Substrate material with eave-shaped structure as well as preparation process and application of substrate material

Abstract

The invention provides a substrate material with an eave-shaped structure as well as a preparation process and application of the substrate material. The preparation process comprises the following steps: (1) coating, exposing and developing a substrate provided with a barrier layer and a flexible substrate layer, and obtaining a photoresist layer on one side, far away from the flexible substrate layer, of the barrier layer; (2) after etching the barrier layer and the flexible substrate layer, depositing an ITO layer on the photoresist layer and the exposed surface of the flexible substrate layer; and (3) transversely etching the flexible substrate layer by using a dry etching method, and removing the ITO layer and the photoresist layer to obtain the substrate material with the eave-shaped structure. Through the design of the preparation process of the substrate material with the eave-shaped structure, the substrate material with the eave-shaped structure and high yield is obtained, the preparation process is simple, the substrate material can be prepared by adopting existing equipment, the cost is low, and the substrate material is suitable for industrial production and preparation.

Description

Technical Field

[0001] The present invention belongs to the technical field of display screens, and particularly relates to a substrate material with an eave-shaped structure, a preparation process thereof, and an application thereof. Background Art

[0002] With the expansion of the application fields of display products, companies related to the production or use of display screens have begun to design and produce special-shaped screen display products. For example, the iPhone X mobile phone has a notch design. However, in a special-shaped screen panel such as a notch, the width of the lower border has not decreased, and the setting of the notch position makes some users feel that the actual effective area or screen-to-body ratio of the panel has not increased, which has affected the sales volume of terminal products to a certain extent.

[0003] According to market demand, the requirement for the screen-to-body ratio of smartphones is getting higher and higher. Mobile phone manufacturers have designed more and more front cameras, and various irregular screen designs such as notch screens, pill screens, blind hole screens, and beauty tips have emerged on the market. CN108549501A discloses a touch screen and its mobile terminal that realizes the appearance of a notch screen. The touch screen includes an FPC and a photo-audio component integrated at the upper end of the FPC. Sensor wiring is carried out in the middle layer of the FPC, on both sides of the photo-audio component, and in the area within the viewing window of the touch screen. Circuit lines of the sensor signal lines of the touch screen are arranged in this area. By wiring separately from the viewing windows on both sides of the photo-audio component, the tri-band antenna area is avoided to achieve the appearance of a notch screen, and the problem of signal line accumulation and mutual influence caused by single-sided wiring can also be alleviated, reducing the impact on the width requirement of the Sensor wiring. Thus, the problem that the sensor wire-out method of the existing touch screen cannot meet the appearance requirements of the notch screen is solved. CN112117234A discloses a blind hole screen backplane structure and manufacturing method. A first metal layer is fabricated on a substrate; a first insulating layer is fabricated, and the first insulating layer is divided into a blind hole area and a non-blind hole area. A blind hole metal layer is fabricated on the blind hole area; a first through hole is fabricated, three second metal layers are fabricated, a third insulating layer is fabricated, a planarization layer is fabricated, and the planarization layer is etched to form a second through hole. A third metal layer is fabricated on the non-blind hole area of the planarization layer; a fifth insulating layer is fabricated, and the third through hole, the fourth through hole, the fifth through hole, the sixth through hole, and the seventh through hole are etched; a pixel electrode layer is fabricated; and part of the pixel electrode layer is etched. The above technical solution forms a conductive ring by fabricating the pixel electrode layer and the second metal layer. The conductive ring is arranged around the blind hole area, and through the control and adjustment of external wiring, the decomposed electrons / ions are attracted to the pixel electrode layer on the sidewall of the blind hole boundary for neutralization, reducing the movement of free electrons / ions to the display area, thereby ensuring the display quality. CN210297772U discloses a new type of beauty tip structure touch-integrated irregular module, which relates to the field of mobile phone screens. It includes a screen body, and a metal shell is sleeved outside the screen body. An irregular hole is opened in the middle of one end of the screen body. The screen body includes a glass cover plate, an LCD display screen, a light guide plate, a backlight plate, and an LED lamp group. The glass cover plate, the LED display screen, the light guide plate, and the backlight plate are sequentially adhered. The LED lamp group is located at one end of the backlight plate. The LED lamp group includes a mounting plate, side plates are fixedly connected to both sides of the upper surface of the mounting plate, an elastic convex block is adhesively connected to the middle of the upper surface of the mounting plate, a lamp bead is adhesively connected to the upper surface of the elastic convex block, and a scattering lamp cover is arranged above the lamp bead. In the utility model, by arranging a scattering lamp cover in the LED lamp group, the light guide efficiency of the lamp bead is improved. By arranging two L-shaped cover plates on the side plates, the L-shaped cover plates play a role in limiting the convex plate 20, making the installation of the scattering lamp cover stable.

