Vapor deposition chamber

Abstract

The vapor deposition chamber comprises a growth chamber, a bearing seat, a shaft body, a bearing disc, an inclined supporting mechanism and a source gas injection device, the shaft body is fixedly arranged in the middle of the bearing seat, the top of the shaft body protrudes out of the top face of the bearing seat, and an opening is formed in the side wall of the side, close to the shaft body, of a first groove formed in the top face of the bearing seat; the bearing disc is contained in the first groove and comprises a movable end and a free end, and the movable end is movably matched with the top of the shaft body through an opening in the side wall of one side of the first groove. The inclined supporting mechanism is arranged on the bearing seat and comprises a medium supply pipeline and a movable supporting part arranged below the free end part, the movable supporting part ascends or descends to drive the free end part to ascend or descend relative to the movable end part, and when the incoming flow direction of source gas provided by the source gas injection device to the substrate to be coated points to the free end part from the movable end part, the free end part is driven to ascend or descend relative to the movable end part. When the inclined supporting structure enables the free end part to be lifted, the depletion trend of the source gas during deposition on the substrate to be coated can be adjusted, and the uniformity of the thickness of the film layer of the substrate to be coated is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and particularly relates to a chemical vapor deposition chamber. Background Art

[0002] In the field of semiconductor material growth and thin film preparation technology, horizontal flow equipment has become one of the key equipment for achieving high-quality thin film deposition and material growth due to its unique gas flow characteristics and structural design. The core design lies in ensuring that the growth surface of the substrate is basically parallel to the flow direction of the source gas, and by precisely controlling the gas flow pattern, the purpose of optimizing the uniformity of material growth or thin film deposition is achieved.

[0003] However, although horizontal flow equipment has many theoretical advantages, it faces a series of challenges in the actual application process. Specifically, when the source gas is introduced into the equipment, since the flow direction is approximately parallel to the growth surface of the substrate, along the oncoming flow direction of the source gas, the source gas reacts while flowing, showing a depletion trend. This may lead to significant non-uniformity in the thin film thickness, and may further have an adverse impact on the performance and reliability of the final product. Summary of the Invention

[0004] In view of the defects and deficiencies in the prior art, the present application provides a chemical vapor deposition chamber that can realize real-time adjustment of the tilt angle of the substrate to be coated according to the deposition situation during the process and ensure the stability of the adjustment process, which is beneficial to optimizing the depletion trend of the source gas during deposition on the substrate to be coated and improving the uniformity of the film layer thickness of the substrate to be coated.

[0005] The present application provides a chemical vapor deposition chamber, including:

[0006] A growth chamber;

[0007] A carrier seat, arranged in the growth chamber, with a first groove provided on the top surface, and one side sidewall of the first groove is open;

[0008] A shaft body, fixedly arranged in the middle of the carrier seat, with the top of the shaft body protruding above the top surface of the carrier seat, and the open side sidewall of the first groove is close to the top of the shaft body;

[0009] A carrier disk, arranged in the first groove, with a second groove provided on the top surface of the carrier disk to accommodate the substrate to be coated; the carrier disk includes a movable end and a free end, and the movable end is movably adapted to the top of the shaft body through the open side sidewall of the first groove;

[0010] The inclined support mechanism is disposed on the bearing seat and includes a medium supply pipeline for providing a driving medium for the carrier disk and a movable support portion communicating with the medium supply pipeline. The movable support portion is located below the free end and is lifted or lowered under the action of the driving medium of the carrier disk, so as to drive the free end to lift or lower relative to the movable end.

[0011] The source gas injection device is disposed opposite to the middle of the bearing seat and is used for injecting source gas into the growth chamber, so that the source gas flows through the substrate to be coated in the direction from the movable end to the free end.

[0012] As an implementation manner, the movable support portion includes a support body with an open top and a hollow interior, and a lifting body movably disposed in the support body from the top of the support body. The lifting body is located below the free end. One end of the medium supply pipeline communicates with the interior of the support body. The driving medium of the carrier disk enters the interior of the support body and acts on the bottom of the lifting body, so that the top of the lifting body protrudes from the top of the support body or is received in the support body, thereby driving the free end to lift or lower relative to the movable end.

