Method and device for determining position of thin-layer low-resistance body beside well

Abstract

The invention provides a method and a device for determining the position of a near-well lamellar low-resistance body, which are used for determining the position parameters of the near-well lamellar low-resistance body by establishing an orthogonal coil system to measure the distribution of an electromagnetic field in a well. The method comprises the following steps: collecting first apparent conductivity of all depths and all preset directions; according to the first apparent conductivity, determining the depth of the thin-layer-shaped low-resistance body beside the well; based on the first apparent conductivity, obtaining the orientation of the thin-layer-shaped low-resistance body beside the well; when the thin-layer-shaped low-resistance body is located in the 0-degree direction and the intersection point of the thin-layer-shaped low-resistance body and the well axis is located in the middle point of the receiving and transmitting coil, second apparent conductivity, measured by all the receiving coils, in all the preset directions is obtained; based on the second apparent conductivity data, obtaining an inclination angle of the well-side lamellar low-resistance body; according to the position relation between the instrument coordinate system and the stratum coordinate system, the position of the well-side thin-layer-shaped low-resistance body in the stratum coordinate system is determined based on the depth of the well-side thin-layer-shaped low-resistance body, the orientation of the well-side thin-layer-shaped low-resistance body and the dip angle of the well-side thin-layer-shaped low-resistance body.

Description

Technical Field

[0001] The present invention relates to the technical field of wellside structural geophysical logging characterization, and particularly to a method and device for determining the position of a wellside thin-layered low-resistivity body. Background Art

[0002] Wellside thin-layered low-resistivity bodies such as small-scale fractures, large-scale faults, and shale bands are of great significance to the exploration and development of tight oil and gas reservoirs. Among them, fractures and faults are important reservoir spaces and migration channels for tight oil and gas reservoirs, and contribute greatly to the single-well production; shale bands affect the extension of hydraulic fractures in the formation and are one of the important considerations in hydraulic fracturing construction design.

[0003] In order to accurately describe the extension of fractures, faults, and shale bands in the formation, determine the perforation horizons, in-situ stress distribution, and optimize the pressure construction design scheme, it is necessary to accurately characterize the position parameters of the wellside thin-layered low-resistivity bodies. Existing wellside thin-layered low-resistivity body position parameter logging characterization methods include borehole wall electrical imaging logging characterization method and electrical logging instrument characterization method with centered measurement. The electrical imaging logging detection method has a shallow detection depth and can only characterize the distribution of fractures and shale bands on the borehole wall, and it is difficult to characterize their extension when they are far from the wellbore; conventional centered electrical logging instruments such as dual induction and array induction are coaxial coil systems, which can only measure the ZZ component of the magnetic field and do not have azimuth sensitivity, and cannot characterize the position parameters of the wellside thin-layered low-resistivity bodies. Summary of the Invention

[0004] The present invention provides a method and device for determining the position of a wellside thin-layered low-resistivity body, which measures the electromagnetic field distribution in the well through an orthogonal coil system, and then determines the position parameters of the wellside thin-layered low-resistivity body.

[0005] In a first aspect, the present invention provides a method for determining the position of a wellside thin-layered low-resistivity body, the method is implemented based on a coil system structure, and the coil system structure includes a transmitting coil and a receiving coil; the method includes:

[0006] Collect the first apparent conductivity at all depths and all preset directions;

[0007] Determine the depth of the wellside thin-layered low-resistivity body according to the first apparent conductivity;

[0008] Obtain the azimuth of the wellside thin-layered low-resistivity body based on the first apparent conductivity;

[0009] Rotate the wellside thin-layered low-resistivity body to the 0° azimuth, and obtain the second apparent conductivity at all preset directions measured by the receiving coil when the thin-layered low-resistivity body is at the 0° azimuth and the intersection of the thin-layered low-resistivity body and the well axis is at the midpoint of the transceiver coil system;

[0010] Obtain the dip angle of the wellside thin-layered low-resistivity body based on the second apparent conductivity data.

[0011] Based on the positional relationship between the instrument coordinate system and the formation coordinate system, determine the position of the thin-layered low-resistivity body beside the well in the formation coordinate system based on the depth, azimuth, and dip angle of the thin-layered low-resistivity body beside the well.

[0012] In one embodiment, all the preset directions include nine directions; collecting the first apparent conductivity in all the preset directions includes: measuring the magnetic field components in nine directions and converting the magnetic field components into the first apparent conductivity.

[0013] In one embodiment, the determining the depth of the thin-layered low-resistivity body beside the well according to the first apparent conductivity includes:

[0014] Extract the first apparent conductivity in the same-named directions from all the first apparent conductivities, and determine the central position of the anomaly of the first apparent conductivity curve in the same-named directions caused by the thin-layered low-resistivity body; the first apparent conductivity in the same-named directions is the first apparent conductivity when the transmitting coil and the receiving coil are in the same direction;

[0015] Based on the symmetry of the anomaly of the first apparent conductivity curve in the same-named directions caused by the thin-layered low-resistivity body in the depth direction, determine the depth of the thin-layered low-resistivity body beside the well according to the central position of the anomaly of the first apparent conductivity curve in the same-named directions.

[0016] In one embodiment, obtaining the azimuth of the thin-layered low-resistivity body beside the well based on the first apparent conductivity includes: based on the first apparent conductivity, combining the preliminary azimuth angle expression of the low-resistivity body and the sign of the first apparent conductivity, determine the azimuth of the thin-layered low-resistivity body beside the well.

[0017] In one embodiment, the specific expression of the preliminary azimuth angle of the low-resistivity body is:

[0018]

[0019] Wherein, is the preliminary azimuth angle of the low-resistivity body, σ' yz is the first apparent conductivity when the coil in the Y direction transmits and the coil in the Z direction receives, σ' xz is the first apparent conductivity when the coil in the X direction transmits and the coil in the Z direction receives.

[0020] In one embodiment, the formula for obtaining the dip angle of the thin-layered low-resistivity body beside the well based on the second apparent conductivity data is:

[0021]

[0022] Wherein, the angle θ is the dip angle of the thin-layered low-resistivity body beside the well, σ xzThe second apparent conductivity for X - direction coil transmitting and Z - direction coil receiving, σ xx The second apparent conductivity for X - direction coil transmitting and X - direction coil receiving; σ zz The second apparent conductivity for Z - direction coil transmitting and Z - direction coil receiving.

