Vertical cavity surface emitting laser and manufacturing method thereof

Abstract

The invention discloses a vertical cavity surface emitting laser and a manufacturing method thereof, which can be used in the field of semiconductor devices, and the laser comprises a substrate, an epitaxial structure and a mode control structure, the epitaxial structure comprises a first type reflector layer, an active layer, a photoelectric limiting layer and a second type reflector layer which are sequentially arranged on the substrate; the photoelectric limiting layer is used for limiting a light-emitting aperture of the vertical-cavity surface-emitting laser; the mode control structure is arranged on the first type reflector layer and / or the second type reflector layer, at least part of the structure is in electrical contact with the first type reflector layer and / or the second type reflector layer, and the mode control structure is configured to introduce a pumping source related to the shape of a light-emitting aperture to the first type reflector layer and / or the second type reflector layer; therefore, the vertical cavity surface emitting laser does not emit laser light or emits less laser light at the preset point position of the light-emitting aperture. Therefore, the laser lasing state is controlled through the mode control structure, and the reliability of the laser chip is improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor devices, and particularly to a vertical cavity surface emitting laser and a manufacturing method thereof. Background Art

[0002] A vertical cavity surface emitting laser (VCSEL) is a unique semiconductor laser. With its unique vertical structure, high performance, and low cost, it has shown great potential in consumer electronics, communication, and emerging fields.

[0003] Existing vertical cavity surface emitting lasers generally consist of P-type and N-type mirrors, a single-layer circular or square mesa or multiple channels, and an oxidation confinement layer formed by wet oxidation from the mesa sidewall inward. In the vertical cavity surface emitting laser with this structure, there is a high free carrier absorption in the P-type ohmic contact and current diffusion layer, as well as uncontrolled current injection caused by the low mobility of the P-type semiconductor, which leads to the problem of unreliability of the vertical cavity surface emitting laser chip.

[0004] Therefore, how to improve the reliability of the vertical cavity surface emitting laser chip is an urgent problem to be solved by those skilled in the art. Summary of the Invention

[0005] Based on the above problems, the present application provides a vertical cavity surface emitting laser and a manufacturing method thereof, which control the laser lasing state through a mode control structure and improve the reliability of the laser chip.

[0006] In a first aspect, an embodiment of the present application provides a vertical cavity surface emitting laser, including: a substrate, an epitaxial structure, and a mode control structure; the epitaxial structure includes a first-type mirror layer, an active layer, a photoelectric confinement layer, and a second-type mirror layer sequentially disposed on the substrate; the photoelectric confinement layer is used to define the light emitting aperture of the vertical cavity surface emitting laser; The mode control structure is disposed on the first-type mirror layer and / or the second-type mirror layer, and at least part of the structure is in electrical contact with the first-type mirror layer and / or the second-type mirror layer. The mode control structure is configured to introduce a pump source related to the shape of the light emitting aperture to the first-type mirror layer and / or the second-type mirror layer, so that the vertical cavity surface emitting laser does not lase or less lases at a preset position of the light emitting aperture.

[0007] Optionally, the preset position is a position where high-order mode laser is generated by applying a current exceeding a preset threshold current to the vertical cavity surface emitting laser; and / or The preset threshold current is greater than or equal to 6 mA.

[0008] Optionally, the light-emitting aperture includes any one of an oval shape, a diamond shape, and a spindle shape.

[0009] Optionally, the mode control structure includes ohmic contact metal, and the ohmic contact metal is in electrical contact with the first type of mirror layer and / or the second type of mirror layer; The ohmic contact metal is discontinuous or does not provide pump source injection at the preset point.

[0010] Optionally, when the ohmic contact metal is discontinuous at the preset point, the ohmic contact metal includes at least two metal parts, and each metal part is uniformly distributed along the light-emitting aperture.

[0011] Optionally, the light-emitting aperture is oval, and the ohmic contact metal includes two metal parts, which are respectively arranged on both sides of the short axis of the oval.

[0012] Optionally, when the ohmic contact metal does not provide pump source injection at the preset point, the vertical cavity surface emitting laser further includes an insulating layer disposed between the ohmic contact metal and the epitaxial structure; The insulating layer is correspondingly disposed at the preset point; and / or The insulating layer is formed by deposition or ion implantation.