[0013] As an implementation manner, the support body and the medium supply pipeline are disposed in the bearing seat, and the bottom surface of the first groove is provided with an outlet structure adapted to the movable penetration of the lifting body.

[0014] As an implementation manner, the support body includes a cylinder, and the lifting body includes a piston movably disposed in the cylinder.

[0015] As an implementation manner, the movable support portion, the bearing seat and the carrier disk are made of the same material, and the material includes graphite.

[0016] As an implementation manner, the medium supply pipeline is disposed in the bearing seat, below the carrier disk, and extends into the shaft body and extends out of the growth chamber through the shaft body. The movable support portion and the medium supply pipeline are opposite to each other along the radial direction of the bearing seat.

[0017] As an implementation manner, the number of the first grooves and the inclined support mechanisms is at least 2, and they are arranged in one-to-one correspondence.

[0018] As an implementation manner, the number of the first grooves is at least 2 and they are evenly arranged around the shaft body.

[0019] As an implementation manner, the first grooves and the corresponding carrier disks received therein are both fan-shaped rings.

[0020] As an implementation manner, the top surface of the carrier seat includes the top surface of the carrier seat except the first groove, the top surface of the carrier disk includes the top surface of the carrier disk except the second groove, and the top surface of the carrier seat is flush with the top surface of the carrier disk.

[0021] As an implementation manner, the movable end portion includes an end side wall facing the side wall at the top of the shaft body;

[0022] The end side wall is in sliding fit with at least part of the side wall at the top of the shaft body; or,

[0023] There is a spacing between the end side wall and the side wall at the top of the shaft body. When the free end is lifted relative to the movable end portion, the carrier disk moves toward the shaft body through the opening on one side wall of the first groove, and the end side wall is in sliding fit with at least part of the side wall at the top of the shaft body.

[0024] As an implementation manner, the spacing does not exceed 0.2 millimeters.

[0025] As an implementation manner, the bottom surface of the region between the top of the shaft body and the corresponding first groove is flush with the bottom surface of the first groove, and the height difference between the top surface of the shaft body and the top surface of the carrier disk received in the corresponding first groove is greater than or equal to 0 and less than 2 centimeters.

[0026] As an implementation manner, the shape of the side wall at the top of the shaft body and the shape of the end side wall are in a concave-convex fitting relationship.

[0027] As an implementation manner, the shaft body is provided with a self-rotation driving air duct, the self-rotation driving air duct extends into the carrier disk through the side wall at the top of the shaft body, and the air outlet of the self-rotation driving air duct is arranged at the bottom of the second groove to provide self-rotation driving gas to make the substrate to be coated rotate relative to the carrier disk.

[0028] As an implementation manner, the end side wall is in sliding fit with at least part of the side wall at the top of the shaft body, and the outlet of the self-rotation driving air duct located on the side wall at the top of the shaft body is communicated with the inlet located on the end side wall;

[0029] During the process of the free end being lifted relative to the movable end portion, the outlet of the self-rotation driving air duct located on the side wall at the top of the shaft body is communicated with the inlet located on the end side wall.

[0030] As an implementation manner, there is a spacing between the end side wall and the side wall at the top of the shaft body, and the outlet of the self-rotation driving air duct located on the side wall at the top of the shaft body is opposite to the inlet located on the end side wall;

[0031] During the process of the free end being lifted relative to the movable end, the self-rotating drive air duct is communicated with the outlet on the top side wall of the shaft body and the inlet on the end side wall.

