Mask plate, display panel and preparation method thereof

Abstract

The invention discloses a mask plate, a display panel and a preparation method of the mask plate. Materials of the mask plate comprise a thermal decomposition material. According to the mask plate, the yield and the preparation efficiency of the display panel can be effectively improved.

Description

Technical Field

[0001] The present application relates to the field of display technologies, and in particular, to a mask plate, a display panel, and a method for manufacturing the same. Background Art

[0002] With the continuous development of display technologies, people's requirements for display devices have also been continuously increasing. Organic light-emitting diode (OLED) display panels and quantum dot display panels (QLED) have attracted much attention due to their high color purity, color saturation, and other characteristics.

[0003] In the preparation of the functional layers of a display panel, since the functional solution is likely to disperse out after being disposed on one pixel region of a substrate by the solution method and fall into other pixel regions of the substrate, it causes problems such as different volumes of the functional solution within the pixel regions or color mixing, reducing the yield rate of the product. Summary of the Invention

[0004] Based on this, the present application provides a mask plate, a display panel, and a method for manufacturing the same.

[0005] In order to solve the above technical problems, the present application provides a mask plate, adopting the following technical solutions:

[0006] A mask plate, wherein the material of the mask plate includes a thermal decomposition material.

[0007] Further, at least one hollow opening is formed in the mask plate;

[0008] and / or, the thermal decomposition temperature of the thermal decomposition material is less than or equal to 250 °C;

[0009] Further, the thermal decomposition material is a polymer material;

[0010] Optionally, the polymer material includes polyolefin, polyvinyl alcohol, polyurethane, polyamide, polyester, polyimide;

[0011] Optionally, the polymer material is selected from at least one of polylactic acid, polyvinyl alcohol, polyisobutene, polyoxymethylene, polyvinyl chloride, and polythiirubber.

[0012] Further, the thickness of the mask plate is 0.1 - 10 μm;

[0013] Preferably, the thickness of the mask plate is 1 - 10 μm;

[0014] More preferably, the thickness of the mask plate is 5 - 10 μm.

[0015] In order to solve the above technical problems, the present application provides a method for manufacturing a display panel, adopting the following technical solutions:

[0016] A method for preparing a display panel, comprising the following steps:

[0017] Provide a first electrode and a first mask plate;

[0018] Set the first mask plate on the first electrode, and then set a first material solution through the hollow opening of the mask plate on the first electrode, and perform annealing treatment to make the first material solution form a first functional layer;

[0019] Form a second electrode on the first functional layer to obtain a display panel;

[0020] Wherein, the first mask plate is selected from the mask plates as described above.

[0021] Further, the step of forming the second electrode on the functional layer further includes:

[0022] Set a second mask plate on the first functional layer;

[0023] Set a second material solution through the hollow opening of the second mask plate on the first functional layer, and perform annealing treatment to make the second material solution form a second functional layer;

[0024] Form a second electrode on the second functional layer;

[0025] Wherein, the second mask plate is selected from the mask plates as described above;

[0026] The material of the first mask plate is the same as or different from the material of the second mask plate;

[0027] The second material solution and the first material solution are made of different materials.

[0028] Further, the first material in the first material solution is a first light-emitting material, and the first functional layer is a first light-emitting layer;

[0029] And before the step of forming the second electrode on the functional layer, the following steps are further included:

[0030] Set a third mask plate on the first electrode; the position of the hollow opening of the third mask plate is different from the position of the hollow opening of the first mask plate relative to the position of the first electrode;

[0031] Set a second light-emitting material solution through the hollow opening of the third mask plate on the first electrode, and perform annealing treatment to make the second light-emitting material solution form a second light-emitting layer;

[0032] Then form a second electrode on the first light-emitting layer and the second light-emitting layer;

[0033] Among them, the third mask plate is selected from the mask plates described above;

[0034] The material of the first mask plate is the same as or different from that of the third mask plate;

[0035] The second luminescent material in the second luminescent material solution has a different luminescent color from that of the first luminescent material.

[0036] Further, the annealing time of the annealing treatment is 3 to 120 minutes, and the annealing temperature is 100 to 250 °C; and / or,

[0037] The display panel further includes other functional layers, and the other functional layers include an electron functional layer and a hole functional layer;

[0038] Optionally, the electron functional layer includes an electron transport layer and an electron injection layer; the hole functional layer includes a hole transport layer and a hole injection layer.

