Active heat dissipation power module

Abstract

An active heat dissipation power module comprises a lower layer circuit board which is composed of a lower layer circuit board bottom layer circuit layer, a lower layer circuit board ceramic substrate layer and a lower layer circuit board top layer circuit layer. The circuit board also comprises a group of two or more than two MOS tubes or IGBTs, and the group of two or more than two MOS tubes or IGBTs are welded on the bottom circuit layer of the lower circuit board. The upper-layer circuit board is composed of an upper-layer circuit board circuit layer and an upper-layer circuit board ceramic substrate layer; the circuit board further comprises two or more pairs of P-type and N-type semiconductor pairs, and the two ends of the P-type and N-type semiconductors are welded to the top circuit layer of the lower circuit board and the circuit layer of the upper circuit board respectively. The semiconductor refrigeration device is integrated on the power module of a group of MOS (Metal Oxide Semiconductor) tubes or IGBTs (Insulated Gate Bipolar Translator), so that heat generated when the group of MOS tubes or IGBTs works can be actively dissipated, the working efficiency and the power of the power module are improved, and the working duration and the reliability of the group of MOS tubes or IGBTs are increased.

Description

Technical Field

[0001] The invention relates to intelligent module packaging for electronic products, which integrates a semiconductor refrigeration device on a group of MOS tubes or IGBT power modules to increase module efficiency and power, and involves circuit board technology and semiconductor refrigeration devices. Background Art

[0002] The circuit board consists of a circuit layer and a substrate layer; different types are produced by different substrate layer materials and different number of layers. Ceramic-based circuit boards refer to special process boards in which copper foil is directly bonded to the surface of a ceramic substrate at high temperature. The resulting composite substrate has excellent electrical insulation properties and high thermal conductivity. It includes a ceramic base layer and a circuit layer. Ceramic-based circuit boards have better thermal conductivity than the commonly used ordinary PCBs.

[0003] Semiconductor refrigeration, also known as electronic refrigeration or thermoelectric refrigeration, is a discipline developed in the 1950s that is on the edge of refrigeration technology and semiconductor technology. It uses PN junctions composed of special semiconductor materials to form thermocouple pairs to achieve cooling effects.

[0004] One of the main components of electronic products is the chip, which is packaged from a wafer. The existing chip packaging process mainly uses a bonding process that uses metal wires to weld and connect the pads on the wafer and the chip pins.

[0005] Power tubes are widely used in electronic products. Commonly used ones are MOS tubes and IGBTs. MOS tubes are also called field effect transistors. They have many uses and are mainly used as switching components. IGBTs are another type of power tube, also called insulated gate bipolar thyristors, which are also mainly used as switching components.

[0006] MOS tubes and IGBTs are widely used in electronic products such as frequency conversion appliances, power supplies, motor control and inverters. In practical applications, MOS tubes are generally used for products with low working currents, and IGBTs are used for products with large working currents. MOS tubes and IGBTs will generate heat during the controlled switching process, which is detrimental to the products and components themselves. Excessive temperature will reduce the efficiency of MOS tubes and IGBTs, and will also reduce the working life of MOS tubes and IGBTs. Summary of the invention

[0007] In view of the above problems, the present invention aims to provide an active heat dissipation power module, which integrates a semiconductor refrigeration device on a power module ceramic backplane of a group of MOS tubes or IGBTs to achieve active heat dissipation of a group of MOS tubes or IGBTs, so as to increase the module power; at the same time, increase the module service life.

[0008] To achieve this technical objective, the solution of the present invention is as follows: An active heat dissipation power module includes a lower circuit board, which is composed of a lower circuit board bottom layer circuit layer, a lower circuit board ceramic substrate layer, and a lower circuit board top layer circuit layer; it also includes a group of two or more MOS tubes or IGBTs, and a group of two or more MOS tubes or IGBTs are welded on the lower circuit board bottom layer circuit layer; it further includes an upper circuit board, which is composed of an upper circuit board bottom layer circuit layer and an upper circuit board ceramic substrate layer; it also includes a group of two or more pairs of P-type and N-type semiconductor pairs, and both ends of the P-type and N-type semiconductors are respectively welded on the lower circuit board top layer circuit layer and the upper circuit board bottom layer circuit layer. By supplying power to a series-connected group of P-type and N-type semiconductor pairs, refrigeration on the lower circuit board side can be achieved, thereby achieving active heat dissipation of the power module.

[0009] Preferably, it further includes a group of two or more metal pins, which are welded on the lower circuit board bottom layer circuit layer and are correspondingly connected to a group of two or more MOS tubes or IGBTs. A group of two or more MOS tubes or IGBTs are connected to the corresponding pins in a group of two or more metal pins.

[0010] Preferably, it further includes a temperature sensor, which is welded on the lower circuit board bottom layer circuit layer and is connected to the corresponding pins in a group of two or more metal pins. In general products, a thermistor is selected as the temperature sensor.

