Process optimization method and system for discrete device, terminal and storage medium

Abstract

The invention relates to a process optimization method and system for a discrete device, a terminal and a storage medium, and relates to the technical field of semiconductor device tests.The method comprises the steps that in the testing process of the discrete device, timestamp data of the discrete device and temperature data associated with the timestamp data are collected; through a thermal analysis algorithm, the timestamp data and the temperature data are integrated, physical characteristics of the discrete device are obtained, and the physical characteristics are used for representing temperature change conditions of all positions of the discrete device; performing visualization processing on the physical characteristics to obtain a temperature distribution image of the discrete device; and according to the temperature distribution image and the physical characteristics, a process optimization suggestion is generated. The method has the effect of simplifying the process optimization flow of the discrete device.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor device testing, and in particular, to a process optimization method, system, terminal, and storage medium for discrete devices. Background Art

[0002] Discrete devices (such as transistors, diodes, resistors, capacitors, etc.) play a fundamental role in electronic circuits. Testing and optimizing discrete devices is a crucial part of the electronic design and manufacturing process, which can ensure that the devices can work properly and meet the design requirements in the final application. Therefore, optimizing the process according to the test results of discrete devices can guarantee the circuit performance, reliability, and safety.

[0003] In the related art for testing discrete devices, test data is used to determine whether the quality of the discrete device meets the design requirements. If not, multiple test parameters after various tests of the discrete device will be statistically analyzed. Then, multiple test parameters are used to determine the defects of the discrete device, and process improvements are made for the defects.

[0004] Regarding the above related art, the process of optimizing the process requires relevant personnel to process a large number of test parameters, and the whole process is too cumbersome and complex. Summary of the Invention

[0005] In order to simplify the process optimization process of discrete devices, the present application provides a process optimization method, system, terminal, and storage medium for discrete devices.

[0006] In a first aspect, the present application provides a process optimization method for discrete devices, adopting the following technical solution: A process optimization method for discrete devices includes: During the testing of the discrete device, collecting the timestamp data of the discrete device and the temperature data associated with the timestamp data; Integrating the timestamp data and the temperature data through a thermal analysis algorithm to obtain the physical characteristics of the discrete device, where the physical characteristics are used to represent the temperature change situation at each part of the discrete device; Performing visualization processing on the physical characteristics to obtain the temperature distribution image of the discrete device; Generating process optimization opinions based on the temperature distribution image and the physical characteristics.

[0007] By adopting the above technical solution, the physical characteristics of the discrete device are obtained through a thermal analysis algorithm, and visualization processing is performed on the physical characteristics to obtain the temperature distribution image during the discrete period. And process optimization opinions are generated from the temperature distribution image and the physical characteristics, which simplifies the process optimization process and improves the efficiency of optimizing the process.

[0008] Optionally, according to the temperature distribution image, determine a first high-temperature region on the discrete device where the temperature is greater than a preset upper temperature limit value; According to the physical characteristics, calculate the temperature change rate at each location on the discrete device; According to the temperature change rate, determine a second high-temperature region on the discrete device where the temperature change rate is greater than a preset change rate threshold; According to the positions of the first high-temperature region and the second high-temperature region in the discrete device, generate the process optimization opinion, where the process optimization opinion is used to indicate adding a heat dissipation structure on the high-temperature region, and the high-temperature region includes the first high-temperature region and the second high-temperature region.

[0009] By adopting the above technical solution, determine the first high-temperature region and the second high-temperature region on the discrete device through the temperature distribution image, and put forward process optimization opinions for the two high-temperature regions, and add a heat dissipation structure on the high-temperature region, so that the process of the discrete device is optimized, which not only ensures the quality of the discrete device, but also improves the optimization efficiency of the discrete device process.

[0010] Optionally, when the high-temperature region is located inside the discrete device, determine a low-temperature region on the discrete device where the temperature is less than a preset lower temperature limit value; Calculate the actual distance from the low-temperature region to the high-temperature region; According to the actual distance, determine a target low-temperature region in the low-temperature region, where the actual distance from the target low-temperature region to the high-temperature region is less than a preset distance threshold; Plan the path from the high-temperature region to the target low-temperature region to generate the coverage area of the heat dissipation structure; Generate the process optimization opinion according to the coverage area.

[0011] By adopting the above technical solution, transfer the heat in the high-temperature region to the target low-temperature region through the heat dissipation structure, realize the cooling of the high-temperature region, ensure the product quality of the discrete device, and provide a method for quickly giving process optimization suggestions, improving the efficiency and simplicity of process optimization.

[0012] Optionally, when the high-temperature region and the target low-temperature region are located in different layers of the discrete device, count the device components between the high-temperature region and the target low-temperature region; Obtain the shape information and position information of the device components; According to the shape information and the position information, plan a path from the high-temperature region to the target low-temperature region, such that the distance between any point on the path and the device element is greater than a preset lower limit value of the distance, to obtain the coverage area; generate the process optimization opinion according to the coverage area, and the process optimization opinion is used to indicate to set a heat dissipation structure on the coverage area.

[0013] By adopting the above technical solution, different types of heat dissipation structures are set according to the different situations of some devices, which improves the universality of the present solution, enables it to be applied to various types of classified devices, and will not cause a great impact on discrete devices, ensuring their normal operation.

