Multilayer capacitor

Abstract

The present disclosure provides a multilayer capacitor. The multilayer capacitor according to the present disclosure includes: a capacitor body including a dielectric layer and an inner electrode; and an outer electrode disposed on an outer surface of the capacitor body, in which the inner electrode includes a compound represented by Chemical Formula 1 (Mn + 1Xn), where in Chemical Formula 1, M includes at least one selected from the group consisting of Ti, Zr, Hf, Sc, Cr, V, Nb, Ta, Mo, Mn, W, and Y, X includes C, N, or a combination thereof, and 1 < = n < = 2.

Description

Technical Field

[0001] The present disclosure relates to a multilayer capacitor. Background Art

[0002] Recently, with the rapid development of the multifunctionalization and miniaturization of electronic devices, the miniaturization and performance improvement of electronic components have also been rapidly developing. In addition, the demand for high reliability of electrical devices for automobiles, network devices, etc., and electronic components for industry has also increased significantly.

[0003] To meet these market demands, the competition in the technical development of passive components such as inductors, capacitors, or resistors has been accelerating. In particular, the applications and uses of multilayer ceramic capacitors (MLCCs), which are passive components, have been continuously increasing. Therefore, a great deal of effort is required to capture the market by developing various multilayer ceramic capacitor (MLCC) products.

[0004] In addition, multilayer capacitors are manufactured by stacking dielectric layers and internal electrodes, and multilayer capacitors are used in various electronic devices such as mobile phones, laptop computers, and liquid crystal display televisions (LCD TVs).

[0005] With recent technological advancements, multilayer capacitors are required to be miniaturized and have high capacitance, and for this purpose, thinning of the internal electrodes is known to be crucial.

[0006] However, it is well known that the thinner the internal electrode, the lower the electrode connectivity, which causes a decrease in capacitance, withstand voltage characteristics, and reliability. Summary of the Invention

[0007] One aspect of the embodiments provides a multilayer capacitor that can achieve thinning of the internal electrode and has improved electrical characteristics.

[0008] However, the problems that the embodiments attempt to solve are not limited to the above problems and can be extended in various ways within the scope of the technical idea included in the embodiments.

[0009] The multilayer capacitor according to an embodiment includes: a capacitor body including a dielectric layer and an internal electrode; and an external electrode located on an outer surface of the capacitor body, wherein the internal electrode includes a compound represented by Chemical Formula 1.

[0010] [Chemical Formula 1] M n+1 X n In Chemical Formula 1, M includes at least one selected from the group consisting of Ti, Zr, Hf, Sc, Cr, V, Nb, Ta, Mo, Mn, W, and Y, X includes C, N, or a combination thereof, and 1 ≤ n ≤ 2.

[0011] The compound represented by the chemical formula 1 may include at least one selected from the group consisting of Ti2C, V2C, Nb2C, Mo2C, Mo2N, Ti2N, (Ti 2- y Nb y )C (0 < y < 2), (V 2-y Nb y )C (0 < y < 2), (Ti 2-y V y )C (0 < y < 2), and Mo 1.33 Y 0.67 C.

[0012] The compound represented by the chemical formula 1 may be a plate-like unit MXene layer, and the inner electrode may include an MXene laminate in which one or more layers of unit MXene layers are stacked.

[0013] The inner electrode may include the MXene laminate in which 1 to 500 layers of unit MXene layers are stacked.

[0014] The average thickness of the inner electrode may be about 0.002 μm to about 0.7 μm.

[0015] The average thickness of the dielectric layer may be about 0.5 μm to about 3.0 μm.

[0016] The dielectric layer may include a barium titanate-based compound as a main component, and the barium titanate-based compound may include at least one selected from the group consisting of Ba m TiO3 (0.995 ≤ m ≤ 1.010), (Ba 1-x Ca x ) m (Ti 1-y Zr y )O3 (0.995 ≤ m ≤ 1.010, 0 ≤ x ≤ 0.10, 0 < y ≤ 0.20), Ba m (Ti 1-x Zr x )O3 (0.995 ≤ m ≤ 1.010, 0 < x ≤ 0.10), and (Ba 1-x Ca x ) m (Ti 1-y Sn y )O3 (0.995 ≤ m ≤ 1.010, 0 ≤ x ≤ 0.10, 0 < y ≤ 0.20).

[0017] The dielectric layer may further include a secondary component, and the secondary component may include at least one selected from the group consisting of dysprosium (Dy), vanadium (V), manganese (Mn), chromium (Cr), silicon (Si), aluminum (Al), magnesium (Mg), tin (Sn), antimony (Sb), germanium (Ge), gallium (Ga), barium (Ba), lanthanum (La), yttrium (Y), actinium (Ac), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), hafnium (Hf), and indium (In).

[0018] A multilayer capacitor according to another embodiment includes: a capacitor body including a dielectric layer and an internal electrode; and an external electrode provided on an outer surface of the capacitor body, wherein the internal electrode may include a compound represented by Chemical Formula 1, and an average thickness of the internal electrode is about 0.002 μm to about 2.5 μm.

[0019] [Chemical Formula 1] M n+1 X n In Chemical Formula 1, M includes at least one selected from the group consisting of Ti, Zr, Hf, Sc, Cr, V, Nb, Ta, Mo, Mn, W, and Y, X includes C, N, or a combination thereof, and 1 ≤ n ≤ 2.

[0020] The compound represented by Chemical Formula 1 may include at least one selected from the group consisting of Ti2C, V2C, Nb2C, Mo2C, Mo2N, Ti2N, (Ti 2- y Nb y )C (0 < y < 2), (V 2-y Nb y )C (0 < y < 2), (Ti 2-y V y )C (0 < y < 2), and Mo 1.33 Y 0.67 C.

[0021] The compound represented by Chemical Formula 1 may be a plate-like unit MXene layer, and the internal electrode may include an MXene laminate in which one or more layers of unit MXene layers are stacked.

[0022] The internal electrode may include the MXene laminate in which 1 layer to 500 layers of unit MXene layers are stacked.

[0023] An average thickness of the dielectric layer may be about 0.5 μm to about 3.0 μm.

[0024] The dielectric layer may include a barium titanate-based compound as a main component, and the barium titanate-based compound may include at least one selected from the group consisting of Ba m TiO3 (0.995 ≤ m ≤ 1.010), (Ba 1-x Ca x ) m (Ti 1-y Zr y )O3 (0.995 ≤ m ≤ 1.010, 0 ≤ x ≤ 0.10, 0 < y ≤ 0.20), Ba m (Ti 1-x Zr x )O3 (0.995 ≤ m ≤ 1.010, 0 < x ≤ 0.10), and (Ba 1-x Ca x ) m (Ti 1-y Sn y )O3 (0.995 ≤ m ≤ 1.010, 0 ≤ x ≤ 0.10, 0 < y ≤ 0.20).