[0032] As described above, the gas deposition chamber of the present application has the following beneficial effects:

[0033] In the gas deposition chamber of the present application, the shaft body is fixedly arranged in the middle of the bearing seat, the top of the shaft body protrudes from the top surface of the bearing seat, and one side side wall of the first groove arranged on the top surface of the bearing seat is open near the top of the shaft body; the bearing disk for accommodating the substrate to be coated is accommodated in the first groove, and the bearing disk includes a movable end and a free end, and the movable end is movably adapted to the top of the shaft body through the opening on one side side wall of the first groove; the movable support part of the inclined support mechanism is located below the free end, and the movable support part is communicated with the medium supply pipeline. When the medium supply pipeline provides the bearing disk drive medium, the movable support part drives the free end to lift or lower relative to the movable end, thereby optimizing the depletion trend of the source gas during deposition on the substrate to be coated, improving the uniformity of the film layer thickness of the substrate to be coated, realizing real-time adjustment of the inclination angle of the substrate to be coated and ensuring the stability of the adjustment process. Description of the Drawings

[0034] Figure 1 Shows a schematic structural diagram of a gas deposition chamber in the prior art.

[0035] Figure 2 Shows a partial top view structural diagram of a gas deposition chamber according to Embodiment 1 of the present invention.

[0036] Figure 3 Shows Figure 2 The cross-sectional structural diagram of the working state along the A-A' direction in

[0037] Figure 4 Shows Figure 3 The structural diagram of the inclined support mechanism in

[0038] Figure 5 Shows Figure 2 The structural diagram of one of the first grooves in

[0039] Figure 6 Shows a partial detailed view of the gas deposition chamber according to Embodiment 1 of the present invention.

[0040] Figure 7 Shows a partial top view structural diagram of another gas deposition chamber according to Embodiment 1 of the present invention.

[0041] Figure 8 Shows Figure 7 The cross-sectional structural diagram of the working state along the B-B' direction in

[0042] Figure 9 A cross-sectional structural schematic diagram showing the working state of the vapor deposition chamber according to the second embodiment of the present invention.

[0043] Element number description

[0044] 10, growth chamber; 20, source gas injection device; 30, base; 40, substrate; 50, heating device; 100, carrier; 101, piston outlet; 110, first groove; 120, inclined support mechanism; 121, medium supply pipeline; 122, movable support part; 123, outlet structure; 200, shaft body; 210, top of the shaft body; 211, side wall of the top of the shaft body; 300, carrier plate; 301, movable end; 302, free end; 310, self-rotation drive air duct; 311, main self-rotation drive air duct; 312, self-rotation drive branch air duct; 400, second groove; 500, substrate to be coated; 600, counterbore; 1221, support body; 1222, lifting body; 3011, side wall of the end. Detailed implementation manners

[0045] The following illustrates the implementation manners of the present invention through specific specific examples. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation manners. Various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0046] Please refer to Figures 1 to 9 . It should be noted that the diagrams provided in this embodiment only illustrate the basic concept of the present invention in a schematic manner. Therefore, only the components related to the present invention are shown in the diagrams, rather than being drawn according to the number, shape, and size of the components in actual implementation. The type, quantity, and ratio of each component in actual implementation can be arbitrarily changed, and the component layout type may also be more complex.

[0047] Figure 1 Shown is a vapor deposition chamber in the prior art, including a growth chamber 10, a source gas injection device 20, a base 30, and a heating device 50. Specifically, the source gas injection device 20 is disposed at the top of the growth chamber 10 and extends towards the middle of the base 30 disposed in the growth chamber 10; the substrates 40 are arranged around the middle of the base 30; the source gas provided by the source gas injection device 20 can flow through the substrates 40 in a laminar flow manner after being ejected, so as to realize the growth of the film layer on the substrates 40; the heating device 50 is disposed below the base 30 and is used to heat the substrates 40 placed on the base 30 to meet the temperature conditions required during the growth process.

[0048] Although the gas deposition chambers in the prior art consider the uniform distribution of source gases in their designs, they still face some problems in practical applications. Since the growth surface of the substrate 40 is approximately parallel to the flow direction of the source gas, and the source gas is close to the surface of the substrate 40, when the source gas injection device 20 supplies the source gas, along the incoming flow direction of the source gas, the source gas reacts while flowing, showing a depletion trend.

[0049] This depletion trend of the source gas has a serious impact on the uniformity and quality of film formation. Specifically, on the upstream side, due to the high concentration of the source gas, the deposition rate is relatively fast, which may lead to an excessive film thickness; while on the downstream side, due to the exhaustion of the source gas, the deposition rate is slow, which may lead to non-uniform film thickness and reduce the overall quality of film formation.

