the reaction etching chamber 3, the test chamber 4, and the growth chamber, and is used to provide a transition space for the substrate 6 when transferring between the reaction etching chamber, the test chamber 4, and the growth chamber.

[0083] By integrating the reactive etching chamber 3, the test chamber 4, and the growth chamber in a growth device, the present invention reduces the transfer time and contamination risk of the substrate 6 between different process steps, thereby improving the production efficiency. Moreover, by connecting the transfer chamber 1 to the reactive etching chamber 3, the test chamber 4, and the growth chamber, a transition space can be provided for the transfer of the substrate 6 between the reactive etching chamber, the test chamber 4, and the growth chamber, enabling the substrate 6 to be automatically transferred between different chambers, reducing manual intervention, ensuring the independent operation of each chamber, and allowing the processing sequence to be adjusted or specific steps to be repeated according to process requirements.

[0084] In one embodiment, in order to form impurity compounds from the impurity elements on the surface of the substrate 6 and immediately discharge them, effectively removing the impurity elements on the surface of the substrate 6 and reducing the influence of impurities on subsequent epitaxial growth, the reactive etching chamber 3 is equipped with a gas injection system 32 and an exhaust system 33.

[0085] For nitride single crystal substrates and specific impurity elements (such as Si, O), corresponding etching gases and reaction gases are configured. The gas injection system 32 is used to inject the etching gases and reaction gases into the reactive etching chamber 3, ensuring the high efficiency of impurity removal and the high quality of epitaxial growth. Among them, the reaction gas is used to react with the impurity elements on the surface of the substrate 6 to obtain impurity compounds.

[0086] Furthermore, the impurity elements include a first impurity and a second impurity element. The first impurity element includes the Si element, and the second impurity element includes the O element; the reaction gas includes H2 and a carbon-based gas, and the carbon-based gas includes CH4. In addition, the etching gas is used to etch the impurity compounds. Specifically, the etching gas includes a chlorine-based gas, a fluorine-based gas, and / or a bromine-based gas. The chlorine-based gas includes CCl4, the fluorine-based gas includes SF6, and the bromine-based gas includes HBr.

[0087] During application, first, CH4 and H2 are introduced. H2 reacts with the O element to convert the unstable O element into stable H2O, which exists in the form of water vapor to lock the impurity element O and prevent it from diffusing into the epitaxial structure. CH4 reacts with the Si element to convert the unstable Si element into stable SiC to lock the impurity element Si and prevent it from diffusing into the epitaxial structure. Then, the etching gases: CCl4 and SF6, or CCl4 and HBr, or HBr and SF6 are introduced to etch and remove SiC; the etching gas reacts with SiC to generate gases such as SiF4, CF4, SF2, or SF4, which are discharged through the exhaust system 33.

[0088] During actual application, the gas injection system 32 should be able to support the mixing and flow control of multiple gases (such as carbon-based gases, hydrogen, chlorine-based gases, fluorine-based gases, bromine-based gases).

[0089] The exhaust system 33 is used to discharge excess gas to carry water vapor out of the reactive etching chamber 3. During application, the exhaust system 33 has high-efficient vacuum pumping ability to ensure a high-vacuum environment is maintained inside the chamber.

[0090] During actual application, after water vapor is effectively removed, etching gas is introduced to etch and remove SiC.

[0091] During actual application, to optimize the spatial layout of the growth device, reduce the overall volume, and facilitate the transfer of the substrate 6, refer to Figure 1 , the reactive etching chamber 3, the test chamber 4, and the growth chamber of the present invention are arranged around the transfer chamber 1.

[0092] During application, to comprehensively analyze and characterize the elements on the surface of the substrate 6 and ensure the quality of the substrate 6 before epitaxial growth, the test chamber 4 of the present invention is configured with a test system. Specifically, the test system includes a Secondary Ion Mass Spectrometry (SIMS) test system, an X-ray photoelectron spectroscopy (XPS) test system, and / or an Energy Dispersive Spectrometer (EDS) test system.

[0093] During actual application, the etched substrate 6 is immediately tested and characterized through the test chamber 4, and a corresponding feedback mechanism is combined to ensure that each process step achieves the expected effect, which can improve the quality of epitaxial growth.

[0094] During application, as Figure 1 shown, the growth chamber includes: a first epitaxial chamber 21 and a second epitaxial chamber 22. The first epitaxial chamber 21 and the second epitaxial chamber 22 are used for epitaxial growth in different stages and are arranged adjacent to each other, facilitating rapid switching between different growth processes and improving production efficiency.