[0023] In a second aspect, the present invention provides a device for determining the position of a thin - layer low - resistivity body beside a well, comprising:

[0024] An acquisition module, configured to acquire the first apparent conductivity in all preset directions;

[0025] A depth determination module, configured to determine the depth of the thin - layer low - resistivity body beside the well according to the first apparent conductivity;

[0026] An azimuth determination module, configured to obtain the azimuth of the thin - layer low - resistivity body beside the well based on the first apparent conductivity;

[0027] A homing module, which rotates the thin - layer low - resistivity body beside the well to the 0° azimuth, and acquires the second apparent conductivity in all preset directions measured by the receiving coil when the thin - layer low - resistivity body is at the 0° azimuth and the intersection point of the thin - layer low - resistivity body and the well axis is at the mid - point of the transceiver coil system;

[0028] An inclination determination module, which obtains the inclination of the thin - layer low - resistivity body beside the well based on the second apparent conductivity data;

[0029] A position parameter determination module, which determines the position of the thin - layer low - resistivity body beside the well in the formation coordinate system according to the position relationship between the instrument coordinate system and the formation coordinate system, based on the depth, the azimuth and the inclination of the thin - layer low - resistivity body beside the well.

[0030] In one embodiment, the acquisition module includes: an orthogonal coil system structure, disposed in the well and used for measuring the magnetic field components in the well; the coil system structure includes three transmitting coils and three receiving coils; wherein, the three transmitting coils are respectively disposed in the X - direction, Y - direction and Z - direction of the instrument coordinate system; the three receiving coils are respectively disposed in the X - direction, Y - direction and Z - direction of the instrument coordinate system.

[0031] In a third aspect, the present application provides an electronic device, comprising a processor and a memory, where the memory stores computer - readable instructions, and when the computer - readable instructions are executed by the processor, the steps in the method provided in the first aspect as described above are run.

[0032] In a fourth aspect, the present application provides a storage medium, on which a computer program is stored, and when the computer program is executed by a processor, the steps in the method provided in the first aspect as described above are run.

[0033] As can be seen from the above technical solutions, the present invention has the following advantages:

[0034] The present invention provides a method and device for determining the position parameters of a thin-layered low-resistivity body beside a well. The method includes: collecting the first apparent conductivity in all preset directions; determining the depth of the thin-layered low-resistivity body beside the well according to the first apparent conductivity; obtaining the azimuth of the thin-layered low-resistivity body beside the well based on the first apparent conductivity; rotating the thin-layered low-resistivity body beside the well to the 0° azimuth, and obtaining the second apparent conductivity in all preset directions of the thin-layered low-resistivity body at the 0° azimuth; obtaining the dip angle of the thin-layered low-resistivity body beside the well based on the second apparent conductivity data; and determining the position of the thin-layered low-resistivity body beside the well in the formation coordinate system based on the position relationship between the instrument coordinate system and the formation coordinate system, the depth of the thin-layered low-resistivity body beside the well, the azimuth of the thin-layered low-resistivity body beside the well, and the dip angle of the thin-layered low-resistivity body beside the well. It can be applied to the evaluation of the spatial distribution state of natural fractures, cracks, artificial hydraulic fractures and shale bands beside the well. By establishing a method for measuring the electromagnetic field distribution in the well using an orthogonal coil array to determine the depth, dip angle and azimuth parameters of the thin-layered low-resistivity body, it provides a basis for the optimization of perforation horizons, the design of hydraulic fracturing construction plans and the evaluation of in-situ stress during the exploration and development of oil and gas reservoirs. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the following drawings are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0036] Figure 1 FIG. is a schematic structural diagram of a transmitting coil provided by an embodiment of the present invention.

[0037] Figure 2 FIG. is a schematic structural diagram of a receiving coil provided by an embodiment of the present invention.

[0038] Figure 3 FIG. is a parameter diagram of the positional relationship between a thin-layered low-resistivity body, a wellbore and an instrument provided by an embodiment of the present invention.

[0039] Figure 4 FIG. is a flowchart of the steps for a method for determining the position of a thin-layered low-resistivity body beside a well provided by an embodiment of the present invention.

[0040] Figure 5 FIG. is a first apparent conductivity curve diagram of a thin-layered low-resistivity body provided by an embodiment of the present invention.

[0041] Figure 6A relationship diagram between the actual azimuth angle and the preliminary azimuth angle of a thin-layered low-resistivity body provided by an embodiment of the present invention.

[0042] Figure 7 A structural block diagram of a device for determining the position parameters of a thin-layered low-resistivity body beside a well provided by an embodiment of the present invention. Detailed implementation manners

[0043] An embodiment of the present invention provides a method and a device for determining the position parameters of a thin-layered low-resistivity body beside a well. By using an orthogonal coil array to measure the electromagnetic field distribution in the well, the position parameters of the thin-layered low-resistivity body beside the well are further determined.

[0044] To make the objectives, features, and advantages of the present invention more obvious and understandable, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the embodiments described below are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0045] Example 1

[0046] A method for determining the position of a thin-layered low-resistivity body beside a well provided by the present invention is implemented based on an orthogonal coil array. The orthogonal coil array includes a transmitting coil and a receiving coil. A method for exciting with the transmitting coil and measuring the electromagnetic field in the well with the receiving coil to determine the position of the thin-layered low-resistivity body beside the well. The thin-layered low-resistivity body beside the well may include, but is not limited to, fractures, shale thin layers, etc.

[0047] Refer to Figure 1 and Figure 2 As shown, Tx is the transmitting coil in the X direction, Ty is the transmitting coil in the Y direction, and Tz is the transmitting coil in the Z direction; Rx is the receiving coil in the X direction, Ry is the receiving coil in the Y direction, and Rz is the receiving coil in the Z direction.

[0048] Among them, the signal definitions are as follows:

[0049] XX: The Tx coil transmits and the Rx coil receives to measure the apparent conductivity in the XX direction;

[0050] XY: The Tx coil transmits and the Ry coil receives to measure the apparent conductivity in the XY direction;

[0051] XZ: The Tx coil transmits and the Rz coil receives to measure the apparent conductivity in the XZ direction;

[0052] YX: The Ty coil transmits and the Rx coil receives to measure the apparent conductivity in the YX direction;

[0053] YY: The Ty coil emits, and the Ry coil receives to measure the apparent conductivity in the YY direction;

[0054] YZ: The Ty coil emits, and the Rz coil receives to measure the apparent conductivity in the YZ direction;

[0055] ZX: The Tz coil emits, and the Rx coil receives to measure the apparent conductivity in the ZX direction;

[0056] ZY: The Tz coil emits, and the Ry coil receives to measure the apparent conductivity in the ZY direction;

[0057] ZZ: The Tz coil emits, and the Rz coil receives to measure the apparent conductivity in the ZZ direction.

