Plating apparatus and plating method

Abstract

The purpose of the present invention is to improve the uniformity of the thickness of a plating film on the entire surface to be plated by correcting the disorder in the thickness of the plating film on the peripheral edge of a substrate. The plating module (400) includes: a plating tank (410) configured to accommodate a plating solution; an anode (430) disposed in the plating tank (410); a substrate holder (440) configured so as to hold the substrate (Wf) in a state in which the surface (Wf-a) to be plated faces downward; a lifting mechanism (443) configured to lift the substrate holder (440); a rotation mechanism (447) configured to rotate the substrate holder (440); a shielding member (481) capable of shielding an electric field formed between the anode (430) and the substrate (Wf); and a shielding mechanism (485) configured so that the shielding member (481) is disposed so as to be switched between a reference position between the anode (430) and the substrate (Wf), a shielding position at which the electric field shielding area is larger than the reference position, and a retracted position at which the shielding member (481) is retracted from between the anode (430) and the substrate (Wf).

Description

Technical Field

[0001] This application relates to a plating apparatus and a plating method. Background Art

[0002] As an example of a plating apparatus, a cup-type electrolytic plating apparatus is known. The cup-type electrolytic plating apparatus immerses a substrate (e.g., a semiconductor wafer) held by a substrate holder with the plating surface facing downward in a plating solution, and applies a voltage between the substrate and an anode, thereby depositing a conductive film on the surface of the substrate.

[0003] In a cup-type electrolytic plating apparatus, it is known to use a shielding member to shield the electric field formed between the anode and the substrate. For example, in Patent Document 1, an electrolytic plating apparatus is disclosed in which, when a specific portion of the substrate rotates within a specified rotation angle range, the shielding member is moved between the specific portion of the substrate and the anode to shield only the specific portion of the substrate at a desired timing.

[0004] Patent Document 1: Japanese Patent No. 6901646

[0005] However, there is still room for improvement in the prior art electrolytic plating apparatus in terms of correcting the unevenness of the plating film thickness at the peripheral portion of the substrate to improve the uniformity of the plating film thickness over the entire plating surface.

[0006] That is, the plating film thickness at the peripheral portion of the plating surface of the substrate sometimes locally varies due to various factors such as uneven power supply of the contact members provided on the substrate holder, uneven seed layer thickness, and pattern shape. For example, at the peripheral portion of the substrate, the plating film thickness sometimes includes a standard portion, a portion thicker than the standard portion, and a portion thinner than the standard portion. In addition, the plating film thickness of the entire peripheral portion of the substrate sometimes becomes thicker or thinner than that of a standard substrate. Summary of the Invention

[0007] Therefore, an object of the present application is to correct the unevenness of the plating film thickness at the peripheral portion of the substrate to improve the uniformity of the plating film thickness over the entire plating surface.

[0008] According to one embodiment, a plating apparatus is disclosed, which includes: a plating bath configured to contain a plating solution; an anode disposed in the plating bath; a substrate holder configured to hold a substrate with the surface to be plated facing downward; a lifting mechanism configured to lift and lower the substrate holder; a rotating mechanism configured to rotate the substrate holder; a shielding member capable of shielding an electric field formed between the anode and the substrate; and a shielding mechanism configured to switch the shielding member between a reference position between the anode and the substrate, a shielding position where the electric field shielding area is larger than the reference position, and a retracted position where the shielding member retracts from between the anode and the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 FIG. 6 is a perspective view showing the overall structure of the plating apparatus of the present embodiment.

[0010] Figure 2 FIG. 10 is a top view showing the overall structure of the plating apparatus of the present embodiment.

[0011] Figure 3 FIG. 14 is a longitudinal sectional view schematically showing the structure of a plating module according to one embodiment, showing a state where the shielding member is moved to the reference position.

[0012] Figure 4 FIG. 18 is a longitudinal sectional view schematically showing the structure of a plating module according to one embodiment, showing a state where the shielding member is moved to the shielding position.

[0013] Figure 5 FIG. 22 is a longitudinal sectional view schematically showing the structure of a plating module according to one embodiment, showing a state where the shielding member is moved to the retracted position.

[0014] Figure 6 FIG. 26 is a top view schematically showing states where the shielding member is disposed at the retracted position, the reference position, and the shielding position.

[0015] Figure 7 FIG. 30 is a top view schematically showing an example of switching the arrangement position of the shielding member according to the distribution of the plating film thickness at the peripheral portion of the substrate.

[0016] Figure 8 FIG. 34 is a flowchart of a plating method using a plating module according to one embodiment.

[0017] Figure 9 FIG. 38 is a top view schematically showing an example of switching the arrangement position of the shielding member according to the type of the substrate.

[0018] Figure 10 FIG. 42 is a flowchart of a plating method using a plating module according to one embodiment.

[0019] Figure 11 It is a top view showing a plurality of regions included in the resistor body of one embodiment.

[0020] Figure 12 It is a diagram schematically showing an example of the plating film thickness when the arrangement position of the shielding member is adjusted according to the distribution of the plating film thickness at the peripheral portion of the substrate.

[0021] Figure 13 It is a top view showing a plurality of regions included in the resistor body of one embodiment.

[0022] Figure 14 It is a top view schematically showing an example of switching the arrangement position of the shielding member according to the distribution of the plating film thickness at the peripheral portion of the substrate.

[0023] Figure 15 It is a diagram showing the relationship between the timing of shielding the first part Wf - e of the substrate and the rotational speed of the substrate holder.

[0024] Figure 16 It is a top view schematically showing an example of switching the arrangement position of the shielding member according to the distribution of the plating film thickness at the peripheral portion of the substrate.

[0025] Figure 17 It is a top view schematically showing an example of switching the arrangement position of the shielding member according to the distribution of the plating film thickness at the peripheral portion of the substrate.

[0026] Figure 18 It is a top view schematically showing an example of switching the arrangement position of the shielding member according to the distribution of the plating film thickness at the peripheral portion of the substrate.

[0027] Figure 19 It is a top view schematically showing an example of switching the arrangement position of the shielding member according to the distribution of the plating film thickness at the peripheral portion of the substrate.

[0028] Figure 20 It is a top view schematically showing an example of switching the arrangement position of the shielding member according to the distribution of the plating film thickness at the peripheral portion of the substrate. Detailed Embodiments

[0029] Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings described below, the same or corresponding components are denoted by the same reference numerals and repeated description is omitted.

[0030] <Overall Structure of the Plating Apparatus>

[0031] Figure 1 It is a perspective view showing the overall structure of the plating apparatus of the present embodiment. Figure 2 It is a top view showing the overall structure of the plating apparatus of the present embodiment. AsFigure 1 , 2 As shown in 2 , the plating apparatus 1000 includes a loading port 100, a transfer robot 110, an aligner 120, a pre-wetting module 200, a pre-dipping module 300, a plating module 400, a cleaning module 500, a spin dryer 600, a transfer device 700, and a control module 800.

[0032] The loading port 100 is a module for loading a substrate stored in a cassette such as a FOUP (not shown) into the plating apparatus 1000 or unloading the substrate from the plating apparatus 1000 to the cassette. In the present embodiment, four loading ports 100 are arranged horizontally, but the number and arrangement of the loading ports 100 are arbitrary. The transfer robot 110 is a robot for transferring substrates, and is configured to transfer substrates between the loading port 100, the aligner 120, the pre-wetting module 200, and the spin dryer 600. When transferring substrates between the transfer robot 110 and the transfer device 700, the transfer robot 110 and the transfer device 700 can transfer substrates via a temporary storage table (not shown).

[0033] The aligner 120 is a module for aligning the position of the orientation plane or notch of the substrate with a specified direction. In the present embodiment, two aligners 120 are arranged horizontally, but the number and arrangement of the aligners 120 are arbitrary. The pre-wetting module 200 wets the surface to be plated of the substrate before plating with a treatment liquid such as pure water or degassed water, thereby replacing the air inside the pattern formed on the substrate surface with the treatment liquid. The pre-wetting module 200 is configured to perform a pre-wetting treatment, which is a treatment for easily supplying the plating liquid into the pattern by replacing the treatment liquid inside the pattern with the plating liquid during plating. In the present embodiment, two pre-wetting modules 200 are arranged vertically, but the number and arrangement of the pre-wetting modules 200 are arbitrary.

[0034] The pre-dipping module 300 is configured to perform a pre-dipping treatment, which is a treatment for etching and removing an oxide film with a relatively high resistance existing on the surface of the seed layer formed on the surface to be plated of the substrate before plating treatment, such as with a treatment liquid such as sulfuric acid or hydrochloric acid, and cleaning or activating the plating base surface. In the present embodiment, two pre-dipping modules 300 are arranged vertically, but the number and arrangement of the pre-dipping modules 300 are arbitrary. The plating module 400 performs a plating treatment on the substrate. In the present embodiment, there are two groups of plating modules 400, with three arranged vertically and four arranged horizontally, for a total of 12 plating modules 400, and a total of 24 plating modules 400 are provided, but the number and arrangement of the plating modules 400 are arbitrary.

