Inspection device, contact state determination device, and contact state determination method

Abstract

The purpose of the present invention is to reduce the manufacturing cost of a device and to reduce the size of the device. The present invention is provided with: a processing unit (6) for performing a determination process for determining whether or not the contact state of probes (P1, P2) in contact with a positive electrode terminal (Tp) and a metal layer (Lm) in a secondary battery (DUT) having a capacitance (Cd) between the positive electrode terminal (Tp) and the metal layer (Lm) is good; a storage unit (7) that stores a capacitance value of a capacitance (C3) between the probes (P1, P2) in a non-contact state with the positive electrode terminal (Tp) and the metal layer (Lm), and a threshold value that is defined to be a value equal to or less than a capacitance value of a capacitance (Cd) between the positive electrode terminal (Tp) and the metal layer (Lm); and a processing unit (6) that measures the capacitance value of the capacitance (capacitance obtained by adding the capacitance (C3) and the capacitance (Cd)) between the probes (P1, P2) in the contact state, and that determines whether or not the capacitance value obtained by subtracting the capacitance value of the capacitance (C3) from the measured capacitance value exceeds a threshold value. Whether the contact state between the probes (P1, P2) and the positive electrode terminal (Tp) and the metal layer (Lm) is good is determined.

Description

Technical Field

[0001] The present invention relates to a contact state determination device, an inspection device including the contact state determination device, and a contact state determination method. The contact state determination device determines the contact state between a pair of probes used in a measurement device or an inspection device for measuring a measured quantity such as voltage with respect to an inspection object and a pair of determination object parts in the inspection object. Background Art

[0002] As such a contact state determination device, the applicant has disclosed an insulation withstand voltage test device in Patent Document 1 below. The insulation withstand voltage test device includes a power supply unit (a power supply for withstand voltage test and a power supply for insulation resistance test) that applies a test voltage to a test object, and four probes, namely, voltage application probes P1 and P2 and disconnection detection probes P3 and P4, and is configured to perform a withstand voltage test and an insulation resistance test on the test object. In this case, in the insulation withstand voltage test device, the voltage application probe P1 is connected to the Hi-side power supply terminal of the power supply unit via a first wiring, the voltage application probe P2 is connected to the Lo-side power supply terminal of the power supply unit via a second wiring, the disconnection detection probe P3 is connected to the Lo-side power supply terminal of the power supply unit via a third wiring, and the disconnection detection probe P4 is connected to the second wiring L2 via a fourth wiring. Further, a Hi-side disconnection voltage detection unit 112 is provided in the third wiring, and a disconnection detection power supply and a Lo-side disconnection current detection unit are provided in the fourth wiring. Thus, the contact state (presence or absence of disconnection) of the voltage application probes P1 and P2 can be determined based on the detection values of the Hi-side disconnection voltage detection unit and the Lo-side disconnection current detection unit.

[0003] In addition, the applicant has disclosed a contact state determination device in Patent Document 2 below. The contact state determination device is configured to include a current supply unit, a voltage detection unit, a detection signal generation unit, a detection unit, a processing unit, an output unit, and a storage unit, and determines the contact state between a pair of electrodes of a secondary battery and a pair of probes.

[0004] In this contact state determination device, the current supply unit supplies an alternating current inspection current to the secondary battery and outputs a reference signal having the same frequency and the same phase as the alternating current inspection current to the detection signal generation unit. Further, the voltage detection unit detects an alternating voltage generated between the pair of probes in the supply state of the alternating current inspection current and outputs it as a detection voltage signal to the detection unit. In addition, the detection signal generation unit generates a detection signal having the same frequency as the input reference signal and a phase that is delayed by an arbitrary angle within a range of more than 0 degrees and less than 90 degrees with respect to the reference signal. In this case, the detection unit inputs the detection voltage signal and the detection signal, and synchronously detects the detection voltage signal with the detection signal, thereby generating a direct current detection voltage and outputting it to the processing unit.

[0005] In addition, the processing unit converts the DC detection voltage into voltage data, and calculates the impedance based on the voltage data and the known current value of the AC inspection current. Then, the processing unit reads out the threshold data stored in the storage unit and compares it with the calculated impedance. In the processing unit, as a result of this comparison, when the calculated impedance is greater than the threshold represented by the threshold data, the contact resistance between the pair of electrodes of the secondary battery and the pair of probes is large, so it is determined that the contact state is poor. When the calculated impedance is below the threshold, the contact resistance is small, so it is determined that the contact state is good. Then, the processing unit outputs the determination result to the output unit. Thus, the user can accurately grasp the contact state between the pair of electrodes of the secondary battery and the pair of probes based on the determination result displayed on the output unit.

[0006] Prior Art Documents

[0007] Patent Documents

[0008] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2007-171069 (pages 6 to 8, Figures 1 to 2 )

[0009] Patent Document 2: Japanese Patent No. 6358920 (pages 7 to 14, Figure 1 ) Summary of the Invention

[0010] Problems to be Solved by the Invention

[0011] However, the insulation withstand voltage test device disclosed in the above Patent Document 1 and the contact state determination device disclosed in the above Patent Document 2 have the following technical problems to be improved. That is, in the insulation withstand voltage test device disclosed in the above Patent Document 1, in order to determine the contact state between the voltage application probes P1 and P2 and the test object, it is configured to separately include a disconnection detection power supply, a Hi-side disconnection voltage detection unit, and a Lo-side disconnection current detection unit from the power supply unit (the withstand voltage test power supply and the insulation resistance test power supply). In addition, in the contact state determination device disclosed in the above Patent Document 2, in order to determine the contact state between a pair of probes and the determination target part (a pair of electrodes) of the secondary battery as the inspection object, it is necessary to configure a dedicated contact state determination device that separately includes a voltage detection unit, a detection signal generation unit, and a detection unit from the inspection device. Therefore, the devices disclosed in the above Patent Documents 1 and 2 both have the following technical problems: their manufacturing costs increase and their circuit scales become larger, so it is difficult to miniaturize the device as a whole, and it should be improved.

[0012] The present invention has been completed to improve this technical problem, and its main object is to provide an inspection device, a contact state determination device, and a contact state determination method that can reduce the manufacturing cost of the device and miniaturize the device.

[0013] Solution for solving problems

[0014] To achieve the above object, the inspection device of the present invention includes: an inspection voltage generation unit that generates an inspection voltage; a pair of probes that supply the inspection voltage generated by the inspection voltage generation unit between the pair of determination target parts in a state of contacting the pair of determination target parts in an inspection object having a capacitance between the pair of determination target parts; a current measurement unit that measures the current value of the current flowing between the pair of determination target parts in a state of supplying the inspection voltage between the pair of determination target parts; and a processing unit that executes an inspection process and a determination process. The inspection process is a process of inspecting whether the inspection object is good based on the current value of the current flowing between the pair of determination target parts measured by the current measurement unit, and the determination process is a process of determining whether the contact state between the pair of probes contacting the pair of determination target parts and the pair of determination target parts is good. The inspection device includes: a storage unit that stores the capacitance value of the capacitance between the pair of probes in a non-contact state with the pair of determination target parts and a threshold value that is a value equal to or less than the capacitance value of the capacitance between the pair of determination target parts; a discharge unit that executes a discharge process of discharging the charge accumulated in the capacitance between the pair of probes; and a capacitance measurement unit that measures the capacitance value of the capacitance between the pair of probes in a contact state with the pair of determination target parts. The processing unit executes the determination process after the inspection process, and in the discharge process, causes the capacitance measurement unit to measure the capacitance value of the capacitance between the pair of probes in a contact state with the pair of determination target parts based on the discharge time of the charge, and determines whether the contact state between the pair of probes and the pair of determination target parts is good based on whether the capacitance value obtained by subtracting the capacitance value of the capacitance between the pair of probes stored in the storage unit from the capacitance value measured by the capacitance measurement unit exceeds the threshold value stored in the storage unit.

[0015] In addition, the contact state determination device of the present invention includes a processing unit, which performs a determination process for determining whether the contact state between a pair of probes in contact with a pair of determination object parts in an inspection object having an electrostatic capacitance between the pair of determination object parts and the pair of determination object parts is good. The contact state determination device includes: a storage unit, which stores the capacitance value of the electrostatic capacitance between the pair of probes in a non-contact state with the pair of determination object parts and a threshold value specified as a value below the capacitance value of the electrostatic capacitance between the pair of determination object parts; and an electrostatic capacitance measuring unit, which measures the capacitance value of the electrostatic capacitance between the pair of probes in a contact state with the pair of determination object parts. In the determination process, the processing unit determines whether the contact state between the pair of probes and the pair of determination object parts is good based on whether the capacitance value obtained by subtracting the capacitance value of the electrostatic capacitance between the pair of probes stored in the storage unit from the capacitance value measured by the electrostatic capacitance measuring unit exceeds the threshold value stored in the storage unit.

[0016] In addition, the contact state judgment method of the present invention performs a judgment process for judging whether the contact state between a pair of probes in contact with a pair of judgment object parts in an inspection object having an electrostatic capacitance between the pair of judgment object parts and the pair of judgment object parts is good, wherein in the judgment process, the capacitance value of the electrostatic capacitance between the pair of probes in a contact state with the pair of judgment object parts is measured, and whether the contact state between the pair of probes and the pair of judgment object parts is good is judged based on whether the capacitance value obtained by subtracting the capacitance value of the electrostatic capacitance between the pair of probes in a non-contact state with the pair of judgment object parts from the measured capacitance value exceeds a threshold value specified as a value below the capacitance value of the electrostatic capacitance between the pair of judgment object parts.

[0017] Therefore, according to the inspection device, the contact state determination device, and the contact state determination method, the contact state can be determined only by using a simple structure of an electrostatic capacitance measuring unit and a processing unit, thereby reducing the manufacturing cost of the device and seeking miniaturization of the device, wherein the electrostatic capacitance measuring unit can measure the capacitance value of the electrostatic capacitance between a pair of probes in a contact state with a pair of determination target parts, and the processing unit compares the capacitance value obtained by subtracting the capacitance value of the electrostatic capacitance between a pair of probes in a non-contact state with a pair of determination target parts from the measured capacitance value with a threshold value. In addition, according to the inspection device, the capacitance value of the electrostatic capacitance between a pair of probes can be measured using the structure originally used for the inspection process implemented by the inspection device, as a result, the increase in the manufacturing cost of the device and the enlargement of the device can be avoided, and the capacitance value of the electrostatic capacitance between a pair of probes can be measured within the execution time of the discharge process that is originally required after the inspection process, as a result, the extension of the inspection time can be avoided.

[0018] In addition, to achieve the above object, the inspection device of the present invention includes: an inspection voltage generation unit that generates an inspection voltage; a pair of probes that supply the inspection voltage generated by the inspection voltage generation unit between the pair of determination target parts in a state of being in contact with the pair of determination target parts in an inspection object having a capacitance between the pair of determination target parts; a current measurement unit that measures the current value of the current flowing between the pair of determination target parts in a state where the inspection voltage is supplied between the pair of determination target parts; and a processing unit that executes an inspection process and a determination process. The inspection process is a process of inspecting whether the inspection object is in good condition based on the current value of the current flowing between the pair of determination target parts measured by the current measurement unit, and the determination process is a process of determining whether the contact state between the pair of probes in contact with the pair of determination target parts and the pair of determination target parts is good. The inspection device includes: a storage unit that stores a threshold value that is a value equal to or less than the capacitance value defined as the capacitance between the pair of probes in a state of being in contact with the pair of determination target parts; a discharge unit that executes a discharge process for discharging the charge accumulated in the capacitance between the pair of probes; and a capacitance measurement unit that measures the capacitance value of the capacitance between the pair of probes in a state of being in contact with the pair of determination target parts. The processing unit executes the determination process after the inspection process, and in the discharge process, causes the capacitance measurement unit to measure the capacitance value of the capacitance between the pair of probes in a state of being in contact with the pair of determination target parts based on the discharge time of the charge, and determines whether the contact state between the pair of probes and the pair of determination target parts is good based on whether the capacitance value measured by the capacitance measurement unit exceeds the threshold value stored in the storage unit.

[0019] In addition, the contact state determination device of the present invention includes a processing unit that executes a determination process for determining whether the contact state between a pair of probes in contact with a pair of determination target parts in an inspection object having a capacitance between the pair of determination target parts and the pair of determination target parts is good. The contact state determination device includes: a storage unit that stores a threshold value that is a value equal to or less than the capacitance value defined as the capacitance between the pair of probes in a state of being in contact with the pair of determination target parts; and a capacitance measurement unit that measures the capacitance value of the capacitance between the pair of probes in a state of being in contact with the pair of determination target parts. The processing unit determines whether the contact state between the pair of probes and the pair of determination target parts is good based on whether the capacitance value measured by the capacitance measurement unit exceeds the threshold value stored in the storage unit in the determination process.

