Monocrystalline silicon growth furnace and control method thereof

Abstract

The invention discloses a monocrystalline silicon growth furnace and a control method thereof, the monocrystalline silicon growth furnace comprises a main furnace chamber and an auxiliary furnace chamber, the main furnace chamber is communicated with the auxiliary furnace chamber, the main furnace chamber comprises a furnace cover, a furnace cylinder and a furnace bottom, the furnace cover is detachably connected with one side of the furnace cylinder, and the furnace bottom is connected with the furnace cylinder. And the furnace bottom is detachably connected with the other side of the furnace barrel. According to the monocrystalline silicon growth furnace disclosed by the invention, the furnace bottom is designed into a liftable structure and is matched with the operation platform, so that on one hand, the occupied land load is greatly reduced, on the other hand, the production operation is convenient, the production efficiency is greatly improved, the safety is high, and the equipment investment cost is reduced.

Description

Technical Field

[0001] The present invention belongs to the technical field of single-crystal silicon preparation, and more specifically, relates to a single-crystal silicon growth furnace and a control method thereof. Background Art

[0002] The Czochralski single-crystal furnace is the main equipment for producing photovoltaic power generation, integrated circuits, and silicon products. With the improvement of the conversion efficiency of photovoltaic cells and the increasing size of silicon wafers, as well as the increasing quality requirements for silicon materials in integrated circuit chips, storage chips, functional vehicle-mounted chips, etc., higher requirements are put forward for the automation degree and stable production operation of the single-crystal furnace growth equipment.

[0003] The current mainstream single-crystal growth equipment is the Czochralski single-crystal furnace, such as Figure 4 As shown, it is a conventional Czochralski single-crystal furnace. Its structure mainly includes a main furnace chamber, a heating system, a control system, a vacuum system, and other parts. Among them, the thermal field in the main furnace chamber is the main structure for supporting and accommodating the crystal, and its material and thickness directly determine the overall weight of the single-crystal furnace. In order to ensure the high-temperature resistance and corrosion resistance of the furnace body, the main furnace chamber material is generally made of stainless steel; the thermal field materials include materials such as carbon-carbon composites, high-purity quartz, and graphite, which themselves have relatively high density and weight. Coupled with the weight of the auxiliary furnace chamber, the weight of the entire single-crystal furnace ranges from several tons to dozens of tons. Therefore, the load-bearing requirements for the foundation are extremely strict. If there is a slight mistake, a production safety accident will occur.

[0004] For example, Chinese Patent Publication No. CN115772702A discloses a single-crystal furnace and process for preparing germanium single crystals. A single-crystal furnace and process for preparing germanium single crystals are provided, which enable the auxiliary furnace body to rotate automatically, facilitating the removal of germanium single crystals. A single-crystal furnace and process for preparing germanium single crystals include: a base and a support seat, with a support seat connected to the upper side of the front part of the base; a main furnace body, with the support seat connected to the upper part of the main furnace body; an auxiliary furnace body, with the auxiliary furnace body slidably connected to the upper part of the main furnace body; a connecting seat, with the connecting seat connected to the front part of the main furnace body; a cylinder, with the cylinder connected to the front part of the connecting seat; a feed valve, with the feed valve connected to the telescopic rod of the cylinder, and the feed valve being slidably connected to the connecting seat and the main furnace body. This single-crystal furnace adopts the method of feeding from above and opening the cover, and the bottom structure is fixed. Therefore, the removal of the single-crystal silicon body and the opening of the cover for feeding cannot be completed simultaneously, resulting in low production efficiency and low safety.

[0005] For another example, Chinese published patent CN112680785B discloses a new type of single crystal furnace, which includes a main furnace chamber and a sub-furnace chamber. The sub-furnace chamber is connected to the main furnace chamber. Specifically, this new type of single crystal furnace further includes a material chamber, on which a feeding port is provided. The material chamber is connected to the main furnace chamber through the feeding port. A feeding mechanism is arranged in the material chamber, and the feeding mechanism is telescopically arranged in the feeding port for passing through the feeding port and feeding materials into the crucible in the main furnace chamber. The new type of single crystal furnace provided by this application realizes the feeding operation during the process of screwing out the single crystal rod by setting the material chamber, effectively shortening the total time consumed by screwing out the single crystal rod and the feeding operation, and improving the production efficiency. Although this single crystal furnace avoids later feeding by setting a real-time feeding device, the main furnace chamber still adopts a structure with an integral base fixed to the foundation for load-bearing, and the safety is not high. Summary of the Invention

[0006] Object of the Invention: The object of the present invention is to solve the deficiencies in the prior art and provide a single crystal silicon growth furnace and its control method.

