Ink and preparation method thereof, film and preparation method thereof, and photoelectric device

Abstract

The invention discloses ink and a preparation method thereof, a film and a preparation method thereof, and a photoelectric device. The composite material comprises inorganic nanoparticles, a microporous polymer and a solvent, and the inorganic nanoparticles are distributed in the microporous polymer; and / or the inorganic nanoparticles are distributed in the pore channels of the microporous polymer; and / or the inorganic nanoparticles are distributed on the surface of the microporous polymer. In the ink provided by the invention, the microporous polymer has a relatively high specific surface area, so that the dispersity of the inorganic nanoparticles can be effectively improved.

Description

Technical Field

[0001] This application relates to the field of display technologies, and particularly to an ink and a preparation method thereof, a film and a preparation method thereof, and an optoelectronic device. Background Art

[0002] Inorganic semiconductor particles have excellent optoelectronic properties, such as high mobility, strong photoconductive properties, adjustable energy gap according to particle size, strong material absorption, etc., and are often used in functional films.

[0003] When preparing a film including inorganic semiconductor particles, inorganic nanoparticles are usually dispersed in a solvent to obtain an ink first, and then the film is prepared by a solution method.

[0004] However, in the existing ink, the inorganic nanoparticles are prone to agglomeration, resulting in poor dispersion effect, and further resulting in poor film-forming effect. Summary of the Invention

[0005] In view of this, this application provides an ink, aiming to improve the problem that inorganic nanoparticles in the existing ink are prone to agglomeration.

[0006] An embodiment of this application is implemented as follows. A composite material includes inorganic nanoparticles, a microporous polymer, and a solvent, wherein,

[0007] the inorganic nanoparticles are distributed inside the microporous polymer; and / or

[0008] the inorganic nanoparticles are distributed in the pores of the microporous polymer; and / or

[0009] the inorganic nanoparticles are distributed on the surface of the microporous polymer.

[0010] Optionally, in some embodiments, in the composite material, the mass ratio of the microporous polymer to the inorganic nanoparticles is 1:(1-2); and / or

[0011] the concentration range of the ink is 10-60 mg / ml.

[0012] Optionally, in some embodiments, the microporous polymer includes one or more of an amorphous microporous polymer and a crystalline microporous polymer, wherein,

[0013] the amorphous microporous polymer includes one or more of a hypercrosslinked microporous polymer, a conjugated microporous polymer, a self-inherent microporous polymer, a porous aromatic framework, and a porous organic cage; and / or

[0014] the crystalline microporous polymer includes a covalent organic framework.

[0015] Optionally, in some embodiments, the hypercrosslinked microporous polymer includes a naphthyl hypercrosslinked microporous polymer, wherein the naphthyl hypercrosslinked microporous polymer is formed by crosslinking monomers represented by formula (I):

[0016]

[0017] Wherein,

[0018] L1, L2, L3, L4, L5, L6, L7, L8 are each independently selected from a single bond, unsubstituted or substituted -(CH2) n1 -, -(CH2) n2 CH=CH(CH2) n3 -, -(CH2) n4 C≡C(CH2) n5 -, -(CH2) n6 O(CH2) n7 -, -(CH2) n8 (OCH2) n9 -, -(CH2) n10 CO(CH2) n11 -, -(CH2) n12 NHCO(CH2) n13 -, -(CH2) n14 CONH(CH2) n15 -, -(CH2) n16 OCO(CH2) n17 - and -(CH2) n18 COO(CH2) n19 - or a combination of two or more thereof, wherein n1 to n19 are each independently selected from integers from 1 to 20, and the substituents of the substituted ones include halogen, hydroxyl, nitro, cyano, isocyano, silyl, C1-C 20 alkyl, C1-C 20 alkoxy, C1-C 20 alkylthio, aryl with 6 to 60 ring atoms, aryloxy with 6 to 60 ring atoms, arylthio with 6 to 60 ring atoms;

[0019] * is a connection site, and the crosslinked monomers are crosslinked through at least one connection site to form a naphthyl hypercrosslinked microporous polymer.

[0020] Optionally, in some embodiments, L1, L2, L3, L4, L5, L6, L7, L8 are each independently selected from a single bond, unsubstituted or substituted -(CH2) n1 -, -(CH2) n2 CH=CH(CH2) n3 -, -(CH2) n4C≡C(CH2) n5 One or more combinations of the following, where n1 to n5 are each independently selected from integers from 1 to 10, and the substituents for substitution include halogen, hydroxyl, nitro, cyano, isocyano, silyl, C1-C 10 alkyl, C1-C 10 alkoxy, C1-C 10 alkylthio, aryl with 6 to 30 ring atoms, aryloxy with 6 to 30 ring atoms, arylthio with 6 to 30 ring atoms, one or more of these.

[0021] Optionally, in some embodiments, L1, L2, L3, L4, L5, L6, L7, L8 are each independently selected from a single bond, unsubstituted or substituted -(CH2) n1 -, where n1 is selected from integers from 1 to 10, and the substituents for substitution include halogen, hydroxyl, C1-C 10 alkyl, one or more of these.

[0022] Optionally, in some embodiments, the naphthyl-based hypercrosslinked microporous polymer has the structure shown in formula (II):

[0023]

[0024] Optionally, in some embodiments, the inorganic nanoparticles include N-type inorganic semiconductor particles, and the N-type inorganic semiconductor particles include one or more of first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The materials of the first undoped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5. The metal oxides in the first doped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, Al2O3. The doping elements in the first doped metal oxide particles include one or several of All, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga. The IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, CdS. The IIIA-VA group semiconductor materials include one or more of InP, GaP. The IB-IIIA-VIA group semiconductor materials include one or more of CuInS, CuGaS; and / or

[0025] The inorganic nanoparticles include P-type inorganic semiconductor particles, and the P-type inorganic semiconductor particles include one or more of second-doped metal oxide particles, second-undoped metal oxide particles, metal sulfides, and metal nitrides. Among them, the metal oxides in the second-doped metal oxide particles and the metal oxides in the second-undoped metal oxide particles independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, and V2O5. The doping elements in the second-doped metal oxide particles include one or more of Mo, W, Ni, Cr, Cu, and V. The metal sulfides include one or more of CuS, MoS3, and WS3. The metal nitrides include P-type gallium nitride.

[0026] Optionally, in some embodiments, the solvent includes one or more of a first solvent and a second solvent, wherein the boiling point of the first solvent is greater than that of the second solvent.

[0027] Optionally, in some embodiments, the boiling point of the first solvent is greater than or equal to 150 °C. Preferably, the first solvent includes polyols, and the polyols include one or more of ethylene glycol, diethylene glycol, dipropylene glycol, and glycerol; and / or

[0028] The boiling point of the second solvent is less than 150 °C. Preferably, the second solvent includes monohydric alcohols. Further, the monohydric alcohols include one or more of methanol, ethanol, isopropanol, and n-butanol; and / or

[0029] The volume ratio of the first solvent to the second solvent is 2:3 to 1:1.

[0030] Optionally, in some embodiments, the ink further includes a photoinitiator and a crosslinking agent.

[0031] Optionally, in some embodiments, the photoinitiator includes one or more of benzoin and derivative photoinitiators, benzil photoinitiators, alkyl phenone photoinitiators, acylphosphine oxide photoinitiators, benzophenone photoinitiators, thioxanthone photoinitiators, and organic salt photoinitiators, wherein the benzoin and derivative photoinitiators include one or more of benzoin, benzoin dimethyl ether, benzoin ethyl ether, benzoin isopropyl ether, and benzoin butyl ether, the benzil photoinitiator includes one or more of diphenyl acetophenone and α,α-dimethoxy-α-phenylacetophenone, and the alkyl phenone photoinitiator includes one or more of benzoin dimethyl ether, benzoin ethyl ether, benzoin isopropyl ether, and benzoin butyl ether. Including one or more of α,α-diethoxyacetophenone, α-hydroxyalkyl phenone, α-aminoalkyl phenone, the acyl phosphorus oxide photoinitiator includes one or more of aromatic acyl phosphine oxide and bisbenzoylphenyl phosphine oxide, the benzophenone photoinitiator includes one or more of benzophenone, 2,4-dihydroxybenzophenone, and Michler's ketone, the thioxanthone photoinitiator includes one or more of thiopropoxythioxanthone and isopropylthioxanthone, and the organic salt photoinitiator includes one or more of diaryl iodonium salt, triaryl iodonium salt, alkyl iodonium salt, and isopropyl ferrocenium hexafluorophosphate; and / or

[0032] The cross-linking agent includes a thiol compound, and the thiol compound includes one or more of dimercaptoethanol, dimercaptopropanol, mercaptoethanol, thioglycolic acid, thiophenol, and cysteine; and / or

[0033] The molar ratio of the photoinitiator to the inorganic nanoparticles is (0.001-0.01):1; and / or

[0034] The mass of the cross-linking agent is 40% to 60% of the mass of the inorganic nanoparticles.

[0035] Accordingly, the present invention also provides a method for preparing ink, comprising the following steps:

[0036] Providing an inorganic nanoparticle dispersion, wherein the inorganic nanoparticle dispersion comprises inorganic nanoparticles and a solvent;

[0037] A microporous polymer is added to the inorganic nanoparticle dispersion to react and obtain ink.