[0013] In a second aspect, an embodiment of the present application provides a manufacturing method of a vertical cavity surface emitting laser for manufacturing the above-mentioned vertical cavity surface emitting laser, including: Providing a substrate; Successively forming a first type of mirror layer, an active layer, a photoelectric confinement layer, and a second type of mirror layer on the substrate to obtain an epitaxial structure; Fabricating a mode control structure on the first type of mirror layer and / or the second type of mirror layer, at least part of the mode control structure is in electrical contact with the first type of mirror layer and / or the second type of mirror layer, and the mode control structure is configured to introduce a pump source related to the shape of the light-emitting aperture to the first type of mirror layer and / or the second type of mirror layer, so that the vertical cavity surface emitting laser does not lasing or less lasing at the preset point of the light-emitting aperture.

[0014] In a third aspect, an embodiment of the present application provides an optical module, including the vertical cavity surface emitting laser as described above.

[0015] In a fourth aspect, an embodiment of the present application provides an optical chip, and the above-mentioned vertical cavity surface emitting laser is integrally arranged on the optical chip.

[0016] It can be seen from the above technical solutions that compared with the prior art, the present application has the following advantages: A vertical cavity surface emitting laser provided by the present application includes: a substrate, an epitaxial structure, and a mode control structure; the epitaxial structure includes a first type mirror layer, an active layer, a photoelectric confinement layer, and a second type mirror layer sequentially disposed on the substrate; the photoelectric confinement layer is used to define the light emitting aperture of the vertical cavity surface emitting laser; the mode control structure is disposed on the first type mirror layer and / or the second type mirror layer, and at least part of the structure is in electrical contact with the first type mirror layer and / or the second type mirror layer. The mode control structure is configured to introduce a pump source related to the shape of the light emitting aperture to the first type mirror layer and / or the second type mirror layer, so that the vertical cavity surface emitting laser does not lasing or less lasing laser at a preset position of the light emitting aperture. Thus, by controlling the laser lasing state through the mode control structure, the reliability of the laser chip is improved. Description of the Drawings

[0017] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0018] Figure 1 It is a schematic structural diagram of a vertical cavity surface emitting laser provided by an embodiment of the present application; Figure 2 It is a top view of a mode control structure provided by an embodiment of the present application; Figure 3 It is a cross-sectional schematic diagram of a mode control structure provided by an embodiment of the present application; Figure 4 It is a top view of an ohmic contact metal provided by an embodiment of the present application; Figure 5 It is a top view of an N-type electrode layer provided by an embodiment of the present application; Figure 6 It is a schematic structural diagram of an insulating layer provided by an embodiment of the present application; Figure 7 It is a flowchart of a manufacturing method of a vertical cavity surface emitting laser provided by an embodiment of the present application. Detailed Embodiments

[0019] As described above, the existing vertical cavity surface emitting laser structure has the problem of relatively low reliability. Specifically, a conventional vertical cavity surface emitting laser generally consists of P-type and N-type mirrors, a single-layer circular or square mesa or multiple channels, and an oxidation confinement layer formed by wet oxidation from the mesa sidewalls inward. In this structure of vertical cavity surface emitting laser, there is high free carrier absorption in the P-type ohmic contact and current spreading layer, as well as uncontrolled current injection caused by the low mobility of the P-type semiconductor, which restricts the mode selection, polarization control, and thermal optimization of the laser emission, thus leading to the problem of unreliable vertical cavity surface emitting laser chips.

[0020] To solve the above problems, an embodiment of the present application provides a vertical cavity surface emitting laser and a manufacturing method thereof. The vertical cavity surface emitting laser includes: a substrate, an epitaxial structure, and a mode control structure; the epitaxial structure includes a first-type mirror layer, an active layer, a photoconfinement layer, and a second-type mirror layer sequentially disposed on the substrate; the photoconfinement layer is used to define the light emitting aperture of the vertical cavity surface emitting laser; the mode control structure is disposed on the first-type mirror layer and / or the second-type mirror layer, and at least part of the structure is in electrical contact with the first-type mirror layer and / or the second-type mirror layer. The mode control structure is configured to introduce a pump source related to the shape of the light emitting aperture to the first-type mirror layer and / or the second-type mirror layer, so that the vertical cavity surface emitting laser does not emit or emits less laser at a preset position of the light emitting aperture.

