Focal length detection method, device and equipment of photoetching device and storage medium

Abstract

The invention discloses a focal length detection method and device of a photoetching device, equipment and a storage medium, and belongs to the technical field of semiconductor manufacturing. The method comprises the following steps: acquiring a reference layout and an incident light source with an inclination angle; adopting the reference layout and an incident light source, and photoetching a material to be photoetched through a target photoetching device to be measured to obtain a plurality of first images with position offset; measuring a first offset corresponding to each first image; and determining a focal length detection result according to the first offset corresponding to each first image and a plurality of second offsets corresponding to the reference photoetching device. As the incident light source has the inclination angle, the first image obtained by photoetching of the incident light source has position offset, and the position offset of the first image is related to the focal length, whether the offset of the first image is normal or not can be judged based on the first offset and the second offset, the focal length is detected, the operation complexity of the focal length detection process is simplified, and the detection efficiency is improved. The detection efficiency is high.

Description

Technical Field

[0001] The embodiments of the present application relate to the field of semiconductor manufacturing technology, and particularly to a method, device, equipment and storage medium for detecting the focal length of a lithography apparatus. Background Art

[0002] In the process of manufacturing semiconductor devices, a lithography machine is required to perform a lithography process to map the patterns designed in the process of manufacturing semiconductor devices onto a silicon wafer. Since the focal length of the lithography machine will affect the accuracy of the patterns mapped onto the silicon wafer during the lithography process, it is necessary to monitor the focal length of the lithography machine. Summary of the Invention

[0003] The embodiments of the present application provide a method, device, equipment and storage medium for detecting the focal length of a lithography apparatus, which can be used to detect the focal length of a lithography apparatus. The technical solutions are as follows:

[0004] On the one hand, the embodiments of the present application provide a method for detecting the focal length of a lithography apparatus, the method comprising:

[0005] Obtain a reference layout and an incident light source, the incident light source being a single-sided light source and having an inclination angle, the inclination angle being used to generate a position offset during the lithography process;

[0006] Use the reference layout and the incident light source to perform lithography on the material to be lithographed through a target lithography apparatus to be measured, and obtain a plurality of first images with position offsets;

[0007] Measure the first offset amount corresponding to each first image, the first offset amount corresponding to any one of the first images indicating the offset amount of the any one of the first images relative to the previous layer image of the any one of the first images, and the previous layer image being the image generated before the any one of the first images during the process of lithographing to obtain the any one of the first images;

[0008] Determine the focal length detection result of the target lithography apparatus according to the first offset amounts corresponding to the respective first images and a plurality of second offset amounts corresponding to a reference lithography apparatus, the lithography quality of the reference lithography apparatus being not lower than that of the target lithography apparatus.

[0009] In a possible implementation manner, the step of using the reference layout and the incident light source to perform lithography on the material to be lithographed through a target lithography apparatus to be measured, and obtaining a plurality of first images with position offsets includes:

[0010] Irradiate the reference layout with the incident light source, and through the target lithography apparatus, irradiate the light passing through the reference layout onto the material to be lithographed according to a plurality of first defocus amounts, and perform lithography on the irradiated material to obtain a plurality of first images with position offsets.

[0011] In a possible implementation, before irradiating the light passing through the reference layout on the material to be lithographed by the target lithography apparatus at a plurality of first defocus amounts and performing lithography on the irradiated material, it further includes:

[0012] Select all or part of the second defocus amounts used in the lithography of the reference lithography apparatus, and use the selected second defocus amounts as the first defocus amounts.

[0013] In a possible implementation, the measuring the first offset amount corresponding to each first image includes:

[0014] For any one of the first images, determine the first image center of the any one of the first images and the second image center of the previous layer image of the any one of the first images;

[0015] Determine the center offset amount between the first image center and the second image center as the first offset amount corresponding to the any one of the first images.

[0016] In a possible implementation, before determining the focal length detection result of the target lithography apparatus according to the first offset amounts corresponding to the respective first images and the plurality of second offset amounts corresponding to the reference lithography apparatus, it further includes:

[0017] Use the reference layout and the incident light source to perform lithography on the material to be lithographed by the reference lithography apparatus to obtain a plurality of second images with position offsets;

[0018] Measure the second offset amount corresponding to each second image, and the second offset amount corresponding to any one of the second images indicates the offset amount of the any one of the second images relative to the previous layer image of the any one of the second images, and the previous layer image is the image generated before the any one of the second images during the process of lithographing to obtain the any one of the second images;

[0019] Use the measured plurality of second offset amounts as the plurality of second offset amounts corresponding to the reference lithography apparatus.

[0020] In a possible implementation, the reference lithography apparatus includes a simulation lithography apparatus;

[0021] Before determining the focal length detection result of the target lithography apparatus according to the first offset amounts corresponding to the respective first images and the plurality of second offset amounts corresponding to the reference lithography apparatus, it further includes:

[0022] Simulate the simulation result formed by lithographing using the reference layout and the incident light source according to the layout parameters of the reference layout and the light source parameters of the incident light source;

[0023] Determine a plurality of second offsets corresponding to the simulated lithography apparatus according to the simulation result.

[0024] In a possible implementation, the focal length detection result includes a focal length offset, and the focal length offset indicates the amount of focal length that needs to be supplemented before performing lithography using the target lithography apparatus;

[0025] The determining the focal length detection result of the target lithography apparatus according to the first offsets corresponding to the respective first images and the plurality of second offsets corresponding to the reference lithography apparatus includes:

[0026] Determine a first reference relationship between each second offset and a second defocus amount corresponding to each second offset, where the first reference relationship indicates the process quality of the reference lithography apparatus;

[0027] Determine a second reference relationship between each first offset and a first defocus amount corresponding to each first offset, where the second reference relationship indicates the process quality of the target lithography apparatus;

[0028] Determine the focal length offset of the target lithography apparatus according to the first reference relationship and the second reference relationship.

[0029] In a possible implementation, the first reference relationship includes a linear relationship.

[0030] In a possible implementation, the reference layout includes a grating structure layout.

[0031] On the other hand, a focal length detection apparatus for a lithography apparatus is provided, and the apparatus includes:

[0032] An acquisition module, configured to acquire a reference layout and an incident light source, where the incident light source is a single-sided light source and has an inclination angle, and the inclination angle is used to generate a position offset during the lithography process;

[0033] The acquisition module is further configured to use the reference layout and the incident light source to perform lithography on a material to be lithographed through a target lithography apparatus to be measured, and obtain a plurality of first images with position offsets;

[0034] A determination module, configured to measure a first offset corresponding to each first image, where the first offset corresponding to any one of the first images indicates the offset of the any one of the first images relative to the previous layer image of the any one of the first images, and the previous layer image is an image generated before the any one of the first images during the process of lithographing the any one of the first images;

[0035] The determining module is further configured to determine a focal length detection result of the target lithography apparatus according to the first offsets corresponding to the respective first images and a plurality of second offsets corresponding to the reference lithography apparatus, where the lithography quality of the reference lithography apparatus is not lower than that of the target lithography apparatus.

[0036] In a possible implementation manner, the obtaining module is configured to irradiate the reference layout with the incident light source, and through the target lithography apparatus according to a plurality of first defocus amounts, irradiate the light passing through the reference layout onto the material to be lithographed, perform lithography on the irradiated material, and obtain a plurality of first images with position offsets.

[0037] In a possible implementation manner, the obtaining module is further configured to select all or part of the second defocus amounts used in the lithography of the reference lithography apparatus, and use the selected second defocus amounts as the first defocus amounts.

[0038] In a possible implementation manner, for any one of the first images, the determining module is configured to determine a first image center of the any one of the first images and a second image center of the previous layer image of the any one of the first images; and determine a center offset between the first image center and the second image center as the first offset corresponding to the any one of the first images.

[0039] In a possible implementation manner, the obtaining module is further configured to perform lithography on the material to be lithographed by using the reference layout and the incident light source through the reference lithography apparatus to obtain a plurality of second images with position offsets; the determining module is further configured to measure second offsets corresponding to the respective second images, where the second offset corresponding to any one of the second images indicates an offset of the any one of the second images relative to the previous layer image of the any one of the second images, and the previous layer image is an image generated before the any one of the second images during the process of lithographing the any one of the second images; and use the measured plurality of second offsets as the plurality of second offsets corresponding to the reference lithography apparatus.