[0035] The cleaning module 500 is configured to perform a cleaning process on the substrate in order to remove plating solution and the like remaining on the substrate after the plating process. In the present embodiment, two cleaning modules 500 are arranged in the vertical direction, but the number and arrangement of the cleaning modules 500 are arbitrary. The spin dryer 600 is a module for drying the substrate by rotating it at high speed after the cleaning process. In the present embodiment, two spin dryers are arranged in the vertical direction, but the number and arrangement of the spin dryers are arbitrary. The transfer device 700 is a device for transferring the substrate between multiple modules in the plating apparatus 1000. The control module 800 is configured to control multiple modules of the plating apparatus 1000 and can be constituted by, for example, a general computer or a dedicated computer having an input / output interface with the operator.

[0036] An example of a series of plating processes performed on the plating apparatus 1000 will be described. First, a substrate stored in a cassette is loaded into the loading port 100. Next, the transfer robot 110 takes out the substrate from the cassette in the loading port 100 and transfers the substrate to the aligner 120. The aligner 120 aligns the position of the orientation plane or notch of the substrate with a specified direction. The transfer robot 110 transfers the substrate whose direction has been aligned by the aligner 120 to the pre-wetting module 200.

[0037] The pre-wetting module 200 performs a pre-wetting process on the substrate. The transfer device 700 transfers the substrate on which the pre-wetting process has been performed to the pre-dipping module 300. The pre-dipping module 300 performs a pre-dipping process on the substrate. The transfer device 700 transfers the substrate on which the pre-dipping process has been performed to the plating module 400. The plating module 400 performs a plating process on the substrate.

[0038] The transfer device 700 transfers the substrate on which the plating process has been performed to the cleaning module 500. The cleaning module 500 performs a cleaning process on the substrate. The transfer device 700 transfers the substrate on which the cleaning process has been performed to the spin dryer 600. The spin dryer 600 performs a drying process on the substrate. The transfer robot 110 receives the substrate from the spin dryer 600 and transfers the substrate on which the drying process has been performed to the cassette in the loading port 100. Finally, the cassette containing the substrate is unloaded from the loading port 100.

[0039] <Structure of the plating module>

[0040] Next, the structure of the plating module 400 will be described. Since the 24 plating modules 400 in the present embodiment have the same structure, only one plating module 400 will be described. Figure 3 It is a longitudinal sectional view schematically showing the structure of a plating module according to an embodiment, showing the state where the shielding member has moved to the reference position. Figure 4 It is a longitudinal sectional view schematically showing the structure of a plating module according to an embodiment, showing the state where the shielding member has moved to the shielding position.Figure 5 is a longitudinal sectional view schematically showing the structure of a plating module according to an embodiment, showing a state where a shielding member has moved to a retracted position.

[0041] As Figures 3 to 5 shown, the plating module 400 includes a plating tank 410 for containing a plating solution. The plating module 400 includes a diaphragm 420 that divides the interior of the plating tank 410 in the vertical direction. The interior of the plating tank 410 is divided by the diaphragm 420 into a cathode region 422 and an anode region 424.

[0042] The plating solution is filled into the cathode region 422 and the anode region 424, respectively. The plating module 400 includes a nozzle 426 that opens toward the cathode region 422, and a supply source 428 for supplying the plating solution to the cathode region 422 via the nozzle 426. The same applies to the anode region 424. The plating module 400 includes a mechanism for supplying the plating solution to the anode region 424, but illustration thereof is omitted. An anode 430 is provided on the bottom surface of the plating tank 410 in the anode region 424. A resistor body 450 is disposed in the cathode region 422 so as to face the diaphragm 420, and the resistor body 450 is directly or indirectly mounted on the plating tank 410. The resistor body 450 is a component for achieving uniform plating treatment on the plated surface Wf-a of the substrate Wf, and is composed of a plate-like member formed with a plurality of holes.

[0043] In addition, the plating module 400 includes a substrate holder 440 for holding the substrate Wf in a state where the plated surface Wf-a faces downward. The substrate holder 440 includes a power supply contact (power supply contact member) for supplying power to the substrate Wf from a power supply (not shown). The substrate holder 440 includes a seal ring holder 442 for supporting the outer edge portion of the plated surface Wf-a of the substrate Wf, and a frame 446 for holding the seal ring holder 442 on a substrate holder main body (not shown). In addition, the substrate holder 440 includes a back plate 444 for pressing the back surface of the plated surface Wf-a of the substrate Wf, and a shaft 448 mounted on the back surface of the substrate pressing surface of the back plate 444.

[0044] The plating module 400 includes a lifting mechanism 443 for lifting and lowering the substrate holder 440, and a rotating mechanism 447 for rotating the substrate holder 440 so that the substrate Wf rotates about an imaginary axis (an imaginary rotation axis extending vertically at the center of the plated surface Wf-a) of the shaft 448. The lifting mechanism 443 and the rotating mechanism 447 can be realized by a known mechanism such as a motor, for example. The plating module 400 is configured to immerse the substrate Wf in the plating solution in the cathode region 422 by using the lifting mechanism 443, and apply a voltage between the anode 430 and the substrate Wf to perform a plating treatment on the plated surface Wf-a of the substrate Wf.

[0045] The plating module 400 includes a film thickness sensor 490 configured to measure the film thickness of the plating film on the peripheral portion of the substrate Wf. In the present embodiment, the film thickness sensor 490 is mounted on the resistor body 450 so as to face the peripheral portion of the substrate Wf. The film thickness sensor 490 is configured to measure the film thickness of the plating film on the peripheral portion of the facing substrate Wf by any method such as optical, electric field, magnetic field, potential, etc. during the plating process. During the plating process, the substrate rotates, so the film thickness sensor 490 can measure the circumferential distribution of the plating film thickness along the circumferential direction of the peripheral portion of the substrate.

[0046] The plating module 400 includes a shielding member 481 for shielding the electric field formed between the anode 430 and the substrate Wf when disposed between the anode 430 and the substrate Wf. The shielding member 481 can be, for example, a shielding plate formed in a plate shape. In addition, the plating module 400 includes a shielding mechanism 485 for moving the shielding member 481. The shielding mechanism 485 is configured to be able to switch the position where the shielding member 481 is disposed. Hereinafter, a specific example of the shielding mechanism 485 will be described.

[0047] Figure 6 It is a top view schematically showing the states of the shielding member disposed at the retracted position, the reference position, and the shielding position. Figure 6 In (A) of Figure 6 it shows the state where the shielding member 481 is disposed at the reference position, Figure 6 in (B) of

[0048] as Figures 3 to 5 and Figure 6 shown, the shielding mechanism 485 is configured to switch the shielding member 481 among the reference position between the anode 430 and the substrate Wf, the shielding position where the electric field shielding area is larger than the reference position, and the retracted position where it retracts from between the anode 430 and the substrate Wf. As Figure 6 shown in (A) to (C) of

[0049] For example, the shielding mechanism 485 may also be configured to switch the shielding member 481 between a reference position, a shielding position, and a retracted position according to the distribution of the thickness of the plating film on the peripheral portion of the substrate Wf measured by the film thickness sensor 490. In addition, in the present embodiment, an example in which the shielding mechanism 485 switches the shielding member 481 between three positions is shown, but it is not limited thereto, and the shielding mechanism 485 can also switch the shielding member 481 between four or more positions. In addition, in this specification, the shielding mechanism 485 disposing the shielding member 481 at a specified position does not simply mean that the shielding member 481 passes through the specified position during the movement thereof, but means that the shielding member 481 stops at the specified position.

[0050] Figure 7 It is a top view schematically showing an example of switching the arrangement position of the shielding member according to the distribution of the thickness of the plating film on the peripheral portion of the substrate. Figure 7 (A) to (D) in show the state of switching the arrangement position of the shielding member accompanying the rotation of the substrate Wf. As Figure 7 (A) to (D) in show, when the substrate Wf rotates, the peripheral portion of the substrate Wf approaches the shielding member 481 in sequence. In the Figure 7 example, a first plating film thickness (reference film thickness), a second plating film thickness thicker than the first plating film thickness, and a third plating film thickness thinner than the first plating film thickness are formed on the peripheral portion of the substrate Wf, resulting in a disorder in the plating film thickness on the peripheral portion of the substrate Wf. The disorder in the plating film thickness may be caused by various factors such as uneven power supply of the contact member provided on the substrate holder 440, uneven thickness of the seed layer in the plating surface of the substrate Wf, and the pattern shape in the plating surface of the substrate Wf.