[0021] In this way, by controlling the laser emission state through the mode control structure, the reliability of the laser chip is improved.

[0022] It should be noted that a vertical cavity surface emitting laser and a manufacturing method thereof provided by the present application can be applied to the field of semiconductor devices. The above is only an example and does not limit the application field of a vertical cavity surface emitting laser and a manufacturing method thereof provided by the present application.

[0023] In order to make the objectives, technical solutions, and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present application.

[0024] Figure 1 This is a schematic structural diagram of a vertical cavity surface emitting laser provided by an embodiment of the present application. Combining Figure 1As shown, the vertical cavity surface emitting laser includes: a substrate 600, an epitaxial structure, and a mode control structure 100; the epitaxial structure includes a first type mirror layer 500, an active layer 400, a photoelectric confinement layer 300, and a second type mirror layer 200 that are sequentially disposed on the substrate 600; the photoelectric confinement layer 300 is used to define the light emitting aperture of the vertical cavity surface emitting laser; The mode control structure 100 is disposed on the first type mirror layer 500 and / or the second type mirror layer 200, and at least part of the structure is in electrical contact with the first type mirror layer 500 and / or the second type mirror layer 200. The mode control structure 100 is configured to introduce a pump source related to the shape of the light emitting aperture to the first type mirror layer 500 and / or the second type mirror layer 200, so that the vertical cavity surface emitting laser does not lasing or less lasing at a preset position of the light emitting aperture.

[0025] Specifically, the epitaxial structure provided in the embodiment of the present application mainly includes an N-type distributed Bragg reflector (DBR) layer, that is, the first type mirror layer 500, an active layer 400 composed of a multiple quantum well (MQW) layer and a cladding layer, Al 0.98 Ga 0.02 As photoelectric confinement layer 300 and a P-type DBR layer (second type mirror layer 200). Figure 2 The top view of a mode control structure provided by the embodiment of the present application. Combine Figure 2As shown, the mode control structure 100 is configured to introduce a pump source related to the shape of the light-emitting aperture into the mirror layer, thereby causing less or no lasing at a preset position of the light-emitting aperture. The preset position is a position where high-order mode laser is generated by applying a current exceeding a preset threshold current to the vertical cavity surface emitting laser. Generally, the preset threshold current is greater than or equal to 6 mA. Exemplarily, the preset threshold current can be 6 mA, or the preset threshold current can be 7 mA, or the preset threshold current can be 8 mA. It can be understood that if the mode control structure 100 only adopts a design of a concentric ring or elliptical ring with the light-emitting hole, which is the same as the prior art, the introduction of the pump source cannot be controlled, and thus it is impossible to make the vertical cavity surface emitting laser less or not lasing at the preset position of the light-emitting aperture. For this reason, the embodiment of the present application provides a mode control structure 100. By means of layout design, an injection control structure of the pump source is formed on the surface of the second-type mirror layer 200. Injecting carriers (holes) from the mode control structure 100 into the device can achieve controlling the injection, recombination, and formation of spontaneous emission of carriers in a plane perpendicular to the laser propagation direction, so that the vertical cavity surface emitting laser less or not lasing at the preset position of the light-emitting aperture, and after reaching the threshold, generating the process of stimulated emission. The channel 800 is used to oxidize a part of the structure of the second-type mirror layer 200 to obtain the optical confinement layer 300. In addition, the N-type electrode layer 700 is disposed on the substrate 600 on the same side as the first-type mirror layer 500, and can correspond to the mode control structure 100, and also realizes the control of the introduction of the pump source through layout design.

