Shower head and substrate processing apparatus including same

Abstract

A showerhead that injects a processing gas for processing a substrate into a processing space of a processing chamber, the showerhead including: a showerhead plate in which a plurality of injection holes are formed, the showerhead plate configured to inject the processing gas into the processing space through the plurality of injection holes; a lower plate mounted on an upper side of the spray plate, the lower plate having formed therein a plurality of spray flow paths connected to the plurality of spray holes; an upper plate mounted on an upper side of the lower plate, the upper plate configured to inject a processing gas to the plurality of injection flow paths; and a planar heating element configured to heat the processing gas jetted through the jet plate.

Description

Cross - reference to related applications

[0001] This application claims priority to Korean Patent Application No. 10 - 2023 - 0193573, filed with the Korean Intellectual Property Office on December 27, 2023, the disclosure of which is incorporated herein by reference in its entirety. Technical field

[0002] The present disclosure relates to a showerhead and a substrate processing apparatus including the showerhead. Background art

[0003] When forming a predetermined pattern on a substrate, various unit processes such as a deposition process, a lithography process, and an etching process can be continuously performed in a facility for a semiconductor manufacturing process.

[0004] In these processes, the etching process can be a process of removing a film formed on a substrate, and the etching process can be classified into a wet etching process or a dry etching process according to the processing method.

[0005] In these processes, in the dry etching process, a film formed on a substrate can be etched using plasma in a processing chamber, and a showerhead can be used to supply a processing gas for etching the substrate (e.g., a wafer).

[0006] The showerhead may include a heating member and a cooling member so that the substrate can maintain a process temperature during the etching process. Among these members, the heating member may be located outside the electrostatic chuck, and the cooling member may be formed inside the heating member with respect to the electrostatic chuck. Due to such a structure, it may not be possible to maintain a uniform temperature distribution of the showerhead. Summary of the invention

[0007] One aspect of the present invention provides a showerhead and a substrate processing apparatus including the showerhead, the showerhead being capable of maintaining a uniform temperature distribution, having excellent heat dissipation characteristics and thermal conductivity.

[0008] According to an aspect of the present disclosure, there is provided a showerhead for injecting a processing gas for processing a substrate into a processing space of a processing chamber, the showerhead including: a shower plate in which a plurality of spray holes are formed, the shower plate being configured to inject the processing gas into the processing space through the plurality of spray holes; a lower plate mounted on an upper side of the shower plate, the lower plate having a plurality of injection flow paths connected to the plurality of spray holes; an upper plate mounted on an upper side of the lower plate, the upper plate being configured to inject the processing gas into the plurality of injection flow paths; and a planar heating element configured to heat the processing gas injected through the shower plate.

[0009] The planar heating element may be a material in which graphene and graphite particles are mixed at a weight ratio of 1:2 to 1:8 and the size ratio of graphene to graphite particles may be 1:30 to 1:2000.

[0010] The thickness of the planar heating element can be greater than or equal to 0.1 mm and less than or equal to 0.2 mm.

[0011] The planar heating element can be disposed in at least one of the space between the nozzle plate and the lower plate and the space between the lower plate and the upper plate.

[0012] The planar heating element can have a shape corresponding to the shape of the surface in contact with the nozzle plate and the lower plate, or a shape corresponding to the shape of the surface in contact with the lower plate and the upper plate.

[0013] A plurality of through holes can be formed in the planar heating element, and the number of the plurality of through holes can be formed to correspond to the number of the plurality of nozzle holes or the plurality of injection flow paths respectively.

[0014] The nozzle can further include a power source configured to cause the planar heating element to operate as a heat dissipating element by supplying power to the planar heating element.

[0015] The nozzle can further include at least one temperature measuring unit passing through the lower plate and the upper plate, the at least one temperature measuring unit being mounted on the nozzle plate and configured to measure the temperature of the nozzle plate.

[0016] The nozzle can further include a controller configured to control the temperature of the planar heating element through the power source based on the temperature of the nozzle plate measured by the temperature measuring unit.

[0017] The controller can be configured to control the power source to keep the temperature of the planar heating element uniform.

[0018] The planar heating element can be configured to operate as a heat conductor when the power supplied by the power source is cut off.

[0019] A cooling flow path can be formed in the upper plate, and a refrigerant flows through the cooling flow path to prevent the nozzle plate from being heated to a temperature higher than or equal to the limit temperature.