[0025] The dielectric layer may further include a sub-component, and the sub-component may include at least one selected from the group consisting of dysprosium (Dy), vanadium (V), manganese (Mn), chromium (Cr), silicon (Si), aluminum (Al), magnesium (Mg), tin (Sn), antimony (Sb), germanium (Ge), gallium (Ga), barium (Ba), lanthanum (La), yttrium (Y), actinium (Ac), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), hafnium (Hf), and indium (In).

[0026] The multilayer capacitor according to the embodiment may have the following advantages: a thinner inner electrode can be obtained and the electrical characteristics can be improved.

[0027] However, the various beneficial advantages and effects of the present disclosure are not limited to the above description and can be more easily understood during the process of explaining the specific embodiments of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 is a perspective view showing a multilayer capacitor according to an embodiment.

[0029] Figure 2 is a cross-sectional view of the multilayer capacitor taken along the line I-I' of Figure 1 .

[0030] Figure 3 is a perspective exploded view showing the stacked structure of the capacitor body of Figure 1 .

[0031] Figure 4 It is a schematic diagram showing a part of the cross-section of a multilayer capacitor according to an embodiment.

[0032] Figure 5 It is a graph evaluating the impedance of the multilayer capacitors according to Example 1 and Comparative Example 1. Detailed Description

[0033] Hereinafter, exemplary embodiments of the present disclosure will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily implement them. The drawings and the description are considered to be illustrative rather than restrictive in nature. Throughout the specification, the same reference numerals denote the same elements. In addition, the drawings are provided to facilitate an easy understanding of the exemplary embodiments disclosed in this specification, and the technical spirit disclosed in this specification is not limited by the drawings, and it should be understood that the present disclosure includes all variations, equivalents, and alternatives within the spirit and scope of the present disclosure.

[0034] Terms including ordinal numbers (such as "first" and "second") are used to describe various components, but the components are not limited by the terms. The terms are only used to distinguish one component from another component.

[0035] When a component is referred to as being "connected" or "coupled" to another component, it should be understood that the component can be directly connected or coupled to the other component, or there may be other components in between. In contrast, when a component is referred to as being "directly connected" or "directly coupled" to another component, it should be understood that there are no other components in between.

[0036] In this specification, it should be understood that the terms "comprising" and "having" are intended to indicate the presence of the features, numbers, steps, operations, components, assemblies, or combinations thereof described in the specification, and do not exclude the possibility of the pre-existence or addition of one or more other features, numbers, steps, operations, components, assemblies, or combinations thereof. Therefore, unless explicitly described to the contrary, the words "comprising" and variations such as "including" or "having" will be understood to imply including the stated elements but not excluding any other elements.

[0037] As used herein, the term "about" means approximate. Generally, the term "about" is used herein to adjust a numerical value within a variation range of 10% above and below the stated value. In one aspect, the term "about" means plus or minus 20% of the numerical value used.

[0038] In the present disclosure, "main component" means that the amount (content) of the barium titanate-based compound based on the total amount of the dielectric layer is 50 wt% to 100 wt%, 60 wt% to 100 wt%, 70 wt% to 100 wt%, 80 wt% to 100 wt%, 90 wt% to 100 wt% or substantially 100 wt%.

[0039] Figure 1 is a perspective view showing a multilayer capacitor 100 according to some embodiments of the present disclosure, Figure 2 is along Figure 1 a cross-sectional view of the multilayer capacitor 100 taken along line I-I', and Figure 3 is a perspective exploded view showing Figure 1 the stacked structure of the capacitor body 110.

[0040] For clearly describing this embodiment, the directions are defined as follows: The L-axis direction, W-axis direction, and T-axis direction shown in the drawings respectively represent the length direction, width direction, and thickness direction of the capacitor body 110. Here, the thickness direction (T-axis direction) may be a direction perpendicular to the wide surface (main surface) of the plate-shaped component, and may be used as, for example, the same concept as the stacking direction in which the dielectric layers 111 are stacked. The length direction (L-axis direction) may be a direction extending parallel to the wide surface (main surface) of the plate-shaped component, and may be a direction substantially perpendicular to the thickness direction (T-axis direction), and may be, for example, the direction along which the first outer electrode 131 and the second outer electrode 132 face each other. The width direction (W-axis direction) may be a direction extending parallel to the wide surface (main surface) of the plate-shaped component, and may be a direction substantially perpendicular to the thickness direction (T-axis direction) and the length direction (L-axis direction), and the length of the plate-shaped component in the length direction (L-axis direction) may be longer than the length of the plate-shaped component in the width direction (W-axis direction).

[0041] Referring to Figures 1 to 3 , the multilayer capacitor 100 according to the embodiment may include a capacitor body 110 and first and second outer electrodes 131 and 132 provided at opposite ends of the capacitor body 110 in the length direction (L-axis direction).

[0042] The capacitor body 110 may have, for example, a substantially hexahedral shape.

[0043] In the present disclosure, for ease of explanation, in the capacitor body 110, two surfaces that are opposite to each other in the thickness direction (T-axis direction) are defined as the first surface and the second surface, two surfaces that are connected to the first surface and the second surface and are opposite to each other in the length direction (L-axis direction) are defined as the third surface and the fourth surface, and two surfaces that are connected to the first surface and the second surface, connected to the third surface and the fourth surface, and are opposite to each other in the width direction (W-axis direction) are defined as the fifth surface and the sixth surface.

[0044] According to some embodiments, the first surface, which is the lower surface, may be the mounting surface. In addition, the first surface to the sixth surface may be flat. However, the present exemplary embodiment is not limited thereto. For example, the first surface to the sixth surface may be curved surfaces having a convex central portion, and the boundaries (i.e., edges) of the respective surfaces may be rounded.

[0045] The shape and size of the capacitor body 110 and the number of stacked dielectric layers 111 are not limited to the shape and size of the capacitor body 110 and the number of stacked dielectric layers 111 shown in the drawings of the present exemplary embodiment.

[0046] The capacitor body 110 may be formed by stacking a plurality of dielectric layers 111 in the thickness direction (T-axis direction) and sintering the plurality of dielectric layers 111, and the capacitor body 110 includes a plurality of dielectric layers 111 and first internal electrodes 121 and second internal electrodes 122 that are alternately arranged in the thickness direction (T-axis direction) with the dielectric layers 111 interposed therebetween.

[0047] In this case, adjacent dielectric layers 111 in the capacitor body 110 may be integrated such that it is difficult to identify the boundary between adjacent dielectric layers 111 without using a scanning electron microscope (SEM).

[0048] In addition, the capacitor body 110 may include an active region and covering regions 112 and 113.