[0058] Among them, the position of the thin-layered low-resistivity body beside the well can be characterized by three parameters: depth, azimuth, and dip angle. For details, please refer to Figure 3 As shown, the depth of the thin-layered low-resistivity body is the depth of the intersection point of the thin-layered low-resistivity body and the well axis; the angle θ is the dip angle of the thin-layered low-resistivity body beside the well; the angle is the azimuth of the thin-layered low-resistivity body beside the well.

[0059] Example 2

[0060] This embodiment provides a method for determining the position of a thin-layered low-resistivity body beside a well, where the thin-layered low-resistivity body beside the well includes but is not limited to fractures, shale streaks, etc. Please refer to Figure 4 The method for determining the position of the thin-layered low-resistivity body beside the well includes:

[0061] Step 01: Collect the first apparent conductivity at all depths and in all preset directions.

[0062] As described in Reference Example 1, all preset directions include nine directions. Among them, collecting the first apparent conductivity in all preset directions includes: measuring the magnetic field components in nine directions and converting the magnetic field components into the first apparent conductivity.

[0063] The first apparent conductivity is determined based on the instrument coordinate system to which the coil system structure belongs. Among them, the coil system structure and the corresponding acquisition and definition model of the first apparent conductivity are:

[0064] Refer to Figure 1 and Figure 2 As shown, Tx is the transmitting coil in the X direction, Ty is the transmitting coil in the Y direction, and Tz is the transmitting coil in the Z direction; Rx is the receiving coil in the X direction, Ry is the receiving coil in the Y direction, and Rz is the receiving coil in the Z direction.

[0065] Among them, the signal definition:

[0066] XX: The Tx coil emits, and the Rx coil receives to measure the apparent conductivity in the XX direction;

[0067] XY: The Tx coil emits and the Ry coil receives to measure the apparent conductivity in the XY direction;

[0068] XZ: The Tx coil emits and the Rz coil receives to measure the apparent conductivity in the XZ direction;

[0069] YX: The Ty coil emits and the Rx coil receives to measure the apparent conductivity in the YX direction;

[0070] YY: The Ty coil emits and the Ry coil receives to measure the apparent conductivity in the YY direction;

[0071] YZ: The Ty coil emits and the Rz coil receives to measure the apparent conductivity in the YZ direction;

[0072] ZX: The Tz coil emits and the Rx coil receives to measure the apparent conductivity in the ZX direction;

[0073] ZY: The Tz coil emits and the Ry coil receives to measure the apparent conductivity in the ZY direction;

[0074] ZZ: The Tz coil emits and the Rz coil receives to measure the apparent conductivity in the ZZ direction.

[0075] Step 02: Determine the depth of the thin-layered low-resistivity body near the well according to the first apparent conductivity.

[0076] The coil system structure includes a transmitting coil and a receiving coil; wherein, determining the depth of the thin-layered low-resistivity body near the well according to the first apparent conductivity includes:

[0077] Step 021: Extract the first apparent conductivity in the same-named direction from all the first apparent conductivities, and determine the central position of the anomaly of the first apparent conductivity curve in the same-named direction caused by the thin-layered low-resistivity body; the first apparent conductivity in the same-named direction is the first apparent conductivity with the same direction of the transmitting coil and the receiving coil;

[0078] Step 022: Based on the symmetry of the anomaly of the first apparent conductivity curve in the same-named direction caused by the thin-layered low-resistivity body in the depth direction, determine the depth of the thin-layered low-resistivity body near the well according to the central position of the anomaly of the first apparent conductivity curve in the same-named direction.

[0079] Among them, the same-named directions include the XX direction, the YY direction, and the ZZ direction. Since the apparent conductivity curves in the same-named directions are symmetric about the depth of the intersection of the thin-layered low-resistivity body and the well axis (i.e., the depth of the thin-layered low-resistivity body) in the direction of change along the wellbore depth, the depth of the thin-layered low-resistivity body near the well can be directly determined from the central position of the anomaly of the apparent conductivity curve in the same-named direction.

[0080] Illustrated by way of example, refer to Figure 5As shown Figure 5 This is the first apparent conductivity curve of a thin-layered low-resistivity body. XX is the same-named component, the abscissa is the depth, and the ordinate is the conductivity. Then the XX conductivity curve is symmetric about the point X = 0m in the depth direction (change of abscissa), and this point of 0m is the intersection of the thin-layered low-resistivity body and the well axis.

[0081] Step 03: Determine the orientation of the thin-layered low-resistivity body beside the well based on the first apparent conductivity.

[0082] Furthermore, determining the orientation of the thin-layered low-resistivity body beside the well based on the first apparent conductivity includes: based on the first apparent conductivity, combining the preliminary orientation angle expression of the low-resistivity body and the sign of the first apparent conductivity to determine the orientation of the thin-layered low-resistivity body beside the well.

[0083] Specifically, calculate the preliminary orientation angle of the low-resistivity body The formula (I) is:

[0084]

[0085] Wherein, is the preliminary orientation angle of the low-resistivity body, σ' yz is the first apparent conductivity of the Y-direction coil transmitting and the Z-direction coil receiving, σ' xz is the first apparent conductivity of the X-direction coil transmitting and the Z-direction coil receiving.

[0086] Limited by the range of the arctangent function, there are two corresponding preliminary orientations of the thin-layered low-resistivity body obtained by calculation, which are the actual orientations of the thin-layered low-resistivity body in the ranges of 0° - 180° and 180° - 360° respectively, and the two differ by 180°, as Figure 6 shown. However, when the low-resistivity thin layer is in the 0° - 180° orientation, the first apparent conductivity in the ZY direction is greater than 0; when the low-resistivity thin layer is in the 180° - 360° orientation, the first apparent conductivity in the ZY direction is less than 0. Therefore, it is necessary to use the sign of the first apparent conductivity in the ZY direction to determine the actual orientation range of the reservoir low-resistivity thin layer, and then combine the preliminary orientation calculated for the low-resistivity thin layer to establish a one-to-one correspondence between the preliminary calculated orientation of the low-resistivity thin layer and the actual orientation of the low-resistivity body of.