[0095] In practical applications, in order to enable the growth device to adapt to different epitaxial growth requirements and expand the applicable range of the growth device, the first epitaxial chamber 21 of the present invention is a MOCVD (Metal-organic Chemical Vapor Deposition) epitaxial chamber or an MBE (Molecular beam epitaxy) epitaxial chamber for epitaxial growth. The growth temperature is usually 1000 - 1100 °C (for example: 1000 °C, 1010 °C, 1020 °C, 1030 °C, 1040 °C, 1050 °C, 1060 °C, 1070 °C, 1080 °C, 1090 °C or 1100 °C), and the growth pressure is usually 100 - 500 Torr (for example: 100 Torr, 150 Torr, 200 Torr, 250 Torr, 300 Torr, 350 Torr, 400 Torr, 450 Torr or 500 Torr); the second epitaxial chamber 22 is an HVPE epitaxial chamber for epitaxial growth. The growth temperature is usually 1000 - 1100 °C (for example: 1000 °C, 1010 °C, 1020 °C, 1030 °C, 1040 °C, 1050 °C, 1060 °C, 1070 °C, 1080 °C, 1090 °C or 1100 °C), and the growth pressure is usually atmospheric pressure or low pressure.

[0096] During application, the growth device of the semiconductor device of the invention may further include: a gate valve assembly 5. The transfer chamber 1 includes a transfer cavity body, and the transfer cavity body is provided with: a first window, a second window, a third window and a fourth window to connect different chambers through different windows, ensuring the rapid transfer of the substrate 6 between various process steps and reducing the process time. Specifically, the first window is used to connect the transfer chamber 1 and the first epitaxial chamber 21 through the gate valve assembly 5; the second window is used to connect the transfer chamber 1 and the second epitaxial chamber 22 through the gate valve assembly 5; the third window is used to connect the transfer chamber 1 and the reactive etching chamber 3 through the gate valve assembly 5; the fourth window is used to connect the transfer chamber 1 and the test chamber 4 through the gate valve assembly 5.

[0097] In practical applications, in order to achieve the automatic transfer of the substrate 6 and reduce the errors and contamination caused by manual operations, the transfer chamber 1 of the present invention is configured with a manipulator for delivering the substrate 6 to the reactive etching chamber 3, the test chamber 4 or the growth chamber. Preferably, a tray is provided on the manipulator to place the substrate 6 on the tray.

[0098] In order to make the connection and isolation between each chamber more precise, avoid the gas cross-contamination between different process steps, and improve the purity of the process, the present invention uses the gate valve assembly 5 to control the connection or isolation between the transfer chamber 1 and the reactive etching chamber 3, the test chamber 4 or the growth chamber.

[0099] During application, to control the connection and isolation between different chambers, ensure the independence and accuracy of each process step, and avoid cross-contamination of gases and impurities, the gate valve assembly 5 of the present invention includes: a first valve 51, a second valve 54, a third valve 52, and a fourth valve 53. Specifically, the first valve 51 is disposed at the first window for controlling the connection and isolation between the transfer chamber 1 and the first epitaxial chamber 21; the second valve 54 is disposed at the second window for controlling the connection and isolation between the transfer chamber 1 and the second epitaxial chamber 22; the third valve 52 is disposed at the third window for controlling the connection and isolation between the transfer chamber 1 and the third epitaxial chamber; the fourth valve 53 is disposed at the fourth window for controlling the connection and isolation between the transfer chamber 1 and the fourth epitaxial chamber.

[0100] The growth method of the semiconductor device of the present invention is applied to the above-mentioned growth device of the semiconductor device and is completed under vacuum conditions.

[0101] Reference Figure 2 , the growth method of the present invention includes steps a1-d1, which are specifically as follows:

[0102] Step a1: Transfer the substrate 6 into the reaction etching chamber 3 through the transfer chamber 1.

[0103] Step b1: First introduce a reaction gas into the reaction etching chamber 3, and then introduce an etching gas into the reaction etching chamber 3 to remove the impurity elements on the surface of the substrate 6.

[0104] During application, the substrate 6 is a nitride single crystal substrate; the impurity elements include a first impurity and a second impurity element, the first impurity element includes Si element, and the second impurity element includes O element; the reaction gas includes H2 and a carbon-based gas, and the carbon-based gas includes CH4. In addition, the etching gas is used to etch the impurity compound. Specifically, the etching gas includes a chlorine-based gas, a fluorine-based gas, and / or a bromine-based gas. The chlorine-based gas includes CCl4, the fluorine-based gas includes SF6, and the bromine-based gas includes HBr.

