AlN-based memristor with high consistency of operating voltage and preparation method of AlN-based memristor
By inserting a fuse layer with low thermal conductivity between the first AlN dielectric layer and the second AlN dielectric layer of the aluminum nitride-based memristor, the problem of difficult control of the fracture position of the conductive filament is solved, and the consistency of reset voltage and device stability are improved.
Patent Information
- Application Number
- CN202510168989.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-02-17
- Publication Date
- 2025-06-20
AI Technical Summary
During the reset process of traditional aluminum nitride-based memristors, the fracture position of the conductive filament is difficult to control, resulting in poor consistency of the reset voltage, affecting the stability and reliability of the device.
By inserting a fuse layer with low thermal conductivity between the first AlN dielectric layer and the second AlN dielectric layer, the fracture position of the conductive filament is limited so that it breaks only within the low thermal conductivity fuse layer, and effective control of the fracture position of the conductive filament is achieved.
Improves the consistency of reset voltage and enhances the stability and reliability of the device.
Smart Images
Figure CN120187276A_ABST
Abstract
Description
Technical Field
[0001] The present invention belongs to the field of semiconductor technology, and particularly relates to an AlN-based memristor with high operating voltage consistency and a preparation method thereof. Background Art
[0002] Non-volatile memories play an increasingly important role in the post-Moore era. Resistive random access memory (RRAM), also known as a memristor, has attracted much attention since its emergence due to the advantages of fast operation, low power consumption, and large-scale integration, and is one of the most promising candidates for next-generation non-volatile memories and memories.
[0003] In recent years, aluminum nitride (AlN) has been considered a potential material for preparing memristors due to its wide bandgap, high thermal conductivity, and strong insulation properties. During the operation of an AlN-based memristor, the formation and rupture of conductive filaments are the key to determining its resistance state transition. In the reset process of traditional AlN-based memristors, the rupture position of the conductive filaments is often difficult to control, and the fusing position has extremely strong randomness, which results in poor consistency of the reset voltage, large fluctuations in the reset voltage, and low operating voltage consistency of the device, affecting the overall stability and reliability of the device. Summary of the Invention
[0004] In order to solve the above problems existing in the prior art, the present invention provides an AlN-based memristor with high operating voltage consistency and a preparation method thereof. The technical problems to be solved by the present invention are realized through the following technical solutions:
[0005] The first aspect of the present invention provides an AlN-based memristor with high operating voltage consistency, including: a substrate layer, an adhesion layer, a bottom electrode layer, a first AlN dielectric layer, a low thermal conductivity melting layer, a second AlN dielectric layer, a top electrode, and a protective layer, wherein,
[0006] The substrate layer, the adhesion layer, and the bottom electrode layer are sequentially arranged from bottom to top;
[0007] The first AlN dielectric layer is disposed on a partial upper surface of the bottom electrode layer;
[0008] The low thermal conductivity melting layer, the second AlN dielectric layer, the top electrode, and the protective layer are sequentially arranged from bottom to top on the upper surface of the first AlN dielectric layer;
[0009] The thermal conductivity of the low thermal conductivity melting layer is less than that of AlN;
[0010] When a positive voltage is applied, conductive filaments are formed inside the first AlN dielectric layer, the low thermal conductivity melting layer, and the second AlN dielectric layer;
[0011] When a reverse voltage is applied, the conductive filaments inside the low thermal conductivity melting layer break.
[0012] In an achievable manner, the material of the low thermal conductivity melting layer includes Al2O3.
[0013] In an achievable manner, the material of the substrate layer includes a Si / SiO2 stack.
[0014] In an achievable manner, the material of the adhesion layer includes Ti with a thickness of 5 - 15 nm;
[0015] The material of the bottom electrode layer includes Pt with a thickness of 50 - 150 nm.
[0016] In an achievable manner, the thickness of the first AlN dielectric layer is 3 - 5 nm;
[0017] The thickness of the low thermal conductivity melting layer is 1 - 3 nm;
[0018] The thickness of the second AlN dielectric layer is 3 - 5 nm.
