Evaporation source unit, film forming apparatus, and film forming method

Abstract

Provided is an evaporation source unit that forms a film on a substrate that moves relative to each other in a movement direction, the evaporation source unit being characterized by comprising: a plurality of evaporation sources each independently including a container in which an evaporation material to be adhered to the substrate is accommodated, and a heating means for heating the evaporation material to be adhered to the substrate; the heating component is used for heating the evaporation substance accommodated in the container; and a control means for controlling each of the plurality of evaporation sources, the plurality of evaporation sources including a first evaporation source, a second evaporation source, and a third evaporation source, the first evaporation source, the second evaporation source, and the third evaporation source are sequentially arranged from the center of a layout region of the plurality of evaporation sources along an intersecting direction intersecting with the moving direction, and the control unit controls the first evaporation source, the second evaporation source, and the third evaporation source. The film forming rate of the second evaporation source is smaller than the film forming rate of the first evaporation source and the film forming rate of the third evaporation source.

Description

Technical Field

[0001] The present invention relates to an evaporation source unit, a film forming apparatus, and a film forming method. Background Art

[0002] In the manufacture of an organic EL display or the like, a film (thin film) is formed on a substrate by causing a vapor deposition material released from an evaporation source to adhere to the substrate. The following technique is disclosed in Patent Document 1: Film formation is performed while rotating a substrate using a plurality of evaporation sources.

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2019-218623 Summary of the Invention

[0006] Problems to be Solved by the Invention

[0007] However, in recent years, since substrates have been continuously enlarged, it has become difficult to rotate the substrate during film formation, and there is a possibility that the film thickness uniformity of the film formed on the substrate may decrease.

[0008] The present invention provides a technique that is advantageous for uniformizing the film thickness of a film formed on a substrate.

[0009] Means for Solving the Problems

[0010] An evaporation source unit according to an aspect of the present invention forms a film on a substrate that relatively moves in a moving direction, and is characterized in that the evaporation source unit includes: a plurality of evaporation sources, each of the plurality of evaporation sources independently includes a container and a heating member, the container houses a vapor deposition material to be adhered to the substrate, and the heating member heats the vapor deposition material housed in the container; and a control member that controls each of the plurality of evaporation sources, the plurality of evaporation sources include a first evaporation source, a second evaporation source, and a third evaporation source, the first evaporation source, the second evaporation source, and the third evaporation source are arranged in sequence from the center of the layout area of the plurality of evaporation sources along an intersection direction that intersects the moving direction, and the control member controls the first evaporation source, the second evaporation source, and the third evaporation source such that the film forming rate of the second evaporation source is smaller than the film forming rates of the first evaporation source and the third evaporation source.

[0011] Advantages of the Invention

[0012] According to the present invention, for example, a technique that is advantageous for uniformizing the film thickness of a film formed on a substrate can be provided.

[0013] Other features and advantages of the present invention will become apparent from the following description with reference to the accompanying drawings. In addition, in the drawings, the same or similar structures are denoted by the same reference numerals. Description of the Drawings

[0014] The drawings are included in the specification and form a part thereof. The drawings illustrate embodiments of the present invention and, together with the description of the embodiments, are used to explain the principles of the present invention.

[0015] Figure 1 is a top view schematically showing the structure of a film-forming system having a film-forming apparatus as one embodiment of the present invention.

[0016] Figure 2 is a front view schematically showing the structure of a film-forming apparatus as one embodiment of the present invention.

[0017] Figure 3 is a diagram for explaining the structure of an evaporation source unit.

[0018] Figure 4 is a diagram for explaining the structure of an evaporation source unit.

[0019] Figure 5 is a cross-sectional view schematically showing the structure of an evaporation source.

[0020] Figure 6A is a diagram showing Example 1.

[0021] Figure 6B is a diagram showing Example 2.

[0022] Figure 6C is a diagram showing a comparative example. Detailed Description of Embodiments

[0023] Hereinafter, embodiments will be described in detail with reference to the drawings. In addition, the following embodiments do not limit the technical solutions related to the claims, and moreover, not all combinations of the features described in the embodiments are necessarily required for the invention. Two or more of the multiple features described in the embodiments can also be arbitrarily combined. In addition, the same or similar structures are denoted by the same reference numerals, and repeated descriptions are omitted.

[0024] Figure 1 is a top view schematically showing the structure of a film-forming system SY having a film-forming apparatus 1 as one embodiment of the present invention. The film-forming system SY is a system that performs a film-forming process on a substrate that is carried in and discharges the substrate after the film-forming process. For example, by arranging a plurality of film-forming systems SY, a production line of electronic devices is constituted. As the electronic device, for example, a display panel of an organic EL display device for a smartphone can be cited.

[0025] AsFigure 1 As shown, the film forming system SY includes a film forming apparatus 1, a loading chamber 60, a substrate transfer chamber 62, an unloading chamber 64, and a mask storage chamber 66. In addition, the structure of the film forming apparatus 1 will be described in detail later.

[0026] The substrate 100 to be subjected to film forming processing in the film forming apparatus 1 is carried into the loading chamber 60 from the outside of the film forming apparatus 1. A transfer robot 620 for transferring the substrate 100 is provided in the substrate transfer chamber 62. The transfer robot 620 transfers the substrate 100 carried into the loading chamber 60 to the film forming apparatus 1. In addition, the transfer robot 620 transfers the substrate 100 after the film forming processing in the film forming apparatus 1 to the unloading chamber 64. The substrate 100 transferred to the unloading chamber 64 by the transfer robot 620 is unloaded from the unloading chamber 64 to the outside of the film forming system SY. In addition, in the case where a plurality of film forming systems SY are arranged, the unloading chamber 64 of the upstream film forming system SY can also be used as the substrate transfer chamber 62 of the downstream film forming system SY. The mask 101 used for the film forming processing in the film forming apparatus 1 is stored in the mask storage chamber 66. The mask 101 stored in the mask storage chamber 66 is transferred to the film forming apparatus 1 by the transfer robot 620.