[0105] In actual application, first introduce CH4 and H2. H2 reacts with the O element to convert the unstable O element into stable H2O, and H2O exists in the form of water vapor to lock the impurity element O and prevent it from diffusing into the epitaxial structure. CH4 reacts with the Si element to convert the unstable Si element into stable SiC to lock the impurity element Si and prevent it from diffusing into the epitaxial structure. Then, introduce the etching gas: CCl4 and SF6, or CCl4 and HBr, or HBr and SF6 to etch and remove SiC.

[0106] Preferably, to meet the growth requirements of homogeneous epitaxial nitride vertical devices, the flow rates, durations, and ratios of reaction gases and etching gases can be controlled to ensure the efficiency and consistency of impurity removal and epitaxial growth. For example: the flow rate of the reaction gas is 0.1 - 10 m / s (such as: 0.1 m / s, 0.5 m / s, 1 m / s, 2 m / s, 3 m / s, 4 m / s, 5 m / s, 6 m / s, 7 m / s, 8 m / s, 9 m / s, or 10 m / s), and the introduction duration is 10 - 1000 s (such as: 10 s, 50 s, 100 s, 200 s, 300 s, 400 s, 500 s, 600 s, 700 s, 800 s, 900 s, or 1000 s) to ensure sufficient generation of H2O and SiC without causing side reactions due to excessive time. In addition, the flow rate of the etching gas is 0.1 - 1 m / s (such as: 0.1 m / s, 0.2 m / s, 0.3 m / s, 0.4 m / s, 0.5 m / s, 0.6 m / s, 0.7 m / s, 0.8 m / s, 0.9 m / s, or 1 m / s), and the introduction duration is 10 - 100 s (such as: 10 s, 20 s, 30 s, 40 s, 50 s, 60 s, 70 s, 80 s, 90 s, or 100 s). In some embodiments, the reaction gas includes a carbon-based gas and hydrogen, and the volume ratio of the carbon-based gas to hydrogen is 1:(100 - 10000). The etching gas includes a chlorine-based gas and a fluorine-based gas, and the volume ratio of the chlorine-based gas to the fluorine-based gas is 1:(1 - 10). In some other embodiments, the etching gas includes a chlorine-based gas and a bromine-based gas, and the volume ratio of the chlorine-based gas to the bromine-based gas is (3 - 2):1 (such as: 2:1, 2.1:1, 2.2:1, 2.3:1, 2.4:1, 2.5:1, 2.6:1, 2.7:1, 2.8:1, 2.9:1, or 3:1). In some other embodiments, the etching gas includes a fluorine-based gas and a bromine-based gas, and the volume ratio of the fluorine-based gas to the bromine-based gas is (5 - 4):1 (such as: 4:1, 4.1:1, 4.2:1, 4.3:1, 4.4:1, 4.5:1, 4.6:1, 4.7:1, 4.8:1, 4.9:1, or 5:1). In the actual production process, the volume ratio can be adjusted to the ratio of molar amounts according to the actual situation.

[0107] Step c1: Transfer the etched substrate 6 into the test chamber 4 through the transfer chamber 1, and test and characterize the etched substrate 6 to obtain the first test result. Among them, the first test result includes the surface element content and types of the substrate 6.

[0108] Step d1: When the test result meets the first preset requirement, transfer the etched substrate 6 into the growth chamber through the transfer chamber 1, and grow an epitaxial structure on the substrate 6 to obtain a semiconductor device.

[0109] Further, the growth method may further include: step e1.

[0110] Step e1: When the first test result does not meet the first preset requirement, repeat steps a1 to c1 until the first test result meets the first preset requirement.

[0111] In application, when the first test result of the present invention does not meet the first preset requirement, it can enter the first feedback mechanism, for example, repeat steps a1 to c1 to ensure that the surface quality of the substrate 6 meets the requirements, improving the reliability of the process.

[0112] In actual application, the first preset requirement includes: the concentrations of the first impurity element and the second impurity element on the surface of the substrate 6 are both less than or equal to 1×10 17 cm 3 , and at this time, the breakdown voltage of the surface of the substrate 6 is greater than or equal to 1000V. Preferably, the first preset requirement includes: the concentrations of the first impurity element and the second impurity element on the surface of the substrate 6 are both less than or equal to 1×10 16 cm 3 , and at this time, the breakdown voltage of the surface of the substrate 6 is greater than or equal to 10000V.

[0113] In application, the epitaxial structure includes m structural layers, where m≥1.

[0114] In actual application, as Figure 3 shown, step d1 includes: steps d11 - d15.

[0115] Step d11: Transfer the current device structure into the reactive etching chamber 3.