[0026] Figure 3 It is a cross-sectional schematic diagram of a mode control structure provided by an embodiment of the present application. Figure 4 It is a top view of an ohmic contact metal provided by an embodiment of the present application. Combining Figure 3 and Figure 4 As shown, the mode control structure 100 includes an ohmic contact metal, and the ohmic contact metal is in electrical contact with the first-type mirror layer 500 and / or the second-type mirror layer 200; The ohmic contact metal is discontinuous or does not provide pump source injection at the preset position.

[0027] Specifically, the ohmic contact metal refers to the segmented P-type electrode layer 120. On this basis, the vertical cavity surface emitting laser may further include a P-type electrode metal 110. The segmented P-type electrode layer 120 is disposed on the surface of the second type of mirror layer 200. The P-type electrode metal 110 fills the channel 800 and is connected to the segmented P-type electrode layer 120 through a through hole of ohmic contact, and is discontinuous or does not provide pump source injection at a preset position. In addition, the embodiment of the present application further adds a P-type pad 130, which can be connected to the segmented P-type electrode layer 120 through the P-type electrode metal 110. With such a design, on the one hand, the segmented P-type electrode layer 120 can achieve uniform current redistribution and low free carrier absorption under balanced high conductivity (low series resistance), thereby effectively selecting and controlling the high-order mode lasing mode and polarization state. On the other hand, through the P-type pad 130, that is, the P-type contact electrode as the inlet of electrode injection, the contact resistance can be reduced, the joule heat loss can be reduced, and the electro-optical conversion efficiency can be improved.

[0028] As an implementation manner, for how to design the ohmic contact metal, when the ohmic contact metal is discontinuous at the preset position, the ohmic contact metal includes at least two metal parts, and each of the metal parts is uniformly distributed along the emission aperture.

[0029] Specifically, the segmented P-type electrode layer 120 provided in the embodiment of the present application can be formed by breaking a ring-shaped or a ring-shaped P-type electrode with a notch into two or more segments of electrodes (that is, setting two or more P-electrode ohmic contact regions, and the width and azimuth angle of each segment of electrode can be adjusted according to the device performance). In this way, the control of the laser emission state can be realized. It can be understood that the segmented P-type electrode layer 120 can also be designed in other shapes or other numbers of segments, that is, the electrode in the direction where the light intensity is higher is retained, and generally the retained electrode part is uniformly distributed along the emission aperture. In summary, the design of the segmented P-type electrode layer 120 provided in the embodiment of the present application takes into account the collateral benefits of minimizing parasitic capacitance resistance, improving the device bandwidth, and reducing the relative intensity noise (RIN).

[0030] In addition, the emission aperture may specifically include any one of an oval shape, a diamond shape, and a spindle shape.

[0031] As an implementation manner, when the emission aperture is oval, the ohmic contact metal includes two metal parts, and the two metal parts are respectively disposed on both sides of the short axis of the oval.

[0032] Specifically, in order to increase the bandwidth, means such as reducing the oxidation aperture, using a non-circular oxidation aperture, and adopting a photoelectric confinement layer 300 with a gradually changing thickness can be used. The embodiment of the present application provides an oval emission aperture, by using Al0.98 Ga 0.02 It is formed by partial oxidation on the GaAs optical confinement layer 300. Combining Figure 4 As shown, the segmented P-type electrode layer 120 in the ohmic contact metal can be a two-segment electrode arrangement, and the two segments of electrodes are respectively arranged on both sides of the short axis of the elliptical light-emitting aperture. Thus, since the distribution of the spontaneous emission intensity under high current injection in the plane perpendicular to the laser emission direction has the most direct influence on the position and mode distribution of the stimulated emission, through the anisotropy of the mode control structure 100 combined with the elliptical light-emitting aperture, as well as other polarization control means such as surface microstructure gratings, the selection of the stimulated emission mode and polarization control are finally realized.

[0033] As an implementation manner, regarding how to design the channel 800, the above-mentioned channel 800 is a broken ring design, including at least four segments. In this specific embodiment, the channel 800 is four segments, and the four segments of the channel 800 are evenly distributed. Through the four evenly distributed segments of the channel 800, an approximately elliptical light-emitting aperture can be formed during wet oxidation. It can be understood that in other embodiments, when a light-emitting aperture of a corresponding shape is required, the number and setting position of the channel 800 can also be selected and adjusted, and the present application is not limited thereto.