[0087] Specifically, first calculate a preliminary azimuth of the low-resistivity thin layer using formula (1). However, the calculated preliminary azimuth of the low-resistivity thin layer does not correspond one-to-one with the actual azimuth. Instead, one calculated azimuth corresponds to two actual azimuths, which are respectively in the ranges of 0 - 180° and 180° - 360°, and the difference between the two azimuths is 180°. At this time, it is necessary to determine whether the actual azimuth of the true low-resistivity thin layer is in the range of 0 - 180° or 180° - 360° according to the sign of the first apparent conductivity in the ZY direction. After determination, a one-to-one correspondence relationship is formed between the preliminary azimuth and the actual azimuth. It should be noted that the preliminary azimuth is not equal to the actual azimuth, but only there is a one-to-one correspondence between the two, and it is also necessary to Figure 6 perform conversion according to the relationship shown to finally determine the azimuth of the thin-layered low-resistivity body beside the well.

[0088] Step 04: Rotate the thin-layered low-resistivity body beside the well to the 0° azimuth, and obtain the second apparent conductivity in all preset directions when the thin-layered low-resistivity body is at the 0° azimuth and the intersection point of the thin-layered low-resistivity body and the well axis is at the midpoint of the transmitting and receiving coils.

[0089] Here, transform the first conductivity data in nine directions to obtain the second apparent conductivity data in nine directions when the thin-layered low-resistivity body beside the well is at the 0° azimuth.

[0090] The specific transformation method is as follows. Assume that the actual azimuth of the thin-layered low-resistivity body beside the well obtained in step 03 is Rotate the first conductivity data by the azimuth to obtain the second apparent conductivity in nine directions when the thin-layered low-resistivity body beside the well is at the 0° azimuth.

[0091] Step 05: Obtain the dip angle of the thin-layered low-resistivity body beside the well based on the second apparent conductivity data.

[0092] Numerical calculations show that the dip angle of the thin-layered low-resistivity body beside the well is related to the apparent conductivity in the XZ, XX, and ZZ directions. Using the second apparent conductivity in the XZ, XX, and ZZ directions after homing in step 04, calculate the dip angle of the thin-layered low-resistivity body beside the well through the following formula (2):

[0093]

[0094] where the angle θ is the dip angle of the thin-layered low-resistivity body beside the well, and σ xz is the second apparent conductivity of the coil transmitting in the X direction and receiving in the Z direction, and σ xx is the second apparent conductivity of the coil transmitting in the X direction and receiving in the X direction; σ zz is the second apparent conductivity of the coil transmitting in the Z direction and receiving in the Z direction.

[0095] Step 06: Determine the position of the thin-layered low-resistivity body beside the well based on the depth, azimuth, and dip angle of the thin-layered low-resistivity body beside the well and the positional relationship between the instrument coordinate system and the formation coordinate system.

[0096] In Steps 03 and 05, the azimuth and dip angle of the thin-layered low-resistivity body beside the well are the azimuth and dip angle of the thin-layered low-resistivity body beside the well relative to the X direction of the instrument. After obtaining the azimuth and dip angle of the thin-layered low-resistivity body beside the well relative to the X direction of the instrument, it is necessary to obtain the true azimuth and true dip angle of the thin-layered low-resistivity body beside the well in the formation coordinate system according to the positional relationship between the instrument coordinate system and the formation coordinate system recorded by the instrument, so as to obtain the actual depth, azimuth, and dip angle of the thin-layered low-resistivity body beside the well, and then determine the position of the thin-layered low-resistivity body beside the well.

[0097] Optionally, the conversion methods of the dip angle and azimuth of the thin-layered low-resistivity body beside the well in different coordinate systems include, but are not limited to, the Euler angle method, the quaternion method, etc.

[0098] In an embodiment of the present invention, since two thin-layered low-resistivity bodies beside the well with an azimuth difference of 180° and opposite dip angle signs are actually the same low-resistivity body (for example, the thin-layered low-resistivity body with an azimuth of 90° and a dip angle of 60° and the low-resistivity body with an azimuth of 270° and a dip angle of -60° are the same low-resistivity body), therefore, in the present invention, it is assumed that the dip angle of all thin-layered low-resistivity bodies beside the well is greater than 0, so as to avoid the problem of multiple solutions in the process of determining the position parameters of the thin-layered low-resistivity body.

[0099] This embodiment provides a method and device for determining the position parameters of a thin-layered low-resistivity body beside the well. The method includes: collecting the first apparent conductivity in all preset directions; determining the depth of the thin-layered low-resistivity body beside the well according to the first apparent conductivity; obtaining the azimuth of the thin-layered low-resistivity body beside the well based on the first apparent conductivity; rotating the thin-layered low-resistivity body beside the well to the 0° azimuth and obtaining the second apparent conductivity in all preset directions of the thin-layered low-resistivity body at the 0° azimuth; obtaining the dip angle of the thin-layered low-resistivity body beside the well based on the second apparent conductivity data; and determining the position of the thin-layered low-resistivity body beside the well in the formation coordinate system based on the depth, azimuth, and dip angle of the thin-layered low-resistivity body beside the well and the positional relationship between the instrument coordinate system and the formation coordinate system. It can be applied to the evaluation of the spatial distribution state of natural fractures, artificial hydraulic fractures, and shale streaks beside the well. By establishing a method for measuring the electromagnetic field distribution in the well using an orthogonal coil system to determine the depth, dip angle, and azimuth parameters of the thin-layered low-resistivity body, it provides a basis for the optimization of perforation horizons, the design of hydraulic fracturing construction plans, and the evaluation of in-situ stress during the exploration and development of oil and gas reservoirs.