[0039] Further, the materials of the first electrode and the second electrode independently include one or more of metals, carbon materials, and metal oxides. The metals include one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg; the carbon materials include one or more of graphite, carbon nanotubes, graphene, and carbon fibers; the metal oxides include doped or undoped metal oxides, including one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, and AMO, or a composite electrode including a metal sandwiched between doped or undoped transparent metal oxides. The composite electrodes include one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2; and / or,

[0040] The hole injection layer comprises a hole injection material, and the hole injection material comprises at least one of poly(3,4-ethylenedioxythiophene), poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinodimethane, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, polycarbonate copper phthalocyanine, MoO3, WO3, transition metal oxides, and transition metal chalcogenides; the transition metal oxides are selected from at least one of NiOx, MoOx9, WOx, CrOx, or CuOx, and the transition metal chalcogenides are selected from at least one of MoSx, MoSex, WSx, WSex, or CuSx; and / or,

[0041] The hole transport layer comprises a hole transport material, and the hole transport material comprises at least one of an organic hole transport material and an inorganic hole transport material. The organic hole transport material comprises at least one of poly(9,9-dioctylfluorene-co-N-(4-butylphenyl)diphenylamine), polyvinylcarbazole, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine), poly(9,9-dioctylfluorene-co-bis-N,N-phenyl-1,4-phenylenediamine), 4,4',4''-tris(carbazol-9-yl)triphenylamine, 4,4'-bis(9-carbazolyl)biphenyl, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, doped graphene, undoped graphene, and C 60 at least one of them, and the inorganic hole transport material comprises at least one of doped or undoped NiO, WO3, MoO3, and CuO; and / or,

[0042] The luminescent material includes at least one of single-structure quantum dots and core-shell structure quantum dots. The materials of the single-structure quantum dots, the core materials of the core-shell structure quantum dots, and the shell materials of the core-shell structure quantum dots are each independently selected from at least one of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. Among them, the II-VI group compounds are selected from at least one of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; the IV-VI group compounds are selected from at least one of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe; the III-V group compounds are selected from at least one of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, or InAlPSb; the I-III-VI group compounds are selected from at least one of CuInS2, CuInSe2, and AgInS2; and / or,

[0043] The electron transport layer includes an electron transport material, which includes an inorganic material and / or an organic material; the inorganic material is selected from one or more of doped or undoped zinc oxide, barium oxide, aluminum oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, lithium titanium oxide, aluminum zinc oxide, manganese zinc oxide, tin zinc oxide, lithium zinc oxide, indium tin oxide, cadmium sulfide, zinc sulfide, molybdenum sulfide, tungsten sulfide, copper sulfide, zinc stannide, indium phosphide, gallium phosphide, copper indium sulfide, copper gallium sulfide, barium titanate, and the doping elements include at least one of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, gadolinium; the organic material is selected from at least one of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, hydroxyquinoline compounds, polythiophene compounds, perylene diimide compounds, fullerene compounds.

[0044] In order to solve the above technical problems, the present application also provides a display panel, which adopts the following technical solutions:

[0045] A display panel is made by using the preparation method of the display panel as described above.

[0046] Compared with the prior art, the present application mainly has the following beneficial effects: In the preparation of the functional layer, the mask plate of the present application effectively improves the yield and preparation efficiency of the obtained functional layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] In order to more clearly illustrate the solutions in the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the drawings in the following description are some embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0048] Figure 1 is a schematic structural diagram of the mask plate of the embodiment of the present application;

[0049] Figure 2 is a flowchart of the preparation method of the display panel of the embodiment of the present application;

[0050] Figure 3 is a schematic structural diagram of the substrate in the preparation method of the display panel of the embodiment of the present application;

[0051] Figure 4 is a schematic structural diagram of the optoelectronic device in the display panel of the embodiment of the present application.

[0052] Reference numerals:

[0053] 100, Mask; 110, Hollow opening; 200, Substrate; 210, Pixel opening; 300, First electrode; 400, Hole injection layer; 500, Hole transport layer; 600, Light emitting layer; 700, Electron transport layer; 800, Second electrode. Detailed implementation mode

[0054] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those of ordinary skill in the technical field to which this application belongs; the terms used in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" and any variations thereof in the specification and claims of this application and the above drawings are intended to cover non-exclusive inclusion. The terms "first", "second", etc. in the specification and claims of this application or the above drawings are used to distinguish different objects and not to describe a specific order.