[0034] Furthermore, in order to improve the heat dissipation performance of the device, an insulating layer (not shown in the figure) can be filled on the surface of the channel 800 first, and then a metal material can be filled on this basis. Among them, the filled metal material can be the same as the P-type electrode metal 110.

[0035] Figure 5 This is a top view of an N-type electrode layer provided by an embodiment of the present application. Combining Figure 5 As shown, the N-type electrode layer 700 is a C-shaped design.

[0036] Specifically, the design concept of the mode control structure 100 can also be applied to the N-type electrode layer 700. An embodiment of the present application provides a design of the N-type electrode layer 700, which is C-shaped in top view. Similar to the P-electrode design, the C-shaped N-type electrode layer 700 can reduce parasitic capacitance resistance, improve the device bandwidth, and reduce the additional benefit of RIN.

[0037] As an implementation manner, regarding how to control the pump source injection, when the ohmic contact metal does not provide pump source injection at the preset point, the vertical cavity surface emitting laser further includes an insulating layer provided between the ohmic contact metal and the epitaxial structure; The insulating layer is correspondingly provided at the preset point; and / or The insulating layer is formed by deposition or ion implantation.

[0038] Specifically, Figure 6A schematic structural diagram of an insulating layer provided by an embodiment of the present application. In combination with Figure 6 As shown, an insulating layer 900 such as SiN or SiO2 can be selectively laid at preset positions by deposition under the annular P electrode and the C-shaped N electrode, so as to further improve the current injection effect, achieve the purpose of controlling the laser lasing state, and further improve the carrier injection and recombination efficiency, slope efficiency, bandwidth and reliability of the vertical cavity surface emitting laser. In addition, in order to control the laser lasing state and improve the carrier injection and recombination efficiency, slope efficiency, bandwidth and reliability of the vertical cavity surface emitting laser. The sidewalls of the channel 800 and the semiconductor material under the electrode can also be selectively damaged by O2 plasma implantation at preset positions to make it an insulating material, thereby forming an insulating layer and changing the current injection channel.

[0039] In summary, a vertical cavity surface emitting laser provided by the present application includes: a substrate, an epitaxial structure and a mode control structure; the epitaxial structure includes a first-type mirror layer, an active layer, a photoelectric confinement layer and a second-type mirror layer sequentially arranged on the substrate; the photoelectric confinement layer is used to define the light-emitting aperture of the vertical cavity surface emitting laser; the mode control structure is arranged on the first-type mirror layer and / or the second-type mirror layer, and at least part of the structure is in electrical contact with the first-type mirror layer and / or the second-type mirror layer, and the mode control structure is configured to introduce a pump source related to the shape of the light-emitting aperture to the first-type mirror layer and / or the second-type mirror layer, so that the vertical cavity surface emitting laser does not lasing or less lasing at preset positions of the light-emitting aperture. In this way, the laser lasing state is controlled by the mode control structure, and the reliability of the laser chip is improved.

[0040] Figure 7 A flowchart of a manufacturing method of a vertical cavity surface emitting laser provided by an embodiment of the present application. In combination with Figure 7 As shown, the method includes: S1: Provide a substrate, and sequentially form a first-type mirror layer, an active layer, a photoelectric confinement layer and a second-type mirror layer on the substrate to obtain an epitaxial structure.

[0041] In practical applications, first, an epitaxial structure is constructed, and an N-type DBR layer (first-type mirror layer), an active layer composed of a multi-quantum well MQW layer and a cladding layer, Al 0.98 Ga 0.02 As photoelectric confinement layer and P-type DBR layer (second-type mirror layer) are sequentially stacked on the bottom N-type substrate layer. Among them, the Al 0.98 Ga 0.02 As photoelectric confinement layer is arranged in the multi-layer structure of the P-type DBR layer.