[0051] As Figure 7 (A) in shows that the shielding mechanism 485 is configured to dispose the shielding member 481 at the reference position for the first peripheral portion Wf-b of the substrate Wf having the first plating film thickness. Specifically, when the first peripheral portion Wf-b of the substrate Wf approaches the shielding member 481, the shielding mechanism 485 disposes the shielding member 481 at the reference position. In addition, as Figure 7 (B) in shows that the shielding mechanism 485 is configured to dispose the shielding member 481 at the shielding position for the second peripheral portion Wf-c of the substrate Wf having the second plating film thickness. Specifically, when the substrate Wf rotates and the second peripheral portion Wf-c of the substrate Wf approaches the shielding member 481, the shielding mechanism 485 disposes the shielding member 481 at the shielding position. In addition, as Figure 7 (C) in shows that when the substrate Wf further rotates and the first peripheral portion Wf-b approaches the shielding member 481 again, the shielding mechanism 485 disposes the shielding member 481 at the reference position. In addition, as Figure 7As shown in (D) therein, the shielding mechanism 485 is configured to dispose the shielding member 481 at the retracted position with respect to the third peripheral portion Wf-d of the substrate Wf on which the third plating film thickness is formed. Specifically, if the substrate Wf further rotates and the third peripheral portion Wf-d of the substrate Wf approaches the shielding member 481, the shielding mechanism 485 disposes the shielding member 481 at the retracted position. In addition, the following examples are shown, that is, in Figure 7 (A) and (C) therein, the substrate Wf held by the substrate holder 440 is rotated unidirectionally at a constant speed, and in Figure 7 (B) and (D) therein, the substrate Wf held by the substrate holder 440 is rotated unidirectionally at a constant speed, but it is not limited thereto.

[0052] According to the present embodiment, by disposing the shielding member 481 at the shielding position with respect to the second peripheral portion Wf-c, it is possible to suppress the formation of the plating film thickness on the second peripheral portion Wf-c, and thus it is possible to make the plating film thickness of the second peripheral portion Wf-c close to the reference film thickness. On the other hand, by disposing the shielding member 481 at the retracted position with respect to the third peripheral portion Wf-d, it is possible to promote the formation of the plating film thickness on the third peripheral portion Wf-d, and thus it is possible to make the plating film thickness of the third peripheral portion Wf-d close to the reference film thickness. As a result, according to the present embodiment, it is possible to correct the disorder of the plating film thickness of the peripheral portion of the substrate and improve the uniformity of the plating film thickness of the entire plated surface.

[0053] In addition, in the present embodiment, an example in which the arrangement position of the shielding member 481 is determined according to the distribution of the plating film thickness of the peripheral portion of the substrate Wf measured by the film thickness sensor 490 is shown, but it is not limited thereto. That is, the plating module 400 may not include the film thickness sensor 490. In this case, the shielding mechanism 485 can predict the formation of the same plating film thickness distribution on the substrate Wf of the same type based on the distribution of the plating film thickness of the substrate Wf obtained in advance through experiments or the like. Therefore, the shielding mechanism 485 may also be configured to switch the shielding member 481 between the reference position, the shielding position, and the retracted position according to the distribution of the plating film thickness formed on the peripheral portion of the substrate Wf.

[0054] Next, a plating method using the plating module 400 of the present embodiment will be described. Figure 8 It is a flowchart of a plating method using a plating module of one embodiment.

[0055] In the plating method, a substrate Wf is set on the substrate holder 440 (step 102). Step 102 can be performed, for example, by placing the substrate Wf in a state where the plated surface Wf-a faces downward on the seal ring holder 442 by a robot (not shown) and pressing the back surface of the substrate Wf by the back plate 444.

[0056] Next, the plating method lowers the substrate holder 440 into the plating bath 410 by means of the lifting mechanism 443 (lowering step 104). Next, the plating method rotates the substrate holder 440 by means of the rotating mechanism 447 (rotating step 106).

[0057] Next, the plating method applies a voltage between the anode 430 disposed in the plating bath 410 and the substrate Wf held by the substrate holder 440 to perform a plating process on the plating surface Wf-a (plating step 108). In addition, the order of steps 106 and 108 can be switched, or they can be executed simultaneously.

[0058] Next, the plating method uses the film thickness sensor 490 to measure the film thickness of the plating film on the peripheral portion of the substrate Wf (measuring step 110). Next, the plating method configures the shielding member 481 to switch between a reference position, a shielding position, and a retracted position according to the distribution of the film thickness of the plating film on the peripheral portion of the substrate Wf measured in the measuring step 110 (shielding step 112).

[0059] Specifically, the shielding step 112 includes a step 112-a of determining the type of the peripheral portion of the substrate Wf close to the shielding member 481. The shielding step 112 includes a first configuration step 112-b of disposing the shielding member 481 at the reference position for the first peripheral portion Wf-b of the substrate Wf when it is determined that the first peripheral portion Wf-b of the substrate Wf is close to the shielding member 481. The shielding step 112 includes a second configuration step 112-c of disposing the shielding member 481 at the shielding position for the second peripheral portion Wf-c of the substrate Wf when it is determined that the second peripheral portion Wf-c of the substrate Wf is close to the shielding member 481. The shielding step 112 includes a third configuration step 112-d of disposing the shielding member 481 at the retracted position for the third peripheral portion Wf-d of the substrate Wf when it is determined that the third peripheral portion Wf-d of the substrate Wf is close to the shielding member 481. Thereby, it is possible to correct the disorder of the film thickness of the plating film on the peripheral portion of the substrate and improve the uniformity of the film thickness of the plating film on the entire plating surface.

[0060] Next, the plating method determines whether the plating process should be ended (step 114). For example, when the specified time has not elapsed after the start of the plating process and it is determined that the plating process should not be ended (step 114: No), the plating method returns to step 110 to continue the process.

[0061] On the other hand, when the plating method determines that the plating process should be terminated after a predetermined time has passed after the plating process is started (step 114: Yes), the plating method stops the plating process by stopping the voltage application between the anode 430 and the substrate Wf (step 116). Next, the plating method stops the rotation of the substrate holder 440 by the rotating mechanism 447 (step 118). Next, the plating method raises the substrate holder 440 by the lifting mechanism 443 (step 120). Thus, a series of plating processes are terminated.

[0062] Next, the plating module 400 of other embodiments is described. In the above embodiment, the shielding mechanism 485 is configured to switch the shielding member 481 between the reference position, the shielding position, and the retreat position according to the distribution of the plating film thickness of the peripheral portion of the substrate Wf, but is not limited to this. The shielding mechanism 485 can also be configured to switch the shielding member 481 between the reference position, the shielding position, and the retreat position according to the type of substrate Wf held by the substrate holder 440. This point will be described below.

[0063] Figure 9 It is a plan view schematically showing an example in which the arrangement position of the shielding member is switched according to the type of substrate. Figure 9 (A) in FIG. 1 shows the distribution of the thickness of the plated films when the shielding member 481 is arranged at the reference position and the plating process is performed on three different types of substrates. Figure 9 (B) in FIG. 1 shows a state where the shielding member 481 is arranged at the reference position, the shielding position, and the retracted position for three types of substrates. Figure 9 The (C) in the formula indicates that Figure 9 The shielding member 481 is arranged as shown in (B) and the thickness distribution of the plated film formed on the substrate is obtained.

[0064] like Figure 9 As shown in (A) in FIG. 1 , due to various factors such as uneven seed layer thickness on the plated surface of the substrate Wf and pattern shape on the plated surface of the substrate Wf, the thickness of the plated film at the peripheral portion of the substrate may be disordered. Figure 9 As shown in the upper layer of (A) in FIG. 1 , the plating process is performed with the shielding member 481 arranged in the reference position, and as a result, the entire substrate obtains a uniform distribution of the plating film thickness. In this case, the shielding mechanism 485 is used for the same type of substrate, such as Figure 9 As shown in the upper layer of (B) in FIG. 1 , the shielding member 481 is arranged at the reference position. As a result, Figure 9 As shown in the upper layer of (C), the entire plated surface achieves a uniform plating film thickness.

[0065] On the other hand, for example, Figure 9As shown in the middle layer of (A) therein, plating treatment is performed in a state where the shielding member 481 is disposed at the reference position. As a result, the plating film thickness at the peripheral portion of the substrate is thicker than that at the central portion. In this case, for the same type of substrate, the shielding mechanism 485 disposes the shielding member 481 at the shielding position as shown in the middle layer of (B) therein. As a result, the formation of the plating film thickness at the peripheral portion of the substrate Wf can be suppressed. Therefore, as shown in the middle layer of (C) therein, the uniformity of the plating film thickness of the entire surface to be plated can be improved. Figure 9 As shown in the middle layer of (B) therein, the shielding member 481 is disposed at the shielding position. As a result, the formation of the plating film thickness at the peripheral portion of the substrate Wf can be suppressed. Therefore, as shown in the middle layer of (C) therein, the uniformity of the plating film thickness of the entire surface to be plated can be improved. Figure 9 As shown in the middle layer of (C) therein, the uniformity of the plating film thickness of the entire surface to be plated can be improved.