[0055] Reference to "embodiment" herein means that a specific feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of this application. The phrase appears at various positions in the specification and does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment mutually exclusive with other embodiments. Those skilled in the art will explicitly and implicitly understand that the embodiments described herein can be combined with other embodiments.

[0056] Refer to Figure 1 , an embodiment of this application provides a mask, and the material of the mask 100 includes a thermally decomposable material.

[0057] In this embodiment, since the material of the mask 100 includes a thermally decomposable material, it can be decomposed during the annealing process of the functional layer. Thus, in the preparation of the functional layer, there is no need to perform the step of removing the mask 100, improving the preparation efficiency of the functional layer.

[0058] Secondly, when preparing the functional layer, the masking effect of the mask 100 is used to block the functional solution for preparing the functional layer from dispersing to other pixel openings, thereby improving the consistency of the volume of the functional solution in different pixel openings, improving the color accuracy of the prepared display panel, and further improving the yield of the display panel. Moreover, the requirements for the equipment for solution preparation are reduced, and the manufacturing method is very simple.

[0059] In some embodiments, the mask 100 is provided with at least one hollow opening 110. In the preparation of the functional layer, the hollow opening 110 is the non-masking part on the mask 100 and is used for the setting of the functional material.

[0060] Furthermore, the number of the hollow openings 110 corresponds to the number of the pixel openings on the substrate.

[0061] Further, the hollow openings 110 on the mask plate 100 are formed by laser drilling.

[0062] In some embodiments, the thermal decomposition temperature of the thermal decomposition material is less than or equal to the annealing temperature of the functional layer. Understandably, based on the selected functional layer for preparation, a mask plate 100 with a thermal temperature less than the annealing temperature of the functional layer can be selected, so that the mask plate 100 can be completely decomposed during the annealing process of the functional layer.

[0063] Further, the thermal decomposition temperature of the thermal decomposition material is less than or equal to 250 °C.

[0064] Optionally, the thermal decomposition temperature of the thermal decomposition material is less than or equal to any one or any range formed by any two of 250 °C, 200 °C, 150 °C, 100 °C, 50 °C, 1 °C.

[0065] Exemplarily, (1) when the functional layer is a hole injection layer, the annealing temperature of the functional layer is 150 to 250 °C. At this time, the thermal decomposition temperature range of the thermal decomposition material is less than or equal to 250 °C;

[0066] (2) when the functional layer is a hole transport layer, the annealing temperature of the functional layer is 120 to 240 °C. Correspondingly, the thermal decomposition temperature range of the thermal decomposition material is less than or equal to 240 °C;

[0067] (3) when the functional layer is a light-emitting layer, the annealing temperature of the functional layer is 100 to 180 °C. Correspondingly, the thermal decomposition temperature range of the thermal decomposition material is less than or equal to 180 °C;

[0068] (4) when the functional layer is an electron transport layer, the annealing temperature of the functional layer is 60 to 200 °C. Correspondingly, the thermal decomposition temperature range of the thermal decomposition material is less than or equal to 200 °C.

[0069] In some embodiments, the thermal decomposition material is a polymer material, and the polymer material includes polyolefin, polyvinyl alcohol, polyurethane, polyamide, polyester, polyimide.

[0070] Optionally, the polymer material is selected from at least one of polylactic acid, polyvinyl alcohol, polyisobutylene, polyoxymethylene, polyvinyl chloride, and polythiirubber.

[0071] Exemplarily, (1) when the functional layer is a hole injection layer and the annealing treatment temperature corresponding to the hole injection layer is 150 °C, the thermal decomposition material can be selected from polylactic acid.

[0072] (2) when the functional layer is a hole transport layer and the annealing treatment temperature corresponding to the hole injection layer is 180 °C, the thermal decomposition material can be selected from at least one of polylactic acid and polyvinyl chloride.

[0073] In some embodiments, the thickness of the mask plate 100 is from 0.1 μm to 10 μm. Within this range, the effect that the hollow openings 110 on the mask plate 100 can block the dispersion of the functional solution to other pixel regions can be further improved, and the mask plate 100 is more easily decomposed during the annealing process of the functional layer.

[0074] Optionally, the thickness of the mask plate 100 is selected from any one or the range formed by any two of 0.1 μm, 0.5 μm, 1 μm, 2 μm, 3 μm, 4 μm, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, and 10 μm.

[0075] Referring to Figure 2 , the embodiment of the present application further provides a method for manufacturing a display panel, including the following steps:

[0076] Step S1, providing a first electrode and a first mask plate; wherein, the first mask plate is the mask plate as described above.

