Gas ejection apparatus and substrate processing apparatus including the same

Abstract

The present invention provides a gas injection apparatus and a substrate processing apparatus including the same. The gas injection apparatus injects a gas to prevent a polymer from being deposited on a surface of an electrostatic chuck. The substrate processing apparatus includes: a chamber housing; an electrostatic chuck supporting the substrate; the spray head unit is used for providing first gas to the internal space of the chamber shell; a plasma generation unit that generates plasma for processing the substrate by using the first gas; and a gas injection device for injecting a second gas from the surface of the electrostatic chuck to the internal space, in which the electrostatic chuck includes: a first plate; a second plate disposed on the first plate; and an adhesive layer that bonds the first plate and the second plate to each other, and the gas injection device injects the second gas through an outlet formed between the first plate and the adhesive layer.

Description

[0001] Cross - reference to related applications

[0002] This application claims the priority of Korean Patent Application No. 10 - 2023 - 0193927, filed on December 28, 2023, with the Korean Intellectual Property Office, the entire content of which is incorporated herein by reference. Technical Field

[0003] The present invention relates to a gas injection device applied to a facility for processing a substrate using plasma, and a substrate processing device including the gas injection device. Background Art

[0004] When processing a substrate using plasma, an electrostatic chuck (ESC) can be used to fix the position of the substrate in a process chamber. The electrostatic chuck can adsorb the substrate by fixing the position of the substrate using an electrostatic force.

[0005] However, when processing the substrate, polymers may be generated in the process chamber due to the plasma. The polymers may be deposited on the surface of the electrostatic chuck. For this reason, the thermal efficiency of the electrostatic chuck may deteriorate, and various structural and functional problems may occur. Summary of the Invention

[0006] An object of the present disclosure is to provide a gas injection device and a substrate processing device including the gas injection device, the gas injection device injecting a gas to prevent polymers from being deposited on the surface of an electrostatic chuck.

[0007] The objects of the present disclosure are not limited to those mentioned above, and other objects of the present disclosure not mentioned herein will be clearly understood by those skilled in the art from the following description of the present disclosure.

[0008] A substrate processing device designed to achieve the above object according to an aspect of the present disclosure includes: a chamber housing that provides a space in which a substrate is processed; an electrostatic chuck that supports the substrate; a showerhead unit that supplies a first gas to the space; a plasma generation unit that generates plasma for processing the substrate by using the first gas; and a gas injection device that injects a second gas from the surface of the electrostatic chuck into an internal space of the chamber housing, wherein the electrostatic chuck includes: a first plate; a second plate disposed on the first plate; and an adhesive layer that binds the first plate and the second plate to each other, and the gas injection device injects the second gas through an outlet formed between the first plate and the adhesive layer.

[0009] A gas injection device designed to achieve the above object according to one aspect of the present disclosure is provided in a substrate processing apparatus together with an electrostatic chuck. The electrostatic chuck includes a first plate, a second plate provided on the first plate, and an adhesive layer that bonds the first plate and the second plate to each other. The gas injection device includes: a gas supply unit that supplies a second gas different from a first gas for processing the substrate; and a gas supply line connected to the gas supply unit that transfers the second gas. The gas injection device injects the second gas into an internal space of the substrate processing apparatus through an outlet formed between the first plate and the adhesive layer.

[0010] A substrate processing apparatus designed to achieve the above object according to another aspect of the present disclosure includes: a chamber housing that provides a space for processing a substrate; an electrostatic chuck that supports the substrate; a shower head unit that supplies a first gas to the space; a plasma generation unit that generates plasma for processing the substrate by using the first gas; and a gas injection device that injects a second gas from a surface of the electrostatic chuck into an internal space of the chamber housing. The electrostatic chuck includes: a first plate; a second plate provided on the first plate; and an adhesive layer that bonds the first plate and the second plate to each other. The gas injection device includes: a gas supply unit that supplies the second gas; and a gas supply line connected to the gas supply unit that transfers the second gas. The gas supply line includes a first outlet formed between the first plate and the adhesive layer and a second outlet formed on a surface of the first plate. The gas injection device injects the second gas through the first outlet and the second outlet, and the second gas is an inert gas.

[0011] Details of other embodiments are included in the detailed description and the drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] The above and other aspects and features of the present disclosure will be apparent from the following detailed description of exemplary embodiments of the present disclosure with reference to the accompanying drawings, in which:

[0013] Figure 1 is an exemplary plan view illustrating an internal structure of a semiconductor manufacturing facility according to a first embodiment;

[0014] Figure 2 is an exemplary plan view illustrating an internal structure of a semiconductor manufacturing facility according to a second embodiment;

[0015] Figure 3 is an exemplary plan view showing the internal structure of a semiconductor manufacturing facility according to a third embodiment;

[0016] Figure 4 is an exemplary cross-sectional view showing the internal structure of a substrate processing apparatus according to a first embodiment;

[0017] Figure 5 is an exemplary cross-sectional view showing the internal structure of a substrate processing apparatus according to a second embodiment;

[0018] Figure 6 is an exemplary cross-sectional view showing the internal structure of a substrate processing apparatus according to a third embodiment;

[0019] Figure 7 is an exemplary view showing a gas injection apparatus according to a first embodiment of the present disclosure;

[0020] Figure 8 is an exemplary view showing a gas injection apparatus according to a second embodiment of the present disclosure;

[0021] Figure 9 is an exemplary view showing a gas injection apparatus according to a third embodiment of the present disclosure;

[0022] Figure 10 is an exemplary view showing a gas injection apparatus according to a fourth embodiment of the present disclosure;

[0023] Figure 11 is a first exemplary view showing the effect of a gas injection apparatus according to a first embodiment of the present disclosure;

[0024] Figure 12 is a second exemplary view showing the effect of a gas injection apparatus according to a first embodiment of the present disclosure;

[0025] Figure 13 is a first exemplary view showing a gas injection apparatus according to a fifth embodiment of the present disclosure; and

[0026] Figure 14 is a second exemplary view showing a gas injection apparatus according to a fifth embodiment of the present disclosure. DETAILED DESCRIPTION

[0027] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. The same reference numerals will be used for the same elements in the drawings, and repeated descriptions thereof will be omitted.

[0028] The present disclosure relates to a substrate processing apparatus for processing a substrate by using plasma, and a semiconductor manufacturing facility including a plurality of substrate processing apparatuses. The substrate processing apparatus may include a gas injection device for injecting a gas. The gas injection device may prevent polymers from being deposited on the surface of an electrostatic chuck (ESC). Hereinafter, the substrate processing apparatus and the semiconductor manufacturing facility will be described first, and then the gas injection device will be described.

[0029] Figure 1 is an exemplary plan view illustrating the internal structure of a semiconductor manufacturing facility according to the first embodiment. Figure 2 is an exemplary plan view illustrating the internal structure of a semiconductor manufacturing facility according to the second embodiment. Figure 3 is an exemplary plan view illustrating the internal structure of a semiconductor manufacturing facility according to the third embodiment.

