Semiconductor Device and Electronic Equipment

Abstract

The semiconductor device and electronic device of the present disclosure include: a substrate; a nucleation layer located on one side of the substrate; a channel layer located on the side of the nucleation layer away from the substrate; a barrier layer located on the side of the channel layer away from the nucleation layer; a buffer layer located between the nucleation layer and the channel layer, the buffer layer includes a doped superlattice layer, and the doped superlattice layer includes a carbon-doped aluminum gallium nitride layer and a p-type polarization-doped aluminum gallium nitride layer.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor technology, and particularly to a semiconductor device and an electronic device. Background Art

[0002] As an important third-generation wide-bandgap semiconductor material, gallium nitride-based semiconductor materials have the characteristics of large bandgap, high breakdown field strength, high mobility, direct bandgap, high temperature resistance, stable chemical properties, and being easy to form various heterojunction structures. Gallium nitride-based heterojunction thin films have been widely used in semiconductor devices such as light-emitting diodes (LEDs) and high electron mobility transistors (HEMTs) for radio frequency / power devices.

[0003] Due to the small size and high price of gallium nitride substrates, currently commercially available gallium nitride device thin films are mainly grown on sapphire, silicon, and silicon carbide substrates by heteroepitaxy. The mainstream epitaxial equipment for growing commercial gallium nitride materials is metalorganic chemical vapor deposition equipment (MOCVD). The gallium nitride-based thin films grown by MOCVD have an intrinsic weak n-type background electron concentration in the order of 10 17 cm -3 magnitude. The weak n-type of the intrinsic gallium nitride thin film leads to a leakage risk for high voltages. For gallium nitride-based HEMT devices, obtaining a high-resistance gallium nitride-based buffer layer is one of the key technologies for achieving high-voltage and high-frequency operation of the device.

[0004] By incorporating carbon impurity atoms into aluminum gallium nitride thin films through low-temperature growth or introducing external doping sources, the growth of a high-resistance aluminum gallium nitride buffer layer can be achieved. However, it is difficult to achieve high resistance when the carbon doping concentration is low, and too many carbon impurity defect states capture electrons under high voltage, resulting in an increase in the on-resistance of the device and affecting the high-frequency electrical properties of the device; moreover, carbon doping achieves high resistance through defect compensation of background electrons, but the introduction of carbon doping defects in aluminum gallium nitride will lead to a reduction in the crystal quality of the buffer layer. Summary of the Invention

[0005] Embodiments of the present disclosure provide a semiconductor device and an electronic device, which can obtain a buffer layer with high resistance and low defect density, reduce high-voltage leakage of the device, and improve the high-frequency electrical properties of the device.

[0006] The semiconductor device and the electronic device provided by the embodiments of the present disclosure are specifically as follows:

[0007] On the one hand, embodiments of the present disclosure provide a semiconductor device, including:

[0008] A substrate;

[0009] A nucleation layer located on one side of the substrate;

[0010] A channel layer, located on a side of the nucleation layer away from the substrate;

[0011] A barrier layer, located on a side of the channel layer away from the nucleation layer;

[0012] A buffer layer, located between the nucleation layer and the channel layer, the buffer layer includes a doped superlattice layer, and the doped superlattice layer includes a carbon-doped aluminum gallium nitride layer and a p-type polarization-doped aluminum gallium nitride layer.

[0013] In some embodiments, in the above semiconductor device provided by the embodiments of the present disclosure, the doped superlattice layer includes at least one doped superlattice unit, the doped superlattice unit includes a plurality of alternately arranged carbon-doped aluminum gallium nitride layers and the p-type polarization-doped aluminum gallium nitride layers, and the aluminum components of the carbon-doped aluminum gallium nitride layers in the same doped superlattice unit are the same.

[0014] In some embodiments, in the above semiconductor device provided by the embodiments of the present disclosure, there are a plurality of the doped superlattice units, and the aluminum components of the carbon-doped aluminum gallium nitride layers in different doped superlattice units are different.

[0015] In some embodiments, in the above semiconductor device provided by the embodiments of the present disclosure, in a direction away from the substrate, the aluminum components of the carbon-doped aluminum gallium nitride layers in different doped superlattice units gradually decrease.

[0016] In some embodiments, in the above semiconductor device provided by the embodiments of the present disclosure, the number of the carbon-doped aluminum gallium nitride layers in the same doped superlattice unit is 2 to 200.

[0017] In some embodiments, in the above semiconductor device provided by the embodiments of the present disclosure, the buffer layer further includes an aluminum nitride layer, and the aluminum nitride layer and the doped superlattice layer are periodically stacked to form a component superlattice layer as the buffer layer.

[0018] In some embodiments, in the above semiconductor device provided by the embodiments of the present disclosure, the doped superlattice layer includes at least one doped superlattice unit, and the doped superlattice unit includes a plurality of alternately arranged carbon-doped aluminum gallium nitride layers and the p-type polarization-doped aluminum gallium nitride layers;

[0019] The component superlattice layer includes at least one component superlattice unit, the component superlattice unit includes a plurality of repeating layers, the repeating layer includes one aluminum nitride layer and at least one doped superlattice unit, and the aluminum components of the carbon-doped aluminum gallium nitride layers in each repeating layer are the same.

[0020] In some embodiments, in the above-mentioned semiconductor device provided by the embodiments of the present disclosure, there are multiple component superlattice units, and the aluminum components of the carbon-doped aluminum gallium nitride layers in different component superlattice units are different.

[0021] In some embodiments, in the above-mentioned semiconductor device provided by the embodiments of the present disclosure, the thickness of the aluminum nitride layer is 1 nm to 10 nm, and the number of the repeating layers of one component superlattice layer is 2 to 100.

