Fixture and method for carrying out EBSD / TKD experiment by utilizing TEM sample

Abstract

The invention relates to a clamp and method for carrying out EBSD / TKD experiment by using a TEM sample, the clamp is mounted on a scanning electron microscope standard sample table base, the clamp comprises a clamp carrier and a clamp pressing sheet, the clamp carrier is provided with a pressing sheet mounting groove matched with the clamp pressing sheet, and one end of the pressing sheet mounting groove is provided with a sample mounting groove; one end of each clamp pressing piece is fixed in the corresponding pressing piece installation groove, the other end of each clamp pressing piece is provided with a through hole and abuts against the TEM sample, the number of the pressing piece installation grooves is multiple, the pressing piece installation grooves are distributed in one side of the clamp carrier in an array mode, and the conical through holes in one ends of the clamp pressing pieces are installed in part of the pressing piece installation grooves; a first mounting surface for an EBSD experiment and a second mounting surface for a TKD experiment are arranged on the sample table base. Compared with the prior art, the method can be used for preparing samples simultaneously meeting the EBSD / TKD experiment requirements in batches, two times of detection are carried out after one-time sample preparation, and the method has the advantages of being high in experiment efficiency, easy and convenient to operate, wide in application range and the like.

Description

Technical Field

[0001] The present invention relates to the technical field of electron backscatter diffraction and transmission Kikuchi diffraction, and in particular to an EBSD / TKD experimental fixture and method using a TEM sample. Background Art

[0002] The EBSD / TKD technology is an analysis method based on the excitation of a sample by an electron beam in a scanning electron microscope to form diffraction Kikuchi bands, so as to determine information such as the crystal structure, grain boundary type, phase identification, crystal orientation, texture and strain of the material. The EBSD technology collects the backscattered signal after the electron beam acts on the sample surface, while the TKD technology collects the forward scattered signal after the electron beam passes through the thin area of the sample. The spatial resolution limit of the TKD technology can reach 5-10 nm. The EBSD / TKD technology has great fundamental significance for material research and has now been widely applied to the microscopic research field of crystal materials.

[0003] At present, specific samples are often prepared by specific methods to complete EBSD / TKD detection. In addition to the preliminary mechanical cutting and polishing steps, special fine polishing steps (such as vibratory polishing, electrolytic polishing, ion thinning or pickling, etc.) are often required to meet the special requirements of the EBSD / TKD sample surface. The entire sample preparation process is relatively complicated. Especially when facing a large number of sample studies, the sample preparation workload is huge and the experimental efficiency is low. After the sample detection is completed, the sample stage bonding the sample needs to be soaked in an organic solvent (such as acetone, etc.) for a long time to dissolve before the sample can be separated. The separation time is long, which affects the experimental efficiency and is not convenient for subsequent detection.

[0004] For example, the invention with the publication number CN106935464A discloses a tool for transmission-electron backscatter diffraction and a diffraction image imaging method. By adding a transmission electron microscope sample mounting clip to the traditional sample stage and fixing its diffraction angle (70°), transmission-electron backscatter diffraction image imaging of the material is performed. A new analysis method is provided. The transmission electron microscope sample can not only be analyzed on a transmission electron microscope, but also be used on EBSD to utilize backscattered electrons. At the same time, the accurate determination of the sample stage inclination angle fixes the position of the sample, making it easier to install, enabling more electron beams to bombard the target area, reducing the influence of other parts, and at the same time, the corresponding relationship between the pattern and the material can be clearly obtained, and the actual area of the sample corresponding to the microscopic image can be clarified.

[0005] However, the above patent uses a TEM sample for t-EBSD (i.e., TKD) experiments and does not mention using a TEM sample for EBSD experiments. Although the same form of sample is used for both, the signal forms and acquisition regions collected are different, and this TEM sample cannot be simultaneously applicable to both experiments.

