Method and system for establishing aging model of semiconductor device, equipment and storage medium

Abstract

The invention discloses a method and a system for establishing an aging model of a semiconductor device, equipment and a storage medium. The establishing method comprises the following steps: acquiring life characterization data of the semiconductor device in a degradation saturation form; establishing an aging model according with a degradation saturation form according to the life characterization data; and outputting the aging model. According to the invention, a more efficient and reasonable aging model matched with the degradation saturation form of the semiconductor device is established, so that the establishment of the aging model is closer to practical application and is more suitable for real data simulation and simulation requirements.

Description

Technical Field

[0001] Embodiments of the present invention relate to the field of semiconductor manufacturing, and in particular, to a method, system, device, and storage medium for establishing an aging model of a semiconductor device. Background Art

[0002] The aging model of the in-vehicle platform is an important post-layout fitting tool. Adding it to the simulation model can help automotive electronic device manufacturers better understand the aging behavior of devices, which is beneficial for customers to conduct early circuit simulations to evaluate the reliability risks after moderate overvoltage, so as to better optimize circuit designs and improve the reliability and competitiveness of customer products.

[0003] Compared with conventional CMOS devices, currently emerging in-vehicle power management chips contain a large number of LDMOS devices. The degradation of the hot carrier effect (HCI) of LDMOS often shows a saturation situation, and the existing conventional HCI lifetime formula cannot measure this situation.

[0004] Currently, there is only an Aging model method for CMOS devices in the domestic industry, and there is no Aging model method applicable to LDMOS devices in power management chips. Summary of the Invention

[0005] The problem solved by the embodiments of the present invention is to provide a method, system, device, and storage medium for establishing an aging model of a semiconductor device, so that the establishment of the aging model is closer to actual applications and more suitable for real data simulation and simulation requirements.

[0006] To solve the above problems, embodiments of the present invention provide a method for detecting image feature points, including: obtaining lifetime characterization data of a semiconductor device in a degraded saturation state; establishing an aging model that conforms to the degraded saturation state according to the lifetime characterization data; and outputting the aging model.

[0007] Optionally, establishing an aging model that conforms to the degraded saturation state according to the lifetime characterization data includes: establishing an aging model that conforms to the degraded saturation state according to the saturation value of the lifetime characterization data.

[0008] Optionally, obtaining lifetime characterization data of a semiconductor device in a degraded saturation state includes: obtaining lifetime characterization data of the semiconductor device changing with time under different voltage conditions; establishing an aging model that conforms to the degraded saturation state according to the saturation value of the lifetime characterization data includes: obtaining the maximum value of the lifetime characterization data of the semiconductor device under different voltage conditions as the saturation value; and establishing an aging model that conforms to the degraded saturation state according to multiple voltage conditions and the saturation values corresponding to the multiple voltage conditions.

[0009] Optionally, an aging model conforming to the degradation saturation form is established according to multiple voltage conditions and the saturation values corresponding to the multiple voltage conditions, including: obtaining a voltage acceleration factor according to the multiple voltage conditions; after setting the voltage acceleration factor, fitting the multiple voltage conditions and the saturation values corresponding to the voltage conditions to obtain a fitting coefficient, and establishing an aging model conforming to the degradation saturation form.

[0010] Optionally, use the formula to fit the multiple voltage conditions and the saturation values corresponding to the voltage conditions, where ΔI d % is the saturation value, A is the fitting coefficient, B is the voltage acceleration factor, and V d is the voltage.

[0011] Optionally, an aging model conforming to the degradation saturation form is established according to the life characterization data, including: establishing an aging model conforming to the degradation saturation form according to multiple data from the initial value to the saturation value in the life characterization data.

[0012] Optionally, obtain the life characterization data of the semiconductor device in the degradation saturation form, including: obtaining the life characterization data of the semiconductor device changing with time under different voltage conditions; according to multiple data from the initial value to the saturation value in the life characterization data, establishing an aging model conforming to the degradation saturation form, including: obtaining the data within the time period from the initial time to the maximum value of the life characterization data of the semiconductor device under different voltage conditions as the test data; establishing an aging model conforming to the degradation saturation form according to the multiple voltage conditions and the test data corresponding to the multiple voltage conditions.

[0013] Optionally, an aging model conforming to the degradation saturation form is established according to the multiple voltage conditions and the test data corresponding to the multiple voltage conditions, including: fitting the multiple test data and the time corresponding to the test data under each voltage condition to establish an aging model conforming to the degradation saturation form.

[0014] Optionally, under each voltage condition, fitting the multiple test data and the time corresponding to the test data to establish an aging model conforming to the degradation saturation form, including: obtaining a set of acceleration factors; setting a saturation term for the set of acceleration factors; using the set of acceleration factors and the saturation term to fit the multiple test data and the time corresponding to the test data to obtain a fitting coefficient, and establishing an aging model conforming to the degradation saturation form.

[0015] Optionally, use the formula to fit the multiple test data and the time corresponding to the test data, where ΔI d % is the test data, ε is the set of acceleration factors, is the saturation term, t is the time, and C1, C2, and n are the fitting coefficients.

[0016] Optionally, the planning solution method is adopted to fit multiple test data and the corresponding time of the test data.

[0017] Optionally, the life characterization data of the semiconductor device in the degradation saturation state is obtained, including: setting the establishment criteria for the aging model that conforms to the degradation saturation state; formulating a life detection plan for the semiconductor device according to the establishment criteria; performing a life detection on the semiconductor device according to the life detection plan to obtain the life characterization data of the semiconductor device in the degradation saturation state.

