Photoelectric packaging body structure and manufacturing method thereof

Abstract

The invention provides a photoelectric packaging body structure and a manufacturing method thereof, and the method comprises the following steps: providing an integrated electric chip comprising a plurality of electric chip units, forming a plurality of reflection chip structures based on the integrated electric chip, and enabling the reflection chip structures to be electric chip units of which at least one side wall is attached with a reflection part, a preset angle is formed between the reflecting surface of the reflecting part and the bottom surface of the electric chip unit; providing a substrate, and electrically connecting the reflection chip structure with the substrate; providing at least one semiconductor edge-emitting laser spaced from the reflection chip structure by a first preset distance, electrically connecting the semiconductor edge-emitting laser with the substrate, and enabling the reflection surface to be located on a light path of emergent light of the semiconductor edge-emitting laser; forming a protective shell above the substrate, wherein the protective shell is spaced from one side, far away from the reflection chip structure, of the semiconductor edge emitting laser by a second preset distance, and a light outlet is formed above the protective shell; and a light-transmitting component covering the light outlet is formed above the protective shell. According to the photoelectric packaging body structure and the manufacturing method thereof, the packaging size of the photoelectric packaging body structure is reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and particularly to an optoelectronic package structure and a manufacturing method thereof. Background Art

[0002] An optoelectronic package structure refers to co-packaging an integrated circuit chip and a laser on the same substrate, forming a co-package of the chip and the module, which has characteristics such as high integration, support for high data rates, and low cost.

[0003] Currently, as an important part of the optoelectronics industry, a semiconductor edge-emitting laser (EEL), as Figure 1 shown, is a schematic structural diagram of an edge-emitting semiconductor laser, including a P layer 01, N layers 02, 03, and a laser chip 04. It usually adopts traditional packaging processes. As Figure 2 shown, is a packaging structure diagram of a semiconductor edge-emitting laser, including a semiconductor laser chip 04, a substrate 05, a conductive base 06, bonding wires 07, a prism 08, a copper cup 09, a light-transmitting component 10, and an adhesive 11. By setting a conductive base on the surface of the substrate and arranging the laser chip on the surface of the conductive base facing away from the substrate, making the laser chip parallel to the conductive base, it ensures that the bonding wire connecting the laser chip and the conductive base is a planar structure, thereby improving the reliability of the bonding wire and the production and manufacturing efficiency. The emitted light of the laser chip is reflected by a reflecting component.

[0004] In addition, due to the relatively large volume of the integrated circuit chip, when packaging a semiconductor edge-emitting laser and an integrated circuit chip, a specific reflecting component needs to be set to reflect the light of the semiconductor edge-emitting laser, making it difficult to meet the requirements of high-density integrated packaging.

[0005] In view of this, there is an urgent need for a manufacturing method of an optoelectronic package structure that can integrate a semiconductor laser chip and an electronic chip while having a small package size. Summary of the Invention

[0006] In view of the above-mentioned disadvantages of the prior art, the purpose of the present invention is to provide an optoelectronic package structure and a manufacturing method thereof, which are used to solve the problem of the large package size of the integrated package of a semiconductor laser chip and an electronic chip in the prior art.

[0007] To achieve the above purpose and other related purposes, the present invention provides a manufacturing method of an optoelectronic package structure, including the following steps:

[0008] Provide an integrated circuit chip including a plurality of electrical chip units, and form a plurality of reflective chip structures based on the integrated circuit chip. The reflective chip structures are single electrical chip units with a reflective portion attached to at least one sidewall, and the reflective surface of the reflective portion forms a preset angle with the bottom surface of the electrical chip unit;

[0009] Provide a substrate and electrically connect the reflective chip structure to the substrate;

[0010] Provide at least one semiconductor edge-emitting laser, electrically connect the semiconductor edge-emitting laser to the substrate. The semiconductor edge-emitting laser is spaced from the reflective chip structure by a first preset distance, and the reflective surface of the reflective portion is located on the optical path of the light emitted by the semiconductor edge-emitting laser;

[0011] Form a protective shell above the substrate to surround the semiconductor edge-emitting laser and the reflective chip structure. The protective shell is spaced from the side of the semiconductor edge-emitting laser away from the reflective chip structure by a second preset distance, and a light outlet is provided above the protective shell;

[0012] Form a light-transmitting component above the protective shell to cover the light outlet.

[0013] Optionally, forming the reflective chip structure includes the following steps: dicing the integrated circuit chip to obtain a single electrical chip unit with a single-sloped sidewall, and forming the reflective portion on at least one sidewall of the electrical chip unit to obtain the reflective chip structure, wherein the single-sloped sidewall of the electrical chip unit serves as the reflective surface.

[0014] Optionally, forming the reflective chip structure includes the following steps: dicing the integrated circuit chip to obtain a single electrical chip unit with a stepped sidewall, and forming the reflective portion on at least one sidewall of the electrical chip unit to obtain the reflective chip structure, wherein the stepped sidewall of the electrical chip unit includes a vertical surface and an inclined surface, and the inclined surface serves as the reflective surface.

[0015] Optionally, forming the reflective chip structure includes the following steps: forming a plurality of grooves in the integrated circuit chip, forming a filling layer in the grooves and dicing the filling layer to obtain a single electrical chip unit, and forming the reflective portion on at least one sidewall of the electrical chip unit to obtain the reflective chip structure, wherein the sidewall of the diced filling layer serves as the reflective surface.

