Method for fixing substrate in vacuum deposition process
By cleaning and heating the metal foil to adhere to it, the problem of position movement of small-sized substrates in the vacuum deposition process is solved, providing a simple, economical and pollution-free fixing method, and the metal foil can be reused.
Patent Information
- Application Number
- CN202311865458.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-12-29
- Publication Date
- 2025-07-01
AI Technical Summary
Prior Art In vacuum deposition processes, small-sized substrates are prone to move positions due to their small mass, and common fixing methods have problems of additional contamination or uneconomicality.
By cleaning the substrate and the stage, the metal foil is placed on the stage and heated to adhere, and then the cleaned substrate is placed on the metal foil adhered to the stage, and the substrate is fixed by using the adhesion of the metal foil.
Simple, no additional pollution and economical substrate fixation in the vacuum deposition process is achieved, ensuring stable substrate fixation throughout the process, avoiding additional machining or contamination, and the metal foil can be reused.
Smart Images
Figure CN120231031A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of vacuum deposition, and particularly to a method for fixing a substrate in a vacuum deposition process. Background Art
[0002] In a vacuum deposition process, when evacuating the deposition equipment or under the action of the working gas flow, small-sized substrates are often prone to position movement due to their small mass. Currently, common methods for fixing substrates, especially small substrates, mainly include mechanical clamping schemes, limit fixing schemes, electrostatic chuck schemes, substrate spin coating and curing fixing schemes, and brazing schemes.
[0003] However, these schemes either require additional fixing components, mechanical processing or treatment operations, or cause additional contamination due to adhesives and / or welding media, or lack economy. Summary of the Invention
[0004] In order to solve the above technical problems, the present invention provides a method for fixing a substrate in a vacuum deposition process.
[0005] For the above purposes, an embodiment of the present invention relates to a method for fixing a substrate in a vacuum deposition process. The vacuum deposition process is carried out in a deposition equipment, and the deposition equipment includes a stage for placing the substrate. The fixing method includes: cleaning the substrate and the stage; placing a metal foil on the stage, and the metal foil remains chemically thermally stable at a temperature of 900 °C; heating the metal foil to make the metal foil adhere to the stage; and placing the cleaned substrate on the metal foil adhered to the stage.
[0006] In some embodiments, the substrate includes a base material and a semiconductor thin film plated on the base material, and the base material is composed of Si, Al2O3 or SiC.
[0007] In some embodiments, the semiconductor thin film is composed of GaN, Ga2O3 or InP.
[0008] In some embodiments, the stage is composed of molybdenum, iridium or silicon.
[0009] In some embodiments, the cleaning includes ultrasonically cleaning the substrate and the stage with absolute ethanol at not less than 240 W for 5 min - 8 min, and then continuously rinsing with deionized water for more than 60 s.
[0010] In some embodiments, the cleaning includes drying the substrate and the stage rinsed with deionized water at a temperature of 60 °C - 70 °C for no more than 12 h.
[0011] In some embodiments, the metal foil includes at least one of gold foil and indium foil.
[0012] In some embodiments, the thickness of the metal foil is less than 0.1 mm.
[0013] In some embodiments, the size of the metal foil is not less than that of the substrate.
[0014] In some embodiments, heating the metal foil includes blowing hot air over the metal foil on the stage until the metal foil lies flat on the stage.
[0015] In some embodiments, heating the metal foil includes slowly flattening the metal foil with a hot air gun.
[0016] In some embodiments, heating the metal foil includes placing the hot air gun directly above the metal foil at a distance of 50 cm - 70 cm and continuously blowing the metal foil with a power of less than 100 W for no more than 5 minutes.
[0017] In some embodiments, heating the metal foil includes clamping and laying flat the metal foil with tweezers.
[0018] In some embodiments, attaching the cleaned substrate to the metal foil adhered to the stage includes placing the cleaned substrate on the metal foil lying flat on the stage and pressing the substrate with a pressure within 100 kPa.
[0019] The technical solutions of the embodiments of the present application can be conducive to providing a fixing method for the substrate in a vacuum deposition process with simple process, no additional pollution and economy, etc.