[0027] The inside of the film forming apparatus 1 and each chamber constituting the film forming system SY is maintained in a vacuum state by an exhaust mechanism such as a vacuum pump. In addition, in the present embodiment, the "vacuum state" means a reduced pressure state in which a gas having a pressure lower than that of the atmosphere is filled.

[0028] Figure 2 It is a front view schematically showing the structure of the film forming apparatus 1 as one mode of the present invention. In addition, in the following drawings, the arrows X and Y represent horizontal directions orthogonal to each other, and the arrow Z represents the vertical direction (vertical direction).

[0029] The film forming apparatus 1 is an apparatus that performs a film forming process of forming a film (thin film) on a substrate by causing a vapor deposition material released from an evaporation source to adhere (vapor deposition) to the substrate while moving the evaporation source relative to the substrate. The film forming apparatus 1 is used, for example, as a manufacturing apparatus for a display panel of an organic EL display device for a smartphone. As described above, by arranging and setting a plurality of them, a production line thereof is constituted. As the material of the substrate on which the film forming process is performed in the film forming apparatus 1, glass, resin, metal, etc. can be appropriately selected, and a material having a resin layer such as polyimide formed on glass is particularly preferable. As the vapor deposition material, an organic material, an inorganic material (for example, metal, metal oxide), etc. can be used. In addition, the film forming apparatus 1 is not limited to the manufacture of a display panel of an organic EL display device, and can also be applied as a manufacturing apparatus for electronic devices such as a display device (flat panel display), a thin film solar cell, and an organic optoelectronic conversion element (organic thin film imaging element), and optical members. Further, in the present embodiment, the film forming apparatus 1 performs a film forming process on a glass substrate of G8H size (1100 mm × 2500 mm, 1250 mm × 2200 mm), but the size of the substrate on which the film forming apparatus 1 performs the film forming process can be appropriately set.

[0030] As Figure 2 shown, the film forming apparatus 1 includes an evaporation source unit 10 and a plurality of film forming stages 30A and 30B. The evaporation source unit 10 and the film forming stages 30A and 30B are disposed inside a chamber 45 that is maintained in a vacuum state during the film forming process (during use). In the present embodiment, the plurality of film forming stages 30A and 30B are disposed separately in the upper part inside the chamber 45 in the X direction, and the evaporation source unit 10 is disposed below them. Further, a plurality of loading / unloading ports (not shown) for loading and unloading the substrate 100 are provided in the chamber 45.

[0031] The film forming apparatus 1 further includes a power supply 41 that supplies power to the evaporation source unit 10 and an electrical connection portion 42 that electrically connects the evaporation source unit 10 and the power supply 41. The electrical connection portion 42 includes electrical wiring built in an arm that can move in the horizontal direction, and is configured to be able to supply power from the power supply 41 to the evaporation source unit 10 that can move in the X direction.

[0032] The film forming apparatus 1 further includes a control unit 43 that controls each component (operation) of the film forming apparatus 1. The control unit 43 is constituted by a computer (information processing device) including a processor represented by a CPU, a memory such as a RAM and a ROM, and various interfaces, for example. The control unit 43 reads a program stored in the ROM into the RAM and executes it, thereby realizing various operations and processes in the film forming apparatus 1. In addition, instead of the control unit 43, it is also possible to directly control each component of the film forming apparatus 1 by using a main computer that collectively controls the film forming system SY.

[0033] The film-forming stage 30A is a stage for performing a film-forming process on the substrate 100A. The film-forming stage 30A supports the substrate 100A and the mask 101A, and adjusts the relative positions of the substrate 100A and the mask 101A. The film-forming stage 30A includes a substrate support portion 32A, a mask support portion 34A, a support column 35A, and an alignment mechanism 36A.

[0034] The substrate support portion 32A supports the substrate 100A. In the present embodiment, the substrate support portion 32A supports the substrate 100A such that the short side of the substrate 100A is along the X direction and the long side of the substrate 100A is along the Y direction. The substrate support portion 32A supports the edge of the substrate 100A from the lower side of the substrate 100A. However, the substrate support portion 32A may support the substrate 100A by clamping the edge of the substrate 100A, or may support the substrate 100A by adsorbing the substrate 100A using an electrostatic chuck or an adhesive chuck, etc. The substrate support portion 32A receives the substrate 100A carried into the film-forming system SY via the transfer robot 620 provided in the substrate transfer chamber 62. In addition, a lifting mechanism (not shown) capable of lifting the substrate support portion 32A is provided in the substrate support portion 32A, and the substrate 100A received from the transfer robot 620 can be overlapped on the mask 101A supported by the mask support portion 34A. This lifting mechanism can apply techniques well-known in the art such as a ball screw mechanism.

[0035] The mask support portion 34A supports the mask 101A. In the present embodiment, an opening (not shown) is provided in the mask support portion 34A, and the evaporation substance adheres (scatters) to the film-forming surface (the surface on which the film is formed) of the substrate 100A overlapping the mask 101A via this opening. The mask support portion 34A is supported by the chamber 45 via the support column 35A.