[0006] In summary, the existing fixtures for electron backscatter diffraction or transmission Kikuchi diffraction experiments can only hold a single sample, and the sample still requires specific processing steps. The primary processing and clamping of the sample can only be used for electron backscatter diffraction or transmission Kikuchi diffraction experiments. For mass production and experiments of a large number of samples, the sample preparation workload is huge, the experimental operation is cumbersome, and the experimental efficiency is low. Summary of the Invention

[0007] The purpose of the present invention is to overcome the defects of the existing technology that the experimental fixture can only hold a single sample, and the clamping platform is only suitable for one type of detection, the experimental operation is cumbersome, and the experimental efficiency is low, and to provide a fixture and method for EBSD / TKD experiments using TEM samples.

[0008] The purpose of the present invention can be achieved by the following technical solutions:

[0009] This solution provides a fixture for high-throughput EBSD / TKD experiments using TEM samples, which is installed on the sample stage base. The fixture includes a fixture carrier and a fixture pressing piece. The fixture carrier is provided with a pressing piece mounting groove that cooperates with the fixture pressing piece, and one end of the pressing piece mounting groove is provided with a sample mounting groove; one end of the fixture pressing piece is fixed in the pressing piece mounting groove, and the other end is provided with a through hole and abuts against the TEM sample. The number of the pressing piece mounting grooves is multiple, and each pressing piece mounting groove is arranged in an array on one side of the fixture carrier. One end of the fixture pressing piece installed in some of the pressing piece mounting grooves has a tapered through hole; the sample stage base is provided with a first mounting surface for EBSD experiments and a second mounting surface for TKD experiments.

[0010] Preferably, the TEM sample includes a circular detection area and an annular edge mounting area that are concentrically distributed from the inside to the outside. The diameter of the through hole of the fixture pressing piece is larger than the outer diameter of the circular detection area and smaller than the outer diameter of the annular edge mounting area.

[0011] Preferably, the TEM sample is prepared by electrolytic twin-jet polishing, ion thinning or focused ion beam.

[0012] Preferably, the first mounting surface and the second mounting surface are perpendicular to each other. The first mounting surface is inclined downward by 70 degrees along the horizontal plane, and the second mounting surface is inclined downward by 20 degrees along the horizontal plane.

[0013] Preferably, both the first mounting surface and the second mounting surface are provided with fastening screw holes, and the fixture carrier is provided with fastening holes that cooperate with the fastening screw holes. The fixture carrier is detachably installed on the first mounting surface or the second mounting surface by screws.

[0014] Preferably, the fixture pressing piece includes a mounting end, a bent connecting section, and a pressing head end that are connected in sequence; a threaded mounting hole is provided at one end of the pressing piece mounting groove away from the sample mounting groove, a mounting hole is provided on the mounting end, the through hole is provided on the pressing head end, the tapered through hole communicates with the threaded mounting hole, and the mounting end is connected to the fixture carrier by a screw.

[0015] Preferably, the mounting end is installed in the threaded mounting hole by a flat head fastening screw.

[0016] This solution also provides an experimental method based on the above-mentioned fixture for high-throughput EBSD / TKD experiments using TEM samples, including the following steps:

[0017] S1: Obtain a TEM sample, which includes a circular light-transmitting area, an annular reflection area, and an annular edge mounting area that are concentrically distributed from the inside to the outside. The thickness of the annular reflection area is greater than the thickness of the circular light-transmitting area and less than the thickness of the annular edge mounting area;

[0018] S2: Place the TEM sample in the sample mounting groove, install the fixture pressing piece in the pressing piece mounting groove, and press the TEM sample through the end with the through hole;

[0019] S3: Install the fixture carrier on the first mounting surface or the second mounting surface of the sample stage base;

[0020] S4: Adjust the positions of the TEM samples installed in the sample mounting grooves of the fixture carrier in sequence through a scanning electron microscope, and perform high-throughput EBSD / TKD detection in sequence;

[0021] S5: Remove the fixture carrier from the sample stage base, loosen the fixture pressing piece, take out the TEM sample, and reset the fixture pressing piece.