[0020] In addition, the contact state determination method of the present invention performs determination processing for determining whether the contact state between a pair of probes in an inspection object having a capacitance between a pair of determination target parts is good, wherein, in the determination processing, the capacitance value of the capacitance between the pair of probes in a contact state with the pair of determination target parts is measured, and based on whether the measured capacitance value exceeds a threshold value that is set to be equal to or less than the capacitance value of the capacitance between the pair of probes in a contact state with the pair of determination target parts, it is determined whether the contact state between the pair of probes and the pair of determination target parts is good.

[0021] Therefore, according to this inspection device, contact state determination device, and contact state determination method, it is possible to determine the contact state only by using a simple configuration including a capacitance measurement unit and a processing unit. As a result, the manufacturing cost of the device can be reduced and the miniaturization of the device can be achieved. The capacitance measurement unit can measure the capacitance value of the capacitance between a pair of probes in a contact state with a pair of determination target parts, and the processing unit compares the measured capacitance value with a threshold value. In addition, according to this inspection device, it is possible to measure the capacitance value of the capacitance between a pair of probes by using the configuration originally used for the inspection processing implemented by the inspection device. As a result, an increase in the manufacturing cost of the device and the enlargement of the device can be avoided, and the capacitance value of the capacitance between a pair of probes can be measured within the execution time of the discharge processing that is originally required after the inspection processing. As a result, an extension of the inspection time can be avoided.

[0022] In addition, to achieve the above object, the inspection device of the present invention includes: an inspection voltage generation unit that generates an inspection voltage; a pair of probes that supply the inspection voltage generated by the inspection voltage generation unit between the pair of determination target parts in a state of being in contact with the pair of determination target parts in an inspection object having a capacitance between the pair of determination target parts; a current measurement unit that measures the current value of the current flowing between the pair of determination target parts in a state where the inspection voltage is supplied between the pair of determination target parts; a processing unit that executes an inspection process and a determination process, the inspection process being a process of inspecting whether the inspection object is in good condition based on the current value of the current flowing between the pair of determination target parts measured by the current measurement unit, the determination process being a process of determining whether the contact state between the pair of probes in contact with the pair of determination target parts and the pair of determination target parts is good, the inspection device includes: a discharge unit that executes a discharge process of discharging the charge of the capacitance accumulated between the pair of probes; a voltage measurement unit that can measure the voltage between the pair of probes in the discharge process, the discharge process being a process of discharging the charge of the capacitance accumulated between the pair of probes in a state of being in contact with the pair of determination target parts; and a storage unit that stores a reference value, and determines whether the contact state of the pair of probes is good by comparing the reference value with a comparison value determined based on the voltage value of the voltage between the pair of probes measured by the voltage measurement unit. The processing unit executes the determination process after the inspection process, determines the comparison value based on the voltage value of the voltage measured by the voltage measurement unit in the discharge process implemented by the discharge unit, and determines whether the contact state between the pair of probes and the pair of determination target parts is good by comparing the determined comparison value with the reference value stored in the storage unit.

[0023] In addition, the contact state determination device of the present invention includes a processing unit that executes a determination process for determining whether the contact state between a pair of probes that come into contact with a pair of determination target parts in an inspection object having a capacitance between the pair of determination target parts is good. The contact state determination device includes: a voltage measurement unit that can measure the voltage between the pair of probes during a discharge process, where the discharge process is a process of discharging the charge stored in the capacitance between the pair of probes in a contact state with the pair of determination target parts; and a storage unit that stores a reference value. The contact state of the pair of probes is determined to be good or not by comparing the reference value with a comparison value determined based on the voltage value of the voltage between the pair of probes measured by the voltage measurement unit. In the determination process, the processing unit determines the comparison value based on the voltage value of the voltage measured by the voltage measurement unit during the discharge process, and determines whether the contact state between the pair of probes and the pair of determination target parts is good by comparing the determined comparison value with the reference value stored in the storage unit.

[0024] In addition, the contact state determination method of the present invention executes a determination process for determining whether the contact state between a pair of probes that come into contact with a pair of determination target parts in an inspection object having a capacitance between the pair of determination target parts is good. In the determination process, the voltage between the pair of probes during a discharge process of discharging the charge stored in the capacitance between the pair of probes in a contact state with the pair of determination target parts is measured, a comparison value is determined based on the measured voltage value, and whether the contact state between the pair of probes and the pair of determination target parts is good is determined by comparing the reference value with the determined comparison value. The reference value is a value for determining whether the contact state of the pair of probes is good by comparing with the comparison value.

[0025] Specifically, in the inspection device of the present invention and the contact state determination device of the present invention, the storage unit stores the first time and the second time as the reference value. The first time is the discharge time when discharging the charge accumulated between the pair of probes in a non-contact state with the pair of determination target parts under the same discharge conditions as the discharge process. The second time is defined to be less than the discharge time when discharging the charge accumulated between the pair of determination target parts under the same discharge conditions as this discharge process. In the determination process, the processing unit determines the third time, which is the discharge time of the charge accumulated between the pair of probes in a contact state with the pair of determination target parts, as the comparison value based on the voltage value of the voltage measured by the voltage measurement unit, and determines whether the contact state between the pair of probes and the pair of determination target parts is good by comparing the fourth time obtained by subtracting the first time from the determined third time with the second time.

[0026] In addition, in the inspection device of the present invention and the contact state determination device of the present invention, the storage unit stores time A as the reference value. Time A is defined to be less than the discharge time when discharging the charge accumulated between the pair of probes in a contact state with the pair of determination target parts under the same discharge conditions as the discharge process. In the determination process, the processing unit determines time B, which is the discharge time of the charge accumulated between the pair of probes in a contact state with the pair of determination target parts, as the comparison value based on the voltage value of the voltage measured by the voltage measurement unit, and determines whether the contact state between the pair of probes and the pair of determination target parts is good by comparing the determined time B with time A.

[0027] In addition, in the inspection device and the contact state determination device of the present invention, the storage unit stores the first voltage drop rate and the second voltage drop rate as the reference values. The first voltage drop rate is the voltage drop rate between the pair of probes when discharging the charge accumulated between the pair of probes in a non-contact state with the pair of determination target parts under the same discharge conditions as the discharge process. The second voltage drop rate is defined to be equal to or less than the voltage drop rate between the pair of determination target parts when discharging the charge accumulated between the pair of determination target parts under the same discharge conditions as the discharge process. In the determination process, the processing unit determines the third voltage drop rate, which is the voltage drop rate between the pair of probes in the discharge process of the charge accumulated between the pair of probes in a contact state with the pair of determination target parts, as the comparison value based on the voltage value of the voltage measured by the voltage measurement unit, and determines whether the contact state between the pair of probes and the pair of determination target parts is good by comparing the fourth voltage drop rate obtained by subtracting the first voltage drop rate from the determined third voltage drop rate with the second voltage drop rate.

[0028] In addition, in the inspection device and the contact state determination device of the present invention, the storage unit stores the voltage drop rate A as the reference value. The voltage drop rate A is defined to be equal to or greater than the voltage drop rate between the pair of probes when discharging the charge accumulated between the pair of probes in a contact state with the pair of determination target parts under the same discharge conditions as the discharge process. In the determination process, the processing unit determines the voltage drop rate B, which is the voltage drop rate between the pair of probes in the discharge process of the charge accumulated between the pair of probes in a contact state with the pair of determination target parts, as the comparison value based on the voltage value of the voltage measured by the voltage measurement unit, and determines whether the contact state between the pair of probes and the pair of determination target parts is good by comparing the determined voltage drop rate B with the voltage drop rate A.

[0029] In addition, in the inspection device and the contact state determination device of the present invention, the storage unit stores the first voltage value and the second voltage value as the reference value. The first voltage value is the voltage value between the pair of probes at a time point after a predetermined time has elapsed since the start of discharging when discharging the charge accumulated between the pair of probes in a non-contact state with the pair of determination target parts under the same discharging conditions as the discharging process. The second voltage value is defined as being less than or equal to the voltage value between the pair of determination target parts at a time point after the predetermined time has elapsed since the start of discharging when discharging the charge accumulated between the pair of determination target parts under the same discharging conditions as the discharging process. In the determination process, the processing unit determines the third voltage value, which is the voltage value between the pair of probes at a time point after the predetermined time has elapsed since the start of the discharging process for the charge accumulated between the pair of probes in a contact state with the pair of determination target parts, as the comparison value based on the voltage value measured by the voltage measurement unit, and determines whether the contact state between the pair of probes and the pair of determination target parts is good by comparing the fourth voltage value obtained by subtracting the first voltage value from the determined third voltage value with the second voltage value.

[0030] In addition, in the inspection device and the contact state determination device of the present invention, the storage unit stores the voltage value A as the reference value. The voltage value A is defined as being less than or equal to the voltage value between the pair of probes at a time point after a predetermined time has elapsed since the start of discharging when discharging the charge accumulated between the pair of probes in a contact state with the pair of determination target parts under the same discharging conditions as the discharging process. In the determination process, the processing unit determines the voltage value B, which is the voltage value between the pair of probes at a time point after the predetermined time has elapsed since the start of the discharging process for the charge accumulated between the pair of probes in a contact state with the pair of determination target parts, as the comparison value based on the voltage value measured by the voltage measurement unit, and determines whether the contact state between the pair of probes and the pair of determination target parts is good by comparing the determined voltage value B with the voltage value A.

[0031] Therefore, according to the inspection device, the contact state determination device, and the contact state determination method, the contact state can be determined only by a simple configuration using a voltage measurement unit and a processing unit. As a result, the manufacturing cost of the device can be reduced, and the miniaturization of the device can be achieved. The voltage measurement unit can measure the voltage between a pair of probes during a discharge process that discharges the charge of the electrostatic capacitance accumulated between the pair of probes in a contact state with a pair of determination target parts. The processing unit determines a comparison value based on the measured voltage value and compares the determined comparison value with a reference value stored in the storage unit. In addition, according to this inspection device, the capacitance value of the electrostatic capacitance between a pair of probes can be measured using a configuration originally used for the inspection process implemented by the inspection device. As a result, an increase in the manufacturing cost of the device and the enlargement of the device can be avoided, and the capacitance value of the electrostatic capacitance between a pair of probes can be measured within the execution time of the discharge process that is originally required after the inspection process. As a result, an extension of the inspection time can be avoided.

[0032] Advantages of the Invention

[0033] According to the inspection device, the contact state determination device, and the contact state determination method of the present invention, the contact state can be determined by a simple configuration that only uses an electrostatic capacitance measurement unit capable of measuring the capacitance value of the electrostatic capacitance between a pair of probes in a contact state with a pair of determination target parts and a processing unit that compares the measured capacitance value with a threshold value, or a voltage measurement unit capable of measuring the voltage between a pair of probes during a discharge process that discharges the charge of the electrostatic capacitance accumulated between a pair of probes in a contact state with a pair of determination target parts, and a processing unit that determines a comparison value based on the measured voltage value and compares the determined comparison value with a reference value stored in the storage unit. Therefore, the manufacturing cost of the device can be reduced, and the miniaturization of the device can be achieved. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 is a configuration diagram of the insulation resistance measurement device 1 (1A, 1B) and the secondary battery DUT.

[0035] Figure 2 is an explanatory diagram illustrating a method for measuring the capacitance value of the electrostatic capacitance between the probes P1 and P2 when they are in a non-contact state with the positive terminal Tp and the metal layer Lm.

[0036] Figure 3 is an explanatory diagram illustrating a method for measuring the capacitance value of the electrostatic capacitance between the probes P1 and P2 when they are in a contact state with the positive terminal Tp and the metal layer Lm. DETAILED DESCRIPTION OF THE INVENTION

[0037] Hereinafter, embodiments of the inspection device, the contact state determination device, and the contact state determination method will be described with reference to the drawings.

[0038] (First Embodiment)

[0039] Figure 1 The insulation resistance measurement device 1 shown is an example of an inspection device also known as an insulation test device having a contact state determination device, and is configured to measure the insulation resistance between a pair of inspection object parts in an object to be inspected. Hereinafter, for example, an example will be described in which a secondary battery DUT is an object to be inspected, and the positive terminal Tp and the metal layer Lm of the secondary battery DUT are a pair of inspection object parts (determination object parts).

[0040] First, refer to Figure 1 to describe the configurations of the insulation resistance measurement device 1 and the secondary battery DUT.