[0004] Although the prior art provides different types of special-shaped screen display products, with the continuous improvement of customer demand, various types of special-shaped screen display products emerge in an endless stream, and the preparation process of substrate materials with different structures that can be used to prepare special-shaped screen products has also attracted widespread attention. For example, the iPhone 14 abandons the original notch screen design and adopts a new design of smart island, which shows that flexible through-hole screens will become the mainstream of mobile phone screen development in the future. Therefore, how to provide a preparation process for a substrate material with an eaves-like structure to obtain a substrate material with an eaves-like structure, and then prepare a special-shaped screen display product with a higher screen-to-body ratio, has become a technical problem that needs to be solved urgently. Summary of the invention

[0005] In view of the deficiencies of the prior art, the object of the present invention is to provide a base material with an eaves-like structure, a preparation process and application thereof. The present invention designs a preparation process for the base material with an eaves-like structure, further etches the flexible substrate layer longitudinally, uses the ITO layer as a protective layer, and then etches the flexible substrate layer transversely, thereby obtaining the base material with an eaves-like structure. The preparation process is simple, can be prepared using existing equipment, has low cost, and is suitable for industrial production.

[0006] To achieve this object, the present invention adopts the following technical solutions:

[0007] In a first aspect, the present invention provides a process for preparing a base material having an eaves-like structure, the preparation process comprising the following steps:

[0008] (1) coating a substrate provided with a barrier layer and a flexible substrate layer, exposing and developing the substrate, and obtaining a photoresist layer on a side of the barrier layer away from the flexible substrate layer;

[0009] (2) after etching the barrier layer and the flexible substrate layer, an ITO layer is provided on the surface of the photoresist layer and the exposed flexible substrate layer;

[0010] (3) After the flexible substrate layer is laterally etched, the ITO layer and the photoresist layer are removed to obtain the base material with the eaves-like structure.

[0011] In the present invention, a flexible substrate layer and a barrier layer are sequentially arranged on one side of the substrate in step (1). In the present invention, a photoresist material is coated on the side of the barrier layer away from the flexible substrate layer, and through exposure and development, a photoresist layer is obtained on the side of the barrier layer away from the flexible substrate layer. After etching the barrier layer and the flexible substrate layer, part of the PI layer is exposed, and then an ITO layer is provided on the surfaces of the barrier layer and the exposed flexible substrate layer as a protective layer. Since the etching rate of the ITO layer in the etching process in step (3) is almost zero, and since both the photoresist layer and the exposed flexible substrate layer are protected by the ITO layer, in the longitudinal direction, the flexible substrate layer cannot be etched, and only has the ability of lateral etching, so that the lateral flexible substrate layer is etched, and thus a substrate material with an eaves-like structure is obtained.

[0012] The following are the preferred technical solutions of the present invention, but do not limit the technical solutions provided by the present invention. Through the following preferred technical solutions, the purpose and beneficial effects of the present invention can be better achieved and realized.