[0038] Optionally, in some embodiments, the mass ratio of the microporous polymer to the inorganic nanoparticles is 1:(1-2); and / or

[0039] The reaction temperature is 10-13°C; and / or

[0040] The inorganic nanoparticle dispersion also includes a photoinitiator and a crosslinking agent.

[0041] Correspondingly, an embodiment of the present application further provides a method for preparing a thin film, including the following steps:

[0042] Provide the above-mentioned ink, and dispose the ink on a substrate to obtain a wet film;

[0043] Perform photocuring and drying on the wet film to obtain a thin film.

[0044] Optionally, in some embodiments, the photocuring includes: irradiating the wet film with ultraviolet light, where the wavelength of the ultraviolet light irradiation is 270-380 nm and the time is 3-10 min.

[0045] Correspondingly, an embodiment of the present application further provides a thin film, which is prepared by the above method for preparing a thin film.

[0046] Correspondingly, an embodiment of the present application further provides an optoelectronic device, including an anode and a cathode disposed opposite to each other, and further including a first carrier functional layer disposed between the anode and the cathode, where the first carrier functional layer is the above thin film.

[0047] Optionally, in some embodiments, the optoelectronic device further includes a second carrier functional layer, where the first carrier functional layer is the above thin film, and

[0048] The inorganic nanoparticles in the first carrier functional layer are P-type inorganic semiconductor particles, and the inorganic nanoparticles in the second carrier functional layer are N-type inorganic semiconductor particles; or

[0049] The inorganic nanoparticles in the first carrier functional layer are N-type inorganic semiconductor particles, and the inorganic nanoparticles in the second carrier functional layer are P-type inorganic semiconductor particles.

[0050] Optionally, in some embodiments, the anode and the cathode independently include a doped metal oxide electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a metal elemental electrode, or an alloy electrode. The material of the doped metal oxide electrode includes one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, aluminum-doped magnesium oxide, and cadmium-doped zinc oxide. The composite electrode includes AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al, or BaF2 / Ca / Al. The material of the metal elemental electrode includes one or more of Ag, Ni, Pt, Au, Ir, Cu, Mo, Al, Ca, Mg, and Ba. The alloy electrode includes an Au:Mg alloy electrode or an Ag:Mg alloy electrode; and / or

[0051] The optoelectronic device further includes a light-emitting layer, which is located between the anode and the first carrier functional layer or between the cathode and the first carrier functional layer. The material of the light-emitting layer includes one or more of an organic light-emitting material and a quantum dot light-emitting material. The organic light-emitting material includes one or more of 4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridineiridium(III)], 4,4',4''-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridineiridium, diarylanthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent material, TTPX fluorescent material, TBRb fluorescent material, DBP fluorescent material, delayed fluorescence material, TTA material, thermally activated delayed material, polymer containing B-N covalent bond, hybrid local charge transfer excited state material, exciplex luminescent material, polyacetylene and its derivatives, poly(phenylene) and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives;The quantum dot light-emitting material includes one or more of single-structure quantum dots, core-shell structure quantum dots, and perovskite semiconductor materials. The materials of the single-structure quantum dots, the core materials of the core-shell structure quantum dots, and the shell materials of the core-shell structure quantum dots are each independently selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. The II-VI group compounds include one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds include one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compounds include one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The I-III-VI group compounds include one or more of CuInS2, CuInSe2, and AgInS2. The perovskite semiconductor material includes doped or undoped inorganic perovskite semiconductors or organic-inorganic hybrid perovskite semiconductors. The structural general formula of the inorganic perovskite semiconductor is AMX3, where A is Cs; + ions, M is a divalent metal cation, including Pb 2+ , Sn 2+ , Cu 2+ , Ni2+ 、Cd 2+ 、Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - 、Br - 、I - One or more of; The structural general formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, where B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ 、Sn 2+ 、Cu 2+ 、Ni 2 + 、Cd 2+ 、Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - 、Br - 、I - One or more of

[0052] In the ink of the present application, the inorganic nanoparticles are distributed inside, and / or in the pores, and / or on the surface of the microporous polymer. The microporous polymer has a high specific surface area, which can improve the dispersion of the inorganic nanoparticles, thereby improving the brightness and lifespan of the light-emitting device. Description of the Drawings

[0053] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present application. For those skilled in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0054] Figure 1 It is a flowchart of a method for preparing an ink provided by an embodiment of the present application;

[0055] Figure 2It is a flowchart of a method for preparing a thin film provided by an embodiment of the present application;

[0056] Figure 3 It is a schematic structural diagram of an optoelectronic device provided by an embodiment of the present application;

[0057] Figure 4 It is a schematic structural diagram of another optoelectronic device provided by an embodiment of the present application;

[0058] Figure 5 It is a schematic structural diagram of another optoelectronic device provided by an embodiment of the present application;

[0059] Figure 6 It is a micrograph of the thin film of Example 1 of the thin film of the present application;

[0060] Figure 7 It is a micrograph of the thin film of Example 2 of the thin film of the present application;

[0061] Figure 8 It is a micrograph of the thin film of Example 3 of the thin film of the present application;

[0062] Figure 9 It is a micrograph of the thin film of Comparative Example 1 of the thin film of the present application.

[0063] Reference numerals:

[0064] Optoelectronic device 100; Anode 10; Cathode 20; First carrier functional layer 30; Second carrier functional layer 40; Light-emitting layer 50. Detailed implementation manners

[0065] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts belong to the scope of protection of the present application. In addition, it should be understood that the specific implementation manners described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0066] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the technical field to which this invention belongs. The terms used in the specification of this invention herein are only for the purpose of describing specific embodiments, and are not intended to limit the invention. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.

[0067] In this application, unless otherwise specified, the orientation terms such as "upper" and "lower" generally refer to the upper and lower directions in the actual use or working state of the device, specifically the drawing directions in the attached drawings; while "inner" and "outer" refer to the outline of the device. Additionally, in the description of this application, the term "comprising" means "including but not limited to". The terms first, second, third, etc. are only used as labels and do not impose numerical requirements or establish an order.

[0068] In this application, "and / or" describes the association relationship of associated objects and indicates that three relationships can exist. For example, A and / or B can represent: A exists alone, A and B exist simultaneously, or B exists alone. Here, A and B can be singular or plural.

[0069] In this application, "at least one" means one or more, and "a plurality" means two or more. "One or more kinds", "at least one of the following (items)" or similar expressions refer to any combination of these items, including any combination of single items or plural items. For example, "at least one of a, b, or c", or "at least one of a, b, and c" can both represent: a, b, c, a - b (i.e., a and b), a - c, b - c, or a - b - c, where a, b, and c can be single or multiple respectively.

[0070] In this application, when forming another layer "on" a certain layer, the so-called "on" is a broad concept, which can mean that the formed another layer is adjacent to a certain layer, or there may be other spacer structure layers between another layer and a certain layer. For example, when forming a second electrode "on" the first carrier functional layer, the so-called "on" can mean that the formed second electrode is adjacent to the first carrier functional layer, or there may be other spacer structure layers between the second electrode and the first carrier functional layer, such as a light-emitting layer.

[0071] The various embodiments of this application can exist in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity and should not be construed as a rigid limitation on the scope of this application; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single values within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and single numbers within that range, such as 1, 2, 3, 4, 5, and 6, and this applies regardless of the range. Additionally, whenever a numerical range is indicated herein, it means including any cited number (fraction or integer) within the indicated range.

[0072] The solution-based film formation method is widely used in the preparation of thin films due to its advantages such as low cost, high flexibility, and good film formation effect. Usually, the film-forming material is dissolved / dispersed in a solvent to form an ink, and then the thin film is prepared using the ink. However, in the existing ink, the film-forming material is prone to aggregation, resulting in black spots in the prepared thin film, which in turn affects the physical and chemical properties of the thin film; in addition, the solvent in the existing ink volatilizes relatively fast, resulting in a large number of pores in the prepared thin film, which in turn affects the physical and chemical properties of the thin film.

[0073] The technical solution of this application is as follows:

[0074] In a first aspect, an embodiment of this application provides a composite material, which includes inorganic nanoparticles and a microporous polymer, wherein the inorganic nanoparticles are distributed inside the microporous polymer; and / or, the inorganic nanoparticles are distributed in the pores of the microporous polymer; and / or, the inorganic nanoparticles are distributed on the surface of the microporous polymer.

[0075] A microporous polymer is a polymer material with a microporous structure, including one or more of amorphous microporous polymers and crystalline microporous polymers.

[0076] The amorphous microporous polymer includes, but is not limited to, one or more of hypercrosslinked polymers (HCPs), conjugated microporous polymers (CMPs), intrinsically microporous polymers (also known as covalent triazine frameworks or PIMs), porous aromatic frameworks (PAFs), and porous organic cages (POCs).

[0077] The crystalline microporous polymer includes, but is not limited to, covalent organic frameworks (COFs).

