Evaporation source assembly and evaporation equipment
By setting out convex and concave restriction parts in the evaporation source assembly, the problem of uneven doping of the host and guest under the sweep method of metal evaporation source is solved, more uniform material doping is achieved, and the performance of OLED display devices is improved.
Patent Information
- Application Number
- CN202510406075.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-04-01
- Publication Date
- 2025-07-04
AI Technical Summary
In the prior art, when the metal evaporation source is evaporated by sweep, the doping of the host and guest is uneven, affecting the performance of the OLED display device.
An evaporation source assembly is designed, including a base, a first evaporation source, a second evaporation source and a plurality of baffles, and an outer convex restriction portion and an inner concave restriction portion are provided on the baffle to expand the evaporation range and improve the uniformity of the doping of material.
Through the design of the convex restriction part and the concave restriction part, the evaporation range is expanded, making the doping of the main material and the guest material more uniform, and the performance of the OLED display device is improved.
Smart Images

Figure CN120249889A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of material evaporation, and in particular to an evaporation source component and an evaporation device. Background Art
[0002] Compared with traditional liquid crystal display devices, organic light-emitting diode (OLED) display devices have the advantages of low energy consumption, low production cost, self-luminescence, wide viewing angle and fast response speed. It is one of the current hot research areas of display devices.
[0003] At present, in order to reduce the cost of OLED screens, larger substrates need to be used to produce OLED screens. The metal evaporation source needs to be evaporated by scanning. For the metal film layer that needs to be doped, there is a problem of uneven host and guest doping, which affects the performance of the display device. Summary of the invention
[0004] The embodiment of the present application provides an evaporation source assembly and an evaporation device. It can solve the problem of uneven host and guest doping in the prior art metal evaporation source using a scanning method for evaporation. The technical solution is as follows:
[0005] In one aspect, an evaporation source assembly is provided, comprising: a base, a first evaporation source, a second evaporation source, and a plurality of baffles;
[0006] One side of the base has a first evaporation chamber and a second evaporation chamber distributed in a first direction;
[0007] The first evaporation source is located in the first evaporation chamber, and the second evaporation source is located in the second evaporation chamber; the first evaporation source is used to evaporate the guest material, and the second evaporation source is used to evaporate the host material;
[0008] The plurality of baffles are fixed on the base in sequence along the first direction; in the first direction, two baffles are distributed on both sides of the opening of the first evaporation chamber, and two baffles are also distributed on both sides of the opening of the second evaporation chamber;
[0009] Among them, the baffle located on at least one side of the opening of the first evaporation chamber in the first direction has an outward convex limiting portion, the outward convex limiting portion is located on the side of the baffle away from the base, and the outward convex limiting portion is located on the side of the baffle close to the first evaporation source in the first direction; the side of the outward convex limiting portion away from the base is a convex surface, and the vertical distance between the side of the convex surface facing the first evaporation source in the first direction and the base is smaller than the vertical distance between the side of the convex surface away from the first evaporation source in the first direction and the base.
[0010] Optionally, the vertical distance between the convex surface and the base gradually decreases in the first direction along the direction from the baffle with the convex limiting portion to the first evaporation source.
[0011] Optionally, in the first direction, the two baffles located on both sides of the opening of the first evaporation chamber are respectively a first baffle and a second baffle, and the first baffle is located on the side of the second baffle away from the second evaporation source;
[0012] Wherein, both the first baffle and the second baffle have the convex limiting portion, the convex limiting portion of the first baffle is a first limiting portion, and the convex limiting portion of the second baffle is a second limiting portion;
[0013] The minimum vertical distance between the first limiting portion and the base is greater than or equal to the minimum vertical distance between the second limiting portion and the base.
[0014] Optionally, the first limiting portion includes: an arc-shaped plate body and a reinforcing plate; one side of the arc-shaped plate body is fixedly connected to the side of the first baffle away from the base, and the reinforcing plate is respectively connected to the arc-shaped plate body and the first baffle;
[0015] And / or, the convex surface of the second limiting portion away from the second baffle is a convex arc surface, and the convex arc surface of the second limiting portion is tangent to the surface of the second baffle facing the first evaporation source in the first direction.