[0050] To address the above defects, the present application provides a gas deposition chamber. The following embodiments will be described in detail.

[0051] Embodiment 1

[0052] This embodiment provides a gas deposition chamber. As Figures 1 to 8 shown, the gas deposition chamber includes a carrier seat 100, a shaft body 200, a carrier disk 300, an inclined support mechanism 120, and a source gas injection device 20. The source gas injection device 20 is disposed opposite to the middle of the carrier seat 100 and is used to inject source gas into the growth chamber so that the source gas flows through the top surface of the substrate 500 to be coated. The growth chamber 10, the source gas injection device 20, and the heating device 50 in the gas deposition chamber of this embodiment can be referred to Figure 1 .

[0053] As Figures 2 to 6 shown, the carrier seat 100 is disposed in the growth chamber. A first groove 110 for accommodating the carrier disk 300 is provided on the top surface of the carrier seat 100, and one side wall of the first groove 110 is open. The shaft body 200 is fixedly disposed in the middle of the carrier seat 100, and the top 210 of the shaft protrudes from the top surface of the carrier seat 100. One side wall opening of the first groove 110 is close to the top 210 of the shaft. In some embodiments, the shaft body 200 penetrates the growth chamber in a dynamic seal and is fixedly disposed in the middle of the carrier seat 100. Specifically, a rotary seal assembly is provided on the part of the shaft body 200 extending outside the growth chamber to drive the shaft body 200 to rotate and ensure the airtightness between the shaft body 200 and the growth chamber. The specific implementation manner is a conventional technical means in the art. In some specific embodiments, the rotary seal assembly is a magnetic fluid rotary seal assembly.

[0054] In some embodiments, the first groove 110 is a groove formed in the carrier base 100; the top of the first groove 110 is open. Specifically, the top surface of the carrier base 100 is provided with a plurality of radial side walls extending radially along the top surface of the carrier base 100, distributed radially around the shaft body 200. The adjacent radial side walls and the edge of the carrier base 100 enclose the first groove 110, and one side wall of the first groove 110 near the top 210 of the shaft body is open.

[0055] As Figure 5 shown, the carrier disk 300 is received in the first groove 110. The top surface of the carrier disk 300 is provided with a second groove 400 for receiving the substrate 500 to be coated, and the top of the second groove 400 is open. The carrier disk 300 includes a movable end 301 and a free end 302. The movable end 301 is the end near the shaft body 200, and the free end 302 is the end opposite to the movable end 301 along the radial direction of the first groove 110 (i.e., the direction from the shaft body 200 to the edge of the carrier base 100). Among them, the movable end 301 is movably adapted to the top 210 of the shaft body through the opening of one side wall of the first groove 110. When the carrier disk 300 is received in the first groove 110, it can move relative to the first groove 110 and has a certain degree of freedom of movement. In some specific embodiments, the bottom surface of the carrier disk 300 is in contact with the bottom surface of the first groove 110, and there is a certain gap between each side surface of the carrier disk 300 and the first groove 110. The setting of this gap is necessary to not affect the movement of the free end 302 relative to the carrier base 100 through the inclined support mechanism 120, and when the shaft body 200 is set as a rotatable shaft body, the rotation of the carrier base 100 can make the carrier disk 300 in the first groove 110 rotate synchronously and remain stable.

[0056] In some embodiments, the rotation speed of the shaft body 200 is controlled not to exceed 100 revolutions per minute. Too high a rotation speed is likely to cause significant displacement or even flying off of the carrier disk 300 and / or the substrate 500 carried by the carrier disk 300 relative to the carrier base 100.

[0057] The inclined support mechanism 120 is provided on the carrier base 100 and includes a medium supply pipeline 121 for providing a carrier disk driving medium and a movable support portion 122 communicated with the medium supply pipeline 121. The movable support portion 122 is located below the free end 302. The medium supply pipeline 121 is used to supply a carrier disk driving medium to the movable support portion 122 to lift the movable support portion 122, so that the movable support portion 122 drives the free end 302 to lift relative to the movable end 301, so that a first included angle α is formed between the bottom surface of the carrier disk 300 and the bottom of the first groove 110. Reducing the flow rate of the carrier disk driving medium or stopping the supply of the carrier disk driving medium can cause the movable support portion 122 to descend, thereby causing the free end 302 to descend.