[0100] Example 3

[0101] This embodiment provides a method for determining the position of a thin-layered low-resistivity body beside a well, and the specific implementation process is as follows:

[0102] This method is implemented based on an orthogonal coil system. The orthogonal coil system includes a transmitting coil and a receiving coil. The method uses the transmitting coil to excite and the receiving coil to measure the electromagnetic field in the well, and then determines the position of the thin-layered low-resistivity body beside the well. Both the transmitting coil and the receiving coil are part of the orthogonal coil system, with a coil spacing of 1.6 m. Measurements are taken in a vertical well (the Z-axis of the instrument is the same as the Z-axis of the formation coordinate system), and the X-direction of the instrument coordinate system is 30° east of north in the formation coordinate system. The first apparent conductivities in the XX, XY, XZ, YX, YY, YZ, ZX, ZY, and ZZ directions at this point are -0.02759 S / m; -0.002071 S / m; -0.01997 S / m; -0.002070 S / m; 0.02519 S / m; 0.034987 S / m; -0.02003 S / m; 0.03502 S / m; 0.03937 S / m respectively. The depth of the thin-layered low-resistivity body beside the well can be determined as 2910 m from the abnormal center point of the curve of the first apparent conductivity in the ZZ direction along the wellbore depth direction (Z-direction). The azimuth of the thin-layered low-resistivity body in the instrument coordinate system can be determined as 60.3° according to step 03 in the above embodiment. Referring to step 04 in the above embodiment, the first apparent conductivity is rotated to align the low-resistivity body to the 0° azimuth. At this time, the second apparent conductivities in the XX, XZ, and ZZ directions are -0.02400 S / m; -0.04028 S / m; 0.03935 S / m respectively. The dip angle of the thin-layered low-resistivity body in the instrument coordinate system is calculated as 32.4° according to step 05 in the above embodiment. Finally, based on the relationship between the instrument coordinate system and the formation coordinate system, the depth of the low-resistivity body is determined to be 2910 m, the dip angle is 32.4°, and the azimuth is 90.3° east of north.

[0103] Example 4

[0104] This embodiment provides a device 100 for determining the position of a thin-layered low-resistivity body beside a well. Referring to Figure 7 as shown, the device 100 for determining the position parameters of the thin-layered low-resistivity body beside the well includes: an acquisition module 10, a depth determination module 20, an azimuth determination module 30, a homing module 40, a dip angle determination module 50, and a position parameter determination module 60. Among them,

[0105] The acquisition module 10 is used to acquire the first apparent conductivities at all depths and in all preset directions;

[0106] The depth determination module 20 is used to determine the depth of the thin-layered low-resistivity body beside the well according to the first apparent conductivity;

[0107] The azimuth determination module 30 is used to obtain the azimuth of the thin-layered low-resistivity body based on the first apparent conductivity;

[0108] The homing module 40 rotates the near-wellbore thin-layered low-resistivity body to the 0° azimuth, and obtains the second apparent conductivity in all preset directions measured by the receiving coil when the thin-layered low-resistivity body is at the 0° azimuth and the intersection point of the thin-layered low-resistivity body and the well axis is at the midpoint of the transmitting and receiving coil arrays;

[0109] The dip angle determination module 50 obtains the dip angle of the near-wellbore thin-layered low-resistivity body based on the second apparent conductivity data;

[0110] The position parameter determination module 60 determines the position of the near-wellbore thin-layered low-resistivity body in the formation coordinate system based on the depth, azimuth, and dip angle of the near-wellbore thin-layered low-resistivity body according to the position relationship between the instrument coordinate system and the formation coordinate system.

[0111] Further, the all preset directions include nine directions; the acquisition module 10 is used to measure the magnetic field components in nine directions and convert the magnetic field components into the first apparent conductivity.

[0112] Further, the coil array structure includes a transmitting coil and a receiving coil; the depth determination module 20 is used to extract the first apparent conductivity in the same name direction from all the first apparent conductivities, and determine the central position where the first apparent conductivity curve in the same name direction is abnormal caused by the thin-layered low-resistivity body; the first apparent conductivity in the same name direction is the first apparent conductivity when the directions of the transmitting coil and the receiving coil are the same; based on the symmetry of the first apparent conductivity curve in the same name direction abnormal caused by the thin-layered low-resistivity body in the depth direction, according to the central position of the first apparent conductivity curve in the same name direction abnormal, determine the depth of the near-wellbore thin-layered low-resistivity body.

[0113] Further, the azimuth determination module 30 is used to determine the azimuth of the near-wellbore thin-layered low-resistivity body based on the first apparent conductivity, in combination with the preliminary azimuth angle expression of the low-resistivity body and the sign of the first apparent conductivity.

[0114] Further, the position parameter determination module 60 is used to obtain the true azimuth and true dip angle of the near-wellbore thin-layered low-resistivity body after obtaining the azimuth and dip angle of the near-wellbore thin-layered low-resistivity body relative to the instrument X direction, and according to the position relationship between the instrument coordinate system and the formation coordinate system recorded by the instrument, the actual depth, azimuth, and dip angle of the near-wellbore thin-layered low-resistivity body in the formation can be obtained, and then the position of the near-wellbore thin-layered low-resistivity body can be determined.

[0115] The device for determining the position of thin-layered low-resistivity bodies beside a well provided in this embodiment solves the problem of evaluating the position parameters of low-resistivity layered structures such as fractures, faults, and shale bands beside a well, and is an effective supplement to the existing methods for evaluating the scale parameters of subsurface structures beside a well. The position parameters of the low-resistivity structures beside the well evaluated can provide effective support for the design of fracturing construction plans, the optimization of perforation intervals, and the evaluation of in-situ stress parameters.

[0116] Example 5

[0117] This embodiment provides an electronic device, which can be a mobile phone, a computer, a tablet computer, etc., including a memory and a processor. A computer program is stored on the memory, and when the computer program is executed by the processor, it implements the method for determining the position of thin-layered low-resistivity bodies beside a well as described in Embodiment 1. It can be understood that the electronic device may further include an input / output (I / O) interface and a communication component.

[0118] Among them, the processor is used to execute all or part of the steps in the method for determining the position of thin-layered low-resistivity bodies beside a well in Embodiment 1.

[0119] The memory is used to store various types of data, which may include, for example, instructions for any application program or method in the electronic device, as well as data related to the application program.

[0120] The processor can be implemented by an application specific integrated circuit (ASIC), a digital signal processor (DSP), a programmable logic device (PLD), a field programmable gate array (FPGA), a controller, a microcontroller, a microprocessor, or other electronic components, and is used to execute the method for determining the position of thin-layered low-resistivity bodies beside a well in Embodiment 1 above.

[0121] The memory can be implemented by any type of volatile or non-volatile storage device or a combination thereof, such as static random access memory (SRAM), electrically erasable programmable read-only memory (EEPROM), erasable programmable read-only memory (EPROM), programmable read-only memory (PROM), read-only memory (ROM), magnetic memory, flash memory, magnetic disk or optical disk.