[0007] Technical Solution: A single crystal silicon growth furnace described in the present invention includes a main furnace chamber and a sub-furnace chamber. The main furnace chamber is connected to the sub-furnace chamber. The main furnace chamber includes a furnace cover, a furnace barrel, and a furnace bottom. The furnace cover is detachably connected to one side of the furnace barrel, and the furnace bottom is detachably connected to the other side of the furnace barrel.

[0008] In some embodiments, it further includes an operation platform, and the operation platform is located between the furnace cover and the furnace bottom.

[0009] In some embodiments, it further includes a furnace bottom driving mechanism, and the furnace bottom is driven to lift through the furnace bottom driving mechanism.

[0010] In some embodiments, a crucible is arranged in the main furnace chamber, and the crucible can rotate and lift.

[0011] In some embodiments, a thermal field is installed in the main furnace chamber, and a liquid leakage prevention chassis is installed at the bottom of the furnace bottom.

[0012] In some embodiments, it further includes a semiconductor magnetic field, and the semiconductor magnetic field is located outside or inside the main furnace chamber.

[0013] In some embodiments, it further includes a feeding device, and the feeding device is connected to the crucible in the main furnace chamber for feeding materials into the crucible.

[0014] In some embodiments, a heat insulation layer is provided between the crucible and the barrel wall of the main furnace chamber.

[0015] In some embodiments, the furnace barrel adopts a split structure, including a plurality of interconnected split structures; when the total height of the single crystal furnace remains unchanged, the maximum loading capacity of the thermal field is controlled by adjusting the height of the furnace barrel, and the height of the existing furnace barrel is changed by increasing / decreasing the furnace barrel of the split structure, thereby being compatible with the installation of thermal fields of different sizes and heights. Among them, the height of the furnace barrel can be increased / decreased upward or downward for compatibility, with low transformation cost and faster progress. It is preferably to increase / decrease the height of the furnace barrel downward.

[0016] On the other hand, the present invention also discloses a control method for a single crystal silicon growth furnace, including: Control of the furnace bottom lifting: The furnace bottom is driven to lift by a furnace bottom driving mechanism. At the same time, the furnace bottom lifting is located below the operation platform. At this time, if the crucible has not been lowered, the crucible can be quickly cooled; after the crucible cooling is completed, it is lowered, and the operator can clean, replace or add materials to the thermal field inside the furnace bottom. After the operation is completed, the thermal field and the furnace bottom rise to continue the operation; Control of the furnace cover and the auxiliary furnace chamber: First, open the isolation valve between the auxiliary furnace chamber and the furnace cover, hoist the auxiliary furnace chamber to the side, take out the grown single crystal silicon rod inside, and replace it with a new seed crystal; when stopping the furnace, open the isolation valve between the furnace cover and the furnace barrel, maintain the furnace cover and the internal flow guiding components, and finally close the isolation valve between the furnace cover and the furnace barrel and the isolation valve between the auxiliary furnace chamber and the furnace cover in sequence to continue the operation; The control of the furnace bottom lifting and the control of the furnace cover and the auxiliary furnace chamber can be carried out synchronously.

