Substrate processing apparatus and substrate processing method

Abstract

The invention relates to a substrate processing apparatus and a substrate processing method. According to the present invention, two types of substrates (a first substrate and a second substrate smaller than the first substrate) having different sizes in plan view can be processed by one substrate processing apparatus, and the two second substrates can be independently lifted and lowered when the two second substrates are lifted and lowered. A substrate processing apparatus is provided with: a mounting table having a mounting surface on which one first substrate or two second substrates are selectively mounted, and a plurality of through-holes that pass through the mounting surface in the vertical direction at positions that do not overlap with a bisector line that bisects a long side of the mounting surface, and that open to the mounting surface; a processing chamber in which processing is performed on the substrate on the mounting table; the driving mechanism is provided with a plurality of lifting pins and a driving part; and a control unit that controls the drive unit, in which a plurality of drive through-holes through which the drive mechanism passes are provided in the bottom of the processing chamber, and the plurality of drive through-holes overlap the plurality of through-holes.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method. Background Art

[0002] There is known a substrate processing apparatus that performs substrate processing such as etching and vapor deposition on a substrate (for example, refer to Patent Document 1). The substrate processing apparatus described in Patent Document 1 includes: a substrate support table that supports two substrates to be processed side by side; and a lift pin assembly that includes a plurality of lift pins provided so as to be able to move up and down through the substrate support table. In this substrate processing apparatus, the two substrates on the substrate support table can be lifted and lowered simultaneously by the up and down movement of the lift pin assembly.

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: Korean Patent Publication No. 10-2102922 Summary of the Invention

[0006] Problems to be Solved by the Invention

[0007] The technology of the present disclosure can perform processing on two substrates (a first substrate and a second substrate smaller than the first substrate) having different sizes in a plan view using one substrate processing apparatus, and can independently perform lifting and lowering of each second substrate when lifting and lowering two second substrates.

[0008] Solutions to the Problems

[0009] One aspect of the technology of the present disclosure is a substrate processing apparatus, wherein the substrate processing apparatus includes: a mounting table having a mounting surface and a plurality of through holes, the mounting surface selectively mounting one first substrate or two second substrates whose area in plan view is smaller than the area of the first substrate in plan view, the plurality of through holes penetrating in the vertical direction at positions not overlapping with the bisecting line that bisects the long side of the mounting surface and opening at the mounting surface; a processing chamber in which processing is performed on the first substrate or each of the second substrates above the mounting table; a driving mechanism having a plurality of lifting pins and a driving unit, the plurality of lifting pins being movable relative to the mounting table in the vertical direction and inserted into the through holes, when the first substrate is mounted on the mounting surface, the plurality of lifting pins can support the first substrate from the lower surface side, when two second substrates are mounted on the mounting surface, the plurality of lifting pins can independently support each of the second substrates from the lower surface side, and the driving unit drives each of the lifting pins in the vertical direction; and a control unit that controls the driving unit, and a plurality of driving through holes through which the driving mechanism passes are provided at the bottom of the processing chamber, and the plurality of driving through holes in plan view overlap with the plurality of through holes.

[0010] Effects of the Invention

[0011] According to the present disclosure, it is possible to perform processing on two types of substrates (a first substrate and a second substrate smaller than the first substrate) having different sizes in plan view using one substrate processing apparatus, and it is possible to independently perform lifting of each of the second substrates when lifting two second substrates. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 is a schematic vertical cross-sectional view showing a first state of the substrate processing apparatus of the present disclosure.

[0013] Figure 2 is a schematic vertical cross-sectional view showing a second state of the substrate processing apparatus of the present disclosure.

[0014] Figure 3 is from Figure 1 a view (schematic plan view) observed in the direction of arrow A in

[0015] Figure 4 is from Figure 2 a view (schematic plan view) observed in the direction of arrow B in

[0016] Figure 5 is a block diagram showing an example of the hardware structure of the substrate processing apparatus.

[0017] Figure 6 is a block diagram showing an example of the control state in the substrate processing apparatus.

[0018] Figure 7 is a block diagram showing an example of a control state in a substrate processing apparatus.

[0019] Figure 8 is a block diagram showing an example of a control state in a substrate processing apparatus.

[0020] Figure 9 is a block diagram showing an example of a control state in a substrate processing apparatus.

[0021] Explanation of Reference Numerals

[0022] 1, first mounting table; 13, first mounting surface; 15, first through hole; 2, second mounting table; 23, second mounting surface; 25, second through hole; 3, support portion; 4, processing chamber; 41, bottom; 42, driving through hole; 5, driving mechanism; 52, lifting pin; 53, driving portion; 9, control portion; 10, substrate processing apparatus; O11, center line; G1, first substrate; G2, second substrate. Detailed Description of the Invention

[0023] As described above, in the technology of Patent Document 1, two substrates on a substrate support table can be lifted and lowered simultaneously. On the other hand, there are cases where it is desired to lift and lower two substrates on the substrate support table independently of each other. In this case, in the technology of Patent Document 1, independent lifting and lowering of each substrate cannot be performed. In addition, in recent years, substrate processing for two types of substrates (a first substrate and a second substrate smaller than the first substrate) having different sizes when viewed from above has been required. In addition, in the conventional technology, there is a technology capable of performing substrate processing for two second substrates, but substrate processing for one first substrate larger than the second substrate cannot be performed. Therefore, when it is desired to perform substrate processing for the first substrate, it is necessary to separately prepare a substrate processing apparatus capable of performing this substrate processing, and accordingly, the equipment investment becomes a burden.