[0013] As a preferred technical solution of the present invention, the thickness of the barrier layer is 0.3 μm to 1.0 μm, and for example, it can be 0.3 μm, 0.4 μm, 0.5 μm, 0.6 μm, 0.7 μm, 0.8 μm, 0.9 μm or 1 μm, etc.

[0014] Preferably, the flexible substrate layer is a PI layer.

[0015] Preferably, the thickness of the flexible substrate layer is 5 μm to 20 μm, and for example, it can be 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, 10 μm, 11 μm, 12 μm, 13 μm, 14 μm, 15 μm, 16 μm, 17 μm, 18 μm, 19 μm or 20 μm, etc.

[0016] As a preferred technical solution of the present invention, the thickness of the photoresist layer is 3 to 4 μm, and for example, it can be 3 μm, 3.1 μm, 3.2 μm, 3.3 μm, 3.4 μm, 3.5 μm, 3.6 μm, 3.7 μm, 3.8 μm, 3.9 μm or 4 μm, etc.

[0017] In the present invention, by setting the thickness of the photoresist layer within a specific range, it can be prepared by using existing photoresist coating equipment without modification, which reduces the production cost, and can also protect the barrier layer covered by the photoresist layer from being etched in the etching described in step (2). If the thickness of the photoresist layer is too small, in the etching process of step (2), it cannot be ensured that the barrier layer covered by the photoresist layer will not be etched, resulting in a low yield of the final product; if the thickness of the photoresist layer is too large, it cannot be prepared by existing photoresist coating equipment and requires special photoresist coating equipment to prepare, leading to an increase in its production cost.

[0018] As a preferred technical solution of the present invention, the etching in step (2) includes etching the barrier layer and the flexible substrate layer respectively.

[0019] Preferably, the method for etching the barrier layer includes dry etching.

[0020] Preferably, the method for etching the flexible substrate layer includes vertical dry etching.

[0021] It should be noted that there are no special restrictions on the dry etching method for the barrier layer and the vertical dry etching method for the flexible substrate layer in the present invention, and common etching methods in the art are applicable. For dry etching of the barrier layer, the dry etching equipment is a plasma etching equipment in the form of conventional RIE or ICP, etc. The main components of the reaction gas are CF4 and O2, and some can add C2HF5, H2, etc. but are not limited to this, and the purpose of vertical etching is achieved by adjusting the Source power and Bias power: for vertical dry etching of the flexible substrate layer, the dry etching equipment is a plasma etching equipment in the form of conventional RIE or ICP, etc. The main component of the reaction gas is O2, and some can add CF4, H2, etc. but are not limited to this. And the purpose of vertical etching is achieved by adjusting the Source power and Bias power.

[0022] Preferably, the total etching depth of the barrier layer and the flexible substrate layer is 1.5 - 2.5 μm, for example, it can be 1.5 μm, 1.6 μm, 1.7 μm, 1.8 μm, 1.9 μm, 2.0 μm, 2.1 μm, 2.2 μm, 2.3 μm, 2.4 μm or 2.5 μm, etc.

[0023] In the present invention, by controlling the total etching depth within a specific range, the subsequent eaves-shaped structure can be controlled, and a substrate material with excellent performance can be prepared.

[0024] As a preferred technical solution of the present invention, the thickness of the ITO layer is 25 - 40 nm, for example, it can be 25 nm, 26 nm, 27 nm, 28 nm, 29 nm, 30 nm, 31 nm, 32 nm, 33 nm, 34 nm, 35 nm, 36 nm, 37 nm, 37 nm, 39 nm or 40 nm.

[0025] Preferably, the method for setting the ITO layer includes PVD deposition (physical vapor deposition).

[0026] As a preferred technical solution of the present invention, the width of the lateral etching in step (3) is 0.3 - 0.5 μm, for example, it can be 0.3 μm, 0.32 μm, 0.34 μm, 0.36 μm, 0.38 μm, 0.4 μm, 0.42 μm, 0.44 μm, 0.46 μm, 0.48 μm or 0.5 μm, etc.

