Preparation method of lossless patterned two-dimensional material
By preparing patterned two-dimensional materials on the sacrificial substrate and using support layer transfer technology, the problem of dielectric layer damage during the patterning of two-dimensional semiconductor materials is solved, and lossless and high-quality patterned two-dimensional material preparation is achieved, improving device performance.
Patent Information
- Application Number
- CN202510371203.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-27
- Publication Date
- 2025-06-27
AI Technical Summary
The prior art has damaged the dielectric layer by a high-energy process during the patterning of two-dimensional semiconductor materials, resulting in uneven material thickness and defects, affecting device performance.
Patterned two-dimensional material is prepared on a sacrificial substrate and then introduced a support layer to transfer the patterned two-dimensional material to the target substrate, avoiding direct damage to the dielectric layer by the high-energy process.
The lossless patterning of two-dimensional materials is realized, the high quality and integrity of the materials are ensured, and the comprehensive performance of two-dimensional electronic devices is improved.
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Figure CN120224751A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of two-dimensional semiconductor materials, and in particular to a lossless two-dimensional material patterning preparation method. Background Art
[0002] Two-dimensional semiconductor materials, with their unique electrical properties and broad application prospects as channel materials in the next generation of miniaturized electronic devices, are gradually becoming a hot topic and core focus of exploration in the field of scientific research. However, to successfully transform this cutting-edge technology into practical applications, we face a key technical challenge: developing efficient and non-destructive nanopatterning technology. This is because two-dimensional semiconductor materials are usually prepared by methods such as micromechanical exfoliation or chemical vapor deposition (CVD), and their shapes and thicknesses are often random or even uneven. However, in the actual electronic device manufacturing process, in order to meet the specific functional requirements and performance standards of the device, we must process the two-dimensional semiconductor materials into precise patterns and shapes.
[0003] Patterning technology, as an advanced process that can precisely manipulate the shape, size and arrangement of materials at the nanoscale, is the key to achieving this goal. It not only ensures the precise positioning of two-dimensional semiconductor materials in devices, but also effectively improves the integration and performance of devices. At present, although there are some two-dimensional material patterning technologies based on silicon-based manufacturing processes, such as mask technologies such as photolithography and electron beam exposure, and removal processes such as plasma etching and reactive ion etching, these technologies often have problems such as damage to the dielectric layer during high-energy processes, resulting in uneven thickness and a large number of defects, thereby affecting the improvement of device performance. This phenomenon is particularly evident for two-dimensional material electronic devices. Therefore, achieving lossless patterning of two-dimensional materials is a scientific problem that needs to be solved urgently. Summary of the invention
[0004] The purpose of the present invention is to provide a method for preparing a low-damage, high-precision patterned two-dimensional material to solve the problems existing in the above-mentioned prior art and enable lossless patterning of two-dimensional materials.
[0005] In order to achieve the above object, the present invention provides the following technical solutions:
[0006] The present invention provides a non-destructive method for preparing a patterned two-dimensional material, comprising the following steps: (1) preparing a two-dimensional material on a sacrificial substrate; (2) patterning the two-dimensional material; (3) preparing a support layer on the sacrificial substrate; (4) transferring the two-dimensional material on the sacrificial substrate to the support layer; (5) transferring the two-dimensional material on the support layer to a target substrate; and (6) removing the support layer to obtain the patterned two-dimensional material.
[0007] Compared with the process of directly patterning two-dimensional materials on a target substrate in the prior art, in the present invention, a patterned two-dimensional material is first prepared on a sacrificial substrate, and then a support layer is introduced as a dielectric layer to transfer the patterned two-dimensional material to the target substrate, avoiding damage to the dielectric layer during the high-energy process and thus avoiding the generation of defects. This low-damage and high-precision patterning process is beneficial to improving the comprehensive performance of two-dimensional electronic devices.
[0008] Preferably, the method for preparing the two-dimensional material on the sacrificial substrate in step (1) includes a micro-mechanical exfoliation method, a CVD growth method, or a PVD growth method.
[0009] Preferably, the patterning process of the two-dimensional material in step (2) is divided into two steps: exposure and etching. The exposure includes electron beam exposure or ultraviolet exposure; the etching includes plasma etching or wet etching using a chemical solution.
[0010] More preferably, the gas flow rate for plasma etching is: the oxygen flow rate is 5 sccm - 20 sccm, such as in the range of 5 sccm, 15 sccm, 20 sccm, and any combination thereof.
