Optical chip, optical chip manufacturing method and laser radar
By using stacked wrapping layers and substrate layers in the optical chip, the antenna array and the phase shifter array are arranged consistently, the problem of excessive optical chip size is solved, miniaturization of optical chips and spatial optimization of lidars is achieved, and the cost is reduced.
Patent Information
- Application Number
- CN202311866641.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-12-28
- Publication Date
- 2025-07-01
AI Technical Summary
The size of existing optical chips is difficult to further reduce, resulting in a larger overall chip length, limiting the development of chip miniaturization and the internal space design of lidar, and increasing costs.
The optical chip adopts a laminated wrapping layer and substrate layer. The antenna array and the phase shifter array are arranged consistently in the lamination direction. The optical coupling structure, the optical beam splitting structure and the phase shifter array are arranged in sequence. The antenna array does not occupy the size of the optical chip in this order direction. The laminated structure of the antenna array and the phase shifter array is formed through the etching and deposition process.
The overall size of the optical chip is reduced, the overall volume and manufacturing cost of the lidar are reduced, and the chip output of a single wafer is improved.
Smart Images
Figure CN120233603A_ABST
Abstract
Description
Technical Field
[0001] This application belongs to the technical field of chip manufacturing. More specifically, it relates to an optical chip, a method for manufacturing an optical chip, and a lidar. Background Art
[0002] Generally, in a phased array chip, an optical coupling structure, an optical beam splitting structure, a phase shifter array, and an antenna array are provided in a semiconductor layer arranged along the length direction of the chip. The phase shifter array extends along the length direction of the chip by a certain size, and the antenna array extends along the length direction of the chip by a certain length.
[0003] Since the phase shifter array and the antenna array are arranged in sequence along the length direction of the chip, the extension size of the phase shifter array needs to occupy a certain proportion of the total length size of the chip, and the extension size of the antenna array needs to occupy a certain proportion of the total length size of the chip. Therefore, the total length size of the chip is relatively large, that is, the overall size of the chip is relatively large, which is not conducive to the miniaturization development of the chip, and limits the chip yield of a single wafer, and further makes it difficult to further reduce the cost of a single chip.
[0004] When applying the phased array chip to a phased array lidar, the chip needs to occupy a relatively large space in the lidar, which is not conducive to the internal space design of the lidar, or causes the overall volume of the lidar to increase, and makes it difficult to further reduce the cost of the lidar. Summary of the Invention
[0005] The purpose of the embodiments of this application is to provide an optical chip, a method for manufacturing an optical chip, and a lidar, so as to solve the technical problem that the size of the existing optical chip is difficult to be further reduced.
[0006] To achieve the above purpose, the technical solution adopted in this application is as follows:
[0007] Provide an optical chip, which includes a wrapping layer and a substrate layer arranged in a stacked manner, and an optical coupling structure, an optical beam splitting structure, a phase shifter array, and an antenna array all arranged in the wrapping layer;
[0008] The optical coupling structure, the optical beam splitting structure, and the phase shifter array are arranged in sequence along the light transmission direction, the antenna array and the phase shifter array are arranged in a stacked manner, and the stacking direction of the antenna array and the phase shifter array is the same as the stacking direction of the wrapping layer and the substrate layer.
[0009] In some embodiments, the antenna array is arranged on a side of the phase shifter array away from the substrate layer.
[0010] In some embodiments, the antenna array is arranged between the phase shifter array and the substrate layer.
[0011] In some embodiments, the optical chip includes two of the antenna arrays, and the two antenna arrays are arranged in sequence along the stacking direction.
[0012] In some embodiments, the projection of the antenna array along the stacking direction is located inside the boundary of the phase shifter array or flush with the boundary of the phase shifter array.
[0013] In some embodiments, the antenna array includes a plurality of antenna elements arranged in an array, and the phase shifter array includes a plurality of phase shifters arranged in an array; the antenna elements and the phase shifters are arranged one-to-one along the stacking direction, and the projection of the antenna element along the stacking direction is located inside the boundary of the phase shifter or flush with the boundary of the phase shifter.