[0042] S2: Fabricate a mode control structure on the first type of mirror layer and / or the second type of mirror layer. At least part of the structure of the mode control structure is in electrical contact with the first type of mirror layer and / or the second type of mirror layer. The mode control structure is configured to introduce a pump source related to the shape of the light-emitting aperture to the first type of mirror layer and / or the second type of mirror layer, so that the vertical cavity surface emitting laser does not emit or emits less laser at a preset position of the light-emitting aperture.

[0043] Specifically, the embodiment of the present application provides a possible process for fabricating a mode control structure, as shown in S201 - S204.

[0044] S201: Etch the epitaxial structure to obtain a channel; the channel penetrates the second type of mirror layer, the active layer, and the optical confinement layer, and the bottom of the channel stays inside the first type of mirror layer.

[0045] In practical applications, first, a channel shape is lithographed on the surface of the P-type DBR layer, and then reactive ion etching (RIE) is performed on it. The etching process needs to penetrate the P-type DBR layer and the active layer from top to bottom in sequence and stay in the multi-layer structure of the N-type DBR layer.

[0046] S202: Partially oxidize the high-aluminum component layer (Al 0.98 Ga 0.02 As) in the P-type DBR layer to form an optical confinement layer, and define a non-circular light-emitting aperture through the optical confinement layer.

[0047] In practical applications, based on wet oxidation, in a high-temperature cavity, through a mixed gas of N2 and water vapor, the high-aluminum component layer in the P-type DBR layer is oxidized to g-Al2O3, and a non-circular light-emitting aperture is formed.

[0048] S203: Form a segmented P-type electrode layer on the second type of mirror layer.

[0049] In practical applications, before generating the segmented P-type electrode layer, atomic layer deposition can be performed through Al2O3 or plasma enhanced chemical vapor deposition can be performed through SiN / SiO2 to deposit an insulating layer on the surface of the P-type DBR layer and the inner surface of the channel for passivation first. Then, a pattern is lithographed in the target position area of the segmented P-type electrode layer and an opening etching of the passivation layer is performed. Further, the segmented P-type electrode layer is formed by evaporation / sputtering and stripping, and finally, plasma enhanced chemical vapor deposition is performed through SiN / SiO2 to continue depositing an insulating layer on the chip surface and the inner surface of the channel for passivation.

[0050] S204: Fill the channel with P-type electrode metal to form an ohmic contact with the segmented P-type electrode layer; form a P-type pad on the P-type electrode metal.

[0051] In practical applications, first, lithography and etching are required to open the segmented P-type electrode layer for subsequent ohmic contact with the P-type electrode metal. After etching, P-type electrode metal lithography is carried out, and then P-type electrode metal is formed on the surface of the channel and the P-type DBR layer by deposition (evaporation / sputtering), electroplating, etc., and an ohmic contact between the segmented P-type electrode layer and the P-type electrode metal is achieved. After that, atomic layer deposition of Al2O3 is continued on the surface of the P-type DBR layer to form passivation. Finally, a P-type pad is formed by lithography and etching. The P-type pad, as the inlet for electrode injection, can reduce the contact resistance, reduce Joule heat loss, and improve the electro-optical conversion efficiency.

[0052] S3: Form an N-type electrode layer on the substrate layer, and form an N-type pad on the N-type electrode layer.

[0053] In practical applications, first, mesa fabrication is carried out by lithography and etching down to the N-GaAs substrate. Then, pattern lithography of the N electrode is carried out on the N-GaAs substrate, and then a C-shaped N-type electrode layer is formed by deposition (evaporation / sputtering), electroplating, etc. and annealed to form ohmic contact alloying. In addition, in order to reduce the contact resistance, reduce Joule heat loss, and improve the electro-optical conversion efficiency, an N-type pad can also be set on the N-type electrode layer by lithography and etching.

[0054] In summary, a manufacturing method of a vertical cavity surface emitting laser provided by an embodiment of the present application includes: providing a substrate; sequentially forming a first-type mirror layer, an active layer, a photoelectric confinement layer, and a second-type mirror layer on the substrate to obtain an epitaxial structure; etching the epitaxial structure to obtain a channel; the channel penetrates the second-type mirror layer, the active layer, and the photoelectric confinement layer, and the bottom of the channel stays inside the first-type mirror layer; partially oxidizing the photoelectric confinement layer to form a non-circular light-emitting aperture; forming a segmented P-type electrode layer on the second-type mirror layer; filling the channel with P-type electrode metal to form an ohmic contact with the segmented P-type electrode layer; forming a P-type pad on the P-type electrode metal; forming an N-type electrode layer on the substrate, and forming an N-type pad on the N-type electrode layer. In this way, the laser lasing state is controlled by the mode control structure, and the reliability of the laser chip is improved.