[0020] Under the condition that technical conditions permit, the technical solutions of the embodiments in the present application can be combined arbitrarily.
[0021] The present application will be further described below with reference to the accompanying drawings. The same or similar reference numerals may be used in the drawings to refer to the same or similar elements, devices, shapes, structures, steps in different embodiments. The descriptions of the same or similar elements, devices, shapes, structures, steps, features, effects in different embodiments may also be omitted, as well as the descriptions of the same or similar elements, devices, shapes, structures, steps, features, effects as those in the prior art. BRIEF DESCRIPTION OF THE DRAWINGS
[0022] Figure 1 It is a schematic structural diagram of a substrate according to an embodiment of the present invention;
[0023] Figures 2-6 Each is a schematic diagram during the implementation of the fixing method for the substrate in the vacuum deposition process according to an embodiment of the present invention;
[0024] Figure 7 It is a photo of the position change of the substrate on the stage within 5 minutes in the vacuum deposition process during the growth of diamond on a Si substrate (substrate) coated with a GaN thin film according to the embodiment without using the fixing method for the substrate in the vacuum deposition process according to the embodiment of the present invention;
[0025] Figure 8 In the process of growing diamond on a Si substrate (substrate) coated with a GaN thin film in the embodiment, it is a photo of the position change of the substrate on the stage within 60 h in the vacuum deposition process;
[0026] Figure 9 In the embodiment, it is the Raman characterization result corresponding to the diamond grown on the GaN surface; and
[0027] Figure 10 In the embodiment, it is the XRD characterization result of the diamond grown on the GaN surface. Detailed implementation manners
[0028] Figure 1 It is a schematic structural diagram of the substrate according to the embodiment of the present invention. Figure 2 It is a top view schematic diagram of the metal foil placed on the stage. Figure 3 It is a front view schematic diagram of the metal foil placed on the stage. Figure 4 It is a top view schematic diagram of the substrate placed on the metal foil adhered to the stage. Figure 5 It is a front view schematic diagram of the substrate placed on the metal foil adhered to the stage. As Figures 1-5 shown, the embodiment of the present invention relates to a method for fixing a substrate in a vacuum deposition process. The vacuum deposition process is carried out in a deposition device (not shown). The deposition device includes a stage 12 for placing the substrate 10. The fixing method includes: cleaning the substrate 10 and the stage 12; placing the metal foil 14 on the stage 12, and the metal foil 14 remains chemically thermally stable at a temperature of 900 °C; heating the metal foil 14 to make the metal foil 14 adhere to the stage 12; and placing the cleaned substrate 10 on the metal foil 14 adhered to the stage 12.
[0029] In this way, it is beneficial to a method for fixing the substrate 10 in a vacuum deposition process with simple process, no additional pollution and economy.
[0030] The substrate 10 can be any substrate in the vacuum deposition process. For example, a small-sized sheet substrate, as long as it is applicable to the present invention.
[0031] The stage 12 can be a stage for preventing the substrate 10 in any deposition device, as long as it is applicable to the present invention.
[0032] Cleaning the substrate 10 and the stage 12 is beneficial to removing the residual impurities on the substrate 10 and the stage 12 and preventing additional pollution from being introduced in the subsequent vacuum deposition process. At the same time, it also helps the metal foil 14 to better fix the substrate 10 on the stage 12.
[0033] The maximum temperature in the vacuum deposition process is usually between 800°C and 900°C, and the metal foil 14 remains chemically thermally stable at a temperature of 900°C, so no additional contamination is introduced in the vacuum deposition process.
[0034] By heating the metal foil 14, referring to Figure 2 , the metal foil 14 can be made to have adhesiveness to the carrier 12 and adhere to the carrier 12. Then, the cleaned substrate 10 is directly placed on the metal foil 14 adhered to the carrier 12, and the substrate 10 and the carrier 12 can be bonded together through the metal foil 14, and the fixing process of the substrate 10 is simple.