[0116] Step d12: First, introduce a reactive gas into the reactive etching chamber 3, and then introduce an etching gas into the reactive etching chamber 3 to remove the impurity elements on the surface of the current device structure.

[0117] Among them, the initial structure of the current device structure is a substrate 6 and the first structural layer of the epitaxial growth stacked on each other.

[0118] Step d13: Transfer the currently etched device structure into the test chamber 4 through the transfer chamber 1, and test and characterize the current device structure to obtain a second test result, where the second test result includes the surface element content and types of the current device structure.

[0119] Step d14: When the second test result meets the second preset requirement, transfer the currently etched device structure into the growth chamber through the transfer chamber 1 to grow the next structural layer on the current device structure to obtain an intermediate structure.

[0120] Further, the growth method may further include step d15.

[0121] Step d15: When the second test result does not meet the second preset requirement, record the intermediate structure as the current device structure, and repeat steps d11 to d13 until the second test result of the structural layer of the m-th layer meets the second preset requirement.

[0122] In application, when the second test result of the present invention does not meet the first preset requirement, it can enter the second feedback mechanism, for example, repeat steps d11 to d13 to ensure that the surface quality of the structural layer of the m-th layer meets the requirements, improving the reliability of the process.

[0123] In actual application, the second preset requirement includes: the concentrations of the first impurity element and the second impurity element on the surface of the structural layer of the n-th layer are both less than or equal to 1×10 17 cm 3 , and at this time, the breakdown voltage of the surface of the structural layer of the n-th layer is greater than or equal to 1000V. Preferably, the second preset requirement includes: the concentrations of the first impurity element and the second impurity element on the surface of the structural layer of the n-th layer are both less than or equal to 1×10 16 cm 3 , and at this time, the breakdown voltage of the surface of the structural layer of the n-th layer is greater than or equal to 10000V. Among them, 0 < n ≤ m, and m in this embodiment is equal to 3.

[0124] In application, the semiconductor device is a homoepitaxial nitride vertical device, the epitaxial structure includes 3 structural layers, and the thickness of each structural layer is less than 1μm. Preferably, the 3 structural layers include an I-type layer, a P-type layer, and an N-type layer. The P-type layer and the N-type layer are grown using the first epitaxial cavity 21, and the I-type layer is grown using the second epitaxial cavity 22.

[0125] When growing the N-type layer, trimethylgallium (TMGa), NH3, N2, H2, and SiH4 are introduced. Among them, N2 and H2 are carrier gases. The molar amount of NH3 is about half of the molar amount of the carrier gas. The molar amount of TMGa is one-thousandth of the molar amount of NH3. The molar amount of SiH4 is 1 / 100 to 1 / 1000 of the molar amount of TMGa. The introduced flow rate is about 1m / s, and the introduction duration is related to the required thickness of the target device. Among them, the N-type layer is N-type GaN.

[0126] When growing the P-type layer, TMGa, NH3, N2, H2, and MgCp2 are introduced. Among them, N2 and H2 are carrier gases. The molar amount of NH3 is about half of the carrier gas. The molar amount of TMGa is one-thousandth of the molar amount of NH3. The molar amount of MgCp2 is 1 / 10 to 1 / 100 of the molar amount of TMGa. The introduced flow rate is about 1m / s, and the introduction duration is related to the required thickness of the target device. Among them, the P-type layer is P-type GaN.

[0127] When growing the type-I layer, TMGa, NH3, N2, and H2 are introduced. Among them, N2 and H2 are carrier gases. The molar amount of NH3 is about half of the molar amount of the carrier gases. The molar amount of TMGa is one-thousandth of the molar amount of NH3. The introduced flow rate is about 1 m / s, and the introduction duration is related to the thickness required for the target device. Among them, the type-I layer is type-I GaN.

[0128] The present invention also introduces a growth system for semiconductor devices.

[0129] In order to achieve the automatic control of the growth process of semiconductor devices, reduce human errors, improve production efficiency and process consistency, and improve the yield and quality of semiconductor devices, the above-mentioned growth device and control device of semiconductor devices are integrated into the growth system of semiconductor devices.

[0130] During application, the control device is connected to the growth device of the semiconductor device and is used to drive the growth device of the semiconductor device to execute the above-mentioned growth method of the semiconductor device to grow the semiconductor device.

[0131] In order to make the objectives, technical solutions, and advantages of the present invention clearer, the present invention will be further described in detail with examples and comparative examples. It should be understood that the specific examples described herein are only used to explain the present invention and are not used to limit the present invention.

[0132] Example 1: Fabricating a semiconductor device

[0133] Step S11: Transfer the cleaned nitride single crystal substrate into the reaction etching chamber 3 through the transfer chamber 1.

