Production line for passivating edges of mass-produced silicon wafers

Through hot wire CVD technology and automated silicon wafer loading system, continuous passivation and multiple film deposition of silicon wafer edges are achieved, solving the problems of complex automation and low production capacity of existing equipment, and improving production efficiency and equipment scalability.

CN120239355AActive Publication Date: 2025-07-01HAC GENERAL SEMITECH CO LTD
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Patent Information

Application Number
CN202510379201.5
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-03-28
Publication Date
2025-07-01
Estimated Expiration
2045-03-28

AI Technical Summary

Technical Problem

The existing silicon wafer passivation equipment has complex automation operations and can only realize the deposition of film layers on the edge of a single-sided silicon wafer, and needs to be processed under vacuum breakage conditions.

Method used

Using hot wire CVD technology, continuous passivation of the edge of the silicon wafer and multiple film deposition is achieved through an automated silicon wafer loading system and vertical carrier layout, including a-Si:H and SiNx:H or SiNxOy:H composite film layers, and are carried out without breaking the vacuum.

Benefits of technology

It realizes efficient passivation of the edge of the silicon wafer and deposition of multiple film layers, doubles the production capacity, strong integrated equipment design and good scalability, which reduces the equipment space and cost and improves production efficiency.

✦ Generated by Eureka AI based on patent content.

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Abstract

The invention relates to a production line for passivating the edge of a mass-produced silicon wafer, and the production line comprises a hot filament CVD process table assembly which is used for depositing a passivation film layer on the edge of the silicon wafer; the silicon wafer loading system and the silicon wafer unloading system are used for loading the silicon wafers onto the vertical support plate and recovering the silicon wafers with passivated edges from the vertical support plate respectively; the first carrier plate rotating assembly is arranged on the inlet side of the process table assembly and is adjacent to the silicon wafer feeding system, the two faces of the first carrier plate rotating assembly receive vertical carrier plates loaded with silicon wafers and convey the vertical carrier plates into the process table assembly, and the second carrier plate rotating assembly is arranged on the outlet side of the process table assembly and is adjacent to the silicon wafer discharging system; receiving the vertical carrier plates from two sides, and transporting the vertical carrier plates to a silicon wafer blanking system; the carrier plate conveying assembly is arranged between the first carrier plate rotation assembly and the second carrier plate rotation assembly and circularly conveys vertical carrier plates between the first carrier plate rotation assembly and the second carrier plate rotation assembly. According to the invention, the edge of the silicon wafer is passivated by using the hot filament CVD technology, automatic collection and placement of the silicon wafer are realized, the productivity is doubled, and deposition of various film layers of the silicon wafer is realized.
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Description

Technical Field

[0001] The present invention belongs to the technical field of silicon wafer coating, and more specifically, relates to a production line for mass-producing edge passivation of silicon wafers. Background Art

[0002] With the continuous development of photovoltaic technology and the continuous enhancement of human environmental protection awareness, enterprises pay more and more attention to energy conservation and environmental protection. In the photovoltaic cell industry, by cutting a silicon wafer in half, the current path of the cell is shortened, and the resistance is reduced to 1 / 4 of that of the full cell, thereby reducing the loss of the cell, enhancing the environmental adaptability of the silicon wafer, and improving the reliability. This has become a key process for improving the performance of photovoltaic modules, especially widely used in high-efficiency cells (such as TOPCon (Tunnel Oxide Passivated Contact) and HJT (Hereto-junction with Intrinsic Thin-layer)). However, during the processes of silicon wafer cutting, grinding, and polishing, microcracks, scratches, and other mechanical damages are likely to occur on the edges. By passivating the edges of the silicon wafers, mechanical damages and stress concentration in subsequent processes can be prevented, and the uniformity and yield of subsequent processes such as lithography and etching can be improved.

[0003] However, for the existing silicon wafer passivation, usually after collecting the silicon wafers and putting them into a passivation tooling box (the silicon wafers are vertically placed in the box), the tooling box is then placed on a carrier plate, and the carrier plate is pushed into the passivation cavity through automation and other means to passivate the silicon wafers. Therefore, this equipment needs to achieve: (1) taking out the silicon wafers from the silicon wafer box; (2) putting the silicon wafers into the passivation tooling box; (3) rotating the silicon wafers by 90° so that the edges of the silicon wafers face upward; (4) placing the passivation tooling box on the carrier plate and automatically pushing the carrier plate into the cavity for passivation. However, the automation actions of this kind of equipment are complex, and it can only achieve the deposition of film layers on the edges of one side of the silicon wafers.

[0004] Therefore, there is an urgent need to design a production line for edge passivation of silicon wafers that can solve the above defects. Summary of the Invention

[0005] Aiming at the deficiencies of the prior art, the purpose of the present invention is to provide a production line for mass-producing edge passivation of silicon wafers. This production line can achieve passivation and continuous deposition of the edges of silicon wafers at low temperature (the temperature of the silicon wafers cannot exceed 250°C) and without breaking the vacuum on one piece of equipment: intrinsic a-Si:H + SiN x :H (or SiN x O y :H) composite film layer.

[0006] To solve the above technical problems or achieve the above purpose, the present invention adopts the following technical solutions:

[0007] According to one aspect of the present invention, there is provided a production line for edge passivation of mass-produced silicon wafers, including:

[0008] A process table assembly for hot wire CVD, which is configured to deposit a passivation film layer on the edge of the silicon wafer;

[0009] A silicon wafer loading system and a silicon wafer unloading system, where the silicon wafer loading system is configured to load the silicon wafer onto a vertical carrier plate, and the silicon wafer unloading system is configured to recover the silicon wafer with edge passivation from the vertical carrier plate;

[0010] A first carrier plate rotating assembly and a second carrier plate rotating assembly. The first carrier plate rotating assembly is arranged on the inlet side of the process table assembly and adjacent to the silicon wafer loading system. The two sides of the first carrier plate rotating assembly receive the vertical carrier plate loaded with the silicon wafer and transport the vertical carrier plate into the process table assembly. The second carrier plate rotating assembly is arranged on the outlet side of the process table assembly and adjacent to the silicon wafer unloading system. The two sides of the second carrier plate rotating assembly receive the vertical carrier plate coming out of the process table assembly and transport the vertical carrier plate to the silicon wafer unloading system;

[0011] A carrier plate conveying assembly, which is arranged between the first carrier plate rotating assembly and the second carrier plate rotating assembly and is configured to circularly transport the vertical carrier plate between the two.