[0022] In some embodiments, in the above-mentioned semiconductor device provided by the embodiments of the present disclosure, the difference between the aluminum component of the adjacent carbon-doped aluminum gallium nitride layer and the average aluminum component of the p-type polarization-doped aluminum gallium nitride layer is within ±1%.

[0023] In some embodiments, in the above-mentioned semiconductor device provided by the embodiments of the present disclosure, the change range of the aluminum component in the p-type polarization-doped aluminum gallium nitride layer is 1% to 10%.

[0024] In some embodiments, in the above-mentioned semiconductor device provided by the embodiments of the present disclosure, the aluminum component of the carbon-doped aluminum gallium nitride layer is 1% to 95%, and the carbon doping concentration is 10 18 cm -3 ~10 20 cm -3 。

[0025] In some embodiments, in the above-mentioned semiconductor device provided by the embodiments of the present disclosure, the thickness of the carbon-doped aluminum gallium nitride layer is 2 nm to 40 nm, and the thickness of the p-type polarization-doped aluminum gallium nitride layer is 2 nm to 40 nm.

[0026] On the other hand, the embodiments of the present disclosure provide an electronic device, including the above-mentioned semiconductor device provided by the embodiments of the present disclosure.

[0027] The beneficial effects of the present disclosure are as follows:

[0028] The semiconductor device and electronic device provided by the embodiments of the present disclosure include: a substrate; a nucleation layer located on one side of the substrate; a channel layer located on the side of the nucleation layer away from the substrate; a barrier layer located on the side of the channel layer away from the nucleation layer; a buffer layer located between the nucleation layer and the channel layer, the buffer layer includes a doped superlattice layer, and the doped superlattice layer includes a carbon-doped aluminum gallium nitride layer and a p-type polarization-doped aluminum gallium nitride layer. Compared with the related art that uses a carbon-doped aluminum gallium nitride layer as the buffer layer, the present disclosure uses a doped superlattice layer including a carbon-doped aluminum gallium nitride layer and a p-type polarization-doped aluminum gallium nitride layer as the buffer layer, reducing the average carbon doping concentration of the buffer layer, thereby obtaining a buffer layer with a high resistance value and a low defect density. Moreover, if the average carbon doping concentration is low, it can improve the capture of channel electrons by carbon doping defect energy levels in the buffer layer under high voltage, thereby reducing the on-resistance of the device and further improving the high-frequency electrical properties; in addition, the carbon-doped aluminum gallium nitride layer and the p-type polarization-doped aluminum gallium nitride layer jointly reduce the background electron concentration and thus can reduce the high-voltage leakage risk. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 FIG. is a schematic diagram of an epitaxial structure of a semiconductor device provided by an embodiment of the present disclosure;

[0030] Figure 2 is Figure 1 a schematic diagram of an epitaxial structure of a buffer layer in the semiconductor device shown;

[0031] Figure 3 is Figure 2 a diagram showing the relationship between the aluminum composition and the thickness in the buffer layer shown;

[0032] Figure 4 FIG. is another schematic diagram of an epitaxial structure of a semiconductor device provided by an embodiment of the present disclosure;

[0033] Figure 5 is Figure 1 a schematic diagram of another epitaxial structure of a buffer layer in the semiconductor device shown;

[0034] Figure 6 is Figure 5 a diagram showing the relationship between the aluminum composition and the thickness in the buffer layer shown;

[0035] Figure 7 FIG. is another schematic diagram of an epitaxial structure of a semiconductor device provided by an embodiment of the present disclosure;

[0036] Figure 8 FIG. is another schematic diagram of an epitaxial structure of a semiconductor device provided by an embodiment of the present disclosure. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0037] To make the objectives, technical solutions, and advantages of the embodiments of the present disclosure clearer, the technical solutions of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present disclosure. It should be noted that the embodiments described in the present disclosure should not be construed as being limited to the specific shapes of the regions shown in the present disclosure, but include deviations in shape caused by, for example, manufacturing. For example, a region illustrated or described as flat may typically have rough and / or non-linear features; the sharp corners illustrated may be rounded, etc. Also, the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. To keep the following description of the embodiments of the present disclosure clear and concise, detailed descriptions of known functions and known components are omitted in the present disclosure.

[0038] Unless otherwise defined, the technical terms or scientific terms used herein shall have the ordinary meanings as understood by those of ordinary skill in the art to which the present disclosure pertains. The terms "first", "second", and similar terms used in the specification and claims of the present disclosure do not denote any order, quantity, or importance, but are only used to distinguish different components. The terms "comprising", "including", or similar terms mean that the elements or items appearing before the term cover the elements or items listed after the term and their equivalents, without excluding other elements or items. The terms "connected" or "coupled" or similar terms are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. The terms "inner", "outer", "upper", "lower", etc. are only used to indicate relative positional relationships, and when the absolute position of the object being described changes, the relative positional relationship may also change accordingly.

[0039] In the following description, when an element or layer is referred to as being "on" another element or layer or "connected to" another element or layer, the element or layer may be directly on the other element or layer, directly connected to the other element or layer, or there may be intermediate elements or intermediate layers. When an element or layer is referred to as being "disposed on one side of" another element or layer, the element or layer may be directly on one side of the other element or layer, directly connected to the other element or layer, or there may be intermediate elements or intermediate layers. However, when an element or layer is referred to as being "directly on" another element or layer or "directly connected to" another element or layer, there are no intermediate elements or intermediate layers. The term "and / or" includes any and all combinations of one or more of the related listed items.

[0040] Figure 1 It is a schematic diagram of an epitaxial structure of a semiconductor device provided for an embodiment of the present disclosure. Figure 2 is Figure 1 A schematic diagram of an epitaxial structure of a buffer layer in the semiconductor device shown. As Figure 1 and Figure 2As shown, a semiconductor device provided by an embodiment of the present disclosure may include:

[0041] A substrate 101, which may be a silicon substrate, a silicon carbide substrate, a sapphire substrate, etc.