[0014] In some embodiments, the antenna element has a length dimension along the transmission direction, and the arrangement directions of the plurality of antenna elements are perpendicular to the transmission direction; the phase shifter has a length dimension along the transmission direction, and the arrangement directions of the plurality of phase shifters are perpendicular to the transmission direction;
[0015] wherein, the length dimension of the phase shifter is greater than or equal to the length dimension of the antenna element.
[0016] In some embodiments, the antenna array and the phase shifter array are arranged at intervals along the stacking direction.
[0017] In some embodiments, the distance between the antenna array and the phase shifter array in the stacking direction is between 50 nm and 300 nm.
[0018] In some embodiments, the antenna array includes a plurality of antenna elements arranged in an array, and the distance between the antenna array and the phase shifter array in the stacking direction is positively correlated with the length of the antenna element.
[0019] In some embodiments, the size between the two farthest ends of the optical coupler and the phase shifter array along the transmission direction is less than or equal to half of the sum of the size between the two farthest ends of the optical coupler and the phase shifter array along the transmission direction and the size of the antenna array along the transmission direction.
[0020] In some embodiments, the encapsulation layer includes a first encapsulation layer, a top silicon layer, and a second encapsulation layer which are stacked, and the first encapsulation layer and the substrate layer are stacked;
[0021] The optical coupler, the optical splitter, and the phase shifter array are formed on the top silicon layer, and the antenna array is disposed in the first encapsulation layer or the second encapsulation layer.
[0022] The beneficial effects of the optical chip provided by this application are as follows:
[0023] Compared with the prior art, for the optical chip provided by the present application, the antenna array and the phase shifter array are stacked, and the stacking direction of the antenna array and the phase shifter array is the same as the stacking direction of the encapsulation layer and the substrate layer. In the direction of the order setting of the optical coupling structure, the optical beam splitting structure, and the phase shifter array, the antenna array does not occupy any size. Therefore, the size of the optical chip in the direction of this order setting is reduced by the size occupied by the antenna array, and the size of the optical chip in the direction of this order setting is decreased. Since the stacking of the antenna array and the phase shifter array does not increase the size of the optical chip in the stacking direction, the overall size of the optical chip is reduced.
[0024] Another object of the present application is to provide a lidar, which includes the optical chip as described above.
[0025] The lidar provided by the present application uses the optical chip provided by the present application. Since the overall size of the optical chip provided by the present application is reduced, the space occupied by the chip in the lidar is smaller, which is beneficial to the internal space design of the lidar, or is beneficial to reducing the overall volume of the lidar, and can increase the chip yield of a single wafer, thereby reducing the manufacturing cost of a single chip, and thus reducing the manufacturing cost of the lidar.
[0026] Another object of the present application is to provide a method for manufacturing an optical chip, and the manufacturing method includes:
[0027] Providing an SOI substrate, etching an optical coupling structure, an optical beam splitting structure, and a phase shifter array in the top silicon layer of the SOI substrate, and arranging the optical coupling structure, the optical beam splitting structure, and the phase shifter array in order along the light transmission direction;
[0028] Depositing a silicon dioxide layer to cover the optical coupling structure, the optical beam splitting structure, and the phase shifter array;
[0029] Depositing a silicon nitride layer to cover the silicon dioxide layer, etching the silicon nitride layer to form a silicon nitride antenna array, and making the antenna array opposite to the phase shifter array in the stacking direction;
[0030] Wherein, the SOI substrate includes a substrate layer, a buried oxide layer, and a top silicon layer that are stacked, and the buried oxide layer, the top silicon layer, the silicon dioxide layer, and the silicon nitride layer form an encapsulation layer.
[0031] In some embodiments, the manufacturing method further includes:
[0032] Depositing a silicon dioxide layer again to cover the antenna array;
[0033] A silicon nitride layer is deposited again to cover the re-deposited silicon dioxide layer, the re-deposited silicon nitride layer is etched to form a silicon nitride antenna array, and the antenna array and the phase shifter array are made to face each other along the stacking direction to obtain a double-layer antenna array.
[0034] In some embodiments, the manufacturing method further comprises:
[0035] preparing another substrate layer on a side of the wrapping layer facing away from the substrate layer;
[0036] removing a portion of material on the other substrate layer that is directly opposite to the antenna array;
[0037] The original substrate layer is completely removed.