[0078] Among them, hypercrosslinked polymers (HCPs) are three-dimensional network porous organic polymers with permanent porosity synthesized by Friedel-Crafts alkylation reaction. Conjugated microporous polymers (CMPs) are a kind of material composed of conjugated polymers and microporous materials, which are macromolecules with conjugated structures and have good electrical conductivity and electron transport ability. Intrinsically microporous polymers (PIMs) are a class of organic porous materials with intrinsic microporous structures. Porous aromatic frameworks (PAFs) are porous solid materials with a rigid framework structure and a very high surface area, and have a unique aromatic structural unit connected by carbon-carbon bonds. Porous organic cages (POCs) are discrete molecules with internal cavities and can form pores in molecular crystals, amorphous solids, and porous liquids. Covalent organic frameworks (COFs) are a class of organic porous materials formed by the orderly connection of organic small molecule monomers through covalent bonds.

[0079] In the composite material described in this application, the inorganic nanoparticles are loaded in the pores of the microporous polymer. Thus, on the one hand, when using the composite material to prepare ink, the steric hindrance between the inorganic nanoparticles can be effectively increased, thereby effectively avoiding the aggregation of the inorganic nanoparticles, and further effectively improving the film-forming effect of the ink and reducing or even avoiding the generation of black spots in the prepared film. On the other hand, the crosslinking effect of the porous polymer is good. Thus, the evaporation rate of the solvent in the ink including the composite material during the film preparation process can be effectively slowed down, thereby effectively reducing or even avoiding the generation of holes in the prepared film. On the further hand, the microporous polymer has high thermal stability, which can effectively improve the stability of the composite material, and further improve the stability of the film prepared from the composite material. On yet another hand, the microporous polymer has a high specific surface area, which can effectively enhance the activity and dispersibility of the inorganic nanoparticles, thereby effectively improving the dispersion performance of the composite material in the ink, and further effectively improving the charge transport and other properties of the film prepared from the composite material.

[0080] In some embodiments, in the composite material, the mass ratio of the microporous polymer to the inorganic nanoparticles is 1:(1 - 2). Within this mass ratio range, the composite material can have high stability, the inorganic nanoparticles can have good dispersibility in the solvent, and the evaporation rate of the solvent in the ink can be effectively reduced. The film prepared from the composite material can have fewer or even no black spots and holes.

[0081] In some embodiments, the hypercrosslinked microporous polymer includes, but is not limited to, naphthalene-based hypercrosslinked microporous polymer.

[0082] The naphthalene-based hypercrosslinked microporous polymer is formed by crosslinking monomers represented by formula (I):

[0083]

[0084] Among them,

[0085] L1, L2, L3, L4, L5, L6, L7, L8 are each independently selected from a single bond, unsubstituted or substituted -(CH2) n1 -, -(CH2) n2 CH=CH(CH2) n3 -, -(CH2) n4 C≡C(CH2) n5 -, -(CH2) n6 O(CH2) n7 -, -(CH2) n8 (OCH2) n9 -, -(CH2)n10 CO(CH2) n11 -, -(CH2) n12 NHCO(CH2) n13 -, -(CH2) n14 CONH(CH2) n15 -, -(CH2) n16 OCO(CH2) n17 - and -(CH2) n18 COO(CH2) n19 - or a combination of two or more thereof, wherein n1 to n19 are each independently selected from integers of 1 to 20, and the substituents being substituted include halogen, hydroxyl, nitro, cyano, isocyano, silyl, C1-C 20 alkyl, C1-C 20 alkoxy, C1-C 20 alkylthio, aryl having 6 to 60 ring atoms, aryloxy having 6 to 60 ring atoms, arylthio having 6 to 60 ring atoms, one or more of them;

[0086] * is a connection site, and the crosslinking monomers are crosslinked through at least one connection site to form a naphthyl hypercrosslinked microporous polymer.

[0087] In some embodiments, L1, L2, L3, L4, L5, L6, L7, L8 are each independently selected from a single bond, unsubstituted or substituted -(CH2) n1 -, -(CH2) n2 CH=CH(CH2) n3 -, -(CH2) n4 C≡C(CH2) n5 - or a combination of two or more thereof, wherein n1 to n5 are each independently selected from integers of 1 to 10, and the substituents being substituted include halogen, hydroxyl, nitro, cyano, isocyano, silyl, C1-C 10 alkyl, C1-C 10 alkoxy, C1-C 10 alkylthio, aryl having 6 to 30 ring atoms, aryloxy having 6 to 30 ring atoms, arylthio having 6 to 30 ring atoms, one or more of them.

[0088] In some embodiments, L1, L2, L3, L4, L5, L6, L7, L8 are each independently selected from a single bond, unsubstituted or substituted -(CH2) n1 -, wherein n1 is selected from integers of 1 to 10, and the substituents being substituted include halogen, hydroxyl, C1-C 10 alkyl, one or more of them.

[0089] In at least one specific embodiment, the naphthyl-based hypercrosslinked microporous polymer has the structure shown in formula (II):

[0090]

[0091] In some embodiments, the naphthyl-based hypercrosslinked microporous polymer is prepared by a hypercrosslinking reaction of substituted or unsubstituted naphthalene with acetal.

[0092] In some embodiments, the substituents in the substituted naphthalene can be selected from, but not limited to, halogen, hydroxyl, carboxyl, nitro, sulfonic acid group, aldehyde group, mercapto group, cyano group, C1-C 20 alkyl, C1-C 20 alkoxy of one or more.

[0093] Furthermore, in some embodiments, the substituents in the substituted naphthalene can be selected from, but not limited to, halogen, hydroxyl, carboxyl, nitro, sulfonic acid group, aldehyde group, mercapto group, cyano group, C1-C 10 alkyl, C1-C 10 alkoxy of one or more.

[0094] By way of example, the alkyl includes one of methyl, ethyl, propyl, isopropyl, isobutyl, sec-butyl, tert-butyl, pentyl, isopentyl, neopentyl, cyclopentyl, hexyl, cyclohexyl, isohexyl.

[0095] The structural formula of the acetal is RCH(OR’)2.

[0096] Wherein, R can be selected from, but not limited to, hydrogen, deuterium, amino group, halogen, hydroxyl, carboxyl, nitro, sulfonic acid group, aldehyde group, mercapto group, cyano group, unsubstituted or substituted by halogen, hydroxyl, carboxyl, nitro, sulfonic acid group, aldehyde group, mercapto group, cyano group, C1-C 10 alkyl, C1-C 10 alkoxy of one or more substituted C1-C 30 alkyl, C3-C 30 cycloalkyl, C1-C 20 alkoxy, aryl with 5 to 60 ring atoms, heteroaryl with 5 to 60 ring atoms, aryloxy with 5 to 60 ring atoms, heteroaryloxy with 5 to 60 ring atoms, or a combination of one or more of them;

[0097] R’ can be selected from, but not limited to, unsubstituted or substituted by halogen, hydroxyl, carboxyl, nitro, sulfonic acid group, aldehyde group, mercapto group, cyano group, C1-C 10 alkyl, C1-C 10 alkoxy of one or more substituted C1-C 30 alkyl, C3-C 30 cycloalkyl, C1-C20 a combination of one or more of an alkoxy group, an aryl group having 5 to 60 ring atoms, a heteroaryl group having 5 to 60 ring atoms, an aryloxy group having 5 to 60 ring atoms, and a heteroaryloxy group having 5 to 60 ring atoms.

[0098] In some embodiments, R may be selected from, but not limited to, hydrogen, deuterium, C1-C 20 alkyl, C3-C 20 cycloalkyl, C1-C 10 a combination of one or more of an alkoxy group, an aryl group having 5 to 30 ring atoms, a heteroaryl group having 5 to 30 ring atoms, an aryloxy group having 5 to 30 ring atoms, and a heteroaryloxy group having 5 to 30 ring atoms.

[0099] Further, in some embodiments, R may be selected from, but not limited to, hydrogen, deuterium, C1-C 10 alkyl, C3-C 10 a combination of one or more of a cycloalkyl group, an aryl group having 5 to 15 ring atoms, a heteroaryl group having 5 to 15 ring atoms, an aryloxy group having 5 to 15 ring atoms, and a heteroaryloxy group having 5 to 15 ring atoms.

[0100] Further, in some embodiments, R may be selected from, but not limited to, hydrogen, deuterium, C1-C 10 alkyl, C3-C 10 a combination of one or more of a cycloalkyl group.

[0101] In some embodiments, R' may be selected from, but not limited to, an unsubstituted or halogen-, hydroxy-, carboxy-, nitro-, sulfo-, aldehyde-, mercapto-, cyano-, C1-C 10 alkyl, C1-C 10 alkoxy-substituted C1-C 20 alkyl, C3-C 20 cycloalkyl, C1-C 10 a combination of one or more of an alkoxy group, an aryl group having 5 to 30 ring atoms, a heteroaryl group having 5 to 30 ring atoms, an aryloxy group having 5 to 30 ring atoms, and a heteroaryloxy group having 5 to 30 ring atoms.

[0102] In some embodiments, R' may be selected from, but not limited to, an unsubstituted or halogen-, hydroxy-, carboxy-, nitro-, sulfo-, aldehyde-, mercapto-, cyano-, C1-C 10 alkyl, C1-C 10 alkoxy-substituted C1-C 10 alkyl, C3-C 10 a combination of one or more of a cycloalkyl group.

[0103] In at least one embodiment, the acetal may be selected from, but not limited to, one or more of formaldehyde dimethyl acetal and formaldehyde diethyl acetal.

[0104] The inorganic nanoparticles may be N-type inorganic semiconductor particles or P-type inorganic semiconductor particles.