[0122] Example 6

[0123] This embodiment also provides a computer-readable storage medium. In each embodiment of the present invention, each functional unit can be integrated in a processing unit, or each unit can exist physically alone, or two or more units can be integrated in one unit. If the function is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium.

[0124] Based on such an understanding, the technical solution of the present invention, in essence, or the part that contributes to the prior art or a part of this technical solution can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions for causing a computer device (which can be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the methods described in each embodiment of the present invention.

[0125] The foregoing storage medium includes: flash memory, hard disk, multimedia card, card-type memory (such as SD or DX memory, etc.), random access memory (RAM), static random access memory (SRAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), programmable read-only memory (PROM), magnetic memory, magnetic disk, optical disk, server, APP application mall, and other various media that can store program verification codes. A computer program is stored thereon, and when the computer program is executed by a processor, the following method steps can be implemented:

[0126] Step 01: Collect the first apparent conductivity in all preset directions.

[0127] As described in the first reference embodiment, all preset directions include nine directions. Among them, collecting the first apparent conductivity in all preset directions includes: measuring the magnetic field components in nine directions and converting the magnetic field components into the first apparent conductivity.

[0128] The first apparent conductivity is determined based on the instrument coordinate system to which the coil array structure belongs. Among them, the coil array structure and the acquisition and definition model of the corresponding first apparent conductivity are:

[0129] Reference Figure 1 and Figure 2 As shown, Tx is the transmitting coil in the X direction, Ty is the transmitting coil in the Y direction, and Tz is the transmitting coil in the Z direction; Rx is the receiving coil in the X direction, Ry is the receiving coil in the Y direction, and Rz is the receiving coil in the Z direction.

[0130] Among them, the signal definitions are:

[0131] XX: The Tx coil transmits and the Rx coil receives to measure the apparent conductivity in the XX direction;

[0132] XY: The Tx coil transmits and the Ry coil receives to measure the apparent conductivity in the XY direction;

[0133] XZ: The Tx coil transmits and the Rz coil receives to measure the apparent conductivity in the XZ direction;

[0134] YX: The Ty coil transmits and the Rx coil receives to measure the apparent conductivity in the YX direction;

[0135] YY: The Ty coil transmits and the Ry coil receives to measure the apparent conductivity in the YY direction;

[0136] YZ: The Ty coil transmits and the Rz coil receives to measure the apparent conductivity in the YZ direction;

[0137] ZX: The Tz coil transmits and the Rx coil receives to measure the apparent conductivity in the ZX direction;

[0138] ZY: The Tz coil transmits and the Ry coil receives to measure the apparent conductivity in the ZY direction;

[0139] ZZ: The Tz coil transmits and the Rz coil receives to measure the apparent conductivity in the ZZ direction.

[0140] Step 02: Determine the depth of the thin-layered low-resistivity body beside the well according to the first apparent conductivity.

[0141] The coil array structure includes a transmitting coil and a receiving coil; among them, determining the depth of the thin-layered low-resistivity body beside the well according to the first apparent conductivity includes:

[0142] Step 021: Extract the first apparent conductivities in the same-named directions from all the first apparent conductivities, and determine the central position of the anomaly of the first apparent conductivity curve in the same-named directions caused by the thin-layered low-resistivity body; the first apparent conductivity in the same-named directions is the first apparent conductivity when the directions of the transmitting coil and the receiving coil are the same.

[0143] Step 022: Based on the symmetry of the anomaly of the first apparent conductivity curve in the same-named directions caused by the thin-layered low-resistivity body in the depth direction, determine the depth of the thin-layered low-resistivity body beside the well according to the central position of the anomaly of the first apparent conductivity curve in the same-named directions.

[0144] Among them, the same-named directions include the XX direction, the YY direction, and the ZZ direction. Since the apparent conductivity curves in the same-named directions are symmetric about the depth of the intersection point of the thin-layered low-resistivity body and the well axis (i.e., the depth of the thin-layered low-resistivity body) in the direction of the wellbore depth change, therefore, the depth of the thin-layered low-resistivity body beside the well can be directly determined from the central position of the anomaly of the first apparent conductivity curve in the same-named directions of the apparent conductivity curves in the same-named directions.

[0145] Illustrate by way of example, refer to Figure 5 as shown Figure 5 is a graph of the first apparent conductivity of a thin-layered low-resistivity body. XX is the same-named component, the abscissa is the depth, and the ordinate is the conductivity. Then the XX conductivity curve is symmetric about X = 0m in the depth direction (change of the abscissa), and this point of 0m is the intersection point of the thin-layered low-resistivity body and the well axis.

[0146] Step 03: Obtain the azimuth of the thin-layered low-resistivity body beside the well based on the first apparent conductivity.

[0147] Furthermore, obtaining the azimuth of the thin-layered low-resistivity body beside the well based on the first apparent conductivity includes: based on the first apparent conductivity, combining the preliminary azimuth angle expression of the low-resistivity body and the sign of the first apparent conductivity, determine the azimuth of the thin-layered low-resistivity body beside the well.

[0148] Specifically, calculate the preliminary azimuth angle of formula (1) is:

[0149]

[0150] Among them, is the preliminary azimuth angle of the low-resistivity body, σ' yz is the first apparent conductivity of the Y-direction coil transmitting and the Z-direction coil receiving, σ' xz is the first apparent conductivity of the X-direction coil transmitting and the Z-direction coil receiving.

[0151] Limited by the range of the arctangent function, there are two preliminary orientations of the calculated thin-layered low-resistivity body, corresponding to the actual orientations of the thin-layered low-resistivity body in the ranges of 0°-180° and 180°-360° respectively, and the two differ by 180°, as Figure 6 shown. However, when the low-resistivity thin layer is in the orientation of 0°-180°, the first apparent conductivity in the ZY direction is greater than 0; when the low-resistivity thin layer is in the orientation of 180°-360°, the first apparent conductivity in the ZY direction is less than 0. Therefore, it is necessary to use the sign of the first apparent conductivity in the ZY direction to determine the actual orientation range of the reservoir low-resistivity thin layer, and then combine the calculated preliminary orientation of the low-resistivity thin layer to establish a one-to-one correspondence between the preliminary calculated orientation of the low-resistivity thin layer and the actual orientation of the low-resistivity body.

