Active gas generating device

Abstract

The purpose of the present invention is to provide a structure for an active gas generation device capable of supplying a high-purity active gas without complicating the manufacturing process. The electrode unit (81) has a dielectric protective film (FC2) in close contact with the lower surface of the dielectric film (F2) using the dielectric film (F2) of the dielectric films (F2) and (F3) as the dielectric film to be protected. In a dielectric space (18), which is a space in which the dielectric protective film (FC2) and the dielectric film (F3) face each other, a discharge space (4) is provided so as to include a region in which the high-voltage electrode (F5) and the ground electrode (F6) overlap in plan view. The constituent material of the dielectric protective film (FC2) has a protective characteristic that, when a dielectric barrier discharge occurs in the discharge space (4), the dielectric protective film (FC2) blocks the irradiation of ions generated by the dielectric barrier discharge to the dielectric film (F2) and does not chemically react with the ions.

Description

Technical Field

[0001] The present invention relates to an active gas generation device having an electrode structure in a parallel plate manner, and generating active gas by dielectric barrier discharge. Background Art

[0002] In a conventional active gas generation device having an electrode structure in a parallel plate manner and using dielectric barrier discharge, the gap between the mutually opposed metal electrodes (electrode conductive films) and the dielectric film (electrode dielectric film), or the gap between the mutually opposed dielectric films becomes a discharge space.

[0003] The conventional active gas generation device employs the following parallel plate type dielectric barrier discharge: generating dielectric barrier discharge in the discharge space to activate the raw material gas introduced into the discharge space to generate active gas.

[0004] As an active gas generation device employing parallel plate type dielectric barrier discharge, for example, there is an active gas generation device disclosed in Patent Document 1.

[0005] Prior Art Documents

[0006] Patent Documents

[0007] Patent Document 1: International Publication No. 2019 / 138456 Summary of the Invention

[0008] Problems to be Solved by the Invention

[0009] Such a conventional active gas generation device generates dielectric barrier discharge in the discharge space. Therefore, depending on the type of the raw material gas and the material of the dielectric film, there may occur a dielectric film reaction phenomenon in which ions generated by the dielectric barrier discharge chemically react with the dielectric film, and elements or their compounds constituting the dielectric film are released from the dielectric film.

[0010] When the dielectric film reaction phenomenon occurs, the released elements or their compounds are mixed with the active gas, which means that impurities are mixed into the active gas. In order to prevent such a dielectric film reaction phenomenon, theoretically, it can be dealt with by changing the material of the dielectric film to a material that does not undergo chemical reaction.

[0011] However, in the case where the workability of the changed material is poor, or in the case where the shape of the dielectric film is a complex shape, there is a problem that the manufacturing process for forming the dielectric film with a complex shape becomes complicated.

[0012] Thus, the conventional active gas generation device has problems that the above-mentioned dielectric film reaction phenomenon cannot be suppressed, and high-purity active gas cannot be generated without complicating the manufacturing process.

[0013] An object of the present invention is to provide an active gas generation device that solves the above-mentioned problems and can supply high-purity active gas without complicating the manufacturing process.

[0014] Means for Solving the Problem

[0015] The active gas generation device according to the present invention includes an electrode unit that activates a raw material gas supplied to a discharge space to generate an active gas. The electrode unit is characterized in that it includes: a first electrode forming portion; and a second electrode forming portion provided below the first electrode forming portion. The first electrode forming portion includes a first electrode dielectric film and a first electrode conductive film provided on the upper surface of the first electrode dielectric film. The second electrode forming portion includes a second electrode dielectric film and a second electrode conductive film provided on the lower surface of the second electrode dielectric film. A dielectric space is provided between the first electrode dielectric film and the second electrode dielectric film. The discharge space includes, within the dielectric space, a region where the first and second electrode conductive films overlap in a top view, that is, a main discharge space. The electrode unit further includes: a dielectric protection member provided on the dielectric space side with respect to at least one of the first electrode dielectric film and the second electrode dielectric film, that is, a protected object dielectric film. The constituent material of the dielectric protection member has a protection property of blocking the irradiation of ions generated by the dielectric barrier discharge to the protected object dielectric film and not reacting chemically with the ions in the discharge space.

[0016] Advantages of the Invention

[0017] In the active gas generation device of the present invention, there is a dielectric protection member having the above protection property between the dielectric space including the discharge space and the protected object dielectric film. Therefore, when a dielectric barrier discharge occurs in the discharge space, a dielectric film reaction phenomenon in which the protected object dielectric film reacts with ions can be suppressed.

[0018] As a result, the active gas generation device of the present invention can reliably avoid the mixing of elements of the protected object dielectric film and the like into the discharge space accompanying the dielectric film reaction phenomenon, and thus can generate high-purity active gas.

[0019] In addition, the electrode unit can be constituted only by adding a dielectric protection member without changing the constituent materials of the first and second electrode dielectric films compared to the past. Therefore, the manufacturing process of the electrode unit is not complicated.

[0020] The object, features, solutions, and advantages of the present invention will become clearer through the following detailed description and drawings. Description of the Drawings

[0021] Figure 1 is a top view schematically showing the planar structure of the active gas generation device according to Embodiment 1 of the present invention.

[0022] Figure 2 represents Figure 1 a cross-sectional view of the cross-sectional structure of the A-A section.

[0023] Figure 3 is an explanatory diagram (Part 1) schematically showing the planar structure of the electrode unit.

[0024] Figure 4 represents Figure 3 an explanatory diagram of the cross-sectional structure of the B-B section.

[0025] Figure 5 is an explanatory diagram (Part 2) schematically showing the planar structure of the electrode unit.

[0026] Figure 6 represents Figure 5 an explanatory diagram of the cross-sectional structure of the C-C section.

[0027] Figure 7 is an explanatory diagram schematically showing the planar structure of the housing.

[0028] Figure 8 is an explanatory diagram schematically showing the cross-sectional structure of the housing.

[0029] Fig. 9 is an explanatory diagram schematically showing the planar structure of the high-voltage side dielectric film.

[0030] Fig.10 is an explanatory diagram schematically showing the cross-sectional structure of the high-voltage side dielectric film.

[0031] Fig.11 is an explanatory diagram schematically showing the planar structure of the ground side dielectric film.

[0032] Fig.12 is an explanatory diagram schematically showing the cross-sectional structure of the ground side dielectric film.

[0033] Fig.13 is an explanatory diagram schematically showing the planar structure of the power supply body.

[0034] Fig.14 is an explanatory diagram schematically showing the cross-sectional structure of the power supply body.

[0035] Fig.15 is an explanatory diagram schematically showing the planar structure of the ground conductor.

[0036] Fig.16 is an explanatory diagram schematically showing the cross-sectional structure of the ground conductor.

[0037] Fig.17 is an explanatory diagram showing details in the region of interest of Fig.16 .

[0038] Fig.18 is an explanatory diagram schematically showing the planar structure of the cover dielectric film.

[0039] Fig.19 is an explanatory diagram schematically showing the cross-sectional structure of the cover dielectric film.

[0040] Fig. 20 is an explanatory diagram schematically showing the planar structure of the ground-side electrode forming portion.

[0041] Fig.21 is an explanatory diagram schematically showing the cross-sectional structure of the ground-side electrode forming portion.

[0042] Fig. 22 is an explanatory diagram schematically showing the planar structure of the shielding dielectric film.

[0043] Fig.23 is an explanatory diagram schematically showing the cross-sectional structure of the shielding dielectric film.

[0044] Fig.24 is an explanatory diagram schematically showing the planar structure of the dielectric film support member.

[0045] Fig.25 is an explanatory diagram schematically showing the cross-sectional structure of the dielectric film support member.

[0046] Fig.26 is an explanatory diagram schematically showing the planar structure of the dielectric film pressing member.

[0047] Fig. 27 is an explanatory diagram schematically showing the cross-sectional structure of the dielectric film pressing member.

[0048] Fig.28 is schematically showing Fig. 27 details in the region of interest of

[0049] Fig.29 is an explanatory diagram schematically showing the planar structure of the pressing member.

[0050] Fig.30 is an explanatory diagram schematically showing the cross-sectional structure of the pressing member.

[0051] Fig.31 is an explanatory diagram schematically showing the jetting mode of the active gas of the electrode unit in the active gas generation device of Embodiment 1.

[0052] Fig.32It is an explanatory diagram schematically showing the ejection mode of the ideal active gas in the electrode unit of Embodiment 1.

[0053] Fig.33 It is an explanatory diagram showing the cross-sectional structure of the electrode unit in the active gas generation device of Embodiment 2.

[0054] Fig.34 It is an explanatory diagram (Part 1) schematically showing the structure of the ground conductor in Embodiment 2.

[0055] Fig.35 It is an explanatory diagram (Part 2) schematically showing the structure of the ground conductor in Embodiment 2.

[0056] Fig.36 It is an explanatory diagram (Part 1) schematically showing the cross-sectional structure of a plurality of gas ejection ports in Embodiment 2.

[0057] Fig.37 It is an explanatory diagram (Part 2) schematically showing the cross-sectional structure of a plurality of gas ejection ports in Embodiment 2.

[0058] Fig.38 It is an explanatory diagram (Part 1) showing the ejection mode of the active gas inside the housing opening of the electrode unit in Embodiment 2.

[0059] Fig.39 It is an explanatory diagram (Part 2) showing the ejection mode of the active gas inside the housing opening of the electrode unit in Embodiment 2.

[0060] Fig.40 It is an explanatory diagram (Part 3) showing the ejection mode of the active gas inside the housing opening of the electrode unit in Embodiment 2.

[0061] Fig.41 It is an explanatory diagram (Part 4) showing the ejection mode of the active gas inside the housing opening of the electrode unit in Embodiment 2.

[0062] Fig.42 It is an explanatory diagram schematically showing the basic mode of the electrode unit used in the active gas generation device of Embodiment 3.

[0063] Fig.43 It is an explanatory diagram showing the concept of the electrode unit used in the active gas generation device of the second mode of Embodiment 3.

[0064] Fig.44 It is an explanatory diagram showing the cross-sectional structure of the electrode unit 811 used in the active gas generation device of the second mode of Embodiment 3.

[0065] Fig.45 It is schematically showing Fig.44Explanatory drawing of the planar structure of the dielectric film support member shown.

[0066] Fig.46 Explanatory drawing schematically showing the basic form of the electrode unit used in the active gas generation device of Embodiment 4.

[0067] Fig.47 Explanatory drawing schematically showing the basic form of the electrode unit used in the active gas generation device of Embodiment 5.

[0068] Fig.48 Explanatory drawing schematically showing the concept of the electrode unit 830 used in the active gas generation device of the second form of Embodiment 5.

[0069] Fig.49 Explanatory drawing showing the cross-sectional structure of the electrode unit 831 used in the active gas generation device of the second form of Embodiment 5.

[0070] Fig.50 Schematically shows Fig.49 Explanatory drawing of the detailed structure of the region of interest.

[0071] Fig.51 Schematically shows Fig.49 Explanatory drawing of the planar structure of the dielectric film support member shown.

[0072] Fig.52 Explanatory drawing schematically showing the basic form of the electrode unit used in the active gas generation device of Embodiment 6.

[0073] Fig.53 Explanatory drawing schematically showing the basic form of the electrode unit used in the active gas generation device of Embodiment 7.

[0074] Fig.54 Explanatory drawing (part 1) for showing the effect of the active gas generation device of Embodiment 7.

[0075] Fig.55 Explanatory drawing (part 2) for showing the effect of the active gas generation device of Embodiment 7.

[0076] Fig.56 Explanatory drawing (part 3) for showing the effect of the active gas generation device of Embodiment 7.

[0077] Fig.57 Explanatory drawing showing the cross-sectional structure of the electrode unit used in the active gas generation device of the second form of Embodiment 7.

[0078] Fig.58 Shows Fig.57Explanation diagram of the details of the region of interest.

[0079] Fig.59 Explanation diagram showing the cross-sectional structure of the active gas generation device of the first and second modes of Embodiment 8.

[0080] Fig.60 Shows the first mode of Embodiment 8 Fig.59 Explanation diagram of the detailed structure of the region of interest.

[0081] Fig.61 Shows the second mode of Embodiment 8 Fig.59 Explanation diagram of the detailed structure of the region of interest. Detailed implementation

[0082] <Embodiment 1>

[0083] Figure 1 Top view schematically showing the planar structure of the active gas generation device 71 of Embodiment 1 of the present invention.

[0084] As shown in this figure, in the active gas generation device 71, three electrode units 51 to 53 are housed in the housing 1. The raw material gas G1 is supplied to the electrode units 51 to 53 via the gas flow path 21. Then, the electrode units 51 to 53 activate the raw material gas G1 supplied to the discharge space 4 to generate the active gas G2.

[0085] Figure 2 Shows Figure 1 Cross-sectional view of the cross-sectional structure of the A-A section. Figure 3 to Figure 6 Explanation diagram for partially explaining the structure of the electrode unit 50. In addition, the electrode unit 50 corresponds to any one of the electrode units 51 to 53. In addition, the electrode units 51 to 53 have the same structure as each other.

[0086] Figure 3 Explanation diagram schematically showing the planar structure of the electrode unit 50. Figure 4 Shows Figure 3 Explanation diagram of the cross-sectional structure of the B-B section. Figure 3 And Figure 4 Becomes the first explanation diagram showing the structure of the ground conductor 6 and its surroundings.

[0087] Figure 5 Explanation diagram schematically showing the planar structure of the electrode unit 50. Figure 6 Shows Figure 5 Explanation diagram of the cross-sectional structure of the C-C section. Figure 5 And Figure 6 Becomes the second explanation diagram showing the detailed structure of the ground conductor 6 and its surroundings.

[0088] Figure 7 to Figure 30 It is an explanatory diagram showing details of the constituent members of the electrode unit 50. Figure 7 And Figure 8 It is an explanatory diagram schematically showing the structure of the housing 1. Figure 7 It shows the planar structure of the housing 1, Figure 8 It shows the cross-sectional structure of the housing 1.

[0089] Fig. 9 And Fig.10 They are respectively explanatory diagrams schematically showing the structure of the high-voltage side dielectric film 2. Fig. 9 It shows the planar structure of the high-voltage side dielectric film 2, Fig.10 It shows the cross-sectional structure of the high-voltage side dielectric film 2.

[0090] Fig.11 And Fig.12 They are respectively explanatory diagrams schematically showing the structure of the ground side dielectric film 3. Fig.11 It shows the planar structure of the ground side dielectric film 3, Fig.12 It shows the cross-sectional structure of the ground side dielectric film 3.

[0091] Fig.13 And Fig.14 They are respectively explanatory diagrams schematically showing the structure of the power supply body 5. Fig.13 It shows the planar structure of the power supply body 5, Fig.14 It shows the cross-sectional structure of the power supply body 5.

[0092] Figure 15 to Figure 17 They are respectively explanatory diagrams schematically showing the structure of the ground conductor 6. Fig.15 It shows the planar structure of the ground conductor 6, Fig.16 It shows the cross-sectional structure of the ground conductor 6. Fig.17 It shows Fig.16 Details in the region of interest R1 of

[0093] Fig.18 And Fig.19 They are respectively explanatory diagrams schematically showing the structure of the cover dielectric film 8. Fig.18 It shows the planar structure of the cover dielectric film 8, Fig.19 It shows the cross-sectional structure of the cover dielectric film 8.

[0094] Fig. 20 And Fig.21 They are respectively explanatory diagrams schematically showing the structure of the ground side electrode forming portion E2. Fig. 20 It shows the planar structure of the ground side electrode forming portion E2, Fig.21 It shows the cross-sectional structure of the ground side electrode forming portion E2. The ground side electrode forming portion E2 includes a combined structure of the ground side dielectric film 3, the conductive film 7, and the cover dielectric film 8.

[0095] Fig. 22 and Fig.23 are explanatory diagrams schematically showing the structure of the shielding dielectric film 9, respectively. Fig. 22 shows the planar structure of the shielding dielectric film 9, Fig.23 shows the cross-sectional structure of the shielding dielectric film 9.

[0096] Fig.24 and Fig.25 are explanatory diagrams schematically showing the structure of the dielectric film support member 10, respectively. Fig.24 shows the planar structure of the dielectric film support member 10, Fig.25 shows the cross-sectional structure of the dielectric film support member 10.

[0097] Figure 26 to Figure 28 are explanatory diagrams schematically showing the structure of the dielectric film pressing member 11, respectively. Fig.26 shows the planar structure of the dielectric film pressing member 11, Fig. 27 shows the cross-sectional structure of the dielectric film pressing member 11, Fig.28 shows Fig. 27 the details in the region of interest R2.

[0098] Fig.29 and Fig.30 are explanatory diagrams schematically showing the structure of the pressing member 12, respectively. Fig.29 shows the planar structure of the pressing member 12, Fig.30 shows the cross-sectional structure of the pressing member 12.

[0099] In addition, Figures 1 to 30 schematically show the active gas generation device 71, the electrode unit 50, or the constituent members of the electrode unit 50, respectively. The shapes including the scale may not be consistent between Figures 1 to 30 . In addition, XYZ orthogonal coordinate systems are respectively described in Figures 1 to 30 .

[0100] Hereinafter, the active gas generation device 71 of Embodiment 1 will be described with appropriate reference to the above Figures 1 to 30 .

[0101] (Overall structure)

[0102] As Figure 1 shown, the active gas generation device 71 includes: electrode units 51 to 53 as a plurality of electrode units; and a housing 1 that houses the electrode units 51 to 53 in the internal space S1 of the housing (see Figure 8 ).

[0103] As Figure 2 and Figure 7As shown, the housing 1 has a housing bottom 1a, which includes a flat surface 1F and a conductor accommodation space 6S that is recessed from the flat surface 1F in the depth direction.

[0104] As Figure 8 shown, the housing 1 has a housing bottom 1a, a housing side portion 1b, and a housing upper portion 1c, and an inner housing space S1 for accommodating the electrode units 51 to 53 is formed by the housing bottom 1a, the housing side portion 1b, and the housing upper portion 1c.

[0105] The electrode units 51 to 53 are respectively accommodated in the inner housing space S1 of the housing 1 in such a manner that the ground conductor 6 is disposed in the conductor accommodation space 6S. As Figure 7 shown, the raw material gas G1 supplied from the outside is supplied to a raw material gas flow-through space provided on the lower surface and side surface of the ground conductor 6 disposed in the conductor accommodation space 6S via a gas flow path 21 provided in the housing bottom 1a.

[0106] The electrode unit 51(50) includes a high-voltage side electrode forming portion E1 as a first electrode forming portion, and a ground side electrode forming portion E2 as a second electrode forming portion provided below the high-voltage side electrode forming portion E1.

[0107] The electrode unit 51 further includes a ground conductor 6 as a reference potential conductor, which is provided below the ground side electrode forming portion E2 as a second electrode forming portion and is accommodated in the conductor accommodation space 6S. The ground conductor 6 is made of a conductive material such as metal.

[0108] The high-voltage side electrode forming portion E1 as a first electrode forming portion includes a high-voltage side dielectric film 2 as a first electrode dielectric film, and a power supply body 5 as a first electrode conductive film formed on the upper surface of the high-voltage side dielectric film 2. In addition, the power supply body 5 as a first electrode conductive film is disposed on a power supply body disposition recess 28, and the power supply body disposition recess 28 is provided at the center of the high-voltage side dielectric film 2 as a first electrode dielectric film.

[0109] The high-voltage side dielectric film 2 is made of a dielectric material, and the power supply body 5 is made of a conductive material such as metal. For example, the power supply body 5 is made of metal.

[0110] The ground side electrode forming portion E2 includes a ground side dielectric film 3 as a second electrode dielectric film, and a conductive film 7 as a second electrode conductive film formed on the lower surface of the ground side dielectric film 3. In addition, since the film thickness of the conductive film 7 is thin, it is omitted from the illustration in Figure 2 etc., and the formation region of the conductive film 7 is shown in Fig. 20 and Fig.21 .

[0111] The ground-side dielectric film 3 is made of a dielectric material, and the conductive film 7 is made of a conductive material such as a metal.

[0112] The ground conductor 6 as a reference potential conductor has a non-penetrating buffer space 68 for active gas at the upper part, and the ground-side electrode forming portion E2 is disposed to block the buffer space 68 for active gas. Therefore, outside the buffer space 68 for active gas, the lower surface of the conductive film 7 is in contact with the upper surface of the ground conductor 6.

[0113] In the region where the ground-side dielectric film 3 as the second electrode dielectric film overlaps with the buffer space 68 for active gas in a plan view, there is a dielectric through-hole 3h penetrating the ground-side dielectric film 3, and in the region where the conductive film 7 as the second electrode conductive film overlaps with the buffer space 68 for active gas in a plan view, there is a conductive film opening 7h, and the conductive film opening 7h overlaps with the dielectric through-hole 3h in a plan view.

[0114] The bottom portion 1a of the housing 1 has a gas flow path 21 for receiving the source gas G1 from the outside, and a source gas flow-through space is provided between the ground conductor 6 and the conductor accommodation space 6S of the housing 1. As will be described later, the source gas flow-through space includes a source gas buffer space 61, a slit space 62, and a side space 63.

[0115] The source gas G1 is guided to the main discharge space of the discharge space 4 via the gas flow path 21 and the above-mentioned source gas flow-through space. In addition, as will be described later, the main discharge space refers to the discharge space 4 in the dielectric space 18 between the high-voltage side dielectric film 2 and the ground-side dielectric film 3.