[0049] The active region is a portion that contributes to the formation of the capacitance of the multilayer capacitor 100. As an example, the active region may be a region where the first internal electrodes 121 and the second internal electrodes 122 stacked along the thickness direction (T-axis direction) overlap each other.

[0050] The covering regions 112 and 113 are edge portions in the thickness direction and may be respectively located on the upper surface and the lower surface of the active region in the thickness direction (T-axis direction). The covering regions 112 and 113 may be respectively stacked on the upper surface and the lower surface of the active region, and each covering region may be composed of a single dielectric layer or two or more dielectric layers.

[0051] In addition, the capacitor body 110 may further include side covering regions. The side covering regions are edge portions in the width direction and may be respectively located on two opposite side surfaces of the active region in the width direction (W-axis direction) (the two side surfaces are respectively close to the fifth surface and the sixth surface of the capacitor body 110). The side covering regions may be formed by the following method: stacking dielectric green sheets having a conductive paste layer for forming an inner electrode thereon and sintering them. When forming the conductive paste layer on the surface of the dielectric green sheet, the conductive paste is coated only on a part of the surface of the dielectric green sheet and not on the region of the surface of the dielectric green sheet where the side covering regions are to be formed).

[0052] The covering regions 112 and 113 and the side covering regions can be used to prevent damage to the first inner electrode 121 and the second inner electrode 122 caused by physical stress or chemical stress.

[0053] The multilayer capacitor 100 according to some embodiments includes: a capacitor body 110 including a dielectric layer 111 and inner electrodes 121 and 122; and outer electrodes 131 and 132 provided on the outer surface of the capacitor body 110.

[0054] Hereinafter, the multilayer capacitor 100 will be described in detail with reference to the accompanying drawings.

[0055] Inner electrode The first inner electrode 121 and the second inner electrode 122 are electrodes having different polarities and may be alternately arranged along the T-axis direction such that the first inner electrode 121 and the second inner electrode 122 adjacent to each other with the dielectric layer 111 therebetween face each other, and one end of the first inner electrode 121 and one end of the second inner electrode 122 may be respectively exposed from the third surface and the fourth surface of the capacitor body 110.

[0056] The first inner electrode 121 and the second inner electrode 122 may be electrically insulated from each other by the dielectric layer 111 provided between the first inner electrode 121 and the second inner electrode 122.

[0057] The ends of the first inner electrode 121 and the second inner electrode 122 alternately exposed from the third surface and the fourth surface of the capacitor body 110 may be respectively electrically connected to the first outer electrode 131 and the second outer electrode 132.

[0058] In an embodiment, the inner electrodes 121 and 122 include a compound represented by Chemical Formula 1.

[0059] [Chemical Formula 1] M n+1 X n In Chemical Formula 1, M includes at least one selected from the group consisting of Ti, Zr, Hf, Sc, Cr, V, Nb, Ta, Mo, Mn, W, and Y, X includes C, N, or a combination thereof, and 1 ≤ n ≤ 2.

[0060] According to some embodiments, the compound represented by Chemical Formula 1 may include at least one selected from the group consisting of Ti2C, V2C, Nb2C, Mo2C, Mo2N, Ti2N, (Ti 2-y Nb y )C (0 < y < 2), (V 2-y Nb y )C (0 < y < 2), (Ti 2-y V y )C (0 < y < 2) and Mo 1.33 Y 0.67 C.

[0061] According to some embodiments, the compound represented by Chemical Formula 1 may be a two-dimensional transition metal carbon / nitride (MXene) compound. The MXene compound is a two-dimensional material and may be a non-magnetic compound having excellent conductivity and strength.

[0062] If the MXene compound, which is a non-magnetic material and has a low magnetic permeability, is applied to the inner electrodes 121 and 122, the equivalent series inductance (ESL) of the multilayer capacitor 100 may be reduced and thus the impedance characteristics in the high-frequency region may be improved.

[0063] In addition, since the MXene compound is very thin, with a monolayer thickness of several nm (e.g., about 2 nm or less) and is a two-dimensional material, the shrinkage of the multilayer capacitor 100 may be activated in the T-axis direction rather than in the L-axis and W-axis directions during the sintering process. Therefore, if the MXene compound is applied to the inner electrodes 121 and 122, thinning of the inner electrodes may be achieved. Thus, the design freedom of the capacitor may be ensured, enabling a multilayer capacitor 100 with ultra-small size and high capacitance.

[0064] According to some embodiments of the present disclosure, the MXene compound represented by Chemical Formula 1 may be a compound obtained from a MAX phase compound represented by Chemical Formula 2.

[0065] [Chemical Formula 2] M n+1 AX n In Chemical Formula 2, M includes at least one selected from the group consisting of Ti, Zr, Hf, Sc, Cr, V, Nb, Ta, Mo, Mn, W, and Y, A includes at least one selected from the group consisting of Al, Ga, In, Tl, Si, Ge, Sn, Pb, Zn, Cd, P, As, S, Cu, and Au, X includes C, N, or a combination thereof, and n is an integer from 1 to 4.

[0066] The MAX phase compound is a compound having both metallic and ceramic properties and is characterized by excellent thermal conductivity and electrical conductivity as well as high strength and high modulus.

[0067] The MAX phase compound represented by Chemical Formula 2 may include at least one selected from the group consisting of: Ti2AlC, V2AlC, Cr2AlC, Nb2AlC, Ta2AlC, Zr2AlC, Ti2AlN, Ti3AlC2, V3AlC2, Ta3AlC2, Zr3AlC2, Ti4AlN3, V4AlC3, Nb4AlC3, Ta4AlC3, (Mo,V)4AlC3, Mo4VAlC4, Ti3SiC2, Ti4SiC3, Ti2CdC, Sc2InC, Sc2SnC, Ti2GaC, Ti2InC, Ti2TlC, V2GaC, Cr2GaC, Ti2GaN, Ti2InN, V2GaN, Cr2GaN, Ti2GeC, Ti2SnC, Ti2PbC, V2GeC, Cr2GeC, V2PC, V2AsC, Ti2SC, Zr2InC, Zr2TlC, Nb2GaC, Nb2InC, Mo2GaC, Zr2InN, Zr2TlN, Zr2SnC, Zr2PbC, Nb2SnC, Nb2PC, Nb2AsC, Zr2SC, Nb2SC, Hf2InC, Hf2TlC, Ta2GaC, Hf2SnC, Hf2PbC, Hf2SnN, Hf2SC, Ti2ZnC, Ti2ZnN, V2ZnC, Nb2CuC, Mn2GaC, Mo2AuC, Ti2AuN, Ti3GaC2, Ti3InC2, Ti3GeC2, Ti3SnC2, Ti3ZnC2, Ti4GaC3, and Ti4GeC3.