[0066] In addition, for example, as shown in the lower layer of (A) therein, plating treatment is performed in a state where the shielding member 481 is disposed at the reference position. As a result, the plating film thickness at the peripheral portion of the substrate is thinner than that at the central portion. In this case, for the same type of substrate, the shielding mechanism 485 disposes the shielding member 481 at the retracted position as shown in the lower layer of (B) therein. As a result, the formation of the plating film thickness at the peripheral portion of the substrate Wf can be promoted. Therefore, as shown in the lower layer of (C) therein, the uniformity of the plating film thickness of the entire surface to be plated can be improved. Based on the above, according to the present embodiment, it is possible to correct the disorder of the plating film thickness at the peripheral portion of the substrate to improve the uniformity of the plating film thickness of the entire surface to be plated. Figure 9 As shown in the lower layer of (A) therein, plating treatment is performed in a state where the shielding member 481 is disposed at the reference position. As a result, the plating film thickness at the peripheral portion of the substrate is thinner than that at the central portion. In this case, for the same type of substrate, the shielding mechanism 485 disposes the shielding member 481 at the retracted position as shown in the lower layer of (B) therein. As a result, the formation of the plating film thickness at the peripheral portion of the substrate Wf can be promoted. Therefore, as shown in the lower layer of (C) therein, the uniformity of the plating film thickness of the entire surface to be plated can be improved. Based on the above, according to the present embodiment, it is possible to correct the disorder of the plating film thickness at the peripheral portion of the substrate to improve the uniformity of the plating film thickness of the entire surface to be plated. Figure 9 As shown in the lower layer of (B) therein, the shielding member 481 is disposed at the retracted position. As a result, the formation of the plating film thickness at the peripheral portion of the substrate Wf can be promoted. Therefore, as shown in the lower layer of (C) therein, the uniformity of the plating film thickness of the entire surface to be plated can be improved. Figure 9 As shown in the lower layer of (C) therein, the uniformity of the plating film thickness of the entire surface to be plated can be improved. Based on the above, according to the present embodiment, it is possible to correct the disorder of the plating film thickness at the peripheral portion of the substrate to improve the uniformity of the plating film thickness of the entire surface to be plated.

[0067] Next, a plating method using the plating module 400 of the present embodiment will be described. Figure 10 It is a flowchart of a plating method using a plating module of one embodiment.

[0068] The plating method determines the type of the substrate held by the substrate holder 440 (determination step 201). The determination step 201 can determine the type of the substrate, for example, based on the distribution of the plating film thickness of the same type of substrate Wf obtained in advance through experiments or the like. Next, the plating method sets the substrate Wf on the substrate holder 440 (step 202). Step 202 can be performed, for example, by placing the substrate Wf in a state where the surface to be plated Wf-a faces downward on the seal ring holder 442 using a robot (not shown) and pressing the back surface of the substrate Wf with the back plate 444.

[0069] Next, the plating method lowers the substrate holder 440 into the plating bath 410 by the lifting mechanism 443 (lowering step 204). Next, the plating method rotates the substrate holder 440 by the rotation mechanism 447 (rotation step 206).

[0070] Next, the plating method applies a voltage between the anode 430 disposed in the plating bath 410 and the substrate Wf held by the substrate holder 440 to perform plating treatment on the surface to be plated Wf-a (plating step 208).

[0071] Next, the plating method switches the shielding member 481 between the reference position, the shielding position, and the retracted position according to the type of substrate determined in the determination step 201 (shielding step 210). Specifically, as described in (A) and (B) of [], the shielding member 481 is configured to switch to the reference position, the shielding position, or the retracted position according to whether the plating film thickness formed on the peripheral portion of the substrate is the same thickness, thicker, or thinner than that of the central portion. Thus, as shown in (C) of [], it is possible to correct the disorder of the plating film thickness of the peripheral portion of the substrate to improve the uniformity of the plating film thickness of the entire plated surface. In addition, the order of steps 206, 208, and 210 can be changed, or they can be executed simultaneously. Figure 9 [] Figure 9 []

[0072] Next, the plating method determines whether the plating process should be terminated (step 212). For example, when the prescribed time has not elapsed after the start of the plating process and it is determined that the plating process should not be terminated (step 212: No), the plating method returns to step 212 to continue the process.

[0073] On the other hand, for example, when the prescribed time has elapsed after the start of the plating process and it is determined that the plating process should be terminated (step 212: Yes), the plating method stops the plating process by stopping the voltage application between the anode 430 and the substrate Wf (step 214). Next, the plating method stops the rotation of the substrate holder 440 by the rotation mechanism 447 (step 216). Next, the plating method raises the substrate holder 440 by the lifting mechanism 443 (step 218). Thus, a series of plating processes are completed.

[0074] Next, another mode of the plating apparatus 1000 of the present embodiment will be described. In the above embodiment, an example is shown in which a plurality of holes are formed at equal intervals along the circumferential direction of the circular plate member in the resistor body 450 included in the plating apparatus 1000, but it is not limited thereto. Hereinafter, this point will be described.

[0075] Figure 11 is a plan view showing a plurality of regions included in a resistor body of one embodiment. The resistor body 450 is constituted by forming a plurality of holes 452 in the circular plate member 451. In addition, in Figure 11In the figure, only a part of the plurality of holes 452 formed in the disc member 451 is shown, but actually the holes 452 are formed integrally within the dashed line 455. The dashed line 455 indicates the surface of the substrate to be plated, and the region through which metal ions of the resistor pass (ion permeation region) is set to be substantially the same as or slightly smaller than the surface of the substrate to be plated. The so-called shielding region of the resistor refers to the region other than the opening 454 (S5 region) described later. With this setting, the resistor 450 can properly function on the surface of the substrate Wf to be plated, and finely adjust the flow of the plating solution and the plating distribution of the metal on the substrate. A plurality of holes 452 are formed in the disc member 451, but there is a portion where the holes 452 are formed unevenly in the circumferential direction of the disc member 451. More specifically, as Figure 11 shown, when the shielding member 481 is disposed at the shielding position, the resistor 450 has a dynamic shielding region DA where the resistor 450 overlaps with the shielding member 481. In the dynamic shielding region DA of the resistor 450, there is a first region S1 having a first shielding ratio. The so-called first shielding ratio refers to the ratio at which the resistor 450 shields the permeation of metal ions in the region S1, and the first shielding ratio = 1 - total area of holes in region S1 / area of region S1. The same applies to the shielding ratios of other regions described later. In addition, each total area is calculated by taking the holes in the adjacent other regions as boundaries. The first region S1 has an area less than 0.35% of the total area of the resistor 450 facing the substrate held by the substrate holder 440.

[0076] In addition, the resistor 450 includes a second region S2 in the dynamic shielding region DA. The second region S2 is disposed on the inner side away from the first region S1 and has a second shielding ratio larger than the first shielding ratio. In addition, the resistor 450 includes a third region S3 in the dynamic shielding region DA. The third region S3 is disposed between the first region S1 and the second region S2 and has a third shielding ratio larger than the first shielding ratio and smaller than the second shielding ratio. By disposing the first region S1, the second region S2, and the third region S3 within the dynamic shielding region DA, the shielding ratio dynamically changes within the dynamic shielding region DA. The third region S3 extends along the circumferential direction beyond the dynamic shielding region DA, and in the extended region, the third shielding ratio is uniformly present. In the present embodiment, the third region S3 extends over the entire circumference at a specified radius position (43rd column) of the resistor 450 and uniformly has the third shielding ratio over the entire circumference. In addition, since the first region S1 is a region having a local shielding ratio with respect to the entire circumferential direction at the peripheral edge of the shielding region of the resistor 450, in this specification, the first region S1 is referred to as a "local shielding region".

[0077] In addition, the resistor body 450 further includes a fourth region S4, which is disposed closer to the inside than the second region S2 and in other parts of the circumferential direction of the second region S2, and has a fourth shielding ratio smaller than the second shielding ratio. In addition, the resistor body 450 further includes a fifth region S5, which is disposed in other parts of the circumferential direction of the first region S1 (specifically, a part that is 90 degrees deviated from the first region S1), and has an opening 454 larger than the hole 452. The shielding ratio of the fifth region S5 is 0, and the shielding region of the resistor body refers to specific regions (the first region, the second region, the third region, the fourth region, the sixth region), which are characterized by different shielding ratios when the substrate is in different azimuth positions. In addition, the resistor body 450 further includes a sixth region S6, which is disposed in other parts of the circumferential direction of the first region S1 and the fifth region S5, and has a sixth shielding ratio larger than the first shielding ratio.

[0078] In Figure 11 In one mode of the example shown, the fourth region S4 is disposed in the entire circumference from the center (the 0th column) of the disc member to the 40th column, and a part of the 41st column and the 42nd column, and the fourth shielding ratio becomes 72%. In addition, the second region S2 is disposed in a part of the 41st column and the 42nd column, and the second shielding ratio becomes 84%. In addition, the third region S3 is disposed in the 43rd column, and the third shielding ratio becomes 66%. In addition, the first region S1 is disposed in a part of the 44th column and the 45th column, and the first shielding ratio becomes 48%. In addition, the sixth region S6 is disposed in a part of the 44th column, and the sixth shielding ratio becomes 86%.