[0027] It should be noted that the lateral etching in the present invention refers to etching the flexible substrate layers on both sides of the longitudinally etched flexible substrate layer based on the longitudinal etching of the flexible substrate layer in step (2). In the present invention, the width of the lateral etching refers to the width of etching the flexible substrate layer on either side of the longitudinally etched flexible substrate layer.

[0028] In the present invention, there is no special limitation on the method of lateral etching, and common preparation methods in the art are applicable. Conventional dry etching equipment is a plasma etching equipment in the form of conventional PE, RIE or ICP, etc. The main component of the reaction gas is O2, and CF4, C2HF5, H2, etc. can be added in part but are not limited to this, and the purpose of lateral etching is achieved by adjusting the Source power.

[0029] As a preferred technical solution of the present invention, the preparation process of the substrate material with an eave-like structure specifically includes the following steps:

[0030] (1) Coating, exposing and developing the substrate provided with the barrier layer and the flexible substrate layer to obtain a photoresist layer with a thickness of 3 - 4 μm on the side of the barrier layer away from the flexible substrate layer;

[0031] (2) Dry etching the barrier layer respectively, and after longitudinally dry etching the flexible substrate layer, through the PVD deposition process, an ITO layer with a thickness of 25 - 40 nm is provided on the surfaces of the photoresist layer and the exposed flexible substrate layer;

[0032] Among them, the total etching depth of the barrier layer and the flexible substrate layer is 1.5 - 2.5 μm;

[0033] (3) After laterally etching the flexible substrate layer, removing the ITO layer and the photoresist layer to obtain the substrate material with an eave-like structure;

[0034] Among them, the width of the lateral etching is 0.3 - 0.5 μm, which is the key dimension of the eave-like structure.

[0035] In the second aspect, the present invention provides a substrate material with an eave-like structure prepared by the preparation process as described in the first aspect.

[0036] In the third aspect, the present invention provides an application of the substrate material with an eave-like structure as described in the second aspect in the preparation of a display screen.

[0037] Compared with the prior art, the present invention has the following beneficial effects:

[0038] By designing the preparation process of the substrate material with an eave-like structure, the present invention further longitudinally etches the flexible substrate layer first, uses the ITO layer as a protective layer, and then transversely etches the flexible substrate layer to obtain a substrate material with an eave-like structure. Its preparation process is simple, can be prepared with existing equipment, has a low cost, and is suitable for industrial production and preparation. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Figure 1 is a process flow chart of the preparation of the substrate material with an eave-like structure provided in Embodiment 1 of the present invention;

[0040] Figure 2 is a process flow chart of the preparation of the substrate material with an eave-like structure provided in Embodiment 5 of the present invention;

[0041] Figure 3 is a process flow chart of the preparation of the substrate material with an eave-like structure provided in Comparative Example 1 of the present invention;

[0042] Figure 4 is a process flow chart of the preparation of the substrate material with an eave-like structure provided in Comparative Example 2 of the present invention;

[0043] Among them, 1 - glass substrate, 2 - PI layer, 3 - barrier layer, 4 - photoresist layer, 5 - ITO layer, 6 - IZO layer. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0044] The technical solution of the present invention will be further described below in conjunction with the drawings and through specific embodiments. Those skilled in the art should understand that the embodiments are only for helping to understand the present invention and should not be regarded as specific limitations on the present invention.

[0045] The same photoresist material is used in the following embodiments and comparative examples.

[0046] The preparation method of the substrate provided with a barrier layer and a flexible substrate layer used in the following embodiments and comparative examples is as follows:

[0047] The glass substrate or the glass substrate already with one layer of PI and a protective layer is first cleaned and then transferred to a PI coater to coat PI on the glass substrate (the thickness of the PI is adjusted by adjusting parameters such as the coating amount, slit distance, and moving speed. The thickness of the PI is controlled at 15 μm). After removing the solvent of the PI solution by HVCD (High vacuum Dry), it is then baked at a high temperature to cure the PI (the high-temperature baking process includes heating from 25 °C to 100 °C within 25 min, holding for 10 min, then continuing to heat to 150 °C within 15 min, holding for 20 min, continuing to heat to 250 °C within 20 min, holding for 30 min, continuing to heat to 450 °C within 75 min, holding for 30 min, and cooling to 25 °C within 140 min to complete the high-temperature baking). Then it is transferred to a PECVD device to deposit a 1-μm composite structure (the film thickness ratio of silicon oxide to silicon nitride is 0.9:0.1) of silicon oxide and silicon nitride as a barrier layer.