[0038] The beneficial effects of the optical chip manufacturing method provided in this application are:
[0039] Compared with the prior art, the optical chip manufacturing method provided by the present application makes the positions of the antenna array and the phase shifter array face each other along the stacking direction, so that in the direction in which the optical coupling structure, the optical beam splitting structure and the phase shifter array are sequentially arranged, the antenna array does not occupy any size, so the size of the optical chip in the direction in which the sequence is arranged is less than the size occupied by the antenna array, and the size of the optical chip in the direction in which the sequence is arranged is reduced. Since the stacking of the antenna array and the phase shifter array does not increase the size of the optical chip along the stacking direction, the overall size of the optical chip is reduced. BRIEF DESCRIPTION OF THE DRAWINGS
[0040] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.
[0041] Figure 1 It is a cross-sectional view of an existing optical chip along the stacking direction;
[0042] Figure 2 A cross-sectional view of an optical chip provided in an embodiment of the present application along a stacking direction;
[0043] Figure 3 A cross-sectional view of an optical chip provided in another embodiment of the present application along the stacking direction;
[0044] Figure 4 A cross-sectional view of an optical chip along a stacking direction provided in yet another embodiment of the present application;
[0045] Figure 5 A cross-sectional view of an optical chip along a stacking direction provided in yet another embodiment of the present application;
[0046] Figure 6 Flow chart of the optical chip manufacturing method provided by an embodiment of the present application;
[0047] Figure 7 Flow chart of the optical chip manufacturing method provided by another embodiment of the present application;
[0048] Figure 8 Flow chart of the optical chip manufacturing method provided by still another embodiment of the present application.
[0049] Wherein, each reference numeral in the figure:
[0050] 100, optical chip;
[0051] 101, substrate layer; 102, encapsulation layer; 103, optical coupling structure; 104, optical beam splitting structure; 105, phase shifter array; 106, antenna array;
[0052] 1021, first encapsulation layer; 1022, top silicon layer; 1023, second encapsulation layer. Detailed implementation manners
[0053] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present application clearer and more understandable, the present application will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.
[0054] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.
[0055] It should be understood that the orientation or positional relationship indicated by the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present application.
[0056] In addition, the terms "first" and "second" are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of this application, "a plurality" means two or more, unless otherwise specifically defined.
[0057] Now, the optical chip 100, the method for manufacturing the optical chip 100, and the lidar provided in the embodiments of this application will be described.
[0058] Please refer to Figures 2 to 5 As shown, the optical chip 100 provided in the embodiments of this application includes a wrapping layer 102 and a substrate layer 101 arranged in a stacked manner, and an optical coupling structure 103, an optical beam splitting structure 104, a phase shifter array 105, and an antenna array 106, all of which are disposed in the wrapping layer 102. The optical coupling structure 103, the optical beam splitting structure 104, and the phase shifter array 105 are arranged in sequence along the light transmission direction. The antenna array 106 and the phase shifter array 105 are arranged in a stacked manner, and the stacking direction of the antenna array 106 and the phase shifter array 105 is the same as the stacking direction of the wrapping layer 102 and the substrate layer 101.
[0059] The substrate layer 101 generally refers to the silicon substrate layer 101, and its materials include but are not limited to silicon, silicon carbide, silicon nitride, etc.
[0060] The wrapping layer 102 generally refers to a layer structure provided with the optical coupling structure 103, the optical beam splitting structure 104, the phase shifter array 105, and the antenna array 106, which can be a single-layer structure or a multi-layer structure stacked. Among them, the wrapping layer 102 is insulated from the substrate layer 101. Among them, the material of the wrapping layer 102 includes but is not limited to being selected from silicon oxide or benzocyclobutene. When the wrapping layer 102 includes a multi-layer structure, the materials of the multi-layer structure can be the same or different.
[0061] It should be noted that in the wrapping layer 102, the layer formed by or where the optical coupling structure 103, the optical beam splitting structure 104, and the phase shifter array 105 are located can be called the top silicon layer 1022 or the waveguide layer. In the embodiments of this application, the wrapping layer 102 contains the top silicon layer 1022 or the waveguide layer, and the specific structure of the top silicon layer 1022 or the waveguide layer is a known technology to those skilled in the art, and the embodiments of this application will not describe it in detail.