[0011] As another preference, the gas flow rate for plasma etching is: the argon flow rate is 5 sccm - 20 sccm, such as in the range of 5 sccm, 15 sccm, 20 sccm, and any combination thereof.
[0012] As another preference, the gas flow rate for plasma etching is: the SF6 oxygen flow rate is 5 sccm - 10 sccm, such as in the range of 10 sccm, 15 sccm, 20 sccm, and any combination thereof.
[0013] More preferably, the power for plasma etching is 3 - 20 W, such as in the range of 5 W, 10 W, 15 W, and any combination thereof.
[0014] More preferably, the plasma etching time range is 5 - 10 s, such as in the range of 5 s, 8 s, 10 s, and any combination thereof.
[0015] Preferably, the method for preparing the support layer in step (3) is: using a spin coater to spin coat a support layer material solution on the sacrificial substrate with the patterned two-dimensional material, drying after spin coating, and continuously spin coating 3 - 4 layers.
[0016] Preferably, the rotation speed for spin coating is 1000 - 3000 revolutions per minute, the spin coating time for each layer is 30 - 60 s, the drying temperature is 60 - 120 °C, and the drying time is 10 - 60 s.
[0017] Preferably, the two-dimensional material transfer method in steps (4) and (5) includes PDMS-assisted transfer method, gold-assisted transfer method, water-assisted transfer method or wet etching transfer method.
[0018] Preferably, the method for removing the support layer in step (6) is to immerse the target substrate with the transferred two-dimensional material in step (5) in an acetone solution, then take it out and heat it to remove the support layer.
[0019] Preferably, the heating temperature is 95°C - 120°C and the heating time is 15 min - 20 min.
[0020] Preferably, the sacrificial substrate is one of a silicon oxide substrate, a hafnium oxide substrate or a sapphire substrate.
[0021] Preferably, the two-dimensional material is one of graphene, molybdenum disulfide, molybdenum diselenide, tungsten disulfide, tungsten diselenide or molybdenum ditelluride.
[0022] Preferably, the support layer is one of PMMA (polymethyl methacrylate), PPC (polyethylene carbonate) or PVA (polyvinyl chloride).
[0023] The present invention also provides a patterned two-dimensional material prepared by the method for preparing a non-destructively patterned two-dimensional material as described above.
[0024] The present invention also provides an application of the patterned two-dimensional material in the technical field of processing two-dimensional devices.
[0025] The present invention discloses the following technical effects:
[0026] 1. By replacing the substrate, the present invention avoids damage to the dielectric layer during the patterning process of two-dimensional materials, ensuring a non-destructively patterned two-dimensional material;
[0027] 2. The present invention uses a support layer to transfer the patterned two-dimensional material. The support layer is easily removed, ensuring the integrity of the high-quality patterned two-dimensional material and the cleanliness and pollution-free of the two-dimensional material interface. BRIEF DESCRIPTION OF THE DRAWINGS
[0028] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for use in the embodiments. Obviously, the following described drawings are only some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.
[0029] Figure 1 It is a process flow chart of the method for preparing a non-destructively patterned two-dimensional material of the present invention.
[0030] Figure 2The sacrificial substrate prepared for step (2) in Example 1.
[0031] Figure 3 Transfer the two-dimensional WSe2 to the sacrificial substrate for step (2) in Example 1.
[0032] Figure 4 The patterning process of two-dimensional WSe2 on the sacrificial substrate for Example 1.
[0033] Figure 5 The patterned two-dimensional WSe2 on the support layer for Example 1.
[0034] Figure 6 The target substrate for Example 1.
[0035] Figure 7 The patterned two-dimensional WSe2 transferred to the target substrate for Example 1.
[0036] Figure 8 The optical microscope image of the patterned two-dimensional WSe2 transistor for Example 1.
[0037] Figure 9 The performance of the patterned two-dimensional WSe2 transistor for Example 1.
[0038] Figure 10 The patterned two-dimensional WSe2 on BN for Example 2.
[0039] Figure 11 The directly patterned two-dimensional WSe2 for Comparative Example 1.
[0040] Figure 12 The electrical performance of the patterned two-dimensional WSe2 devices for Example 1 and Comparative Example 1. Detailed implementation
[0041] Now, various exemplary embodiments of the present invention will be described in detail. This detailed description should not be considered as a limitation of the present invention, but rather as a more detailed description of certain aspects, characteristics, and implementation schemes of the present invention.
[0042] It should be understood that the terms described in the present invention are only for describing specific embodiments and are not used to limit the present invention.