[0079] In Figure 11 In other modes of the example shown, the fourth region S4 is disposed in the entire circumference from the center (the 0th column) of the disc member to the 40th column and a part of the 41st column, and the fourth shielding ratio becomes 72%. In addition, the second region S2 is disposed in a part of the 41st column, and the second shielding ratio becomes 86%. In addition, the third region S3 is disposed in the 42nd column and the 43rd column, and the third shielding ratio is 72% in the 42nd column and 66% in the 43rd column. In addition, the first region S1 is disposed in a part of the 44th column and the 45th column, and the first shielding ratio becomes 48%. The sixth region S6 is disposed in a part of the 44th column, and the sixth shielding ratio becomes 86%.

[0080] Figure 12 is a diagram schematically showing an example of the plating film thickness when the arrangement position of the shielding member is adjusted according to the distribution of the plating film thickness at the peripheral portion of the substrate. As Figure 12 shown in the upper layer, for the part where the plating film thickness at the peripheral portion of the substrate is relatively thick, the shielding mechanism 485 disposes the shielding member 481 at the shielding position. Thereby, it is possible to suppress the formation of the plating film thickness in this part, so that the plating film thickness in this part can be made close to the reference film thickness (normal film thickness).

[0081] In addition, as shown in the middle layer of Figure 12 , for the portion where the plating film thickness at the peripheral portion of the substrate is normal, the shielding mechanism 485 disposes the shielding member 481 at the reference position. Thus, the plating film thickness of this portion can be maintained at the normal film thickness. In addition, as shown in the lower layer of Figure 12 , for the portion where the plating film thickness at the peripheral portion of the substrate is thin, the shielding mechanism 485 disposes the shielding member 481 at the retracted position. Thus, the formation of the plating film thickness of this portion can be promoted, so that the plating film thickness of this portion can be made close to the reference film thickness (normal film thickness).

[0082] According to the present embodiment, the third region S3 of the resistor body 450 extends circumferentially beyond the dynamic shielding region DA, and in the extended region, the third shielding ratio is uniformly present. Therefore, the resistor body 450 of the present embodiment has advantages compared with the resistor bodies of the prior art. That is, for the portion where the plating film thickness is normal, the shielding member 481 is disposed at the reference position where it is exposed in the 42nd column of the resistor body 450 for plating treatment. In the resistor body of the prior art, since the shielding ratio of the 41st column to the 43rd column is higher than the other circumferential shielding ratios, the plating film thickness tends to become thinner. On the other hand, in the resistor body 450 of the present embodiment, since the 43rd column (or the 42nd column and the 43rd column) has the same shielding ratio as the other circumferential shielding ratios and the holes are uniformly arranged, the influence on the current density distribution of the 41st column and the 42nd column (or the 41st column) with different other circumferential shielding ratios is mitigated, and for the portion with a normal film thickness, the film thickness uniformity or coplanarity is not easily affected. As a result, according to the present embodiment, in the state where the shielding member 481 is disposed at the reference position, the plating film thickness at the peripheral portion of the substrate can be maintained at the normal film thickness.

[0083] In Figure 11 , in one mode of the example shown, the fourth region S4 is disposed from the center (0th column) of the circular plate member to the 42nd column, and the fourth shielding ratio becomes 72%. In addition, the third region S3 is disposed in the 43rd column, and the third shielding ratio becomes 66%. In addition, the fifth region S5 is disposed in the 44th column and a part of the 45th column. Since the fifth region S5 is formed with an opening 454 larger than the hole, the shielding ratio becomes 0%. The sixth region S6 is disposed in a part of the 44th column, and the sixth shielding ratio becomes 86%.

[0084] In addition, in the above embodiment, an example is shown in which the third region S3 extends over the entire circumference of the circular plate member 451 as shown in Figure 11 , but it is not limited thereto. Figure 13 It is a top view showing a plurality of regions included in the resistor body of one embodiment.

[0085] Similar to the above-described embodiment, the resistor body 450 includes in the dynamic shielding region DA: a first region S1 having a first shielding rate; and a second region S2 disposed inside and away from the first region S1 and having a second shielding rate greater than the first shielding rate. Further, the resistor body 450 includes a third region S3 in the dynamic shielding region DA. The third region S3 is disposed between the first region S1 and the second region S2 and has a third shielding rate greater than the first shielding rate and smaller than the second shielding rate. The third region S3 extends circumferentially beyond the dynamic shielding region DA and has the third shielding rate uniformly in the extended region.

[0086] In Figure 13 the example shown, the third region S3 does not extend over the entire circumference of the disc member 451. That is, in the present embodiment, the fifth region S5 is disposed not only in the other part in the circumferential direction of the first region S1 but also in the other part in the circumferential direction of the third region S3. In other words, the fifth region S5 extends not only to the 44th column and the 45th column of the resistor body 450 but also to the 43rd column. Accordingly, a part of the 43rd column of the resistor body 450 has the fifth region S5, but in most of the 43rd column, the third region S3 extends in the circumferential direction of the resistor body 450.

[0087] Further, the resistor body 450 includes: a fourth region S4 disposed inside the second region S2 and in the other part in the circumferential direction of the second region S2 and having a fourth shielding rate smaller than the second shielding rate and the same as the third shielding rate; and a sixth region S6 disposed in the other part in the circumferential direction of the first region S1 and the fifth region S5 and having a sixth shielding rate greater than the first shielding rate. In Figure 13 the example shown, the fourth region S4 is disposed over the entire circumference from the center (the 0th column) of the disc member to the 40th column and a part of the 41st column and the 42nd column, and the fourth shielding rate becomes 72%. Further, the second region S2 is disposed in a part of the 41st column and the 42nd column, and the second shielding rate becomes 84%. Further, the third region S3 is disposed in the 43rd column, and the third shielding rate becomes 72%, which is different from the above-described embodiment in that it is the same as the fourth shielding rate. Further, the first region S1 is disposed in a part of the 44th column and the 45th column, and the first shielding rate becomes 48%. Further, the sixth region S6 is disposed in a part of the 44th column, and the sixth shielding rate becomes 86%.

[0088] According to the present embodiment, the third region S3 having a uniform shielding rate extends along the circumferential direction of the 43rd column of the resistor body 450 for most of the length. Therefore, the resistor body 450 of the present embodiment has advantages compared with the resistor bodies of the prior art. That is, for the portions where the plating film thickness is normal, the shielding member 481 is disposed at a reference position where the 42nd column of the resistor body 450 is exposed for plating treatment. In the resistor body of the prior art, since the shielding rate of the 41st to 43rd columns is higher than the shielding rate in other circumferential directions, the plating film thickness tends to become thinner. On the other hand, for most of the 43rd column of the resistor body 450 of the present embodiment, since it is the same as the shielding rate in other circumferential directions and is arranged uniformly, the influence on the current density distribution of the 41st and 42nd columns with different shielding rates in other circumferential directions is alleviated, and for the portions where the film thickness is normal, the film thickness uniformity or coplanarity is not easily affected. As a result, according to the present embodiment, in a state where the shielding member 481 is disposed at the reference position, the plating film thickness at the peripheral portion of the substrate can be maintained at a normal film thickness.

[0089] Next, another mode of the plating apparatus 1000 of the present embodiment will be described. Figure 14 It is a top view schematically showing an example of switching the arrangement position of the shielding member according to the distribution of the plating film thickness at the peripheral portion of the substrate.

[0090] In the above embodiment, an example in which the shielding mechanism 485 is configured to switch the shielding member 481 between the reference position, the shielding position, and the retracted position is shown, but it is not limited thereto. The shielding mechanism 485 may also be configured to dispose the shielding member 481 between the shielding position between the anode 430 and the substrate Wf and the retracted position retracted from between the anode 430 and the substrate Wf. Figure 14 An example in which the shielding mechanism 485 switches the shielding member 481 between the shielding position and the retracted position is shown. In addition, Figure 14 An example of switching the arrangement position of the shielding member when a plurality of holes of the resistor body 450 are formed at equal intervals along the circumferential direction of the circular plate member is shown.

[0091] In addition, in the above-described embodiment, an example is shown in which the rotation mechanism 447 rotates the substrate holder 440 unidirectionally at a constant speed, but it is not limited thereto. The rotation mechanism 447 may also be configured to rotate the substrate holder 440 in such a manner that the first portion Wf-e of the substrate Wf at the selected azimuthal position is located in the dynamic shielding region DA defined by the resistor body 450 and the shielding member 481 at a different time from the second portion Wf-f of the substrate. The second portion Wf-f is located at an azimuthal position different from that of the first portion and has the same arc length and radius position as the first portion. The dynamic shielding region DA is a region where the shielding rate changes when the first portion Wf-e of the substrate stays in the dynamic shielding region DA as compared to when the second portion Wf-f of the substrate stays in the dynamic shielding region DA.

[0092] As Figure 14 shown, when a portion of the first portion Wf-e of the substrate has a thicker plating film thickness than the second portion Wf-f of the substrate, the shielding mechanism 485 is configured to dispose the shielding member 481 at the shielding position when the first portion Wf-e of the substrate is located in the dynamic shielding region DA. In addition, the shielding mechanism 485 is configured to dispose the shielding member 481 at the retracted position when the second portion Wf-f of the substrate is located in the dynamic shielding region DA.