[0152] Specifically, first use formula (1) to calculate a preliminary orientation angle of a low-resistivity thin layer. However, the calculated preliminary orientation angle of the low-resistivity thin layer does not correspond one-to-one with the actual orientation angle, but one calculated orientation corresponds to two actual orientations, and these two actual orientations are respectively between 0-180° and 180°-360°, and the two orientations differ by 180°. At this time, it is necessary to judge whether the actual orientation of the true low-resistivity thin layer is in the interval of 0-180° or in the interval of 180°-360° according to the sign of the first apparent conductivity in the ZY direction. After determination, a one-to-one correspondence is formed between the preliminary orientation and the actual orientation. But it must be noted that the preliminary orientation is not equal to the actual orientation, but only corresponds one-to-one between the two, and it is also necessary to perform conversion according to the Figure 6 relationship shown, so as to finally determine the orientation of the thin-layered low-resistivity body beside the well.

[0153] Step 04: Rotate the thin-layered low-resistivity body beside the well to the 0° orientation, and obtain the second apparent conductivity in all preset directions measured by all receiving coils when the thin-layered low-resistivity body is at the 0° orientation and the intersection point of the thin-layered low-resistivity body and the well axis is at the midpoint of the transmitting and receiving coils.

[0154] Here, the first conductivity data in nine directions are transformed to obtain the second apparent conductivity data in nine directions when the thin-layered low-resistivity body beside the well is at the 0° orientation.

[0155] The specific transformation method is as follows. Assume that the actual orientation of the thin-layered low-resistivity body beside the well obtained in step 03 is Rotate the first conductivity data by the orientation to obtain the second apparent conductivity in nine directions when the thin-layered low-resistivity body beside the well is at the 0° orientation.

[0156] Step 05: Obtain the dip angle of the thin-layered low-resistivity body beside the well based on the second apparent conductivity data.

[0157] Numerical calculations show that the dip angle of the thin-layered low-resistivity body beside the well is related to the apparent conductivities in the XZ, XX, and ZZ directions. Using the second apparent conductivities in the XZ, XX, and ZZ directions after homing in Step 04, the dip angle of the thin-layered low-resistivity body beside the well is calculated by the following formula (II):

[0158]

[0159] where the angle θ is the dip angle of the thin-layered low-resistivity body beside the well, and σ xz is the second apparent conductivity received by the coil in the Z direction when the transmitting coil is in the X direction, and σ xx is the second apparent conductivity received by the coil in the X direction when the transmitting coil is in the X direction; σ zz is the second apparent conductivity received by the coil in the Z direction when the transmitting coil is in the Z direction..

[0160] Step 06: Determine the position of the thin-layered low-resistivity body beside the well based on the position relationship between the instrument coordinate system and the formation coordinate system, the depth of the thin-layered low-resistivity body beside the well, the azimuth of the thin-layered low-resistivity body beside the well, and the dip angle of the thin-layered low-resistivity body beside the well.

[0161] In Steps 03 and 05, the azimuth and dip angle of the thin-layered low-resistivity body beside the well are the azimuth and dip angle of the thin-layered low-resistivity body relative to the X direction of the instrument. After obtaining the azimuth and dip angle of the thin-layered low-resistivity body relative to the X direction of the instrument, it is necessary to obtain the true azimuth and true dip angle of the thin-layered low-resistivity body in the formation coordinate system according to the position relationship between the instrument coordinate system and the formation coordinate system recorded by the instrument, so as to obtain the actual depth, azimuth, and dip angle of the thin-layered low-resistivity body beside the well, and then determine the position of the thin-layered low-resistivity body beside the well.

[0162] Optionally, the conversion methods of the dip angle and azimuth of the thin-layered low-resistivity body beside the well in different coordinate systems include, but are not limited to, the Euler angle method, the quaternion method, etc.

[0163] Those of ordinary skill in the art can realize that the units and algorithm steps of each example described in combination with the embodiments disclosed herein can be implemented by electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are executed in a hardware or software manner depends on the specific application and design constraints of the technical solution. Professional technicians can use different methods to implement the described functions for each specific application, but such implementation should not be considered to exceed the scope of the present invention. Those skilled in the art can clearly understand that for the convenience and brevity of description, the specific working processes of the above-described systems, devices, and units can refer to the corresponding processes in the foregoing method embodiments, and will not be repeated here.

[0164] In several embodiments provided by the present application, it should be understood that the disclosed systems, devices, and methods can be implemented in other ways. For example, the device embodiments described above are merely illustrative. For example, the division of the units is only a logical function division. In actual implementation, there can be other division methods. For example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the displayed or discussed couplings or direct couplings or communication connections to each other can be through some interfaces. The indirect couplings or communication connections of the devices or units can be in electrical, mechanical, or other forms. The units described as separate components may or may not be physically separated. The components displayed as units may or may not be physical units, that is, they can be located in one place or distributed to multiple network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0165] The basic principles of the present application have been described above in conjunction with specific embodiments. However, it should be noted that the advantages, benefits, effects, etc. mentioned in the present application are only examples and not limitations. It cannot be considered that these advantages, benefits, effects, etc. are essential for each embodiment of the present application. In addition, the above-disclosed specific details are only for the purposes of illustration and facilitating understanding, rather than limitations. These details do not limit the present application to necessarily adopt the above specific details for implementation.

[0166] The block diagrams of the devices, apparatuses, equipment, and systems involved in the present application are only illustrative examples and do not intend to require or imply that they must be connected, arranged, and configured in the manner shown in the block diagrams. As those skilled in the art will recognize, these devices, apparatuses, equipment, and systems can be connected, arranged, and configured in any manner.

[0167] It should also be noted that in the devices, equipment, and methods of the present application, each component or each step can be decomposed and / or recombined. These decompositions and / or recombinations should be regarded as equivalent solutions of the present application.

[0168] The above description of the disclosed aspects enables any person skilled in the art to make or use the present application. Various modifications to these aspects are very obvious to those skilled in the art, and the general principles defined herein can be applied to other aspects without departing from the scope of the present application. Therefore, the present application is not intended to be limited to the aspects shown herein, but rather to the broadest scope consistent with the principles and novel features disclosed herein.

[0169] In the description of the present application, the meaning of "a plurality of" is at least two, such as two, three, etc., unless otherwise specifically defined. In the embodiments of the present application, all directional indications (such as up, down, left, right, front, back, top, bottom...) are only used to explain the relative positional relationship and movement conditions between components in a specific posture (as shown in the drawings). If the specific posture changes, the directional indications will also change accordingly. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device that includes a series of steps or units is not limited to the listed steps or units, but optionally further includes steps or units not listed, or optionally further includes other steps or units inherent to these processes, methods, products or devices.