[0042] A nucleation layer 102, located on one side of the substrate 101, and the material of the nucleation layer 102 may be GaN or AlN.

[0043] A channel layer 103, located on the side of the nucleation layer 102 away from the substrate 101, and the material of the channel layer 103 may be GaN.

[0044] A barrier layer 104, located on the side of the channel layer 103 away from the nucleation layer 102, and the material of the barrier layer 104 may be Al x Ga 1-x N, where the Al component x is 15% - 35%, such as 20%, 25%, 30%, etc.

[0045] A buffer layer 105, located between the nucleation layer 102 and the channel layer 103. The buffer layer 105 includes a doped superlattice layer 1051, and the doped superlattice layer 1051 includes a carbon-doped aluminum gallium nitride layer BFL1 and a p-type polarization-doped aluminum gallium nitride layer BFL2. Optionally, the carbon-doped aluminum gallium nitride layer BFL1 is located between the p-type polarization-doped aluminum gallium nitride layer BFL2 and the nucleation layer 102, or the carbon-doped aluminum gallium nitride layer BFL1 is located between the p-type polarization-doped aluminum gallium nitride layer BFL2 and the channel layer 103.

[0046] In the above semiconductor device provided by the embodiment of the present disclosure, the carbon doping source of the carbon-doped aluminum gallium nitride layer BFL1 forms deep-level defects in the aluminum gallium nitride thin film to compensate for background electrons, and the Al component of the p-type polarization-doped aluminum gallium nitride layer BFL2 gradually decreases along the growth direction to form p-type polarization doping to compensate for background electrons. Therefore, using the doped superlattice layer 1051 including the carbon-doped aluminum gallium nitride layer BFL1 and the p-type polarization-doped aluminum gallium nitride layer BFL2 as the buffer layer 105 can reduce the average carbon doping concentration of the buffer layer 105 and ensure that the buffer layer 105 has a high resistance value and a low defect density. Moreover, a low average carbon doping concentration can improve the capture of channel electrons by carbon doping defect energy levels in the buffer layer 105 under high voltage, thereby reducing the on-resistance of the device and further improving the high-frequency electrical properties; in addition, the carbon-doped aluminum gallium nitride layer BFL1 and the p-type polarization-doped aluminum gallium nitride layer BFL2 jointly reduce the background electron concentration and thus can reduce the high-voltage leakage risk.

[0047] In some embodiments, in the above semiconductor device provided by the embodiment of the present disclosure, such as Figure 2As shown, the doped superlattice layer 1051 may include at least one doped superlattice unit, and the doped superlattice unit includes a plurality of alternately arranged carbon-doped aluminum gallium nitride layers BFL1 and p-type polarization-doped aluminum gallium nitride layers BFL2. Figure 2 Specifically, it is shown that the doped superlattice layer 1051 includes one doped superlattice unit, and within this doped superlattice unit, there are n alternately arranged carbon-doped aluminum gallium nitride layers BFL1 and p-type polarization-doped aluminum gallium nitride layers BFL2. Figure 3 It is shown Figure 2 the relationship between the Al composition and the thickness in the buffer layer 105, where nh represents the sum of the thicknesses of the nth carbon-doped aluminum gallium nitride layer BFL1 and the nth p-type polarization-doped aluminum gallium nitride layer BFL2, and from Figure 3 It can be seen that the Al composition in each carbon-doped aluminum gallium nitride layer BFL1 is x1, and the Al composition in each p-type polarization-doped aluminum gallium nitride layer BFL2 gradually decreases from greater than x1 to less than x1 along the growth direction, and the average Al composition of each p-type polarization-doped aluminum gallium nitride layer BFL2 is close to x1. Optionally, in the present disclosure, the Al compositions of the carbon-doped aluminum gallium nitride layers BFL1 within the same doped superlattice unit are the same, and the difference between the Al composition of the carbon-doped aluminum gallium nitride layer BFL1 and the average Al composition of the p-type polarization-doped aluminum gallium nitride layer BFL2 within the same doped superlattice unit is within ±1%. The lattice mismatch between AlN and GaN is about 2.5%, and the lattice mismatch of an aluminum gallium nitride layer with a 1% difference in Al composition is 1% multiplied by the lattice mismatch of 2.5% between AlN and GaN, which is equal to 0.025%. Therefore, the lattice mismatch between the carbon-doped aluminum gallium nitride layer BFL1 and the adjacent p-type polarization-doped aluminum gallium nitride layer BFL2 is within 0.03%, and the occurrence of mismatch strain relaxation can be reduced.

[0048] It should be noted that the Al compositions of the carbon-doped aluminum gallium nitride layers BFL1 within the same doped superlattice unit in the present disclosure being the same can be understood as that the designed values of the Al compositions of the carbon-doped aluminum gallium nitride layers BFL1 within the same doped superlattice unit are the same. However, due to process conditions or other factors such as measurement, there may be some deviations between the actual Al compositions of the carbon-doped aluminum gallium nitride layers BFL1 within the same doped superlattice unit and the designed values. Therefore, as long as the relationship that the Al compositions of the carbon-doped aluminum gallium nitride layers BFL1 within the same doped superlattice unit are the same meets the error tolerance, it falls within the protection scope of the present disclosure.