[0041] The insulation resistance measurement device 1 is configured to include an inspection voltage generation circuit 2, a voltage division circuit 3, a voltage-current detection circuit 4, A / D converters 5a and 5b (denoted as "ADC" in this figure), a processing unit 6, a storage unit 7, an output unit 8, a discharge circuit 9, and probes P1 and P2.

[0042] The inspection voltage generation circuit 2 functions as an inspection voltage generation unit, inputs a commercial power supply (not shown) according to a control signal Ss1 output from the processing unit 6, converts it into a DC voltage, generates a pulse voltage, boosts the pulse voltage to generate a high-voltage pulse voltage, and then rectifies the high-voltage pulse voltage to generate an inspection DC voltage Va and outputs it. The voltage division circuit 3 outputs a divided voltage Vp obtained by dividing the inspection DC voltage Va output from the inspection voltage generation circuit 2 at a predetermined voltage division ratio.

[0043] The voltage-current detection circuit 4 inputs the divided voltage Vp output from the voltage division circuit 3, amplifies the divided voltage Vp at a prescribed gain, converts it into a voltage signal Sv representing the voltage value of the inspection DC voltage Va and outputs it. In addition, the voltage-current detection circuit 4 functions as a current measurement unit. As described later, when the inspection DC voltage Va is applied between the positive terminal Tp and the metal layer Lm of the secondary battery DUT, it inputs the current Ia flowing between the positive terminal Tp and the metal layer Lm, and converts it into a current signal Si representing the current value of the current Ia and outputs it.

[0044] The A / D converter 5a inputs the voltage signal Sv output from the voltage-current detection circuit 4, performs AC / DC conversion, and generates voltage value data Dv representing the voltage value of the voltage signal Sv and outputs it. In addition, the A / D converter 5b inputs the current signal Si output from the voltage-current detection circuit 4, performs AC / DC conversion, and generates current value data Di representing the current value of the current signal Si and outputs it.

[0045] The processing unit 6 inputs the voltage value data Dv output from the A / D converter 5a to calculate the voltage value of the DC voltage Va for inspection, and inputs the current value data Di output from the A / D converter 5b to calculate the current value of the current Ia. Further, the processing unit 6 calculates the resistance value of the insulation resistance Rd (to be described later) between the positive terminal Tp of the secondary battery DUT and the metal layer Lm based on the calculated voltage value of the DC voltage Va and the current value of the current Ia, and based on the calculated resistance value, performs an inspection process (insulation inspection process) for inspecting whether the insulation between the positive terminal Tp of the secondary battery DUT and the metal layer Lm is good. Further, the processing unit 6 performs a determination process for determining whether the contact state between the pair of probes P1 and P2 that are in contact with the positive terminal Tp and the metal layer Lm, which are a pair of determination target parts in the secondary battery DUT, and the positive terminal Tp and the metal layer Lm is good. Further, the processing unit 6 outputs a control signal Ss1 to control the start and stop of the output of the inspection DC voltage Va by the inspection voltage generation circuit 2. Further, the processing unit 6 outputs a control signal Ss2 to control the start and stop of the discharge by the discharge circuit 9. Further, the processing unit 6 also functions as a capacitance measurement unit to measure the capacitance values of the capacitance C3 and the capacitance Cd (to be described later).

[0046] Further, the processing unit 6 displays the resistance value of the insulation resistance Rd between the positive terminal Tp of the secondary battery DUT and the metal layer Lm, the inspection result regarding whether the insulation between the positive terminal Tp of the secondary battery DUT and the metal layer Lm is good, and the determination result regarding whether the contact state between the probes P1 and P2 and the positive terminal Tp and the metal layer Lm is good by outputting the display data Dd to the output unit 8.

[0047] The storage unit 7 is constituted of, for example, a semiconductor memory, a hard disk device, etc. Further, the storage unit 7 stores an operation program for the processing unit 6, the first data D1, the second data D2, and the third data D3. The first data D1 represents a threshold value that is a reference value as an insulation resistance value used in the inspection process implemented by the processing unit 6. The second data D2 represents a known capacitance value of the capacitance C3 (to be described later) between the pair of probes P1 and P2 in a non-contact state with the positive terminal Tp and the metal layer Lm, which are a pair of determination target parts (inspection target parts). The third data D3 represents a threshold value that is specified to be equal to or less than the known capacitance value of the capacitance Cd (to be described later) between the positive terminal Tp and the metal layer Lm and is used in the determination process implemented by the processing unit 6.

[0048] The output unit 8 is composed of a display device such as a display monitor, receives the display data Dd from the processing unit 6, and displays the measured value of the insulation resistance Rd between the positive terminal Tp of the secondary battery DUT and the metal layer Lm, the inspection result regarding whether the insulation of the secondary battery DUT is good, and the discrimination result regarding whether the contact states between the probes P1, P2 and the positive terminal Tp and the metal layer Lm are good, etc. It should be noted that, regarding the output unit 8, it may be composed of an external interface circuit instead of a display device. In this configuration, the output unit 8 outputs the results of the above-mentioned various processes to an external device via the external interface circuit.

[0049] The discharge circuit 9 is an example of a "discharge unit that performs a discharge process for discharging the charge of the electrostatic capacitance accumulated between a pair of probes", and is composed of a series circuit of a discharge resistor R1 and a switch SW, and is disposed between the high-voltage side terminal Th and the low-voltage side terminal Tl described later. In this case, in the discharge circuit 9, when the control signal Ss2 is output from the processing unit 6 to perform the discharge process, the switch SW is controlled to the on state, and the discharge resistor R1 is connected between the high-voltage side terminal Th and the low-voltage side terminal Tl. Therefore, during the discharge process, the discharge circuit 9 discharges the charge of the electrostatic capacitance (the electrostatic capacitance C3 and the electrostatic capacitance Cd of the secondary battery DUT described later) accumulated between the high-voltage side terminal Th and the low-voltage side terminal Tl (between the probes P1, P2) via the discharge resistor R1.

[0050] The probe P1 is connected to the high-voltage side terminal Th for inspection provided on the housing of the insulation resistance measuring device 1, and the probe P2 is connected to the low-voltage side terminal Tl for inspection provided on the housing of the insulation resistance measuring device 1.

[0051] It should be noted that, as Figure 1 shown, inside the insulation resistance measuring device 1, an internal capacitance C1 of the insulation resistance measuring device 1 equivalently exists between the high-voltage side terminal Th and the low-voltage side terminal Tl. In addition, a wiring capacitance C2 equivalently exists between the pair of probes P1, P2 in a state of being connected to the pair of high-voltage side terminal Th and low-voltage side terminal Tl. Hereinafter, the electrostatic capacitance obtained by adding the internal capacitance C1 and the wiring capacitance C2 is set as the above-mentioned "electrostatic capacitance C3".

[0052] In addition, a contact state discrimination device is constituted by a part of the configuration of the above-mentioned insulation resistance measuring device 1 (the inspection voltage generation circuit 2, the voltage dividing circuit 3, the voltage-current detection circuit 4, the A / D converter 5a, the processing unit 6, the storage unit 7, and the discharge circuit 9).

[0053] Next, the configuration of the secondary battery DUT to be inspected will be described. Figure 1Briefly shows the configuration of the secondary battery DUT. In this case, as an example, the secondary battery DUT includes a housing member, an electrode group, an electrolyte, and a pair of electrodes (the positive terminal Tp shown in this figure and a negative terminal not shown). In this case, the housing member is formed by molding a laminated film obtained by laminating a synthetic resin layer (e.g., polyethylene) on both sides of a metal layer (sealant) Lm into a bag shape or a cup shape, and the electrode group and the electrolyte are housed in the housing member. In addition, the positive terminal Tp is connected to the positive electrode in the electrode group, and the negative terminal is connected to the negative electrode in the electrode group. It should be noted that in this figure, the insulation resistance between the positive terminal Tp and the metal layer Lm is represented as the insulation resistance Rd.

[0054] Next, the operation of the insulation resistance measuring device 1 will be described together with the method for determining the contact state.

[0055] First, the generation method of the first data D1, the second data D2, and the third data D3 stored in the storage unit 7 will be described. As described above, the first data D1 is a threshold value as a reference value of the insulation resistance value used in the inspection process (insulation inspection) performed by the processing unit 6, and the lower limit resistance value of the insulation resistance Rd required for the secondary battery DUT as a qualified product is stored in the storage unit 7 in advance. In addition, as described above, the second data D2 represents the capacitance value of the electrostatic capacitance C3 between the probes P1 and P2 in the non-contact state between the positive terminal Tp and the metal layer Lm used in the discrimination process implemented by the processing unit 6. As will be described later, the capacitance value of the electrostatic capacitance C3 between the probes P1 and P2 measured in advance is stored in the storage unit 7 in advance. In addition, the third data D3 is a threshold value used in the discrimination process implemented by the processing unit 6, and is defined as a value equal to or less than a known capacitance value of the electrostatic capacitance Cd between the positive terminal Tp and the metal layer Lm (e.g., 80% of the known capacitance value of the electrostatic capacitance Cd) and is stored in the storage unit 7 in advance.

[0056] Next, refer to Figure 2, an example of a method for measuring the capacitance value of the electrostatic capacitance C3 between the probes P1 and P2 in a non-contact state with the positive terminal Tp and the metal layer Lm will be described. First, the base ends of the probes P1 and P2 are connected to the high-voltage side terminal Th and the low-voltage side terminal Tl, and the tip ends of the probes P1 and P2 are maintained in an open state not connected to the secondary battery DUT in advance. In this state, the operation unit (not shown) is operated to cause the processing unit 6 to output a control signal Ss1 to the inspection voltage generation circuit 2, whereby an inspection DC voltage Va having a predetermined voltage value V1 (for example, DC500V) is output from the inspection voltage generation circuit 2. In this case, the inspection DC voltage Va charges the above-described electrostatic capacitance C3, causing the voltage across the electrostatic capacitance C3 to rise toward the predetermined voltage value V1. At this time, the voltage-current detection circuit 4 outputs a voltage signal Sv to the A / D converter 5a based on the divided voltage Vp output from the voltage dividing circuit 3. Then, the A / D converter 5a generates voltage value data Dv based on the voltage signal Sv and outputs it to the processing unit 6.

[0057] Next, the processing unit 6 performs a discharge process at time t0 after the inspection DC voltage Va reaches the predetermined voltage value V1. At this time, the processing unit 6 stops the output of the control signal Ss1 to the inspection voltage generation circuit 2 to stop the output of the inspection DC voltage Va, outputs the control signal Ss2 to the discharge circuit 9, and starts measuring time with an internal timer. At this time, in the discharge circuit 9, the switch SW is controlled to be in the on state according to the control signal Ss2, so the discharge resistor R1 is connected between the high-voltage side terminal Th and the low-voltage side terminal Tl. As a result, the discharge resistor R1 gradually discharges the charge accumulated in the electrostatic capacitance C3 between the probes P1 and P2. Next, the processing unit 6 monitors the voltage value of the voltage across the electrostatic capacitance C3 represented by the voltage value data Dv (the voltage between the high-voltage side terminal Th and the low-voltage side terminal Tl: also the voltage between the probes P1 and P2). As the charge accumulated in the electrostatic capacitance C3 decreases, the voltage across the electrostatic capacitance C3 gradually decreases, and the measured value of the internal timer is obtained until the time point t1 when it reaches the predetermined voltage value V2 (for example, 30V). That is, the processing unit 6 shorts the two ends of the electrostatic capacitance C3 through the discharge resistor R1, thereby measuring the time T1 (the time from the moment of time point t0 to the moment of time point t1: unit s) required for the voltage across the electrostatic capacitance C3 to decrease from the voltage value V1 to the voltage value V2. Next, the processing unit 6 measures the capacitance value V of the electrostatic capacitance C3 according to the calculation formula shown in the following formula (1). C3 . Next, the processing unit 6 determines the capacitance value V of the electrostatic capacitance C3 that has been measured. C3As the second data D2 described above is stored in the storage unit 7. It should be noted that in this formula and the following formula (2), V R1 refers to the resistance value of the discharge resistor R1.

[0058] V C3 = -(1 / log e (V2 / V1)) × T1 / V R1 ……Formula (1)

[0059] Next, an example of the inspection process for the secondary battery DUT will be described.

[0060] In this inspection process, first, the base end portion of the probe P1 is connected to the high-voltage side terminal Th, and the base end portion of the probe P2 is connected to the low-voltage side terminal Tl. In addition, the tip end portion of the probe P1 is connected to the positive terminal Tp of the secondary battery DUT, and the tip end portion of the probe P2 is connected to the metal layer Lm of the secondary battery DUT. In this state, the processing unit 6 measures the resistance value of the insulation resistance Rd based on the current value of the current Ia flowing between a pair of determination target portions (between the positive terminal Tp and the metal layer Lm) measured by the voltage-current detection circuit 4, and checks whether the insulation of the secondary battery DUT is good based on the measured resistance value.