[0019] In an achievable manner, the material of the top electrode includes Al with a thickness of 50 - 150 nm;
[0020] The material of the protective layer includes Au with a thickness of 50 - 150 nm.
[0021] The second aspect of the present invention provides a method for preparing an AlN - based memristor with high operation voltage consistency, including the following steps:
[0022] S1: Obtain a substrate layer;
[0023] S2: Sequentially prepare an adhesion layer and a bottom electrode layer from bottom to top on the upper surface of the substrate layer;
[0024] S3: Prepare a first AlN dielectric layer on a partial upper surface of the bottom electrode layer;
[0025] S4: Prepare a low thermal conductivity melting layer on the upper surface of the first AlN dielectric layer; the thermal conductivity of the low thermal conductivity melting layer is less than that of AlN;
[0026] S5: Prepare a second AlN dielectric layer on the upper surface of the low thermal conductivity melting layer;
[0027] S6: Prepare a top electrode and a protective layer on the upper surface of the second AlN dielectric layer in sequence from bottom to top; when a forward voltage is applied, conductive filaments are formed inside the first AlN dielectric layer, the low-thermal-conductivity melting layer, and the second AlN dielectric layer; when a reverse voltage is applied, the conductive filaments inside the low-thermal-conductivity melting layer break.
[0028] In an implementable manner, S4 includes the following steps:
[0029] Grow Al2O3 on the upper surface of the first AlN dielectric layer to form a low-thermal-conductivity melting layer.
[0030] In an implementable manner, the specific operation of S3 is:
[0031] Grow AlN on a partial upper surface of the bottom electrode layer through an ALD process or a magnetron sputtering process to form a first AlN dielectric layer.
[0032] In an implementable manner, the specific operation of S3 is:
[0033] Grow AlN with a thickness of 3 - 5 nm on a partial upper surface of the bottom electrode layer through an ALD process to form a first AlN dielectric layer; wherein, the metal precursor gas is trimethylaluminum, the flow rate of the metal precursor gas is 130 - 150 sccm, the temperature is 300 - 350 °C, the reaction gas is ammonia, and the flow rate of the reaction gas is 80 - 100 sccm.
[0034] Compared with the prior art, the beneficial effects of the present invention are:
[0035] The AlN-based memristor with high operation voltage consistency provided by the present invention inserts a low-thermal-conductivity melting layer between the first AlN dielectric layer and the second AlN dielectric layer, restricting the fracture position of the conductive filaments inside the low-thermal-conductivity melting layer. When a reverse voltage is applied to the device, only the conductive filaments inside the low-thermal-conductivity melting layer break, and the conductive filaments inside the first AlN dielectric layer and the second AlN dielectric layer are not affected, effectively controlling the fracture position of the conductive filaments, thereby making the consistency of the reset voltage higher and greatly increasing the device stability. Description of the Drawings
[0036] Figure 1 is a schematic structural diagram of an AlN-based memristor with high operation voltage consistency provided by an embodiment of the present invention;
[0037] Figure 2 is a flowchart of a preparation method of an AlN-based memristor with high operation voltage consistency provided by an embodiment of the present invention;
[0038] Figures 3a to 3fIt is a step structure diagram of a preparation method of an AlN-based memristor with high operation voltage consistency provided by an embodiment of the present invention;
[0039] Figures 4a to 4c It is a performance comparison diagram between an AlN-based memristor with high operation voltage consistency provided by an embodiment of the present invention and a traditional device.
[0040] Reference numerals:
[0041] 1: Substrate layer; 2: Adhesion layer; 3: Bottom electrode layer; 4: First AlN dielectric layer; 5: Low thermal conductivity melting layer; 6: Second AlN dielectric layer; 7: Top electrode; 8: Protective layer. Detailed implementation manners
[0042] The following further describes the present invention in detail with reference to specific embodiments, but the implementation manners of the present invention are not limited thereto.