[0012] In an embodiment of the present invention, the process table assembly includes a feed chamber, a plurality of process chambers and a discharge chamber. Among them, the plurality of process chambers include a first process chamber and a second process chamber. And the edge of the silicon wafer on the carrier plate deposits an a-Si:H film layer in the first process chamber under vacuum conditions, and deposits a SiN x :H film layer or SiN x O y :H film layer on the a-Si:H film layer in the second process chamber under vacuum conditions.

[0013] In an embodiment of the present invention, the silicon wafer loading system and the silicon wafer unloading system are independently arranged.

[0014] In an embodiment of the present invention, the silicon wafer loading system includes a silicon wafer loading encapsulation assembly and a silicon wafer loading assembly. Among them, the silicon wafer loading encapsulation assembly places the silicon wafer in a passivation tooling box, and the silicon wafer loading assembly loads the passivation tooling box full of silicon wafers onto the carrier plate of the first carrier plate rotating assembly and places the empty passivation tooling box on the carrier plate of the first carrier plate rotating assembly on the silicon wafer loading encapsulation assembly.

[0015] In an embodiment of the present invention, the silicon wafer unloading system includes a silicon wafer unloading component and a silicon wafer unloading and recycling component. The silicon wafer unloading component places the passivation tooling box on the carrier of the second carrier rotation component onto the silicon wafer unloading and recycling component and places the empty passivation tooling box on the silicon wafer unloading and recycling component onto the carrier of the second carrier rotation component. The silicon wafer unloading and recycling component takes out the silicon wafers in the passivation tooling box and packages them. The carrier of the empty passivation tooling box on the second carrier rotation component is transported to the first carrier rotation component through the carrier transportation component.

[0016] In an embodiment of the present invention, the first carrier rotation component rotates 180° so that each of its two sides receives a vertical carrier. The first carrier rotation component rotates 90° so that the side of the vertical carrier on which the silicon wafers are placed faces the silicon wafer loading component and the loading of the passivation tooling box filled with silicon wafers is completed. The first carrier rotation component rotates 180° again so that the side of the other vertical carrier on which the silicon wafers are placed faces the silicon wafer loading component and the loading of the passivation tooling box filled with silicon wafers is completed. After the loading of the two vertical carriers is completed, the first carrier rotation component rotates 90° again and transports the two vertical carriers into the process station component.

[0017] The second carrier rotation component rotates 180° so that each of its two sides receives a vertical carrier coming out of the process station component. The second carrier rotation component rotates 90° so that the side of the vertical carrier coming out on which the silicon wafers are placed faces the silicon wafer unloading component and the recycling of the passivation tooling box is completed. The second carrier rotation component rotates 180° again so that the side of the other vertical carrier on which the silicon wafers are placed faces the silicon wafer unloading component and the recycling of the passivation tooling box is completed. After the recycling of the two vertical carriers is completed, the second carrier rotation component rotates 90° again and transports the two vertical carriers onto the carrier transportation component.

[0018] In an embodiment of the present invention, the silicon wafer loading system and the silicon wafer unloading system are integrally arranged by sharing the silicon wafer loading and unloading component.

[0019] In an embodiment of the present invention, the silicon wafer loading system further includes a silicon wafer loading and encapsulation component. The silicon wafer loading and encapsulation component places the silicon wafers in the passivation tooling box. The silicon wafer loading and unloading component loads the passivation tooling box filled with silicon wafers onto the carrier of the carrier transportation component. The carrier transportation component transports the carrier of the passivation tooling box filled with silicon wafers to the first carrier rotation component.

[0020] In an embodiment of the present invention, the wafer blanking system further includes a wafer blanking and recycling component. The second carrier plate rotation component transports the passivated carrier plate to the carrier plate conveying component. The wafer loading and unloading component places the passivation tooling box on the passivated carrier plate on the carrier plate conveying component on the wafer blanking and recycling component and places the empty passivation tooling box on the wafer blanking and recycling component on the wafer loading and packaging component. The wafer blanking and recycling component takes out the wafers in the passivation tooling box and packages them.

[0021] In an embodiment of the present invention, the first carrier plate rotation component rotates 180° so that each side receives a vertical carrier plate, and transports the two vertical carrier plates into the process table component; the second carrier plate rotation component rotates 180° so that each side receives a vertical carrier plate coming out of the process table component.

[0022] The technical solution provided by the present invention has the following advantages compared with the prior art:

[0023] (1) The present invention uses the hot wire CVD technology to passivate the edges of the wafers, realizes the automatic collection and placement of the wafers through an automated wafer loading system (especially the automated wafer loading and packaging component), doubles the production capacity through the vertical carrier plate fixation and double carrier plate layout, and realizes the deposition of multiple passivation film layers on the wafers without breaking the vacuum through the configuration of the process table component (especially multiple process chambers).

[0024] (2) The production line of the present invention has a strong integrated design. The carrier plate conveying component realizes an integrated design scheme for carrier plate feeding, carrier plate discharging, and carrier plate recycling. The separate wafer loading component and wafer blanking component and the integrated wafer loading and unloading component realize an integrated design scheme for passivation tooling box loading, passivation tooling box unloading, and passivation tooling box recycling.

[0025] (3) The production line of the present invention has a high production capacity and strong scalability. Only a small number of process chamber devices need to be added to upgrade the production line. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] The accompanying drawings here are incorporated into the specification and form a part of this specification, showing embodiments consistent with the present invention and used together with the specification to explain the principles of the present invention.

[0027] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the accompanying drawings required for the description of the embodiments or the prior art. Obviously, for those of ordinary skill in the art, other drawings can also be obtained based on these drawings without creative efforts.

[0028] Figure 1 FIG. shows a schematic structural diagram of a production line for mass-producing wafer edge passivation provided in an embodiment of the present invention;

[0029] Figure 2 shows a Figure 1 top view schematic diagram of the detailed structure of the production line of

[0030] Figure 3 shows a schematic diagram of the brief structure of a production line for mass-producing edge passivation of silicon wafers provided in another embodiment of the present invention;

[0031] Figure 4 shows a Figure 3 top view schematic diagram of the detailed structure of the production line of

[0032] Among them, 1. process table assembly; 2. silicon wafer loading system; 3. silicon wafer unloading system; 4. silicon wafer loading and encapsulation assembly; 5. silicon wafer loading assembly; 6. silicon wafer unloading assembly; 7. silicon wafer unloading and recycling assembly; 8. first carrier plate rotation assembly; 9. second carrier plate rotation assembly; 10. silicon wafer loading and unloading assembly; 11. carrier plate conveying assembly; 12. feed chamber; 13. first process chamber; 14. second process chamber; 15. discharge chamber. Detailed implementation manners

[0033] In order to be able to more clearly understand the above-mentioned objects, features and advantages of the present invention, the embodiments of the present invention will be further described below. It should be noted that, without conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other.

