Light-emitting element structure and display device

Abstract

The invention provides a light-emitting element structure and a display device. The light-emitting element structure includes at least one light-emitting element and a reflective retaining wall. Each light-emitting element comprises a first type semiconductor layer, a light-emitting layer and a second type semiconductor layer. The light-emitting layer is located between the first-type semiconductor layer and the second-type semiconductor layer, and the second-type semiconductor layer has a light-emitting surface. The reflection retaining wall comprises a first part and a second part. The first part surrounds the side wall of the second type semiconductor layer of each light-emitting element and exposes the light-emitting surface of each light-emitting element. The second part is arranged on the surface of the first part, and the connecting position of the second part and the first part is separated from the light emitting surface by a distance. According to the light-emitting element structure, the problem of shading of the metal groove in the prior art can be solved, and the optical property can be improved.

Description

Technical Field

[0001] The present invention relates to a light-emitting display technology, and more particularly to a light-emitting element structure and a display device. Background Art

[0002] During the manufacturing process of micro light-emitting diodes, metal grooves with high reflectivity are required to increase the light extraction efficiency. However, due to the high-precision requirements and the limitations of the coating technology, problems such as structural deviation and excessive width at the bottom of the metal grooves are likely to cause the metal grooves to cover the light-emitting surface of the micro light-emitting diodes, resulting in a light-shielding problem, which instead reduces the light extraction efficiency of the micro light-emitting diodes. Summary of the Invention

[0003] The present invention aims at a light-emitting element structure, which can solve the problem of light shielding by metal grooves in the prior art and improve the optical characteristics.

[0004] The present invention also aims at a display device, which includes the above-mentioned light-emitting element structure and has better display quality.

[0005] According to an embodiment of the present invention, the light-emitting element structure includes at least one light-emitting element and a reflective barrier. Each light-emitting element includes a first-type semiconductor layer, a light-emitting layer, and a second-type semiconductor layer. The light-emitting layer is located between the first-type semiconductor layer and the second-type semiconductor layer, and the second-type semiconductor layer has a light-emitting surface. The reflective barrier includes a first part and a second part. The first part surrounds the sidewall of the second-type semiconductor layer of each light-emitting element and exposes the light-emitting surface of each light-emitting element. The second part is disposed on the surface of the first part, and the connection between the second part and the first part is spaced apart from the light-emitting surface by a distance.

[0006] According to an embodiment of the present invention, the display device includes a substrate and a plurality of light-emitting element structures. The light-emitting element structures are disposed on the substrate, and each light-emitting element structure includes at least one light-emitting element and a reflective barrier. Each light-emitting element includes a first-type semiconductor layer, a light-emitting layer, and a second-type semiconductor layer. The light-emitting layer is located between the first-type semiconductor layer and the second-type semiconductor layer, and the second-type semiconductor layer has a light-emitting surface. The reflective barrier includes a first part and a second part. The first part surrounds the sidewall of the second-type semiconductor layer of each light-emitting element and exposes the light-emitting surface of each light-emitting element. The second part is disposed on the surface of the first part, and the connection between the second part and the first part is spaced apart from the light-emitting surface by a distance.

[0007] Based on the above, in the design of the light-emitting element structure of the present invention, the first part of the reflective barrier surrounds the sidewall of the second-type semiconductor layer of each light-emitting element and exposes the light-emitting surface of each light-emitting element, while the second part of the reflective barrier is disposed on the surface of the first part, and the connection between the second part and the first part is spaced from the light-emitting surface. In this way, the setting of the reflective barrier does not block the light-emitting surface of the light-emitting element, can improve the problem of light shielding by the metal groove in the prior art, and can effectively improve the light extraction efficiency of the light-emitting element structure of the present invention. In addition, a display device using the light-emitting element structure of the present invention can have better display quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Figure 1 FIG. is a schematic cross-sectional view of a light-emitting element structure according to an embodiment of the present invention;

[0009] Figure 2 FIG. is a schematic cross-sectional view of a light-emitting element structure according to another embodiment of the present invention;