[0036] The alignment mechanism 36A aligns (positions) the relative positions of the substrate 100A and the mask 101A. The alignment mechanism 36A performs the alignment of the substrate 100A supported by the substrate support portion 32A and the mask 101A supported by the mask support portion 34A by adjusting the relative positions in the horizontal direction between the substrate support portion 32A and the mask support portion 34A. Regarding the alignment of the substrate 100A and the mask 101A, techniques well-known in the art can be applied. For example, first, the alignment mechanism 36A uses a camera (not shown) to detect the alignment marks respectively formed on the substrate 100A and the mask 101A. Then, the alignment mechanism 36A adjusts the positional relationship between the substrate 100A and the mask 101A so that the relationship between the position of the substrate 100A and the position of the mask 101A obtained by detecting these marks satisfies a specified condition. Specifically, the mark formed on the substrate 100A is overlapped with the mark formed on the mask 101A, the offset amount of these marks is detected using a camera, and the position of the substrate 100A is adjusted in a manner that satisfies the specified condition (in a manner that falls within the allowable range).

[0037] When aligning the substrate 100A and the mask 101A using the alignment mechanism 36A, the substrate support portion 32A overlaps the supported substrate 100A on the mask 101A. In a state where the substrate 100A and the mask 101A are overlapped, the substrate 100A is subjected to a film-forming process using the evaporation source unit 10.

[0038] The film-forming stage 30B includes the same structure as the film-forming stage 30A. The film-forming stage 30B includes a substrate support portion 32B, a mask support portion 34B, a support column 35B, and an alignment mechanism 36B. The substrate support portion 32B, the mask support portion 34B, the support column 35B, and the alignment mechanism 36B respectively correspond to the substrate support portion 32A, the mask support portion 34A, the support column 35A, and the alignment mechanism 36A.

[0039] In the present embodiment, the film-forming apparatus 1 has a plurality of film-forming stages 30A and 30B, and is embodied as a so-called dual-stage film-forming apparatus. Therefore, in the film-forming stage 30A, during the film-forming process (such as evaporation) of the substrate 100A, the alignment of the substrate 100B and the mask 101B can be performed in the film-forming stage 30B, and the film-forming process can be efficiently performed.

[0040] Next, with reference to Figure 3 and Figure 4 , the evaporation source unit 10 will be described. Here, an overview of each element constituting the evaporation source unit 10 will be described, and the configuration structure and operation example of the evaporation source unit 10 will be described in detail later. Figure 3 is a diagram for explaining the structure of the evaporation source unit 10, and is a diagram schematically showing the evaporation source unit 10 from the lateral direction (Y direction).Figure 4 This is a diagram for explaining the structure of the evaporation source unit 10, and is a diagram schematically showing the evaporation source unit 10 from above (Z direction).

[0041] In the present embodiment, the evaporation source unit 10 is a unit for performing a film forming process on the substrate 100 by discharging a vapor deposition material while moving in the X direction. The evaporation source unit 10 includes a plurality of evaporation sources 11a to 11r, a plurality of monitoring devices 12a to 12r, baffles 161 to 163, and a moving unit 20.

[0042] Figure 5 This is a cross-sectional view schematically showing the structure of the evaporation sources 11a to 11r. The plurality of evaporation sources 11a to 11r respectively discharge a vapor deposition material. As Figure 5 shown, the plurality of evaporation sources 11a to 11r respectively include a material container 111 and a heating unit 112.

[0043] The material container 111 is a crucible that houses the vapor deposition material to be attached to the substrate 100 inside. A discharge portion 1111 is provided on the upper portion of the material container 111, and the discharge portion 1111 is used to discharge the vapor deposition material evaporated inside the material container 111 to the outside of the material container 111. In the present embodiment, the discharge portion 1111 is configured as an opening (discharge port) formed on the upper surface of the material container 111, but is not limited thereto. For example, the function of the discharge portion 1111 can also be realized by forming the material container 111 using a cylindrical member or the like. In addition, as the discharge portion 1111, a plurality of openings may be provided on the upper surface of the material container 111.

[0044] The heating unit 112 heats the vapor deposition material housed in the material container 111 and evaporates it. Preferably, the heating unit 112 is provided so as to cover the entire material container 111, for example. In the present embodiment, the heating unit 112 is specifically embodied as a sheathed heater using an electric heating wire, and Figure 5 shows a cross-section when the electric heating wire of the sheathed heater is wound around the material container 111.

[0045] The control unit 43 controls the heating of the vapor deposition material by the heating unit 112. In the present embodiment, the plurality of evaporation sources 11a to 11r respectively independently include the material container 111 and the heating unit 112. Therefore, the control unit 43 can independently control the heating (evaporation) of the vapor deposition material by the plurality of evaporation sources 11a to 11r.

[0046] Return to Figure 3 and Figure 4, the plurality of evaporation sources 11a to 11r are roughly divided into three evaporation source groups 17A to 17C that are separated from each other along the moving direction (X direction) of the evaporation source unit 10. The evaporation source group 17A includes a plurality of evaporation sources 11a to 11f arranged along the crossing direction (Y direction) that crosses the moving direction of the evaporation source unit 10. The evaporation source group 17B includes a plurality of evaporation sources 11g to 11l arranged along the crossing direction that crosses the moving direction of the evaporation source unit 10. The evaporation source group 17C includes a plurality of evaporation sources 11m to 11r arranged along the crossing direction that crosses the moving direction of the evaporation source unit 10.

[0047] In the present embodiment, the three evaporation source groups 17A to 17C are arranged in the order of evaporation source group 17A, evaporation source group 17B, and evaporation source group 17C in the moving direction of the evaporation source unit 10. Therefore, if we focus on the evaporation sources included in each of the evaporation source groups 17A to 17C, the evaporation sources 11d, 11j, and 11p are arranged in sequence along the moving direction of the evaporation source unit 10, for example.