[0077] In some embodiments, the material of the first electrode includes one or more of a metal, a carbon material, and a metal oxide. The metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg; the carbon material includes one or more of graphite, carbon nanotubes, graphene, and carbon fibers; the metal oxide includes a doped or undoped metal oxide, including one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, and AMO, or a composite electrode including a metal sandwiched between a doped or undoped transparent metal oxide. The composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2.

[0078] Step S2, disposing the first mask plate on the first electrode, and then disposing a first material solution through the hollow opening of the first mask plate on the first electrode, and performing annealing treatment to form a first functional layer from the first material solution.

[0079] In this embodiment, since the material of the mask plate includes a thermally decomposable material, it can be decomposed during the annealing process of the first functional layer. Thus, in the preparation of the first functional layer, there is no need to perform the step of removing the mask plate, improving the preparation efficiency of the functional layer.

[0080] Secondly, when preparing the first functional layer, the hollow openings in the mask plate are used to block the dispersion of the first material solution into other pixel regions, thereby improving the deposition quality of the first material solution in different pixel regions to be more consistent, enhancing the color accuracy of the prepared display panel, and further improving the yield rate of the display panel. Moreover, the equipment requirements for solution preparation are reduced, and the manufacturing method is very simple.

[0081] In some embodiments, the first material solution is disposed on the first electrode through the hollow openings of the first mask plate by evaporation or solution method.

[0082] Preferably, the first material solution is disposed on the first electrode through the hollow openings of the first mask plate by solution method. Specifically, during the preparation process, the first material solution is first dissolved in a solvent to prepare a functional solution, and then the first material solution is disposed on the first electrode through the hollow openings of the first mask plate by solution method.

[0083] Furthermore, the solution method includes at least one of sol-gel method, printing, inkjet printing, spin coating, and coating.

[0084] In some embodiments, a substrate is used to prepare the display panel, wherein a plurality of pixel openings are formed on the substrate, and each pixel opening is provided with a first electrode. The first electrodes are integrally formed or separately arranged; correspondingly, the number of hollow openings on the mask plate is the same as the number of pixel openings on the substrate. In practical applications, the mask plate is disposed on the substrate, and the positions of the hollow openings on the mask plate correspond to the positions of the pixel openings on the substrate one by one, so that the functional material can be disposed on the first electrode in the pixel opening in the subsequent process, and then the first mask plate and the substrate are closely attached by an isostatic pressing device.

[0085] In some embodiments, the annealing treatment duration is 3 to 120 minutes. Within this range, the first material solution can be sufficiently heated and dried to improve the film formation quality, and the mask plate can also be completely thermally decomposed to avoid the influence of the residual first mask plate on the performance of the formed first functional layer.

[0086] Optionally, the annealing treatment duration is selected from any one or any range formed by any two of 3 minutes, 10 minutes, 20 minutes, 30 minutes, 40 minutes, 50 minutes, 60 minutes, 70 minutes, 80 minutes, 90 minutes, 100 minutes, 110 minutes, and 120 minutes.

[0087] In some embodiments, the annealing temperature is 100 to 250 °C.

[0088] Optionally, the annealing temperature is selected from any one or any range formed by any two of 100°C, 120°C, 140°C, 160°C, 180°C, 200°C, 220°C, 240°C, and 250°C.

[0089] In some embodiments, the display panel further includes other functional layers, and the other functional layers include an electron functional layer, a hole functional layer, and a light-emitting layer.

[0090] In some embodiments, the electron functional layer includes an electron transport layer and an electron injection layer; the hole functional layer includes a hole transport layer and a hole injection layer; the light-emitting layer includes the first light-emitting layer and / or the second light-emitting layer as described above.

[0091] Optionally, the hole injection layer includes a hole injection material, and the hole injection material includes at least one of poly(3,4-ethylenedioxythiophene), poly(3,4-ethylenedioxythiophene)-polystyrenesulfonic acid, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinodimethane, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, polycarbonate copper, MoO3, WO3, transition metal oxides, and transition metal chalcogenides; the transition metal oxides are selected from at least one of NiOx, MoOx, WOx, CrOx, or CuOx, and the transition metal chalcogenides are selected from at least one of MoSx, MoSex, WSx, WSex, or CuSx.