[0016] Optionally, in the first direction, the baffle located on at least one side of the opening of the second evaporation chamber has a concave limiting portion, the concave limiting portion is located on the side of the baffle away from the base, and the concave limiting portion is located on the side of the baffle close to the second evaporation source in the first direction; the surface of the concave limiting portion away from the base is a concave surface, and the vertical distance between the side of the concave surface facing the second evaporation source and the base in the first direction is less than the vertical distance between the side of the convex surface away from the second evaporation source and the base in the first direction.
[0017] Optionally, in the first direction, the two baffles located on both sides of the opening of the second evaporation chamber are respectively a third baffle and a fourth baffle, and the third baffle is located on the side of the fourth baffle away from the first evaporation source;
[0018] Wherein, both the third baffle and the fourth baffle have the concave limiting portion, the concave limiting portion of the third baffle is a third limiting portion, and the concave limiting portion of the fourth baffle is a fourth limiting portion;
[0019] The minimum vertical distance between the third limiting portion and the base is greater than or equal to the minimum vertical distance between the fourth limiting portion and the base.
[0020] Optionally, the third limiting portion includes: a first plate body, a connecting portion, and a second plate body; one side of the first plate body is fixedly connected to the side of the third baffle away from the base, and the other side of the first plate body is connected to one side of the second plate body through the connecting portion;
[0021] Wherein, the first plate body and the second plate body are arranged in parallel, and the second plate body is closer to the base than the first plate body.
[0022] Optionally, one side of the connecting portion is rotatably connected to the first plate body, and the other side of the connecting portion is rotatably connected to the second plate body.
[0023] Optionally, the concave surface of the fourth limiting portion facing away from the fourth baffle is a concave arc surface;
[0024] And / or, in the case where the plurality of baffles includes a second baffle, the second baffle and the fourth baffle are the same baffle.
[0025] On the other hand, an evaporation device is provided, including: a substrate bracket, and an evaporation source assembly connected to the substrate bracket, and the evaporation source assembly is any one of the above evaporation source assemblies.
[0026] The beneficial effects brought by the technical solutions provided by the embodiments of the present application are:
[0027] By setting the limiting portion of the baffle on at least one side of the opening of the first evaporation chamber in the first direction as an outward convex limiting portion. Since the edge and the convex surface of the outward convex limiting portion both limit the evaporation range, the convex surface can expand the evaporation range and can expand the edge area of the first evaporation source. In this way, the guest material can evaporate to the area where it could not evaporate originally, and the evaporation range of the guest material can coincide with the evaporation range of the host material. In addition, since the edge area of the first evaporation source is expanded, the change curve of the same material in the edge area is smoother. In this way, the overall doping uniformity of the host material and the guest material is improved. Description of the Drawings
[0028] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for the description of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.
[0029] Figure 1Schematic diagram of the thickness curve of a metal evaporation coating layer;
[0030] Figure 2 Schematic diagram of the evaporation range of the object evaporation source;
[0031] Figure 3 Schematic diagram of the structure of the evaporation source assembly provided by the embodiment of the present application;
[0032] Figure 4 Schematic diagram of the structure of multiple baffles provided by the embodiment of the present application;
[0033] Figure 5 Schematic diagram of the structure of the evaporation source and the base provided by the embodiment of the present application;
[0034] Figure 6 Schematic diagram of the evaporation range of the first evaporation source provided by the embodiment of the present application;
[0035] Figure 7 Is Figure 1 And Figure 6 Schematic diagram of the comparison of the corresponding evaporation ranges;
[0036] Figure 8 Schematic diagram of the thickness curve of the metal film layer of the evaporation source assembly provided by the embodiment of the present application;
[0037] Figure 9 Schematic diagram of the evaporation range of the evaporation source assembly provided by the embodiment of the present application;
[0038] Figure 10 Schematic diagram of the evaporation range of a main body evaporation source;
[0039] Figure 11 Schematic diagram of the evaporation range of the second evaporation source provided by the embodiment of the present application;
[0040] Figure 12 Is Figure 10 And Figure 11 Schematic diagram of the comparison of the corresponding evaporation ranges;
[0041] Figure 13 Schematic diagram of the structure of the third limiting part provided by the embodiment of the present application;
[0042] Figure 14 Another schematic diagram of the structure of the third limiting part provided by the embodiment of the present application;
[0043] Figure 15 Schematic diagram of the structure of the first evaporation source and the first mounting base provided by the embodiment of the present application. Detailed implementation manners
[0044] To make the objectives, technical solutions, and advantages of this application clearer, the following will further describe the embodiments of this application in detail with reference to the accompanying drawings.