[0024] Hereinafter, an embodiment of the technology of the present disclosure will be described with reference to the drawings. However, the structures described in the following embodiments are merely examples and are not limited to those structures. For example, each part included in this structure can be replaced with any member that can perform the same function. In addition, any structure can be added.

[0025] Figure 1 is a schematic vertical cross-sectional view showing a first state of the substrate processing apparatus of the present disclosure. Figure 2 is a schematic vertical cross-sectional view showing a second state of the substrate processing apparatus of the present disclosure. Figure 3 is from Figure 1 viewed in the direction of arrow A in (schematic top view). Figure 4 is fromFigure 2 View (schematic top view) observed in the direction of arrow B in Figure 5 It is a block diagram showing an example of the hardware structure of a substrate processing apparatus. Figures 6 - 9 They are respectively block diagrams showing an example of the control state in the substrate processing apparatus. In addition, Figure 1 is also Figure 3 Cross-section along line C - C in Figure 2 is also Figure 4 Cross-section along line D - D in . Additionally, hereinafter, for convenience of explanation, the upper side in Figure 1 and Figure 2 is referred to as "upper (or above)", and the lower side is referred to as "lower (or below)".

[0026] Figure 1 , Figure 2 The substrate processing apparatus 10 shown, for example, is a device for manufacturing an organic EL (OLED) panel. This substrate processing apparatus 10 can perform various processes (substrate processing methods) such as dry etching, sputtering, and CVD (chemical vapor deposition) on a glass substrate of a substrate (substrate to be processed) G as a processing target. Substrates G that can be processed by the substrate processing apparatus 10 include a first substrate G1 and a second substrate G2. As shown in Figure 3 , the first substrate G1 is a substrate whose shape in a top view is a rectangle with the left - right direction in Figure 3 as the long - side direction. As shown in Figure 4 , the second substrate G2 is a substrate whose shape in a top view is a rectangle with the left - right direction in Figure 4 as the short - side direction. The area of the second substrate G2 in a top view is smaller than the area of the first substrate G1 in a top view. In the present embodiment, the length of the long side of the second substrate G2 is the same as the length of the short side of the first substrate G1. Additionally, the length of the short side of the second substrate G2 is approximately 1 / 2 of the length of the long side of the first substrate G1.

[0027] As shown in Figure 1 , Figure 2 , the substrate processing apparatus 10 includes a first mounting table 1, a second mounting table 2, a support portion 3, a processing chamber 4, and a drive mechanism 5. In addition, the substrate processing apparatus 10 can be used interchangeably between the first mounting table 1 and the second mounting table 2. Additionally, as shown in Figure 5 in (a), Figure 5 in (b), the substrate processing apparatus 10 includes a voltage application portion 6L and a voltage application portion 6R, a refrigerant supply portion 7L and a refrigerant supply portion 7R, a monitoring portion 8, and a control portion 9.

[0028] As shown in Figure 1As shown, the first mounting table 1 is composed of a laminated body having a plate-shaped base portion 11 and a first electrostatic adsorption portion (first electrostatic holding disk) 12 provided on the base portion 11. The first electrostatic adsorption portion 12 has a circuit pattern applicable to electrostatic adsorption of the first substrate G1. The upper surface of the first electrostatic adsorption portion 12 functions as a first mounting surface 13, and the first mounting surface 13 is a rectangle with the left-right direction in Figure 3 as the long side direction, and one first substrate G1 is mounted. Moreover, the first electrostatic adsorption portion 12 can apply a voltage from the voltage application portion 6L in a state where the first substrate G1 is mounted on the first mounting surface 13, so as to adsorb the first substrate G1 by electrostatic force. In addition, the voltage application portion 6R is not used during the first substrate processing, so it is not energized.

[0029] In addition, a first flow path 14 through which a refrigerant (backside cooling gas) Q for cooling the first substrate G1 on the first mounting surface 13 passes is provided in the first mounting table 1. The first flow path 14 opens at multiple locations on the first mounting surface 13. Thereby, the refrigerant Q passing through the first flow path 14 can be supplied between the first mounting surface 13 and the lower surface (back surface) of the first substrate G1. By supplying the refrigerant Q, heat exchange can be performed with the first substrate G1, and thus, the temperature of the first substrate G1 can be adjusted. In addition, the first flow path 14 is connected to a refrigerant supply portion 7L that supplies the refrigerant Q. In addition, the refrigerant supply portion 7R is not used during the first substrate processing, so the refrigerant Q is not supplied.