[0035] The metal foil 14 in the fixing method described in this application can be reused at least 64 times, which has economy.
[0036] In the subsequent vacuum deposition process, the adhesive forces between the metal foil 14 and the carrier 12 and between the metal foil 14 and the substrate 10 are not less than the forces exerted on the metal foil 14 and the substrate 10 by the deposition equipment, such as the forces generated by the vacuum pumping or the working gas flow of the deposition equipment, so that the substrate 10 is effectively fixed on the carrier 12 throughout the vacuum deposition process (see Figure 8 ).
[0037] In some embodiments, the substrate 10 includes a base material 11 and a semiconductor thin film 13 plated on the base material, and the base material is composed of Si, Al2O3 or SiC.
[0038] The base material 11 can also be composed of materials other than Si, Al2O3 and SiC, as long as it is applicable to the present invention.
[0039] In some embodiments, the semiconductor thin film is composed of GaN, Ga2O3 or InP.
[0040] The semiconductor thin film 13 can also be composed of materials other than GaN, Ga2O3 and InP, as long as it is applicable to the present invention.
[0041] In some embodiments, the carrier 12 is composed of molybdenum, iridium or silicon.
[0042] The carrier 12 can also be composed of materials other than molybdenum, iridium or silicon, as long as it is applicable to the present invention.
[0043] In some embodiments, the cleaning includes ultrasonically cleaning the substrate 10 and the carrier 12 with absolute ethanol at not less than 240W for 5 min - 8 min, and then continuously rinsing with deionized water for more than 60 s.
[0044] In the embodiments of the present application, unless otherwise specifically indicated, a numerical range may include any sub-range therein. For example, less than 5 min - 8 min may include 5 min, 6 min, 7 min, 8 min, and so on.
[0045] In some embodiments, cleaning includes drying the substrate 10 and the stage 12 after rinsing with deionized water at a temperature of 60°C - 70°C for no more than 12 h.
[0046] Specifically, the substrate 10 and the stage 12 after rinsing with deionized water can be placed in an oven at 60°C - 70°C for no more than 12 h.
[0047] In some embodiments, the metal foil 14 includes at least one of a gold foil and an indium foil.
[0048] The metal foil 14, such as a gold foil and an indium foil, will soften when heated and can have a certain adhesiveness. Therefore, after heating the gold foil and / or indium foil to soften it, the substrate 10 can be directly adhered to the stage 12 through it. In the subsequent vacuum deposition process, the metal foil 14 will further soften under high-temperature conditions, and then the substrate 10 can be better adhered and fixed on the stage 12.
[0049] In some embodiments, the thickness of the metal foil 14 is less than 0.1 mm.
[0050] In some embodiments, the size of the metal foil 14 is not less than that of the substrate 10.
[0051] In some embodiments, the thickness of the substrate 10 can be about 5 mm. When the shape of the substrate 10 is square, its area size can be 5 mm x 5 mm - 2 inches x 2 inches; when the shape of the substrate 10 is circular, its diameter size can be 5 mm - 2 inches.
[0052] Figure 6 It is a schematic diagram of cutting the metal foil according to the size of the substrate. As Figure 6 shown, the metal foil 14 can be cut to the same size as the substrate 10. For example, it can be cut to a size of 8 mm × 8 mm, so that the stage 12 and the substrate 10 are covered with the metal foil 14, so as to prevent the metal foil 14 from changing the heat conduction or heat dissipation between the substrate 10 and the stage 12, thereby causing the surface temperature distribution of the substrate 10 to be extremely uneven and seriously affecting the quality of the film layer grown in the subsequent vacuum deposition process.
[0053] In some embodiments, heating the metal foil 14 includes blowing hot air on the metal foil 14 on the stage 12 until the metal foil 14 lies flat on the stage 12.
[0054] In this way, it is beneficial to make the surface of the metal foil 14 adhered to the stage 12 flat, and the surface temperature distribution of the substrate 10 placed on the metal foil 14 subsequently is uniform.
[0055] In some embodiments, heating the metal foil 14 includes slowly flattening the metal foil 14 with a hot air gun.