[0043] Embodiment 1
[0044] Please refer to Figure 1 , Figure 1 It is a schematic structural diagram of an AlN-based memristor with high operation voltage consistency provided by an embodiment of the present invention.
[0045] An AlN-based memristor with high operation voltage consistency provided by this embodiment includes: a substrate layer 1, an adhesion layer 2, a bottom electrode layer 3, a first AlN dielectric layer 4, a low thermal conductivity melting layer 5, a second AlN dielectric layer 6, a top electrode 7, and a protective layer 8. Among them, the substrate layer 1, the adhesion layer 2, and the bottom electrode layer 3 are sequentially arranged from bottom to top. The first AlN dielectric layer 4 is arranged on a part of the upper surface of the bottom electrode layer 3. The low thermal conductivity melting layer 5, the second AlN dielectric layer 6, the top electrode 7, and the protective layer 8 are sequentially arranged from bottom to top on the upper surface of the first AlN dielectric layer 4. The thermal conductivity of the low thermal conductivity melting layer 5 is less than that of AlN. When a positive voltage is applied, conductive filaments are formed inside the first AlN dielectric layer 4, the low thermal conductivity melting layer 5, and the second AlN dielectric layer 6. When a negative voltage is applied, the conductive filaments inside the low thermal conductivity melting layer 5 break.
[0046] Specifically, the first AlN dielectric layer 4, the low-thermal-conductivity melting layer 5, and the second AlN dielectric layer 6 serve as the functional layers of the device. When a voltage is applied across the two ends (the bottom electrode layer 3 and the top electrode 7) of the AlN-based memristor, the electric field will drive the migration of ions inside the device. Under the action of the electric field, the ions gradually migrate to the dielectric functional layer and form conductive filaments therein, causing the resistance to sharply decrease to the low-resistance state; when a reverse voltage is applied, the conductive filaments are partially broken or oxidized, the conductive channels are interrupted, and the resistance returns to the high-resistance state. In this embodiment, by utilizing the relationship between Joule heat and the breaking of conductive filaments, a low-thermal-conductivity melting layer 5 is inserted into the AlN dielectric layer, and the breaking position of the conductive filaments is limited inside the low-thermal-conductivity melting layer 5. That is, when a reverse voltage is applied, only the conductive filaments inside the low-thermal-conductivity melting layer 5 are broken, and the conductive filaments inside the first AlN dielectric layer 4 and the second AlN dielectric layer 6 are not affected, effectively controlling the breaking position of the conductive filaments, thereby making the consistency of the reset voltage higher and greatly increasing the device stability.
[0047] Furthermore, heat plays a key role in the process of the breaking of conductive filaments. When the voltage decreases or a reverse voltage is applied, affected by Joule heat, the semi-stable conductive filaments will break spontaneously. Since the thermal conductivity of the low-thermal-conductivity melting layer 5 is less than that of AlN, the Joule heat accumulated in the low-thermal-conductivity melting layer 5 is higher than that in the first AlN dielectric layer 4 and the second AlN dielectric layer 6 in the same time. Therefore, before the heat in the first AlN dielectric layer 4 and the second AlN dielectric layer 6 reaches the heat required to melt the conductive filaments, the conductive filaments will first melt in the low-thermal-conductivity melting layer 5, and the device becomes a high-resistance state.
[0048] In this embodiment, the material of the substrate layer 1 includes a Si / SiO2 stack. The material of the adhesion layer 2 includes Ti, and the thickness is 5 - 15 nm. The material of the bottom electrode layer 3 includes Pt, and the thickness is 50 - 150 nm. The thickness of the first AlN dielectric layer 4 is 3 - 5 nm. The material of the low-thermal-conductivity melting layer 5 includes Al2O3, and the thickness of the low-thermal-conductivity melting layer 5 is 1 - 3 nm. The thickness of the second AlN dielectric layer 6 is 3 - 5 nm. The material of the top electrode 7 includes Al, and the thickness is 50 - 150 nm. The material of the protection layer 8 includes Au, and the thickness is 50 - 150 nm.