[0049] In some embodiments, in the above semiconductor device provided by the embodiments of the present disclosure, when the doped superlattice layer 1051 includes a plurality of doped superlattice units, in order to adjust the stress and improve the film quality, the Al compositions of the carbon-doped aluminum gallium nitride layers BFL1 in different doped superlattice units can be set differently. For example, Figure 4It is shown that the doped superlattice layer 1051 provided by the embodiments of the present disclosure includes three doped superlattice units with high Al component, medium Al component, and low Al component whose Al components gradually decrease in the direction away from the substrate 101. For example, in the high Al component doped superlattice unit, the Al component of the carbon-doped aluminum gallium nitride layer BFL1 is 80%, and the Al component of the p-type polarization doped aluminum gallium nitride layer BFL2 gradually changes from 81% to 79% along the growth direction; in the medium Al component doped superlattice unit, the Al component of the carbon-doped aluminum gallium nitride layer BFL1 is 50%, and the Al component of the p-type polarization doped aluminum gallium nitride layer BFL2 gradually changes from 51% to 49% along the growth direction; in the low Al component doped superlattice unit, the Al component of the carbon-doped aluminum gallium nitride layer BFL1 is 20%, and the Al component of the p-type polarization doped aluminum gallium nitride layer BFL2 gradually changes from 21% to 19% along the growth direction.

[0050] In some embodiments, the number of carbon-doped aluminum gallium nitride layers BFL1 in the same doped superlattice unit in the present disclosure is 2 to 200, such as 50, 100, 150, etc., and the number of carbon-doped aluminum gallium nitride layers BFL1 in the same doped superlattice unit is negatively correlated with the Al component of the carbon-doped aluminum gallium nitride layer BFL1. For example, 4 carbon-doped aluminum gallium nitride layers BFL1, 12 carbon-doped aluminum gallium nitride layers BFL1, and 15 carbon-doped aluminum gallium nitride layers BFL1 are successively provided in the high Al component doped superlattice unit, the medium Al component doped superlattice unit, and the low Al component doped superlattice unit, and correspondingly, 4 p-type polarization doped aluminum gallium nitride layers BFL2, 12 p-type polarization doped aluminum gallium nitride layers BFL2, and 15 p-type polarization doped aluminum gallium nitride layers BFL2 are alternately arranged with the carbon-doped aluminum gallium nitride layers BFL1.

[0051] In some embodiments, Figure 5 gives Figure 1 another schematic structural diagram of the buffer layer 105 in Figure 5 As shown, the buffer layer 105 of the present disclosure may further include an aluminum nitride layer 1052. Optionally, the thickness of the aluminum nitride layer is 1 nm to 10 nm, such as 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, etc. The aluminum nitride layer 1052 and the doped superlattice layer 1051 may be periodically stacked to form a component superlattice layer as the buffer layer 105. The high bandgap width of the aluminum nitride layer 1052 can be used to further improve the breakdown voltage performance of the semiconductor device. The component superlattice layer may include one or more component superlattice units. In the case where there are multiple component superlattice units, in order to adjust stress and improve the film quality, the Al components of the carbon-doped aluminum gallium nitride layers BFL1 in different component superlattice units may be set differently, and the Al components of the carbon-doped aluminum gallium nitride layers BFL1 in the same component superlattice unit are the same.

[0052] It should be noted that the Al component of the carbon-doped aluminum gallium nitride layer BFL1 in the same-component superlattice unit in the present disclosure is the same. It can be understood that the designed value of the Al component of the carbon-doped aluminum gallium nitride layer BFL1 in the same-component superlattice unit is the same. However, due to process conditions or other factors such as measurement, there may be some deviations between the actual Al component of the carbon-doped aluminum gallium nitride layer BFL1 in the same-component superlattice unit and the designed value. Therefore, as long as the relationship of the same Al component of the carbon-doped aluminum gallium nitride layer BFL1 in the same-component superlattice unit meets the error tolerance, it falls within the protection scope of the present disclosure.

[0053] Figure 5 Figure 105 shows a buffer layer composed of a single-component superlattice unit. Continuing to refer to Figure 5 As can be seen, the single-component superlattice unit may include multiple repeating layers TL. In some embodiments, the number of repeating layers TL of the single-component superlattice unit may be 2 to 100, such as 10, 20, 30, 40, 50, 60, 70, 80, 90, etc. The repeating layer TL includes an aluminum nitride layer 1052 and at least one doped superlattice unit. Optionally, the aluminum nitride layer 1052 may be located on the side of the doped superlattice unit close to the nucleation layer 102 or the channel layer 103. The Al components of the carbon-doped aluminum gallium nitride layers BFL1 contained in the doped superlattice units of each repeating layer TL are the same.

[0054] It should be noted that in a single-component superlattice unit, the Al components of the carbon-doped aluminum gallium nitride layers BFL1 contained in the doped superlattice units of each repeating layer TL are the same. It can be understood that the designed values of the Al components of the carbon-doped aluminum gallium nitride layers BFL1 contained in the doped superlattice units of each repeating layer TL are the same. However, due to process conditions or other factors such as measurement, there may be some deviations between the actual Al components of the carbon-doped aluminum gallium nitride layers BFL1 contained in the doped superlattice units of each repeating layer TL and the designed values. Therefore, as long as the relationship of the same Al components of the carbon-doped aluminum gallium nitride layers BFL1 contained in the doped superlattice units of each repeating layer TL meets the error tolerance, it falls within the protection scope of the present disclosure.