[0093] In addition, the rotation mechanism 447 is configured to rotate the substrate holder 440 in such a manner that the first portion Wf-e (the portion with a thick film) of the substrate Wf stays in the dynamic shielding region DA for a longer time than the second portion Wf-f (the portion with a normal film thickness).

[0094] Figure 15 is a diagram showing the relationship between the timing of shielding the first portion Wf-e of the substrate and the rotation speed of the substrate holder. Figure 15 In the graph of, the horizontal axis represents the rotation position of the first portion Wf-e of the substrate Wf, and the vertical axis represents the position of the shielding member (shielding position or retracted position) and the rotation speed (rotation direction) of the substrate holder 440. In this example, as Figure 15 shown, when a specific position of the substrate (for example, the notch of the substrate) is set as a reference (θ = 0), in the peripheral portion in the range from θ = θ1 to θ = θ2, there is a first portion Wf-e where the deposition rate of plating is desired to be suppressed.

[0095] Figure 15 represents the position of the shielding member and the rotation speed of the substrate holder when the deposition rate of plating in the first portion Wf-e of the substrate Wf is suppressed once (the rotation direction of the substrate holder is switched twice). As Figure 15 shown, the rotation mechanism 447 first, as Figure 15As shown by arrow A, the substrate holder 440 is rotated in the first direction at a predetermined speed. Next, when the masking mechanism 485 reaches the center of the masking member 481 at the position of θ1 of the substrate Wf, the masking member 481 is pushed out to the masking position. Next, when the rotating mechanism 447 reaches the center of the masking member 481 at the position of θ2 of the substrate Wf, the rotation direction of the substrate holder 440 is switched so that the substrate holder 440 rotates in the second direction. Next, when the rotating mechanism 447 reaches the center of the masking member 481 at the position of θ1 of the substrate Wf, the rotation direction of the substrate holder 440 is switched so that the substrate holder 440 rotates in the first direction.

[0096] By switching the rotation direction of the substrate holder 440 (causing the substrate holder 440 to rotate back and forth) while the masking member 481 is disposed at the masking position, as Figure 15 shown, the masking member 481 can be disposed at the masking position for a period approximately three times longer than when the substrate holder 440 rotates at a constant speed in the first direction. Therefore, according to the present embodiment, the formation of the plating film thickness on the first portion Wf - e of the substrate Wf can be strongly suppressed.

[0097] In addition, in the present embodiment, an example is shown in which the rotation direction of the substrate holder 440 is reversed (causing the substrate holder 440 to rotate back and forth) when the first portion Wf - e of the substrate is located in the dynamic masking region DA, but it is not limited thereto. The rotating mechanism may be configured such that when the first portion Wf - e of the substrate is located in the dynamic masking region DA, the rotation speed of the substrate holder 440 is increased (accelerated) or decreased (decelerated) so that the first portion Wf - e of the substrate is located in the dynamic masking region DA at a different time from the second portion Wf - f of the substrate.

[0098] Figure 16 is a plan view schematically showing an example of switching the arrangement position of the masking member according to the distribution of the plating film thickness at the peripheral portion of the substrate. Figure 16 shows an example in which the masking mechanism 485 switches and arranges the masking member 481 between the reference position and the masking position. In addition, Figure 16 shows the switching of the arrangement position of the masking member when a plurality of holes of the resistor body 450 are formed at equal intervals in the circumferential direction of the disc member.

[0099] As Figure 16 shown, when the first portion Wf - e of the substrate includes a portion where the plating film thickness is thicker than that of the second portion Wf - f of the substrate, the masking mechanism 485 is configured to dispose the masking member 481 at the masking position when the first portion Wf - e of the substrate is located in the dynamic masking region DA. In addition, the masking mechanism 485 is configured to dispose the masking member 481 at the reference position when the second portion Wf - f of the substrate is located in the dynamic masking region DA.

[0100] In addition, similar to that described in Figure 15 , the rotation mechanism 447 is configured to rotate the substrate holder 440 by switching the rotation direction of the substrate holder 440 so that the first part Wf-e of the substrate Wf is located in the dynamic shielding area DA for a longer time than the second part Wf-f. Therefore, according to the present embodiment, it is possible to strongly suppress the formation of the plating film thickness on the first part Wf-e of the substrate Wf.

[0101] Figure 17 It is a top view schematically showing an example of switching the arrangement position of the shielding member according to the distribution of the plating film thickness at the peripheral portion of the substrate. Figure 17 It shows an example in which the shielding mechanism 485 arranges the shielding member 481 by switching between the retracted position and the shielding position. In addition, Figure 17 It shows the switching of the arrangement position of the shielding member when, for example, a plurality of holes of the resistor body 450 are formed unevenly in the circumferential direction of the circular plate member as in the embodiment shown in Figures 11 to 13 .

[0102] As shown in Figure 17 , when a part of the first part Wf-e of the substrate has a plating film thickness thicker than that of the second part Wf-f of the substrate, the shielding mechanism 485 is configured to arrange the shielding member 481 at the shielding position when the first part Wf-e of the substrate is located in the dynamic shielding area DA. In addition, the shielding mechanism 485 is configured to arrange the shielding member 481 at the retracted position when the second part Wf-f of the substrate is located in the dynamic shielding area DA.

[0103] In addition, similar to that described in Figure 15 , the rotation mechanism 447 is configured to rotate the substrate holder 440 so that the first part Wf-e (the part with a thick film) of the substrate Wf is located in the dynamic shielding area DA for a longer time than the second part Wf-f (the part with a normal film thickness). Therefore, according to the present embodiment, it is possible to strongly suppress the formation of the plating film thickness on the first part Wf-e of the substrate Wf.

[0104] Figure 18 It is a top view schematically showing an example of switching the arrangement position of the shielding member according to the distribution of the plating film thickness at the peripheral portion of the substrate. Figure 18 It shows an example in which the shielding mechanism 485 arranges the shielding member 481 by switching between the reference position and the shielding position. In addition, Figure 18 It shows the switching of the arrangement position of the shielding member when, for example, a plurality of holes of the resistor body 450 are formed unevenly in the circumferential direction of the circular plate member as in the embodiment shown in Figures 11 to 13 .

[0105] As shown in Figure 18As shown, when the first part Wf-e of the substrate includes a portion where the thickness of the plating film is thicker than that of the second part Wf-f of the substrate, the shielding mechanism 485 is configured to dispose the shielding member 481 at the shielding position when the first part Wf-e of the substrate is located in the dynamic shielding region DA. Further, the shielding mechanism 485 is configured to dispose the shielding member 481 at the reference position when the second part Wf-f of the substrate is located in the dynamic shielding region DA.

[0106] Further, similar to that described in Figure 15 the rotation mechanism 447 is configured to rotate the substrate holder 440 such that the first part Wf-e (the part with a thick film) of the substrate Wf is located in the dynamic shielding region DA for a longer time than the second part Wf-f (the part with a normal film thickness). Therefore, according to the present embodiment, the formation of the plating film thickness on the first part Wf-e of the substrate Wf can be strongly suppressed.

[0107] Figure 19 It is a top view schematically showing an example of switching the arrangement position of the shielding member according to the distribution of the plating film thickness at the peripheral portion of the substrate. Figure 19 It shows an example in which the shielding mechanism 485 switches and disposes the shielding member 481 between the shielding position and the retracted position. Further, Figure 19 it shows the switching of the arrangement position of the shielding member when, for example, as in the embodiment shown in Figures 11 to 13 a plurality of holes of the resistor body 450 are formed unevenly in the circumferential direction of the circular plate member.

[0108] As Figure 19 shown, when the first part Wf-e of the substrate includes a portion where the thickness of the plating film is thinner than that of the second part Wf-f of the substrate, the shielding mechanism 485 is configured to dispose the shielding member 481 at the retracted position when the first part Wf-e of the substrate is located in the dynamic shielding region DA. Further, the shielding mechanism 485 is configured to dispose the shielding member 481 at the shielding position when the second part Wf-f of the substrate is located in the dynamic shielding region DA.

[0109] Further, similar to that described in Figure 15 the rotation mechanism 447 is configured to rotate the substrate holder 440 such that the first part Wf-e (the part with a thin film) of the substrate Wf is located in the dynamic shielding region DA for a longer time than the second part Wf-f (the part with a normal film thickness). Therefore, according to the present embodiment, the formation of the plating film thickness on the first part Wf-e of the substrate Wf can be strongly promoted.

[0110] Figure 20 It is a top view schematically showing an example of switching the arrangement position of the shielding member according to the distribution of the plating film thickness at the peripheral portion of the substrate. Figure 20An example is shown in which the shielding mechanism 485 switches and arranges the shielding member 481 between the reference position, the shielding position, and the retracted position. In addition, Figure 20 This represents, for example, Figures 11 to 13 the switching of the arrangement position of the shielding member when the plurality of holes of the resistor body 450 are formed unevenly in the circumferential direction of the circular plate member as in the embodiment shown.