[0068] According to some embodiments, the inner electrodes 121 and 122 may further include a conductive metal, and the conductive metal may further include a metal such as Ni, Cu, Ag, Pd, or Au or an alloy thereof, such as an Ag-Pd alloy.

[0069] In addition, the first inner electrode 121 and the second inner electrode 122 may include dielectric particles having the same composition as the ceramic material included in the dielectric layer 111.

[0070] Figure 4 It is a schematic diagram showing a part of a cross-section of a multilayer capacitor 100 according to some embodiments of the present disclosure.

[0071] Referring to Figure 4 , the compound represented by Chemical Formula 1 may have a layered structure and may be stacked into one or more layers to form inner electrodes 121 and 122.

[0072] According to some embodiments, the compound represented by Chemical Formula 1 may be a plate-like unit MXene layer, and the inner electrodes 121 and 122 may include an MXene laminate in which one or more layers of unit MXene layers are stacked. The unit MXene layers are stacked in the T-axis direction of the capacitor body 110, but may be stacked such that the overlapping regions between each unit MXene layer may be uneven. As an example, the unit MXene layers may be continuously or discontinuously connected in the L-axis direction of the capacitor body 110.

[0073] According to some embodiments, the compound (unit MXene layer) represented by Chemical Formula 1 may be stacked into one layer (a single layer) or multiple layers, for example, 2 layers or more, 10 layers or more, 20 layers or more, 100 layers or more, or 350 layers or more. There is no particular limitation on the upper limit of the number of layers, but it may be less than or equal to 500 layers, for example.

[0074] According to some embodiments, the average thickness of the inner electrodes 121 and 122 may be greater than or equal to about 0.002 μm, greater than or equal to about 0.01 μm, greater than or equal to about 0.05 μm, greater than or equal to about 0.1 μm, or greater than or equal to about 0.5 μm, and less than or equal to about 2.5 μm, less than or equal to about 2.0 μm, less than or equal to about 1.5 μm, or less than or equal to about 1.0 μm. As described above, the thinning of the inner electrodes 121 and 122 can be achieved by applying an MXene compound, which is a compound represented by Chemical Formula 1, to the inner electrodes 121 and 122.

[0075] The average thickness of the inner electrodes 121 and 122 can be measured by the following method.

[0076] First, the multilayer capacitor 100 is placed in an epoxy resin mixture and cured, and the sides in the L-axis direction and the T-axis direction of the capacitor body 110 are polished to the 1 / 2 point in the W-axis direction, and then placed in a vacuum atmosphere chamber to prepare a cross-section sample (hereinafter referred to as a "cross-section sample") cut along the L-axis direction and the T-axis direction from the center in the W-axis direction of the capacitor body 110.

[0077] Subsequently, the cross-section sample is observed with a scanning electron microscope (SEM) to obtain an SEM image.

[0078] The average thickness of the inner electrodes 121 and 122 can be: in a scanning electron microscope (SEM) image of a cross-sectional sample, when the center point of the first inner electrode 121 or the second inner electrode 122 in the length direction (L-axis direction) is used as a reference point, the arithmetic average of the thicknesses of the first inner electrode 121 or the second inner electrode 122 at 10 points spaced apart from the reference point by a predetermined interval.

[0079] The interval between two adjacent points among the 10 points can be adjusted according to the scale of the SEM image. In this case, all 10 points should be located within the first inner electrode 121 or the second inner electrode 122, and if not all 10 points are located within the first inner electrode 121 or the second inner electrode 122, the position of the reference point can be changed or the interval between two adjacent points among the 10 points can be adjusted.

[0080] The stacked structure and constituent elements of the inner electrodes 121 and 122 including the aforementioned compound represented by Chemical Formula 1 can be confirmed by the following method.

[0081] In a scanning electron microscope (SEM) image of a cross-sectional sample, the inner electrodes 121 and 122 can be in the form of plate-like units of MXene layers stacked in a plate-like manner.

[0082] Furthermore, through SEM-EDS analysis, it was confirmed that the elements constituting the inner electrodes 121 and 122 are the elements constituting the MXene compound (e.g., Ti, C, etc.).

[0083] Dielectric layer The dielectric layer 111 includes a dielectric composition, and the dielectric composition can include a main component and a sub-component.

[0084] The main component is the base material of the dielectric, has a high dielectric constant, and contributes to the formation of the dielectric constant of the multilayer capacitor 100.

[0085] According to some embodiments, the main component can include a barium titanate-based compound, and the barium titanate-based compound can be a compound including selected from Ba m TiO3 (0.995 ≤ m ≤ 1.010), (Ba 1-x Ca x ) m (Ti 1-y Zr y )O3 (0.995 ≤ m ≤ 1.010, 0 ≤ x ≤ 0.10, 0 < y ≤ 0.20), Ba m (Ti 1-x Zr x )O3 (0.995 ≤ m ≤ 1.010, 0 < x ≤ 0.10) and (Ba 1-x Ca x )m (Ti 1-y Sn y )O3 (0.995 ≤ m ≤ 1.010, 0 ≤ x ≤ 0.10, 0 < y ≤ 0.20) of at least one dielectric material in the group.

[0086] For example, the main component may include at least one of BaTiO3, Ba(Ti, Zr)O3, Ba(Ti, Sn)O3, (Ba, Ca)TiO3, (Ba,Ca)(Ti, Zr)O3, (Ba, Ca)(Ti, Sn)O3, (Ba, Sr)TiO3, (Ba, Sr)(Ti, Zr)O3, and (Ba, Sr)(Ti,Sn)O3.

[0087] According to some embodiments, the secondary component may include at least one selected from the group consisting of dysprosium (Dy), vanadium (V), manganese (Mn), chromium (Cr), silicon (Si), aluminum (Al), magnesium (Mg), tin (Sn), antimony (Sb), germanium (Ge), gallium (Ga), barium (Ba), lanthanum (La), yttrium (Y), actinium (Ac), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), hafnium (Hf), and indium (In).

[0088] The dielectric material may further include at least one of a ceramic additive, an organic solvent, a binder, and a dispersant.

[0089] According to some embodiments, the average thickness of the dielectric layer 111 may be greater than or equal to about 0.5 μm, greater than or equal to about 1.0 μm, or greater than or equal to about 2.0 μm, and less than or equal to about 3.0 μm, less than or equal to about 2.9 μm, less than or equal to about 2.8 μm, or less than or equal to about 2.7 μm.

[0090] During the sintering process of the capacitor body, the shrinkage of the MXene compound included in the inner electrodes 121 and 122 in the T-axis direction can be activated, while the shrinkage in the L-axis direction and the W-axis direction can be inhibited. Therefore, the shrinkage of the dielectric layer 111 in the L-axis direction and the W-axis direction can be inhibited, and since the shrinkage of the dielectric layer 111 in the T-axis direction is activated, the thickness of the dielectric layer 111 can also be reduced.