[0062] The optical chip 100 provided by the embodiment of the present application, in which the antenna array 106 and the phase shifter array 105 are stacked, and the stacking direction of the antenna array 106 and the phase shifter array 105 is the same as the stacking direction of the encapsulation layer 102 and the substrate layer 101. In the direction where the optical coupling structure 103, the optical beam splitting structure 104, and the phase shifter array 105 are arranged in sequence, the antenna array 106 does not occupy any size. Therefore, the size of the optical chip 100 in this direction of sequential arrangement is reduced by the size occupied by the antenna array 106, and the size of the optical chip 100 in this direction of sequential arrangement is decreased. Since the stacking of the antenna array 106 and the phase shifter array 105 does not increase the size of the optical chip 100 in the stacking direction, the overall size of the optical chip 100 is reduced.
[0063] In addition, as Figure 1 shown, in the view of the existing optical chip, the optical coupling structure 103′, the optical beam splitting structure 104′, the phase shifter array 105′, and the antenna array 106′ are arranged in sequence along the length direction of the optical chip, and the side parts of the phase shifter array 105′ and the antenna array 106′ that are close to each other are flush. Since the maximum length dimension of the optical chip is limited, the space between the side parts of the phase shifter array 105′ in the length direction of the optical chip close to it is limited, that is, the length dimension for accommodating the antenna array 106′ is limited. Then, the length dimension of the antenna element is a limiting factor, affecting the optional value range of the length of the antenna element, which is not conducive to the transceiver efficiency of the optical chip.
[0064] However, for the optical chip 100 provided by the embodiment of the present application, since the optical chip 100 reduces the size of the antenna array 106 in the direction where the optical coupling structure 103, the optical beam splitting structure 104, and the phase shifter array 105 are arranged in sequence, the size in this direction is significantly reduced. When the antenna array 106 and the phase shifter array 105 are stacked, even if the size of the antenna array 106 and / or the phase shifter array 105 increases, compared with Figure 1 the optical chip 100 shown, the size of the optical chip 100 in the embodiment of the present application is still reduced.
[0065] Specifically, referring to Figure 2 shown, in some embodiments, the antenna array 106 is disposed on the side of the phase shifter array 105 away from the substrate layer 101. Referring to Figure 3 shown, in some embodiments, the antenna array 106 is disposed between the phase shifter array 105 and the substrate layer 101. Referring to Figure 4 and Figure 5 shown, in some embodiments, the optical chip includes two antenna arrays 106, and the two antenna arrays 106 are arranged in sequence along the stacking direction.
[0066] In some embodiments, whether the antenna array 106 is disposed on the side of the phase shifter array 105 away from the substrate layer 101 or the antenna array 106 is disposed between the phase shifter array 105 and the substrate layer 101, the projection of the antenna array 106 in the stacking direction is located inside the boundary of the phase shifter array 105 or flush with the boundary of the phase shifter array 105.
[0067] Further, preferably, the projection of the antenna array 106 in the stacking direction is located inside the boundary of the phase shifter array 105, and the antenna array 106 and the phase shifter array 105 are coaxially arranged to facilitate the most efficient use of the area of the antenna array 106 to receive the transmitted light passing through the phase shifter array 105.
[0068] In other embodiments, the projection of the antenna array 106 in the stacking direction may also be located outside the boundary of the phase shifter array 105.
[0069] In some embodiments, the antenna array 106 includes a plurality of antenna elements arranged in an array, and the phase shifter array 105 includes a plurality of phase shifters arranged in an array. The antenna elements and the phase shifters are arranged one-to-one in the stacking direction, and the projection of the antenna element in the stacking direction is located inside the boundary of the phase shifter or flush with the boundary of the phase shifter.
[0070] By making the number of antenna elements and phase shifters the same, the transmitted light received by each antenna element passing through the corresponding phase shifter can be more precisely controlled, which is beneficial to the most efficient use of each antenna element to emit light to the object to be monitored.
[0071] In other embodiments, the number of antenna elements and the number of phase shifters may also be different.
[0072] In some embodiments, the antenna element has a length dimension in the transmission direction, and the arrangement direction of the plurality of antenna elements is perpendicular to the light transmission direction. The phase shifter has a length dimension in the transmission direction, and the arrangement direction of the plurality of phase shifters is perpendicular to the light transmission direction. Among them, the length dimension of the phase shifter is greater than or equal to the length dimension of the antenna element.