[0020] A single flow path can be formed in a curved shape along the edge region of the upper plate; can be formed in a circular shape at the boundary between the edge region and the middle region of the upper plate; can be formed in a curved shape along the middle region of the upper plate; can be formed in a circular shape at the boundary between the middle region and the central region of the upper plate; and can be formed in a circular shape in the central region of the upper plate.

[0021] According to another aspect of the present disclosure, there is provided a showerhead for injecting a processing gas for processing a substrate into a processing space of a processing chamber. The showerhead includes: a shower plate in which a plurality of spray holes are formed, and the shower plate is configured to inject the processing gas into the processing space through the plurality of spray holes; a lower plate mounted on the upper side of the shower plate, and a plurality of injection flow paths connected to the plurality of spray holes are formed in the lower plate; an upper plate mounted on the upper side of the lower plate, and the upper plate is configured to inject the processing gas into the plurality of injection flow paths; a planar heating element configured to heat the processing gas injected through the shower plate; a power supply configured to operate the planar heating element as a heat dissipation element by supplying power to the planar heating element; at least one temperature measurement unit passing through the lower plate and the upper plate, the at least one temperature measurement unit is mounted on the shower plate, and the at least one temperature measurement unit is configured to measure the temperature of the shower plate; and a controller configured to control the temperature of the planar heating element through the power supply based on the temperature of the shower plate measured by the temperature measurement unit. The planar heating element may have a shape corresponding to the shape of the surface in contact with the shower plate and the lower plate, or a shape corresponding to the shape of the surface in contact with the lower plate and the upper plate.

[0022] The planar heating element may be a material in which graphene and graphite particles are mixed at a weight ratio of 1:2 to 1:8, and the size ratio of graphene to graphite particles may be 1:30 to 1:2000.

[0023] The thickness of the planar heating element may be greater than or equal to 0.1 mm and less than or equal to 0.2 mm.

[0024] The planar heating element may be configured to operate as a heat conductor when the power supplied by the power supply is cut off.

[0025] According to another aspect of the present disclosure, a substrate processing apparatus is provided, including: a processing chamber in which a processing space for processing a substrate is formed; a showerhead installed on an upper side of the processing space in the processing chamber, the showerhead being configured to inject a processing gas for processing the substrate into the processing space; a substrate support installed on a lower side of the processing space in the processing chamber, vertically opposite to the showerhead, and a substrate is installed on the substrate support. The showerhead may include: a shower plate in which a plurality of spray holes are formed, the shower plate being configured to inject the processing gas into the processing space through the plurality of spray holes; a lower plate installed on an upper side of the shower plate, and a plurality of injection flow paths connected to the plurality of spray holes are formed in the lower plate; an upper plate installed on an upper side of the lower plate, the upper plate being configured to inject the processing gas into the plurality of injection flow paths; and a planar heating element configured to heat the processing gas injected through the shower plate. The planar heating element may be graphene or a graphene hybrid material, and the graphene hybrid material may be a material in which graphene and graphite particles are mixed at a weight ratio of 1:2 to 1:8 and the size ratio of graphene to graphite particles may be 1:30 to 1:2000. The planar heating element may be disposed in at least one of a space between the shower plate and the lower plate and a space between the lower plate and the upper plate.

[0026] According to an aspect of the present disclosure, the uniform temperature distribution of the showerhead can be controlled by the planar heating element instead of a heating member located outside the electrostatic chuck.

[0027] Furthermore, according to an aspect of the present disclosure, by using graphene or a graphene hybrid material, the planar heating element can have excellent heat dissipation characteristics and thermal conductivity. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] According to the following detailed description and in conjunction with the accompanying drawings, the above and other aspects, features, and advantages of the present disclosure will be more clearly understood. In the drawings: Figure 1 A substrate processing apparatus including a showerhead according to an exemplary embodiment of the present disclosure is shown; Figures 2A to 2C A showerhead according to an exemplary embodiment of the present disclosure including planar heating elements disposed at various positions is shown; Figure 3 A planar heating element according to an exemplary embodiment of the present disclosure is shown; Figure 4 A cooling flow path disposed in the upper plate according to an exemplary embodiment of the present disclosure is shown; Figure 5 A temperature measurement unit, a power supply, and a controller included in a showerhead according to an exemplary embodiment of the present disclosure are shown. DETAILED DESCRIPTION

[0029] In the following, specific exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. The following detailed description is provided to assist in a comprehensive understanding of the methods, apparatuses, and / or systems described in this specification. However, this detailed description is for illustrative purposes only, and the present disclosure is not limited thereto.