[0049] Specifically, Al2O3 is a good material for the functional layer of a memristor, and the thermal conductivity of Al2O3 is less than that of AlN. Therefore, for AlN-based memristors, Al2O3 is a preferred material for the low-thermal-conductivity melting layer 5. In addition, the accumulation of heat may also have an adverse effect on the stability of the device. When the temperature rises to a certain level, the device may undergo irreversible thermal breakdown, resulting in device failure. Therefore, the thickness of the low-thermal-conductivity melting layer 5 in this embodiment is relatively thin, being 1 - 3 nm, which can prevent the device from getting too hot. Alumina, with its high resistivity and stable chemical properties, provides a clearer and more controllable interface for the fracture of the conductive filaments, thus significantly improving the consistency of the reset voltage and greatly enhancing the stability of the device during operation. The introduction of the alumina insertion layer not only changes the internal structure of the device but also reshapes its working principle to a certain extent, enabling a qualitative leap in the device's performance.
[0050] Please refer to Figure 2 , Figure 2 which is a flowchart of a method for fabricating an AlN-based memristor with high operational voltage consistency provided by an embodiment of the present invention. The second aspect of this embodiment provides a method for fabricating an AlN-based memristor with high operational voltage consistency, including the following steps:
[0051] S1: Obtain the substrate layer 1.
[0052] Specifically, as Figure 3a shown, obtain an Si / SiO2 stacked material as the substrate layer 1, and perform ultrasonic cleaning on the surface of the substrate layer 1. The cleaning process is divided into 3 steps: First, perform ultrasonic cleaning with acetone for 5 minutes, then perform ultrasonic cleaning with isopropyl alcohol for 5 minutes, and finally rinse with deionized water to rinse off the residual acetone and isopropyl alcohol liquids, and dry with a nitrogen gun. Observe that the surface of the substrate layer 1 is dry and free of contaminants. Through the above steps, impurities such as dust and organic substances on the surface of the substrate layer 1 can be removed, ensuring good adhesion between the substrate layer 1 and the upper deposited material. It should be noted that the Si / SiO2 stacked material is an Si layer and an SiO2 layer arranged in sequence from bottom to top.
[0053] S2: Sequentially fabricate an adhesion layer 2 and a bottom electrode layer 3 on the upper surface of the substrate layer 1 from bottom to top.
[0054] Specifically, as Figure 3b shown, use an electron beam evaporation device to first evaporate 5 - 15 nm of metal Ti on the cleaned silicon wafer to obtain the adhesion layer 2, and then evaporate 50 - 150 nm of metal Pt on the adhesion layer 2 to obtain the bottom electrode layer 3. During the electron beam evaporation process, the chamber temperature is 25°C, the vacuum degree is lower than 5×10 -4 Pa, and the deposition rate is
[0055] S3: Prepare the first AlN dielectric layer 4 on a partial upper surface of the bottom electrode layer 3.
[0056] In an implementable manner, the specific operation of S3 is as follows:
[0057] Grow AlN on a partial upper surface of the bottom electrode layer 3 through ALD process or magnetron sputtering process to form the first AlN dielectric layer 4.
[0058] In this embodiment, the specific operation of S3 is as follows:
[0059] Grow AlN with a thickness of 3 - 5 nm on a partial upper surface of the bottom electrode layer 3 through ALD process to form the first AlN dielectric layer 4; wherein, the metal precursor gas is trimethylaluminum, the flow rate of the metal precursor gas is 130 - 150 sccm, the temperature is 300 - 350 °C, the reaction gas is ammonia, and the flow rate of the reaction gas is 80 - 100 sccm.