[0073] The optical chip 100 reduces the length dimension of the antenna element in the direction in which the optical coupling structure 103, the optical beam splitting structure 104, and the phase shifter array 105 are arranged in sequence, so that the size of the optical chip 100 in this direction is greatly reduced. Among them, the direction in which the optical coupling structure 103, the optical beam splitting structure 104, and the phase shifter array 105 are arranged in sequence may be the length direction of the optical chip 100 or the width direction of the optical chip 100. Preferably, the direction in which the optical coupling structure 103, the optical beam splitting structure 104, and the phase shifter array 105 are arranged in sequence is the length direction of the optical chip 100.
[0074] In some other alternative embodiments, for example, the direction in which the optical coupling structure 103, the optical beam splitting structure 104, and the phase shifter array 105 are arranged in sequence is the length direction of the optical chip 100. The length direction of the antenna unit is perpendicular to the length direction of the optical chip 100, and the length direction of the phase shifter array 105 is perpendicular to the length direction of the optical chip 100. At this time, the width dimension of the optical chip 100 is reduced. In specific design, the transmission direction of light is turned between the optical beam splitting structure 104 and the phase shifter array 105. For example, the transmission direction of light is changed through an optical beam splitting channel with a chamfer. In this case, since the antenna array 106 and the phase shifter array 105 are stacked, the dimension of the optical chip 100 in the width direction is reduced, and the total dimension of the optical chip 100 is also reduced.
[0075] In some embodiments, since the distance between the antenna array 106 and the phase shifter array 105 is positively correlated with the length of the antenna unit, the antenna array 106 and the phase shifter array 105 are arranged at intervals along the above-mentioned stacking direction, and the distance of this interval can be adaptively set according to the specific length of the antenna unit. For example, the distance between the antenna array 106 and the phase shifter array 105 is between 50 nm and 300 nm, which is adapted to the length range of the antenna unit between 2 mm and 10 mm.
[0076] In some embodiments, the dimension between the two farthest ends of the optical coupler and the phase shifter array 105 along the optical transmission direction is equal to half of the sum of the dimension between the two farthest ends of the optical coupler and the phase shifter array 105 along the transmission direction and the dimension of the antenna array 106 along the optical transmission direction. In this way, two optical chips 100 provided by the embodiments of the present application can be arranged on the existing dimension.
[0077] In some embodiments, the encapsulation layer 102 includes a first encapsulation layer 1021, a top silicon layer 1022, and a second encapsulation layer 1023 that are stacked. The first encapsulation layer 1021 and the substrate layer 101 are stacked. The optical coupler, the optical beam splitter, and the phase shifter array 105 are formed on the top silicon layer 1022, and the antenna array 106 is arranged in the first encapsulation layer 1021 or the second encapsulation layer 1023.
[0078] In this way, two ways of arranging the antenna array 106 are provided, and specific selection can be made according to the requirements of the optical chip 100. Of course, the encapsulation layer 102 can also be a single-layer structure. Among them, the material of the cladding layer includes but is not limited to silicon oxide or benzocyclobutene, and the materials of the first cladding layer and the second cladding layer can be the same or different.
[0079] Another object of the embodiments of the present application is also to provide a lidar, which includes the optical chip 100 as described above.
[0080] The laser radar provided in the embodiment of the present application is applied with the optical chip 100 provided in the present application. Since the overall size of the optical chip 100 provided in the present application is reduced, the chip needs to occupy a smaller space of the laser radar, which is beneficial to the internal space design of the laser radar, or beneficial to reducing the overall volume of the laser radar.
[0081] Reference Figure 6 As shown, another object of the embodiment of the present application is to provide a method for manufacturing an optical chip, the manufacturing method comprising:
[0082] 1001. Provide an SOI substrate, etch a light coupling structure, a light splitting structure and a phase shifter array in a top silicon layer of the SOI substrate, and arrange the light coupling structure, the light splitting structure and the phase shifter array in sequence along a transmission direction of light.
[0083] 1002. Deposit a silicon dioxide layer to cover the optical coupling structure, the optical beam splitting structure and the phase shifter array.