[0030] A plurality of first through holes 15 penetrating in the vertical direction and opening at the first mounting surface 13 are provided in the first mounting table 1. Lift pins 52 of a drive mechanism 5 described later are inserted into the respective first through holes 15 in a manner capable of moving (able to protrude and retract). The lift pins 52 can support the first substrate G1 from the lower surface side in a state of protruding from the first through holes 15 (refer to the double-dashed line in Figure 1 . As Figure 3As shown in the top view of the state where the first substrate G1 is placed on the first placement surface 13, a plurality of first through holes 15 are arranged at positions not overlapping with the center line O11 of the first substrate G1. The center line O11 is the bisector that bisects the long side of the first substrate G1. In addition, in the present embodiment, the center line O11 overlaps with the center line of the first placement surface 13, that is, the bisector that bisects the long side of the first placement surface 13 in the top view. Furthermore, among the plurality of first through holes 15, there is a first through hole 15 that overlaps with the center line O12 orthogonal to the center line O11 in the top view. The center line O12 is the bisector that bisects the short side of the first substrate G1. The plurality of first through holes 15 are symmetrically arranged with respect to the center line O11 and the center line O12 of the first substrate G1. By such a line-symmetric arrangement, the first substrate G1 can be stably supported from the lower surface side by the lifting pins 52 protruding from each of the first through holes 15. In addition, regarding the arrangement number of the first through holes 15 and the line-symmetric arrangement form, it is not limited to Figure 3 the case shown.

[0031] As Figure 2 shown, the second placement table 2 is composed of a laminated body having a plate-shaped base portion 21 and a second electrostatic adsorption portion (second electrostatic holding disk) 22 provided on the base portion 21. The second electrostatic adsorption portion 22 has a circuit pattern suitable for electrostatic adsorption of each second substrate G2. The upper surface of the second electrostatic adsorption portion 22 functions as a second placement surface 23 for placing two second substrates G2. Thus, the placement efficiency (surface utilization efficiency) of the placement substrate G on the second placement surface 23 is improved compared with the first placement surface 13. In the present embodiment, the second placement surface 23 is divided into a second left placement surface 23L for placing one of the two second substrates G2 (hereinafter sometimes referred to as "second substrate G2L") and a second right placement surface 23R for placing the other second substrate G2 (hereinafter sometimes referred to as "second substrate G2R"). Moreover, the second electrostatic adsorption portion 22 can apply a voltage from the voltage application portion 6L in the state where the second substrate G2L is placed on the second left placement surface 23L, so as to adsorb the second substrate G2L by electrostatic force. In addition, the second electrostatic adsorption portion 22 can apply a voltage from the voltage application portion 6R in the state where the second substrate G2R is placed on the second right placement surface 23R, so as to adsorb the second substrate G2R by electrostatic force. In this way, the second placement table 2 can perform the adsorption of the second substrate G2L and the adsorption of the second substrate G2R independently. Thus, for example, each adsorption can be performed at different times.

[0032] In addition, a second flow path (flow path) 24 through which a refrigerant Q for cooling each second substrate G2 on the second mounting surface 23 is provided in the second mounting table 2. In the present embodiment, the second flow path 24 is divided into a second flow path 24L through which the refrigerant Q for cooling the second substrate G2L passes and a second flow path 24R through which the refrigerant Q for cooling the second substrate G2R passes. The second flow path 24L opens at multiple locations on the second left mounting surface 23L. Thereby, the refrigerant Q passing through the second flow path 24L can be supplied between the second left mounting surface 23L and the lower surface of the second substrate G2L. By supplying this refrigerant Q, heat exchange can be performed with the second substrate G2L, and thus, the temperature of the second substrate G2L can be adjusted. Similarly, the second flow path 24R opens at multiple locations on the second right mounting surface 23R. Thereby, the refrigerant Q passing through the second flow path 24R can be supplied between the second right mounting surface 23R and the lower surface of the second substrate G2R. By supplying this refrigerant Q, heat exchange can be performed with the second substrate G2R, and thus, the temperature of the second substrate G2R can be adjusted. In this way, the second mounting table 2 can separately perform cooling for the second substrate G2L and cooling for the second substrate G2R. Thereby, for example, each cooling can be performed at different times. In addition, the second flow path 24L is connected to the refrigerant supply unit 7L, and the second flow path 24R is connected to the refrigerant supply unit 7R.

[0033] A plurality of second through holes (through holes) 25 penetrating in the vertical direction and opening at the second mounting surface 23 are provided in the second mounting table 2. Lift pins 52 of the drive mechanism 5 are inserted into the respective second through holes 25 in a movable manner. The lift pins 52 can support each second substrate G2 from the lower surface side in a state of protruding from the second through holes 25 (refer to the double-dashed line in Figure 2 . As Figure 4 shown, when viewed from above in a state where two second substrates G2 are arranged side by side on the second mounting surface 23, that is, in a state where the second substrate G2L is mounted on the second left mounting surface 23L and the second substrate G2R is mounted on the second right mounting surface 23R, the plurality of second through holes 25 are arranged at positions that do not overlap with the portion between the second substrate G2L and the second substrate G2R. In addition, the portion between the second substrate G2L and the second substrate G2R is located at a position overlapping the center line O11 when viewed from above. The plurality of second through holes 25 are symmetrically arranged with respect to the portion (center line O11) between the second substrate G2L and the second substrate G2R.

[0034] In addition, a plurality of second through-holes 25 that open on the second left mounting surface 23L are arranged symmetrically with respect to the center line O21L of the second substrate G2L. The center line O21L is a bisector that bisects the short side of the second substrate G2L. Moreover, a plurality of second through-holes 25 that open on the second left mounting surface 23L are arranged symmetrically with respect to the center line O22L that is orthogonal to the center line O21L. The center line O22L is a bisector that bisects the long side of the second substrate G2L. In this way, in the second left mounting surface 23L, the plurality of second through-holes 25 are arranged in line symmetry. By this line-symmetric arrangement, on the second left mounting surface 23L, the second substrate G2L can be stably supported from the lower surface side by the lifting pins 52 protruding from the respective second through-holes 25.