[0055] Figure 5 Specifically, Figure 105 shows that there are m repeating layers TL within a single-component superlattice unit. Figure 6 Figure 105 shows Figure 5 the relationship between the Al component and the thickness of the buffer layer 105, where h3 represents the thickness of the aluminum nitride layer 1052, h1 represents the thickness of the carbon-doped aluminum gallium nitride layer BFL1, and h2 represents the thickness of the p-type polarization-doped aluminum gallium nitride layer BFL2. The thickness of a single repeating layer TL is n1(h1 + h2) + h3, which is equivalent to a single repeating layer TL including an aluminum nitride layer 1052 and n1 alternately arranged carbon-doped aluminum gallium nitride layers BFL1 and p-type polarization-doped aluminum gallium nitride layers BFL2, and by Figure 6It can be seen that the Al component in the carbon-doped aluminum gallium nitride layer BFL1 of each repeating layer TL is x1, and the Al component of the p-type polarization-doped aluminum gallium nitride layer BFL2 gradually decreases from greater than x1 to less than x1 along the growth direction. At the same time, the average Al component of the p-type polarization-doped aluminum gallium nitride layer BFL2 is close to x1. For example, the difference between the Al component of the carbon-doped aluminum gallium nitride layer BFL1 and the average Al component of the p-type polarization-doped aluminum gallium nitride layer BFL2 in each repeating layer TL is within ±1%, which can effectively avoid mismatch defects and relaxation.

[0056] In some embodiments, in the above semiconductor device provided by the embodiments of the present disclosure, in order to reduce the carbon doping concentration on the basis of maintaining the high-resistance characteristics of the buffer layer 105 and further reduce the influence of impurity defects on the high-voltage and high-frequency characteristics of the device. The present disclosure can set the Al component of the carbon-doped aluminum gallium nitride layer BFL1 to be 1% - 95%, such as 10%, 20%, 30%, 40%, 50%, 60%, 70%, 80%, 90%, etc.; the carbon doping concentration of the carbon-doped aluminum gallium nitride layer BFL1 is 10 18 cm -3 ~10 20 cm -3 For example, 10 19 cm -3 etc.; the thickness of the carbon-doped aluminum gallium nitride layer BFL1 is 2 nm - 40 nm, such as 10 nm, 20 nm, 30 nm, etc.; the change range of the Al component in the p-type polarization-doped aluminum gallium nitride layer BFL2 is 1% - 10%, such as 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, etc.; the thickness of the p-type polarization-doped aluminum gallium nitride layer BFL2 is 2 nm - 40 nm, such as 10 nm, 20 nm, 30 nm, etc. And in the present disclosure, when the change of the Al component in the p-type polarization-doped aluminum gallium nitride layer BFL2 is greater than 1%, a sufficient polarization intensity difference can be generated, and when the change of the Al component is less than 10%, the lattice mismatch can be ensured to be small. The thickness range of 2 nm - 40 nm can avoid too frequent growth switching due to too thin thickness and reduce the probability of generation of misfit dislocations due to too thick thickness.

[0057] In some embodiments, Figure 7 and Figure 8 show another structural schematic diagram of the semiconductor device provided by the embodiments of the present disclosure, as Figure 7 and Figure 8As shown, the semiconductor device of the present disclosure may further include a carbon-doped gallium nitride layer 106 located between the channel layer 103 and the buffer layer 105, a high-resistance aluminum gallium nitride layer 107 located between the carbon-doped gallium nitride layer 106 and the buffer layer 105, and an aluminum gallium nitride layer 108 located between the nucleation layer 102 and the buffer layer 105; wherein, the carbon-doped gallium nitride layer 106 can improve the breakdown voltage characteristics of the device and improve the crystal quality; the high-resistance aluminum gallium nitride layer 107 can be used to improve the stress control from the buffer layer 105 to the carbon-doped gallium nitride layer 106, and the high-resistance aluminum gallium nitride layer 107 can achieve a high resistance value through carbon doping, and the carbon doping concentration is 10 18 cm -3 ~10 20 cm -3 , for example, 10 19 cm -3 , the Al component range is 5% - 30%, such as 10%, 20%, etc.; the material of the aluminum gallium nitride layer 108 can be Al with a high Al component 0.8 Ga 0.2 N.

[0058] In some embodiments, the present disclosure may further provide an insertion layer between the barrier layer 104 and the channel layer 103, and a cap layer on the barrier layer 104. Other essential components in the semiconductor device should be understood by those of ordinary skill in the art, and will not be elaborated here, nor should it be regarded as a limitation to the present disclosure.

[0059] The present disclosure also provides Figure 4 , Figure 7 and Figure 8 the manufacturing method of the semiconductor device shown. Among them, Figure 8 the manufacturing process of the semiconductor device shown is as follows:

[0060] 1. Surface treatment of the substrate 101: The substrate 101 (such as a silicon substrate, a silicon carbide substrate, a sapphire substrate, etc.) is placed in a reaction chamber, and the substrate 101 is heated to between 900°C and 1200°C and hydrogen (or ammonia) is introduced to treat the surface of the substrate 101 to obtain a clean surface for subsequent epitaxy.

[0061] 2. Growth of the nucleation layer 102: The temperature of the reaction chamber is between 500°C and 1000°C, the pressure of the reaction chamber is in the range of 50 mbar to 500 mbar, and NH3 and a MO source (such as TMGa or TMAl) are introduced to grow a GaN or AlN nucleation layer with a thickness of 10 nm to 300 nm.