[0014] Optionally, when the high-temperature region and the target low-temperature region are located in the same functional region of the discrete device, obtain the high-temperature heat source corresponding to the high-temperature region and the low-temperature heat source corresponding to the target low-temperature region; If the high-temperature heat source is the same as the low-temperature heat source, obtain the heat source position of the high-temperature heat source; generate the process optimization opinion according to the heat source position, and the process optimization opinion is used to indicate to add a heat dissipation structure at the heat source position; If the high-temperature heat source is different from the low-temperature heat source, obtain the path starting point according to the temperature distribution in the peripheral range of the high-temperature heat source; obtain the path end point according to the temperature distribution in the peripheral range of the low-temperature heat source; plan the coverage area according to the path starting point and the path end point; generate the process optimization opinion according to the coverage area, and the process optimization opinion is used to indicate to set a heat dissipation structure on the coverage area.

[0015] By adopting the above technical solution, different process optimization opinions are set according to the actual situations of the high-temperature region and the target low-temperature region, enabling the process optimization opinion to adapt to different situations, and ensuring the rationality and feasibility of the process optimization opinion.

[0016] Optionally, when there are at least two high-temperature heat sources, obtain the temperature conduction path of the high-temperature heat source, and obtain the actual temperature distribution of the temperature conduction path; Taking the first high-temperature heat source as the heat source, calculate the temperature conduction situation on the temperature conduction path to obtain the theoretical temperature distribution on the temperature conduction path; Calculate the similarity between the actual temperature distribution and the theoretical temperature distribution; When the similarity is less than a preset similarity threshold, compare the actual temperature distribution with the theoretical temperature distribution to obtain a target region, where the temperature difference between the actual temperature distribution and the theoretical temperature distribution in the target region is greater than a preset temperature threshold, and the area of the target region is greater than a preset area; Use the high-temperature heat source closest to the target area as the second high-temperature heat source; Generate the process optimization opinion according to the positions of the first high-temperature heat source and the second high-temperature heat source, where the process optimization opinion is used to indicate to set a heat insulation structure between the first high-temperature heat source and the second high-temperature heat source.

[0017] By adopting the above technical solution, in the case of multiple high-temperature heat sources, when the similarity between the actual temperature distribution and the theoretical temperature distribution is less than the preset similarity threshold, a heat insulation structure is set between the first high-temperature heat source and the second high-temperature heat source to avoid thermal coupling between the first high-temperature heat source and the second high-temperature heat source and ensure the quality of discrete devices.

[0018] Optionally, obtain the first temperature of the candidate area in the first test environment and the second temperature of the candidate area in the second test environment; If the first temperature is greater than the preset temperature upper limit value and the second temperature is less than the preset temperature upper limit value, generate the circuit working difference of the candidate area according to the difference between the first test environment and the second test environment; Generate the overheating cause according to the circuit working difference; Update the manufacturing process of the discrete device according to the overheating cause.

[0019] By adopting the above technical solution, based on the circuit working differences in different prediction environments, judge the overheating cause of the discrete device, and update the process according to the overheating cause.

[0020] In a second aspect, the present application provides a process optimization system for discrete devices, adopting the following technical solution: A process optimization system for discrete devices, comprising: An acquisition module, configured to acquire timestamp data, temperature data, a preset temperature upper limit value, a preset change rate threshold, a preset temperature lower limit value, device components, shape information, position information, a first temperature, and a second temperature; A memory, configured to store the program of the process optimization method for discrete devices in any one of the above; A processor, the program in the memory can be loaded and executed by the processor and implement the process optimization method for discrete devices in any one of the above.

[0021] By adopting the above technical solution, obtain the physical characteristics of the discrete device through a thermal analysis algorithm, perform visual processing on the physical characteristics, and obtain the temperature distribution image during the discrete period. And generate a process optimization opinion from the temperature distribution image and the physical characteristics, simplifying the process optimization process and improving the efficiency of optimizing the process.

[0022] In a third aspect, the present application provides an intelligent terminal, adopting the following technical solution: An intelligent terminal includes a memory and a processor. A computer program that can be loaded and executed by the processor is stored on the memory and can implement any one of the above methods.

[0023] In a fourth aspect, the present application provides a computer storage medium that can store a corresponding program and is characterized by facilitating the implementation of the process optimization flow of simplified discrete devices. The following technical solution is adopted: A computer-readable storage medium stores a computer program that can be loaded and executed by a processor to implement any one of the above process optimization methods for discrete devices.

[0024] In summary, the present application includes at least one of the following beneficial technical effects: 1. Obtain the physical characteristics of discrete devices through a thermal analysis algorithm, perform visualization processing on the physical characteristics to obtain a temperature distribution image during the discrete period, and generate process optimization opinions from the temperature distribution image and physical characteristics, simplifying the process optimization flow and improving the efficiency of the optimization process; 2. Determine the first high-temperature region and the second high-temperature region on the discrete device through the temperature distribution image, propose process optimization opinions for the two high-temperature regions, and add heat dissipation structures to the high-temperature regions to optimize the process of the discrete device, ensuring both the quality of the discrete device and improving the optimization efficiency of the discrete device process; 3. Transfer the heat in the high-temperature region to the target low-temperature region through the heat dissipation structure, achieving the cooling of the high-temperature region, ensuring the product quality of the discrete device, and providing a method for quickly giving process optimization suggestions, improving the efficiency and simplicity of the process optimization. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 is a flowchart showing a process optimization method for a discrete device disclosed in an embodiment of the present application.

[0026] Figure 2 is a flowchart showing a method for generating process optimization opinions disclosed in an embodiment of the present application.

[0027] Figure 3 is a flowchart showing a heat transfer method for a discrete device disclosed in an embodiment of the present application.