[0092] Optionally, the hole transport layer includes a hole transport material, and the hole transport material includes at least one of an organic hole transport material and an inorganic hole transport material. The organic hole transport material includes at least one of poly(9,9-dioctylfluorene-CO-N-(4-butylphenyl)diphenylamine), polyvinylcarbazole, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine), poly(9,9-dioctylfluorene-co-bis-N,N-phenyl-1,4-phenylenediamine), 4,4',4''-tris(carbazol-9-yl)triphenylamine, 4,4'-bis(9-carbazole)biphenyl, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, doped graphene, undoped graphene, and C 60 and at least one of doped or undoped NiO, WO3, MoO3, and CuO.

[0093] Optionally, the first luminescent material and / or the second luminescent layer each independently includes at least one of a single-structure quantum dot and a core-shell structure quantum dot. The material of the single-structure quantum dot, the core material of the core-shell structure quantum dot, and the shell material of the core-shell structure quantum dot are each independently selected from at least one of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. Among them, the II-VI group compounds are selected from at least one of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; the IV-VI group compounds are selected from at least one of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe; the III-V group compounds are selected from at least one of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, or InAlPSb; and the I-III-VI group compounds are selected from at least one of CuInS2, CuInSe2, and AgInS2.

[0094] Optionally, the electron transport layer includes an electron transport material, which is an electron transport material including an inorganic material and / or an organic material; the inorganic material is selected from one or more of doped or undoped zinc oxide, barium oxide, aluminum oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, lithium titanium oxide, aluminum zinc oxide, manganese zinc oxide, tin zinc oxide, lithium zinc oxide, indium tin oxide, cadmium sulfide, zinc sulfide, molybdenum sulfide, tungsten sulfide, copper sulfide, zinc stannide, indium phosphide, gallium phosphide, copper indium sulfide, copper gallium sulfide, barium titanate, and the doping elements include at least one of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, gadolinium.

[0095] Step S3, form a second electrode on the first functional layer to obtain a display panel.

[0096] In some embodiments, the second electrode is prepared on the first functional layer by evaporation coating.

[0097] In some embodiments, in the above step S3, the step of forming the second electrode on the first functional layer includes:

[0098] Set a second mask plate on the first functional layer;

[0099] Set the second material solution through the hollow opening of the second mask plate on the first functional layer, and perform annealing treatment to make the second material solution form a second functional layer;

[0100] Form a second electrode on the second functional layer;

[0101] Wherein, the second mask plate is selected from the mask plates as described above;

[0102] The material of the first mask plate is the same as or different from the material of the second mask plate;

[0103] The second material solution is different from the first material solution in terms of the selected material.

[0104] In this embodiment, when preparing the multi-layer functional layer, the hollow openings on the mask plate that can be used can block the outflow of the functional material, and the quality of the functional material deposited in each hollow opening can tend to be inhibited, so as to ensure the uniformity of the film layers in each area of the display panel after forming.

[0105] Exemplarily, when the hole injection layer, hole transport layer, light-emitting layer, and electron transport layer on the display panel are all prepared using the above steps, a mask plate is provided for the hole injection layer, hole transport layer, light-emitting layer, and electron transport layer respectively, and the thermal decomposition temperature of the mask plate is lower than its annealing temperature. By setting the mask plate corresponding to the hole injection layer on the first electrode, and then setting the hole injection material on the first electrode through the hollow opening on the mask plate, after annealing treatment, the hole injection material forms the hole injection layer, and the mask plate is decomposed. Then, the above steps for preparing the hole injection layer are repeated with other materials (hole transport layer, light-emitting material, electron transport material) and another corresponding mask plate to obtain the hole transport layer, light-emitting layer, and electron transport layer formed sequentially on the hole injection layer. Finally, a second electrode is formed on the electron transport layer to obtain the display panel.

[0106] In some embodiments, the first material in the first material solution is a first light-emitting material, and the first functional layer is a first light-emitting layer;

[0107] Before the step of forming the second electrode on the functional layer in the above step S3, the following steps are further included:

[0108] Set a third mask plate on the first electrode; the position of the hollow opening of the third mask plate is different from the position of the hollow opening of the first mask plate relative to the position of the first electrode;

[0109] Set the second light-emitting material solution through the hollow opening of the third mask plate on the first electrode, and perform annealing treatment to make the second light-emitting material solution form a second light-emitting layer;

[0110] Then form a second electrode on the first light-emitting layer and the second light-emitting layer;

[0111] Wherein, the third mask plate is selected from the mask plates as described above;

[0112] The material of the first mask plate is the same as or different from the material of the third mask plate;

[0113] The second light-emitting material in the second light-emitting material solution has a different emission color from the first light-emitting material.