[0030] When describing the exemplary embodiments of the present disclosure, the detailed description of the known technology related to the present disclosure may be omitted when it is determined that it may unnecessarily obscure the gist of the present disclosure. In addition, the terms to be described later are defined in consideration of the functions in the present disclosure, and they may vary according to the intention or habit of the user or operator. Therefore, the definitions of these terms should be based on the content of this specification. The terms used herein are only for describing specific exemplary embodiments and should not be construed as limiting the exemplary embodiments. As used herein, unless the context clearly indicates otherwise, the singular forms "a", "an", "the", and "said" are also intended to include the plural forms. As used herein, the term "and / or" includes any one of the associated listed items and any combination of any two or more of them. It will also be understood that the terms "comprises" and / or "comprising", when used in this specification, specify the presence of the stated features, integers, steps, operations, elements, components, or combinations thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or combinations thereof.

[0031] Figure 1 A substrate processing apparatus including a showerhead according to an exemplary embodiment of the present disclosure is shown.

[0032] Referring to Figure 1 , the substrate processing apparatus 1 may include a processing chamber 20, a substrate support 30, a first gas supply unit 40, a plasma generation unit 50, a second gas supply unit 60, a liner (or wall liner) 70, and a baffle unit 80.

[0033] The substrate processing system 1 of the present disclosure may be a system for processing a substrate W using a dry etching process, and may process the substrate W using, for example, a plasma process.

[0034] As Figure 1 shown, the processing chamber 20 may have a processing space A in which the substrate W is processed, and thus a plasma process may be performed in the processing space A.

[0035] In addition, an exhaust hole 21 may be formed in the lower part of the processing chamber 20. The exhaust hole 21 may be connected to an exhaust pipeline 23 on which a pump 22 is installed, and the exhaust hole 21 may discharge reaction by-products generated during the plasma process and gases remaining in the processing chamber 20 to the outside of the processing chamber 20 through the exhaust pipeline 23. In this case, the processing space A of the processing chamber 20 may be decompressed to a predetermined pressure.

[0036] In addition, a door 24 can be formed on the sidewall of the processing chamber 20. The door 24 can serve as a passage for the substrate W to enter and exit the processing space A of the processing chamber 20, and can be configured to be opened and closed by a door assembly 25.

[0037] For example, the door assembly 25 can include a door body 25a and a door driver 25b. More specifically, the door body 25a can be formed at a position on the outer wall of the processing chamber 20 corresponding to the door 24. The door body 25a can be moved in the vertical direction (the height direction of the processing chamber 20) by the door driver 25b. According to precedent, the door driver 25b for driving the door body 25a can be a combination of a motor and a gear, or can be any type of driving device capable of reciprocating the door body 25a, such as a cylinder, an electric cylinder, and a hydraulic cylinder.

[0038] The substrate support 30 can be installed on the lower side of the processing space A in the processing chamber 20 to be vertically opposite to the showerhead 100 (to be described below), and the substrate W can be installed on the upper surface of the substrate support 30. The substrate support 30 can support the substrate W using electrostatic force so as to effectively support the substrate W in the processing space A in a vacuum environment. However, the method by which the substrate support 30 supports the substrate W is not limited to this, and can also be various methods such as mechanical clamping and vacuum.

[0039] As described in the present disclosure, when using electrostatic force to support the substrate W, the substrate support 30 can include a base 31 and an electrostatic chuck 32.

[0040] For example, the electrostatic chuck 32 can support the substrate W installed on its upper surface using electrostatic force, and can be formed of a ceramic material, and thus can be coupled to the base 31 to be fixed to the base 31.

[0041] In addition, a driving member (not shown) can be used to install the electrostatic chuck 32 to be movable in the vertical direction (the height direction of the processing chamber 20) in the processing chamber 20. As described, when the electrostatic chuck 32 is formed to be movable in the vertical direction, the substrate W can be positioned in a region where a more uniform plasma distribution is exhibited.

[0042] In addition, a ring assembly 33 having an annular shape can be formed around the edge of the electrostatic chuck 32. The ring assembly 33 having an annular shape can be configured to support the edge region of the substrate W.