[0091] The average thickness of the dielectric layer 111 can be measured by the following method.

[0092] First, a scanning electron microscope (SEM) image is obtained by observing a cross-sectional sample with a scanning electron microscope.

[0093] The average thickness of the dielectric layer 111 can be: in the SEM image of the cross-sectional sample, when the center point of the dielectric layer 111 in the length direction (L-axis direction) is used as the reference point, the arithmetic average of the thicknesses of the dielectric layer 111 at 10 points spaced apart from the reference point by a predetermined interval.

[0094] The interval between two adjacent points among the 10 points can be adjusted according to the scale of the SEM image. In this case, all 10 points should be located within the dielectric layer 111, and if not all 10 points are located within the dielectric layer 111, the position of the reference point can be changed or the interval between two adjacent points among the 10 points can be adjusted.

[0095] Outer electrode The first outer electrode 131 and the second outer electrode 132 are provided with voltages of different polarities and are electrically connected to the respective exposed portions of the first inner electrode 121 and the second inner electrode 122.

[0096] According to the above configuration, when a predetermined voltage is applied to the first outer electrode 131 and the second outer electrode 132, charges are accumulated between the first inner electrode 121 and the second inner electrode 122 that face each other. Here, the multilayer capacitor 100 can have a capacitance proportional to the overlapping area where the first inner electrode 121 and the second inner electrode 122 overlap each other in the effective region along the T-axis direction.

[0097] The first outer electrode 131 can be provided on the third surface of the capacitor body 110, and can include a first connection portion connected to the first inner electrode 121, and include a first strip portion provided at the edge where the third surface of the capacitor body 110 intersects with the first surface, the second surface, the fifth surface, and the sixth surface. The second outer electrode 132 can be provided on the fourth surface of the capacitor body 110, and can include a second connection portion connected to the second inner electrode 122, and include a second strip portion provided at the edge where the fourth surface of the capacitor body 110 intersects with the first surface, the second surface, the fifth surface, and the sixth surface.

[0098] The first strip portion can extend from the first connection portion to a part of the first surface and a part of the second surface of the capacitor body 110, and can also extend from the first connection portion to a part of the fifth surface and a part of the sixth surface of the capacitor body 110. The second strip portion can extend from the second connection portion to a part of the first surface and a part of the second surface of the capacitor body 110, and can also extend from the second connection portion to a part of the fifth surface and a part of the sixth surface of the capacitor body 110. The first strip portion and the second strip portion can be used to improve the adhesion strength between the first outer electrode 131 and the second outer electrode 132 and the capacitor body 110.

[0099] According to some embodiments, each of the first and second external electrodes 131 and 132 may include a sintered metal layer contacting the capacitor body 110 , a conductive resin layer disposed to cover the sintered metal layer, and a plated layer disposed to cover the conductive resin layer.

[0100] The sintered metal layer may include conductive metal and glass.

[0101] According to some embodiments, the sintered metal layer may include a conductive metal such as at least one selected from the group consisting of copper (Cu), nickel (Ni), silver (Ag), palladium (Pd), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), lead (Pb), and alloys thereof, for example, the conductive metal including copper (Cu) may mean that the conductive metal includes a copper (Cu) element or includes a copper (Cu) alloy. When the conductive metal includes copper, other metals other than copper may be included in an amount of less than or equal to about 5 mol parts based on 100 mol parts of copper.

[0102] According to some embodiments, the sintered metal layer may include a composition of a mixed oxide such as glass, and the sintered metal layer may include, for example, one or more selected from silicon oxide, boron oxide, aluminum oxide, transition metal oxide, alkali metal oxide, and alkaline earth metal oxide. The transition metal may be one or more selected from zinc (Zn), titanium (Ti), copper (Cu), vanadium (V), manganese (Mn), iron (Fe), and nickel (Ni), the alkali metal may be one or more selected from lithium (Li), sodium (Na), and potassium (K), and the alkaline earth metal may be one or more selected from magnesium (Mg), calcium (Ca), strontium (Sr), and barium (Ba).

[0103] Alternatively, the conductive resin layer is formed on the sintered metal layer, for example, may be formed to completely cover the sintered metal layer. In addition, the first and second external electrodes 131 and 132 may not include the sintered metal layer, in which case the conductive resin layer may directly contact the capacitor body 110 .

[0104] The conductive resin layer may extend to the first and second surfaces of the capacitor body 110, and may also extend to the fifth and sixth surfaces of the capacitor body 110, and the length of the region (i.e., the band portion) where the conductive resin layer extends to the first and second surfaces and / or the fifth and sixth surfaces of the capacitor body 110 may be longer than the length of the region (i.e., the band portion) where the sintered metal layer extends to the first and second surfaces and / or the fifth and sixth surfaces of the capacitor body 110. In other words, the conductive resin layer may be formed on the sintered metal layer, and may be formed to completely cover the sintered metal layer.

[0105] The conductive resin layer includes resin and conductive metal.

[0106] The resin included in the conductive resin layer is not particularly limited as long as it has adhesiveness and impact absorbency and can be mixed with conductive metal powder to form a paste, and the resin may include, for example, phenolic resin, acrylic resin, silicone resin, epoxy resin, or polyimide resin.

[0107] The conductive metal included in the conductive resin layer is used to electrically connect the first inner electrode 121 and the second inner electrode 122 or the sintered metal layer to the plating layer described below.

[0108] The conductive metal included in the conductive resin layer may have at least one of a spherical shape and a flake shape. In other words, the conductive metal may be formed only in a flake shape, or may be formed only in a spherical shape, or may be formed in a form of a mixture of a flake shape and a spherical shape.

[0109] Here, the spherical shape may include a shape that is not completely spherical, and may include, for example, a shape in which the ratio of the length of the major axis to the length of the minor axis (major axis / minor axis) is less than or equal to about 1.45. The flake shape refers to a flat and elongated shape and is not particularly limited, but for example, the ratio of the length of the major axis to the length of the minor axis (major axis / minor axis) may be greater than or equal to about 1.95.

[0110] The first outer electrode 131 and the second outer electrode 132 may further include a plating layer provided on the outer surface of the conductive resin layer.

[0111] The plating layer may include at least one selected from the group consisting of nickel (Ni), copper (Cu), tin (Sn), palladium (Pd), platinum (Pt), gold (Au), silver (Ag), tungsten (W), titanium (Ti), lead (Pb), and their alloys. According to some embodiments, each plating layer may be a nickel (Ni) plating layer or a tin (Sn) plating layer, or may be in a form in which a nickel (Ni) plating layer and a tin (Sn) plating layer are stacked in sequence, or may be in a form in which a tin (Sn) plating layer, a nickel (Ni) plating layer, and a tin (Sn) plating layer are stacked in sequence. Optionally, each plating layer may include a plurality of nickel (Ni) plating layers and / or a plurality of tin (Sn) plating layers.