[0030] The first direction D1 and the second direction D2 form a plane in the horizontal direction. For example, the first direction D1 may be the front-back direction, and the second direction D2 may be the left-right direction. Alternatively, the first direction D1 may be the left-right direction, and the second direction D2 may be the front-back direction. The third direction D3 is the height direction and is a direction perpendicular to the plane formed by the first direction D1 and the second direction D2. The third direction D3 may be the vertical direction.

[0031] According to Figures 1 to 3 , the semiconductor manufacturing facility 100 may include a load port module 110, an index module 120, a load lock chamber 130, a transfer module 140, and a process chamber 150.

[0032] The semiconductor manufacturing facility 100 is a system for processing a substrate by using an etching process, a cleaning process, a deposition process, etc. The semiconductor manufacturing facility 100 may include one process chamber, but may include a plurality of process chambers, and is not limited thereto. The plurality of process chambers may include the same type of process chambers, but may include different types of process chambers, and is not limited thereto. When the semiconductor manufacturing facility 100 includes a plurality of process chambers, it may be provided as a multi-chamber substrate processing system.

[0033] The load port module 110 is arranged to allow a container SC on which a plurality of substrates are mounted to be seated thereon. For example, the container SC may be a front-opening unified pod (FOUP).

[0034] In the load port module 110, the container SC may be loaded or unloaded. In addition, in the load port module 110, the substrates accommodated in the container SC may be loaded or unloaded.

[0035] When the loading target or the unloading target is the container SC, the container handling device can load the container SC onto the loading port module 110 or unload the container from the loading port module. Specifically, the container SC held by the container handling device can be seated on the loading port module 110, thereby loading the container SC onto the loading port module 110. Additionally, the container handling device can unload the container SC from the loading port module 110 by gripping the container SC seated on the loading port module 110. Although not shown in Figures 1 to 3 , the container handling device can be an Overhead Hoist Transporter (OHT).

[0036] When the loading target or the unloading target is the substrate, the first transfer robot 122 can load the substrate into the container SC seated on the loading port module 110 or unload the substrate from the container. In the case of unloading the substrate, when the container SC is seated on the loading port module 110, the first transfer robot 122 can access or approach the loading port module 110, and then can take out the substrate from the container SC. In the case of loading the substrate, when the substrate is completely processed in the process chamber 150, the first transfer robot 122 can take out the substrate from the load lock chamber 130, and then carry the substrate into the container SC.

[0037] A plurality of loading port modules 110 can be provided in front of the index module 120. For example, three loading port modules 110a, 110b, and 110c (such as a first loading port module 110a, a second loading port module 110b, and a third loading port module 110c) can be provided in front of the index module 120.

[0038] When the plurality of loading port modules 110 are provided in front of the index module 120, the containers SC seated on each loading port module can be loaded with different types of objects. For example, when the first loading port module 110a, the second loading port module 110b, and the third loading port module 110c are provided in front of the index module 120, the first container SC1 seated on the first loading port module 110a can be loaded with a wafer-type sensor, the second container SC2 seated on the second loading port module 110b can be loaded with the substrate (i.e., a wafer), and the third container SC3 seated on the third loading port module 110c can be loaded with consumable parts (such as a focus ring and an edge ring).

[0039] However, the present embodiment is not limited to the above examples. The container SC mounted on each loading port module may be loaded with the same type of object. Alternatively, among the plurality of loading port modules, the containers mounted on some loading port modules may be loaded with the same type of object, and the containers mounted on some other loading port modules may be loaded with different types of objects.

[0040] The indexing module 120 is disposed between the loading port module 110 and the load lock chamber 130, and may be configured as an interface such that the substrate can be transferred between the load lock chamber 130 and the container SC on the loading port module 110.

[0041] The indexing module 120 may include a first module housing 121 and a first transfer robot 122. The first transfer robot 122 is disposed within the first module housing 121 and can transfer the substrate between the loading port module 110 and the load lock chamber 130. The internal environment of the first module housing 121 is set to an atmospheric pressure environment, and the first transfer robot 122 can operate in the atmospheric pressure environment. One first transfer robot 122 may be disposed in the first module housing 121, but the present disclosure is not limited thereto, and multiple first transfer robots 122 may also be disposed.

[0042] Although Figures 1 to 3 not shown in the figure, the indexing module 120 may include a buffer chamber. The buffer chamber can temporarily store unprocessed substrates before being transferred to the load lock chamber 130. In addition, the buffer chamber can temporarily store pre-processed substrates before being transferred to the container SC on the loading port module 110. The buffer chamber may be disposed on other sidewalls except the sidewall adjacent to the loading port module 110 or the sidewall adjacent to the load lock chamber 130, but the present disclosure is not limited thereto, and it may also be disposed on the sidewall adjacent to the loading port module 110. Alternatively, the buffer chamber may be disposed on the sidewall adjacent to the load lock chamber 130.

[0043] In the present embodiment, a front-end module (FEM) may be disposed on one side of the load lock chamber 130. The front-end module (FEM) may include the loading port module 110 and the indexing module 120, and may be configured as an equipment front-end module (EFEM), for example.

[0044] As described above, a plurality of loading port modules 110 may be provided in the semiconductor manufacturing facility 100. Refer to Figures 1 to 3In the example, the plurality of load port modules may have a structure in which they are arranged in the horizontal direction D1, but the present disclosure is not limited thereto. The plurality of load port modules may also have a structure stacked in the vertical direction D3. When the plurality of load port modules are stacked in the vertical direction, the front-end module may be set as a vertically stacked EFEM.

[0045] The load lock chamber 130 may be used as a buffer chamber between the input port and the output port in the semiconductor manufacturing facility 100. That is, the load lock chamber 130 may be used to temporarily store unprocessed substrates or pre-processed substrates between the load port module 110 and the process chamber 150. Although not shown in Figures 1 to 3 it, the load lock chamber 130 may include a buffer table for temporarily storing the substrates therein.

[0046] A plurality of the load lock chambers 130 may be provided between the indexing module 120 and the transfer module 140. For example, two load lock chambers 130a and 130b (such as a first load lock chamber 130a and a second load lock chamber 130b) may be provided between the indexing module 120 and the transfer module 140.

[0047] The plurality of load lock chambers may be provided in a direction same as the arrangement direction of the plurality of load port modules. Referring to Figures 1 to 3 the example, the first load lock chamber 130a and the second load lock chamber 130b may be provided in a direction same as the arrangement direction of the three load port modules 110a, 110b, and 110c between the indexing module 120 and the transfer module 140, that is, in the horizontal direction D1. The first load lock chamber 130a and the second load lock chamber 130b may be provided as a symmetric single-layer structure in which they are provided to be spaced apart from each other in the horizontal direction.