[0040] In a possible implementation manner, the reference lithography apparatus includes a simulation lithography apparatus; the obtaining module is further configured to simulate a simulation result formed by lithographing the reference layout and the incident light source according to the layout parameters of the reference layout and the light source parameters of the incident light source; the determining module is further configured to determine the plurality of second offsets corresponding to the simulation lithography apparatus according to the simulation result.

[0041] In a possible implementation, the focal length detection result includes a focal length offset, and the focal length offset indicates the amount of focal length that needs to be supplemented before lithography using the target lithography apparatus; the determining module is configured to determine a first reference relationship between each second offset and the second defocus amount corresponding to each second offset, where the first reference relationship indicates the process quality of the reference lithography apparatus; determine a second reference relationship between each first offset and the first defocus amount corresponding to each first offset, where the second reference relationship indicates the process quality of the target lithography apparatus; and determine the focal length offset of the target lithography apparatus according to the first reference relationship and the second reference relationship.

[0042] In a possible implementation, the first reference relationship includes a linear relationship.

[0043] In a possible implementation, the reference layout includes a grating structure layout.

[0044] On the other hand, a computer device is provided, which includes a processor and a memory. At least one computer program is stored in the memory, and the at least one computer program is loaded and executed by the processor so that the computer device implements the focal length detection method of the lithography apparatus described in any one of the above.

[0045] On the other hand, a computer-readable storage medium is further provided. At least one computer program is stored in the computer-readable storage medium, and the at least one computer program is loaded and executed by a processor so that a computer implements the focal length detection method of the lithography apparatus described in any one of the above.

[0046] On the other hand, a computer program product or a computer program is further provided. The computer program product or the computer program includes computer instructions, and the computer instructions are stored in a computer-readable storage medium. The processor of the computer device reads the computer instructions from the computer-readable storage medium, and the processor executes the computer instructions so that the computer device executes the focal length detection method of the lithography apparatus described in any one of the above.

[0047] The technical solution provided by this application at least brings the following beneficial effects:

[0048] In the process of detecting a target lithography apparatus, the incident light source used is a single light source with an inclination angle. The inclination angle existing in the incident light source will cause a position shift during the exposure process. Therefore, the first image obtained by exposing based on the incident light source has a position shift. According to the first offset amount that can reflect the position shift situation, a focal length detection result is obtained. By using reverse thinking to detect the focal length through the position shift, the operation complexity of the focal length detection process is simplified, and the detection efficiency is high. Moreover, during the process of determining the focal length detection result, a second offset amount is also referred to. This second offset amount reflects the position shift that should occur under the condition of good lithography quality. The focal length detection can be achieved through the comparison between the position shifts, and the detection process is simple. BRIEF DESCRIPTION OF THE DRAWINGS

[0049] To more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following-described drawings are only some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0050] Figure 1 is a schematic diagram of an implementation environment provided by an embodiment of the present application;

[0051] Figure 2 is a flowchart of a method for detecting the focal length of a lithography apparatus provided by an embodiment of the present application;

[0052] Figure 3 is a schematic structural diagram of a reference layout provided by an embodiment of the present application;

[0053] Figure 4 is a schematic diagram of an incident light source provided by an embodiment of the present application;

[0054] Figure 5 is a flowchart of a focal length detection provided by an embodiment of the present application;

[0055] Figure 6 is a schematic diagram of a linear relationship provided by an embodiment of the present application;

[0056] Figure 7 is a comparative schematic diagram of a first reference relationship and a second reference relationship provided by an embodiment of the present application;

[0057] Figure 8 is a schematic structural diagram of a focal length detection device for a lithography apparatus provided by an embodiment of the present application;

[0058] Figure 9 is a schematic structural diagram of a server provided by an embodiment of the present application;

[0059] Figure 10It is a schematic structural diagram of a focal length detection device provided by an embodiment of the present application. Detailed implementation manners

[0060] To make the objectives, technical solutions, and advantages of the present application clearer, the following will further describe the embodiments of the present application in detail with reference to the accompanying drawings.

[0061] An embodiment of the present application provides a method for detecting the focal length of a lithography apparatus. Please refer to Figure 1 , which shows a schematic diagram of the method implementation environment provided by an embodiment of the present application. The implementation environment may include: a target lithography apparatus 11 and a detection apparatus 12.

[0062] Optionally, a communication connection may be established between the target lithography apparatus 11 and the detection apparatus 12 in a wired or wireless network manner. The target lithography apparatus 11 performs lithography based on the acquired reference layout and incident light source to obtain a plurality of first images with position offsets. Subsequently, the detection apparatus 12 may determine the first offset amount corresponding to each first image according to the first image, and obtain the focal length detection result of the target lithography apparatus according to the plurality of first offset amounts and the plurality of second offset amounts corresponding to the reference lithography apparatus.

[0063] The above process of focal length detection may be executed interactively by the target lithography apparatus 11 and the detection apparatus 12, or may be executed independently by the target lithography apparatus 11. Exemplarily, the target lithography apparatus 11 may be any apparatus for performing a lithography process to generate a corresponding lithography image, including but not limited to a lithography machine. The detection apparatus 12 may be any apparatus with data processing functions, such as a desktop computer, a laptop computer, or a smart phone and other terminal devices. In addition, the detection apparatus 12 may be an independent terminal device, or may be a device such as a network card configured on a terminal device. The embodiments of the present application do not limit this.

[0064] Those skilled in the art should understand that the above target lithography apparatus 11 and detection apparatus 12 are only examples. Other existing or future possible apparatuses that are applicable to the present application should also be included within the protection scope of the present application and are hereby incorporated herein by reference.

[0065] An embodiment of the present application provides a method for detecting the focal length of a lithography apparatus. The method for detecting the focal length of the lithography apparatus may be based on the above Figure 1 shown implementation environment. The method may be executed by the target lithography apparatus 11 and the detection apparatus 12. The flowchart of the method is as Figure 2 shown, including step 201-step 204.

[0066] In step 201, a reference layout and an incident light source are acquired. The incident light source is a single-sided light source and has an inclination angle, and the inclination angle is used to generate a position offset during the lithography process.

[0067] Exemplarily, taking the detection device as a terminal as an example for illustration hereinafter, the terminal obtains the layout parameters of the reference layout and the light source parameters of the incident light source, thereby clarifying the reference layout and the incident light source to be used in the focal length detection process, and realizing the acquisition of the reference layout and the incident light source. Next, the processes of the terminal obtaining the layout parameters of the reference layout and the light source parameters of the incident light source are introduced respectively.

[0068] In a possible case, the reference layout is used to provide the pattern lithographed by the target lithography device on the material. The reference layout can be a layout designed according to experience or a layout provided by the manufacturer. Optionally, the layout parameters of the reference layout include CD (Critical Dimension), pitch, and size, etc. CD refers to the width of the pattern in the reference layout, pitch refers to the distance between two patterns, and size refers to the size such as the length and width of the reference layout. For the description of the target lithography device, refer to step 202, which will not be elaborated here.

[0069] The terminal can provide an information input control to obtain the layout parameters input based on the information input control. Or, for the case where the reference layout is configured in the target lithography device, for example, the manufacturer reserves a position in the test mask in advance to embed the reference layout, so as to detect the focal length of the target lithography device according to the same test mask subsequently. Among them, the test mask is used to provide a pattern for the performance test of the lithography device, and the mask is also called a reticle. In this case, the terminal can obtain the mask information of the test mask and extract the layout parameters in the mask information. Optionally, the terminal can scan the test mask and determine the mask information according to the scanning result. The terminal can also obtain the mask identifier of the test mask and search for the mask information corresponding to the mask identifier. The mask identifier is, for example, a product serial number or a mask ID (identity document), etc.

[0070] The embodiment of the present application further includes a case where the reference layout does not exist. Then the terminal can first define the layout parameters of the reference layout to generate the reference layout according to the layout parameters. For example, the terminal randomly generates the layout parameters of the reference layout to realize the definition of the layout parameters. Then, the defined layout parameters are sent to the layout manufacturing device, and the layout manufacturing device manufactures the reference layout required for the lithography process according to the received layout parameters. Regardless of the method for obtaining the layout parameters of the reference layout, the layout parameters meet the capability limitations of the lithography device applying the reference layout. Taking the capability limitation as the resolution as an example, the size in the layout parameters is not less than the resolution of the lithography device to ensure that the lithography device can smoothly apply the reference layout corresponding to the layout parameters for lithography.