[0018] Optionally, when formulating the life detection plan for the semiconductor device according to the establishment criteria, during the life detection, it is set that when the maximum value of the life characterization data appears, the life detection is completed.

[0019] Optionally, before outputting the aging model, the establishment method further includes: performing an acceptance review on the aging model; when the acceptance review passes, outputting the aging model.

[0020] Optionally, in obtaining the life characterization data of the semiconductor device in the degradation saturation state, the life characterization data is the current degradation amount.

[0021] Correspondingly, an embodiment of the present invention further provides a system for establishing an aging model of a semiconductor device, including: a life characterization data acquisition module, configured to acquire the life characterization data of the semiconductor device in the degradation saturation state; an aging model establishment module, configured to establish an aging model that conforms to the degradation saturation state according to the life characterization data; and an aging model output module, configured to output the aging model.

[0022] Correspondingly, an embodiment of the present invention further provides a device, including at least one memory and at least one processor, where the memory stores one or more computer instructions, and one or more computer instructions are executed by the processor to implement the method for establishing an aging model of a semiconductor device provided by the embodiment of the present invention.

[0023] Correspondingly, an embodiment of the present invention further provides a storage medium, where the storage medium stores one or more computer instructions, and the one or more computer instructions are used to implement the method for establishing an aging model of a semiconductor device provided by the embodiment of the present invention.

[0024] Compared with the prior art, the technical solution of the embodiment of the present invention has the following advantages:

[0025] In the method for establishing an aging model provided by the embodiments of the present invention, lifespan characterization data of semiconductor devices in the degradation saturation state is obtained, an aging model conforming to the degradation saturation state is established based on the lifespan characterization data, and the aging model is output; in the embodiments of the present invention, for the case where semiconductor devices in a vehicle-mounted platform include LDMOS devices, the LDMOS devices have the hot carrier effect (HCI), and the degradation of the corresponding semiconductor devices will show a saturation situation. This embodiment establishes an aging model conforming to the degradation saturation state for semiconductor devices presenting the degradation saturation state, and establishes a more efficient and reasonable aging model matching the degradation saturation state of semiconductor devices, making the establishment of the aging model closer to actual applications and more suitable for real data simulation and emulation requirements. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 is a schematic diagram corresponding to a method for establishing an aging model of a semiconductor device;

[0027] Figure 2 is a flowchart of an embodiment of the method for establishing an aging model of a semiconductor device according to the present invention;

[0028] Figure 3 is a schematic diagram corresponding to an embodiment of the method for establishing an aging model of a semiconductor device according to the present invention;

[0029] Figure 4 is a flowchart of another embodiment of the method for establishing an aging model of a semiconductor device according to the present invention;

[0030] Figure 5 is a schematic diagram corresponding to another embodiment of the method for establishing an aging model of a semiconductor device according to the present invention;

[0031] Figure 6 is a functional block diagram of an embodiment of the system for establishing an aging model of a semiconductor device according to the present invention;

[0032] Figure 7 is a hardware structure diagram of an embodiment of the device provided by the present invention. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0033] As can be seen from the background art, the aging model in a vehicle-mounted platform is an important post-simulation fitting tool. Adding it to the simulation model can help automotive electronic device manufacturers better understand the aging behavior of devices, which is beneficial for customers to conduct early circuit simulations to evaluate the reliability risk after moderate overvoltage, so as to better optimize circuit designs and improve the reliability and competitiveness of customer products.

[0034] At present, there is only an Aging model method for CMOS devices of automotive electronic devices in the domestic industry, such as Figure 1 shown.Figure 1 A dot plot showing the current degradation amount versus time is presented. The current aging model is only applicable to CMOS devices where the current degradation amount continuously increases with time. However, for emerging in-vehicle power management chips currently, a large number of LDMOS devices are included, and the degradation of the hot carrier effect (HCI) of LDMOS often shows a saturation situation, and the current Aging model method cannot measure this situation.

[0035] To solve the technical problem, an embodiment of the present invention provides a method for establishing an aging model of a semiconductor device. Refer to Figure 1 , which shows a flowchart of an embodiment of the method for establishing an aging model of a semiconductor device according to the present invention.

[0036] In this embodiment, the method for establishing an aging model of a semiconductor device includes the following basic steps:

[0037] Step S1: Obtain the life characterization data of the semiconductor device in the degradation saturation state;

[0038] Step S2: Establish an aging model that conforms to the degradation saturation state according to the life characterization data;

[0039] Step S3: Output the aging model.

[0040] In the embodiment of the present invention, for the case where the semiconductor device in the in-vehicle platform includes LDMOS devices, the LDMOS devices have the hot carrier effect (HCI), and the degradation of the corresponding semiconductor device will show a saturation situation. This embodiment establishes an aging model that conforms to the degradation saturation state for the semiconductor device presenting the degradation saturation state, and establishes a more efficient and reasonable aging model that matches the degradation saturation state of the semiconductor device, making the establishment of the aging model closer to the actual application and more suitable for the real data simulation and simulation requirements.

[0041] To make the above objects, features, and advantages of the embodiments of the present invention more obvious and understandable, the following will describe the specific embodiments of the present invention in detail with reference to the accompanying drawings.

[0042] Figure 2 is a corresponding schematic diagram in an embodiment of the method for establishing an aging model of a semiconductor device according to the present invention.

[0043] It should be noted that in this embodiment, an example is given of establishing an aging model for semiconductor devices on a vehicle-mounted platform. For the case where semiconductor devices in the vehicle-mounted platform include LDMOS devices, the LDMOS devices have the hot carrier effect (HCI), and the degradation of the corresponding semiconductor devices will show a saturation situation, that is, during the aging process of the semiconductor devices, the aging degree of the semiconductor devices will tend to saturate due to the hot carrier effect. In other embodiments, the aging model of the semiconductor devices can also be applied to semiconductor devices with a degradation saturation form on other platforms.