[0134] Step S12: Introduce a reaction gas with a flow rate of 0.5 m / s and a duration of 300 s into the reaction etching chamber 3, and then introduce an etching gas with a flow rate of 0.5 m / s and a duration of 50 s.

[0135] Step S13: Transfer the nitride single crystal substrate after etching treatment into the test chamber 4 to test the surface element content and types thereof to ensure compliance with the first preset requirements.

[0136] The first preset requirements include: the concentrations of the first impurity element and the second impurity element on the surface of the nitride single crystal substrate are both less than or equal to 1×10 17 cm 3 , and the breakdown voltage on the surface of the nitride single crystal substrate is greater than or equal to 1000 V at this time.

[0137] Step S14: When the test result meets the first preset requirements, transfer the nitride single crystal substrate into the second epitaxial chamber 22 to grow a type-I layer on the nitride single crystal substrate to obtain a first intermediate structure.

[0138] Step S21: Transfer the first intermediate structure into the reactive etching chamber 3 through the transfer chamber 1.

[0139] Step S22: Introduce CH4 and H2 with a volume ratio of 1:100 into the reactive etching chamber 3 at a flow rate of 0.1 m / s for a duration of 10 s; then introduce CCl4 and SF6 with a volume ratio of 1:1 at a flow rate of 0.1 m / s for a duration of 10 s. Step S23: Transfer the first intermediate structure after etching treatment into the test chamber 4 to test the surface element content and types to ensure compliance with the second preset requirements.

[0140] The second preset requirements include: the concentrations of the first impurity element and the second impurity element on the surface of the structural layer of the nth layer are both less than or equal to 1×10 17 cm 3 , and the breakdown voltage of the surface of the structural layer of the nth layer is greater than or equal to 1000 V. Among them, 0 < n ≤ m, and m in this embodiment is equal to 3.

[0141] Step S24: When the test results meet the second preset requirements, transfer the first intermediate structure into the first epitaxial chamber 21 to grow a P-type layer on the first intermediate structure to obtain a second intermediate structure.

[0142] Step S31: Transfer the second intermediate structure into the reactive etching chamber 3 through the transfer chamber 1.

[0143] Step S32: Introduce CH4 and H2 with a volume ratio of 1:100 into the reactive etching chamber 3 at a flow rate of 0.1 m / s for a duration of 10 s; then introduce CCl4 and SF6 with a volume ratio of 1:1 at a flow rate of 0.1 m / s for a duration of 10 s.

[0144] Step S33: Transfer the second intermediate structure after etching treatment into the test chamber 4 to test the surface element content and types to ensure compliance with the second preset requirements.

[0145] Step S34: When the test results meet the second preset requirements, transfer the second intermediate structure into the first epitaxial chamber 21 to grow an N-type layer on the second intermediate structure to obtain a third intermediate structure, i.e., a semiconductor device.

[0146] The semiconductor device obtained in this embodiment is a GaNFET (Field Effect Transistor) device. The performance parameters of the GaNFET device include: a switching frequency of 16 kHz, a breakdown voltage value of 600 V, and a specific on-resistance of 5 mΩ.

[0147] Example 2: Fabrication of a semiconductor device

[0148] The difference between Example 2 and Example 1 is that:

[0149] The volume ratio of CH4 to H2 is 1:5000. The flow rate of the reaction gas is 5 m / s, and the introduction duration is 500 s.

[0150] The volume ratio of CCl4 to SF6 is 1:5. The flow rate of the etching gas is 5 m / s, and the introduction duration is 50 s.

[0151] The semiconductor device obtained in this embodiment is a GaNFET device. The performance parameters of the GaNFET device include: the switching frequency is 35 kHz, the breakdown voltage is 800 V, and the specific on-resistance is 8 mΩ.

[0152] Example 3: Fabricating a semiconductor device

[0153] The difference between Example 3 and Example 1 is that:

[0154] The volume ratio of CH4 to H2 is 1:10000. The flow rate of the reaction gas is 10 m / s, and the introduction duration is 1000 s.

[0155] The volume ratio of CCl4 to SF6 is 1:10. The flow rate of the etching gas is 1 m / s, and the introduction duration is 100 s.

[0156] The semiconductor device obtained in this embodiment is a GaNFET device. The performance parameters of the GaNFET device include: the switching frequency is 68 kHz, the breakdown voltage is 400 V, and the specific on-resistance is 6 mΩ.