[0071] The embodiments of the present application do not limit the structure of the reference layout indicated by the layout parameters. The reference layout can be any structure capable of measuring position offset. For example, the reference layout includes a grating structure layout. Figure 3 FIG. is a schematic diagram of a grating structure layout provided by an embodiment of the present application. Figure 3 The CD of the shown grating structure layout is 20 nm (Nanometer), and the pitch is 80 nm, belonging to a periodic structure layout where the distance between any two adjacent gratings is equal.

[0072] Since the grating structure layout is in a line shape, compared with other shapes such as a circular shape, the process of reducing the pitch is simpler. Therefore, the resolution of the grating structure layout can be smaller than that of other structure layouts. During the lithography process based on the grating structure layout with a small resolution, if a position offset occurs, the difficulty of detecting the position offset is less than that of other structure layouts. In addition, the grating structure layout can be Figure 3 not only the periodic structure layout shown, but also an aperiodic structure layout. Moreover, the reference layout can also be other structure layouts, such as the circular shape layout in the above example. That is, the grating structure layout is a preferred reference layout, but in fact, the application of the reference layout is not limited to the grating structure layout.

[0073] The embodiments of the present application do not limit the incident light source obtained by the terminal, which can be any light source capable of generating a position offset. The incident light source can be the light source included in the target lithography device or a light source independent of the target lithography device. Since there is no position offset in the image formed by mapping through a symmetric light source when the incident light source is a symmetric light source, the obtained incident light source needs to be an asymmetric light source, that is, the incident light source is configured on one side and has an inclination angle. In some cases, the incident light source can be called an obliquely incident single beam, and the single beam can be placed according to the layout structure of the reference layout. Taking the Figure 3 vertical grating structure shown as an example of the reference layout, the incident light source needs to be placed on the left or right. Taking the horizontal grating structure as an example of the reference layout, the incident light source needs to be placed on the upper or lower side, etc. The process of obtaining the light source parameters of the incident light source is similar to the process of obtaining the layout parameters. The terminal can also receive the light source parameters input based on the information input control to obtain the incident light source. For a detailed description, refer to the relevant description of obtaining the layout parameters above, and it will not be repeated here.

[0074] Optionally, the light source parameters of the incident light source obtained by the terminal include the light source type, beam center, and coherence, etc. Among them, the value range of coherence can be from -100 nm to 100 nm. Figure 4 FIG. is a schematic diagram of an incident light source provided by an embodiment of the present application.Figure 4 The light source type of the incident light source in Figure 4 is NA (Numerical Aperture) 1.35, the beam center is 0.8, and the coherence is 0.2. Exemplarily, the light source parameters of the incident light source further include a center deviation parameter σ, and this center deviation parameter indicates Figure 4 the ratio of the distance between the centers of the small circle and the large circle in Figure 4 to the radius of the large circle. The larger the center deviation parameter, the more asymmetric the incident light source is, and the better the effect of the generated position offset. Since exposure cannot be achieved when the center deviation parameter is greater than 1, the value range of the center deviation parameter of the incident light source obtained by the terminal is 0 to 0.9.

[0075] In step 202, a reference layout and an incident light source are used to perform lithography on the material to be lithographed by the target lithography device to be measured, and a plurality of first images with position offsets are obtained.

[0076] Exemplarily, the target lithography device can be any lithography device with a need for focal length detection. The target lithography device can be a lithography machine or other instruments for mapping the pattern of the reference layout onto the material to be lithographed. Among them, the material to be lithographed can be a silicon wafer, a photoresist, or other materials that need to be etched with patterns, and the embodiments of the present application do not limit this.

[0077] In a possible case, although the tilt angle of the incident light source can generate a position offset, the specific amount of offset is related to the defocus amount used by the target lithography device during the lithography process. The defocus amount refers to the distance between the stage for placing the material to be lithographed by the target lithography device and the focus. Therefore, before performing lithography, it is also necessary to obtain the first defocus amount of the target lithography device to form the first image by lithography using the target lithography device according to the first defocus amount.

[0078] In a possible implementation manner, during the process of the terminal detecting the focal length of the target lithography device, a reference lithography device is used as a reference. Among them, the lithography quality of the reference lithography device is not lower than that of the target lithography device. The embodiments of the present application do not limit the reference lithography device, which can be a simulation lithography device or a physical lithography device with high lithography quality. High lithography quality means, for example, that the clarity of the pattern obtained by lithography is not lower than the clarity threshold. The clarity of the pattern can be determined by scanning with a scoring model or by manual review. The clarity threshold can be set according to experience. A physical lithography device is, for example, a BL (baseline) lithography machine. Since the lithography quality of the reference lithography device is high, in some cases, the reference lithography device can be understood as an ideal lithography device with an ideal lithography quality. Therefore, the terminal can use the reference lithography device as a reference to judge the gap in focal length between the target lithography device and the ideal lithography device.

[0079] Optionally, the reference lithography apparatus may also be a lithography machine used for product manufacturing that needs to be applied to the same product together with the target lithography apparatus. Since the reference lithography apparatus and the target lithography apparatus need to manufacture the same product, the machines of the reference lithography apparatus and the target lithography apparatus need to be aligned to ensure that the manufactured products are consistent. Based on this, the terminal can use the reference lithography apparatus that needs to be aligned as a reference to perform focal length detection on the target lithography apparatus.

[0080] Regardless of the above situations of the reference lithography apparatus, the lithography quality of the reference lithography apparatus is not lower than that of the target lithography apparatus. Among them, the lithography quality can be, in addition to the clarity of the image lithographed in the above examples, the jitter value of the lines in the lithographed image or other parameters.

[0081] Since the terminal needs to use the reference lithography apparatus as a reference to detect the target lithography apparatus, variables that affect the lithography result need to be controlled during the process of the terminal using the reference lithography apparatus for lithography and the target lithography apparatus for lithography. The variables are, for example, the incident light source, the reference layout, and the defocus amount, etc. That is, the incident light source and the reference layout used by the target lithography apparatus and the reference lithography apparatus need to be the same, and the defocus amount needs to be the same or there is a corresponding relationship. Therefore, for case one where the reference lithography apparatus has completed lithography and measurement, the terminal needs to select the first defocus amount used by the target lithography apparatus according to the second defocus amount used by the reference lithography apparatus for lithography. For case two where the reference lithography apparatus has not been lithographed and measured, the terminal can randomly set the first defocus amount used by the target lithography apparatus, and then select the second defocus amount of the reference lithography apparatus according to the first defocus amount of the target lithography apparatus.

[0082] Since the process of detecting the focal length of the target lithography apparatus is similar whether the lithography of the target lithography apparatus is performed first or the lithography of the reference lithography apparatus is performed first, therefore, next, the lithography measurement process of the reference lithography apparatus is taken as an example for illustration, but in fact, the embodiments of the present application do not limit the lithography sequence.

[0083] Exemplarily, the terminal uses a reference layout and an incident light source to lithograph the material to be lithographed through a reference lithography device, obtaining a plurality of second images with position offsets. In a possible case, the plurality of second images are lithographed based on different second defocus amounts. Therefore, before lithographing using the reference lithography device, the terminal also needs to determine the second defocus amount used during the lithography process of the reference lithography device. Optionally, the plurality of second defocus amounts are set based on experience. The plurality of second defocus amounts can be set randomly or selected according to an interval parameter. The difference between any two adjacent second defocus amounts selected is the same as the interval parameter. Taking the interval parameter as 5 determined based on experience as an example, the set plurality of second defocus amounts are 5, 10, 15, 20, etc. After determining the second defocus amount, the terminal uses different second defocus amounts to respectively lithograph the reference layout through the incident light source to obtain a plurality of second images.

[0084] For the case where the reference lithography device includes a simulation lithography device, the above process of obtaining the second image can be implemented through simulation, such as spatial image simulation. Optionally, the simulation process includes, but is not limited to, the terminal simulating the simulation result formed by lithographing using the reference layout and the incident light source according to the layout parameters of the reference layout and the light source parameters of the incident light source. Figure 5 It is a flowchart of a focal length detection provided by an embodiment of the present application. After the terminal defines the reference layout and the incident light source, it performs spatial image simulation and simulates the exposure of the simulation lithography device to obtain a simulation result, that is, the simulated photoresist pattern.