[0058] When the flow direction of the source gas provided to the substrate 500 to be coated through the source gas injection device points from the movable end 301 to the free end 302, the free end 302 can be lifted relative to the movable end 301 by the lifting of the movable support portion 122. Thereby, the depletion trend of the source gas during deposition on the substrate 500 to be coated can be adjusted, the uniformity of the film layer thickness of the substrate 500 to be coated can be improved, the real-time adjustment of the tilt angle of the substrate 500 to be coated can be achieved, and the stability of the adjustment process can be ensured.

[0059] In this embodiment, as Figure 4 shown, the movable support portion 122 includes a support body 1221 with an open top and a hollow interior, and a lifting body 1222 movably arranged in the support body 1221 from the top of the support body 1221. The lifting body 1222 is located below the free end 302. One end of the medium supply pipeline 121 communicates with the inside of the support body 1221. The carrier disk drives the medium into the support body 1221 and acts on the bottom of the lifting body 1222, so that the top of the lifting body 1222 protrudes from the top of the support body 1221 or is accommodated in the support body 1221, thereby driving the free end 302 to lift or lower relative to the movable end 301.

[0060] In some embodiments, the support body 1221 and the medium supply pipeline 121 are arranged in the carrier seat 100, and the bottom surface of the first groove 110 is provided with an outlet structure 123 adapted to allow the lifting body 1222 to pass through movably.

[0061] In some embodiments, the support body 1221 includes a cylinder, and the lifting body includes a piston movably arranged in the cylinder.

[0062] In some embodiments, the medium supply pipeline 121 is arranged in the carrier seat 100 and is located below the carrier disk 300. The movable support portion 122 and the medium supply pipeline 121 are opposite to each other along the radial direction of the carrier seat 100.

[0063] In some embodiments, the medium supply pipeline 121 further extends into the shaft body 200 and extends outside the growth chamber through the shaft body 200.

[0064] In some embodiments, the number of the first grooves 110 and the tilt support mechanisms 120 is at least 2, and they are arranged in one-to-one correspondence. The number of the first grooves 110 and the tilt support mechanisms 120 is the same. One tilt support mechanism 120 is arranged corresponding to one first groove 110. In this way, the tilt support mechanism 120 can judge whether it is necessary to lift the free end 302 according to the process of the real-time deposition process, and which free end 302 of the carrier disk 300 accommodated in which first groove 110 needs to be lifted specifically.

[0065] In some embodiments, the number of the first grooves 110 is at least 2 and they are arranged uniformly around the shaft body 200.

[0066] In some specific embodiments, the first groove 110 is in a sector-annular shape, and the shape of the carrier disk 300 accommodated in the first groove 110 is the same as that of the first groove 110, which is also in a sector-annular shape.

[0067] In some embodiments, the top surface of the carrier base 100 includes the carrier base top surface except the first groove 110, and the top surface of the carrier disk 300 includes the carrier disk top surface except the second groove 400. The carrier base top surface is flush with the carrier disk top surface. When the number of the first grooves 110 and the carrier disks 300 accommodated therein is at least 2, the top surfaces of the carrier disks 300 and the top surfaces between adjacent carrier disks 300 are flush, which can reduce or even avoid the adverse turbulent flow generated by the source gas.

[0068] In some embodiments, the movable end 301 includes an end side wall 3011 facing the side wall of the top of the shaft body 210. The side wall of the top of the shaft body 210 is the side wall 211 of the top of the shaft body. The end side wall 3011 is in sliding fit with at least part of the side wall of the top of the shaft body 211. When the free end 302 is lifted relative to the carrier base 100, the end side wall 3011 slides along at least part of the side wall of the top of the shaft body 211, so that the height of the free end 302 is higher than the height of the movable end 301.