[0035] Similarly, a plurality of second through-holes 25 that open on the second right mounting surface 23R are arranged symmetrically with respect to the center line O21R of the second substrate G2R. The center line O21R is a bisector that bisects the short side of the second substrate G2R. Moreover, a plurality of second through-holes 25 that open on the second right mounting surface 23R are arranged symmetrically with respect to the center line O22R that is orthogonal to the center line O21R. The center line O22R is a perpendicular bisector that bisects the long side of the second substrate G2R. In this way, in the second right mounting surface 23R, the plurality of second through-holes 25 are arranged in line symmetry. By this line-symmetric arrangement, on the second right mounting surface 23R, the second substrate G2R can be stably supported from the lower surface side by the lifting pins 52 protruding from the respective second through-holes 25. In addition, regarding the arrangement number of the second through-holes 25 and the line-symmetric arrangement form, it is not limited to Figure 4 the case shown.

[0036] As Figure 1 、 Figure 2 shown, the support portion 3 is fixed to the bottom 41 of the processing chamber 4. The support portion 3 is a support table that supports the first mounting table 1 and the second mounting table 2 in a manner that allows replacement between the first mounting table 1 and the second mounting table 2. Hereinafter, the state in which the first mounting table 1 is supported by the support portion 3 is referred to as the "first state", and the state in which the second mounting table 2 is supported by the support portion 3 is referred to as the "second state".

[0037] The processing chamber 4 is box-shaped and its airtightness is ensured. Inside the processing chamber 4, in the first state, the various processes for the first substrate G1 on the first mounting table 1 are performed, and in the second state, the various processes for the respective second substrates G2 on the second mounting table 2 are performed.

[0038] A drive mechanism 5 is disposed at the bottom 41 of the processing chamber 4. In the present embodiment, the drive mechanism 5 includes the same number (20) of drive units 51 as the number of arrangements of the second through holes 25. Each drive unit 51 has: a lifting pin 52 that can move in the vertical direction relative to the support portion 3; and a drive portion 53 that is provided below the lifting pin 52 and drives the lifting pin 52 in the vertical direction. The structure of the drive portion 53 is not particularly limited, and for example, a structure having a motor or the like, a structure having a cylinder or the like, or the like can be used. In addition, each drive unit 51 has: a first connecting member 54 that is connected to the lower portion of the lifting pin 52 and extends downward; and a second connecting member 55 that is connected to the lower portion of the first connecting member 54 and is located outside the processing chamber 4. The second connecting member 55 includes a conductive member 551 that constitutes its upper portion and an insulating member 552 that constitutes its lower portion. In addition, each drive unit 51 has a conductive bellows 56 for blocking the vacuum atmosphere and the atmospheric atmosphere. The bellows 56 is located between the lower surface of the first mounting table 1 and the upper surface of the conductive member 551 in the first state, and is located between the lower surface of the second mounting table 2 and the upper surface of the conductive member 551 in the second state. In addition, each drive unit 51 has: a sliding member 57 that is provided at the lower portion of the second connecting member 55; and a guiding member 58 that is fixed to the bottom 41 of the processing chamber 4. The sliding member 57 is connected to a linear motion unit (not shown) formed by combining a ball screw and a motor, and can be lifted and lowered in the vertical direction by a drive unit control device (not shown). In addition, the sliding member 57 is guided by the guiding member 58 when it is lifted and lowered in the vertical direction.

[0039] In the drive mechanism 5 having the above structure, when feeding the substrate G into the processing chamber 4 or discharging the substrate G from the processing chamber 4, the lifting pins 52 are used. When feeding the substrate G into the processing chamber 4, the lifting pins 52 are set to protrude to the uppermost position, and the substrate G from a transfer arm (not shown) can be supported on the respective lifting pins 52 in this state. Then, the lifting pins 52 are lowered to the initial position (the state where they are lowered to the maximum extent) while supporting the substrate G. Thereby, various processes for the substrate G can be performed. In addition, when discharging the processed substrate G from the processing chamber 4, the lifting pins 52 are set to protrude to the uppermost position again and the substrate G is supported on the lifting pins 52. Then, the transfer arm is moved below the substrate G, and the lifting pins 52 are lowered below the transfer arm, so that the substrate G is transferred to the transfer arm, and the substrate G can be discharged using the transfer arm.

[0040] A plurality of drive through holes 42 through which the lifting pins 52 and the first connecting members 54 of the drive mechanism 5 pass are provided in the bottom 41 of the processing chamber 4. Each drive through hole 42 is formed by a through hole that penetrates the bottom 41 in the vertical direction. As Figure 3As shown, when viewed from above, a plurality of drive through-holes 42 (except for the leftmost drive through-hole 42 and the rightmost drive through-hole 42 located on the center line O12) overlap with a plurality of first through-holes 15 of the first mounting table 1. As Figure 4 shown, when viewed from above, a plurality of drive through-holes 42 overlap with a plurality of second through-holes 25 of the second mounting table 2. In addition, when the first mounting table 1 and the second mounting table 2 overlap when viewed from above, a plurality of first through-holes 15 and a plurality of second through-holes 25 (except for one second through-hole 25 on the left side located on the center line O22L and one second through-hole 25 on the right side located on the center line O22R) overlap. Through such a positional relationship between the holes, the lifting pins 52 of the common drive mechanism 5 can be inserted with respect to the first mounting table 1 and the second mounting table 2 for use. In addition, in the substrate processing apparatus 10, the entire drive mechanism 5 can be arranged, that is, housed in the processing chamber 4. In this case, the drive through-holes 42 are omitted from the bottom 41 of the processing chamber 4.