[0043] The ring assembly 33 may include a focusing ring 33a and an insulating ring 33b. For example, the focusing ring 33a may be formed inside the insulating ring 33b and may be formed to surround the electrostatic chuck 32. The focusing ring 33a may be formed of a silicon material and may concentrate plasma on the substrate W. In addition, the insulating ring 33b may be formed to surround the focusing ring 33a on the outside of the focusing ring 33a. The insulating ring 33b may be formed of a quartz material.

[0044] In addition, the ring assembly 33 may further include an edge ring formed to be in close contact with the edge of the focusing ring 33a. The edge ring is formed to prevent the side surface of the electrostatic chuck 32 from being damaged by plasma.

[0045] The first gas supply unit 40 may supply gas to remove foreign substances remaining on the upper part of the ring assembly 33 or the edge portion of the electrostatic chuck 32. The first gas supply unit 40 may include a first gas supply source 41 and a first gas supply pipeline 42.

[0046] The first gas supply source 41 may supply nitrogen gas N2 as the gas for removing foreign substances. However, the present disclosure is not limited thereto, and the first gas supply source 41 may also supply other gases, cleaning agents, etc.

[0047] The first gas supply pipeline 42 may be formed between the electrostatic chuck 32 and the ring assembly 33. For example, the first gas supply pipeline 42 may be formed to connect between the electrostatic chuck 32 and the focusing ring 33a. In addition, the first gas supply pipeline 42 may be disposed inside the focusing ring 33a and formed in a bent shape such that the first gas supply pipeline 42 can connect between the electrostatic chuck 32 and the focusing ring 33a.

[0048] The heating member 34 and the cooling member 35 may be configured such that when an etching process is performed in the processing space A of the processing chamber 20, the substrate W can maintain the process temperature. For this purpose, the heating member 34 may be provided as a heating wire, and the cooling member 35 may be provided as a cooling flow path through which a refrigerant flows.

[0049] The heating member 34 and the cooling member 35 may be installed inside the substrate support 30 to maintain the process temperature of the substrate W. For example, the heating member 34 may be installed inside the electrostatic chuck 32, and the cooling member 35 may be installed inside the base 31.

[0050] The plasma generation unit 50 may generate plasma from the gas remaining in the discharge space. Here, the discharge space may refer to the space between the substrate support 30 and the shower head 100 in the processing space A of the processing chamber 20.

[0051] The plasma generating unit 50 may generate plasma in the exhaust space in the processing space A of the process chamber 20 using a capacitively coupled plasma (CCP) source. In this case, the plasma generating unit 50 may use the shower head 100 as an upper electrode and the electrostatic chuck 32 of the substrate support 30 as a lower electrode.

[0052] However, the configuration of the plasma generating unit 50 is not limited thereto. When plasma is generated in the exhaust space using an inductively coupled plasma (ICP) source, an antenna (not shown) installed at an upper portion of the process chamber 20 may serve as an upper electrode and the electrostatic chuck 32 may serve as a lower electrode.

[0053] More specifically, the plasma generating unit 50 may include an upper electrode, a lower electrode, an upper power source 51, and a lower power source 53. Also, as described above, when the plasma generating unit 50 uses a CCP source, the showerhead 100 may serve as an upper electrode, and the electrostatic chuck 32 may serve as a lower electrode.

[0054] The showerhead 100 used as an upper electrode may be installed in the processing space A of the processing chamber 100, vertically opposite to the electrostatic chuck 32 used as a lower electrode. The showerhead 100 may include a plurality of injection holes H for injecting a processing gas into the processing space A, and may be formed to have a diameter greater than that of the electrostatic chuck 32.

[0055] The showerhead 100 may include a temperature measuring unit (see Figures 2A to 2C 140 in the figure), and may be formed of a silicon material or a metal material.

[0056] The upper power source 51 can apply power to the upper electrode, i.e., the showerhead 100, and can be used to control the characteristics of the plasma. For example, the upper power source 51 can be provided to adjust the ion bombardment energy. In addition, a first impedance matching circuit (not shown) can be provided on the first transmission line 52 connecting the upper power source 51 to the showerhead 100 to perform impedance matching.

[0057] In addition, the lower power source 53 may apply power to the lower electrode (ie, the electrostatic chuck 32 ), and may be used together with the upper power source 51 as a plasma source to generate plasma or may be used together with the upper power source 51 to control characteristics of plasma.