[0111] As Figure 20 shown, when the first part Wf - e1 of the substrate includes a portion where the thickness of the plating film is thicker than that of the second part Wf - f of the substrate, the shielding mechanism 485 is configured to arrange the shielding member 481 at the shielding position when the first part Wf - e1 of the substrate is located in the dynamic shielding region DA. In addition, when the first part Wf - e2 of the substrate includes a portion where the thickness of the plating film is thinner than that of the second part Wf - f of the substrate, the shielding mechanism 485 is configured to arrange the shielding member 481 at the retracted position when the first part Wf - e2 of the substrate is located in the dynamic shielding region DA. In addition, the shielding mechanism 485 is configured to arrange the shielding member 481 at the reference position when the second part Wf - f of the substrate is located in the dynamic shielding region DA.

[0112] In addition, similar to that described in Figure 15 the rotation mechanism 447 is configured to rotate the substrate holder 440 such that the first parts Wf - e1 (the part with a thick film) and e2 (the part with a thin film) of the substrate Wf are located in the dynamic shielding region DA for a longer time than the second part Wf - f (the part with a normal film thickness). Therefore, according to the present embodiment, it is possible to strongly suppress the formation of the plating film thickness on the first part Wf - e1 of the substrate Wf and strongly promote the formation of the plating film thickness on the first part Wf - e2 of the substrate Wf.

[0113] The above describes several embodiments of the present invention, but the above-described embodiments of the invention are for easy understanding of the present invention and do not limit the present invention. The present invention can be changed and improved without departing from its gist, and of course, equivalents thereof are included in the present invention. In addition, within the scope of being able to solve at least a part of the above problems or achieving at least a part of the effects, the respective constituent elements described in the claims and the specification can be arbitrarily combined or omitted.

[0114] As an embodiment, the present application discloses a plating apparatus, which includes: a plating tank configured to accommodate a plating solution; an anode disposed in the plating tank; a substrate holder configured to hold a substrate with the surface to be plated facing downward; a lifting mechanism configured to lift and lower the substrate holder; a rotating mechanism configured to rotate the substrate holder; a shielding member capable of shielding an electric field formed between the anode and the substrate; and a shielding mechanism configured to switch the shielding member between a reference position between the anode and the substrate, a shielding position where the electric field shielding area is larger than the reference position, and a retracted position where the shielding member retracts from between the anode and the substrate.

[0115] In addition, as an embodiment, the present application discloses a plating apparatus, wherein the shielding mechanism is configured to switch the shielding member between the reference position, the shielding position, and the retracted position according to the distribution of the plating film thickness formed on the peripheral portion of the substrate.

[0116] In addition, as an embodiment, the present application discloses a plating apparatus, which further includes a film thickness sensor configured to measure the plating film thickness of the peripheral portion of the substrate, and the shielding mechanism is configured to switch the shielding member between the reference position, the shielding position, and the retracted position according to the distribution of the plating film thickness of the peripheral portion of the substrate measured by the film thickness sensor.

[0117] In addition, as an embodiment, the present application discloses a plating apparatus, wherein for the first peripheral portion of the substrate having a first plating film thickness, the shielding member is disposed at the reference position; for the second peripheral portion of the substrate having a second plating film thickness thicker than the first plating film thickness, the shielding member is disposed at the shielding position; and for the third peripheral portion of the substrate having a third plating film thickness thinner than the first plating film thickness, the shielding member is disposed at the retracted position.

[0118] In addition, as an embodiment, the present application discloses a plating apparatus, wherein the shielding mechanism is configured to switch the shielding member between the reference position, the shielding position, and the retracted position according to the type of the substrate held by the substrate holder.

[0119] Further, as an embodiment, the present application discloses a plating method, which includes: a lowering step of lowering a substrate holder holding a substrate in a state where the surface to be plated faces downward into a plating bath; a rotating step of rotating the substrate holder; a plating step of performing a plating treatment on the surface to be plated of the substrate lowered into the plating bath; and a shielding step of configuring a shielding member capable of shielding an electric field formed between an anode and the substrate disposed in the plating bath to switch between a reference position between the anode and the substrate, a shielding position where the electric field shielding area is larger than the reference position, and a retracted position retracted from between the anode and the substrate.

[0120] Further, as an embodiment, the present application discloses a plating method, wherein the shielding step is configured to switch the shielding member between the reference position, the shielding position, and the retracted position according to the distribution of the plating film thickness formed on the peripheral portion of the substrate.

[0121] Further, as an embodiment, the present application discloses a plating method, which further includes a measuring step of measuring the plating film thickness of the peripheral portion of the substrate, and the shielding step is configured to switch the shielding member between the reference position, the shielding position, and the retracted position according to the distribution of the plating film thickness of the peripheral portion of the substrate measured by the measuring step.

[0122] Further, as an embodiment, the present application discloses a plating method, wherein the shielding step includes: a first configuration step of configuring the shielding member at the reference position for a first peripheral portion of the substrate having a first plating film thickness formed thereon; a second configuration step of configuring the shielding member at the shielding position for a second peripheral portion of the substrate having a second plating film thickness thicker than the first plating film thickness; and a third configuration step of configuring the shielding member at the retracted position for a third peripheral portion of the substrate having a third plating film thickness thinner than the first plating film thickness.

[0123] Further, as an embodiment, the present application discloses a plating method, which further includes a determination step of determining the type of the substrate held by the substrate holder, and the shielding step is configured to switch the shielding member between the reference position, the shielding position, and the retracted position according to the type of the substrate determined by the determination step.

[0124] In addition, as an embodiment, the present application discloses a plating apparatus, wherein the plating apparatus includes: a plating bath configured to contain a plating solution; an anode disposed in the plating bath; a substrate holder configured to hold a substrate with the surface to be plated facing downward; a resistor disposed between the anode and the substrate holder and having a partial shielding region; a lifting mechanism configured to lift and lower the substrate holder; a rotating mechanism configured to rotate the substrate holder; a shielding member capable of shielding an electric field formed between the anode and the substrate; and a shielding mechanism configured to position the shielding member between a shielding position between the anode and the substrate and a retracted position retracted from between the anode and the substrate. The rotating mechanism is configured to rotate the substrate holder in such a manner that a first portion of the substrate located at a selected azimuthal position is located in the dynamic shielding region at a different time from a second portion of the substrate, wherein the second portion of the substrate is located at an azimuthal position different from the first portion and has the same arc length and radius position as the first portion, and the dynamic shielding region is a region where the resistor overlaps the shielding member when the shielding member is disposed at the shielding position.

[0125] In addition, as an embodiment, the present application discloses a plating apparatus, wherein the rotating mechanism is configured to, when the first portion of the substrate is located in the dynamic shielding region, cause the first portion of the substrate to be located in the dynamic shielding region at a different time from the second portion of the substrate by increasing or decreasing the rotation speed of the substrate holder or reversing the rotation direction of the substrate holder.

[0126] In addition, as an embodiment, the present application discloses a plating apparatus, wherein the first portion of the substrate includes a portion where the plating film thickness is thicker than that of the second portion of the substrate or a portion where the plating film thickness is thinner than that of the second portion of the substrate.

[0127] In addition, as an embodiment, the present application discloses a plating apparatus, wherein, when the first portion of the substrate includes a portion where the plating film thickness is thicker than that of the second portion of the substrate, the shielding mechanism is configured to position the shielding member at the shielding position when the first portion of the substrate is located in the dynamic shielding region.

[0128] In addition, as an embodiment, the present application discloses a plating apparatus, wherein, when the first portion of the substrate includes a portion where the plating film thickness is thinner than that of the second portion of the substrate, the shielding mechanism is configured to position the shielding member at the retracted position when the first portion of the substrate is located in the dynamic shielding region.

[0129] Further, as an embodiment, the present application discloses a plating apparatus, wherein when the first portion of the substrate stays in the dynamic shielding region, the shielding rate changes as compared with when the second portion of the substrate stays in the dynamic shielding region.

[0130] Further, as an embodiment, the present application discloses a plating apparatus, which includes: a plating bath configured to contain a plating solution; an anode disposed in the plating bath; a substrate holder configured to hold a substrate in a state where the surface to be plated faces downward; a resistor disposed between the anode and the substrate holder and having a plurality of holes penetrating the anode side and the substrate holder side; a lifting mechanism configured to lift and lower the substrate holder; a rotating mechanism configured to rotate the substrate holder; a shielding member capable of shielding an electric field formed between the anode and the substrate; and a shielding mechanism configured to dispose the shielding member between a shielding position between the anode and the substrate and a retracted position retracted from between the anode and the substrate. The resistor includes, in a dynamic shielding region overlapping with the shielding member disposed at the shielding position: a first region having a first shielding rate; a second region disposed inside and separated from the first region and having a second shielding rate greater than the first shielding rate; and a third region disposed between the first region and the second region and having a third shielding rate greater than the first shielding rate and smaller than the second shielding rate. The third region extends along the circumferential direction beyond the dynamic shielding region and has the third shielding rate uniformly in the extended region. The resistor includes a fourth region disposed inside the second region and in other circumferential portions of the second region and having a fourth shielding rate smaller than the second shielding rate and the same as the third shielding rate.