[0010] Figure 3 FIG. is a schematic cross-sectional view of a light-emitting element structure according to another embodiment of the present invention;

[0011] Figure 4 FIG. is a schematic cross-sectional view of a light-emitting element structure according to another embodiment of the present invention;

[0012] Figure 5 FIG. is a schematic cross-sectional view of a light-emitting element structure according to another embodiment of the present invention;

[0013] Figure 6 FIG. is a schematic cross-sectional view of a light-emitting element structure according to another embodiment of the present invention;

[0014] Figure 7A FIG. is a schematic cross-sectional view of a display device according to an embodiment of the present invention;

[0015] Figure 7B is Figure 7A a top view schematic diagram of the display device;

[0016] Figure 8 FIG. is a schematic cross-sectional view of a display device according to another embodiment of the present invention.

[0017] DESCRIPTION OF REFERENCE NUMERALS

[0018] 10a, 10b: display device;

[0019] 100, 100a, 100b, 100c, 100d, 100e, 100f: light-emitting element structure;

[0020] 110: light-emitting element

[0021] 112: First-type semiconductor layer;

[0022] 114: Light-emitting layer;

[0023] 116: Second-type semiconductor layer;

[0024] 117: Side wall;

[0025] 120, 120a, 120c: Reflective barrier;

[0026] 122, 122a, 122c: First part;

[0027] 123a: Surface;

[0028] 124, 124a, 124c: Second part;

[0029] 125a: Peripheral surface;

[0030] 130: Electrode;

[0031] 140: Color conversion material;

[0032] 150: Reflective layer;

[0033] 160: Ohmic contact layer;

[0034] 200: Substrate;

[0035] 210, 210’: Insulating layer;

[0036] 220: Metal trace;

[0037] C: Accommodating space;

[0038] D: Distance;

[0039] E: Light-emitting surface;

[0040] H: Height;

[0041] L1, L1’: First maximum width;

[0042] L2, L2’: Second maximum width;

[0043] P: Horizontal plane;

[0044] S1: First outer surface;

[0045] S2: Second outer surface. Detailed implementation manners

[0046] Reference will now be made in detail to exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numerals are used in the drawings and the description to refer to the same or like parts.

[0047] Embodiments of the present invention may be combined with the attached Figure 1 It is understood that the drawings of the present invention are also regarded as part of the disclosure. It should be understood that the drawings of the present invention are not drawn to scale. In fact, the dimensions of the elements may be arbitrarily enlarged or reduced to clearly show the features of the present invention.

[0048] Figure 1 is a cross-sectional schematic view of a light-emitting element structure according to an embodiment of the present invention. Please refer to Figure 1 In this embodiment, the light-emitting element structure 100a includes at least one light-emitting element (a light-emitting element 110 is schematically shown) and a reflective barrier 120a. The light-emitting element 110 includes a first-type semiconductor layer 112, a light-emitting layer 114, and a second-type semiconductor layer 116. The light-emitting layer 114 is located between the first-type semiconductor layer 112 and the second-type semiconductor layer 116, and the second-type semiconductor layer 116 has an out-coupling surface E. The reflective barrier 120a includes a first portion 122a and a second portion 124a. The first portion 122a surrounds the sidewall 117 of the second-type semiconductor layer 116 of each light-emitting element 110 and exposes the out-coupling surface E of each light-emitting element 110. The second portion 124a is disposed on the surface 123a of the first portion 122a, and the connection between the second portion 124a and the first portion 122a is spaced from the out-coupling surface E by a distance D.

[0049] Specifically, in this embodiment, the light-emitting element structure 100a is disposed on a substrate 200, and an insulating layer 210 is disposed between the light-emitting element structure 100a and the substrate 200, where the substrate 200 is, for example, a transparent rigid substrate such as a glass substrate or a sapphire substrate, but is not limited thereto. In one embodiment, the light-emitting element structure 100a may be, for example, a micro light-emitting diode (Micro LED) or a microchip. As used herein, a "micro" element means that it may have a size of 1 micron to 100 microns. In some embodiments, the light-emitting element structure may have a maximum width of 20 microns, 10 microns, or 5 microns. In some embodiments, the light-emitting element structure may have a maximum height less than 20 microns, 10 microns, or 5 microns. However, it should be understood that this embodiment is not necessarily limited thereto, and aspects of certain embodiments may be applied to larger and perhaps smaller scales.