[0058] The second gas supply unit 60 may supply the process gas to the processing space A of the process chamber 20 through the shower head 100 , and may include a second gas supply source 61 and a second gas supply line 62 .

[0059] More specifically, the second gas supply source 61 may supply an etching gas for processing the substrate W as a process gas, and may supply a gas including a fluorine component (eg, SF 6 , CF 4 , etc.) as an etching gas.

[0060] In addition, a single second gas supply source 61 may be provided to supply an etching gas to the showerhead 100. However, the present disclosure is not limited thereto, and a plurality of second gas supply sources 61 may be provided to supply a processing gas to the showerhead 100.

[0061] A gasket 70 may be provided to protect the inner surface of the processing chamber 20 from arc discharges generated during the process of exciting the processing gas and impurities generated during the substrate processing process. The gasket 70 may be formed in a cylindrical shape, wherein its upper and lower portions are open along the inner surface of the processing chamber 20.

[0062] In addition, the gasket 70 may include a support ring 71 at its upper portion. The support ring 71 may be formed to protrude in an outward direction from the upper portion of the gasket 70 (i.e., the direction of the outer surface of the processing chamber 20), and may be provided at the upper end of the processing chamber 20 to support the gasket 70.

[0063] A baffle unit 80 may be used to discharge process by-products such as plasma and unreacted gases. The baffle unit 80 may be installed between the inner wall of the processing chamber 20 and the outer surface of the substrate support 30.

[0064] More specifically, the baffle unit 80 may be formed in an annular shape, and a plurality of through-holes passing through the baffle unit 80 in the vertical direction (the height direction of the processing chamber 20) may be formed. The baffle unit 80 may control the flow of the processing gas according to the number and shape of the through-holes.

[0065] The showerhead 100 included in the substrate processing apparatus 1 described above will be described in detail below.

[0066] Figures 2A to 2C A showerhead including planar heating elements disposed at various positions according to an exemplary embodiment of the present disclosure is shown.

[0067] That is, Figure 2A Planar heating elements 150 disposed between the lower plate 120 and the upper plate 130 and between the spray plate 110 and the lower plate 120 are shown, Figure 2B Planar heating elements 150 disposed between the lower plate 120 and the upper plate 130 are shown, and Figure 2C Planar heating elements 150 disposed between the spray plate 110 and the lower plate 120 are shown. Figures 2A to 2C Among them, except for the arrangement positions of the planar heating elements 150, other structures may be the same. The following will be based on Figure 2A be described.

[0068] As Figure 2A shown, the showerhead 100 may include a spray plate 110, a lower plate 120, an upper plate 130, a temperature measurement unit 140, and planar heating elements 150.

[0069] The showerhead 110 can directly inject the processing gas for processing the substrate W into the processing space A of the processing chamber 20. To this end, the lower surface of the showerhead 110 can be formed to be exposed to the processing space A in a vacuum environment.

[0070] More specifically, the showerhead 110 having a disk shape can have a plurality of spray holes 111. The showerhead 110 can be divided into a central region CR, an intermediate region MR, and an edge region ER. In this example, the regions CR, MR, and ER can have the same number of spray holes 111, but can also have different numbers of spray holes 111. In addition, the number of regions into which the showerhead 110 is divided is three, but the present disclosure is not limited thereto. The showerhead 110 can be divided into a large number of regions with different numbers according to process requirements.

[0071] The lower plate 120 can be installed on the upper side of the showerhead 110 and formed in a disk shape (such as the shape of the showerhead 110), so as to form a plurality of injection flow paths 123 connected to the plurality of spray holes 111. The lower plate 120 can include a plate body 121 and a protrusion 122.

[0072] For example, the plate body 121 can have a plurality of injection flow paths 123 connected to the plurality of spray holes 111, and can have an annular protrusion 122 along its outer peripheral surface. The protrusion 122 can be formed to be annular along the outer peripheral surface of the plate body 121 and can be used for the coupling between the lower plate 120 and the upper plate 130 described below.

[0073] In addition, the plurality of injection flow paths 123 of the lower plate 120 and the plurality of spray holes 111 of the showerhead 110 can be connected to each other. To this end, the number of the plurality of injection flow paths 123 can be formed to correspond to the number of the plurality of spray holes 111 respectively. In this case, the plurality of injection flow paths 123 can be formed in a shape with a gradually decreasing width in the downward direction.