[0034] Many specific details are set forth in the following description in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described herein; obviously, the embodiments in the specification are only a part of the embodiments of the present invention, rather than all of the embodiments.

[0035] As Figures 1-4 shown, the embodiments of the present invention provide a production line for mass-producing edge passivation of silicon wafers, including:

[0036] The process table assembly 1 of hot wire CVD, and the process table assembly 1 is configured to deposit a passivation film layer on the edge of the silicon wafer;

[0037] The silicon wafer loading system 2 and the silicon wafer unloading system 3, the silicon wafer loading system 2 is configured to load the silicon wafers onto a vertical carrier plate, and the silicon wafer unloading system 3 is configured to recover the silicon wafers with edge passivation from the vertical carrier plate;

[0038] The first carrier plate rotation assembly 8 and the second carrier plate rotation assembly 9. The first carrier plate rotation assembly 8 is arranged on the inlet side of the process table assembly 1 and adjacent to the wafer loading system 2. Both sides of the first carrier plate rotation assembly 8 receive the vertical carrier plates loaded with wafers and transport the vertical carrier plates into the process table assembly 1. The second carrier plate rotation assembly 9 is arranged on the outlet side of the process table assembly 1 and adjacent to the wafer unloading system 3. Both sides of the second carrier plate rotation assembly 9 receive the vertical carrier plates coming out of the process table assembly 1 and transport the vertical carrier plates to the wafer unloading system 3;

[0039] The carrier plate conveying assembly 11 is arranged between the first carrier plate rotation assembly 8 and the second carrier plate rotation assembly 9 and is configured to circulate and transport the vertical carrier plates between the two.

[0040] Through the above technical solutions of the present invention, the present invention uses the hot wire CVD technology to passivate the edges of wafers, realizes the automatic collection and placement of wafers through an automated wafer loading system, doubles the production capacity through vertical carrier plate fixation and a double-carrier plate layout, and realizes the deposition of various passivation film layers on wafers under the condition of non-breaking vacuum through the configuration of the process table assembly.

[0041] In the production line shown in the above embodiment of the present invention, as Figures 1-4 shown, the process table assembly 1 includes a feed chamber 12, a plurality of process chambers and a discharge chamber 15. The plurality of process chambers include a first process chamber 13 and a second process chamber 14. And the edges of the wafers on the vertical carrier plates are deposited with an a-Si:H (amorphous silicon) film layer in the first process chamber 13 under vacuum conditions, and a SiN x :H (silicon nitride) film layer or SiN x O y :H (silicon oxynitride) film layer is deposited on the a-Si:H film layer in the second process chamber 14 under vacuum conditions. Of course, in other alternative embodiments, the number of process chambers can be increased as needed for further coating. Through the configuration of a plurality of process chambers, the deposition of various passivation film layers on wafers is realized under the condition of non-breaking vacuum in the process chambers.

[0042] In the production line shown in the above embodiment of the present invention, as Figures 1-2 shown, the wafer loading system 2 and the wafer unloading system 3 are each independently arranged.

[0043] In the production line shown in the above embodiment of the present invention, as Figures 1-2As shown, the silicon wafer loading system 2 includes a silicon wafer loading and encapsulation component 4 and a silicon wafer loading component 5. The silicon wafer loading and encapsulation component 4 places silicon wafers in a passivation tooling box. The silicon wafer loading component 5 loads the passivation tooling box filled with silicon wafers onto the vertical carrier plate of the first carrier plate rotating component 8 and places the empty passivation tooling box on the vertical carrier plate of the first carrier plate rotating component 8 onto the silicon wafer loading and encapsulation component 4. The silicon wafer unloading system 3 includes a silicon wafer unloading component 6 and a silicon wafer unloading and recycling component 7. The silicon wafer unloading component 6 places the passivation tooling box on the vertical carrier plate of the second carrier plate rotating component 9 onto the silicon wafer unloading and recycling component 7 and places the empty passivation tooling box on the silicon wafer unloading and recycling component 7 onto the vertical carrier plate of the second carrier plate rotating component 9. The silicon wafer unloading and recycling component 7 takes out the silicon wafers in the passivation tooling box and packages them. The passivation tooling box is a container for placing silicon wafers, and the vertical carrier plate is a transportation carrier for carrying the passivation tooling box. The production line of the present invention realizes an integrated design scheme for loading, unloading, and recycling the passivation tooling box through the independently provided silicon wafer loading component 5 and silicon wafer unloading component 6.

[0044] In the production line shown in the above embodiment of the present invention, as Figures 1-2 shown, the vertical carrier plate of the empty passivation tooling box on the second carrier plate rotating component 9 is transported to the first carrier plate rotating component 8 through the carrier plate conveying component 11. The carrier plate conveying component 11 in the production line of the present invention realizes an integrated design scheme for vertical carrier plate feeding, vertical carrier plate discharging, and vertical carrier plate recycling.

[0045] In the production line shown in the above embodiment of the present invention, as Figures 1-2 shown, the first carrier plate rotating component 8 rotates 180° so that each side receives a vertical carrier plate. The first carrier plate rotating component 8 rotates 90° so that the side of the vertical carrier plate for placing silicon wafers faces the silicon wafer loading component 5 and completes the loading of the passivation tooling box filled with silicon wafers. The first carrier plate rotating component 8 rotates 180° again to make the side of the other vertical carrier plate for placing silicon wafers face the silicon wafer loading component 5 and complete the loading of the passivation tooling box filled with silicon wafers. After the loading of the two vertical carrier plates is completed, the first carrier plate rotating component 8 rotates 90° again and transports the two vertical carrier plates into the process platform component 1. The second carrier plate rotating component 9 rotates 180° so that each side receives a vertical carrier plate coming out of the process platform component 1. The second carrier plate rotating component 9 rotates 90° so that the side of the vertical carrier plate coming out for placing silicon wafers faces the silicon wafer unloading component 6 and completes the recycling of the passivation tooling box. The second carrier plate rotating component 9 rotates 180° again to make the side of the other vertical carrier plate for placing silicon wafers face the silicon wafer unloading component 6 and complete the recycling of the passivation tooling box. After the recycling of the two vertical carrier plates is completed, the second carrier plate rotating component 9 rotates 90° again and transports the two vertical carrier plates onto the carrier plate conveying component 11.