[0048] However, this embodiment is not limited to the above example. The plurality of load lock chambers may be provided in a direction different from the arrangement direction of the plurality of load port modules. The first load lock chamber 130a and the second load lock chamber 130b may be provided in a direction different from the arrangement direction of the three load port modules 110a, 110b, and 110c between the indexing module 120 and the transfer module 140, that is, in the vertical direction D3. The first load lock chamber 130a and the second load lock chamber 130b may be provided as a double-layer structure in which they are provided to be spaced apart from each other in the vertical direction.

[0049] Either the first load lock chamber 130a or the second load lock chamber 130b may temporarily store an unprocessed substrate transferred from the indexing module 120 to the transfer module 140. In addition, the other load lock chamber may temporarily store a preprocessed substrate transferred from the transfer module 140 to the indexing module 120. However, the present disclosure is not limited to the above examples. The first load lock chamber 130a and the second load lock chamber 130b may be used together as a temporary storage for unprocessed substrates and a temporary storage for preprocessed substrates.

[0050] The load lock chamber 130 may change its internal environment to either a vacuum environment or an atmospheric pressure environment by using a gate valve or the like. Specifically, when the first transfer robot 122 of the indexing module 120 loads the substrate into the load lock chamber 130 or unloads the substrate from the load lock chamber 130, the load lock chamber 130 may form its internal environment in an environment that is the same as or similar to the internal environment of the indexing module 120. In addition, when the second transfer robot 142 of the transfer module 140 loads the substrate into the load lock chamber 130 or unloads the substrate from the load lock chamber 130, the load lock chamber 130 may form its internal environment in an environment that is the same as or similar to the internal environment of the transfer module 140. Therefore, the load lock chamber 130 can prevent a change in the internal air pressure state of the indexing module 120 or the internal air pressure state of the transfer module 140.

[0051] The transfer module 140 is disposed between the load lock chamber 130 and the process chamber 150 and may be provided as an interface such that the substrate can be transferred between the load lock chamber 130 and the process chamber 150.

[0052] The transfer module 140 may include a second module housing 141 and a second transfer robot 142. The second transfer robot 142 is disposed within the second module housing 141 and may transfer the substrate between the load lock chamber 130 and the process chamber 150. The internal environment of the second module housing 141 is provided as a vacuum environment, and the second transfer robot 142 may operate in the vacuum environment. One second transfer robot 142 may be disposed within the second module housing 141, but may be provided in a plural number, and is not limited thereto.

[0053] The transfer module 140 may be connected to the plurality of process chambers 150. To this end, the second module housing 141 may include a plurality of sides, and the second transfer robot 142 may freely rotate through each side of the second module housing 141 so that the substrate may be loaded into or unloaded from the plurality of process chambers 150.

[0054] The process chamber 150 is configured to process the substrate. When an unprocessed substrate is provided, the process chamber 150 may process the substrate and provide the preprocessed substrate to the load lock chamber 130 through the transfer module 140. A more detailed description of the process chamber 150 will be given later.

[0055] When the semiconductor manufacturing facility 100 includes the plurality of process chambers, the semiconductor manufacturing facility 100 may be configured to have a structure with a cluster platform. For example, the plurality of process chambers may be arranged in a cluster manner based on the transfer module 140, as Figure 1 illustrated, but the present embodiment is not limited thereto. When the semiconductor manufacturing facility 100 includes the plurality of process chambers, the semiconductor manufacturing facility 100 may be configured to have a structure with a quad platform. For example, the plurality of process chambers may be arranged in a quad manner based on the transfer module 140, as Figure 2 illustrated in the example of. Alternatively, when the semiconductor manufacturing facility 100 includes the plurality of process chambers, the semiconductor manufacturing facility 100 may be configured to have a structure with an in-line platform. For example, the plurality of process chambers may be arranged in an in-line manner based on the transfer module 140, as Figure 3 illustrated in the example of, and two different process chambers may be arranged in series while forming a corresponding relationship on both sides of the transfer module 140.

[0056] Although Figures 1 to 3 not shown in, the semiconductor manufacturing facility 100 may further include a control device. The control device is configured to control the overall operation of each module constituting the semiconductor manufacturing facility 100. For example, the control device may control the substrate transfer of the first transfer robot 122 or the second transfer robot 142, control the change of the internal environment of the load lock chamber 130, and control the overall substrate processing process of the process chamber 150.

[0057] The control device may include a processor for controlling each component constituting the semiconductor manufacturing facility 100, a network for wired or wireless communication with each component, one or more instructions related to controlling the functions or operations of each component, a storage device for storing processing options including the instructions, various data, and the like. In addition, the control device may further include a user interface, and the user interface includes an input device for allowing an operator to perform command input operations and the like to manage the semiconductor manufacturing facility 100, and an output device for visualizing and displaying the actuation state of the semiconductor manufacturing facility 100. The control device may be provided as a computing device for data processing, analysis, and command transmission.

[0058] The instructions may be provided in the form of a computer program or application. The computer program may include one or more instructions and may thus be stored in a computer-readable recording medium. The instructions may include code generated by a compiler, code executable by an interpreter, and the like. The storage device may be provided as one or more storage media selected from flash memory, HDD, SSD, cartridge memory, RAM, SRAM, ROM, EEPROM, PROM, magnetic memory, magnetic disk, and optical disk.

[0059] Next, the process chamber 150 will be described. The surface of the process chamber 150 may be made of corrosion-resistant aluminum formed with an anodized film, and its interior may be configured to be airtight. The process chamber 150 may be provided in plural in the semiconductor manufacturing facility 100, and the plurality of process chambers may be provided spaced apart from each other around the transfer module 140, but the present disclosure is not limited thereto, and the process chamber 150 may also be provided singly in the semiconductor manufacturing facility 100. The process chamber 150 may be provided in a cylindrical shape, but is not limited thereto, and may be provided in a shape other than a cylindrical shape.

[0060] As described above, the process chamber 150 may process the substrate. Hereinafter, the process chamber 150 will be defined as a substrate processing device, and the internal structure of the process chamber 150 will be described.

[0061] Figure 4 is an exemplary cross-sectional view showing the internal structure of a substrate processing device according to a first embodiment. According to Figure 4 , the substrate processing device 200 may include a chamber housing CH, a substrate support unit 210, a cleaning gas supply unit 220, a process gas supply unit 230, a showerhead unit 240, a plasma generation unit 250, a gasket unit 260, a baffle unit 270, a window module WM, and an antenna unit 280.

[0062] The substrate processing apparatus 200 can process the substrate W by using plasma. The substrate processing apparatus 200 can process the substrate W by a dry method. The substrate processing apparatus 200 can process the substrate W in a vacuum environment, for example. The substrate processing apparatus 200 can process the substrate W by using an etching process, but is not limited thereto, and the substrate processing apparatus 200 can also process the substrate W by using a deposition process or a cleaning process.