[0050] One of the first-type semiconductor layer 112 and the second-type semiconductor layer 116 of the light-emitting element 110 in this embodiment is a P-type semiconductor layer, and the other of the first-type semiconductor layer 112 and the second-type semiconductor layer 116 is an N-type semiconductor layer. That is to say, in one embodiment, the first-type semiconductor layer 112 can be a P-type semiconductor layer, and the second-type semiconductor layer 116 can be an N-type semiconductor layer. In another embodiment, the first-type semiconductor layer 112 can be an N-type semiconductor layer, and the second-type semiconductor layer 116 can be a P-type semiconductor layer. The light-emitting layer 114 is, for example, a multiple quantum well (MQW) structure layer, but is not limited thereto.

[0051] Furthermore, the first portion 122a of the reflective barrier 120a in this embodiment directly contacts and covers a partial sidewall 117 of the second-type semiconductor layer 116, and completely exposes the light-emitting surface E of the light-emitting element 110. Herein, the surface 123a of the first portion 122a of the reflective barrier 120a can be flush with the light-emitting surface E of the light-emitting element 110. In one embodiment, the cross-sectional shape of the first portion 122a of the reflective barrier 120a can be, for example, an inverted trapezoid that is wider at the top and narrower at the bottom, but is not limited thereto. The second portion 124a is directly disposed on the surface 123a of the first portion 122a, wherein the second portion 124a directly contacts the surface 123a of the first portion 122a. In one embodiment, the extending direction of the second portion 124a (for example, the Y-axis direction) can be perpendicular to the extending direction of the first portion 122a (for example, the X-axis direction), but is not limited thereto. In one embodiment, the second portion 124a can be a continuous annular structure, that is, it has front, rear, left, and right sidewalls. In one embodiment, the second portion 124a can be a non-continuous sidewall structure on the left and right sides.

[0052] In particular, the connection between the second portion 124a and the first portion 122a is separated from the light-emitting surface E by a distance D, which means that the setting of the second portion 124a will not block the light-emitting surface E of the light-emitting element 110 either. In one embodiment, the distance D is, for example, 0.01 micrometer to 1 micrometer. As Figure 1 shown, the second portion 124a of the reflective barrier 120a, the surface 123a of the first portion 122a, and the light-emitting surface E can define a receiving space C, wherein the first orthographic projection area of the receiving space C on the horizontal plane P is larger than the second orthographic projection area of the light-emitting surface E on the horizontal plane P. That is to say, the surface 123a of the first portion 122a and the light-emitting surface E can be regarded as the bottom surface of the receiving space C, and the second portion 124a can be regarded as the sidewall of the receiving space C, and the area of the receiving space C is larger than the area of the light-emitting surface E. In this way, the setting of the reflective barrier 120a will not block the light-emitting surface E of the light-emitting element 110 at all, so that the light-emitting element structure 100a has a 100% light-emitting aperture ratio.

[0053] Furthermore, the material of the reflective barrier 120a in this embodiment can be, for example, a metallic material such as copper, aluminum, or other suitable metallic materials, or a non-metallic material. In one embodiment, the first part 122a and the second part 124a of the reflective barrier 120a can be an integrally formed structure, meaning that the first part 122a and the second part 124a are of the same material. In one embodiment, the first part 122a and the second part 124a of the reflective barrier 120a can also be of different materials. When the material of the reflective barrier 120a is a metallic material, the first part 122a of the reflective barrier 120a can be electrically connected to the second-type semiconductor layer 116. If the second-type semiconductor layer 116 is an N-type semiconductor layer, the electrical connection between the first part 122a and the second-type semiconductor layer 116 can form an ohmic contact to conduct current. On the other hand, the first part 122a of the reflective barrier 120a is electrically isolated from the light-emitting layer 114 and the first-type semiconductor layer 112. That is to say, the first part 122a does not contact and is electrically insulated from the light-emitting layer 114 and the first-type semiconductor layer 112.