[0061] Specifically, the operation unit (not shown) is operated to instruct the processing unit 6 to start the inspection process. At this time, the processing unit 6 outputs a control signal Ss1 to the inspection voltage generation circuit 2, thereby causing the inspection DC voltage Va with a preset voltage value V1 to be output from the inspection voltage generation circuit 2. In this case, the inspection DC voltage Va charges the electrostatic capacitance C3 and the electrostatic capacitance Cd of the secondary battery DUT, whereby the voltage between the high-voltage side terminal Th and the low-voltage side terminal Tl rises toward the preset voltage value V1. At this time, the voltage-current detection circuit 4 outputs a voltage signal Sv to the A / D converter 5a based on the divided voltage Vp output from the voltage division circuit 3. Next, the A / D converter 5a generates voltage value data Dv based on the voltage signal Sv and outputs it to the processing unit 6. In addition, the voltage-current detection circuit 4 detects the current value of the current Ia flowing in the current path composed of the inspection voltage generation circuit 2, the high-voltage side terminal Th, the probe P1, the positive terminal Tp of the secondary battery DUT, the metal layer Lm of the secondary battery DUT, the probe P2, the low-voltage side terminal Tl, and the voltage-current detection circuit 4, and outputs a current signal Si to the A / D converter 5b. Next, the A / D converter 5b generates current value data Di based on the current signal Si and outputs it to the processing unit 6.

[0062] Next, at time t2 after the voltage value of the input voltage value data Dv reaches a predetermined voltage value V1, the processing unit 6 starts a resistance value measurement process for measuring the resistance value of the insulation resistance Rd. In this resistance value measurement process, the processing unit 6 measures the resistance value of the insulation resistance Rd between the positive terminal Tp of the secondary battery DUT and the metal layer Lm based on the voltage value of the input voltage value data Dv and the current value of the input current value data Di. Next, the processing unit 6 compares the measured resistance value with the threshold value represented by the first data D1 stored in the storage unit 7. When the measured resistance value exceeds the threshold value, it is determined that the insulation of the secondary battery DUT is good. When the measured resistance value is equal to or less than the threshold value, it is determined that the insulation of the secondary battery DUT is poor. Thus, the inspection process implemented by the processing unit 6 ends.

[0063] Next, at time t3 after the inspection process ends while the inspection DC voltage Va is maintained at a predetermined voltage value V1, the processing unit 6 performs a discharge process. In this discharge process, the processing unit 6 outputs a control signal Ss2 to the discharge circuit 9 in the same manner as the above discharge process, and discharges the charges accumulated in the electrostatic capacitance C3 and the electrostatic capacitance Cd between the probes P1 and P2 through the discharge resistor R1. In addition, the processing unit 6 measures the capacitance value of the electrostatic capacitance Cd during the execution of this discharge process.

[0064] Specifically, similar to the measurement of the capacitance value of the above-described electrostatic capacitance C3, the processing unit 6 stops the output of the control signal Ss1 to the inspection voltage generation circuit 2 to stop the output of the inspection DC voltage Va, outputs the control signal Ss2 to the discharge circuit 9, and starts measuring time with the internal timer. At this time, in the discharge circuit 9, the switch SW is controlled to be in the ON state according to the control signal Ss2, so the discharge resistor R1 is connected between the high voltage side terminal Th and the low voltage side terminal Tl. As a result, the discharge resistor R1 gradually discharges the charges stored in the electrostatic capacitance C3 and the electrostatic capacitance Cd between the probes P1 and P2. Next, the processing unit 6 monitors the voltage value of the voltage between the high voltage side terminal Th and the low voltage side terminal Tl (which is also the voltage between the probes P1 and P2) represented by the voltage value data Dv. As the charges stored in the electrostatic capacitance C3 and the electrostatic capacitance Cd decrease, the voltage between the high voltage side terminal Th and the low voltage side terminal Tl gradually decreases, and the measured value of the internal timer is obtained until the time point t4 when the voltage reaches a predetermined voltage value V2 (for example, 30V). That is, the processing unit 6 shorts the high voltage side terminal Th and the low voltage side terminal Tl through the discharge resistor R1, thereby measuring the time T2 (the time from the moment of the time point t3 to the moment of the time point t4: unit s) required for the voltage across the electrostatic capacitance C3 (which is also the electrostatic capacitance Cd) to decrease from the voltage value V1 of the inspection DC voltage Va to the voltage value V2, and measures the capacitance value of the electrostatic capacitance obtained by adding the electrostatic capacitance C3 and the electrostatic capacitance Cd according to the calculation formula represented by the first term on the right side of the following formula (2). Next, the processing unit 6 subtracts the capacitance value V of the electrostatic capacitance C3 stored in the storage unit 7 from the measured capacitance value of the electrostatic capacitance obtained by adding the electrostatic capacitance C3 and the electrostatic capacitance Cd according to the formula (2). C3 to measure the capacitance value V of the electrostatic capacitance Cd Cd . Next, the processing unit 6 makes the measured capacitance value V of the electrostatic capacitance Cd Cd stored in the storage unit 7.

[0065] V Cd = -(1 / log e (V2 / V1)) × T2 / V R1 - V C3 …… Formula (2)

[0066] Next, the processing unit 6 performs the measured capacitance value V of the electrostatic capacitance Cd CdIt is compared with the threshold value shown by the third data D3 stored in the storage unit 7. In this case, when there is poor contact between the probe P1 and the positive terminal Tp and thus the contact resistance is large, and / or when there is poor contact between the probe P2 and the metal layer Lm and thus the contact resistance is large, when measuring the capacitance value of the capacitance obtained by adding the electrostatic capacitance C3 and the electrostatic capacitance Cd, the capacitance value V of the electrostatic capacitance Cd Cd is measured to be small, and thus the capacitance value V of the electrostatic capacitance Cd measured by the arithmetic expression (2) Cd becomes small. Therefore, when the measured capacitance value V Cd exceeds the threshold value, the processing unit 6 determines that the contacts of the probes P1 and P2 with the positive terminal Tp and the metal layer Lm are good, and when the measured capacitance value V Cd is below the threshold value, it is determined that the contacts of the probes P1 and P2 with the positive terminal Tp and the metal layer Lm are poor.

[0067] Next, the processing unit 6 performs output processing. At this time, when the processing unit 6 determines that the result of the insulation check is good and the contact state is determined to be good, it includes the measured resistance value of the insulation resistance Rd, the result of the insulation check, and the determination result regarding the contact state of the probes P1 and P2 in the display data Dd and outputs it to the output unit 8. Thereby, the output unit 8 displays the resistance value of the insulation resistance Rd, the result of the insulation check, and the determination result regarding the contact state of the probes P1 and P2. On the other hand, when the processing unit 6 determines that the contact state is poor, it includes this determination result in the display data Dd and outputs it to the output unit 8. Thereby, the output unit 8 displays the main idea that the contact states of the probes P1 and P2 are poor and the main idea of preferably re-contacting the probes P1 and P2. Through the above, the insulation check implemented by the insulation resistance measuring device 1 is completed. As a result, the user of the insulation resistance measuring device 1 can grasp whether the secondary battery DUT is good based on the result of the insulation check displayed on the output unit 8.

[0068] In this way, in the insulation resistance measuring device 1, the contact state determination device, and the contact state determination method, in the determination process of determining whether the contact states of the probes P1 and P2 (a pair of probes) that contact the positive terminal Tp and the metal layer Lm in the secondary battery DUT having the electrostatic capacitance Cd between the positive terminal Tp and the metal layer Lm (a pair of determination target parts) are good, the capacitance value of the electrostatic capacitance between the probes P1 and P2 in the contact state with the positive terminal Tp and the metal layer Lm (the electrostatic capacitance obtained by adding the electrostatic capacitance C3 and the electrostatic capacitance Cd) is measured, and the capacitance value V of the electrostatic capacitance C3 between the probes P1 and P2 in the non-contact state with the positive terminal Tp and the metal layer Lm is subtracted from the measured capacitance value C3The obtained capacitance value exceeds the capacitance value V specified as the electrostatic capacitance Cd between the positive terminal Tp and the metal layer Lm. Cd When the threshold value (third data D3) of a value below 0.05447 / 0.001 is reached, the contact state between the probes P1 and P2 and the positive electrode terminal Tp and the metal layer Lm is determined to be good.

[0069] Therefore, according to the insulation resistance measuring device 1, the contact state determining device and the contact state determining method, the contact state can be determined only by using a simple structure of an electrostatic capacitance measuring unit (in this example, the processing unit 6) that can measure the capacitance value of the electrostatic capacitance between the probes P1 and P2 in a contact state with the positive terminal Tp and the metal layer Lm (the electrostatic capacitance obtained by adding the electrostatic capacitance C3 to the electrostatic capacitance Cd) and a processing unit (in this example, the processing unit 6) that compares the capacitance value obtained by subtracting the capacitance value of the electrostatic capacitance C3 between the probes P1 and P2 in a non-contact state with the positive terminal Tp and the metal layer Lm from the measured capacitance value with a threshold value, thereby reducing the manufacturing cost of the device and miniaturizing the device.

[0070] In addition, in the insulation resistance measuring device 1, the switch SW is controlled to be in the on state to perform a discharge process for discharging the charge accumulated in the electrostatic capacitance (electrostatic capacitance C3 and electrostatic capacitance Cd) between the probes P1 and P2 via the insulation resistance Rd, and in the discharge process, the capacitance value of the electrostatic capacitance between the probes P1 and P2 in contact with the positive terminal Tp and the metal layer Lm is measured based on the discharge time of the charge.

[0071] Therefore, according to the insulation resistance measuring device 1 , the capacitance value of the electrostatic capacitance between the probes P1 and P2 can be measured using the configuration originally used for the inspection process implemented by the insulation resistance measuring device 1 , thereby avoiding an increase in the manufacturing cost of the device and an increase in the size of the device.

[0072] Furthermore, according to the insulation resistance measuring device 1, by executing the discharge process after the inspection process, the capacitance value of the electrostatic capacitance between the probes P1 and P2 can be measured within the execution time of the discharge process that is originally required after the inspection process, thereby avoiding extension of the inspection time.

[0073] (Second embodiment)

[0074] Next, the configuration of the insulation resistance measuring device 1A will be described with reference to the drawings.

[0075] Figure 1The insulation resistance measurement device 1A shown is another example of an inspection device having a contact state determination device, and measures the insulation resistance between a pair of inspection target parts in the inspection target. Hereinafter, for example, an example will be described in which a secondary battery DUT is used as the inspection target, and the positive terminal Tp and the metal layer Lm of the secondary battery DUT are used as a pair of inspection target parts (determination target parts). It should be noted that the same reference numerals are given to the same components and functions as those of the insulation resistance measurement device 1, and repeated descriptions are omitted.

[0076] The insulation resistance measurement device 1A is configured to include an inspection voltage generation circuit 2, a voltage dividing circuit 3, a voltage-current detection circuit 4, A / D converters 5a and 5b, a processing unit 6A, a storage unit 7A, an output unit 8, a discharge circuit 9, and probes P1 and P2. In addition, a contact state determination device is constituted by a part of the constitution of the insulation resistance measurement device 1A (the inspection voltage generation circuit 2, the voltage dividing circuit 3, the voltage-current detection circuit 4, the A / D converters 5a, the processing unit 6A, the storage unit 7A, and the discharge circuit 9).

[0077] The processing unit 6A of the insulation resistance measurement device 1A is different from the processing unit 6. In the determination process of whether the contact state between the probes P1 and P2 (a pair of probes) that are in contact with the positive terminal Tp and the metal layer Lm in the secondary battery DUT having the electrostatic capacitance Cd between the positive terminal Tp and the metal layer Lm (a pair of determination target parts) is good, the capacitance value of the electrostatic capacitance between the probes P1 and P2 in the contact state with the positive terminal Tp and the metal layer Lm (the electrostatic capacitance obtained by adding the electrostatic capacitance C3 and the electrostatic capacitance Cd) is measured. When the measured capacitance value exceeds a threshold value (the fourth data Dt4 described later) that is less than or equal to the capacitance value of the electrostatic capacitance between the probes P1 and P2 in a state of good contact with the positive terminal Tp and the metal layer Lm, the contact state between the probes P1, P2 and the positive terminal Tp and the metal layer Lm is determined to be good.

