Optimization method for semiconductor refrigeration part and semiconductor refrigeration part

Abstract

The invention relates to the technical field of semiconductor refrigeration, and discloses an optimization method for a semiconductor refrigeration part, the semiconductor refrigeration part comprises a substrate, and the optimization method comprises the following steps: obtaining a target working parameter and an actual working temperature of the semiconductor refrigeration part; according to the actual working temperature, actual working parameters of the semiconductor refrigeration part are determined; according to the actual working parameters and the target working parameters, the size of the substrate is optimized, and optimized substrate size parameters are obtained; and according to the optimized substrate size parameters, the semiconductor refrigeration part is adjusted, and the optimized semiconductor refrigeration part is obtained. The size parameters of the substrate of the semiconductor refrigeration part are adjusted according to the actual working parameters of the semiconductor refrigeration part, so that the cold end heat dissipation capacity and the hot end heat dissipation capacity of the semiconductor refrigeration part are adjusted. The heat dissipation capacity of the hot end and the heat dissipation capacity of the cold end both meet the requirements, so that the problem of material waste is reduced, and the refrigeration requirement of the semiconductor refrigeration part is met. The invention further discloses a semiconductor refrigeration part.

Description

Technical Field

[0001] This application relates to the technical field of semiconductor refrigeration, for example, to an optimization method for a semiconductor refrigeration component and a semiconductor refrigeration component. Background Art

[0002] Currently, refrigeration appliances such as refrigerators and freezers are usually used to store items such as food materials, and the refrigeration system in the refrigeration appliance is made up of devices such as a compressor, a condenser, and an evaporator, occupying a relatively large space.

[0003] In the related art, the cold end of a semiconductor refrigeration component is used to provide a refrigeration function inside the refrigeration appliance. The semiconductor refrigeration component is composed of a cold end substrate, a hot end substrate, and semiconductor particles disposed between the cold end substrate and the hot end substrate. After producing the cold end substrate, the hot end substrate, and the semiconductor particles according to a preset size, the opposite ends of the semiconductor particles are respectively welded to the cold end substrate and the hot end substrate to form a semiconductor refrigeration component. The semiconductor refrigeration component is installed in a refrigeration device to achieve refrigeration.

[0004] In the process of implementing the embodiments of the present disclosure, it is found that there are at least the following problems in the related art:

[0005] Combined with the formula Qh = Qc + W (where Qh is the heat dissipation at the hot end, Qc is the refrigeration capacity at the cold end, that is, the heat dissipation at the cold end, and W is the input electric work), it can be known that after the semiconductor refrigeration component is powered on and working, the heat generated at the hot end of a single-stage semiconductor refrigeration component is greater than the cold quantity generated at the cold end. In this way, when the heat dissipation capacity at the hot end meets the requirements, the heat dissipation capacity at the cold end is too large, resulting in waste of the cold end substrate material. When the heat dissipation capacity at the cold end meets the requirements, the heat dissipation capacity at the hot end is insufficient, resulting in too low heat dissipation efficiency at the hot end of the semiconductor refrigeration component, and further resulting in poor refrigeration performance of the semiconductor refrigeration component.

[0006] It should be noted that the information disclosed in the above background art section is only used to enhance the understanding of the background of the present application, and thus may include information that does not constitute the prior art known to those of ordinary skill in the art. Summary of the Invention

[0007] To have a basic understanding of some aspects of the disclosed embodiments, a simple summary is given below. The summary is not a general review, nor is it intended to identify key / important constituent elements or delineate the protection scope of these embodiments, but rather serves as a preamble to the subsequent detailed description.

[0008] The embodiments of the present disclosure provide an optimization method for a semiconductor refrigeration component and a semiconductor refrigeration component. By performing a differential design on the substrate of the semiconductor refrigeration component, the heat dissipation efficiency of the semiconductor refrigeration component is improved, and the refrigeration capacity of the semiconductor refrigeration component meets the requirements of different refrigeration devices, improving the practicability of the semiconductor refrigeration chip.

[0009] In some embodiments, an optimization method for a semiconductor refrigeration component is provided. The semiconductor refrigeration component includes a substrate. The optimization method includes: obtaining the target operating parameters and the actual operating temperature of the semiconductor refrigeration component; determining the actual operating parameters of the semiconductor refrigeration component according to the actual operating temperature; optimizing the size of the substrate according to the actual operating parameters and the target operating parameters to obtain the optimized substrate size parameters; and adjusting the semiconductor refrigeration component according to the optimized substrate size parameters to obtain the optimized semiconductor refrigeration component.

[0010] Optionally, the actual operating parameters include the actual refrigerating capacity, the actual heating capacity, and the actual energy efficiency ratio. Determining the actual operating parameters of the semiconductor refrigeration component according to the actual operating temperature includes: calculating the actual refrigerating capacity and the actual heating capacity of the semiconductor refrigeration component according to the actual operating temperature; and calculating the actual energy efficiency ratio of the semiconductor refrigeration component according to the actual refrigerating capacity and the actual heating capacity.

[0011] Optionally, the substrate includes a cold-end substrate and a hot-end substrate, and the actual operating temperature includes the temperature T CSW of the outer surface of the actual cold-end substrate, the temperature T CSN of the inner surface of the actual cold-end substrate, the temperature T HSW of the outer surface of the actual hot-end substrate, and the temperature T HSN of the inner surface of the actual hot-end substrate. Calculating the actual refrigerating capacity and the actual heating capacity of the semiconductor refrigeration component according to the actual operating temperature includes: calculating the difference ΔT CSW between T CSN and T CS ; calculating the difference ΔT HSW between T HSN and T HS ; calculating the actual refrigerating capacity Q CS based on Q CS = ΔT C × A C × λ C / σ CS ; where A C is the area of the cold-end substrate, λ C is the thermal conductivity of the cold-end substrate, and σ C is the thickness of the cold-end substrate; calculating the actual heating capacity Q HS based on Q HS = ΔT H × A H × λ H / σ HS ; where A H is the area of the hot-end substrate, λ H is the thermal conductivity of the hot-end substrate, and σ H is the thickness of the hot-end substrate.

[0012] Optionally, according to the actual refrigerating capacity and actual heating capacity, calculate the actual energy efficiency ratio of the thermoelectric cooling element, including: based on COP S =Q CS / (Q HS -Q CS ), calculate the actual energy efficiency ratio COP S .

[0013] Optionally, the actual working parameters include the actual refrigerating capacity Q CS and the actual energy efficiency ratio COP S , and the target working parameters include the target refrigerating capacity Q CY and the target refrigerating energy efficiency ratio COP Y . According to the actual working parameters and the target working parameters, optimize the size of the substrate to obtain the optimized substrate size parameters, including: when Q CS is less than K1×Q CY , based on the actual working parameters and the target working parameters, optimize the size of the substrate to obtain the optimized first substrate size parameters; where K1 is the first coefficient; when Q CS is greater than or equal to K2×Q CY , and COP S is less than COP Y , based on the actual working parameters and the target working parameters, optimize the size of the substrate to obtain the optimized second substrate size parameters; where K2 is the second coefficient.