[0085] Since the reference lithography device is a lithography device that needs to be aligned with the target lithography device, the first defocus amount used during the lithography process of the target lithography device needs to be selected according to the second defocus amount to achieve variable control of the reference layout, defocus amount, and incident light source. The embodiment of the present application does not limit the process of selecting the first defocus amount, which can be implemented through, but is not limited to, the following two methods.

[0086] Selection method 1: Select all or part of the second defocus amounts from the plurality of second defocus amounts used by the reference lithography device, and use the selected second defocus amounts as the first defocus amount.

[0087] Optionally, the terminal can randomly select the first defocus amount from the second defocus amounts, or first determine the reference quantity of the first defocus amount to be used, and then select the second defocus amount according to the determined reference quantity and the total number of the plurality of second defocus amounts. Taking the total number of the second defocus amounts as 10 as an example, when the determined reference quantity is 5, since 10 divided by 5 is equal to 2, the terminal selects a second defocus amount every other one from the plurality of second defocus amounts as the first defocus amount.

[0088] Selection method 2: Select the defocus amount according to the linear relationship corresponding to the plurality of second defocus amounts, and use the selected defocus amount as the first defocus amount.

[0089] Exemplarily, the linear relationship corresponding to the second defocus amount refers to the linear relationship obtained by fitting based on the second defocus amount and the second offset amount corresponding to the second defocus amount. The second offset amount is used to describe the position offset degree of the second image. For the process of determining the second offset amount, reference can be made to the relevant content in step 204, which will not be repeated here.

[0090] The terminal can determine the defocus amount corresponding to the second offset amount when the second offset amount meets the selection condition according to the linear relationship, and obtain the first defocus amount. For example, the second offset amount meets the selection condition when the number of non-zero digits of the second offset amount is not greater than the digit threshold set based on experience. Taking the digit threshold as 3 as an example, in this case, Figure 6 for -0.0004, -0.0002, 0.0004, and 0.0002 in, the number of non-zero digits is 1, which is less than 3, and they belong to the second offset amounts that meet the selection condition, Figure 6 for 0 in, the number of non-zero digits is 0, which is also less than 3, and it belongs to the second offset amount that meets the selection condition. Therefore, the terminal can select -100, -50, 0, 50, and 100 as the first defocus amount.

[0091] Optionally, the terminal can also select the integer defocus amount closest to the second defocus amount according to the linear relationship, and use the selected integer defocus amount as the first defocus amount. In addition, the first defocus amount selected based on the linear relationship can be the same as the second defocus amount or different from the second defocus amount. This application embodiment does not limit this.

[0092] Exemplarily, regardless of the manner in which the terminal selects the first defocus amount, lithography can be performed according to the first defocus amount. The lithography process includes but is not limited to: irradiating a reference layout with an incident light source, and irradiating the light passing through the reference layout on the material to be lithographed according to a plurality of first defocus amounts through a target lithography device, and performing lithography on the irradiated material to obtain a plurality of first images with position offsets. For example, based on the communication connection with the target lithography device, the terminal adjusts the defocus amount of the target lithography device. The adjustment process is, for example, moving the stage on which the material is placed upward or downward along the z-axis direction, so as to change the distance between the material and the focus. Then, the terminal controls the incident light source to irradiate the reference layout. The light passing through the reference layout passes through the lens configured on the target lithography device, and the light is focused and projected onto the material on the stage through the lens, so as to map the pattern of the reference layout onto the material to be lithographed. The target lithography device performs exposure on the irradiated material, and the image formed after exposure is also the first image. Since the incident light source is an asymmetric light source, the first image obtained by irradiation has a position offset.

[0093] After that, the terminal can continue to adjust the defocus amount used by the target lithography apparatus, and perform lithography respectively according to different first defocus amounts to obtain a plurality of first images. Since the plurality of first images are obtained by lithography with different first defocus amounts, the position offset degrees of the plurality of first images are different. In addition, the process of obtaining a plurality of first images by lithography with the target lithography apparatus can be executed by the terminal controlling the target lithography apparatus, or can be executed by other devices or manually controlling the target lithography apparatus. In this case, the terminal can interactively obtain the first images formed by lithography with the target lithography apparatus.

[0094] In step 203, measure the first offset amount corresponding to each first image. The first offset amount corresponding to any first image indicates the offset amount of any first image relative to the previous layer image of any first image. The previous layer image is the image generated before any first image during the process of lithography to obtain any first image.

[0095] In a possible implementation manner, the terminal can determine the first offset amount based on the offset situation between the first image and the previous layer image. For the case where lithography is performed layer by layer by exposure, the previous layer image is the image located before the first image. The previous layer image can be the adjacent image before the first image, or can be the image with an interval between it and the first image. The process for the terminal to determine the first offset amount according to the previous layer image and the first image includes but is not limited to: determining the first image center of any first image and the second image center of the previous layer image of the first image; determining the center offset amount between the first image center and the second image center as the first offset amount corresponding to any first image.

[0096] Exemplarily, the first image center can be the geometric center of the first image or the visual center of the first image. Taking Figure 3 the reference layout as an example, if the pattern of the first image formed by irradiation is Figure 3 consistent, then the visual center can be Figure 3 the midpoint of the rectangle in. The second image center is similar to the first image center and can be the geometric center or the visual center. In addition, the first image center and the second image center can also be any corresponding marked center points. For example, mark the upper left corner of the first grating on the leftmost side of the first image as the first image center, and mark the upper left corner of the first grating on the leftmost side of the previous layer image as the second image center.

[0097] Regardless of the above situations of the first image center and the second image center, the terminal can determine the distance between the first image center and the second image center as the center offset amount. Among them, the terminal can measure the distance between the first image center and the second image center, or can determine the coordinates of the first image center and the second image center in the same plane coordinate system, and calculate the distance according to the determined coordinates.

[0098] In addition, the first image center and the second image center may be one center point in the above examples, or may include multiple center points. In the case where the first image center includes multiple center points, the terminal can calculate the distances between the multiple center points, determine the average value of the multiple distances, and obtain the center offset. Taking the multiple center points as the geometric center and the upper left vertex in the above embodiment as an example, the terminal calculates the distance 1 between the geometric center of the previous layer image and the geometric center of the first image, calculates the distance 2 between the upper left vertex of the previous layer image and the upper left vertex of the first image, and determines the average value of the distance 1 and the distance 2 as the center offset to obtain the second offset.

[0099] In addition, the terminal can choose to first obtain multiple first images, and then determine the first offset corresponding to each first image. It can also determine the first offset corresponding to a first image after obtaining one first image, and after determination, continue to obtain the next first image. For example, the terminal operates the target lithography device to lithographically form a first image A according to the first defocus amount A, and calculates the first offset based on the first image center of the first image A and the second image center of the previous layer image. After that, the terminal adjusts the defocus amount of the target lithography device from the first defocus amount A to the first defocus amount B, operates the target lithography device to lithographically form a first image B according to the first defocus amount B, and calculates the first offset corresponding to the first image B.

[0100] In step 204, the focal length detection result of the target lithography device is determined according to the first offsets corresponding to the respective first images and the multiple second offsets corresponding to the reference lithography device, and the lithography quality of the reference lithography device is not lower than that of the target lithography device.

[0101] In a possible case, the terminal needs to obtain the second offset before determining the focal length detection result. The process for the terminal to obtain the second offset includes but is not limited to: using a reference layout and an incident light source, performing lithography on the material to be lithographed through the reference lithography device to obtain multiple second images with position offsets; measuring the second offsets corresponding to the respective second images, and the second offset corresponding to any second image indicates the offset of any second image relative to the previous layer image of any second image, and the previous layer image is the image generated before any second image during the process of lithographically obtaining any second image; taking the multiple measured second offsets as the multiple second offsets corresponding to the reference lithography device.