[0028] Figure 4 is a flowchart showing a method for setting a heat dissipation structure disclosed in an embodiment of the present application.

[0029] Figure 5 is a flowchart showing a process optimization method for a multi-heat-source discrete device disclosed in an embodiment of the present application.

[0030] Figure 6 It is a schematic flow chart of a process optimization method with multiple heat sources disclosed in an embodiment of the present application.

[0031] Figure 7 It is a schematic flow chart of a process optimization method under multiple test scenarios disclosed in an embodiment of the present application.

[0032] Figure 8 It is a schematic structural diagram of a process optimization system for discrete devices disclosed in an embodiment of the present application. Detailed implementation manners

[0033] In order to make the objectives, technical solutions and advantages of the present application more clear and understandable, the following further describes the present application in detail with reference to the Figures 1 to 8 accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0034] An embodiment of the present application discloses a schematic flow chart of a process optimization method for discrete devices. Referring to Figure 1 , the method includes: Step S101: During the testing of discrete devices, collect the timestamp data of the discrete devices and the temperature data associated with the timestamp data.

[0035] Discrete devices refer to basic electronic components that exist independently in an electronic circuit and perform specific functions. Optionally, discrete devices include, but are not limited to, sensors, diodes, transistors, optoelectronic devices, operational amplifiers, comparators, etc.

[0036] The testing of discrete devices includes, but is not limited to, performance testing, safety testing, reliability testing, environmental stress testing, mechanical testing, electromagnetic compatibility testing, etc. Further, for the same type of testing, different discrete devices may adopt different specific testing methods.

[0037] The temperature data records the temperature of the discrete device at a specific timestamp. Optionally, the temperature data is the temperature on the surface of the discrete device. Optionally, the temperature data is the temperature at a specific point on the discrete device.

[0038] Exemplarily, when a testing machine tests a discrete device, an infrared sensor is used to detect the temperature on the surface of the discrete device to obtain temperature data. And the moment when the temperature data is obtained is recorded as the timestamp data.

[0039] Exemplarily, when a testing machine tests a discrete device, the temperature at a specific point on the discrete device is obtained through a temperature sensor to obtain temperature data. And the moment when the temperature data is obtained is recorded as the timestamp data.

[0040] Step S102: Integrate the timestamp data and the temperature data through a thermal analysis algorithm to obtain the physical characteristics of the discrete device. The physical characteristics are used to represent the temperature changes at various locations of the discrete device.

[0041] The thermal analysis algorithm is used to calculate the transfer path of thermal resistance in discrete devices, so as to obtain the heat transfer of the entire discrete device. Exemplarily, the thermal analysis algorithm is the Rthtools algorithm. Further, the Rthtools algorithm includes the following steps: Establish a thermal model of the discrete device, which describes the connection relationship, material composition and position relationship of each component in the discrete device. Calculate the thermal resistance of the thermal model. Calculate the temperature change value of each component based on the thermal resistance. Combine the temperature change values ​​of each component to obtain the physical properties. Among them, the thermal resistance can be determined by literature data, experimental data or simulation tools. The temperature change value ΔT=P×Rth, P is the power loss of the component, and Rth is the thermal resistance.

[0042] Step S103: Visualize the physical characteristics to obtain a temperature distribution image of the discrete device.

[0043] Visualization is used to convert physical properties into visual graphs or images for more intuitive understanding and analysis.

[0044] Optionally, a physical model of the discrete device is established, and the physical model is used to describe the physical structure of the discrete device. A position mapping relationship is established between the physical characteristics and the physical model, so that the temperature change in the physical characteristics is mapped to the same position on the physical model. A temperature-color mapping relationship is established so that positions with different temperatures present different colors. The position mapping relationship and the temperature-color mapping relationship are combined to obtain a temperature distribution image of the discrete device, so that the temperature change is presented at each position of the physical model, and the temperature change is reflected by color, which is convenient for relevant personnel to observe.

[0045] Step S104: Generate process optimization suggestions based on the temperature distribution image and physical characteristics.

[0046] In some embodiments, a first similarity between the temperature distribution image and the historical temperature distribution image is calculated, and a second similarity between the physical property and the historical physical property is calculated, and the historical temperature distribution image is associated with the historical physical property. When the first similarity is less than a first similarity threshold and the second similarity is less than a second similarity threshold, the historical process optimization opinion of the historical temperature distribution image is used as the process optimization opinion used in this step.

[0047] By adopting the above technical solution, the physical characteristics of discrete devices are obtained through a thermal analysis algorithm, and the physical characteristics are visualized to obtain the temperature distribution image during the discrete period. And process optimization opinions are generated from the temperature distribution image and physical characteristics, simplifying the process optimization process and improving the efficiency of optimizing the process.

[0048] In the following embodiments, process optimization opinions are generated based on the temperature distribution image and discrete devices, and the process optimization opinions will indicate to set a heat dissipation structure at specific positions. The flowchart of a method for generating process optimization opinions according to an embodiment of the present application is shown. Refer to Figure 2 , the method includes: Step S201: According to the temperature distribution image, determine the first high-temperature region on the discrete device where the temperature is greater than the preset temperature upper limit value.

[0049] The preset temperature upper limit value is related to the type of discrete device and the region where the temperature is located. Exemplarily, look up the temperature threshold table corresponding to the type of discrete device in the database, and the temperature threshold table records the preset temperature upper limit values of each region on a specific type of discrete device. Combining the temperature distribution image with the temperature threshold table, search and determine the first high-temperature region in the temperature distribution image where the temperature is greater than the preset temperature upper limit value.