[0078] In this case, similar to the processing unit 6 of the insulation resistance measurement device 1 described above, when at least one of the contact between the probe P1 and the positive terminal Tp is poor and the contact resistance is large, and the contact between the probe P2 and the metal layer Lm is poor and the contact resistance is large, when measuring the capacitance value of the electrostatic capacitance obtained by adding the electrostatic capacitance C3 and the electrostatic capacitance Cd, the capacitance value V of the electrostatic capacitance Cd Cd is measured to be small, so the capacitance value V of the electrostatic capacitance Cd measured by the above formula (2) CdIt becomes smaller. Therefore, when the measured capacitance value exceeds the threshold value, the processing unit 6A determines that the contact between the probes P1 and P2 and the positive terminal Tp and the metal layer Lm is good, and when the measured capacitance value is equal to or less than the threshold value, the processing unit 6A determines that the contact between the probes P1 and P2 and the positive terminal Tp and the metal layer Lm is poor.

[0079] The storage unit 7A stores the above-described first data D1, and different from the storage unit 7, stores fourth data D4, which represents a threshold value that is a value equal to or less than a known capacitance value (for example, 80% of the known capacitance value) of the electrostatic capacitance between the probes P1 and P2 in a state where the probes P1 and P2 are in good contact with the positive terminal Tp and the metal layer Lm, which are a pair of inspection target parts (discrimination target parts), and are used in the discrimination process implemented by the processing unit 6A. Note that the electrostatic capacitance between the probes P1 and P2 in a state where the probes P1 and P2 are in good contact with the positive terminal Tp and the metal layer Lm (the electrostatic capacitance obtained by adding the electrostatic capacitance C3 and the electrostatic capacitance Cd) is measured in the same manner as the above-described measurement method implemented by the insulation resistance measurement device 1, and is stored as the fourth data D4 in the storage unit 7A.

[0080] Next, the operation of the insulation resistance measurement device 1A will be described together with the method for discriminating the contact state. Note that the inspection process itself is executed in the same manner as the insulation resistance measurement device 1, and thus the description thereof will be omitted, and the operations different from the discrimination process of the insulation resistance measurement device 1 will be described.

[0081] In the discrimination process, the processing unit 6A measures the capacitance value of the electrostatic capacitance between the probes P1 and P2 in a state where the probes P1 and P2 are in contact with the positive terminal Tp and the metal layer Lm in the same manner as the measurement of the electrostatic capacitance of the electrostatic capacitance C3 implemented by the processing unit 6 (the electrostatic capacitance obtained by adding the electrostatic capacitance C3 and the electrostatic capacitance Cd).

[0082] Next, the processing unit 6A compares the measured capacitance value of the electrostatic capacitance between the probes P1 and P2 (the electrostatic capacitance obtained by adding the electrostatic capacitance C3 and the electrostatic capacitance Cd) (capacitance value V C3 with the capacitance value V Cd of the added value) with the threshold value indicated by the fourth data D4 stored in the storage unit 7A. In this case, when at least one of the contact between the probe P1 and the positive terminal Tp is poor and the contact resistance is large and the contact between the probe P2 and the metal layer Lm is poor and the contact resistance is large, when measuring the capacitance value of the electrostatic capacitance obtained by adding the electrostatic capacitance C3 and the electrostatic capacitance Cd, the capacitance value V of the electrostatic capacitance Cd Cdis measured to be small, so the capacitance value (capacitance value V obtained by adding capacitance C3 and capacitance Cd) of the electrostatic capacitance between the measured probes P1 and P2 becomes smaller. Therefore, when the measured capacitance value (the added value of capacitance value V and capacitance value V) exceeds the threshold value, the processing unit 6A determines that the contact between the probes P1 and P2 and the positive terminal Tp and the metal layer Lm is good, and when the measured capacitance value (the added value of capacitance value V and capacitance value V) is below the threshold value, it discriminates that the contact between the probes P1 and P2 and the positive terminal Tp and the metal layer Lm is poor. C3 and capacitance value V Cd of the added value) becomes smaller. Therefore, when the measured capacitance value (the added value of capacitance value V and capacitance value V) exceeds the threshold value, the processing unit 6A determines that the contact between the probes P1 and P2 and the positive terminal Tp and the metal layer Lm is good, and when the measured capacitance value (the added value of capacitance value V and capacitance value V) is below the threshold value, it discriminates that the contact between the probes P1 and P2 and the positive terminal Tp and the metal layer Lm is poor. C3 and capacitance value V Cd of the added value) exceeds the threshold value, the processing unit 6A determines that the contact between the probes P1 and P2 and the positive terminal Tp and the metal layer Lm is good, and when the measured capacitance value (the added value of capacitance value V and capacitance value V) is below the threshold value, it discriminates that the contact between the probes P1 and P2 and the positive terminal Tp and the metal layer Lm is poor. C3 and capacitance value V Cd of the added value) is below the threshold value, it discriminates that the contact between the probes P1 and P2 and the positive terminal Tp and the metal layer Lm is poor.

[0083] In this way, in the insulation resistance measurement device 1A, the contact state discrimination device, and the contact state discrimination method, in the discrimination process of determining whether the contact state between the probes P1 and P2 (a pair of probes) in contact with the positive terminal Tp and the metal layer Lm in the secondary battery DUT having the electrostatic capacitance Cd between the positive terminal Tp and the metal layer Lm (a pair of discrimination target parts) is good, the capacitance value of the electrostatic capacitance between the probes P1 and P2 in the contact state with the positive terminal Tp and the metal layer Lm (the electrostatic capacitance obtained by adding the electrostatic capacitance C3 and the electrostatic capacitance Cd) is measured. When the measured capacitance value exceeds the threshold value (the fourth data Dt4) which is specified to be below the capacitance value of the electrostatic capacitance between the probes P1 and P2 in the contact state with the positive terminal Tp and the metal layer Lm, the contact state between the probes P1 and P2 and the positive terminal Tp and the metal layer Lm is determined to be good.

[0084] Therefore, according to the insulation resistance measurement device 1A, the contact state discrimination device, and the contact state discrimination method, it is possible to determine the contact state only by using a simple configuration of an electrostatic capacitance measurement unit (in this example, the processing unit 6A) that can measure the capacitance value of the electrostatic capacitance between the probes P1 and P2 in the contact state with the positive terminal Tp and the metal layer Lm (the electrostatic capacitance obtained by adding the electrostatic capacitance C3 and the electrostatic capacitance Cd) and a processing unit (in this example, the processing unit 6A) that compares the measured capacitance value with the threshold value. Therefore, the manufacturing cost of the device can be reduced, and the miniaturization of the device can be achieved.

[0085] In addition, in the insulation resistance measurement device 1A, similar to the insulation resistance measurement device 1, the capacitance value of the electrostatic capacitance between the probes P1 and P2 can be measured by using the configuration originally used for the inspection process implemented by the insulation resistance measurement device 1A. As a result, an increase in the manufacturing cost of the device and the enlargement of the device can be avoided.

[0086] In addition, in the insulation resistance measurement device 1A, similar to the insulation resistance measurement device 1, the capacitance value of the electrostatic capacitance between the probes P1 and P2 can be measured during the execution time of the discharge process that is originally required after the inspection process by performing the discharge process after the inspection process. As a result, an extension of the inspection time can be avoided.

[0087] (Third Embodiment)

[0088] Next, with reference to the drawings, the configuration of the insulation resistance measurement device 1B will be described.

[0089] As described above, in the above insulation resistance measurement device 1, the following configuration is adopted: the capacitance value of the electrostatic capacitance between a pair of probes in a contact state with a pair of determination target parts is measured by the "electrostatic capacitance measurement unit", and based on the measured "capacitance value", the "capacitance value of the electrostatic capacitance between a pair of probes in a non-contact state with a pair of determination target parts" and the "threshold value that is defined as a value equal to or less than the capacitance value of the electrostatic capacitance between a pair of determination target parts" stored in the "storage unit" in advance, it is determined whether the contact state between the pair of probes and the pair of determination target parts is good. In addition, in the above insulation resistance measurement device 1A, the following configuration is adopted: the capacitance value of the electrostatic capacitance between a pair of probes in a contact state with a pair of determination target parts is measured by the "electrostatic capacitance measurement unit", and based on the measured "capacitance value" and the "threshold value that is defined as a value equal to or less than the capacitance value of the electrostatic capacitance between a pair of probes in a contact state with a pair of determination target parts" stored in the "storage unit" in advance, it is determined whether the contact state between the pair of probes and the pair of determination target parts is good.

[0090] Instead of the configuration and method of determining whether the contact state is good based on the "capacitance value of the electrostatic capacitance" like these insulation resistance measurement devices 1 and 1A, the following configuration and method can also be adopted: the voltage value of the voltage between a pair of probes during the discharge process of discharging the charge of the electrostatic capacitance accumulated between the pair of probes is measured by the "voltage measurement unit", and based on the measured "voltage value" and the "reference value stored in the'storage unit' for determining whether the contact state of the pair of probes is good by comparing with a comparison value determined based on the voltage value of the voltage between the pair of probes measured by the voltage measurement unit", it is determined whether the contact state between the pair of probes and the pair of determination target parts is good.

[0091] As an example, Figure 1The insulation resistance measurement device 1B shown is another example of an inspection device having a contact state determination device, and measures the insulation resistance between a pair of inspection target parts in the inspection target. Hereinafter, for example, an example in which a secondary battery DUT is used as the inspection target, and the positive terminal Tp and the metal layer Lm of the secondary battery DUT are used as a pair of inspection target parts (determination target parts) will be described. It should be noted that the same reference numerals are given to the same configurations and functions as those of the insulation resistance measurement devices 1 and 1A, and redundant descriptions are omitted. In addition, the inspection process itself is executed in the same manner as that of the insulation resistance measurement devices 1 and 1A, so its description is omitted, and the operations different from the determination processes of the insulation resistance measurement devices 1 and 1A will be described.

[0092] This insulation resistance measurement device 1B is configured to include a processing unit 6B and a storage unit 7B instead of the processing units 6 and 6A and the storage units 7 and 7A in the above-mentioned insulation resistance measurement devices 1 and 1A. In this case, in this insulation resistance measurement device 1B, a contact state determination device is constituted by an inspection voltage generation circuit 2, a voltage dividing circuit 3, a voltage-current detection circuit 4, an A / D converter 5a, a processing unit 6B, a storage unit 7B, and a discharge circuit 9. In addition, in this insulation resistance measurement device 1B, a voltage measurement unit is constituted by an inspection voltage generation circuit 2, a voltage dividing circuit 3, a voltage-current detection circuit 4, an A / D converter 5a, and a processing unit 6B.

[0093] The processing unit 6B of this insulation resistance measurement device 1B is different from the processing units 6 and 6A. In the determination process of determining whether the contact state between the probes P1 and P2 (a pair of probes) in contact with the positive terminal Tp and the metal layer Lm in the secondary battery DUT having the electrostatic capacitance Cd between the positive terminal Tp and the metal layer Lm (a pair of determination target parts) is good, based on the voltage value of the voltage between the probes P1 and P2 in the discharge process of discharging the charge of the electrostatic capacitance (the electrostatic capacitance obtained by adding the electrostatic capacitance C3 and the electrostatic capacitance Cd) accumulated between the probes P1 and P2 in the contact state with the positive terminal Tp and the metal layer Lm, a "comparison value" is determined, and by comparing the determined "comparison value" with the "reference value" stored in the storage unit 7B, it is determined whether the contact state between the probes P1 and P2 and the positive terminal Tp and the metal layer Lm is good. Specifically, in this insulation resistance measurement device 1B, the contact state is determined according to any one of the following six processing procedures.

[0094] As a first processing step, a "first time" (the time required for the voltage across the electrostatic capacitance C3 to drop from the voltage value V1 to the voltage value V2), which is the discharge time when discharging the charge accumulated between the probes P1 and P2 in a non-contact state with the positive terminal Tp and the metal layer Lm under the same discharge conditions as the discharge process implemented by the discharge section, and a "second time" defined to be less than the discharge time when discharging the charge accumulated between the positive terminal Tp and the metal layer Lm under the same discharge conditions as the discharge process implemented by the discharge section (the time required for the voltage across the electrostatic capacitance Cd to drop from the voltage value V1 to the voltage value V2 when discharging the charge accumulated in the electrostatic capacitance Cd under the same discharge conditions as the discharge process implemented by the discharge section) are set as a "reference value", and the time data Dt1 of the "first time" and the time data Dt2 of the "second time" are stored in advance in the storage section 7B.

[0095] In addition, in the discrimination process, the processing section 6B determines, based on the voltage value which is the voltage measured by the voltage measurement section, a "third time" (the time required for the voltage between the probes P1 and P2 to drop from the voltage value V1 to the voltage value V2), which is the discharge time of the charge accumulated between the probes P1 and P2 in a contact state with the positive terminal Tp and the metal layer Lm, as a "comparison value", and discriminates whether the contact states between the probes P1 and P2 and the positive terminal Tp and the metal layer Lm are good by comparing the "fourth time" obtained by subtracting the "first time" determined based on the time data Dt1 from the determined "third time" with the "second time" determined based on the time data Dt2.