[0041] As described above, the substrate processing apparatus 10 includes a voltage application unit 6L and a voltage application unit 6R, a refrigerant supply unit 7L and a refrigerant supply unit 7R, a monitoring unit 8, and a control unit 9 (refer to Figure 5 (a) of Figure 5 (b)). For the voltage application unit 6L and the voltage application unit 6R, at least one of these voltage application units commonly applies a voltage to the first electrostatic adsorption unit 12 and the second electrostatic adsorption unit 22. In the present embodiment, the voltage application unit 6L includes a group of a power supply 61L grounded and a circuit unit 62L that performs switching such as turning on / off the power supply 61L. Similarly, the voltage application unit 6R includes a group of a power supply 61R grounded and a circuit unit 62R that performs switching such as turning on / off the power supply 61R. When the voltage application unit 6L and the voltage application unit 6R apply a voltage to the first electrostatic adsorption unit 12, one of the two groups is responsible for applying the voltage. In addition, when the voltage application unit 6L and the voltage application unit 6R apply a voltage to the second electrostatic adsorption unit 22, each group is responsible for applying the voltage. Thereby, electrostatic adsorption for the second substrate G2L and electrostatic adsorption for the second substrate G2R can be performed independently.

[0042] The refrigerant supply unit 7L and the refrigerant supply unit 7R commonly supply a refrigerant Q to at least one of the first flow path 14, the second flow path 24L, and the second flow path 24R. The refrigerant Q is not particularly limited, and for example, an inert gas such as helium, nitrogen, or argon is preferably used.

[0043] As Figure 5As shown, the monitoring unit 8 includes a galvanometer 81L and a galvanometer 81R, a pressure gauge 82L and a pressure gauge 82R, and a flowmeter 83L and a flowmeter 83R. The monitoring unit 8 monitors the electrostatic adsorption state (adsorption state) of the first substrate G1 at the first electrostatic adsorption unit 12 and the electrostatic adsorption state of the second substrate G2 at the second electrostatic adsorption unit 22. For the second substrate G2, the electrostatic adsorption states of the second substrate G2L and the second substrate G2R can be monitored individually. In addition, the monitoring unit 8 monitors the passage state of the refrigerant Q in the first flow path 14 and the passage state of the refrigerant Q in the second flow path 24. For the second flow path 24, the passage states of the refrigerant Q in the second flow path 24L and the second flow path 24R can be monitored individually. Regarding the monitoring of the electrostatic adsorption state at the first electrostatic adsorption unit 12 and the electrostatic adsorption state at the second electrostatic adsorption unit 22, they are the same except for the monitoring object and the galvanometer. Therefore, the electrostatic adsorption state at the first electrostatic adsorption unit 12 will be described representatively. The galvanometer 81L can measure the current value passing through the first electrostatic adsorption unit 12 when a voltage is applied to the first electrostatic adsorption unit 12 in the first state. Then, the monitoring unit 8 can monitor the electrostatic adsorption state at the first electrostatic adsorption unit 12 based on the measurement result of the galvanometer 81L, that is, the current value. For example, when the current value is less than the threshold value, it is determined that the electrostatic adsorption state at the first electrostatic adsorption unit 12 is good, and when the current value is equal to or greater than the threshold value, it is determined that the electrostatic adsorption state at the first electrostatic adsorption unit 12 is bad. When it is determined that the electrostatic adsorption state at the first electrostatic adsorption unit 12 is good, processing for the first substrate G1 can be performed. On the other hand, when it is determined that the electrostatic adsorption state at the first electrostatic adsorption unit 12 is bad, it is considered that there is a short circuit in the voltage application path including the electrostatic holding disk. Therefore, the processing is aborted, and for example, the replacement of the stage is studied. As a result, the electrostatic adsorption state at the first electrostatic adsorption unit 12 may be improved. In addition, the threshold value of the current value is, for example, pre-stored in the memory 92 of the control unit 9 (refer to Figure 5 ). In addition, the threshold value of the current value is preferably adjustable appropriately.