[0022] Further, the specific process of EBSD detection in step S4 is as follows: Install the fixture carrier on the first mounting surface, and sequentially detect the annular reflection areas of the TEM samples in all sample mounting grooves through a scanning electron microscope; the specific process of TKD detection is as follows: Install the fixture carrier on the second mounting surface, and sequentially detect the circular light-transmitting areas of the TEM samples in the pressing piece mounting grooves provided with tapered through holes through a scanning electron microscope.

[0023] Further, the TEM sample is prepared by electrolytic twin jet, ion thinning, or focused ion beam.

[0024] Compared with the prior art, the present invention has the following advantages:

[0025] (1) In this solution, a batch of TEM samples are placed into the respective sample mounting grooves on the fixture carrier, the fixture pressing piece is installed into the pressing piece mounting groove, and one end of the fixture pressing piece with a through hole is used to press against the TEM sample. The fixture carrier is fixed on the first mounting surface for EBSD experiments, or the fixture carrier is fixed on the second mounting surface for TKD experiments based on the TEM sample in the sample mounting groove with a conical through hole at the bottom.

[0026] By setting a plurality of sample mounting grooves on the fixture carrier and setting conical through holes at the bottoms of some sample mounting grooves, and cooperating with the first mounting surface and the second mounting surface on the sample stage base, EBSD experiments and TKD experiments can be carried out on a batch of TEM samples; multi-scale characterization research can be completed with one sample preparation, which can greatly improve the experimental efficiency, is simple and convenient to operate, and has a wide range of applications; the frequent installation and disassembly of individual samples are avoided, the batch detection steps are simplified, and the efficiency of batch detecting samples is improved.

[0027] (2) This solution uses electrolytic twin-jet, ion thinning or focused ion beam methods to batch prepare TEM samples, and cooperates with the fixture to fixedly clamp a large number of samples, realizing the functions of high-throughput EBSD / TKD sample preparation and characterization. At the same time, it meets the experimental requirements of OM, SEM and TEM, etc., avoids the dedicated sample preparation process for EBSD / TKD samples, realizes obtaining multiple results with one sample preparation, and meets the high-throughput characterization requirements of a large number of samples, reducing the sample preparation workload and improving the experimental efficiency. Description of the Drawings

[0028] Figure 1 It is a schematic structural diagram of the sample stage base and the fixture carrier provided by the present invention;

[0029] Figure 2 It is a schematic structural diagram of the first perspective of the fixture carrier provided by the present invention;

[0030] Figure 3 It is a schematic structural diagram of the second perspective of the fixture carrier provided by the present invention;

[0031] Figure 4 It is a schematic structural diagram of the fixture pressing piece provided by the present invention;

[0032] Figure 5 It is a schematic structural diagram of the TEM sample provided by the present invention;

[0033] Figure 6 It is the EBSD data BC and IPF maps of the zirconium alloy sample obtained after electrolytic twin-jet treatment provided by the present invention;

[0034] Figure 7 It is the TKD data BC and IPF maps of the zirconium alloy sample obtained after electrolytic twin-jet treatment provided by the present invention;

[0035] In the figure: 1. Sample stage base, 2. First mounting surface, 3. Fastening screw hole, 4. Second mounting surface, 5. Fixture carrier, 6. Fastening hole, 7. Sample mounting groove, 8. Mounting hole, 9. Fixture pressing piece, 10. Circular light-transmitting area, 11. Annular reflection area, 12. Annular edge mounting area, 91. Mounting end, 92. Bent connecting section, 93. Pressing head end. Detailed implementation mode

[0036] To make the objectives, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are some, but not all, of the embodiments of the present invention. Usually, the components of the embodiments of the present invention described and shown in the accompanying drawings here can be arranged and designed in various different configurations.

[0037] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the claimed present invention, but merely represents selected embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts fall within the scope of protection of the present invention.

[0038] It should be noted that: Similar reference numerals and letters denote similar items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings.

[0039] In the description of the present invention, it should be noted that the orientation or positional relationship indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. is based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship in which the product of the present invention is usually placed when in use. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present invention.