[0069] In some embodiments, there is a gap between the end side wall 3011 and the side wall 211 of the top of the shaft body. When the free end 302 is lifted relative to the movable end 301, the carrier disk 300 moves towards the shaft body 200 through the side wall opening of one side of the first groove 110, and the end side wall 3011 is in sliding fit with at least part of the side wall of the top of the shaft body 210.

[0070] In some specific embodiments, the gap does not exceed 0.2 mm.

[0071] In some embodiments, the bottom surface of the region between the top of the shaft body 210 and the corresponding first groove 110 is flush with the bottom surface of the first groove 110, which can ensure the smooth movement of the carrier disk 300 towards the side wall of the top of the shaft body 210 when the tilting support mechanism 120 lifts the free end 302. The height difference between the top surface of the shaft body 200 and the top surface of the carrier disk 300 accommodated in the corresponding first groove 110 is greater than or equal to 0 and less than 2 cm. Controlling the height difference between the top surface of the shaft body 200 and the top surface of the carrier disk 300 after the first groove 110 accommodates the carrier disk 300 not to exceed 2 cm can ensure that the convexity of the top surface of the shaft body 200 will not form a turbulent flow that is unfavorable to the deposition reaction, so as to ensure the stability of the deposition reaction.

[0072] In some embodiments, the shape of the top side wall 211 of the shaft body and the shape of the end side wall 3011 are in a concave-convex fitting relationship. In some specific embodiments, the end side wall 3011 is a concave arc surface, and the top side wall 211 of the shaft body is a convex arc surface, and their radii of curvature are the same.

[0073] In some embodiments, the movable support portion 122, the carrier base 100, and the carrier disk 300 are made of the same material. For example: the material can be graphite, and the surface coating such as pyrolytic carbon and silicon carbide can be selected according to different growth materials.

[0074] In some specific embodiments, an optical detection device is provided on the source gas injection device outside the growth chamber to detect the reflectivity of different regions of the film deposited on the substrate 500 to be coated in real time to calculate the growth rate, so as to evaluate the uniformity of the film growth on the substrate 500 to be coated in real time. The specific implementation method is a conventional technical means in the art.

[0075] In some embodiments, the carrier disk driving medium can be a gas, and the gas is selected from one or more of nitrogen, argon, and hydrogen.

[0076] In some embodiments, as Figure 2 and Figure 7 shown, the shape of the carrier base 100 can be cylindrical, and a plurality of fan-shaped first grooves 110 are provided in the carrier base 100. Each fan-shaped first groove 110 has the same center of the circle, that is, the center of the circle of the carrier base 100; a carrier disk 300 is provided in each first groove 110, and the shape of the carrier disk 300 is adapted to the shape of the first groove 110. At least one cylindrical second groove 400 is provided on the top surface of the carrier disk 300. As Figure 7 and Figure 8 shown, when a plurality of cylindrical second grooves 400 are provided on the top surface of each carrier disk 300, the centers of the plurality of second grooves 400 are located on the same radial line of the carrier disk 300. Specifically, when two cylindrical second grooves 400 are respectively provided in each carrier disk 300, one substrate 500 to be coated is placed in each second groove 400, and the centers of the two second grooves 400 are located on the same radius of the carrier disk 300; the second grooves 400 located in the inner layer in all carrier disks 300 are defined as inner layer second grooves, and the second grooves 400 located in the outer layer in all carrier disks 300 are defined as outer layer second grooves. The centers of all the inner layer second grooves are located on the same concentric circle of the first groove 110, and the centers of all the outer layer second grooves are located on the same concentric circle of the first groove 110.

[0077] In some embodiments, as Figure 2 、 Figure 3 and Figure 7As shown, a counterbore 600 is provided at the center of the carrier base 100 for arranging the shaft body 200.

[0078] Embodiment 2

[0079] This embodiment also provides a chemical vapor deposition chamber. As Figure 9 shown, the difference between this embodiment and Embodiment 1 lies in:

[0080] As Figure 9 shown, the shaft body 200 is provided with a self-rotation driving air passage 310. The self-rotation driving air passage 310 extends into the carrier plate 300 through the side wall 211 at the top of the shaft body. The air outlet of the self-rotation driving air passage 310 is arranged at the bottom of the second groove 400 to provide self-rotation driving gas to make the substrate 500 to be coated rotate relative to the carrier plate 300.