[0014] Optionally, the target working parameters include the target working temperature, the target outer surface temperature T HYW of the hot end substrate, and the target outer surface temperature T CYW of the cold end substrate. The optimized first substrate size parameters include the optimized first substrate thickness parameter and the optimized first substrate area parameter. Based on the actual working parameters and the target working parameters, optimize the size of the substrate to obtain the optimized first substrate size parameters, including: calculate Δσ1 = σ×ΔT / (T HYW -T CYW ); where σ is the thickness of the substrate, ΔT is the difference between the actual working temperature and the target working temperature of the substrate, and Δσ1 is the first thickness optimization parameter; calculate σ - Δσ1 as the optimized first substrate thickness parameter; when the updated substrate thickness is less than the thickness threshold, do not adjust the thickness of the cold end substrate, calculate ΔA1 = A×ΔT / (T HYW -T CYW ); where A is the area of the substrate, ΔA1 is the first area optimization parameter; calculate A + ΔA1 as the optimized first substrate area parameter.

[0015] Optionally, the substrate thickness σ includes the hot end substrate thickness σ Hand the thickness σ of the cold-end substrate C , the substrate area A includes the hot-end substrate area A H and the cold-end substrate area A C , before optimizing the size of the substrate to obtain the optimized first substrate size parameters, it further includes: calculating the absolute value of the difference between the actual operating temperature of the cold end and the target operating temperature of the cold end as the first difference ΔT1; calculating the absolute value of the difference between the actual operating temperature of the hot end and the target operating temperature of the hot end as the second difference ΔT2; wherein, when ΔT1 > ΔT2, σ = σ C , A = A C , Δσ1 = Δσ C1 , ΔA1 = ΔA C1 , ΔT = ΔT1; when ΔT2 > ΔT1, σ = σ H , A = A H , Δσ1 = Δσ H1 , ΔA1 = ΔA H1 , ΔT = ΔT2.

[0016] Optionally, the actual operating parameters include the actual coefficient of performance COP S , and the target operating parameters include the target coefficient of performance COP Y , based on the actual operating parameters and the target operating parameters, optimizing the size of the substrate to obtain the optimized second substrate size parameters, including: calculating Δσ2 = σ × (COP S / COP Y ); wherein, σ is the thickness of the substrate, and Δσ2 is the second thickness optimization parameter; calculating σ - Δσ2 as the optimized second substrate thickness parameter; when the updated substrate thickness is less than the thickness threshold, the thickness of the cold-end substrate is not adjusted, and calculating ΔA2 = A × (COP S / COP Y ); wherein, A is the area of the substrate, and ΔA2 is the second area optimization parameter; calculating A + ΔA as the optimized second substrate area parameter.

[0017] Optionally, the optimized substrate size parameters include the optimized area parameter and the optimized thickness parameter. According to the optimized substrate size parameters, adjusting the thermoelectric cooler to obtain the optimized thermoelectric cooler, including: adjusting the thickness of the substrate according to the optimized thickness parameter; adjusting the area of the substrate by adjusting the diagonal of the cold-end substrate according to the optimized area parameter to obtain the optimized thermoelectric cooler.

[0018] In some embodiments, a thermoelectric cooler is provided, which is designed and manufactured by using the optimization method for the thermoelectric cooler described in any one of the above embodiments.

[0019] The optimization method and the semiconductor refrigeration device provided by the embodiments of the present disclosure can achieve the following technical effects:

[0020] The optimization method for the semiconductor refrigeration device provided by the embodiments of the present disclosure determines whether the semiconductor refrigeration component meets the target working parameters of the refrigeration device, that is, whether it meets the target working requirements, according to the actual working temperature of the semiconductor refrigeration device. When the target working requirements are not met, the heat dissipation capabilities at both ends of the semiconductor refrigeration device are adjusted by adjusting the size parameters of the substrate, so that the heat dissipation capabilities at the hot end and the cold end both meet the requirements. Furthermore, the actual working temperature of the semiconductor refrigeration device meets the target working requirements, the refrigeration requirements of the semiconductor refrigeration device are met, and the problem of material waste is reduced.

[0021] The above general description and the following description are only exemplary and explanatory, and are not used to limit the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] One or more embodiments are illustrated by corresponding drawings. These exemplary illustrations and the drawings do not constitute a limitation on the embodiments. Elements with the same reference numerals in the drawings are shown as similar elements. The drawings do not constitute a scale limitation, and:

[0023] Figure 1 is a schematic structural diagram of a semiconductor refrigeration device in the related art provided by the embodiments of the present disclosure;

[0024] Figure 2 is a schematic diagram of an optimization method for a semiconductor refrigeration device provided by the embodiments of the present disclosure;

[0025] Figure 3 is a schematic diagram of another optimization method for a semiconductor refrigeration device provided by the embodiments of the present disclosure;

[0026] Figure 4 is a schematic diagram of another optimization method for a semiconductor refrigeration device provided by the embodiments of the present disclosure;

[0027] Figure 5 is a schematic diagram of another optimization method for a semiconductor refrigeration device provided by the embodiments of the present disclosure;

[0028] Figure 6 is a schematic diagram of another optimization method for a semiconductor refrigeration device provided by the embodiments of the present disclosure;

[0029] Figure 7 is a schematic diagram of another optimization method for a semiconductor refrigeration device provided by the embodiments of the present disclosure. DETAILED DESCRIPTION

[0030] In order to more comprehensively understand the features and technical content of the embodiments of the present disclosure, the implementation of the embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. The accompanying drawings are for reference and illustration purposes only and are not used to limit the embodiments of the present disclosure. In the following technical description, for the sake of explanation, numerous details are provided to give a full understanding of the disclosed embodiments. However, one or more embodiments may still be implemented without these details. In other cases, well-known structures and devices may be shown in a simplified manner to simplify the drawings.

[0031] In the specification and claims of the embodiments of the present disclosure and the above-mentioned accompanying drawings, terms such as "first", "second", etc. are used to distinguish similar objects and do not necessarily have to be used to describe a specific order or sequence. It should be understood that such data can be interchanged under appropriate circumstances so as to implement the embodiments of the present disclosure described herein. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion.

[0032] Unless otherwise specified, the term "plurality" means two or more.

[0033] In the embodiments of the present disclosure, the character " / " indicates that the objects before and after are in an "or" relationship, or indicates that the objects before and after are in a "divided by" relationship. For example, A / B means: A or B, or means: A divided by B.