[0055] In addition, an embodiment of the present application provides an optical module, and the optical module includes the vertical cavity surface emitting laser as described above.

[0056] In addition, an embodiment of the present application provides an optical chip, on which the vertical cavity surface emitting laser as described above is integrally arranged.

[0057] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present application. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application will not be limited to the embodiments shown herein, but will be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A vertical cavity surface emitting laser, characterized in that Comprising: a substrate, an epitaxial structure, and a mode control structure; the epitaxial structure includes a first-type mirror layer, an active layer, a photoelectric confinement layer, and a second-type mirror layer sequentially disposed on the substrate; the photoelectric confinement layer is used to define the light-emitting aperture of the vertical cavity surface emitting laser; the mode control structure is disposed on the first-type mirror layer and / or the second-type mirror layer, and at least part of the structure is in electrical contact with the first-type mirror layer and / or the second-type mirror layer. The mode control structure is configured to introduce a pump source related to the shape of the light-emitting aperture to the first-type mirror layer and / or the second-type mirror layer, so that the vertical cavity surface emitting laser does not lasing or less lasing at a preset position of the light-emitting aperture.

2. The vertical cavity surface emitting laser according to claim 1, wherein The preset position is the position where high-order mode laser is generated by applying a current exceeding a preset threshold current to the vertical cavity surface emitting laser; and / or The preset threshold current is greater than or equal to 6 mA.

3. The vertical cavity surface emitting laser according to claim 2, characterized in that, The light-emitting aperture includes any one of an ellipse, a diamond, and a spindle.

4. The vertical cavity surface emitting laser according to claim 3, wherein The mode control structure includes an ohmic contact metal that is in electrical contact with the first-type mirror layer and / or the second-type mirror layer; The ohmic contact metal is discontinuous or does not provide pump source injection at the preset position.

5. The vertical cavity surface emitting laser according to claim 4, wherein When the ohmic contact metal is discontinuous at the preset position, the ohmic contact metal includes at least two metal parts, and each metal part is uniformly distributed along the light-emitting aperture.

6. The vertical cavity surface emitting laser according to claim 5, characterized in that, The light-emitting aperture is an ellipse, and the ohmic contact metal includes two metal parts, which are respectively arranged on both sides of the short axis of the ellipse.

7. The vertical cavity surface emitting laser according to claim 4, characterized in that, When the ohmic contact metal does not provide pump source injection at the preset position, the vertical cavity surface emitting laser further includes an insulating layer disposed between the ohmic contact metal and the epitaxial structure; The insulating layer is correspondingly disposed at the preset position; and / or The insulating layer is formed by deposition or ion implantation.

8. A manufacturing method of a vertical cavity surface emitting laser, characterized in that, A method for manufacturing a vertical cavity surface emitting laser as claimed in claim 1, the method comprising: providing a substrate; forming a first-type mirror layer, an active layer, a photoelectric confinement layer, and a second-type mirror layer on the substrate in sequence to obtain an epitaxial structure; fabricating a mode control structure on the first-type mirror layer and / or the second-type mirror layer, at least part of the structure of the mode control structure is in electrical contact with the first-type mirror layer and / or the second-type mirror layer, and the mode control structure is configured to introduce a pump source related to the shape of the light-emitting aperture to the first-type mirror layer and / or the second-type mirror layer, so that the vertical cavity surface emitting laser does not lasing or less lasing at a preset position of the light-emitting aperture.

9. An optical module, characterized in that, Comprising a vertical cavity surface emitting laser as claimed in any one of claims 1-7.

10. An optical chip, characterized in that, The vertical cavity surface emitting laser as claimed in any one of claims 1-7 is integrally provided on the optical chip.

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