[0074] The planar heating element 150 can be disposed between the lower plate 120 and the upper plate 130 and between the showerhead 110 and the lower plate 120 to heat the processing gas injected through the showerhead 110. According to another exemplary embodiment of the present disclosure, as Figure 2B shown, the planar heating element 150 can be disposed between the lower plate 120 and the upper plate 130, or as Figure 2C shown, the planar heating element 150 can be disposed between the showerhead 110 and the lower plate 120.

[0075] Figure 3 A temperature measurement unit, a power supply, and a controller included in the showerhead according to an exemplary embodiment of the present disclosure are shown.

[0076] As Figure 3As shown, the planar heating element 150 may have a shape corresponding to the shape of the surface in contact with the nozzle plate 110 and the lower plate 120, or may have a shape corresponding to the shape of the surface in contact with the lower plate 120 and the upper plate 130. The planar heating element 150 may have a circular shape.

[0077] In addition, a plurality of through-holes 150a may be formed in the planar heating element 150, and the number of the plurality of through-holes 150a may be formed to correspond to the number of the plurality of nozzle holes 111 or the plurality of injection channels 123.

[0078] The planar heating element 150 may be graphene or a graphene composite material. The graphene composite material may be a material in which graphene and graphite particles are mixed at a weight ratio of 1:2 to 1:8 and the size ratio of graphene to graphite particles may be 1:30 to 1:2000.

[0079] That is, graphene or the graphene composite material may have excellent heat dissipation characteristics and excellent thermal conductivity. Such a material can be used to maintain a uniform temperature distribution of the nozzle.

[0080] In addition, the thickness of the planar heating element 150 may be greater than or equal to 0.1 mm and less than or equal to 0.2 mm. That is, when the thickness of the planar heating element 150 is greater than 0.2 mm, the change in the thermal conductivity of the planar heating element 150 may be relatively large. When the thickness of the planar heating element 150 is less than 0.1 mm, the installation or maintenance of the planar heating element 150 may be difficult. Therefore, in the present disclosure, considering the change in the thermal conductivity of the planar heating element 150 and the installation or maintenance, the thickness of the planar heating element 150 may be set to be greater than or equal to 0.1 mm and less than or equal to 0.2 mm.

[0081] The upper plate 130 may be mounted on the planar heating element 150 such that the upper plate 130 is mounted on the upper side of the lower plate 120, and may be used to separately distribute and supply the processing gas introduced from an external source to the plurality of injection channels 123 of the lower plate 120. In addition, a cooling channel 131 may be included in the upper plate 130.

[0082] For example, the cooling channel 131 may be provided as a channel in the upper plate 130 through which cooling water or a cooling fluid flows. The cooling channel 131 can prevent the nozzle plate 110 from being heated to a temperature higher than or equal to the limit temperature.

[0083] Figure 4 A cooling channel provided in the upper plate according to an exemplary embodiment of the present disclosure is shown.

[0084] As Figure 4As shown, the cooling flow path 131 can be configured as a single flow path, and can circulate the refrigerant introduced through the refrigerant inlet 131a, and then discharge the refrigerant through the refrigerant outlet 131b.

[0085] Here, the single flow path 131 can be formed in the edge region ER of the upper plate 130 along the edge region ER to have a curved shape; can be formed at the boundary between the edge region ER and the middle region MR of the upper plate 130 to have a circular shape at this boundary; can be formed in the middle region MR of the upper plate 130 along the middle region MR to have a curved shape; can be formed at the boundary between the middle region MR and the central region CR of the upper plate 130 to have a circular shape at this boundary, and can be formed in the central region CR of the upper plate 130 to have a circular shape.

[0086] Referring again to Figure 2A , the temperature measurement unit 140 can include at least one temperature measurement unit passing through the lower plate 120 and the upper plate 130, the at least one temperature measurement unit is mounted on the spray plate 110, and the at least one temperature measurement unit measures the temperature of a predetermined area of the spray plate 110.

[0087] More specifically, the temperature measurement unit 140 can include: a temperature sensor 141 formed to pass through the lower plate 120 and the upper plate 130, and a protective bushing 142 formed to surround at least a part of the lower end of the temperature sensor 141, the protective bushing 142 being adjacent to the spray plate 110, thereby isolating the temperature sensor 141 from the vacuum environment of the processing space A of the processing chamber 20.