[0050] Step S202: According to the physical characteristics, calculate the temperature change rate at each location on the discrete device.

[0051] Exemplarily, for a specific point on the discrete device, look up the first temperature data and the second temperature data corresponding to adjacent timestamp data in the physical characteristics. Calculate the difference between the first temperature data and the second temperature data to obtain the temperature data difference. Calculate the difference between the above adjacent timestamp data to obtain the time difference. Calculate the ratio of the temperature data difference to the time difference to obtain the temperature change rate at the specific point.

[0052] Step S203: According to the temperature change rate, determine the second high-temperature region on the discrete device where the temperature change rate is greater than the preset change rate threshold.

[0053] The preset change rate threshold is related to the type of discrete device and the region where the temperature is located.

[0054] Step S204: Generate a process optimization opinion according to the positions of the first high-temperature region and the second high-temperature region in the discrete device. The process optimization opinion is used to indicate adding a heat dissipation structure on the high-temperature region, and the high-temperature region includes the first high-temperature region and the second high-temperature region.

[0055] Optionally, the heat dissipation structure includes at least one of a heat sink, a heat pipe, a micro fan, a graphite heat sink, and a heat dissipation channel.

[0056] Exemplarily, according to the area of the high-temperature region, a heat sink is installed at the high-temperature region, and the area of the heat sink is larger than the area of the high-temperature region. Exemplarily, the central position of the high-temperature region is determined, one end of a heat pipe is set at the central position, and the other end of the heat pipe is set outside the discrete device.

[0057] By adopting the above technical solution, the first high-temperature region and the second high-temperature region on the discrete device are determined through the temperature distribution image, and process optimization opinions are proposed for the two high-temperature regions. A heat dissipation structure is added to the high-temperature region, so that the process of the discrete device is optimized, which not only ensures the quality of the discrete device but also improves the optimization efficiency of the discrete device process.

[0058] In the following embodiments, when the high-temperature region is located inside the discrete device, since the internal structure of some discrete devices is relatively complex, it is difficult to design a structure that can transfer heat to the outside of the discrete device. Therefore, the embodiment of the present application discloses a flowchart of a heat transfer method for a discrete device. Refer to Figure 3 , the method includes: Step S301: When the high-temperature region is located inside the discrete device, determine the low-temperature region on the discrete device where the temperature is lower than the preset lower temperature limit value.

[0059] Optionally, when the high-temperature region is not on the surface of the discrete device, it is considered that the high-temperature region is located inside the discrete device. Optionally, when the shortest distance between the high-temperature region and the surface of the discrete device is greater than the preset distance value, it is considered that the high-temperature region is located inside the discrete device.

[0060] The preset lower temperature limit value is less than the preset upper temperature limit value, and the difference between the preset upper temperature limit value and the preset lower temperature limit value is greater than the preset difference. For example, the preset upper temperature limit value is 80 degrees, and the preset lower temperature limit value is 40 degrees or less.

[0061] Step S302: Calculate the actual distance from the low-temperature region to the high-temperature region.

[0062] There is at least one low-temperature region.

[0063] Step S303: Determine the target low-temperature region in the low-temperature region according to the actual distance, and the actual distance from the target low-temperature region to the high-temperature region is less than the preset distance threshold.

[0064] Optionally, if there are multiple low-temperature regions that meet the conditions, select the low-temperature region closest to the high-temperature region as the target low-temperature region.

[0065] In some other embodiments, screening can also be performed based on the area of the low-temperature region. For example, when the actual distance between multiple low-temperature regions is less than a preset distance threshold, calculate the actual area of each low-temperature region. Perform a weighted operation based on the actual area and the actual distance to obtain the weight value of each low-temperature region. Select the low-temperature region with the largest weight value as the target low-temperature region.

[0066] Step S304: Plan the path from the high-temperature region to the target low-temperature region to generate the coverage area of the heat dissipation structure.

[0067] In some embodiments, the path from the high-temperature region to the target low-temperature region is obtained through a path algorithm. Determine the components of the discrete devices located on the path, and set the path width according to the arrangement of the components. The path width ensures that the coverage area of the path does not contact the components.

[0068] Step S305: Generate process optimization suggestions based on the coverage area.

[0069] The process optimization suggestions are used to set a heat conduction path on the coverage area so that the heat in the high-temperature region is conducted to the target low-temperature region through the heat conduction path.

[0070] By adopting the above technical solutions, the heat in the high-temperature region is transferred to the target low-temperature region through the heat dissipation structure, achieving the cooling of the high-temperature region, ensuring the product quality of the discrete devices, and providing a method for quickly giving process optimization suggestions, improving the efficiency and simplicity of process optimization.

[0071] In Figure 3 the illustrated embodiment, the heat dissipation structure will conduct the heat in the high-temperature region. Therefore, when designing the coverage area of the heat dissipation structure, it is necessary to consider whether the area through which the heat dissipation structure passes will affect other components in the discrete devices. The present application discloses a flow chart of a method for setting a heat dissipation structure. Refer to Figure 4 , the method includes: Step S401: When the high-temperature region and the target low-temperature region are located in different layers of the discrete device, count the device components between the high-temperature region and the target low-temperature region.

[0072] Optionally, the layers of the discrete device include at least one of a chip layer, an interface layer, a packaging layer, a heat dissipation layer, an electrical connection layer, and a surface layer.

[0073] Optionally, the device components include, but are not limited to, pins, PN junctions, conductive layers, etc.