[0096] In this case, when at least one of the contact between the probe P1 and the positive terminal Tp is poor and the contact resistance is large, and the contact between the probe P2 and the metal layer Lm is poor and the contact resistance is large (hereinafter, also referred to as "when any one of the probes P1 and P2 has a poor contact"), the charge accumulated in the electrostatic capacitance Cd cannot be properly discharged by the discharge section, and compared with the state where the probes P1 and P2 are in good contact with the positive terminal Tp and the metal layer Lm respectively, the charge discharged by the discharge process becomes less, and the determined "third time (discharge time)" becomes a short time. Therefore, the processing section 6B determines that the contact between the probes P1 and P2 and the positive terminal Tp and the metal layer Lm is good when the "fourth time" obtained by subtracting the "first time" from the determined "third time" exceeds the "second time", and determines that the contact between the probes P1 and P2 and the positive terminal Tp and the metal layer Lm is poor when the "fourth time" is less than or equal to the "second time".

[0097] In addition, as a second processing procedure, a "time A" which is defined as the discharge time when discharging the charge accumulated between the probes P1 and P2 in contact with the positive terminal Tp and the metal layer Lm under the same discharge conditions as the discharge process implemented by the discharge unit (when discharging the charge accumulated in the capacitance obtained by adding the capacitance C3 and the capacitance Cd, the time required for the voltage across the capacitance to decrease from the voltage value V1 to the voltage value V2) is set as the "reference value", and the time data Dta of the "time A" is pre-stored in the storage unit 7B.

[0098] In addition, in the discrimination process, the processing unit 6B determines, based on the voltage value which is the voltage measured by the voltage measurement unit, a "time B" which is the discharge time of the charge accumulated between the probes P1 and P2 in contact with the positive terminal Tp and the metal layer Lm (when discharging the charge accumulated in the capacitance obtained by adding the capacitance C3 and the capacitance Cd, the time required for the voltage across the capacitance to decrease from the voltage value V1 to the voltage value V2) as the "comparison value", and discriminates whether the contact states between the probes P1 and P2 and the positive terminal Tp and the metal layer Lm are good by comparing the determined "time B" with the "time A" determined based on the time data Dta.

[0099] In this case, when either of the probes P1 and P2 has a poor contact, the charge accumulated in the capacitance Cd cannot be properly discharged by the discharge unit. Compared with the state where the probes P1 and P2 are in good contact with the positive terminal Tp and the metal layer Lm respectively, the charge discharged by the discharge process becomes less, and the determined "time B (discharge time)" becomes a short time. Therefore, the processing unit 6B discriminates that the contacts between the probes P1 and P2 and the positive terminal Tp and the metal layer Lm are good when the "time B" exceeds the "time A", and discriminates that the contacts between the probes P1 and P2 and the positive terminal Tp and the metal layer Lm are poor when the "time B" is equal to or less than the "time A".

[0100] In addition, as a third processing procedure, a "first decline rate" which is the decline rate of the voltage between the probes P1 and P2 when discharging the charge accumulated between the probes P1 and P2 in a non-contact state with the positive terminal Tp and the metal layer Lm under the same discharge conditions as the discharge processing implemented by the discharge unit (the ratio of the time required for the voltage across the electrostatic capacitance C3 to decrease from the voltage value V1 to the voltage value V2 to the difference between the voltage value V1 and the voltage value V2), and a decline rate of the voltage between the positive terminal Tp and the metal layer Lm when discharging the charge accumulated between the positive terminal Tp and the metal layer Lm under the same discharge conditions as the discharge processing implemented by the discharge unit (when discharging the charge accumulated in the electrostatic capacitance Cd under the same discharge conditions as the discharge processing implemented by the discharge unit, the ratio of the time required for the voltage across the electrostatic capacitance Cd to decrease from the voltage value V1 to the voltage value V2 to the difference between the voltage value V1 and the voltage value V2), which is below the "second decline rate", are set as the "reference value", and the decline rate data Dr1 of the "first decline rate" and the decline rate data Dr2 of the "second decline rate" are pre-stored in the storage unit 7B.

[0101] In addition, in the discrimination process, the processing unit 6B determines, based on the voltage value of the voltage measured by the voltage measurement unit, a "third decline rate" which is the decline rate of the voltage between the probes P1 and P2 in the discharge process of the charge accumulated between the probes P1 and P2 in a contact state with the positive terminal Tp and the metal layer Lm (the ratio of the time required for the voltage between the probes P1 and P2 to decrease from the voltage value V1 to the voltage value V2 to the difference between the voltage value V1 and the voltage value V2) as the "comparison value", and discriminates whether the contact state between the probes P1 and P2 and the positive terminal Tp and the metal layer Lm is good by comparing the "fourth decline rate" obtained by subtracting the "first decline rate" determined based on the decline rate data Dr1 from the determined "third decline rate" with the "second decline rate" determined based on the decline rate data Dr2.

[0102] In this case, when either of the probes P1 and P2 has poor contact, the charge accumulated in the electrostatic capacitance Cd cannot be properly discharged by the discharge unit. Compared with the state where the probes P1 and P2 are in good contact with the positive terminal Tp and the metal layer Lm respectively, the charge discharged through the discharge process is less and the discharge time becomes short. As a result, the determined decline rate of the voltage becomes higher. Therefore, the processing unit 6B discriminates that the contact between the probes P1 and P2 and the positive terminal Tp and the metal layer Lm is good when the "fourth decline rate" obtained by subtracting the "first decline rate" from the determined "third decline rate" exceeds the "second decline rate", and discriminates that the contact between the probes P1 and P2 and the positive terminal Tp and the metal layer Lm is poor when the "fourth decline rate" is below the "second decline rate".

[0103] In addition, as a fourth processing step, a "decrease rate A" (the ratio of the time required for the voltage across the electrostatic capacitance obtained by adding electrostatic capacitance C3 and electrostatic capacitance Cd to decrease from voltage value V1 to voltage value V2 to the difference between voltage value V1 and voltage value V2 when discharging the charge accumulated between probes P1 and P2 under the same discharge conditions as the discharge process implemented by the discharge section) that is above the decrease rate of the voltage between probes P1 and P2 when discharging the charge accumulated between probes P1 and P2 in contact with the positive terminal Tp and the metal layer Lm under the same discharge conditions as the discharge process implemented by the discharge section is set as the "reference value", and the decrease rate data Dra of this "decrease rate A" is pre-stored in the storage section 7B.

[0104] In addition, in the discrimination process, the processing section 6B determines, based on the voltage value of the voltage measured by the voltage measurement section, a "decrease rate B" (the ratio of the time required for the voltage across the electrostatic capacitance obtained by adding electrostatic capacitance C3 and electrostatic capacitance Cd to decrease from voltage value V1 to voltage value V2 to the difference between voltage value V1 and voltage value V2 when discharging the charge accumulated between probes P1 and P2) as the "comparison value" for the decrease rate of the voltage between probes P1 and P2 in the discharge process of the charge accumulated between probes P1 and P2 in contact with the positive terminal Tp and the metal layer Lm. By comparing the determined "decrease rate B" with the "decrease rate A" determined based on the decrease rate data Dra, it is discriminated whether the contact states between probes P1 and P2 and the positive terminal Tp and the metal layer Lm are good.

[0105] In this case, when either of probes P1 and P2 has poor contact, the charge accumulated in the electrostatic capacitance Cd cannot be properly discharged by the discharge section. Compared with the state where probes P1 and P2 are in good contact with the positive terminal Tp and the metal layer Lm respectively, the amount of charge discharged through the discharge process becomes less, and the determined "time B (discharge time)" becomes shorter. As a result, the determined decrease rate of the voltage becomes higher. Therefore, when the "decrease rate B" exceeds the "decrease rate A", the processing section 6B determines that the contacts between probes P1 and P2 and the positive terminal Tp and the metal layer Lm are good, and when the "decrease rate B" is equal to or less than the "decrease rate A", the processing section 6B determines that the contacts between probes P1 and P2 and the positive terminal Tp and the metal layer Lm are poor.

[0106] In addition, as a fifth processing procedure, a "first voltage value", which is the voltage value of the voltage between the probes P1 and P2 at a time point after a predetermined time has elapsed since the start of discharging when discharging the charge accumulated between the probes P1 and P2 in a non-contact state with the positive terminal Tp and the metal layer Lm (the charge accumulated in the electrostatic capacitor C3) under the same discharging conditions as the discharging process implemented by the discharging unit, and a "second voltage value", which is defined as being below the voltage value of the voltage between the positive terminal Tp and the metal layer Lm at a time point after a predetermined time has elapsed since the start of discharging when discharging the charge accumulated between the positive terminal Tp and the metal layer Lm (the charge accumulated in the electrostatic capacitor Cd) under the same discharging conditions as the discharging process implemented by the discharging unit, are set as "reference values", and the voltage value data Dv1 of the "first voltage value" and the voltage value data Dv2 of the "second voltage value" are stored in advance in the storage unit 7B. In this case, regarding the above-mentioned "predetermined time", it is defined as a time shorter than the discharging time of the charge accumulated between the probes P1 and P2 in a non-contact state with the positive terminal Tp and the metal layer Lm (for example, a time about 1 / 2 of the discharging time).

[0107] In addition, in the determination process, the processing unit 6B determines a "third voltage value", which is the voltage value of the voltage between the probes P1 and P2 at a time point after a predetermined time has elapsed since the start of the discharging process when discharging the charge accumulated between the probes P1 and P2 in a contact state with the positive terminal Tp and the metal layer Lm, as a "comparison value" based on the voltage value measured by the voltage measurement unit, and determines whether the contact state between the probes P1 and P2 and the positive terminal Tp and the metal layer Lm is good by comparing a "fourth voltage value", which is obtained by subtracting the "first voltage value" determined based on the voltage value data Dv1 from the determined "third voltage value", with the "second voltage value" determined based on the voltage value data Dv2.

[0108] In this case, when either of the probes P1 and P2 has a poor contact, the charge accumulated in the electrostatic capacitance Cd cannot be properly discharged by the discharge unit. Compared with the state where the probes P1 and P2 are in good contact with the positive terminal Tp and the metal layer Lm respectively, the amount of charge discharged through the discharge process is less. As a result, the voltage value between the probes P1 and P2 decreases within a short period of time. Therefore, when either of the probes P1 and P2 has a poor contact, compared with the state where the probes P1 and P2 are in good contact with the positive terminal Tp and the metal layer Lm respectively, the voltage value between the probes P1 and P2 at the time point after "a predetermined time" has elapsed since the start of the discharge process is lower. Therefore, the processing unit 6B determines that the contacts of the probes P1 and P2 with the positive terminal Tp and the metal layer Lm are good when the "fourth voltage value" obtained by subtracting the "first voltage value" from the determined "third voltage value" exceeds the "second voltage value", and determines that the contacts of the probes P1 and P2 with the positive terminal Tp and the metal layer Lm are poor when the "fourth voltage value" is equal to or lower than the "second voltage value".

[0109] Furthermore, as the sixth processing procedure, a "voltage value A" that is equal to or lower than the voltage value between the probes P1 and P2 at the time point after a predetermined time has elapsed since the start of the discharge when discharging the charge accumulated between the probes P1 and P2 (the charge accumulated in the electrostatic capacitance obtained by adding the electrostatic capacitance C3 and the electrostatic capacitance Cd) under the same discharge conditions as the discharge process implemented by the discharge unit while the probes P1 and P2 are in contact with the positive terminal Tp and the metal layer Lm is set as the "reference value", and the voltage value data Dva of this "voltage value A" is pre-stored in the storage unit 7B. In this case, regarding the above-mentioned "predetermined time", it is stipulated as a time shorter than the discharge time of the charge accumulated between the probes P1 and P2 while the probes P1 and P2 are in contact with the positive terminal Tp and the metal layer Lm (for example, about 1 / 2 of the discharge time).

[0110] Furthermore, in the determination process, the processing unit 6B determines the "voltage value B", which is the voltage value between the probes P1 and P2 at the time point after a predetermined time has elapsed since the start of the discharge process of the charge accumulated between the probes P1 and P2 (the charge accumulated in the electrostatic capacitance obtained by adding the electrostatic capacitance C3 and the electrostatic capacitance Cd) while the probes P1 and P2 are in contact with the positive terminal Tp and the metal layer Lm, as the "comparison value" based on the voltage value measured by the voltage measurement unit. By comparing the determined "voltage value B" with the "voltage value A" determined based on the voltage value data Dva, it is determined whether the contact state between the probes P1 and P2 and the positive terminal Tp and the metal layer Lm is good.