[0084] 1003. Deposit a silicon nitride layer and cover it with the silicon dioxide layer, etch the silicon nitride layer to form a silicon nitride antenna array, and make the antenna array and the phase shifter array face each other along the stacking direction.
[0085] The SOI substrate includes a stacked substrate layer, a buried oxide layer and a top silicon layer, and the buried oxide layer, the top silicon layer, the silicon dioxide layer and the silicon nitride layer form a wrapping layer.
[0086] Through the above steps 1001 to 1003, a silicon dioxide layer is deposited on the silicon nitride layer etched with the antenna array to form protection and packaging, and the optical chip obtained is as follows Figure 2 The optical chip shown.
[0087] It should be noted that in the process of manufacturing optical chips, the SOI substrate can be prepared by known technology, and the SOI substrate can include a stacked substrate layer, a buried oxide layer and a top silicon layer. In the layer structure of the optical chip provided in the embodiment of the present application, for the sake of concise description, the buried oxide layer and the top silicon layer on the known SOI substrate are confined to the wrapping layer to facilitate the description that antenna arrays can be formed in the wrapping layers on both sides of the phase shifter array along the stacking direction.
[0088] Except for the top silicon layer where the optical coupling structure, the optical beam splitting structure and the phase shifter array are located, and the silicon nitride layer where the antenna array is located, the materials of other parts of the encapsulation layer can be the same, for example, silicon dioxide can be used.
[0089] Reference Figure 7 As shown, the method for manufacturing the optical chip further includes:
[0090] 1004. Prepare another substrate layer on the side of the wrapping layer facing away from the substrate layer.
[0091] 1005. Remove part of the material on another substrate layer that is directly opposite to the antenna array.
[0092] 1006. Completely remove the original substrate layer.
[0093] Through the fabrication of the above steps 1004 to 1006, the obtained optical chip is the optical chip as Figure 3 shown.
[0094] It should be noted that there is no strict sequence between step 1005 and step 1006, but the sequence of step 1004 and step 1005 is to perform step 1004 first and then step 1005, and the sequence of step 1004 and step 1006 is to perform step 1004 first and then step 1006.
[0095] Referring to Figure 8 shown, the above method for fabricating an optical chip further includes:
[0096] 1007. Deposit a silicon dioxide layer again and make it cover the antenna array.
[0097] 1008. Deposit a silicon nitride layer again and make it cover the re-deposited silicon dioxide layer. Etch the re-deposited silicon nitride layer to form a silicon nitride antenna array, and make the antenna array opposite to the phase shifter array in the stacking direction to obtain a double-layer antenna array.
[0098] Through the fabrication of the above steps 1001 to 1003 and the above steps 1007 to 1008, the obtained optical chip is the optical chip as Figure 4 shown.
[0099] Through the fabrication of the above steps 1001 to 1003 and the above steps 1007 to 1008, and then through the above steps 1004 to 1006, the obtained optical chip is the optical chip as Figure 5 shown.
[0100] In some embodiments, removing part of the material on another substrate layer that is directly opposite to the antenna array includes, but is not limited to, removing part of the layer material of another substrate layer by any one of deep silicon etching process, plasma etching process, and wet etching dicing process.
[0101] The optical chip manufacturing method provided by the embodiments of the present application makes the positions of the antenna array and the phase shifter array face each other along the stacking direction. In this way, in the direction where the optical coupling structure, the optical beam splitting structure, and the phase shifter array are arranged in sequence, the antenna array does not occupy any size. Therefore, the size of the optical chip in the direction of this sequence setting is reduced by the size occupied by the antenna array, and the size of the optical chip in the direction of this sequence setting is decreased. Since the antenna array and the phase shifter array are stacked and do not increase the size of the optical chip along the stacking direction, the overall size of the optical chip is reduced.
[0102] The above are only the preferred embodiments of the present application and are not intended to limit the present application. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims
1. An optical chip, characterized in that: The optical chip includes a stacked wrapping layer and a substrate layer, and an optical coupling structure, an optical beam splitting structure, a phase shifter array and an antenna array, all of which are arranged in the wrapping layer; The optical coupling structure, the optical beam splitting structure and the phase shifter array are arranged in sequence along the transmission direction of the light, the antenna array and the phase shifter array are stacked, and the stacking direction of the antenna array and the phase shifter array is consistent with the stacking direction of the wrapping layer and the substrate layer.