[0017] Beneficial effects: The beneficial effects of the present invention are as follows: (1) For the single crystal silicon furnace of the present invention, the furnace bottom can be lifted. Compared with the original fixed structure, the liftable furnace bottom structure is adopted, so that after the production is completed, natural cooling can be quickly carried out by lowering the furnace bottom. After cooling, materials can be added or the crucible and thermal field inside can be cleaned. The above operations of natural cooling, adding materials or cleaning can be carried out synchronously with the operation of taking out the single crystal silicon body above and cleaning the auxiliary furnace chamber, thereby greatly shortening the production time and improving the production efficiency; (2) For the single crystal silicon furnace of the present invention, the original structure form that solely relies on the frame for load-bearing support is divided into two parts. The semiconductor magnetic field is supported by the operation platform, and the main furnace chamber is supported by the frame, increasing the contact area, thereby greatly reducing the bearing capacity of the foundation per unit area. And through optimization, the weight of the furnace body and the internal thermal field is reduced, reducing the construction cost and time invested in the foundation by the original structure. By adopting the single crystal silicon growth furnace of the present invention, the production cost invested by the enterprise can be greatly reduced and the construction period can be greatly shortened; (3) The single-crystal silicon furnace of the present invention fixes the semiconductor magnetic field on the operation platform, places the main furnace chamber on the frame, shares the load on the foundation per unit area, reduces the weight of the furnace body and the internal heat field of the furnace, and can improve the overall stability of the main furnace chamber. Therefore, it can solve the problems such as the defective rate caused by the shaking and tilting of the main furnace chamber during the crystal growth process in the crucible; at the same time, since the auxiliary furnace chamber and the furnace cover are both fixed on the furnace barrel, the overall stability of the furnace barrel directly determines the overall quality and safety of the single-crystal silicon body in the auxiliary furnace chamber, thereby improving the yield and safety of the single-crystal silicon body; (4) The single-crystal silicon furnace of the present invention has a split structure for the furnace barrel. Without changing the total height of the single-crystal furnace, the maximum loading capacity of the heat field can be controlled by adjusting the height of the furnace barrel; by increasing / decreasing the height of the split furnace barrel structure, the existing furnace barrel height can be changed, or furnace barrels with different diameter sizes of the split structure can be selected, so as to be compatible with the installation of heat fields of different sizes and heights, realizing flexible production, reducing costs and improving efficiency; (5) The single-crystal silicon furnace of the present invention is equipped with an anti-leakage liquid chassis inside the furnace bottom. The anti-leakage liquid chassis is located below the crucible and is used to catch the spilled or overflowed silicon material liquid, improving the safety performance; (6) The single-crystal silicon furnace of the present invention also includes a semiconductor magnetic field to meet the requirements of producing integrated circuits and semiconductor silicon products. The semiconductor magnetic field can be located either outside or inside the main furnace chamber. When installed outside, the construction and installation are simple, and the semiconductor magnetic field is fixed on the operation platform, improving the overall stability; the semiconductor magnetic field can also be installed inside the main furnace chamber. Installing it inside not only reduces the floor area of the equipment, but also the equipment transformation cost is lower; at the same time, when the magnetic field is installed inside the furnace barrel, there is no problem of the furnace barrel weakening the magnetic field. Therefore, only a smaller current is required to achieve the same magnetic field intensity; at the same time, due to the reduction of the magnetic field radius, the magnetic field energy consumption can be further reduced; therefore, the energy consumption of the built-in magnetic field is greatly reduced compared with the external magnetic field; (7) The single-crystal silicon furnace of the present invention also includes a feeding device, which is connected to the crucible inside the main furnace chamber and is used to feed the crucible. The setting and installation of the feeding device can change the existing process of taking a rod and then feeding in the production process. Through the feeding device, the crucible can be fed in real time, so that the volume size of the crucible can be reduced, thereby reducing the overall weight of the equipment and avoiding the safety production accidents caused by the dumping of the original large-volume crucible; At the same time, since the feeding device feeds the crucible in real time, the linear position of the crystal growing rod in the crucible can be kept at a certain height, stabilizing the production process; (8) The auxiliary furnace chamber of the single-crystal silicon furnace of the present invention can adopt a multi-stage split structure, and the diameter of the split auxiliary furnace chamber cavity is adjustable, so as to be compatible with the growth of various large-diameter crystals. Description of the Drawings

[0018] Figure 1 Cross-sectional view of the main furnace chamber structure according to an embodiment of the present invention; Figure 2 Schematic diagram of the state after the furnace bottom rises according to an embodiment of the present invention; Figure 3 Schematic diagram of the state after the furnace bottom descends according to an embodiment of the present invention; Figure 4 Schematic diagram of the structure of an existing single crystal furnace. Detailed implementation manners

[0019] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are some, but not all, of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0020] In the description of the present invention, it should be noted that the orientation or positional relationship indicated by the terms "center", "upper", "lower", "left", "right", "inner", "outer", etc. is the orientation or positional relationship shown, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation to the present invention.