[0045] In the field of display technology, the display panel involves the preparation of multiple metal film layers (or conductive layers), such as pixel driving circuits on the driving backplane, anodes and cathodes in light-emitting devices, and touch electrodes in the touch layer. Some of the above conductive layers need to be formed by co-evaporating two metal materials. For example, the cathode of an organic light-emitting diode can be formed by co-evaporating magnesium and silver, and the anode can be formed by co-evaporating aluminum and silver. Another example is that the touch electrodes in the touch layer are formed by co-evaporating copper and nickel.
[0046] In the process of evaporating the above conductive layers on a large-size substrate, the rotation evaporation method cannot be used. Currently, the main evaporation method for metal co-evaporation is the sweeping method. Taking the co-evaporation of magnesium and silver as an example, as the main material, silver metal has a large evaporation rate, large molecules, and more collisions with the baffle. Under the limitation of the same evaporation range, the evaporation range of silver metal as the main material is larger than that of magnesium metal.
[0047] Please refer to Figure 1 , Figure 1 which is a schematic diagram of the thickness curve of a metal evaporation film layer. Among them, the solid line is the thickness curve of the main material, and the dotted line is the thickness curve of the guest material. It can be seen that there is no mixing of the guest material in the area K outside the evaporation range of the guest material. When the main material is silver, due to the poor film-forming property of silver ions forming a film alone, the quality of the metal film layer in this area K is poor, which easily leads to device instability and reduces device performance.
[0048] Please refer to Figure 2 , Figure 2 which is a schematic diagram of the evaporation range of the guest evaporation source. The evaporation source generally includes: a heating component, a crucible, and a nozzle. The material to be evaporated is placed in the crucible. After the heating component heats the crucible, the heated and evaporated material is ejected through the nozzle. In the current design of evaporation equipment, the guest evaporation source 01 is generally regarded as a point output, and the evaporation range of the guest material on the substrate 03 is restricted by the guest baffle 02. In fact, as shown in Figure 2 , after the material ejected from the nozzle of the guest evaporation source 01 is restricted by the guest baffle 02, it forms a film on the substrate 03. At the edge area D1 of the evaporation range, due to the small evaporation rate of the guest material, there are problems such as a sharp change in thickness and an uneven thickness curve as shown in Figure 1 . In this edge area D1, the change curve of the guest material does not match the change curve of the main material. Therefore, in the edge area D1 and the area K, the ratio of the main material to the guest material does not match the preset ratio, that is, there is a problem of uneven doping.
[0049] The present application embodiment provides an evaporation source assembly, please refer to Figures 3 to 5 , Figure 3 A schematic diagram of the structure of the evaporation source assembly provided in an embodiment of the present application, Figure 4 A schematic diagram of the structure of multiple baffles provided in an embodiment of the present application, Figure 5 This is a schematic structural diagram of an evaporation source and a base provided in an embodiment of the present application. The evaporation source assembly 000 may include: a base 100, a first evaporation source 200, a second evaporation source 300, and a plurality of baffles 400.
[0050] like Figure 3 As shown, one side of the base 100 has a first evaporation chamber 110 and a second evaporation chamber 120 distributed in a first direction X.
[0051] The first evaporation source 200 is located in the first evaporation chamber 110 , and the second evaporation source 300 is located in the second evaporation chamber 120 ; the first evaporation source 200 is used to evaporate the guest material, and the second evaporation source 300 is used to evaporate the host material.
[0052] like Figure 3 and Figure 4 As shown, a plurality of baffles 400 are fixed on the base 100 in sequence along the first direction X; in the first direction X, two baffles 400 are distributed on both sides of the opening of the first evaporation chamber 110 , and two baffles 400 are also distributed on both sides of the opening of the second evaporation chamber 120 .
[0053] Among them, the baffle 400 located on at least one side of the opening of the first evaporation chamber 110 in the first direction X has an outward convex limiting portion 400a, the outward convex limiting portion 400a is located on the side of the baffle 400 away from the base 100, and the outward convex limiting portion 400a is located on the side of the baffle 400 close to the first evaporation source 200 in the first direction X; the side of the outward convex limiting portion 400a away from the base 100 is a convex surface, and the vertical distance between the side of the convex surface facing the first evaporation source 200 in the first direction X and the base 100 is smaller than the vertical distance between the side of the convex surface facing away from the first evaporation source 200 in the first direction X and the base 100.