[0044] Execute step S1: Obtain the life characterization data of the semiconductor device in the degradation saturation form.

[0045] Obtain the life characterization data of the semiconductor device in the degradation saturation form for establishing an aging model based on the life characterization data subsequently.

[0046] In this embodiment, among the life characterization data obtained for the semiconductor device in the degradation saturation form, the life characterization data is the current degradation amount.

[0047] The current degradation amount can characterize the degradation degree of the semiconductor device. The larger the current degradation amount, the greater the degradation degree of the semiconductor device is characterized.

[0048] In this embodiment, obtaining the life characterization data of the semiconductor device in the degradation saturation form includes: obtaining the life characterization data of the semiconductor device changing with time under different voltage conditions.

[0049] Obtain the life characterization data of the semiconductor device changing with time under different voltage conditions for subsequently fitting the time and life characterization data of the semiconductor device under different voltage conditions to establish an aging model that conforms to the degradation saturation form.

[0050] In this embodiment, obtaining the life characterization data of the semiconductor device in the degradation saturation form includes: setting the establishment criteria for an aging model that conforms to the degradation saturation form.

[0051] Set the establishment criteria for an aging model that conforms to the degradation saturation form as the basis for formulating the life detection scheme of the semiconductor device subsequently.

[0052] In this embodiment, formulate the life detection scheme of the semiconductor device according to the establishment criteria.

[0053] The life detection scheme is used as the criterion for performing life detection.

[0054] In this embodiment, in the life detection scheme of the semiconductor device formulated according to the establishment criteria, when performing life detection, it is set that when the maximum value of the life characterization data appears, the life detection is completed.

[0055] In this embodiment, the semiconductor device has a degraded saturation form. Therefore, when the maximum value of the lifetime characterization data appears, which indicates that the degradation degree of the semiconductor device tends to saturation, it is set that the lifetime detection is completed at this time.

[0056] In this embodiment, setting the completion of the lifetime detection when the maximum value of the lifetime characterization data appears is beneficial to improving the lifetime detection efficiency and simplifying the lifetime detection process.

[0057] In this embodiment, when formulating the lifetime detection scheme of the semiconductor device according to the established criteria, when there are other differences in the device, but the GOX and IMP are the same, a common acceleration factor can be used, and the smaller value of the two is selected as the acceleration factor to simplify the detection process and improve the detection efficiency.

[0058] In this embodiment, when formulating the lifetime detection scheme of the semiconductor device according to the established criteria, for semiconductor devices with the same structure, the channel length and channel width are only detected once during the lifetime detection, which is beneficial to simplifying the lifetime detection process and improving the lifetime detection efficiency.

[0059] In this embodiment, when formulating the lifetime detection scheme of the semiconductor device according to the established criteria, the RRA (Reverse Analysis) method is used for lifetime prediction to obtain the predicted lifetime in advance as a reference for subsequent lifetime detection.

[0060] Correspondingly, in this embodiment, the semiconductor device is subjected to lifetime detection according to the lifetime detection scheme to obtain the lifetime characterization data of the semiconductor device in the degraded saturation form.

[0061] Execute step S2: Establish an aging model that conforms to the degraded saturation form according to the lifetime characterization data.

[0062] In this embodiment, for the case where the semiconductor device includes an LDMOS device in the vehicle-mounted platform, the LDMOS device has a hot carrier effect (HCI), and the degradation of the corresponding semiconductor device will show a saturation situation. In this embodiment, an aging model that conforms to the degraded saturation form is established for the semiconductor device presenting the degraded saturation form, and a more efficient and reasonable aging model that matches the degraded saturation form of the semiconductor device is established, making the establishment of the aging model closer to the actual application and more suitable for the real data simulation and simulation requirements.

[0063] In this embodiment, establishing an aging model that conforms to the degraded saturation form according to the lifetime characterization data includes: executing step S21: Establish an aging model that conforms to the degraded saturation form according to the saturation value of the lifetime characterization data.

[0064] The saturation value of the lifetime characterization data, which is the peak value representing the degradation degree of the semiconductor device, is used to establish an aging model that conforms to the degradation saturation pattern. After obtaining the aging model, the lifetime saturation value of the semiconductor device can be obtained through the aging model to characterize the lifetime of the semiconductor device.

[0065] In this embodiment, establishing an aging model that conforms to the degradation saturation pattern based on the saturation value of the lifetime characterization data includes: obtaining the maximum value of the lifetime characterization data of the semiconductor device under different voltage conditions as the saturation value.

[0066] Obtaining the maximum value of the lifetime characterization data of the semiconductor device under different voltage conditions as the saturation value, which is subsequently used to obtain the aging model by fitting the voltage conditions and the saturation value.

[0067] As an example, as Figure 3 shown, Figure 3 is a dot plot of the time-current degradation amount under different voltage conditions obtained by detecting the lifetime of the semiconductor device in this embodiment. Among them, Vd1, Vd2, and Vd3 are three different voltage conditions, and ΔI d1 %, ΔI d2 %, and ΔI d3 % are the saturation values of the semiconductor device corresponding to Vd1, Vd2, and Vd3.

[0068] In this embodiment, an aging model that conforms to the degradation saturation pattern is established based on multiple voltage conditions and the saturation values corresponding to the multiple voltage conditions.

[0069] In this embodiment, the aging model established based on multiple voltage conditions and the saturation values corresponding to the multiple voltage conditions enables the semiconductor device to use this aging model to obtain the corresponding saturation values under different voltage conditions to characterize the lifetime of the semiconductor device.