[0102] Among them, the process of forming the second image by lithography using the reference lithography apparatus is similar to the process of forming the first image by lithography using the target lithography apparatus. For the description of forming the first image by lithography, reference can be made to the above embodiments, and details will not be repeated here. After obtaining multiple second images obtained by lithography, the terminal can determine the second offset amount corresponding to the second image. The process of determining the second offset amount is similar to the process of determining the first offset amount. For the detailed description, reference can be made to the relevant content in step 203, and details will not be elaborated here.

[0103] For the case where the reference lithography apparatus is a simulation lithography apparatus, the terminal can determine multiple second offset amounts corresponding to the simulation lithography apparatus according to the simulation results. Taking the simulation result as the photoresist pattern as an example, the terminal can measure the second offset amount corresponding to the photoresist pattern, and use the measured second offset amount as the second offset amount corresponding to the simulation lithography apparatus. Among them, the process of measuring the second offset amount corresponding to the photoresist pattern is similar to the process of measuring the first offset amount. For the relevant description, reference can be made to step 203, and details will not be repeated here.

[0104] The embodiments of the present application do not limit the process of determining the focal length detection result according to the first offset amount and the second offset amount, and can be implemented by including but not limited to the following two determination methods.

[0105] Determination method 1: Calculate the difference between the first offset amount and the second offset amount corresponding to the first offset amount, judge whether there is an abnormality in the position offset of the target lithography apparatus according to the calculated difference, and obtain an abnormality judgment result; determine the focal length judgment result according to the abnormality judgment result.

[0106] Determination method 1 is applied to the case where the focal length detection result includes a focal length judgment result, and the focal length judgment result indicates whether the focal length is abnormal. Exemplarily, the second offset amount corresponding to the first offset amount means that the second offset amount and the first offset amount are generated based on the same defocus amount. Taking multiple second defocus amounts including second defocus amount A, second defocus amount B, second defocus amount C,..., second defocus amount G as an example, the terminal selects second defocus amount A, second defocus amount B, second defocus amount C, and second defocus amount D from the multiple second defocus amounts as the first defocus amounts, respectively performs lithography to obtain the first images, and calculates the first offset amount A, first offset amount B, first offset amount C, and first offset amount D according to the first images. Then, the second offset amount corresponding to the first offset amount A is the second offset amount A calculated according to the second image A, and the second image A is obtained by lithography using the reference lithography apparatus based on the second defocus amount A.

[0107] After determining the first offset amount corresponding to each second offset amount, the terminal calculates the difference between each second offset amount and the first offset amount, and compares the size relationship between the difference and the offset threshold set based on experience. When the difference is greater than the offset threshold, it is determined that the first offset amount has an offset abnormality. When the difference is not greater than the offset threshold, it is determined that the first offset amount does not have an offset abnormality.

[0108] Optionally, when the determination result of any first offset indicates an offset anomaly, the terminal may determine that the anomaly determination result is that the position offset of the target lithography apparatus is abnormal. The terminal may also count the first quantity of the first offsets with offset anomalies. When the first quantity is greater than the tolerance threshold set based on experience, the terminal determines that the anomaly determination result is that the position offset of the target lithography apparatus is abnormal. The terminal may also continue to determine the second quantity of the first offsets without offset anomalies. When the first quantity is greater than the second quantity, the terminal determines that the anomaly determination result is that the position offset of the target lithography apparatus is abnormal.

[0109] Since the first offset and the second offset are calculated based on the same defocus amount, reference layout, and incident light source, the offset anomaly of the first offset is caused by the abnormal focal length of the target lithography apparatus. When the anomaly determination result is that the position offset of the target lithography apparatus is abnormal, the terminal may determine that the focal length determination result is abnormal focal length. When the anomaly determination result is that the position offset of the target lithography apparatus is normal, the terminal determines that the focal length determination result is normal focal length.

[0110] Determination method 2: For the case where the focal length detection result includes a focal length offset amount, which indicates the amount of focal length that needs to be supplemented before lithography using the target lithography apparatus, the terminal determines a first reference relationship between each second offset and the second defocus amount corresponding to each second offset. The first reference relationship indicates the process quality of the reference lithography apparatus; determines a second reference relationship between each first offset and the first defocus amount corresponding to each first offset. The second reference relationship indicates the process quality of the target lithography apparatus; determines the focal length offset amount of the target lithography apparatus according to the first reference relationship and the second reference relationship.

[0111] Since the degree of position offset indicated by the second offset is related not only to the defocus amount but also to the process quality of the reference lithography apparatus, such as the focal length of the reference lithography apparatus. Therefore, after obtaining the second offset, the terminal may determine a first reference relationship according to the second offset and the second defocus amount of each second image. The corresponding situation of the second offset and the second defocus amount indicated by the first reference relationship is related to the process quality of the reference lithography apparatus. Exemplarily, the process for the terminal to determine the first reference relationship includes: determining the linear relationship between the second offset corresponding to each second image and the second defocus amount corresponding to each second image to obtain the first reference relationship.

[0112] Among them, the second offset corresponding to the second image refers to the second offset calculated based on the third image center of the second image and the fourth image center of the previous layer image, and the second defocus amount corresponding to the second image refers to the second defocus amount used when the second image is lithographed by the reference lithography apparatus. Since one second image corresponds to one second offset and also corresponds to the second defocus amount, there is a corresponding second defocus amount for the second offset. The terminal can perform fitting according to the corresponding relationship between the second offset and the second defocus amount to obtain a linear relationship y = kx + b. Wherein, y is the second offset, x is the second defocus amount, b is a constant, and k is the slope. Figure 6 It is a schematic diagram of a linear relationship provided by an embodiment of the present application. Figure 6 The abscissa in is the second defocus amount, with the unit of nm, and the ordinate is the second offset, with the unit of μm (Micrometre, micron). See Figure 6 The second offset and the second defocus amount are linearly related and b is 0.

[0113] In a possible implementation manner, the terminal can also perform calibration during the fitting process and determine a first reference relationship according to the calibrated linear relationship. Optionally, the terminal plots the fitting result and reference points of the second defocus amount and the second offset in a statistical graph, eliminates the reference points whose distance from the fitting result is greater than the distance threshold according to the distribution of the reference points, and re-fits according to the remaining multiple reference points to obtain a linear relationship, so as to fix the linear relationship between the second offset and the second defocus amount. Among them, the reference point refers to the coordinate point whose abscissa is the second defocus amount and the ordinate is the second offset corresponding to the second defocus amount, and the distance threshold can be set based on experience and the implementation environment. After obtaining the calibrated linear relationship, the terminal can determine the calibrated linear relationship as the first reference relationship.

[0114] When the reference lithography apparatus is a simulation lithography apparatus, the terminal can also determine the first reference relationship according to the lithography resist pattern obtained by simulation. For example Figure 5 As shown, the terminal can measure the second offset of the lithography resist pattern, perform fitting according to the second offset and the second defocus amount to obtain a fitting result, and calibrate the fitting result, and use the calibrated fitting result as the linear relationship between the second offset and the second defocus amount. In a possible case, the lithography resist pattern corresponds to the second image in the above embodiment. The process of determining the linear relationship according to the lithography resist pattern is similar to the process of determining the first reference relationship according to the second image. For specific descriptions, reference can be made to the above embodiment and will not be repeated here.

[0115] Exemplarily, the process by which the terminal determines the second reference relationship based on the first offset and the first defocus amount is similar to the process of determining the first reference relationship based on the second offset and the second defocus amount. That is, a linear relationship between the first offset and the first defocus amount is also fitted, and the fitted linear relationship is determined as the second reference relationship. For a detailed description, reference can be made to the relevant content of determining the first reference relationship in the foregoing embodiments, which will not be repeated here. In a possible case, after determining the second reference relationship, the terminal may determine the focal length offset based on the second reference relationship and the first reference relationship. Optionally, the terminal may calculate the difference between the defocus amounts corresponding to the same offset in the first reference relationship and the second reference relationship, and use the determined difference as the focal length offset.

[0116] Figure 7 FIG. is a comparison schematic diagram of a first reference relationship and a second reference relationship provided by an embodiment of the present application. Refer to Figure 7 , Figure 7 The defocus amounts in include a first defocus amount and a second defocus amount, the center position offsets include a first offset and a second offset, the simulation data refers to the linear relationship fitted according to the reference lithography apparatus, and the measured data refers to the linear relationship fitted according to the target lithography apparatus. The terminal determines the focal length offset of the target lithography apparatus based on the difference between the defocus amounts corresponding to the same center position offset.