[0060] Specifically, as Figure 3c shown, deposit the AlN thin film by using Thermal Atomic Layer Deposition (ALD) through ALD process. The specific preparation process is as follows: Use trimethylaluminum (TMA) and ammonia (NH3) as the metal precursor gas and the reaction gas respectively. Among them, the rate of trimethylaluminum is 130 - 150 sccm, the rate of ammonia is 80 - 100 sccm, and the substrate temperature is 400 - 450 °C. Each Thermal ALD cycle consists of a precursor injection process, a precursor cleaning process, a reactant injection process, and a reactant cleaning process. Then deposit a corresponding number of cycles to obtain the AlN thin film with the required thickness and form the first AlN dielectric layer 4. In this embodiment, the thickness of the AlN thin film is 3 - 5 nm. Further, a silicon wafer is used to block a part of the bottom electrode layer 3 during the growth process to expose a part of the bottom electrode layer 3.
[0061] In an implementable manner, the specific operation of S3 is as follows:
[0062] Perform DC reactive magnetron sputtering using a magnetron sputtering device, and the sputtering uses a metal Al target with a purity of 99.9995%. The vacuum is pumped to be lower than 1E -6Pa to ensure that the content of impurity gases in the chamber is low enough. The working gases are high-purity argon and high-purity nitrogen. The sample surface obtained by reverse sputtering bombardment of S2 with a radio frequency source with a sputtering power of 50 - 100 W for 8 minutes is used to remove the oxide layer on the sample surface and nitride the substrate surface. The Al target is pre-sputtered with a DC sputtering power of 50 - 100 W for 8 minutes to remove the oxide layer and impurities on the Al target surface. Then, the substrate temperature is set, and the substrate is heated to the target temperature. Finally, the argon-nitrogen mixed gas is introduced in proportion, the sputtering power and the substrate rotation speed are set, and the shutter is opened to start depositing the AlN film to obtain the first AlN dielectric layer 4.
[0063] S4: Prepare a low thermal conductivity melting layer 5 on the upper surface of the first AlN dielectric layer 4; the thermal conductivity of the low thermal conductivity melting layer 5 is less than that of AlN.
[0064] S4 includes the following steps:
[0065] As Figure 3d shown, grow Al2O3 on the upper surface of the first AlN dielectric layer 4 to form a low thermal conductivity melting layer 5.
[0066] In an achievable manner, a Thermal ALD is used to deposit the Al2O3 film. The specific preparation process is as follows: Trimethylaluminum (TMA) and H2O are used as the metal precursor gas and the reaction gas respectively. Among them, the rate of trimethylaluminum is 130 - 150 sccm, and the substrate temperature is 300 - 350 °C. Each Thermal ALD cycle consists of a precursor injection process, a precursor cleaning process, a reactant injection process, and a reactant cleaning process. A corresponding number of cycles are deposited to obtain an Al2O3 film with the required thickness. In this embodiment, the thickness of the Al2O3 film is 1 - 3 nm.
[0067] In another achievable manner, a magnetron sputtering device is used to deposit the Al2O3 film. The sputtering uses a metal Al target with a purity of 99.9995%. The vacuum is pumped to below 1E -6 Pa to ensure that the content of impurity gases in the chamber is low enough. The substrate temperature is 100 - 200 °C, and the sputtering power is 60 - 100 W. The working gases are high-purity argon and high-purity oxygen. The rate of argon is 10 - 50 sccm, and the rate of oxygen is 5 - 20 sccm.
[0068] Specifically, compared with the magnetron sputtering process, the ALD process can prepare thinner AlN films and Al2O3 films.
[0069] S5: Prepare a second AlN dielectric layer 6 on the upper surface of the low thermal conductivity melting layer 5.
[0070] As Figure 3eAs shown, a second AlN dielectric layer 6 is prepared on the upper surface of the low thermal conductivity melting layer 5 through an ALD process or a magnetron sputtering process. The specific process parameters are the same as those in step S3.
[0071] S6: A top electrode 7 and a protective layer 8 are sequentially prepared from bottom to top on the upper surface of the second AlN dielectric layer 6.