[0070] In this embodiment, establishing an aging model that conforms to the degradation saturation pattern based on multiple voltage conditions and the saturation values corresponding to the multiple voltage conditions includes: obtaining a voltage acceleration factor according to the multiple voltage conditions.

[0071] Specifically, in this embodiment, a voltage acceleration factor is obtained according to the three different voltage conditions Vd1, Vd2, and Vd3.

[0072] In this embodiment, after setting the voltage acceleration factor, the multiple voltage conditions and the saturation values corresponding to the voltage conditions are fitted to obtain a fitting coefficient, and an aging model that conforms to the degradation saturation pattern is established.

[0073] As an example, as Figure 3 shown, for different voltage conditions Vd1, Vd2, and Vd3, the fitting is Figure 3 which respectively passes through ΔId1 %, ΔI d2 % and ΔI d3 Horizontal line at the % point.

[0074] Specifically, in this embodiment, the formula is used to fit multiple said voltage conditions and the saturation values corresponding to the voltage conditions, where ΔI d % is the saturation value, A is the fitting coefficient, B is the voltage acceleration factor, and V d is the voltage.

[0075] Correspondingly, in this embodiment, after obtaining the fitting coefficient A and the voltage acceleration factor B, an aging model is obtained. Subsequently, using this aging model, the saturation value ΔI d corresponding to different voltages V d % of the semiconductor device can be obtained, which is the life value of the semiconductor device.

[0076] In this embodiment, before outputting the aging model, the establishment method further includes: performing an acceptance review on the aging model; when the acceptance review passes, outputting the aging model.

[0077] Performing an acceptance review on the aging model enables further confirmation of whether the aging model meets the requirements before subsequent output.

[0078] Correspondingly, when the acceptance review passes, step S3 is executed: outputting the aging model.

[0079] When the acceptance review fails, return to execute step S2.

[0080] Figure 4 is the flowchart of another embodiment of the method for establishing the aging model of the semiconductor device of the present invention, Figure 5 is the schematic diagram corresponding to another embodiment of the method for establishing the aging model of the semiconductor device of the present invention.

[0081] The same parts of this embodiment and the foregoing embodiments will not be described herein again. The differences between this embodiment and the foregoing embodiments are as follows: An aging model conforming to the degradation saturation form is established based on multiple data of the life characterization data from the initial value to the saturation value.

[0082] In this embodiment, establishing an aging model conforming to the degradation saturation form based on the life characterization data includes: executing step S22: establishing an aging model conforming to the degradation saturation form based on multiple data of the life characterization data from the initial value to the saturation value.

[0083] Among them, multiple data of the life characterization data from the initial value to the saturation value refer to multiple life characterization data from the initial value in the life detection to the saturation value reaching degradation saturation.

[0084] In this embodiment, an aging model is established based on multiple data from the initial value to the saturation value of the lifetime characterization data. Subsequently, the aging model can be used to obtain the lifetime characterization data corresponding to different times of the semiconductor device.

[0085] In this embodiment, an aging model conforming to the degradation saturation form is established according to multiple data of the lifetime characterization data from the initial value to the saturation value, including: obtaining, under different voltage conditions, the data of the semiconductor device during the period from the initial time to the maximum value of the lifetime characterization data as the test data.

[0086] Obtain the test data for subsequently establishing an aging model conforming to the degradation saturation form based on the test data.

[0087] As an example, as Figure 5 shown, Figure 5 is a dot plot of the time-current degradation amount under different voltage conditions obtained by detecting the lifetime of the semiconductor device in this embodiment. Among them, Vd1, Vd2, and Vd3 are three different voltage conditions, and the current degradation amount from the initial time to the time when the semiconductor device tends to degrade and saturate is obtained as the test data.

[0088] In this embodiment, an aging model conforming to the degradation saturation form is established according to multiple voltage conditions and the test data corresponding to the multiple voltage conditions.

[0089] In this embodiment, the aging model established according to multiple voltage conditions and the test data corresponding to the multiple voltage conditions enables the semiconductor device to use the aging model to obtain the change trend of the time-lifetime characterization value under different voltage conditions to characterize the lifetime of the semiconductor device.

[0090] In this embodiment, an aging model conforming to the degradation saturation form is established according to multiple voltage conditions and the test data corresponding to the multiple voltage conditions, including: fitting multiple test data and the time corresponding to the test data under each voltage condition to establish an aging model conforming to the degradation saturation form.

[0091] By fitting multiple test data and the time corresponding to the test data, an aging model simulating the trend of the time-lifetime characterization data can be obtained.

[0092] In this embodiment, under each voltage condition, fitting multiple test data and the time corresponding to the test data to establish an aging model conforming to the degradation saturation form, including: obtaining the acceleration factor set.

[0093] Specifically, in this embodiment, the acceleration factor set ε is obtained using the formula where L is the channel length, α1 is the channel length acceleration factor, W is the channel width, α2 is the channel width acceleration factor, and K Bis the Boltzmann constant, and E α is the temperature acceleration factor, T is the temperature, and V d is the drain voltage, B is the drain voltage acceleration factor, and V b is the substrate voltage, γ is the substrate voltage acceleration factor, and V g is the gate voltage, and N is the gate voltage acceleration factor.

[0094] In this embodiment, a saturation term is set for the set of acceleration factors.

[0095] Setting a saturation term for the set of acceleration factors enables fitting of time-lifetime characterization data with a saturating shape.

[0096] In this embodiment, using the set of acceleration factors and the fitting term, multiple test data and the corresponding times are fitted to obtain fitting coefficients and establish an aging model that conforms to the degradation saturation pattern.