[0074] Optionally, set the connection line from the high-temperature region to the target low-temperature region. Obtain each component within the discrete device. Calculate the shortest distance from each component to the aforementioned connection line. Select the components with the shortest distance less than the preset distance value as the device components.

[0075] Step S402: Obtain the shape information and position information of the device components.

[0076] The shape information is used to describe the shape of the device components.

[0077] The position information is used to describe the position of the device components in the discrete device.

[0078] In some embodiments, a physical model of the discrete device is established. The shape and position of the device components are determined in the physical model to obtain the shape information and position information. Among them, the shape information records the surface shape of the device components, and the position information records the coordinates of each point on the surface of the device components.

[0079] Step S403: According to the shape information and position information, plan a path from the high-temperature region to the target low-temperature region, so that the distance between any point on the path and the device components is greater than a preset lower limit value of the distance, and obtain a coverage area.

[0080] The preset lower limit value of the distance is a preset empirical value. Relevant personnel can adjust the specific value of the preset lower limit value of the distance according to actual needs.

[0081] Optionally, according to the shape information and position information, determine the occupied space of the device components in the physical model. Set the occupied space as a prohibited area, and set the space in the physical model except the prohibited area as a permitted area. Use a path planning algorithm to process the data of the prohibited area and the permitted area to obtain a path from the high-temperature region to the target low-temperature region.

[0082] Step S404: Generate process optimization opinions according to the coverage area. The process optimization opinions are used to indicate to set a heat dissipation structure on the coverage area.

[0083] The area of the heat dissipation structure is larger than the coverage area, and the heat dissipation structure completely covers the above-mentioned coverage area.

[0084] By adopting the above technical solution, different types of heat dissipation structures are set according to the different situations of some devices, which improves the universality of the present solution, enables it to be applied to various types of classified devices, and will not cause a great impact on the discrete device, ensuring its normal operation.

[0085] In the following embodiments, since the high-temperature region and the target low-temperature region in the discrete device are relatively close, the heat sources of the two may be the same or may be the same. For the above two different situations, different heat dissipation structures need to be selected. Therefore, the embodiments of the present application disclose a flow schematic diagram of a process optimization method for a multi-heat-source discrete device. Refer to Figure 5 , the method includes: Step S501: When the high-temperature region and the target low-temperature region are in the same functional area of the discrete device, obtain the high-temperature heat source corresponding to the high-temperature region and the low-temperature heat source corresponding to the target low-temperature region.

[0086] The high-temperature heat source refers to the heat source that causes temperature changes in the high-temperature region. The low-temperature heat source refers to the heat source that causes temperature changes in the low-temperature region. The high-temperature heat source and the low-temperature heat source can be the same heat source or different heat sources.

[0087] In some embodiments, determine the candidate heat sources of the discrete device from the database. Take the candidate heat source located in the high-temperature region as the high-temperature heat source. Take the candidate heat source located in the low-temperature region as the low-temperature heat source.

[0088] In some embodiments, determine the candidate heat sources of the discrete device from the database and calculate the influence range of the candidate heat sources. Take the candidate heat source with the largest overlapping range between the high-temperature region and the influence range as the high-temperature heat source. Take the candidate heat source with the largest overlapping range between the low-temperature region and the influence range as the low-temperature heat source.

[0089] Step S502: If the high-temperature heat source is the same as the low-temperature heat source, obtain the heat source position of the high-temperature heat source.

[0090] When the high-temperature heat source and the low-temperature heat source are the same, it means that the temperature changes in both the high-temperature region and the target low-temperature region are caused by the same heat source. However, due to reasons such as the heat conduction path and heat conduction efficiency from the high-temperature heat source to the two regions, the temperatures of the high-temperature region and the low-temperature region are different.

[0091] Step S503: Generate process optimization suggestions according to the heat source position. The process optimization suggestions are used to indicate adding a heat dissipation structure at the heat source position.

[0092] When the high-temperature heat source and the low-temperature heat source are the same, it is not appropriate to set a heat dissipation structure between the high-temperature region and the target low-temperature region, that is, it is not appropriate to conduct the heat in the high-temperature region to the target low-temperature region through the heat conduction path. This is because the temperatures of both the high-temperature region and the target low-temperature region are caused by the high-temperature heat source. Even if a heat conduction path is established between the two regions, it will not have a great impact on the heat dissipation effect of the discrete device. Therefore, in this embodiment, a heat dissipation structure will be added at the heat source position of the high-temperature heat source to ensure the heat dissipation effect at the high-temperature heat source.

[0093] Step S504: If the high-temperature heat source is different from the low-temperature heat source, obtain the path starting point according to the temperature distribution in the peripheral range of the high-temperature heat source.

[0094] Form a first sphere with the high-temperature heat source as the center and a preset length as the radius. Determine the high-temperature device element corresponding to the high-temperature heat source in the physical model. Take the intersection of the aforementioned first sphere and the high-temperature device element to obtain the peripheral range of the high-temperature heat source.

[0095] Exemplarily, according to the temperature distribution in the peripheral range of the high-temperature heat source, determine the highest temperature point within the peripheral range of the high-temperature heat source; use the highest temperature point as the starting point of the path.

[0096] Exemplarily, perform temperature clustering calculation on the peripheral range of the high-temperature heat source according to the temperature distribution in the peripheral range of the high-temperature heat source to obtain a temperature aggregation region, where the temperature clustering calculation is used to cluster points that are adjacent in space and close in temperature. Determine the first temperature aggregation region with the highest average temperature in the temperature aggregation region. Use the center point of the first temperature aggregation region as the starting point of the path.