[0011] A group of MOS tubes or IGBTs adopt encapsulated chips or wafers. When using wafers, a group of MOS tubes or IGBT wafers are directly bonded on the lower circuit board bottom layer circuit layer; the wafers are covered with glue for protection.

[0012] The beneficial effects of this technical solution are: integrating a semiconductor refrigeration device on a power module of a group of MOS tubes or IGBTs realizes active heat dissipation of the power module of a group of MOS tubes or IGBTs, improves the working efficiency and power of the power module, and increases the working life and reliability. Description of the Drawings

[0013] Figure 1 It is a schematic cross-sectional view of the power module of the first specific embodiment of the present invention.

[0014] Figure 2 It is a schematic cross-sectional view of the power module of the second specific embodiment of the present invention..

[0015] Figure 3 It is a schematic bottom view of the second specific embodiment. Embodiment

[0016] The present invention will be further described in detail below with reference to the drawings and specific embodiments.

[0017] As shown Figure 1 in the figure, it is a schematic cross-sectional view of a power module according to the first specific embodiment of the present invention. An active heat dissipation power module includes a lower circuit board 1, and the lower circuit board 1 is composed of a lower circuit board bottom layer circuit layer 11, a lower circuit board ceramic substrate layer 12, and a lower circuit board top layer circuit layer 13; it also includes a group of two MOS transistors or IGBTs 21 and 22, and the group of two MOS transistors or IGBTs 21 and 22 are soldered on the lower circuit board bottom layer circuit layer 11; it also includes an upper circuit board 3, and the upper circuit board 3 is composed of an upper circuit board bottom layer circuit layer 31 and an upper circuit board ceramic substrate layer 32; it also includes two pairs or more than two pairs of a group of P-type and N-type semiconductor pairs 4, and both ends of the P-type and N-type semiconductors are soldered on the lower circuit board top layer circuit layer 13 and the upper circuit board bottom layer circuit layer 31 respectively; in the cross-sectional view, 411, 421, and 431 are N-type semiconductors, and 412, 422, and 432 are P-type semiconductors, and are serially conducted by the wires of the lower circuit board top layer circuit layer 13 and the wires 131, 132, 133, 312, and 313 of the upper circuit board bottom layer circuit layer 31; the wires 311 and 314 in the upper circuit board bottom layer circuit layer 31 are the two power supply poles.

[0018] As shown Figure 2 in the figure, it is a schematic cross-sectional view of a power module according to the second specific embodiment of the present invention. On the basis of the first embodiment, it further includes two or more than two of a group of metal pins, and the metal pins 511 and 514 are soldered on the lower circuit board bottom layer circuit layer 11, and a group of two or more than two MOS transistors or IGBTs 21 and 22 are connected to the corresponding pins in the group of two or more than two metal pins.

[0019] As shown Figure 3 in the figure, it is a schematic bottom view of the second specific embodiment. A group of metal pins 511-518 are soldered on the lower circuit board bottom layer circuit layer 11, MOS transistors or IGBTs 21 and 22 are also soldered, and a thermistor 6 is also soldered. The MOS transistors or IGBTs 21 and 22 are connected to the corresponding pins in the group of metal pins, and the thermistor 6 is connected to the corresponding pins in the group of metal pins. Through the group of metal pins 511-518, the input and output of the power module signals are realized.

[0020] The above are only the preferred embodiments of the present invention and are not intended to limit the present invention. Any minor modifications, equivalent replacements, and improvements made to the above embodiments based on the technical essence of the present invention should be included in the protection scope of the technical solution of the present invention.

Claims

1. An active heat dissipation power module, characterized in that: It includes a lower-layer circuit board, which is composed of a lower-layer circuit board bottom circuit layer, a lower-layer circuit board ceramic substrate layer, and a lower-layer circuit board top circuit layer; it also includes a group of two or more MOS transistors or IGBTs, and the group of two or more MOS transistors or IGBTs are soldered on the lower-layer circuit board bottom circuit layer; it further includes an upper-layer circuit board, which is composed of an upper-layer circuit board bottom circuit layer and an upper-layer circuit board ceramic substrate layer; it also includes a group of two or more pairs of P-type and N-type semiconductor pairs, and the two ends of the P-type and N-type semiconductors are respectively soldered on the lower-layer circuit board top circuit layer and the upper-layer circuit board bottom circuit layer.

2. The active heat dissipation power module according to claim 1, characterized in that: It also includes a group of two or more metal pins, which are soldered on the lower-layer circuit board bottom circuit layer, and a group of two or more MOS transistors or IGBTs are connected to the corresponding pins in the group of two or more metal pins.

3. The active heat dissipation power module according to claim 1, characterized in that: It also includes a temperature sensor, which is soldered on the lower-layer circuit board bottom circuit layer and is connected to the corresponding pins in the group of two or more metal pins.

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