[0088] The temperature sensor 141 can be an optical fiber temperature sensor capable of measuring temperature using an optical fiber.

[0089] More specifically, the optical fiber temperature sensor can be a sensor that measures temperature by direct contact, and various types of sensors can be applied, such as a sensor using an optical fiber as a light transmission path and a sensor using the optical fiber itself as a functional sensor.

[0090] In addition, the protective bushing 142 that protects the temperature sensor 141 to isolate the temperature sensor 141 from the vacuum environment of the processing space A of the processing chamber 20 can preferably be formed of a transparent quartz material to isolate the temperature sensor 141 from the vacuum environment of the processing space A while maintaining a state of smoothly performing the function of measuring temperature using light.

[0091] Accordingly, the optical fiber temperature sensor of the temperature sensor 141 can be protected by the protective sleeve 142 formed of quartz material, so that the optical fiber temperature sensor can be isolated from the processing space A in the vacuum environment of the processing chamber 20, and can be maintained in a non-vacuum state and not exposed to the processing gas, thereby extending the service life of the sensor and enabling the sensor to work properly in the non-vacuum state, thereby improving the accuracy of temperature measurement.

[0092] Finally, Figure 5 FIG. shows a temperature measurement unit, a power supply, and a controller included in a showerhead according to an exemplary embodiment of the present disclosure.

[0093] As Figure 5 shown, a plurality of temperature measurement units 140 may be included to measure the temperature of each of the regions CR, MR, and ER of the shower plate 110.

[0094] In addition, as Figure 5 shown, a power supply 160 and a controller 170 may also be included. The power supply 160 powers the planar heating element 150 to operate the planar heating element 150 as a heat dissipation element, and the controller 170 controls the temperature of the planar heating element 150 through the power supply 160 based on the temperature measured by the temperature measurement unit 140. That is, the controller 170 may control the power supply 160 to keep the temperature of the planar heating element 150 uniform.

[0095] When the power supply of the power supply 160 is cut off, the above-mentioned planar heating element 150 can operate as a heat conductor.

[0096] As described above, according to an exemplary embodiment of the present disclosure, the uniform temperature distribution of the showerhead can be controlled by the planar heating element instead of the heating member located outside the electrostatic chuck.

[0097] In addition, according to an exemplary embodiment of the present disclosure, by using graphene or a graphene hybrid material, the planar heating element can have excellent heat dissipation characteristics and thermal conductivity.

[0098] Although the exemplary embodiments have been shown and described above, it will be apparent to those skilled in the art that modifications and changes can be made without departing from the scope of the present disclosure defined by the appended claims.

Claims

1. A showerhead for spraying a processing gas for processing a substrate into a processing space of a processing chamber, the showerhead comprising: a spray plate having a plurality of spray holes formed therein, the spray plate being configured to spray a process gas into a processing space through the plurality of spray holes; a lower plate, mounted on the upper side of the spray plate, wherein a plurality of spray flow paths connected to the plurality of spray holes are formed in the lower plate; an upper plate installed on an upper side of the lower plate, the upper plate being configured to inject a processing gas to the plurality of injection flow paths; as well as A planar heating element is configured to heat a process gas injected through the injection plate.

2. The nozzle according to claim 1, wherein: The planar heating element is graphene or a graphene mixed material.

3. The nozzle according to claim 2, wherein: The graphene mixed material is a material in which graphene and graphite particles are mixed in a weight ratio of 1:2 to 1:8 and a size ratio of the graphene to the graphite particles is 1:30 to 1:2000.

4. The nozzle according to claim 1, wherein: The thickness of the planar heating element is greater than or equal to 0.1 mm and less than or equal to 0.2 mm.

5. The nozzle according to claim 1, wherein: The planar heating element is disposed in at least one of a space between the spray plate and the lower plate and a space between the lower plate and the upper plate.

6. The nozzle according to claim 5, wherein: The planar heating element has a shape corresponding to a shape of a surface where the spray plate and the lower plate contact each other, or a shape corresponding to a shape of a surface where the lower plate and the upper plate contact each other.

7. The nozzle according to claim 1, wherein: The planar heating element has a plurality of through holes formed therein, The plurality of through holes are formed in numbers corresponding to the number of the plurality of injection holes or the plurality of injection flow paths, respectively.

8. The spray head according to claim 1, further comprising: A power supply is configured to operate the planar heating element as a heat dissipation element by supplying power to the planar heating element.