[0097] As an example, as Figure 5 shown, for different voltage conditions Vd1, Vd2, and Vd3, the fitting is for Figure 5 the curves of Vd1_cal, Vd2_cal, and Vd3_cal in

[0098] In this embodiment, using the formula multiple test data and the corresponding times are fitted, where ΔI d % is the test data, ε is the set of acceleration factors, is the saturation term, t is the time (lifetime), and C1, C2, and n are the fitting coefficients.

[0099] As an example, in this embodiment, the obtained aging model is where Subsequently, using this aging model, the lifetime characterization data ΔI corresponding to different times t under different voltages V d can be obtained. According to the lifetime characterization data ΔI d %, the corresponding time t of the semiconductor device is the lifetime. d %

[0100] In this embodiment, the method of solving by optimization is used to fit multiple test data and the corresponding times.

[0101] Using the method of solving by optimization for fitting has a relatively high fitting efficiency and wide applicability.

[0102] In other embodiments, other fitting methods can also be used to fit multiple test data and the corresponding times.

[0103] Correspondingly, the present invention further provides a system for establishing an aging model of a semiconductor device. Figure 6 It is a functional block diagram of an embodiment of the system for establishing an aging model of a semiconductor device according to the present invention.

[0104] In this embodiment, the system 50 for establishing an aging model of a semiconductor device includes: a life characterization data acquisition module 501, configured to acquire life characterization data of the semiconductor device in a degradation saturation state; an aging model establishment module 502, configured to establish an aging model conforming to the degradation saturation state according to the life characterization data; and an aging model output module 503, configured to output the aging model.

[0105] The life characterization data acquisition module 501 is configured to acquire life characterization data of the semiconductor device in a degradation saturation state.

[0106] Acquiring the life characterization data of the semiconductor device in a degradation saturation state is used to subsequently establish an aging model according to the life characterization data.

[0107] In this embodiment, among the life characterization data of the semiconductor device acquired in a degradation saturation state, the life characterization data is the current degradation amount.

[0108] The current degradation amount can characterize the degradation degree of the semiconductor device. The larger the current degradation amount, the greater the degradation degree of the semiconductor device is characterized.

[0109] In this embodiment, acquiring the life characterization data of the semiconductor device in a degradation saturation state includes: acquiring the life characterization data of the semiconductor device changing with time under different voltage conditions.

[0110] Acquiring the life characterization data of the semiconductor device changing with time under different voltage conditions is used to subsequently fit the time and life characterization data of the semiconductor device under different voltage conditions to establish an aging model conforming to the degradation saturation state.

[0111] In this embodiment, acquiring the life characterization data of the semiconductor device in a degradation saturation state includes: setting a criterion for establishing an aging model conforming to the degradation saturation state.

[0112] Setting a criterion for establishing an aging model conforming to the degradation saturation state serves as a basis for subsequently formulating a life detection scheme for the semiconductor device.

[0113] In this embodiment, a life detection scheme for the semiconductor device is formulated according to the established criterion.

[0114] The life detection scheme is used as a criterion for performing life detection.

[0115] In this embodiment, when formulating a life detection plan for semiconductor devices according to the established criteria, during life detection, when the maximum value of the life characterization data appears, the life detection is completed.

[0116] In this embodiment, the semiconductor device has a degradation saturation form. Therefore, when the maximum value of the life characterization data appears, it indicates that the degradation degree of the semiconductor device tends to be saturated, and it is set that the life detection is completed at this time.

[0117] In this embodiment, setting the completion of life detection when the maximum value of the life characterization data appears is beneficial to improving the life detection efficiency and simplifying the life detection process.

[0118] In this embodiment, when formulating a life detection plan for semiconductor devices according to the established criteria, when there are other differences in the devices but the GOX and IMP are the same, an acceleration factor can be shared, and the smaller value of the two is selected as the acceleration factor to simplify the detection process and improve the detection efficiency.

[0119] In this embodiment, when formulating a life detection plan for semiconductor devices according to the established criteria, for semiconductor devices with the same structure, during life detection, the channel length and channel width are only detected once, which is beneficial to simplifying the life detection process and improving the life detection efficiency.

[0120] In this embodiment, when formulating a life detection plan for semiconductor devices according to the established criteria, the RRA (Reverse Analysis) method is used for life prediction to obtain the predicted life in advance as a reference for subsequent life detection.

[0121] Correspondingly, in this embodiment, according to the life detection plan, the life detection of the semiconductor device is carried out to obtain the life characterization data of the semiconductor device in the degradation saturation form.

[0122] The aging model establishment module 502 is used to establish an aging model that conforms to the degradation saturation form according to the life characterization data.

[0123] In this embodiment, for the case where the semiconductor device includes an LDMOS device in the vehicle-mounted platform, the LDMOS device has a hot carrier effect (HCI), and the degradation of the corresponding semiconductor device will show a saturation situation. In this embodiment, an aging model that conforms to the degradation saturation form is established for the semiconductor device presenting the degradation saturation form, and a more efficient and reasonable aging model that matches the degradation saturation form of the semiconductor device is established, making the establishment of the aging model closer to the actual application and more suitable for the real data simulation and simulation requirements.

[0124] In this embodiment, an aging model conforming to the degradation saturation form is established according to the life characterization data, including: establishing an aging model conforming to the degradation saturation form according to the saturation value of the life characterization data.

[0125] The saturation value of the life characterization data is the peak value representing the degradation degree of the semiconductor device. Then, an aging model conforming to the degradation saturation form is established according to the saturation value of the life characterization data. After obtaining the aging model subsequently, the life saturation value of the semiconductor device can be obtained through the aging model to characterize the life of the semiconductor device.