[0111] In this case, when either of the probes P1 and P2 has a poor contact, the charge accumulated in the electrostatic capacitance Cd cannot be properly discharged by the discharge unit. Compared with the state where the probes P1 and P2 are in good contact with the positive terminal Tp and the metal layer Lm respectively, the amount of charge discharged by the discharge process is less. As a result, the voltage value between the probes P1 and P2 decreases within a short period of time. Therefore, when either of the probes P1 and P2 has a poor contact, compared with the state where the probes P1 and P2 are in good contact with the positive terminal Tp and the metal layer Lm respectively, the voltage value between the probes P1 and P2 at the time point after "a predetermined time" has elapsed since the start of the discharge process is lower. Therefore, the processing unit 6B determines that the probes P1 and P2 are in good contact with the positive terminal Tp and the metal layer Lm when the "voltage value B" of the processing unit 6B exceeds the "voltage value A", and determines that the probes P1 and P2 are in poor contact with the positive terminal Tp and the metal layer Lm when the "voltage value B" is equal to or lower than the "voltage value A".

[0112] Thus, in this insulation resistance measuring device 1B, the contact state determination device, and the contact state determination method, in the determination process of determining whether the contact state between the probes P1 and P2 (a pair of probes) that are in contact with the positive terminal Tp and the metal layer Lm in the secondary battery DUT having the electrostatic capacitance Cd between the positive terminal Tp and the metal layer Lm (a pair of determination target parts) is good or not, the voltage between the probes P1 and P2 in the discharge process of discharging the charge of the electrostatic capacitance between the probes P1 and P2 in the state of being in contact with the positive terminal Tp and the metal layer Lm (the electrostatic capacitance obtained by adding the electrostatic capacitance C3 and the electrostatic capacitance Cd) is measured, a comparison value is determined based on the measured voltage value, and whether the contact state between the probes P1 and P2 and the positive terminal Tp and the metal layer Lm is good or not is determined by comparing the determined comparison value with the reference value stored in the storage unit.

[0113] Therefore, according to the insulation resistance measuring device 1B, the contact state determination device, and the contact state determination method, the contact state can be determined only by using a simple configuration including a voltage measurement unit (processing unit 6B in this example) that measures the voltage between the probes P1 and P2 during the discharge process of discharging the charge of the capacitance (the capacitance obtained by adding the electrostatic capacitance C3 and the electrostatic capacitance Cd) accumulated between the probes P1 and P2 in contact with the positive terminal Tp and the metal layer Lm, and a processing unit (processing unit 6B in this example) that determines a comparison value based on the measured voltage value and compares the determined comparison value with the reference value stored in the storage unit 7B. Therefore, the manufacturing cost of the device can be reduced, and the miniaturization of the device can be achieved. In addition, according to the insulation resistance measuring device 1B, the voltage value of the voltage between P1 and P2 during the discharge process can be measured by using the configuration originally used for the inspection process. As a result, an increase in the manufacturing cost of the device and the enlargement of the device can be avoided, and the voltage value of the voltage between the probes P1 and P2 can be measured within the execution time of the discharge process that is originally required after the inspection process. As a result, the extension of the inspection time can be avoided.

[0114] It should be noted that the above configurations and methods are not limited, and appropriate modifications can be made. For example, regarding the second data D2 stored in the storage unit 7 and the fourth data D4 stored in the storage unit 7A, etc., an example in which they are stored in the storage unit 7 (7A) before the execution of the inspection process implemented by the insulation resistance measuring device 1 (1A) has been described. However, as part of the inspection process, the second data D2 (fourth data D4) can also be generated and stored in the storage unit 7 (storage unit 7A) each time.

[0115] In addition, in the insulation resistance measuring devices 1 and 1A, the processing units 6 and 6A are configured to also function as an electrostatic capacitance measurement unit, but the processing unit and the electrostatic capacitance measurement unit can also be separately configured. Similarly, in the insulation resistance measuring device 1B, the processing unit 6B is configured to also function as a voltage measurement unit, but the processing unit and the voltage measurement unit can also be separately configured. In addition, regarding the method for measuring the electrostatic capacitance implemented by the electrostatic capacitance measurement unit (processing units 6 and 6A), it is not limited to the above method. For example, any known measurement method such as the constant current discharge method can be adopted.

[0116] Moreover, an example of a determination process for determining the contact between the discrimination probes P1 and P2 and the positive terminal Tp and the metal layer Lm in the discharge process after the inspection process has been described. However, the determination process can also be performed before or during the inspection process separately from the discharge process after the inspection process. In addition, an example applied to an insulation resistance measurement device has been described, but it can also be applied to a DC withstand voltage test device. Moreover, it can also be widely applied to a measurement device that brings a pair of probes into contact with a pair of discrimination target parts (contact target parts) when measuring voltage, current, power values, etc.

[0117] Industrial availability

[0118] According to the invention of the present application, the contact state can be determined only by using a simple configuration of the capacitance measurement unit and the processing unit or a simple configuration of the voltage measurement unit and the processing unit. Therefore, the manufacturing cost of the device can be reduced, and miniaturization of the device can be achieved. As a result, the invention of the present application can be widely applied to an inspection device, a contact state determination device, and a contact state determination method for determining the contact state between a pair of probes and a pair of discrimination target parts.

[0119] Explanation of reference numerals

[0120] 1, 1A, 1B: Insulation resistance measurement device;

[0121] 2: Inspection voltage generation circuit;

[0122] 3: Voltage division circuit;

[0123] 4: Voltage-current detection circuit;

[0124] 5a, 5b: A / D converter;

[0125] 6, 6A, 6B: Processing unit;

[0126] 7, 7A, 7B: Storage unit;

[0127] 9: Discharge circuit;

[0128] C1: Internal capacitance;

[0129] C2: Wiring capacitance;

[0130] C3: Capacitance;

[0131] Cd: Capacitance;

[0132] D1: First data;

[0133] D2: Second data;

[0134] D3: Third data;

[0135] D4: Fourth data;

[0136] Dr1, Dr2, Dra: Discharge rate data;

[0137] Dt1, Dt2, Dta: Time data;

[0138] Dv1, Dv2, Dva: Voltage value data;

[0139] DUT: Secondary battery;

[0140] Lm: Metal layer;

[0141] P1, P2: Probes;

[0142] R1: Discharge resistor;

[0143] Rd: Insulation resistance;

[0144] SW: Switch;

[0145] Tp: Positive terminal;

[0146] Va: DC voltage for inspection.

Claims

1. An inspection device, the inspection device comprising: An inspection voltage generation unit that generates an inspection voltage; A pair of probes that supply the inspection voltage generated by the inspection voltage generation unit between the pair of determination target parts in a state of being in contact with the pair of determination target parts in an inspection object having a capacitance between the pair of determination target parts; A current measurement unit that measures a current value of a current flowing between the pair of determination target parts in a state of supplying the inspection voltage between the pair of determination target parts; And A processing unit that executes an inspection process and a determination process, the inspection process being a process of inspecting whether the inspection object is good based on the current value of the current flowing between the pair of determination target parts measured by the current measurement unit, and the determination process being a process of determining whether the contact state between the pair of probes in contact with the pair of determination target parts and the pair of determination target parts is good, wherein the inspection device comprises: A storage unit that stores a capacitance value of a capacitance between the pair of probes in a non-contact state with the pair of determination target parts and a threshold value that is a value equal to or less than the capacitance value of the capacitance between the pair of determination target parts; A discharge unit that executes a discharge process of discharging the charge accumulated in the capacitance between the pair of probes; And A capacitance measurement unit that measures a capacitance value of a capacitance between the pair of probes in a contact state with the pair of determination target parts, The processing unit executes the determination process after the inspection process, and in the discharge process, causes the capacitance measurement unit to measure the capacitance value of the capacitance between the pair of probes in a contact state with the pair of determination target parts based on the discharge time of the charge, and determines whether the contact state between the pair of probes and the pair of determination target parts is good based on whether the capacitance value obtained by subtracting the capacitance value of the capacitance between the pair of probes stored in the storage unit from the capacitance value measured by the capacitance measurement unit exceeds the threshold value stored in the storage unit.

2. An inspection device, the inspection device comprising: An inspection voltage generation unit that generates an inspection voltage; A pair of probes that supply the inspection voltage generated by the inspection voltage generation unit between the pair of determination target parts in a state of being in contact with the pair of determination target parts in an inspection object having a capacitance between the pair of determination target parts; A current measurement unit that measures a current value of a current flowing between the pair of determination target parts in a state of supplying the inspection voltage between the pair of determination target parts; And A processing unit that executes an inspection process and a determination process, the inspection process being a process of inspecting whether the inspection object is good based on the current value of the current flowing between the pair of determination target parts measured by the current measurement unit, and the determination process being a process of determining whether the contact state between the pair of probes in contact with the pair of determination target parts and the pair of determination target parts is good, wherein the inspection device comprises: A storage unit that stores a threshold value that is a value equal to or less than the capacitance value of the electrostatic capacitance between the pair of probes when the pair of probes are in a contact state with the pair of determination target parts; A discharge unit that performs a discharge process of discharging the charge of the electrostatic capacitance accumulated between the pair of probes; and An electrostatic capacitance measurement unit that measures the capacitance value of the electrostatic capacitance between the pair of probes when the pair of probes are in a contact state with the pair of determination target parts, After the inspection process, the processing unit performs the determination process. In the discharge process, the electrostatic capacitance measurement unit measures the capacitance value of the electrostatic capacitance between the pair of probes when the pair of probes are in a contact state with the pair of determination target parts based on the discharge time of the charge, and determines whether the contact state between the pair of probes and the pair of determination target parts is good based on whether the capacitance value measured by the electrostatic capacitance measurement unit exceeds the threshold value stored in the storage unit.

3. An inspection device, the inspection device comprising: An inspection voltage generation unit that generates an inspection voltage; A pair of probes that supply the inspection voltage generated by the inspection voltage generation unit between the pair of determination target parts in a state where the pair of probes are in contact with the pair of determination target parts in an inspection object having an electrostatic capacitance between the pair of determination target parts; A current measurement unit that measures the current value of the current flowing between the pair of determination target parts in a state where the inspection voltage is supplied between the pair of determination target parts; A processing unit that performs an inspection process and a determination process. The inspection process is a process of inspecting whether the inspection object is good based on the current value of the current flowing between the pair of determination target parts measured by the current measurement unit, and the determination process is a process of determining whether the contact state between the pair of probes in contact with the pair of determination target parts and the pair of determination target parts is good. Among them, the inspection device comprises: A discharge unit that performs a discharge process of discharging the charge of the electrostatic capacitance accumulated between the pair of probes; A voltage measurement unit that can measure the voltage between the pair of probes in the discharge process, and the discharge process is a process of discharging the charge of the electrostatic capacitance accumulated between the pair of probes in a state where the pair of probes are in contact with the pair of determination target parts; and A storage unit that stores a reference value, and determines whether the contact state of the pair of probes is good by comparing the reference value with a comparison value determined based on the voltage value of the voltage between the pair of probes measured by the voltage measurement unit, After the inspection process, the processing unit performs the determination process, determines the comparison value based on the voltage value of the voltage measured by the voltage measurement unit in the discharge process implemented by the discharge unit, and determines whether the contact state between the pair of probes and the pair of determination target parts is good by comparing the determined comparison value with the reference value stored in the storage unit.

4. The inspection device according to claim 3, wherein The storage unit stores the first time and the second time as the reference value. The first time is the discharge time when discharging the charge accumulated between the pair of probes in a non-contact state with the pair of determination target parts under the same discharge conditions as the discharge process. The second time is defined to be less than the discharge time when discharging the charge accumulated between the pair of determination target parts under the same discharge conditions as this discharge process. In the determination process, the processing unit determines the third time, which is the discharge time of the charge accumulated between the pair of probes in a contact state with the pair of determination target parts, as the comparison value based on the voltage value of the voltage measured by the voltage measurement unit, and determines whether the contact state between the pair of probes and the pair of determination target parts is good by comparing the fourth time obtained by subtracting the first time from the determined third time with the second time.

5. The inspection device according to claim 3, wherein The storage unit stores time A as the reference value. Time A is defined to be less than the discharge time when discharging the charge accumulated between the pair of probes in a contact state with the pair of determination target parts under the same discharge conditions as the discharge process. In the determination process, the processing unit determines time B, which is the discharge time of the charge accumulated between the pair of probes in a contact state with the pair of determination target parts, as the comparison value based on the voltage value of the voltage measured by the voltage measurement unit, and determines whether the contact state between the pair of probes and the pair of determination target parts is good by comparing the determined time B with time A.