[0170] In addition, the mention of "embodiment" herein means that the specific features, structures or characteristics described in connection with the embodiment may be included in at least one embodiment of the present application. The phrase appears in various places in the specification and does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment mutually exclusive with other embodiments. Those skilled in the art will explicitly and implicitly understand that the embodiments described herein may be combined with other embodiments.

[0171] As described above, it is only the specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present invention can easily think of changes or substitutions, which should all be covered by the protection scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.

Claims

1. A method for determining the position of a thin-layered low-resistivity body beside a well, characterized in that The method is implemented based on the coil array structure, which includes a transmitting coil and a receiving coil; the method includes: Collecting the first apparent conductivity in all depths and all preset directions; Determining the depth of the thin-layered low-resistivity body beside the well according to the first apparent conductivity; Obtaining the azimuth of the thin-layered low-resistivity body beside the well based on the first apparent conductivity; Rotating the thin-layered low-resistivity body beside the well to the 0° azimuth, and obtaining the second apparent conductivity in all preset directions measured by all receiving coils when the thin-layered low-resistivity body is at the 0° azimuth and the intersection point of the thin-layered low-resistivity body and the well axis is at the midpoint of the transmitting and receiving coils; Obtaining the dip angle of the thin-layered low-resistivity body beside the well based on the second apparent conductivity data; Based on the positional relationship between the instrument coordinate system and the formation coordinate system, determining the position of the thin-layered low-resistivity body beside the well in the formation coordinate system based on the depth, azimuth, and dip angle of the thin-layered low-resistivity body beside the well; 2. The method for determining the position of a thin-layered low-resistivity body beside a well according to claim 1, wherein All the preset directions include nine directions; The collecting of the first apparent conductivity in all preset directions includes: measuring the magnetic field components in nine directions and converting the magnetic field components into the first apparent conductivity.

3. The method for determining the position of a thin-layered low-resistivity body beside a well according to claim 1, characterized in that, The determining of the depth of the thin-layered low-resistivity body beside the well according to the first apparent conductivity includes: Extracting the first apparent conductivity in the same-named directions from all the first apparent conductivities and determining the central position of the anomaly of the first apparent conductivity curve in the same-named directions caused by the thin-layered low-resistivity body; the first apparent conductivity in the same-named directions is the first apparent conductivity with the same direction as that of the transmitting coil and the receiving coil; Based on the symmetry of the anomaly of the first apparent conductivity curve in the same-named directions caused by the thin-layered low-resistivity body in the depth direction, determining the depth of the thin-layered low-resistivity body beside the well according to the central position of the anomaly of the first apparent conductivity curve in the same-named directions.

4. The method for determining the position of a thin-layered low-resistivity body beside a well according to claim 1, wherein The obtaining of the azimuth of the thin-layered low-resistivity body beside the well based on the first apparent conductivity includes: based on the first apparent conductivity, combining the preliminary azimuth angle expression of the low-resistivity body and the sign of the first apparent conductivity to determine the azimuth of the thin-layered low-resistivity body beside the well.

5. The method for determining the position of a thin-layered low-resistivity body beside a well according to claim 4, characterized in that, The preliminary azimuth angle expression of the low-resistivity body is: Among them, is the preliminary azimuth angle of the low-resistivity body, and σ′ yz is the first apparent conductivity measured by the transmitting coil in the Y direction and the receiving coil in the Z direction, and σ′ xz is the first apparent conductivity measured by the transmitting coil in the X direction and the receiving coil in the Z direction.

6. The method for determining the position of a thin-layered low-resistivity body beside a well according to claim 1, characterized in that, The formula for obtaining the dip angle of the thin-layered low-resistivity body beside the well based on the second apparent conductivity data is: where the angle θ is the dip angle of the thin-layered low-resistivity body beside the well, and σ xz is the second apparent conductivity measured by the transmitting coil in the X direction and the receiving coil in the Z direction, and σ xx is the second apparent conductivity measured by the transmitting coil in the X direction and the receiving coil in the X direction; σ zz is the second apparent conductivity measured by the transmitting coil in the Z direction and the receiving coil in the Z direction.

7. A device for determining the position of a thin-layered low-resistivity body beside a well, characterized in that, Including: A collection module for collecting the first apparent conductivity in all preset directions; A depth determination module for determining the depth of the thin-layered low-resistivity body beside the well according to the first apparent conductivity; An azimuth determination module for obtaining the azimuth of the thin-layered low-resistivity body beside the well based on the first apparent conductivity; A homing module for rotating the thin-layered low-resistivity body beside the well to the 0° azimuth and obtaining the second apparent conductivity in all preset directions measured by the receiving coils when the thin-layered low-resistivity body is at the 0° azimuth and the intersection point of the thin-layered low-resistivity body and the well axis is at the midpoint of the transmitting and receiving coil arrays; A dip angle determination module for obtaining the dip angle of the thin-layered low-resistivity body beside the well based on the second apparent conductivity data; A position parameter determination module determines the position of a thin-layered low-resistivity body beside a well in a formation coordinate system based on the positional relationship between the instrument coordinate system and the formation coordinate system, the depth of the thin-layered low-resistivity body beside the well, the azimuth of the thin-layered low-resistivity body beside the well, and the dip angle of the thin-layered low-resistivity body beside the well.

8. The device for determining the position of a thin-layered low-resistivity body beside a well according to claim 1, characterized in that, The acquisition module includes: an orthogonal coil system structure disposed in the well for measuring magnetic field components in the well; the coil system structure includes three transmitting coils and three receiving coils; wherein, the three transmitting coils are respectively disposed in the X direction, Y direction, and Z direction of the instrument coordinate system; the three receiving coils are respectively disposed in the X direction, Y direction, and Z direction of the instrument coordinate system.

9. An electronic device, characterized in that, It includes a memory and a processor, and the memory is used to store one or more computer instructions, wherein, when the one or more computer instructions are executed by the processor, the method for determining the position of the thin-layered low-resistivity body beside the well as described in any one of claims 1-6 is implemented.

10. A computer-readable storage medium, characterized in that, A computer program is stored in the computer-readable storage medium, and when the computer program is executed by one or more processors, it is used to implement the method for determining the position of the thin-layered low-resistivity body beside the well as described in any one of claims 1-6.

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