[0048] The three evaporation source groups 17A to 17C can emit mutually different evaporation materials. For example, the evaporation source group 17A emits magnesium (Mg), the evaporation source group 17B emits silver (Ag), and the evaporation source group 17C emits ytterbium (Yb) (or lithium fluoride (LiF)). In this case, in the evaporation source unit 10, the control unit 43 controls the operations of the shutters 161 to 163 to form a lithium fluoride layer (first layer) and a silver-magnesium (AgMg) layer (second layer) on the substrate 100. In addition, these evaporation materials (film-forming materials) are for illustration and are not limited.

[0049] A plurality of monitoring devices 12a to 12r are provided corresponding to the plurality of evaporation sources 11a to 11r. The plurality of monitoring devices 12a to 12r respectively monitor the states (emission states) of the evaporation materials emitted from the plurality of evaporation sources 11a to 11r, for example, monitor the rates of the evaporation materials (evaporation rates (film-forming rates)). As Figure 3As shown, the monitoring devices 12a to 12r include a housing 121 and a quartz oscillator 123, and the quartz oscillator 123 is provided inside the housing 121 as a film thickness sensor. The evaporation material released from the evaporation source 11 and introduced into the interior of the housing 121 via the introduction portion 122 provided in the housing 121 adheres to the quartz oscillator 123. The vibration frequency of the quartz oscillator 123 varies corresponding to the amount of the evaporation material (adhesion amount) adhering to the quartz oscillator 123. Therefore, the control unit 43 can calculate the film thickness of the evaporation material deposited (evaporated) on the substrate 100 based on the vibration frequency of the quartz oscillator 123. Since the amount of the evaporation material adhering to the quartz oscillator 123 per unit time is correlated with the amount of the evaporation material released from the evaporation source 11, as a result, the monitoring devices 12a to 12r can monitor the states of the evaporation materials released from the plurality of evaporation sources 11.

[0050] In the present embodiment, each of the monitoring devices 12a to 12r independently monitors the states of the evaporation materials released from the evaporation sources 11a to 11r. In addition, the control unit 43 independently controls the evaporation sources 11a to 11r (the outputs of the respective heating units) based on the monitoring results of the monitoring devices 12a to 12r. In other words, the control unit 43 controls the film formation rates of the evaporation sources 11a to 11r respectively based on the rates of the evaporation materials monitored by the respective monitoring devices 12a to 12r.

[0051] The restricting unit 14 restricts the release ranges of the evaporation materials released from the plurality of evaporation sources 11a to 11r. In the present embodiment, the restricting unit 14 includes a plurality of plate members 141 to 144. The plate members 141 and 142 restrict the release ranges in the X direction of the evaporation materials released from the plurality of evaporation sources 11a to 11f. The plate members 142 and 143 restrict the release ranges in the X direction of the evaporation materials released from the plurality of evaporation sources 11g to 11l. The plate members 143 and 144 restrict the release ranges in the X direction of the evaporation materials released from the plurality of evaporation sources 11g to 11r.

[0052] Cylindrical members 141a to 141l through which the evaporation materials introduced (scattered) into the monitoring devices 12a to 12l pass are provided in the plate member 141. Cylindrical members 142g to 142l through which the evaporation materials introduced into the monitoring devices 12g to 12l pass are provided in the plate member 142. Cylindrical members 144m to 144l through which the evaporation materials introduced into the monitoring devices 12m to 12r pass are provided in the plate member 144. The cylindrical members 141a to 141l, 142g to 142l, and 144m to 144l help to suppress a decrease in the monitoring accuracy of the monitoring devices due to the evaporation materials released from adjacent evaporation sources entering the monitoring devices outside the monitoring target (so-called crosstalk).

[0053] The baffles 161 to 163 control the scattering of the vapor deposition material emitted from the evaporation source groups 17A to 17C toward the substrate 100. The baffles 161 to 163 are arranged so as to be displaceable between a blocking position for blocking the scattering of the vapor deposition material emitted from the evaporation source groups 17A to 17C toward the substrate 100 and an allowing position for allowing the scattering of the vapor deposition material toward the substrate 100. For example, the baffle 161 is arranged so as to be displaceable between a blocking position for blocking the scattering of the vapor deposition material emitted from the evaporation sources 11a to 11f included in the evaporation source group 17A toward the substrate 100 and an allowing position for allowing the scattering of the vapor deposition material toward the substrate 100. The baffles 162 and 163 are also arranged in the same manner as the baffle 161 so as to be displaceable between the blocking position and the allowing position.

[0054] The baffle 161 includes a rotation shaft 1611 having an axial direction in the crossing direction (Y direction) crossing the moving direction of the evaporation source unit 10 and a shielding member 1612 provided on the rotation shaft 1611. The baffle 161 is displaced between the blocking position and the allowing position by rotating the shielding member 1612 about the rotation shaft 1611 to perform an opening / closing operation. Similarly, the baffle 162 includes a rotation shaft 1621 and a shielding member 1622, and the baffle 163 includes a rotation shaft 1631 and a shielding member 1632.

[0055] The rotation shaft 1611 of the baffle 161 is arranged to be offset in the moving direction (X direction) of the evaporation source unit 10 with respect to the emission portions 1111 of the evaporation sources 11a to 11f. Similarly, the rotation shaft 1621 of the baffle 162 is arranged to be offset in the moving direction of the evaporation source unit 10 with respect to the emission portions 1111 of the evaporation sources 11g to 11l. In addition, the rotation shaft 1631 of the baffle 163 is arranged to be offset in the moving direction of the evaporation source unit 10 with respect to the emission portions 1111 of the evaporation sources 11p to 11r. Thereby, when the baffles 161 to 163 are in the allowing position, interference between the baffles 161 to 163 and the emission ranges of the evaporation sources 11a to 11r can be suppressed.