[0117] For the case where the reference lithography apparatus is a lithography apparatus with high lithography accuracy, since the reference lithography apparatus reflects an ideal lithography apparatus with ideal lithography quality, therefore, the gap between the target lithography apparatus and the ideal lithography apparatus can be determined through the focal length offset, so as to perform focal length compensation through the focal length offset to shorten the gap between the target lithography apparatus and the ideal lithography apparatus, and further improve the lithography accuracy of the target lithography apparatus, making the lithography quality of the target lithography apparatus closer to the ideal effect. For the case where the reference lithography apparatus and the target lithography apparatus are used to manufacture the same product, focal length compensation is performed through the focal length offset to achieve alignment between the target lithography apparatus and the reference lithography apparatus, and to avoid the problem of uneven quality of the products manufactured by the reference lithography apparatus and the target lithography apparatus.

[0118] In a possible case, the terminal may use the focal length offset as the focal length amount to be compensated. Taking the determined focal length offset of -50 nm as an example, before performing lithography using the target lithography apparatus, the focal length of the target lithography apparatus is reduced by 50 nm to achieve focal length compensation.

[0119] Exemplarily, the terminal may choose to execute either determination method 1 or determination method 2 to obtain the focal length detection result. For example Figure 5 as shown, Figure 5For the process of obtaining the focal length detection result by using the second determination method, after the terminal exposes the target lithography apparatus multiple times with an incident light source and a first defocus amount, multiple first images are obtained, and the first offset amount of the target lithography apparatus is measured according to the multiple first images, so as to calculate the focal length offset amount according to the first offset amount. The terminal can also execute multiple determination methods to obtain the focal length detection result including multiple data. For example, the terminal executes the first determination method and the second determination method to obtain the focal length judgment result and the focal length offset amount.

[0120] In summary, the embodiment of the present application provides a method for detecting the focal length of a lithography apparatus. During the process of detecting the target lithography apparatus, the position offset will be generated by using the incident light source, so as to judge whether the offset is real and accurate according to the first offset amount that can reflect the position offset situation, and obtain the focal length detection result. The focal length is detected by using the position offset through reverse thinking, and the operation complexity is low. Moreover, the second offset amount corresponding to the reference lithography apparatus with excellent lithography quality is used as the benchmark for judging whether the first offset amount is real and accurate, and the judgment process is based on the benchmark, so the accuracy and credibility are high. In addition, in addition to judging whether the focal length is abnormal according to the first offset amount, the focal length amount that the target lithography apparatus needs to compensate can be further calculated, so as to improve the lithography quality of the target lithography apparatus.

[0121] See Figure 8 , the embodiment of the present application provides a focal length detection device for a lithography apparatus, and the device includes:

[0122] An acquisition module 801, configured to acquire a reference layout and an incident light source, where the incident light source is a single-sided light source and has an inclination angle, and the inclination angle is used to generate a position offset during the lithography process;

[0123] The acquisition module 801 is further configured to use the reference layout and the incident light source to perform lithography on the material to be lithographed through the target lithography apparatus to be measured, so as to obtain multiple first images with position offsets;

[0124] A determination module 802, configured to measure the first offset amount corresponding to each first image, where the first offset amount corresponding to any first image indicates the offset amount of any first image relative to the previous layer image of any first image, and the previous layer image is the image generated before any first image during the process of lithographing any first image;

[0125] The determination module 802 is further configured to determine the focal length detection result of the target lithography apparatus according to the first offset amount corresponding to each first image and the multiple second offset amounts corresponding to the reference lithography apparatus, and the lithography quality of the reference lithography apparatus is not lower than that of the target lithography apparatus.

[0126] In a possible implementation, an acquisition module 801 is configured to irradiate a reference layout with an incident light source, and irradiate the light passing through the reference layout onto a material to be lithographed according to a plurality of first defocus amounts of a target lithography device, and perform lithography on the irradiated material to obtain a plurality of first images with position offsets.

[0127] In a possible implementation, the acquisition module 801 is further configured to select all or part of the second defocus amounts used in lithography by a reference lithography device, and use the selected second defocus amounts as the first defocus amounts.

[0128] In a possible implementation, a determination module 802 is configured to, for any one of the first images, determine a first image center of any one of the first images and a second image center of a previous layer image of any one of the first images; and determine a center offset amount between the first image center and the second image center as a first offset amount corresponding to any one of the first images.

[0129] In a possible implementation, the acquisition module 801 is further configured to use the reference layout and the incident light source to perform lithography on the material to be lithographed by a reference lithography device to obtain a plurality of second images with position offsets; the determination module 802 is further configured to measure second offset amounts corresponding to the respective second images, where the second offset amount corresponding to any one of the second images indicates the offset amount of any one of the second images relative to a previous layer image of any one of the second images, and the previous layer image is an image generated before any one of the second images during the process of lithographing any one of the second images; and use the measured plurality of second offset amounts as the plurality of second offset amounts corresponding to the reference lithography device.

[0130] In a possible implementation, the reference lithography device includes a simulation lithography device; the acquisition module 801 is further configured to simulate a simulation result formed by lithographing using the reference layout and the incident light source according to layout parameters of the reference layout and light source parameters of the incident light source; the determination module 802 is further configured to determine a plurality of second offset amounts corresponding to the simulation lithography device according to the simulation result.

[0131] In a possible implementation, the focal length detection result includes a focal length offset amount, and the focal length offset amount indicates the amount of focal length that needs to be supplemented before performing lithography using the target lithography device; the determination module 802 is configured to determine a first reference relationship between each of the second offset amounts and the second defocus amount corresponding to each of the second offset amounts, where the first reference relationship indicates the process quality of the reference lithography device; determine a second reference relationship between each of the first offset amounts and the first defocus amount corresponding to each of the first offset amounts, where the second reference relationship indicates the process quality of the target lithography device; and determine the focal length offset amount of the target lithography device according to the first reference relationship and the second reference relationship.

[0132] In a possible implementation, the first reference relationship includes a linear relationship.

[0133] In a possible implementation, the reference layout includes a grating structure layout.

[0134] During the process of detecting the target lithography apparatus, the incident light source adopted by the above device is a single light source with an inclination angle. The inclination angle existing in the incident light source will cause a position shift during the exposure process. Therefore, the first image obtained by exposing based on the incident light source has a position shift. According to the first offset amount that can reflect the position shift situation, the focal length detection result is obtained. By using reverse thinking to detect the focal length through the position shift, the operation complexity of the focal length detection process is simplified, and the detection efficiency is high. Moreover, during the process of determining the focal length detection result, the second offset amount is also referred to. The second offset amount reflects the position shift that should occur under the condition of good lithography quality. The focal length detection can be achieved through the comparison between the position shifts, and the detection process is simple.

[0135] It should be noted that when the device provided in the above embodiment realizes its functions, only the division of the above functional modules is used for illustration. In practical applications, the above functions can be allocated to different functional modules according to needs, that is, the internal structure of the device is divided into different functional modules to complete all or part of the functions described above. In addition, the device provided in the above embodiment and the method embodiment belong to the same concept. For the specific implementation process, please refer to the method embodiment, which will not be elaborated here.

[0136] Figure 9 FIG. is a schematic structural diagram of a server provided by an embodiment of the present application. The server can be used to perform operations related to the detection device. The server may vary greatly due to configuration or performance differences, and may include one or more processors (Central Processing Unit, CPU) 901 and one or more memories 902. Among them, at least one computer program is stored in the one or more memories 902, and the at least one computer program is loaded and executed by the one or more processors 901 to enable the server to implement the focal length detection method of the lithography apparatus provided by each of the above method embodiments. Of course, the server may also have components such as a wired or wireless network interface, a keyboard, and an input / output interface for input / output. The server may also include other components for implementing the functions of the device, which will not be elaborated here.

[0137] Figure 10 FIG. is a schematic structural diagram of a focal length detection device provided by an embodiment of the present application. The device can be a terminal, for example, it can be: a smart phone, a tablet computer, a player, a notebook computer, or a desktop computer. The terminal may also be referred to by other names such as user equipment, portable terminal, laptop terminal, desktop terminal, etc.

[0138] Generally, a terminal includes: a processor 1001 and a memory 1002.