[0056] The specifications of the hot air gun are not limited as long as it is applicable to the present invention.
[0057] In some embodiments, heating the metal foil 14 includes placing the hot air gun directly above the metal foil 14 at a distance of 50 cm - 70 cm and continuously purging the metal foil 14 at a power below 100 W for no more than 5 minutes.
[0058] In some embodiments, heating the metal foil 14 includes clamping and laying flat the metal foil 14 with tweezers.
[0059] While purging the metal foil 14 with the hot air gun, the metal foil 14 can be clamped with tweezers and slowly manipulated to flatten it on the stage 12.
[0060] In some embodiments, attaching the cleaned substrate 10 to the metal foil 14 adhered to the stage 12 includes placing the cleaned substrate 10 on the metal foil 14 laid flat on the stage 12 and pressing the substrate 10 with a pressure within 100 kPa.
[0061] Place the cleaned substrate 10 on the metal foil 14 laid flat on the stage 12 and gently press the substrate 10 by hand to make it close to the metal foil 14, then the substrate 10 can be fixed on the stage 12.
[0062] The fixed substrate 10 can be placed in the deposition equipment cavity together with the stage 12 for vacuum deposition process. After the vacuum deposition process, the substrate 10 can be directly removed from the stage 12 with tweezers, and the residual metal foil 14 on the substrate 10 can be removed by ultrasonic cleaning.
[0063] Embodiment
[0064] Clean the substrate and the stage: Ultrasonically clean the Si substrate (substrate) coated with a 2 - μm - thick GaN film and the molybdenum stage with absolute ethanol at 240 W for 7 minutes respectively, then continuously rinse with deionized water for 1.5 minutes, and then place them in a drying oven at 65 °C for 12 hours simultaneously to ensure that the substrate and the stage are dry and have a clean surface.
[0065] Prepare and heat the metal foil: Cut the gold foil to a size of 8×8 mm (it is sufficient to be consistent with the actual size of the above - mentioned substrate), place the gold foil in the center of the molybdenum stage, and then use a hot air gun to continuously purge the gold foil directly above it at a distance of 60 cm and a power of 100 W for 5 minutes to keep the gold foil flat and adhered to the molybdenum stage.
[0066] Fix the substrate: Place the above - mentioned substrate directly above the gold foil and gently press it by hand to make it close to the molybdenum stage to complete the fixation of the substrate.
[0067] Place the substrate that has been fixed together with the molybdenum stage into the cavity of the plasma chemical vapor deposition equipment, evacuate to a vacuum degree that meets the corresponding process requirements to carry out plasma chemical vapor deposition and grow diamond.
[0068] Post-treatment: After growing diamond on the surface of the above-mentioned substrate, use tweezers to remove the substrate from the molybdenum stage and soak it in absolute ethanol for 10 min, and then ultrasonically clean it for 5 min at no more than 500 W to completely remove the residual gold foil.
[0069] Figure 7 In the case of not adopting the substrate fixing method in the vacuum deposition process according to the embodiment of the present invention, during the process of growing diamond on the Si substrate (substrate) coated with GaN thin film according to the embodiment, the position change photo of the substrate on the carrier stage within 5 min in the vacuum deposition process. Figure 8 In the embodiment, during the process of growing diamond on the Si substrate (substrate) coated with GaN thin film, the position change photo of the substrate on the carrier stage within 60 h in the vacuum deposition process. Figure 7 and Figure 8 The photos in Figure 7 and 8 are directly taken through the observation window of the deposition equipment by a mobile phone. Comparing Figure 7 and 8 it can be seen that when the metal foil 14 is not used for fixing, under the action of the working gas in the deposition equipment, the growth position of the substrate 10 will move to a certain extent within only 5 min, and even move to the edge position of the carrier stage 12; while in the case of adopting the substrate fixing method in the vacuum deposition process according to the embodiment of the present invention, the corresponding position of the substrate 10 does not move during the entire 60 h experiment process, which proves that the substrate fixing method in the vacuum deposition process described in this application can effectively fix the substrate 10 through the metal foil 14.