[0016] Optionally, dice the integrated circuit chip to obtain a single electrical chip unit, form an adhesive layer on the upper surface of the electrical chip unit, and adhere the reflective portion above the electrical chip unit to obtain the reflective chip structure, wherein the sidewall of the reflective portion serves as the reflective surface.

[0017] Optionally, the method for forming the reflective portion includes sputtering, coating, and molding.

[0018] Optionally, the reflective portion includes a highly reflective metal layer and its composite layer.

[0019] Optionally, the semiconductor edge-emitting laser includes a laser diode and a semiconductor laser chip.

[0020] Optionally, a plurality of pads are provided in the substrate, and the reflective chip structure is electrically connected to the substrate through the pads, and the semiconductor edge-emitting laser is electrically connected to the substrate through the pads.

[0021] Optionally, after electrically connecting the semiconductor edge-emitting laser to the substrate and before forming the protective case, it further includes the step of forming an underfill below the semiconductor edge-emitting laser and the reflective chip structure.

[0022] Optionally, the protective case is provided with a protruding portion, and the light-transmitting component is disposed above the protective case through the protruding portion.

[0023] The present invention also provides an optoelectronic package structure, which is manufactured by using the manufacturing method of any one of the optoelectronic package structures described above.

[0024] As described above, the optoelectronic package structure and its manufacturing method of the present invention have the following beneficial effects: The optoelectronic package structure and its manufacturing method of the present invention use the electrical chip unit with at least a reflective portion attached to the side wall as the reflective chip structure, and the reflective surface of the reflective portion forms a preset angle with the bottom surface of the electrical chip unit, and the reflective surface of the reflective portion is located on the optical path of the emitted light of the semiconductor edge-emitting laser. The emitted light of the semiconductor edge-emitting laser is directly reflected out of the light-transmitting component through the reflective portion, and no additional reflective component needs to be provided. That is, the optoelectronic package structure of the present invention not only realizes the integrated packaging of the integrated electrical chip and the semiconductor laser chip, but also reduces the packaging size of the optoelectronic package structure. In addition, the light-transmitting component is disposed on the protective case through the protruding portion on the protective case, avoiding the slipping of the light-transmitting component. Description of the Drawings

[0025] Figure 1 It shows a schematic structural diagram of an edge-emitting semiconductor laser in the prior art.

[0026] Figure 2 It shows a packaging structure diagram of an edge-emitting semiconductor laser in the prior art.

[0027] Figure 3 Shown is a schematic process flow diagram of the optoelectronic package structure of the present invention.

[0028] Figure 4 Shown is a schematic structural diagram of the integrated circuit chip of the present invention.

[0029] Figure 5 Shown is a schematic structural diagram of the present invention in which the integrated circuit chip is disposed on the dicing tape.

[0030] Figure 6 Shown is a schematic structural diagram of the present invention after dicing the integrated circuit chip.

[0031] Figure 7 Shown is a schematic structural diagram of the present invention after forming the reflective portion.

[0032] Figure 8 Shown is a schematic structural diagram of the present invention after the reflective chip structure is electrically connected to the substrate.

[0033] Figure 9 Shown is a schematic structural diagram of the present invention after the semiconductor edge-emitting laser is electrically connected to the substrate.

[0034] Figure 10 Shown is a schematic structural diagram of the present invention after forming the underfill.

[0035] Figure 11 Shown is a schematic structural diagram of the present invention after forming the protective shell.

[0036] Figure 12 Shown is a schematic structural diagram of the present invention after forming the light-transmitting component.

[0037] Figure 13 Shown is another schematic structural diagram of the present invention after dicing the integrated circuit chip.

[0038] Figure 14 Shown is another schematic structural diagram of the present invention after forming the reflective portion.

[0039] Figure 15 Shown is another schematic structural diagram of the present invention after the reflective chip structure is electrically connected to the substrate.

[0040] Figure 16 Shown is another schematic structural diagram of the present invention after forming the underfill.

[0041] Figure 17 Shown is another schematic structural diagram of the present invention after forming the protective shell.

[0042] Figure 18 Shown is another schematic structural diagram of the present invention after forming the light-transmitting component.

[0043] Figure 19 It shows a schematic structural view after forming a groove according to the present invention.

[0044] Figure 20 It shows a schematic structural view after forming a filling layer according to the present invention.

[0045] Figure 21 It shows a schematic structural view after scribing the filling layer according to the present invention.

[0046] Figure 22 It shows a third schematic structural view after forming a reflection part according to the present invention.

[0047] Figure 23 It shows a third schematic structural view after forming a bottom filling adhesive according to the present invention.

[0048] Figure 24 It shows a third schematic structural view after forming a protective case according to the present invention.

[0049] Figure 25 It shows a third schematic structural view after forming a light-transmitting component according to the present invention.

[0050] Figure 26 It shows a schematic structural view after the semiconductor edge-emitting laser is electrically connected to the substrate according to the present invention.

[0051] Figure 27 It shows a fourth schematic structural view after forming a bottom filling adhesive according to the present invention.

[0052] Figure 28 It shows a fourth schematic structural view after forming a light-transmitting component according to the present invention.