[0034] The term "and / or" is a description of the association relationship of objects and indicates that three relationships can exist. For example, A and / or B means: A or B, or, A and B these three relationships.

[0035] The term "corresponding" may refer to an association relationship or a binding relationship. That A corresponds to B means that there is an association relationship or a binding relationship between A and B.

[0036] Figure 1 is a schematic structural diagram of a semiconductor refrigeration component in the related art provided by the embodiments of the present disclosure. As Figure 1 shown, the semiconductor refrigeration component includes a substrate 10 and semiconductor particles 20. The substrate 10 includes a cold-end substrate 101 and a hot-end substrate 102. The semiconductor particles 20 are disposed between the cold-end substrate 101 and the hot-end substrate 102, and the opposite ends of the semiconductor particles 20 are respectively welded to the cold-end substrate 101 and the hot-end substrate 102 to form a semiconductor refrigeration component.

[0037] Specifically, in the related art, the materials of the cold-end substrate 101 and the hot-end substrate 102 are the same, that is, the thermal conductivity coefficient λ C of the cold-end substrate is the same as the thermal conductivity coefficient λ H of the hot-end substrate. The thickness σ of the cold-end substrate 101 and the hot-end substrate 102 is the same, that is, the thickness σ CThe same as the thickness σ of the hot-end substrate H The cold-end substrate 101 has the same area size A as the hot-end substrate 102, that is, the thickness A of the cold-end substrate C The same as the thickness A of the hot-end substrate H The same.

[0038] Therefore, when the semiconductor refrigeration device is powered on, the heat generation amount at the hot end will be greater than the refrigeration amount at the cold end. Furthermore, the heat dissipation capacity at the hot end needs to be greater than that at the cold end. Among them, the product of the heat exchange area and the thermal conductivity approximately represents the heat dissipation capacity, that is, the expression of the heat dissipation capacity is: A×λ / σ. Since the materials of the substrates are the same, that is, the thermal conductivity λ of the cold-end substrate C The same as the thermal conductivity λ of the hot-end substrate H The same, so what affects the heat exchange capacity is the substrate thickness and the heat exchange area.

[0039] However, the thickness σ of the cold-end substrate in the related art C The same as the thickness σ of the hot-end substrate H The same, and the thickness A of the cold-end substrate C The same as the thickness A of the hot-end substrate H The same, resulting in the same heat dissipation capacity at the cold end and the hot end. There will be a problem that when the heat dissipation capacity at the hot end meets the requirements, the heat dissipation capacity at the cold end is too large, resulting in waste of materials. When the heat dissipation capacity at the cold end meets the requirements, the heat dissipation capacity at the hot end is insufficient, that is, it cannot meet the refrigeration requirements of the semiconductor refrigeration device.

[0040] Therefore, the embodiments of the present disclosure propose an optimization method for a semiconductor refrigeration device. By adjusting the size parameters of the substrate of the semiconductor refrigeration device according to the actual working parameters of the semiconductor refrigeration device, the heat dissipation capacity at the cold end and the hot end of the semiconductor refrigeration device are adjusted. So that the heat dissipation capacity at the hot end and the cold end both meet the requirements, to reduce the problem of material waste and meet the refrigeration requirements of the semiconductor refrigeration device.

[0041] Combined with Figure 1 The semiconductor refrigeration device shown, the embodiments of the present disclosure provide an optimization method for a semiconductor refrigeration device, as Figure 2 shown, the optimization method includes:

[0042] S201, Obtain the target working parameters and the actual working temperature of the semiconductor refrigeration device.

[0043] S202, Determine the actual working parameters of the semiconductor refrigeration device according to the actual working temperature.

[0044] S203, Optimize the size of the substrate according to the actual working parameters and the target working parameters to obtain the optimized substrate size parameters.

[0045] S204. Adjust the thermoelectric cooler according to the optimized substrate size parameters to obtain an optimized thermoelectric cooler.

[0046] The optimization method for a thermoelectric cooler provided by an embodiment of the present disclosure determines whether the thermoelectric cooling module meets the target working parameters of the refrigeration device, that is, whether it meets the target working requirements, by according to the actual working temperature of the thermoelectric cooler. In the case where the target working requirements are not met, by adjusting the size parameters of the substrate, the heat dissipation capabilities at both ends of the thermoelectric cooler are adjusted so that the heat dissipation capabilities at the hot end and the cold end both meet the requirements. Furthermore, the actual working temperature of the thermoelectric cooler meets the target working requirements, meets the refrigeration requirements of the thermoelectric cooler, and reduces the problem of material waste.

[0047] Specifically, the size parameters of the cold-end substrate can be adjusted alone, or the size parameters of the hot-end substrate can be adjusted alone, or the size parameters of the cold-end substrate and the hot-end substrate can be adjusted together.

[0048] Combined with Figure 3 As shown, another optimization method for a thermoelectric cooler provided by an embodiment of the present disclosure includes:

[0049] S301. Obtain the target working parameters and the actual working temperature of the thermoelectric cooler.

[0050] S302. Calculate the actual refrigerating capacity and the actual heating capacity of the thermoelectric cooler according to the actual working temperature.

[0051] S303. Calculate the actual energy efficiency ratio of the thermoelectric cooler according to the actual refrigerating capacity and the actual heating capacity.

[0052] S304. Optimize the size of the substrate according to the actual refrigerating capacity, the actual energy efficiency ratio, and the target working parameters to obtain optimized substrate size parameters.

[0053] S305. Adjust the thermoelectric cooler according to the optimized substrate size parameters to obtain an optimized thermoelectric cooler.

[0054] In this embodiment, by calculating the actual cooling capacity and actual heating capacity of the thermoelectric cooler according to the actual working temperature, it is convenient to determine whether the actual working state of the thermoelectric cooler meets the target working requirements, that is, whether the actual working parameters of the thermoelectric cooler meet the target working requirements. By calculating the actual energy efficiency ratio of the thermoelectric cooler, it is further determined whether the actual working parameters of the thermoelectric cooler meet the target working requirements. And, in the case that the actual working parameters of the thermoelectric cooler do not meet the target working requirements, according to the actual cooling capacity and actual energy efficiency ratio, the substrate size is optimized and adjusted so that the heat dissipation capabilities of both the hot end and the cold end meet the requirements. Furthermore, the actual working temperature of the thermoelectric cooler meets the target working requirements, the refrigeration requirements of the thermoelectric cooler are met, and the problem of material waste is reduced.