[0048] Among them, the thickness of the barrier layer is 1 μm, and the thickness of the PI layer is 15 μm.

[0049] The PI material can be U-varnish-S of UBE, SPM-YP1000 of Jucui, or other models used to replace these two PIs, but it is not limited to only these for the following processes.

[0050] Example 1

[0051] This example provides a substrate material with an eave-like structure and its preparation process. The preparation process includes the following steps, and its preparation flow chart is as Figure 1 shown:

[0052] (1) Coating a photoresist material on the substrate provided with a barrier layer and a PI layer, exposing and developing, to obtain a photoresist layer with a thickness of 3.5 μm on the side of the barrier layer away from the PI layer;

[0053] (2) Dry-etching the barrier layer respectively, and after longitudinally dry-etching the PI layer, through a PVD deposition process, an ITO layer with a thickness of 30 nm is set on the surfaces of the photoresist layer and the exposed PI layer;

[0054] Among them, the total etching depth of the barrier layer and the PI layer is 2 μm;

[0055] (3) After laterally etching the PI layer, removing the ITO layer and the photoresist layer to obtain the substrate material with an eave-like structure;

[0056] Among them, the width of the lateral etching is 0.4 μm.

[0057] Example 2

[0058] This embodiment provides a substrate material with an eave-like structure and a preparation process thereof. The preparation process includes the following steps:

[0059] (1) Coating, exposing, and developing a substrate provided with a barrier layer and a PI layer to obtain a photoresist layer with a thickness of 3 μm on the side of the barrier layer away from the PI layer;

[0060] (2) Dry-etching the barrier layer and performing vertical dry-etching on the PI layer respectively. After the PVD deposition process, an ITO layer with a thickness of 40 nm is provided on the surfaces of the photoresist layer and the exposed PI layer;

[0061] Among them, the total etching depth of the barrier layer and the flexible substrate layer is 1.5 μm;

[0062] (3) After performing horizontal etching on the PI layer, removing the ITO layer and the photoresist layer to obtain the substrate material with an eave-like structure;

[0063] Among them, the width of the horizontal etching is 0.5 μm.

[0064] Example 3

[0065] This embodiment provides a substrate material with an eave-like structure and a preparation process thereof. The preparation process includes the following steps:

[0066] (1) Coating, exposing, and developing a substrate provided with a barrier layer and a PI layer to obtain a photoresist layer with a thickness of 4 μm on the side of the barrier layer away from the PI layer;

[0067] (2) Dry-etching the barrier layer and performing vertical dry-etching on the PI layer respectively. After the PVD deposition process, an ITO layer with a thickness of 25 nm is provided on the surfaces of the photoresist layer and the exposed PI layer;

[0068] Among them, the total etching depth of the barrier layer and the PI layer is 2.5 μm;

[0069] (3) After performing horizontal etching on the PI layer, removing the ITO layer and the photoresist layer to obtain the substrate material with an eave-like structure;

[0070] Among them, the width of the horizontal etching is 0.3 μm.