[0053] Figure 29 It shows a top view schematic of a partial structure of the optoelectronic package structure according to the present invention.

[0054] Element number description

[0055] 01 P layer

[0056] 02 N layer

[0057] 03 Excitation layer

[0058] 04 Semiconductor laser chip

[0059] 05 Substrate

[0060] 06 Conductive base

[0061] 07 Bonding wire

[0062] 08 Prism

[0063] 09 Copper cup

[0064] 10 Light-transmitting component

[0065] 11 Adhesive

[0066] 1 Integrated circuit chip

[0067] 11 Electric chip unit

[0068] 12 First solder ball

[0069] 13 Filling layer

[0070] 14 Groove

[0071] 2 Reflective chip structure

[0072] 21 Reflective part

[0073] 3 Cutting tape

[0074] 31 Fixed block

[0075] 4 Cutting tool

[0076] 5 Substrate

[0077] 51 Pad

[0078] 52 Solder

[0079] 6 Semiconductor edge-emitting laser

[0080] 61 Laser diode

[0081] 62 Semiconductor laser chip

[0082] 63 Second solder ball

[0083] 7 Protective case

[0084] 71 Solder block

[0085] 72 Protruding part

[0086] 73 Light outlet

[0087] 8 Underfill

[0088] 9 Light-transmitting component

[0089] 91 Adhesive

[0090] 10 Adhesive layer Specific implementation manners

[0091] The following specific embodiments illustrate the implementation manners of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification.

[0092] Please refer to Figures 1 to 29 . It should be noted that the structures, ratios, sizes, etc. shown in the drawings of this specification are only used to cooperate with the content disclosed in the specification for those familiar with this technology to understand and read, and are not used to limit the implementation conditions of the present invention. Therefore, they do not have substantial technical significance. Any modification of the structure, change of the proportional relationship, or adjustment of the size, without affecting the effects that the present invention can produce and the purposes that can be achieved, should still fall within the scope covered by the technical content disclosed in the present invention. At the same time, the terms such as "upper", "lower", "left", "right", "middle", and "one" cited in this specification are only for the convenience of clear narration and are not used to limit the scope of implementation of the present invention. The change or adjustment of their relative relationships, without substantial change in the technical content, should also be regarded as the scope in which the present invention can be implemented.

[0093] Embodiment 1

[0094] The present invention provides a method for manufacturing an optoelectronic package structure. As Figure 3 shown, it is a schematic diagram of the manufacturing process of the optoelectronic package structure, including the following steps:

[0095] S1: Provide an integrated electric chip including a plurality of electric chip units, and form a plurality of reflective chip structures based on the integrated electric chip. The reflective chip structure is a single electric chip unit with a reflective part attached to at least one side wall, and the reflective surface of the reflective part forms a preset angle with the bottom surface of the electric chip unit;

[0096] S2: Provide a substrate, and electrically connect the reflective chip structure to the substrate;

[0097] S3: Provide at least one semiconductor edge-emitting laser, and electrically connect the semiconductor edge-emitting laser to the substrate. The semiconductor edge-emitting laser is spaced from the reflective chip structure by a first preset distance, and the reflective surface of the reflective part is located on the optical path of the light emitted by the semiconductor edge-emitting laser;

[0098] S4: Form a protective shell around the semiconductor edge-emitting laser and the reflective chip structure above the substrate. The protective shell is spaced from the side of the semiconductor edge-emitting laser away from the reflective chip structure by a second preset distance, and there is a light outlet above the protective shell;

[0099] S5: Form a light-transmitting component covering the light outlet above the protective shell.

[0100] Specifically, please refer to Figures 4 - 7, perform the step S1, provide an integrated circuit chip 1 including a plurality of electric chip units 11, form a plurality of reflective chip structures 2 based on the integrated circuit chip 1, the reflective chip structure 2 being a single electric chip unit 11 with a reflective part 21 attached to at least one side wall, and the reflective surface of the reflective part 21 making a preset angle with the bottom surface of the electric chip unit 11.

[0101] Specifically, when the performance of the optoelectronic package structure is satisfied, the size and material of the integrated circuit chip 1 can be selected according to the actual situation and are not limited herein.

[0102] Specifically, as Figure 4 shown, it is a schematic structural diagram of the integrated circuit chip 1, and a first solder ball 12 is further provided below the electric chip unit 11.

[0103] Specifically, when the performance of the optoelectronic package structure is satisfied, the size and material of the first solder ball 12 can be selected according to the actual situation and are not limited herein.

[0104] As an example, forming the reflective chip structure 2 includes the following steps: dicing the integrated circuit chip 1 to obtain a single electric chip unit 11 with a single inclined side wall, and forming the reflective part 21 on at least one side wall of the electric chip unit 11 to obtain the reflective chip structure 2, wherein the single inclined side wall of the electric chip unit 11 serves as the reflective surface.

[0105] Specifically, as Figure 5 and Figure 6 shown, they are respectively a schematic structural diagram of setting the integrated circuit chip 1 on a cutting tape 3 and a schematic structural diagram of a structure after dicing the integrated circuit chip 1. Dicing the integrated circuit chip 1 includes the following steps: setting the integrated circuit chip 1 on the cutting tape 3 and performing a full cut on the integrated circuit chip 1 to obtain the electric chip unit 11 with a single inclined side wall.