[0081] In some specific embodiments, at least part of the side wall of the end side wall 3011 is in sliding fit with the side wall of the top of the shaft body 210. The outlet of the self-rotation driving air passage 310 on the side wall 211 at the top of the shaft body communicates with the inlet on the end side wall 3011. During the process of the free end 302 being lifted relative to the movable end 301, the outlet of the self-rotation driving air passage 310 on the side wall 211 at the top of the shaft body communicates with the inlet on the end side wall 3011.

[0082] In some specific embodiments, there is a gap between the end side wall 3011 and the side wall 211 at the top of the shaft body. The outlet of the self-rotation driving air passage 310 on the side wall 211 at the top of the shaft body is opposite to the inlet on the end side wall 3011. During the process of the free end 302 being lifted relative to the movable end 301, the outlet of the self-rotation driving air passage 310 on the side wall 211 at the top of the shaft body communicates with the inlet on the end side wall 3011.

[0083] In some specific embodiments, the self-rotation driving air passage 310 includes a self-rotation driving main air passage 311 and self-rotation driving branch air passages 312. The self-rotation driving main air passage 311 is the main air passage located in the carrier plate 300, and its extension is along the radial direction of the carrier plate 300. In some specific embodiments, the extending direction of the self-rotation driving main air passage 311 is parallel to the upper surface or the lower surface of the carrier plate 300, that is, the gas flow direction therein is parallel to the upper surface or the lower surface of the carrier plate 300.

[0084] The opening direction of the self-rotation driving branch air passages 312 is perpendicular to the direction of the self-rotation driving main air passage 311 or there is a certain included angle between them, and there are at least two self-rotation driving branch air passages 312. The distribution positions between the multiple self-rotation driving branch air passages 312 can be symmetric about the center of the substrate 500 to be coated, so as to achieve a better self-rotation effect of the substrate 500 to be coated. The inlet of each self-rotation driving branch air passage 312 is communicated with the outlet of the self-rotation driving main air passage 311.

[0085] In some embodiments, the gas in the self-rotation driving air duct 310 is selected from one or more of nitrogen, argon, and hydrogen.

[0086] The above embodiments are only illustrative of the principles and effects of the present invention and are not intended to limit the present invention. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical idea disclosed by the present invention should still be covered by the claims of the present invention.

Claims

1. A vapor deposition chamber, characterized in that: include: Growth chambers; A bearing seat is arranged in the growth chamber, and a first groove is arranged on the top surface, and a side wall of one side of the first groove is open; A shaft body is fixedly arranged in the middle of the bearing seat, the top of the shaft body protrudes from the top surface of the bearing seat, and the opening of one side wall of the first groove is close to the top of the shaft body; A carrier plate is disposed in the first groove, and a second groove is disposed on the top surface of the carrier plate to accommodate the substrate to be coated; The carrier plate comprises a movable end and a free end, and the movable end is movably adapted to the top of the shaft body through an opening of a side wall of the first groove; A tilt support mechanism, disposed on the bearing seat, comprising a medium supply pipeline for providing a medium for driving the bearing plate and a movable support portion connected to the medium supply pipeline, wherein the movable support portion is located below the free end portion, so as to be lifted or lowered under the action of the medium for driving the bearing plate, so as to drive the free end portion to be lifted or lowered relative to the movable end portion; The source gas injection device is arranged opposite to the middle of the supporting seat, and is used for injecting source gas into the growth chamber so that the source gas flows through the substrate to be coated along the direction from the active end to the free end.

2. The vapor deposition chamber according to claim 1, characterized in that: The movable support part includes a support body with an open top and a hollow interior, and a lifting body movably arranged in the support body from the top of the support body, the lifting body is located below the free end, one end of the medium supply pipeline is connected to the support body, and the carrier plate drives the medium to enter the support body and act on the bottom of the lifting body, so that the top of the lifting body protrudes from the top of the support body, or is accommodated in the support body, thereby driving the free end to rise or fall relative to the movable end.