[0071] Example 4

[0072] This embodiment provides a substrate material with an eave-like structure and a preparation process thereof. The preparation process includes the following steps:

[0073] (1) Coating, exposing, and developing a substrate provided with a barrier layer and a PI layer to obtain a photoresist layer with a thickness of 3 μm on the side of the barrier layer away from the flexible substrate layer;

[0074] (2) Dry-etch the barrier layer respectively. After longitudinally dry-etching the flexible substrate layer, through the PVD deposition process, an ITO layer with a thickness of 30 nm is set on the surface of the photoresist layer and the exposed flexible substrate layer;

[0075] Among them, the total etching depth of the barrier layer and the flexible substrate layer is 2 μm;

[0076] (3) After laterally etching the flexible substrate layer, remove the ITO layer and the photoresist layer to obtain the substrate material with an eave-shaped structure;

[0077] Among them, the width of the lateral etching is 0.4 μm.

[0078] Example 5

[0079] This example provides a substrate material with an eave-shaped structure and its preparation process. The preparation process includes the following steps, and the schematic diagram of its preparation process is as Figure 2 shown:

[0080] The difference from Example 1 is only that the thickness of the photoresist layer is 2 μm, and other conditions are the same as those in Example 1.

[0081] From the content of Examples 1-4, it can be seen that the present invention designs the preparation process of the substrate material with an eave-shaped structure. Further, by first longitudinally etching the flexible substrate layer, using the ITO layer as a protective layer, then laterally etching the flexible substrate layer, and controlling the thickness of each layer within a specific range, a substrate material with an eave-shaped structure is obtained. Its preparation process is simple, can be prepared using existing equipment, has a low cost, and is suitable for industrial production and preparation.

[0082] Since the photoresist layer will also be etched during the dry-etching of the barrier layer and the longitudinal dry-etching of the PI layer, if the thickness of the photoresist layer is too small (Example 5), during the dry-etching of the barrier layer and the longitudinal dry-etching of the PI layer, the photoresist layer is etched, making the barrier layer exposed and unable to protect the barrier layer, resulting in a low yield of the finally prepared product.

[0083] Comparative Example 1

[0084] This comparative example provides a substrate material with an eave-shaped structure and its preparation process. The preparation process includes the following steps, and the schematic diagram of its preparation process is as Figure 3 shown:

[0085] (1) Coating a photoresist material on the substrate provided with a barrier layer and a PI layer, exposing and developing to obtain a photoresist layer with a thickness of 7 μm on the side of the barrier layer away from the PI layer;

[0086] (2) Dry-etch the barrier layer, and perform vertical and horizontal dry-etching on the PI layer to obtain the substrate material with an eave-shaped structure;

[0087] Among them, the total depth of the vertical etching of the barrier layer and the PI layer is 2 μm, and the width of the horizontal etching is 0.4 μm.

[0088] Although the preparation process of the substrate material with an eave-shaped structure provided in Comparative Example 1 is simple, the thickness of the photoresist layer to be coated is too high, and existing equipment cannot complete it (the thickness of the photoresist layer coated by existing equipment ≤ 4 μm), resulting in the inability to mass-produce the substrate material with an eave-shaped structure. Moreover, due to the large thickness of the photoresist layer, the required exposure and development time is long, affecting production efficiency. At the same time, the etching of the barrier layer and the PI layer is unstable, and the yield of the substrate material with an eave-shaped structure obtained is low.

[0089] Comparative Example 2

[0090] This comparative example provides a substrate material with an eave-shaped structure and its preparation process. The preparation process includes the following steps, and the schematic diagram of the preparation process is as Figure 4 shown:

[0091] (1) Perform PVD deposition on the substrate provided with a barrier layer and a PI layer to obtain an IZO layer;

[0092] (2) Coat a photoresist material on the side of the IZO layer away from the barrier layer, expose and develop to obtain a photoresist layer with a thickness of 2.1 μm on the side of the barrier layer away from the PI layer;

[0093] (3) Perform wet etching on the exposed IZO layer;

[0094] (4) Dry-etch the barrier layer respectively, and perform vertical and horizontal dry-etching on the PI layer;

[0095] Among them, the total depth of the vertical etching of the barrier layer and the PI layer is 2 μm, and the width of the horizontal etching is 0.4 μm

[0096] (5) Remove the photoresist layer and the IZO layer to obtain the substrate material with an eave-shaped structure.