[0021] In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific situations.

[0022] The present invention will be further described in detail below through specific implementation examples and in conjunction with the accompanying drawings. Embodiment

[0023] As Figure 1 and Figure 3 shown, a single crystal growth furnace includes a main furnace chamber and a secondary furnace chamber 2. The main furnace chamber is in communication with the secondary furnace chamber 2. The main furnace chamber includes a furnace cover 7, a furnace barrel 5, and a furnace bottom 4. The furnace cover 7 is detachably connected to one side of the furnace barrel 5, and the furnace bottom 4 is detachably connected to the other side of the furnace barrel 5.

[0024] In this embodiment, a single crystal rod lifting device 1 is provided at the top of the secondary furnace chamber 2 for continuously lifting the single crystal rod during crystal growth. It also includes a main and secondary chamber lifting and supporting structure 8, which is used to lift the secondary furnace chamber 2 or the furnace lid to the side for processing.

[0025] For the single crystal silicon growth furnace of the present invention, the furnace bottom 4 and the end of the furnace barrel 5 adopt a detachable connection structure. Compared with the prior art where the furnace bottom and the furnace barrel are integrally fixedly connected, the detachable connection structure adopted by the present invention is more flexible in operation, and the furnace lid and the furnace bottom can be operated simultaneously, thus greatly improving production efficiency.

[0026] In this embodiment, in order to reduce the overall bearing strength of the foundation, the present invention abandons the original structure form of fixing the main furnace chamber and the secondary furnace chamber with a base, and adopts a platform structure. Specifically, as Figure 1 or Figure 3 shown, the single crystal silicon growth furnace of the present invention further includes an operation platform 11, and the operation platform 11 is located between the furnace lid 7 and the furnace bottom 4. As Figure 3 shown, the operation platform 11 is supported on the foundation by a support frame, and at the same time, the weight of the semiconductor magnetic field 6 is supported on the operation platform 11 to improve the overall stability. And the present invention directly supports the main furnace chamber and other components such as the thermal field inside it, such as lifting components, through the bottom frame.

[0027] It can be seen that for the single crystal silicon growth furnace of the present invention, the original structure form that solely relies on the frame for load-bearing support is divided into two parts. The semiconductor magnetic field is supported by the operation platform, and the main furnace chamber is supported by the frame, increasing the contact area, thus greatly reducing the bearing force of the foundation per unit area. And through optimization, the weight of the furnace body and the thermal field inside the furnace is reduced, reducing the construction cost and time invested in the foundation by the original structure. By using the single crystal silicon growth furnace of the present invention, the production cost invested by the enterprise can be greatly reduced and the construction period can be greatly shortened.

[0028] In this embodiment, the furnace barrel 5 can adopt an integral structure or a split structure. When adopting a split structure, it can include multiple interconnected split structures, and the multiple split structures are hermetically connected.

[0029] The advantage of the furnace barrel 5 adopting a split structure is that the maximum loading capacity of the thermal field can be controlled by adjusting the height of the furnace barrel under the condition that the total height of the single crystal furnace remains unchanged. For example, since the silicon body produced in the secondary furnace chamber has a large diameter and a low height, at this time, the height of the furnace barrel can be increased by adding split structures, thereby realizing the control of the maximum loading capacity of the thermal field. Conversely, the height of the furnace barrel can be reduced by reducing the split structures, thereby realizing the control of the appropriate loading capacity of the thermal field.

[0030] Another advantage of the split structure of the furnace barrel 5 is that by increasing / decreasing the split furnace barrel, the height of the existing furnace barrel can be changed, or a split furnace barrel with different diameter sizes can be selected, so as to be compatible with the installation of thermal fields of different sizes and heights, realizing flexible production, reducing costs and improving efficiency.