[0055] Optionally, the substrate includes a cold-end substrate and a hot-end substrate, and the actual working temperature includes the temperature T CSW of the outer surface of the actual cold-end substrate, the temperature T CSN of the inner surface of the actual cold-end substrate, the temperature T HSW of the outer surface of the actual hot-end substrate, and the temperature T HSN of the inner surface of the actual hot-end substrate. According to the actual working temperature, calculating the actual cooling capacity and actual heating capacity of the thermoelectric cooler includes: calculating the difference ΔT CSW between T CSN and T CS ; calculating the difference ΔT HSW between T HSN and T HS ; based on Q CS = ΔT CS × A C × λ C / σ C , calculating the actual cooling capacity Q CS ; where A C is the area of the cold-end substrate, λ C is the thermal conductivity of the cold-end substrate, and σ C is the thickness of the cold-end substrate; based on Q HS = ΔT HS × A H × λ H / σ H , calculating the actual heating capacity Q HS ; where A H is the area of the hot-end substrate, λ H is the thermal conductivity of the hot-end substrate, and σ H is the thickness of the hot-end substrate.

[0056] In this embodiment, by calculating the temperature difference between the inner surface and the outer surface of the actual cold-end substrate, and calculating the temperature difference between the inner surface and the outer surface of the actual hot-end substrate, it is convenient to calculate the actual heat generation and actual refrigeration capacity of the semiconductor refrigeration element. Furthermore, it is convenient to determine whether the actual working state of the semiconductor refrigeration element meets the target working requirements, that is, whether the actual working parameters of the semiconductor refrigeration element meet the target working requirements.

[0057] Combined with Figure 4 shown, the embodiment of the present disclosure provides another optimization method for a semiconductor refrigeration element, including:

[0058] S401, obtaining the target working parameters and actual working temperature of the semiconductor refrigeration element.

[0059] S402, calculating the difference ΔT CSW between T CSN . CS .

[0060] S403, calculating the difference ΔT HSW between T HSN . HS .

[0061] S404, based on Q CS =ΔT CS ×A C ×λ C / σ C , calculating the actual refrigeration capacity Q CS ; where A C is the area of the cold-end substrate, λ C is the thermal conductivity of the cold-end substrate, and σ C is the thickness of the cold-end substrate.

[0062] S405, based on Q HS =ΔT HS ×A H ×λ H / σ H , calculating the actual heat generation Q HS ; where A H is the area of the hot-end substrate, λ H is the thermal conductivity of the hot-end substrate, and σ H is the thickness of the hot-end substrate.

[0063] S406, based on COP S =Q CS / (Q HS -Q CS ), calculating the actual coefficient of performance COP S .

[0064] S407. Optimize the size of the substrate according to the actual refrigerating capacity, actual energy efficiency ratio, and target working parameters to obtain the optimized substrate size parameters.

[0065] S408. Adjust the semiconductor refrigeration component according to the optimized substrate size parameters to obtain the optimized semiconductor refrigeration component.

[0066] In this embodiment, by calculating the actual refrigerating capacity, actual heating capacity, and actual energy efficiency ratio, it is possible to better determine whether the current actual working parameters of the semiconductor refrigeration component meet the target working requirements. This facilitates adjusting the substrate size of the semiconductor refrigeration component when the target working requirements are not met, so that the actual working parameters of the semiconductor refrigeration component meet the target working requirements.

[0067] Combined with Figure 5 As shown, another optimization method for the semiconductor refrigeration component provided by the embodiment of the present disclosure, the actual working parameters include the actual refrigerating capacity Q CS and the actual energy efficiency ratio COP S , the target working parameters include the target refrigerating capacity Q CY and the target refrigeration energy efficiency ratio COP Y , and the optimization method includes:

[0068] S501. Obtain the target working parameters and actual working temperature of the semiconductor refrigeration component.

[0069] S502. Determine the actual working parameters of the semiconductor refrigeration component according to the actual working temperature.

[0070] S503. When Q CS is less than K1 × Q CY , optimize the size of the substrate based on the actual working parameters and target working parameters to obtain the optimized first substrate size parameters; where K1 is the first coefficient.

[0071] In this step, when Q CS is less than K1 × Q CY , it indicates that the actual refrigerating capacity of the semiconductor refrigeration component does not meet the target refrigerating capacity. Therefore, it is necessary to adjust the substrate size of the semiconductor refrigeration component so that the actual refrigerating capacity of the semiconductor refrigeration component meets the target refrigerating capacity of the refrigeration equipment, that is, the actual working parameters of the semiconductor refrigeration component meet the target working parameters.

[0072] Optionally, the value range of K1 includes: 0.9 to 0.95. The specific values of K1 include: 0.9, 0.92, or 0.95.

[0073] S504. When Q CS is greater than or equal to K2 × Q CY , and COP S is less than COPY In the case of, based on the actual working parameters and the target working parameters, optimize the size of the substrate to obtain the optimized second substrate size parameter; where K2 is the second coefficient.

[0074] In this step, at Q CS greater than or equal to K2×Q CY , and COP S less than COP Y In the case of, it indicates that the actual cooling capacity of the semiconductor refrigeration component has met the target cooling capacity, but the actual energy efficiency ratio has not met the target energy efficiency ratio, that is, the actual working state has not met the target demand state. Furthermore, it is necessary to adjust the substrate size of the semiconductor refrigeration component so that the actual energy efficiency ratio of the semiconductor refrigeration component meets the target energy efficiency ratio of the refrigeration device, that is, the actual working parameters of the semiconductor refrigeration component meet the target working parameters of the refrigeration device.

[0075] Optionally, the value range of K2 includes: 0.9 to 0.95. The specific values of K2 include: 0.9, 0.92 or 0.95.

[0076] S505, according to the optimized substrate size parameter, adjust the semiconductor refrigeration component to obtain the optimized semiconductor refrigeration component.

[0077] In this embodiment, by judging whether the current working parameters of the semiconductor refrigeration component meet the target working parameters of the refrigeration device according to the actual cooling capacity and the actual energy efficiency ratio, the accuracy of judging whether the working state of the semiconductor refrigeration component meets the target working requirements of the refrigeration device is improved. And, in order to facilitate the adjustment of the actual working temperature of the semiconductor refrigeration component by adjusting the size parameter of the substrate in the case of not meeting the target working requirements, so as to realize the differential design of the semiconductor refrigeration component. Meet the target working requirements of different refrigeration devices and improve the practicability of the semiconductor refrigeration chip.