[0046] In this solution, the carrier board is vertical on the carrier board conveying assembly 11 and parallel to the cavity structure of the process table assembly 1. A vertical carrier board is transported from the carrier board conveying assembly 11 to the first carrier board rotating assembly 8. The first carrier board rotating assembly 8 rotates 180°. After waiting to receive another vertical carrier board, and after receiving a vertical carrier board on each side of the first carrier board rotating assembly 8, at this time, the side edge of the vertical carrier board faces the wafer loading assembly 5, rather than the surface of the vertical carrier board where the wafers are placed facing the wafer loading assembly 5. As a result, the wafers cannot be placed on the vertical carrier board through the wafer loading assembly 5. Therefore, the first carrier board rotating assembly 8 rotates 90° to make the surface of the vertical carrier board where the wafers are placed face the wafer loading assembly 5, so that the wafer loading assembly 5 can pick up the wafers and place them on the vertical carrier board. After the wafer loading assembly 5 completes the loading of the wafers on this vertical carrier board, the first carrier board rotating assembly 8 rotates 180° again to make the surface of the other vertical carrier board where the wafers are placed face the wafer loading assembly 5, so that the wafer loading assembly 5 can pick up the wafers and place them on this vertical carrier board. After the wafer loading assembly 5 loads the passivation tooling boxes filled with wafers onto the respective vertical carrier boards facing it, at this time, the double carrier boards are vertical, but perpendicular to the cavity structure direction of the process table assembly 1 and cannot enter. Therefore, the first carrier board rotating assembly 8 rotates 90° again, and the double carrier boards are parallel to the cavity structure direction of the process table assembly 1, so that they can enter the process table assembly 1.

[0047] After the two vertical carrier boards complete the coating deposition in the process table assembly 1, one vertical carrier board comes out of the process table assembly 1 and is transported to the second carrier board rotating assembly 9. The second carrier board rotating assembly 9 rotates 180°. After waiting to receive the other vertical carrier board that comes out, and after receiving a vertical carrier board on each side of the second carrier board rotating assembly 9, at this time, the side edge of the vertical carrier board faces the wafer unloading assembly 6, rather than the surface of the vertical carrier board where the wafers are placed facing the wafer unloading assembly 6. As a result, the wafers cannot be unloaded and recycled through the wafer unloading assembly 6. Therefore, the second carrier board rotating assembly 9 rotates 90° to make the surface of the vertical carrier board where the wafers are placed face the wafer unloading assembly 6. The wafer unloading assembly 6 picks up the passivation tooling box of the wafers and places it on the wafer unloading and recycling assembly 7 to complete the recycling of the passivation tooling box. The second carrier board rotating assembly 9 rotates 180° again to make the surface of the other vertical carrier board where the wafers are placed face the wafer unloading assembly 6. The wafer unloading assembly 6 picks up the passivation tooling box of the wafers and places it on the wafer unloading and recycling assembly 7 to complete the recycling of the passivation tooling box. After the two vertical carrier boards are recycled, the second carrier board rotating assembly 9 rotates 90° again, and the two vertical carrier boards are transported to the carrier board conveying assembly 11.

[0048] In the production line shown in the above embodiments of the present invention, optionally, as Figures 3-4 shown, the wafer loading system 2 and the wafer unloading system 3 share the wafer loading and unloading assembly 10 and are integrally arranged.

[0049] In the production line shown in the above embodiments of the present invention, as Figures 3-4 shown, the wafer loading system 2 further includes a wafer loading and encapsulation component 4. The wafer loading and encapsulation component 4 places the wafers in the passivation tooling box. At this time, the wafer loading and unloading component 10 loads the passivation tooling box filled with wafers onto the vertical carrier plate of the carrier plate conveying component 11. The carrier plate conveying component 11 transports the vertical carrier plate of the passivation tooling box filled with wafers to the first carrier plate rotation component 8. The wafer unloading system 3 further includes a wafer unloading and recycling component 7. The second carrier plate rotation component 9 transports the vertical carrier plate that has completed passivation to the carrier plate conveying component 11. At this time, the wafer loading and unloading component 10 places the passivation tooling box on the vertical carrier plate on the carrier plate conveying component 11 that has completed passivation on the wafer unloading and recycling component 7 and places the empty passivation tooling box on the wafer loading and encapsulation component 4. The wafer unloading and recycling component 7 takes out the wafers in the passivation tooling box and packages them. The production line of the present invention has a strong integrated design. The carrier plate conveying component 11 realizes an integrated design scheme for vertical carrier plate feeding, vertical carrier plate discharging, and vertical carrier plate recycling. The wafer loading and unloading component 10 realizes an integrated design scheme for passivation tooling box loading, passivation tooling box unloading, and passivation tooling box recycling.

[0050] In the production line shown in the above embodiments of the present invention, as Figures 3-4 shown, the first carrier plate rotation component 8 rotates 180° so that each side receives a vertical carrier plate, and the two vertical carrier plates enter the process station component 1; the second carrier plate rotation component 9 rotates 180° to make each side receive a vertical carrier plate coming out of the process station component 1.

[0051] In this solution, as Figures 3-4 shown, the carrier plate is vertical on the carrier plate conveying component 11. The surface of the vertical carrier plate on which the wafers are placed faces the wafer loading and unloading component 10. The wafer loading and unloading component 10 can grasp the wafers and place them on the vertical carrier plate. A vertical carrier plate is transported from the carrier plate conveying component 11 to the first carrier plate rotation component 8. The first carrier plate rotation component 8 rotates 180° and waits for another vertical carrier plate. After the two sides of the first carrier plate rotation component 8 receive the vertical carrier plates loaded with wafers, the two vertical carrier plates move forward together, parallel to the cavity structure of the process station component, and directly enter the process station component 1.

[0052] After the two vertical carrier plates complete film deposition in the process station component 1, one vertical carrier plate comes out of the process station component 1 and is transported to the second carrier plate rotation component 9. The second carrier plate rotation component 9 rotates 180° and waits to receive the other vertical carrier plate coming out. After each side of the second carrier plate rotation component 9 receives a vertical carrier plate, the double carrier plates are transported to the carrier plate conveying component 11.

[0053] The above technical solutions of the present invention will be described in detail below through specific embodiments.

[0054] Embodiment 1

[0055] As Figures 1-2 shown, a schematic diagram of the brief structure and a top view of the detailed structure of a production line for edge passivation of mass-produced silicon wafers provided in an embodiment of the present invention are respectively shown. In this embodiment, the production line includes: a process table assembly 1 for hot wire CVD, a silicon wafer loading system 2 and a silicon wafer unloading system 3 independently provided on the left and right sides of the process table assembly 1 respectively, a first carrier plate rotating assembly 8 and a second carrier plate rotating assembly 9 on the left and right sides of the process table assembly 1, and a carrier plate conveying assembly 11 between the first carrier plate rotating assembly 8 and the second carrier plate rotating assembly 9.