[0116] The AC voltage applied from the AC power supply 15 is applied to the power supply body 5 as the first electrode conductive film via electrical connection mechanisms such as electrical wirings and lead-in terminals. In addition, in Figure 2 etc., the illustration of the electrical connection mechanism is omitted.

[0117] On the other hand, the housing 1 is set to the ground potential as the reference potential. Therefore, via the housing 1 and the ground conductor 6, the conductive film 7 as the second electrode conductive film is set to the ground potential.

[0118] The electrode unit 51(50) further includes auxiliary members such as a dielectric film support member 10, a dielectric film pressing member 11, and a pressing member 12.

[0119] (Fixing of the high-voltage side dielectric film 2)

[0120] The stepped portion 102 of the dielectric film support member 10 has an upper surface that is disposed on the flat surface 1F of the housing 1 and serves as a support surface 10F that supports the high-voltage side dielectric film 2 from below. At this time, the dielectric film support member 10 is disposed on the flat surface 1F such that the side surface of the dielectric film support member 10 coincides with the side surface of the conductor accommodation space 6S of the housing bottom 1a of the housing 1.

[0121] The dielectric film pressing member 11 is a member for pressing the high-voltage side dielectric film 2 from above and does not overlap with the power supply body 5 in a plan view. That is, there is an exposed area EX2 on the upper surface of the high-voltage side dielectric film 2 where neither the dielectric film pressing member 11 nor the power supply body 5 is formed.

[0122] As Figure 6 , Fig. 27 and Fig.28 shown, the lower surface of the dielectric film pressing member 11 has a dielectric contact area 112 that contacts the upper surface of the high-voltage side dielectric film 2 and a dielectric non-contact area 111 that does not contact the upper surface of the high-voltage side dielectric film 2. The dielectric contact area 112 becomes an area where a load is applied in contact with the high-voltage side dielectric film 2, and the dielectric non-contact area 111 becomes an area that does not have a contact relationship with the high-voltage side dielectric film 2 and extends toward the power supply body 5 on the upper surface of the high-voltage side dielectric film 2.

[0123] The dielectric contact area 112 overlaps with the peripheral area of the high-voltage side dielectric film 2 and the support surface 10F of the dielectric film support member 10 in a plan view, and the dielectric non-contact area 111 overlaps with an intermediate area closer to the inside than the peripheral area of the high-voltage side dielectric film 2. That is, the intermediate area becomes an area adjacent to the power supply body 5 side from the peripheral area of the high-voltage side dielectric film 2.

[0124] The dielectric film pressing member 11 is made of metal or the like and has conductivity, and is set to the ground potential as a reference potential via the housing 1, the mounting bolt 31, and the pressing member 12. The mounting bolt 31 and the pressing member 12 also have conductivity.

[0125] Therefore, the high-voltage side dielectric film 2 is pressed from above by the dielectric film pressing member 11 in the dielectric contact area 112. Hereinafter, the combined structure of the dielectric film support member 10, the dielectric film pressing member 11, and the pressing member 12 will be described in detail.

[0126] As Figure 2 shown, the pressing member 12 is disposed on the upper surface of the dielectric film support member 10, and the pressing member 12 and the dielectric film support member 10 are fixed to the housing bottom 1a of the housing 1 by the mounting bolt 31.

[0127] As Fig.24 and Fig.25As shown, the dielectric film support member 10 is circular in plan view with a central opening 100 in the center. A stepped structure composed of a stepped portion 102 and the upper surface 101 of the peripheral portion is provided in a circular ring shape around the central opening 100. The upper surface of the stepped portion 102 serves as the support surface 10F. A plurality of through-holes 10h are discretely provided in a circular shape on the upper surface 101 of the peripheral portion on the outer peripheral side of the stepped portion 102 (support surface 10F).

[0128] On the other hand, as Fig. 9 and Fig.10 shown, the high-voltage side dielectric film 2 is circular in plan view with a power supply body arrangement recess 28 in the center. A peripheral surface area 27 is provided in a circular ring shape around the power supply body arrangement recess 28. In addition, the high-voltage side dielectric film 2 has a concave bottom surface 26 that is circular in plan view, and the bottom surface of the periphery of the concave bottom surface 26 becomes a convex bottom surface 23 that is circular in plan view.

[0129] As Fig.13 and Fig.14 shown, the power supply body 5 has a cylindrical shape. The power supply body 5 is arranged on the upper surface of the high-voltage side dielectric film 2 such that the bottom surface of the power supply body 5 is located on the power supply body arrangement recess 28 of the high-voltage side dielectric film 2.

[0130] An AC voltage is applied to the power supply body 5, which is a conductive film for the first electrode, from an AC power supply 15. In addition, as Figure 5 shown, the power supply body arrangement recess 28 includes the power supply body 5 in plan view and has a planar shape slightly larger than that of the power supply body 5.

[0131] The high-voltage side dielectric film 2 is arranged on the dielectric film support member 10 such that the support surface 10F of the dielectric film support member 10 contacts the convex bottom surface 23 of the high-voltage side dielectric film 2. The high-voltage side dielectric film 2 contacts the dielectric film support member 10 via a sealing material such as an O-ring (not shown).

[0132] In addition, as Fig.26 and Fig. 27 shown, the dielectric film pressing member 11 is circular in plan view with a central opening 110 in the center. The circular lower surface area provided on the outer peripheral side of the central opening 110 becomes a dielectric non-contact area 111, and the circular lower surface area provided on the outer peripheral side of the dielectric non-contact area 111 becomes a dielectric contact area 112.

[0133] As Fig.28As shown, the dielectric contact region 112 protrudes downward (-Z direction) compared to the dielectric non-contact region 111 and has a contact relationship with the upper surface U2 of the high-voltage side dielectric film 2. On the other hand, there is a gap SP11 between the dielectric non-contact region 111 and the upper surface U2 of the high-voltage side dielectric film 2, so it does not contact the upper surface U2 of the high-voltage side dielectric film 2.

[0134] As Fig.29 and Fig.30 shown, the pressing member 12 is circular in plan view with a central opening 120 in the center. In the outer peripheral region 125 on the outer peripheral side of the central opening 120, a plurality of inner through-holes 121h are discretely arranged in a circular shape, and on the outer peripheral side of the plurality of inner through-holes 121h, a plurality of outer through-holes 122h are discretely arranged in a circular shape.

[0135] Thus, a plurality of inner through-holes 121h and a plurality of outer through-holes 122h are provided in the outer peripheral region 125 of the pressing member 12. In addition, the plurality of inner through-holes 121h each serve as a through-hole for tapping.

[0136] A part of the outer peripheral region 125 of the pressing member 12 having the above structure is placed on the dielectric film support member 10, and the dielectric film support member 10 and the pressing member 12 are fixed to the bottom 1a of the housing 1 by a plurality of mounting bolts 31. The threaded portions of the plurality of mounting bolts 31 pass through the plurality of outer through-holes 122h and the plurality of through-holes 10h and are mounted on the bottom 1a of the housing.

[0137] As Figure 2 to Figure 6 shown, the pressing member 12 is disposed in a region that overlaps the dielectric film support member 10 and the dielectric film pressing member 11 in plan view.

[0138] On the other hand, a plurality of pressing auxiliary members 32 are mounted on the pressing member 12 so as to pass through the plurality of inner through-holes 121h of the pressing member 12. As the pressing auxiliary members 32, bolts, fixing screws, etc. can be considered. The plurality of pressing auxiliary members 32 are mounted in the plurality of inner through-holes 121h in such a way that the dielectric film pressing member 11 is pressed by the plurality of pressing auxiliary members 32. The plurality of pressing auxiliary members 32 are disposed at positions that overlap the dielectric contact region 112 of the dielectric film pressing member 11 and the bottom surface 23 of the convex portion of the high-voltage side dielectric film 2 in plan view.

[0139] Therefore, the dielectric film pressing member 11 that receives the pressing force of the plurality of pressing auxiliary members 32 presses the high-voltage side dielectric film 2 from the upper dielectric contact region 112.

[0140] As described above, in the electrode unit 50 of the active gas generation device 71 of the first embodiment, the high-voltage side dielectric film 2 serving as the dielectric film for the first electrode is pressed from above the dielectric contact region 112 by the dielectric pressing member 11 that receives the pressing force of the plurality of pressing assist members 32. Therefore, the region where the load is applied to the high-voltage side dielectric film 2 by the dielectric pressing member 11 can be limited to only the region below the dielectric contact region 112.

[0141] As a result, the active gas generation device 71 of the first embodiment can stably fix the high-voltage side dielectric film 2 between the dielectric contact region 112 of the dielectric pressing member 11 and the support surface 10F of the dielectric support member 10 without applying unnecessary bending stress to the high-voltage side dielectric film 2.

[0142] The dielectric pressing member 11 is set to the ground potential as the reference potential and has conductivity. The dielectric non-contact region 111 of the dielectric pressing member 11 overlaps with the intermediate region of the high-voltage side dielectric film 2 in a plan view.

[0143] Therefore, the electrode unit 50 can reduce the electric field strength of the power supply body 5 through the dielectric pressing member 11 having the dielectric non-contact region 111 and lower the potential of the intermediate region of the high-voltage side dielectric film 2. Thus, the potential in the outer diameter direction between the high-voltage side dielectric film 2 and the ground side dielectric film 3 can be reduced.

[0144] As a result, the electrode unit 50 in the active gas generation device 71 of the first embodiment can reliably prevent dielectric breakdown in the gap 20 between the high-voltage side dielectric film 2 and the dielectric support member 10.

[0145] (Ground conductor 6)

[0146] As Figure 15 to Figure 17 shown, the ground conductor 6 housed in the conductor housing space 6S of the housing 1 is circular in a plan view and has a raw material gas buffer space 61 and a slit space 62 in the end region of the bottom surface.

[0147] The raw material gas buffer space 61 is formed in an annular shape in a plan view. As Figure 2 shown, it is connected to the gas flow path 21 and can take in the raw material gas G1 supplied from the outside into the raw material gas buffer space 61 via the gas flow path 21.

[0148] A plurality of slit spaces 62 are discretely provided around the raw material gas buffer space 61. As Fig.17 shown, the plurality of slit spaces 62 are respectively connected to the raw material gas buffer space 61 and can allow the raw material gas G1 to flow from the raw material gas buffer space 61 to the slit spaces 62.

[0149] As Figure 6and Fig.17 As shown, the side space 63 is a clearance space between the inner peripheral side surface of the conductor accommodation space 6S and the outer peripheral side surface of the ground conductor 6, and is set in an annular shape in a plan view.

[0150] The dielectric film support member 10 and the ground conductor 6 have Figure 3 and Figure 4 the positional relationship as shown, so that the source gas G1 after passing through the side space 63 is supplied to the lower side surface region R10 of the dielectric film support member 10.

[0151] Thus, the source gas buffer space 61 is provided on the lower surface side of the ground conductor 6 and receives the source gas G1 via the gas flow path 21. A plurality of slit spaces 62 are respectively provided on the lower surface side of the ground conductor 6 and are connected to the source gas buffer space 61.

[0152] The side space 63 is provided on the side surface of the ground conductor 6 and is connected to the plurality of slit spaces 62. As described above, the source gas flow-through space includes the source gas buffer space 61, the plurality of slit spaces 62, and the side space 63.

[0153] Therefore, the source gas G1 supplied from the outside to the gas flow path 21 is guided to the discharge space 4 via the source gas buffer space 61, the slit space 62, and the side space 63.

[0154] Each of the plurality of slit spaces 62 is set to be a narrower space in which the source gas is less likely to flow compared to the source gas buffer space 61, so that the source gas G1 flows into each of the plurality of slit spaces 62 after temporarily staying in the source gas buffer space 61. That is, the conductivity, which is a coefficient indicating the ease of flow of the source gas G1, is reduced in the plurality of slit spaces 62 compared to the source gas buffer space 61 and the side space 63.

[0155] As a result, the active gas generation device 71 of the first embodiment can supply the source gas G1 to the discharge space 4 in a spatially uniform manner. That is, the source gas G1 can be uniformly supplied from the peripheral portion of the dielectric space 18, which is circular in a plan view, toward the central discharge space 4.

[0156] By reducing the conductivity of the slit space 62, the differential pressure between the source gas buffer space 61 and the side space 63 becomes larger, and the flow rate deviation of the source gas G1 flowing in each of the plurality of slit spaces 62 is reduced. Therefore, the source gas G1 is uniformly supplied to the discharge space 4. In addition, the flow rate of the source gas G1 is adjusted, for example, by a mass flow controller (MFC) provided upstream of the gas flow path 21.

[0157] Therefore, in a general active gas generation device, if the raw material gas G1 is not supplied evenly, the time that the raw material gas G1 passes through the discharge space 4 changes, and as a result, the generation efficiency of the active gas G2 deteriorates. The active gas generation device 71 of Embodiment 1 can supply the raw material gas G1 evenly, so the above-mentioned problem does not occur.

[0158] (Ground-side electrode forming portion E2 and buffer space 68 for active gas)

[0159] As described above, the ground-side electrode forming portion E2 as the second electrode forming portion includes a ground-side dielectric film 3 and a conductive film 7.

[0160] As Fig.11 and Fig.12 shown, the ground-side dielectric film 3 is circular in plan view and has a circular dielectric through-hole 3h in the center.

[0161] As Fig.18 and Fig.19 shown, the cover dielectric film 8 is circular in plan view and has a circular cover through-hole 8h in the center. In addition, the cover dielectric film 8 is preferably made of the same constituent material as the ground-side dielectric film 3. The reason is to prevent strain from occurring when the coefficient of thermal expansion between the cover dielectric film 8 and the ground-side dielectric film 3 is different. In addition, materials with similar coefficients of thermal expansion can also be selected for the cover dielectric film 8 and the ground-side dielectric film 3 respectively.

[0162] As Fig. 20 and Fig.21 shown, the conductive film 7 is circular in plan view and has a circular conductive film opening 7h in the center in plan view.

[0163] The dielectric through-hole 3h and the conductive film opening 7h overlap the buffer space 68 for active gas in plan view respectively. As Fig.21 shown, the conductive film opening 7h includes the dielectric through-hole 3h in plan view and has a shape larger than the dielectric through-hole 3h.

[0164] The conductive film 7 is disposed on the lower surface of the ground-side dielectric film 3 such that the center positions of the ground-side dielectric film 3 and the conductive film 7 coincide. The diameter of the conductive film 7 is set to be approximately the same as the diameter of the ground-side dielectric film 3. Corresponding to the circular conductive film opening 7h larger than the dielectric through-hole 3h provided in the center, the formation area of the conductive film 7 is smaller than the formation area of the ground-side dielectric film 3.

[0165] The inner conductive film boundary 7e of the circumferential outer peripheral line of the conductive film opening 7h serves as the end portion on the dielectric through-hole 3h side of the conductive film 7. The conductive film 7 is not formed in the area inside the inner conductive film boundary 7e. The inner conductive film boundary 7e serves as the electrode boundary line of the conductive film 7. Thus, as Fig.21 shown, the formation region A7 of the conductive film 7 on the lower surface of the ground-side dielectric film 3 is the region from the outer peripheral position of the ground-side dielectric film 3 to the inner conductive film boundary 7e.

[0166] As Fig. 20 and Fig.21 shown, the cover dielectric film 8 is provided in a circular shape starting from the lower surface of the ground-side dielectric film 3, including the inner conductive film boundary 7e, and reaching the lower surface of the conductive film 7. However, the cover dielectric film 8 has a cover through-hole 8h at the center. That is, the outer diameter of the conductive film opening 7h of the conductive film 7 has a size relationship shorter than the outer diameter of the cover dielectric film 8.

[0167] The cover through-hole 8h has a shape similar to that of the dielectric through-hole 3h. The cover through-hole 8h is included in the conductive film opening 7h and has a smaller shape than the conductive film opening 7h. Thus, the cover dielectric film 8 covers the inner conductive film boundary 7e (electrode boundary line) of the conductive film 7. Then, the lower surface of the conductive film 7 not covered by the cover dielectric film 8 has a contact relationship with the upper surface of the ground conductor 6.

[0168] As Fig.15 and Fig.16 shown, the active gas buffer space 68 provided above the ground conductor 6 is circular in plan view, and a plurality of gas ejection ports 69 are provided on the periphery of the bottom surface 65 of the active gas buffer space 68.

[0169] In Fig.15 and Fig.16 the formation region of the cover dielectric film 8 is also shown together. As shown in these figures, the outer peripheral line of the cover dielectric film 8 is substantially the same as the outer peripheral line of the active gas buffer space 68.

[0170] As Figure 2 and Fig.16 shown, a shielding dielectric film 9 is provided on the bottom surface 65 of the active gas buffer space 68.

[0171] As Fig. 22 and Fig.23 shown, the shielding dielectric film 9 has a prescribed film thickness and is formed in a circular shape in plan view.

[0172] The shielding dielectric film 9 is provided on the bottom surface 65 of the active gas buffer space 68 such that the central positions of the active gas buffer space 68 and the shielding dielectric film 9 coincide with each other.

[0173] As Fig.15 and Fig.16 shown, a plurality of gas ejection ports 69 overlap the cover dielectric film 8 in a plan view and do not overlap the dielectric through-hole 3h and the cover through-hole 8h in a plan view.

[0174] As Fig.16 shown, a plurality of gas ejection ports 69 are provided through the ground conductor 6 around the bottom surface 65 of the buffer space 68 for the active gas. That is, a plurality of gas ejection ports 69 are provided in the peripheral region of the shielding dielectric film 9 in a plan view.

[0175] In the active gas generation device 71 of the first embodiment having such a configuration, as described above, the source gas G1 is supplied from the outside of the metal casing 1 to the discharge space 4 via the gas flow path 21 and the flow-through space for the source gas.

[0176] If the discharge space 4 where dielectric barrier discharge is being generated is supplied with the source gas G1, the source gas G1 is activated to become the active gas G2, passes through the dielectric through-hole 3h and the cover through-hole 8h, and is introduced into the buffer space 68 for the active gas. The active gas G2 that has entered the buffer space 68 for the active gas passes through the plurality of gas ejection ports 69 provided on the bottom surface of the buffer space 68 for the active gas and is supplied to the subsequent processing space.

[0177] In the active gas generation device 71 of the first embodiment having such a configuration, the main dielectric space where the high-voltage side dielectric film 2 as the first electrode dielectric film and the ground side dielectric film 3 as the second electrode dielectric film face each other becomes the dielectric space 18. The dielectric space 18 is circular in a plan view. In addition, the space where the high-voltage side dielectric film 2 faces the shielding dielectric film 9 is defined as the auxiliary dielectric space. The discharge space 4 includes the main discharge space where the power supply body 5 and the conductive film 7 overlap in the dielectric space 18 in a plan view.

[0178] In order to form the above-described main discharge space, the high-voltage side dielectric film 2 and the ground side dielectric film 3 are provided corresponding to each other so as to be at a certain distance in the height direction (Z direction), and the above-described main discharge space of the discharge space 4 exists in the dielectric space 18 between the high-voltage side dielectric film 2 and the ground side dielectric film 3.

[0179] The discharge space 4 further includes an auxiliary discharge space 44 formed by the dielectric through-hole 3h, the cover through-hole 8h, and a part of the buffer space 68 for the active gas on the shielding dielectric film 9 in the above-described auxiliary dielectric space.

[0180] In the ground conductor 6, by using the bottom surface region under the bottom surface 65 as a conductive film for a ground electrode set to the ground potential and applying a discharge voltage between the power supply body 5 receiving an AC voltage from the AC power supply 15 and the conductive film for the ground electrode, an auxiliary discharge space 44 can be generated accordingly.

[0181] As described above, the auxiliary discharge space 44 includes a dielectric through-hole 3h, a cover through-hole 8h, and a part of the buffer space 68 for the active gas. Thus, the discharge space 4 formed in the first embodiment includes the main discharge space in the dielectric space 18 and the auxiliary discharge space 44.

[0182] In the active gas generation device 71 of the first embodiment, the paths from the auxiliary discharge space 44 to the respective gas ejection ports 69 are defined as active gas flow paths.

[0183] In the active gas generation device 71 of the first embodiment, since the auxiliary discharge space 44, which is a part of the discharge space 4, includes a dielectric through-hole 3h, a cover through-hole 8h, and a part of the buffer space 68 for the active gas, the active gas flow path from the auxiliary discharge space 44 to the plurality of gas ejection ports 69 can be suppressed to the minimum required volume, thereby suppressing the loss of the active gas G2.

[0184] Moreover, the cover dielectric film 8 in the ground-side electrode forming portion E2 of the electrode unit 50 covers the electrode boundary line of the conductive film 7, that is, the inner boundary 7e of the conductive film, in the buffer space 68 for the active gas and overlaps with the plurality of gas ejection ports 69 in a top view, so that the surface inactivation phenomenon in which the active gas G2 disappears due to the collision of the active gas G2 with the conductive film 7 can be suppressed.

[0185] As a result, the active gas generation device 71 of the first embodiment can supply a high-concentration active gas G2 from the plurality of gas ejection ports 69 to the subsequent processing space.

[0186] The electrode unit 50 of the first embodiment has the above-described configuration, and thus the portion facing the discharge space 4 is only a member (the high-voltage side dielectric film 2, the ground-side dielectric film 3, the cover dielectric film 8, and the shielding dielectric film 9) made of a dielectric as an insulator. When a metal material faces the discharge, it is easily ionized, contains metal ions in the gas, and becomes a cause of contamination by mixing.