[0097] Step S505: Obtain the end point of the path according to the temperature distribution in the peripheral range of the low-temperature heat source.

[0098] Form a second sphere with the low-temperature heat source as the center and a preset length as the radius. Determine the low-temperature device element corresponding to the low-temperature heat source in the physical model. Take the intersection of the aforementioned second sphere and the low-temperature device element to obtain the peripheral range of the low-temperature heat source.

[0099] Exemplarily, according to the temperature distribution in the peripheral range of the low-temperature heat source, determine the lowest temperature point within the peripheral range of the low-temperature heat source; use the highest temperature point as the end point of the path.

[0100] Exemplarily, perform temperature clustering calculation on the peripheral range of the low-temperature heat source according to the temperature distribution in the peripheral range of the low-temperature heat source to obtain a temperature aggregation region. Determine the second temperature aggregation region with the lowest average temperature in the temperature aggregation region. Use the center point of the second temperature aggregation region as the end point of the path.

[0101] Step S506: Plan the coverage area according to the starting point and the end point of the path.

[0102] Exemplarily, through a path planning algorithm, plan the path between the starting point and the end point of the path so that the coverage area does not pass through the device elements in the discrete device, and the shortest distance between the coverage area and the device elements is not less than a preset distance value.

[0103] Step S507: Generate process optimization opinions according to the coverage area, and the process optimization opinions are used to indicate to set a heat dissipation structure on the coverage area.

[0104] Exemplarily, set a heat dissipation path through the coverage area, and conduct heat conduction from the high-temperature area to the target low-temperature area through the heat dissipation path.

[0105] By adopting the above technical solutions, different process optimization opinions are set according to the actual situations of the high-temperature area and the target low-temperature area, enabling the process optimization opinions to adapt to different situations and ensuring the rationality and feasibility of the process optimization opinions.

[0106] In the following embodiments, when there are multiple high-temperature heat sources in the high-temperature heat source, the interaction and influence between different heat sources need to be considered. Therefore, the embodiment of the present application discloses a flow schematic diagram of a process optimization method for multiple heat sources. Refer to Figure 6 , the method includes: Step S601: When there are at least two high-temperature heat sources, obtain the temperature conduction path of the high-temperature heat source and obtain the actual temperature distribution of the temperature conduction path.

[0107] The temperature conduction path refers to the path through which heat in a discrete device reaches the surrounding environment through the chip material. Among them, the temperature conduction path includes internal heat conduction and heat dissipation paths. Internal heat conduction is the heat conduction caused by the material of the discrete device. In some embodiments, a physical model of the discrete device is established. In the physical model, according to the types and materials of each device element, a temperature conduction path is generated. For example, in the physical model, a device element made of a metal material is determined, and this kind of device element serves as the temperature conduction path.

[0108] Optionally, in the physical properties, determine the path region corresponding to the temperature conduction path, and search for the temperature data of the path region in the physical properties to obtain the actual temperature distribution of the temperature conduction path.

[0109] Step S602: Using the first high-temperature heat source as the heat source, calculate the temperature conduction situation on the temperature conduction path to obtain the theoretical temperature distribution on the temperature conduction path.

[0110] The first high-temperature heat source is any one of at least two high-temperature heat sources.

[0111] Optionally, using the first high-temperature heat source as the heat source, through a thermal analysis algorithm, calculate the temperature conduction situation on the temperature conduction path to obtain the theoretical temperature distribution on the temperature conduction path.

[0112] Step S603: Calculate the similarity between the actual temperature distribution and the theoretical temperature distribution.

[0113] Exemplarily, calculate the cosine similarity of the temperatures at the same position of the actual temperature distribution and the theoretical temperature distribution, and sum the calculated cosine similarities to obtain the similarity.

[0114] Exemplarily, calculate the Euclidean distance of the temperatures at the same position of the actual temperature distribution and the theoretical temperature distribution, and sum the calculated Euclidean distances to obtain the similarity.

[0115] Step S604: When the similarity is less than the preset similarity threshold, compare the actual temperature distribution with the theoretical temperature distribution to obtain a target region, where the temperature difference between the actual temperature distribution and the theoretical temperature distribution in the target region is greater than the preset temperature threshold, and the area of the target region is greater than the preset area.

[0116] The preset similarity threshold is a preset empirical value. Relevant personnel can adjust the specific value of the preset similarity threshold according to actual needs. On the other hand, the preset temperature threshold and the preset area are also preset empirical values, and relevant personnel can adjust the specific values ​​of the preset temperature threshold and the preset area according to actual needs.

[0117] When the similarity is less than the preset similarity threshold, it means that the actual temperature distribution of the first high-temperature heat source is too different from the theoretical temperature distribution, and the temperature conduction path is affected by other high-temperature heat sources.

[0118] Step S605: Use the high-temperature heat source closest to the target area as the second high-temperature heat source.

[0119] In some other embodiments, a sphere is formed with the target area as the center and a predetermined length value as the radius, and a high-temperature heat source located in the sphere is determined to obtain a candidate high-temperature heat source. The distance value from the candidate high-temperature heat source to the target area is calculated, and the temperature value of the candidate high-temperature heat source is obtained. The distance value is normalized to obtain a normalized distance value, and the temperature value is normalized to obtain a normalized temperature value. A weighted operation is performed on the normalized distance value and the normalized temperature value to obtain a weighted value of the candidate high-temperature personnel. The candidate high-temperature heat source with the largest weighted value is taken as the second high-temperature heat source.