[0054] like Figure 5 As shown, the number of the first evaporation source 200 and the second evaporation source 300 can be multiple, multiple first evaporation sources 200 are arranged in a row, multiple second evaporation sources 300 are arranged in a row, and a row of first evaporation sources 200 and a row of second evaporation sources 300 are arranged in the first direction X.
[0055] Please refer to Figures 6 to 8 , Figure 6 A schematic diagram of the evaporation range of the first evaporation source provided in an embodiment of the present application, Figure 7 forFigure 1 Comparison schematic diagram of evaporation ranges corresponding to Figure 6 is a schematic diagram of the thickness curve of the metal film layer of the evaporation source assembly provided by the embodiment of the present application. For ease of description, it is schematically illustrated that both baffles 400 located on both sides of the opening of the first evaporation chamber 110 in the first direction X are provided with outwardly convex limiting portions 400a. In Figure 8 In, the evaporation range of the object evaporation source 01 is restricted by the edge of the object baffle 02, while in the embodiment of the present application, both the edge and the outwardly convex surface of the outwardly convex limiting portion 400a restrict the evaporation range of the first evaporation source 200. The outwardly convex surface can expand the evaporation range and can expand the edge region D2. Thus, corresponding Figure 2 to the region K in, the object material can evaporate into this region K, and the evaporation range of the main material can coincide with the evaporation range of the object material. In addition, due to the expansion of the edge region D2, the change curve of the same material in the edge region D2 is smoother than that in the edge region D1. Thus, the overall doping uniformity of the main material and the object material is improved. Figure 2 It should be noted that in
[0056] and Figure 1 In, the solid line is respectively used to represent the thickness change curve of the main material, and the dotted line is used to represent the thickness change curve of the object material. The main purpose is to illustrate the change situation and the evaporation range, rather than restricting the actual thickness curve. Figure 8 In some possible implementation manners, please refer to
[0057] and Figure 3 The vertical distance between the outwardly convex surface of the outwardly convex limiting portion 400a and the base 100 gradually decreases in the direction from the baffle 400 having the outwardly convex limiting portion 400a to the first evaporation source 200 in the first direction X. For example, the outwardly convex surface of the outwardly convex limiting portion 400a can be an outwardly convex arc surface or an outwardly convex polygonal surface (such as the cylindrical surface of a prism). Figure 4 In some possible implementation manners, please refer to
[0058] and Figure 3 In the first direction X, the two baffles 400 located on both sides of the opening of the first evaporation chamber 110 are respectively the first baffle 410 and the second baffle 420, and the first baffle 410 is located on the side of the second baffle 420 away from the second evaporation source 300. Figure 4
[0059] Both the first baffle 410 and the second baffle 420 have outwardly convex limiting portions 400a. The outwardly convex limiting portion 400a of the first baffle 410 is the first limiting portion 410a, and the outwardly convex limiting portion 400a of the second baffle 420 is the second limiting portion 420a.
[0060] Figures 6 to 7 Please refer to Figures 6 to 7, by providing outward convex limiting portions 400a on both the first baffle 410 and the second baffle 420, the evaporation range of the first evaporation source 200 can be expanded at the edge regions D2 on both sides in the first direction X, so that the overall evaporation range of the object is enlarged, and the change in the material thickness in the edge region D2 is smoother, making the doping between the main material and the object material more uniform.
[0061] Exemplarily, please refer to Figure 9 , Figure 9 FIG. is a schematic diagram of the evaporation range of the evaporation source assembly provided by the embodiment of the present application. Generally, the spraying direction of the second evaporation source 300 (main material) is basically facing the substrate 001 to be vapor-deposited. In order to make the evaporation ranges of the first evaporation source 200 and the second evaporation source 300 the same, the limiting angle of the second baffle 420 corresponding to the first evaporation source 200 should be less than or equal to the limiting angle of the first baffle 410. In this way, the evaporation range of the first evaporation source 200 shifts towards the side of the second evaporation source 300. Similarly, the evaporation range of the second evaporation source 300 can also shift towards the side of the first evaporation source 200. At this time, the limiting angle of the third baffle 430 corresponding to the second evaporation source 300 should be greater than or equal to the limiting angle of the fourth baffle 440. Therefore, in the embodiment of the present application, the minimum vertical distance between the first limiting portion 410a and the base 100 is greater than or equal to the minimum vertical distance between the second limiting portion 420a and the base 100.