[0043] Unless otherwise specified, all technical and scientific terms used herein have the same meaning as commonly understood by those of ordinary skill in the art to which the present invention pertains. Although the present invention only describes preferred methods and materials, any methods and materials similar or equivalent to those described herein can also be used in the implementation or testing of the present invention. All documents mentioned in this specification are incorporated by reference to disclose and describe the methods and / or materials related to the documents. In case of conflict with any incorporated document, the content of this specification shall prevail.
[0044] Without departing from the scope or spirit of the present invention, various improvements and changes can be made to the specific embodiments of the specification of the present invention, which will be obvious to those skilled in the art. Other embodiments obtained from the specification of the present invention will be obvious to those skilled in the art. The specification and examples of the present invention are merely exemplary.
[0045] As Figure 1 shown, an embodiment of the present invention discloses a method for preparing a non-destructive patterned two-dimensional material, including the following steps:
[0046] S101: Prepare a two-dimensional material on a sacrificial substrate;
[0047] S102: Pattern the two-dimensional material by using photolithography and etching technology;
[0048] S103: Prepare a support layer on the sacrificial substrate;
[0049] S104: Transfer the two-dimensional material on the sacrificial substrate to the support layer;
[0050] S105: Transfer the patterned two-dimensional material on the support layer to the target substrate;
[0051] S106: Immerse the target substrate material in an acetone solution, then take it out and heat it to remove the support layer, and obtain the patterned two-dimensional material.
[0052] As a typical but non-limiting example, the sacrificial substrate is selected from a substrate with silicon oxide, a hafnium oxide substrate, or a sapphire substrate.
[0053] As a typical but non-limiting example, the two-dimensional material is selected from graphene, molybdenum disulfide, molybdenum diselenide, tungsten disulfide, tungsten diselenide, or molybdenum ditelluride, and the interlayer binding force of the two-dimensional material is van der Waals force.
[0054] In some embodiments of the present invention, the method for preparing the two-dimensional material is selected from micro-mechanical exfoliation method, CVD growth method, and PVD growth method.
[0055] As an example, the method for preparing tungsten diselenide nanosheets by the micro-mechanical exfoliation method includes the following steps: First, cut out a strip of blue tape, take a piece of bulk tungsten diselenide and place it on the blue tape. After folding it once, remove it. At this time, the material remaining on the blue tape is relatively thick. Then, fold the blue tape repeatedly, paying attention to folding in one direction to avoid more residual glue later, until the reflection of the tungsten diselenide fragments on the blue tape is not obvious. Note that during the folding process, the number of folds should not be too many to avoid obtaining smaller-sized exfoliated materials. Slowly attach the blue tape to the sacrificial substrate, trying to make each tungsten diselenide fragment contact the substrate, and press with an appropriate force to make the material tightly adhere to the substrate. Separate the blue tape from the sacrificial substrate. At this time, few-layer or single-layer tungsten diselenide has been adsorbed on the sacrificial substrate. Finally, find the required few-layer tungsten diselenide under the optical microscope and take a photo for later transfer operations.
[0056] As a typical but non-limiting example, the method for preparing two-dimensional materials on a sacrificial substrate is the dry transfer method. The specific operation is as follows: Turn on the precise transfer platform and the optical microscope, place the pre-prepared sacrificial substrate on the platform, turn on the mechanical pump to make it adsorbed, and find the transfer position under the microscope. Place the sacrificial substrate of the two-dimensional material at the clamping position. At this time, note that the sample is placed downward and the substrate is placed upward. Using the precise transfer platform, under naked-eye observation, lower the sacrificial substrate support plate until it contacts the sacrificial substrate. Turn on the heating module and heat it to 50 °C, then keep it warm for 3 minutes, and lift the sacrificial substrate support plate. At this time, the target sample has been transferred to the sacrificial substrate.
[0057] As a typical but non-limiting example, the two-dimensional material patterning method is selected from: mask techniques such as photolithography and electron beam lithography.
[0058] Preferably, the two-dimensional material etching method is selected from: plasma etching, reactive ion etching. Among them, the parameters of plasma etching can be selected from: the oxygen flow rate is 5 sccm - 20 sccm, such as 5 sccm, 15 sccm, 20 sccm and any combination within this range.
[0059] Or, the argon flow rate is 5 sccm - 20 sccm, such as 5 sccm, 15 sccm, 20 sccm and any combination within this range.
[0060] Or, the SF6 oxygen flow rate is 5 sccm - 10 sccm, such as 10 sccm, 15 sccm, 20 sccm and any combination within this range.