[0139] The processor 1001 may include one or more processing cores, such as a 4-core processor, an 8-core processor, etc. The processor 1001 may be implemented in at least one hardware form of DSP (Digital Signal Processing), FPGA (Field-Programmable Gate Array), and PLA (Programmable Logic Array). The processor 1001 may also include a main processor and a coprocessor. The main processor is a processor for processing data in the wake state, also known as the CPU (Central Processing Unit); the coprocessor is a low-power processor for processing data in the standby state. In some embodiments, the processor 1001 may be integrated with a GPU (Graphics Processing Unit), and the GPU is responsible for rendering and drawing the content to be displayed on the display screen. In some embodiments, the processor 1001 may further include an AI (Artificial Intelligence) processor, and the AI processor is used to process computational operations related to machine learning.

[0140] The memory 1002 may include one or more computer-readable storage media, and the computer-readable storage media may be non-transitory. The memory 1002 may further include high-speed random access memory and non-volatile memory, such as one or more disk storage devices and flash storage devices. In some embodiments, the non-transitory computer-readable storage media in the memory 1002 is used to store at least one instruction, and the at least one instruction is used to be executed by the processor 1001 so that the terminal implements the focal length detection method of the lithography apparatus provided in the method embodiment of the present application.

[0141] In some embodiments, the terminal may further optionally include: a peripheral device interface 1003 and at least one peripheral device. The processor 1001, the memory 1002, and the peripheral device interface 1003 may be connected through a bus or signal lines. Each peripheral device may be connected to the peripheral device interface 1003 through a bus, signal lines, or a circuit board. Specifically, the peripheral device includes at least one of a radio frequency circuit 1004, a display screen 1005, a camera assembly 1006, an audio circuit 1007, and a power supply 1008.

[0142] The peripheral device interface 1003 can be used to connect at least one I / O (Input / Output) related peripheral device to the processor 1001 and the memory 1002. In some embodiments, the processor 1001, the memory 1002, and the peripheral device interface 1003 are integrated on the same chip or circuit board; in some other embodiments, any one or two of the processor 1001, the memory 1002, and the peripheral device interface 1003 can be implemented on a separate chip or circuit board, and this embodiment does not limit this.

[0143] The radio frequency circuit 1004 is used to receive and transmit RF (Radio Frequency) signals, also known as electromagnetic signals. The radio frequency circuit 1004 communicates with a communication network and other communication devices through electromagnetic signals. The radio frequency circuit 1004 converts an electrical signal into an electromagnetic signal for transmission, or converts a received electromagnetic signal into an electrical signal. Optionally, the radio frequency circuit 1004 includes: an antenna system, an RF transceiver, one or more amplifiers, a tuner, an oscillator, a digital signal processor, a codec chipset, a subscriber identity module card, and so on. The radio frequency circuit 1004 can communicate with other terminals through at least one wireless communication protocol. The wireless communication protocol includes but is not limited to: metropolitan area network, each generation of mobile communication network (2G, 3G, 4G, and 5G), wireless local area network, and / or WiFi (Wireless Fidelity) network. In some embodiments, the radio frequency circuit 1004 may further include a circuit related to NFC (Near Field Communication), and this application does not limit this.

[0144] The display screen 1005 is used to display the UI (User Interface). The UI may include graphics, text, icons, videos, and any combination thereof. When the display screen 1005 is a touch display screen, the display screen 1005 also has the ability to collect touch signals on or above the surface of the display screen 1005. The touch signals can be input to the processor 1001 as control signals for processing. At this time, the display screen 1005 can also be used to provide virtual buttons and / or a virtual keyboard, also known as soft buttons and / or a soft keyboard. In some embodiments, there can be one display screen 1005, which is provided on the front panel of the terminal; in other embodiments, there can be at least two display screens 1005, which are respectively provided on different surfaces of the terminal or are in a foldable design; in other embodiments, the display screen 1005 can be a flexible display screen, which is provided on a curved surface or a folding surface of the terminal. Even, the display screen 1005 can also be set to an irregular non-rectangular shape, that is, an irregular-shaped screen. The display screen 1005 can be prepared using materials such as LCD (Liquid Crystal Display) and OLED (Organic Light-Emitting Diode).

[0145] The camera module 1006 is used to collect images or videos. Optionally, the camera module 1006 includes a front camera and a rear camera. Generally, the front camera is provided on the front panel of the terminal, and the rear camera is provided on the back of the terminal. In some embodiments, there are at least two rear cameras, which are any one of a main camera, a depth-of-field camera, a wide-angle camera, and a telephoto camera respectively, so as to implement functions such as the combination of the main camera and the depth-of-field camera to achieve the background blurring function, the combination of the main camera and the wide-angle camera to achieve panoramic shooting and VR (Virtual Reality) shooting functions or other combined shooting functions. In some embodiments, the camera module 1006 can also include a flash. The flash can be a single-color-temperature flash or a dual-color-temperature flash. The dual-color-temperature flash refers to the combination of a warm-light flash and a cold-light flash, which can be used for light compensation under different color temperatures.

[0146] The audio circuit 1007 may include a microphone and a speaker. The microphone is used to collect sound waves of the user and the environment, and convert the sound waves into electrical signals for input to the processor 1001 for processing, or input to the radio frequency circuit 1004 to achieve voice communication. For the purpose of stereo collection or noise reduction, there may be multiple microphones, which are respectively arranged at different parts of the terminal. The microphone may also be an array microphone or an omnidirectional collection microphone. The speaker is used to convert the electrical signal from the processor 1001 or the radio frequency circuit 1004 into sound waves. The speaker may be a traditional thin film speaker or a piezoelectric ceramic speaker. When the speaker is a piezoelectric ceramic speaker, it can not only convert the electrical signal into sound waves audible to humans, but also convert the electrical signal into sound waves inaudible to humans for uses such as ranging. In some embodiments, the audio circuit 1007 may further include a headphone jack.

[0147] The power supply 1008 is used to supply power to each component in the terminal. The power supply 1008 may be alternating current, direct current, a disposable battery or a rechargeable battery. When the power supply 1008 includes a rechargeable battery, the rechargeable battery may support wired charging or wireless charging. The rechargeable battery may also be used to support fast charging technology.

[0148] In some embodiments, the terminal further includes one or more sensors 1009. The one or more sensors 1009 include but are not limited to: an acceleration sensor 1010, a gyroscope sensor 1011, a pressure sensor 1012, an optical sensor 1013 and a proximity sensor 1014.

[0149] The acceleration sensor 1010 can detect the magnitude of acceleration on the three coordinate axes of the coordinate system established by the terminal. For example, the acceleration sensor 1010 can be used to detect the components of the gravitational acceleration on the three coordinate axes. The processor 1001 can control the display screen 1005 to display the user interface in a landscape view or a portrait view according to the gravitational acceleration signal collected by the acceleration sensor 1010. The acceleration sensor 1010 can also be used for collecting game or user's motion data.

[0150] The gyroscope sensor 1011 can detect the body direction and rotation angle of the terminal. The gyroscope sensor 1011 can cooperate with the acceleration sensor 1010 to collect the 3D actions of the user on the terminal. According to the data collected by the gyroscope sensor 1011, the processor 1001 can implement the following functions: motion sensing (such as changing the UI according to the user's tilt operation), image stabilization during shooting, game control and inertial navigation.

[0151] The pressure sensor 1012 can be disposed on the side frame of the terminal and / or the lower layer of the display screen 1005. When the pressure sensor 1012 is disposed on the side frame of the terminal, it can detect the holding signal of the user on the terminal, and the processor 1001 can perform left / right hand recognition or quick operation according to the holding signal collected by the pressure sensor 1012. When the pressure sensor 1012 is disposed on the lower layer of the display screen 1005, the processor 1001 can control the operable controls on the UI interface according to the pressure operation of the user on the display screen 1005. The operable controls include at least one of a button control, a scroll bar control, an icon control, and a menu control.

[0152] The optical sensor 1013 is used to collect the ambient light intensity. In one embodiment, the processor 1001 can control the display brightness of the display screen 1005 according to the ambient light intensity collected by the optical sensor 1013. Specifically, when the ambient light intensity is high, the display brightness of the display screen 1005 is increased; when the ambient light intensity is low, the display brightness of the display screen 1005 is decreased. In another embodiment, the processor 1001 can also dynamically adjust the shooting parameters of the camera module 1006 according to the ambient light intensity collected by the optical sensor 1013.