[0040] In addition, terms such as "horizontal" and "vertical" do not mean that the components are required to be absolutely horizontal or hanging, but can be slightly inclined. For example, "horizontal" only means that its direction is more horizontal relative to "vertical", and does not mean that the structure must be completely horizontal, but can be slightly inclined.

[0041] Embodiment

[0042] As Figures 1-3As shown in the figure, this embodiment provides a fixture for high-throughput EBSD / TKD experiments using TEM samples, which is installed on the base 1 of the standard sample stage of a scanning electron microscope. The fixture includes a fixture carrier 5 and a fixture pressing piece 9. The fixture carrier 5 is provided with a pressing piece mounting groove that cooperates with the fixture pressing piece 9, and one end of the pressing piece mounting groove is provided with a sample mounting groove 7; one end of the fixture pressing piece 9 is fixed in the pressing piece mounting groove, and the other end is provided with a through hole and abuts against the TEM sample. The number of pressing piece mounting grooves is multiple, and each pressing piece mounting groove is arranged in an array on one side of the fixture carrier 5. One end of the fixture pressing piece 9 installed in some of the pressing piece mounting grooves has a tapered through hole; the sample stage base 1 is provided with a first mounting surface 2 for EBSD experiments and a second mounting surface 4 for TKD experiments.

[0043] Place a batch of TEM samples into each sample mounting groove on the fixture carrier 5, install the fixture pressing piece 9 into the pressing piece mounting groove, and use the end of the fixture pressing piece 9 with a through hole to press against the TEM sample. Fix the fixture carrier 5 on the first mounting surface 2 to conduct EBSD experiments, or fix the fixture carrier 5 on the second mounting surface 4 to conduct TKD experiments based on the TEM samples in the sample mounting grooves with tapered through holes below.

[0044] By setting multiple sample mounting grooves on the fixture carrier 5 and setting tapered through holes at the bottom of some sample mounting grooves, and cooperating with the first mounting surface 2 and the second mounting surface 4 on the sample stage base 1, EBSD experiments and TKD experiments can be conducted on a batch of TEM samples; multi-scale characterization research can be completed with one sample preparation, which can greatly improve the experimental efficiency, is simple and convenient to operate, and has a wide range of applications; it avoids the frequent installation and disassembly of single samples, simplifies the batch detection steps, and improves the efficiency of batch detection of samples.

[0045] Preferred embodiment, as Figure 5 shown, the TEM sample includes a circular light-transmitting area 10, an annular reflection area 11, and an annular edge mounting area 12 that are concentrically distributed from the inside to the outside. The thickness of the annular reflection area 11 is greater than the thickness of the circular light-transmitting area 10 and less than the thickness of the annular edge mounting area 12.

[0046] Furthermore, the diameter of the through hole of the fixture pressing piece 9 is greater than the outer diameter of the annular reflection area 11 and less than the outer diameter of the annular edge mounting area 12. This ensures that the end of the fixture pressing piece 9 with a through hole can press the TEM sample in the sample mounting groove, and at the same time, the circular light-transmitting area 10 and the annular reflection area 11 can be detected by the scanning electron microscope through the through hole.

[0047] In this embodiment, the TEM samples are prepared by electrolytic twin jet, ion thinning, or focused ion beam.

[0048] TEM samples are prepared in batches using electro-polishing twin-jet, ion milling, or focused ion beam methods. A fixture is used to fix and clamp a large number of samples, enabling high-throughput EBSD / TKD sample preparation and characterization functions. At the same time, it meets the experimental requirements of OM, SEM, and TEM, avoiding the dedicated sample preparation process for EBSD / TKD samples, achieving multiple results from a single sample preparation, and meeting the high-throughput characterization needs of a large number of samples, reducing the sample preparation workload and improving the experimental efficiency.

[0049] In this embodiment, the first mounting surface 2 and the second mounting surface 4 are perpendicular to each other. The first mounting surface 2 is inclined downward by 70 degrees along the horizontal plane, and the second mounting surface 4 is inclined downward by 20 degrees along the horizontal plane.