[0114] In this embodiment, the light-emitting materials of different colors are set at different positions on the first electrode. In this way, when any light-emitting material of a certain emission color is set on the first electrode, a mask area is formed at the non-hollow opening of the mask plate to block the current set light-emitting material from flowing to other areas on the first electrode, thereby avoiding the occurrence of color mixing problems and improving the color accuracy of the manufactured display panel.

[0115] Exemplarily, such as Figure 3The substrate 200 used in the method of the present application is shown. The substrate 200 has a plurality of pixel regions, and a plurality of pixel openings 210 are provided in each pixel region. Among them, the marks A1 to A3 are red light pixel regions, the marks B1 to B3 are green light pixel regions, and the marks C1 to C3 are blue light pixel regions. When preparing a light-emitting layer with a red light-emitting color on the substrate 200, a mask plate 100 corresponding to the red light pixel regions A1 to A3 with a hollow opening 110 is selected (see Figure 1 ), and after it is disposed on the substrate 200, a light-emitting material for red light is disposed into the pixel opening 210 through the hollow opening 110 on the mask plate 100. After annealing treatment, the light-emitting material for red light forms a light-emitting layer for red light, and the mask plate 100 is decomposed (see Figure 1 ). Then, other materials (light-emitting materials for green light, light-emitting materials for blue light) and another mask plate 100 corresponding thereto (see Figure 1 ) are used to repeat the above steps for preparing the light-emitting layer for red light, and light-emitting layers with red, green, and blue light-emitting colors formed on the substrate 200 are obtained.

[0116] In some embodiments, the material of the second electrode includes one or more of metals, carbon materials, and metal oxides. The metals include one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg; the carbon materials include one or more of graphite, carbon nanotubes, graphene, and carbon fibers; the metal oxides include doped or undoped metal oxides, including one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, and AMO, or a composite electrode including a metal sandwiched between doped or undoped transparent metal oxides. The composite electrodes include one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2.

[0117] An embodiment of the present application further provides a display panel, which is made by using the preparation method of the display panel as described above.

[0118] In this embodiment, since the material of the mask plate includes a thermally decomposable material, it can be decomposed during the annealing process of the functional layer. Thus, in the preparation of the functional layer, there is no need to perform the step of removing the mask plate, improving the preparation efficiency of the functional layer.

[0119] Secondly, when preparing the functional layer, the masking effect of the mask plate is used to block the dispersion of the functional solution for preparing the functional layer into other pixel openings, thereby improving the consistency of the volume of the functional solution in different pixel openings, improving the color accuracy of the prepared display panel, and further improving the yield of the display panel. Moreover, the equipment requirements for solution-based preparation are reduced, and the manufacturing method is very simple.

[0120] Exemplarily, as Figure 4 shown, the display panel includes a plurality of light-emitting devices, and each light-emitting device includes, sequentially stacked: a first electrode 300, a hole injection layer 400, a hole transport layer 500, a light-emitting layer 600, an electron transport layer 700, and a second electrode 800.

[0121] The technical solutions and technical effects of the present application will be described in detail below through specific embodiments. The following embodiments are only partial embodiments of the present application and do not specifically limit the present application.

[0122] The preparation method of a display panel including an RGB quantum dot light-emitting layer is as follows:

[0123] Step 1: Provide an ITO substrate as the first electrode. The ITO substrate has a red pixel region, a blue pixel region, and a green pixel region. The red pixel region, the blue pixel region, and the green pixel region correspond to different positions on the ITO substrate, and the red pixel region, the blue pixel region, and the green pixel region each have a plurality of pixel openings.

[0124] Step 2: Coat the PEDOT:PSS solution on the first electrode and perform an annealing treatment to deposit the PEDOT:PSS solution to form a 60-nm-thick hole injection layer. Among them, the temperature of the annealing treatment is 150°C, and the duration of the annealing treatment is 20 min.

[0125] Step 3: Coat the TFB solution on the hole injection layer and perform an annealing treatment to deposit the TFB solution to form a 40-nm-thick hole transport layer. Among them, the temperature of the annealing treatment is changed to 180°C, and the duration of the annealing treatment is changed to 60 min.