[0062] 3. Grow a buffer layer 105 including a doped superlattice layer 1051 on the nucleation layer 102: The growth temperature ranges from 900 °C to 1100 °C, the reaction chamber pressure ranges from 50 mbar to 200 mbar, and NH3 and MO sources (such as TMAl and TMGa) are introduced to grow an aluminum gallium nitride layer; the growth conditions of the doped superlattice layer 1051 are as follows: 1) Introduce NH3, TMGa, TMAl, and C2H4 to grow a carbon-doped aluminum gallium nitride layer BFL1 with a thickness range of 2 nm to 40 nm, an Al component concentration of 2% to 95%, and a carbon doping concentration range of 10 18 cm -3 ~10 20 cm -3 ; 2) Introduce NH3, TMGa, and TMAl to grow a p-type polarization-doped aluminum gallium nitride layer BFL2 with a thickness range of 2 nm to 40 nm, and the average Al component of the p-type polarization-doped aluminum gallium nitride layer BFL2 gradually decreases with the growth thickness, and the average Al component of the p-type polarization-doped aluminum gallium nitride layer BFL2 differs from the average Al component of the carbon-doped aluminum gallium nitride layer BFL1 in step 1) by within 1%; Repeat the growth of n cycles of 1) and 2) to form a doped superlattice unit, and the range of the number of cycles n is 2 to 200; The buffer layer 105 can be: One, a doped superlattice layer composed of a doped superlattice unit with the same Al component or multiple doped superlattice units with different Al components can be used as the buffer layer 105. Two, grow a component superlattice unit with a period of m composed of a doped superlattice unit and a 1 nm to 10 nm aluminum nitride layer 1052, and the range of the number of cycles m is 2 to 100. A component superlattice layer composed of a component superlattice unit with the same Al component or multiple component superlattice units with different Al components is used as the buffer layer 105.

[0063] 4. Grow a carbon-doped gallium nitride layer 106 on the buffer layer 105: The growth temperature ranges from 950 °C to 1100 °C, the reaction chamber pressure ranges from 50 mbar to 200 mbar, and NH3, TMGa, and C2H4 are introduced to grow a carbon-doped gallium nitride layer 106 with a thickness range of 100 nm to 2000 nm, which is a high-resistance layer.

[0064] 5. Grow a channel layer 103 on the carbon-doped gallium nitride layer 106: The growth temperature ranges from 1000 °C to 1200 °C, the reaction chamber pressure ranges from 100 mbar to 500 mbar, and NH3 and TMGa are introduced to grow a GaN-based channel layer 103 with a thickness range of 50 nm to 500 nm.

[0065] 6. Growing the barrier layer 104 on the channel layer 103: The growth temperature range is 1000°C to 1200°C, the reaction chamber pressure range is 50 mbar to 500 mbar. NH3, TMGa, and TMAl are introduced to grow the barrier layer 104 made of AlGaN material with a thickness range of 10 nm to 50 nm and an Al composition range of 15% to 35%. Optionally, before growing the barrier layer 104, ammonia and TMAl can be introduced first to grow an aluminum nitride layer with a thickness range of 0.5 nm to 2 nm as an insertion layer; after growing the barrier layer 104, ammonia and TMGa can be introduced again to grow a gallium nitride layer with a thickness range of 1 nm to 10 nm as a cap layer.

[0066] Figure 4 The preparation process of the semiconductor device shown is as follows:

[0067] 1. Surface treatment of the substrate 101: The silicon substrate is placed in the reaction chamber, heated to between 1060°C and hydrogen is introduced for high-temperature treatment for 10 minutes. After the oxide on the silicon substrate surface decomposes, a Si atomic step surface for subsequent epitaxy is obtained.

[0068] 2. Growth of the nucleation layer 102: The reaction chamber temperature is reduced to 760°C, 15 sccm of TMAl is introduced for 3 minutes to pre-deposit a layer of Al atoms on the silicon substrate surface, then 1000 sccm of NH3 is introduced to raise the reaction chamber temperature to 900°C, and TMAl is introduced to grow a 20-nm AlN layer, and the temperature is further raised to 1100°C to grow a 200-nm AlN layer; the above 220-nm AlN layer is the nucleation layer 102.

[0069] 3. Growing a doped superlattice layer containing three different Al-composition doped superlattice units on the nucleation layer 102 as the buffer layer 105: The growth temperature is 1010°C, the reaction chamber pressure is 60 mbar. ① Growing the doped superlattice unit with 80% Al composition: The NH3 flow rate is 2000 sccm, the TMAl flow rate is 700 sccm, the TMGa flow rate is 25 sccm, the C2H4 flow rate is 150 sccm, and a 25-nm carbon-doped Al 0.8 Ga 0.2 N layer is grown for 160 s, then the C2H4 source is turned off, and the gradually changing TMAl flow rate is 717.5 sccm to 682.5 sccm, and the gradually changing TMGa flow rate is 22.5 sccm to 27.5 sccm, and a 25-nm p-type polarization-doped aluminum gallium nitride layer (corresponding to the Al composition gradually changing from 81% to 79%) is grown for 160 s. The above carbon-doped Al 0.8 Ga 0.2The n-layer and the p-type polarization-doped aluminum gallium nitride layer form a doped superlattice unit with a high Al composition; ② Grow a doped superlattice unit with a 50% Al composition: the NH3 flow rate is 2000 sccm, the TMAl flow rate is 500 sccm, the TMGa flow rate is 75 sccm, the C2H4 flow rate is 250 sccm, and a 25-nm carbon-doped Al 0.5 Ga 0.5 N layer is grown. Then, the C2H4 source is turned off, and a gradually changing TMAl flow rate from 510 sccm to 490 sccm and a gradually changing TMGa flow rate from 73.5 sccm to 76.5 sccm are introduced. A 30-nm p-type polarization-doped aluminum gallium nitride layer (corresponding to a gradual change in Al composition from 51% to 49%) is grown in 90 s, and the above carbon-doped Al 0.5 Ga 0.5 N layer and the p-type polarization-doped aluminum gallium nitride layer form a doped superlattice unit with a medium Al composition; ③ Grow a doped superlattice unit with a 20% Al composition: the NH3 flow rate is 3000 sccm, the TMAl flow rate is 600 sccm, the TMGa flow rate is 320 sccm, the C2H4 flow rate is 350 sccm, and a 30-nm carbon-doped Al 0.2 Ga 0.8 N layer is grown. Then, the C2H4 source is turned off, and a gradually changing TMAl flow rate from 570 sccm to 630 sccm and a gradually changing TMGa flow rate from 316 sccm to 324 sccm are introduced. A 35-nm p-type polarization-doped aluminum gallium nitride layer (corresponding to a gradual change in Al composition from 21% to 19%) is grown in 63 s, and the above carbon-doped Al 0.2 Ga 0.8 N layer and the p-type polarization-doped aluminum gallium nitride layer form a doped superlattice unit with a low Al composition; The total thickness of the buffer layer 105 including three doped superlattice units is 1985 nm.