[0187] (Housing opening 41)

[0188] As Figure 2 shown, the housing bottom 1a of the housing 1 has a housing opening 41. The housing opening 41 is provided in a region that overlaps with the buffer space 68 for the active gas in a top view and penetrates the housing bottom 1a.

[0189] Therefore, the active gas G2 ejected from the multiple gas ejection ports 69 is guided to the lower processing space via the housing opening 41.

[0190] As Figure 2 shown, the housing opening 41 provided at the bottom 1a of the housing has a tapered shape in which the opening area becomes larger as it faces downward and has a lowermost outer peripheral edge 41L as Figure 2 and Figure 7 shown.

[0191] In the active gas generation device 71 of Embodiment 1, the housing opening 41 provided at the bottom 1a of the housing 1 has a tapered shape in which the opening area becomes larger as it faces downward.

[0192] Therefore, the active gas generation device 71 of Embodiment 1 can minimize the loss caused by the collision of the active gas G2 ejected from the multiple gas ejection ports 69 with the bottom 1a of the housing, and can supply the high-concentration active gas G2 to the lower processing space.

[0193] <Embodiment 2>

[0194] (Problem of Embodiment 1)

[0195] In the active gas generation device 71 of Embodiment 1 described above, the active gas G2 is supplied from the active gas buffer space 68 via the multiple gas ejection ports 69 to the subsequent processing space existing below. Hereinafter, the active gas G2 from the multiple gas ejection ports 69 will be defined as multiple local active gases for explanation.

[0196] Fig.31 is an explanatory diagram schematically showing the ejection mode of the active gas G2 of the electrode unit 50 (51 to 53) in the active gas generation device 71 of Embodiment 1. Fig.32 is an explanatory diagram schematically showing the ideal ejection mode of the active gas G2 in the electrode unit 50. Fig.31 And Fig.32 For example, it corresponds to Figure 1 the A-A cross section. In Fig.31 And Fig.32 the XYZ orthogonal coordinate system is described respectively.

[0197] As Fig.31 shown, in the electrode unit 50 (51 to 53) included in the active gas generation device 71 of Embodiment 1, the multiple gas ejection ports 69 are arranged so as to be away from each other as they face downward, so that no collision occurs between the multiple local active gases.

[0198] However, when the space pressure p0 of the buffer space 68 for the active gas differs significantly from the space pressure p1 of the subsequent processing space, for example, when {(p1 / p0) < 0.5}, the multiple local active gases ejected from the multiple gas ejection ports 69 are as shown in Fig.31 the gas flow FGX, and become a flow in only one direction called choking flow, and the multiple local active gases do not diffuse respectively and advance linearly.

[0199] The active gas generation device 71 of Embodiment 1 has the following structure: In order to supply a uniform active gas G2 to the subsequent processing space, multiple gas ejection ports 69 are provided for each electrode unit 50, and in order to supply the active gas G2 to a processing space having a relatively large area, multiple electrode units 50 are provided as electrode units 51 to 53.

[0200] However, the multiple local active gases ejected from each electrode unit 50 are respectively in accordance with Fig.31 the linear gas flow FGX shown and are supplied to the processing space, and do not become Fig.32 the gas flow FGY that diffuses in multiple directions shown.

[0201] Thus, the local active gases ejected from the multiple gas ejection ports 69 of the electrode unit 50 basically have only one directionality. Therefore, the active gas generation device 71 of Embodiment 1 has a problem that it cannot supply a uniform active gas G2 to the processing space.

[0202] In the active gas generation device 75 of Embodiment 2 described below, the purpose is to supply a uniform active gas G2.

[0203] (Structure of Embodiment 2)

[0204] Fig.33 It is an explanatory diagram showing the cross-sectional structure of the electrode unit 55 in the active gas generation device 75 of Embodiment 2. An XYZ orthogonal coordinate system is shown in this figure.

[0205] The overall configuration of the active gas generation device 75 is the same as the Figure 1 active gas generation device 71 shown. Thus, Fig.33 the electrode unit 55 shown corresponds to one of the electrode units 51 to 53 in the active gas generation device 75 with the overall configuration shown in Figure 1 the figure.

[0206] That is, the active gas generation device 75 of Embodiment 2 is the same as the active gas generation device 71 of Embodiment 1, and includes electrode units 51 to 53 as multiple electrode units, and a space S1 in the housing (refer to Figure 8A housing 1 that houses the electrode units 51 to 53 and has conductivity.

[0207] The electrode unit 55 of Embodiment 2 is characterized in that the ground conductor 6 of the electrode unit 50 of Embodiment 1 is replaced with a ground conductor 60.

[0208] Hereinafter, the same components as those of the electrode unit 50 of Embodiment 1 are denoted by the same reference numerals, and the description will be centered on the characteristic parts of the electrode unit 55 of Embodiment 2.

[0209] As Fig.33 shown, the electrode unit 55 includes a ground conductor 60 as a reference potential conductor. The ground conductor 60 is disposed below the ground-side electrode forming portion E2 including the ground-side dielectric film 3 and is housed in the conductor housing space 6S. The ground conductor 60 is made of a conductive material such as metal.

[0210] The electrode unit 55 of Embodiment 2 is housed in the inner space S1 of the housing 1 in such a manner that the ground conductor 60 is disposed in the conductor housing space 6S. The raw material gas G1 supplied from the outside passes through the gas flow path 21 provided in the bottom 1a of the housing and is supplied to the raw material gas flow-through space provided on the lower surface and side surface of the ground conductor 60 disposed in the conductor housing space 6S.

[0211] (Ground conductor 60)

[0212] Fig.34 And Fig.35 are explanatory views schematically showing the structure of the ground conductor 60. Fig.34 Shows the planar structure of the ground conductor 60, Fig.35 shows the cross-sectional structure of the ground conductor 60. In Fig.34 And Fig.35 the XYZ orthogonal coordinate system is respectively described.

[0213] The ground conductor 60 as a reference potential conductor has a non-penetrating buffer space 68 for active gas at the upper part, and the ground-side electrode forming portion E2 including the ground-side dielectric film 3 is disposed so as to block the buffer space 68 for active gas. Therefore, outside the buffer space 68 for active gas, the lower surface of the conductive film 7 is in contact with the upper surface of the ground conductor 60.

[0214] Similar to Embodiment 1, the housing 1 is set to a ground potential as a reference potential. Therefore, the conductive film 7 is set to a ground potential via the housing 1 and the ground conductor 60.

[0215] As Fig.34As shown, the ground conductor 60 housed in the conductor housing space 6S of the housing 1 is circular in plan view, and has a raw material gas buffer space 61 and a slit space 62 in the end region of the bottom surface.

[0216] Similar to the ground conductor 6 of Embodiment 1, a flow space for the raw material gas including the raw material gas buffer space 61, a plurality of slit spaces 62, and a side space 63 is provided for the ground conductor 60.

[0217] Therefore, the raw material gas G1 supplied from the outside to the gas flow path 21 is guided to the discharge space 4 via the raw material gas buffer space 61, the slit space 62, and the side space 63.

[0218] Therefore, the active gas generation device 75 of Embodiment 2 is the same as the active gas generation device 71 of Embodiment 1, and can supply the raw material gas G1 to the discharge space 4 uniformly in space.

[0219] As Fig.34 and Fig.35 shown, the buffer space 68 for the active gas provided above the ground conductor 60 is circular in plan view, and a plurality of gas ejection ports 70 are provided on the periphery of the bottom surface 65 of the buffer space 68 for the active gas.

[0220] Similar to the plurality of gas ejection ports 69 of Embodiment 1, the plurality of gas ejection ports 70 overlap with the cover dielectric film 8 in plan view, and do not overlap with the dielectric through-hole 3h and the cover through-hole 8h in plan view.

[0221] As Figure 33 to Figure 35 shown, a plurality of gas ejection ports 70 are provided through the ground conductor 60 on the periphery of the bottom surface 65 of the buffer space 68 for the active gas. That is, a plurality of gas ejection ports 70 are provided in the peripheral region of the shielding dielectric film 9 in plan view.

[0222] When the raw material gas G1 is supplied to the discharge space 4 where dielectric barrier discharge is occurring, the raw material gas G1 is activated to become the active gas G2, and is introduced into the buffer space 68 for the active gas through the dielectric through-hole 3h and the cover through-hole 8h. The active gas G2 entering the buffer space 68 for the active gas is supplied to the subsequent processing space through a plurality of gas ejection ports 70 provided on the bottom surface of the buffer space 68 for the active gas.

[0223] In the active gas generation device 75 of Embodiment 2, the paths from the auxiliary discharge space 44 to the respective gas ejection ports 70 are defined as active gas flow paths.

[0224] In the active gas generation device 75 of Embodiment 2, the auxiliary discharge space 44 which is a part of the discharge space 4 includes the dielectric through-hole 3h, the cover through-hole 8h, and a part of the buffer space 68 for the active gas. Therefore, the active gas flow path from the auxiliary discharge space 44 to the plurality of gas ejection ports 70 can be suppressed to the minimum required volume, and the loss of the active gas G2 can be suppressed.

[0225] Moreover, the cover dielectric film 8 in the ground-side electrode forming portion E2 of the electrode unit 55 covers the electrode boundary line of the conductive film 7, that is, the inner boundary 7e of the conductive film, within the buffer space 68 for the active gas, and overlaps with the plurality of gas ejection ports 70 in a plan view. Therefore, the surface inactivation phenomenon in which the active gas G2 disappears as the active gas G2 collides with the conductive film 7 can be suppressed.

[0226] As a result, similar to Embodiment 1, the active gas generation device 75 of Embodiment 2 can supply the high-concentration active gas G2 from the plurality of gas ejection ports 70 to the subsequent processing space.

[0227] The housing bottom 1a of the housing 1 has a housing opening 41 in a region that overlaps with the buffer space 68 for the active gas in a plan view. The active gas G2 ejected from the plurality of gas ejection ports 70 is guided downward to the processing space via the housing opening 41.

[0228] In the active gas generation device 75 of Embodiment 2, the housing opening 41 provided in the housing bottom 1a of the housing 1 has a conical shape in which the opening area becomes larger as it faces downward.

[0229] Therefore, similar to Embodiment 1, the active gas generation device 75 of Embodiment 2 can suppress the loss caused by the collision of the active gas G2 ejected from the plurality of gas ejection ports 70 with the housing bottom 1a, and can supply the relatively high-concentration active gas G2 to the processing space below.

[0230] (Plurality of gas ejection ports 70)

[0231] The active gas G2 ejected from the plurality of gas ejection ports 70 provided in the electrode unit 55 of Embodiment 2 is supplied to the subsequent processing space existing below. Here, the active gas ejected from the plurality of gas ejection ports 70 is defined as a plurality of local active gases.

[0232] In the electrode unit 55 of Embodiment 2, the plurality of local active gases ejected from the plurality of gas ejection ports 70 are guided downward via the housing opening 41.

[0233] Fig.36 And Fig.37 is an explanatory diagram schematically showing the cross-sectional structure of the plurality of gas ejection ports 70. Fig.36 and Fig.37 respectively correspond to Fig.34 the D - D cross-sectional structure. In Fig.36 and Fig.37 the XYZ orthogonal coordinate system is respectively described.

[0234] As Fig.36 and Fig.37 shown, the housing opening 41 includes an upper region 41a with a constant opening area in the height direction (Z direction), and a conical region, i.e., a lower conical region 41t, with an increasing opening area towards the lower part. In the housing opening 41, the lower conical region 41t is a conical region arranged lower than the upper region 41a.

[0235] In Fig.37 the coordinate position slightly lower than the center position of the boundary line between the upper region 41a and the lower conical region 41t is represented as the collision point P80. The collision point P80 exists within the collision region 80 described later and becomes the center of the collision region 80.

[0236] In the electrode unit 55 of Embodiment 1, a plurality of gas ejection ports 70 are arranged so as to approach each other towards the lower part, so that a plurality of local active gases collide at the collision point P80.

[0237] Hereinafter, the structure of the plurality of gas ejection ports 70 will be described in detail. In Fig.36 and Fig.37 two gas ejection ports 70 are illustrated, but as Fig.34 shown, the number of the plurality of gas ejection ports 70 is set to be "3" or more.

[0238] Hereinafter, among the two gas ejection ports 70 illustrated in each of Fig.36 and Fig.37 the gas ejection port 70 on the right side (+X direction side) in the figure is marked as the gas ejection port 70(1), and the gas ejection port 70 on the left side (-X direction side) in the figure is marked as the gas ejection port 70(2).

[0239] As described above, the plurality of gas ejection ports 70 are arranged in a circular and discrete manner in a top view. Hereinafter, the circular virtual line connecting the centers of the plurality of gas ejection ports 70 is referred to as the "virtual gas ejection port circle".

[0240] The gas ejection ports 70(1) and 70(2) correspond to a pair of gas ejection ports 70, 70 opposed to each other in the diameter direction on the above-mentioned virtual gas ejection port circle. Here, the local active gas ejected from the gas ejection port 70(1) is marked as the local active gas g2(1), and the local active gas ejected from the gas ejection port 70(2) is marked as the local active gas g2(2).

[0241] The gas ejection port 70(1) has a constant ejection port inclination A71 that exceeds "0" and is less than 90° with respect to the horizontal direction (X direction) as the reference direction. The ejection port inclination A71 is set such that the locally active gas g2(1) ejected from the gas ejection port 70(1) is directed toward the collision point P80.

[0242] Similar to the gas ejection port 70(1), the gas ejection port 70(2) has a constant ejection port inclination A72 that exceeds "0" and is less than 90° with respect to the horizontal direction. The ejection port inclination A72 is set such that the locally active gas g2(2) ejected from the gas ejection port 70(2) is directed toward the collision point P80.

[0243] The ejection port inclinations A71 and A72 are the same angle as each other and are set to, for example, 45°.

[0244] The remaining film thickness T6 of the ground conductor 60 under the buffer space 68 for the active gas where the gas ejection ports 70(1) and 70(2) are provided is set to, for example, 3 mm. The formation interval R70 between the center positions of the uppermost gas ejection ports 70(1) and 70(2) is set to, for example, 16.4 mm. The formation interval R70 is the same as the length of the diameter Φ of the virtual gas ejection port circle.

[0245] On the other hand, the overall depth DTA of the housing opening 41 along the Z direction is set to, for example, 18.5 mm, and the upper depth DT1 of the upper region 41a in the housing opening 41 along the Z direction is set to, for example, 5.0 mm.

[0246] In addition, the side surface of the lower conical region 41t of the housing opening 41 that forms a conical region extends in a conical shape along the conical inclination A41. The conical inclination A41 is set to, for example, 45°.

[0247] In the ground conductor 60 having the above-described configuration, when the locally active gases g2(1) and g2(2) are ejected from the gas ejection ports 70(1) and 70(2), the locally active gas g2(1) collides with the locally active gas g2(2) at the collision point P80. As Fig.37 shown, the formation depth from the surface of the ground conductor 60 of the collision point P80 becomes the collision depth DTX.

[0248] In addition, even if the total number of the gas ejection ports 70 is three or more, by arranging each gas ejection port 70 along a virtual gas ejection port circle having the formation interval R70 as the diameter and setting the ejection port inclination A70 to be the same value in the direction toward the collision point P80, it is possible to cause three or more local active gases to collide at the same collision point P80. In addition, the ejection port inclination A70 is a general term for the ejection port inclinations A71, A72, etc.

[0249] In the setting examples of the above-described ejection port inclinations A71 and A72, the formation interval R70, the residual film thickness T6, and the upper depth DT1, the collision depth DTX of the collision point P80 becomes 5.2 mm.

[0250] When considering the diameters of the gas ejection ports 70(1) and 70(2), etc., it can be considered that a plurality of local active gases collide in a collision region 80 that extends with the collision point P80 as the center. Thus, in the above example, the collision region 80 is formed from the upper region of the lower conical region 41t to the lower region of the upper region 41a. That is, the collision region 80 exists within the lower conical region 41t or within the upper region 41a above the lower conical region 41t.

[0251] (Ejection mode of the active gas G2)

[0252] Figures 38 to 41 These are explanatory diagrams schematically showing the ejection mode of the active gas G2 within the housing opening 41 of the electrode unit 55 of Embodiment 2. Figures 38 to 41 Each corresponds to Fig.34 a part of the D - D cross section. The XYZ orthogonal coordinate system is described in Figures 38 to 41 respectively.

[0253] Hereinafter, the ejection direction of the local active gas g2(1) ejected from the gas ejection port 70(1) is defined as the local active gas ejection direction V7(1), and the ejection direction of the local active gas g2(2) ejected from the gas ejection port 70(2) is defined as the local active gas ejection direction V7(2).

[0254] As Fig.38 shown, the local active gas g2(1) is ejected along the local active gas ejection direction V7(1) so as to reach the collision point P80, and the local active gas g2(2) is ejected along the local active gas ejection direction V7(2) so as to reach the collision point P80.

[0255] That is, the direction in which the local active gas g2(1) flows is only one direction of the local active gas ejection direction V7(1), and the direction in which the local active gas g2(2) flows is only one direction of the local active gas ejection direction V7(2).

[0256] After that, as Fig.39 shown, in the collision region 80 including the collision point P80, the local active gas g2(1) collides with the local active gas g2(2), and the local active gases g2(1) and g2(2) diffuse in a plurality of diffusion directions DK.

[0257] That is, the direction in which the local active gas g2(1) flows is dispersed from one local active gas ejection direction V7(1) into a plurality of diffusion directions DK, and the direction in which the local active gas g2(2) flows is dispersed from one local active gas ejection direction V7(2) into a plurality of diffusion directions DK. Thus, in the collision region 80, the directions in which the plurality of local active gases flow are dispersed from one direction into a plurality of diffusion directions.

[0258] Moreover, as Fig.40 shown, the intermediate supply direction DR1 of the plurality of local active gases is affected by the side surface of the lower conical region 41t and is restricted to be close to the conical inclination A41.

[0259] Thus, since the collision region 80 exists in the lower conical region 41t and the upper region 41a above the lower conical region 41t, the plurality of locally active gases after being diffused respectively flow in a conical direction along the side surface of the lower conical region 41t as they move downward.

[0260] After that, as Fig.41 shown, the plurality of local active gases are supplied to a subsequent processing space below in position along the final supply direction DR2, and the final supply direction DR2 extends along the conical inclination A41.

[0261] (Effect)

[0262] The active gas generation device 75 of the second embodiment having such a configuration has the same effects as those of the first embodiment, and also exhibits the following effects inherent to the second embodiment.

[0263] The active gas generation device 75 of the second embodiment houses the electrode unit 55 having the above-described ground conductor 60 in the inner space 1S of the housing 1. The plurality of gas ejection ports 70 provided in the ground conductor 60 of the electrode unit 55 of the second embodiment are arranged so as to approach each other as they go downward, so that the plurality of local active gases collide in the collision region 80 including the collision point P80, and the collision region 80 exists inside the lower conical region 41t or at a position above the lower conical region 41t.

[0264] Therefore, as Fig.39As shown, by the collision of multiple local active gases in the collision region 80, the directions in which the multiple local active gases flow respectively are dispersed from one direction into multiple diffusion directions DK.

[0265] The collision region 80 exists within the lower conical region 41t or at a position above the lower conical region 41t. Therefore, the multiple local active gases that have been diffused respectively flow downward along the Fig.40 shown intermediate supply direction DR1, which is a conical direction along the side surface of the lower conical region 41t.

[0266] After that, the active gas G2 including the multiple local active gases diffuses and flows from the lower conical region 41t toward the lower processing space along the Fig.41 shown final supply direction DR2, which is a conical direction along the side surface of the lower conical region 41t.

[0267] In this way, the multiple local active gases ejected from the multiple gas ejection ports 70 flow within the housing opening 41 as Figures 38 to 41 shown.

[0268] As a result, even if there is a large difference between the space pressure p0 of the buffer space 68 for the active gas and the space pressure p1 of the subsequent processing space, the active gas generation device 75 of Embodiment 1 can supply the uniform active gas G2 to the subsequent processing space.

[0269] In the electrode unit 55 of Embodiment 2, the multiple gas ejection ports 70 provided are respectively formed to be inclined in a direction approaching the collision region 80 including the collision point P80 as they face downward, and the formation slope, i.e., the ejection port inclination A70, of each of the multiple gas ejection ports 70 with respect to the horizontal direction serving as the reference direction is set to the same value.

[0270] Therefore, even if the number of the gas ejection ports 70 is three or more, the multiple local active gases ejected from the multiple gas ejection ports 70 can collide within the same collision region 80.

[0271] As a result, the active gas generation device 75 of Embodiment 2 can supply the more uniform active gas G2 to the subsequent processing space by dispersing the multiple local active gases into multiple diffusion directions respectively in one collision region 80.

[0272] Moreover, as Figure 1 shown, the active gas generation device 75 of Embodiment 2 adopts a structure in which multiple electrode units 55 are provided as the electrode units 51 to 53.

[0273] Therefore, the active gas generating device 75 of the second embodiment can uniformly supply the active gas G2 to a relatively large subsequent processing space by ejecting a plurality of local active gases from the plurality of electrode units 51 to 53 each having the same structure as the electrode unit 55 .

[0274] <Implementation method 3>

[0275] (Basic method)

[0276] Fig.42 1 is an explanatory diagram schematically showing a basic form of an electrode unit 81 used in an active gas generating device according to Embodiment 3. The active gas generating device according to Embodiment 3 includes an electrode unit 81 for activating a raw material gas G1 supplied to a discharge space 4 to generate an active gas G2.