[0031] As described above, without changing the total height of the single crystal furnace, the maximum charging amount of the thermal field can be controlled by adjusting the height of the furnace barrel, or the height of the existing furnace barrel can be changed by increasing / decreasing the split furnace barrel, or a split furnace barrel with different diameter sizes can be selected. Among them, it is possible to increase / decrease the height of the furnace barrel or change the diameter of the furnace barrel in an upward or downward compatible manner, with low transformation costs and faster progress. It is preferably to increase / decrease the height of the furnace barrel or change the diameter of the furnace barrel downward because the furnace bottom in the present invention can be lifted, and the efficiency of increasing / decreasing or replacing is higher.

[0032] In this embodiment, as Figure 1 and Figure 3 shown, in order to drive the normal lifting and lowering of the furnace bottom, the single crystal growth furnace of the present invention further includes a furnace bottom drive mechanism, through which the furnace bottom can be driven to lift and lower, as Figure 2 and Figure 3 shown. Specifically, the furnace bottom drive mechanism can adopt a lead screw motor drive structure or a hydraulic lifting structure. The specific structure of the furnace bottom drive mechanism is specifically selected according to the bottom space, site requirements, etc., and is not limited to the above two lifting structures. Other lifting structures can also be adopted, as long as the furnace bottom can be lifted and lowered finally.

[0033] At the same time, in order to avoid conflicts with the original lifting structure for driving the crucible, the furnace bottom drive mechanism of the present application can be arranged at the bottom, outer side or even inside of the furnace bottom, and can be specifically selected according to the bottom space, site requirements, etc.

[0034] At the same time, in the present invention, the furnace bottom and the furnace barrel in the main furnace chamber adopt a detachable connection structure form, that is, fixed, disassembled connection, sealing and isolation, etc. need to be carried out between the two. The relevant fixed and disassembled connection structures and sealing and isolation structures can be the same as or different from the fixed and disassembled connection structures and sealing and isolation structures between the upper furnace barrel and the furnace cover, as long as the functions are satisfied.

[0035] In this embodiment, the furnace bottom of the present invention can be lifted. Compared with the original fixed structure, the liftable furnace bottom structure is adopted, so that after the production is completed, natural cooling can be quickly carried out by lowering the furnace bottom. After cooling, feeding or cleaning the crucible and heat field inside it can be carried out. The above operations of natural cooling, feeding or cleaning can be carried out synchronously with the operation of taking out the single crystal silicon body from above and cleaning the auxiliary furnace chamber, thus greatly shortening the production time and improving the production efficiency. For the original base-type single crystal furnace structure, since the bottom furnace bottom is fixed, it is necessary to first lift the auxiliary furnace chamber at the top to take out the single crystal silicon body, and then open the furnace cover for cooling, feeding or cleaning operations, which is time-consuming and laborious.

[0036] In this embodiment, as Figure 1 shown, a crucible 9 is provided in the main furnace chamber of the single crystal silicon growth furnace of the present invention, and the crucible 9 can be rotated and lifted. Specifically, the driving mechanism for driving the crucible 9 to lift can adopt screw driving, hydraulic driving or other lifting driving structures. During the crystal growth process of the single crystal silicon material in the crucible 9, in order to cooperate with the consistent height of the crystal growth line, the crucible 9 needs to be lifted synchronously.

[0037] In this embodiment, as Figure 1 and Figure 2 shown, a heat field 12 is installed in the main furnace chamber, and a leakage-proof liquid chassis 13 is installed at the bottom of the furnace bottom 4. Among them, the heat field 12 is evenly arranged in the main furnace chamber and is located outside the crucible 9. The function of the heat field 12 is to provide a stable temperature field so that the single crystal silicon material in the crucible can be melted for crystal growth. The leakage-proof liquid chassis 13 is located below the crucible 9 and is used to catch the spilled or overflowed silicon material liquid, improving the safety performance. Among them, the specific material of the leakage-proof liquid chassis 13 can adopt one of graphite, quartzite, asbestos, or carbon-carbon material or other materials with high temperature resistance, corrosion resistance, and chemical resistance.