6. The inspection device according to claim 3, wherein The storage unit stores the first decline rate and the second decline rate as the reference value. The first decline rate is the decline rate of the voltage between the pair of probes when discharging the charge accumulated between the pair of probes in a non-contact state with the pair of determination target parts under the same discharge conditions as the discharge process. The second decline rate is defined to be less than the decline rate of the voltage between the pair of determination target parts when discharging the charge accumulated between the pair of determination target parts under the same conditions as this discharge process. In the determination process, the processing unit determines the third decline rate, which is the decline rate of the voltage between the pair of probes in the discharge process of the charge accumulated between the pair of probes in a contact state with the pair of determination target parts, as the comparison value based on the voltage value of the voltage measured by the voltage measurement unit, and determines whether the contact state between the pair of probes and the pair of determination target parts is good by comparing the fourth decline rate obtained by subtracting the first decline rate from the determined third decline rate with the second decline rate.

7. The inspection device according to claim 3, wherein The storage unit stores the decay rate A as the reference value, where the decay rate A is defined as being equal to or greater than the decay rate of the voltage between the pair of probes when discharging the charge accumulated between the pair of probes in contact with the pair of determination target parts under the same discharge conditions as the discharge process. In the determination process, the processing unit determines the decay rate B, which is the decay rate of the voltage between the pair of probes in the discharge process of the charge accumulated between the pair of probes in contact with the pair of determination target parts, as the comparison value based on the voltage value of the voltage measured by the voltage measurement unit, and determines whether the contact state between the pair of probes and the pair of determination target parts is good by comparing the determined decay rate B with the decay rate A.

8. The inspection device according to claim 3, wherein The storage unit stores the first voltage value and the second voltage value as the reference value. The first voltage value is the voltage value of the voltage between the pair of probes at a time point after a predetermined time has elapsed since the start of discharge when discharging the charge accumulated between the pair of probes in a non-contact state with the pair of determination target parts under the same discharge conditions as the discharge process. The second voltage value is defined as being equal to or less than the voltage value of the voltage between the pair of determination target parts at a time point after the predetermined time has elapsed since the start of discharge when discharging the charge accumulated between the pair of determination target parts under the same discharge conditions as this discharge process. In the determination process, the processing unit determines the third voltage value, which is the voltage value of the voltage between the pair of probes at a time point after the predetermined time has elapsed since the start of the discharge process of the charge accumulated between the pair of probes in contact with the pair of determination target parts, as the comparison value based on the voltage value of the voltage measured by the voltage measurement unit, and determines whether the contact state between the pair of probes and the pair of determination target parts is good by comparing the fourth voltage value obtained by subtracting the first voltage value from the determined third voltage value with the second voltage value.

9. The inspection device according to claim 3, wherein The storage unit stores the voltage value A as the reference value, where the voltage value A is defined as being equal to or less than the voltage value of the voltage between the pair of probes at a time point after a predetermined time has elapsed since the start of discharge when discharging the charge accumulated between the pair of probes in contact with the pair of determination target parts under the same discharge conditions as the discharge process. In the determination process, the processing unit determines, based on the voltage value of the voltage measured by the voltage measurement unit, the voltage value B, which is the voltage value between the pair of probes at the time point when a predetermined time has elapsed since the start of the discharge process, where the charge accumulated between the pair of probes in contact with the pair of determination target parts is discharged, as the comparison value, and determines whether the contact state between the pair of probes and the pair of determination target parts is good by comparing the determined voltage value B with the voltage value A.

10. A contact state determination device, the contact state determination device includes a processing unit that executes a determination process for determining whether the contact state between a pair of probes in contact with a pair of determination target parts in an inspection object having a capacitance between the pair of determination target parts is good, the contact state determination device includes: a storage unit that stores a capacitance value of the capacitance between the pair of probes in a non-contact state with the pair of determination target parts and a threshold value that is a value equal to or less than the capacitance value of the capacitance between the pair of determination target parts; and a capacitance measurement unit that measures the capacitance value of the capacitance between the pair of probes in a contact state with the pair of determination target parts, In the determination process, the processing unit determines whether the contact state between the pair of probes and the pair of determination target parts is good based on whether the capacitance value obtained by subtracting the capacitance value of the capacitance between the pair of probes stored in the storage unit from the capacitance value measured by the capacitance measurement unit exceeds the threshold value stored in the storage unit.

11. A contact state determination device, the contact state determination device includes a processing unit that executes a determination process for determining whether the contact state between a pair of probes in contact with a pair of determination target parts in an inspection object having a capacitance between the pair of determination target parts is good, the contact state determination device includes: a storage unit that stores a threshold value that is a value equal to or less than the capacitance value of the capacitance between the pair of probes in a contact state with the pair of determination target parts; and a capacitance measurement unit that measures the capacitance value of the capacitance between the pair of probes in a contact state with the pair of determination target parts, In the determination process, the processing unit determines whether the contact state between the pair of probes and the pair of determination target parts is good based on whether the capacitance value measured by the capacitance measurement unit exceeds the threshold value stored in the storage unit.

12. A contact state determination device, the contact state determination device includes a processing unit that executes a determination process for determining whether the contact state between a pair of probes in contact with a pair of determination target parts in an inspection object having a capacitance between the pair of determination target parts is good, the contact state determination device includes: A voltage measurement unit that can measure the voltage between the pair of probes during the discharge process, where the discharge process is a process of discharging the charge of the electrostatic capacitance accumulated between the pair of probes in a contact state with the pair of determination target parts; and A storage unit that stores a reference value, and determines whether the contact state of the pair of probes is good by comparing the reference value with a comparison value determined based on the voltage value of the voltage between the pair of probes measured by the voltage measurement unit, In the determination process, the processing unit determines the comparison value based on the voltage value of the voltage measured by the voltage measurement unit during the discharge process, and determines whether the contact state between the pair of probes and the pair of determination target parts is good by comparing the determined comparison value with the reference value stored in the storage unit.

13. The contact state determination device according to claim 12, wherein The storage unit stores a first time and a second time as the reference value. The first time is the discharge time when discharging the charge between the pair of probes in a non-contact state with the pair of determination target parts under the same discharge conditions as the discharge process. The second time is defined to be less than or equal to the discharge time when discharging the charge accumulated between the pair of determination target parts under the same discharge conditions as the discharge process, In the determination process, the processing unit determines the third time, which is the discharge time of the charge accumulated between the pair of probes in a contact state with the pair of determination target parts, as the comparison value based on the voltage value of the voltage measured by the voltage measurement unit, and determines whether the contact state between the pair of probes and the pair of determination target parts is good by comparing the fourth time obtained by subtracting the first time from the determined third time with the second time.

14. The contact state determination device according to claim 12, wherein The storage unit stores a time A as the reference value, and the time A is defined to be less than or equal to the discharge time when discharging the charge accumulated between the pair of probes in a contact state with the pair of determination target parts under the same discharge conditions as the discharge process, In the determination process, the processing unit determines the time B, which is the discharge time of the charge accumulated between the pair of probes in a contact state with the pair of determination target parts, as the comparison value based on the voltage value of the voltage measured by the voltage measurement unit, and determines whether the contact state between the pair of probes and the pair of determination target parts is good by comparing the determined time B with the time A.

15. The contact state determination device according to claim 12, wherein The storage unit stores the first voltage drop rate and the second voltage drop rate as the reference values. The first voltage drop rate is the voltage drop rate between the pair of probes when discharging the charge accumulated between the pair of probes in a non-contact state with the pair of determination target parts under the same discharge conditions as the discharge process. The second voltage drop rate is defined to be equal to or less than the voltage drop rate between the pair of determination target parts when discharging the charge accumulated between the pair of determination target parts under the same discharge conditions as the discharge process. In the determination process, the processing unit determines the third voltage drop rate, which is the voltage drop rate between the pair of probes in the discharge process of the charge accumulated between the pair of probes in a contact state with the pair of determination target parts, as the comparison value based on the voltage value of the voltage measured by the voltage measurement unit, and determines whether the contact state between the pair of probes and the pair of determination target parts is good by comparing the fourth voltage drop rate obtained by subtracting the first voltage drop rate from the determined third voltage drop rate with the second voltage drop rate.

16. The contact state determination device according to claim 12, wherein The storage unit stores the voltage drop rate A as the reference value. The voltage drop rate A is defined to be equal to or greater than the voltage drop rate between the pair of probes when discharging the charge accumulated between the pair of probes in a contact state with the pair of determination target parts under the same discharge conditions as the discharge process. In the determination process, the processing unit determines the voltage drop rate B, which is the voltage drop rate between the pair of probes in the discharge process of the charge accumulated between the pair of probes in a contact state with the pair of determination target parts, as the comparison value based on the voltage value of the voltage measured by the voltage measurement unit, and determines whether the contact state between the pair of probes and the pair of determination target parts is good by comparing the determined voltage drop rate B with the voltage drop rate A.

17. The contact state determination device according to claim 12, wherein The storage unit stores the first voltage value and the second voltage value as the reference values. The first voltage value is the voltage value between the pair of probes at a time point after a predetermined time has elapsed since the start of discharge when discharging the charge accumulated between the pair of probes in a non-contact state with the pair of determination target parts under the same discharge conditions as the discharge process. The second voltage value is defined to be equal to or less than the voltage value between the pair of determination target parts at a time point after the predetermined time has elapsed since the start of discharge when discharging the charge accumulated between the pair of determination target parts under the same discharge conditions as the discharge process. In the determination process, the processing unit determines, based on the voltage value of the voltage measured by the voltage measurement unit, a third voltage value, which is the voltage value between the pair of probes at the time point when a predetermined time has elapsed since the start of the discharge process, as the charge accumulated between the pair of probes in a contact state with the pair of determination target parts, as the comparison value, and determines whether the contact state between the pair of probes and the pair of determination target parts is good by comparing a fourth voltage value obtained by subtracting the first voltage value from the determined third voltage value with the second voltage value.

18. The contact state determination device according to claim 12, wherein the storage unit stores a voltage value A as the reference value, and the voltage value A is defined as being less than or equal to the voltage value between the pair of probes at the time point when a predetermined time has elapsed since the start of the discharge when discharging the charge accumulated between the pair of probes in a contact state with the pair of determination target parts under the same discharge conditions as the discharge process. In the determination process, the processing unit determines, based on the voltage value of the voltage measured by the voltage measurement unit, a voltage value B, which is the voltage value between the pair of probes at the time point when a predetermined time has elapsed since the start of the discharge process, as the charge accumulated between the pair of probes in a contact state with the pair of determination target parts, as the comparison value, and determines whether the contact state between the pair of probes and the pair of determination target parts is good by comparing the determined voltage value B with the voltage value A.

19. A contact state determination method, which performs a determination process for determining whether the contact state between a pair of probes in contact with a pair of determination target parts in an inspection object having an electrostatic capacitance between the pair of determination target parts is good, wherein in the determination process, the capacitance value of the electrostatic capacitance between the pair of probes in a contact state with the pair of determination target parts is measured, and based on whether the capacitance value obtained by subtracting the capacitance value of the electrostatic capacitance between the pair of probes in a non-contact state with the pair of determination target parts from the measured capacitance value exceeds a threshold value defined as being less than or equal to the capacitance value of the electrostatic capacitance between the pair of determination target parts, it is determined whether the contact state between the pair of probes and the pair of determination target parts is good.

20. A contact state determination method, which performs a determination process for determining whether the contact state between a pair of probes in contact with a pair of determination target parts in an inspection object having an electrostatic capacitance between the pair of determination target parts is good, wherein In the discrimination process, the capacitance value of the electrostatic capacitance between the pair of probes in a contact state with the pair of discrimination target parts is measured, and based on whether the measured capacitance value exceeds a threshold value that is a value equal to or less than the capacitance value of the electrostatic capacitance between the pair of probes in a contact state with the pair of discrimination target parts, it is discriminated whether the contact state between the pair of probes and the pair of discrimination target parts is good.

21. A contact state discrimination method, the contact state discrimination method performing a discrimination process for discriminating whether the contact state between a pair of probes that come into contact with a pair of discrimination target parts in an inspection object having an electrostatic capacitance between the pair of discrimination target parts is good, wherein, in the discrimination process, the voltage between the pair of probes in a discharge process for discharging the charge of the electrostatic capacitance between the pair of probes in a contact state with the pair of discrimination target parts is measured, a comparison value is determined based on the measured voltage value, and by comparing the reference value with the determined comparison value, it is discriminated whether the contact state between the pair of probes and the pair of discrimination target parts is good, wherein the reference value is a value for discriminating whether the contact state of the pair of probes is good by comparing with the comparison value.

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