[0106] Specifically, when the performance of the optoelectronic package structure is satisfied, the size and material of the cutting tape 3 can be selected according to the actual situation and are not limited herein.

[0107] Specifically, setting the integrated circuit chip 1 on the cutting tape 3 for cutting avoids breakage of the integrated circuit chip 1 caused by stress during the cutting process.

[0108] Specifically, fixing blocks 31 are further provided on both sides of the cutting tape 3 for ensuring that the cutting tape 3 is in an extended state and defining the dicing area on the integrated circuit chip 1.

[0109] Specifically, the method for dicing the integrated circuit chip 1 includes at least one of dicing with a dicing blade and laser cutting, or other suitable dicing methods.

[0110] Specifically, when using the method of dicing with a dicing blade to cut the integrated circuit chip 1, the dicing blade 4 can be selected to perform single-blade full cutting on the integrated circuit chip to obtain a single electric chip unit 11 with a single inclined sidewall.

[0111] Specifically, the range of the preset angle between the sidewall of the electric chip unit 11 and the bottom surface of the electric chip unit 11 is 0 degree to 90 degrees.

[0112] As an example, the reflection part 21 includes a high-reflection metal layer and its composite layer, or other suitable materials.

[0113] As an example, as Figure 7 shown, it is a schematic structural diagram after forming the reflection part 21. The method for forming the reflection part 21 includes sputtering, coating, or other suitable methods.

[0114] Specifically, after forming the reflection part 21, removing the cutting tape 3 can obtain a single reflection chip structure 2.

[0115] Specifically, please refer to Figure 8 , perform the step S2, provide a substrate 5, and electrically connect the reflection chip structure 2 to the substrate 5.

[0116] Specifically, under the condition of meeting the performance of the optoelectronic package structure, the size and material of the substrate 5 can be selected according to the actual situation, and no limitation is made here.

[0117] As an example, as Figure 8 shown, it is a schematic structural diagram after the reflection chip structure 2 is electrically connected to the substrate 5. The substrate 5 is provided with a plurality of pads 51, and the reflection chip structure 2 is electrically connected to the substrate 5 through the pads 51.

[0118] Specifically, the reflection chip structure 3 is electrically connected to the pad 51 in the substrate 5 through the first solder ball 12.

[0119] Specifically, solder 52 electrically connected to the pad 51 is further provided below the substrate 5.

[0120] Specifically, please refer to Figures 9 - 10, perform step S3, provide at least one semiconductor edge-emitting laser 6, electrically connect the semiconductor edge-emitting laser 6 to the substrate 5, the semiconductor edge-emitting laser 6 is spaced apart from the reflective chip structure 2 by a first preset distance, and the reflective surface of the reflecting portion 21 is located on the optical path of the light emitted by the semiconductor edge-emitting laser 6.

[0121] As an example, as Figure 9 shown, it is a schematic structural diagram after the semiconductor edge-emitting laser 6 is electrically connected to the substrate 5. The semiconductor edge-emitting laser 6 includes a laser diode 61 and a semiconductor laser chip 62.

[0122] Specifically, the laser diode 61 and the semiconductor laser chip 62 are arranged in parallel.

[0123] Specifically, the light emitted by the semiconductor edge-emitting laser 6 is emitted from the semiconductor laser chip 62 and exits from the side of the semiconductor edge laser emitter 6.

[0124] Specifically, the semiconductor edge-emitting laser 6 is spaced apart from the reflective chip structure 2 by a first preset distance.

[0125] Specifically, the semiconductor edge-emitting laser 6 and the reflective chip structure 2 are arranged corresponding to each other in the horizontal direction to ensure that the light emitted by the semiconductor edge-emitting laser 6 can irradiate the reflecting portion on the side wall of the reflective chip structure 2.

[0126] Specifically, when the performance of the optoelectronic package structure is satisfied, the spacing distance between the semiconductor edge-emitting laser 6 and the reflective chip structure 2 and the number of the semiconductor edge-emitting lasers 6 can be selected according to actual situations, and no limitation is made here.

[0127] As an example, a plurality of pads 51 are provided in the substrate 5, and the semiconductor edge-emitting laser 6 is electrically connected to the substrate 5 through the pads 51.

[0128] Specifically, the semiconductor edge-emitting laser 6 is electrically connected to the pad 51 in the substrate 5 through a second solder ball 63.

[0129] As an example, as Figure 10 shown, it is a schematic structural diagram after forming the underfill 8. After electrically connecting the semiconductor edge-emitting laser 63 to the substrate and before forming the protective shell 7, it further includes the step of forming the underfill 8 below the semiconductor edge-emitting laser 6 and the reflective chip structure 2.

[0130] Specifically, the underfill 8 serves to protect the semiconductor edge-emitting laser 6 and the reflective chip structure 2.

[0131] Specifically, when the performance of the optoelectronic package structure is satisfied, the size and material of the underfill 8 can be selected according to the actual situation and are not limited herein.