[0063] The chamber housing CH provides a space in which a process of processing the substrate W by using plasma, i.e., a plasma process, is performed. The surface of the chamber housing CH can be made of corrosion-resistant aluminum formed with an anodized film, and its interior can be configured to be airtight. The chamber housing CH can be set in a cylindrical shape, but is not limited thereto, and can be set in a shape other than the cylindrical shape. The chamber housing CH can have an exhaust hole 201 at its lower portion.

[0064] The exhaust hole 201 can be connected to an exhaust pipe line 203 on which a pump 202 is installed. The exhaust hole 201 can discharge reaction by-products generated during the plasma process and gases remaining in the chamber housing CH to the outside of the chamber housing CH through the exhaust pipe line 203. In this case, the internal space of the chamber housing CH can be decompressed.

[0065] An opening 204 can be formed to penetrate through the side wall of the chamber housing CH. The opening 204 can be provided as a passage through which the substrate W enters and exits the chamber housing CH. The opening 204 can be configured to be automatically opened and closed by, for example, a door assembly 205.

[0066] The door assembly 205 can include an outer door 206 and a door driver 207. The outer door 206 can open and close the opening 204 on the outer wall of the chamber housing CH. The outer door 206 can move in the height direction D3 of the substrate processing apparatus 200 under the control of the door driver 207. The door driver 207 can operate by using at least one element selected from a motor, a hydraulic cylinder, and a pneumatic cylinder.

[0067] The substrate support unit 210 is installed in the inner lower region of the chamber housing CH. The substrate support unit 210 can adsorb and support the substrate W by using electrostatic force. For example, the substrate support unit 210 can be provided as an electrostatic chuck (ESC), but is not limited thereto. The substrate support unit 210 can support the substrate W by using various other methods such as vacuum and mechanical clamping.

[0068] When the substrate support unit 210 is provided as an electrostatic chuck (ESC), the substrate support unit 210 may include a substrate 211 and a dielectric layer 212. The dielectric layer 212 is disposed on the substrate 211 and may adsorb and support the substrate W seated thereon. The substrate 211 may be formed of a material having excellent corrosion resistance and heat resistance. The substrate 211 may be provided as, for example, an aluminum body. The dielectric layer 212 may be formed of, for example, a ceramic material and may be provided as a ceramic disk.

[0069] Although not shown in Figure 4 the substrate support unit 210 may further include a bonding layer. The bonding layer may bond the substrate 211 to the dielectric layer 212. The bonding layer may include, for example, a polymer.

[0070] The ring structure 213 is disposed to surround an outer edge region of the dielectric layer 212. When a plasma process is performed within the chamber housing CH, the ring structure 213 may be used to concentrate ions on the substrate W. The ring structure 213 may be formed of a silicon material. For example, the ring structure 213 may be provided as a focusing ring.

[0071] Although not shown in Figure 4 the substrate processing apparatus 200 may further include an edge ring. The edge ring may be disposed below or outside the focusing ring. The edge ring may be used to prevent one side of the dielectric layer 212 from being damaged by plasma. The edge ring may be formed of an insulator material (such as ceramic or quartz).

[0072] A heating member 214 and a cooling member 215 are provided to maintain the substrate W at a process temperature when the substrate processing process is performed within the chamber housing CH. The heating member 214 may be installed within the dielectric layer 212 and may be provided as a heating wire. The cooling member 215 may be installed within the substrate 211 and may be provided as a cooling tube through which a refrigerant moves. A cooling device (refrigerator) 216 may supply the refrigerant to the cooling member 215. The cooling device 216 may use cooling water as the refrigerant, but is not limited thereto, and may also use helium (He) gas. Alternatively, the cooling device 216 may use both cooling water and helium gas as the refrigerant. Meanwhile, the heating member 214 may not be provided within the substrate support unit 210.

[0073] The cleaning gas supply unit 220 supplies a cleaning gas to the dielectric layer 212 or the ring structure 213 to remove particles remaining in the dielectric layer 212 or the ring structure 213. For example, the cleaning gas supply unit 220 may supply nitrogen (N2) as the cleaning gas.

[0074] The cleaning gas supply unit 220 may include a cleaning gas supply source 221 and a cleaning gas supply pipe 222. The cleaning gas supply pipe 222 may be connected to the space between the dielectric layer 212 and the ring structure 213. The cleaning gas supplied from the cleaning gas supply source 221 may move through the cleaning gas supply pipe 222 to the space between the dielectric layer 212 and the ring structure 213 to remove particles remaining in the edge portion of the dielectric layer 212 or the upper portion of the ring structure 213.

[0075] The process gas supply unit 230 supplies a process gas to the inner space of the chamber housing CH. The process gas supply unit 230 may supply the process gas to the inner space of the chamber housing CH through a hole formed by passing through the upper cover (i.e., the window module WM) of the chamber housing CH, but is not limited thereto. The process gas supply unit 230 may also supply the process gas to the inner space of the chamber housing CH through a hole formed by passing through the side wall of the chamber housing CH.

[0076] The process gas supply unit 230 may include a process gas supply source 231 and a process gas supply pipe 232. The process gas supply source 231 may supply a gas for processing the substrate W as the process gas. In the substrate processing apparatus 200, the process gas supply source 231 may be provided as a single unit, but may also be provided as a plurality of units without being limited thereto. When the process gas supply source 231 is provided as a plurality of units in the substrate processing apparatus 200, the plurality of process gas supply sources 231 may supply the same type of process gas, but are not limited thereto, and may supply different types of process gas.

[0077] The shower head unit 240 sprays the process gas provided from the process gas supply source 231 onto the entire area of the substrate W disposed in the inner space of the chamber housing CH. The shower head unit 240 may be connected to the process gas supply source 231 through the process gas supply pipe 232.

[0078] The shower head unit 240 is disposed in the inner space of the chamber housing CH and may include a plurality of gas supply holes 242. The plurality of gas supply holes 242 may be formed to penetrate the surface of the main body 241 in the vertical direction D3. The plurality of gas supply holes 242 may be formed to be spaced apart from each other at a constant interval on the main body 241. The shower head unit 240 may uniformly spray the process gas onto the entire area of the substrate W through the plurality of gas supply holes 242.

[0079] The showerhead unit 240 may be installed inside the chamber housing CH to face the substrate support unit 210 in the vertical direction D3. The showerhead unit 240 may be set to have a diameter larger than that of the dielectric layer 212, but is not limited thereto. The showerhead unit 240 may be set to have the same diameter as the dielectric layer 212. The showerhead unit 240 may be formed of a silicon material, but is not limited thereto. The showerhead unit 240 may also be formed of a metal material.

[0080] Although not shown in Figure 4 , the showerhead unit 240 may be divided into a plurality of units. For example, the showerhead unit 240 may be divided into three modules, such as a first head module, a second head module, and a third head module. The first head module may be disposed at a position corresponding to the central region of the substrate W. The second head module may be disposed to surround the outer edge of the first head module. The second head module may be disposed at a position corresponding to the intermediate region of the substrate W. The third head module may be disposed to surround the outer edge of the second head module. The third head module may be disposed at a position corresponding to the edge region of the substrate W.