[0277] As shown in the figure, the electrode unit 81 includes a high-voltage-side electrode configuration section E11 as a first electrode configuration section and a ground-side electrode configuration section E20 as a second electrode configuration section provided below the high-voltage-side electrode configuration section E11.

[0278] The high-voltage-side electrode configuration portion E11 as a first electrode configuration portion includes a dielectric film F2 as a first electrode dielectric film and a high-voltage electrode F5 as a first electrode conductive film provided on the upper surface of the dielectric film F2 .

[0279] The ground-side electrode configuration portion E20 as the second electrode configuration portion includes a dielectric film F3 as a second electrode dielectric film and a ground electrode F6 as a second electrode conductive film provided on the lower surface of the dielectric film F3.

[0280] The electrode unit 81 of the third embodiment is characterized by the following structure: a dielectric protection film FC2 as a dielectric protection member is closely provided on the lower surface of the dielectric film F2 without a gap. That is, the high-voltage side electrode component E11 in the electrode unit 81 of the third embodiment includes the dielectric film F2, the high-voltage electrode F5 and the dielectric protection film FC2.

[0281] A dielectric space 18 is formed between dielectric film F2 and dielectric film F3 via dielectric protection film FC2. Specifically, the space where dielectric protection film FC2 and dielectric film F3 face each other is dielectric space 18. Discharge space 4 includes a main discharge space in dielectric space 18, where high voltage electrode F5 and ground electrode F6 overlap in a plan view.

[0282] Thus, in the electrode unit 81 of the third embodiment, the dielectric film F2 of the dielectric film F2 and the dielectric film F3 is the protected dielectric film, and the dielectric protection film FC2 is provided on the dielectric space 18 side with respect to the dielectric film F2 being the protected dielectric film.

[0283] The constituent material of the dielectric protection film FC2 has the following protection characteristics: when dielectric barrier discharge occurs in the discharge space 4, it blocks the irradiation of ions generated by the dielectric barrier discharge to the dielectric film F2 that is the dielectric film to be protected, and does not chemically react with the ions.

[0284] As the constituent material of the dielectric protection film FC2, for example, silicon carbide with semi-insulating properties can be considered. Here, semi-insulating means having a resistivity of 1×105 Ω·cm or more and an insulation breakdown voltage of 1 kV / mm or more.

[0285] The dielectric protection film FC2 has the above-mentioned semi-insulating properties, so it can contribute to the dielectric barrier discharge generated in the discharge space 4. This is also the same for the dielectric protection films FC3 to FC5 in Embodiments 4 to 8 described later.

[0286] The electrode unit 81 further includes an AC power supply 15 that applies an AC voltage as an applied voltage between the high-voltage electrode F5 of the high-voltage side electrode forming portion E11 and the ground electrode F6 of the ground side electrode forming portion E20. Specifically, the high-voltage electrode F5 is applied with an AC voltage, and the ground electrode F6 is set to a ground potential as a reference potential.

[0287] The electrode unit 81 of the basic mode of Embodiment 3 generates dielectric barrier discharge in the discharge space 4 when an applied voltage is applied from the AC power supply 15.

[0288] In Fig.42 In the electrode unit 81 of the basic mode shown, the supply mode of the source gas G1 to the discharge space 4 and the ejection mode of the active gas G2 are not particularly limited. For example, in Fig.42 the source gas G1 can also be supplied from the left side of the figure and the active gas G2 can be ejected from the right side of the figure.

[0289] In the active gas generation device of Embodiment 3 having the electrode unit 81 as the basic mode, there is a dielectric protection member, namely the dielectric protection film FC2 having the above protection characteristics, between the dielectric space 18 including the discharge space 4 and the dielectric film F2 that is the dielectric film to be protected. Therefore, when dielectric barrier discharge occurs in the discharge space 4, the dielectric film reaction phenomenon in which the dielectric film F2 reacts with ions can be suppressed.

[0290] As a result, the active gas generation device of the basic mode of Embodiment 3 can generate a high-purity active gas G2 by reliably avoiding the mixing of elements of the dielectric film F2 and the like into the discharge space 4 accompanying the dielectric film reaction phenomenon.

[0291] Moreover, the electrode unit 81 can be formed only by adding the dielectric protection film FC2 without changing the constituent materials of the dielectric films F2 and F3 compared to before, so the manufacturing process of the electrode unit 81 will not be complicated.

[0292] In the active gas generation device of the basic mode of Embodiment 3, the dielectric protection film FC2 is disposed in close contact with the lower surface of the dielectric film F2 that is the dielectric film to be protected without a gap, so that a space where a discharge phenomenon occurs other than the discharge space 4 is not generated between the dielectric film F2 and the dielectric film F3, and the active gas G2 can be obtained with high precision.

[0293] The high-voltage side electrode forming portion E11 of the electrode unit 81 includes the dielectric protection film FC2. The active gas generation device of the basic mode of Embodiment 3 having the electrode unit 81 can activate the source gas G1 supplied to the discharge space 4 in the dielectric space 18 by applying an alternating voltage as an applied voltage between the high-voltage electrode F5 and the ground electrode F6 by the AC power supply 15, thereby generating the active gas G2.

[0294] (Second mode)

[0295] Fig.43 FIG. is an explanatory diagram showing the concept of the electrode unit 810 used in the active gas generation device of the second mode of Embodiment 3. An XYZ orthogonal coordinate system is shown in this figure.

[0296] Fig.43 The shown electrode unit 810 is a conceptual structure in which Fig.42 the shown electrode unit 81 of the basic mode is applied to the electrode unit 55 of Embodiment 2. In the electrode unit 810, the high-voltage side dielectric film 2 is used as the dielectric film F2, the ground side dielectric film 3 is used as the dielectric film F3, and the power supply body 5 is used as the high-voltage electrode F5. In addition, a conductive film 7 ( Fig. 20 , Fig.21 ) not shown is used as the ground electrode F6.

[0297] As shown in this figure, in the electrode unit 810 representing the concept of the second mode, the dielectric protection film FC2 is disposed in close contact with the lower surface of the high-voltage side dielectric film 2. In the electrode unit 810, there is no limitation on the formation method of the dielectric protection film FC2. By implementing the electrode unit 810 with the actual use structure, the following-described electrode unit 811 is obtained.

[0298] Fig.44 FIG. is an explanatory diagram showing the cross-sectional structure of the electrode unit 811 used in the active gas generation device that becomes the second mode of Embodiment 3. An XYZ orthogonal coordinate system is shown in this figure.

[0299] Fig.44 The electrode unit 811 shown is the actual use structure in which the electrode unit 81 of the basic type shown is applied to the electrode unit 55 of Embodiment 2. In the electrode unit 811, the high-voltage-side dielectric film 2 is used as the dielectric film F2, the ground-side dielectric film 3 is used as the dielectric film F3, and the power supply body 5 is used as the high-voltage electrode F5. Further, a conductive film 7 ( Fig.42 ) not shown is used as the ground electrode F6. Fig. 20 , Fig.21 )

[0300] In this way, the active gas generation device of the actual use structure in the second mode of Embodiment 3 becomes an active gas generation device having the electrode unit 811.

[0301] The overall configuration of the second mode of the active gas generation device of Embodiment 3 is the same as that of the active gas generation device 71 Figure 1 shown. Therefore, Fig.44 the electrode unit 811 shown corresponds to any one of the electrode units 51 to 53 in the active gas generation device 75 of the overall configuration Figure 1 shown.

[0302] That is, the second mode of the active gas generation device of Embodiment 3 is the same as the active gas generation device 71 of Embodiment 1, and includes electrode units 51 to 53 as a plurality of electrode units, and a housing 1 that houses the electrode units 51 to 53 in the housing space S1 (refer to Figure 8 ) and has conductivity.

[0303] Hereinafter, for the same structure as the electrode unit 50 (51 to 53) of Embodiment 1 or the same structure as the electrode unit 55 of Embodiment 2, the same reference numerals are given and the description is appropriately omitted, and the description will be centered on the characteristic parts of the electrode unit 811.

[0304] As Fig.44 shown, the electrode unit 811 is the same as the electrode unit 50 (51 to 53) of Embodiment 1. The lower surface of the high-voltage-side dielectric film 2 has a concave bottom surface 26 and a convex bottom surface 23 provided on the periphery of the concave bottom surface. The formation position of the convex bottom surface 23 in the height direction along the +Z direction is set higher than that of the concave bottom surface 26. A dielectric protective film FC2 is provided on the concave bottom surface 26, and the dielectric protective film FC2 is not provided on the convex bottom surface 23.

[0305] The electrode unit 811 includes a dielectric film support member 10B having a support surface 10F that serves as a dielectric support surface for supporting the convex bottom surface 23 of the high-voltage-side dielectric film 2 from below.

[0306] Fig.45 is an explanatory diagram schematically showing the planar structure of the dielectric film support member 10B. An XYZ orthogonal coordinate system is shown in this figure. In addition, the illustration of the groove portion 16 and the O-ring 17 described later is omitted in Fig.45 .

[0307] As Fig.45 shown, the dielectric film support member 10B is circular in plan view with a central opening 100 in the center. A stepped structure composed of a stepped portion 103, a stepped portion 102, and the upper surface 101 of the peripheral portion is provided in a circular ring shape around the central opening 100. The upper surface of the stepped portion 103 becomes the fixing auxiliary surface 10XF, and the upper surface of the stepped portion 102 becomes the support surface 10F. The stepped portion 102 (support surface 10F) is located on the outer peripheral side of the stepped portion 103 (10XF), and a plurality of through-holes 10h are discretely provided in a circular shape on the upper surface 101 of the peripheral portion on the outer peripheral side of the stepped portion 102.

[0308] The fixing auxiliary surface 10XF is provided in a circular ring shape along the outer periphery of the central opening 100, and the support surface 10F is provided in a circular ring shape along the outer periphery of the fixing auxiliary surface 10XF.

[0309] On the other hand, as described with reference to Fig. 9 and Fig.10 in Embodiment 1, the high-voltage side dielectric film 2 has a concave bottom surface 26 that is circular in plan view, and the bottom surface around the concave bottom surface 26 has a convex bottom surface 23 that is circular in plan view.

[0310] As Fig.44 and Fig.45 shown, the dielectric film support member 10B also has a fixing auxiliary surface 10XF that serves as a fixing auxiliary surface for the protection member, and this fixing auxiliary surface 10XF is disposed below the peripheral region of the dielectric protection film FC2 provided on the concave bottom surface 26 of the high-voltage side dielectric film 2.

[0311] The electrode unit 811 is the same as the electrode units 50 and 55, and includes a dielectric film pressing member 11 that presses the first electrode dielectric film, that is, the high-voltage side dielectric film 2 from above. The dielectric film pressing member 11 does not overlap the power supply body 5 in plan view.

[0312] In the dielectric film support member 10B, an O-ring 17 that functions as an elastic member is inserted between the fixing auxiliary surface 10XF that serves as a fixing auxiliary surface for the protection member and the lower surface of the dielectric protection film FC2. Due to the elastic force of the O-ring 17, the concave bottom surface 26 of the high-voltage side dielectric film 2 and the upper surface of the dielectric protection film FC2 are set to be in close contact. This will be described in detail below.

[0313] The dielectric film support member 10B has a groove portion 16 that is circular in plan view within the fixed auxiliary surface 10XF. Moreover, an O-ring 17 that is circular in plan view is provided within the groove portion 16. Thus, the electrode unit 811 includes the dielectric film support member 10B having the groove portion 16 and the O-ring 17.

[0314] The O-ring 17 provided in the groove portion 16 is generally used as a sealing material for sealing fluids such as gases. In the electrode unit 811, the O-ring 17 is used as an elastic member. Specifically, the elastic force generated when the O-ring 17 deforms is utilized.

[0315] In Fig.44 the O-ring 17 deforms by being sandwiched between the dielectric film support member 10B and the high-voltage side dielectric film 2 with the dielectric protection film FC2 interposed therebetween. Due to the elastic force of the O-ring 17 functioning as an elastic member, the upper surface of the dielectric protection film FC2 is in close contact with the lower surface of the high-voltage side dielectric film 2.

[0316] The electrode unit 811 used in the second mode of Embodiment 3 is the same as the basic mode. By reliably avoiding the mixing of elements of the dielectric film F2 and the like into the discharge space 4 accompanying the dielectric film reaction phenomenon, high-purity active gas G2 can thus be generated.

[0317] In addition, the electrode unit 811 does not need to change the constituent materials of the high-voltage side dielectric film 2 and the ground side dielectric film 3 compared to before. The main change points with respect to the electrode unit 55 are the improvement from the dielectric film support member 10 to the dielectric film support member 10B and the addition of the dielectric protection film FC2 to such an extent. Therefore, the manufacturing process of the electrode unit 811 does not become complicated.

[0318] For example, in the structure of the electrode unit 55, a case where the dielectric protection film FC2 is not provided and a constituent material having the above protection characteristics is used as the constituent material of the high-voltage side dielectric film 2 can be considered. Here, the high-voltage side dielectric film 2 using the constituent material having the above protection characteristics is designated as "high-voltage side dielectric film 2X". The high-voltage side dielectric film 2X has a relatively complex structure with a power supply body arrangement recess 28, a convex bottom surface 23, and a recess bottom surface 26. Therefore, when the workability of the constituent material having the above protection characteristics is poor, the processing required to obtain the high-voltage side dielectric film 2X becomes a relatively complex processing.

[0319] On the other hand, the dielectric protection film FC2 in the electrode unit 811 has a relatively simple flat plate structure, and only a relatively simple manufacturing process of arranging the dielectric protection film FC2 on the fixed auxiliary surface 10XF of the dielectric film support member 10B with the O-ring 17 interposed therebetween is added. Thus, the manufacturing process of the electrode unit 811 does not become complicated.

[0320] In addition, in the electrode unit 811, a dielectric protection film FC2 is provided on the lower surface of the high-voltage-side dielectric film 2 where no through-hole is provided. Therefore, the high-voltage-side dielectric film 2 can be completely protected from dielectric barrier discharge in the discharge space 4 by the dielectric protection film FC2.

[0321] The second mode of the active gas generation device of Embodiment 3 having such an electrode unit 811 exhibits the same effects as the basic mode of the active gas generation device having the electrode unit 81, and further exhibits the following inherent effects.

[0322] In the second mode of the active gas generation device of Embodiment 3, the dielectric film support member 10B of the electrode unit 811 supports the bottom surface 23 of the convex portion of the ground-side dielectric film 3 from below by the support surface 10F that serves as a dielectric support surface. Moreover, due to the elastic force of the O-ring 17 that functions as an elastic member, the bottom surface 26 of the concave portion of the high-voltage-side dielectric film 2 and the upper surface of the dielectric protection film FC2 are set to be in close contact.

[0323] Therefore, the second mode of the active gas generation device of Embodiment 3 can stably fix the dielectric protection film FC2 in close contact with the high-voltage-side dielectric film 2 by providing a relatively simple structure such as the dielectric film support member 10B and the O-ring 17.

[0324] In addition, the second mode of the active gas generation device of Embodiment 3 can improve the close contact accuracy between the bottom surface 26 of the concave portion of the high-voltage-side dielectric film 2 and the upper surface of the dielectric protection film FC2 by a relatively simple structure by utilizing the elastic force of the O-ring 17.

[0325] Moreover, in Fig.44 and Fig.45 the second mode of the active gas generation device of Embodiment 3 having the electrode unit 811 shown, the plurality of gas ejection ports 70 have the same characteristics as the electrode unit 55 of Embodiment 2. That is, the plurality of gas ejection ports 70 are arranged so as to approach each other as they face downward, so that a plurality of partial active gases collide in the collision region 80, and the collision region 80 exists within the lower conical region 41t (refer to Fig.36 and Fig.37 ) or at a position above the lower conical region 41t.

[0326] Therefore, the second mode in the active gas generation device of Embodiment 3 can supply the uniform active gas G2 to the subsequent processing space in the same manner as the active gas generation device of Embodiment 2.

[0327] In Embodiment 3, as an example of the actual configuration of the electrode unit 810, the electrode unit 811 using the O-ring 17 is shown, but the electrode unit 810 can also be implemented by other configurations. For example, the first and second modification examples described below can be considered.

[0328] As a first modification example, a configuration can be considered in which, between the fixing auxiliary surface 10XF of the dielectric film support member 10B and the dielectric protective film FC2, instead of the O-ring 17, it is made to adhere tightly by a general spring.

[0329] As a second modification example, a configuration can be considered in which a magnetic thin film region is provided at the end of the dielectric protective film FC2 with a magnetic material such as iron as the constituent material, and the dielectric protective film FC2 is held by attracting the magnetic thin film region by the magnetic force of a magnet provided above the magnetic thin film region of the dielectric protective film FC2. The magnetic thin film region can be formed using a sputtering method or the like. To implement the second modification example, the following methods can be considered: in the dielectric film pressing member 11 and the pressing member 12 of the electrode unit 811 shown, a magnet is provided in a region that overlaps the fixing auxiliary surface 10XF when viewed from above. Fig.44 shown, a magnet is provided in a region that overlaps the fixing auxiliary surface 10XF when viewed from above.

[0330] In addition, the magnetic thin film region can be provided on either the side facing the discharge space 4 or the side not facing the discharge space 4, but it is preferably provided at a position where ions and electrons generated by dielectric barrier discharge do not collide.

[0331] <Embodiment 4>

[0332] Fig.46 It is an explanatory diagram schematically showing the basic mode of the electrode unit 82 used in the active gas generation device of Embodiment 4. The active gas generation device of Embodiment 4 has an electrode unit 82 that activates the source gas G1 supplied to the discharge space 4 to generate the active gas G2.

[0333] As shown in this figure, the electrode unit 82 includes a high-voltage side electrode forming portion E10 that serves as the first electrode forming portion, and a ground side electrode forming portion E21 that is provided below the high-voltage side electrode forming portion E10 and serves as the second electrode forming portion.

[0334] The high-voltage side electrode forming portion E10 as the first electrode forming portion includes a dielectric film F2 as the first electrode dielectric film, and a high-voltage electrode F5 as the first electrode conductive film provided on the upper surface of the dielectric film F2.

[0335] The ground side electrode forming portion E21 as the second electrode forming portion includes a dielectric film F3 as the second electrode dielectric film, and a ground electrode F6 as the second electrode conductive film provided on the lower surface of the dielectric film F3.

[0336] The electrode unit 82 of Embodiment 4 is characterized by the following structure: a dielectric protection film FC3 as a dielectric protection member is disposed in close contact without a gap on the upper surface of the dielectric film F3. That is, the ground-side electrode forming portion E21 in the electrode unit 82 of Embodiment 4 includes the dielectric film F3, the ground electrode F6, and the dielectric protection film FC3.

[0337] A dielectric space 18 is provided between the dielectric film F2 and the dielectric film F3 with the dielectric protection film FC3 interposed therebetween. Specifically, in the electrode unit 82, the dielectric protection film FC3 is disposed in close contact on the upper surface of the dielectric film F3, and the space where the dielectric film F2 and the dielectric protection film FC3 face each other becomes the dielectric space 18. In this dielectric space 18, a discharge space 4 including a region where the high-voltage electrode F5 and the ground electrode F6 overlap in a plan view, that is, the main discharge space, is formed.

[0338] Thus, in the electrode unit 82 of Embodiment 4, the dielectric film F3 in the dielectric film F2 and the dielectric film F3 becomes the dielectric film to be protected, and the dielectric protection film FC3 is provided on the dielectric space 18 side with respect to the dielectric film F3 that is the dielectric film to be protected.

[0339] The constituent material of the dielectric protection film FC3 is the same as that of the dielectric protection film FC2, and has the following protection characteristics: when dielectric barrier discharge occurs in the discharge space 4, it blocks the irradiation of ions generated by the dielectric barrier discharge to the dielectric film F3 that is the dielectric film to be protected, and does not chemically react with the ions.

[0340] The electrode unit 82 further includes an AC power supply 15 that applies an AC voltage as an applied voltage between the high-voltage electrode F5 of the high-voltage side electrode forming portion E10 and the ground electrode F6 of the ground-side electrode forming portion E21. Specifically, an AC voltage is applied to the high-voltage electrode F5, and the ground electrode F6 is set to a ground potential as a reference potential.

[0341] When the applied voltage is applied from the AC power supply 15, the electrode unit 82 of the basic mode of Embodiment 4 generates dielectric barrier discharge in the discharge space 4.

[0342] In Fig.46 In the electrode unit 82 of the basic mode shown, the supply mode of the raw material gas G1 to the discharge space 4 and the ejection mode of the active gas G2 are not particularly limited. For example, in Fig.46 , the raw material gas G1 may be supplied from the left side in the figure, and the active gas G2 may be ejected from the right side in the figure.

[0343] In the active gas generation device of Embodiment 4 having the electrode unit 82, there is a dielectric protective member, i.e., a dielectric protective film FC3 having the above-described protective characteristics, between the dielectric space 18 including the discharge space 4 and the dielectric film F3 that is the dielectric film to be protected. Therefore, when dielectric barrier discharge occurs in the discharge space 4, a dielectric film reaction phenomenon in which the dielectric film F3 reacts with ions can be suppressed.

[0344] As a result, the active gas generation device of the basic mode of Embodiment 4 can generate a high-purity active gas G2 by reliably avoiding the mixing of elements of the dielectric film F3 and the like into the discharge space 4 accompanying the dielectric film reaction phenomenon.