[0070] 4. Grow a carbon-doped gallium nitride layer 106 on the buffer layer 105: The growth temperature is 1000 °C, the reaction chamber pressure is 100 mbar, NH3 is introduced at 10000 sccm, the TMGa flow rate is 310 sccm, the C2H4 flow rate is 200 sccm, and a 1500-nm-thick high-resistance carbon-doped gallium nitride layer 106 is grown.

[0071] 5. Grow a channel layer 103 on the carbon-doped gallium nitride layer 106: The growth temperature is 1060 °C, the reaction chamber pressure is 200 mbar, the NH3 flow rate is 30000 sccm, the TMGa flow rate is 200, and a 300-nm-thick gallium nitride-based channel layer 103 is grown.

[0072] 6. Growing the barrier layer 104 on the channel layer 103: The growth temperature is 1060 °C, the pressure in the reaction chamber is 75 mbar, NH3 is introduced at 45000 sccm, the flow rate of TMAl is 200 sccm, and an AlN layer with a growth thickness range of 1 nm is grown as the insertion layer. Then, the flow rate of TMGa is 115 sccm and that of TMAl is 200 sccm to grow a barrier layer 104 made of Al 0.2 Ga 0.8 N material, and finally a 2-nm capping layer made of GaN material is grown.

[0073] Figure 7 The preparation process of the semiconductor device shown is as follows:

[0074] 1. Surface treatment of the substrate 101: The silicon substrate is placed in the reaction chamber, heated to between 1050 °C, and hydrogen is introduced for high-temperature treatment for 15 minutes. After the oxide on the surface of the silicon substrate decomposes, a Si atomic step surface for subsequent epitaxy is obtained.

[0075] 2. Growth of the nucleation layer 102: The temperature of the reaction chamber is reduced to 760 °C, 10 sccm of TMAl is introduced for 5 min to pre-deposit a layer of Al atoms on the surface of the silicon substrate. Then, 1000 sccm of NH3 is introduced to raise the temperature of the reaction chamber to 900 °C, and TMAl is introduced to grow a 25-nm AlN layer. The temperature is further raised to 1100 °C to grow a 220-nm AlN layer; the above 225-nm AlN layer is the nucleation layer 102.

[0076] 3. Growing an aluminum gallium nitride layer 108 on the nucleation layer 102: The growth temperature is 1000 °C, the pressure in the reaction chamber is 50 mbar, the NH3 flow rate is 1500 sccm, the flow rate of TMAl is 650 sccm, the flow rate of TMGa is 25 sccm, and it grows for 640 s to grow a 100-nm high-Al component Al 0.8 Ga 0.2 N layer as the aluminum gallium nitride layer 108.

[0077] 4. Growing a composition superlattice layer containing doped superlattice units on the aluminum gallium nitride layer 108 as the buffer layer 105: The growth temperature is 1000 °C, the pressure in the reaction chamber is 55 mbar. ① Grow a 5-nm aluminum nitride layer 1052. Specifically, the NH3 flow rate is 13000 sccm, the flow rate of TMAl is 340 sccm, and it grows for 60 s to grow a 5-nm aluminum nitride layer 1052. ② Grow a doped superlattice unit with an average Al component of 40%: The NH3 flow rate is 10000 sccm, the flow rate of TMAl is 340 sccm, the flow rate of TMGa is 75 sccm, the C2H4 flow rate is 240 sccm, and it grows for 18 s to grow a 5-nm carbon-doped Al 0.4 Ga 0.6N layers, then turn off the C2H4 source, introduce a gradually changing TMAl flow rate that varies from 340 sccm to 331.7 sccm, and a gradually changing TMGa flow rate that varies from 73.17 sccm to 75 sccm, and grow for 21.8 s to grow a 6 nm p-type polarization-doped aluminum gallium nitride layer (corresponding to the Al composition gradually changing from 40.6% to 39.4%), and repeat the growth of the above carbon-doped Al 0.4 Ga 0.6 N layer and the p-type polarization-doped aluminum gallium nitride layer form a doped superlattice unit; repeat the growth of 29 cycles of the above aluminum nitride layer 1052 and the doped superlattice unit to obtain a composition-doped superlattice layer with a thickness of 1100 nm as the buffer layer 105.

[0078] 5. Grow a high-resistance aluminum gallium nitride layer 107 on the buffer layer 105: The growth temperature is 1000 °C, the reaction chamber pressure is 50 mbar, the NH3 flow rate is 3000 sccm, introduce a TMAl flow rate of 600 sccm, a TMGa flow rate of 320 sccm, and a C2H4 flow rate of 350 sccm, and grow for 1800 s to grow a 1000 nm carbon-doped Al 0.2 Ga 0.8 N as the high-resistance aluminum gallium nitride layer 107.

[0079] 6. Grow a carbon-doped gallium nitride layer 106 on the high-resistance aluminum gallium nitride layer 107: The growth temperature is 1000 °C, the reaction chamber pressure is 100 mbar, introduce NH3 at 10000 sccm, a TMGa flow rate of 310 sccm, and a C2H4 flow rate of 200 sccm, and grow a high-resistance GaN layer with a thickness of 1200 nm as the carbon-doped gallium nitride layer 106.

[0080] 7. Grow a channel layer 103 on the carbon-doped gallium nitride layer 106. The growth temperature is 1050 °C, the reaction chamber pressure is 200 mbar, introduce an NH3 flow rate of 30000 sccm, a TMGa flow rate of 200, and grow a 250 nm thick GaN channel layer 103.