[0081] The plasma generation unit 250 generates plasma from the gas remaining in the discharge space. In this case, the discharge space is the internal space of the chamber housing CH and may be the space formed between the showerhead unit 240 and the window module WM. Alternatively, the discharge space may be the space formed between the substrate support unit 210 and the showerhead unit 240. When the discharge space is the space formed between the substrate support unit 210 and the showerhead unit 240, the discharge space may be divided into a plasma region and a process region. The plasma region may be formed to be higher than the process region.

[0082] The plasma generation unit 250 may generate plasma in the discharge space by using an inductively coupled plasma (ICP) source. For example, the plasma generation unit 250 may generate plasma in the discharge space by using the substrate support unit 210 as the first electrode (lower electrode) and the antenna unit 280 as the second electrode (upper electrode) respectively, but the present embodiment is not limited thereto.

[0083] The plasma generation unit 250 can generate plasma in the discharge space by using a capacitively coupled plasma (CCP) source. For example, the plasma generation unit 250 can generate plasma in the discharge space by using the substrate support unit 210 as the first electrode (lower electrode) and the shower head unit 240 as the second electrode (upper electrode), respectively. A case where the plasma generation unit 250 is provided as an ICP source will be described herein. A case where the plasma generation unit 250 is provided as a CCP source will be described later.

[0084] The plasma generation unit 250 may include a first high-frequency power supply 251, a first transmission line 252, a second high-frequency power supply 253, and a second transmission line 254.

[0085] The first high-frequency power supply 251 applies RF power to the first electrode. The first high-frequency power supply 251 can be used as a plasma source for generating plasma in the chamber housing CH, but is not limited thereto. The first high-frequency power supply 251 can be used to control the characteristics of the plasma in the chamber housing CH together with the second high-frequency power supply 253.

[0086] A plurality of first high-frequency power supplies 251 can be provided in the substrate processing apparatus 200. In this case, the plasma generation unit 250 may include a first matching network electrically connected to each first high-frequency power supply. When frequency powers of different amplitudes are input from the plurality of first high-frequency power supplies, the first matching network can be used to match the frequency powers of different amplitudes and apply them to the first electrode.

[0087] The first transmission line 252 can connect the first electrode to GND. The first high-frequency power supply 251 can be mounted on the first transmission line 252, but is not limited thereto. The first transmission line 252 can connect the first electrode to the first high-frequency power supply 251. For example, the first transmission line 252 can be provided as an RF rod.

[0088] The second high-frequency power supply 253 applies RF power to the second electrode. The second high-frequency power supply 253 can be used to control the characteristics of the plasma in the chamber housing CH. For example, the second high-frequency power supply 253 can be used to control the ion bombardment energy in the chamber housing CH.

[0089] The second high-frequency power supply 253 can be provided in plural numbers in the substrate processing apparatus 200. In this case, the plasma generation unit 250 may include second matching networks each electrically connected to a respective second high-frequency power supply. When frequency powers of different amplitudes are input from the plurality of second high-frequency power supplies, the second matching networks can be used to match the frequency powers and apply them to the second electrode.

[0090] The second transmission line 254 connects the second electrode to GND. The second high-frequency power supply 253 can be mounted on the second transmission line 254.

[0091] The liner unit 260 can be defined as a wall liner and protects the interior of the chamber housing CH from arc discharge that occurs during the process of exciting process gases or impurities generated during the substrate processing. The liner unit 260 can be formed to cover the inner wall of the chamber housing CH.

[0092] The liner unit 260 may include a support ring 262 located on an upper portion of the body 261. The support ring 262 can project from the upper portion of the body 261 in an outward direction D1 and can be used to fix the body 261 to the chamber housing CH.

[0093] The baffle unit 270 is used to discharge unreacted gases or process by-products of the plasma in the chamber housing CH to the outside. The baffle unit 270 can be installed in a space between the inner wall of the chamber housing CH (or the liner unit 260) and the substrate support unit 210, and can be installed adjacent to the exhaust hole 201. The baffle unit 270 can be provided in an annular shape between the inner wall of the chamber housing CH and the substrate support unit 210.

[0094] The baffle unit 270 may include a plurality of slots passing through the body in the vertical direction D3 to control the flow of the process gas in the chamber housing CH. The baffle unit 270 can be formed of a material having etching resistance to minimize damage or deformation caused by free radicals or the like in the internal space of the chamber housing CH where plasma is generated. For example, the baffle unit 270 can be formed to include quartz.

[0095] The window module WM serves as an upper cover of the chamber housing CH, and the upper cover seals the internal space of the chamber housing CH. The window module WM may be separately provided from the chamber housing CH, but is not limited thereto, and may also be integrally provided with the chamber housing CH. The window module WM may be formed of a dielectric window made of an insulating material. For example, the window module WM may be formed of alumina. When the plasma process is performed in the internal space of the chamber housing CH, the window module WM may include a coating film on its surface to suppress the appearance of particles.

[0096] The antenna unit 280 is used to excite the process gas into plasma by generating a magnetic field and an electric field in the chamber housing CH. The antenna unit 280 may operate using RF power supplied from the second high-frequency power supply 253. The antenna unit 280 may be disposed on an upper portion of the chamber housing CH. For example, the antenna unit 280 may be disposed on the window module WM, but is not limited thereto, and the antenna unit 280 may be disposed on a side wall of the chamber housing CH.

[0097] The antenna unit 280 may include an antenna 282 inside or on the surface of the body 281. The antenna 282 may be provided to form a closed loop by using a coil. The antenna 282 may be formed in a spiral shape or various other shapes along the width direction D1 of the chamber housing CH.

[0098] The antenna unit 280 may be formed in a planar type, but is not limited thereto, and the antenna unit 280 may be formed in a cylindrical type. When the antenna unit 280 is formed in a planar type, it may be disposed on an upper portion of the chamber housing CH. When the antenna unit 280 is formed in a cylindrical type, it may be disposed to surround the outer side wall of the chamber housing CH.

[0099] has been referred to Figure 4 the case where the plasma generation unit 250 is provided as an ICP source has been described. Hereinafter, with reference to Figure 5 and Figure 6 the case where the plasma generation unit 250 is provided as a CCP source will be described. Hereinafter, the description of redundant parts compared with the case of Figure 4 will be omitted, and only the parts corresponding to the differences therefrom will be described.

[0100] Figure 5 is an exemplary cross-sectional view illustrating the internal structure of a substrate processing apparatus according to a second embodiment. Figure 6 is an exemplary cross-sectional view illustrating the internal structure of a substrate processing apparatus according to a third embodiment.