2. The optical chip according to claim 1, wherein: The antenna array is arranged on a side of the phase shifter array away from the substrate layer.
3. The optical chip according to claim 1, wherein: The antenna array is disposed between the phase shifter array and the substrate layer.
4. The optical chip according to any one of claims 1 to 3, characterized in that: The optical chip includes two antenna arrays, and the two antenna arrays are sequentially arranged along the stacking direction.
5. The optical chip according to any one of claims 1 to 3, characterized in that: The projection of the antenna array along the stacking direction is located inside the boundary of the phase shifter array or is flush with the boundary of the phase shifter array.
6. The optical chip according to claim 5, characterized in that: The antenna array includes a plurality of antenna units arranged in an array, and the phase shifter array includes a plurality of phase shifters arranged in an array; the antenna units and the phase shifters are arranged one-to-one along the stacking direction, and the projection of the antenna units along the stacking direction is located inside the boundary of the phase shifter or flush with the boundary of the phase shifter.
7. The optical chip according to claim 6, wherein: The antenna monomer has a length dimension along the transmission direction, and the arrangement direction of the plurality of antenna monomers is perpendicular to the transmission direction; the phase shifter has a length dimension along the transmission direction, and the arrangement direction of the plurality of phase shifters is perpendicular to the transmission direction; Wherein, the length dimension of the phase shifter is greater than or equal to the length dimension of the antenna unit.
8. The optical chip according to any one of claims 1 to 3, characterized in that: The antenna array and the phase shifter array are arranged at intervals along the stacking direction.
9. The optical chip according to claim 8, wherein: The distance between the antenna array and the phase shifter array in the stacking direction is between 50 nm and 300 nm.
10. The optical chip according to claim 8, wherein: The antenna array includes a plurality of antenna units arranged in an array, and a spacing between the antenna array and the phase shifter array in the stacking direction is positively correlated with a length of the antenna unit.
11. The optical chip according to any one of claims 1 to 3, characterized in that: The dimension between the two farthest ends of the optical coupler and the phase shifter array along the transmission direction is less than or equal to half of the sum of the dimension between the two farthest ends of the optical coupler and the phase shifter array along the transmission direction and the dimension of the antenna array along the transmission direction.
12. A laser radar, characterized in that: The lidar includes an optical chip as described in any one of claims 1-11.
13. A method for fabricating an optical chip, characterized in that: The fabrication method includes: providing an SOI substrate, etching an optical coupling structure, an optical beam splitting structure, and a phase shifter array in the top silicon layer of the SOI substrate, and arranging the optical coupling structure, the optical beam splitting structure, and the phase shifter array in sequence along the light transmission direction; depositing a silicon dioxide layer to cover the optical coupling structure, the optical beam splitting structure, and the phase shifter array; depositing a silicon nitride layer to cover the silicon dioxide layer, etching the silicon nitride layer to form a silicon nitride antenna array, and making the antenna array opposite to the phase shifter array in the stacking direction; wherein the SOI substrate includes a stacked substrate layer, a buried oxide layer, and a top silicon layer, and the buried oxide layer, the top silicon layer, the silicon dioxide layer, and the silicon nitride layer form a wrapping layer.
14. The method for fabricating an optical chip as described in claim 13, characterized in that: The fabrication method further includes: depositing a silicon dioxide layer again to cover the antenna array; depositing a silicon nitride layer again to cover the silicon dioxide layer deposited again, etching the silicon nitride layer deposited again to form a silicon nitride antenna array, and making the antenna array opposite to the phase shifter array in the stacking direction to obtain a double-layer antenna array.
15. The method for fabricating an optical chip as described in claim 13, characterized in that: The fabrication method further includes: preparing another substrate layer on a side of the wrapping layer away from the substrate layer; removing a part of the material on the another substrate layer opposite to the antenna array; completely removing the original substrate layer.
16. The method for fabricating an optical chip as described in claim 15, characterized in that: The removing a part of the material on the another substrate layer opposite to the antenna array includes: removing a part of the layer material of the another substrate layer by any one of a deep silicon etching process, a plasma etching process, and a wet etching dicing process.