[0157] Example 4: Fabricating a semiconductor device

[0158] The difference between Example 4 and Example 1 is that:

[0159] The etching gas includes CCl4 and HBr, and the volume ratio of CCl4 to HBr is 3:1. The flow rate of the etching gas is 0.1 m / s, and the introduction duration is 10 s.

[0160] The semiconductor device obtained in this embodiment is a GaNFET device. The performance parameters of the GaNFET device include: the switching frequency is 48 kHz, the breakdown voltage is 1100 V, and the specific on-resistance is 10 mΩ.

[0161] Example 5: Fabricating a semiconductor device

[0162] The difference between Example 5 and Example 1 is that:

[0163] The etching gas includes CCl4 and HBr, and the volume ratio of CCl4 to HBr is 2.5:1. The flow rate of the etching gas is 0.5 m / s, and the introduction duration is 50 s.

[0164] The semiconductor device obtained in this embodiment is a GaNFET device. The performance parameters of the GaNFET device include: a switching frequency of 16 kHz, a breakdown voltage of 600 V, and a specific on-resistance of 5 mΩ.

[0165] Example 6: Fabricating a Semiconductor Device

[0166] The difference between Example 6 and Example 1 is that:

[0167] The etching gas includes CCl4 and HBr, and the volume ratio of CCl4 to HBr is 2:1. The flow rate of the etching gas is 1 m / s, and the introduction duration is 100 s.

[0168] The semiconductor device obtained in this embodiment is a GaNFET device. The performance parameters of the GaNFET device include: a switching frequency of 48 kHz, a breakdown voltage of 500 V, and a specific on-resistance of 7.5 mΩ.

[0169] Example 7: Fabricating a Semiconductor Device

[0170] The difference between Example 7 and Example 1 is that:

[0171] The etching gas includes SF6 and HBr, and the volume ratio of SF6 to HBr is 5:1. The flow rate of the etching gas is 0.1 m / s, and the introduction duration is 10 s.

[0172] The semiconductor device obtained in this embodiment is a GaNFET device. The performance parameters of the GaNFET device include: a switching frequency of 90 kHz, a breakdown voltage of 750 V, and a specific on-resistance of 5.5 mΩ.

[0173] Example 8: Fabricating a Semiconductor Device

[0174] The difference between Example 8 and Example 1 is that:

[0175] The etching gas includes SF6 and HBr, and the volume ratio of SF6 to HBr is 4.5:1. The flow rate of the etching gas is 0.5 m / s, and the introduction duration is 50 s.

[0176] The semiconductor device obtained in this embodiment is a GaNFET device. The performance parameters of the GaNFET device include: a switching frequency of 62 kHz, a breakdown voltage of 450 V, and a specific on-resistance of 3.5 mΩ.

[0177] Example 9: Fabricating a Semiconductor Device

[0178] The difference between Example 9 and Example 1 is that:

[0179] The etching gas includes SF6 and HBr, and the volume ratio of SF6 to HBr is 4:1. The flow rate of the etching gas is 1 m / s, and the introduction duration is 100 s.

[0180] The semiconductor device obtained in this embodiment is a GaNFET device. The performance parameters of the GaNFET device include: the switching frequency is 45 kHz, the breakdown voltage is 800 V, and the specific on-resistance is 8.5 mΩ.

[0181] Compared with the prior art, there are many drawbacks in completing the whole device in a single epitaxial chamber (such as MOCVD / MBE epitaxial chamber). First, when directly growing using the MOCVD / MBE epitaxial chamber, due to the lack of an etching step for difficult-to-remove impurities such as Si and O, impurity elements are likely to accumulate at the epitaxial interface, forming a leakage channel of the device. In addition, most of the etching schemes in the prior art are traditional methods and cannot completely remove Si and O impurities at the nitride epitaxial interface.

[0182] Secondly, growing all layers of the PIN structure, especially the drift layer (type-I layer) as the breakdown voltage layer, in the MOCVD / MBE epitaxial chamber is difficult to achieve the best process effect. The background concentration of the type-I layer in the MOCVD / MBE epitaxial chamber is relatively high and cannot reach the low concentration level in the HVPE epitaxial chamber. At the same time, since the type-I layer is usually thick, the growth cost in the MOCVD / MBE epitaxial chamber is much higher than that in the HVPE epitaxial chamber.