[0345] In addition, the electrode unit 82 does not need to change the constituent materials of the dielectric films F2 and F3 compared to before, and can be configured by simply adding the dielectric protective film FC3. Therefore, the manufacturing process of the electrode unit 82 is not complicated.

[0346] In the active gas generation device of the basic mode of Embodiment 4, the dielectric protective film FC3 is disposed in close contact with the upper surface of the dielectric film F3 that is the dielectric film to be protected without a gap. Therefore, the active gas G2 can be obtained with high precision without generating a discharge phenomenon in a space other than the discharge space 4 between the dielectric films F2 and F3.

[0347] The ground-side electrode forming portion E21 of the electrode unit 82 includes the dielectric protective film FC3. The active gas generation device of Embodiment 4 having this electrode unit 82 can activate the source gas G1 supplied to the discharge space 4 in the dielectric space 18 and generate the active gas G2 by applying a voltage between the high-voltage electrode F5 and the ground electrode F6.

[0348] In addition, a dielectric protective member represented by the dielectric protective film FC3 can exhibit the above-described effects as long as it is disposed on the dielectric space 18 side with respect to at least one of the dielectric films F2 and F3, i.e., the dielectric film to be protected.

[0349] Therefore, the electrode unit 82 can be extended to further provide a dielectric protective film FC2 on the lower surface of the dielectric film F2. Similarly, the electrode unit 81 of Embodiment 3 can be extended to further provide a dielectric protective film FC3 on the upper surface of the dielectric film F3.

[0350] <Embodiment 5>

[0351] (Basic mode)

[0352] Fig.471 is an explanatory diagram schematically showing a basic form of an electrode unit 83 used in an active gas generating device according to Embodiment 5. The active gas generating device according to Embodiment 5 includes an electrode unit 83 for activating a raw material gas G1 supplied to a discharge space 4 to generate an active gas G2.

[0353] Hereinafter, the same reference numerals are used for the same structures as those of the electrode unit 81 of the third embodiment, and the description thereof will be omitted as appropriate, and the description will be mainly focused on the characteristic parts of the electrode unit 83 .

[0354] As shown in the figure, the electrode unit 83 includes a high-voltage-side electrode configuration section E12 as a first electrode configuration section and a ground-side electrode configuration section E20 as a second electrode configuration section provided below the high-voltage-side electrode configuration section E12.

[0355] The high-voltage-side electrode configuration portion E12 as a first electrode configuration portion includes a dielectric film F2 as a first electrode dielectric film and a high-voltage electrode F5 as a first electrode conductive film provided on the upper surface of the dielectric film F2.

[0356] The ground-side electrode configuration portion E20 as the second electrode configuration portion includes a dielectric film F3 as a second electrode dielectric film and a ground electrode F6 as a second electrode conductive film provided on the lower surface of the dielectric film F3.

[0357] The electrode unit 83 of the fifth embodiment is characterized in that a dielectric protection film FC4 as a dielectric protection member is provided below a dielectric film F2 as a first electrode dielectric film via a protection member space 40 .

[0358] Thus, the high-voltage side electrode component E12 in the electrode unit 83 of the fifth embodiment includes the dielectric film F2, the high-voltage electrode F5 and the dielectric protection film FC4, and the dielectric protection film FC4 is configured to have a protection component space 40 with a small gap between it and the dielectric film F2 which is the dielectric film to be protected.

[0359] A dielectric space 18 is provided between the dielectric film F2 and the dielectric film F3 via the dielectric protection film FC4. Specifically, the space where the dielectric protection film FC4 and the dielectric film F3 face each other is the dielectric space 18. In the dielectric space 18, a discharge space 4 including a main discharge space, which is an area where the high voltage electrode F5 and the ground electrode F6 overlap in a plan view, is formed.

[0360] Thus, in the electrode unit 83 of the fifth embodiment, the dielectric film F2 of the dielectric film F2 and the dielectric film F3 is the protected dielectric film, and the dielectric protection film FC4 is provided on the dielectric space 18 side with respect to the dielectric film F2 being the protected dielectric film.

[0361] The constituent material of the dielectric protection film FC4 is the same as that of the dielectric protection film FC2 in Embodiment 3 and the dielectric protection film FC3 in Embodiment 4, and has the following protection characteristics: When dielectric barrier discharge is generated in the discharge space 4, it blocks the irradiation of ions generated by the dielectric barrier discharge to the dielectric film F2 that is the dielectric film to be protected, and does not chemically react with the ions.

[0362] The electrode unit 83 in the basic mode of Embodiment 5 generates dielectric barrier discharge in the discharge space 4 when an applied voltage is applied from the AC power supply 15.

[0363] At this time, the applied voltage, the discharge space 4, and the protection member space 40 are set to satisfy the discharge generation requirements for generating dielectric barrier discharge in the discharge space 4 when the applied voltage is applied and not generating dielectric barrier discharge in the protection member space 40. Hereinafter, the discharge generation requirements will be described.

[0364] Generally speaking, the voltage required to generate discharge in dielectric barrier discharge has the following property: If the pressure and gas type are constant, a higher voltage is required as the discharge distance (gap length) becomes longer. This property is called Paschen's law.

[0365] For example, in nitrogen gas at a pressure of 400 Torr, based on Paschen's law, the discharge start voltage when the discharge distance is 1 mm is about 2900 V, and the discharge start voltage when the discharge distance is 2.5 mm becomes about 6600 V. On the other hand, regarding the electric field strength at the start of discharge, the former is 2900 V / mm and the latter is 2640 V / mm, having the characteristic that the electric field strength required for discharge becomes smaller as the discharge distance becomes longer.

[0366] The dielectric barrier discharge adopted by the electrode unit 83 is called the parallel plate method, and has the characteristic that the electric field strength applied to the protection member space 40 and the discharge space 4 is the same value. According to this characteristic, by shortening the discharge distance (gap length) of the protection member space 40 and intentionally increasing the discharge start electric field strength, the part where discharge is generated can be selectively set to only the discharge space 4.

[0367] Here, let the applied voltage VP be the applied voltage applied from the AC power supply 15, let the gap length Δ4 be the gap length of the discharge space 4, and let the gap length Δ40 be the gap length of the protection member space 40. Moreover, let the discharge start electric field strength E4 be the electric field strength required to start generating dielectric barrier discharge in the discharge space 4, let the discharge start electric field strength E40 be the electric field strength required to start generating dielectric barrier discharge in the protection member space 40, and let the electric field strength EX be the same value of the electric field strength common to the discharge space 4 and the protection member space 40.

[0368] In this case, between the electric field strength EX, the discharge-starting electric field strength E4, and the discharge-starting electric field strength E40, {EX < E40} and {EX ≥ E4} become the requirements for discharge generation. If these discharge-generation requirements are satisfied, dielectric barrier discharge is generated in the discharge space 4, and dielectric barrier discharge is not generated in the protective member space 40.

[0369] By setting the gap length Δ40 to be sufficiently shorter than the gap length Δ4, it is possible to set {E40 >> E4}. Therefore, it is possible to relatively easily set the applied voltage VP, the gap length Δ4, and the gap length Δ40 that satisfy the above discharge-generation requirements ({EX < E40} and {EX ≥ E4}).

[0370] In Fig.47 the electrode unit 83 of the basic mode shown, the supply mode of the source gas G1 to the discharge space 4 and the ejection mode of the active gas G2 are not particularly limited. For example, in Fig.47 it is also possible to supply the source gas G1 from the left side in the figure and eject the active gas G2 from the right side in the figure.

[0371] In the active gas generation device of Embodiment 5 having the electrode unit 83 as the basic mode, between the dielectric space 18 including the discharge space 4 and the dielectric film F2 that is the dielectric film to be protected, there is a dielectric protective member having the above protective characteristics, namely, the dielectric protective film FC4. Therefore, when dielectric barrier discharge is generated in the discharge space 4, it is possible to suppress the dielectric film reaction phenomenon in which the dielectric film F2 reacts with ions.

[0372] As a result, the active gas generation device of the basic mode of Embodiment 5 can generate the high-purity active gas G2 by reliably avoiding the mixing of elements of the dielectric film F2 and the like into the discharge space 4 accompanying the dielectric film reaction phenomenon.

[0373] In addition, the electrode unit 83 does not need to change the constituent materials of the dielectric films F2 and F3 from before and can be constituted only by adding the dielectric protective film FC4. Therefore, the manufacturing process of the electrode unit 83 is not complicated.

[0374] In the basic mode of the active gas generation device of Embodiment 5, there is a protective member space 40 between the dielectric protective film FC4 as the dielectric protective member and the dielectric film F2 that is the dielectric film to be protected. Therefore, it is not necessary to make the dielectric protective film FC4 in close contact with the dielectric film F2, and accordingly, the simplification of the device configuration can be achieved.

[0375] In addition, by setting the gap length Δ40 of the protection member space 40 to be sufficiently shorter than the gap length Δ4 of the discharge space 4, it is possible to relatively easily set the applied voltage, the discharge space 4, and the protection member space 40 that satisfy the above-described discharge generation requirements.

[0376] As a result, the active gas generation device of Embodiment 5 highly accurately obtains the active gas G2 without forming a space where a discharge phenomenon occurs other than the discharge space 4 between the dielectric film F2 and the dielectric film F3.

[0377] The high-voltage side electrode forming portion E12 of the electrode unit 83 includes the dielectric protection film FC4, and the applied voltage applied by the electrode unit 83 between the dielectric films F2 and F3 satisfies the above-described discharge generation requirements. Therefore, the active gas generation device of Embodiment 5 having the electrode unit 83 can prevent dielectric barrier discharge from occurring in the protection member space 40 formed between the dielectric film F2 and the dielectric protection film FC4, and can generate dielectric barrier discharge in the discharge space 4 including the main discharge space formed between the dielectric protection film FC4 and the dielectric film F3.

[0378] As a result, the active gas generation device of Embodiment 5 can activate the source gas G1 supplied to the discharge space 4 to generate the active gas G2.

[0379] (Second Mode)

[0380] Fig.48 FIG. is an explanatory diagram schematically showing the concept of the electrode unit 830 used in the active gas generation device of the second mode of Embodiment 5. An XYZ orthogonal coordinate system is shown in this figure.

[0381] The electrode unit 830 shows the characteristic part of the conceptual structure in which the Fig.47 shown basic mode electrode unit 83 is applied to the electrode unit 55 of Embodiment 2.

[0382] As shown in this figure, in the electrode unit 830 showing the characteristic part of the concept of the second mode, the dielectric protection film FC4 is provided on the lower surface side of the high-voltage side dielectric film 2 with a protection member space 40 therebetween having a minute gap.

[0383] The electrode unit 830 includes a dielectric film support member M10 having a support surface 10F that is a dielectric support surface for supporting the peripheral region of the dielectric film F2 from below, and a support surface 10YF that is a protection member support surface for supporting the peripheral region of the dielectric protection film FC4 from below.

[0384] By implementing the Fig.48 shown electrode unit 830 in an actual use structure, the following-described electrode unit 831 is obtained.

[0385] Fig.49 It is an explanatory diagram showing a cross-sectional structure of the electrode unit 831 used in the active gas generation device of the second mode of Embodiment 5. Fig.50 It schematically shows Fig.49 an explanatory diagram of the detailed structure of the region of interest R3. In Fig.49 and Fig.50 the XYZ orthogonal coordinate system is respectively described.

[0386] Fig.49 The electrode unit 831 shown in Fig.47 is an actual use structure in which the electrode unit 83 of the basic mode shown in Fig. 20 is applied to the electrode unit 55 of Embodiment 2. In the electrode unit 831, the high-voltage side dielectric film 2 is used as the dielectric film F2, the ground side dielectric film 3 is used as the dielectric film F3, the power supply body 5 is used as the high-voltage electrode F5, and the dielectric film support member 10C is used as the dielectric film support member M10. In addition, a conductive film 7 ( Fig.21 ) not shown is used as the ground electrode F6.

[0387] In this way, the active gas generation device of the second mode of Embodiment 5 becomes an active gas generation device having the electrode unit 831.

[0388] The overall configuration of the second mode of the active gas generation device of Embodiment 5 is the same as that of the active gas generation device 71 shown in Figure 1 . Therefore, Fig.49 the electrode unit 831 shown in Figure 1 corresponds to any one of the electrode units 51 to 53 in the active gas generation device 75 having the overall configuration shown in

[0389] That is, the second mode in the active gas generation device of Embodiment 5 is the same as the active gas generation device 71 of Embodiment 1, and includes the electrode units 51 to 53 as a plurality of electrode units, and a housing 1 that houses the electrode units 51 to 53 in the housing space S1 (see Figure 8 ) and has conductivity.

[0390] Hereinafter, for the structures that are the same as those of the electrode unit 50 (51 to 53) of Embodiment 1 or the electrode unit 55 of Embodiment 2, the same reference numerals are given and the description is appropriately omitted, and the description will be centered on the characteristic parts of the electrode unit 831.

[0391] As Fig.49As shown, the electrode unit 831 is the same as the electrode unit 50 (51 - 53) of Embodiment 1. The lower surface of the high-voltage side dielectric film 2 has a concave bottom surface 26 and a convex bottom surface 23 provided at the periphery of the concave bottom surface. The formation position of the convex bottom surface 23 in the height direction along the +Z direction is set higher than that of the concave bottom surface 26. A dielectric protection film FC4 (refer to Fig.50 ) is provided below the concave bottom surface 26 with a protection member space 40 therebetween, and the dielectric protection film FC4 is not provided on the convex bottom surface 23.

[0392] The structure of the dielectric protection film FC4 in the electrode unit 831 is set to be flat, and the planar shape of the dielectric protection film FC4 on the XY plane is set to be a circular shape slightly larger than the concave bottom surface 26 shown in Fig. 9 and Fig.10 .

[0393] In Fig.50 , the illustration of the conductive film 7 is omitted. A ground-side dielectric film 3 is provided on the ground conductor 60 with an unillustrated conductive film 7 therebetween.

[0394] As Fig.50 shown, the dielectric protection film FC4 is disposed on the lower surface side of the high-voltage side dielectric film 2 with a protection member space 40 having a minute gap length Δ40 therebetween. Moreover, a discharge space 4 with a gap length Δ4 is formed between the dielectric protection film FC4 and the ground-side dielectric film 3. In addition, a power supply body 5 is provided on the upper surface of the high-voltage side dielectric film 2, and a ground conductor 60 is provided on the lower surface side of the ground-side dielectric film 3.

[0395] In the electrode unit 831, in order to satisfy the above discharge generation requirements, the gap length Δ40 of the discharge distance of the protection member space 40 is set to be sufficiently shorter than the gap length Δ4 of the discharge distance of the discharge space 4.

[0396] The electrode unit 831 includes a dielectric film support member 10C, and the dielectric film support member 10C has a support surface 10F that serves as a dielectric support surface for supporting the convex bottom surface 23 of the high-voltage side dielectric film 2 from below.

[0397] Fig.51 is an explanatory diagram schematically showing the planar structure of the dielectric film support member 10C. An XYZ orthogonal coordinate system is shown in this figure.

[0398] As Fig.51As shown, the dielectric film support member 10C is circular in plan view with a central opening 100 in the center. Around the central opening 100, a stepped structure composed of a stepped portion 104, a stepped portion 102, and the upper surface 101 of the peripheral portion is provided in a circular ring shape. The upper surface of the stepped portion 104 becomes the support surface 10YF, and the upper surface of the stepped portion 102 becomes the support surface 10F. The stepped portion 102 (support surface 10F) is located on the outer peripheral side of the stepped portion 104 (10YF). On the upper surface 101 of the peripheral portion on the outer peripheral side of the stepped portion 102, a plurality of through holes 10h are discretely provided in a circular shape.

[0399] The support surface 10YF is provided in a circular ring shape along the outer periphery of the central opening 100, and the support surface 10F is provided in a circular ring shape along the outer periphery of the support surface 10YF.

[0400] As Fig.49 and Fig.51 shown, the dielectric film support member 10C also has a support surface 10YF, and this support surface 10YF becomes a support surface of a protection member that supports the peripheral region of the dielectric protection film FC4 from below.

[0401] Therefore, by supporting the peripheral region of the dielectric protection film FC4 from below by the support surface 10YF, the position in the height direction along the Z direction of the dielectric protection film FC4 can be fixed.

[0402] In addition, by setting the inner diameter of the stepped portion 102 to be slightly larger than the radius of the dielectric protection film FC4 having a circular planar shape, the movement of the dielectric protection film FC4 in the XY plane can be restricted with high precision.

[0403] The electrode unit 831 is the same as the electrode units 50 and 55, and has a dielectric film pressing member 11 that presses the high-voltage side dielectric film 2, which is a first electrode dielectric film, from above. The dielectric film pressing member 11 does not overlap with the power supply body 5 in plan view.

[0404] In the dielectric film support member 10C, the support surface 10F, which is a dielectric support surface, is formed at a higher position in the height direction than the support surface 10YF, which is a support surface of a protection member. The difference value Δd in the height direction between the support surface 10F and the support surface 10YF is set to form a protection member space 40 with a gap length Δ40 between the lower surface of the high-voltage side dielectric film 2 and the upper surface of the dielectric protection film FC4.

[0405] For example, the dielectric protective film FC4 has a uniform film thickness dC4. When the length of the bottom surface 26 of the concave portion from the bottom surface 23 of the convex portion in the -Z direction, i.e., the depth direction, is set as the protruding length t26, the difference value Δd is set to a length that satisfies {Δd = dC4 + t26 + Δ40}. At this time, the gap length Δ40 of the protective member space 40 needs to be set to be sufficiently shorter than the gap length Δ4 of the discharge space 4 in order to satisfy the above-mentioned discharge generation requirements. In addition, the film thicknesses of the dielectric protective films FC2 to FC5 including the above-mentioned dielectric protective film FC4 are set to 1 mm or less.

[0406] The electrode unit 831 used in the second mode of Embodiment 5 is the same as the basic mode. By reliably avoiding the mixing of elements of the dielectric film F2 and the like accompanying the dielectric film reaction phenomenon into the discharge space 4, highly pure active gas G2 can be generated.

[0407] In addition, the electrode unit 831 does not need to change the constituent materials of the high-voltage side dielectric film 2 and the ground side dielectric film 3 compared with before. The main change points compared with the electrode unit 55 are the improvement from the dielectric film support member 10 to the dielectric film support member 10C and the degree of addition of the dielectric protective film FC4. Therefore, the manufacturing process of the electrode unit 831 will not be complicated, similar to the manufacturing process of the electrode unit 811.

[0408] In addition, in the electrode unit 831, a dielectric protective film FC4 is provided below the high-voltage side dielectric film 2 without a through-hole. Therefore, the high-voltage side dielectric film 2 can be completely protected from dielectric barrier discharge in the discharge space 4 by the dielectric protective film FC4.

[0409] The second mode of the active gas generation device of Embodiment 5 having such an electrode unit 831 exhibits the same effects as the basic mode of the active gas generation device having the electrode unit 83, and further exhibits the following inherent effects.

[0410] In the electrode unit 831 of the active gas generation device in the second mode of Embodiment 5, the dielectric film support member 10C supports the peripheral region of the high-voltage side dielectric film 2 from below through the dielectric support surface, i.e., the support surface 10F, and supports the peripheral region of the dielectric protective film FC4 from below through the protective member support surface, i.e., the support surface 10YF.

[0411] Moreover, in the electrode unit 831, the difference value Δd between the support surface 10F and the support surface 10YF is set to form a protective member space 40 with a gap length Δ40 between the lower surface of the high-voltage side dielectric film 2 and the upper surface of the dielectric protective film FC4.

[0412] Therefore, the active gas generation device of the second aspect of Embodiment 5 can stably fix the dielectric protection film FC4 having a protection member space 40 between the high-pressure side dielectric film 2 with good stability.

[0413] Moreover, Figures 49 to 51 In the second aspect of the active gas generation device of Embodiment 5 having the electrode unit 831 shown, the plurality of gas ejection ports 70 have the same characteristics as the electrode unit 55 of Embodiment 2. That is, the plurality of gas ejection ports 70 are arranged so as to approach each other as they face downward, so that a plurality of partial active gases collide in the collision region 80, and the collision region 80 exists in the lower conical region 41t (see Fig.36 and Fig.37 ) or at a position above the lower conical region 41t.

[0414] As a result, the second aspect of the active gas generation device of Embodiment 5 is the same as the electrode unit 55 of Embodiment 2 and the electrode unit 811 of the second aspect of Embodiment 3, and can supply the uniform active gas G2 to the subsequent processing space.

[0415] In Embodiment 5, the electrode unit 831 is shown as an example of the actual use structure for realizing the electrode unit 830, but the electrode unit 830 can also be realized by other structures.

[0416] <Embodiment 6>

[0417] Fig.52 FIG. is an explanatory diagram schematically showing the basic aspect of the electrode unit 84 used in the active gas generation device of Embodiment 6. The active gas generation device of Embodiment 6 has an electrode unit 84 that activates the source gas G1 supplied to the discharge space 4 to generate the active gas G2.

[0418] As shown in this figure, the electrode unit 84 includes a high-pressure side electrode forming portion E10 that serves as a first electrode forming portion, and a ground side electrode forming portion E22 that serves as a second electrode forming portion provided below the high-pressure side electrode forming portion E10.

[0419] The high-pressure side electrode forming portion E10 as the first electrode forming portion includes a dielectric film F2 as a first electrode dielectric film, and a high-voltage electrode F5 as a first electrode conductive film provided on the upper surface of the dielectric film F2.