[0054] Please refer again to Figure 1 , in this embodiment, the first part 122a of the reflective barrier 120a has a first maximum width L1, and the second part 124a has a second maximum width L2, and the second maximum width L2 is less than the first maximum width L1. In one embodiment, the first maximum width L1 is, for example, between 1.2 micrometers and 1.7 micrometers, that is, 1.2 micrometers < L1 < 1.7 micrometers. In one embodiment, the second maximum width L2 is, for example, between 0.7 micrometers and 1.2 micrometers, that is, 0.7 micrometers < L2 < 1.2 micrometers. Furthermore, the second part 124a has a height H, where the ratio of the height H to the first maximum width L1 is, for example, between 1 and 4, that is, 1 < H / L1 < 4. That is to say, the second part 124a on the light-emitting surface E can be in an elongated shape, which is smaller and thinner in width compared to the first part 122a, and can increase the volume of the accommodation space C. In one embodiment, the height (or thickness) of the first part 122a can be less than the height H of the second part 124a.

[0055] In addition, the light-emitting element structure 100a of this embodiment further includes an electrode 130 disposed on the first-type semiconductor layer 112 of the light-emitting element 110, where the electrode 130 is electrically connected to the first-type semiconductor layer 112. When the reflective barrier 120a is a metallic material, the light-emitting element structure 100a of this embodiment can be regarded as a vertical light-emitting element structure, such as a vertical micro light-emitting diode.

[0056] Since the first part 122a of the reflective retaining wall 120a of this embodiment surrounds the sidewall 117 of the second-type semiconductor layer 116 and exposes the light-emitting surface E of the light-emitting element 110, and the second part 124a of the reflective retaining wall 120a is disposed on the surface 123a of the first part 122a, and the connection between the second part 124a and the first part 122a is spaced from the light-emitting surface E by a distance D. In this way, the setting of the reflective retaining wall 120a does not block the light-emitting surface E of the light-emitting element 110, which can improve the problem of light shielding by metal grooves in the prior art and effectively improve the light extraction efficiency of the light-emitting element structure 100a of this embodiment.

[0057] It must be noted here that the following embodiments follow the component numbers and some contents of the foregoing embodiments, where the same numbers are used to represent the same or similar components, and the description of the same technical content is omitted. For the description of the omitted parts, reference can be made to the foregoing embodiments, and the following embodiments will not be repeated.

[0058] Figure 2 is a cross-sectional schematic diagram of a light-emitting element structure according to another embodiment of the present invention. Please refer to Figure 1 and Figure 2 The light-emitting element structure 100b of this embodiment is similar to the above-mentioned light-emitting element structure 100a. The difference between the two is that in this embodiment, the light-emitting element structure 100b further includes a color conversion material 140 disposed in the accommodation space C to provide color conversion for the light emitted by the light-emitting element structure 100b. In one embodiment, the color conversion material 140 is, for example, a fluorescent material, a quantum dot (QD), or a wavelength conversion material with similar properties. Since the setting of the reflective retaining wall 120a does not block the light-emitting surface E of the light-emitting element 110, it means that a larger accommodation space C can be provided compared with the prior art. Therefore, the filling amount of the color conversion material 140 is increased, and the color conversion efficiency of the light-emitting element structure 100b can be improved. Moreover, the light emitted from the light-emitting surface E can directly enter the color conversion material 140 without being blocked by the reflective retaining wall 120a, so that the overall light output efficiency of the light-emitting element structure 100b is improved. In some embodiments, the first orthographic projection area is, for example, less than 1.6 times the second orthographic projection area. For an overly large accommodation space C, the color conversion material 140 in the outer region near the bottom thereof cannot be irradiated by the light emitted from the light-emitting surface E, resulting in a poor color conversion effect.