[0105] The N-type inorganic semiconductor particles include, but are not limited to, one or more of first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The materials of the first undoped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxides in the first doped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping elements in the first doped metal oxide particles include one or several of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, and CdS. The IIIA-VA group semiconductor materials include one or more of InP and GaP. The IB-IIIA-VIA group semiconductor materials include one or more of CuInS and CuGaS.

[0106] The P-type inorganic semiconductor particles include, but are not limited to, one or more of second doped metal oxide particles, second undoped metal oxide particles, metal sulfides, and metal nitrides. Among them, the metal oxides in the second doped metal oxide particles and the metal oxides in the second undoped metal oxide particles independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, and V2O5. The doping elements in the second doped metal oxide particles include one or more of Mo, W, Ni, Cr, Cu, and V. The metal sulfides include one or more of CuS, MoS3, and WS3. The metal nitrides include P-type gallium nitride.

[0107] It can be understood that when the inorganic nanoparticles are the N-type inorganic semiconductor particles, the composite material can be an electronic functional material, such as an electron transport material for an electron transport layer or an electron injection material for an electron injection layer.

[0108] It can be understood that when the inorganic nanoparticles are the P-type inorganic semiconductor particles, the composite material can be a hole functional material, such as a hole transport material for a hole transport layer or a hole injection material for a hole injection layer.

[0109] In a second aspect, embodiments of the present application further provide an ink, which includes the composite material and a solvent described above.

[0110] The solvent includes one or more of a first solvent and a second solvent.

[0111] In some embodiments, the solvent includes the first solvent, and the boiling point of the first solvent is greater than or equal to 150 °C. The first solvent with such a boiling point volatilizes slowly and has a good film-forming effect.

[0112] In some other embodiments, the solvent further includes the second solvent. In other words, the solvent in the ink is a mixed solvent including the first solvent and the second solvent. The boiling point of the second solvent is lower than that of the first solvent. Relatively speaking, the first solvent is a solvent that is difficult to volatilize, and the second solvent is a solvent that is easy to volatilize. The volatilization rate of the first solvent is slower than that of the second solvent, and the second solvent can effectively improve the solubility of the composite material in the solvent. In this way, the composite material can be fully dissolved, and it is also beneficial to have a good film-forming effect when using the ink to form a film.

[0113] In some embodiments, the first solvent includes, but is not limited to, polyhydric alcohols. Further, the polyhydric alcohols include, but are not limited to, one or more of ethylene glycol, diethylene glycol, dipropylene glycol, and glycerol.

[0114] In some embodiments, the boiling point of the second solvent is less than 150 °C.

[0115] In some embodiments, the second solvent includes, but is not limited to, monohydric alcohols. Further, the monohydric alcohols include, but are not limited to, one or more of methanol, ethanol, isopropanol, and n-butanol.

[0116] In some embodiments, the volume ratio of the first solvent to the second solvent is 2:3 to 1:1. Within this volume ratio range, the composite material can be effectively dissolved, and it is also beneficial to have a good film-forming effect when using the ink to form a film.

[0117] In some embodiments, the concentration range of the ink is 10 to 60 mg / ml. Within this concentration range, it is beneficial to prepare a film with a good film-forming effect.

[0118] In some embodiments, the ink further includes a photoinitiator and a crosslinking agent.

[0119] The photoinitiator includes, but is not limited to, one or more of benzoin and its derivative photoinitiators, benzil photoinitiators, alkyl phenyl ketone photoinitiators, acylphosphine oxide photoinitiators, benzophenone photoinitiators, thioxanthone photoinitiators, and organic salt photoinitiators. Among them, the benzoin and its derivative photoinitiators include, but are not limited to, one or more of benzoin, benzoin dimethyl ether, benzoin ethyl ether, benzoin isopropyl ether, and benzoin butyl ether. The benzil photoinitiators include, but are not limited to, one or more of acetophenone and α,α-dimethoxy-α-phenylacetophenone. The alkyl phenyl ketone photoinitiators include, but are not limited to, one or more of α,α-diethoxyacetophenone, α-hydroxyalkyl phenyl ketone, and α-aminoalkyl phenyl ketone. The acylphosphine oxide photoinitiators include, but are not limited to, one or more of aromatic acylphosphine oxides and bis(benzoyl)phenylphosphine oxide. The benzophenone photoinitiators include, but are not limited to, one or more of benzophenone, 2,4-dihydroxybenzophenone, and Michler's ketone. The thioxanthone photoinitiators include, but are not limited to, one or more of 2-propylthioxanthone and isopropylthioxanthone. The organic salt photoinitiators include, but are not limited to, one or more of diaryliodonium salts, triaryliodonium salts, alkyl iodonium salts, and cumene ferrocenium hexafluorophosphate.

[0120] The crosslinking agent includes, but is not limited to, thiol compounds. The thiol compounds include, but are not limited to, one or more of 2-mercaptoethanol, 2,3-dimercaptopropanol, mercaptoethanol, thioglycolic acid, benzenethiol, and cysteine.

[0121] In the ink, the molar ratio of the photoinitiator to the inorganic nanoparticles is (0.001 - 0.01):1. Within this range, the crosslinking reaction can be effectively initiated, and the prepared film layer can have good conductivity and carrier transport performance.

[0122] In the ink, the mass of the crosslinking agent is 40% - 60% of the mass of the inorganic nanoparticles. Within this range, it is beneficial to the progress of the crosslinking reaction.

[0123] The ink described in this application includes the composite material described above. In the composite material, the inorganic nanoparticles are loaded in the pores of the microporous polymer. In this way, on the one hand, when preparing the ink using the composite material, the steric hindrance between the inorganic nanoparticles can be effectively increased, thereby effectively avoiding the aggregation between the inorganic nanoparticles, and then effectively improving the film-forming effect of the ink and reducing or even avoiding the generation of black spots in the prepared film. On the other hand, the cross-linking effect of the porous polymer is good, so that the evaporation rate of the solvent in the ink including the composite material can be effectively slowed down during the film preparation process, thereby effectively reducing or even avoiding the generation of holes in the prepared film. On the third hand, the microporous polymer has high thermal stability, which can effectively improve the stability of the composite material, and then improve the stability of the film prepared from the composite material. On the fourth hand, the microporous polymer has a high specific surface area, which can effectively enhance the activity and dispersibility of the inorganic nanoparticles, thereby effectively improving the dispersion performance of the composite material in the ink, and then effectively improving the charge transport and other properties of the film prepared from the composite material.

[0124] In the third aspect, please refer to Figure 1 , the embodiment of the present application also provides a method for preparing an ink, including the following steps:

[0125] Step S11: Provide an inorganic nanoparticle dispersion, where the inorganic nanoparticle dispersion includes inorganic nanoparticles and a solvent;

[0126] Step S12: Add a microporous polymer to the inorganic nanoparticle dispersion, react to load the inorganic nanoparticles on the microporous polymer to form the composite material, and obtain the ink.

[0127] In some embodiments, the inorganic nanoparticle dispersion further includes a photoinitiator and a cross-linking agent.

[0128] In some embodiments, the method for preparing the inorganic nanoparticle dispersion includes: dissolving inorganic nanoparticles, a photoinitiator, and a cross-linking agent in a solvent to obtain an inorganic nanoparticle dispersion.

[0129] In other embodiments, when the solvent is a mixed solvent of a first solvent and a second solvent, the method for preparing the inorganic nanoparticle dispersion includes: dissolving inorganic nanoparticles, a photoinitiator, and a cross-linking agent in the solvent, and then removing the second solvent to obtain an inorganic nanoparticle dispersion.

[0130] In at least some embodiments, the method for removing the second solvent is filtration.

[0131] The inorganic nanoparticles, the photoinitiator, the crosslinking agent, the solvent, the materials and proportions of the microporous polymer are as described above and will not be elaborated here.

[0132] The mass ratio of the microporous polymer to the inorganic nanoparticles is 1:(1 - 2).

[0133] In some embodiments, the temperature of the reaction is 10 - 13°C, for example, 10°C, 10.5°C, 11°C, 11.5°C, 12°C, 12.5°C, 13°C, etc., and the reaction time is 5 - 10 h, for example, 5 h, 6 h, 7 h, 8 h, 9 h, 10 h, etc. Within the range of the temperature and time, it is beneficial to obtain a composite material with better carrier performance and stability.

[0134] In some embodiments, after adding the microporous polymer to the mixed solution and before the reaction, it further includes: ultrasonic dispersion. In some embodiments, the time of the ultrasonic dispersion is 10 - 30 min. Within this time range, it is beneficial to fully and evenly disperse the solute in the solvent.

[0135] In a fourth aspect, please refer to Figure 2 , the embodiments of the present application further provide a method for preparing a thin film, including the following steps:

[0136] Step S21: Provide the ink described above, and set the ink on a substrate to obtain a wet film;

[0137] Step S22: Perform photocuring and drying on the wet film to obtain a thin film.

[0138] The ink is as described above.

[0139] The substrate can be a substrate known for thin film preparation, or a prefabricated optoelectronic device for preparing optoelectronic devices, such as an anode substrate, or a cathode substrate, or an anode substrate or cathode substrate including a light-emitting layer, or an anode substrate provided with a stacked hole functional layer, or a cathode substrate provided with a stacked electron transport layer and a light-emitting layer, etc.