[0112] The plating layer may improve the mountability of the multilayer capacitor 100 on a substrate, the structural reliability, the durability against the outside, the heat resistance, and the equivalent series resistance (ESR).

[0113] Method for manufacturing a multilayer capacitor A method of manufacturing a multilayer capacitor according to another embodiment includes: manufacturing a capacitor body including a dielectric layer and inner electrodes, and then forming outer electrodes on the outer surface of the capacitor body.

[0114] First, a method of manufacturing the capacitor body will be described.

[0115] In the manufacturing process of the capacitor body, a dielectric paste that will form a dielectric layer after sintering and a conductive paste that will form an internal electrode after sintering are prepared.

[0116] For example, the dielectric paste is prepared by the following method. The dielectric powder is uniformly mixed by wet mixing or the like, then dried, and heat-treated under predetermined conditions. Subsequently, an organic carrier or an aqueous carrier is added to the dielectric powder, and additionally, kneading is performed to prepare the dielectric paste.

[0117] The obtained dielectric paste is formed into a green dielectric sheet by using a technique such as the doctor blade method. Additionally, if necessary, the dielectric paste may include additives selected from various dispersants, plasticizers, binders, sub-component compounds, and glass.

[0118] The conductive paste for the internal electrode can be prepared by including the MXene compound represented by Chemical Formula 1. Since the MXene compound represented by Chemical Formula 1 has been described above, its description is omitted here.

[0119] According to some embodiments, various printing methods such as the screen printing method or the transfer printing method can be used to coat the conductive paste for the internal electrode on the surface of the green dielectric sheet in a predetermined pattern. According to some embodiments, the conductive paste for the internal electrode can be coated on the surface of the green dielectric sheet by a coating process such as spin coating or spraying.

[0120] Subsequently, a plurality of green dielectric sheets having internal electrode patterns are stacked, and then pressed in the stacking direction to obtain a green dielectric sheet laminate. Here, the green dielectric sheets on which no internal electrode pattern is formed can be disposed at the top and bottom of the green dielectric sheet laminate in the stacking direction.

[0121] Optionally, the obtained green dielectric sheet laminate can be cut into a predetermined size by cutting or the like.

[0122] Furthermore, if necessary, the green dielectric sheet laminate can be cured and dried to remove plasticizers and the like, and then polished by using a horizontal centrifugal drum machine or the like. In drum polishing, the unnecessary parts such as burrs generated during cutting can be polished by placing the green dielectric sheet laminate together with the medium and the polishing liquid in a drum container and then applying a rotational motion, vibration, etc. to the drum container. Additionally, after drum polishing, the green dielectric sheet laminate can be washed with a cleaning solution (such as water) and dried.

[0123] The green dielectric sheet laminate is subjected to an adhesive removal treatment and a sintering treatment to obtain the capacitor body.

[0124] The adhesive removal treatment can be carried out under conditions appropriately adjusted according to the main component composition of the dielectric layer and the main component composition of the inner electrode. For example, the adhesive removal treatment can be carried out by heating at a rate of about 5 °C / hour to about 300 °C / hour and maintaining at a holding temperature of about 180 °C to about 400 °C for about 0.5 hour to about 24 hours. The adhesive removal treatment is carried out in an air atmosphere or a reducing atmosphere.

[0125] The sintering treatment can be carried out under conditions appropriately adjusted according to the main component composition of the dielectric layer and the main component composition of the inner electrode. According to some embodiments, the sintering treatment can be carried out at about 1200 °C to about 1350 °C or about 1220 °C to about 1300 °C for about 0.5 hour to about 8 hours or about 1 hour to about 3 hours. The sintering treatment is carried out in a reducing atmosphere (for example, in an atmosphere in which a mixed gas of nitrogen (N2) and hydrogen (H2) is humidified).

[0126] After the sintering treatment, annealing can be carried out. Since annealing is a treatment for re-oxidizing the dielectric layer, if the sintering is carried out in a reducing atmosphere, annealing can be carried out. The annealing treatment can be carried out under conditions appropriately adjusted according to the main component composition of the dielectric layer and the like. For example, the annealing treatment can be carried out at a heating rate of about 50 °C / hour to about 500 °C / hour, at about 950 °C to about 1150 °C for more than 0 hour and less than or equal to about 20 hours. In addition, the annealing can be carried out in a humidified nitrogen (N2) atmosphere with an oxygen partial pressure of about 1.0×10 -9 MPa to about 1.0×10 -5 MPa.

[0127] For example, in the adhesive removal treatment, the sintering treatment or the annealing treatment, nitrogen, the mixed gas, etc. can be humidified by using a wetting agent, etc., and the temperature of the wetting agent used can be about 5 °C to about 75 °C. The adhesive removal treatment, the sintering treatment and the annealing treatment can be carried out continuously or independently.

[0128] Optionally, surface treatments such as sandblasting, laser irradiation or barrel polishing can be carried out on the third surface and the fourth surface of the capacitor body. The surface treatment can expose the ends of the first inner electrode and the second inner electrode to the third surface and the fourth surface respectively, which can strengthen the electrical connection between the first outer electrode and the first inner electrode and between the second outer electrode and the second inner electrode, and facilitate the formation of an alloy part.

[0129] Subsequently, a paste for forming a sintered metal layer is coated on the outside of the obtained capacitor body and sintered to form a sintered metal layer of the outer electrode.

[0130] The paste for forming the sintered metal layer may include a conductive metal and glass. The conductive metal and glass are the same as those described above and thus will not be repeated. In addition, the paste for forming the sintered metal layer may optionally include sub-components such as a binder, a solvent, a dispersant, a plasticizer, or an oxide powder. For example, the binder may be ethyl cellulose, acrylic acid, or butyral, and the solvent may be an organic solvent such as terpineol, butyl carbitol, ethanol, methyl ethyl ketone, acetone, or toluene or an aqueous solvent.

[0131] The method of coating the paste for forming the sintered metal layer on the outer surface of the capacitor body may include an impregnation method, various printing methods such as screen printing, a coating method by using a dispenser, etc., or a spraying method by using an ejector, etc. The paste for forming the sintered metal layer may be coated at least on the third surface and the fourth surface of the capacitor body, and optionally, on each part of the belt portions on the first surface, the second surface, the fifth surface, or the sixth surface where the first outer electrode and the second outer electrode can be formed.

[0132] Subsequently, the capacitor body coated with the paste for forming the sintered metal layer is dried and then sintered at a temperature of about 700 °C to about 1000 °C for about 0.1 hour to about 3 hours to form the sintered metal layer.