[0101] See Figure 5 and Figure 6 Figure 6 The substrate processing apparatus 200 may include a chamber housing CH, a substrate support unit 210, a cleaning gas supply unit 220, a process gas supply unit 230, a showerhead unit 240, a plasma generation unit 250, a gasket unit 260, a baffle unit 270, and a window module WM. That is, compared with the substrate processing apparatus 200 of Figure 4 Figure 4 , the substrate processing apparatus 200 of Figure 5 and Figure 6 Figure 6 does not include an antenna unit 280.

[0102]

[0102] The plasma generation unit 250 may include a first high-frequency power supply 251, a first transmission line 252, a second high-frequency power supply 253, and a second transmission line 254, but is not limited thereto. As shown in Figure 6 Figure 6 , the plasma generation unit 250 may include a first high-frequency power supply 251, a first transmission line 252, and a second transmission line 254. That is, compared with the plasma generation unit 250 of Figure 5 Figure 5 , the plasma generation unit 250 of Figure 6 Figure 6 does not include the second high-frequency power supply 253.

[0103]

[0103] In the case of the example according to Figure 4 Figure 4 , the second transmission line 254 may be connected to the antenna 282 of the antenna unit 280. The second high-frequency power supply 253 may apply RF power to the antenna 282 of the antenna unit 280. In the case of the example according to Figure 5 Figure 5 , the second transmission line 254 may be connected to the main body 241 of the showerhead unit 240. The second high-frequency power supply 253 may apply RF power to the main body 241 of the showerhead unit 240.

[0104]

[0104] In the case of the example according to Figure 5 Figure 5 , the second high-frequency power supply 253 may be installed on the second transmission line 254. In the case of the example according to Figure 6 Figure 6 , the second high-frequency power supply 253 may not be installed on the second transmission line 254. When the second high-frequency power supply 253 is installed on the second transmission line 254, the plasma generation unit 250 may apply multiple frequencies to the substrate processing apparatus 200.

[0105]

[0105] Next, a gas injection device will be described. Figure 7 Figure 7 is an exemplary view illustrating a gas injection device according to a first embodiment of the present disclosure. Referring to Figure 7 Figure 7 , the gas injection device 300 may include a gas supply unit 310 and a gas supply line 320.

[0106] First, an electrostatic chuck (ESC) 400 will be defined. The electrostatic chuck 400 may be configured to include a first plate 410, a second plate 420, and an adhesive layer 430. The first plate 410 may be formed of a metallic material. For example, the first plate 410 may be formed of an aluminum material. The first plate 410 may be provided as a substrate 211. The second plate 420 may be formed of a ceramic material. For example, the second plate 420 may be provided as a ceramic disk. The second plate 420 may be provided as a dielectric layer 212.

[0107] The adhesive layer 430 may be bonded to the first plate 410 and the second plate 420. The second plate 420 may be mounted on the first plate 410 via the adhesive layer 430. The adhesive layer 430 may be formed between the first plate 410 and the second plate 420.

[0108] The electrostatic chuck 400 is responsible for fixing the substrate W during the substrate processing and the thermal equilibrium in the chamber housing CH. Therefore, the electrostatic chuck 400 may play an important role in the yield of semiconductor products, i.e., the good rate.

[0109] However, the electrostatic chuck 400 is always exposed to the process gas, which may cause structural and functional problems due to the process gas.

[0110] First, when polymers generated during the substrate processing are accumulated on the surface of the electrostatic chuck 400, thermal efficiency problems may occur. This may reduce the efficiency of the thermal equilibrium, which is the main function of the electrostatic chuck 400.

[0111] Second, when the polymers are accumulated on the surface of the electrostatic chuck 400, arc discharge may be caused. When arc discharge occurs, the yield of semiconductor products may deteriorate due to defects in the semiconductor products, and the lifespan of the electrostatic chuck 400 may be reduced.

[0112] Third, the process gas may etch the adhesive layer 430. When the adhesive layer 430 is etched, the thermal conductivity of the electrostatic chuck 400 will be reduced. This may negatively affect the yield of the semiconductor products.

[0113] The gas injection device 300 may prevent process by-products from being deposited on components inside the substrate processing device 200. The gas injection device 300 may prevent the process gas from approaching components inside the substrate processing device 200. For example, the gas injection device 300 may prevent the polymers from being deposited on the electrostatic chuck 400 and prevent the process gas from approaching the electrostatic chuck 400.

[0114] The gas supply unit 310 may supply gas to the electrostatic chuck 400. The gas supply unit 310 may supply the gas to the electrostatic chuck 400 through the gas supply line 320. The gas provided by the gas supply unit 310 may prevent the polymer from being deposited on the electrostatic chuck 400. The gas provided by the gas supply unit 310 may prevent the process gas from approaching the electrostatic chuck 400. The gas provided by the gas supply unit 310 may not react with the process gas. For example, the gas provided by the gas supply unit 310 may be an inert gas (or non-reactive gas).

[0115] The gas supply line 320 may be connected to the gas supply unit 310. The gas supply line 320 may transfer the gas provided by the gas supply unit 310. The gas supply line 320 may be installed inside the electrostatic chuck 400. The gas supply line 320 may be installed inside the first plate 410.

[0116] The gas supply line 320 may form an outlet on one side of the electrostatic chuck 400. The outlet of the gas supply line 320 may be formed between the first plate 410 and the adhesive layer 420. Moreover, the outlet of the gas supply line 320 may be formed on one side of the first plate 410. Hereinafter, the outlet of the gas supply line 320 formed between the first plate 410 and the adhesive layer 420 is defined as the first outlet 510, and the outlet of the gas supply line 320 formed on the side of the first plate 410 is defined as the second outlet 520.

[0117] However, the present disclosure is not limited to the above examples, and the outlet of the gas supply line 320 may be formed only between the first plate 410 and the adhesive layer 420 or on the side of the first plate 410. For example, referring to Figure 8 , the outlet of the gas supply line 320 may be formed between the first plate 410 and the adhesive layer 420 and may not be formed on the side of the first plate 410. That is, the outlet of the gas supply line 320 may include only the first outlet 510. Figure 8 is a schematic diagram showing a gas injection device according to a second embodiment of the present invention.

[0118] A description will be given by referring back to Figure 7 for reference.

[0119] The gas supply line 320 may be formed as a plurality of pluralities. For example, the gas supply line 320 may include a first gas supply pipe 530 and a second gas supply pipe 540. The first gas supply pipe 530 may connect the gas supply unit 310 to a first outlet 510 of the gas supply line 320. The second gas supply pipe 540 may connect the gas supply unit 310 to a second outlet 520 of the gas supply line 320.

[0120] However, the present disclosure is not limited to the above examples, and the gas supply line 320 may be formed as a single one. For example, referring to Figure 9 , the first outlet 510 of the gas supply line 320 may be connected to an end of the gas supply line 320. The second outlet 520 of the gas supply line 320 may branch from a midpoint of the gas supply line 320. Figure 9 is an exemplary view showing a gas injection device according to a third embodiment of the present disclosure.