[0078] Optionally, the target working parameters include the target working temperature, the target outer surface temperature T of the hot-end substrate HYW and the target outer surface temperature T of the cold-end substrate CYW , the optimized first substrate size parameter includes the optimized first substrate thickness parameter and the optimized first substrate area parameter. Based on the actual working parameters and the target working parameters, optimize the size of the substrate to obtain the optimized first substrate size parameter, including: calculate Δσ1 = σ×ΔT / (T HYW -T CYW); where, σ is the thickness of the substrate, ΔT is the difference between the actual working temperature and the target working temperature of the substrate, and Δσ1 is the first thickness optimization parameter; calculate σ - Δσ1 as the optimized first substrate thickness parameter; in the case where the updated substrate thickness is less than the thickness threshold, do not adjust the thickness of the cold-end substrate, and calculate ΔA1 = A×ΔT / (T HYW -T CYW ); where, A is the area of the substrate, and ΔA1 is the first area optimization parameter; calculate A + ΔA1 as the optimized first substrate area parameter.

[0079] In this embodiment, during the process of adjusting the size parameters of the substrate, the thickness of the substrate is preferentially adjusted so that the actual working parameters of the thermoelectric cooler after adjustment meet the target working parameters. Further, in the case where the adjusted thickness is less than the thickness threshold, that is, when the thickness cannot be further reduced, the area of the substrate is adjusted to adjust the substrate parameters so that the actual working parameters of the thermoelectric cooler after adjustment meet the target working parameters.

[0080] In this way, the actual working parameters of the thermoelectric cooler after adjustment are made to meet the target working requirements of the refrigeration equipment, realizing the differential design of the thermoelectric cooler. Meeting the target working requirements of different refrigeration equipment and improving the practicability of the thermoelectric cooler.

[0081] Specifically, the thickness threshold is 0.1 mm (millimeter).

[0082] Optionally, in the case where the area is greater than the area threshold, the actual working parameters of the thermoelectric cooler are adjusted by adjusting the size of the semiconductor particles or the number of pairs of semiconductor particles.

[0083] Specifically, the area threshold is twice the initial area of the substrate.

[0084] Specifically, when reducing the thickness of the cold-end substrate, that is, σ C becomes smaller, based on the formula Q CS =ΔT CS ×A C ×λ C / σ C it can be seen that since the area A C of the cold-end substrate remains unchanged and the material of the cold-end substrate remains unchanged, that is, λ C remains unchanged, so Q CS will increase. That is, the refrigeration capacity of the thermoelectric cooler is improved so that the actual refrigeration capacity of the thermoelectric cooler meets the target refrigeration capacity. And it can reduce the waste of the cold-end substrate material.

[0085] When increasing the area of the cold-end substrate, that is, A C becomes larger, based on the formula Q CS= ΔT CS × A C × λ C / σ C It can be seen that due to the area σ of the cold-end substrate C remaining unchanged and the material of the cold-end substrate remaining unchanged, i.e., λ C remaining unchanged, so Q CS will increase. That is, the refrigerating capacity of the semiconductor refrigeration component is improved so that the actual refrigerating capacity of the semiconductor refrigeration component meets the target refrigerating capacity.

[0086] Specifically, after reducing the thickness of the hot-end substrate (i.e., σ H becomes smaller), the heat conduction speed between the inner layer and the outer layer of the hot-end substrate is faster, so as to improve the heat dissipation capacity of the hot end of the semiconductor refrigeration component, and further increase the heat dissipation quantity Q H of the hot end, and then increase the heat dissipation quantity of the cold end, that is, the cold-end refrigerating capacity Q C so that the actual refrigerating capacity of the semiconductor refrigeration component meets the target refrigerating capacity.

[0087] After increasing the area of the cold-end substrate (i.e., A H becomes larger), the heat dissipation area of the hot-end substrate is larger, so as to increase the heat dissipation quantity Q H of the hot end, and then increase the heat dissipation quantity of the cold end, that is, the cold-end refrigerating capacity Q C so that the actual refrigerating capacity of the semiconductor refrigeration component meets the target refrigerating capacity.

[0088] Optionally, the substrate thickness σ includes the hot-end substrate thickness σ H and the cold-end substrate thickness σ C , the substrate area A includes the hot-end substrate area A H and the cold-end substrate area A C . Before optimizing the size of the substrate to obtain the optimized first substrate size parameter, it further includes: calculating the absolute value of the difference between the actual working temperature of the cold end and the target working temperature of the cold end as the first difference ΔT1; calculating the absolute value of the difference between the actual working temperature of the hot end and the target working temperature of the hot end as the second difference ΔT2; wherein, when ΔT1 > ΔT2, σ = σ C , A = A C , Δσ1 = Δσ C1 , ΔA1 = ΔA C1 , ΔT = ΔT1; when ΔT2 > ΔT1, σ = σ H , A = A H , Δσ1 = Δσ H1 , ΔA1 = ΔA H1 , ΔT = ΔT2.

[0089] In this embodiment, when ΔT1 > ΔT2, that is, the gap between the actual working temperature of the cold end and the target working temperature of the cold end is greater than the gap between the actual working temperature of the hot end and the target working temperature of the hot end, which means that the actual working temperature of the cold end is more inconsistent with the target working temperature required by the refrigeration device. At this time, it is necessary to adjust the size parameters of the cold-end substrate to increase the actual working temperature of the cold end, so as to increase the refrigeration capacity of the cold-end substrate and make the actual refrigeration capacity of the cold end meet the target refrigeration capacity of the cold end.

[0090] When ΔT2 > ΔT1, that is, the gap between the actual working temperature of the hot end and the target working temperature of the hot end is greater than the gap between the actual working temperature of the cold end and the target working temperature of the cold end, which means that the heat dissipation capacity of the hot end is poor, resulting in the refrigeration capacity of the cold end not being able to meet the target refrigeration capacity of the refrigeration device. At this time, it is necessary to adjust the size of the hot-end substrate to improve the heat dissipation capacity of the hot-end substrate and reduce the problem that the excessive heat dissipation capacity of the hot-end substrate leads to insufficient actual refrigeration capacity of the cold end, so that the actual refrigeration capacity of the cold end meets the target refrigeration capacity of the cold end.

[0091] Optionally, the actual working parameter includes the actual coefficient of performance COP S , and the target working parameter includes the target coefficient of performance COP Y . Based on the actual working parameter and the target working parameter, the size of the substrate is optimized to obtain the optimized second substrate size parameter, including: calculating Δσ2 = σ × (COP S / COP Y ); where σ is the thickness of the substrate and Δσ2 is the second thickness optimization parameter; calculating σ - Δσ2 as the optimized second substrate thickness parameter; when the updated substrate thickness is less than the thickness threshold, the thickness of the cold-end substrate is not adjusted, and calculating ΔA2 = A × (COP S / COP Y ); where A is the area of the substrate and ΔA2 is the second area optimization parameter; calculating A + ΔA as the optimized second substrate area parameter.

[0092] In this embodiment, by reducing the thickness of the substrate, the actual refrigeration capacity Q of the thermoelectric cooler is increased CS , and then combined with the formula COP S = Q CS / (Q HS - Q CS ), it can be known that the actual coefficient of performance increases, that is, COP S increases. So that the actual coefficient of performance of the thermoelectric cooler meets the target coefficient of performance.