[0420] The ground side electrode forming portion E22 as the second electrode forming portion includes a dielectric film F3 as a second electrode dielectric film, and a ground electrode F6 as a second electrode conductive film provided on the lower surface of the dielectric film F3.

[0421] The electrode unit 84 of Embodiment 6 is characterized by the following structure: A dielectric protection film FC5 as a dielectric protection member is provided above a dielectric film F3 as a second-electrode dielectric film with a protection member space 40 therebetween serving as a minute gap. That is, the ground-side electrode forming portion E22 in the electrode unit 84 of Embodiment 6 includes the dielectric film F3, the ground electrode F6, and the dielectric protection film FC5.

[0422] A dielectric space 18 is provided between the dielectric film F2 and the dielectric film F3 with the protection member space 40 and the dielectric protection film FC5 therebetween. Specifically, the space where the dielectric film F2 and the dielectric protection film FC5 face each other becomes the dielectric space 18. A discharge space 4 including a region where the high-voltage electrode F5 and the ground electrode F6 overlap in a plan view, that is, a main discharge space, is formed in the dielectric space 18.

[0423] Thus, in the electrode unit 84 of Embodiment 6, the dielectric film F3 among the dielectric film F2 and the dielectric film F3 becomes the dielectric film to be protected, and the dielectric protection film FC5 is provided on the dielectric space 18 side with respect to the dielectric film F3 as the dielectric film to be protected.

[0424] The constituent material of the dielectric protection film FC5 is the same as that of the dielectric protection films FC2 to FC4, and has the following protection characteristics: When dielectric barrier discharge occurs in the discharge space 4, it blocks the irradiation of ions generated by the dielectric barrier discharge to the dielectric film F3 as the dielectric film to be protected, and does not chemically react with the ions.

[0425] The electrode unit 84 further includes an AC power supply 15 that applies an AC voltage as an applied voltage between the high-voltage electrode F5 of the high-voltage side electrode forming portion E10 and the ground electrode F6 of the ground-side electrode forming portion E22. Specifically, the high-voltage electrode F5 is applied with an AC voltage, and the ground electrode F6 is set to a ground potential as a reference potential.

[0426] When the applied voltage is applied from the AC power supply 15, dielectric barrier discharge occurs in the discharge space 4 in the electrode unit 84 of the basic mode of Embodiment 6.

[0427] In Fig.52 In the electrode unit 84 of the basic mode shown, the supply mode of the source gas G1 to the discharge space 4 and the ejection mode of the active gas G2 are not particularly limited. For example, in Fig.52 the source gas G1 may also be supplied from the left side in the figure, and the active gas G2 may be ejected from the right side in the figure.

[0428] In the active gas generation device of Embodiment 6 having the electrode unit 84, there is a dielectric protection member, i.e., a dielectric protection film FC5 having the above protection characteristics, between the dielectric space 18 including the discharge space 4 and the dielectric film F3 that is the dielectric film to be protected. Therefore, when dielectric barrier discharge occurs in the discharge space 4, the dielectric film reaction phenomenon in which the dielectric film F3 reacts with ions can be suppressed.

[0429] As a result, the active gas generation device of the basic mode of Embodiment 6 can generate a high-purity active gas G2 by reliably avoiding the mixing of elements of the dielectric film F3 and the like into the discharge space 4 accompanying the dielectric film reaction phenomenon.

[0430] In addition, the electrode unit 84 does not need to change the constituent materials of the dielectric films F2 and F3 compared to before, and can be constituted only by adding the dielectric protection film FC5. Therefore, the manufacturing process of the electrode unit 84 is not complicated.

[0431] In the basic mode of the active gas generation device of Embodiment 6, there is a protection member space 40 between the dielectric protection film FC5 as the dielectric protection member and the dielectric film F3 that is the dielectric film to be protected. Therefore, it is not necessary to make the dielectric protection film FC5 closely adhere to the dielectric film F3, and accordingly, the simplification of the device configuration can be achieved.

[0432] In addition, by setting the gap length Δ40 of the protection member space 40 to a length sufficiently shorter than the gap length Δ4 of the discharge space 4, the applied voltage from the AC power supply 15, the discharge space 4, and the protection member space 40 that satisfy the above discharge generation requirements can be set relatively easily.

[0433] As a result, the active gas generation device of Embodiment 6 can obtain the active gas G2 with high precision without generating a discharge phenomenon space other than the discharge space 4 between the dielectric film F2 and the dielectric film F3.

[0434] The ground-side electrode constituting portion E22 of the electrode unit 84 includes the dielectric protection film FC5. The active gas generation device of Embodiment 5 having the electrode unit 84 applies an applied voltage between the dielectric films F2 and F3, so that dielectric barrier discharge does not occur in the protection member space 40 formed between the dielectric protection film FC5 as the dielectric protection member and the dielectric film F3, and dielectric barrier discharge occurs in the discharge space 4.

[0435] As a result, the active gas generation device of Embodiment 6 can activate the raw material gas G1 supplied to the discharge space 4 to generate the active gas G2.

[0436] In addition, the dielectric protection member equivalent to the dielectric protection film FC5 can exhibit the above-described effects as long as it is provided on the dielectric space 18 side with respect to at least one of the dielectric films F2 and F3, i.e., the dielectric film to be protected.

[0437] Therefore, the electrode unit 84 can also be extended to further provide the dielectric protection film FC4 on the lower surface side of the dielectric film F2 with a protection member space 40 therebetween. Similarly, the electrode unit 83 of Embodiment 5 can also be extended to further provide the dielectric protection film FC5 on the upper surface side of the dielectric film F3 with a protection member space 40 therebetween.

[0438] In this case, two protection member spaces 40 are formed on the lower surface side of the dielectric film F2 and the upper surface side of the dielectric film F3. The gap length Δ40 of each of the two protection member spaces 40 is set to be sufficiently shorter than the gap length Δ4 of the discharge space 4 to satisfy the above-described discharge generation requirements.

[0439] <Embodiment 7>

[0440] (Basic mode)

[0441] Fig.53 FIG. is an explanatory diagram schematically showing the basic mode of the electrode unit 91 used in the active gas generation device of Embodiment 7. The active gas generation device of Embodiment 7 includes an electrode unit 91 that activates the source gas G1 supplied to the discharge space 4 to generate the active gas G2.

[0442] As shown in this figure, the electrode unit 91 includes a high-voltage side electrode forming portion E13 that serves as a first electrode forming portion, and a ground side electrode forming portion E20 that serves as a second electrode forming portion and is provided below the high-voltage side electrode forming portion E13.

[0443] The high-voltage side electrode forming portion E13 as the first electrode forming portion includes a dielectric film F2 as a first electrode dielectric film, and a high-voltage electrode F5 as a first electrode conductive film provided on the upper surface of the dielectric film F2.

[0444] The ground side electrode forming portion E20 as the second electrode forming portion includes a dielectric film F3 as a second electrode dielectric film, and a ground electrode F6 as a second electrode conductive film provided on the lower surface of the dielectric film F3.

[0445] The high-voltage side electrode forming portion E13 in the electrode unit 91 of Embodiment 7 is characterized in that it further includes a conductor film F7 as an electrode reinforcing conductive film and a dielectric protection film FC2 as a dielectric protection member. In addition, the film thickness of the dielectric protection film FC2 is set to 1 mm or less.

[0446] The conductor film F7 serving as an electrode reinforcing conductive film is closely disposed on the lower surface of the dielectric film F2 serving as a dielectric film for a first electrode. As the conductor film F7, for example, a thin film made of metal can be considered, and the film thickness of the conductor film F7 is set to 500 nm or less, for example.

[0447] The dielectric protection film FC2 serving as a dielectric protection member covers the entire conductor film F7 and is disposed on the lower surface of the high-voltage electrode F5. Thus, the high-voltage side electrode forming portion E13 has a laminated structure in which the dielectric film F2, the conductor film F7, and the dielectric protection film FC2 are laminated in this order, that is, a conductor film built-in laminated structure. In the conductor film built-in laminated structure, there is no gap between the dielectric film F2 and the conductor film F7, between the conductor film F7 and the dielectric protection film FC2, and between the dielectric film F2 and the dielectric protection film FC2. The conductor film F7 in the conductor film built-in laminated structure is set in an electrically floating state.

[0448] As described above, the high-voltage side electrode forming portion E13 in the electrode unit 91 of the seventh embodiment includes the dielectric film F2, the high-voltage electrode F5, the conductor film F7, and the dielectric protection film FC2.

[0449] A dielectric space 18 is formed between the dielectric film F2 and the dielectric film F3 with the conductor film F7 and the dielectric protection film FC2 interposed therebetween. Specifically, the space where the dielectric protection film FC2 faces the dielectric film F3 becomes the dielectric space 18.

[0450] As described above, in the electrode unit 91 of the seventh embodiment, the dielectric film F2 among the dielectric film F2 and the dielectric film F3 becomes the dielectric film to be protected, and the dielectric protection film FC2 is provided on the dielectric space 18 side with respect to the dielectric film F2 that is the dielectric film to be protected.

[0451] Hereinafter, for the same structure as the electrode unit 81 of the third embodiment shown in Fig.42 the same reference numerals are given and the description is appropriately omitted, and the description will be centered on the characteristic portions of the electrode unit 91.

[0452] The dielectric protection film FC2 serving as a dielectric protection member covers the entire conductor film F7 serving as an electrode reinforcing conductive film and is disposed on the lower surface of the dielectric film F2 serving as a dielectric film for a first electrode. As described above, the high-voltage side electrode forming portion E13 has a laminated structure including the dielectric film F2, the conductor film F7, and the dielectric protection film FC, that is, a conductor film built-in laminated structure. In the conductor film built-in laminated structure, no gap is generated among the dielectric film F2, the conductor film F7, and the dielectric protection film FC.

[0453] Moreover, the space where the dielectric protection film FC2 faces the dielectric film F3 becomes the dielectric space 18, and the dielectric film to be protected in the seventh embodiment is the dielectric film F2.

[0454] The conductor film F7 has a planar shape that is larger than the high-voltage electrode F5 in plan view and smaller than the dielectric film F2 and the dielectric protection film FC2 in plan view. Further, the ground electrode F6 includes the conductor film F7 in plan view.

[0455] In the dielectric space 18, there is an area where the conductor film F7 and the ground electrode F6 overlap in plan view, which is the extended main discharge space. Thus, a relatively large discharge space 4e is formed. That is, the main discharge space in the electrode unit 91 of Embodiment 7 is extended to the extended main discharge space by the conductor film F7. Here, the extended main discharge space is the area where the conductor film F7 and the ground electrode F6 overlap in plan view within the dielectric space 18.

[0456] The electrode unit 91 further includes an AC power supply 15 that applies an AC voltage as an applied voltage between the high-voltage electrode F5 of the high-voltage side electrode forming portion E13 and the ground electrode F6 of the ground side electrode forming portion E20. Specifically, an AC voltage is applied to the high-voltage electrode F5, and the ground electrode F6 is set to a ground potential as a reference potential.

[0457] When the applied voltage is applied from the AC power supply 15, the electrode unit 91 of the basic mode of Embodiment 7 generates dielectric barrier discharge in the discharge space 4.

[0458] In Fig.53 In the electrode unit 91 of the basic mode shown, the supply mode of the source gas G1 to the discharge space 4 and the ejection mode of the active gas G2 are not particularly limited. For example, in Fig.53 the source gas G1 may also be supplied from the left side in the figure, and the active gas G2 may be ejected from the right side in the figure.

[0459] The active gas generation device of Embodiment 7 having the electrode unit 91 that is the basic mode can exhibit the same effects as the active gas generation device of Embodiment 3 having the electrode unit 81, and further exhibit the following inherent effects.

[0460] Figure 54 to Figure 56 It is an explanatory diagram for showing the effects of the active gas generation device of Embodiment 7. Fig.54 It is an explanatory diagram showing the discharge space 4 of the electrode unit 81 of the basic mode of Embodiment 3, Fig.55 It is an explanatory diagram showing the discharge space 4e of the electrode unit 91 of the basic mode of Embodiment 7, Fig.56 It is an explanatory diagram showing the discharge space 4e of the electrode unit 81X obtained by extending the electrode unit 81.

[0461] The formation area of the high-voltage electrode F5 is set to be the same between the electrode unit 81 and the electrode unit 91. Further, the formation area of the conductor film F7 and the formation area of the extended high-voltage electrode F5e are set to be the same between the electrode unit 91 and the electrode unit 81X.

[0462] Fig.56 The high-voltage side electrode constituting portion E11X in the electrode unit 81X shown includes the extended high-voltage electrode F5e, the dielectric film F2, and the dielectric protection film FC2. Further, in each of the electrode unit 81, the electrode unit 91, and the electrode unit 81X, the ground electrode F6 includes the high-voltage electrode F5, the conductor film F7, and the extended high-voltage electrode F5e in a plan view.

[0463] Fig.55 The discharge space 4e in the electrode unit 91 shown includes, within the dielectric space 18, a region where the conductor film F7 and the ground electrode F6 overlap in a plan view, that is, the extended main discharge space.

[0464] In the active gas generation device of the basic mode of Embodiment 7, the conductor film F7 as an electrode reinforcing conductive film is interposed between the dielectric protection film FC2 as a dielectric protection member and the dielectric film F2 as a first electrode dielectric film. The conductor film F7 has a shape characteristic of being larger than the high-voltage electrode F5 in a plan view.

[0465] For example, when the planar shapes of the high-voltage electrode F5 and the conductor film F7 are both circular, when the diameter of the high-voltage electrode F5 is set to dA (mm), the diameter of the conductor film F7 is set to (dA + 20 mm). Thus, the high-voltage electrode F5 has a shape characteristic of having a smaller formation area compared to the conductor film F7.

[0466] Therefore, the basic mode of the active gas generation device of Embodiment 7 is to expand the formation area of the conductor film F7 compared to the high-voltage electrode F5, and accordingly, a discharge space 4e including a relatively large volume of extended main discharge space can be obtained.

[0467] Hereinafter, this will be described in detail. As Fig.54 shown, the electrode unit 81 includes, within the dielectric space 18, a region where the high-voltage electrode F5 and the ground electrode F6 overlap in a plan view, that is, the main discharge space, to form the discharge space 4.

[0468] On the other hand, as Fig.55 shown, in the electrode unit 91 of Embodiment 7, the formation area of the conductor film F7 is expanded compared to the high-voltage electrode F5.

[0469] The electrode-enhanced conductive film, i.e., the conductor film F7, which has conductivity, has the property that its internal resistance is small enough and the internal potential is the same, so that an electric field capable of generating discharge can be generated from the conductor film F7. Therefore, the electrode unit 91 can form a relatively large discharge space 4e including the region where the conductor film F7 and the ground electrode F6 overlap in plan view, i.e., the extended main discharge space, within the dielectric space 18.

[0470] In addition, the film thickness of the conductor film F7 is set to, for example, 50 nm. The film thickness of the conductor film F7 is preferably set so as not to hinder the reduction of resistance and not to generate a gap between the dielectric film F2, the conductor film F7, and the dielectric protection film FC2 within the conductor film built-in laminated structure.

[0471] On the other hand, Fig.56 The shown electrode unit 81X forms a discharge space 4e equivalent to that of the electrode unit 91 by expanding the formation area of the extended high-voltage electrode F5e without providing the conductor film F7.

[0472] However, since the extended high-voltage electrode F5e is exposed to the outside, the electrode margin distance ΔF5 of the dielectric film support member M10 becomes shorter corresponding to the expansion of the formation area by the high-voltage electrode F5. Therefore, the possibility of a malfunction occurring between the extended high-voltage electrode F5e and the dielectric film support member M10 in the electrode unit 81X becomes high.

[0473] For example, when the dielectric film support member M10 is a conductor and is set to the ground level, when the electrode margin distance ΔF5 between the extended high-voltage electrode F5e and the dielectric film support member M10 is short, there is a possibility of short-circuiting between the dielectric film support member M10 and the extended high-voltage electrode F5e via surface discharge.

[0474] On the other hand, in the active gas generation device of the basic mode of Embodiment 7, since the conductor film F7 is provided within the conductor film built-in laminated structure, the possibility of electrical connection between the conductor film F7 and external component members such as the dielectric film support member M10 becomes "0".

[0475] Therefore, the active gas generation device of the basic mode of Embodiment 7 sets the formation area of the high-voltage electrode F5 to the required minimum and sets the electrode margin distance ΔF5 between the high-voltage electrode F5 and the dielectric film support member M10 to a sufficiently long distance, thereby being able to sufficiently suppress the possibility of malfunctions such as the above short-circuit.

[0476] In this way, the active gas generation device of the basic mode of Embodiment 7 can suppress the formation area of the high-voltage electrode F5 to the required minimum and generate dielectric barrier discharge in the discharge space 4e including a relatively large (extended) main discharge space.

[0477] In the active gas generation device of the basic mode of Embodiment 7, inside the laminated structure in the conductor film, no gap is generated between the dielectric film F2, the conductor film F7, and the dielectric protection film FC2. Therefore, a space where a discharge phenomenon occurs other than the discharge space 4e is not generated between the dielectric film F2 and the dielectric film F3, and the active gas G2 can be obtained with high precision.

[0478] The high-voltage side electrode forming portion E13 of the electrode unit 91 includes the conductor film F7 and the dielectric protection film FC2. The active gas generation device of the basic mode of Embodiment 7 having this electrode unit 91 applies an AC voltage between the high-voltage electrode F5 and the ground electrode F6 as the applied voltage by the AC power supply 15, whereby the raw material gas G1 supplied to the discharge space 4e in the dielectric space 18 can be activated to generate the active gas G2.

[0479] (Second mode)

[0480] Fig.57 It is an explanatory diagram showing a cross-sectional structure of the electrode unit 911 used in the active gas generation device of the second mode of Embodiment 7. Figure 58 It shows Figure 57 Details of the region of interest R4. In Figure 57 and Figure 58 the XYZ orthogonal coordinate system is described respectively.

[0481] Figure 57 The electrode unit 911 shown is the actual use structure in which the electrode unit 91 of the basic mode shown in Figure 53 is applied to the electrode unit 55 of Embodiment 2. In the electrode unit 911, the high-voltage side dielectric film 2 is used as the dielectric film F2, the ground side dielectric film 3 is used as the dielectric film F3, the power supply body 5 is used as the high-voltage electrode F5, and the conductor film F71 is used as the conductor film F7. In addition, a conductive film 7 ( Figure 20 , Figure 21 ) not shown is used as the ground electrode F6.

[0482] In this way, the active gas generation device of the actual use structure of the second mode of Embodiment 7 becomes an active gas generation device having the electrode unit 911.

[0483] The overall configuration of the second mode of the active gas generation device of Embodiment 7 is the same as that of the active gas generation device 71 shown in Figure 1 . Therefore, Figure 57 the electrode unit 911 shown corresponds to any one of the electrode units 51 to 53 in the active gas generation device 75 of the overall configuration shown in Figure 1 .

[0484] That is, the second mode in the active gas generation device of Embodiment 7 is the same as the active gas generation device 71 of Embodiment 1, and includes electrode units 51 to 53 as a plurality of electrode units, and a housing 1 that houses the electrode units 51 to 53 in the inner space S1 of the housing (refer to Figure 8 ) and has conductivity.

[0485] Hereinafter, for the same structure as the electrode unit 50 (51 to 53) of Embodiment 1, the same structure as the electrode unit 55 of Embodiment 2, or the same structure as the electrode unit 831 of Embodiment 5, the same reference numerals are given and the description is appropriately omitted, and the description will be centered on the characteristic part of the electrode unit 911.

[0486] As Figure 57 shown, the electrode unit 911 is the same as the electrode unit 50 (51 to 53) of Embodiment 1. The lower surface of the high-voltage side dielectric film 2 has a recess bottom surface 26 and a convex bottom surface 23 provided on the periphery of the recess bottom surface. The formation position of the convex bottom surface 23 is set higher than that of the recess bottom surface 26 in the height direction along the +Z direction. A conductor film F7 and a dielectric protective film FC2 are provided on the recess bottom surface 26, and the conductor film F7 and the dielectric protective film FC2 are not provided on the convex bottom surface 23.

[0487] The electrode unit 911 includes a dielectric film support member 10B, and the dielectric film support member 10B has a support surface 10F that serves as a dielectric support surface for supporting the convex bottom surface 23 of the high-voltage side dielectric film 2 from below.

[0488] As Figure 57 shown, the dielectric film support member 10B further has a fixing auxiliary surface 10XF that serves as a protection member fixing auxiliary surface, and the fixing auxiliary surface 10XF is disposed below the peripheral region of the dielectric protective film FC2 provided on the recess bottom surface 26 of the high-voltage side dielectric film 2.

[0489] The electrode unit 911 is the same as the electrode units 50 and 55, and has a dielectric film pressing member 11 that presses the first electrode dielectric film, that is, the high-voltage side dielectric film 2, from above. The dielectric film pressing member 11 does not overlap with the power supply body 5 in a top view.

[0490] In the dielectric film support member 10B, an O-ring 17 that functions as an elastic member is inserted between the fixing auxiliary surface 10XF that serves as a protection member fixing auxiliary surface and the lower surface of the dielectric protective film FC2. In addition, a conductor film F71 is not formed in the region that overlaps with the fixing auxiliary surface 10XF in a top view. Therefore, the recess bottom surface 26 of the high-voltage side dielectric film 2 and the upper surface of the dielectric protective film FC2 are set to be in a close contact state by the elastic force of the O-ring 17. Hereinafter, this will be described in detail.