[0062] In some possible implementation manners, please refer to Figure 4 , the first limiting portion 410a may include: an arc-shaped plate body 411 and a reinforcing plate 412; one side of the arc-shaped plate body 411 is fixedly connected to the side of the first baffle 410 facing away from the base 100, and the reinforcing plate 412 is connected to both the arc-shaped plate body 411 and the first baffle 410. The side of the arc-shaped plate body 411 facing away from the first evaporation source 200 has a convex surface, and the reinforcing plate 412 can ensure the position and angle of the arc-shaped plate body 411 relative to the first evaporation source 200, ensuring that the convex surface and the edge of the arc-shaped plate body 411 effectively adjust the evaporation range of the first evaporation source 200.
[0063] In some possible implementation manners, please refer to Figure 4 , the convex surface of the second limiting portion 420a facing away from the second baffle 420 is a convex arc surface, and the convex arc surface of the second limiting portion 420a is tangent to the surface of the second baffle 420 facing the first evaporation source 200 in the first direction X.
[0064] In the embodiment of the present application, the outer convex arc surface of the first limiting portion 410a is more convex than the surface of the first baffle 410 facing the first evaporation source 200 in the first direction X, and the outer convex arc surface of the second limiting portion 420a is tangent to the surface of the second baffle 420 facing the first evaporation source 200 in the first direction X, so that the angle at which the first limiting portion 410a limits the evaporation range of the first evaporation source 200 is greater than the angle at which the second limiting portion 420a limits the evaporation range of the first evaporation source 200. Therefore, the evaporation range of the first evaporation source 200 can be offset to one side of the second evaporation source 300.
[0065] For some possible implementations, see Figure 3 The baffle 400 located on at least one side of the opening of the second evaporation chamber 120 in the first direction X has a concave limiting portion 400b, the concave limiting portion 400b is located on the side of the baffle 400 away from the base 100, and the concave limiting portion 400b is located on the side of the baffle 400 close to the second evaporation source 300 in the first direction X; the side of the concave limiting portion 400b away from the base 100 is a concave surface, and the vertical distance between the side of the concave surface facing the second evaporation source 300 in the first direction X and the base 100 is smaller than the vertical distance between the side of the convex surface facing away from the second evaporation source 300 in the first direction X and the base 100.
[0066] Please refer to Figure 10 , Figure 10 Schematic diagram of the evaporation range of a main evaporation source. The commonly used main baffle 05 is a flat baffle. The evaporation area of the main evaporation source 04 is large enough. The problem with the main evaporation source 04 is that the evaporation rate of the main evaporation source 04 is high, and it is easy to grow on the edge of the main baffle 05 facing the main evaporation source 04. When the edge position ( Figure 10 When more material is deposited on the surface of the main evaporation source 04 (as indicated by the middle arrow), the original restriction of the main baffle 05 on the evaporation range of the main evaporation source 04 changes, resulting in a change in the state of material evaporation. Figure 3 and Figure 4 As shown, at least one of the third baffle 430 and the fourth baffle 440 corresponding to the second evaporation source 300 is configured to be concave or stepped to reduce the accumulation of materials at a single position.
[0067] Please refer to Figure 11 and Figure 12 , Figure 11 A schematic diagram of the evaporation range of the second evaporation source provided in an embodiment of the present application, Figure 12 for Figure 10 and Figure 11 The schematic diagram of the corresponding evaporation range is compared with Figure 10The main material in it can only be deposited at the bottom of the main baffle 05. In the embodiments of the present application, the main material can be deposited on the concave surface of the concave limiting part 400b and on the side of the concave limiting part 400b facing the second evaporation source 300 respectively ( Figure 11 at the position indicated by the arrow in it), so as to reduce the change in the evaporation state of the main material during the long-term evaporation process. And it can be adjusted by the height of the concave limiting part 400b relative to the base 100, change the evaporation area size, and reduce the influence of the baffle on the utilization rate and doping uniformity of the main material. To a certain extent, it can also change the material distribution in the edge area D4. The material distribution in the edge area D4 is more uneven than that in the Figure 11 edge area D3 in it. When the evaporation ranges of the first evaporation source 200 and the second evaporation source 300 are the same, the edge area D4 overlaps with the edge area D2. In this way, the change of the main material in the edge area D4 is closer to the change of the guest material in the edge area D2, so that the doping uniformity in the edge area can be further improved.