[0093] Specifically, after reducing the thickness of the cold-end substrate, that is, σ C becomes smaller, based on the formula Q CS = ΔT CS × AC ×λ C / σ C It can be seen that due to the constant area A of the cold-end substrate C and the constant material of the cold-end substrate, i.e., λ C is constant, so Q CS will increase. Furthermore, based on the formula COP S =Q CS / (Q HS -Q CS ), it can be known that the actual energy efficiency ratio increases, i.e., COP S increases. So that the actual energy efficiency ratio of the semiconductor refrigeration element meets the target energy efficiency ratio.

[0094] After increasing the area of the cold-end substrate, i.e., A C becomes larger, based on the formula Q CS =ΔT CS ×A C ×λ C / σ C it can be seen that due to the constant area σ of the cold-end substrate C and the constant material of the cold-end substrate, i.e., λ C is constant, so Q CS will increase. Furthermore, based on the formula COP S =Q CS / (Q HS -Q CS ), it can be known that the actual energy efficiency ratio increases, i.e., COP S increases. So that the actual energy efficiency ratio of the semiconductor refrigeration element meets the target energy efficiency ratio.

[0095] Specifically, after reducing the thickness of the hot-end substrate (i.e., σ H becomes smaller), it causes the heat conduction speed between the inner layer and the outer layer of the hot-end substrate to be faster, so as to improve the heat dissipation capacity of the hot end of the semiconductor refrigeration element, and further increase the actual heat dissipation quantity Q HS of the hot end, and then increase the heat dissipation quantity of the cold end, i.e., the actual refrigeration quantity Q CS of the cold end. Furthermore, based on the formula COP S =Q CS / (Q HS -Q CS ), it can be known that the actual energy efficiency ratio increases, i.e., COP S increases. So that the actual energy efficiency ratio of the semiconductor refrigeration element meets the target energy efficiency ratio.

[0096] After increasing the area of the cold-end substrate (i.e., A H becomes larger), it causes the heat dissipation area of the hot-end substrate to be larger, so as to increase the actual heat dissipation quantity Q HS of the hot end, and then increase the heat dissipation quantity of the cold end, i.e., the actual refrigeration quantity Q CS. Further, based on the formula COP S = Q CS / (Q HS - Q CS ), it can be known that the actual coefficient of performance COP S increases to make the actual coefficient of performance of the thermoelectric cooler meet the target coefficient of performance.

[0097] Optionally, before optimizing the size of the substrate to obtain the optimized second substrate size parameter, it further includes: calculating the absolute value of the difference between the actual working temperature of the cold end and the target working temperature of the cold end as the first difference ΔT1; calculating the absolute value of the difference between the actual working temperature of the hot end and the target working temperature of the hot end as the second difference ΔT2; wherein, when ΔT1 > ΔT2, σ = σ C , A = A C , Δσ2 = Δσ C2 , ΔA2 = ΔA C2 ; when ΔT2 > ΔT1, σ = σ H , A = A H , Δσ2 = Δσ H2 , ΔA2 = ΔA H2 .

[0098] In this embodiment, when ΔT1 > ΔT2, that is, the gap between the actual working temperature of the cold end and the target working temperature of the cold end is greater than the gap between the actual working temperature of the hot end and the target working temperature of the hot end, that is, the actual working temperature of the cold end is more inconsistent with the target working temperature required by the refrigeration device. At this time, it is necessary to adjust the size parameter of the cold end substrate to increase the actual working temperature of the cold end, so as to increase the refrigeration capacity of the cold end substrate, and then increase the actual coefficient of performance of the thermoelectric cooler, so that the actual coefficient of performance of the cold end meets the target coefficient of performance of the cold end.

[0099] When ΔT2 > ΔT1, that is, the gap between the actual working temperature of the hot end and the target working temperature of the hot end is greater than the gap between the actual working temperature of the cold end and the target working temperature of the cold end, that is, the heat dissipation capacity of the hot end is poor, resulting in the refrigeration capacity of the cold end not meeting the target refrigeration capacity of the refrigeration device. At this time, it is necessary to adjust the size of the hot end substrate to improve the heat dissipation capacity of the hot end substrate and reduce the problem that the heat dissipation capacity of the hot end substrate is too large, resulting in insufficient actual refrigeration capacity of the cold end. Furthermore, the actual refrigeration capacity of the cold end is increased to increase the actual coefficient of performance of the thermoelectric cooler, so that the actual coefficient of performance of the cold end meets the target coefficient of performance of the cold end.

[0100] As shown in combination with Figure 6 , another optimization method for a thermoelectric cooler provided by an embodiment of the present disclosure includes:

[0101] S601, obtaining the target working parameters and actual working temperature of the thermoelectric cooler.

[0102] S602. Determine the actual operating parameters of the thermoelectric cooling device according to the actual operating temperature.

[0103] S603. Optimize the size of the substrate according to the actual operating parameters and the target operating parameters to obtain the optimized substrate size parameters. Among them, the optimized substrate size parameters include the optimized area parameter and the optimized thickness parameter.

[0104] S604. Adjust the thickness of the substrate according to the optimized thickness parameter.

[0105] S605. Adjust the area of the substrate by adjusting the diagonal of the cold-end substrate according to the optimized area parameter to obtain the optimized thermoelectric cooling device.

[0106] In this embodiment, by adjusting the thickness and area of the substrate of the thermoelectric cooling device, the actual cooling capacity and the actual energy efficiency ratio of the thermoelectric cooling device are improved, so that the actual operating parameters of the thermoelectric cooling device meet the target operating parameters, meet the cooling requirements of the thermoelectric cooling device, and reduce the problem of material waste.

[0107] Combined with Figure 7 As shown, another optimization method for a thermoelectric cooling device provided by an embodiment of the present disclosure includes:

[0108] S701. Obtain the target energy efficiency ratio COP Y of the thermoelectric cooling chip, the target cooling capacity Q CY , the target outer surface temperature T CYW of the cold-end substrate, the target outer surface temperature T HYW of the hot-end substrate, the preset temperature difference ΔT CY between the inner and outer surfaces of the cold-end substrate, the preset temperature difference ΔT HY between the inner and outer surfaces of the hot-end substrate, and the preset particle parameter information.

[0109] S702. Calculate the expected consumed electric energy W based on the formula W = COP Y / Q CY .

[0110] S703. Calculate the expected heat dissipation Q HY at the hot end based on the formula Q CY = Q H .