[0056] The process table assembly 1 for hot wire CVD is used to deposit a passivation film layer on the edge of the silicon wafer. The process table assembly 1 for hot wire CVD includes a feed chamber 12, a first process chamber 13, a second process chamber 14, and a discharge chamber 15. The vertical carrier plates (double carrier plates) received on both sides of the first carrier plate rotating assembly 8 enter the feed chamber 12 in the process table assembly 1. The vertical carrier plates are transitioned in the feed chamber 12. When the feed chamber 12 reaches a predetermined vacuum condition, the vertical carrier plates are pushed into the first process chamber 13. The vertical carrier plates enter the first process chamber 13 to deposit the first layer of film, the a-Si:H film layer. After completion, the vertical carrier plates are pushed into the second process chamber 14. The vertical carrier plates enter the second process chamber 14 to deposit the second layer of film, SiN x :H film layer or SiN x O y :H film layer, thereby forming a composite passivation film layer. After the coating is completed, the vertical carrier plates are pushed into the discharge chamber 15. After the discharge chamber 15 breaks the vacuum, the vertical carrier plates are pushed onto the second carrier plate rotating assembly 9.

[0057] The silicon wafer loading system 2 is used to load silicon wafers onto the vertical carrier plates. The silicon wafer loading system 2 includes a silicon wafer loading and encapsulation assembly 4 and a silicon wafer loading assembly 5. The silicon wafer loading and encapsulation assembly 4 receives finished silicon wafers, takes out the finished silicon wafers, and places the taken-out silicon wafers into a set passivation tooling box. The silicon wafer loading assembly 5 grabs the passivation tooling box filled with silicon wafers, places the passivation tooling box filled with silicon wafers on the vertical carrier plates of the first carrier plate rotating assembly 8, and grabs the empty passivation tooling box on the vertical carrier plates of the first carrier plate rotating assembly 8 and places it into the loading and encapsulation assembly 4.

[0058] The silicon wafer blanking system 3 is used to recover the silicon wafers after edge passivation from the vertical carrier plate. The silicon wafer blanking system 3 includes a silicon wafer blanking component 6 and a silicon wafer blanking and recovery component 7. The silicon wafer blanking component 6 places the passivation tooling box with the silicon wafers edge-passivated on the vertical carrier plate of the second carrier plate rotation component 9 into the silicon wafer blanking and recovery component 7, and places the empty passivation tooling box in the silicon wafer blanking and recovery component 7 onto the vertical carrier plate of the second carrier plate rotation component 9. The silicon wafer blanking and recovery component 7 is used to receive the passivation tooling box after the passivation coating process transmitted from the silicon wafer blanking component 6, take out the silicon wafers in the passivation tooling box after the passivation coating process, and package the silicon wafers.

[0059] The first carrier plate rotation component 8 is arranged on the inlet side of the process table component 1 and adjacent to the silicon wafer loading system 2. The two sides of the first carrier plate rotation component 8 receive the vertical carrier plates, and then transport the vertical carrier plates into the process table component 1. The first carrier plate rotation component 8 rotates 180° so that each of the two sides receives a vertical carrier plate. The first carrier plate rotation component 8 rotates 90° so that the side of a vertical carrier plate on which the silicon wafers are placed faces the silicon wafer loading component 5 and completes the loading of the passivation tooling box filled with silicon wafers. The first carrier plate rotation component 8 rotates 180° again to make the side of the other vertical carrier plate on which the silicon wafers are placed face the silicon wafer loading component 5 and complete the loading of the passivation tooling box filled with silicon wafers. Then, after the two vertical carrier plates are loaded, the first carrier plate rotation component 8 rotates 90° again and transports the two vertical carrier plates into the process table component 1.

[0060] The second carrier plate rotation component 9 is arranged on the outlet side of the process table component 1 and adjacent to the silicon wafer blanking system 3. The two sides of the second carrier plate rotation component 9 receive the vertical carrier plates coming out of the process table component 1 and transport the vertical carrier plates to the silicon wafer blanking system 3. The two sides of the second carrier plate rotation component 9 receive the vertical carrier plates after passivation. The second carrier plate rotation component 9 rotates 180° so that each of the two sides receives a vertical carrier plate coming out of the process table component 1. The second carrier plate rotation component 9 rotates 90° so that the side of a vertical carrier plate coming out on which the silicon wafers are placed faces the silicon wafer blanking component 6 and completes the recovery of the passivation tooling box. The second carrier plate rotation component 9 rotates 180° again to make the side of the other vertical carrier plate on which the silicon wafers are placed face the silicon wafer blanking component 6 and complete the recovery of the passivation tooling box. Then, after the two vertical carrier plates are recovered, the second carrier plate rotation component 9 rotates 90° again and transports the two vertical carrier plates onto the carrier plate conveying component 11.

[0061] The carrier plate conveying component 11 is arranged between the first carrier plate rotation component 8 and the second carrier plate rotation component 9 and is configured to circulate and transport the vertical carrier plates between the two. The carrier plate conveying component 11 receives the vertical carrier plates from the second carrier plate rotation component 9 and transports the vertical carrier plates onto the first carrier plate rotation component 8.

[0062] Refer to again Figures 1-2, when the above production line is in use, the specific operation process is as follows:

[0063] A box of finished silicon wafers is transported to the wafer loading and encapsulation component 4 of the wafer loading system 2 through a conveyor belt. The wafer loading and encapsulation component 4 takes out the finished silicon wafers and places them in a set passivation tooling box, and the silicon wafers are placed horizontally.

[0064] One side of the first carrier plate rotation component 8 receives a vertical carrier plate from the carrier plate conveying component 11. After completion, the first carrier plate rotation component 8 flips 180°. After that, the other side of the first carrier plate rotation component 8 receives another vertical carrier plate from the carrier plate conveying component 11. After completion, the first carrier plate rotation component 8 rotates 90° so that the surface of one of the vertical carrier plates on which the silicon wafers are placed faces the wafer loading component 5 of the wafer loading system 2. At this time, the wafer loading component 5 (for example, it can be a six-axis robot or other similar mechanism) grabs and places the passivation tooling box filled with silicon wafers on this vertical carrier plate. After completion, the first carrier plate rotation component 8 rotates 180° again so that the surface of the other vertical carrier plate on which the silicon wafers are placed faces the wafer loading component 5 of the wafer loading system 2. At this time, the wafer loading component 5 grabs and places the passivation tooling box filled with silicon wafers on this vertical carrier plate. After the two vertical carrier plates are loaded, the first carrier plate rotation component 8 rotates 90° again and transports the two vertical carrier plates into the process table component 1, thereby realizing double carrier plate transportation. The vertical double carrier plates are transported to the side of the feed cavity 12 of the process table component 1. Then, after the vacuum is broken in the feed cavity 12, the first carrier plate rotation component 8 pushes the double carrier plates into the feed cavity 12.