[0140] In some embodiments, the photocuring includes: irradiating the wet film with ultraviolet light.

[0141] In some embodiments, the wavelength of the ultraviolet light irradiation is 270 - 380 nm, for example, 356 nm, and the time of the ultraviolet light irradiation is 3 - 10 min. Within the range of the wavelength and time, the composite material can be cured fully and effectively.

[0142] In a fifth aspect, the embodiments of the present application further provide a thin film prepared by the above preparation method.

[0143] It can be understood that when the inorganic nanoparticles are N-type inorganic semiconductor particles, the thin film can be an electronic functional thin film. When the inorganic nanoparticles are P-type inorganic semiconductor particles, the thin film can be a hole functional thin film.

[0144] In some embodiments, the thickness of the thin film is 20-50 nm.

[0145] In a sixth aspect, please refer to Figure 3 , an optoelectronic device 100 is further provided in an embodiment of the present application, which includes an anode 10 and a cathode 20 disposed opposite to each other, and further includes a first carrier functional layer 30 disposed between the anode 10 and the cathode 20. The first carrier functional layer 30 is obtained by curing and forming the ink described above. In other words, the first carrier functional layer 30 is the thin film described above.

[0146] In some embodiments, the inorganic nanoparticles in the first carrier functional layer 30 can be the N-type inorganic semiconductor particles or P-type inorganic semiconductor particles described above. In other words, the first carrier functional layer 30 can be an electron functional layer or a hole functional layer.

[0147] In some embodiments, the optoelectronic device 100 further includes a second carrier functional layer 40, and the second carrier functional layer 40 is obtained by curing and forming the ink described above. In other words, the second carrier functional layer 40 is the thin film described above.

[0148] It can be understood that the inorganic nanoparticles in the first carrier functional layer 30 can be the same as or different from the inorganic nanoparticles in the second carrier functional layer 40, that is, the types are the same, or both are N-type inorganic semiconductor particles or P-type inorganic semiconductor particles.

[0149] Please refer to Figures 4 - 5 , in at least one embodiment, the inorganic nanoparticles in the first carrier functional layer 30 are different from those in the second carrier functional layer 40. That is, please refer to Figure 4 , the inorganic nanoparticles in the first carrier functional layer 30 are P-type inorganic semiconductor particles, and the inorganic nanoparticles in the second carrier functional layer 40 are N-type inorganic semiconductor particles; or, please refer to Figure 5 , the inorganic nanoparticles in the first carrier functional layer 30 are N-type inorganic semiconductor particles, and the inorganic nanoparticles in the second carrier functional layer 40 are P-type inorganic semiconductor particles.

[0150] In some embodiments, the optoelectronic device 100 further includes a light-emitting layer 50. It can be understood that at this time, the device 100 can be a light-emitting device.

[0151] The anode 10 and the cathode 20 are electrodes known in the art for optoelectronic devices. For example, they can independently include, but are not limited to, doped metal oxide electrodes, composite electrodes, graphene electrodes, carbon nanotube electrodes, elemental metal electrodes, or alloy electrodes. The materials of the doped metal oxide electrodes can include, but are not limited to, one or more of indium-doped tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony-doped tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO), magnesium-doped zinc oxide (MZO), aluminum-doped magnesium oxide (AMO), and cadmium-doped zinc oxide. The composite electrode is an electrode formed by laminating two or more layers of conductive materials. For example, AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al, BaF2 / Ca / Al, etc. Herein, " / " represents a laminated structure. For example, AZO / Ag / AZO represents a composite electrode including an AZO layer, an Ag layer, and an AZO layer laminated in sequence. The materials of the elemental metal electrodes can include, but are not limited to, one or more of Ag, Ni, Pt, Au, Ir, Cu, Mo, Al, Ca, Mg, and Ba. The alloy electrodes include, but are not limited to, Au:Mg alloy electrodes and Ag:Mg alloy electrodes.

[0152] In some embodiments, the anode 10 is an electrode with a relatively high work function. For example, it can include, but is not limited to, a doped metal oxide electrode with a relatively high work function, an elemental metal electrode with a relatively high work function, and a carbon nanotube electrode. The elemental metal electrode with a relatively high work function can be selected from, but is not limited to, Ni, Pt, Au, Ag, Ir, etc.

[0153] In some embodiments, the cathode 20 is an electrode with a relatively low work function. For example, it can include, but is not limited to, an elemental metal electrode with a relatively low work function, a composite electrode with a relatively low work function, and an alloy electrode with a relatively low work function. The elemental metal electrode with a relatively low work function can be Ca, Ba, Al, Mg, etc. The composite electrode with a relatively low work function can be Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al, BaF2 / Ca / Al, etc. The alloy electrodes with a relatively low work function are Au:Mg and Ag:Mg, etc.

[0154] The materials of the light-emitting layer 50 can include, but are not limited to, one or more of organic light-emitting materials and quantum dot light-emitting materials.

[0155] The organic light-emitting material may include, but is not limited to, CBP:Ir(mppy)3 (4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridineiridium(III)]), TCTX:Ir(mmpy) (4,4',4”-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridineiridium]), diarylanthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent material, TTPX fluorescent material, TBRb fluorescent material, DBP fluorescent material, delayed fluorescence material, TTA material, TADF (thermally activated delayed fluorescence) material, polymer containing B-N covalent bond, HLCT (hybrid local charge transfer excited state) material, Exciplex (excited complex) light-emitting material, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives, or one or more of them.

[0156] The quantum dot light-emitting material may include, but is not limited to, one or more of single-structure quantum dots, core-shell structure quantum dots, and perovskite semiconductor materials.

[0157] The materials of the single-structure quantum dots, the core materials of the core-shell structure quantum dots, and the shell materials of the core-shell structure quantum dots may respectively include, but are not limited to, one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. The II-VI group compounds may include, but are not limited to, one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds may include, but are not limited to, one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compounds may include, but are not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The I-III-VI group compounds may include, but are not limited to, one or more of CuInS2, CuInSe2, and AgInS2.

[0158] As an example, the quantum dots of the core-shell structure may include, but are not limited to, one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, and InP / ZnSe / ZnS.

[0159] The perovskite semiconductor material may include, but is not limited to, doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors. The general structural formula of the inorganic perovskite semiconductor is AMX3, where A is a Cs + ion, M is a divalent metal cation, including Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ , Eu 2+ or more of these, and X is a halogen anion, including Cl - , Br - , I - or more of these. The general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, where B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ , Eu 2+ or more of these, and X is a halogen anion, including Cl - , Br - , I - or more of these.

[0160] It can be understood that the optoelectronic device 100 can also be provided with some functional layers that are commonly used in optoelectronic devices and are helpful for improving the performance of optoelectronic devices, such as an electron blocking layer, a hole blocking layer, an electron injection layer, an interface modification layer, etc.

[0161] It can be understood that the materials of the respective layers of the optoelectronic device 100 can be adjusted according to the light emission requirements of the optoelectronic device 100.

[0162] In some embodiments, the optoelectronic device 100 further includes a substrate, and the substrate is disposed on a side of the anode 10 away from the light-emitting layer 50, or the substrate is disposed on a side of the cathode 20 away from the light-emitting layer 50.

[0163] The substrate can be a rigid substrate or a flexible substrate. In some embodiments, the material of the substrate can include, but is not limited to, one or more of glass, silicon wafer, polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyamide, and polyethersulfone.

[0164] It can be understood that the optoelectronic device 100 can be a normal optoelectronic device or an inverted optoelectronic device. The optoelectronic device 100 can be a quantum dot optoelectronic device or an organic optoelectronic device.

[0165] At least one carrier functional layer in the optoelectronic device 100 is prepared from an ink including the composite material described in the present application, so as to have properties such as high luminous efficiency and long lifespan.

[0166] The present application further relates to a display device, and the display device includes the optoelectronic device 100.

[0167] The display device can be any electronic product having a display function, and the electronic product includes, but is not limited to, a smart phone, a tablet computer, a notebook computer, a digital camera, a digital video camera, a smart wearable device, a smart weighing electronic scale, a vehicle-mounted display, a television, or an e-book reader. Among them, the smart wearable device can be, for example, a smart bracelet, a smart watch, a virtual reality (VR) helmet, etc.

[0168] The present application will be specifically described below through specific embodiments. The following embodiments are only partial embodiments of the present application and do not limit the present application. The raw materials used in the following embodiments are all commercially available products unless otherwise specified.