[0050] Furthermore, fastening screw holes 3 are provided on both the first mounting surface 2 and the second mounting surface 4. Fastening holes 6 that cooperate with the fastening screw holes are provided on the fixture carrier 5. The fixture carrier 5 is detachably mounted on the first mounting surface 2 or the second mounting surface 4 by screws.

[0051] In this embodiment, as Figure 4 shown, the fixture pressing piece 9 includes a mounting end 91, a bent connecting section 92, and a pressing head end 93 that are connected in sequence; a threaded mounting hole is provided at one end of the pressing piece mounting groove away from the sample mounting groove. A mounting hole 8 is provided on the mounting end 91, a through hole is provided on the pressing head end 93, and a tapered through hole communicates with the threaded mounting hole. The mounting end 91 is connected to the fixture carrier 5 by screws.

[0052] Furthermore, the mounting end 91 is installed in the threaded mounting hole by a flat-head fastening screw.

[0053] Specifically, as Figures 1 to 5 shown, this embodiment provides a fixture for high-throughput EBSD / TKD experiments using TEM samples, including: a fixture carrier 5. The fixture carrier 5 includes a base with a sample slot for placing φ3mm circular TEM samples, corresponding pressing pieces and fastening screws, and fastening screws for connecting the base to the scanning electron microscope sample stage bracket.

[0054] φ3mm circular TEM samples can be prepared in batches using electro-polishing twin-jet, ion milling, or focused ion beam methods. The process of electro-polishing twin-jet or ion milling can be controlled to prepare perforated or non-perforated samples, obtaining a circular light-transmitting area 10 corresponding to EBSD detection and an annular reflection area 11 corresponding to TKD detection. The φ3nm circular TEM samples are fixed in the sample mounting slot 7 by the fixture pressing piece 9 and fastening screws.

[0055] The base is made of an alloy material with excellent electrical conductivity and is connected to the scanning electron microscope sample stage bracket by flat-head fastening screws to achieve a fixed-angle inclination. The first mounting surface 2 with a 70° inclination angle corresponds to EBSD detection; the second mounting surface 4 with a 20° inclination angle corresponds to TKD detection.

[0056] The number of sample mounting grooves 7 on the fixture carrier 5 is 9, which can simultaneously load 9 TEM samples for EBSD detection or 5 TEM samples for TKD detection (a conical through-hole is provided below the sample mounting groove 7 for TKD detection to ensure that the scattered signal is not blocked). The fixture pressing plate 9 is made of an alloy material with excellent electrical conductivity and is fixed by flat-head fastening screws, fully ensuring electrical conductivity and avoiding blocking the electron signal.

[0057] The high-throughput sample stage base 1 can meet the detection of a batch of samples in one injection, and all connections or fastenings are achieved through physical hard contact, improving the stability of the sample stage while ensuring electrical conductivity, reducing the drift of the sample stage, and at the same time avoiding the pollution and damage of the sample and the sample stage caused by using conductive glue bonding, realizing the repeated recycling of the sample, and further completing other detections.

[0058] This embodiment also provides an experimental method for a fixture using a TEM sample to perform high-throughput EBSD / TKD experiments, including the following steps:

[0059] S1: Obtain a TEM sample. The TEM sample includes a circular light-transmitting area 10, an annular reflection area 11, and an annular edge mounting area 12 that are concentrically distributed from the inside to the outside. The thickness of the annular reflection area 11 is greater than the thickness of the circular light-transmitting area 10 and less than the thickness of the annular edge mounting area 12.

[0060] S2: Place the TEM sample in the sample mounting groove, install the fixture pressing plate 9 in the pressing plate mounting groove, and press the TEM sample through the end with a through-hole.

[0061] S3: Install the fixture carrier 5 on the first mounting surface 2 or the second mounting surface 4 of the sample stage base 1.