[0111] S704. Calculate A CY / σ C × A C × λ C / σ C based on the formula Q C / σ C = QCY / ΔT CY ×λ C , where A C is the area of the cold-end substrate, and σ C is the thickness of the cold-end substrate;

[0112] S705. Based on the formula Q HY =ΔT HY ×A H ×λ H / σ H calculate A H / σ H =Q HY / ΔT HY ×λ H , where A H is the area of the preset hot-end substrate, and σ H is the thickness of the preset hot-end substrate.

[0113] S706. Fabricate a semiconductor refrigeration test piece according to A C , σ C , A H , σ H and the preset particle parameter information.

[0114] S707. Power on and test the semiconductor refrigeration test piece according to the preset working parameters to obtain the temperature T CSW of the outer surface of the actual cold-end substrate, the temperature T CSN of the inner surface of the actual cold-end substrate, the temperature T HSW of the outer surface of the actual hot-end substrate, and the temperature T HSN of the inner surface of the actual hot-end substrate.

[0115] S708. Obtain the target working parameters and the actual working temperature of the semiconductor refrigeration test piece. Among them, the target working parameters include the target energy efficiency ratio and the target refrigerating capacity. The actual working temperature includes the temperature T CSW of the outer surface of the actual cold-end substrate, the temperature T CSN of the inner surface of the actual cold-end substrate, the temperature T HSW of the outer surface of the actual hot-end substrate, and the temperature T HSN of the inner surface of the actual hot-end substrate.

[0116] S709. Determine the actual working parameters of the cold part of the semiconductor test piece according to the actual working temperature;

[0117] S710. Optimize the size of the substrate according to the actual working parameters and the target working parameters to obtain the optimized substrate size parameters;

[0118] S711. Adjust the semiconductor refrigeration component according to the optimized substrate size parameters to obtain an optimized semiconductor refrigeration test piece.

[0119] In this embodiment, based on the target working parameters of the semiconductor refrigeration component, design and fabricate a semiconductor refrigeration test piece. After powering on and testing the semiconductor refrigeration test piece, obtain the actual working temperature of the semiconductor refrigeration test piece. Furthermore, it is convenient to optimize the size of the substrate according to the actual working parameters and the target working parameters, so that the actual working parameters meet the target refrigeration parameters, reduce the problem of material waste, and meet the refrigeration requirements of the semiconductor refrigeration component.

[0120] In some embodiments, a semiconductor refrigeration component is provided, which is designed and fabricated by using the optimization method for the semiconductor refrigeration component described in any one of the above embodiments.

[0121] The semiconductor refrigeration component provided by the embodiments of the present disclosure adjusts the size parameters of the substrate during the design and fabrication process to adjust the actual working parameters of the semiconductor refrigeration component. Ensure that the heat dissipation capabilities of both the hot end and the cold end meet the requirements, and the actual working parameters meet the target refrigeration parameters, reduce the problem of material waste, and meet the refrigeration requirements of the semiconductor refrigeration component.

[0122] The above description and the accompanying drawings fully illustrate the embodiments of the present disclosure, enabling those skilled in the art to practice them. Other embodiments may include structural, logical, electrical, process, and other changes. The embodiments only represent possible variations. Unless explicitly required, individual components and functions are optional, and the order of operations may vary. Parts and features of some embodiments may be included in or replace parts and features of other embodiments. Moreover, the terms used in this application are only for describing the embodiments and do not limit the claims. As used in the description of the embodiments and the claims, unless the context clearly indicates otherwise, the singular forms "a", "an", and "the" are intended to also include the plural forms. Similarly, as used in this application, the term "and / or" refers to any and all possible combinations including one or more of the associated listed items. Additionally, when used in this application, the term "comprise" and its variants "comprises" and / or "comprising" etc. mean the presence of the stated features, wholes, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, wholes, steps, operations, elements, components, and / or groups of these. Without further limitation, an element defined by the statement "comprising one..." does not exclude the presence of another identical element in the process, method, or device comprising the element. Herein, each embodiment may focus on the differences from other embodiments, and the same or similar parts among the embodiments may be referred to each other. For the methods, products, etc. disclosed in the embodiments, if they correspond to the method part disclosed in the embodiments, the relevant parts may refer to the description of the method part.

[0123] Those skilled in the art will realize that the units and algorithm steps of each example described in connection with the embodiments disclosed herein can be implemented in electronic hardware, or in a combination of computer software and electronic hardware. Whether these functions are executed in hardware or software may depend on the specific application and design constraints of the technical solution. The skilled person may use different methods for each specific application to achieve the described functions, but such implementation should not be considered to exceed the scope of the embodiments of the present disclosure. The skilled person can clearly understand that for the sake of convenience and brevity of description, the specific working processes of the systems, devices, and units described above can refer to the corresponding processes in the foregoing method embodiments, and will not be repeated here.

[0124] In the embodiments disclosed herein, the disclosed methods, products (including but not limited to devices, equipment, etc.) can be implemented in other ways. For example, the device embodiments described above are merely illustrative. For example, the division of the units can be merely a logical function division. In actual implementation, there can be other division methods. For example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Additionally, the shown or discussed couplings or direct couplings or communication connections to each other can be through some interfaces. The indirect couplings or communication connections of devices or units can be in electrical, mechanical, or other forms. The units described as separate components may or may not be physically separated. The components shown as units may or may not be physical units, that is, they can be located in one place or distributed to multiple network units. Some or all of the units can be selected according to actual needs to implement this embodiment. Additionally, in the embodiments of the present disclosure, the various functional units can be integrated in one processing unit, or each unit can exist physically alone, or two or more units can be integrated in one unit.

[0125] The flowcharts and block diagrams in the accompanying drawings illustrate the possible architectures, functions, and operations of systems, methods, and computer program products according to embodiments of the present disclosure. In this regard, each block in the flowchart or block diagram can represent a module, a program segment, or a part of code that contains one or more executable instructions for implementing the specified logical function. In some alternative implementations, the functions marked in the blocks can occur in a different order than that marked in the accompanying drawings. For example, two consecutive blocks can actually be executed substantially in parallel, and they can sometimes be executed in the reverse order, depending on the functions involved. In the descriptions corresponding to the flowcharts and block diagrams in the accompanying drawings, the operations or steps corresponding to different blocks can also occur in a different order than that disclosed in the description. Sometimes, there is no specific order between different operations or steps. For example, two consecutive operations or steps can actually be executed substantially in parallel, and they can sometimes be executed in the reverse order, depending on the functions involved. Each block in the block diagram and / or flowchart, as well as the combination of blocks in the block diagram and / or flowchart, can be implemented by a dedicated hardware-based system for performing the specified functions or actions, or can be implemented by a combination of dedicated hardware and computer instructions.