[0491] In Figure 57 this, the O-ring 17 is deformed by being sandwiched between the dielectric film support member 10B and the high-voltage side dielectric film 2 with the dielectric protective film FC2 interposed therebetween. Due to the elastic force of the O-ring 17 functioning as an elastic member, the upper surface of the dielectric protective film FC2 is in close contact with the lower surface of the high-voltage side dielectric film 2 where the conductor film F71 is not formed.

[0492] The electrode unit 911 used in the second mode of Embodiment 7 exhibits the same effects as the second mode of Embodiment 3 and the basic mode of Embodiment 7. Moreover, it exhibits the following inherent effects.

[0493] In addition, a conductor film built-in laminated structure composed of the high-voltage side dielectric film 2 (dielectric film F2), the conductor film F71 (conductor film F7), and the dielectric protective film FC2 can be obtained, for example, by the following first and second manufacturing methods.

[0494] The first manufacturing method is a manufacturing method including steps S11 to S14, and steps S11 to S14 are shown below.

[0495] S11... A conductor film F71 is formed on the upper surface of the dielectric protective film FC2 to obtain Figure 58 the dielectric protective film FCE with a conductor film (a combined structure of the dielectric protective film FC2 and the conductor film F71) shown. In addition, a sputtering method or an ion plating technique is used as a method for forming the conductor film F7 on the dielectric protective film FC2.

[0496] S12... The dielectric protective film FCE with a conductor film is disposed on the fixing auxiliary surface 10XF of the dielectric film support member 10B with the O-ring 17 interposed therebetween. In the dielectric protective film FCE with a conductor film, the conductor film F7 is not formed above the fixing auxiliary surface 10XF.

[0497] S13... The high-voltage side dielectric film 2 is disposed on the support surface 10F of the dielectric film support member 10B.

[0498] S14... A dielectric film pressing member 11 for pressing the high-voltage side dielectric film 2 from above is provided.

[0499] After step S14 is executed, due to the elastic force of the O-ring 17 functioning as an elastic member, the upper surface of the conductor film F71 and the upper surface of the dielectric protective film FC2 (where the conductor film F71 is not provided) are in close contact with the lower surface of the high-voltage side dielectric film 2.

[0500] Thus, through the first manufacturing method including steps S11 to S14, a stacked structure with a conductor film embedded therein can be obtained without generating gaps inside. Additionally, in order to form the conductor film F71 in step S11 with high precision, it is preferable to improve the flatness of the upper surface of the dielectric protective film FC2 by polishing or the like. For example, when the film thickness of the conductor film F71 is set to 20 nm, it is preferable to set the surface roughness of the upper surface of the dielectric protective film FC2 to 20 nm or less.

[0501] The second manufacturing method is a method including steps S21 to S24, and steps S21 to S24 are shown below.

[0502] S21… A conductor film F7 is formed on the lower surface of the high-voltage-side dielectric film 2 to obtain Figure 58 the dielectric film F2E with a conductor film (a combined structure of the dielectric film F2 and the conductor film F7) shown. Additionally, a sputtering method or an ion plating technique is used as the method for forming the conductor film F7 on the high-voltage-side dielectric film 2.

[0503] S22… The dielectric protective film FC2 is disposed on the fixed auxiliary surface 10XF of the dielectric film support member 10B with an O-ring 17 interposed therebetween. In the dielectric film F2E with a conductor film, no conductor film F7 is formed above the fixed auxiliary surface 10XF.

[0504] S23… The dielectric film F2E with a conductor film is disposed on the support surface 10F of the dielectric film support member 10B. No conductor film F7 is formed on the lower surface of the dielectric film F2E with a conductor film disposed on the support surface 10F.

[0505] S24… A dielectric film pressing member 11 for pressing the dielectric film F2E with a conductor film from above is provided.

[0506] After step S24 is executed, due to the elastic force of the O-ring 17 that functions as an elastic member, the upper surface of the dielectric protective film FC2 is in close contact with the lower surface of the conductor film F7 and the lower surface of the high-voltage-side dielectric film 2 (where the conductor film F7 is not provided).

[0507] Thus, through the second manufacturing method including steps S21 to S24, a stacked structure with a conductor film embedded therein can be obtained without generating gaps inside. Additionally, in order to form the conductor film F7 in step S21 with high precision, it is preferable to improve the flatness of the lower surface of the high-voltage-side dielectric film 2 by polishing or the like. For example, when the film thickness of the conductor film F71 is set to 20 nm, it is preferable to set the surface roughness of the lower surface of the high-voltage-side dielectric film 2 to 20 nm or less.

[0508] The electrode unit 911 does not need to change the constituent materials of the high-voltage side dielectric film 2 and the ground-side dielectric film 3 compared with the prior art. The main changes compared with the electrode unit 55 lie in the improvement from the dielectric film support member 10 to the dielectric film support member 10B and the degree of addition of the conductor film F7 and the dielectric protection film FC2. Therefore, the manufacturing process of the electrode unit 911 including the above first manufacturing method or the second manufacturing method will not be complicated.

[0509] In the second mode of the active gas generation device of Embodiment 7, the dielectric film support member 10B of the electrode unit 911 supports the bottom surface 23 of the convex portion of the ground-side dielectric film 3 from below through the support surface 10F that serves as the dielectric support surface. Moreover, the bottom surface 26 of the concave portion of the high-voltage side dielectric film 2 and the upper surface of the dielectric protection film FC2 are set to be in close contact with each other by the elastic force of the O-ring 17 that functions as an elastic member.

[0510] Therefore, the second mode of the active gas generation device of Embodiment 7 can stably fix the conductor film built-in laminated structure with good stability by providing a relatively simple structure such as the dielectric film support member 10B and the O-ring 17.

[0511] In addition, by suppressing the area of the power supply body 5 that serves as the first electrode conductive film to the minimum required, it is possible to ensure a sufficient insulation distance between it and the dielectric film pressing member 11.

[0512] Therefore, the second mode of the active gas generation device of Embodiment 7 can obtain a structure that reliably avoids possible problems that may occur between the power supply body 5 and the dielectric film pressing member 11.

[0513] In addition, in the second mode of the active gas generation device of Embodiment 7, by utilizing the elastic force of the O-ring 17, it is possible to improve the close contact accuracy between the bottom surface 26 of the concave portion of the high-voltage side dielectric film 2 and the upper surface of the dielectric protection film FC2 with a relatively simple structure.

[0514] Moreover, in the second mode of the active gas generation device of Embodiment 7 having the Figure 57 shown electrode unit 911, the plurality of gas ejection ports 70 have the same characteristics as the electrode unit 55 of Embodiment 2 and the electrode unit 811 of the second mode of Embodiment 3. That is, the plurality of gas ejection ports 70 are arranged so as to approach each other as they face downward, so that a plurality of partial active gases collide in the collision region 80, and the collision region 80 is located within the lower conical region 41t (refer to Figure 36 and Figure 37 ) or at a position above the lower conical region 41t.

[0515] Therefore, the second mode of the active gas generation device according to Embodiment 7 is the same as the active gas generation device according to Embodiment 2 and the second mode according to Embodiment 3, and can supply uniform active gas G2 to the subsequent processing space.

[0516] <Embodiment 8>

[0517] Figure 59 It is an explanatory diagram showing a cross-sectional structure of an active gas generation device according to the first and second modes of Embodiment 8. Figure 60 It is for the first mode of Embodiment 8 Figure 59 Explanatory diagram of the detailed structure of the region of interest R5. Figure 61 It is for the second mode of Embodiment 8 Figure 59 Explanatory diagram of the detailed structure of the region of interest R5. In Figures 59 - 61 The XYZ orthogonal coordinate system is respectively described.

[0518] Figure 59 The electrode unit 931 shown is the actual use structure corresponding to the electrode unit 831 of Embodiment 5 shown in Figure 49

[0519] In addition, the basic mode of Embodiment 8 corresponding to the first mode has the following structure: In the electrode unit 83 shown in Figure 47 A conductor film F7 is provided on the lower surface of the dielectric film F2, and a protection member space 40 is provided between the lower surface of the conductor film F7 and the upper surface of the dielectric protection film FC4.

[0520] In addition, the basic mode of Embodiment 8 corresponding to the second mode has the following structure: In the electrode unit 83 shown in Figure 47 A conductor film F7 is provided on the upper surface of the dielectric protection film FC4, and a protection member space 40 is provided between the upper surface of the conductor film F7 and the lower surface of the dielectric film F2.

[0521] In the electrode unit 931, the high-voltage side dielectric film 2 is used as the dielectric film F2, the grounded side dielectric film 3 is used as the dielectric film F3, the power supply body 5 is used as the high-voltage electrode F5, the conductor film F72 (first mode) or the conductor film F73 (second mode) is used as the conductor film F7, and the dielectric film support member 10C is used as the dielectric film support member M10 shown in Figure 48 In addition, a conductive film 7 ( Figure 20 , Figure 21 ) is used as the ground electrode F6. In addition, the conductor film F72 is shown in Figure 59

[0522] In this way, the active gas generating devices according to the first and second aspects of the eighth embodiment are active gas generating devices including the electrode unit 931 .

[0523] The overall structure of the first and second aspects of the active gas generating device of the eighth embodiment is the same as Figure 1 The active gas generating device 71 shown in FIG. Figure 59 The electrode unit 931 shown corresponds to Figure 1 Any one of the electrode units 51 to 53 in the active gas generating device 75 having the overall structure shown.

[0524] That is, the first and second aspects of the active gas generating device of the eighth embodiment are similar to the active gas generating device 71 of the first embodiment, and include the electrode units 51 to 53 as a plurality of electrode units, and the space S1 (see Figure 8 ) A housing 1 that accommodates the electrode units 51 to 53 and has conductivity.

[0525] Hereinafter, the same reference numerals are used for the same structure as the electrode unit 50 (51 to 53) of Embodiment 1, the same structure as the electrode unit 55 of Embodiment 2, or the electrode unit 831 of Embodiment 5, and the description is omitted as appropriate, with the description focusing on the characteristic parts of the electrode unit 931.

[0526] like Figure 59 As shown, the electrode unit 931 is the same as the electrode unit 50 (51 to 53) of the first embodiment, and the lower surface of the high-voltage side dielectric film 2 has a concave bottom surface 26 and a convex bottom surface 23 provided around the concave bottom surface. The convex bottom surface 23 is formed at a higher position in the height direction along the +Z direction than the concave bottom surface 26.

[0527] exist Figure 60 In the first embodiment shown, a conductor film F72 is provided on the lower surface of the recessed bottom surface 26 , a dielectric protection film FC4 is provided below the conductor film F72 with a protection member space 40 therebetween, and the conductor film F72 and the dielectric protection film FC4 are not provided on the raised bottom surface 23 .

[0528] So, in Figure 60 In the first embodiment shown, the dielectric protection film FC4 is arranged on the lower surface side of the high-voltage side dielectric film 2 and the conductor film F72 via a protection member space 40 having a minute gap length Δ40.

[0529] Therefore, in the first embodiment of the electrode unit 931 , the high-voltage electrode configuration portion E14 includes the dielectric protection film FC4 , the protection member space 40 , the conductor film F72 , the high-voltage dielectric film 2 , and the power supply 5 in this order along the height direction (+Z direction).

[0530] On the other hand, in Figure 61 the second mode shown in Figure 61 , a dielectric protection film with a conductor film FCE having a combined structure of a conductor film F73 and a dielectric protection film FC4 is provided below the bottom surface 26 of the concave portion with a protection member space 40 interposed therebetween, and the conductor film F73 and the dielectric protection film FC4 are not provided on the bottom surface 23 of the convex portion.

[0531] Thus, in Figure 61 the second mode shown in Figure 61 , the dielectric protection film with a conductor film FCE having a combined structure of a conductor film F73 and a dielectric protection film FC4 is disposed on the lower surface side of the high-voltage side dielectric film 2 with a protection member space 40 having a minute gap length Δ40 interposed therebetween.

[0532] Therefore, in the high-voltage side electrode forming portion E15 in the second mode of the electrode unit 931, the dielectric protection film FC4, the conductor film F73, the protection member space 40, the high-voltage side dielectric film 2, and the power supply body 5 are sequentially disposed along the height direction (+Z direction).

[0533] Hereinafter, when the first mode shown in Figure 60 and the second mode shown in Figure 61 are generically referred to, they may be referred to as "the actual structure of Embodiment 8" or simply as "Embodiment 8".

[0534] In the actual structure of Embodiment 8, a discharge space 4e with a gap length Δ4 is formed between the dielectric protection film FC4 and the ground side dielectric film 3. In addition, a power supply body 5 is provided on the upper surface of the high-voltage side dielectric film 2, and a ground conductor 60 is provided on the lower surface side of the ground side dielectric film 3.

[0535] Figure 59 and Figure 60 the active gas generation device of the first mode of Embodiment 8 shown in has the following characteristics.

[0536] The conductor film F72 as an electrode reinforcing conductive film is closely attached to the lower surface of the high-voltage side dielectric film 2 as a first electrode dielectric film.

[0537] The dielectric protection film FC4 as a dielectric protection member is provided below the conductor film F72. The dielectric protection film FC4 entirely includes the conductor film F72 in a top view, and a protection member space 40 is provided between the dielectric protection film FC4 and the conductor film F72. In addition, a part of the protection member space 40 where the conductor film F72 is not formed becomes the space between the dielectric protection film FC4 and the high-voltage side dielectric film 2.

[0538] The space where the dielectric protective film FC4 faces the ground-side dielectric film 3 serving as the dielectric film for the second electrode forms a dielectric space 18, and the dielectric film to be protected is the high-voltage side dielectric film 2.

[0539] The high-voltage side electrode forming portion E14 serving as the first electrode forming portion is characterized by further including a dielectric protective film FC4 and a conductor film F72.

[0540] An AC power supply 15 that applies an applied voltage VP between the power supply body 5 of the high-voltage side electrode forming portion E14 and the ground conductor 6 of the ground-side electrode forming portion E20 is further provided, and a dielectric barrier discharge is generated in the discharge space 4e when the applied voltage is applied from the AC power supply 15.

[0541] The conductor film F72 has a planar shape that is larger than the power supply body 5 in a plan view and smaller than the high-voltage side dielectric film 2 in a plan view, and the ground conductor 6 includes the conductor film F72 therein in a plan view.

[0542] The discharge space 4e includes, within the dielectric space 18, a region where the conductor film F72 and the ground conductor 6 overlap in a plan view, that is, an extended main discharge space.

[0543] The applied voltage from the AC power supply 15, the discharge space 4e, and the protection member space 40 are set to satisfy the discharge generation requirements of generating a dielectric barrier discharge in the discharge space 4e when the applied voltage is applied and not generating a dielectric barrier discharge in the protection member space 40.

[0544] On the other hand, Figure 59 and Figure 61 The active gas generation device of the second mode of Embodiment 8 shown has the following characteristics.

[0545] The conductor film F73 serving as an electrode reinforcing conductive film is closely arranged on the upper surface of the dielectric protective film FC4, and the dielectric protective film FC4 includes all of the conductor film F73 therein in a plan view.

[0546] A protection member space 40 is provided between the conductor film F73 and the high-voltage side dielectric film 2. In addition, a part of the protection member space 40 where the conductor film F73 is not formed becomes the space between the dielectric protective film FC4 and the high-voltage side dielectric film 2.

[0547] In addition, the space where the dielectric protective film FC4 faces the ground-side dielectric film 3 forms a dielectric space 18, and the dielectric film to be protected is the high-voltage side dielectric film 2.

[0548] The high-voltage side electrode forming portion E15 is characterized by further including a dielectric protective film FC4 and a conductor film F73.

[0549] There is also an AC power supply 15 that applies an applied voltage between the power supply body 5 of the high-voltage side electrode forming portion E15 and the ground conductor 6 of the ground side electrode forming portion E20, and a dielectric barrier discharge is generated in the discharge space 4e when the AC power supply 15 applies the applied voltage.

[0550] The conductor film F73 has a planar shape that is larger than the power supply body 5 in a top view and smaller than the high-voltage side dielectric film 2 and the dielectric protection film FC4 in a top view, and the ground conductor 6 includes the conductor film F73 in a top view.

[0551] In the dielectric space 18, a discharge space 4e is formed including an area where the conductor film F73 and the ground conductor 6 overlap in a top view, that is, an extended main discharge space.

[0552] The applied voltage of the AC power supply 15, the discharge space 4e, and the protection member space 40 are set to satisfy the discharge generation requirements that a dielectric barrier discharge is generated in the discharge space 4e when the applied voltage is applied and no dielectric barrier discharge is generated in the protection member space 40.

[0553] In order to satisfy the above discharge generation requirements, the electrode unit 931 of Embodiment 8 sets the gap length Δ40 that is the discharge distance of the protection member space 40 to be sufficiently short compared to the gap length Δ4 that is the discharge distance of the discharge space 4e. This feature is the same in the first and second modes.

[0554] As Figure 59 shown, the dielectric film support member 10C also has a support surface 10YF that serves as a protection member support surface for supporting the peripheral region of the dielectric protection film FC4 from below.

[0555] Therefore, by supporting the peripheral region of the dielectric protection film FC4 from below by the support surface 10YF, the position in the height direction along the Z direction of the dielectric protection film FC4 can be fixed.

[0556] In addition, in Figure 61 the case of the second mode shown, the support surface 10YF supports the peripheral region of the combined structure of the conductor film F73 and the dielectric protection film FC4, that is, the dielectric protection film FCE with a conductor film, from below.

[0557] In the dielectric film support member 10C, the support surface 10F that is the dielectric support surface is formed at a higher position in the height direction than the support surface 10YF that is the protection member support surface, and the difference value Δd in the height direction between the support surface 10F and the support surface 10YF is set to form a protection member space 40 with a gap length Δ40 between the lower surface of the high-voltage side dielectric film 2 and the upper surface of the dielectric protection film FC4.

[0558] For example, the dielectric protection film FC4 has a uniform film thickness dC4, and the conductor films F72 and F73 both have a uniform film thickness d7. When the length of the bottom surface 26 of the concave portion in the depth direction from the bottom surface 23 of the convex portion in the -Z direction is set as the protruding length t26, the difference value Δd is set to a length satisfying {Δd = dC4 + d7 + t26 + Δ40}. At this time, the gap length Δ40 of the protection member space 40 needs to be set to be sufficiently shorter than the gap length Δ4 of the discharge space 4 in order to satisfy the above-mentioned discharge generation requirements. In addition, since the film thickness d7 of the conductor films F72 and F73 is sufficiently thin, the gap length between the dielectric protection film FC4 forming a part of the protection member space 40 and the high-voltage side dielectric film 2 also becomes of the same level as the gap length Δ40.

[0559] Figure 59 and Figure 60 The first mode of the electrode unit 931 shown, for example, can be obtained by the following third manufacturing method. The third manufacturing method is a manufacturing method including steps S31 to S34 shown below.

[0560] S31... A conductor film F72 is formed on the lower surface of the high-voltage side dielectric film 2 to obtain Figure 60 the dielectric film F2E with a conductor film shown.

[0561] S32... The dielectric protection film FC2 is disposed on the support surface 10YF of the dielectric film support member 10C. No conductor film F7 is formed on the lower surface of the dielectric film F2E with a conductor film disposed on the support surface 10F.

[0562] S33... The dielectric film F2E with a conductor film is disposed on the support surface 10F of the dielectric film support member 10C. No conductor film F72 is formed on the lower surface of the dielectric film F2E with a conductor film disposed on the support surface 10F.

[0563] S34... A dielectric film pressing member 11 for pressing the dielectric film F2E with a conductor film from above is provided.

[0564] After step S34 is executed, a protection member space 40 is formed between the upper surface of the dielectric protection film FC4, the lower surface of the conductor film F72, and the lower surface of the high-voltage side dielectric film 2 (where no conductor film F72 is formed).

[0565] In this way, by the third manufacturing method including steps S31 to S34, the first mode of the electrode unit 931 having the high-voltage side electrode formation portion E14 can be obtained.

[0566] Figure 59 and Figure 61 The second mode of the electrode unit 931 shown, for example, can be obtained by the following fourth manufacturing method. The fourth manufacturing method is a manufacturing method including steps S41 to S44 shown below.

[0567] S41…A conductor film F73 is formed on the upper surface of the dielectric protection film FC2 to obtain Figure 61 the dielectric protection film FCE with a conductor film as shown.

[0568] S42…The dielectric protection film FCE with a conductor film is disposed on the support surface 10YF of the dielectric film support member 10C. In the dielectric protection film FCE with a conductor film, no conductor film F7 is formed above the support surface 10YF.

[0569] S43…The high-voltage side dielectric film 2 is disposed on the support surface 10F of the dielectric film support member 10C.

[0570] S44…A dielectric film pressing member 11 for pressing the high-voltage side dielectric film 2 from above is provided.

[0571] After step S44 is executed, a protection member space 40 is formed between the upper surface of the conductor film F73 of the dielectric protection film FCE with a conductor film and the upper surface of the dielectric protection film FC2 (where the conductor film F73 is not formed), and the high-voltage side dielectric film 2.

[0572] The active gas generation device of the electrode unit 931 having the actual structure of Embodiment 8 exhibits the same effects as Figures 47 - 51 the active gas generation device of Embodiment 5 as shown, and also exhibits the following inherent effects.