[0169] Film Embodiment 1

[0170] A. Naphthalene (3.4 mmol) and dimethylformal (10.0 mmol) were fully dissolved in nitrobenzene (50 mL) at 25 °C. Subsequently, FeCl3 (10.0 mmol) was added to the reaction solution and fully dispersed under the protection of an Ar atmosphere. The hyper-crosslinking reaction was carried out in stages: first, the temperature was raised to 45 °C and reacted for 5 h, then the temperature was raised to 80 °C and reacted for 5 h, and finally the temperature was raised to 120 °C and reacted for 24 h. After the reaction was completed and cooled to room temperature, the crude product obtained by filtration was washed three times with methanol and hydrochloric acid respectively, and then washed with deionized water until the filtrate was clear. Immediately, the crude product was extracted in methanol using a Soxhlet extractor for 24 h and dried in a vacuum drying oven at 80 °C for 24 h to obtain the naphthyl hyper-crosslinked microporous polymer shown in formula (II);

[0171] B. 5 mmol of zinc oxide nanoparticles were dissolved in 10 ml of a mixed solvent of diethylene glycol:isopropanol = 2:3, and 0.05 mmol of the photoinitiator acetophenone and 2.5 mmol of 2-mercaptoethanol were doped therein to form a mixed solution;

[0172] C. 400 mg of the naphthyl hyper-crosslinked microporous polymer was added to the mixed solution, ultrasonically dispersed for 10 min, and stirred and reacted at 10 °C for 5 h to load zinc oxide on the naphthyl hyper-crosslinked microporous polymer to obtain an ink;

[0173] D. The ink was printed onto a substrate by inkjet printing. The substrate carrying the zinc oxide ink was irradiated with ultraviolet light (wavelength 365 nm) for about 5 min. After completion, it was heated at 50 °C under a vacuum of 500 mbar for about half an hour to obtain a thin film.

[0174] Thin film Example 2

[0175] A. Naphthalene (3.2 mmol) and dimethylformal (10.0 mmol) were fully dissolved in nitrobenzene (50 mL) at 25 °C. Subsequently, FeCl3 (10.0 mmol) was added to the reaction solution and fully dispersed under the protection of an Ar atmosphere. The hyper-crosslinking reaction was carried out in stages: first, the temperature was raised to 50 °C and reacted for 5 h, then the temperature was raised to 90 °C and reacted for 6 h, and finally the temperature was raised to 120 °C and reacted for 30 h. After the reaction was completed and cooled to room temperature, the crude product obtained by filtration was washed three times with methanol and hydrochloric acid respectively, and then washed with deionized water until the filtrate was clear. Immediately, the crude product was extracted in methanol using a Soxhlet extractor for 24 h and dried in a vacuum drying oven at 80 °C for 24 h to obtain the naphthyl hyper-crosslinked microporous polymer shown in formula (II);

[0176] B. 5 mmol of zinc oxide nanoparticles were dissolved in 10 ml of a mixed solvent of diethylene glycol:isopropanol = 2:3, and 0.05 mmol of the photoinitiator acetophenone and 2.5 mmol of 2-mercaptoethanol were doped therein to form a mixed solution;

[0177] C. Add 400 mg of naphthalene-based hypercrosslinked microporous polymer to the mixed solution, ultrasonically disperse for 10 min, and stir and react at 10 °C for 5 h to load zinc oxide on the naphthalene-based hypercrosslinked microporous polymer to obtain ink;

[0178] D. Print the ink onto the substrate by inkjet printing, irradiate the substrate carrying the zinc oxide ink with ultraviolet light (wavelength 365 nm) for about 5 min, and after completion, heat at 50 °C for about half an hour under a vacuum of 500 mbar to obtain a thin film.

[0179] Thin Film Example 3

[0180] A. Dissolve naphthalene (3.4 mmol) and dimethylformaldehyde (10.0 mmol) in nitrobenzene (50 mL) at 25 °C. Subsequently, add FeCl3 (10.0 mmol) to the reaction solution and disperse it thoroughly under Ar atmosphere protection. Carry out the hypercrosslinking reaction in stages: first heat to 45 °C and react for 5 h, then heat to 80 °C and react for 5 h, and finally heat to 120 °C and react for 24 h; after the reaction is completed and cooled to room temperature, wash the filtered crude product three times with methanol and hydrochloric acid respectively, then wash with deionized water until the filtrate is clear. Immediately extract the crude product in methanol for 24 h using a Soxhlet extractor and dry it in a vacuum drying oven at 80 °C for 24 h to obtain the naphthalene-based hypercrosslinked microporous polymer shown in formula (II);

[0181] B. Dissolve 5 mmol of zinc oxide nanoparticles in 10 ml of a mixed solvent of diethylene glycol:ethanol = 1:1, and dope 0.05 mmol of photoinitiator benzophenone and 2.5 mmol of 2-mercaptoethanol into it to form a mixed solution;

[0182] C. Add 400 mg of naphthalene-based hypercrosslinked microporous polymer to the mixed solution, ultrasonically disperse for 10 min, and stir and react at 10 °C for 5 h to load zinc oxide on the naphthalene-based hypercrosslinked microporous polymer to obtain ink;

[0183] D. Print the ink onto the substrate by inkjet printing, irradiate the substrate carrying the zinc oxide ink with ultraviolet light (wavelength 365 nm) for about 5 min, and after completion, heat at 50 °C for about half an hour under a vacuum of 500 mbar to obtain a thin film.

[0184] Thin Film Example 4

[0185] This example is basically the same as Thin Film Example 1, except that in step C of this example, 200 mg of naphthalene-based hypercrosslinked microporous polymer is added to the mixed solution.

[0186] Thin Film Example 5

[0187] This example is basically the same as Thin Film Example 1, except that in step C of this example, 300 mg of naphthyl hypercrosslinked microporous polymer is added to the mixed solution.

[0188] Thin Film Example 6

[0189] This example is basically the same as Thin Film Example 1, except that in step C of this example, the reaction is stirred at 11.5 °C for 5 h.

[0190] Thin Film Example 7

[0191] This example is basically the same as Thin Film Example 1, except that in step C of this example, the reaction is stirred at 13 °C for 5 h.

[0192] Thin Film Example 8

[0193] This example is basically the same as Thin Film Example 1, except that in step C of this example, the reaction is stirred at 10 °C for 7 h.

[0194] Thin Film Example 9

[0195] This example is basically the same as Thin Film Example 1, except that in step C of this example, the reaction is stirred at 10 °C for 10 h.

[0196] Thin Film Example 10

[0197] This example is basically the same as Thin Film Example 1, except that in step B of this example, the addition amount of the photoinitiator is 0.025 mmol.

[0198] Thin Film Example 11

[0199] This example is basically the same as Thin Film Example 1, except that in step B of this example, the addition amount of the photoinitiator is 0.005 mmol.

[0200] Thin Film Example 12

[0201] This example is basically the same as Thin Film Example 1, except that in step B of this example, the addition amount of the crosslinking agent is 2.42.5 mmol.

[0202] Thin Film Example 13

[0203] This example is basically the same as Thin Film Example 1, except that in step B of this example, the addition amount of the crosslinking agent is 2.62.5 mmol.

[0204] Thin Film Example 14

[0205] This example is basically the same as Thin Film Example 1, except that in step B of this example, the photoinitiator α-hydroxyalkyl phenyl ketone is used to replace the photoinitiator diphenyl ethanone in Example 1.

[0206] Thin Film Example 15

[0207] This example is basically the same as Thin Film Example 1, except that in step B of this example, the crosslinking agent benzenethiol is used to replace the crosslinking agent 2-mercaptoethanol in Example 1.

[0208] Thin Film Example 16

[0209] This example is basically the same as Thin Film Example 1, except that in step A of this example, dimethylnaphthalene is used to replace naphthalene in Example 1.

[0210] Thin Film Example 17

[0211] This example is basically the same as Thin Film Example 1, except that in step B of this example, diethyl formal is used to replace dimethyl formal in Example 1.

[0212] Thin Film Example 18

[0213] This example is basically the same as Thin Film Example 1, except that in this example, Mg-doped ZnO nanoparticles are used to replace zinc oxide in Example 1.

[0214] Thin Film Example 19

[0215] This example is basically the same as Thin Film Example 1, except that in this example, SnO2 nanoparticles are used to replace zinc oxide in Example 1.

[0216] Thin Film Comparative Example 1

[0217] Dissolve 5 mmol of zinc oxide nanoparticles in 10 ml of a mixed solvent of diethylene glycol:ethanol = 2:3, and dope 0.05 mmol of the photoinitiator diphenyl ethanone and 5 mmol of 2-mercaptopropanol into it to form an ink;

[0218] Print the ink onto the substrate by inkjet printing, irradiate the substrate carrying the ink with ultraviolet light (wavelength 365 nm) for about 5 minutes, and after completion, heat it at a vacuum degree of 500 mbar and 50 °C for about half an hour to obtain a thin film.

[0219] Thin Film Comparative Example 2

[0220] Dissolve 5 mmol of zinc oxide nanoparticles in 10 ml of a mixed solvent of diethylene glycol:ethanol = 2:3 to obtain an ink;

[0221] The ink is printed onto the substrate by inkjet printing. The substrate carrying the ink is irradiated with ultraviolet light (wavelength 365 nm) for about 5 min. After completion, it is heated at 50 °C under a vacuum of 500 mbar for about half an hour to obtain a thin film.

[0222] Thin film comparative example 3

[0223] Dissolve 5 mmol of Mg-doped ZnO nanoparticles in 10 ml of a mixed solvent of diethylene glycol:ethanol = 2:3, and dope 0.05 mmol of the photoinitiator diphenylacetone and 5 mmol of 2,3-dimercaptopropanol into it to form an ink;

[0224] The ink is printed onto the substrate by inkjet printing. The substrate carrying the ink is irradiated with ultraviolet light (wavelength 365 nm) for about 5 min. After completion, it is heated at 50 °C under a vacuum of 500 mbar for about half an hour to obtain a thin film.