[0132] Specifically, please refer to Figures 11 - 12 , perform the steps S4 - S5 to form a protective shell 7 surrounding the semiconductor edge-emitting laser 6 and the reflective chip structure 2 above the substrate 5. The protective shell 7 is spaced from the side of the semiconductor edge-emitting laser 6 away from the reflective chip structure 2 by a second preset distance, and a light outlet 73 is provided above the protective shell 7; a light-transmitting component 9 covering the light outlet 73 is formed above the protective shell 7.

[0133] Specifically, as Figure 11 shown, it is a schematic structural diagram after forming the protective shell 7. The protective shell 7 is welded to the substrate 5 above through a solder bump 71.

[0134] Specifically, when the performance of the optoelectronic package structure is satisfied, the size, shape, and material of the protective shell 7 can be selected according to the actual situation and are not limited herein.

[0135] As an example, a protrusion 72 is provided on the protective shell 7, and the light-transmitting component 8 is disposed above the protective shell 7 through the protrusion 72.

[0136] Specifically, the light-transmitting component 8 is disposed above the protective shell 7 through the protrusion 72, preventing the light-transmitting component 8 from slipping off.

[0137] Specifically, the protective shell 7 is spaced from the side of the semiconductor edge-emitting laser 6 away from the reflective chip structure 2 by a second preset distance. While protecting the semiconductor edge-emitting laser 6 and the reflective chip structure 2, it also ensures the heat dissipation performance of the optoelectronic package structure.

[0138] As an example, as Figure 12 shown, it is a schematic structural diagram after forming the light-transmitting component 9. The light-transmitting component 9 is adhered to the protective shell above through an adhesive 91.

[0139] Specifically, the emitted light of the semiconductor edge-emitting laser 6 is reflected by the reflective chip structure 3 and emitted from the light-transmitting component 9.

[0140] Specifically, the integrated circuit chip 1 is diced to obtain a single electric chip unit 11 with a single-sloped sidewall, and the reflection portion 21 is formed on at least one sidewall of the electric chip unit 11 to obtain the reflective chip structure 2. Among them, the single-sloped sidewall of the electric chip unit 11 serves as the reflection surface, and the emitted light of the semiconductor edge-emitting laser 6 is directly reflected out of the light-transmitting component 9 through the reflection portion 21 located on the sidewall of the electric chip unit 11. There is no need to set an additional reflection component, which not only realizes the integrated packaging of the integrated circuit chip 1 and the semiconductor laser emitter 6, but also reduces the packaging size of the optoelectronic packaging body structure.

[0141] The manufacturing method of the optoelectronic packaging body structure in this embodiment dices the integrated circuit chip 1 to obtain a single electric chip unit 11 with a single-sloped sidewall, and forms the reflection portion 21 on at least one sidewall of the electric chip unit 11 to obtain the reflective chip structure 2. Among them, the single-sloped sidewall of the electric chip unit 11 serves as the reflection surface, and the emitted light of the semiconductor edge-emitting laser 6 is directly reflected out of the light-transmitting component 9 through the reflection portion 21 located on the sidewall of the electric chip unit 11. There is no need to set an additional reflection component, which not only realizes the integrated packaging of the integrated circuit chip 1 and the semiconductor laser emitter 6, but also reduces the packaging size of the optoelectronic packaging body structure.

[0142] Embodiment 2

[0143] This embodiment provides another manufacturing method of the optoelectronic packaging body structure. Please refer to Figures 13 - 18 , the manufacturing method of the optoelectronic packaging body structure in this embodiment is improved based on the manufacturing method of the optoelectronic packaging body structure in Embodiment 1. Forming the reflective chip structure 2 includes the following steps: dicing the integrated circuit chip 1 to obtain a single electric chip unit 11 with a stepped sidewall, and forming the reflection portion 21 on at least one sidewall of the electric chip unit 11 to obtain the reflective chip structure 2. Among them, the stepped sidewall of the electric chip unit 11 includes a vertical surface and an inclined surface, and the inclined surface serves as the reflection surface.

[0144] Specifically, the method of dicing the integrated circuit chip 1 includes at least one of dicing with a cutter and laser cutting or other suitable dicing methods.

[0145] Specifically, as Figures 13 - 14As shown, they are respectively another structural schematic diagram of dicing the integrated circuit chip 1 and another structural schematic diagram after forming the reflection part 2. When using a dicing saw to cut the integrated circuit chip 1, a dicing saw 4 can be selected to perform double-blade full cutting on the integrated circuit chip to obtain a single electric chip unit 11 with a stepped surface on its side wall, where the inclined surface in the stepped surface serves as the reflection surface.

[0146] Specifically, as Figures 15 - 18 shown, they are respectively another structural schematic diagram after electrically connecting the reflection chip structure 2 to the substrate 5, another structural schematic diagram after forming the underfill 8, another structural schematic diagram after forming the protective shell 7, and another structural schematic diagram after forming the light-transmitting component 9. The electrical connection of the reflection chip structure 2 to the substrate 5, the electrical connection of the semiconductor edge-emitting laser 6 to the substrate 5, and the subsequent formation of the underfill 8, the protective shell 7, and the light-transmitting component 9 can refer to Embodiment 1 and will not be elaborated here.