[0072] As Figure 3f shown, a layer of photoresist is spun on the second AlN dielectric layer 6. After exposure and development, a top electrode pattern window is formed. The method of magnetron sputtering is used to deposit Al metal with a thickness of 50 - 150 nm on the surface of the second AlN dielectric layer 6 covered with patterned photoresist and in the top electrode pattern window as the top electrode 7, and then Au with a thickness of 50 - 150 nm is deposited as the protective layer 8. The deposited sample is placed in acetone, and ultrasonic vibration is used to remove the photoresist and the metal on the photoresist, obtaining circular array top electrodes 7 and protective layer 8.
[0073] Through the preparation method provided in this embodiment, an aluminum nitride-based memristor with a functional layer thickness < 10 nm and highly consistent operating voltages can be obtained. This method is compatible with current microelectronic processes, and thus can be effectively applied to future silicon-based nanoelectronic devices. The preparation method provided in this embodiment is applicable to thin film aluminum nitride-based memristors prepared by ALD, and is also applicable to aluminum nitride-based memristors prepared by magnetron sputtering. When a positive voltage is applied, conductive filaments are formed inside the first AlN dielectric layer 4, the low thermal conductivity melting layer 5, and the second AlN dielectric layer 6. When a negative voltage is applied, the conductive filaments inside the low thermal conductivity melting layer 5 break, effectively controlling the breaking position of the conductive filaments, thereby making the consistency of the reset voltage higher and greatly increasing the device stability.
[0074] Furthermore, Figures 4a to 4c , Figure 4a is the cyclic characteristic curve graph of the AlN-based memristor (the low thermal conductivity melting layer is alumina) with highly consistent operating voltages provided in this embodiment, Figure 4b is the cyclic characteristic curve graph of the AlN-based memristor without a low thermal conductivity melting layer (traditional device), Figure 4c is the operating voltage comparison graph between an AlN-based memristor with highly consistent operating voltages and a traditional device provided in an embodiment of the present invention. Comparing Figure 4a and 4c , the I-V characteristics of the AlN-based memristor provided in this embodiment are more stable. As can be seen from Figure 4c , the operating voltages of the AlN-based memristor provided in this embodiment are more stable and concentrated. Introducing alumina as the low thermal conductivity melting layer in the AlN-based memristor can effectively increase the operating voltage of the device, thereby improving the stability of the device.
[0075] The AlN-based memristor with high operational voltage consistency provided in this embodiment inserts a low-thermal-conductivity melting layer 5 between the first AlN dielectric layer 4 and the second AlN dielectric layer 6, restricting the fracture position of the conductive filament within the low-thermal-conductivity melting layer 5. When a reverse voltage is applied to the device, only the conductive filaments within the low-thermal-conductivity melting layer 5 are fractured, and the conductive filaments within the first AlN dielectric layer 4 and the second AlN dielectric layer 6 are not affected, effectively controlling the fracture position of the conductive filaments, thereby increasing the consistency of the reset voltage and greatly enhancing the stability of the device.
[0076] The above content is a further detailed description of the present invention in combination with specific preferred embodiments, and it cannot be determined that the specific implementation of the present invention is only limited to these descriptions. For those of ordinary skill in the technical field to which the present invention pertains, without departing from the concept of the present invention, several simple deductions or substitutions can be made, which should all be regarded as belonging to the protection scope of the present invention.
Claims
1. An AlN-based memristor with high operating voltage consistency, characterized in that: include: A substrate layer (1), an adhesion layer (2), a bottom electrode layer (3), a first AlN dielectric layer (4), a low thermal conductivity fuse layer (5), a second AlN dielectric layer (6), a top electrode (7) and a protective layer (8), wherein: The substrate layer (1), the adhesion layer (2) and the bottom electrode layer (3) are arranged in sequence from bottom to top; The first AlN dielectric layer (4) is arranged on a portion of the upper surface of the bottom electrode layer (3); The low thermal conductivity fuse layer (5), the second AlN dielectric layer (6), the top electrode (7) and the protective layer (8) are arranged in sequence from bottom to top on the upper surface of the first AlN dielectric layer (4); The thermal conductivity of the low thermal conductivity fusing layer (5) is less than the thermal conductivity of AlN; When a forward voltage is applied, conductive filaments are formed inside the first AlN dielectric layer (4), the low thermal conductivity fuse layer (5) and the second AlN dielectric layer (6); When a reverse voltage is applied, the conductive filaments inside the low thermal conductivity fuse layer (5) break.