[0121] When the gas supply line 320 is formed as a plurality of pluralities, non-simultaneous control or independent control is possible. When the gas supply line 320 includes the first gas supply pipe 530 and the second gas supply pipe 540, the gas provided by the first gas supply pipe 530 and the gas provided by the second gas supply pipe 540 may be ejected at different times. Alternatively, one of the gas provided by the first gas supply pipe 530 and the gas provided by the second gas supply pipe 540 may be ejected with a time difference from the other gas. The cases of providing gas through the first gas supply pipe 530 and the cases of providing gas through the second gas supply pipe 540 may be controlled independently.

[0122] On the other hand, when the gas supply line 320 is formed as a single one, simultaneous control is possible. That is, the gas provided through the first outlet 510 and the gas provided through the second outlet 520 may be ejected simultaneously.

[0123] In addition to the first outlet 510 and the second outlet 520, the outlet of the gas supply line 320 may further include at least one third outlet. The third outlet may be formed between the adhesive layer 430 and the second plate 420. Alternatively, the third outlet may be formed on a side of the second plate 420. Additionally, the third outlets may be respectively formed between the adhesive layer 430 and the second plate 420 and on one side of the second plate 420.

[0124] A description will be given by referring back to Figure 7 for details.

[0125] The first outlet 510 and the second outlet 520 of the gas supply line 320 may be formed at different levels. In this case, being formed at different levels means being formed at different heights. The first outlet 510 of the gas supply line 320 may be formed at a higher level than the second outlet 520 of the gas supply line 320. That is, in the height direction D3 of the electrostatic chuck 400, the first outlet 510 of the gas supply line 320 may be formed at a higher position than the second outlet 520 of the gas supply line 320.

[0126] The second outlet 520 of the gas supply line 320 may be configured as a single one, but is not limited thereto, and may also be configured as a plurality. Refer to Figure 10 , the second outlet 520 of the gas supply line 320 may include an outlet (a) 520a and an outlet (b) 520b. Figure 10 is an exemplary view showing a gas injection device according to a fourth embodiment of the present disclosure.

[0127] The outlet (a) 520a may be formed at a different level from the outlet (b) 520b. The outlet (a) 520a may be formed at a higher level than the outlet (b) 520b. The outlet (a) 520a and the outlet (b) 520b may be arranged side by side in the third direction D3. That is, the outlet (a) 520a and the outlet (b) 520b may be arranged in the height direction of the first plate 410, but is not limited thereto, and the outlet (a) 520a may be formed at the same height as the outlet (b) 520b. The outlet (a) 520a and the outlet (b) 520b may be arranged side by side in the first direction D1. Alternatively, the outlet (a) 520a and the outlet (b) 520b may be arranged side by side in the second direction D2. That is, the outlet (a) 520a and the outlet (b) 520b may be arranged along the circumference of the first plate 410.

[0128] The outlet (a) 520a and the outlet (b) 520b may be connected to their respective gas supply pipes that are different from each other. The outlet (a) 520a may be connected to the gas supply pipe (a) 540a. The outlet (a) 520a may be connected to the gas supply unit 310 through the gas supply pipe (a) 540a. The outlet (b) 520b may be connected to the gas supply unit 310 through the gas supply pipe (b) 540b.

[0129] The (a) and (b) outlets 520a and 520b can be connected to the same gas supply pipe. That is, the (a) outlet 520a and the (b) outlet 520b can be connected to the second gas supply pipe 520. The (a) outlet 520a can be connected to the end of the second gas supply pipe 520. The (b) outlet 520b can branch from the midpoint of the second gas supply pipe 520.

[0130] A description will be given by referring back Figure 7 to it.

[0131] The electrostatic chuck 400 may include an elastomer that is in close contact with the upper surface of the first plate 410 and one side of the adhesive layer 430. Referring Figure 11 to it, the elastomer 550 may be an O-ring having a circular cross-section. Although not shown in Figure 11 it, the elastomer 550 may be an elastic band (E-band) having a rectangular cross-section.

[0132] The elastomer 550 can prevent the process gas from approaching the adhesive layer 430. The elastomer 550 can prevent the polymer from being deposited on the upper surface of the first plate 410 or the side of the adhesive layer 430 due to the process gas. However, even though the elastomer 550 is formed to be in close contact with the upper surface of the first plate 410 and the side of the adhesive layer 430, due to the elastic characteristics of the elastomer 550, a gap may be formed between the first plate 410 and the covering member 550 or between the adhesive layer 430 and the covering member 550. In addition, since the substrate processing process is performed several times, the elastomer 550 may be worn by free radicals or the like. Therefore, the gap may be formed between the first plate 410 and the covering member 550 or between the adhesive layer 430 and the covering member 550.

[0133] The gas supply unit 310 can inject the inert gas through the gas supply line 320. Referring Figure 12 to it, the inert gas IG can move along the gas supply line 320 to the first outlet 510 and the second outlet 520. The inert gas IG can flow into the internal space of the chamber housing CH through the first outlet 510 and the second outlet 520. The inert gas IG can move upward in the internal space of the chamber housing CH.

[0134] The gas injection device 300 can prevent the process gas PG or process by-products from penetrating into the space between the electrostatic chuck 400 and the ring structure 213 through the above movement of the inert gas IG. The gas injection device 300 can prevent the polymer from being deposited on the surfaces of the adhesive layer 430 and the first plate 410 by the inert gas IG. Figure 11 is a first exemplary view showing the effect of the gas injection device according to the first embodiment of the present disclosure. Figure 12 is a second exemplary view showing the effect of the gas injection device according to the first embodiment of the present disclosure.

[0135] The electrostatic chuck 400 may further include a coating 620. Refer to Figure 13 , the coating 620 may be formed on the surface of the adhesive layer 430. The surface of the adhesive layer 430 on which the coating 620 is formed may be the surface exposed to the outside among several surfaces of the adhesive layer 430. The surface of the adhesive layer 430 on which the coating 620 is formed may be one side among several surfaces of the adhesive layer 430.

[0136] Even when the inert gas is ejected through the first outlet 510 and the second outlet 520 during the substrate processing, there may be a situation where the penetration of the process gas cannot be completely prevented. When the coating 620 is formed on the surface of the adhesive layer 430 exposed to the outside, the adhesive layer 430 can be prevented from deforming due to the process gas, and the polymer can be prevented from being deposited on the adhesive layer 430. The coating 620 may be formed of a material that does not react with the process gas.

[0137] In addition, refer to Figure 14 , the inert gas IG discharged through the first outlet 510 may move into the internal space of the chamber housing CH after passing through the space between the first plate 410 and the coating 620. The inert gas IG discharged through the first outlet 510 and the inert gas IG discharged through the second outlet 520 can prevent the polymer from being deposited on or around the surface of the coating 620. Figure 13 is a first exemplary view showing the gas injection device according to the fifth embodiment of the present disclosure. Figure 14 is a second exemplary view showing the gas injection device according to the fifth embodiment of the present disclosure.