[0573] In the active gas generation device of Embodiment 8, a conductor film F72 or a conductor film F73 serving as an electrode reinforcing conductive film is provided between the dielectric protection film FC4 serving as a dielectric protection member and the high-voltage side dielectric film 2 (dielectric film F2) serving as a first electrode dielectric film. The conductor film F72 or the conductor film F73 has a shape characteristic that is larger than that of the power supply body 5 (high-voltage electrode F5) serving as a first electrode conductive film in a top view.

[0574] Therefore, in the active gas generation device of Embodiment 8, the formation area of the conductor film F72 or the conductor film F73 is expanded compared with the power supply body 5, and accordingly, a discharge space 4e including a larger volume of an extended main discharge space can be obtained.

[0575] Thus, in the active gas generation device of Embodiment 8, the formation area of the power supply body 5 is suppressed to the required minimum, and dielectric barrier discharge can be generated in a relatively large discharge space 4e including the extended main discharge space.

[0576] In the first mode of the active gas generation device according to Embodiment 8, there is a protection member space 40 between the dielectric protection film FC4, which is a dielectric protection member, and the conductor film F72, which is an electrode reinforcing conductive film. Therefore, it is not necessary to bring the dielectric protection film FC4 into close contact with the conductor film F72 or the high-voltage side dielectric film 2. Accordingly, simplification of the device configuration can be achieved.

[0577] On the other hand, in the second mode of the active gas generation device according to Embodiment 8, there is a protection member space 40 between the conductor film F73 and the high-voltage side dielectric film 2. Therefore, it is not necessary to bring the dielectric protection film FC4 into close contact with the high-voltage side dielectric film 2. Accordingly, simplification of the device configuration can be achieved.

[0578] In addition, in the active gas generation device according to Embodiment 8, by setting the gap length Δ40 of the protection member space 40 to be sufficiently shorter than the gap length Δ4 of the discharge space 4e, the applied voltage, the discharge space 4, and the protection member space 40 that satisfy the above-described discharge generation requirements can be set relatively easily.

[0579] As a result, the active gas generation device according to Embodiment 8 can obtain the active gas G2 with high precision without generating a space where a discharge phenomenon occurs other than the discharge space 4e between the dielectric film 2 (F2) and the dielectric film 3 (F3).

[0580] The high-voltage side electrode forming portion E14 of the first mode of the electrode unit 931 includes the dielectric protection film FC4, and the applied voltage applied between the dielectric films F2 and F3 in the electrode unit 931 satisfies the above-described discharge generation requirements.

[0581] Therefore, in the first mode of the active gas generation device according to Embodiment 8 having the electrode unit 931, dielectric barrier discharge does not occur in the protection member space 40 formed between the dielectric protection film FC4 and the conductor film F72, while dielectric barrier discharge occurs in the relatively large discharge space 4e that extends the main discharge space between the dielectric protection film FC4 and the dielectric film 3 (F3).

[0582] On the other hand, the high-voltage side electrode forming portion E15 of the second mode of the electrode unit 931 includes the dielectric protection film FC4, and the applied voltage applied between the dielectric films F2 and F3 in the electrode unit 931 satisfies the above-described discharge generation requirements.

[0583] Therefore, in the second mode of the active gas generation device according to Embodiment 8, dielectric barrier discharge does not occur in the protection member space 40 formed between the high-voltage side dielectric film 2 and the conductor film F73, while dielectric barrier discharge occurs in the relatively large discharge space 4e that extends the main discharge space between the dielectric protection film FC4 and the dielectric film 3 (F3).

[0584] As a result, the active gas generation device of Embodiment 8 activates the source gas G1 supplied to the relatively large discharge space 4e to generate the active gas G2.

[0585] Moreover, in the electrode unit 931 of the active gas generation device of Embodiment 8, the dielectric film support member 10C supports the peripheral region of the high-voltage side dielectric film 2 from below through the support surface 10F serving as a dielectric support surface, and supports the peripheral region of the dielectric protection film FC4 from below through the support surface 10YF serving as a protection member support surface.

[0586] In addition, in the electrode unit 931, the difference value Δd between the support surface 10F and the support surface 10YF is set such that a protection member space 40 with a gap length Δ40 is formed in a part between the lower surface of the high-voltage side dielectric film 2 and the upper surface of the dielectric protection film FC4.

[0587] Therefore, the active gas generation device of Embodiment 8 can stably fix the dielectric protection film FC4 having the protection member space 40 between it and the high-voltage side dielectric film 2 or the dielectric protection film FCE with a conductor film (a combined structure of the conductor film F73 and the dielectric protection film FC4) with good stability.

[0588] Moreover, Figures 59 - 61 The plurality of gas ejection ports 70 in the active gas generation device of Embodiment 8 having the electrode unit 931 shown have the same characteristics as the electrode unit 55 of Embodiment 2 or the electrode unit 831 of Embodiment 5. That is, the plurality of gas ejection ports 70 are arranged so as to approach each other as they face downward, so that a plurality of partial active gases collide in the collision region 80, and the collision region 80 exists in the lower conical region 41t (refer to Figure 36 and Figure 37 ) or at a position above the lower conical region 41t.

[0589] As a result, the active gas generation device of Embodiment 8, like the electrode unit 55 of Embodiment 2 and the electrode unit 831 of Embodiment 5, can supply the uniform active gas G2 to the subsequent processing space.

[0590] <Others>

[0591] The present invention has been described in detail, but the above description is illustrative in all aspects, and the present invention is not limited thereto. It should be understood that countless variations that are not illustrated can be conceived without departing from the scope of the present invention.

[0592] For example, in Embodiment 2, a plurality of partial active gases collide in one collision region 80, but a plurality of partial active gases may selectively collide in two or more collision regions.

[0593] In addition, regarding Embodiments 3 to 6, an active gas generation device having the following first and second improved electrode units can be considered.

[0594] The structure of the first improved electrode unit is such that, as a combined structure of electrode unit 81 and electrode unit 84, it has the dielectric protective film FC2 of Embodiment 3 and the dielectric protective film FC5 of Embodiment 6.

[0595] The structure of the second improved electrode unit is such that, as a combined structure of electrode unit 82 and electrode unit 83, it has the dielectric protective film FC3 of Embodiment 4 and the dielectric protective film FC4 of Embodiment 5.

[0596] That is, within the scope of its disclosure, the present invention enables the free combination of each embodiment, or appropriate deformation and omission of each embodiment.

[0597] Explanation of reference symbols

[0598] 1 housing

[0599] 2 high-voltage side dielectric film

[0600] 3 ground side dielectric film

[0601] 4, 4e discharge space

[0602] 5 power supply body

[0603] 6, 60 ground conductor

[0604] 7 conductive film

[0605] 8 cover dielectric film

[0606] 9 shielding dielectric film

[0607] 10, 10B, 10C, M10 dielectric film support member

[0608] 11 dielectric film pressing member

[0609] 12 pressing member

[0610] 13 buffer conductor

[0611] 15 AC power supply

[0612] 21 gas flow path

[0613] 22 cooling path

[0614] 40 protection member space

[0615] 41 housing opening

[0616] 41a upper region

[0617] Conical area below 41t

[0618] Electrode units 50, 51 - 53, 55, 81 - 84, 91, 810, 811, 830, 831, 911, 931

[0619] Raw material gas buffer space 61

[0620] Slit space 62

[0621] Side space 63

[0622] Buffer space 68 for active gas

[0623] Gas ejection ports 69, 70

[0624] Active gas generation devices 71, 75

[0625] Collision area 80

[0626] High - voltage side electrode forming parts E1, E10 - E15

[0627] Ground - side electrode forming parts E2, E20 - E22

[0628] Dielectric films F2, F3

[0629] High - voltage electrodes F5, F6

[0630] Conductor films F7, F71 - F73

[0631] Dielectric protective films FC2 - FC5

Claims

1. An active gas generating device comprising an electrode unit for activating a raw material gas supplied to a discharge space to generate an active gas, characterized in that: The electrode unit comprises: a first electrode forming unit; and A second electrode forming part is arranged below the first electrode forming part, The first electrode component includes a first electrode dielectric film and a first electrode conductive film provided on an upper surface of the first electrode dielectric film. The second electrode forming part includes a second electrode dielectric film and a second electrode conductive film provided on a lower surface of the second electrode dielectric film. A dielectric space is provided between the first electrode dielectric film and the second electrode dielectric film, The discharge space includes a main discharge space in the dielectric space, which is a region where the first and second electrode conductive films overlap in a plan view. The electrode unit also has: a dielectric protection member provided on the dielectric space side relative to at least one of the first electrode dielectric film and the second electrode dielectric film, that is, the dielectric film to be protected; The material constituting the dielectric protection member has a protection property of shielding ions generated by the dielectric barrier discharge from irradiating the dielectric film to be protected and not chemically reacting with the ions when the dielectric barrier discharge is generated in the discharge space.

2. The active gas generating device according to claim 1, wherein: The dielectric protection member is provided in close contact with the dielectric film to be protected without any gap.

3. The active gas generating device according to claim 2, wherein: The dielectric protection member is closely disposed on the lower surface of the first electrode dielectric film, and a space where the dielectric protection member and the second electrode dielectric film face each other becomes the dielectric space. The dielectric film to be protected is the dielectric film for the first electrode, The first electrode forming part further includes the dielectric protection member, The active gas generating device further includes a power source for applying a voltage between the first electrode conductive film of the first electrode forming part and the second electrode conductive film of the second electrode forming part. The dielectric barrier discharge is generated in the discharge space upon application of the applied voltage.

4. The active gas generating device according to claim 1, wherein: further comprising an electrode reinforcing conductive film provided on the lower surface of the first electrode dielectric film, The dielectric protection member covers the entire electrode reinforcing conductive film and is disposed on the lower surface of the first electrode dielectric film, and a stacked structure is provided in the order of the first electrode dielectric film, the electrode reinforcing conductive film, and the dielectric protection member without a gap, The space where the dielectric protection member and the second electrode dielectric film face each other is the dielectric space. The dielectric film to be protected is the dielectric film for the first electrode, The first electrode component further includes the dielectric protection member and the electrode reinforcing conductive film. The active gas generating device further includes a power source for applying a voltage between the first electrode conductive film of the first electrode forming part and the second electrode conductive film of the second electrode forming part. generating the dielectric barrier discharge in the discharge space when the applied voltage is applied, The electrode reinforcing conductive film has a planar shape that is larger than the first electrode conductive film in a plan view and smaller than the first electrode dielectric film in a plan view, and the second electrode conductive film includes the electrode reinforcing conductive film in a plan view. The discharge space includes, in the dielectric space, an extended main discharge space where the electrode reinforcing conductive film and the second electrode conductive film overlap in a plan view.

5. The active gas generating device according to claim 3, wherein: The lower surface of the first electrode dielectric film has a concave bottom surface and a convex bottom surface provided around the concave bottom surface, the convex bottom surface is formed at a higher position in the height direction than the concave bottom surface, the dielectric protection member is provided on the concave bottom surface, and the dielectric protection member is not provided on the convex bottom surface, The electrode unit also has: a dielectric film supporting member having a dielectric supporting surface supporting the bottom surface of the protrusion of the first electrode dielectric film from below; and a dielectric film pressing member for pressing the first electrode dielectric film from above, The dielectric film pressing member does not overlap with the first electrode conductive film in a plan view. The dielectric film supporting member further includes a protective member fixing auxiliary surface arranged below the dielectric protective member provided on the bottom surface of the recessed portion, The electrode unit further includes an elastic member inserted between the protective member fixing auxiliary surface and the lower surface of the dielectric protective member, and the bottom surface of the recess of the first electrode dielectric film and the upper surface of the dielectric protective member are set in close contact with each other by the elastic force of the elastic member.

6. The active gas generating device according to claim 4, characterized in that: The lower surface of the first electrode dielectric film has a concave bottom surface and a convex bottom surface provided around the concave bottom surface, the convex bottom surface is formed at a higher position in the height direction than the concave bottom surface, the electrode reinforcing conductive film and the dielectric protection member are provided on the concave bottom surface, and the electrode reinforcing conductive film and the dielectric protection member are not provided on the convex bottom surface, The electrode unit also has: a dielectric film supporting member having a dielectric supporting surface supporting the bottom surface of the protrusion of the first electrode dielectric film from below; and a dielectric film pressing member for pressing the first electrode dielectric film from above, The dielectric film pressing member does not overlap with the first electrode conductive film in a plan view. The dielectric film supporting member further includes a protective member fixing auxiliary surface arranged below the dielectric protective member provided on the bottom surface of the recessed portion, The electrode reinforcing conductive film is not formed in a region overlapping with the protective member fixing auxiliary surface in a plan view, The electrode unit further includes an elastic member inserted between the protective member fixing auxiliary surface and the lower surface of the dielectric protective member, and the bottom surface of the recess of the first electrode dielectric film and the upper surface of the dielectric protective member are set in close contact with each other by the elastic force of the elastic member.

7. The active gas generating device according to claim 5 or 6, characterized in that: The bottom surface of the recessed portion is formed into a circular shape when viewed from above. The bottom surface of the convex portion is formed in a circular ring shape around the bottom surface of the concave portion in a plan view, The protection member fixing auxiliary surface of the dielectric film supporting member is formed in a circular ring shape in a plan view, The dielectric film support member comprises: A groove portion is provided in the protective member fixing auxiliary surface in a circular ring shape when viewed from above; and The O-ring is disposed in the groove and has a circular ring shape when viewed from above. The elastic component is an O-ring.

8. The active gas generating device according to claim 2, wherein: The dielectric protection member is closely disposed on the upper surface of the second electrode dielectric film, and a space where the first electrode dielectric film and the dielectric protection member face each other becomes the dielectric space. The dielectric film to be protected is the dielectric film for the second electrode, The second electrode forming part further includes the dielectric protection member, The active gas generating device further includes a power source for applying a voltage between the first electrode conductive film of the first electrode constituting portion and the second electrode conductive film of the second electrode constituting portion.

9. The active gas generating device according to claim 1, wherein: further comprising a power source for applying a voltage between the first electrode conductive film of the first electrode constituent part and the second electrode conductive film of the second electrode constituent part, The dielectric protection member is provided with a protection member space between the dielectric protection member and the protection target dielectric film. The applied voltage, the discharge space, and the protection member space are set to satisfy a discharge generation requirement that the dielectric barrier discharge is generated in the discharge space and the dielectric barrier discharge is not generated in the protection member space when the applied voltage is applied.

10. The active gas generating device according to claim 9, characterized in that: The protection member space is provided between the dielectric protection member and the lower surface of the first electrode dielectric film, and the space where the dielectric protection member and the second electrode dielectric film face each other becomes the dielectric space. The dielectric film to be protected is the dielectric film for the first electrode, The first electrode configuration unit further includes the dielectric protection member.

11. The active gas generating device according to claim 1, wherein: It also includes an electrode reinforcing conductive film provided closely on the lower surface of the first electrode dielectric film, The dielectric protection member is disposed below the electrode reinforcing conductive film, and the dielectric protection member includes the entire electrode reinforcing conductive film when viewed from above, and a protection member space is provided between the dielectric protection member and the electrode reinforcing conductive film. The space where the dielectric protection member and the second electrode dielectric film face each other is the dielectric space. The dielectric film to be protected is the dielectric film for the first electrode, The first electrode component further includes the dielectric protection member and the electrode reinforcing conductive film. The active gas generating device further includes a power source for applying a voltage between the first electrode conductive film of the first electrode forming part and the second electrode conductive film of the second electrode forming part. generating the dielectric barrier discharge in the discharge space when the applied voltage is applied, The electrode reinforcing conductive film has a planar shape that is larger than the first electrode conductive film in a plan view and smaller than the first electrode dielectric film in a plan view, and the second electrode conductive film includes the electrode reinforcing conductive film in a plan view. The discharge space includes, in the dielectric space, a region where the electrode reinforcing conductive film and the second electrode conductive film overlap in a plan view, that is, an extended main discharge space. The applied voltage, the discharge space, and the protection member space are set to satisfy a discharge generation requirement that the dielectric barrier discharge is generated in the discharge space and the dielectric barrier discharge is not generated in the protection member space when the applied voltage is applied.

12. The active gas generating device according to claim 1, wherein: It also includes an electrode reinforcing conductive film provided closely on the upper surface of the dielectric protection member, wherein the dielectric protection member includes the entirety of the electrode reinforcing conductive film when viewed from above. A protective member space is provided between the electrode reinforcing conductive film and the first electrode dielectric film, The space where the dielectric protection member and the second electrode dielectric film face each other is the dielectric space. The dielectric film to be protected is the dielectric film for the first electrode, The first electrode component further includes the dielectric protection member and the electrode reinforcing conductive film. The active gas generating device further includes a power source for applying a voltage between the first electrode conductive film of the first electrode forming part and the second electrode conductive film of the second electrode forming part. generating the dielectric barrier discharge in the discharge space when the applied voltage is applied, The electrode reinforcing conductive film has a planar shape that is larger than the first electrode conductive film in a plan view and smaller than the first electrode dielectric film in a plan view, and the second electrode conductive film includes the electrode reinforcing conductive film in a plan view. The discharge space includes, in the dielectric space, a region where the electrode reinforcing conductive film and the second electrode conductive film overlap in a plan view, that is, an extended main discharge space. The applied voltage, the discharge space, and the protection member space are set to satisfy a discharge generation requirement that the dielectric barrier discharge is generated in the discharge space and the dielectric barrier discharge is not generated in the protection member space when the applied voltage is applied.

13. The active gas generating device according to claim 10, characterized in that: The lower surface of the first electrode dielectric film has a concave bottom surface and a convex bottom surface provided around the concave bottom surface, the convex bottom surface is formed at a higher position in the height direction than the concave bottom surface, the concave bottom surface overlaps with the dielectric protection member in a plan view, and the convex bottom surface does not overlap with the dielectric protection member in a plan view, The electrode unit also has: a dielectric film supporting member having a dielectric supporting surface supporting the bottom surface of the protrusion of the first electrode dielectric film from below; and a dielectric film pressing member for pressing the first electrode dielectric film from above, The dielectric film pressing member does not overlap with the first electrode conductive film in a plan view. The dielectric film supporting member further includes a protection member supporting surface that supports the dielectric protection member from below, The dielectric support surface is formed at a higher position in the height direction than the protection member support surface, and the height difference between the dielectric support surface and the protection member support surface is set to form the protection member space between the lower surface of the first electrode dielectric film and the upper surface of the dielectric protection member.

14. The active gas generating device according to claim 11 or 12, characterized in that: The lower surface of the first electrode dielectric film has a concave bottom surface and a convex bottom surface provided around the concave bottom surface, the convex bottom surface is formed at a higher position in the height direction than the concave bottom surface, the concave bottom surface overlaps with the dielectric protection member and the electrode reinforcing conductive film in a plan view, and the convex bottom surface does not overlap with the dielectric protection member and the electrode reinforcing conductive film in a plan view, The electrode unit also has: a dielectric film supporting member having a dielectric supporting surface supporting the bottom surface of the protrusion of the first electrode dielectric film from below; and a dielectric film pressing member for pressing the first electrode dielectric film from above, The dielectric film pressing member does not overlap with the first electrode conductive film in a plan view. The dielectric film supporting member further includes a protection member supporting surface that supports the dielectric protection member from below, The dielectric support surface is formed at a higher position in the height direction than the protection member support surface, and the height difference between the dielectric support surface and the protection member support surface is set so that the protection member space is formed in a portion between the lower surface of the first electrode dielectric film and the upper surface of the dielectric protection member.

15. The active gas generating device according to claim 9, characterized in that: The protection member space is provided between the dielectric protection member and the upper surface of the second electrode dielectric film, and the space where the first electrode dielectric film and the dielectric protection member face each other becomes the dielectric space. The dielectric film to be protected is the dielectric film for the second electrode, The second electrode configuration unit further includes the dielectric protection member.

16. The active gas generating device according to any one of claims 3 to 7 and 10 to 14, characterized in that: A conductive housing is further provided, which accommodates the electrode unit in the housing inner space. The housing has a housing bottom including a flat surface and a conductor receiving space recessed from the flat surface in a depth direction. The electrode unit further includes a reference potential conductor disposed below the second electrode forming portion and accommodated in the conductor accommodating space. The reference potential conductor has a buffer space for active gas at an upper portion, and the second electrode configuration portion is arranged to seal the buffer space for active gas. The second electrode dielectric film has a dielectric through-hole penetrating the second electrode dielectric film in a region overlapping with the active gas buffer space in a plan view, and the second electrode conductive film has a conductive film opening in a region overlapping with the active gas buffer space in a plan view, and the conductive film opening overlaps with the dielectric through-hole in a plan view. The active gas generating device further includes a plurality of gas ejection ports respectively provided from the bottom surface of the active gas buffer space to penetrate the reference potential conductor, wherein the plurality of gas ejection ports do not overlap with the dielectric through-hole in a plan view. The discharge space includes, in addition to the main discharge space, an auxiliary discharge space including the dielectric through-hole and a part of the active gas buffer space. The active gas discharged from the plurality of gas ejection ports is divided into a plurality of partial active gases. The housing bottom of the housing has a housing opening in a region overlapping with the active gas buffer space in a plan view, and the plurality of partial active gases are guided downward through the housing opening. The shell opening includes a tapered region whose opening area increases as it goes downward. The plurality of gas ejection ports are disposed so as to approach each other as they go downward so that the plurality of partial active gases collide in a collision region, and the collision region exists in the tapered region or above the tapered region.

Images