[0126] In this embodiment, establishing an aging model conforming to the degradation saturation form according to the saturation value of the life characterization data includes: obtaining the maximum value of the life characterization data of the semiconductor device under different voltage conditions as the saturation value.

[0127] Obtaining the maximum value of the life characterization data of the semiconductor device under different voltage conditions as the saturation value, which is subsequently used to obtain the aging model by fitting the voltage conditions and the saturation value.

[0128] As an example, as Figure 3 shown, Figure 3 is a dot plot of the time-current degradation amount under different voltage conditions obtained by detecting the life of the semiconductor device in this embodiment. Among them, Vd1, Vd2, and Vd3 are three different voltage conditions, and ΔI d1 %, ΔI d2 %, and ΔI d3 % are the saturation values of the semiconductor device corresponding to Vd1, Vd2, and Vd3.

[0129] In this embodiment, an aging model conforming to the degradation saturation form is established according to multiple voltage conditions and the saturation values corresponding to the multiple voltage conditions.

[0130] In this embodiment, the aging model established according to multiple voltage conditions and the saturation values corresponding to the multiple voltage conditions enables the semiconductor device to use this aging model to obtain the corresponding saturation values under different voltage conditions to characterize the life of the semiconductor device.

[0131] In this embodiment, establishing an aging model conforming to the degradation saturation form according to multiple voltage conditions and the saturation values corresponding to the multiple voltage conditions includes: obtaining a voltage acceleration factor according to the multiple voltage conditions.

[0132] Specifically, in this embodiment, the voltage acceleration factor is obtained according to three different voltage conditions of Vd1, Vd2, and Vd3.

[0133] In this embodiment, after setting the voltage acceleration factor, the multiple voltage conditions and the saturation values corresponding to the voltage conditions are fitted to obtain a fitting coefficient, and an aging model conforming to the degradation saturation form is established.

[0134] As an example, as Figure 3 shown, for different voltage conditions Vd1, Vd2, and Vd3, the fitting is Figure 3 the horizontal lines passing through ΔI d1 %, ΔI d2 %, and ΔI d3 % points in respectively.

[0135] Specifically, in this embodiment, using the formula to fit multiple said voltage conditions and the saturation values corresponding to the voltage conditions, where ΔI d % is the saturation value, A is the fitting coefficient, B is the voltage acceleration factor, and V d is the voltage.

[0136] Correspondingly, in this embodiment, after obtaining the fitting coefficient A and the voltage acceleration factor B, an aging model is obtained. Subsequently, using this aging model, the saturation value ΔI d corresponding to the semiconductor device under different voltages V d % can be obtained, which is the life value of the semiconductor device.

[0137] In this embodiment, before outputting the aging model, the establishment method further includes: performing an acceptance review on the aging model; when the acceptance review passes, outputting the aging model.

[0138] Performing an acceptance review on the aging model enables further confirmation of whether the aging model meets the requirements before subsequent output.

[0139] Correspondingly, when the acceptance review passes, the aging model output module 503 is used to output the aging model.

[0140] When the acceptance review fails, return to the aging model establishment module 502.

[0141] The following is another embodiment of the establishment system of the aging model of the semiconductor device of the present invention.

[0142] The same parts of this embodiment and the foregoing embodiment will not be described herein again. The differences between this embodiment and the foregoing embodiment are: establishing an aging model conforming to the degradation saturation form according to multiple data of the life characterization data from the initial value to the saturation value.

[0143] In this embodiment, establishing an aging model conforming to the degradation saturation form according to the life characterization data includes: establishing an aging model conforming to the degradation saturation form according to multiple data of the life characterization data from the initial value to the saturation value.

[0144] Among them, the life characterization data are multiple data from the initial value to the saturation value, which refers to multiple life characterization data from the initial value in the life detection to the saturation value when degradation saturation is reached.

[0145] In this embodiment, an aging model established based on multiple data of the life characterization data from the initial value to the saturation value can be used to obtain the life characterization data corresponding to the semiconductor device at different times subsequently.

[0146] In this embodiment, an aging model conforming to the degradation saturation form is established according to multiple data of the life characterization data from the initial value to the saturation value, including: obtaining data within the time period from the initial time to the maximum value of the life characterization data of the semiconductor device under different voltage conditions as test data.

[0147] Obtain test data for subsequently establishing an aging model conforming to the degradation saturation form based on the test data.

[0148] As an example, as Figure 5 shown, Figure 5 is a dot plot of time-current degradation amount under different voltage conditions obtained from the life detection of the semiconductor device in this embodiment. Among them, Vd1, Vd2, and Vd3 are three different voltage conditions, and the current degradation amount from the initial time to the time when the semiconductor device tends to degrade saturation is obtained as test data.

[0149] In this embodiment, an aging model conforming to the degradation saturation form is established according to multiple voltage conditions and the test data corresponding to the multiple voltage conditions.

[0150] In this embodiment, the aging model established according to multiple voltage conditions and the test data corresponding to the multiple voltage conditions enables the semiconductor device to use this aging model to obtain the change trend of the time-life characterization value under different voltage conditions to characterize the life of the semiconductor device.

[0151] In this embodiment, an aging model conforming to the degradation saturation form is established according to multiple voltage conditions and the test data corresponding to the multiple voltage conditions, including: fitting multiple test data and the time corresponding to the test data under each voltage condition to establish an aging model conforming to the degradation saturation form.

[0152] By fitting multiple test data and the time corresponding to the test data, an aging model simulating the trend of time-life characterization data can be obtained.

[0153] In this embodiment, under each voltage condition, fitting multiple test data and the time corresponding to the test data to establish an aging model conforming to the degradation saturation form includes: obtaining a set of acceleration factors.