[0061] The power of plasma etching is 3 - 20 W, such as 5 W, 10 W, 15 W and any combination within this range.
[0062] The time range of plasma etching is 5 - 10 s, such as 5 s, 8 s, 10 s and any combination within this range.
[0063] In one embodiment, the patterning etching method of tungsten diselenide is as follows: on a sacrificial substrate with tungsten diselenide, spin-coat the organic support layer at 3000 revolutions per minute for 1 minute, and then dry it on a hot plate at 120 °C for 1 minute. Perform patterning exposure using an electron beam exposure system and develop for 30 s. In the subsequent patterning etching process, use a plasma etching machine to bombard in an atmosphere of SF6 and O2. Treat for 5 s at 15 sccm of SF6, 5 sccm of O2, and a power of 5 W.
[0064] As a typical but non-limiting example, the support layer is selected from: PMMA, PPC, PVA.
[0065] As a typical but non-limiting example, the spin-coating parameters of the support layer are selected from:
[0066] Rotation speed: 1000 - 3000 revolutions per minute, such as 1000 revolutions per minute, 1500 revolutions per minute, 3000 revolutions per minute and any combination within this range; spin-coating time range: 30 - 60 s, such as 30 s, 45 s, 60 s and any combination within this range; baking temperature range: 60 - 120 °C, such as 60 °C, 95 °C, 120 °C and any combination within this range; baking time range: 10 - 60 s, such as 10 s, 30 s, 60 s and any combination within this range.
[0067] As a typical but non-limiting example, the transfer method of the two-dimensional material is selected from: PDMS-assisted transfer, gold-assisted transfer, water-assisted transfer, and wet etching transfer.
[0068] As a typical but non-limiting example, the method for removing the support layer: acetone heating temperature 95 °C - 120 °C, heating time 15 min - 20 min.
[0069] Example 1
[0070] A preparation method of patterned tungsten diselenide, comprising the following steps:
[0071] (1) Preparation of few-layer tungsten diselenide nanosheets by mechanical exfoliation method: First, cut out strip-shaped blue tape, take a piece of bulk tungsten diselenide and place it on the blue tape. After folding it once, remove it. At this time, the material remaining on the blue tape is relatively thick. Then fold the blue tape repeatedly, paying attention to folding in one direction to avoid more residual glue later, until the reflection of the tungsten diselenide fragments on the blue tape is not obvious. Note that during the folding process, the number of folds should not be too many to avoid obtaining smaller-sized exfoliated materials. Slowly attach the blue tape to the PDMS (polydimethylsiloxane) substrate, try to make each tungsten diselenide fragment contact the substrate, and press with appropriate force to make the material tightly combined with the substrate. Separate the blue tape from the PDMS. At this time, few-layer or single-layer tungsten diselenide has been adsorbed on the PDMS. Finally, find the required few-layer tungsten diselenide under the optical microscope and take a photo for later transfer operation.
[0072] (2) Dry transfer of tungsten diselenide: Turn on the precise transfer platform and the optical microscope, place the pre-prepared sacrificial substrate (such as Figure 2 ) on the platform, turn on the mechanical pump to make it adsorbed, and find the transfer position under the microscope. Place the PDMS with tungsten diselenide obtained in the previous step at the clamping position. At this time, note that the sample is placed downward and the substrate is placed upward. Using the precise transfer platform, under visual observation, lower the PDMS support plate until it contacts the sacrificial substrate. Turn on the heating module and heat it to 50 °C, keep it warm for 3 min, and then lift the PDMS support plate. At this time, the target sample has been transferred to the sacrificial substrate, as shown in Figure 3 .
[0073] (3) Patterned etching of tungsten diselenide: As shown in Figure 4 , after spin-coating PMMA (polymethyl methacrylate) on the sacrificial substrate with tungsten diselenide at 3000 revolutions per minute for 1 min, dry it on a hot plate at 120 °C for 1 min. Perform patterned exposure using an electron beam exposure system and develop for 30 s. In the subsequent patterned etching process, use a plasma etching machine to bombard in an atmosphere of SF6 and O2. Treat it at 15 sccm of SF6, 5 sccm of O2, and a power of 5 W for 5 s.