[0065] The silicon wafers on the double carrier plates are in transition in the feed cavity 12. When the feed cavity 12 reaches the predetermined vacuum condition, the double carrier plates are pushed into the first process cavity 13 to deposit the first layer of film, the a-Si:H film layer. After completion, the double carrier plates are pushed into the second process cavity 14 to deposit the second layer of film, SiN x :H film layer or SiN x O y :H film layer, thereby forming a composite passivation film layer. After the coating is completed, the double carrier plates are continuously pushed into the discharge cavity 15.

[0066] After the discharge chamber 15 breaks the vacuum, the vertically double carrier plates after film coating are pushed into the second carrier plate rotating assembly 9. One side of the second carrier plate rotating assembly 9 receives one vertically carrier plate after film coating. The second carrier plate rotating assembly 9 flips 180°. The other side receives the other vertically carrier plate after film coating. Then the second carrier plate rotating assembly 9 flips 90° so that the side of the vertically carrier plate where the silicon wafer is placed faces the silicon wafer blanking assembly 6 to complete the recycling of the passivation tooling box. The second carrier plate rotating assembly 9 rotates 180° again to make the side of the other vertically carrier plate where the silicon wafer is placed face the silicon wafer blanking assembly 6 to complete the recycling of the passivation tooling box. Then after the recycling of the two vertically carrier plates is completed, the second carrier plate rotating assembly 9 rotates 90° again and transports the two vertically carrier plates to the carrier plate conveying assembly 11.

[0067] The silicon wafer blanking assembly 6 of the silicon wafer blanking system 3 (for example, it can be a six-axis robot or other similar mechanisms) puts the passivation tooling box that has completed the passivation process on the second carrier plate rotating assembly 9 into the silicon wafer blanking and recycling assembly 7. The silicon wafer blanking and recycling assembly 7 takes out the silicon wafers in the passivation tooling box after the process and packages the silicon wafers. The silicon wafer blanking assembly 6 places the empty passivation tooling box after taking out the silicon wafers on the vertically carrier plate of the second carrier plate rotating assembly 9.

[0068] The vertically carrier plate of the empty passivation tooling box on the second carrier plate rotating assembly 9 is conveyed to the first carrier plate loading assembly 8 through the carrier plate conveying assembly 11.

[0069] Repeat the above process, perform automated operations cyclically, and realize mass production of silicon wafer edge passivation.

[0070] Embodiment 2

[0071] As Figures 3-4 shown, a schematic diagram of the brief structure and a top view of the detailed structure of a production line for mass-producing silicon wafer edge passivation provided in another embodiment of the present invention are respectively shown. In this embodiment, the production line includes: a process table assembly 1 for hot wire CVD, a silicon wafer loading system 2 and a silicon wafer blanking system 3 that are integrally arranged by sharing the silicon wafer loading and unloading assembly 10, a first carrier plate rotating assembly 8 and a second carrier plate rotating assembly 9 on both sides of the process table assembly 1, and a carrier plate conveying assembly 11 between the first carrier plate rotating assembly 8 and the second carrier plate rotating assembly 9.

[0072] The process table assembly 1 of hot wire CVD is used to deposit a passivation film layer on the edge of a silicon wafer. The process table assembly 1 of hot wire CVD includes a feeding chamber 12, a first process chamber 13, a second process chamber 14, and a discharging chamber 15. The vertical carriers (double carriers) received on both sides of the first carrier rotation assembly 8 enter the feeding chamber 12 in the process table assembly 1. The vertical carriers are transitioned in the feeding chamber 12. When the feeding chamber 12 reaches the predetermined vacuum condition, the vertical carriers are pushed into the first process chamber 13. The vertical carriers enter the first process chamber 13 to deposit the first layer of thin film, the a-Si:H film layer. After completion, the vertical carriers are pushed into the second process chamber 14. The vertical carriers enter the second process chamber 14 to deposit the second layer of thin film, SiN x :H film layer or SiN x O y :H film layer, thereby forming a composite passivation film layer. After the coating is completed, the vertical carriers are pushed into the discharging chamber 15. After the discharging chamber 15 breaks the vacuum, the vertical carriers are pushed onto the second carrier rotation assembly 9.

[0073] The silicon wafer loading system 2 is used to load silicon wafers onto the carriers. The silicon wafer loading system 2 includes a silicon wafer loading and encapsulation assembly 4 and a silicon wafer loading and unloading assembly 10 shared with the silicon wafer unloading system 3. The silicon wafer loading and encapsulation assembly 4 receives finished silicon wafers, takes out the finished silicon wafers, and places the taken-out silicon wafers into a set passivation tooling box. Here, the silicon wafer loading and unloading assembly 10 grabs the passivation tooling box filled with silicon wafers and places the passivation tooling box filled with silicon wafers onto the vertical carrier of the carrier conveying assembly 11.

[0074] The silicon wafer unloading system 3 is used to recover the silicon wafers with edge passivation from the carriers. The silicon wafer unloading system 3 includes a silicon wafer loading and unloading assembly 10 shared with the silicon wafer loading system 2 and a silicon wafer unloading and recovery assembly 7. Here, the silicon wafer loading and unloading assembly 10 places the passivation tooling box after the process into the silicon wafer unloading and recovery assembly 7, and grabs the empty passivation tooling box in the silicon wafer unloading and recovery assembly 7 and places it into the silicon wafer loading and encapsulation assembly 4. The silicon wafer unloading and recovery assembly 7 is used to receive the passivation tooling box after the process transmitted from the silicon wafer loading and unloading assembly 10, take out the silicon wafers in the passivation tooling box after the process, and package the silicon wafers.