3. The vapor deposition chamber according to claim 2, characterized in that: The supporting body and the medium supply pipeline are arranged in the bearing seat, and the bottom surface of the first groove is provided with an outlet structure adapted to be movably penetrated by the lifting body.

4. The vapor deposition chamber according to claim 2, characterized in that: The supporting body comprises a cylinder, and the lifting body comprises a piston movably arranged in the cylinder.

5. The vapor deposition chamber according to claim 1, characterized in that: The movable support portion, the bearing seat and the bearing plate have the same constituent material, and the constituent material includes graphite.

6. The vapor deposition chamber according to claim 1, characterized in that: The medium supply pipeline is arranged in the bearing seat, located below the bearing plate, and extends into the shaft body and extends outside the growth chamber through the shaft body. The movable support part and the medium supply pipeline are opposite to each other along the radial direction of the bearing seat.

7. The vapor deposition chamber according to claim 1, characterized in that: The number of the first grooves and the number of the tilting support mechanisms are both at least 2, and they are arranged in one-to-one correspondence.

8. The vapor deposition chamber according to claim 1, characterized in that: The number of the first grooves is at least 2 and they are evenly arranged around the shaft.

9. The vapor deposition chamber according to claim 1, characterized in that: The first groove and the corresponding carrier plate accommodated therein are both in a fan-shaped shape.

10. The vapor deposition chamber according to claim 1, characterized in that: The top surface of the supporting seat includes the top surface of the supporting seat except the first groove, the top surface of the supporting plate includes the top surface of the supporting plate except the second groove, and the top surface of the supporting seat is flush with the top surface of the supporting plate.

11. The vapor deposition chamber according to claim 1, characterized in that: The movable end portion includes an end side wall facing the top side wall of the shaft body; The end side wall is slidably fitted with at least a portion of the side wall at the top of the shaft body; or, There is a distance between the end side wall and the top side wall of the shaft body. When the free end is lifted relative to the movable end, the supporting plate moves toward the shaft body through a side wall opening of the first groove, and makes the end side wall slide and fit with at least part of the side wall at the top of the shaft body.

12. The vapor deposition chamber according to claim 11, characterized in that: The spacing does not exceed 0.2 mm.

13. The vapor deposition chamber according to claim 11, characterized in that: The bottom surface of the area between the top of the shaft and the corresponding first groove is flush with the bottom surface of the first groove, and the height difference between the top surface of the shaft and the top surface of the supporting plate accommodated in the corresponding first groove is greater than or equal to 0 and less than 2 cm.

14. The vapor deposition chamber according to claim 11, characterized in that: The shape of the top side wall of the shaft body and the shape of the end side wall are in a concave-convex fitting relationship.

15. The vapor deposition chamber according to claim 11, characterized in that: The shaft body is provided with a self-rotation driving air channel, and the self-rotation driving air channel extends into the supporting plate through the top side wall of the shaft body. The outlet of the self-rotation driving air channel is arranged at the bottom of the second groove to provide self-rotation driving gas to make the substrate to be coated rotate relative to the supporting plate.

16. The vapor deposition chamber according to claim 15, characterized in that: The end side wall is slidably fitted with at least a portion of the side wall at the top of the shaft body, and the outlet of the self-rotation driving airway located on the side wall at the top of the shaft body is communicated with the inlet located on the end side wall; During the process of the free end portion being lifted relative to the movable end portion, the outlet of the self-rotation driving air passage located at the top side wall of the shaft body is communicated with the inlet located at the end side wall.

17. The vapor deposition chamber according to claim 15, characterized in that: There is a gap between the end side wall and the top side wall of the shaft body, and the outlet of the self-rotation driving airway located on the top side wall of the shaft body is opposite to the inlet located on the end side wall; During the process of the free end portion being lifted relative to the movable end portion, the outlet of the self-rotation driving air passage located at the top side wall of the shaft body is communicated with the inlet located at the end side wall.

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