[0126] Step 4: Provide a mask plate. Among them, the mask plate corresponds to the red pixel region, and the first polymer film blocks the green pixel region and the blue pixel region;

[0127] The mask plate is set on the hole transport layer, and the mask plate film is laminated on the hole transport layer through an isostatic pressing device. Then, a hexane red quantum dot solution is coated on the mask plate. At this time, the hexane red quantum dot solution will enter the pixel openings on the red pixel area through the hollow openings on the mask plate. Next, annealing treatment is carried out to deposit the hexane red quantum dot solution in each pixel opening to form a 20-nm-thick red quantum dot light-emitting layer, and the mask plate is decomposed and removed; among them, the temperature of the annealing treatment is 180 °C, and the duration of the annealing treatment is 10 min; the material of the mask plate is polylactic acid;

[0128] Then, the above steps are repeated twice. In each repetition process, the hollow openings on the mask plate used correspond to different pixel areas; among them:

[0129] In the first repetition, the hexane red quantum dot solution is changed to a hexane green quantum dot solution; the hollow openings on the mask plate correspond to the green pixel area, and the mask plate covers the red pixel area and the blue pixel area; correspondingly, after the annealing treatment, the hexane green quantum dot solution is deposited to form a 15-nm-thick green quantum dot light-emitting layer;

[0130] In the second repetition, the hexane red quantum dot solution is changed to a hexane blue quantum dot solution; the hollow openings on the mask plate correspond to the blue pixel area, and the mask plate covers the red pixel area and the green pixel area; after the annealing treatment, the hexane blue quantum dot solution is deposited to form a 40-nm-thick blue quantum dot light-emitting layer, and an RGB quantum dot light-emitting layer is obtained.

[0131] Step Five: Coat the TPBi solution on the RGB quantum dot light-emitting layer and carry out annealing treatment to deposit the TPBi solution to form a 20-nm-thick electron transport layer; among them, the temperature of the annealing treatment is 120 °C, and the duration of the annealing treatment is 20 min.

[0132] Step Six: Evaporate Ag on the electron transport layer to obtain a 30-nm second electrode, and a display panel is obtained.

[0133] The display panel prepared as above is tested by an IVL test device, and the PEmax of the display panel can be obtained as 110 lm / W, and the device service life T95@1000 nit is 1100 h, indicating that the display panel prepared by this application has a high maximum power efficiency and service life.

[0134] Obviously, the embodiments described above are only a part of the embodiments of this application, rather than all of them. The accompanying drawings show the preferred embodiments of this application, but do not limit the patent scope of this application. This application can be implemented in many different forms. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosed content of this application more thorough and comprehensive. Although this application has been described in detail with reference to the foregoing embodiments, for those skilled in the art, they can still modify the technical solutions recorded in the foregoing specific embodiments, or perform equivalent replacements on some of the technical features. Any equivalent structure made by using the content of this application's specification and drawings, directly or indirectly applied in other related technical fields, is equally within the scope of patent protection of this application.

Claims

1. A mask plate, characterized in that, The material of the mask plate includes a thermal decomposition material.

2. The mask according to claim 1, characterized in that, The mask plate is provided with at least one hollow opening; And / or, the thermal decomposition temperature of the thermal decomposition material is less than or equal to 250 °C.

3. The mask according to claim 1, characterized in that, The thermal decomposition material is a polymer material; the polymer material includes polyolefin, polyvinyl alcohol, polyurethane, polyamide, polyester, polyimide; Optionally, the polymer material is selected from at least one of polylactic acid, polyvinyl alcohol, polyisobutene, polyoxymethylene, polyvinyl chloride, and polythiirubber.

4. The mask according to any one of claims 1 to 3, characterized in that The thickness of the mask plate is 0.1 - 10 μm; Preferably, the thickness of the mask plate is 1 - 10 μm; More preferably, the thickness of the mask plate is 5 - 10 μm.

5. A method for preparing a display panel, characterized in that, Including the following steps: Provide a first electrode and a first mask plate; Set the first mask plate on the first electrode, and then set a first material solution through the hollow opening of the first mask plate on the first electrode, and perform annealing treatment to make the first material solution form a first functional layer; Form a second electrode on the first functional layer to obtain a display panel; Wherein, the first mask plate is selected from the mask plates described in any one of claims 1 to 4.

6. The manufacturing method of the display panel according to claim 5, characterized in that The step of forming the second electrode on the first functional layer further includes: Set a second mask plate on the first functional layer; Set a second material solution through the hollow opening of the second mask plate on the first functional layer, and perform annealing treatment to make the second material solution form a second functional layer; Form a second electrode on the second functional layer; Wherein, the second mask plate is selected from the mask plates described in any one of claims 1 to 4; The material of the first mask plate is the same as or different from the material of the second mask plate; The material selected for the second material solution is different from the material selected for the first material solution.