[0059] Figure 3 is a cross-sectional schematic diagram of a light-emitting element structure according to another embodiment of the present invention. Please refer to Figure 1 and Figure 3, the light-emitting element structure 100c of this embodiment is similar to the above-mentioned light-emitting element structure 100a. The difference between the two is that in this embodiment, the materials of the first part 122c and the second part 124c of the reflective barrier 120c are different metal materials. In one embodiment, for the purpose of conductivity and reducing the impedance of the conductive line, the conductivity of the first part 122c can be greater than that of the second part 124c. In one embodiment, for the purpose of reflection and increasing the ratio of the light interacting back and forth with the color conversion material 140 in the accommodation space C, the reflectivity of the second part 124c is greater than that of the first part 122c. In one embodiment, the material of the first part 122c of the reflective barrier 120c can be, for example, copper, and the material of the second part 124c of the reflective barrier 120c can be, for example, aluminum.

[0060] Figure 4 is a cross-sectional schematic view of a light-emitting element structure according to another embodiment of the present invention. Please also refer to Figure 1 and Figure 4 , the light-emitting element structure 100d of this embodiment is similar to the above-mentioned light-emitting element structure 100a. The difference between the two is that in this embodiment, the material of the reflective barrier 120a is a metal material, and the light-emitting element structure 100d further includes a reflective layer 150 covering the peripheral surface 125a of the second part 124a, wherein the reflectivity of the reflective layer 150 is greater than that of the reflective barrier 120a, which means that the material of the reflective layer 150 is different from that of the reflective barrier 120a. Specifically, the first part 122a and the second part 124a of the reflective barrier 120a in this embodiment are embodied as an integrally formed structure, that is, the first part 122a and the second part 124a are made of the same metal material, which can increase the material volume of the conductive part and improve the overall conductivity. The reflective layer 150 directly covers the peripheral surface 125a of the second part 124a and is conformally arranged. In one embodiment, the material of the reflective barrier 120a is, for example, copper, and the material of the reflective layer 150 is, for example, silver, but not limited thereto.

[0061] Figure 5 is a cross-sectional schematic view of a light-emitting element structure according to another embodiment of the present invention. Please also refer to Figure 1 and Figure 5, the light-emitting element structure 100e of this embodiment is similar to the above-mentioned light-emitting element structure 100a. The difference between the two is that in this embodiment, the light-emitting element structure 100e further includes an ohmic contact layer 160 disposed between the first portion 122a of the reflective barrier 120a and the second-type semiconductor layer 116. In one embodiment, the material of the ohmic contact layer 160 can be, for example, molybdenum silicide (MoSi2), platinum silicide (PtSi), cobalt silicide (CoSi2), tungsten silicide (WSi2), gold-antimony alloy (AuSb), indium (In), molybdenum (Mo), indium tin oxide (ITO), or titanium / platinum / gold, which can effectively reduce the impedance.

[0062] Figure 6 is a cross-sectional schematic view of a light-emitting element structure according to another embodiment of the present invention. Please refer to Figure 1 and Figure 6 , the light-emitting element structure 100f of this embodiment is similar to the above-mentioned light-emitting element structure 100a. The difference between the two is that in this embodiment, the material of the reflective barrier 120a is a metallic material, and the light-emitting element structure 100f further includes a reflective layer 150 and an ohmic contact layer 160. The reflective layer 150 covers the peripheral surface 125a of the second portion 124a, wherein the reflectivity of the reflective layer 150 is greater than that of the reflective barrier 120a, which means that the material of the reflective layer 150 is different from that of the reflective barrier 120a. Specifically, the first portion 122a and the second portion 124a of the reflective barrier 120a in this embodiment are embodied as an integrally formed structure, that is, the first portion 122a and the second portion 124a are made of the same metallic material, which can increase the material volume of the conductive part and improve the overall conductivity. The reflective layer 150 directly covers the peripheral surface 125a of the second portion 124a and is conformally disposed. In one embodiment, the material of the reflective barrier 120a is, for example, copper, and the material of the reflective layer 150 is, for example, silver, but not limited thereto.