[0062] Specifically, the TEM samples prepared in batches by electrolytic twin-jet, ion thinning, or focused ion beam methods are batch-fixed on the fixture carrier 5 through pressing plates and fastening screws, avoiding the use of conductive glue bonding to prevent pollution and damage to the transmission electron microscope samples. Then, the high-throughput sample stage loaded with samples is fixed on the scanning electron microscope sample stage bracket at an inclination (the first mounting surface with an EBSD - 70° inclination; the second mounting surface with a TKD - 20° inclination) through fastening screws to complete the installation of the TEM sample.

[0063] S4: Adjust the positions of the TEM samples installed in the sample mounting grooves of the fixture carrier 5 in sequence through a scanning electron microscope, and perform high-throughput EBSD / TKD detections in sequence.

[0064] Specifically, in the scanning electron microscope, the positions of the TEM samples batch-mounted on the fixture carrier 5 are adjusted in sequence, and high-throughput EBSD / TKD detections are performed in sequence to complete the detection.

[0065] S5: Remove the fixture carrier 5 from the sample stage base 1, loosen the fixture pressing piece 9, take out the TEM sample, and then reset the fixture pressing piece 9.

[0066] Specifically, detach the fixture carrier 5 from the sample stage base 1 of the scanning electron microscope, then sequentially loosen the fastening screws on the fixture pressing piece 9 to recover the TEM sample, and reset the fixture pressing piece 9 and the fastening screws to complete the disassembly.

[0067] In this embodiment, the specific process of EBSD detection in step S4 is as follows: Install the fixture carrier 5 on the first mounting surface 2, and sequentially detect the annular reflection regions 11 of the TEM samples in all sample mounting grooves through the scanning electron microscope; the specific process of TKD detection is as follows: Install the fixture carrier 5 on the second mounting surface 4, and sequentially detect the circular light-transmitting regions 10 of the TEM samples in the pressing piece mounting grooves provided with tapered through holes through the scanning electron microscope.

[0068] As Figure 6 and Figure 7 shown, this embodiment provides zirconium alloy samples obtained by electrolytic twin-jet treatment based on the above test method, the EBSD detection data BC, IPF maps, and the TKD detection data BC, IPF maps.

[0069] Use electrolytic twin-jet, ion thinning or focused ion beam methods to batch prepare TEM samples that meet the requirements of both EBSD / TKD detection. At the same time, design a fixture carrier to achieve the fixed clamping of a large number of samples, realize the functions of high-throughput EBSD / TKD sample preparation and characterization, meet the experimental requirements of OM, SEM, and TEM, etc., avoid the special sample preparation process for EBSD / TKD samples, and achieve multiple results from one sample preparation and meet the high-throughput characterization requirements of a large number of samples. Moreover, the present invention is applicable to the high-throughput microscopic characterization of most bulk materials. The high-throughput design of the present invention is not only reflected in the batch preparation and characterization of samples, but also reflected in the multi-scale characterization research that can be completed with one sample preparation, which can greatly improve the experimental efficiency, is simple and convenient to operate, and has a wide range of applications.

[0070] The preferred specific embodiments of the present invention have been described in detail above. It should be understood that those of ordinary skill in the art can make many modifications and variations based on the concept of the present invention without creative labor. Therefore, all technical solutions that can be obtained by those skilled in the art in the technical field of the present invention through logical analysis, reasoning, or limited experiments based on the concept of the present invention on the basis of the prior art should be within the protection scope determined by the claims.

Claims

1. A fixture for high-throughput EBSD / TKD experiments using TEM samples, mounted on a sample stage base (1), characterized in that: The fixture comprises a fixture carrier (5) and a fixture pressing plate (9); the fixture carrier (5) is provided with a pressing plate installation groove matched with the fixture pressing plate (9); one end of the pressing plate installation groove is provided with a sample installation groove (7); one end of the fixture pressing plate (9) is fixed in the pressing plate installation groove, and the other end is provided with a through hole and abuts against the TEM sample; there are multiple pressing plate installation grooves, and each pressing plate installation groove array is distributed on one side of the fixture carrier (5); one end of the fixture pressing plate (9) is installed in a conical through hole; the sample stage base (1) is provided with a first installation surface (2) for EBSD experiments and a second installation surface (4) for TKD experiments.