7. The method for manufacturing a display panel according to claim 5, wherein, The first material in the first material solution is a first light-emitting material, and the first functional layer is a first light-emitting layer; And before the step of forming the second electrode on the first functional layer, the following steps are further included: Set a third mask plate on the first electrode; the position of the hollow opening of the third mask plate is different from the position of the hollow opening of the first mask plate relative to the position of the first electrode; Set a second light-emitting material solution through the hollow opening of the third mask plate on the first electrode, and perform annealing treatment to make the second light-emitting material solution form a second light-emitting layer; Then form a second electrode on the first light-emitting layer and the second light-emitting layer; Wherein, the third mask plate is selected from the mask plates described in any one of claims 1 to 4; The material of the first mask plate is the same as or different from the material of the third mask plate; The second light-emitting material in the second light-emitting material solution has a different emission color from the first light-emitting material.

8. The manufacturing method of the display panel according to any one of claims 5 to 7, characterized in that, The annealing time of the annealing treatment is 3 - 120 min, and the annealing temperature is 100 - 250 °C; And / or, the display panel further includes other functional layers, and the other functional layers include an electron functional layer and a hole functional layer; Optionally, the electronic functional layer includes an electron transport layer and an electron injection layer; the hole functional layer includes a hole transport layer and a hole injection layer.

9. The method for manufacturing a display panel according to claim 8, wherein, The materials of the first electrode and the second electrode each independently include one or more of a metal, a carbon material, and a metal oxide. The metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg; the carbon material includes one or more of graphite, carbon nanotubes, graphene, and carbon fibers; the metal oxide includes a doped or undoped metal oxide, including one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, and AMO, or a composite electrode including a metal sandwiched between doped or undoped transparent metal oxides, and the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2; and / or, The hole injection layer includes a hole injection material, and the hole injection material includes at least one of poly(3,4-ethylenedioxythiophene), poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinodimethane, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, copper polycarbonate, MoO3, WO3, transition metal oxides, and transition metal chalcogenides; the transition metal oxide is selected from at least one of NiOx, MoOx9, WOx, CrOx, or CuOx, and the transition metal chalcogenide is selected from at least one of MoSx, MoSex, WSx, WSex, or CuSx; and / or, The hole transport layer includes a hole transport material, and the hole transport material includes at least one of an organic hole transport material and an inorganic hole transport material. The organic hole transport material includes at least one of poly(9,9-dioctylfluorene-co-N-(4-butylphenyl)diphenylamine), polyvinylcarbazole, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine), poly(9,9-dioctylfluorene-co-bis-N,N-phenyl-1,4-phenylenediamine), 4,4',4''-tris(carbazol-9-yl)triphenylamine, 4,4'-bis(9-carbazolyl)biphenyl, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, doped graphene, undoped graphene, and C 60 and at least one of doped or undoped NiO, WO3, MoO3, and CuO; and / or, The luminescent material includes at least one of single-structure quantum dots and core-shell structure quantum dots. The material of the single-structure quantum dots, the core material of the core-shell structure quantum dots, and the shell material of the core-shell structure quantum dots are each independently selected from at least one of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. Among them, the II-VI group compounds are selected from at least one of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; the IV-VI group compounds are selected from at least one of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe; the III-V group compounds are selected from at least one of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, or InAlPSb; the I-III-VI group compounds are selected from at least one of CuInS2, CuInSe2, and AgInS2; and / or, The electron transport layer includes an electron transport material, and the electron transport material includes an inorganic material and / or an organic material; the inorganic material is selected from one or more of doped or undoped zinc oxide, barium oxide, aluminum oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, lithium titanium oxide, aluminum zinc oxide, manganese zinc oxide, tin zinc oxide, lithium zinc oxide, indium tin oxide, cadmium sulfide, zinc sulfide, molybdenum sulfide, tungsten sulfide, copper sulfide, zinc stannide, indium phosphide, gallium phosphide, copper indium sulfide, copper gallium sulfide, barium titanate, and the doping elements include at least one of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, gadolinium; the organic material is selected from at least one of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, hydroxyquinoline compounds, polythiophene compounds, perylene diimide compounds, fullerene compounds.

10. A display panel, characterized in that, Manufactured by using the manufacturing method of the display panel according to any one of claims 5 to 9.

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