[0063] In addition, the ohmic contact layer 160 is disposed between the first portion 122a of the reflective barrier 120a and the second-type semiconductor layer 116. In one embodiment, the material of the ohmic contact layer 160 can be, for example, molybdenum silicide (MoSi2), platinum silicide (PtSi), cobalt silicide (CoSi2), tungsten silicide (WSi2), gold-antimony alloy (AuSb), indium (In), molybdenum (Mo), indium tin oxide (ITO), or titanium / platinum / gold, which can effectively reduce the impedance.

[0064] Figure 7A is a cross-sectional schematic view of a display device according to an embodiment of the present invention. Figure 7B is Figure 7A a top view schematic diagram of the display device. Please refer toFigure 7A and Figure 7B , in this embodiment, the display device 10a includes a substrate 200 and a plurality of light-emitting element structures 100, wherein the light-emitting element structures 100 are disposed on the substrate 200, and the electrodes 130 of the light-emitting element structures 100 are electrically connected to the substrate 200 through metal traces 220.

[0065] Specifically, the light-emitting element structure 100 of this example is similar to Figure 2 the light-emitting element structure 100b. The difference between the two is that: in this embodiment, the material of the reflective barrier 120 is metal, and two adjacent light-emitting element structures 100 share the same reflective barrier 120. That is to say, the first parts 122 of two adjacent reflective barriers 120 are connected together to form a continuous structure layer, and the second parts 124 of two adjacent reflective barriers 120 are connected together to form a continuous structure layer. Further, the first part 122 between two adjacent light-emitting elements 110 has a first maximum width L1', and the second part 124 has a second maximum width L2', and the second maximum width L2' is less than the first maximum width L1'. The connected reflective barriers 120 can form a common electrode on the side of the second semiconductor layer 116 of the light-emitting element 110, which can reduce the voltage drop reaction (IR-drop) of the display device 10 and improve the in-plane brightness uniformity of the display device 10a. The reflective barriers 120 serving as the common electrodes are connected to each other and can be controlled together, while the electrodes 130 of each light-emitting element structure 100 can be individually controlled. In some embodiments, the color conversion material 140 can convert red light, green light or blue light.

[0066] Figure 8 is a cross-sectional schematic view of a display device according to another embodiment of the present invention. Please also refer to Figure 7A and Figure 8 , the display device 10b of this embodiment is similar to the above-mentioned display device 10a. The difference between the two is that: in this embodiment, the insulating layer 210' disposed on the substrate 200 covers part of the light-emitting elements 110, is located between the first part 122a of the reflective barrier 120a and the substrate 200, and further extends between the reflective barriers 120a of two adjacent light-emitting element structures 100b, wherein the first outer surface S1 of the insulating layer 210' is flush with the second outer surface S2 of the second part 124a. That is to say, each light-emitting element structure 100b in the display device 10b of this embodiment can be individually controlled by an electrical signal through the electrode 130 and the reflective barrier 120a made of metal.

[0067] It is worth mentioning that the display devices 10a and 10b can select the above-mentioned appropriate light-emitting element structures 100, 100a, 100b, 100c, 100d, 100e, 100f according to the usage requirements, or can selectively add color conversion materials 140 into the accommodation space C in the light-emitting element structures 100b, 100c, 100d, 100e, 100f according to the usage requirements to provide the color conversion effect for the display devices 10a and 10b.

[0068] In summary, in the design of the light-emitting element structure of the present invention, the first part of the reflective barrier surrounds the side wall of the second-type semiconductor layer of each light-emitting element and exposes the light-emitting surface of each light-emitting element, and the second part of the reflective barrier is disposed on the surface of the first part, and the connection between the second part and the first part is spaced from the light-emitting surface. In this way, the setting of the reflective barrier will not cover the light-emitting surface of the light-emitting element, can improve the problem of light shielding by the metal groove in the prior art, and can effectively improve the light extraction efficiency of the light-emitting element structure of the present invention. In addition, the display device adopting the light-emitting element structure of the present invention can have better display quality.