[0147] Specifically, the integrated circuit chip 1 is diced to obtain a single electric chip unit 11 with a stepped surface on its side wall, and a reflection part 21 is formed on at least one side wall of the electric chip unit 11 to obtain the reflection chip structure 2. Among them, the inclined surface in the stepped surface side wall of the electric chip unit 11 serves as the reflection surface, and the emitted light of the semiconductor edge-emitting laser 6 is directly reflected out of the light-transmitting component 9 through the reflection part 21 located on the side wall of the electric chip unit 11, without the need to set additional reflection components. This not only realizes the integrated packaging of the integrated circuit chip 1 and the semiconductor laser emitter 6 but also reduces the packaging size of the optoelectronic packaging body structure.

[0148] The manufacturing method of the optoelectronic packaging body structure in this embodiment dices the integrated circuit chip 1 to obtain a single electric chip unit 11 with a stepped surface on its side wall, and forms a reflection part 21 on at least one side wall of the electric chip unit 11 to obtain the reflection chip structure 2. Among them, the inclined surface in the stepped surface side wall of the electric chip unit 11 serves as the reflection surface, and the emitted light of the semiconductor edge-emitting laser 6 is directly reflected out of the light-transmitting component 9 through the reflection part 21 located on the side wall of the electric chip unit 11, without the need to set additional reflection components. This not only realizes the integrated packaging of the integrated circuit chip 1 and the semiconductor laser emitter 6 but also reduces the packaging size of the optoelectronic packaging body structure.

[0149] Embodiment 3

[0150] This embodiment provides a manufacturing method for a third optoelectronic packaging body structure. Please refer to Figures 19 - 25, the manufacturing method of the optoelectronic package structure described in this embodiment is improved based on the manufacturing method of the optoelectronic package structure described in Embodiment 1. The steps to form the reflective chip structure 2 include: forming a plurality of grooves 13 in the integrated circuit chip 1, forming a filling layer 14 in the grooves 13 and dicing the filling layer 14 to obtain a single electric chip unit 11, and forming the reflective portion 21 on at least one side wall of the electric chip unit 11 to obtain the reflective chip structure 2. Wherein, the side wall of the filling layer 14 after dicing serves as the reflective surface.

[0151] Specifically, as Figure 19 shown, it is a schematic structural diagram after forming the grooves 13. The method for forming the grooves 13 includes half-cutting or other suitable methods.

[0152] Specifically, when the performance of the optoelectronic package structure is satisfied, the depth of the grooves 13 can be selected according to actual situations and is not limited herein. The depth here refers to the vertical distance between the top and the bottom of the grooves 13.

[0153] Specifically, the material of the filling layer 14 includes epoxy resin or other suitable materials.

[0154] Specifically, as Figure 20 shown, it is a schematic structural diagram after forming the filling layer 14. The method for forming the filling layer 14 includes chemical vapor deposition, physical vapor deposition or other suitable methods.

[0155] Specifically, as Figure 21 shown, it is a schematic structural diagram after dicing the filling layer 14. The method for dicing the filling layer 14 includes cutting, patterning or other suitable methods.

[0156] As an example, as Figure 22 shown, it is the third schematic structural diagram after forming the reflective portion 21. The method for forming the reflective portion 21 includes sputtering, coating or other suitable methods.

[0157] Specifically, the formed reflective portion 21 covers the exposed surface of the filling layer 13.

[0158] Specifically, as Figures 23 - 25 shown, they are respectively the third schematic structural diagram after forming the bottom filling adhesive 8, the third schematic structural diagram after forming the protective shell 7, and the third schematic structural diagram after forming the light-transmitting component 9. The electrical connection of the reflective chip structure 2, the semiconductor edge-emitting laser 6 and the substrate 5 and the subsequent formation of the bottom filling adhesive 8, the protective shell 7, and the light-transmitting component 9 can refer to Embodiment 1 and will not be elaborated herein.

[0159] Specifically, by forming a plurality of the grooves 13 in the integrated circuit chip 1, forming the filling layer 14 in the grooves 13 and dicing the filling layer 14 to obtain a single electric chip unit 11, and forming the reflection part 21 on at least one side wall of the electric chip unit 11 to obtain the reflection chip structure 2, wherein the side wall of the filling layer 14 after dicing serves as the reflection surface. By forming the filling layer 14, the risk of the integrated circuit chip 1 generating chips during dicing is avoided. The emitted light of the semiconductor edge-emitting laser 6 is directly reflected out of the light-transmitting component 9 through the reflection part 21, and no additional reflection component needs to be provided. Not only is the integrated packaging of the integrated circuit chip 1 and the semiconductor laser emitter 6 realized, but also the packaging size of the optoelectronic packaging body structure is reduced.

[0160] The manufacturing method of the optoelectronic packaging body structure of this embodiment includes forming a plurality of the grooves 13 in the integrated circuit chip 1, forming the filling layer 14 in the grooves 13 and dicing the filling layer 14 to obtain a single electric chip unit 11, and forming the reflection part 21 on at least one side wall of the electric chip unit 11 to obtain the reflection chip structure 2, wherein the side wall of the filling layer 14 after dicing serves as the reflection surface. By forming the filling layer 14, the risk of the integrated circuit chip 1 generating chips during dicing is avoided. The emitted light of the semiconductor edge-emitting laser 6 is directly reflected out of the light-transmitting component 9 through the reflection part 21, and no additional reflection component needs to be provided. Not only is the integrated packaging of the integrated circuit chip 1 and the semiconductor laser emitter 6 realized, but also the packaging size of the optoelectronic packaging body structure is reduced.