[0154] Specifically, in this embodiment, the formula is used to obtain

[0155] the acceleration factor set ε, where L is the channel length, α1 is the channel length acceleration factor, W is the channel width, α2 is the channel width acceleration factor, K B is the Boltzmann constant, E α is the temperature acceleration factor, T is the temperature, V d is the drain voltage, B is the drain voltage acceleration factor, V b is the substrate voltage, γ is the substrate voltage acceleration factor, V g is the gate voltage, and N is the gate voltage acceleration factor.

[0156] In this embodiment, a saturation term is set for the acceleration factor set.

[0157] Setting a saturation term for the acceleration factor set realizes the fitting of the time-lifetime characterization data with a tendency to saturate.

[0158] In this embodiment, using the acceleration factor set and the fitting term, multiple test data and the time corresponding to the test data are fitted to obtain the fitting coefficients, and an aging model conforming to the degradation saturation form is established.

[0159] As an example, as Figure 5 shown, for different voltage conditions Vd1, Vd2, and Vd3, the fitting is for Figure 5 the curves of Vd1_cal, Vd2_cal, and Vd3_cal in.

[0160] In this embodiment, the formula is used to fit multiple test data and the time corresponding to the test data, where ΔI d % is the test data, ε is the acceleration factor set, is the saturation term, t is the time (lifetime), and C1, C2, and n are the fitting coefficients.

[0161] As an example, in this embodiment, the obtained aging model is where Subsequently, using this aging model, the lifetime characterization data ΔI d corresponding to different times t under different voltage V d conditions can be obtained. According to the lifetime characterization data ΔI d %, the time t corresponding to the semiconductor device is the lifetime.

[0162] In this embodiment, the multiple test data and the time corresponding to the test data are fitted by the method of solving optimization problems.

[0163] The fitting is performed by using the method of solving programming, with relatively high fitting efficiency and wide applicability.

[0164] In other embodiments, other fitting methods may also be used to fit multiple test data and the corresponding time of the test data.

[0165] The embodiment of the present invention further provides a device, which can implement the method for establishing the aging model of the semiconductor device provided by the embodiment of the present invention by loading the method for establishing the aging model of the above semiconductor device in the form of a program. An optional hardware structure of the terminal device provided by the embodiment of the present invention may be as Figure 7 shown, including: at least one processor 01, at least one communication interface 02, at least one memory 03, and at least one communication bus 04.

[0166] In this embodiment, the number of the processor 01, the communication interface 02, the memory 03, and the communication bus 04 is at least one, and the processor 01, the communication interface 02, and the memory 03 complete mutual communication through the communication bus 04. The communication interface 02 may be an interface of a communication module for network communication, such as an interface of a GSM module. The processor 01 may be a central processing unit CPU, or a specific integrated circuit (Application Specific Integrated Circuit, ASIC), or one or more integrated circuits configured to implement the embodiment of the present invention. The memory 03 may include a high-speed RAM memory, and may also include a non-volatile memory (non-volatile memory, NVM), such as at least one disk memory. Among them, the memory 03 stores one or more computer instructions, and the one or more computer instructions are executed by the processor 01 to implement the method for establishing the aging model of the semiconductor device provided by the embodiment of the present invention.

[0167] It should be noted that the above-mentioned implementation terminal device may further include other devices (not shown) that may not be necessary for the disclosure of the embodiment of the present invention; since these other devices may not be necessary for understanding the disclosure of the embodiment of the present invention, the embodiment of the present invention does not introduce them one by one.

[0168] The embodiment of the present invention further provides a storage medium, which stores one or more computer instructions for implementing the method for establishing the aging model of the semiconductor device provided by the embodiment of the present invention.

[0169] In the embodiments of the present invention, for the case where a semiconductor device includes an LDMOS device in a vehicle-mounted platform, the LDMOS device has a hot carrier effect (HCI), and the degradation of the corresponding semiconductor device will show a saturation situation. In this embodiment, an aging model that conforms to the degradation saturation form is established for the semiconductor device presenting the degradation saturation form, and a more efficient and reasonable aging model that matches the degradation saturation form of the semiconductor device is established, so that the establishment of the aging model is closer to the actual application and more suitable for the real data simulation and simulation requirements.

[0170] The above embodiments of the present invention are combinations of elements and features of the present invention. Unless otherwise mentioned, an element or feature can be considered optional. Each element or feature can be practiced without being combined with other elements or features. In addition, embodiments of the present invention can be constructed by combining some elements and / or features. The operation sequences described in the embodiments of the present invention can be rearranged. Some configurations of any embodiment can be included in another embodiment and can be replaced by the corresponding configuration of another embodiment. It is obvious to those skilled in the art that the claims that do not have an explicit citation relationship with each other in the appended claims can be combined into an embodiment of the present invention, or can be included as new claims in the amendments after the submission of this application.

[0171] Embodiments of the present invention can be implemented by various means such as hardware, firmware, software, or a combination thereof. In the hardware configuration mode, the method according to the exemplary embodiments of the present invention can be implemented by one or more application specific integrated circuits (ASICs), digital signal processors (DSPs), digital signal processing devices (DSPDs), programmable logic devices (PLDs), field programmable gate arrays (FPGAs), processors, controllers, microcontrollers, microprocessors, etc. In the firmware or software configuration mode, embodiments of the present invention can be implemented in the form of modules, processes, functions, etc. The software code can be stored in a memory unit and executed by a processor. The memory unit is located inside or outside the processor and can send data to the processor and receive data from the processor via various known means.