[0056] In addition, in the present embodiment, the height of the rotation shaft 1611 of the baffle 161 is different from the height of the rotation shaft 1621 of the baffle 162. Thereby, when the baffles 161 and 162 are opened and closed simultaneously, interference between the baffle 161 and the baffle 162 can be suppressed, and the baffles 161 and 162 can be arranged compactly in the X direction.

[0057] In addition, in the present embodiment, the rotation axis 1621 of the baffle 162 that covers above the evaporation source group 17B disposed at a position on the +X direction side with respect to the evaporation source group 17A is disposed offset toward the +X direction with respect to the emission portion 1111 of the evaporation sources 11g to 11l. On the other hand, the rotation axis 1611 of the baffle 161 that covers above the evaporation source group 17A disposed at a position on the -X direction side with respect to the evaporation source group 17B is disposed offset toward the -X direction with respect to the emission portion 1111 of the evaporation sources 11a to 11f. Therefore, the baffles 161 and 162 have a structure like double doors. Thus, in the case of performing co-evaporation using the evaporation source group 17A and the evaporation source group 17B, it is possible to suppress interference between the baffle 161 and the emission range of the evaporation source group 17B or interference between the baffle 162 and the emission range of the evaporation source group 17A.

[0058] The moving unit 20 moves the evaporation source unit 10 in the moving direction (X direction). Specifically, it moves the plurality of evaporation sources 11a to 11r and the plurality of monitoring devices 12a to 12r in the moving direction (X direction). In the present embodiment, by moving the evaporation source unit 10 relative to the substrate 100 using the moving unit 20 while causing the evaporation material emitted from the evaporation source unit 10 to adhere (evaporate) to the substrate 100, a film forming process of forming a film (layer) of the evaporation material on the substrate 100 is performed.

[0059] As a component provided in the evaporation source unit 10, the moving unit 20 includes a motor (not shown), a pinion 202 provided on a shaft member that rotates by driving of the motor, and a guide member 203. In addition, the moving unit 20 further includes a rack (not shown) that engages with the pinion 202 and a guide rail 206 for the guide member 203 to slide. By causing the pinion 202 that rotates by driving of the motor to engage with the rack, the evaporation source unit 10 is moved in the X direction along the guide rail 206.

[0060] In the film forming apparatus 1 configured as such, in order to improve the film thickness uniformity of the film of the evaporation material formed on the substrate 100, it is necessary to accurately control the adhesion amount of the evaporation material emitted from the evaporation source unit 10 and adhering to the substrate 100. Therefore, in the present embodiment, in the control unit 43, the adhesion amounts of the evaporation materials emitted from the plurality of evaporation sources 11a to 11r and adhering to the substrate 100, that is, the film forming rates of the respective evaporation sources 11a to 11r, are independently controlled. At this time, the present inventors found that setting the film forming rates of the plurality of evaporation sources 11a to 11r to different film forming rates, rather than the same film forming rate, is beneficial to uniformize the film thickness of the film of the evaporation material formed on the substrate 100.

[0061] Hereinafter, in the film formation process (film formation method) of the present embodiment, the control of the film formation rate of each of the evaporation sources 11a to 11r by the control unit 43 will be described. Here, attention is paid to the evaporation sources 11a, 11b, and 11c included in the evaporation source group 17A. As Figure 4 shown, the evaporation sources 11a, 11b, and 11c are arranged along the crossing direction (Y direction) that crosses the moving direction (X direction) of the evaporation source unit 10. The evaporation source 11c is the evaporation source (first evaporation source) arranged at the position closest to the center CT of the layout area of the plurality of evaporation sources 11a to 11f. The evaporation source 11b is the evaporation source (second evaporation source) arranged at the position immediately adjacent to the evaporation source 11c and close to the center CT of the layout area of the plurality of evaporation sources 11a to 11f. The evaporation source 11a is the evaporation source (third evaporation source) arranged at the position farthest from the center CT of the layout area of the plurality of evaporation sources 11a to 11f. In this way, the evaporation sources 11a, 11b, and 11c are arranged in the order of the evaporation source 11c, the evaporation source 11b, and the evaporation source 11c starting from the center CT of the layout area of the plurality of evaporation sources 11a to 11f.

[0062] In the present embodiment, the control unit 43 controls each of the evaporation sources 11a, 11b, and 11c (the output of each heating unit) so that the film formation rates of the plurality of evaporation sources 11a, 11b, and 11c include two different film formation rates. Specifically, the film formation rate of the evaporation source 11b is made different from the film formation rates of the evaporation source 11c and the evaporation source 11a. More specifically, the film formation rate of the evaporation source 11b is made smaller than the film formation rates of the evaporation source 11c and the evaporation source 11a. Moreover, the film formation rate of the evaporation source 11a is made equal to the film formation rate of the evaporation source 11c. In this way, in the present embodiment, the evaporation sources 11a to 11c are controlled such that the film formation rate of the evaporation source 11c = the film formation rate of the evaporation source 11a > the film formation rate of the evaporation source 11b. Thereby, as shown by the numerical values in the following examples, compared with the case where the film formation rates of the evaporation sources 11a to 11r are the same, the film thickness of the vapor deposition material formed on the substrate 100 can be made uniform.

[0063] In addition, in the present embodiment, the control unit 43 may also control each of the evaporation sources 11a, 11b, and 11c (the outputs of the respective heating units) so that the film formation rates of the plurality of evaporation sources 11a, 11b, and 11c include three different film formation rates. Specifically, the film formation rate of the evaporation source 11b is made smaller than the film formation rates of the evaporation source 11c and the evaporation source 11a, and the film formation rate of the evaporation source 11a is made larger than the film formation rate of the evaporation source 11c. Thus, in the present embodiment, it may also be that the evaporation sources 11a to 11c are controlled such that the film formation rate of the evaporation source 11a > the film formation rate of the evaporation source 11c > the film formation rate of the evaporation source 11b. Thereby, as shown by the numerical values in the following examples, compared with the case where the film formation rates of the evaporation sources 11a to 11r are the same, the film thickness of the vapor deposition material formed on the substrate 100 can be made uniform.