[0153] The proximity sensor 1014, also known as the distance sensor, is usually disposed on the front panel of the terminal. The proximity sensor 1014 is used to collect the distance between the user and the front of the terminal. In one embodiment, when the proximity sensor 1014 detects that the distance between the user and the front of the terminal is gradually decreasing, the processor 1001 controls the display screen 1005 to switch from the lit state to the off state; when the proximity sensor 1014 detects that the distance between the user and the front of the terminal is gradually increasing, the processor 1001 controls the display screen 1005 to switch from the off state to the lit state.

[0154] Those skilled in the art can understand that Figure 10 the structure shown in does not constitute a limitation on the focal length detection device, and may include more or fewer components than shown, or combine certain components, or adopt different component arrangements.

[0155] In an exemplary embodiment, a computer device is further provided. The computer device includes a processor and a memory, and at least one computer program is stored in the memory. The at least one computer program is loaded and executed by one or more processors so that the computer device implements any one of the above-mentioned focal length detection methods of the lithography apparatus.

[0156] In an exemplary embodiment, a computer-readable storage medium is further provided. At least one computer program is stored in the computer-readable storage medium and is loaded and executed by a processor of a computer device so that the computer implements any one of the above-mentioned focal length detection methods of the lithography apparatus.

[0157] In a possible implementation manner, the above-mentioned computer-readable storage medium may be a read-only memory (ROM), a random access memory (RAM), a compact disc read-only memory (CD-ROM), magnetic tape, a floppy disk, an optical data storage device, and the like.

[0158] In an exemplary embodiment, a computer program product or a computer program is further provided. The computer program product or the computer program includes computer instructions, and the computer instructions are stored in a computer-readable storage medium. A processor of a computer device reads the computer instructions from the computer-readable storage medium, and the processor executes the computer instructions so that the computer device executes any one of the above-mentioned focal length detection methods of the lithography apparatus.

[0159] It should be noted that the information (including but not limited to user device information, user personal information, etc.), data (including but not limited to data for analysis, stored data, displayed data, etc.), and signals involved in this application are all authorized by the user or fully authorized by all parties, and the collection, use, and processing of relevant data need to comply with the relevant laws, regulations, and standards of relevant countries and regions. For example, the first images involved in this application are all obtained under full authorization.

[0160] It should be understood that the term "a plurality" mentioned herein refers to two or more. "And / or" describes the association relationship of associated objects and indicates that three relationships may exist. For example, A and / or B may represent: A exists alone, A and B exist simultaneously, and B exists alone. The character " / " generally represents an "or" relationship between the associated objects before and after.

[0161] The above are only exemplary embodiments of the present application and are not intended to limit the present application. Any modifications, equivalent replacements, improvements, etc. made within the principle of the present application shall be included in the protection scope of the present application.

Claims

1. A method for detecting the focal length of a lithography apparatus, characterized in that The method includes: Obtaining a reference layout and an incident light source, where the incident light source is a unilateral light source and has an inclination angle, and the inclination angle is used to generate a position offset during the lithography process; Using the reference layout and the incident light source, performing lithography on the material to be lithographed through a target lithography device to be measured, and obtaining a plurality of first images with position offsets; Measuring the first offset amount corresponding to each first image, where the first offset amount corresponding to any one of the first images indicates the offset amount of the any one of the first images relative to the previous layer image of the any one of the first images, and the previous layer image is an image generated before the any one of the first images during the process of lithographing the any one of the first images; Determining the focal length detection result of the target lithography device according to the first offset amounts corresponding to the respective first images and a plurality of second offset amounts corresponding to a reference lithography device, where the lithography quality of the reference lithography device is not lower than that of the target lithography device.

2. The method according to claim 1, wherein The step of using the reference layout and the incident light source to perform lithography on the material to be lithographed through the target lithography device to be measured and obtaining a plurality of first images with position offsets includes: Irradiating the reference layout with the incident light source, and through the target lithography device, irradiating the light passing through the reference layout onto the material to be lithographed according to a plurality of first defocus amounts, and performing lithography on the irradiated material to obtain a plurality of first images with position offsets.

3. The method according to claim 2, wherein Before irradiating the light passing through the reference layout onto the material to be lithographed according to a plurality of first defocus amounts through the target lithography device and performing lithography on the irradiated material, it further includes: Selecting all or part of the second defocus amounts used in the lithography of the reference lithography device, and using the selected second defocus amounts as the first defocus amounts.

4. The method according to claim 1, wherein The step of measuring the first offset amount corresponding to each first image includes: For any one of the first images, determining the first image center of the any one of the first images and the second image center of the previous layer image of the any one of the first images; Determining the center offset amount between the first image center and the second image center as the first offset amount corresponding to the any one of the first images.

5. The method according to any one of claims 1-4, characterized in that, Before determining the focal length detection result of the target lithography device according to the first offset amounts corresponding to the respective first images and a plurality of second offset amounts corresponding to a reference lithography device, it further includes: Using the reference layout and the incident light source, performing lithography on the material to be lithographed through the reference lithography device, and obtaining a plurality of second images with position offsets; Measuring the second offset amount corresponding to each second image, where the second offset amount corresponding to any one of the second images indicates the offset amount of the any one of the second images relative to the previous layer image of the any one of the second images, and the previous layer image is an image generated before the any one of the second images during the process of lithographing the any one of the second images; Taking the measured plurality of second offset amounts as the plurality of second offset amounts corresponding to the reference lithography device.

6. The method according to any one of claims 1-4, characterized in that, The reference lithography device includes a simulation lithography device; Before determining the focal length detection result of the target lithography device based on the first offsets corresponding to the respective first images and the multiple second offsets corresponding to the reference lithography device, the method further includes: Simulating a simulation result of lithography formed by using the reference layout and the incident light source according to the layout parameters of the reference layout and the light source parameters of the incident light source; Determining multiple second offsets corresponding to the simulation lithography device according to the simulation result; 7. The method according to any one of claims 1-4, characterized in that, The focal length detection result includes a focal length offset amount, and the focal length offset amount indicates the amount of focal length that needs to be supplemented before lithography using the target lithography device; Determining the focal length detection result of the target lithography device according to the first offsets corresponding to the respective first images and the multiple second offsets corresponding to the reference lithography device includes: Determining a first reference relationship between each second offset and a second defocus amount corresponding to each second offset, where the first reference relationship indicates the process quality of the reference lithography device; Determining a second reference relationship between each first offset and a first defocus amount corresponding to each first offset, where the second reference relationship indicates the process quality of the target lithography device; Determining the focal length offset amount of the target lithography device according to the first reference relationship and the second reference relationship; 8. The method according to claim 7, characterized in that The first reference relationship includes a linear relationship; 9. The method according to any one of claims 1-4, characterized in that The reference layout includes a grating structure layout; 10. A focal length detection device for a lithography apparatus, characterized in that, The device includes: An acquisition module, configured to acquire a reference layout and an incident light source, where the incident light source is a single-sided light source and has an inclination angle, and the inclination angle is used to generate a position offset during the lithography process; The acquisition module is further configured to use the reference layout and the incident light source to perform lithography on a material to be lithographed through a target lithography device to be measured, and obtain a plurality of first images with position offsets; A determination module, configured to measure a first offset corresponding to each first image, where the first offset corresponding to any one of the first images indicates the offset of the any one of the first images relative to the previous-layer image of the any one of the first images, and the previous-layer image is an image generated before the any one of the first images during the process of lithographing the any one of the first images; The determination module is further configured to determine the focal length detection result of the target lithography device according to the first offsets corresponding to the respective first images and the multiple second offsets corresponding to the reference lithography device, and the lithography quality of the reference lithography device is not lower than that of the target lithography device; 11. A computer device, characterized in that, The computer device includes a processor and a memory, and at least one computer program is stored in the memory, and the at least one computer program is loaded and executed by the processor to enable the computer device to implement the focal length detection method of the lithography device according to any one of claims 1 to 9; 12. A computer-readable storage medium, characterized in that, At least one computer program is stored in the computer-readable storage medium, and the at least one computer program is loaded and executed by a processor to enable a computer to implement the focal length detection method of the lithography device according to any one of claims 1 to 9.

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