[0070] Figure 9 It is the Raman characterization result corresponding to the diamond grown on the GaN surface in the embodiment. Figure 9 The characteristic peak at 1131.6 cm -1 in 3 is the Raman characteristic peak originating from the diamond sp 3 3 bond. Although compared with the position of the standard diamond sp 3 bond characteristic peak at 1132.5 cm -1 in the ideal case, there is a small blue shift of this characteristic peak, indicating that there is a very small tensile stress in the grown diamond film. And in this Raman diagram, no sp 2 amorphous carbon in the range of 1350 cm -1 -1600 cm -1 or sp -1Characteristic peaks corresponding to the graphite carbon at [location]. These indicate that the diamond grown in the examples has high quality, and using a gold foil to fix the small-sized substrate does not introduce additional contamination.
[0071] Figure 10 XRD characterization results of the diamond grown on the GaN surface in the examples. From Figure 10 It can be seen that the diamond film grown in the examples has a typical polycrystalline structure, and the growth is mainly on the (111) crystal plane. At the same time, the full-width at half-maximum (FWHM) of the XRD characteristic peaks corresponding to the (111), (220), and (311) crystal planes are 0.168 degrees, 0.225 degrees, and 0.313 degrees respectively. The small FWHM also proves that the grown diamond film has high quality.
[0072] The various specific embodiments described above and shown in the drawings are only for illustrating the present invention and not all of the present invention. Within the scope of the basic technical idea of the present invention, any form of change made by those of ordinary skill in the relevant technical field to the present invention is within the protection scope of the present invention.
Claims
1. A method for fixing a substrate in a vacuum deposition process, the vacuum deposition process being carried out in a deposition apparatus, the deposition apparatus including a stage for placing the substrate, characterized in that, The fixing method includes: Cleaning the substrate and the stage; Placing a metal foil on the stage, where the metal foil remains chemically thermally stable at a temperature of 900 °C; Heating the metal foil to make the metal foil adhere to the stage; and Placing the cleaned substrate on the metal foil adhered to the stage.
2. The fixing method according to claim 1, characterized in that, The substrate includes a base material and a semiconductor thin film plated on the base material, and the base material is made of Si, Al2O3 or SiC.
3. The fixing method according to claim 2, characterized in that, The semiconductor thin film is made of GaN, Ga2O3 or InP.
4. The fixing method according to claim 1, characterized in that, The stage is made of molybdenum, iridium or silicon.
5. The fixing method according to claim 1, characterized in that, The cleaning includes ultrasonically cleaning the substrate and the stage with absolute ethanol at no less than 240 W for 5 min - 8 min respectively, and then continuously rinsing with deionized water for more than 60 s.
6. The fixing method according to claim 5, wherein, The cleaning includes drying the substrate and the stage rinsed with deionized water at a temperature of 60 °C - 70 °C for no more than 12 h.
7. The fixing method according to claim 1, characterized in that The metal foil includes at least one of gold foil and indium foil.
8. The fixing method according to claim 7, wherein, The thickness of the metal foil is less than 0.1 mm.
9. The fixing method according to claim 7, characterized in that, The size of the metal foil is not less than that of the substrate.
10. The fixing method according to claim 1, characterized in that, Heating the metal foil includes blowing hot air over the metal foil on the stage until the metal foil lies flat on the stage.
11. The fixing method according to claim 10, characterized in that, Heating the metal foil includes slowly flattening the metal foil with a hot air gun.
12. The fixing method according to claim 11, characterized in that, Heating the metal foil includes placing the hot air gun 50 cm - 70 cm directly above the metal foil and continuously blowing at a power of 100 W or less for no more than 5 min directly facing the metal foil.
13. The fixing method according to claim 10, characterized in that, Heating the metal foil includes clamping and laying flat the metal foil with tweezers.
14. The fixing method according to claim 1, wherein Placing the cleaned substrate on the metal foil adhered to the stage includes placing the cleaned substrate on the metal foil lying flat on the stage and pressing the substrate with a pressure within 100 kPa.