[0120] Step S606: Generate process optimization suggestions based on the positions of the first high-temperature heat source and the second high-temperature heat source, where the process optimization suggestions are used to indicate setting a heat insulation structure between the first high-temperature heat source and the second high-temperature heat source.

[0121] The above steps show that the first high temperature heat source and the second high temperature heat source will affect each other, and the combined action of the two will produce a thermal coupling effect, causing the temperature of the high temperature area to further rise. Therefore, it is necessary to set up a heat insulation structure to prevent the interaction between the first high temperature heat source and the second high temperature heat source, and avoid the occurrence of thermal coupling effect as much as possible.

[0122] By adopting the above technical solution, when there are multiple high-temperature heat sources, when the similarity between the actual temperature distribution and the theoretical temperature distribution is less than a preset similarity threshold, an insulation structure will be set between the first high-temperature heat source and the second high-temperature heat source to avoid thermal coupling between the first high-temperature heat source and the second high-temperature heat source, thereby ensuring the quality of discrete devices.

[0123] In the following embodiments, different areas of the same discrete device will present different temperature distributions in different test scenarios, so the optimization of the discrete device also needs to consider the particularity of the test scenario. Therefore, the embodiment of the present application discloses a flow chart of a process optimization method under multiple test scenarios. Figure 7 , the method comprising: Step S701: Obtain the first temperature of the candidate area in the first test environment and the second temperature of the candidate area in the second test environment.

[0124] The first test environment and the second test environment are different test environments. For example, the first test environment is used to test the performance of discrete devices, and the second test environment is used to test the safety during the discrete period.

[0125] Step S702: If the first temperature is greater than the preset temperature upper limit value and the second temperature is less than the preset temperature upper limit value, generate a circuit operation difference of the candidate area according to the difference between the first test environment and the second test environment.

[0126] Optionally, determine the first working element of the discrete device in the first test environment and the second working element of the discrete device in the second test environment. Compare the differences between the first working element and the second working element to obtain the different working elements. Determine the different working elements located in the candidate area to obtain the circuit operation difference of the candidate area.

[0127] Step S703: Generate an overheating cause according to the circuit operation difference.

[0128] Optionally, according to the circuit operation difference, determine the target circuit structure that works in the first test environment and has not worked in the second test environment. Generate the overheating cause based on the working mode of the target circuit structure.

[0129] Step S704: Update the manufacturing process of the discrete device according to the overheating cause.

[0130] Optionally, determine the target manufacturing process corresponding to the target circuit structure according to the overheating cause. Adjust the process parameters of the target manufacturing process. For example, increase the area of the target circuit structure, adjust the material of the target circuit structure, etc.

[0131] By adopting the above technical solution, based on the circuit operation differences in different prediction environments, judge the overheating cause of the discrete device, and update the process according to the overheating cause.

[0132] Based on the same inventive concept, an embodiment of the present application provides a process optimization system for discrete devices. Please refer to Figure 8 , including: An acquisition module 801, configured to acquire timestamp data, temperature data, a preset temperature upper limit value, a preset change rate threshold, a preset temperature lower limit value, device components, shape information, position information, the first temperature, and the second temperature; A memory 802, configured to store the program of the process optimization method for the discrete device in any one of the above; The processor 803 can load and execute the program in the memory to implement the process optimization method for discrete devices in any of the above.

[0133] In summary, the physical characteristics of discrete devices are obtained through a thermal analysis algorithm, and the physical characteristics are visualized to obtain the temperature distribution image during the discrete period. And process optimization opinions are generated from the temperature distribution image and physical characteristics, simplifying the process optimization flow and improving the efficiency of the optimization process.

[0134] Those skilled in the art can clearly understand that for the convenience and simplicity of description, only the above division of each functional module is used as an example. In actual applications, the above functions can be allocated to different functional modules as needed, that is, the internal structure of the device is divided into different functional modules to complete all or part of the functions described above. The specific working processes of the systems, devices, and units described above can refer to the corresponding processes in the foregoing method embodiments and will not be elaborated herein.

[0135] The embodiment of the present application provides a computer-readable storage medium storing a computer program that can be loaded and executed by a processor to implement the process optimization method for discrete devices.

[0136] Computer storage media include, for example: various media such as USB flash drives, mobile hard disks, read-only memories (ROM), random access memories (RAM), magnetic disks, or optical discs that can store program codes.

[0137] Based on the same inventive concept, the embodiment of the present application provides an intelligent terminal including a memory and a processor, and a computer program that can be loaded and executed by the processor to implement the process optimization method for discrete devices is stored on the memory.

[0138] Those skilled in the art can clearly understand that for the convenience and simplicity of description, only the above division of each functional module is used as an example. In actual applications, the above functions can be allocated to different functional modules as needed, that is, the internal structure of the device is divided into different functional modules to complete all or part of the functions described above. The specific working processes of the systems, devices, and units described above can refer to the corresponding processes in the foregoing method embodiments and will not be elaborated herein.

[0139] The above are all the preferred embodiments of the present application. Without limiting the protection scope of the present application accordingly, any feature disclosed in this specification (including the abstract and drawings), unless specifically stated, can be replaced by other equivalent or similar-purpose alternative features. That is, unless specifically stated, each feature is only an example of a series of equivalent or similar features.

Claims

1. A process optimization method for discrete devices, characterized in that: The method comprises: During the testing of the discrete device, collecting timestamp data of the discrete device and temperature data associated with the timestamp data; Integrating the timestamp data and the temperature data through a thermal analysis algorithm to obtain physical characteristics of the discrete device, wherein the physical characteristics are used to represent temperature changes at various locations of the discrete device; Performing visualization processing on the physical characteristics to obtain a temperature distribution image of the discrete device; A process optimization suggestion is generated according to the temperature distribution image and the physical characteristics.