[0225] Thin film comparative example 4

[0226] Dissolve 5 mmol of SnO2 nanoparticles in 10 ml of a mixed solvent of diethylene glycol:ethanol = 2:3, and dope 0.05 mmol of the photoinitiator diphenylacetone and 5 mmol of 2,3-dimercaptopropanol into it to form an ink;

[0227] The ink is printed onto the substrate by inkjet printing. The substrate carrying the ink is irradiated with ultraviolet light (wavelength 365 nm) for about 5 min. After completion, it is heated at 50 °C under a vacuum of 500 mbar for about half an hour to obtain a thin film.

[0228] The thin films of thin film examples 1 - 3 and thin film comparative example 1 are placed under a microscope to obtain Figures 6 - 9 the microscope images shown.

[0229] From Figures 6 - 9 it can be seen that compared with the thin film of comparative example 1, the thin films of examples 1 - 3 have fewer black dots and holes and are more uniform and dense.

[0230] Device example 1

[0231] Provide an ITO anode with a thickness of 30 nm;

[0232] Spin-coat PEDOT:PSS material on the anode and anneal it at 100 °C for 15 min to obtain a hole injection layer with a thickness of 30 nm;

[0233] Spin-coat TFB material on the hole injection layer and anneal it at 100 °C for 15 min to obtain a hole transport layer with a thickness of 30 nm;

[0234] Deposit quantum dots on the hole transport layer to obtain a light-emitting layer with a thickness of 40 nm;

[0235] Use the preparation method of Film Example 1 to prepare a film on the light-emitting layer to obtain an electron transport layer with a thickness of 40 nm;

[0236] Evaporate Ag on the electron transport layer to obtain a cathode with a thickness of 80 nm;

[0237] Encapsulate to obtain an optoelectronic device.

[0238] Device Examples 2-19

[0239] Device Examples 2-19 are basically the same as Device Example 1, except that in Device Examples 2-19, films are prepared on the light-emitting layer using the preparation methods of Film Examples 2-19 respectively.

[0240] Device Comparative Examples 1-4

[0241] Device Comparative Examples 1-4 are basically the same as Device Example 1, except that in Device Comparative Examples 1-4, films are prepared on the light-emitting layer using the preparation methods of Film Comparative Examples 1-4 respectively.

[0242] Measure the maximum external quantum efficiency EQE max , maximum brightness L max , lifetime T95 and lifetime T95@1000 nit of the optoelectronic devices of Device Examples 1-19 and Device Comparative Examples 1-4 respectively, and the test results are shown in Table 1.

[0243] Among them, the test method for the maximum external quantum efficiency EQE max is as follows: Use a FushiDa FPD optical property measurement device, and through an efficiency test system built by controlling a QE PRO spectrometer, Keithley 2400, and Keithley 6485 with LabView, measure parameters such as voltage, current, brightness, and emission spectrum, and calculate the maximum external quantum efficiency EQE max of the device. The specific calculation formula is as follows:

[0244]

[0245] In the formula, ηe is the light output coupling efficiency, ηr is the ratio of the number of recombined carriers to the number of injected carriers, χ is the ratio of the number of excitons generating photons to the total number of excitons, KR is the radiation process rate, and KNR is the non-radiation process rate.

[0246] The maximum brightness L maxThe test method for the lifetime T95@1000nit is as follows: In CDA gas, under the drive of a constant current or voltage, the time taken for the brightness of the device to decay to a certain proportion of the maximum brightness is measured. The time when the brightness decays to 95% of the maximum brightness is defined as T95, and this lifetime is the measured lifetime. To shorten the lifetime test cycle, the device lifetime test is usually carried out by accelerating the device aging at high brightness, and the lifetime at low brightness is obtained by fitting through the decay fitting formula. For example, the lifetime at 1000 nits is denoted as T95@1000nits, and the calculation formula is:

[0247]

[0248] where T95 L is the lifetime at low brightness, generally taking the lifetime at 1000 nits, T95 H is the lifetime at high brightness, that is, the measured lifetime, L H is the maximum brightness to which the device is accelerated, L L is generally 1000 nits, A is the acceleration factor, taking 1.7. Among them, the constant current is 1 mA.

[0249] Table 1:

[0250]

[0251]

[0252] It can be seen from Table 1 that:

[0253] Compared with the optoelectronic devices of Comparative Examples 1-2, the optoelectronic devices of Examples 1-17 have higher maximum external quantum efficiency, higher maximum brightness and longer lifetime. It can be seen that the composite materials and inks of the present application can effectively improve the external quantum efficiency, brightness and lifetime of the devices. The reason may be that in the composite materials of the present application, the inorganic nanoparticles are loaded in the pores of the microporous polymer, which can effectively increase the steric hindrance between the inorganic nanoparticles, thereby effectively avoiding the aggregation between the inorganic nanoparticles; in addition, the cross-linking effect of the porous polymer is good, which can effectively slow down the evaporation rate of the solvent in the preparation process of the ink including the composite material; further, the composite material has high stability, activity and dispersibility;

[0254] Compared with the optoelectronic device of Comparative Example 3, the optoelectronic device of Example 18 has a higher maximum external quantum efficiency, a higher maximum brightness, and a longer lifespan. It can be seen that the composite material and ink of the present application can effectively improve the external quantum efficiency, brightness, and lifespan of the device. The reason may be that in the composite material of the present application, the inorganic nanoparticles are loaded in the pores of the microporous polymer, which can effectively increase the steric hindrance between the inorganic nanoparticles, thereby effectively avoiding aggregation between the inorganic nanoparticles. In addition, the cross-linking effect of the porous polymer is good, which can effectively slow down the evaporation rate of the solvent in the ink including the composite material during the preparation of the film. Further, the composite material has high stability, activity, and dispersibility;

[0255] Compared with the optoelectronic device of Comparative Example 4, the optoelectronic device of Example 19 has a higher maximum external quantum efficiency, a higher maximum brightness, and a longer lifespan. It can be seen that the composite material and ink of the present application can effectively improve the external quantum efficiency, brightness, and lifespan of the device. The reason may be that in the composite material of the present application, the inorganic nanoparticles are loaded in the pores of the microporous polymer, which can effectively increase the steric hindrance between the inorganic nanoparticles, thereby effectively avoiding aggregation between the inorganic nanoparticles. In addition, the cross-linking effect of the porous polymer is good, which can effectively slow down the evaporation rate of the solvent in the ink including the composite material during the preparation of the film. Further, the composite material has high stability, activity, and dispersibility.

[0256] The technical solutions provided in the embodiments of the present application have been introduced in detail above. Specific examples are used in this article to elaborate on the principle and implementation manner of the present application. The description of the above embodiments is only used to help understand the method and its core idea of the present application; at the same time, for those skilled in the art, according to the idea of the present application, there will be changes in the specific implementation manner and application scope. In summary, the content of this specification should not be construed as a limitation to the present application.

Claims

1. An ink, characterized in that, Comprising inorganic nanoparticles, microporous polymers and solvents, wherein, the inorganic nanoparticles are distributed inside the microporous polymers; and / or the inorganic nanoparticles are distributed in the pores of the microporous polymers; and / or the inorganic nanoparticles are distributed on the surface of the microporous polymers.

2. The ink according to claim 1, characterized in that, the mass ratio of the microporous polymer to the inorganic nanoparticles is 1:(1 - 2); and / or the concentration range of the ink is 10 - 60 mg / ml.

3. The ink according to claim 1, characterized in that, The microporous polymer comprises one or more of amorphous microporous polymers and crystalline microporous polymers, wherein, the amorphous microporous polymers comprise one or more of hypercrosslinked microporous polymers, conjugated microporous polymers, self - contained microporous polymers, porous aromatic frameworks and porous organic cages; and / or the crystalline microporous polymers comprise covalent organic frameworks.

4. The ink according to claim 3, wherein The hypercrosslinked microporous polymer comprises a naphthyl - based hypercrosslinked microporous polymer, wherein the naphthyl - based hypercrosslinked microporous polymer is formed by cross - linking monomers shown in formula (I): Wherein, L1, L2, L3, L4, L5, L6, L7, L8 are each independently selected from a single bond, unsubstituted or substituted -(CH2) n1 -, -(CH2) n2 CH=CH(CH2) n3 -, -(CH2) n4 C≡C(CH2) n5 -, -(CH2) n6 O(CH2) n7 -, -(CH2) n8 (OCH2) n9 -, -(CH2) n10 CO(CH2) n11 -, -(CH2) n12 NHCO(CH2) n13 -, -(CH2) n14 CONH(CH2) n15 -, -(CH2) n16 OCO(CH2) n17 -, and -(CH2) n18 COO(CH2) n19 - or a combination of two or more thereof, wherein n1 to n19 are each independently selected from integers from 1 to 20, and the substituents of the substituted ones include halogen, hydroxyl, nitro, cyano, isocyano, silyl, C1-C 20 alkyl, C1-C 20 alkoxy, C1-C 20 alkylthio, aryl having 6 to 60 ring atoms, aryloxy having 6 to 60 ring atoms, arylthio having 6 to 60 ring atoms, or one or more of them; * is a connection site, and the cross - linking monomers are cross - linked through at least one connection site to form a naphthyl - based hypercrosslinked microporous polymer.