[0075] The first carrier plate rotation assembly 8 is arranged on the inlet side of the process table assembly 1 and adjacent to the wafer loading system 2. Both sides of the first carrier plate rotation assembly 8 receive vertical carrier plates, and then transport the vertical carrier plates into the process table assembly 1. The carrier plates are vertical on the carrier plate conveying assembly 11, and the surface of the vertical carrier plate on which the wafers are placed faces the wafer loading and unloading assembly 10. The wafer loading and unloading assembly 10 can grasp the wafers and place them on the vertical carrier plates. A vertical carrier plate is transported from the carrier plate conveying assembly 11 to the first carrier plate rotation assembly 8. The first carrier plate rotation assembly 8 rotates 180°, waits for another vertical carrier plate. After both sides of the first carrier plate rotation assembly 8 receive the vertical carrier plates, the two vertical carrier plates move forward together, parallel to the cavity structure of the process table assembly 1, and directly enter the process table assembly 1.

[0076] After the two vertical carrier plates complete the coating deposition in the process table assembly 1, one vertical carrier plate comes out of the process table assembly 1 and is transported to the second carrier plate rotation assembly 9. The second carrier plate rotation assembly 9 rotates 180° and waits to receive the other vertical carrier plate that comes out. After each side of the second carrier plate rotation assembly 9 receives a vertical carrier plate, the double carrier plates are transported to the carrier plate conveying assembly 11.

[0077] The carrier plate conveying assembly 11 is arranged between the first carrier plate rotation assembly 8 and the second carrier plate rotation assembly 9 and is configured to circulate and transport the vertical carrier plates between the two. The carrier plate conveying assembly 11 automatically conveys the vertical carrier plates filled with wafers in the passivation tooling boxes to the first carrier plate rotation assembly 8 and receives the vertical carrier plates from the second carrier plate rotation assembly 9.

[0078] Refer again to Figures 3-4 As shown, when the above production line is in use, the specific process is as follows (as shown by the direction indicated by the thick black arrow in Figure 3 ):

[0079] A box of finished wafers is transported to the wafer loading and encapsulation assembly 4 of the wafer loading system 2 through a conveyor belt. The wafer loading and encapsulation assembly 4 takes out the finished wafers and places them in the set passivation tooling boxes, and the wafers are placed horizontally.

[0080] The wafer loading and unloading assembly 10 (for example, it can be a six-axis robot or other similar mechanisms) grasps and places the passivation tooling boxes filled with wafers on the vertical carrier plates of the carrier plate conveying assembly 11. The carrier plate conveying assembly 11 conveys the vertical carrier plates to the first carrier plate rotation assembly 8. One side of the first carrier plate rotation assembly 8 receives a vertical carrier plate. The first carrier plate rotation assembly 8 flips 180°. The carrier plate conveying assembly 11 continues to convey the vertical carrier plates to the first carrier plate rotation assembly 8. The other side of the first carrier plate rotation assembly 8 receives another vertical carrier plate to achieve double carrier plate transportation.

[0081] The first carrier plate rotating assembly 8 transports the vertical double carrier plate to the side of the feeding cavity 12 of the process table assembly 1. Then, after the feeding cavity achieves vacuum breaking, the first carrier plate rotating assembly 8 pushes the double carrier plate into the feeding cavity 12.

[0082] The silicon wafers on the double carrier plate are in transition in the feeding cavity 12. When the feeding cavity 12 reaches the predetermined vacuum condition, the double carrier plate is pushed into the first process cavity 13. The carrier plate enters the first process cavity 13 to deposit the first layer of thin film, the a-Si:H film layer. After completion, the carrier plate is pushed into the second process cavity 14 to deposit the second layer of thin film, SiN x :H or SiN x O y :H film layer. After the coating is completed, the double carrier plate is pushed into the discharging cavity 15.

[0083] When the discharging cavity 15 breaks vacuum, the vertically double carrier plate with the coating completed is pushed into the second carrier plate rotating assembly 9. One side of the second carrier plate rotating assembly receives one vertically carrier plate with the coating completed. Then, the second carrier plate rotating assembly 9 flips 180°, and the other side receives the other vertically carrier plate with the coating completed.

[0084] The second carrier plate rotating assembly 9 transports the vertically carrier plate to the side of the carrier plate transporting assembly 11 and pushes the vertically carrier plate on one side into the carrier plate transporting assembly 11. After the second carrier plate rotating assembly flips 180°, it pushes the vertically carrier plate on the other side into the carrier plate transporting assembly 11. The silicon wafer loading and unloading assembly 10 places the passivation tooling box with the coating completed on the carrier plate transporting assembly 11 into the silicon wafer unloading and recycling assembly 7. The silicon wafer unloading and recycling assembly 7 takes out the silicon wafers in the passivation tooling box after the process and packages the silicon wafers.

[0085] The silicon wafer loading and unloading assembly 10 transports the empty passivation tooling box after taking out the silicon wafers to the silicon wafer loading and encapsulation assembly 4.

[0086] Repeat the above process to perform automated operations cyclically to achieve mass production of silicon wafer edge passivation.

[0087] It can be seen that from the above-mentioned Embodiments 1-2, a production line for mass-producing silicon wafer edge passivation provided by the present invention can achieve passivation and continuous deposition of the silicon wafer edge without breaking vacuum on one device at a low temperature (the temperature of the silicon wafer cannot exceed 250°C): Intrinsic a-Si:H + SiN x :H (or SiN x O y: H) Composite film layer. The present invention uses hot wire CVD technology to passivate the edges of silicon wafers. Through an automated silicon wafer loading and encapsulation component, silicon wafers can be automatically collected and placed. Through vertical carrier plate fixation and a dual-carrier plate layout, the production capacity can be doubled. Through the configuration of multiple process chambers, various film layer depositions on silicon wafers can be achieved under the condition that the process chambers do not break vacuum. Moreover, the production line of the present invention has a strong integrated design. The carrier plate conveying component realizes an integrated design solution for carrier plate feeding, carrier plate discharging, and carrier plate recycling. The separately provided silicon wafer loading component and silicon wafer unloading component, as well as the integrated silicon wafer loading and unloading component, realize an integrated design solution for loading, unloading, and recycling the passivation tooling box. Furthermore, the production line of the present invention has a high production capacity and strong scalability. To upgrade the production line, only a small number of process chamber equipment needs to be added.

[0088] In addition, the above production line layout method of the present invention effectively reduces the occupied space of automated equipment, effectively reduces the range of battery chips exposed to the air, reduces the space that needs to be made into a clean area, and reduces the usage cost. Moreover, the above production line layout method of the present invention utilizes the effective space and can increase the number of process equipment arrangements within a limited width, further improving the production capacity of the entire production line.

[0089] In summary, the production line of the present invention has simple and smooth automated operations and a strong integrated design. It can deposit various film layers on the edges of silicon wafers on both sides of the carrier plate and can double the production capacity.