[0074] (4) Preparation of the support layer: Weigh 1 g of precise PPC (poly(ethylene carbonate)) particles and dissolve them in 10 mL of anisole. Under heating conditions of 85 °C, stir with a magnetic stirrer at 500 rpm for 10 h to obtain a PPC solution. Use a spin coater to spin-coat the PPC solution on the sacrificial substrate with patterned tungsten diselenide under the parameters of a rotation speed of 1500 rpm and a spin-coating time of 30 s. After spin-coating, place it on a hot plate at 100 °C for 15 s and then remove it. Spin-coat 3 layers continuously.
[0075] (5)Precise exfoliation of patterned tungsten diselenide: Place the sacrificial substrate on the tabletop and gently scrape the edges with a knife to prevent the edges of the sacrificial substrate from sticking and tearing the organic support layer during subsequent operations. Immerse the sacrificial substrate with patterned tungsten diselenide in deionized water. Since the sacrificial substrate is hydrophilic, water will quickly wet the surface of the sacrificial substrate. However, the organic support layer is hydrophobic and will repel water. Water will insert between the hydrophilic substrate and the hydrophobic organic support layer and separate the organic support layer from the sacrificial substrate. At the same time, the hydrophobic tungsten diselenide also falls off the substrate together with the organic support layer, as Figure 5 shown.
[0076] (6)Transfer of patterned tungsten diselenide to the target substrate: Reverse-paste the organic support layer with tungsten diselenide onto the PDMS support plate (as Figure 6 shown). Bake on a hot plate at 110 °C for 5 min to reduce film wrinkles. Using a precise transfer platform, slowly approach the organic support layer to the target substrate until the sample contacts the target substrate. Turn on the heating module. When the temperature rises to 120 °C, lift the PDMS support plate. At this time, the sample with the organic support layer has been transferred to the target substrate, as Figure 7 shown. Remove the target substrate and then bake on a hot plate at 90 °C for 20 min to reduce bubbles.
[0077] (7)Removal of the support layer: Place the target substrate with the organic support layer in an acetone solution and bake on a hot plate at 85 °C for 20 min to remove residual glue. Then soak and wash in an isopropyl alcohol solution to remove the residual acetone. Quickly take out and dry with nitrogen to obtain patterned tungsten diselenide.
[0078] The patterned transferred tungsten diselenide prepared in Example 1 is shown in Figure 7 . To ensure that the electrical test results are closer to the intrinsic properties of the material, when fabricating a two-dimensional WSe2 transistor device ( Figure 8 ), the electrode material was selected as gold (Au) with a relatively high conductivity.
[0079] Electrical performance test method for the two-dimensional WSe2 transistor device in Example 1:
[0080] Use a B1500A semiconductor device parameter analyzer and a Lakeshore probe station to study and analyze the electrical properties of the material. At the same time, a relatively high vacuum (5×10 -5 mbar) environment was maintained during the test to avoid the material being affected by external environmental oxidation, doping, etc. during the test.
[0081] The electrical performance test results of two-dimensional WSe2 are shown in Figure 9 . It can be turned on under both negative and positive gate voltages. The on-state current of n-type electron transport reaches 10 -6 A, and the on-off ratio is ~105 ; while the current of p-type hole transport is 10 -7 A, and the on / off ratio is ~10 4 , that is, two-dimensional WSe2 has two carrier transport forms of electron conduction and hole conduction, and the gate leakage current is lower than 10 -12 A, indicating that the dielectric layer of the two-dimensional WSe2 device is not damaged and the performance of the electronic device is excellent.
[0082] Example 2
[0083] A method for preparing patterned tungsten diselenide, comprising the following steps:
[0084] Same as Example 1, the difference is only that in step (6), the target substrate is a BN (boron nitride) substrate, and finally a WSe2 / BN heterojunction is constructed.
[0085] The patterned tungsten diselenide prepared in Example 2 is shown in Figure 10 , from Figure 10 it can be seen that the WSe2 heterojunction has uniform rotation angle and clean surface, and the patterning of two-dimensional materials without damage is successfully realized.
[0086] Comparative Example 1
[0087] Based on the current advanced patterning technology system, the combination of electron beam lithography technology and plasma etching technology is used to directly prepare a patterned two-dimensional WSe2 material on the target substrate, specifically as follows:
[0088] 1. Material transfer: Transfer the two-dimensional WSe2 material precisely onto the prepared target substrate, and the transfer process is as in Example 1.
[0089] 2. Electron beam lithography resist spin coating: As in Example 1, on the target substrate with tungsten diselenide, spin coat PMMA (polymethyl methacrylate) at 3000 revolutions per minute for 1 minute, and then dry it on a hot plate at 120 °C for 1 minute.