2. The process optimization method for discrete devices according to claim 1, characterized in that: Generating process optimization suggestions according to the temperature distribution image and the physical characteristics includes: Determining, according to the temperature distribution image, a first high temperature region on the discrete device having a temperature greater than a preset temperature upper limit value; Calculating the temperature change rate at each location on the discrete device according to the physical characteristics; According to the temperature change rate, determining a second high temperature region on the discrete device where the temperature change rate is greater than a preset change rate threshold; The process optimization suggestion is generated according to the positions of the first high temperature region and the second high temperature region in the discrete device, and the process optimization suggestion is used to indicate adding a heat dissipation structure on the high temperature region, and the high temperature region includes the first high temperature region and the second high temperature region.

3. The process optimization method for discrete devices according to claim 2, characterized in that: The method further comprises: In the case where the high temperature region is located inside the discrete device, determining a low temperature region on the discrete device whose temperature is lower than a preset temperature lower limit; Calculating the actual distance from the low temperature area to the high temperature area; Determine a target low-temperature region in the low-temperature region according to the actual distance, wherein the actual distance from the target low-temperature region to the high-temperature region is less than a preset distance threshold; Planning a path from the high temperature area to the target low temperature area to generate a coverage area of ​​the heat dissipation structure; The process optimization suggestion is generated according to the coverage area.

4. The process optimization method for discrete devices according to claim 3, characterized in that: The planning of the path from the high temperature area to the target low temperature area to generate the coverage area of ​​the heat dissipation structure includes: In a case where the high temperature region and the target low temperature region are located at different levels of the discrete device, counting the device elements between the high temperature region and the target low temperature region; Acquiring shape information and position information of the device element; According to the shape information and the position information, a path from the high temperature area to the target low temperature area is planned so that the distance between any point on the path and the device element is greater than a preset distance lower limit, thereby obtaining the coverage area; and the process optimization opinion is generated according to the coverage area, and the process optimization opinion is used to indicate setting a heat dissipation structure on the coverage area.

5. The process optimization method for discrete devices according to claim 3, characterized in that: The method further comprises: When the high temperature region and the target low temperature region are located in the same functional region of the discrete device, obtaining a high temperature heat source corresponding to the high temperature region and a low temperature heat source corresponding to the target low temperature region; If the high-temperature heat source is the same as the low-temperature heat source, obtaining the heat source position of the high-temperature heat source; generating the process optimization suggestion according to the heat source position, wherein the process optimization suggestion is used to indicate adding a heat dissipation structure at the heat source position; If the high-temperature heat source is different from the low-temperature heat source, the starting point of the path is obtained according to the temperature distribution around the high-temperature heat source; the end point of the path is obtained according to the temperature distribution around the low-temperature heat source; the coverage area is planned according to the starting point of the path and the end point of the path; the process optimization opinion is generated according to the coverage area, and the process optimization opinion is used to indicate the setting of a heat dissipation structure on the coverage area.

6. The process optimization method for discrete devices according to claim 5, characterized in that: The method further comprises: When there are at least two high-temperature heat sources, obtaining a temperature conduction path of the high-temperature heat source and obtaining an actual temperature distribution of the temperature conduction path; Taking the first high temperature heat source as the heat source, calculating the temperature conduction condition on the temperature conduction path, and obtaining the theoretical temperature distribution on the temperature conduction path; Calculating the similarity between the actual temperature distribution and the theoretical temperature distribution; When the similarity is less than a preset similarity threshold, the actual temperature distribution is compared with the theoretical temperature distribution to obtain a target area, the temperature difference between the actual temperature distribution and the theoretical temperature distribution in the target area is greater than a preset temperature threshold, and the area of ​​the target area is greater than a preset area; using the high temperature heat source closest to the target area as the second high temperature heat source; The process optimization suggestion is generated according to the positions of the first high-temperature heat source and the second high-temperature heat source, and the process optimization suggestion is used to indicate that a heat insulation structure is set between the first high-temperature heat source and the second high-temperature heat source.

7. The process optimization method for discrete devices according to claim 2, characterized in that: The method further comprises: Acquire a first temperature of a candidate area under a first test environment, and a second temperature of the candidate area under a second test environment; If the first temperature is greater than the preset temperature upper limit value and the second temperature is less than the preset temperature upper limit value, generating a circuit operation difference of the candidate area according to a difference between the first test environment and the second test environment; generating an overheating cause based on the circuit operation difference; The manufacturing process of the discrete device is updated according to the overheating cause.

8. A discrete device process optimization system, characterized in that: The system comprises: An acquisition module, used to acquire timestamp data, temperature data, a preset temperature upper limit value, a preset change rate threshold, a preset temperature lower limit value, device elements, shape information, position information, a first temperature, and a second temperature; A memory, used to store a program of a process optimization method for discrete devices according to any one of claims 1 to 7; The program in the memory can be loaded and executed by the processor and implement the process optimization method of the discrete device as described in any one of claims 1 to 7.

9. An intelligent terminal, characterized in that: The method comprises a memory and a processor, wherein the memory stores a computer program that can be loaded by the processor and execute the method according to any one of claims 1 to 7.

10. A computer-readable storage medium, characterized in that: A computer program is stored which can be loaded by a processor and execute the method according to any one of claims 1 to 7.

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