[0161] Embodiment 4

[0162] This embodiment provides a manufacturing method for a fourth optoelectronic packaging body structure. Please refer to Figures 26 - 28 , the manufacturing method of the optoelectronic packaging body structure described in this embodiment is improved based on the manufacturing method of the optoelectronic packaging body structure described in Embodiment 1. Forming the reflection chip structure 2 includes the following steps: dicing the integrated circuit chip 1 to obtain a single electric chip unit 11, forming an adhesion layer 10 on the upper surface of the electric chip unit 11, and adhering the reflection part 21 above the electric chip unit 11 to obtain the reflection chip structure 2, wherein the side wall of the reflection part 21 serves as the reflection surface.

[0163] Specifically, the method for dicing a plurality of the electric chip units 11 in the integrated circuit chip 1 includes laser cutting or other suitable methods.

[0164] As an example, such as Figures 26 - 27As shown, they are respectively a schematic structural diagram after the semiconductor edge-emitting laser 6 is electrically connected to the substrate 5 and a fourth schematic structural diagram after the bottom filling adhesive 8 is formed. The method for forming the reflection part 21 includes die molding or other suitable methods.

[0165] Specifically, the formed reflection part 21 is clamped above the electric chip unit 11.

[0166] Specifically, the reflection part 21 further includes a reflection grating.

[0167] Specifically, as Figure 27 shown, it is a fourth schematic structural diagram after the light-transmitting component 9 is formed. For the electrical connection of the reflection chip structure 2, the semiconductor edge-emitting laser 6 and the substrate 5 and the subsequent formation of the bottom filling adhesive 8, the protective shell 7, and the light-transmitting component 9, reference can be made to Embodiment 1, which will not be elaborated here.

[0168] Specifically, by dicing the integrated electric chip 1, an adhesion layer 10 is formed on the upper surface of the electric chip unit 11, and the reflection part 21 is adhered above the electric chip unit 11 to obtain the reflection chip structure 2, which broadens the process idea for forming the reflection chip structure. Among them, the side wall of the reflection part 21 serves as the reflection surface, and the emitted light of the semiconductor edge-emitting laser 6 is directly reflected out of the light-transmitting component 9 through the reflection part 21, eliminating the need to set up additional reflection components and reducing the packaging size of the optoelectronic package structure.

[0169] The manufacturing method of the optoelectronic package in this embodiment obtains the reflection chip structure 2 by dicing the integrated electric chip 1, forming an adhesion layer 10 on the upper surface of the electric chip unit 11, and adhering the reflection part 21 above the electric chip unit 11, which broadens the process idea for forming the reflection chip structure. Among them, the side wall of the reflection part 21 forms a preset angle with the bottom surface of the reflection part 21, and the emitted light of the semiconductor edge-emitting laser 6 is directly reflected out of the light-transmitting component 9 through the reflection part 21, eliminating the need to set up additional reflection components and reducing the packaging size of the optoelectronic package structure.

[0170] Embodiment Five

[0171] This embodiment provides an optoelectronic package structure, which is manufactured by using the manufacturing method of the optoelectronic package structure described in any one of Embodiments 1 to 4.

[0172] Specifically, as Figure 12 、 Figure 18 、 Figure 25 、 Figure 28 and Figure 29As shown, they are respectively a schematic structural diagram after forming the light-transmitting component 9, another schematic structural diagram after forming the light-transmitting component 9, a third schematic structural diagram after forming the light-transmitting component 9, a fourth schematic structural diagram after forming the light-transmitting component 9, and a top view schematic diagram of a partial structure of the optoelectronic package structure. The optoelectronic package structure includes: a substrate 5; a reflective chip structure 2 electrically connected to the substrate 5. The reflective chip structure 2 includes at least an electrical chip unit 11 with a reflective portion 21 attached to its sidewall. The reflective surface of the reflective portion 21 forms a preset angle with the bottom surface of the electrical chip unit 11; a semiconductor edge-emitting laser 6 electrically connected to the substrate 5. The semiconductor edge-emitting laser 6 surrounds the reflective chip structure 2 and is spaced from the reflective chip structure 2 by a first preset distance; a protective shell 7 disposed above the substrate 5 and surrounding the semiconductor edge-emitting laser 6 and the reflective chip structure 2. The protective shell 7 is spaced from one side of the semiconductor edge-emitting laser 6 away from the reflective chip structure 2 by a second preset distance. An optical output port 73 is formed above the protective shell 7; a light-transmitting component 9 disposed above the protective shell 7 and covering the optical output port 73.

[0173] Specifically, a plurality of pads 51 are provided in the substrate 5. The reflective chip structure 2 is electrically connected to the substrate 5 through the pads 51, and the semiconductor edge-emitting laser 6 is electrically connected to the substrate 5 through the pads 51.

[0174] Specifically, the emitted light of the semiconductor edge-emitting laser 6 is reflected out of the light-transmitting component 9 through the reflective portion 21 in the reflective chip structure 2.

[0175] The optoelectronic package of this embodiment realizes the integrated packaging of the integrated electrical chip 1 and the semiconductor laser emitter 6. The emitted light of the semiconductor edge-emitting laser 6 is directly reflected out of the light-transmitting component 9 through the reflective portion 21, and no additional reflective component needs to be provided, reducing the size of the optoelectronic package structure.