[0090] 3. Patterned exposure and etching: As in Example 1, use an electron beam lithography system for patterned exposure and develop for 30 s. In the subsequent patterned etching process, use a plasma etching machine to bombard in an atmosphere of SF6 and O2. Treat for 5 s at 15 sccm of SF6, 5 sccm of O2, and a power of 5 W.
[0091] 4. Removal of the PMMA film layer: Place the target substrate with PMMA in an acetone solution, bake it on a hot plate at 95 °C for 15 minutes to remove the residual glue, then soak and wash it in an isopropyl alcohol solution to remove the residual acetone, quickly take it out and dry it with nitrogen to obtain patterned tungsten diselenide.
[0092] The patterned two-dimensional WSe2 material prepared in Comparative Example 1 is shown inFigure 11 As shown, through careful observation and analysis, significant etching effect traces can be clearly identified on the target substrate. These etching traces have a direct impact on the thickness distribution of the substrate, resulting in non-uniformity of the substrate at the microscale and causing micro-roughness on the surface. The gate leakage current test method for the patterned two-dimensional WSe2 devices in Example 1 and Comparative Example 1 uses a B1500A semiconductor device parameter analyzer and a Lakeshore probe station to study and analyze the electrical properties of the materials. The results are as Figure 12 shown. Compared with Example 1, the dielectric performance of Comparative Example 1 decreases and the gate leakage current is significantly higher, seriously affecting the subsequent device operation.
[0093] The above-described embodiments are only descriptions of the preferred modes of the present invention and do not limit the scope of the present invention. Without departing from the design spirit of the present invention, various deformations and improvements made by those of ordinary skill in the art to the technical solutions of the present invention shall fall within the protection scope determined by the claims of the present invention.
Claims
1. A non-destructive method for preparing a patterned two-dimensional material, characterized in that: The following steps are involved: (1) preparing a two-dimensional material on a sacrificial substrate; (2) patterning the two-dimensional material; (3) preparing a support layer on a sacrificial substrate; (4) Transferring the two-dimensional material on the sacrificial substrate to the supporting layer; (5) Transferring the two-dimensional material on the supporting layer to the target substrate; (6) Removing the supporting layer to obtain a patterned two-dimensional material.
2. The method for preparing a non-destructive patterned two-dimensional material according to claim 1, characterized in that: The method for preparing the two-dimensional material on the sacrificial substrate in step (1) includes a micromechanical peeling method, a CVD growth method, and a PVD growth method.
3. The method for preparing a non-destructive patterned two-dimensional material according to claim 1, characterized in that: The patterning process of the two-dimensional material in step (2) is divided into two steps: exposure and etching. The exposure includes electron beam exposure or ultraviolet exposure; the etching includes plasma etching or wet etching using a chemical solution.
4. The method for preparing a non-destructive patterned two-dimensional material according to claim 1, characterized in that: The preparation method of the support layer in step (3) is: using a coating machine to spin-coat the support layer material solution on the sacrificial substrate with the patterned two-dimensional material, drying after the spin coating is completed, and continuously spin coating 3-4 layers.
5. The method for preparing a non-destructive patterned two-dimensional material according to claim 4, characterized in that: The rotation speed of the spin coating is 1000-3000 rpm, the spin coating time of each layer is 30-60s, the drying temperature is 60-120°C, and the drying time is 10-60s.
6. The method for preparing a non-destructive patterned two-dimensional material according to claim 1, characterized in that: The two-dimensional material transfer method in steps (4) and (5) includes a PDMS-assisted transfer method, a gold-assisted transfer method, a water-assisted transfer method or a wet etching transfer method.
7. The method for preparing a non-destructive patterned two-dimensional material according to claim 1, characterized in that: The method for removing the support layer in step (6) is to immerse the target substrate after the two-dimensional material is transferred in step (5) in an acetone solution, then take it out and heat it to remove the support layer.
8. The method for preparing a non-destructive patterned two-dimensional material according to claim 1, characterized in that: The sacrificial substrate is selected from a silicon oxide substrate, a hafnium oxide substrate or a sapphire substrate; and / or The two-dimensional material is selected from one of graphene, molybdenum disulfide, molybdenum diselenide, tungsten disulfide, tungsten diselenide or molybdenum ditelluride; and / or The support layer is selected from one of PMMA, PPC and PVA.
9. A patterned two-dimensional material prepared by the non-destructive patterned two-dimensional material preparation method described in any one of claims 1-8.
10. An application of the patterned two-dimensional material according to claim 9 in the field of processing technology of two-dimensional devices.