[0038] In this embodiment, in order to meet the requirements of producing integrated circuits and semiconductor silicon products, as Figure 1 and Figure 3 shown, the single crystal silicon growth furnace of the present invention further includes a semiconductor magnetic field 6, and the semiconductor magnetic field 6 can be located outside or inside the main furnace chamber. Figure 1 and Figure 3 Shown as one of the embodiments, wherein the semiconductor magnetic field 6 is installed outside the main furnace chamber, the construction and installation are simple, and the semiconductor magnetic field 6 is fixed on the operation platform 11, improving the overall stability.

[0039] In this embodiment, as Figure 1 and Figure 3As shown, by fixing the magnetic field 6 on the operating platform 11 and sharing the load of the foundation per unit area, the overall stability of the main furnace chamber can be improved, thereby avoiding the impact of the defect rate caused by the shaking and tilting of the main furnace chamber during the crystal growth process in the crucible due to earthquakes or other reasons. At the same time, compared with the original single crystal furnace, the auxiliary furnace chamber 2 and the furnace barrel 5 are lighter, lower and more stable, thereby improving the yield and safety of the single crystal silicon body. The original base-type single crystal furnace structure has a high height of the auxiliary furnace chamber 2, and during the crystal growth process, the weight of the upper part of the auxiliary furnace chamber 2 becomes heavier over time, which is prone to safety accidents such as tilting and leakage.

[0040] In addition, the semiconductor magnetic field 6 of the present invention can also be installed on the inner side of the main furnace chamber. Installing it on the inner side not only reduces the equipment footprint, but also reduces the equipment modification cost. At the same time, the magnetic field is installed in the furnace drum, and there is no problem of the furnace drum weakening the magnetic field. Therefore, only a smaller current is needed to achieve the same intensity of the magnetic field. At the same time, due to the reduction of the magnetic field radius, the magnetic field energy consumption can be further reduced. Therefore, the energy consumption of the built-in magnetic field is greatly reduced compared to the external magnetic field.

[0041] In this embodiment, Figure 1 and Figure 3 As shown, the single crystal silicon growth furnace of the present invention also includes a feeding device 3, which is connected to the crucible 9 in the main furnace chamber and is used to feed into the crucible 9. The installation of the feeding device 3 can change the process mode in the existing production process that requires taking the rod and then feeding. The feeding device 3 can be used to feed the crucible 9 in real time, thereby reducing the volume of the crucible, thereby reducing the overall weight of the equipment, and avoiding safety accidents caused by the tipping of a large-volume crucible. At the same time, since the feeding device 3 is used to feed the crucible 9 in real time, it can ensure that the line position of the long crystal rod in the crucible is consistently maintained at a certain height, thereby stabilizing the production process.

[0042] At the same time, the feeding device 3 of the present invention can not only adopt the real-time feeding mode, but also feed when taking out the single crystal rod. When taking out the single crystal rod, the material can be simultaneously fed into the crucible at the bottom of the furnace after it descends through the connecting pipe, so that the feeding operation can be performed simultaneously during the process of rotating out the single crystal rod, effectively shortening the time consumed by the original rotating out of the single crystal rod and feeding operation, and improving production efficiency.

[0043] In this embodiment, in order to maintain the temperature in the main furnace chamber, an insulation layer is provided between the crucible 9 and the wall of the main furnace chamber. The insulation layer may be made of high temperature resistant solidified felt or soft felt structure, or other high temperature resistant materials.

[0044] In this embodiment, the secondary furnace chamber 2 can also adopt a multi-stage split structure. By means of the multi-stage split structure, the height of the secondary furnace chamber 2 can be changed (increased or decreased), and the diameter of the furnace cavity of the split secondary furnace chamber is adjustable, so as to be compatible with the growth of various large-diameter crystals. Embodiment

[0045] The above control method for a single-crystal growth furnace includes: Bottom lifting control, combined with Figure 3 and Figure 4 : Drive the bottom to lift through the bottom drive mechanism. At the same time, the bottom lift is located below the operation platform. At this time, if the crucible has not descended, the crucible can be quickly cooled; after the crucible cooling is completed, it descends, and the operator can clean, replace or add materials to the thermal field inside the bottom. After the operation is completed, the thermal field and the bottom rise and continue the operation; Lid and secondary furnace chamber control: First, open the isolation valve between the secondary furnace chamber and the lid, lift the secondary furnace chamber to the side, take out the grown single-crystal rod inside, and replace it with a new seed crystal; when stopping the furnace, open the isolation valve between the lid and the furnace barrel, maintain the lid and the internal flow guiding components, and finally close the isolation valve between the lid and the furnace barrel and the isolation valve between the secondary furnace chamber and the lid in sequence and continue the operation; The bottom lifting control and the lid and secondary furnace chamber control can be carried out synchronously.