[0172] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present invention. Various modifications to these embodiments will be obvious to those skilled in the art, and the general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to these embodiments shown herein, but will conform to the widest scope consistent with the principles and novel features disclosed herein.

[0173] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the claims.

Claims

1. A method for establishing an aging model of a semiconductor device, characterized in that, Including: Obtaining the life characterization data of a semiconductor device in a degradation saturation state; Establishing an aging model conforming to the degradation saturation state according to the life characterization data; Outputting the aging model.

2. The method for establishing an aging model according to claim 1, wherein Establishing an aging model conforming to the degradation saturation state according to the life characterization data includes: establishing an aging model conforming to the degradation saturation state according to the saturation value of the life characterization data.

3. The method for establishing an aging model according to claim 2, characterized in that Obtaining the life characterization data of a semiconductor device in a degradation saturation state includes: obtaining the life characterization data of the semiconductor device changing with time under different voltage conditions; Establishing an aging model conforming to the degradation saturation state according to the saturation value of the life characterization data includes: obtaining the maximum value of the life characterization data of the semiconductor device under different voltage conditions as the saturation value; Establishing an aging model conforming to the degradation saturation state according to multiple voltage conditions and the saturation values corresponding to the multiple voltage conditions.

4. The method for establishing an aging model according to claim 3, wherein Establishing an aging model conforming to the degradation saturation state according to multiple voltage conditions and the saturation values corresponding to the multiple voltage conditions includes: obtaining a voltage acceleration factor according to the multiple voltage conditions; After setting the voltage acceleration factor, fitting the multiple voltage conditions and the saturation values corresponding to the voltage conditions to obtain a fitting coefficient, and establishing an aging model conforming to the degradation saturation state.

5. The method for establishing an aging model according to claim 4, wherein Using the formula to fit multiple said voltage conditions and the saturation values corresponding to the voltage conditions, where ΔI d % is the saturation value, A is the fitting coefficient, B is the voltage acceleration factor, and V d is the voltage.

6. The method for establishing an aging model according to claim 1, characterized in that, Establishing an aging model conforming to the degradation saturation state according to the life characterization data includes: establishing an aging model conforming to the degradation saturation state according to multiple data from the initial value to the saturation value of the life characterization data.

7. The method for establishing an aging model according to claim 6, characterized in that, Obtaining the life characterization data of a semiconductor device in a degradation saturation state includes: obtaining the life characterization data of the semiconductor device changing with time under different voltage conditions; Establishing an aging model conforming to the degradation saturation state according to multiple data from the initial value to the saturation value of the life characterization data includes: obtaining the data within the time period from the initial time to the maximum value of the life characterization data of the semiconductor device under different voltage conditions as test data; Establishing an aging model conforming to the degradation saturation state according to multiple voltage conditions and the test data corresponding to the multiple voltage conditions.

8. The method for establishing an aging model according to claim 7, characterized in that, Establishing an aging model conforming to the degradation saturation state according to multiple voltage conditions and the test data corresponding to the multiple voltage conditions includes: fitting the multiple test data and the time corresponding to the test data under each voltage condition to establish an aging model conforming to the degradation saturation state.

9. The method for establishing an aging model according to claim 8, wherein, Fitting the multiple test data and the time corresponding to the test data under each voltage condition to establish an aging model conforming to the degradation saturation state includes: obtaining a set of acceleration factors; Setting a saturation term for the set of acceleration factors; Using the set of acceleration factors and the saturation term to fit the multiple test data and the time corresponding to the test data to obtain a fitting coefficient, and establishing an aging model conforming to the degradation saturation state.

10. The method for establishing an aging model according to claim 9, characterized in that, Using the formula to fit multiple pieces of the test data and the time corresponding to the test data, where ΔI d % is the test data, ε is the set of acceleration factors, is the saturation term, t is the time, and C1, C2, and n are fitting coefficients.

11. The method for establishing an aging model according to claim 10, wherein Using the method of solving by planning to fit the multiple test data and the time corresponding to the test data.

12. The method for establishing an aging model according to claim 1, wherein, Obtain the life characterization data of the semiconductor device in the degradation saturation state, including: setting the establishment criteria for the aging model that conforms to the degradation saturation state; Formulate the life detection scheme of the semiconductor device according to the establishment criteria; Perform life detection on the semiconductor device according to the life detection scheme to obtain the life characterization data of the semiconductor device in the degradation saturation state.

13. The method for establishing an aging model according to claim 12, wherein When formulating the life detection scheme of the semiconductor device according to the establishment criteria, during the life detection, it is set that when the maximum value of the life characterization data appears, the life detection is completed.

14. The method for establishing an aging model according to claim 1, characterized in that, Before outputting the aging model, the establishment method further includes: conducting an acceptance review on the aging model; when the acceptance review passes, output the aging model.

15. The method for establishing an aging model according to claim 1, characterized in that, In obtaining the life characterization data of the semiconductor device in the degradation saturation state, the life characterization data is the current degradation amount.

16. A system for establishing an aging model of a semiconductor device, characterized in that, Including: A life characterization data acquisition module for obtaining the life characterization data of the semiconductor device in the degradation saturation state; An aging model establishment module for establishing an aging model that conforms to the degradation saturation state according to the life characterization data; An aging model output module for outputting the aging model.

17. A device, characterized in that, Including at least one memory and at least one processor, the memory stores one or more computer instructions, wherein the one or more computer instructions are executed by the processor to implement the method for establishing the aging model of the semiconductor device according to any one of claims 1-15.

18. A storage medium, characterized in that, The storage medium stores one or more computer instructions, and the one or more computer instructions are used to implement the method for establishing the aging model of the semiconductor device according to any one of claims 1-15.

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