[0044] Regarding the monitoring of the passage state of the refrigerant Q in the first flow path 14 and the passage state of the refrigerant Q in the second flow path 24, they are the same except for the monitoring object, the flowmeter, and the pressure gauge. Therefore, the passage state of the refrigerant Q in the first flow path 14 will be described representatively. The pressure gauge 82L can measure the pressure of the refrigerant Q passing through the first flow path 14 in the first state. In addition, the flowmeter 83L can measure the flow rate of the refrigerant Q passing through the first flow path 14 in the first state. Then, the monitoring unit 8 can monitor the passage state of the refrigerant Q in the first flow path 14 based on the measurement results of the pressure gauge 82L, that is, the pressure, and the measurement results of the flowmeter 83L, that is, the flow rate. For example, when the pressure is above the threshold and the flow rate is less than the threshold, it is determined that the passage state of the refrigerant Q in the first flow path 14 is good. When the pressure is less than the threshold or the flow rate is above the threshold, it is determined that the passage state of the refrigerant Q in the first flow path 14 is bad. When it is determined that the passage state of the refrigerant Q in the first flow path 14 is good, the processing for the first substrate G1 can be performed. On the other hand, when it is determined that the passage state of the refrigerant Q in the first flow path 14 is bad, it is preferable to, for example, temporarily lift the first substrate G1 away from the first electrostatic adsorption portion 12 using the lifting pins 52 and then place it on the first electrostatic adsorption portion 12 again. Thus, there are cases where the passage state of the refrigerant Q in the first flow path 14 is improved. In addition, the threshold value of the pressure is, for example, pre-stored in the memory 92 of the control unit 9. In addition, the threshold value of the pressure is preferably capable of being appropriately changed. Similarly, the threshold value of the flow rate is also, for example, pre-stored in the memory 92 of the control unit 9 and is preferably capable of being appropriately changed. In addition, regarding the determination (monitoring) of the quality of the passage state of the refrigerant Q in the first flow path 14, in the present embodiment, it is based on both the pressure and the flow rate, but it is not limited thereto, as long as it is based on at least one of the pressure and the flow rate.

[0045] The control unit 9 includes a CPU 91 and a memory 92, and is communicatively connected to the driving unit 53 of the driving mechanism 5, the voltage application unit 6L and the voltage application unit 6R, the refrigerant supply units 7L and 7R, and each part of the ammeters 81L and 81R to the flowmeters 83L and 83R of the monitoring unit 8. The control unit 9 controls their operations. In addition, control programs and the like are pre-stored in the memory 92. Regarding an example of the control state of the control unit 9, refer to Figures 6 - 9 for description. In addition, Figures 6 - 9 The "lifting pin_01" to "lifting pin_20" in Figure 3 refer to the serial numbers (names) given to the lifting pins 52 passing through the driving through holes 42 in Figure 4 . Here, the ones passing through Figure 3 and Figure 4The lift pin 52 of the left-upper most drive through hole 42 in [the figure] is designated as "lift pin_01", and serial numbers are sequentially marked downward until the lift pin 52 of the drive through hole 42 that penetrates the right-lower most is marked as "lift pin_20". In addition, "drive unit_01" to "drive unit_20" are the serial numbers marked for the drive unit 53 that moves the lift pins 52 of "lift pin_01" to "lift pin_20" up and down.

[0046] As Figure 6 shown, when lifting and lowering the first substrate G1, the control unit 9 controls the drive unit 53 of "drive unit_01" to "drive unit_02", "drive unit_04" to "drive unit_10", "drive unit_11" to "drive unit_17", "drive unit_19" to "drive unit_20" to individually drive each lift pin 52. In addition, the drive unit 53 of "drive unit_03" and "drive unit_18" is not used for the lifting and lowering of the first substrate G1. Additionally, assuming that the drive unit 53 of "drive unit_03" and "drive unit_18" is also used for the lifting and lowering of the first substrate G1, the control unit 9 can control the drive unit 53 of "drive unit_01" to "drive unit_20" to simultaneously drive each lift pin 52.

[0047] As Figure 7 shown, when lifting and lowering the second substrate G2L, the control unit 9 can control the drive unit 53 of "drive unit_01" to "drive unit_10" to simultaneously drive each lift pin 52. On the other hand, when lifting and lowering the second substrate G2R, the control unit 9 can control the drive unit 53 of "drive unit_11" to "drive unit_20" to simultaneously drive each lift pin 52. In this way, the control unit 9 can group the drive unit 53 for each second substrate G2 and simultaneously drive each lift pin 52. In addition, "drive unit_01" to "drive unit_10" and "drive unit_11" to "drive unit_20" are respectively grouped into one group as group 1A. Moreover, with such control, the second substrate G2L and the second substrate G2R can be lifted and lowered independently as different group 1A. For example, when it is determined that the electrostatic adsorption state for the second substrate G2L among the second substrate G2L and the second substrate G2R is good while the electrostatic adsorption state for the second substrate G2R is poor, it is preferable to temporarily stop the processing for both second substrates G2. In this case, it is preferable to keep the second substrate G2L as it is, and after the second substrate G2R is temporarily separated from the second right mounting surface 23R by the lift pin 52, it is again mounted on the second right mounting surface 23R. As a result, the electrostatic adsorption state for the second substrate G2R is improved, and ultimately, the processing for both second substrates G2 can be carried out.