[0183] The present invention adopts a reaction chamber cluster with vacuum interconnection, and the whole process does not need to be exposed to the atmosphere. By setting up a reaction etching chamber, it can effectively remove difficult-to-etch Si elements and O elements. The specific steps include: first, converting impurity elements into resolvable materials through deposition, and then performing mixed etching to completely remove impurities. In addition, etching can be carried out before each epitaxy to remove impurity parasitic elements on the surface of the nitride single crystal substrate, ensuring a high-quality interface between layers. It can be seen that the present invention allows growth between different growth chambers (for example: the first epitaxial chamber, the second epitaxial chamber), giving full play to the advantages of each reaction chamber, thereby realizing the optimization of device production and the minimization of cost. At the same time, the growth device of the present invention is equipped with a test chamber, which can specifically calibrate the content of interface elements, and ensure the timeliness and integrity of the process according to different device performance requirements. This provides a guarantee for the precise control of the system.

[0184] Although the embodiments of the present invention have been shown and described above, it can be understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those of ordinary skill in the art can make changes, modifications, substitutions, and variations to the above embodiments within the scope of the present invention without departing from the principle and spirit of the present invention, and all these changes should fall within the protection scope of the claims of the present invention.

Claims

1. A semiconductor device growth device, characterized in that: The growing device comprises: A reactive etching chamber (3), the reactive etching chamber (3) being provided with a gas injection system (32) and an exhaust system (33), the gas injection system (32) being used to inject etching gas and reaction gas, the reaction gas being used to react with impurity elements on the surface of a substrate (6) to obtain impurity compounds, the etching gas being used to etch the impurity compounds; and the exhaust system (33) being used to exhaust the impurity compounds; A test chamber (4) is used to test and characterize the substrate (6) after the etching process to obtain a test result, wherein the test result includes the content and type of surface elements of the substrate (6); A growth chamber, used for epitaxially growing an epitaxial structure on a substrate (6); A transfer chamber (1), the transfer chamber (1) is connected to the reaction etching chamber (3), the test chamber (4) and the growth chamber, and is used to provide a transition space when a substrate (6) is transferred between the reaction etching chamber, the test chamber (4) and the growth chamber.

2. The semiconductor device growth device according to claim 1, characterized in that: The growth device further comprises a gate valve assembly (5), wherein the gate valve assembly (5) is used to control the communication or isolation between the transfer chamber (1) and the reactive etching chamber (3), the test chamber (4) or the growth chamber; And / or, the reactive etching chamber (3), the test chamber (4) and the growth chamber are arranged around the transfer chamber (1).

3. The semiconductor device growth device according to claim 2, characterized in that: The growth chamber comprises: A first epitaxial chamber (21), wherein the first epitaxial chamber (21) is a MOCVD epitaxial chamber or an MBE epitaxial chamber, and is used for epitaxial growth; A second epitaxial chamber (22), wherein the second epitaxial chamber (22) is a HVPE epitaxial chamber and is used for epitaxial growth; The first epitaxial cavity (21) and the second epitaxial cavity (22) are arranged adjacent to each other, and the first epitaxial cavity (21) and the second epitaxial cavity (22) are both connected to the transmission cavity (1) via the gate valve assembly (5).

4. The semiconductor device growth device according to claim 3, characterized in that: The transmission chamber (1) comprises a transmission chamber body, and the transmission chamber body is provided with: a first window, used to connect the transfer chamber (1) and the first extension chamber (21) via the gate valve assembly (5); a second window, used for connecting the transfer chamber (1) and the second extension chamber (22) via the gate valve assembly (5); A third window, used for connecting the transfer chamber (1) and the reactive etching chamber (3) via the gate valve assembly (5); A fourth window is used to connect the transmission chamber (1) and the test chamber (4) via the gate valve assembly (5).

5. The semiconductor device growth device according to claim 4, characterized in that: The gate valve assembly (5) comprises: a first valve (51), the first valve (51) being arranged at the first window and used for controlling the connection and isolation between the transmission chamber (1) and the first epitaxial chamber (21); a second valve (54), the second valve (54) being arranged at the second window and used for controlling the connection and isolation between the transmission chamber (1) and the second epitaxial chamber (22); a third valve (52), the third valve (52) being arranged at the third window and used for controlling the connection and isolation between the transfer chamber (1) and the third epitaxial chamber; A fourth valve (53), the fourth valve (53) is arranged at the fourth window, and is used to control the connection and isolation between the transmission chamber (1) and the fourth epitaxial chamber.

6. The semiconductor device growth device according to claim 1, characterized in that: The test chamber (4) is equipped with a test system, and the test system includes a SIMS test system, an XPS test system and / or an EDS test system; And / or, the transfer chamber (1) is equipped with a robot for delivering the substrate (6) to the reactive etching chamber (3), the test chamber (4) or the growth chamber; And / or, the substrate (6) is a nitride single crystal substrate; And / or, the impurity element includes a first impurity and a second impurity element, the first impurity element includes Si element, and the second impurity element includes O element; And / or, the etching gas includes a chlorine-based gas, a fluorine-based gas and / or a bromine-based gas, the chlorine-based gas includes CCl4, the fluorine-based gas includes SF6, and the bromine-based gas includes HBr; And / or, the reaction gas includes H 2 and a carbon-based gas, and the carbon-based gas includes CH 4 .