2. A fixture for performing high-throughput EBSD / TKD experiments using TEM samples according to claim 1, characterized in that: The TEM sample comprises a circular detection area and an annular edge installation area which are concentrically distributed from the inside to the outside, and the through hole diameter of the clamp pressing sheet (9) is larger than the outer diameter of the circular detection area and smaller than the outer diameter of the annular edge installation area.

3. A fixture for performing high-throughput EBSD / TKD experiments using TEM samples according to claim 1, characterized in that: The TEM samples are prepared by electrolytic double spray, ion thinning or focused ion beam.

4. The fixture for performing high-throughput EBSD / TKD experiments using TEM samples according to claim 1, characterized in that: The first mounting surface (2) and the second mounting surface (4) are perpendicular to each other; the first mounting surface (2) is inclined downward by 70 degrees along the horizontal plane, and the second mounting surface (4) is inclined downward by 20 degrees along the horizontal plane.

5. A fixture for performing high-throughput EBSD / TKD experiments using TEM samples according to claim 4, characterized in that: The first mounting surface (2) and the second mounting surface (4) are both provided with fastening screw holes (3), the clamp carrier (5) is provided with fastening holes (6) that match the fastening screw holes, and the clamp carrier (5) is detachably mounted on the first mounting surface (2) or the second mounting surface (4) by means of screws.

6. A fixture for performing high-throughput EBSD / TKD experiments using TEM samples according to claim 1, characterized in that: The clamp pressing piece (9) comprises a mounting end (91), a bent connecting section (92) and a pressing head end (93) which are connected in sequence; a threaded mounting hole is provided at one end of the pressing piece mounting groove away from the sample mounting groove, a mounting hole (8) is provided on the mounting end (91), the through hole is arranged on the pressing head end (93), the conical through hole is connected to the threaded mounting hole, and the mounting end (91) is connected to the clamp carrier (5) by means of screws.

7. A fixture for performing high-throughput EBSD / TKD experiments using TEM samples according to claim 6, characterized in that: The mounting end (91) is mounted in the threaded mounting hole by means of a flat-head fastening screw.

8. An experimental method for a fixture for high-throughput EBSD / TKD experiment using a TEM sample according to any one of claims 1 to 7, characterized in that: The following steps are involved: S1: obtaining a TEM sample, wherein the TEM sample comprises, from the inside to the outside, a circular light-transmitting area (10), an annular reflection area (11) and an annular edge mounting area (12) which are concentrically distributed, wherein the thickness of the annular reflection area (11) is greater than the thickness of the circular light-transmitting area (10) and less than the thickness of the annular edge mounting area (12); S2: placing the TEM sample in the sample mounting groove, installing the clamp pressing piece (9) in the pressing piece mounting groove, and pressing the TEM sample through the end with the through hole; S3: installing the fixture carrier (5) onto the first mounting surface (2) or the second mounting surface (4) of the sample stage base (1); S4: adjusting the positions of the TEM samples installed in the sample mounting grooves of the fixture carrier (5) in sequence by scanning electron microscopy, and performing high-throughput EBSD / TKD detection in sequence; S5: Remove the fixture carrier (5) from the sample stage base (1), loosen the fixture pressing plate (9), take out the TEM sample, and reset the fixture pressing plate (9).

9. The detection method according to claim 8, characterized in that: The specific process of EBSD detection in step S4 is: installing the fixture carrier (5) on the first mounting surface (2), and sequentially detecting the annular reflection area (11) of the TEM samples in all sample mounting grooves by scanning electron microscopy; the specific process of TKD detection is: installing the fixture carrier (5) on the second mounting surface (4), and sequentially detecting the circular light transmission area (10) of the TEM samples in the pressing plate mounting groove with a conical through hole by scanning electron microscopy.

10. The detection method according to claim 8, characterized in that: The TEM samples are prepared by electrolytic double spray, ion thinning or focused ion beam.

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