[0081] 8. Grow a barrier layer 104 on the channel layer 103: The growth temperature is 1060 °C, the pressure of the reaction chamber is 75 mbar, introduce NH3 at 45000 sccm, a TMAl flow rate of 260 sccm, and grow a 1 nm thick AlN layer as an insertion layer, then introduce a TMGa flow rate of 105 sccm and TMAl of 20 sccm to grow a 20 nm thick Al 0.25 Ga 0.75 material barrier layer 104, and finally grow a 2 nm thick GaN capping layer.

[0082] Based on the same inventive concept, embodiments of the present disclosure provide an electronic device, including the semiconductor device provided in the embodiments of the present disclosure. Since the principle for the electronic device to solve problems is similar to that of the semiconductor device, the implementation of the electronic device provided in the embodiments of the present disclosure may refer to the implementation of the semiconductor device provided in the embodiments of the present disclosure, and repeated parts will not be described again.

[0083] In some embodiments, the electronic device provided in the embodiments of the present disclosure may include but are not limited to: radio frequency amplifiers, mixers, radars, satellites, power supplies, automotive electronics, energy-saving lamps, home appliances, etc. Of course, in addition to including semiconductor devices, the electronic device provided by the present disclosure may also include other structures. For example, when the electronic device is a radar, it further includes: a transmitter, an antenna, a receiver, etc.; when the electronic device is a mixer, it may further include: an input port and an output port, etc.

[0084] Although the preferred embodiments of the present disclosure have been described, those skilled in the art can make additional changes and modifications once they learn the basic creative concept. Therefore, the appended claims are intended to be construed to include the preferred embodiments as well as all changes and modifications falling within the scope of the present disclosure.

[0085] Obviously, those skilled in the art can make various changes and modifications to the embodiments of the present disclosure without departing from the spirit and scope of the embodiments of the present disclosure. Thus, if these modifications and variations of the embodiments of the present disclosure fall within the scope of the claims of the present disclosure and their equivalent technologies, the present disclosure also intends to include these changes and modifications.

Claims

1. A semiconductor device, characterized in that, Comprising: A substrate; A nucleation layer located on one side of the substrate; A channel layer located on the side of the nucleation layer away from the substrate; A barrier layer located on the side of the channel layer away from the nucleation layer; A buffer layer located between the nucleation layer and the channel layer, the buffer layer comprising a doped superlattice layer, the doped superlattice layer comprising a carbon-doped aluminum gallium nitride layer and a p-type polarization-doped aluminum gallium nitride layer.

2. The semiconductor device according to claim 1, wherein The doped superlattice layer comprises at least one doped superlattice unit, the doped superlattice unit comprising a plurality of alternately arranged carbon-doped aluminum gallium nitride layers and p-type polarization-doped aluminum gallium nitride layers, and the aluminum component of the carbon-doped aluminum gallium nitride layers in the same doped superlattice unit is the same.

3. The semiconductor device according to claim 2, wherein, There are a plurality of the doped superlattice units, and the aluminum components of the carbon-doped aluminum gallium nitride layers in different doped superlattice units are different.

4. The semiconductor device according to claim 3, wherein, In the direction away from the substrate, the aluminum component of the carbon-doped aluminum gallium nitride layers in different doped superlattice units gradually decreases.

5. The semiconductor device according to claim 2, wherein, The number of carbon-doped aluminum gallium nitride layers in the same doped superlattice unit is 2 to 200.

6. The semiconductor device according to claim 1, wherein, The buffer layer further comprises an aluminum nitride layer, and the aluminum nitride layer and the doped superlattice layer are periodically stacked to form a component superlattice layer as the buffer layer.

7. The semiconductor device according to claim 6, wherein, The doped superlattice layer comprises at least one doped superlattice unit, the doped superlattice unit comprising a plurality of alternately arranged carbon-doped aluminum gallium nitride layers and p-type polarization-doped aluminum gallium nitride layers; The component superlattice layer comprises at least one component superlattice unit, the component superlattice unit comprising a plurality of repeating layers, the repeating layer comprising one aluminum nitride layer and at least one doped superlattice unit, and the aluminum component of the carbon-doped aluminum gallium nitride layers in each repeating layer is the same.

8. The semiconductor device according to claim 7, wherein, There are a plurality of the component superlattice units, and the aluminum components of the carbon-doped aluminum gallium nitride layers in different component superlattice units are different.

9. The semiconductor device according to claim 7, wherein, The thickness of the aluminum nitride layer is 1 nm to 10 nm, and the number of repeating layers of one component superlattice layer is 2 to 100.

10. The semiconductor device according to any one of claims 1 to 9, characterized in that, The difference between the aluminum component of the adjacent carbon-doped aluminum gallium nitride layer and the average aluminum component of the p-type polarization-doped aluminum gallium nitride layer is within ±1%.

11. The semiconductor device according to any one of claims 1 to 9, characterized in that, The change range of the aluminum component in the p-type polarization-doped aluminum gallium nitride layer is 1% to 10%.

12. The semiconductor device according to any one of claims 1 to 9, characterized in that, The aluminum component of the carbon-doped aluminum gallium nitride layer is 1% to 95%, and the carbon doping concentration is 10 18 cm -3 ~10 20 cm -3 。 13. The semiconductor device according to any one of claims 1 to 9, characterized in that, The thickness of the carbon-doped aluminum gallium nitride layer is 2 nm to 40 nm, and the thickness of the p-type polarization-doped aluminum gallium nitride layer is 2 nm to 40 nm.

14. An electronic device, characterized in that, Comprising the semiconductor device according to any one of claims 1 to 13.

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