[0048] As Figure 8 shown, when lifting and lowering the second substrate G2L, Figure 7Similarly, the control unit 9 can control the drive units 53 of "Drive Unit_01" to "Drive Unit_10" to simultaneously drive the respective lifting pins 52 as Group 1A. On the other hand, when lifting or lowering the second substrate G2R, the control unit 9 can control the drive units 53 of "Drive Unit_11" and "Drive Unit_12" to simultaneously drive the respective lifting pins 52. In addition, the control unit 9 can control the drive units 53 of "Drive Unit_13" and "Drive Unit_14" to simultaneously drive the respective lifting pins 52. Similarly, the control unit 9 can perform control on the drive units 53 of "Drive Unit_15" and "Drive Unit_16", control on the drive units 53 of "Drive Unit_17" and "Drive Unit_18", and control on the drive units 53 of "Drive Unit_19" and "Drive Unit_20". In addition, "Drive Unit_11" and "Drive Unit_12" are grouped together as Group 1B. "Drive Unit_13" and "Drive Unit_14" are grouped together as Group 2B. "Drive Unit_15" and "Drive Unit_16" are grouped together as Group 3B. "Drive Unit_17" and "Drive Unit_18" are grouped together as Group 4B. "Drive Unit_19" and "Drive Unit_20" are grouped together as Group 5B. In this way, the control unit 9 can drive by changing the group of the lifting pins 52 used for the lifting (support) of the second substrate G2 for each second substrate G2. As a result, the second substrate G2L and the second substrate G2R can be lifted independently of each other and in different groups. In addition, different conditions can be set for each group, such as the height and speed of the lifting pins 52 when protruding and retracting.

[0049] As Figure 9 shown, when lifting or lowering the second substrate G2L and the second substrate G2R, the control unit 9 can control the drive units 53 of "Drive Unit_01" to "Drive Unit_20" to individually drive the respective lifting pins 52.

[0050] In the substrate processing apparatus 10 having the above structure, when processing the first substrate G1 and the second substrate G2, by replacing between the first stage 1 for the first substrate G1 and the second stage 2 for the second substrate G2, the processing can be executed using one substrate processing apparatus 10. In addition, when processing two second substrates G2, when it is necessary to lift or lower each second substrate G2, by the control of the above control unit 9, the lifting or lowering of each second substrate G2 can be executed independently. In addition, when processing two second substrates G2, when it is necessary to perform more detailed lifting grouping, by the control of the above control unit 9, the lifting or lowering of each second substrate G2 can be executed independently. As a result, for example, poor electrostatic adsorption states can be eliminated. In addition, regarding the grouping, it is not limited to the grouping of the present embodiment.

[0051] As described above, the preferred embodiments of the present disclosure have been illustrated. However, the present disclosure is not limited to the above-described embodiments, and various modifications and changes can be made within the scope of its gist.

Claims

1. A substrate processing device, wherein: The substrate processing device comprises: A mounting table having a mounting surface and a plurality of through holes, the mounting surface selectively mounting a first substrate or two second substrates whose areas when viewed from above are smaller than the areas when viewed from above of the first substrate, the plurality of through holes penetrating in the vertical direction at positions that do not overlap with a bisector that bisects a long side of the mounting surface in a top view and opening on the mounting surface; a processing chamber in which the first substrate or each of the second substrates on the mounting table is processed; a driving mechanism including a plurality of lifting pins and a driving unit, wherein the plurality of lifting pins can move in the up-down direction relative to the mounting table and are inserted into the through holes, wherein when the first substrate is mounted on the mounting surface, the plurality of lifting pins can support the first substrate from the lower surface side, and when two second substrates are mounted on the mounting surface, the plurality of lifting pins can independently support each second substrate from the lower surface side, and the driving unit drives each lifting pin in the up-down direction; as well as a control unit that controls the driving unit, A plurality of driving through holes for the driving mechanism to penetrate are provided at the bottom of the processing chamber. The plurality of driving through holes overlap with the plurality of through holes in a plan view.

2. The substrate processing apparatus according to claim 1, wherein: The plurality of through holes are arranged symmetrically with respect to the bisector.

3. The substrate processing apparatus according to claim 1, wherein: The mounting table has an electrostatic adsorption portion, which can use electrostatic force to adsorb the first substrate when the first substrate is mounted on the mounting surface, and can use electrostatic force to adsorb the second substrates when two second substrates are mounted on the mounting surface.

4. The substrate processing apparatus according to claim 3, wherein: The substrate processing apparatus includes a monitoring unit that monitors an adsorption state at the electrostatic adsorption unit.

5. The substrate processing apparatus according to claim 1, wherein: The mounting table has a flow path for a coolant to pass through, and when the first substrate is mounted on the mounting surface, the coolant cools the first substrate, and when two second substrates are mounted on the mounting surface, the coolant cools the second substrates.

6. A substrate processing device, wherein: The substrate processing device comprises: A first mounting table having a first mounting surface and a plurality of first through holes, the first mounting surface mounting a first substrate, the plurality of first through holes penetrating in the up-down direction at positions not overlapping with a bisector that bisects a long side of the first substrate in a plan view when the first substrate is mounted on the first mounting surface and opening on the first mounting surface; A second mounting table having a second mounting surface and a plurality of second through holes, the second mounting surface being for mounting two second substrates whose areas when viewed from above are smaller than those of the first substrate when viewed from above, the plurality of second through holes penetrating in the up-down direction at positions not overlapping with portions between the two second substrates when viewed from above in a state where the two second substrates are placed side by side on the second mounting surface and opening on the second mounting surface; a support portion that supports the first mounting table and the second mounting table in a manner that allows the first mounting table and the second mounting table to be exchanged between the first mounting table and the second mounting table; a processing chamber in which the first substrate on the first stage is processed when the first stage is supported by the support portion, and in which the second substrates on the second stage are processed when the second stage is supported by the support portion; a driving mechanism including a plurality of lifting pins and a driving unit, wherein the plurality of lifting pins can move in the up-down direction relative to the supporting unit, wherein in the first state, the plurality of lifting pins can be inserted into the first through-holes and support the first substrate from the lower surface side, and in the second state, the plurality of lifting pins can be inserted into the second through-holes and support the second substrates independently from the lower surface side, and the driving unit drives the lifting pins in the up-down direction; as well as a control unit that controls the driving unit, A plurality of driving through holes for the driving mechanism to penetrate are provided at the bottom of the processing chamber. The plurality of driving through holes overlap with the plurality of first through holes in the first state, and overlap with the plurality of second through holes in the second state when viewed from above.