[0097] The preparation process of the substrate material with an eave-shaped structure provided in Comparative Example 2 is long, and an IZO layer needs to be provided, increasing the production cost of the substrate material with an eave-shaped structure.

[0098] As can be seen from the above, the present invention designs the preparation process of the substrate material with an eave-shaped structure. Further, by first longitudinally etching the flexible substrate layer with the ITO layer as the protective layer and then transversely etching the flexible substrate layer, a substrate material with an eave-shaped structure is obtained. Its preparation process is simple, can be prepared with existing equipment, has a low cost, and is suitable for industrial production and preparation.

[0099] The applicant declares that the present invention uses the above embodiments to illustrate the detailed process flow of the present invention. However, the present invention is not limited to the above detailed process flow, that is, it does not mean that the present invention must rely on the above detailed process flow to be implemented. Those skilled in the art should understand that any improvement to the present invention, the equivalent replacement of each raw material of the product of the present invention, the addition of auxiliary components, the selection of specific methods, etc. all fall within the protection scope and the disclosure scope of the present invention.

Claims

1. A preparation process of a base material with an eave-like structure, characterized in that, The preparation process includes the following steps: (1) Coating a substrate provided with a barrier layer and a flexible substrate layer, followed by exposure and development, to obtain a photoresist layer on the side of the barrier layer away from the flexible substrate layer; (2) After etching the barrier layer and the flexible substrate layer, an ITO layer is provided on the surfaces of the photoresist layer and the exposed flexible substrate layer; (3) After performing lateral etching on the flexible substrate layer, the ITO layer and the photoresist layer are removed to obtain the substrate material with an eave-like structure.

2. The preparation process according to claim 1, characterized in that, The thickness of the barrier layer is 0.3 μm to 1.0 μm.

3. The preparation process according to claim 1 or 2, characterized in that, The flexible substrate layer is a PI layer; Preferably, the thickness of the flexible substrate layer is 5 μm to 20 μm.

4. The preparation process according to any one of claims 1-3, characterized in that, The thickness of the photoresist layer is 3 to 4 μm.

5. The preparation process according to any one of claims 1-4, characterized in that, The etching in step (2) includes etching the barrier layer and the flexible substrate layer separately; Preferably, the method for etching the barrier layer includes dry etching; Preferably, the method for etching the flexible substrate layer includes vertical dry etching; Preferably, the total etching depth of the barrier layer and the flexible substrate layer is 1.5 to 2.5 μm.

6. The preparation process according to any one of claims 1-5, characterized in that, The thickness of the ITO layer is 25 to 40 nm; Preferably, the method for providing the ITO layer includes PVD deposition.

7. The preparation process according to any one of claims 1-6, characterized in that, The width of the lateral etching in step (3) is 0.3 to 0.5 μm.

8. The preparation process according to any one of claims 1-7, characterized in that, The preparation process specifically includes the following steps: (1) Coating a substrate provided with a barrier layer and a flexible substrate layer, followed by exposure and development, to obtain a photoresist layer with a thickness of 3 to 4 μm on the side of the barrier layer away from the flexible substrate layer; (2) Separately dry etching the barrier layer and vertically dry etching the flexible substrate layer, and then through PVD deposition process, an ITO layer with a thickness of 25 to 40 nm is provided on the surfaces of the photoresist layer and the exposed flexible substrate layer; wherein, the total etching depth of the barrier layer and the flexible substrate layer is 1.5 to 2.5 μm; (3) After performing lateral etching on the flexible substrate layer, the ITO layer and the photoresist layer are removed to obtain the substrate material with an eave-like structure; wherein, the key technology lies in controlling the width of the lateral etching to be 0.3 to 0.5 μm.

9. A substrate material with an eave-like structure prepared by the preparation process according to any one of claims 1 - 8.

10. An application of the substrate material with an eave-like structure according to claim 9 in the preparation of a display screen.

Images