[0069] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements on some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A light-emitting element structure, characterized in that, Comprising: At least one light-emitting element, each of the at least one light-emitting element including a first-type semiconductor layer, a light-emitting layer, and a second-type semiconductor layer, the light-emitting layer being located between the first-type semiconductor layer and the second-type semiconductor layer, and the second-type semiconductor layer having a light-emitting surface; And A reflective barrier wall, including a first part and a second part, the first part surrounding the sidewall of the second-type semiconductor layer of each of the at least one light-emitting element and exposing the light-emitting surface of each of the at least one light-emitting element, and the second part being disposed on the surface of the first part, and the connection between the second part and the first part being spaced apart from the light-emitting surface by a distance.

2. The light-emitting element structure according to claim 1, wherein, The first part of the reflective barrier wall is electrically connected to the second-type semiconductor layer.

3. The light-emitting element structure according to claim 1, wherein The second part of the reflective barrier wall, the surface of the first part, and the light-emitting surface of each of the at least one light-emitting element define an accommodation space, and the area of the first orthographic projection of the accommodation space on a horizontal plane is greater than the area of the second orthographic projection of the light-emitting surface on the horizontal plane.

4. The light-emitting element structure according to claim 3, wherein Further comprising: A color conversion material disposed within the accommodation space.

5. The light-emitting element structure according to claim 1, wherein The at least one light-emitting element is a plurality of light-emitting elements, and the first part between two adjacent ones of the plurality of light-emitting elements has a first maximum width, and the second part has a second maximum width, and the second maximum width is less than the first maximum width.

6. The light-emitting element structure according to claim 5, characterized in that, The second part has a height, and the ratio of the height to the first maximum width is between 1 and 4.

7. The light-emitting element structure according to claim 1, characterized in that, The material of the first part and the material of the second part are respectively different metal materials.

8. The light-emitting element structure according to claim 7, wherein The conductivity of the first part is greater than the conductivity of the second part.

9. The light-emitting element structure according to claim 7, characterized in that, The reflectivity of the second part is greater than the reflectivity of the first part.

10. The light-emitting element structure according to claim 1, characterized in that, Further comprising: A reflective layer covering the peripheral surface of the second part, wherein the reflectivity of the reflective layer is greater than the reflectivity of the reflective barrier wall.

11. The light-emitting element structure according to claim 1, characterized in that, Further comprising: An ohmic contact layer disposed between the first part and the second-type semiconductor layer.

12. The light-emitting element structure according to claim 1, wherein, The surface of the first part is flush with the light-emitting surface.

13. A display device, characterized in that, Comprising: A substrate; And A plurality of light-emitting element structures disposed on the substrate, each of the plurality of light-emitting element structures including: At least one light-emitting element, each of the at least one light-emitting element including a first-type semiconductor layer, a light-emitting layer, and a second-type semiconductor layer, the light-emitting layer being located between the first-type semiconductor layer and the second-type semiconductor layer, and the second-type semiconductor layer having a light-emitting surface; And A reflective barrier wall, including a first part and a second part, the first part surrounding the sidewall of the second-type semiconductor layer of each of the at least one light-emitting element and exposing the light-emitting surface of each of the at least one light-emitting element, and the second part being disposed on the surface of the first part, and the connection between the second part and the first part being spaced apart from the light-emitting surface by a distance.

14. The display device according to claim 13, wherein Further comprising: An insulating layer is disposed on the substrate, covering a part of the plurality of light-emitting element structures and located between the first part of the reflective barrier and the substrate, wherein the insulating layer further extends between the reflective barriers of two adjacent ones of the plurality of light-emitting element structures, and a first outer surface of the insulating layer is flush with a second outer surface of the second part.

15. The display device according to claim 13, characterized in that, The material of the reflective barrier is metal, and two adjacent ones of the plurality of light-emitting element structures share the same reflective barrier.

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