2. The AlN-based memristor with high operating voltage consistency according to claim 1, characterized in that: The material of the low thermal conductivity fuse layer (5) includes Al2O3.
3. The AlN-based memristor with high operating voltage consistency according to claim 1, characterized in that: The material of the substrate layer (1) comprises a Si / SiO2 stack.
4. The AlN-based memristor with high operating voltage consistency according to claim 1, characterized in that: The material of the adhesion layer (2) includes Ti, and the thickness is 5 to 15 nm; The material of the bottom electrode layer (3) includes Pt and has a thickness of 50 to 150 nm.
5. The AlN-based memristor with high operating voltage consistency according to claim 1, characterized in that: The thickness of the first AlN dielectric layer (4) is 3-5 nm; The thickness of the low thermal conductivity fusing layer (5) is 1 to 3 nm; The thickness of the second AlN dielectric layer (6) is 3-5 nm.
6. The AlN-based memristor with high operating voltage consistency according to claim 1, characterized in that: The material of the top electrode (7) includes Al, and the thickness is 50 to 150 nm; The material of the protective layer (8) includes Au and has a thickness of 50 to 150 nm.
7. A method for preparing an AlN-based memristor with high operating voltage consistency, characterized in that: The following steps are involved: S1: Obtain substrate layer (1); S2: preparing an adhesion layer (2) and a bottom electrode layer (3) on the upper surface of the substrate layer (1) in order from bottom to top; S3: preparing a first AlN dielectric layer (4) on a portion of the upper surface of the bottom electrode layer (3); S4: preparing a low thermal conductivity fuse layer (5) on the upper surface of the first AlN dielectric layer (4); the thermal conductivity of the low thermal conductivity fuse layer (5) is less than the thermal conductivity of AlN; S5: preparing a second AlN dielectric layer (6) on the upper surface of the low thermal conductivity fuse layer (5); S6: a top electrode (7) and a protective layer (8) are sequentially prepared on the upper surface of the second AlN dielectric layer (6) from bottom to top; when a forward voltage is applied, conductive filaments are formed inside the first AlN dielectric layer (4), the low thermal conductivity fuse layer (5) and the second AlN dielectric layer (6); when a reverse voltage is applied, the conductive filaments inside the low thermal conductivity fuse layer (5) are broken.
8. The method for preparing an AlN-based memristor with high operating voltage consistency according to claim 7, characterized in that: S4 includes the following steps: Al2O3 is grown on the upper surface of the first AlN dielectric layer (4) to form a low thermal conductivity fuse layer (5).
9. The method for preparing an AlN-based memristor with high operating voltage consistency according to claim 7, characterized in that: The specific operations of S3 are: By using an ALD process or a magnetron sputtering process, AlN is grown on a portion of the upper surface of the bottom electrode layer (3) to form a first AlN dielectric layer (4).
10. The method for preparing an AlN-based memristor with high operating voltage consistency according to claim 7, characterized in that: The specific operations of S3 are: Through the ALD process, AlN with a thickness of 3 to 5 nm is grown on a portion of the upper surface of the bottom electrode layer (3) to form a first AlN dielectric layer (4); wherein the metal precursor gas is trimethylaluminum, the flow rate of the metal precursor gas is 130 to 150 sccm, the temperature is 300 to 350°C, and the reaction gas is ammonia, and the flow rate of the reaction gas is 80 to 100 sccm.