7. A method for growing a semiconductor device, characterized in that: The growth method is applied to the growth device of the semiconductor device according to any one of claims 1 to 6, and the growth method is performed under vacuum conditions; the growth method comprises the following steps: Step a1: transferring the substrate (6) into the reactive etching chamber (3) through the transfer chamber (1); Step b1: firstly introducing a reaction gas into the reaction etching chamber (3), and then introducing an etching gas into the reaction etching chamber (3) to remove impurity elements on the surface of the substrate (6); Step c1: transferring the etched substrate (6) into the test chamber (4) through the transfer chamber (1), and testing and characterizing the etched substrate (6) to obtain a first test result, wherein the first test result includes the surface element content and type of the substrate (6); Step d1: When the test result meets the first preset requirement, the etched substrate (6) is transferred into the growth chamber through the transfer chamber (1), and an epitaxial structure is grown on the substrate (6) to obtain a semiconductor device.

8. The method for growing a semiconductor device according to claim 7, characterized in that: The growth method further comprises step e1: when the first test result does not meet the first preset requirement, repeatedly performing steps a1 to c1 until the first test result meets the first preset requirement; and / or, the epitaxial structure comprises m structural layers, wherein m≥1; And / or, the step of growing an epitaxial structure on a substrate (6) to obtain a semiconductor device comprises: Step d11: transferring the current device structure into the reactive etching chamber (3); Step d12: firstly introducing a reaction gas into the reaction etching chamber (3), and then introducing an etching gas into the reaction etching chamber (3) to remove impurity elements on the surface of the current device structure; wherein the initial structure of the current device structure is a stacked substrate (6) and a first layer of epitaxial growth; Step d13: transferring the current device structure after the etching process to the test chamber (4) through the transfer chamber (1), and testing and characterizing the current device structure to obtain a second test result, wherein the second test result includes the surface element content and type of the current device structure; Step d14: when the second test result meets the second preset requirement, the current device structure after the etching process is transferred to the growth chamber through the transfer chamber (1) to grow the next structural layer on the current device structure to obtain an intermediate structure; Step d15: When the second test result does not meet the second preset requirement, the intermediate structure is recorded as the current device structure, and steps d11 to d13 are repeated until the second test result of the mth structural layer meets the second preset requirement.

9. The method for growing a semiconductor device according to claim 7, characterized in that: The semiconductor device is a homoepitaxial nitride vertical device, the growth cavity comprises a first epitaxial cavity (21) and a second epitaxial cavity (22) which are adjacently arranged, the epitaxial structure comprises three structural layers, the three structural layers comprise an I-type layer, a P-type layer and an N-type layer, the first epitaxial cavity (21) is used to grow the P-type layer and the N-type layer, and the second epitaxial cavity (22) is used to grow the I-type layer; wherein the first epitaxial cavity (21) and the second epitaxial cavity (22) adopt different growth processes; And / or, the flow rate of the reaction gas is 0.1-10 m / s, the introduction time is 10s-1000s, the reaction gas includes a carbon-based gas and hydrogen, and the volume ratio of the carbon-based gas to the hydrogen is 1:(100-10000); And / or, the flow rate of the etching gas is 0.1-1 m / s, the introduction time is 10s-100s, the etching gas includes chlorine-based gas and fluorine-based gas, and the volume ratio of the chlorine-based gas to the fluorine-based gas is 1:(1-10); And / or, the flow rate of the etching gas is 0.1-1 m / s, the introduction time is 10s-100s, the etching gas includes chlorine-based gas and bromine-based gas, and the volume ratio of the chlorine-based gas to the bromine-based gas is (3-2):1; And / or, the flow rate of the etching gas is 0.1-1 m / s, the introduction time is 10s-100s, the etching gas includes fluorine-based gas and bromine-based gas, and the volume ratio of the fluorine-based gas to the bromine-based gas is (5-4):

1.

10. A semiconductor device growth system, characterized in that: The growing system comprises: A semiconductor device growth device, wherein the semiconductor device growth device is the semiconductor device growth device according to any one of claims 1 to 6, and is used for growing a semiconductor device; A control device, the control device is connected to the growth device of the semiconductor device, and is used to drive the growth device of the semiconductor device to execute the growth method of the semiconductor device according to any one of claims 7-9.

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