7. The substrate processing apparatus according to claim 6, wherein: The control unit can control the driving unit to drive the lift pins individually.

8. The substrate processing apparatus according to claim 6, wherein: The control unit can control the driving unit to drive the lift pins simultaneously in the first state.

9. The substrate processing apparatus according to claim 6, wherein: The control unit can control the driving unit to simultaneously drive the lift pins for each of the second substrates in the second state.

10. The substrate processing apparatus according to claim 6, wherein: The control unit can control the driving unit to drive the driving unit by changing the group of the lift pins used for supporting the second substrate for each second substrate in the second state.

11. The substrate processing apparatus according to claim 6, wherein: The plurality of first through holes are arranged symmetrically with respect to the bisector.

12. The substrate processing apparatus according to claim 6, wherein: The plurality of second through holes are arranged symmetrically with respect to a portion between the two second substrates.

13. The substrate processing apparatus according to claim 12, wherein: The plurality of second through holes are arranged symmetrically with respect to a center line of the second substrate for each of the second substrates.

14. The substrate processing apparatus according to claim 6, wherein: When the first mounting table and the second mounting table are overlapped in a plan view, the plurality of first through holes overlap with the plurality of second through holes.

15. The substrate processing apparatus according to claim 6, wherein: The second mounting surface is divided into a surface on which one of the two second substrates is mounted and a surface on which the other second substrate is mounted.

16. The substrate processing apparatus according to claim 6, wherein: The first mounting table has a first electrostatic adsorption portion capable of adsorbing the first substrate on the first mounting surface by electrostatic force. The second mounting table includes a second electrostatic attraction portion capable of attracting each of the second substrates on the second mounting surface by electrostatic force.

17. The substrate processing apparatus according to claim 16, wherein: The second mounting surface is divided into a surface for mounting one of the two second substrates and a surface for mounting the other second substrate. The second mounting table can independently perform adsorption using electrostatic force on the surface on which the one second substrate is mounted and adsorption using electrostatic force on the surface on which the other second substrate is mounted.

18. The substrate processing apparatus according to claim 16, wherein: The substrate processing apparatus includes a voltage applying unit that applies a voltage in common to the first electrostatic attraction unit and at least one of the second electrostatic attraction units.

19. The substrate processing apparatus according to claim 16, wherein: The substrate processing apparatus includes a monitoring unit that monitors the adsorption states of the first electrostatic adsorption unit and the second electrostatic adsorption unit.

20. The substrate processing apparatus according to claim 19, wherein: The monitoring unit monitors the adsorption state based on a current value.

21. The substrate processing apparatus according to claim 6, wherein: The first mounting table has a first flow path through which a refrigerant for cooling the first substrate on the first mounting surface passes. The second mounting table independently includes a second flow path through which a refrigerant for cooling one second substrate on the second mounting surface passes, and a second flow path through which a refrigerant for cooling the other second substrate passes.

22. The substrate processing apparatus according to claim 21, wherein: The substrate processing apparatus includes a coolant supply unit configured to supply a coolant in common to the first flow path and at least one of the second flow paths.

23. The substrate processing apparatus according to claim 21, wherein: The substrate processing apparatus includes a monitoring unit configured to monitor a flow state of the refrigerant in the first flow path and the second flow path.

24. The substrate processing apparatus according to claim 23, wherein: The monitoring unit monitors the passage state based on at least one of a pressure of the refrigerant and a flow rate of the refrigerant.

25. A substrate processing method using a substrate processing device, wherein: The substrate processing device comprises: A mounting table having a mounting surface and a plurality of through holes, the mounting surface selectively mounting a first substrate or two second substrates whose areas when viewed from above are smaller than the areas when viewed from above of the first substrate, the plurality of through holes penetrating in the vertical direction at positions that do not overlap with a bisector that bisects a long side of the mounting surface in a top view and opening on the mounting surface; a processing chamber in which the first substrate or each of the second substrates on the mounting table is processed; a driving mechanism including a plurality of lifting pins and a driving unit, wherein the plurality of lifting pins can move in the up-down direction relative to the mounting table and are inserted into the through holes, wherein when the first substrate is mounted on the mounting table, the plurality of lifting pins can support the first substrate from the lower surface side, and when two second substrates are mounted on the mounting table, the plurality of lifting pins can independently support each second substrate from the lower surface side, and the driving unit drives each lifting pin in the up-down direction; as well as a control unit that controls the driving unit, A plurality of driving through holes for the driving mechanism to penetrate are provided at the bottom of the processing chamber. The plurality of driving through holes overlap with the plurality of through holes in a plan view.

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