[0068] In some possible implementation manners, please refer to Figure 3 and Figure 4 . In the first direction X, the two baffles 400 located on both sides of the opening of the second evaporation chamber 120 are the third baffle 430 and the fourth baffle 440 respectively. The third baffle 430 is located on the side of the fourth baffle 440 away from the first evaporation source 200.
[0069] Among them, both the third baffle 430 and the fourth baffle 440 have a concave limiting part 400b. The concave limiting part 400b of the third baffle 430 is the third limiting part 430a, and the concave limiting part 400b of the fourth baffle 440 is the fourth limiting part 440a.
[0070] The evaporation range of the second evaporation source 300 can shift towards the side of the first evaporation source 200. At this time, the angle restricted by the third baffle 430 corresponding to the second evaporation source 300 is greater than or equal to the angle restricted by the fourth baffle 440. Therefore, the minimum vertical distance between the third limiting part 430a and the base 100 is greater than or equal to the minimum vertical distance between the fourth limiting part 440a and the base 100.
[0071] In some possible implementation manners, please refer to Figure 4 and Figure 13 . Figure 13 is a schematic structural diagram of the third limiting part provided by the embodiments of the present application. The third limiting part 430a may include: a first plate body 431, a connecting part 433 and a second plate body 432; one side of the first plate body 431 is fixedly connected to the side of the third baffle 430 away from the base 100, and the other side of the first plate body 431 is connected to one side of the second plate body 432 through the connecting part 433.
[0072] Among them, the first plate body 431 and the second plate body 432 are arranged in parallel, and the second plate body 432 is closer to the base 100 than the first plate body 431.
[0073] For example, a reinforcing plate can also be provided between the first plate body 431 and the connecting portion 433, so as to increase the strength of the third limiting portion 430a.
[0074] Exemplarily, please refer to Figure 13 and Figure 14 , Figure 14 which is another structural schematic diagram of the third limiting portion provided by the embodiment of the present application. One side of the connecting portion 433 is rotatably connected to the first plate body 431, and the other side of the connecting portion 433 is rotatably connected to the second plate body 432.
[0075] Exemplarily, as Figure 13 shown, the connecting portion 433 may include: a first sub-connecting portion 433a and two second sub-connecting portions 433b located on both sides of the first sub-connecting portion 433a. The two ends of the two second sub-connecting portions 433b are respectively rotatably connected to the first plate body 431 and the second plate body 432. In this way, the two second sub-connecting portions 433b, the first plate body 431 and the second plate body 432 can enclose a parallelogram structure. Due to the above parallelogram structure, when the first plate body 431 moves relative to the second plate body 432, the first plate body 431 and the second plate body 432 remain arranged in parallel. The first sub-connecting portion 433a is respectively rotatably connected to the first plate body 431 and the second plate body 432, and the three form a Z-shaped structure, and the third limiting portion 430a can maintain a stepped shape. As Figure 14 shown, if necessary, the stepped third limiting portion 430a can be adjusted to a baffle shape close to the horizontal.
[0076] The second sub-connecting portion 433b is used to play an auxiliary orientation role; grooves can be provided on the upper and lower first plate body 431 and the second plate body 432 to play a limiting effect and ensure that both the first plate body 431 and the second plate body 432 are horizontal; when the main material evaporates, the first plate body 431 plays a main evaporation angle limiting effect. Whether the second plate body 432 plays an evaporation angle limiting effect can be flexibly adjusted by adjusting the distance between the second plate body 432 and the fourth baffle 440 in the first direction X. When the second plate body 432 plays a limiting role, most of the main material will be deposited below the second plate body 432. In this way, less is deposited on the edge of the first plate body 431, ensuring that the first plate body 431 still plays a main evaporation angle limiting effect.
[0077] As Figure 9As shown, by rotating the second plate body 432 to change the distance between the second plate body 432 and the fourth baffle 440, the evaporation range of the second evaporation source 300 on one side of the third baffle 430 can be adjusted, so as to meet the requirements of more evaporation coating processes.
[0078] In some possible implementation manners, such as Figure 3 and Figure 4 as shown, the concave surface of the fourth limiting portion 440a facing away from the fourth baffle 440 is a concave arc surface; and / or, in the case where the plurality of baffles 400 may include the second baffle 420, the second baffle 420 and the fourth baffle 440 are the same baffle 400.