[0064] In addition, in the present embodiment, the evaporation sources 11a, 11b, and 11c included in the evaporation source group 17A are focused on, but for the evaporation sources 11d, 11e, and 11f, it is also sufficient to control the film formation rate in the same manner. For example, for the evaporation source 11d disposed at the position closest to the center CT of the layout region of the plurality of evaporation sources 11a to 11f, it is sufficient to control the film formation rate in the same manner as the evaporation source 11c. For the evaporation source 11e disposed at the position immediately adjacent to the evaporation source 11d and closest to the center CT of the layout region of the plurality of evaporation sources 11a to 11f, it is sufficient to control the film formation rate in the same manner as the evaporation source 11b. For the evaporation source 11f disposed at the position farthest from the center CT of the layout region of the plurality of evaporation sources 11a to 11f, it is sufficient to control the film formation rate in the same manner as the evaporation source 11a.

[0065] In addition, for the evaporation sources 11g to 11l included in the evaporation source group 17B, it is also sufficient to control the film formation rate according to the distance from the center of the layout region of the plurality of evaporation sources 11g to 11l in the same manner as the evaporation sources 11a to 11f included in the evaporation source group 17A. Moreover, for the evaporation sources 11m to 11r included in the evaporation source group 17C, it is also sufficient to control the film formation rate according to the distance from the center of the layout region of the plurality of evaporation sources 11m to 11r in the same manner as the evaporation sources 11a to 11f included in the evaporation source group 17A.

[0066] In addition, the present inventors have found that the distance (interval) between two evaporation sources adjacent to each other in the intersecting direction (Y direction) intersecting the moving direction (X direction) of the evaporation source unit 10 is related to the uniformity of the film thickness of the vapor deposition substance formed on the substrate 100. For example, the distance between two evaporation sources adjacent to each other in the intersecting direction intersecting the moving direction of the evaporation source unit 10 can contribute to uniformity of the film thickness of the vapor deposition substance formed on the substrate 100 by making the outer side of the layout area of ​​the plurality of evaporation sources shorter than the central side.

[0067] Specifically, if the evaporation sources 11a, 11b, and 11c included in the evaporation source group 17A are focused, the distance L3 between the evaporation source 11b and the evaporation source 11a is made shorter than the distance L2 between the evaporation source 11c and the evaporation source 11b. In addition, the distance (the distance between the evaporation source 11c and the evaporation source 11d) which is twice the distance L1 between the evaporation source 11c and the center CT of the layout area of ​​the plurality of evaporation sources 11a to 11f is made longer than the distance L2 between the evaporation source 11c and the evaporation source 11b. In this way, the distance between two evaporation sources adjacent to each other in the intersecting direction intersecting the moving direction of the evaporation source unit 10 is shortened as the distance is farther from the center CT of the layout area of ​​the plurality of evaporation sources 11a to 11f.

[0068] Furthermore, the distance twice the distance L1 between the evaporation source 11c and the center CT of the layout area of ​​the plurality of evaporation sources 11a to 11f (the distance between the evaporation source 11c and the evaporation source 11d) may not necessarily be longer than the distance L2 between the evaporation source 11c and the evaporation source 11b. In other words, the distance twice the distance L1 between the evaporation source 11c and the center CT of the layout area of ​​the plurality of evaporation sources 11a to 11f may be shorter than the distance L2 between the evaporation source 11c and the evaporation source 11b. However, in this case, the distance twice the distance L1 between the evaporation source 11c and the center CT of the layout area of ​​the plurality of evaporation sources 11a to 11f needs to be longer than the distance L3 between the evaporation source 11b and the evaporation source 11c. Thus, the distance between two evaporation sources adjacent to each other in the intersecting direction intersecting the moving direction of the evaporation source unit 10 satisfies the requirement that the outer side of the layout area of ​​the plurality of evaporation sources is shorter than the center side. Therefore, the film thickness of the film of the vapor deposition substance formed on the substrate 100 is helped to be uniform.

[0069] Here, as Example 1, Example 2 and Comparative Example, Figure 6A , Figure 6B and Figure 6C In the figure, the evaporation material emitted from the evaporation sources 11a to 11f is set to silver (Ag) and a layer having The film thickness results in a film with a thickness of Figure 6A ,Figure 6B and Figure 6C Only numerical examples related to evaporation sources 11a, 11b, and 11c among the evaporation sources 11a to 11f are shown. This is because the evaporation sources 11a, 11b, and 11c and the evaporation sources 11f, 11e, and 11d are arranged symmetrically with respect to the center CT of the layout area of the evaporation sources 11a to 11f.

[0070] In Example 1, the film formation rates of the plurality of evaporation sources 11a to 11c include two different film formation rates. Specifically, as Figure 6A shown, the film formation rate of the evaporation source 11b (11e) is made smaller than the film formation rates of the evaporation sources 11a (11f) and 11c (11d), and the film formation rate of the evaporation source 11a is made equal to the film formation rate of the evaporation source 11c. Regarding the ratio of the film formation rates between the respective evaporation sources, the ratio of the film formation rate of the evaporation source 11c, the film formation rate of the evaporation source 11b, and the film formation rate of the evaporation source 11a was set to 1.00:0.58:1.00. The evaporation source 11c is arranged at a position 316 mm away from the center CT of the layout area of the plurality of evaporation sources 11a to 11f, the evaporation source 11b is arranged at a position 863 mm away, and the evaporation source 11a is arranged at a position 1200 mm away. Therefore, twice the distance L1 between the evaporation source 11c and the center CT of the layout area of the plurality of evaporation sources 11a to 11f is 632 mm, the distance L2 between the evaporation source 11c and the evaporation source 11b is 547 mm, and the distance L3 between the evaporation source 11b and the evaporation source 11c is 337 mm.