5. The ink according to claim 4, characterized in that, L1, L2, L3, L4, L5, L6, L7, L8 are each independently selected from a single bond, unsubstituted or substituted -(CH2) n1 -, -(CH2) n2 CH=CH(CH2) n3 -, -(CH2) n4 C≡C(CH2) n5 -, and one or more combinations thereof, wherein n1 to n5 are each independently selected from integers from 1 to 10, and the substituents for substitution include halogen, hydroxyl, nitro, cyano, isocyano, silyl, C1-C 10 alkyl, C1-C 10 alkoxy, C1-C 10 alkylthio, aryl having 6 to 30 ring atoms, aryloxy having 6 to 30 ring atoms, and arylthio having 6 to 30 ring atoms, one or more of them.

6. The ink according to claim 4, characterized in that L1, L2, L3, L4, L5, L6, L7, L8 are each independently selected from a single bond, unsubstituted or substituted -(CH2) n1 -, where n1 is selected from integers from 1 to 10, and the substituents for substitution include one or more of halogen, hydroxy, C1-C 10 alkyl groups.

7. The ink according to claim 4, wherein The naphthyl - based hypercrosslinked microporous polymer has a structure shown in formula (II):

8. The ink according to any one of claim 1, characterized in that, the inorganic nanoparticles comprise N - type inorganic semiconductor particles, the N - type inorganic semiconductor particles comprise one or more of first - doped metal oxide particles, first non - doped metal oxide particles, IIB - VIA group semiconductor materials, IIIA - VA group semiconductor materials and IB - IIIA - VIA group semiconductor materials, the materials of the first non - doped metal oxide particles comprise one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, the metal oxides in the first - doped metal oxide particles comprise one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, Al2O3, the doping elements in the first - doped metal oxide particles comprise one or several of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, the IIB - VIA group semiconductor materials comprise one or more of ZnS, ZnSe, CdS, the IIIA - VA group semiconductor materials comprise one or more of InP, GaP, and the IB - IIIA - VIA group semiconductor materials comprise one or more of CuInS, CuGaS; and / or The inorganic nanoparticles include P-type inorganic semiconductor particles, and the P-type inorganic semiconductor particles include one or more of second doped metal oxide particles, second undoped metal oxide particles, metal sulfides and metal nitrides, wherein the metal oxide in the second doped metal oxide particles and the metal oxide in the second undoped metal oxide particles each independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, V2O5, the doping elements in the second doped metal oxide particles include one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfides include one or more of CuS, MoS3, WS3, and the metal nitride includes P-type gallium nitride.

9. The ink according to claim 1, characterized in that, The solvent includes one or more of a first solvent and a second solvent, wherein the boiling point of the first solvent is greater than the boiling point of the second solvent.

10. The ink according to claim 9, characterized in that The boiling point of the first solvent is greater than or equal to 150° C. Preferably, the first solvent comprises a polyol, and the polyol comprises one or more of ethylene glycol, diethylene glycol, dipropylene glycol, and glycerol; and / or The boiling point of the second solvent is less than 150° C., preferably, the second solvent comprises a monohydric alcohol, and further, the monohydric alcohol comprises one or more of methanol, ethanol, isopropanol, and n-butanol; and / or The volume ratio of the first solvent to the second solvent is 2:3 to 1:

1.

11. The ink according to claim 1, characterized in that, The ink also includes a photoinitiator and a cross-linking agent, wherein: The photoinitiator includes one or more of benzoin and derivative photoinitiators, benzil photoinitiators, alkyl phenone photoinitiators, acylphosphine oxide photoinitiators, benzophenone photoinitiators, thioxanthone photoinitiators, and organic salt photoinitiators, wherein the benzoin and derivative photoinitiators include one or more of benzoin, benzoin dimethyl ether, benzoin ethyl ether, benzoin isopropyl ether, and benzoin butyl ether, the benzil photoinitiator includes one or more of diphenyl acetophenone and α,α-dimethoxy-α-phenylacetophenone, and the alkyl phenone photoinitiator includes α,α- One or more of diethoxyacetophenone, α-hydroxyalkylphenone, α-aminoalkylphenone, the acylphosphine oxide photoinitiator includes one or more of aromatic acylphosphine oxide and bisbenzoylphenylphosphine oxide, the benzophenone photoinitiator includes one or more of benzophenone, 2,4-dihydroxybenzophenone and Michler's ketone, the thioxanthone photoinitiator includes one or more of thiopropoxythioxanthone and isopropylthioxanthone, the organic salt photoinitiator includes one or more of diaryliodonium salt, triaryliodonium salt, alkyliodonium salt and isopropylferrocenium hexafluorophosphate; and / or The cross-linking agent includes a thiol compound, and the thiol compound includes one or more of dimercaptoethanol, dimercaptopropanol, mercaptoethanol, thioglycolic acid, thiophenol, and cysteine; and / or The molar ratio of the photoinitiator to the inorganic nanoparticles is (0.001 - 0.01):1; and / or The mass of the crosslinking agent is 40% - 60% of the mass of the inorganic nanoparticles.

12. A method for preparing an ink, characterized in that, Comprising the following steps: Providing an inorganic nanoparticle dispersion, which includes inorganic nanoparticles and a solvent; Adding a microporous polymer to the inorganic nanoparticle dispersion and reacting to obtain an ink.

13. The preparation method according to claim 12, wherein The mass ratio of the microporous polymer to the inorganic nanoparticles is 1:(1 - 2); and / or The temperature of the reaction is 10 - 13°C; and / or The inorganic nanoparticle dispersion further includes a photoinitiator and a crosslinking agent.

14. A method for preparing a thin film, characterized in that, Comprising the following steps: Providing the ink according to any one of claims 1 - 13, disposing the ink on a substrate to obtain a wet film; and Performing photocuring and drying on the wet film to obtain a thin film.

15. The preparation method according to claim 14, characterized in that, The photocuring includes: irradiating the wet film with ultraviolet light, wherein the wavelength of the ultraviolet light irradiation is 270 - 380 nm and the time is 3 - 10 min.

16. A film, characterized in that, The thin film is prepared by the preparation method according to any one of claims 14 - 15.

17. An optoelectronic device, characterized in that, Comprising an anode and a cathode disposed opposite to each other, and further including a first carrier functional layer disposed between the anode and the cathode, and the first carrier functional layer is the thin film according to claim 16.

18. The optoelectronic device according to claim 17, wherein The optoelectronic device further includes a second carrier functional layer, and the first carrier functional layer is the thin film according to claim 16, wherein The inorganic nanoparticles in the first carrier functional layer are P-type inorganic semiconductor particles, and the inorganic nanoparticles in the second carrier functional layer are N-type inorganic semiconductor particles; or The inorganic nanoparticles in the first carrier functional layer are N-type inorganic semiconductor particles, and the inorganic nanoparticles in the second carrier functional layer are P-type inorganic semiconductor particles.

19. The optoelectronic device according to claim 17, wherein The anode and the cathode each independently include a doped metal oxide electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a metal elemental electrode or an alloy electrode. The material of the doped metal oxide electrode includes one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, aluminum-doped magnesium oxide, cadmium-doped zinc oxide. The composite electrode includes AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al or BaF2 / Ca / Al. The material of the metal elemental electrode includes one or more of Ag, Ni, Pt, Au, Ir, Cu, Mo, Al, Ca, Mg and Ba. The alloy electrode includes an Au:Mg alloy electrode or an Ag:Mg alloy electrode; and / or The optoelectronic device further includes a light-emitting layer, which is located between the anode and the first charge carrier functional layer or between the cathode and the first charge carrier functional layer. The material of the light-emitting layer includes one or more of an organic light-emitting material and a quantum dot light-emitting material. The organic light-emitting material includes one or more of 4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridineiridium(III)], 4,4',4''-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridineiridium, diarylanthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent material, TTPX fluorescent material, TBRb fluorescent material, DBP fluorescent material, delayed fluorescence material, TTA material, thermally activated delayed material, a polymer containing a B-N covalent bond, a hybrid locally charge transfer excited state material, an exciplex light-emitting material, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives;The quantum dot light-emitting material includes one or more of single-structure quantum dots, core-shell structure quantum dots, and perovskite semiconductor materials. The materials of the single-structure quantum dots, the core materials of the core-shell structure quantum dots, and the shell materials of the core-shell structure quantum dots are each independently selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. The II-VI group compounds include one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds include one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compounds include one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The I-III-VI group compounds include one or more of CuInS2, CuInSe2, and AgInS2. The perovskite semiconductor material includes doped or undoped inorganic perovskite semiconductors or organic-inorganic hybrid perovskite semiconductors. The structural general formula of the inorganic perovskite semiconductor is AMX3, where A is Cs; + ions, M is a divalent metal cation, including Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ 、Cd 2+ 、Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ 、Eu 2+ one or more of Cd, Cr, Mn, Co, Fe, Ge, Yb, Eu, X is a halogen anion including Cl - 、Br - 、I - one or more of Br, I; the structural general formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, where B is an organic amine cation including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation including Pb 2+ 、Sn 2+ 、Cu 2+ 、Ni 2 + 、Cd 2+ 、Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ 、Eu 2+ one or more of Pb, Sn, Cu, Ni, Cd, Cr, Mn, Co, Fe, Ge, Yb, Eu, X is a halogen anion including Cl - 、Br - 、I - one or more of Br, I.

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