[0079] Exemplarily, when the first evaporation chamber 110 and the second evaporation chamber 120 are arranged adjacent to each other, the second baffle 420 and the fourth baffle 440 may be the same baffle, and this baffle has both the second limiting portion 420a and the fourth limiting portion 440a, that is, it has both the convex limiting portion 400a and the concave limiting portion 400b at the same time, so as to reduce the size of the evaporation source assembly 000 in the first direction X.
[0080] In some possible implementation manners, please refer to Figure 3 and Figure 15 , Figure 15 which is a schematic structural diagram of the first evaporation source and the first mounting seat provided by an embodiment of the present application. The evaporation source assembly 000 may further include: a first mounting seat 500 and a second mounting seat 600.
[0081] The first mounting seat 500 is located in the first evaporation chamber 110 and is rotatably connected to the first evaporation source 200; the second mounting seat 600 is fixed in the second evaporation chamber 120 and is fixedly connected to the second evaporation source 300.
[0082] Wherein, the evaporation nozzle orientations of the first evaporation source 200 and the second evaporation source 300 intersect.
[0083] In the embodiment of the present application, taking the first evaporation source 200 as an example, the evaporation source may include: a mounting bracket 230, a heating assembly 220, a crucible and an evaporation nozzle 210. The heating assembly 220 is used to heat the crucible. The heating assembly 220 is mounted on the mounting bracket 230, and the mounting bracket 230 is rotatably connected to the first mounting seat 500. For the second evaporation source 300, the mounting bracket of the second evaporation source 300 is fixedly connected to the second mounting seat 600.
[0084] Exemplarily, the first mounting base 500 is slidably connected to the base 100. The first mounting base 500 has a sliding groove 510 extending along the first direction X, so that the first mounting base 500 slides relative to the base 100 in the first direction X. In cooperation with the rotation between the first evaporation source 200 and the first mounting base 500, the orientation of the evaporation nozzle of the first evaporation source 200 and the evaporation range of the first evaporation source 200 can be adjusted, so as to ensure that the evaporation ranges of the first evaporation source 200 and the second evaporation source 300 can overlap. Alternatively, according to the needs of the process, the evaporation range of the first evaporation source 200 can be adjusted to the required position, which increases the flexibility of the process.
[0085] It should be noted that in the embodiments of the present application, there is no limitation on whether the first evaporation source 200 and the second evaporation source 300 are point evaporation sources or line evaporation sources, which can be adjusted according to the process requirements. In addition, according to the process requirements, at least one of the first evaporation source 200 and the second evaporation source 300 can be controlled to work, for example, the guest material is first vapor-deposited.
[0086] In summary, the evaporation source assembly provided by the embodiments of the present application may include: a base, a first evaporation source, a second evaporation source, and a plurality of baffles. The limiting part of the baffle on at least one side of the opening of the first evaporation chamber in the first direction X is set as an outward convex limiting part. Since the edge and the convex surface of the outward convex limiting part both limit the evaporation range, the convex surface can expand the evaporation range and can enlarge the edge area of the first evaporation source. In this way, the guest material can evaporate to the area where it could not evaporate originally, and the evaporation range of the guest material can coincide with the evaporation range of the host material. In addition, since the edge area of the first evaporation source is enlarged, the change curve of the same material in the edge area is smoother, so that the overall doping uniformity of the host material and the guest material is improved.
[0087] The embodiments of the present application provide an evaporation device, which may include: a substrate holder, and an evaporation source assembly connected to the substrate holder. The substrate holder is used to mount the substrate 001 to be vapor-deposited, and the evaporation source assembly may be the evaporation source assembly 000 described in any of the above embodiments. The above evaporation device may have the technical effects corresponding to the evaporation source assembly 000, which will not be repeated here.
[0088] In the present application, the terms "first" and "second" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance. The term "plurality" means two or more, unless otherwise clearly defined.