Claims

1. An optimization method for a semiconductor refrigeration component, characterized in that, The semiconductor refrigeration component includes a substrate, and the optimization method includes: Obtain the target operating parameters and the actual operating temperature of the semiconductor refrigeration component; Determine the actual operating parameters of the semiconductor refrigeration component according to the actual operating temperature; Optimize the size of the substrate according to the actual operating parameters and the target operating parameters to obtain the optimized substrate size parameters; Adjust the semiconductor refrigeration component according to the optimized substrate size parameters to obtain the optimized semiconductor refrigeration component.

2. The optimization method for a semiconductor refrigeration component according to claim 1, wherein The actual operating parameters include the actual refrigerating capacity, the actual heating capacity and the actual energy efficiency ratio. Determining the actual operating parameters of the semiconductor refrigeration component according to the actual operating temperature includes: Calculate the actual refrigerating capacity and the actual heating capacity of the semiconductor refrigeration component according to the actual operating temperature; Calculate the actual energy efficiency ratio of the semiconductor refrigeration component according to the actual refrigerating capacity and the actual heating capacity.

3. The optimization method for a semiconductor refrigeration device according to claim 2, wherein The substrate includes a cold-end substrate and a hot-end substrate. The actual operating temperature includes the temperature T of the outer surface of the actual cold-end substrate CSW , the temperature T of the inner surface of the actual cold-end substrate CSN , the temperature T of the outer surface of the actual hot-end substrate HSW and the temperature T of the inner surface of the actual hot-end substrate HSN . According to the actual operating temperature, calculate the actual refrigerating capacity and actual heating capacity of the semiconductor refrigeration device, including: Calculate T CSW and T CSN the difference ΔT CS ; Calculate T HSW With T HSN The difference ΔT HS ; Based on Q CS = ΔT CS × A C × λ C / σ C , calculate the actual refrigerating capacity Q CS ; where A C is the area of the cold-end substrate, λ C is the thermal conductivity of the cold-end substrate, σ C is the thickness of the cold-end substrate; Based on Q HS = ΔT HS × A H × λ H / σ H , calculate the actual heating capacity Q HS ; where A H is the area of the hot-end substrate, λ H is the thermal conductivity of the hot-end substrate, and σ H is the thickness of the hot-end substrate.

4. The optimization method for a semiconductor refrigeration component according to claim 2, characterized in that Calculating the actual energy efficiency ratio of the semiconductor refrigeration component according to the actual refrigerating capacity and the actual heating capacity includes: Based on COP S = Q CS / (Q HS - Q CS ), calculate the actual energy efficiency ratio COP S .

5. The optimization method for a semiconductor refrigeration component according to any one of claims 1 to 4, characterized in that, The actual working parameters include the actual refrigerating capacity Q CS and the actual coefficient of performance COP S , the target working parameters include the target refrigerating capacity Q CY and the target coefficient of performance of refrigeration COP Y , according to the actual working parameters and the target working parameters, optimize the size of the substrate to obtain the optimized substrate size parameters, including: At Q CS less than K1 × Q CY the size of the substrate is optimized based on the actual working parameters and the target working parameters to obtain the optimized first substrate size parameter; where K1 is the first coefficient; At Q CS Greater than or equal to K2 × Q CY , and COP S Less than COP Y In the case of, based on the actual working parameters and the target working parameters, optimize the size of the substrate to obtain the optimized second substrate size parameter; where K2 is the second coefficient.

6. The optimization method for a semiconductor refrigeration component according to claim 5, characterized in that, The target operating parameters include the target operating temperature, the outer surface temperature T of the target hot-end substrate HYW and the outer surface temperature T of the target cold-end substrate CYW , the optimized first substrate size parameters include the optimized first substrate thickness parameter and the optimized first substrate area parameter. Based on the actual operating parameters and the target operating parameters, the size of the substrate is optimized to obtain the optimized first substrate size parameters, including: Calculate Δσ1 = σ×ΔT / (T HYW -T CYW ); where σ is the thickness of the substrate, ΔT is the difference between the actual working temperature and the target working temperature of the substrate, and Δσ1 is the first thickness optimization parameter; Calculate σ - Δσ1 as the optimized first substrate thickness parameter; When the thickness of the updated substrate is less than the thickness threshold, the thickness of the cold-end substrate is not adjusted, and ΔA1 = A×ΔT / (T HYW -T CYW ) is calculated; where A is the area of the substrate and ΔA1 is the first area optimization parameter. Calculate A + ΔA1 as the optimized first substrate area parameter.

7. The optimization method for a semiconductor refrigeration component according to claim 6, wherein The substrate thickness σ includes the hot-end substrate thickness σ H and the cold-end substrate thickness σ C The substrate area A includes the hot-end substrate area A H and the cold-end substrate area A C Before optimizing the dimensions of the substrate to obtain the optimized first substrate dimension parameters, it further includes: Calculate the absolute value of the difference between the actual operating temperature of the cold end and the target operating temperature of the cold end as the first difference ΔT1; Calculate the absolute value of the difference between the actual operating temperature of the hot end and the target operating temperature of the hot end as the second difference ΔT2; Among them, when ΔT1 > ΔT2, σ = σ C , A = A C , Δσ1 = Δσ C1 , ΔA1 = ΔA C1 , ΔT = ΔT1; when ΔT2 > ΔT1, σ = σ H , A = A H , Δσ1 = Δσ H1 , ΔA1 = ΔA H1 , ΔT = ΔT2.

8. The optimization method for a semiconductor refrigeration component according to claim 5, characterized in that The actual working parameters include the actual coefficient of performance (COP). S , and the target working parameters include the target coefficient of performance (COP). Y , based on the actual working parameters and the target working parameters, the size of the substrate is optimized to obtain the optimized second substrate size parameters, including: Calculate Δσ2 = σ × (COP S / COP Y ); where σ is the thickness of the substrate, and Δσ2 is the second thickness optimization parameter; Calculate σ - Δσ2 as the optimized second substrate thickness parameter; When the thickness of the updated substrate is less than the thickness threshold, the thickness of the cold-end substrate is not adjusted, and ΔA2 = A × (COP S / COP Y ) is calculated; where A is the area of the substrate and ΔA2 is the second area optimization parameter; Calculate A + ΔA as the optimized second substrate area parameter.

9. The optimization method for a semiconductor refrigeration component according to any one of claims 1 to 4, characterized in that, The optimized substrate size parameters include the optimized area parameter and the optimized thickness parameter. Adjusting the semiconductor refrigeration component according to the optimized substrate size parameters to obtain the optimized semiconductor refrigeration component includes: Adjust the thickness of the substrate according to the optimized thickness parameter; Adjust the area of the substrate by adjusting the diagonal of the cold-end substrate according to the optimized area parameter to obtain the optimized semiconductor refrigeration component.

10. A semiconductor refrigeration component, characterized in that, Design and manufacture by using the optimization method for the semiconductor refrigeration component described in any one of claims 1 to 9.

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