[0138] The gas injection device 300 can be installed in the substrate processing device 200. The gas injection device 300 can be installed in the substrate processing device 200 separately from the cleaning gas supply unit 220, but is not limited thereto. The gas injection device 300 can include the cleaning gas supply unit 220 and can also be installed in the substrate processing device 200. In this case, the first outlet 510 and the second outlet 520 of the gas supply line 320 can be connected to the cleaning gas supply pipe 222.

[0139] The gas injection device 300 can prevent the process gas from approaching or remaining on the surface of the electrostatic chuck 400 to prevent the polymer from accumulating. The gas injection device 300 can eject the gas by installing a flow path inside or around the electrostatic chuck 400, thereby blocking the entry of the process gas. The gas injection device 300 can remove the polymer around the electrostatic chuck 400 to prevent arc discharge and solve the yield problem of the semiconductor product. The gas injection device 300 can increase the durability of the semiconductor product by preventing the deterioration of the adhesive layer 430 caused by the process gas.

[0140] In the gas injection device 300, a flow path and an outlet can be installed in the first plate 410 so that an inert gas can flow, thereby preventing the process gas from approaching or remaining on the surface of the electrostatic chuck 400. The outlet of the flow path can be installed at the side portion of the first plate 410 and the lower end portion of the adhesive layer 430. As a result, the process gas can be prevented from approaching the first plate 410 and the adhesive layer 430. The outlet of the flow path can be formed in a portion other than the first plate 410 as needed.

[0141] When preventing the process gas from approaching the electrostatic chuck 400, the polymer can be prevented from being deposited on the surface of the electrostatic chuck 400. The polymer is a factor that may have a negative impact on the yield of the semiconductor product and thus must be removed.

[0142] When preventing the polymer from accumulating, the reduction in heat transfer capacity due to the use time of the electrostatic chuck 400 can be reduced. When maintaining the heat transfer capacity, the use time of the electrostatic chuck 400 can be increased, thereby increasing a large amount of durability.

[0143] The polymer accumulated on the surface of the electrostatic chuck 400 may cause an arc discharge by being bonded to the surface of the substrate W during the process. Therefore, when preventing the polymer from accumulating on the surface of the electrostatic chuck 400, the risk of arc can be reduced.

[0144] When preventing the process gas from approaching the adhesive layer 430, the deterioration of the adhesive layer 430 can be prevented. This can increase the durability of the electrostatic chuck 400 and maintain the thermal efficiency, thereby increasing the life of the substrate processing apparatus 200.

[0145] Although the embodiments of the present disclosure have been described with reference to the drawings, it will be apparent to those skilled in the art that the present disclosure can be implemented in other specific forms without departing from the technical concept and characteristics of the present disclosure. Therefore, the above embodiments are considered illustrative rather than restrictive in all respects.

Claims

1. A substrate processing device, comprising: a chamber housing providing a space in which a substrate is processed; an electrostatic chuck supporting the substrate; a showerhead unit, the showerhead unit providing a first gas to the space; a plasma generating unit generating plasma for processing the substrate by using the first gas; as well as a gas injection device for injecting a second gas from a surface of the electrostatic chuck into an inner space of the chamber housing, Wherein, the electrostatic chuck comprises: First board; a second plate disposed on the first plate; and an adhesive layer that bonds the first plate and the second plate to each other, and The gas injection device injects the second gas through an outlet formed between the first plate and the adhesive layer.

2. The substrate processing apparatus according to claim 1, wherein: The gas injection device also injects the second gas through an outlet formed on the surface of the first plate.

3. The substrate processing apparatus according to claim 1, wherein: The second gas is an inert gas.

4. The substrate processing apparatus according to claim 1, wherein: The second gas is a gas that does not react with the first gas.

5. The substrate processing apparatus according to claim 1, wherein: The gas injection device comprises: a gas supply unit that provides the second gas; and A gas supply line, connected to the gas supply unit, moves the second gas and includes the first outlet.

6. The substrate processing apparatus according to claim 5, wherein: The gas supply line also includes a second outlet formed on a surface of the first plate.

7. The substrate processing apparatus according to claim 6, wherein: The gas supply pipeline comprises: a first gas supply pipe connected to the first outlet in the first plate; and A second gas supply pipe is connected to the second outlet in the first plate.

8. The substrate processing apparatus according to claim 6, wherein: The gas supply line is connected to the first outlet in the first plate, and The second outlet is connected to a line branched from the gas supply line.

9. The substrate processing apparatus according to claim 6, wherein: The second outlet is formed as a plurality of second outlets.

10. The substrate processing apparatus according to claim 9, wherein: The plurality of second outlets are arranged along a height direction of the first plate.

11. The substrate processing apparatus according to claim 9, wherein: The plurality of second outlets are arranged along a circumference of the first plate.

12. The substrate processing apparatus according to claim 1, wherein: The gas injection device injects the second gas while the substrate is being processed.

13. The substrate processing apparatus according to claim 1, wherein: The electrostatic chuck further includes a coating layer formed on a surface of the adhesive layer exposed to the outside.

14. The substrate processing apparatus according to claim 13, wherein: The coating layer is formed of a material that does not react with the first gas.

15. A gas injection device, the gas injection device being provided in a substrate processing device together with an electrostatic chuck, the electrostatic chuck comprising a first plate, a second plate provided on the first plate, and an adhesive layer bonding the first plate and the second plate to each other, the gas injection device comprising: a gas supply unit that provides a second gas different from a first gas used for processing the substrate; and a gas supply line connected to the gas supply unit, moving the second gas, The gas injection device injects the second gas into an inner space of the substrate processing device through an outlet formed between the first plate and the adhesive layer. 16 . The gas injection device according to claim 15 , further injecting the second gas through an outlet formed on a surface of the first plate.

17. The gas injection device according to claim 15, wherein: The second gas is an inert gas.

18. The gas injection device according to claim 15, wherein: The second gas is a gas that does not react with the first gas.

19. The gas injection device according to claim 15, wherein: The gas injection device is used when the substrate is processed using plasma.

20. A substrate processing device comprising: a chamber housing providing a space in which a substrate is processed; an electrostatic chuck supporting the substrate; a showerhead unit, the showerhead unit providing a first gas to the space; a plasma generating unit generating plasma for processing the substrate by using the first gas; as well as a gas injection device for injecting a second gas from a surface of the electrostatic chuck into an inner space of the chamber housing, Wherein, the electrostatic chuck comprises: First board; a second plate disposed on the first plate; and an adhesive layer that bonds the first plate and the second plate to each other, The gas injection device comprises: a gas supply unit that provides the second gas; and a gas supply line connected to the gas supply unit, moving the second gas, and including a first outlet formed between the first plate and the adhesive layer and a second outlet formed on a surface of the first plate, The gas injection device injects the second gas through the first outlet and the second outlet, and The second gas is an inert gas.

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