[0071] In Example 2, the film formation rates of the plurality of evaporation sources 11a to 11c include three different film formation rates. Specifically, as Figure 6B shown, the film formation rate of the evaporation source 11b (11e) is made smaller than the film formation rates of the evaporation sources 11a (11f) and 11c (11d), and the film formation rate of the evaporation source 11a is made larger than the film formation rate of the evaporation source 11c. Regarding the ratio of the film formation rates between the respective evaporation sources, the ratio of the film formation rate of the evaporation source 11c, the film formation rate of the evaporation source 11b, and the film formation rate of the evaporation source 11a was set to 1.00:0.85:1.41. The evaporation source 11c is arranged at a position 240 mm away from the center CT of the layout area of the plurality of evaporation sources 11a to 11f, the evaporation source 11b is arranged at a position 730 mm away, and the evaporation source 11a is arranged at a position 1200 mm away. Therefore, twice the distance L1 between the evaporation source 11c and the center CT of the layout area of the plurality of evaporation sources 11a to 11f is 480 mm, the distance L2 between the evaporation source 11c and the evaporation source 11b is 490 mm, and the distance L3 between the evaporation source 11b and the evaporation source 11c is 470 mm.

[0072] In the comparative example, the film formation rates of the plurality of evaporation sources 11a to 11c were made the same film formation rate. Therefore, the ratio of the film formation rate of the evaporation source 11c, the film formation rate of the evaporation source 11b, and the film formation rate of the evaporation source 11a was 1.00:1.00:1.00. The evaporation source 11c was arranged at a position 226 mm away from the center CT of the layout area of the plurality of evaporation sources 11a to 11f, the evaporation source 11b was arranged at a position 840 mm away, and the evaporation source 11a was arranged at a position 1200 mm away. Therefore, twice the distance L1 between the evaporation source 11c and the center CT of the layout area of the plurality of evaporation sources 11a to 11f was 452 mm, the distance L2 between the evaporation source 11c and the evaporation source 11b was 617 mm, and the distance L3 between the evaporation source 11b and the evaporation source 11c was 357 mm.

[0073] Comparing Example 1 ( Figure 6A ) with the comparative example ( Figure 6C ), it can be seen that by making the film formation rates of the evaporation sources 11a to 11c include two different film formation rates, the uniformity of the film thickness distribution of the film formed on the substrate 100 was improved from ±3.6% to ±1.6%. In addition, comparing Example 2 ( Figure 6B ) with the comparative example ( Figure 6C ), it can be seen that by making the film formation rates of the evaporation sources 11a to 11c include three different film formation rates, the uniformity of the film thickness distribution of the film formed on the substrate 100 was improved from ±3.6% to ±1.5%. Furthermore, comparing Example 1 and Example 2, the uniformity of the film thickness distribution of the film formed on the substrate 100 was at the same level. From the viewpoint of the consumption amount of the evaporation material, it can be seen that the consumption amount increases in the order of the comparative example, Example 1, and Example 2.

[0074] In addition, as described above, in the present embodiment, the distance between two adjacent evaporation sources in the crossing direction (Y direction) crossing the moving direction (X direction) of the evaporation source unit 10 is not constant, and there is a part where the interval between two adjacent evaporation sources becomes wider. In such a case, regarding the arrangement of the plurality of monitoring devices 12a to 12r, as Figure 4 shown, an arrangement with a higher crosstalk suppression effect can be adopted.

[0075] Specifically, for the monitoring devices 12a to 12f, they are arranged such that the lines connecting the corresponding evaporation sources among the plurality of evaporation sources 11a to 11f included in the evaporation source group 17A and the monitoring devices 12a to 12f are parallel to the moving direction (X direction) of the evaporation source unit 10. In addition, for the monitoring devices 12g to 12l, they are arranged such that the lines connecting the corresponding evaporation sources among the plurality of evaporation sources 11g to 11l included in the evaporation source group 17B and the monitoring devices 12g to 12l intersect the moving direction of the evaporation source unit 10. Further, the monitoring devices 12a to 12f and the monitoring devices 12g to 12l are arranged on one side in the moving direction (X direction) of the evaporation source unit 10, and are arranged on the evaporation source group 17A side in the present embodiment. Therefore, the state of the vapor deposition material released from the evaporation sources 11a to 11f included in the evaporation source group 17A near the area where the monitoring devices 12a to 12l are arranged is monitored by the monitoring devices 12a to 12f at the shortest distance. In addition, the state of the vapor deposition material released from the evaporation sources 11g to 11l included in the evaporation source group 17B is monitored by the monitoring devices 12g to 12l from an inclined direction. Thereby, crosstalk in the monitoring devices 12a to 12f and the monitoring devices 12g to 12l can be suppressed, and a decrease in the monitoring accuracy of the monitoring devices 12a to 12l can be suppressed.