[0046] The above is only a preferred embodiment of the present invention and does not impose any form of limitation on the present invention. Although the present invention has been disclosed above with a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art can make some changes or modifications to the above-disclosed technical content to make equivalent embodiments with equivalent changes within the scope of the technical solution of the present invention. However, as long as the content does not depart from the technical solution of the present invention, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention still fall within the scope of the technical solution of the present invention.

Claims

1. A single-crystal silicon growth furnace, comprising a main furnace chamber and an auxiliary furnace chamber, the main furnace chamber being in communication with the auxiliary furnace chamber, characterized in that: The main furnace chamber includes a furnace cover, a furnace cylinder, and a furnace bottom. The furnace cover is detachably connected to one side of the furnace cylinder, and the furnace bottom is detachably connected to the other side of the furnace cylinder.

2. The single-crystal silicon growth furnace according to claim 1, wherein: It further includes an operation platform, which is located between the furnace cover and the furnace bottom.

3. A single-crystal silicon growth furnace according to claim 1, characterized in that: It further includes a furnace bottom driving mechanism for driving the furnace bottom to lift and lower.

4. A single crystal silicon growth furnace according to claim 1, characterized in that: A crucible is provided in the main furnace chamber, and the crucible can rotate and lift.

5. A single-crystal silicon growth furnace according to claim 1, characterized in that: A thermal field is installed in the main furnace chamber, and a liquid leakage prevention chassis is installed at the bottom of the furnace bottom.

6. A single-crystal silicon growth furnace according to claim 1, characterized in that: It further includes a semiconductor magnetic field, which is located outside or inside the main furnace chamber.

7. A single-crystal silicon growth furnace according to claim 1, characterized in that: It further includes a feeding device, which is communicated with the crucible in the main furnace chamber for feeding materials into the crucible.

8. A single-crystal silicon growth furnace according to claim 1, characterized in that: A heat insulation layer is provided between the crucible and the inner wall of the furnace chamber of the main furnace.

9. A single crystal silicon growth furnace according to claim 1, characterized in that: The furnace cylinder adopts a split structure, including a plurality of interconnected split structures; under the condition that the total height of the single crystal furnace remains unchanged, the maximum charging amount of the thermal field is controlled by adjusting the height of the furnace cylinder, and the height of the existing furnace cylinder is changed by increasing / decreasing the split structure of the furnace cylinder, so as to be compatible with the installation of thermal fields of different sizes and heights.

10. A control method for a single crystal silicon growth furnace, characterized in that: It includes: Furnace bottom lifting control: The furnace bottom is driven to lift and lower by the furnace bottom driving mechanism. At the same time, the furnace bottom lifting is located below the operation platform. At this time, if the crucible does not descend, the crucible can be quickly cooled. After the crucible cooling is completed, it descends. The operator can clean, replace, or feed materials to the thermal field in the furnace bottom. After the operation is completed, the thermal field and the furnace bottom rise to continue the operation. Furnace cover and auxiliary furnace chamber control: First, open the isolation valve between the auxiliary furnace chamber and the furnace cover, hoist the auxiliary furnace chamber to the side, take out the grown single crystal rod inside, and replace it with a new seed crystal; when stopping the furnace, open the isolation valve between the furnace cover and the furnace cylinder, maintain the furnace cover and the internal diversion components, and finally close the isolation valve between the furnace cover and the furnace cylinder and the isolation valve between the auxiliary furnace chamber and the furnace cover in sequence to continue the operation. The furnace bottom lifting control and the furnace cover and auxiliary furnace chamber control can be carried out synchronously.

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