9. The spray head according to claim 8, further comprising: At least one temperature measuring unit passes through the lower plate and the upper plate, the at least one temperature measuring unit is mounted on the spray plate, and the at least one temperature measuring unit is configured to measure the temperature of the spray plate.

10. The spray head according to claim 9, further comprising: A controller is configured to control the temperature of the planar heating element through the power supply based on the temperature of the spray plate measured by the temperature measuring unit.

11. The nozzle according to claim 10, wherein: The controller is configured to control the power supply to maintain a uniform temperature of the planar heating element.

12. The spray head according to claim 8, wherein: The planar heating element is configured to operate as a heat conductor when power supplied by the power source is disconnected.

13. The spray head according to claim 1, wherein: A cooling flow path is formed in the upper plate, through which a refrigerant flows to prevent the spray plate from being heated to a temperature higher than or equal to a limit temperature. The showerhead according to claim 13 , wherein the cooling flow path is configured as a single flow path.

15. The spray head according to claim 14, wherein: The single flow path is formed along an edge region of the upper plate to have a curved shape in the edge region, The single flow path is formed along a boundary between an edge region and a middle region of the upper plate to have a circular shape at the boundary, The single flow path is formed along a middle region of the upper plate to have a curved shape in the middle region, The single flow path is formed along a boundary between the middle region and the center region of the upper plate to have a circular shape at the boundary, and The single flow path is formed in a central area of ​​the upper plate to have a circular shape.

16. A showerhead for spraying a processing gas for processing a substrate into a processing space of a processing chamber, the showerhead comprising: a spray plate having a plurality of spray holes formed therein, the spray plate being configured to spray a process gas into a processing space through the plurality of spray holes; a lower plate, mounted on the upper side of the spray plate, wherein a plurality of spray flow paths connected to the plurality of spray holes are formed in the lower plate; an upper plate installed on an upper side of the lower plate, the upper plate being configured to inject a processing gas to the plurality of injection flow paths; a planar heating element configured to heat a process gas injected through the injection plate; a power source configured to operate the planar heating element as a heat dissipation element by supplying power to the planar heating element; at least one temperature measuring unit, which passes through the lower plate and the upper plate, the at least one temperature measuring unit is mounted on the spray plate, and the at least one temperature measuring unit is configured to measure the temperature of the spray plate; as well as a controller configured to control the temperature of the planar heating element through the power supply based on the temperature of the spray plate measured by the temperature measuring unit, The planar heating element has a shape corresponding to the shape of the surface where the spray plate and the lower plate contact each other, or a shape corresponding to the shape of the surface where the lower plate and the upper plate contact each other.

17. The spray head according to claim 16, wherein: The planar heating element is a material in which graphene and graphite particles are mixed in a weight ratio of 1:2 to 1:8 and a size ratio of the graphene to the graphite particles is 1:30 to 1:2000.

18. The spray head according to claim 17, wherein: The thickness of the planar heating element is greater than or equal to 0.1 mm and less than or equal to 0.2 mm.

19. The spray head according to claim 16, wherein: The planar heating element is configured to operate as a heat conductor when power supplied by the power source is disconnected.

20. A substrate processing device, comprising: a processing chamber in which a processing space for processing a substrate is formed; a shower head installed at an upper side of the processing space in the processing chamber, the shower head being configured to spray a processing gas for processing a substrate into the processing space; and a substrate support, mounted on the lower side of the processing space in the processing chamber to be vertically opposite to the shower head, the substrate being located on the substrate support, Wherein, the nozzle comprises: a spray plate having a plurality of spray holes formed therein, the spray plate being configured to spray a processing gas into the processing space through the plurality of spray holes; a lower plate, mounted on the upper side of the spray plate, wherein a plurality of spray flow paths connected to the plurality of spray holes are formed in the lower plate; an upper plate installed on an upper side of the lower plate, the upper plate being configured to inject a process gas to the plurality of injection flow paths; and a planar heating element configured to heat a process gas injected through the injection plate, The planar heating element is graphene or a graphene mixed material, and the graphene mixed material is a material in which graphene and graphite particles are mixed in a weight ratio of 1:2 to 1:8 and a size ratio of graphene to graphite particles is 1:30 to 1:2000, and The planar heating element is disposed in at least one of a space between the spray plate and the lower plate and a space between the lower plate and the upper plate.

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