[0076] On the other hand, for the monitoring devices 12m to 12r, they are arranged such that the lines connecting the corresponding evaporation sources among the plurality of evaporation sources 11m to 11r included in the evaporation source group 17C and the monitoring devices 12m to 12r are parallel to the moving direction of the evaporation source unit 10. In addition, the monitoring devices 12m to 12r are arranged on the other side in the moving direction of the evaporation source unit 10, and are arranged on the evaporation source group 17C side in the present embodiment. Therefore, the state of the vapor deposition material released from the evaporation sources 11m to 11r included in the evaporation source group 17C near the area where the monitoring devices 12m to 12r are arranged is monitored by the monitoring devices 12m to 12r at the shortest distance. Thereby, crosstalk in the monitoring devices 12m to 12r can be suppressed, and a decrease in the monitoring accuracy of the monitoring devices 12m to 12r can be suppressed.

[0077] The invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Therefore, claims are added to disclose the scope of the invention.

[0078] This application claims priority based on Japanese Patent Application No. 2022-193003 filed on December 1, 2022 as a Japanese patent application, and incorporates all of the content described therein.

Claims

1. An evaporation source unit that forms a film on a substrate that relatively moves in a moving direction, characterized in that The evaporation source unit has: a plurality of evaporation sources, each of the plurality of evaporation sources independently includes a container and a heating member, the container houses a vapor deposition material to be attached to the substrate, and the heating member heats the vapor deposition material housed in the container; and a control member that controls each of the plurality of evaporation sources, the plurality of evaporation sources include a first evaporation source, a second evaporation source, and a third evaporation source, and the first evaporation source, the second evaporation source, and the third evaporation source are sequentially arranged along a crossing direction that crosses the moving direction from the center of the layout area of the plurality of evaporation sources; the control member controls the first evaporation source, the second evaporation source, and the third evaporation source respectively so that the film formation rate of the second evaporation source is smaller than the film formation rate of the first evaporation source and the film formation rate of the third evaporation source.

2. The evaporation source unit according to claim 1, wherein the control member controls the first evaporation source and the third evaporation source respectively so that the film formation rate of the third evaporation source is larger than the film formation rate of the first evaporation source.

3. The evaporation source unit according to claim 2, wherein the control member controls the first evaporation source, the second evaporation source, and the third evaporation source respectively so that the ratio of the film formation rate of the first evaporation source, the film formation rate of the second evaporation source, and the film formation rate of the third evaporation source is 1.00:0.85:1.

41.

4. The evaporation source unit according to claim 1, wherein the control member controls the first evaporation source and the third evaporation source respectively so that the film formation rate of the third evaporation source is equal to the film formation rate of the first evaporation source.

5. The evaporation source unit according to claim 4, wherein the control member controls the first evaporation source, the second evaporation source, and the third evaporation source respectively so that the ratio of the film formation rate of the first evaporation source, the film formation rate of the second evaporation source, and the film formation rate of the third evaporation source is 1.00:0.58:1.

00.

6. The evaporation source unit according to claim 1, wherein the distance between the second evaporation source and the third evaporation source is shorter than the distance between the first evaporation source and the second evaporation source.

7. The evaporation source unit according to claim 6, wherein the distance that is twice the distance between the first evaporation source and the center of the layout area is longer than the distance between the first evaporation source and the second evaporation source.

8. The evaporation source unit according to claim 6, wherein the distance that is twice the distance between the first evaporation source and the center of the layout area is shorter than the distance between the first evaporation source and the second evaporation source and longer than the distance between the second evaporation source and the third evaporation source.

9. The evaporation source unit according to claim 1, wherein the farther away from the center of the layout area, the shorter the distance between two adjacent evaporation sources in the crossing direction among the plurality of evaporation sources becomes.

10. The evaporation source unit according to claim 1, wherein: the evaporation source unit further has a plurality of monitoring components, and the plurality of monitoring components respectively monitor the state of the evaporation material released from the corresponding evaporation source among the plurality of evaporation sources; the plurality of evaporation sources include a first evaporation source group and a second evaporation source group arranged in sequence from one side in the moving direction along the moving direction, the first evaporation source group includes a plurality of evaporation sources arranged in the crossing direction, and the second evaporation source group includes a plurality of evaporation sources arranged in the crossing direction; the first monitoring component among the plurality of monitoring components that monitors the state of the evaporation material released from each evaporation source included in the first evaporation source group is configured such that the line connecting the first monitoring component and the corresponding evaporation source among the plurality of evaporation sources included in the first evaporation source group is parallel to the moving direction; the second monitoring component among the plurality of monitoring components that monitors the state of the evaporation material released from each evaporation source included in the second evaporation source group is configured such that the line connecting the second monitoring component and the corresponding evaporation source among the plurality of evaporation sources included in the second evaporation source group crosses the moving direction; the first monitoring component and the second monitoring component are arranged on one side in the moving direction.

11. The evaporation source unit according to claim 10, wherein: the state of the evaporation material includes the rate of the evaporation material released from the evaporation source.

12. The evaporation source unit according to claim 11, wherein: the control component controls the film formation rate of each of the plurality of evaporation sources based on the rates of the evaporation material respectively monitored by the plurality of monitoring components.

13. A film forming apparatus, wherein: the film forming apparatus has the evaporation source unit according to claim 1.

14. A film forming method for forming a film on a substrate moving relatively in a moving direction, wherein: the film forming method has a step of controlling a plurality of evaporation sources respectively, the plurality of evaporation sources each independently include a container and a heating component, the container houses an evaporation material to be attached to the substrate, and the heating component heats the evaporation material housed in the container; the plurality of evaporation sources include a first evaporation source, a second evaporation source, and a third evaporation source, and the first evaporation source, the second evaporation source, and the third evaporation source are arranged in sequence from the center of the layout area of the plurality of evaporation sources along a crossing direction crossing the moving direction; in the step, the first evaporation source, the second evaporation source, and the third evaporation source are respectively controlled so that the film formation rate of the second evaporation source is smaller than the film formation rate of the first evaporation source and the film formation rate of the third evaporation source.

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