[0176] In summary, the optoelectronic package structure and its manufacturing method of the present invention use an electrical chip unit with at least a reflective portion attached to its sidewall as the reflective chip structure, and the reflective surface of the reflective portion forms a preset angle with the bottom surface of the electrical chip unit. The reflective surface of the reflective portion is located on the optical path of the emitted light of the semiconductor edge-emitting laser. The emitted light of the semiconductor edge-emitting laser is directly reflected out of the light-transmitting component through the reflective portion, and no additional reflective component needs to be provided. That is, the optoelectronic package structure of the present invention not only realizes the integrated packaging of the integrated electrical chip and the semiconductor laser chip, but also reduces the packaging size of the optoelectronic package structure. In addition, the light-transmitting component is disposed on the protective shell through the protruding portion on the protective shell, avoiding the light-transmitting component from slipping. Therefore, the present invention effectively overcomes various shortcomings in the prior art and has high industrial utilization value.

[0177] The above embodiments are only illustrative of the principles and effects of the present invention and are not intended to limit the present invention. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical idea disclosed by the present invention should still be covered by the claims of the present invention.

Claims

1. A manufacturing method of an optoelectronic package structure, characterized in that Including the following steps: Providing an integrated circuit chip including a plurality of electric chip units, forming a plurality of reflective chip structures based on the integrated circuit chip, the reflective chip structures being single electric chip units with a reflective part attached to at least one side wall, and a reflection surface of the reflective part making a preset angle with a bottom surface of the electric chip unit; Providing a substrate, and electrically connecting the reflective chip structures to the substrate; Providing at least one semiconductor edge-emitting laser, electrically connecting the semiconductor edge-emitting laser to the substrate, the semiconductor edge-emitting laser being spaced from the reflective chip structures by a first preset distance, and the reflection surface of the reflective part being located on an optical path of light emitted by the semiconductor edge-emitting laser; Forming a protective shell surrounding the semiconductor edge-emitting laser and the reflective chip structures above the substrate, the protective shell being spaced from a side of the semiconductor edge-emitting laser away from the reflective chip structures by a second preset distance, and a light outlet being provided above the protective shell; Forming a light-transmitting component covering the light outlet above the protective shell.

2. The manufacturing method of the optoelectronic package structure according to claim 1, characterized in that: Forming the reflective chip structures includes the following steps: dicing the integrated circuit chip to obtain single electric chip units with single-inclined side walls, and forming the reflective parts on at least one side wall of the electric chip units to obtain the reflective chip structures, wherein the single-inclined side walls of the electric chip units serve as the reflection surfaces.

3. The manufacturing method of the optoelectronic package structure according to claim 1, characterized in that: Forming the reflective chip structures includes the following steps: dicing the integrated circuit chip to obtain single electric chip units with stepped side walls, and forming the reflective parts on at least one side wall of the electric chip units to obtain the reflective chip structures, wherein the stepped side walls of the electric chip units include vertical surfaces and inclined surfaces, and the inclined surfaces serve as the reflection surfaces.

4. The manufacturing method of the optoelectronic package structure according to claim 1, wherein: Forming the reflective chip structures includes the following steps: forming a plurality of grooves in the integrated circuit chip, forming a filling layer in the grooves and dicing the filling layer to obtain single electric chip units, and forming the reflective parts on at least one side wall of the electric chip units to obtain the reflective chip structures, wherein side walls of the filling layer after dicing serve as the reflection surfaces.

5. The manufacturing method of the optoelectronic package structure according to claim 1, characterized in that: Dicing the integrated circuit chip to obtain single electric chip units, forming an adhesion layer on an upper surface of the electric chip units, and adhering the reflective parts above the electric chip units to obtain the reflective chip structures, wherein side walls of the reflective parts serve as the reflection surfaces.

6. The manufacturing method of the optoelectronic package structure according to claim 1, characterized in that: Methods for forming the reflective parts include sputtering, coating, and molding with a mold.

7. The manufacturing method of the optoelectronic package structure according to claim 1, wherein: The reflective parts include highly reflective metal layers and composite layers thereof.

8. The manufacturing method of the optoelectronic package structure according to claim 1, wherein: The semiconductor edge-emitting lasers include laser diodes and semiconductor laser chips.

9. The manufacturing method of the optoelectronic package structure according to claim 1, characterized in that: A plurality of pads are provided in the substrate, the reflective chip structures are electrically connected to the substrate through the pads, and the semiconductor edge-emitting lasers are electrically connected to the substrate through the pads.

10. The manufacturing method of the optoelectronic package structure according to claim 1, characterized in that: After electrically connecting the semiconductor edge-emitting lasers to the substrate and before forming the protective shell, it further includes a step of forming underfill glue under the semiconductor edge-emitting lasers and the reflective chip structures.

11. The manufacturing method of the optoelectronic package structure according to claim 1, characterized in that: The protective shell is provided with a protruding portion, and the light-transmitting component is arranged above the protective shell through the protruding portion.

12. An optoelectronic package structure, characterized in that, The optoelectronic package structure is fabricated by using the fabrication method of the optoelectronic package structure according to any one of claims 1 to 11.

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