[0089] The above are only optional embodiments of the present application and are not intended to limit the present application. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims
1. An evaporation source assembly, characterized in that, include: A base, a first evaporation source, a second evaporation source, and a plurality of baffles; One side of the base has a first evaporation chamber and a second evaporation chamber distributed in a first direction; The first evaporation source is located in the first evaporation chamber, and the second evaporation source is located in the second evaporation chamber; the first evaporation source is used to evaporate the guest material, and the second evaporation source is used to evaporate the host material; The plurality of baffles are fixed on the base in sequence along the first direction; in the first direction, two baffles are distributed on both sides of the opening of the first evaporation chamber, and two baffles are also distributed on both sides of the opening of the second evaporation chamber; Among them, the baffle located on at least one side of the opening of the first evaporation chamber in the first direction has an outward convex limiting portion, the outward convex limiting portion is located on the side of the baffle away from the base, and the outward convex limiting portion is located on the side of the baffle close to the first evaporation source in the first direction; the side of the outward convex limiting portion away from the base is a convex surface, and the vertical distance between the side of the convex surface facing the first evaporation source in the first direction and the base is smaller than the vertical distance between the side of the convex surface away from the first evaporation source in the first direction and the base.
2. The evaporation source assembly according to claim 1, wherein A vertical distance between the outer convex surface and the base gradually decreases in the first direction from the baffle having the outer convex limiting portion to the first evaporation source.
3. The evaporation source assembly according to claim 1, wherein In the first direction, the two baffles located on both sides of the opening of the first evaporation chamber are respectively a first baffle and a second baffle, and the first baffle is located on a side of the second baffle away from the second evaporation source; Wherein, both the first baffle plate and the second baffle plate have the convex limiting portion, the convex limiting portion of the first baffle plate is the first limiting portion, and the convex limiting portion of the second baffle plate is the second limiting portion; A minimum vertical distance between the first limiting portion and the base is greater than or equal to a minimum vertical distance between the second limiting portion and the base.
4. The evaporation source assembly according to claim 3, wherein The first limiting portion includes: an arc-shaped plate body and a reinforcing plate; one side of the arc-shaped plate body is fixedly connected to a side of the first baffle plate away from the base, and the reinforcing plate is respectively connected to the arc-shaped plate body and the first baffle plate; And / or, an outer convex surface of the second limiting portion facing away from the second baffle is an outer convex arc surface, and the outer convex arc surface of the second limiting portion is tangent to a surface of the second baffle facing the first evaporation source in the first direction.
5. The evaporation source assembly according to any one of claims 1-4, characterized in that, The baffle plate located on at least one side of the opening of the second evaporation chamber in the first direction has a concave limiting portion, the concave limiting portion is located on the side of the baffle plate away from the base, and the concave limiting portion is located on the side of the baffle plate close to the second evaporation source in the first direction; the side of the concave limiting portion away from the base is a concave surface, and the vertical distance between the side of the concave surface facing the second evaporation source in the first direction and the base is smaller than the vertical distance between the side of the convex surface facing away from the second evaporation source in the first direction and the base.
6. The evaporation source assembly according to claim 5, characterized in that, In the first direction, two baffles located on both sides of the opening of the second evaporation chamber are a third baffle and a fourth baffle respectively, and the third baffle is located on a side of the fourth baffle away from the first evaporation source; Wherein, both the third baffle and the fourth baffle have the concave limiting portion, the concave limiting portion of the third baffle is a third limiting portion, and the concave limiting portion of the fourth baffle is a fourth limiting portion; The minimum vertical distance between the third limiting portion and the base is greater than or equal to the minimum vertical distance between the fourth limiting portion and the base.
7. The evaporation source assembly according to claim 6, characterized in that, The third limiting portion includes: a first plate body, a connecting portion, and a second plate body; one side of the first plate body is fixedly connected to a side of the third baffle away from the base, and the other side of the first plate body is connected to one side of the second plate body through the connecting portion; Wherein, the first plate body and the second plate body are arranged in parallel, and the second plate body is closer to the base than the first plate body.
8. The evaporation source assembly according to claim 7, wherein, One side of the connecting portion is rotatably connected to the first plate body, and the other side of the connecting portion is rotatably connected to the second plate body.
9. The evaporation source assembly according to any one of claims 6-8, characterized in that, The concave surface of the fourth limiting portion facing away from the fourth baffle is a concave arc surface; And / or, when the plurality of baffles includes a second baffle, the second baffle and the fourth baffle are the same baffle.
10. An evaporation device, characterized in that, Comprising: A substrate holder, and an evaporation source assembly connected to the substrate holder, and the evaporation source assembly is the evaporation source assembly according to any one of claims 1-9.