[0131] Further, as an embodiment, the present application discloses a plating apparatus, wherein the resistor further includes a fifth region disposed in other circumferential portions of the first region and other circumferential portions of the third region and having an opening larger than the holes.

[0132] Further, as an embodiment, the present application discloses a plating apparatus, wherein the resistor further includes a sixth region disposed in other circumferential portions of the first region and the fifth region and having a sixth shielding rate greater than the first shielding rate.

[0133] Further, as an embodiment, the present application discloses a plating apparatus, wherein the first region has an area less than 0.35% of the total area of the resistor facing the substrate held by the substrate holder.

[0134] Description of Reference Numerals

[0135] 400... plating module; 410... plating bath; 430... anode; 440... substrate holder; 443... lifting mechanism; 447... rotating mechanism; 450... resistor body; 452... hole; 454... opening; 481... shielding member; 485... shielding mechanism; 490... film thickness sensor; 1000... plating apparatus; Wf... substrate; Wf-a... surface to be plated; Wf-b... first peripheral portion; Wf-c... second peripheral portion; Wf-d... third peripheral portion; Wf-e... first portion; Wf-f... second portion; DA... dynamic shielding area; S1... first area; S2... second area; S3... third area; S4... fourth area; S5... fifth area; S6... sixth area.

Claims

1. A plating device, characterized in that: Include: a plating tank configured to contain a plating solution; an anode, the anode being disposed in the plating tank; a substrate holder configured to hold the substrate with the plated surface facing downward; a lifting mechanism configured to lift and lower the substrate support; a rotating mechanism configured to rotate the substrate holder; a shielding member capable of shielding an electric field formed between the anode and the substrate; as well as A shielding mechanism is configured to switch the shielding member between a reference position between the anode and the substrate, a shielding position where the electric field shielding area is larger than the reference position, and a retreat position where the shielding member is retreated from between the anode and the substrate.

2. The plating device according to claim 1, characterized in that: The shielding mechanism is configured to arrange the shielding member so as to be switched among the reference position, the shielding position, and the retracted position according to the distribution of the thickness of the plated film formed on the peripheral edge portion of the substrate.

3. The plating device according to claim 1, characterized in that: The device further comprises a film thickness sensor configured to measure the thickness of the plated film at the peripheral portion of the substrate. The shielding mechanism is configured to switch the shielding member between the reference position, the shielding position, and the retracted position according to the distribution of the plating film thickness at the peripheral portion of the substrate measured by the film thickness sensor.

4. The plating device according to claim 2 or 3, characterized in that: The shielding mechanism is configured such that the shielding member is arranged at the reference position for the first peripheral portion of the substrate formed with the first plating film thickness, the shielding member is arranged at the shielding position for the second peripheral portion of the substrate formed with the second plating film thickness thicker than the first plating film thickness, and the shielding member is arranged at the retreat position for the third peripheral portion of the substrate formed with the third plating film thickness thinner than the first plating film thickness.

5. The plating device according to claim 1, characterized in that: The shielding mechanism is configured to arrange the shielding member so as to be switched among the reference position, the shielding position, and the retracted position according to the type of the substrate held by the substrate holder.

6. A plating method, characterized in that: include: A lowering step of lowering a substrate holder holding the substrate with the surface to be plated facing downward into the plating tank; a rotating step of rotating the substrate support; a plating step of plating the surface to be plated of the substrate lowered into the plating tank; as well as A shielding step, in which a shielding member capable of shielding the electric field formed between an anode and a substrate arranged in the plating tank is configured to switch between a reference position between the anode and the substrate, a shielding position in which the electric field shielding area is larger than the reference position, and a retreat position retreated from between the anode and the substrate.

7. The plating method according to claim 6, characterized in that: The shielding step is configured to arrange the shielding member so as to be switched among the reference position, the shielding position, and the retreat position according to the distribution of the thickness of the plated film formed on the peripheral portion of the substrate.

8. The plating method according to claim 6, characterized in that: The method further comprises a measuring step of measuring the thickness of the plated film at the peripheral edge of the substrate. The shielding step is configured to configure the shielding member to be switched among the reference position, the shielding position, and the retreat position according to the distribution of the plating film thickness of the peripheral portion of the substrate measured in the measuring step.

9. The plating method according to claim 7 or 8, characterized in that: The shielding step includes: a first configuration step, in which the shielding member is configured at the reference position for the first peripheral portion of the substrate formed with a first plating film thickness; a second configuration step, in which the shielding member is configured at the shielding position for the second peripheral portion of the substrate formed with a second plating film thickness thicker than the first plating film thickness; and a third configuration step, in which the shielding member is configured at the retreat position for the third peripheral portion of the substrate formed with a third plating film thickness thinner than the first plating film thickness.

10. The plating method according to claim 6, characterized in that: The method further comprises a determination step of determining the type of the substrate held by the substrate holder, The shielding step is configured to arrange the shielding member so as to be switched among the reference position, the shielding position, and the retracted position according to the type of the substrate determined in the determining step.

11. A plating device, characterized in that: Include: a plating tank configured to contain a plating solution; an anode, the anode being disposed in the plating tank; a substrate holder configured to hold the substrate with the plated surface facing downward; A resistor, the resistor being disposed between the anode and the substrate support and having a local shielding area; a lifting mechanism configured to lift and lower the substrate support; a rotating mechanism configured to rotate the substrate holder; a shielding member capable of shielding an electric field formed between the anode and the substrate; and a shielding mechanism configured to arrange the shielding member between a shielding position between the anode and the substrate and a retreat position retreated from between the anode and the substrate, The rotating mechanism is configured to rotate the substrate holder in such a manner that a first portion of the substrate located at a selected azimuthal position is located in a dynamic shielding area at a different time from a second portion of the substrate, wherein the second portion of the substrate is located at an azimuthal position different from that of the first portion and has the same arc length and radius position as the first portion, and the dynamic shielding area is an area where the resistor overlaps with the shielding member when the shielding member is configured at the shielding position.

12. The plating device according to claim 11, characterized in that: The rotating mechanism is configured to increase or decrease the rotation speed of the substrate holder, or reverse the rotation direction of the substrate holder, when the first portion of the substrate is located in the dynamic shielding area, so that the first portion of the substrate is located in the dynamic shielding area at a different time from the second portion of the substrate.

13. The plating device according to claim 12, characterized in that: The first portion of the substrate includes a portion where the plated film thickness is thicker than that of the second portion of the substrate or a portion where the plated film thickness is thinner than that of the second portion of the substrate.

14. The plating device according to claim 13, characterized in that: When the first portion of the substrate includes a portion having a plated film thickness thicker than that of the second portion of the substrate, The shielding mechanism is configured to arrange the shielding member at the shielding position when the first portion of the substrate is located in the dynamic shielding area.

15. The plating device according to claim 13, characterized in that: When the first portion of the substrate includes a portion having a plated film thickness thinner than that of the second portion of the substrate, The shielding mechanism is configured to arrange the shielding member at the retreat position when the first portion of the substrate is located in the dynamic shielding area.

16. The plating device according to claim 15, characterized in that: The dynamic shielding region has a shielding rate that changes when the first portion of the substrate stays in the dynamic shielding region compared to when the second portion of the substrate stays in the dynamic shielding region.

17. A plating device, characterized in that: Include: a plating tank configured to contain a plating solution; an anode, the anode being disposed in the plating tank; a substrate holder configured to hold the substrate with the plated surface facing downward; A resistor, the resistor being disposed between the anode and the substrate support and having a plurality of holes penetrating the anode side and the substrate support side; a lifting mechanism configured to lift and lower the substrate support; a rotating mechanism configured to rotate the substrate holder; a shielding member capable of shielding an electric field formed between the anode and the substrate; and a shielding mechanism configured to arrange the shielding member between a shielding position between the anode and the substrate and a retreat position retreated from between the anode and the substrate, The resistor, in a dynamic shielding area overlapping with the shielding member arranged at the shielding position, includes: a first area, the first area having a first shielding rate; a second area, the second area being arranged on the inner side away from the first area and having a second shielding rate greater than the first shielding rate; and a third area, the third area being arranged between the first area and the second area and having a third shielding rate greater than the first shielding rate and smaller than the second shielding rate, the third area extending circumferentially beyond the dynamic shielding area and having the third shielding rate uniformly in the extended area, The resistor includes a fourth region, the fourth region is arranged inside the second region and at other portions in the circumferential direction of the second region, and has a fourth shielding ratio that is smaller than the second shielding ratio and is the same as the third shielding ratio.

18. The plating device according to claim 17, characterized in that: The resistor further includes a fifth region, which is disposed at another portion of the first region and another portion of the third region in the circumferential direction and has an opening larger than the hole.

19. The plating device according to claim 18, characterized in that: The resistor further includes a sixth region, which is disposed in other portions of the first region and the fifth region in the circumferential direction and has a sixth shielding ratio greater than the first shielding ratio.

20. The plating device according to any one of claims 17 to 19, characterized in that: The first region has an area less than 0.35% of a total area of ​​the resistor facing the substrate held by the substrate holder.

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