[0133] Optionally, on the outer surface of the obtained capacitor body, a paste for forming a conductive resin layer may be coated and cured to form the conductive resin layer.

[0134] The paste for forming the conductive resin layer may include a resin and a conductive metal, and optionally, may include a non-conductive filler. Since the description of the conductive metal and the resin is the same as that above, the repeated description will be omitted. In addition, the paste for forming the conductive resin layer may optionally include sub-components such as a binder, a solvent, a dispersant, a plasticizer, or an oxide powder. For example, the binder may be ethyl cellulose, acrylic acid, or butyral, and the solvent may be an organic solvent such as terpineol, butyl carbitol, ethanol, methyl ethyl ketone, acetone, or toluene or an aqueous solvent.

[0135] According to some embodiments, the method of forming the conductive resin layer may include: dipping the capacitor body 110 in the paste for forming the conductive resin layer and curing it, or printing the paste for forming the conductive resin layer on the surface of the capacitor body 110 by screen printing, gravure printing, etc. and curing it, or coating the paste for forming the conductive resin layer on the surface of the capacitor body 110 and then curing it.

[0136] Subsequently, a plating layer may be formed on the outer surface of the conductive resin layer.

[0137] According to some embodiments, the plating layer may be formed by a plating method. For example, it may be formed by sputtering or electroplating.

[0138] In the following, specific examples of the present disclosure will be presented. However, the following examples are only intended to specifically illustrate or describe the present disclosure and should not be construed as limiting the scope of the present disclosure.

[0139] (Example) Example 1 A 4-μm-thick dielectric green sheet is prepared by preparing a dielectric slurry including BaTiO3 and then coating the dielectric slurry using a coating head discharge type roll coater.

[0140] Subsequently, a conductive paste including Ti2C for the internal electrode is prepared.

[0141] The conductive paste is printed on the surface of the dielectric green sheet to a thickness of 2 μm (350 layers of Ti2C), and more than one dielectric green sheet having a conductive paste layer thereon is stacked and pressed to fabricate a dielectric green sheet laminate.

[0142] Under the condition of 400 °C or lower, a binder removal treatment is performed in a nitrogen atmosphere, and then the dielectric green sheet laminate is sintered at a sintering temperature of 1300 °C or lower and at a hydrogen (H2) concentration (volume fraction) of 1.0% or lower to fabricate a multilayer capacitor according to Example 1.

[0143] Example 2 A multilayer capacitor of Example 2 is fabricated in the same manner as in Example 1, except that the conductive paste is printed on the surface of the dielectric green sheet to a thickness of 1 μm (145 layers of Ti2C).

[0144] Example 3 A multilayer capacitor of Example 3 is fabricated in the same manner as in Example 1, except that the conductive paste is printed on the surface of the dielectric green sheet to a thickness of 0.2 μm (24 layers of Ti2C).

[0145] Example 4 A multilayer capacitor of Example 4 is fabricated in the same manner as in Example 1, except that the conductive paste is printed on the surface of the dielectric green sheet to a thickness of 0.005 μm (1 layer of Ti2C).

[0146] Comparative Example 1 A 4-μm-thick dielectric green sheet is prepared by preparing a dielectric slurry including BaTiO3 and then coating the dielectric slurry using a coating head discharge type roll coater. Subsequently, a conductive paste including Ni for the internal electrode is prepared.

[0147] The conductive paste is printed on the surface of the dielectric green sheet to a thickness of 4 μm, and more than one dielectric green sheet having a conductive paste layer thereon is stacked and pressed to fabricate a dielectric green sheet laminate.

[0148] The binder removal treatment is carried out in a nitrogen atmosphere at 400 °C or lower, and then the dielectric green sheet laminate is sintered at a sintering temperature of 1300 °C or lower and a hydrogen (H2) concentration of 1.0% or lower to manufacture a multilayer capacitor according to Comparative Example 1.

[0149] Comparative Example 2 A multilayer capacitor of Comparative Example 2 is manufactured in the same manner as in Comparative Example 1, except that the conductive paste is printed to a thickness of 3 μm on the surface of the dielectric green sheet.

[0150] Comparative Example 3 A multilayer capacitor of Comparative Example 3 is manufactured in the same manner as in Comparative Example 1, except that the conductive paste is printed to a thickness of 2 μm on the surface of the dielectric green sheet.

[0151] Comparative Example 4 A multilayer capacitor of Comparative Example 4 is manufactured in the same manner as in Comparative Example 1, except that the conductive paste is printed to a thickness of 1 μm on the surface of the dielectric green sheet.

[0152] (Evaluation Example) Evaluation Example 1: Evaluation of the thickness of the inner electrode and the dielectric layer The thickness of each inner electrode and the thickness of each dielectric layer after sintering of the multilayer capacitors according to Example 1 and Comparative Example 1 are measured as follows.

[0153] First, the multilayer capacitor is placed in an epoxy resin mixture and cured, and the sides in the L-axis direction and the T-axis direction of each capacitor body are polished to the 1 / 2 point in the W-axis direction and fixed, and then placed in a vacuum atmosphere chamber to prepare a cross-sectional sample cut along the L-axis direction and the T-axis direction from the center in the W-axis direction of the capacitor body (hereinafter referred to as "cross-sectional sample").

[0154] Subsequently, the cross-sectional sample is observed with a scanning electron microscope (SEM) to obtain an SEM image.

[0155] The average thickness of the inner electrode can be: in the SEM image of the cross-sectional sample, when the center point of the inner electrode in the length direction (L-axis direction) is used as a reference point, the arithmetic average of the thicknesses of the inner electrode at 10 points spaced apart from the reference point by a predetermined interval.

[0156] The average thickness of the dielectric layer can be: in the SEM image of the cross-sectional sample, when the center point of the dielectric layer in the length direction (L-axis direction) is used as a reference point, the arithmetic average of the thicknesses of the dielectric layer at 10 points spaced apart from the reference point by a predetermined interval.

[0157] (Table 1)

[0158] Referring to Table 1, the multilayer capacitors of Examples 1 to 4 in which Ti2C (MXene compound) is applied to the inner electrode are thinner than the multilayer capacitors of Comparative Examples 1 to 4.

[0159] In addition, in the multilayer capacitors of the examples, since the shrinkage in the T-axis direction of the inner electrode and the dielectric layer is activated, even if the dielectric green sheets of the examples having the same thickness as the dielectric green sheets of the comparative examples are sintered, the dielectric green sheets of the examples have a relatively thin average thickness after sintering.

[0160] Evaluation Example 2: Evaluation of the impedance characteristics in the high-frequency region The impedance characteristics in the high-frequency region of the multilayer capacitors of Example 1 and Comparative Example 3 were evaluated, and the results are as Figure 5 shown.