[0090] It should be noted that in this article, relational terms such as "first" and "second" are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the term "comprises", "comprising" or any other variation thereof is intended to cover a non-exclusive inclusion, such that a process, method, article or device comprising a series of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article or device. Without further limitation, an element defined by the statement "comprising a..." does not exclude the presence of additional identical elements in the process, method, article or device comprising the element.

[0091] The above are only embodiments of the present invention, which enable those skilled in the art to understand and implement the present invention. Various modifications to the embodiments will be obvious to those skilled in the art. The general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments described herein, but rather will conform to the broadest scope consistent with the principles and features disclosed herein.

Claims

1. A production line for mass production of silicon wafer edge passivation, characterized in that: include: A hot wire CVD process stage assembly, wherein the process stage assembly is configured to deposit a passivation film layer on the edge of a silicon wafer; A silicon wafer loading system and a silicon wafer unloading system, wherein the silicon wafer loading system is configured to load the silicon wafers onto the vertical carrier, and the silicon wafer unloading system is configured to recover the silicon wafers after edge passivation from the vertical carrier; A first carrier rotating assembly and a second carrier rotating assembly, wherein the first carrier rotating assembly is arranged at the entrance side of the process table assembly and adjacent to the silicon wafer loading system, the first carrier rotating assembly receives vertical carriers loaded with silicon wafers on both sides and transports the vertical carriers into the process table assembly, and the second carrier rotating assembly is arranged at the exit side of the process table assembly and adjacent to the silicon wafer unloading system, the second carrier rotating assembly receives vertical carriers coming out of the process table assembly on both sides and transports the vertical carriers to the silicon wafer unloading system; A carrier conveying assembly is disposed between the first carrier rotating assembly and the second carrier rotating assembly and is configured to cyclically transport vertical carriers therebetween.

2. The production line for mass production of silicon wafer edge passivation according to claim 1, characterized in that: The process table assembly includes a feed chamber, a plurality of process chambers and a discharge chamber, wherein the plurality of process chambers include a first process chamber and a second process chamber, and an edge of a silicon wafer on a vertical carrier is deposited in the first process chamber under vacuum conditions to obtain an a-Si:H film layer, and a SiN film is deposited on the a-Si:H film layer in the second process chamber under vacuum conditions. x :H film or SiN x O y :H film layer.

3. The production line for mass production of silicon wafer edge passivation according to claim 1, characterized in that: The silicon wafer loading system and the silicon wafer unloading system are independently arranged.

4. The production line for mass production of silicon wafer edge passivation according to claim 3, characterized in that: The silicon wafer loading system includes a silicon wafer loading packaging component and a silicon wafer loading component, wherein the silicon wafer loading packaging component places the silicon wafers in a passivation chemical box, and the silicon wafer loading component loads the passivation chemical box filled with silicon wafers onto the vertical carrier of the first carrier rotating component and places the empty passivation chemical box on the vertical carrier of the first carrier rotating component onto the silicon wafer loading packaging component.

5. The production line for mass production of silicon wafer edge passivation according to claim 4, characterized in that: The silicon wafer unloading system includes a silicon wafer unloading component and a silicon wafer unloading recovery component, wherein the silicon wafer unloading component places the blunt chemical box on the vertical carrier of the second carrier rotating component onto the silicon wafer unloading recovery component and places the empty blunt chemical box on the silicon wafer unloading recovery component on the vertical carrier of the second carrier rotating component, the silicon wafer unloading recovery component takes out the silicon wafers in the blunt chemical box and packages them, and the vertical carrier of the empty blunt chemical box on the second carrier rotating component is transported to the first carrier rotating component via the carrier conveying component.

6. The production line for mass production of silicon wafer edge passivation according to claim 5, characterized in that: The first carrier rotating assembly rotates 180° so that each of the two sides receives a vertical carrier, the first carrier rotating assembly rotates 90° so that the side of a vertical carrier on which the silicon wafers are placed faces the silicon wafer loading assembly and completes the loading of the passivation chemical box filled with silicon wafers, the first carrier rotating assembly rotates 180° again so that the side of another vertical carrier on which the silicon wafers are placed faces the silicon wafer loading assembly and completes the loading of the passivation chemical box filled with silicon wafers, and the first carrier rotating assembly rotates 90° again after the two vertical carriers are loaded and transports the two vertical carriers to the process table assembly; The second carrier rotating assembly rotates 180° so that both sides receive a vertical carrier coming out of the process table assembly respectively, the second carrier rotating assembly rotates 90° so that the surface of a vertical carrier on which the silicon wafers are placed faces the silicon wafer unloading assembly and completes the recovery of the passivation chemical box, the second carrier rotating assembly rotates 180° again so that the surface of another vertical carrier on which the silicon wafers are placed faces the silicon wafer unloading assembly and completes the recovery of the passivation chemical box, the second carrier rotating assembly rotates 90° again after the two vertical carriers are recovered and transports the two vertical carriers to the carrier conveying assembly.

7. The production line for mass production of silicon wafer edge passivation according to claim 1, characterized in that: The silicon wafer loading system and the silicon wafer unloading system share the silicon wafer loading and unloading components and are arranged as a whole.

8. The production line for mass production of silicon wafer edge passivation according to claim 7, characterized in that: The silicon wafer loading system also includes a silicon wafer loading and packaging assembly, wherein the silicon wafer loading and packaging assembly places the silicon wafers in a passivation chemical box, the silicon wafer loading and unloading assembly loads the passivation chemical box filled with silicon wafers onto the vertical carrier of the carrier conveying assembly, and the carrier conveying assembly transports the vertical carrier of the passivation chemical box filled with silicon wafers to the first carrier rotating assembly.

9. The production line for mass production of silicon wafer edge passivation according to claim 8, characterized in that: The silicon wafer unloading system also includes a silicon wafer unloading and recycling component, wherein the second carrier rotating component transports the vertical carrier that has completed passivation to the carrier conveying component, the silicon wafer loading and unloading component places the passivation chemical box on the vertical carrier that has completed passivation on the carrier conveying component on the silicon wafer unloading and recycling component and places the empty passivation chemical box on the silicon wafer unloading and recycling component on the silicon wafer loading and packaging component, and the silicon wafer unloading and recycling component takes out the silicon wafers in the passivation chemical box and packages them.

10. The production line for mass production of silicon wafer edge passivation according to claim 9, characterized in that: The first carrier rotating assembly rotates 180° so that each of the two sides receives a vertical carrier and transports the two vertical carriers into the process table assembly; the second carrier rotating assembly rotates 180° so that each of the two sides receives a vertical carrier from the process table assembly.

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