[0161] The multilayer capacitor of Comparative Example 3 exhibits a large equivalent series inductance (ESL) and a low resonance frequency due to the use of Ni with high magnetic permeability in the inner electrode.

[0162] On the other hand, the multilayer capacitor of Example 1 exhibits a reduced ESL and improved impedance characteristics in the high-frequency region due to the use of an MXene compound with low magnetic permeability in the inner electrode.

[0163] Although the present disclosure has been described in connection with presently considered practical exemplary embodiments, it should be understood that the present disclosure is not limited to the disclosed exemplary embodiments. On the contrary, it is intended to cover various modifications and equivalent schemes included within the spirit and scope of the appended claims.

[0164] <Description of Reference Numerals> 100: Multilayer capacitor 110: Capacitor body 111: Dielectric layer 112, 113: Covering area 121: First inner electrode 122: Second inner electrode 131: First outer electrode 132: Second outer electrode.

Claims

1. A multilayer capacitor comprising: A capacitor body including a dielectric layer and an inner electrode; and an outer electrode disposed on an outer surface of the capacitor body, Wherein, the inner electrode includes a compound represented by Chemical Formula 1: [Chemical formula 1] M n+1 X n Wherein, in the chemical formula 1, M includes at least one selected from the group consisting of Ti, Zr, Hf, Sc, Cr, V, Nb, Ta, Mo, Mn, W and Y, X includes C, N or a combination thereof, and 1≤n≤2。 2. The multilayer capacitor according to claim 1, wherein The compound represented by the chemical formula 1 includes a compound selected from Ti2C, V2C, Nb2C, Mo2C, Mo2N, Ti2N, (Ti 2- y Nb y )C、(V 2-y Nb y )C、(Ti 2-y V y )C and Mo 1.33 Y 0.67 At least one of the group consisting of C, wherein 0 <y<2。 3. The multilayer capacitor according to claim 1, wherein The compound represented by the chemical formula 1 is a plate-like unit MXene layer, and The inner electrode includes a MXene stack in which one or more unit MXene layers are stacked.

4. The multilayer capacitor according to claim 3, wherein The inner electrode includes the MXene stack in which 1 to 500 unit MXene layers are stacked.

5. The multilayer capacitor according to claim 1, wherein The inner electrode has an average thickness of 0.002 μm to 0.7 μm.

6. The multilayer capacitor according to claim 1, wherein The dielectric layer has an average thickness of 0.5 μm to 3.0 μm.

7. The multilayer capacitor according to claim 1, wherein The dielectric layer includes a barium titanate-based compound as a main component, and The barium titanate-based compound includes at least one selected from the group consisting of Ba m TiO3, (Ba 1-x Ca x ) m (Ti 1-y Zr y )O3, Ba m (Ti 1-x Zr x )O3, and (Ba 1-x Ca x ) m (Ti 1-y Sn y )O3, where, in Ba m TiO3, 0.995 ≤ m ≤ 1.010; in (Ba 1-x Ca x ) m (Ti 1-y Zr y )O3, 0.995 ≤ m ≤ 1.010, 0 ≤ x ≤ 0.10, 0 < y ≤ 0.20; in Ba m (Ti 1-x Zr x )O3, 0.995 ≤ m ≤ 1.010, 0 < x ≤ 0.10; in (Ba 1-x Ca x ) m (Ti 1-y Sn y )O3, 0.995 ≤ m ≤ 1.010, 0 ≤ x ≤ 0.10, 0 < y ≤ 0.

20.

8. The multilayer capacitor according to claim 7, wherein The dielectric layer further includes a secondary component, and The subcomponent includes at least one selected from the group consisting of Dy, V, Mn, Cr, Si, Al, Mg, Sn, Sb, Ge, Ga, Ba, La, Y, Ac, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Ho, Er, Tm, Yb, Lu, Hf and In.

9. A multilayer capacitor comprising: A capacitor body including a dielectric layer and an inner electrode; and an outer electrode disposed on an outer surface of the capacitor body, wherein the inner electrode comprises a compound represented by Chemical Formula 1, and The average thickness of the inner electrode is 0.002 μm to 2.5 μm: [Chemical formula 1] M n+1 X n Wherein, in the chemical formula 1, M includes at least one selected from the group consisting of Ti, Zr, Hf, Sc, Cr, V, Nb, Ta, Mo, Mn, W and Y, X includes C, N or a combination thereof, and 1≤n≤2。 10. The multilayer capacitor according to claim 9, wherein The compound represented by the chemical formula 1 includes a compound selected from Ti2C, V2C, Nb2C, Mo2C, Mo2N, Ti2N, (Ti 2- y Nb y )C、(V 2-y Nb y )C、(Ti 2-y V y )C and Mo 1.33 Y 0.67 At least one of the group consisting of C, wherein 0 <y<2。 11. The multilayer capacitor according to claim 9, wherein The compound represented by the chemical formula 1 is a plate-like unit MXene layer, and The inner electrode includes a MXene stack in which one or more unit MXene layers are stacked.

12. The multilayer capacitor according to claim 11, wherein The inner electrode includes the MXene stack in which 1 to 500 unit MXene layers are stacked.

13. The multilayer capacitor according to claim 9, wherein The dielectric layer has an average thickness of 0.5 μm to 3.0 μm.

14. The multilayer capacitor according to claim 9, wherein The dielectric layer includes a barium titanate-based compound as a main component, and The barium titanate-based compound includes at least one selected from the group consisting of Ba m TiO3, (Ba 1-x Ca x ) m (Ti 1-y Zr y )O3, Ba m (Ti 1-x Zr x )O3, and (Ba 1-x Ca x ) m (Ti 1-y Sn y )O3, where in Ba m TiO3, 0.995 ≤ m ≤ 1.010; in (Ba 1-x Ca x ) m (Ti 1-y Zr y )O3, 0.995 ≤ m ≤ 1.010, 0 ≤ x ≤ 0.10, 0 < y ≤ 0.20; in Ba m (Ti 1-x Zr x )O3, 0.995 ≤ m ≤ 1.010, 0 < x ≤ 0.10; in (Ba 1-x Ca x ) m (Ti 1-y Sn y )O3, 0.995 ≤ m ≤ 1.010, 0 ≤ x ≤ 0.10, 0 < y ≤ 0.

20.

15. The multilayer capacitor according to claim 14, wherein The dielectric layer further includes a secondary component, and The subcomponent includes at least one selected from the group consisting of Dy, V, Mn, Cr, Si, Al, Mg, Sn, Sb, Ge, Ga, Ba, La, Y, Ac, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Ho, Er, Tm, Yb, Lu, Hf and In.

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